Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method, capable of reducing a use amount of a processing liquid while removing an unnecessary film formed on one surface of a substrate without applying damages to the substrate.SOLUTION: A substrate processing apparatus 100 comprises: a nozzle 30 that discharges a processing liquid; a first liquid supply system 10 that includes a first pipe 12 connected to the nozzle 30, and supplies a first liquid to the nozzle 30 via the firs 12; a second liquid supply system 20 that includes a plurality of second sub-pipes 23, 24, and 25 that are respectively connected to a plurality of parts different from each other of a liquid channel formed by the nozzle 30 and the first pipe 12, and supplies a second liquid to the liquid path via any one of those sub-pipes; and a control part 6 that controls the first liquid supply system 10 and the second liquid supply system 20 on the basis of a plurality of operation conditions at a time of a processing of removing a film formed on the substrate W. The plurality of operation conditions are made to correspond to the plurality of parts of the substrate W, respectively.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for removing an unnecessary film formed on one surface of a substrate.

Background Art

[0002] A substrate processing apparatus is used to perform various processes on substrates such as semiconductor substrates, substrates for flat panel displays (FPDs) such as liquid crystal display devices or organic EL (Electro Luminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, or substrates for solar cells.

[0003] In the substrate processing apparatus described in Patent Document 1, an unnecessary resist film formed on one surface of a substrate (wafer) is removed using SPM (Sulfuric acid hydrogen peroxide mixture). More specifically, a substrate having a resist film is held in a horizontal posture by a spin chuck and rotated around a vertical axis. In this state, an SPM nozzle is disposed at a position above the rotating substrate, and SPM is supplied from the SPM nozzle toward the center of rotation of the substrate. SPM is a mixed solution of sulfuric acid (H2SO4) and hydrogen peroxide solution (H2O2) and has a strong oxidizing power. Thereby, the resist film on the substrate is peeled off from one surface of the substrate by the oxidizing power of SPM and removed.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] By the way, when SPM is supplied onto a substrate having a resist film, not all portions of the resist film are necessarily removed uniformly. For example, the resist film formed on the substrate may include a portion that is easily removed from one surface of the substrate and a portion that is difficult to remove from one surface of the substrate due to factors such as variations in the thickness of the resist film and variations in the adhesion force between the substrate and the resist film. Therefore, in order to surely remove the portion of the resist film that is difficult to remove from one surface of the substrate, it is conceivable to increase the supply time of SPM to the substrate.

[0006] However, when SPM is supplied to the portion of the resist film that is easily removed from one surface of the substrate for a long time, after the resist film is removed, SPM will be supplied to the exposed portion of the substrate for a long time. In this case, there is a possibility that a part of the substrate may be damaged by the oxidizing power of SPM. In addition, the supply of SPM for a long time increases the amount of SPM used per substrate.

[0007] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can remove an unnecessary film formed on one surface of a substrate without damaging the substrate and reduce the amount of processing liquid used.

Means for Solving the Problems

[0008] A substrate processing apparatus according to an aspect of the present invention is a substrate processing apparatus that performs a removal process of removing an unnecessary film formed on one surface of a substrate with a processing liquid containing chromic acid. The chromic acid is generated by mixing one of sulfuric acid and hydrogen peroxide solution as a first liquid and the other of sulfuric acid and hydrogen peroxide solution as a second liquid. The substrate processing apparatus includes a nozzle that discharges the processing liquid so as to collide with a plurality of portions of the one surface of the substrate, and a first pipe connected to the nozzle, and a first liquid supply system that supplies the first liquid to the nozzle through the first pipe. The substrate processing apparatus includes a plurality of second pipes respectively connected to different portions of a liquid flow path formed by the nozzle and the first pipe, and a second liquid supply system that supplies the second liquid to the liquid flow path through any one of the plurality of second pipes. The substrate processing apparatus further includes a control unit that controls the first liquid supply system and the second liquid supply system based on a plurality of predetermined operating conditions during the removal process. The plurality of operating conditions are conditions respectively associated with a plurality of portions of the substrate such that a processing liquid having a film removal ability corresponding to each of the plurality of portions of the one surface of the substrate collides with each of the plurality of portions.

[0009] A substrate processing method according to another aspect of the present invention is a substrate processing method using a substrate processing apparatus that performs a removal process of removing an unnecessary film formed on one surface of a substrate with a processing liquid containing a peracid. The peracid is generated by mixing one of sulfuric acid and hydrogen peroxide water as a first liquid and the other of sulfuric acid and hydrogen peroxide water as a second liquid. The substrate processing apparatus includes a nozzle that discharges the processing liquid so as to collide with a plurality of portions of the one surface of the substrate, and a first pipe connected to the nozzle, and a first liquid supply system that supplies the first liquid to the nozzle through the first pipe. The substrate processing apparatus further includes a plurality of second pipes respectively connected to different portions of a liquid flow path formed by the nozzle and the first pipe, and a second liquid supply system that supplies the second liquid into the first pipe through any one of the plurality of second pipes. The substrate processing method includes: a step of obtaining information regarding the film removal ability of the processing liquid to be supplied to each of the plurality of portions of the one surface of the substrate; a step of setting operating conditions of the first liquid supply system and the second liquid supply system corresponding to each of the plurality of portions of the substrate so that the processing liquid having a film removal ability corresponding to each of the plurality of portions of the one surface of the substrate collides therewith, based on the obtained information; and a step of controlling the first liquid supply system and the second liquid supply system based on the set operating conditions of the first liquid supply system and the second liquid supply system.

Effect of the Invention

[0010] According to the present invention, it is possible to remove an unnecessary film formed on one surface of a substrate without damaging the substrate and to reduce the amount of the processing liquid used.

Brief Description of the Drawings

[0011]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Embodiments for Carrying Out the Invention

[0012] Hereinafter, a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to an FPD (Flat Panel Display) substrate used for a liquid crystal display device or an organic EL (Electro Luminescence) display device, a semiconductor substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, or the like.

[0013] Further, the substrate processing apparatus described below is a single-wafer type substrate processing apparatus used for a removal process of removing an unnecessary film (in this example, a resist film) formed on one surface (main surface) of a substrate. In the removal process according to the present embodiment, a substrate having an unnecessary film formed on one surface is rotated in a horizontal posture. On one surface of the substrate, SPM (Sulfuric acid hydrogen peroxide mixture) is supplied as a processing liquid. SPM is a mixed liquid of sulfuric acid (H2SO4) and hydrogen peroxide water (H2O2), and contains peroxymonosulfuric acid (H2SO5). Peroxymonosulfuric acid is generated by a chemical reaction between sulfuric acid and hydrogen peroxide water, has a strong oxidizing power, and reacts with the unnecessary film to dissolve the film. Thereby, the unnecessary film is peeled off and removed from one surface of the substrate.

[0014] <1>Configuration of Substrate Processing Apparatus FIG. 1 is a schematic diagram showing the configuration of a substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 100 mainly includes a spin chuck 1, a cup 2, a cup elevating device 2D, three processing liquid supply devices 3A, 3B, 3C, a nozzle support portion 4, a nozzle moving device 5, a control unit 6, and an operation unit 9.

[0015] At least a part of the substrate processing apparatus 100 is provided in a chamber (not shown). The spin chuck 1 has a spin motor 1a, a spin base 1b, and chuck pins 1c. The spin motor 1a is provided at the bottom of the chamber such that the rotation axis protrudes upward. The spin base 1b has a disk shape and is attached to the upper end portion of the rotation axis of the spin motor 1a in a horizontal posture. A plurality of chuck pins 1c are provided on the upper surface of the spin base 1b and hold the peripheral portion of the substrate W. The spin motor 1a operates in a state where the plurality of chuck pins 1c hold the substrate W. Thereby, the substrate W rotates around the vertical axis.

[0016] As described above, in this example, a mechanical spin chuck 1 that holds the peripheral portion of the substrate W is used. However, the present invention is not limited to this, and an adsorption type spin chuck that adsorbs and holds the lower surface of the substrate W may be used instead of the mechanical spin chuck.

[0017] A cup 2 is provided so as to surround the spin chuck 1. The cup 2 is supported so as to be movable up and down by a cup lifting device 2D. The cup lifting device 2D includes an air cylinder or the like and moves the cup 2 between two predetermined height positions (an upper position and a lower position described later).

[0018] The three processing liquid supply devices 3A, 3B, and 3C basically have the same configuration. In FIG. 1, only the details of the configuration of the processing liquid supply device 3C are shown. The configuration of the processing liquid supply device 3C will be described on behalf of the three processing liquid supply devices 3A, 3B, and 3C.

[0019] The processing liquid supply device 3C mainly includes a first liquid supply system 10, a second liquid supply system 20, and a nozzle 30. The first liquid supply system 10 includes a first liquid supply source 11, a first pipe 12, a valve 12a, an adjustment unit 12b, and a stirring unit 12c. The first liquid supply source 11 is a supply source of sulfuric acid and is composed of a liquid feeding device including a factory's utility equipment or a liquid storage unit. The upstream end of the first pipe 12 is connected to the first liquid supply source 11. The downstream end of the first pipe 12 is connected to the nozzle 30. The valve 12a, the adjustment unit 12b, and the stirring unit 12c are provided in the first liquid supply source 11 so as to be arranged in this order from the upstream end to the downstream end of the first liquid supply source 11.

[0020] The valve 12a is, for example, a ball valve, allows the flow of the liquid in the first pipe 12 when in the open state, and blocks the flow of the liquid in the first pipe 12 when in the closed state. The adjustment unit 12b includes a flow regulator such as a motor needle valve or a regulator, and adjusts the flow rate of the liquid flowing through the first pipe 12. In this example, the adjustment unit 12b is a motor needle valve. The stirring unit 12c is, for example, an in-line mixer, and mixes a plurality of types of liquids (in this example, sulfuric acid and hydrogen peroxide solution) flowing through the first pipe 12 by generating a vortex or the like in the first pipe 12.

[0021] In the present embodiment, in the liquid flow path formed by the first pipe 12 and the nozzle 30, the portion located between the adjustment section 12b and the stirring section 12c is referred to as the first portion MP1. Further, the portion located between the stirring section 12c and the nozzle 30 is referred to as the second portion MP2, and the portion located in the nozzle 30 is referred to as the third portion MP3.

[0022] The second liquid supply system 20 includes a second liquid supply source 21, a second main pipe 22, a plurality (three in this example) of second sub-pipes 23, 24, 25, a plurality (three in this example) of valves 23a, 24a, 25a, and a plurality (three in this example) of adjustment sections 23b, 24b, 25b. The second liquid supply source 21 is a supply source of hydrogen peroxide water, and similar to the example of the first liquid supply source 11, it is composed of a liquid delivery device including a factory's utility equipment or a liquid storage section.

[0023] The upstream end of the second main pipe 22 is connected to the second liquid supply source 21. The second main pipe 22 has a plurality (two in this example) of branch sections arranged from upstream to downstream. The upstream ends of the second sub-pipes 23, 24, 25 are connected to the upstream branch section of the second main pipe 22, the downstream branch section of the second main pipe 22, and the downstream end of the second main pipe 22, respectively. On the other hand, the downstream ends of the second sub-pipes 23, 24, 25 are connected to the first portion MP1, the second portion MP2, and the third portion MP3 of the above liquid flow path, respectively.

[0024] In the second sub-pipe 23, the valve 23a and the adjustment section 23b are provided so as to be arranged in this order from upstream to downstream. In the second sub-pipe 24, the valve 24a and the adjustment section 24b are provided so as to be arranged in this order from upstream to downstream. In the second sub-pipe 25, the valve 25a and the adjustment section 25b are provided so as to be arranged in this order from upstream to downstream.

[0025] Valves 23a, 24a, and 25a have the same configuration as valve 12a. Also, adjustment parts 23b, 24b, and 25b have the same configuration as adjustment part 12b. Note that some of the valves among valves 12a, 23a, 24a, and 25a may have a configuration different from that of other valves. Also, some of the adjustment parts among adjustment parts 12b, 23b, 24b, and 25b may have a configuration different from that of other adjustment parts.

[0026] In each of the above three processing liquid supply devices 3A, 3B, and 3C, a part of the configuration of the first liquid supply system 10 and a part of the configuration of the second liquid supply system 20 are supported by, for example, an arm member 7 (FIG. 2) made of a hard resin.

[0027] FIG. 2 is a plan view of a substrate processing apparatus 100 for explaining the functions of the nozzle support part 4 and the nozzle moving device 5 of FIG. 1. As shown in the upper part of FIG. 2, in a plan view, rails 5r are provided at the bottom of the chamber on the sides of the spin chuck 1 and the cup 2. The rails 5r are provided so as to extend in one direction at a position close to the spin chuck 1 and the cup 2. In the following description, the direction in which the rails 5r extend in a plan view is referred to as the rail direction. Also, in a plan view, a straight line passing through the center of the substrate W held by the spin chuck 1 and extending in the rail direction is referred to as a virtual line VL.

[0028] The arm members 7 corresponding to each of the three processing liquid supply devices 3A, 3B, and 3C have, for example, a rod shape and support the nozzles 30 at their tip portions. The nozzle support part 4 supports three arm members 7 so that the three nozzles 30 are arranged on the virtual line VL and is provided on the rail 5r so as to be movable in the rail direction. A motor constituting a part of the nozzle moving device 5 is attached to the nozzle support part 4. Thereby, the nozzle support part 4 moves on the rail 5r when the nozzle moving device 5 operates.

[0029] In the substrate processing apparatus 100, a standby position WP is set at a position on a virtual line VL shifted from the spin chuck 1 and the cup 2 in a plan view. Also, a processing position PP is set at a position on the virtual line VL overlapping the spin chuck 1 in a plan view. When the substrate processing apparatus 100 is in a standby state where no removal process is performed, the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C are held at the standby position WP in a plan view as shown in the upper part of FIG. 2. On the other hand, when the substrate processing apparatus 100 performs a removal process, the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C are held at the processing position PP in a plan view as shown in the lower part of FIG. 2.

[0030] In the present embodiment, with the three nozzles 30 held at the processing position PP during the removal process, the three nozzles 30 are positioned at predetermined positions with respect to the substrate W held by the spin chuck 1.

[0031] Specifically, the nozzle 30 of the processing liquid supply device 3A is positioned so as to overlap the central portion of the substrate W (inner portion R1 (FIG. 4 etc., to be described later)) in a plan view. Also, the nozzle 30 of the processing liquid supply device 3B is positioned so as to overlap the intermediate portion (middle portion R2 (FIG. 4 etc., to be described later)) between the center of the substrate W and the outer peripheral end portion of the substrate W in a plan view. Further, the nozzle 30 of the processing liquid supply device 3C is positioned so as to overlap the peripheral portion of the substrate W (outer portion R3 (FIG. 4 etc., to be described later)) in a plan view. In the state thus positioned, each nozzle 30 is supported such that the discharge port of the nozzle 30 faces one surface of the substrate W. Thereby, during the removal process, the processing liquid is discharged from the discharge ports of the respective nozzles 30 toward three portions on one surface of the substrate W. The discharged processing liquid collides with one surface of the substrate W (precisely, one surface of the substrate W or a resist film covering one surface of the substrate W).

[0032] Note that the substrate processing apparatus 100 according to the present embodiment includes a rinse nozzle (not shown) and a rinse liquid supply system (not shown) that supplies rinse liquid to the rinse nozzle. The rinse nozzle discharges rinse liquid toward one surface of the substrate W on which the processing liquid remains after the resist film has been removed by the processing liquid. Thereby, the processing liquid on the substrate W is removed (rinse processing). Details of the control unit 6 and the operation unit 9 will be described later.

[0033] <2> Control System of Substrate Processing Apparatus The control system of the substrate processing apparatus 100 will be described together with the configurations of the control unit 6 and the operation unit 9 in FIG. 1. FIG. 3 is a block diagram showing the configuration of the control system of the substrate processing apparatus 100 in FIG. 1. As shown in FIG. 3, the control unit 6 includes a CPU (Central Processing Unit) 61, a RAM (Random Access Memory) 62, a ROM (Read Only Memory) 63, and a storage device 64.

[0034] The RAM 62 is used as a work area for the CPU 61. The system program is stored in the ROM 63. The storage device 64 includes a storage medium such as a hard disk or a semiconductor memory, and stores a film removal program for performing the removal process. Further, the storage device 64 stores a plurality of operation conditions of the substrate processing apparatus 100 related to the removal process. The plurality of operation conditions are conditions respectively associated with a plurality of portions of the substrate W to be subjected to the removal process. Details of the plurality of operation conditions will be described later.

[0035] Note that the film removal program may be provided in a state stored in a recording medium such as a CD-ROM 65 and installed in the ROM 63 or the storage device 64. Alternatively, the film removal program may be distributed from a server outside the substrate processing apparatus 100 via a communication network and installed in the ROM 63 or the storage device 64.

[0036] When the CPU 61 executes the film removal program, the operations of each part of the substrate processing apparatus 100 are controlled during the removal process. Specifically, the control unit 6 controls the spin motor 1a to rotate the substrate W while the substrate W is placed on the spin base 1b and held by a plurality of chuck pins 1c.

[0037] Also, the control unit 6 controls the cup lifting device 2D so that the cup 2 is held in the lower position when the substrate W is placed on the spin chuck 1, when the substrate W is taken out from the spin chuck 1, and when the removal process is not performed. Here, the lower position is the position of the cup 2 when the upper end of the cup 2 is below the substrate W held by the spin chuck 1.

[0038] Also, the control unit 6 controls the cup lifting device 2D so that the cup 2 is held in the upper position during the removal process. Here, the upper position is the position of the cup 2 when the upper end of the cup 2 is above the substrate W held by the spin chuck 1 and the inner peripheral surface of the cup 2 faces the outer peripheral end of the substrate W in the horizontal plane. In this case, the processing liquid scattered from the substrate W during the removal process is received by the inner peripheral surface of the cup 2. The processing liquid received by the cup 2 is discarded through the drain pipe.

[0039] Also, the control unit 6 controls the nozzle moving device 5 so that the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C are held at the processing position PP during the removal process. Also, the control unit 6 controls the nozzle moving device 5 so that the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C are held at the standby position WP during the period when the removal process is not performed.

[0040] As described above, a plurality of operation conditions of the substrate processing apparatus 100 regarding the removal process are stored in the storage device 64 of the control unit 6. The plurality of operation conditions include information regarding the operations of the plurality of valves 12a, 23a, 24a, 25a and the plurality of adjustment parts 12b, 23b, 24b, 25b of the three processing liquid supply devices 3A, 3B, and 3C.

[0041] During the removal process, the control unit 6 controls a plurality of valves 12a, 23a, 24a, 25a and a plurality of adjustment units 12b, 23b, 24b, 25b of the three processing liquid supply devices 3A, 3B, and 3C based on a plurality of operating conditions. In this case, in each of the processing liquid supply devices 3A, 3B, and 3C, with sulfuric acid flowing through the first pipe 12, hydrogen peroxide water is supplied from the second liquid supply system 20 to at least two of the first part MP1, the second part MP2, and the third part MP3 of the liquid flow path. Thereby, sulfuric acid and hydrogen peroxide water are mixed multiple times within the liquid flow path, and a processing liquid (SPM) is generated.

[0042] The operation unit 9 in FIG. 1 includes a keyboard and a pointing device and is configured to be operable by a user. The user can input the above-described plurality of operating conditions by operating the operation unit 9. When there is an input regarding the plurality of operating conditions in the operation unit 9, the control unit 6 stores the input operating conditions in the storage device 64.

[0043] <3>Ease of removing the film and film removal ability of the processing liquid In the following description, the degree of ease of removing the resist film during the removal process is referred to as removability. "High removability" means that the resist film is easily removed, and "low removability" means that the resist film is difficult to remove.

[0044] The removability of a single substrate W may vary among a plurality of portions on one surface of the substrate W depending on the material constituting the resist film formed on the single substrate W, the thickness distribution of the resist film, and the adhesion distribution between the resist film and the substrate W. The distribution of removability on one surface of a single substrate W can be grasped to a certain extent by subjecting a sample substrate of the same type as the single substrate W to a removal process in advance or performing a simulation of the removal process.

[0045] In the following description, the ability of the treatment liquid to remove the resist film is referred to as the film removal ability. The degree of the film removal ability represents the high reactivity of the treatment liquid with respect to the resist film formed on the substrate W, and is mainly determined by the concentration of the peracid in the treatment liquid.

[0046] FIG. 4 is a diagram showing an example of the time-series change in the peeling state of the resist film during the removal process. In FIG. 4, a plan view showing the state of the resist film when a treatment liquid having a film removal ability common to the entire one surface of the substrate W is supplied is shown in time series in the order of the upper, middle, and lower stages. In each of the upper, middle, and lower stages of FIG. 4, the resist film existing on the substrate W is shown by dot patterns.

[0047] Note that the time-series change in the peeling state of the resist film as shown in FIG. 4 can be obtained, for example, by imaging the state of one surface of the substrate W during the removal process with a camera every time a predetermined time elapses.

[0048] Here, an inner portion R1, a middle portion R2, and an outer portion R3 are defined on one surface of the substrate W. The inner portion R1 is located at the center of the substrate W. The middle portion R2 has an annular shape and surrounds the inner portion R1. The outer portion R3 has an annular shape including the outer peripheral end portion of the substrate W and surrounds the middle portion R2. The radius of the inner portion R1, the width of the middle portion R2 in the radial direction of the substrate W, and the width of the outer portion R3 in the radial direction of the substrate W are assumed to be equal to each other.

[0049] In the example of FIG. 4, after the removal process is started, the resist film is sequentially removed from the central portion of the substrate W toward the outer peripheral end portion of the substrate W. Therefore, it can be seen that the substrate W corresponding to the example of FIG. 4 has high removability in the inner portion R1, medium removability in the middle portion R2, and low removability in the outer portion R3.

[0050] Therefore, it can be seen that for the substrate W corresponding to the example of FIG. 4, it is preferable to supply a processing liquid with low film removal ability to the inner portion R1. In this case, by supplying a processing liquid with low film removal ability to the inner portion R1, it is possible to suppress the inner portion R1 on one surface of the substrate W from being damaged during the removal process.

[0051] Also, it can be seen that for the substrate W corresponding to the example of FIG. 4, it is preferable to supply a processing liquid with high film removal ability to the outer portion R3. In this case, by supplying a processing liquid with high film removal ability to the outer portion R3, the resist film on the outer portion R3 can be efficiently removed during the removal process. That is, the processing time for removing the resist film on the outer portion R3 can be reduced.

[0052] Furthermore, it can be seen that for the substrate W corresponding to the example of FIG. 4, it is preferable to supply a processing liquid having a medium film removal ability to the middle portion R2.

[0053] FIG. 5 is a diagram showing another example of the time-series change in the peeling state of the resist film during the removal process. In FIG. 5, similar to the example of FIG. 4, a plan view showing the state of the resist film when a processing liquid having a common film removal ability over the entire one surface of the substrate W is supplied is shown in time series in the upper, middle, and lower stages in this order. In each of the upper, middle, and lower stages of FIG. 5, the resist film existing on the substrate W is shown by dot patterns.

[0054] In the example of FIG. 5, after the removal process is started, the resist film is sequentially removed from the outer peripheral edge portion of the substrate W toward the central portion of the substrate W. Therefore, it can be seen that for the substrate W corresponding to the example of FIG. 5, the removability in the inner portion R1 is low, the removability in the middle portion R2 is medium, and the removability in the outer portion R3 is high.

[0055] Therefore, it can be seen that for the substrate W corresponding to the example of FIG. 5, it is preferable to supply a processing liquid with a high film removal ability to the inner portion R1. Also, it can be seen that for the substrate W corresponding to the example of FIG. 5, it is preferable to supply a processing liquid with a low film removal ability to the outer portion R3. Furthermore, it can be seen that for the middle portion R2, it is preferable to supply a processing liquid having a medium film removal ability.

[0056] The distribution of the ease of resist film removal in the substrate W as shown in FIGS. 4 and 5 can be grasped to a certain extent by subjecting a sample substrate W to a removal process in advance or performing a simulation. Also, according to the grasped distribution of the ease of removal, it is possible to predict the film removal ability of the processing liquid to be supplied to each of the plurality of portions of the substrate W as described above.

[0057] In the present embodiment, the film removal ability of the processing liquid to be supplied to each of the plurality of portions of the substrate W is predicted according to the ease of resist film removal on one surface of the substrate W to be processed. Then, information indicating the relationship between each of the plurality of portions of the substrate W and the preferable film removal ability corresponding to that portion is acquired as substrate portion information.

[0058] In the substrate processing apparatus 100 of FIG. 1, the three processing liquid supply devices 3A, 3B, and 3C are provided corresponding to the inner portion R1, the middle portion R2, and the outer portion R3 of the substrate W, respectively. The film removal ability of the processing liquid discharged from each nozzle 30 of the processing liquid supply devices 3A, 3B, and 3C can be adjusted by controlling the operations of the respective parts of the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply device.

[0059] Therefore, in the present embodiment, the operating conditions of the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply device 3A corresponding to the inner portion R1 of the substrate W are determined based on the acquired substrate portion information. Further, the operating conditions of the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply device 3B corresponding to the middle portion R2 of the substrate W are determined based on the substrate portion information. Furthermore, the operating conditions of the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply device 3C corresponding to the outer portion R3 of the substrate W are determined based on the substrate portion information. Also, a plurality of operating conditions corresponding to a plurality of portions (in this example, the inner portion R1, the middle portion R2, and the outer portion R3) of the substrate W are input, for example, by an operation of the operation unit 9 by the user, and stored in the storage device 64 of FIG. 3.

[0060] <4>Relationship between the film removal ability of the processing liquid and the operating conditions of the processing liquid supply device As described above, the degree of the film removal ability represents the high reactivity of the processing liquid with respect to the resist film formed on the substrate W, and is mainly determined by the concentration of the caro acid in the processing liquid. In each of the three processing liquid supply devices 3A, 3B, and 3C in FIG. 1, the film removal ability of the processing liquid discharged from the nozzle 30 can be adjusted by controlling a plurality of valves 12a, 23a, 24a, 25a and a plurality of adjustment units 12b, 23b, 24b, 25b.

[0061] Here, while referring to FIG. 1, the generation mechanism of caro acid in the processing liquid in each of the processing liquid supply devices 3A, 3B, and 3C will be described. In order to discharge the processing liquid from the nozzle 30, first, the valve 12a is opened. Also, the adjustment unit 12b is controlled so that sulfuric acid flows in the first pipe 12 at a predetermined flow rate. Further, when the valve 23a is opened, the adjustment unit 23b is controlled so that hydrogen peroxide solution flows in the second sub-pipe 23 at a predetermined flow rate. In this case, in the first pipe 12, sulfuric acid and hydrogen peroxide solution merge at the first portion MP1 and are sent to the stirring unit 12c. In the stirring unit 12c, sulfuric acid and hydrogen peroxide solution are stirred. Thereby, the chemical reaction between sulfuric acid and hydrogen peroxide solution is promoted, and caro acid is generated.

[0062] Heat is generated during the production of caroic acid. Therefore, the temperature of the processing liquid (mixed liquid) flowing through the stirring unit 12c rises. When the temperature of the processing liquid exceeds a predetermined temperature (for example, about the boiling point of hydrogen peroxide solution), a part of the hydrogen peroxide solution (hydrogen peroxide solution that does not contribute to the production of caroic acid) is easily decomposed into water and oxygen. Therefore, there is a limit to the amount of caroic acid generated in the range from the first part MP1 to the stirring unit 12c in the first pipe 12.

[0063] Therefore, in the above-described processing liquid supply devices 3A, 3B, and 3C, it is possible to supply fresh hydrogen peroxide solution to the second part MP2 and the third part MP3 downstream of the stirring unit 12c in the liquid flow path passing through the first pipe 12, respectively.

[0064] For example, with the caroic acid being generated in the stirring unit 12c as described above, the valve 24a is opened and the adjustment unit 24b is controlled so that the hydrogen peroxide solution flows at a predetermined flow rate in the second auxiliary pipe 24. In this case, fresh hydrogen peroxide solution that has not been heated to a high temperature is supplied to the second part MP2, whereby new caroic acid is generated. As a result, the concentration of caroic acid in the processing liquid flowing through the first pipe 12 on the downstream side of the second part MP2 increases compared to the processing liquid flowing through the stirring unit 12c.

[0065] Alternatively, with the caroic acid being generated in the stirring unit 12c as described above, the valve 25a is opened and the adjustment unit 25b is controlled so that the hydrogen peroxide solution flows at a predetermined flow rate in the second auxiliary pipe 25. In this case, fresh hydrogen peroxide solution that has not been heated to a high temperature is supplied to the third part MP3, whereby new caroic acid is generated. As a result, the concentration of caroic acid in the processing liquid discharged from the nozzle 30 increases compared to the processing liquid flowing through the stirring unit 12c.

[0066] As a result of conducting various experiments and simulations, the present inventor confirmed that the peracid concentration of the processing liquid varies according to the mixing ratio of sulfuric acid and hydrogen peroxide solution in each of a plurality of portions (MP1, MP2, MP3) of the liquid flow path. Furthermore, the present inventor obtained the finding that when mixing sulfuric acid and hydrogen peroxide solution in a plurality of portions (MP1, MP2, MP3) of the liquid flow path, the peracid concentration of the processing liquid discharged from the nozzle 30 tends to increase by increasing the mixing ratio of the hydrogen peroxide solution to sulfuric acid in the portion located downstream rather than the portion located upstream.

[0067] In addition, the present inventor obtained the finding that the peracid concentration of the processing liquid generated by mixing sulfuric acid and hydrogen peroxide solution at a predetermined mixing ratio in the first portion MP1 and the second portion MP2 tends to be higher than the peracid concentration of the processing liquid generated when mixing sulfuric acid and hydrogen peroxide solution at a mixing ratio in the first portion MP1 and the third portion MP3. That is, the present inventor obtained the finding that the peracid concentration of the processing liquid discharged from the nozzle 30 tends to increase as the portion where the hydrogen peroxide solution is added is located farther from the nozzle 30 in the liquid flow path.

[0068] Therefore, based on the obtained findings, the present inventor considered setting the operating conditions of the processing liquid supply devices 3A, 3B, and 3C so that a processing liquid having a film removal ability corresponding to each of a plurality of portions of the substrate is generated. In other words, the present inventor considered setting the operating conditions of the processing liquid supply devices 3A, 3B, and 3C so that a processing liquid having a peracid concentration corresponding to each of a plurality of portions of the substrate is generated.

[0069] <5>First specific example of a plurality of operating conditions In the following description, when distinguishing a plurality of second sub-pipes 23, 24, and 25 in one processing liquid supply device, the second sub-pipe 23 is referred to as "pipe A", the second sub-pipe 24 is referred to as "pipe B", and the second sub-pipe 25 is referred to as "pipe C".

[0070] FIG. 6 is a diagram showing a first specific example of a plurality of operating conditions set corresponding to a plurality of parts of a substrate W. In FIG. 6, the operating conditions of three processing liquid supply devices 3A, 3B, and 3C set for the inner part R1, the middle part R2, and the outer part R3 of the substrate W, respectively, are shown using a table. Further, below the table, an explanatory diagram of a plurality of parts on the substrate W is shown to facilitate understanding of the table. Furthermore, a configuration diagram of each of the processing liquid supply devices 3A, 3B, and 3C is shown to facilitate understanding of the table.

[0071] It is assumed that the first specific example of FIG. 6 is set for a substrate W having a resist film with high removability in the inner part R1, slightly high removability in the middle part R2, and low removability in the outer part R3. In this case, for the substrate W, it is preferable to supply a processing liquid with low film removal ability to the inner part R1, a processing liquid with slightly low film removal ability to the middle part R2, and a processing liquid with high film removal ability to the outer part R3.

[0072] Therefore, in this example, as the operating condition of the processing liquid supply device 3A corresponding to the inner part R1, the target ratio of the flow rates of the liquids flowing through the first pipe 12, pipe A, pipe B, and pipe C is set to 100:10:0:90 so that the concentration of the caloic acid in the generated processing liquid becomes low.

[0073] Also, in this example, as the operating condition of the processing liquid supply device 3B corresponding to the middle part R2, the target ratio of the flow rates of the liquids flowing through the first pipe 12, pipe A, pipe B, and pipe C is set to 100:20:0:80 so that the concentration of the caloic acid in the generated processing liquid becomes slightly low.

[0074] Furthermore, in this example, as the operating condition of the processing liquid supply device 3C corresponding to the outer part R3, the target ratio of the flow rates of the liquids flowing through the first pipe 12, pipe A, pipe B, and pipe C is set to 100:30:70:0 so that the concentration of the caloic acid in the generated processing liquid becomes high.

[0075] As a result, when the substrate processing apparatus 100 operates according to the plurality of operation conditions in FIG. 6, in the processing liquid supply device 3A, the valves 12a, 23a, 24a, and 25a are in the open state. Further, the adjustment units 12b, 23b, 24b, and 25b are respectively controlled so that the flow rate ratios of the liquids flowing through the first pipe 12, pipe A, pipe B, and pipe C become the target ratio of 100:10:0:90. In this case, since the target ratio of pipe B is 0, the valve 24a of pipe B may be in the closed state.

[0076] Also, in the processing liquid supply device 3B, the valves 12a, 23a, 24a, and 25a are in the open state. Further, the adjustment units 12b, 23b, 24b, and 25b are respectively controlled so that the flow rate ratios of the liquids flowing through the first pipe 12, pipe A, pipe B, and pipe C become the target ratio of 100:20:0:80. In this case, since the target ratio of pipe B is 0, the valve 24a of pipe B may be in the closed state.

[0077] Also, in the processing liquid supply device 3C, the valves 12a, 23a, 24a, and 25a are in the open state. Further, the adjustment units 12b, 23b, 24b, and 25b are respectively controlled so that the flow rate ratios of the liquids flowing through the first pipe 12, pipe A, pipe B, and pipe C become the target ratio of 100:30:70:0. In this case, since the target ratio of pipe C is 0, the valve 25a of pipe B may be in the closed state.

[0078] <6>Second specific example of a plurality of operation conditions FIG. 7 is a diagram showing a second specific example of a plurality of operation conditions respectively set corresponding to a plurality of portions of the substrate W. In FIG. 7, similar to the example of FIG. 6, the operation conditions of the three processing liquid supply devices 3A, 3B, and 3C respectively set for the inner portion R1, the middle portion R2, and the outer portion R3 of the substrate W are shown using a table. Also, below the table, an explanatory diagram of a plurality of portions of the substrate W is shown to facilitate understanding of the table. Further, a configuration diagram of each of the processing liquid supply devices 3A, 3B, and 3C is shown to facilitate understanding of the table.

[0079] The second specific example of FIG. 7 is set for a substrate W of a resist film having high removability in the inner portion R1, high removability in the middle portion R2, and low removability in the outer portion R3. In this case, for the substrate W, it is preferable to supply a processing liquid with low film removal ability to the inner portion R1, it is preferable to supply a processing liquid with low film removal ability to the middle portion R2, and it is preferable to supply a processing liquid with high film removal ability to the outer portion R3.

[0080] Here, in this example, in the three processing liquid supply devices 3A, 3B, and 3C, it is assumed that the flow rate of the liquid flowing through the first pipe 12 is predetermined when the valve 12a is in the open state. Also, it is assumed that the flow rates of the liquids flowing through the pipes A, B, and C are predetermined when the valves 23a, 24a, and 25a are in the open state. In this case, the chromic acid concentration of the processing liquid discharged from the nozzle 30 changes depending on the opening and closing states of the valve 12a of the first pipe 12, the valve 23a of the pipe A, the valve 24a of the pipe B, and the valve 25a of the pipe C.

[0081] Therefore, in this example, as the operating conditions of the processing liquid supply device 3A corresponding to the inner portion R1, the opening and closing states of the valves 12a, 23a, 24a, and 25a are set to "open", "open", "closed", and "open" respectively so that the chromic acid concentration of the generated processing liquid becomes low.

[0082] Also, in this example, as the operating conditions of the processing liquid supply device 3B corresponding to the middle portion R2, the opening and closing states of the valves 12a, 23a, 24a, and 25a are set to "open", "open", "closed", and "open" respectively so that the chromic acid concentration of the generated processing liquid becomes low.

[0083] Furthermore, in this example, as the operating conditions of the processing liquid supply device 3C corresponding to the outer portion R3, the opening and closing states of the valves 12a, 23a, 24a, and 25a are set to "open", "open", "open", and "closed" respectively so that the chromic acid concentration of the generated processing liquid becomes high.

[0084] As a result, when the substrate processing apparatus 100 operates according to the plurality of operating conditions shown in FIG. 7, in the processing liquid supply device 3A, the valves 12a, 23a, 25a are in the open state, and the valve 24a is in the closed state. Also, in the processing liquid supply device 3B, the valves 12a, 23a, 25a are in the open state, and the valve 24a is in the closed state. Further, in the processing liquid supply device 3C, the valves 12a, 23a, 24a are in the open state, and the valve 25a is in the closed state. Note that the plurality of adjustment units 12b, 23b, 24b, 25b are controlled so as to be in a state corresponding to predetermined flow rates for the first pipe 12, pipe A, pipe B, and pipe C, respectively.

[0085] <7>Film removal process by the control unit 6 FIG. 8 is a flowchart showing an example of the film removal process by the control unit 6 of FIG. 1. The film removal process described below is performed by the CPU 61 of the control unit 6 executing a film removal program stored in the storage device 64 on the RAM 62.

[0086] The film removal process by the control unit 6 is started, for example, in response to an untreated substrate W (a substrate W with a resist film formed on the entire surface) being carried into the chamber of the substrate processing apparatus 100 and placed on the spin chuck 1. In the initial state, it is assumed that the cup 2 is in the lower position and the plurality of nozzles 30 are in the standby position WP. Also, it is assumed that all of the plurality of valves 12a, 23a, 24a, 25a of the three processing liquid supply devices 3A, 3B, 3C are maintained in the closed state. Further, it is assumed that the storage device 64 of the control unit 6 stores a plurality of operating conditions of the three processing liquid supply devices 3A, 3B, 3C corresponding to a plurality of portions (inner portion R1, middle portion R2, and outer portion R3) of the substrate W to be processed, respectively.

[0087] When the film removal process is started, the CPU 61 controls the cup lifting device 2D to move the cup 2 from the lower position to the upper position (step S11). Further, the CPU 61 controls the spin motor 1a to rotate the substrate W held by the plurality of chuck pins 1c on the spin base 1b (step S12). Furthermore, the CPU 61 controls the nozzle moving device 5 to move the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C from the standby position WP to the processing position PP (step S13).

[0088] Subsequently, the CPU 61 reads a plurality of operating conditions stored in the storage device 64 (step S14). Next, the CPU 61 controls the plurality of valves 12a, 23a, 24a, 25a and the plurality of adjustment units 12b, 23b, 24b, 25b of the three processing liquid supply devices 3A, 3B, 3C based on the read plurality of operating conditions (step S15). Thereby, the processing liquid having the corresponding film removal ability is supplied to the inner portion R1, the middle portion R2, and the outer portion R3 of the substrate W, respectively.

[0089] In this example, it is assumed that the supply time of the processing liquid for removing the resist film is predetermined. Therefore, the CPU 61 measures the elapsed time from the start time of the process in step S15. Further, the CPU 61 determines whether or not to stop the supply of the processing liquid based on whether or not the measured time has reached the predetermined supply time (step S16).

[0090] When the supply of the processing liquid should not be stopped, the CPU 61 repeats the process of step S16. On the other hand, when the supply of the processing liquid should be stopped, the CPU 61 closes the plurality of valves 12a, 23a, 24a, 25a of the three processing liquid supply devices 3A, 3B, 3C to stop the supply of the processing liquid (step S17).

[0091] Next, the CPU 61 controls the nozzle moving device 5 to move the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C from the processing position PP to the standby position WP (step S18). Further, the CPU 61 controls a rinse liquid supply system (not shown) and controls the spin motor 1a to perform a rinse process and a drying process on the substrate W from which the resist film has been removed (step S19). The drying process in step S19 is a so-called spin drying process in which the substrate W after the rinse process is rotated at high speed to dry the substrate W.

[0092] After the drying process in step S19 is completed, the CPU 61 stops the rotation of the substrate W by controlling the spin motor 1a (step S20). Further, the CPU 61 controls the cup lifting device 2D to move the cup 2 from the upper position to the lower position (step S21), and ends the series of processes.

[0093] <8>Effect (a) In the substrate processing method according to the present embodiment, for each of a plurality of portions on one surface of the substrate W, substrate portion information is acquired as information regarding the film removing ability of the processing liquid to be supplied to the portion. Based on the substrate portion information, the operating conditions of the three processing liquid supply devices 3A, 3B, and 3C are set in the substrate processing apparatus 100.

[0094] During the removal process by the substrate processing apparatus 100, the three processing liquid supply devices 3A, 3B, and 3C are controlled to comply with a plurality of operating conditions corresponding to a plurality of portions (inner portion R1, middle portion R2, and outer portion R3) on one surface of the substrate W, respectively. By appropriately setting the plurality of operating conditions, a processing liquid having an appropriate film removal ability for removing the resist film is supplied to and collides with the plurality of portions on one surface of the substrate W, respectively. The film removal ability of the processing liquid functions most effectively when it is discharged from the nozzle 30 and reaches (collides with) the resist film on the substrate W. Thereby, it is possible to suppress the remaining of an unnecessary resist film on a part of one surface of the substrate W and the occurrence of damage on a part of one surface of the substrate W. Further, in order to remove the resist film formed on a portion of the substrate W that is less easily removable, it is not necessary to supply a large amount of the processing liquid to that portion.

[0095] As a result, it is possible to remove the unnecessary resist film formed on one surface of the substrate W without damaging one surface of the substrate W and to reduce the amount of the processing liquid used.

[0096] (b) In the above-described substrate processing apparatus 100, three processing liquid supply devices 3A, 3B, and 3C are used so as to correspond to the three portions of the substrate W, respectively. The three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C are moved between the standby position WP and the processing position PP by the nozzle support portion 4 and the nozzle moving device 5. In a state where the three nozzles 30 are arranged at the processing position PP, the three nozzles 30 face the inner portion R1, the middle portion R2, and the outer portion R3 on one surface of the substrate W, respectively. Therefore, by operating the three processing liquid supply devices 3A, 3B, and 3C simultaneously, it is possible to supply the processing liquid to the plurality of portions (inner portion R1, middle portion R2, and outer portion R3) of the substrate W from the three nozzles 30 simultaneously. Thereby, compared with the case where the processing liquid is sequentially supplied to the plurality of portions on one surface of the substrate W using one nozzle 30, the time required for the removal process can be shortened. As a result, contamination of the substrate W such as adhesion of particles due to a long processing time is prevented.

[0097] <9>Other Embodiments (a) The substrate processing apparatus 100 according to the above embodiment includes the processing liquid supply devices 3A, 3B, and 3C corresponding to the inner portion R1, the middle portion R2, and the outer portion R3 of the substrate W, respectively, but the present invention is not limited thereto.

[0098] The substrate processing apparatus 100 may have only one processing liquid supply device. FIG. 9 is a schematic diagram showing the configuration of the substrate processing apparatus 100 according to another embodiment. The substrate processing apparatus 100 in FIG. 9 includes only one processing liquid supply device 3 as a configuration for supplying a processing liquid to the substrate W. In the substrate processing apparatus 100, the arm member 7 (see FIG. 2) of the processing liquid supply device 3 is moved in the rail direction during the removal process. Thereby, the processing liquid discharged from one nozzle 30 is sequentially supplied to a plurality of portions on one surface of the substrate W.

[0099] Here, also in this example, before the removal process is performed, a plurality of operation conditions corresponding to a plurality of portions of the substrate W are set in the substrate processing apparatus 100. Thereby, during the removal process, the control of the operation states of the respective parts of the processing liquid supply device 3 is switched according to the portion of the substrate W facing the nozzle 30.

[0100] For example, assume a case where the plurality of operation conditions in FIG. 6 are set in the substrate processing apparatus 100 in FIG. 9. In this case, after the start of the removal process, for example, the nozzle 30 is positioned so as to face the inner portion R1 of the substrate W. In this state, the valves 12a, 23a, 24a, and 25a are opened. Further, the adjustment units 12b, 23b, 24b, and 25b are respectively controlled so that the flow rate ratio of the liquids flowing through the first pipe 12, the pipe A, the pipe B, and the pipe C becomes the target ratio of 100:10:0:90.

[0101] Next, when the removal of the resist film in the inner portion R1 of the substrate W is completed, the nozzle 30 is positioned to face the middle portion R2 of the substrate W. In this state, the valves 12a, 23a, 24a, and 25a are opened. Further, the adjustment units 12b, 23b, 24b, and 25b are respectively controlled so that the flow rate ratio of the liquid flowing through the first pipe 12, pipe A, pipe B, and pipe C becomes the target ratio of 100:20:0:80.

[0102] Next, when the removal of the resist film in the middle portion R2 of the substrate W is completed, the nozzle 30 is positioned to face the outer portion R3 of the substrate W. In this state, the valves 12a, 23a, 24a, and 25a are opened. Further, the adjustment units 12b, 23b, 24b, and 25b are respectively controlled so that the flow rate ratio of the liquid flowing through the first pipe 12, pipe A, pipe B, and pipe C becomes the target ratio of 100:30:70:0.

[0103] As described above, in the substrate processing apparatus 100 of FIG. 9, by moving one processing liquid supply device 3, processing liquids having appropriate film removal capabilities are sequentially supplied to the inner portion R1, middle portion R2, and outer portion R3 of the substrate W, respectively. Thereby, it is not necessary to provide a plurality of processing liquid supply devices 3 in the substrate processing apparatus 100. Therefore, in the substrate processing apparatus 100 of FIG. 9, an increase in the number of components is suppressed, and the configuration is simplified.

[0104] (b) In the substrate processing apparatus 100 according to the above embodiment, the three processing liquid supply devices 3A, 3B, and 3C each have an independent configuration, but the present invention is not limited to this. A part of the configuration of the three processing liquid supply devices 3A, 3B, and 3C may be commonly used among the three processing liquid supply devices 3A, 3B, and 3C.

[0105] FIG. 10 is a diagram showing an example of the configuration of three processing liquid supply devices 3A, 3B, and 3C according to another embodiment. The differences between the configuration of the three processing liquid supply devices 3A, 3B, and 3C in FIG. 10 and the configuration of the three processing liquid supply devices 3A, 3B, and 3C in FIG. 1 will be described.

[0106] In the processing liquid supply device 3A of FIG. 10, a branch portion BP is provided in a portion of the first pipe 12 between the stirring portion 12c and the second portion MP2. Further, a valve 12d is provided between the branch portion BP and the second portion MP2 in the first pipe 12. Upstream ends of two first pipes 12X and 12Y, which are led out of the processing liquid supply device 3A and extend to the processing liquid supply device 3B and the processing liquid supply device 3C respectively, are connected to the branch portion BP of the first pipe 12. Further, in the processing liquid supply device 3A of FIG. 10, the second main pipe 22 is led out of the processing liquid supply device 3A from the second liquid supply source 21.

[0107] In the processing liquid supply device 3B of FIG. 10, a nozzle 30 is connected to the downstream end of the first pipe 12X drawn out from the processing liquid supply device 3A. A valve 12d is provided in the first pipe 12X, similarly to the valve 12d of the processing liquid supply device 3A. In the liquid flow path formed by the first pipe 12X and the nozzle 30, a portion located between the valve 12d and the nozzle 30 is referred to as the fourth portion MP4. Further, a portion where the nozzle 30 is located is referred to as the fifth portion MP5.

[0108] The portion of the second main pipe 22 drawn out from the processing liquid supply device 3A is led into the processing liquid supply device 3B and further drawn out from the processing liquid supply device 3B. Thereby, a part of the second main pipe 22 constitutes a part of the processing liquid supply device 3B. Two branch portions are provided in the portion of the second main pipe 22 that constitutes a part of the processing liquid supply device 3B. Two second sub-pipes 26 and 27 are connected so as to connect the two branch portions of the second main pipe 22 to the fourth portion MP4 and the fifth portion MP5 of the liquid flow path respectively. A valve 26a and an adjustment portion 26b are provided in the second sub-pipe 26, and a valve 27a and an adjustment portion 27b are provided in the second sub-pipe 27.

[0109] In the processing liquid supply device 3C of FIG. 10, a nozzle 30 is connected to the downstream end of the first pipe 12Y drawn out from the processing liquid supply device 3A. A valve 12d is provided in the first pipe 12Y, similar to the valve 12d of the processing liquid supply device 3A. In the liquid flow path formed by the first pipe 12Y and the nozzle 30, the portion located between the valve 12d and the nozzle 30 is referred to as the sixth portion MP6. Also, the portion located at the nozzle 30 is referred to as the seventh portion MP7.

[0110] A portion of the second main pipe 22 drawn out from the processing liquid supply device 3B is led into the processing liquid supply device 3C. The downstream end of the second main pipe 22 is located inside the processing liquid supply device 3C. Thus, the portion including the downstream end of the second main pipe 22 constitutes a part of the processing liquid supply device 3C. One branch portion is provided in the portion of the second main pipe 22 that constitutes a part of the processing liquid supply device 3C. Two second sub-pipes 28, 29 are connected so as to connect one branch portion and the downstream end of the second main pipe 22 to the sixth portion MP6 and the seventh portion MP7 of the liquid flow path, respectively. A valve 28a and an adjustment portion 28b are provided in the second sub-pipe 28, and a valve 29a and an adjustment portion 29b are provided in the second sub-pipe 29.

[0111] In the three processing liquid supply devices 3A, 3B, 3C of FIG. 10 having the above configuration, as shown by the two-dot chain line frame, a part of the configuration of the processing liquid supply device 3A is commonly used as the common supply system 40 for the other processing liquid supply devices 3B, 3C.

[0112] Thus, by opening the valves 12a, 23a in the common supply system 40, sulfuric acid and hydrogen peroxide solution can be mixed in the stirring portion 12c. Also, by selectively switching the valves 12d of the three processing liquid supply devices 3A, 3B, 3C, the processing liquid (a mixture of sulfuric acid and hydrogen peroxide solution) that has passed through the stirring portion 12c can be selectively supplied to the three nozzles 30.

[0113] Also, by switching the opening and closing states of the valves 24a, 25a, 26a, 27a, 28a, and 29a of the three processing liquid supply devices 3A, 3B, and 3C, the supply and stop of hydrogen peroxide water from the second liquid supply source 21 to each liquid flow path can be switched. According to the configuration of FIG. 10, since a part of the configurations of the three processing liquid supply devices 3A, 3B, and 3C are commonly used, an increase in the number of parts of the substrate processing apparatus 100 is suppressed, and the configuration is simplified.

[0114] (c) In the substrate processing apparatus 100 according to the above embodiment, the three processing liquid supply devices 3A, 3B, and 3C may be moved in the horizontal plane so as to face three or more portions on the substrate W during the removal process.

[0115] For example, after the three processing liquid supply devices 3A, 3B, and 3C supply the processing liquid to three portions on the substrate W from the three nozzles 30, the three nozzles 30 may be horizontally moved so as to face three other portions on the substrate W. In this case, the processing liquid can be further supplied to three other portions on the substrate W. Thereby, the processing liquid having an appropriate film removal ability can be supplied to more portions on the substrate W.

[0116] (d) The substrate processing apparatus 100 according to the above embodiment has three processing liquid supply devices 3A, 3B, and 3C, but the present invention is not limited thereto. The substrate processing apparatus 100 may have two processing liquid supply devices, or may have four or more processing liquid supply devices. In this case, the larger the number of processing liquid supply devices, the more portions on the substrate W that can be processed simultaneously, and the processing efficiency of the substrate W is improved. On the other hand, the smaller the number of processing liquid supply devices, the more the increase in the number of parts of the substrate processing apparatus 100 is suppressed, and the configuration is simplified.

[0117] (e) In each of the processing liquid supply devices 3A, 3B, and 3C of the substrate processing apparatus 100 according to the above embodiment, the first liquid supply source 11 is a supply source of sulfuric acid, and the second liquid supply source 21 is a supply source of hydrogen peroxide water. However, the present invention is not limited thereto. In the above-described processing liquid supply devices 3A, 3B, and 3C, the first liquid supply source 11 may be a supply source of hydrogen peroxide water, and the second liquid supply source 21 may be a supply source of sulfuric acid.

[0118] (f) The second liquid supply system 20 of each of the processing liquid supply devices 3A, 3B, and 3C according to the above embodiment has three second sub-pipes 23, 24, and 25 as pipes for mixing hydrogen peroxide water into sulfuric acid. However, the present invention is not limited thereto. The second liquid supply system 20 may have only two second sub-pipes, or may have four or more second sub-pipes. When the second liquid supply system 20 has four or more second sub-pipes, mixing of sulfuric acid and hydrogen peroxide water can be performed at four or more portions of the liquid flow path formed by the first pipe 12 and the nozzle 30. Thereby, the degree of freedom of the operating conditions that can be set for generating the processing liquid is improved.

[0119] (g) In the above embodiment, an example in which sulfuric acid and hydrogen peroxide water are mixed at two of the first portion MP1, the second portion MP2, and the third portion MP3 of the liquid flow path to generate a processing liquid in each of the processing liquid supply devices 3A, 3B, and 3C has been described. However, the present invention is not limited thereto. A processing liquid may be generated by mixing sulfuric acid and hydrogen peroxide water at all of the first portion MP1, the second portion MP2, and the third portion MP3 of the liquid flow path.

[0120] (h) In the film removal process according to the above embodiment, after the treatment liquid containing chromic acid is supplied to the substrate W, the rinsing process and the drying process are performed in this order, but the present invention is not limited to this. The substrate processing apparatus 100 may include a supply apparatus (SC1 supply apparatus) that supplies a mixed solution (SC1) of aqueous ammonia and hydrogen peroxide water to the substrate W held by the spin chuck 1 as another treatment liquid. In this case, between the above-described rinsing process and drying process, supply and stop of SC1 to the substrate W by the SC1 supply apparatus and an additional rinsing process for washing away the SC1 remaining on the substrate W may be performed.

[0121] <10> Correspondence between each part of the embodiment and each component of the claims Hereinafter, examples of the correspondence between each component of the claims and each component of the embodiment will be described. As each component of the claims, various other elements having the configurations or functions described in the claims can also be used.

[0122] In the above embodiment, the substrate processing apparatus 100 is an example of a substrate processing apparatus, the nozzle 30 is an example of a nozzle, the first pipe 12 is an example of a first pipe, the first liquid supply system 10 is an example of a first liquid supply system, the plurality of second sub-pipes 23, 24, 25 are examples of a plurality of second pipes, the second liquid supply system 20 is an example of a second liquid supply system, and the control unit 6 is an example of a control unit.

[0123] Further, the adjustment unit 12b is an example of a first flow rate adjustment unit, the adjustment units 23b, 24b, 25b are examples of second flow rate adjustment units, the valves 23a, 24a, 25a are examples of a plurality of on-off valves, and the three nozzles 30 of the three treatment liquid supply apparatuses (3A, 3B, 3C) are examples of a plurality of nozzles.

[0124] Also, the three first liquid supply systems 10 of the three processing liquid supply devices (3A, 3B, 3C) are examples of a plurality of first liquid supply systems, the three second liquid supply systems 20 of the three processing liquid supply devices (3A, 3B, 3C) are examples of a plurality of second liquid supply systems, the nozzle support part 4 is an example of a nozzle support part, the nozzle moving device 5 is an example of a nozzle moving part, and the substrate part information is an example of information regarding the film removing ability of the processing liquid.

[0125] <11>Summary of the Embodiment (Item 1) The substrate processing apparatus according to Item 1 is a substrate processing apparatus that performs a removal process of removing an unnecessary film formed on one surface of a substrate with a processing liquid containing caloic acid, wherein the caloic acid is generated by mixing the first liquid, which is one of sulfuric acid and hydrogen peroxide water, and the second liquid, which is the other of sulfuric acid and hydrogen peroxide water, the substrate processing apparatus includes a nozzle that discharges the processing liquid so as to collide with a plurality of portions of the one surface of the substrate, a first liquid supply system including a first pipe connected to the nozzle and supplying the first liquid to the nozzle through the first pipe, a second liquid supply system including a plurality of second pipes respectively connected to different portions of a liquid flow path formed by the nozzle and the first pipe, and supplying the second liquid to the liquid flow path through any one of the plurality of second pipes, a control unit that controls the first liquid supply system and the second liquid supply system based on a plurality of predetermined operating conditions during the removal process, wherein the plurality of operating conditions are conditions respectively associated with a plurality of portions of the substrate such that a processing liquid having a film removing ability corresponding to each of the plurality of portions of the one surface of the substrate collides with each of the plurality of portions of the substrate.

[0126] In the substrate processing apparatus, a first liquid is supplied to a nozzle through a first pipe of a first liquid supply system. Further, a second liquid is supplied into the first pipe through any one of a plurality of second pipes of a second liquid supply system. In this case, the first liquid flowing through the first pipe and the second liquid are mixed at any one of a plurality of portions of the first pipe. Thereby, a processing liquid containing chromic acid is generated in the first pipe and discharged from the nozzle.

[0127] The first liquid supply system and the second liquid supply system are controlled to operate according to a plurality of operating conditions during the removal process. Thereby, the processing liquid having a film removal ability corresponding to each of a plurality of portions on one surface of the substrate impinges on each portion. The degree of the film removal ability of the processing liquid represents the high reactivity of the processing liquid with respect to the film on the substrate and is mainly determined by the concentration of chromic acid contained in the processing liquid.

[0128] On the other hand, the degree of ease of removing an unnecessary film (removability) during the removal process may vary among a plurality of portions on one surface of the substrate depending on the material constituting the film, the thickness distribution of the film, and the adhesion between the film and the substrate. The distribution of removability in the substrate to be processed can be grasped to some extent by subjecting a sample substrate to a removal process in advance or performing a simulation.

[0129] If the distribution of removability can be grasped, the film removal ability of the processing liquid to be supplied to each of a plurality of portions on one surface of the substrate can be predicted according to the distribution. For example, a processing liquid having a high film removal ability is supplied to a portion of the substrate where the removability is low (the film is difficult to remove). Thereby, while reducing the processing time of the portion, it is possible to suppress the remaining of an unnecessary film. On the other hand, a processing liquid having a low film removal ability is supplied to a portion of the substrate where the removability is high (the film is easily removed). Thereby, it is possible to suppress damage to the underlying portion of the film while removing the film.

[0130] According to the above configuration, the first liquid supply system and the second liquid supply system are controlled so as to comply with a plurality of operating conditions respectively corresponding to a plurality of portions on one surface of the substrate. By appropriately setting the plurality of operating conditions, a processing liquid having an appropriate film removing ability for removing the film is supplied to each of the plurality of portions on one surface of the substrate. Therefore, it is possible to suppress a part of an unnecessary film from remaining on a part of one surface of the substrate or damage from occurring on a part of one surface of the substrate. Further, in order to remove a film formed on a portion of the substrate with low removability, it is not necessary to supply a large amount of processing liquid to the portion.

[0131] As a result, it becomes possible to remove an unnecessary film formed on one surface of the substrate without damaging one surface of the substrate and reduce the amount of the processing liquid used.

[0132] (Item 2) In the substrate processing apparatus according to Item 1, the first liquid supply system includes a first flow rate adjustment unit that adjusts the flow rate of the first liquid flowing through the first pipe, the second liquid supply system includes a plurality of second flow rate adjustment units that respectively adjust the flow rates of the second liquid flowing through the plurality of second pipes, the plurality of operating conditions include a target ratio between the flow rate of the second liquid flowing through each second pipe associated with each of the plurality of portions on the one surface of the substrate and the flow rate of the first liquid flowing through the first pipe, the control unit may control the first flow rate adjustment unit and the plurality of second flow rate adjustment units so that, for each portion of the substrate where the processing liquid discharged from the nozzle will collide during the removal process, the ratio between the flow rate of the second liquid flowing through each second pipe and the flow rate of the first liquid flowing through the first pipe becomes the target ratio associated with the portion.

[0133] The degree of the film removal ability of the processing liquid discharged from the nozzle onto the substrate is determined according to the ratio between the flow rate of the second liquid flowing through each second pipe and the flow rate of the first liquid flowing through the first pipe. Therefore, by appropriately setting a plurality of target ratios corresponding to a plurality of portions on one surface of the substrate, a processing liquid having an appropriate film removal ability for removing the film is supplied to each of the plurality of portions on one surface of the substrate.

[0134] (Item 3) In the substrate processing apparatus according to Item 1, the second liquid supply system further includes a plurality of on-off valves provided in each of the plurality of second pipes, the plurality of operating conditions include the opening and closing states of the plurality of on-off valves associated with each of the plurality of portions on the one surface of the substrate, during the removal process, the control unit may control the plurality of on-off valves such that the opening and closing states of the plurality of on-off valves become the opening and closing states corresponding to each portion of the substrate where the processing liquid discharged from the nozzle will collide.

[0135] The degree of the film removal ability of the processing liquid discharged from the nozzle onto the substrate is determined according to from which of the plurality of second pipes the second liquid is supplied to the first pipe. Therefore, by appropriately setting a plurality of opening and closing states corresponding to a plurality of portions on one surface of the substrate, a processing liquid having an appropriate film removal ability for removing the film is supplied to each of the plurality of portions on one surface of the substrate.

[0136] (Item 4) In the substrate processing apparatus according to Items 1 to 3, the nozzle includes a plurality of nozzles respectively corresponding to the plurality of portions on the one surface of the substrate, the first liquid supply system includes a plurality of first liquid supply systems respectively corresponding to the plurality of nozzles, the second liquid supply system includes a plurality of second liquid supply systems respectively corresponding to the plurality of nozzles, the substrate processing apparatus, The substrate processing apparatus may further include a nozzle support portion that supports the plurality of nozzles such that the discharge ports of the processing liquid of the plurality of nozzles face the plurality of portions of the one surface of the substrate, respectively.

[0137] In this case, by operating the plurality of first liquid supply systems and the plurality of second liquid supply systems simultaneously, it becomes possible to supply the processing liquid from the plurality of nozzles to the plurality of portions of the substrate simultaneously. Thereby, compared with the case where the processing liquid is sequentially supplied to the plurality of portions of the one surface of the substrate using one nozzle, the time required for the removal process can be shortened. Therefore, contamination of the substrate such as adhesion of particles due to a long processing time is prevented.

[0138] (Item 5) In the substrate processing apparatus according to Items 1 to 3, the substrate processing apparatus further includes a nozzle moving portion that supports the nozzle at a position above the substrate and relatively moves the nozzle and the substrate in a horizontal plane, and the control portion may control the nozzle moving portion such that the processing liquid discharged from the nozzle sequentially collides with the plurality of portions of the one surface of the substrate during the removal process.

[0139] In this case, in order to discharge the processing liquid to the plurality of portions of the substrate, it is not necessary to prepare a plurality of nozzles. Therefore, an increase in the number of parts of the substrate processing apparatus is suppressed, and the configuration is simplified.

[0140] (Item 6) The substrate processing method according to Item 6 is a substrate processing method using a substrate processing apparatus that performs a removal process of removing an unnecessary film formed on one surface of a substrate with a processing liquid containing chromic acid, wherein the chromic acid is generated by mixing one of sulfuric acid and hydrogen peroxide solution as a first liquid and the other of sulfuric acid and hydrogen peroxide solution as a second liquid, and the substrate processing apparatus includes a nozzle that discharges the processing liquid so as to collide with a plurality of portions of the one surface of the substrate, A first liquid supply system including a first pipe connected to the nozzle and supplying the first liquid to the nozzle through the first pipe; A second liquid supply system including a plurality of second pipes respectively connected to a plurality of different portions of a liquid flow path formed by the nozzle and the first pipe, and supplying the second liquid into the first pipe through any one of the plurality of second pipes; The substrate processing method includes: For each of the plurality of portions of the one surface of the substrate, obtaining information regarding the film removal ability of the processing liquid to be supplied to the portion; Based on the obtained information, setting operating conditions of the first liquid supply system and the second liquid supply system corresponding to each of the plurality of portions of the substrate such that a processing liquid having a film removal ability corresponding to each of the plurality of portions of the one surface of the substrate collides; Controlling the first liquid supply system and the second liquid supply system based on the set operating conditions of the first liquid supply system and the second liquid supply system.

[0141] The degree of ease of removing an unnecessary film during the removal process (removability) may differ among a plurality of portions of one surface of the substrate depending on the material constituting the film, the thickness distribution of the film, and the adhesion between the film and the substrate. The distribution of removability in the substrate to be processed can be grasped to a certain extent by subjecting a sample substrate to a removal process in advance or performing a simulation.

[0142] If the distribution of removability can be grasped, the film removal ability of the processing liquid to be supplied to each of a plurality of portions on one surface of the substrate can be predicted according to the distribution. For example, a processing liquid having a high film removal ability is supplied to a portion of the substrate where the removability is low (the film is difficult to remove). Thereby, while reducing the processing time of the portion, unnecessary film residue can be suppressed. On the other hand, a processing liquid having a low film removal ability is supplied to a portion of the substrate where the removability is high (the film is easily removed). Thereby, it is possible to suppress damage to the underlying portion of the film while removing the film. The degree of the film removal ability of the processing liquid represents the height of the reactivity of the processing liquid with respect to the film on the substrate, and is mainly determined by the concentration of the carboxylic acid contained in the processing liquid.

[0143] In the above-described substrate processing method, for each of a plurality of portions on one surface of the substrate, information regarding the film removal ability of the processing liquid to be supplied to the portion is acquired. Based on the acquired information regarding the film removal ability of the processing liquid, the operating conditions of the first liquid supply system and the second liquid supply system are set. The first liquid supply system and the second liquid supply system are controlled so as to comply with a plurality of operating conditions corresponding to a plurality of portions on one surface of the substrate.

[0144] When controlling the first liquid supply system and the second liquid supply system, the first liquid is supplied to the nozzle through the first pipe of the first liquid supply system. Further, the second liquid is supplied into the first pipe through any one of the plurality of second pipes of the second liquid supply system. In this case, at any one of the plurality of portions of the first pipe, the first liquid flowing through the first pipe and the second liquid are mixed. A processing liquid containing carboxylic acid is generated in the first pipe and discharged from the nozzle. Thereby, a processing liquid having a film removal ability corresponding to each of a plurality of portions on one surface of the substrate collides.

[0145] By appropriately setting a plurality of operating conditions, a processing liquid having an appropriate film removal ability for removing the film is supplied to each of a plurality of portions on one surface of the substrate. Therefore, it is possible to suppress a part of an unnecessary film from remaining on a part of one surface of the substrate or damage from occurring on a part of one surface of the substrate. Further, in order to remove the film formed on a portion of the substrate that is difficult to remove, it is not necessary to supply a large amount of the processing liquid to the portion.

[0146] As a result, it is possible to remove an unnecessary film formed on one surface of the substrate without damaging one surface of the substrate and to reduce the amount of the processing liquid used.

[0147] (Item 7) In the substrate processing method according to Item 6, the plurality of operating conditions include a target ratio between the flow rate of the second liquid flowing through each second pipe associated with each of the plurality of portions on the one surface of the substrate and the flow rate of the first liquid flowing through the first pipe, the step of controlling the first liquid supply system and the second liquid supply system may include controlling the first flow rate adjustment unit and the plurality of second flow rate adjustment units such that, during the removal process, for each portion of the substrate where the processing liquid discharged from the nozzle will collide, the ratio between the flow rate of the second liquid flowing through each second pipe and the flow rate of the first liquid flowing through the first pipe becomes the target ratio associated with the portion.

[0148] The degree of the film removal ability of the processing liquid discharged from the nozzle onto the substrate is determined according to the ratio between the flow rate of the second liquid flowing through each second pipe and the flow rate of the first liquid flowing through the first pipe. Therefore, by appropriately setting a plurality of target ratios corresponding to a plurality of portions on one surface of the substrate, a processing liquid having an appropriate film removal ability for removing the film is supplied to each of the plurality of portions on one surface of the substrate.

[0149] (Item 8) In the substrate processing method according to Item 6, the second liquid supply system further includes a plurality of on-off valves respectively provided in the plurality of second pipes, The plurality of operating conditions includes the open / closed states of the plurality of on-off valves associated with each of the plurality of portions on the one surface of the substrate. The step of controlling the first liquid supply system and the second liquid supply system may include controlling the plurality of on-off valves such that the open / closed states of the plurality of on-off valves become the open / closed states corresponding to each portion of the substrate where the processing liquid discharged from the nozzle collides during the removal process.

[0150] The degree of the film removal ability of the processing liquid discharged from the nozzle onto the substrate is determined according to from which of the plurality of second pipes the second liquid is supplied to the first pipe. Therefore, by appropriately setting the plurality of open / closed states corresponding to the plurality of portions on one surface of the substrate, processing liquids having appropriate film removal abilities for removing the film are respectively supplied to the plurality of portions on one surface of the substrate.

[0151] (Item 9) In the substrate processing method according to Items 6 to 8, The nozzle includes a plurality of nozzles respectively corresponding to the plurality of portions on the one surface of the substrate. The first liquid supply system includes a plurality of first liquid supply systems respectively corresponding to the plurality of nozzles. The second liquid supply system includes a plurality of second liquid supply systems respectively corresponding to the plurality of nozzles. The substrate processing method includes supporting the plurality of nozzles such that the discharge ports of the processing liquid of the plurality of nozzles face the plurality of portions on the one surface of the substrate during the removal process.

[0152] In this case, by operating the plurality of first liquid supply systems and the plurality of second liquid supply systems simultaneously, it becomes possible to supply the processing liquid to the plurality of portions of the substrate from the plurality of nozzles simultaneously. Thereby, compared with the case where the processing liquid is sequentially supplied to the plurality of portions on one surface of the substrate using one nozzle, the time required for the removal process can be shortened. Therefore, contamination of the substrate such as adhesion of particles due to an increase in the processing time is prevented.

[0153] (Item 10) In the substrate processing method according to Items 6 to 8, the substrate processing method is at the time of the removal process, the nozzle may be supported at a position above the substrate so that the processing liquid discharged from the nozzle sequentially collides with a plurality of portions of the one surface of the substrate, and the step of relatively moving the nozzle and the substrate in a horizontal plane may be further included.

[0154] In this case, in order to discharge the processing liquid to a plurality of portions of the substrate, it is not necessary to prepare a plurality of nozzles. Therefore, an increase in the number of parts of the substrate processing apparatus is suppressed, and the configuration is simplified.

Explanation of Signs

[0155] 1... Spin chuck, 1a... Spin motor, 1b... Spin base, 1c... Chuck pin, 2... Cup, 2D... Cup lifting device, 3... Processing liquid supply device, 3A... Processing liquid supply device, 3B... Processing liquid supply device, 3C... Processing liquid supply device, 4... Nozzle support portion, 5... Nozzle moving device, 5r... Rail, 6... Control portion, 7... Arm member, 9... Operation portion, 10... First liquid supply system, 11... First liquid supply source, 12, 12X, 12Y... First piping, 12a, 12d, 23a, 24a, 25a, 26a, 27a, 28a, 29a... Valve, 12b, 23b, 24b, 25b, 26b, 27b, 28b, 29b... Adjustment portion, 12c... Stirring portion, 20... Second liquid supply system, 21... Second liquid supply source, 22... Second main piping, 23, 24, 25, 26, 27, 28, 29... Second sub-piping, 30... Nozzle, 40... Common supply system, 61... CPU, 62... RAM, 63... ROM, 64... Storage device, 65... CD-ROM, 100... Substrate processing apparatus, BP... Branch portion, MP1... First portion, MP2... Second portion, MP3... Third portion, MP4... Fourth portion, MP5... Fifth portion, MP6... Sixth portion, MP7... Seventh portion, PP... Processing position, R1... Inner portion, R2... Middle portion, R3... Outer portion, VL... Virtual line, W... Substrate, WP... Standby position

Claims

1. A substrate processing apparatus that performs a removal process for removing an unnecessary film formed on one surface of a substrate with a processing liquid containing a caro acid, wherein the caro acid is generated by mixing one of sulfuric acid and hydrogen peroxide solution as a first liquid and the other of sulfuric acid and hydrogen peroxide solution as a second liquid, the substrate processing apparatus comprising: a nozzle that discharges the processing liquid so as to collide with a plurality of portions of the one surface of the substrate; a first liquid supply system including a first pipe connected to the nozzle, the first liquid supply system supplying the first liquid to the nozzle through the first pipe; a second liquid supply system including a plurality of second pipes respectively connected to different portions of a liquid flow path formed by the nozzle and the first pipe, the second liquid supply system supplying the second liquid to the liquid flow path through any one of the plurality of second pipes; a control unit that controls the first liquid supply system and the second liquid supply system based on a plurality of predetermined operating conditions during the removal process; the plurality of operating conditions being conditions respectively associated with a plurality of portions of the substrate such that a processing liquid having a film removal ability corresponding to each of the plurality of portions of the one surface of the substrate collides with each of the plurality of portions of the substrate. A substrate processing apparatus.

2. The first liquid supply system includes a first flow rate adjustment unit that adjusts a flow rate of the first liquid flowing through the first pipe, the second liquid supply system includes a plurality of second flow rate adjustment units that respectively adjust flow rates of the second liquid flowing through the plurality of second pipes, the plurality of operating conditions include a target ratio between a flow rate of the second liquid flowing through each second pipe associated with each of the plurality of portions of the one surface of the substrate and a flow rate of the first liquid flowing through the first pipe, the control unit, during the removal process, for each portion of the substrate where the processing liquid discharged from the nozzle is to collide, adjusts the first flow rate adjustment unit and the plurality of second flow rate adjustment units such that a ratio between a flow rate of the second liquid flowing through each second pipe and a flow rate of the first liquid flowing through the first pipe becomes the target ratio associated with the portion. The substrate processing apparatus according to claim 1.

3. The second liquid supply system further includes a plurality of on-off valves respectively provided in the plurality of second pipes, the plurality of operating conditions include open / closed states of the plurality of on-off valves respectively associated with the plurality of portions of the one surface of the substrate. The control unit controls the plurality of on-off valves such that, at the time of the removal process, the on-off states of the plurality of on-off valves become on-off states corresponding to each portion of the substrate against which the processing liquid discharged from the nozzles collides. The substrate processing apparatus according to claim 1.

4. The nozzle includes a plurality of nozzles respectively corresponding to the plurality of portions of the one surface of the substrate. The first liquid supply system includes a plurality of first liquid supply systems respectively corresponding to the plurality of nozzles. The second liquid supply system includes a plurality of second liquid supply systems respectively corresponding to the plurality of nozzles. The substrate processing apparatus further includes a nozzle support unit that supports the plurality of nozzles such that the discharge ports of the processing liquid of the plurality of nozzles face the plurality of portions of the one surface of the substrate. The substrate processing apparatus according to any one of claims 1 to 3.

5. further includes a nozzle moving unit that supports the nozzle at a position above the substrate and relatively moves the nozzle and the substrate in a horizontal plane. The control unit controls the nozzle moving unit such that, at the time of the removal process, the processing liquid discharged from the nozzles sequentially collides with the plurality of portions of the one surface of the substrate. The substrate processing apparatus according to any one of claims 1 to 3.

6. A substrate processing method using a substrate processing apparatus that performs a removal process for removing an unnecessary film formed on one surface of a substrate with a processing liquid containing chromic acid, wherein the chromic acid is generated by mixing one of sulfuric acid and hydrogen peroxide water as a first liquid and the other of sulfuric acid and hydrogen peroxide water as a second liquid. The substrate processing apparatus includes a nozzle that discharges the processing liquid so as to collide with a plurality of portions of the one surface of the substrate, a first liquid supply system including a first pipe connected to the nozzle and supplying the first liquid to the nozzle through the first pipe, and a second liquid supply system including a plurality of second pipes respectively connected to different portions of the liquid flow path formed by the nozzle and the first pipe, and supplying the second liquid into the first pipe through any one of the plurality of second pipes. The substrate processing method includes a step of acquiring information regarding the film removal ability of the processing liquid to be supplied to each of the plurality of portions of the one surface of the substrate. Based on the acquired information, the operating conditions of the first liquid supply system and the second liquid supply system corresponding to each of the plurality of portions of the one surface of the substrate are set so that a processing liquid having a film removal ability corresponding to each of the plurality of portions of the one surface of the substrate collides therewith; A substrate processing method including: controlling the first liquid supply system and the second liquid supply system based on the set operating conditions of the first liquid supply system and the second liquid supply system.

7. The plurality of operating conditions include a target ratio between the flow rate of the second liquid flowing through each second pipe associated with each of the plurality of portions of the one surface of the substrate and the flow rate of the first liquid flowing through the first pipe; The step of controlling the first liquid supply system and the second liquid supply system includes, during the removal process, for each portion of the substrate where the processing liquid discharged from the nozzle is to collide, controlling the first flow rate adjustment unit and the plurality of second flow rate adjustment units so that the ratio between the flow rate of the second liquid flowing through each second pipe and the flow rate of the first liquid flowing through the first pipe becomes the target ratio associated with that portion. The substrate processing method according to claim 6.

8. The second liquid supply system further includes a plurality of on-off valves respectively provided in the plurality of second pipes; The plurality of operating conditions include the open / closed states of the plurality of on-off valves associated with each of the plurality of portions of the one surface of the substrate; The step of controlling the first liquid supply system and the second liquid supply system includes, during the removal process, for each portion of the substrate where the processing liquid discharged from the nozzle is to collide, controlling the plurality of on-off valves so that the open / closed states of the plurality of on-off valves become the open / closed states corresponding to that portion. The substrate processing method according to claim 6.

9. The nozzle includes a plurality of nozzles respectively corresponding to the plurality of portions of the one surface of the substrate; The first liquid supply system includes a plurality of first liquid supply systems respectively corresponding to the plurality of nozzles; The second liquid supply system includes a plurality of second liquid supply systems respectively corresponding to the plurality of nozzles; The substrate processing method includes: During the removal process, supporting the plurality of nozzles so that the liquid discharge ports of the processing liquid of the plurality of nozzles face the plurality of portions of the one surface of the substrate respectively. The substrate processing method according to any one of claims 6 to 8.

10. The substrate processing method according to any one of claims 6 to 8, further comprising a step of supporting the nozzle at a position above the substrate and relatively moving the nozzle and the substrate in a horizontal plane so that the processing liquid discharged from the nozzle sequentially collides with a plurality of portions of the one surface of the substrate during the removal process.

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