Package, manufacturing method thereof and electrical system

Abstract

To provide a package, a manufacturing method thereof and an electrical system.SOLUTION: A package 200 comprises: a mounting substrate 21 with at least one power die having a power device and attached to a first surface of the mounting substrate; and a lead frame 23 comprising a first die attachment portion 231 and at least one first lead 235, wherein at least one cooperation device die 233 having a cooperation device for cooperating with the power device is attached to the first die attachment portion, and wherein during a normal operation an amount of heat generated by the cooperation device is less than an amount of heat generated by the power device, wherein the at least one first lead is coupled to the first surface of the mounting substrate to be electrically coupled to the power die.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] (Cross - Reference to Related Applications) This application claims the benefit of priority of Chinese Patent Application Publication No. 202311862019.2, titled "Package, Manufacturing Method Thereof, And Electrical System", filed on December 29, 2023, and this Chinese patent application is incorporated herein by reference in its entirety to the maximum extent permitted by law.

[0002] The present disclosure relates to a package, a manufacturing method (packaging method), and an electrical system including the package.

Background Art

[0003] Intelligent Power Modules (IPMs) have been attracting increasing attention. In mature - designed IPM packages, it is a trend in package design to improve performance by fine - tuning the package design. On the other hand, in order to improve the heat dissipation performance, expensive high - end substrates such as Direct Bond Copper (DBC) substrates are used to mount power - side devices in IPM packages, resulting in a significant increase in cost.

[0004] In addition, in conventional IPM packages, the size of the leads of the lead frame for connection to the DBC is mainly designed to ensure the soldering strength of the soldering process (such as using solder paste), resulting in a relatively large lead area. In addition, due to the constraints of the DBC layout, the lead sizes may not be equal or similar, and as a result, the lead distribution becomes non - uniform. Therefore, there is a risk of mold compound overflowing on the back side of the DBC substrate during molding.

[0005] Therefore, it is necessary to improve the package and manufacturing method (packaging method) in the prior art.

Summary of the Invention

[0006] According to one aspect of the present disclosure, there is provided a package comprising: a mounting substrate having at least one power die attached to a first surface of the mounting substrate, the power die having a power device; a first die attachment portion and at least one first lead, and at least one cooperating device die having a cooperating device for cooperating with the power device, the at least one cooperating device die being attached to the first die attachment portion, and during normal operation, the amount of heat generated by the cooperating device being less than the amount of heat generated by the power device; and a lead frame, wherein at least one first lead is coupled to the first surface of the mounting substrate so as to be electrically coupled to the power die.

[0007] According to another aspect of the present disclosure, there is also provided an electrical system that may include a package according to any of the embodiments of the present disclosure.

[0008] According to another aspect of the present disclosure, a method for manufacturing a package includes attaching a power die including a power device to a first surface of a mounting substrate, attaching a cooperating device die to a first die attachment portion of a lead frame, the lead frame further including at least one first lead, the cooperating device die including a cooperating device that cooperates with the power device, the amount of heat generated by the cooperating device during normal operation being less than the amount of heat generated by the power device, attaching the at least one first lead to the first surface of the mounting substrate so as to be electrically coupled to the power die, performing wire bonding including bonding a first wire to the power device and the cooperating device, and applying a mold compound to encapsulate at least a portion of the mounting substrate, the power die, the cooperating device die, the first wire, and at least a portion of the lead frame.

[0009] Other features and advantages of the present disclosure will become apparent from the following detailed description of exemplary embodiments of the present disclosure with reference to the accompanying drawings.

Brief Description of the Drawings

[0010] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0011] The present disclosure will be more clearly understood from the following detailed description with reference to the accompanying drawings.

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

[0012] In the embodiments described below, in order to indicate the same parts or parts having the same function, the same reference symbols may be commonly used among different drawings, and repeated descriptions thereof are omitted. It should be noted that in this specification, similar or identical reference numerals and letters are used to indicate similar or identical items. Thus, once an item is defined in one drawing, there is no need to provide further consideration of this item in subsequent drawings.

[0013] For ease of understanding, the positions, dimensions, and ranges of the structures shown in the drawings do not necessarily represent the actual positions, dimensions, and ranges. Therefore, the disclosed invention is not limited to the positions, dimensions, ranges, etc. disclosed in the accompanying drawings and the like.

Embodiments for Carrying Out the Invention

[0014] Here, various exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. It should be noted that unless otherwise specified, the relative arrangements, mathematical formulas, and values of the components and steps described in these embodiments are not intended to limit the scope of the present disclosure. Techniques, methods, and devices known to those skilled in the relevant technical fields may not be considered in detail, but where appropriate, these techniques, methods, and devices should be regarded as part of this specification.

[0015] It should be understood that the following description of at least one exemplary embodiment is merely illustrative and is not intended to limit the present disclosure in any way as to its application or use. Also, it should be understood that any embodiment illustrated herein is not necessarily more preferred or advantageous than other embodiments. The present disclosure is not intended to be limited by any explicit or implicit theory presented in the prior art field, background, summary, or the following detailed description.

[0016] In addition, some specific terms may be used in the following description for reference purposes only and are not, therefore, for the purpose of limitation. For example, unless explicitly stated otherwise in the context, the terms "first", "second", and other numerical terms indicating such an order referring to structures, elements, etc. do not indicate any sequence or order.

[0017] Also, the words "comprise", "include" or their variants, as used herein, are intended to indicate the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, and / or components, and / or combinations thereof.

[0018] The term "chip" as used herein includes, but is not limited to, dies.

[0019] FIG. 1 shows a schematic top view of a conventional IPM package. It should be understood that some of the components in the figure are filled with shading or patterns so as to be clearly distinguished from other adjacent components.

[0020] As shown in FIG. 1, a conventional IPM package 100 includes a mounting substrate 11 and a lead frame 13. A power die 111 and a cooperating device die 113 that cooperates with the power die are attached to the mounting substrate 11. The mounting substrate 111 can be, for example, a DBC substrate to provide good heat dissipation. The DBC substrate may include a ceramic layer 101 and metal layers on both sides of the ceramic layer. The metal layer 103 on the ceramic layer 101 is shown in the figure. The metal layer can be formed of, for example, copper or a copper alloy. The power die 111 and the cooperating device die 113 are attached to and electrically coupled to the metal layer 103.

[0021] The power die 111 may be provided with a power device (not shown), such as, but not limited to, an insulated gate bipolar transistor (IGBT). The cooperating device die 113 may be provided with a cooperating device (not shown) that cooperates with the power device, such as, but not limited to, a diode coupled in anti-parallel with the IGBT (also known as a free-wheeling diode). As an example, three power dies 111 and three corresponding cooperating device dies 11 are shown in the figure. The cooperating device can be electrically coupled to the power die (power device) through, for example, a wire 115 to form a circuit.

[0022] The IMP package 100 can be divided into a power side (or power domain) and a control side (or control domain). Generally, a high voltage and a large current are supplied to the power side, and a low voltage and a low current are supplied to the control side. The power devices and their cooperating devices are generally provided on the power side. A controller for controlling the power devices is usually provided on the control side.

[0023] The lead frame 13 may contain metal, or in other words, may be in the form of metal. For example, the metal can be a copper alloy including, but not limited to, binary, ternary, and quaternary copper-based alloys. The lead frame 13 may include a plurality of distinct components. As shown in FIG. 1, the lead frame 13 includes leads 131 and 133. As shown in the figure, the lead 131 is attached to the metal layer 103 of the mounting substrate 101. The lead 133 is electrically coupled to the respective power die 111 and the cooperating device die 113 via wires 115.

[0024] The lead frame 13 may further include a die attachment portion 135 provided with a controller chip 139. The controller chip 139 may provide a control signal to the power die 111 through a wire 141. The lead frame 13 may also include a lead 137 for electrically and physically coupling the controller chip 139 to the outside.

[0025] In conventional designs, both the IGBT and the diode are mounted on a DBC substrate to enhance their heat dissipation. Also, the DBC substrate occupies a significant portion (up to 45% in some cases) of the material cost of the IPM package and is a major factor affecting the cost of the IPM package.

[0026] The inventors of the present disclosure have found through their research that in an IPM package, heat is mainly generated by power devices. Therefore, the inventors of the present application have proposed the invention disclosed herein through their research. According to embodiments of the present disclosure, the cost of the IPM package can be significantly reduced while still meeting the heat dissipation requirements. According to embodiments of the present disclosure, one or more of the above problems related to conventional IPM packages can be overcome. According to embodiments of the present disclosure, the layout design of the DBC substrate can also be simplified.

[0027] FIG. 2 shows a schematic diagram of a package according to some embodiments of the present disclosure. FIG. 2 shows a top view of some components of the package (here, some components on the power side). Note that in FIG. 2 and other top views, a shadow or pattern is added to some components to more clearly distinguish them from other components.

[0028] As shown in FIG. 2, the package 200 may include a mounting substrate 21 and a lead frame 23. At least one power die 211 is attached to the first surface (2011 in FIG. 7) of the mounting substrate. Preferably, the mounting substrate 21 is a multilayer substrate. As an example, the mounting substrate 21 may include one of a DBC substrate, a Direct Plated Copper (DPC) substrate, an Active Metal Braze (AMB) substrate, a Direct Bonding Aluminum (DBA) substrate, or an insulated metal substrate. As an example, in the embodiment of FIG. 2, a DBC substrate is used as an example. The mounting substrate 21 may include a first metal layer 203, a second metal layer 207 (see FIG. 7), and an insulating layer 201 sandwiched between the first metal layer and the second metal layer. In a DBC substrate, the insulating layer 201 may be formed of a ceramic material, and the metal layers 203 and 207 may be formed of copper. In other embodiments, the metal layers of the mounting substrate may be formed of, for example, copper or aluminum.

[0029] The first metal layer 203 on the ceramic layer 201 may have one or more regions. Here, as an example, FIG. 2 shows two regions 203_1 and 203_2, and one or more power dies 211 are provided on each of them. As shown in the figure, three power dies 211 are provided on the region 203_1 of the first metal layer, and one power die 211 is provided on the region 203_2. It should be understood that the first metal layer may have more or fewer regions.

[0030] The power die 211 can be attached (and thus electrically coupled) to the surface 2011 (see FIG. 7) of the first metal layer 203 by a solder material. The surface 2011 of the first metal layer 203 is also herein referred to as the first surface of the mounting substrate. The power die can include one or more power devices such as an insulated gate bipolar transistor (IGBT), an injection enhanced gate transistor (IEGT), an integrated gate commutated thyristor (IGCT), a thyristor, and a power Schottky diode, among others.

[0031] The lead frame 23 can include metal or, in other words, the lead frame can be formed from metal. As an example, the metal can include copper such as copper or an alloy containing copper. It should be understood that the present disclosure is not limited thereto. The lead frame 203 can include a first die attachment portion 231 and at least one first lead 235. A cooperating device die 233 is attached to each of the first die attachment portions 231, for example, by soldering using solder. The cooperating device die includes a cooperating device such as a diode that cooperates with the power device. An example will be described where the power device is an IGBT and the cooperating device is a diode. In such a case, the diode can be coupled in anti-parallel to the IGBT. When the IGBT is operating (i.e., when a forward voltage is applied to the IGBT), a large current flows through the IGBT and the freewheeling diode is off (not operating). Thus, heat is mainly generated by the power device (IGBT). When the back electromotive force is large, the diode turns on and conducts current to protect the power device (IGBT). Thus, the amount of heat generated by the cooperating device (diode) is less than the amount of heat generated by the power device (IGBT).

[0032] The first lead 235 is bonded to the first surface of the mounting substrate 21 (here, the upper surface 2011 of the metal layer 203) and is electrically coupled to the power die. The first lead 235 may protrude and extend outward from the edge of the first die attachment portion 231. Preferably, the edge of the first lead 235 is straight. The adjacent edges of the adjacent first leads 235 are configured to be straight and parallel to each other, and the gap between the adjacent edges is configured to have the same width. Preferably, the first lead 235 may be bonded to the mounting substrate 21 by laser or ultrasonic bonding, thereby improving the bonding reliability. FIG. 2 shows six first leads 235 bonded to the region 203_1 of the first metal layer and two first leads 235 bonded to the region 203_2 of the first metal layer. However, this is merely illustrative, and there may be more or fewer leads. In some embodiments, the lead frame 23 may also include additional leads, such as leads (second leads) 237 for electrical connection to other components of the package and / or external components.

[0033] As shown in the figure, the plurality of first leads 235 are provided at the edge of the lead frame 23 facing the power die and are evenly distributed along that edge. Accordingly, the first leads are also evenly distributed on the mounting substrate 21 (specifically, on its metal layer 203). In this way, when the lead frame 23 is bonded to the mounting substrate 21, the mounting substrate 21 can receive stress uniformly, and thus the possibility of the mounting substrate 21 being displaced or tilted is reduced, thereby improving or even eliminating the overflow of the mold compound onto the back surface of the DBC substrate.

[0034] Furthermore, as shown in FIG. 2, the lead frame 23 may have a plurality of parts positioned separately from each other. As an example, FIG. 2 shows parts 23_1, parts 23_2, and a plurality of other parts 23_3. It should be understood that this is merely illustrative. For example, the lead frame 23 may have only part 23_1 or part 23_2, or may have more parts. As shown in the figure, part 23_1 includes a die attachment portion 231, a first lead 235, and a second lead 237. Preferably, the die attachment portion 231 and each of the first lead 235 and the second lead 237 are integrally formed. Part 23_2 is shown as being separate from part 23_1 and includes the die attachment portion 231, the first lead 235, and additional leads (the second lead 237) for electrical connection to external and / or other parts. In addition, FIG. 2 also shows other parts such as part 23_3 which may include additional leads 239. Here, only the portion of part 23_3 that includes the lead (the third lead) 239 is illustrated. However, it should be understood that part 23_3 may also include other parts such as a die attachment portion and / or a first lead arranged in the same or similar manner as parts 23_1 and 23_2.

[0035] Here, the second lead 237 and the third lead 239 are shown and described as being used for electrical connection to the outside in this embodiment, but it should also be understood that the present disclosure is not limited thereto. For example, in other embodiments, the second lead 237 and the third lead 239 may not be electrically coupled to the outside. Furthermore, it should be understood that the configurations of the first, second, and third leads may be changed, and the positions, dimensions, shapes, numbers, etc. shown in the figure are merely illustrative.

[0036] As shown in the figure, wire (first wire) 251 is bonded to power die 211 and collaborative device die 233 to provide an electrical connection therebetween. Although not shown, it will be readily understood by those skilled in the art that dies (such as power dies, collaborative device dies, and controller chips described below) can be provided with bond pads, and sections of the wire can be bonded to the bond pads to provide mechanical and electrical coupling. Preferably, wire 251 is an aluminum wire. However, the present disclosure is not limited thereto. For example, a copper wire can be used. As an example, the electrodes of an IGBT die (functioning as a power die) can be electrically coupled to the metal layer 203 (or a portion thereof) of the DBC substrate 21, and the electrodes of a diode die (functioning as a collaborative device die) can be electrically coupled to the lead frame 23 (or a part thereof such as 23_1), such that both the IGBT die and the diode die are electrically coupled to each other via a first lead. One end of wire 251 can be electrically coupled to another electrode of the IGBT die, and the other end of wire 251 can be electrically coupled to another electrode of the diode die, thereby forming an electrical connection therebetween. Optionally, wire 251 can be further bonded to a corresponding second lead or other parts / components as shown in FIG. 2. It should also be understood that although two wires 251 are shown for each power die in the figure, the present disclosure is not limited thereto.

[0037] In a package, an implementation substrate such as a DBC substrate has excellent heat dissipation performance but is expensive and constitutes a significant portion of the cost of an IPM package. In a package, the heat dissipation performance of a lead frame may be lower than that of an implementation substrate due to encapsulation with a mold compound. In the applications of IPM packages and power devices, heat has a significant impact on the performance of the power device and even on the entire package. Therefore, heat dissipation is an important aspect to be considered. In the prior art, in order to meet the heat dissipation requirements, there has always been a tendency to place power-side electronic components on an implementation substrate (such as a DBC substrate) with better heat dissipation. The higher the voltage and current that a power device can withstand, the more necessary this is.

[0038] After performing a detailed analysis of the heat dissipation of the parts / components of an IPM package in the related art, it was recognized that the collaborative device die can be placed on the lead frame while still meeting the heat dissipation requirements. Thereby, the usage area of expensive implementation substrates such as DBC substrates can be significantly reduced, and thereby the cost of the package can be significantly reduced. In some examples, the size of the DBC substrate can be reduced by up to 45.9%, resulting in a significant reduction in the packaging cost of the package module while maintaining consistent heat dissipation of the packaged product.

[0039] For example, the size of the DBC substrate can be 29 mm × 12 mm × 0.98 mm, the thickness of the lead frame can be 0.38 mm, the size of the IGBT die can be 2.5 mm × (2.5 mm to 3.5 mm) × 4.8 mm, and the size of the diode die can be 2.2 mm × 2.2 mm. According to the embodiments of the present disclosure, not only is the area of the DBC substrate occupied by the diode die removed, but the IGBT die can be made as close as possible to the first lead.

[0040] In addition, by removing the power-side collaborative device die from the mounting substrate, the layout design of the mounting substrate becomes more flexible and easier. Furthermore, since the layout of the mounting substrate is simplified, the first leads can be designed to be smaller and more evenly distributed, making the leads (and lead frame) suitable for bonding to the mounting substrate by ultrasonic or laser welding, reducing the bonding failure rate between the lead frame and the mounting substrate, and improving product reliability.

[0041] In addition, compared with the prior art, in the embodiments of the present disclosure, the leads are more evenly distributed on the mounting substrate (e.g., DBC substrate), thereby reducing or eliminating the problem of overflow of the mold compound to the back surface of the DBC.

[0042] FIG. 3 shows a schematic top view of some parts / components of a package (here, some power-side parts / components and some control-side parts / components) according to some embodiments of the present disclosure. The package 300 shown in FIG. 3 essentially includes all the parts of the package 200 shown in FIG. 2. In addition, the package 300 further includes some control-side parts. As shown in FIG. 3, the lead frame 23 may also include additional parts 23_5 for the control side that are positioned separately from other parts 23_1, 23_2, 23_3, etc. The part 23_5 of the lead frame may include an additional die attachment portion (second die attachment portion) 301 and additional leads (fourth leads) 331. The die attachment portion (second die attachment portion) 301 is also correspondingly positioned separately from the first die attachment portion 231 and the first leads 235 of the parts 23_1 and 23_2, respectively.

[0043] The controller chip 303 is provided on the die attachment portion 301 and is electrically coupled to the power die through a wire (second wire) 311. Thus, the controller chip 303 can provide signals to the power die, for example, to control the operation of an associated power device. As an example, FIG. 3 illustrates two die attachment parts 301 and two controller chips 303. Preferably, the wire 311 is a copper wire.

[0044] It should be understood that the configuration of the part 23_5 shown in FIG. 3 is merely illustrative and the present disclosure is not limited thereto. It should also be understood that the configuration of the third lead 331 can be changed. FIG. 3 shows different configurations of the third lead 331. Some leads 331 can communicate with the die attachment portion 301, while the remaining leads 331 can be separated from the die attachment portion 301. The control die 303 can be electrically coupled to the corresponding separated lead through other wires (not shown in FIG. 3, for example, the wire 601 in FIG. 6).

[0045] Those skilled in the art will readily understand this in some intermediate products or intermediate manufacturing processes. One or more of the above parts 23_1, 23_2, 23_3, 23_5 of the lead frame 23 can be coupled to each other, for example, by a tie bar (not shown). The tie bar can be removed after applying the mold compound, thereby separating the above parts from each other.

[0046] Figure 4 shows a schematic top view of a package according to some embodiments of the present disclosure. The package shown in Figure 4 essentially includes all the parts of the package 300 shown in Figure 3. The package further includes a mold compound 401. The mold compound 401 encapsulates at least a portion of the mounting substrate 21, the power die 211, the cooperating device die 233, the first wire 251, and at least a portion of the lead frame 23. In some embodiments, when a DBC substrate is used as the mounting substrate 21, the mold compound may be configured to expose a second surface (2071 in Figure 6 or Figure 7) of the mounting substrate 21 on the opposite side of the first surface.

[0047] Figure 5 shows a perspective simulation view of a package according to some embodiments of the present disclosure to assist in understanding the planar top view described above. Elements in Figure 5 that are the same as those in the previous figure are labeled with the same reference numerals as in the previous figure and will not be described repeatedly here.

[0048] Figure 6 shows a schematic cross-sectional view of a package according to some embodiments of the present disclosure. Elements in Figure 6 that are the same as those in the previous figure are labeled with the same reference numerals as in the previous figure and will not be described repeatedly here. In the embodiment shown in Figure 6, the first die attachment portion 231 is arranged to be substantially flush with the first lead 235, while the second lead 237 / the third lead 239 is arranged higher than the corresponding first die attachment portion 231. The leads 237 / 239 are arranged to be substantially flush with the opposite leads 331. In this way, the height of the cooperating device die can be reduced (e.g., with respect to the bottom surface of the package), leaving sufficient space for forming the wire 251 thereon. Further, the lead configuration can be maintained the same as that of prior art packages.

[0049] In addition, since the first wire 251 protrudes above the mounting substrate 21 and the lead frame 23, the thickness of the mold compound and the height of the first wire should be selected to ensure that the mold compound is sufficient to cover the first wire (as well as other wires).

[0050] FIG. 7 shows a schematic cross-sectional view of a package according to another embodiment of the present disclosure. Elements in FIG. 7 that are the same as those in the previous figure are labeled with the same reference numerals as in the previous figure and will not be described repeatedly here. In the embodiment shown in FIG. 7, the first die attachment portion 231 is further lowered and configured to be lower than the first lead 235, while the leads 237 / 239 are configured to be higher than both the first die attachment portion 231 and the first lead 235. In this way, the height of the lead 251 can be further reduced, and accordingly, the height (thickness) of the mold compound can be reduced. On the other hand, the cooperating device die 233 can be located closer to the bottom surface of the package, thereby improving the heat dissipation of the cooperating device die 233.

[0051] As shown in FIGS. 6 and 7, the mounting substrate 21 may also include a second metal layer 207 disposed on an insulating layer (e.g., a ceramic layer) 201 on the side opposite to the first metal layer 203. The first metal layer 203 and the second metal layer 207 are respectively located on both sides of the insulating layer 201. The mold compound 401 may be configured to expose the surface 2071 of the second metal layer 207. The mold compound also encapsulates the second wire 311 and other wires (such as the wire 601 coupled between the control die 303 and the lead 331).

[0052] FIG. 8 shows a flowchart of a method for manufacturing a package according to some embodiments of the present disclosure. As shown in FIG. 8, the method 800 includes, in step S801, attaching a power die to a first surface of a mounting substrate, where the power die includes a power device. For example, the power die 211 can be attached to the first surface 2011 of the mounting substrate 21 by vacuum reflow soldering.

[0053] Method 800 further includes, at step S803, attaching a collaborative device die to a first die attachment portion of a lead frame, the lead frame further comprising at least one first lead. The collaborative device die includes a collaborative device that collaborates with a power device, and in normal operation, the amount of heat generated by the collaborative device is less than the amount of heat of the power device. For example, the collaborative device die 233 can be attached to the first die attachment portion 231 of the lead frame 23 by wire soldering.

[0054] Method 800 further includes, at step S805, attaching the first lead to a first surface of a mounting substrate so as to electrically couple the first lead to a power die. For example, a mechanical support structure can be used to support various parts of the lead frame. For example, a tie bar can be used to couple various parts of the lead frame, or the lead frame can be held by a clip so as to attach the first lead 235 to the first surface 2011 of the mounting substrate 21 by laser or ultrasonic soldering so as to form an electrical connection with the power die 211.

[0055] Method 800 further includes performing wire bonding at step S807. Wire bonding includes bonding a first wire to the power die and the collaborative device die. For example, the first wire 251 can be bonded to the power die 211 and the collaborative device die 233 by aluminum wire bonding so as to provide an electrical connection between the power die 211 and the collaborative device die 233. The first wire can be, for example, an aluminum wire.

[0056] Method 800 further includes applying a mold compound in step S809. For example, as shown in FIGS. 4, 6, and 7, a mold compound 401 is applied to encapsulate at least a portion of the mounting substrate 21, the power die 211, the cooperating device die 233, the first wire 251, and at least a portion of the lead frame 23.

[0057] In some embodiments, after applying the mold compound, the tie bars between parts of the lead frame can be removed.

[0058] In some embodiments, the mounting substrate can include a first metal layer, a second metal layer, and an insulating layer sandwiched between the first and second metal layers. The power die is attached to the surface of the first metal layer that functions as the first surface of the mounting substrate. The lead frame can include a metal such as copper.

[0059] In some embodiments, the lead frame can further include at least one second lead, and at least one first lead, the first die attachment portion, and at least one second lead are integrally formed. In some embodiments, the mold compound is further configured to expose the second surface of the mounting substrate opposite the first surface.

[0060] In some embodiments, the heat dissipation performance of the lead frame is lower than that of the mounting substrate due to encapsulation by the mold compound. In some embodiments, the first die attachment portion is arranged to be substantially flush with the first lead. In other embodiments, the first die attachment portion is arranged lower than the first lead.

[0061] In some embodiments, the lead frame can include two or more first leads disposed on an edge of the lead frame facing at least one power die, and the two or more first leads are arranged to be evenly distributed on the edge.

[0062] In some embodiments, the lead frame further comprises a third lead positioned separately from the second die attachment portion and the second lead, and the first wire is also bonded to the third lead.

[0063] In some embodiments, method 800 may further include, at step S806, attaching a controller chip to the second die attachment portion of the lead frame, the second die attachment portion being positioned separately from the first die attachment portion and the first lead. For example, the controller chip 303 may be attached to the second die attachment portion 301 by adhesive bonding of silver paste.

[0064] There is no particular limitation on the order in which steps S801, S803, and S806 are performed, as long as they are performed before the wire bonding step. For example, steps S801 and S803 may be performed simultaneously, thereby saving processing time. In another example, any one of steps S801, S803, and S806 may be performed before the other two.

[0065] In some embodiments, wire bonding further includes bonding a second wire to the controller chip and the power die. For example, a copper or gold wire (the second wire) 311 may be bonded to the controller chip 301 and the power die 211 by copper or gold wire bonding. The mold compound 401 is further configured to encapsulate the second wire 311.

[0066] The present application also contemplates an electrical system that may include a package according to any embodiment of the present disclosure. As an example, the electrical system may include, for example, an inverter, a new energy vehicle, a wind power system, a solar power generation system, an energy storage system, or any other device or system to which the package of the present disclosure may be applied.

[0067] The present disclosure also contemplates the following items.

[0068] Item 1: A package comprising: a mounting substrate having at least one power die attached to a first surface of the mounting substrate, the power die having a power device; a lead frame having a first die attachment portion and at least one first lead, and at least one cooperating device die having a cooperating device for cooperating with the power device, the at least one cooperating device die being attached to the first die attachment portion, wherein during normal operation, the amount of heat generated by the cooperating device is less than the amount of heat generated by the power device; and at least one first lead being coupled to the first surface of the mounting substrate and electrically coupled to the power die.

[0069] Item 2: The package according to Item 1, wherein the mounting substrate comprises a first metal layer, a second metal layer, and an insulating layer sandwiched between the first and second metal layers, at least one power die being attached to a surface of the first metal layer that functions as the first surface of the mounting substrate, and the lead frame containing metal.

[0070] Item 3: The package according to Item 1, wherein the lead frame further comprises at least one second lead for electrically coupling to the outside of the package, and at least one first lead, the first die attachment portion, and at least one second lead are integrally formed.

[0071] Item 4: The package according to any one of Items 1 to 3, wherein in the package, the heat dissipation performance of the lead frame is lower than that of the mounting substrate.

[0072] Item 5: The package according to Item 1, wherein the package is an IPM package, the mounting substrate comprises one of a DBC substrate, a DPC substrate, an AMB substrate, a DBA substrate, and an IMS substrate, the power device comprises one or more of an IGBT, an IGET, an IGCT, a thyristor, and a power Schottky diode, and the cooperating device comprises a diode.

[0073] Item 6: The package according to item 1, wherein the first die attachment portion is configured to be substantially flush with the first lead or lower than the first lead.

[0074] Item 7: The package according to item 3, wherein at least one second lead is configured to be higher than the first die attachment portion and at least one first lead.

[0075] Item 8: The package according to item 1, further comprising a first wire attached to the power die and the cooperating device die, and a mold compound encapsulating at least a portion of the mounting substrate, the power die, the cooperating device die, the first wire, and at least a portion of the lead frame, wherein the mold compound is configured to expose a second surface of the mounting substrate opposite the first surface.

[0076] Item 9: The package according to item 1, wherein at least one first lead is disposed at an edge of the lead frame facing at least one power die, and comprises two or more first leads, and the two or more first leads are disposed to be evenly distributed at the edge.

[0077] Item 10: The package according to item 8, further comprising a controller chip for controlling the power device, wherein the controller chip is provided on a second die attachment portion of the lead frame and is electrically coupled to the power die via a second wire, the second die attachment portion is positioned separately from the first die attachment portion and at least one first lead, and the mold compound further encapsulates the second wire.

[0078] Item 11: The package according to item 8, wherein the lead frame is positioned separately from the first die attachment portion and the first lead, and further comprises a third lead for electrically coupling to the outside of the package, and the first wire is attached to the third lead.

[0079] Item 12: An electrical system comprising the package according to any one of Items 1 to 11.

[0080] Item 13: A method for manufacturing a package, comprising: attaching a power die having a power device to a first surface of a mounting substrate; attaching a cooperating device die to a first die attachment portion of a lead frame, the lead frame further comprising at least one first lead, the cooperating device die comprising a cooperating device that cooperates with the power device, and the amount of heat generated by the cooperating device during normal operation being less than the amount of heat generated by the power device, attaching the cooperating device die; attaching at least one first lead to the first surface of the mounting substrate so as to be electrically coupled to the power die; performing wire bonding including bonding a first wire to the power device and the cooperating device; and applying a mold compound to encapsulate at least a portion of the mounting substrate, the power die, the cooperating device die, the first wire, and at least a portion of the lead frame.

[0081] Item 14: The method according to Item 13, wherein the mounting substrate comprises a first metal layer, a second metal layer, and an insulating layer sandwiched between the first and second metal layers, at least one power die is attached to the surface of the first metal layer that functions as the first surface of the mounting substrate, the lead frame contains metal, the lead frame further comprises at least one second lead, at least one first lead, the first die attachment portion, and at least one second lead are integrally formed, and the mold compound is configured to expose the second surface of the mounting substrate opposite to the first surface.

[0082] Item 15: The method according to Item 13, wherein the heat dissipation performance of the lead frame is lower than the heat dissipation performance of the mounting substrate when encapsulated by the applied mold compound.

[0083] Item 16: The method according to item 13, wherein the first die attachment portion is configured to be substantially flush with the first lead or lower than the first lead.

[0084] Item 17: The method according to item 13, wherein at least one first lead is disposed at an edge of a lead frame facing at least one power die, and two or more first leads are provided and arranged to be evenly distributed at the edge.

[0085] Item 18: The method according to item 13, wherein the lead frame further comprises a third lead positioned separately from the second die attachment portion and the second lead, the first wire is further bonded to the third lead, the method further includes attaching a controller chip to the second die attachment portion of the lead frame, the second die attachment portion being positioned separately from the first die attachment portion and the first lead, wire bonding further includes bonding a second wire to the controller chip and the power die, and the mold compound further encapsulates the second wire.

[0086] Item 19: The method according to item 13, wherein the package is an IPM package, the implementation substrate comprises one of a DBC substrate, a DPC substrate, an AMB substrate, a DBA substrate, and an IMS substrate, the power device comprises one or more of an IGBT, an IGET, an IGCT, a thyristor, and a power Schottky diode, and the cooperating device comprises a diode.

[0087] One skilled in the art will recognize that the boundaries between the operations (or steps) described above are merely illustrative. Multiple operations may be combined into a single operation, a single operation may be distributed among additional operations, and the execution of operations may overlap at least partially in time. Further, alternative embodiments may include multiple instances of a particular operation, and the order of operations may be changed in other embodiments. Rather, other modifications, changes, and substitutions are also possible. Accordingly, the specification and drawings are to be regarded as illustrative rather than restrictive.

[0088] Although some specific embodiments of the present disclosure have been described in detail by way of example, one skilled in the art should understand that the above examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The various embodiments disclosed herein may be arbitrarily combined without departing from the spirit and scope of the present disclosure. One skilled in the art should also understand that modifications may be made to the embodiments without departing from the scope and spirit of the present disclosure. The scope of the present disclosure is defined by the following claims.

Claims

1. A mounting substrate having at least one power die attached to a first surface of the mounting substrate, the power die having a power device, and A lead frame having a first die attachment portion and at least one first lead, and at least one cooperating device die having a cooperating device for cooperating with the power device, attached to the first die attachment portion, wherein during normal operation, the amount of heat generated by the cooperating device is less than the amount of heat generated by the power device, Comprising A package, wherein the at least one first lead is coupled to the first surface of the mounting substrate so as to be electrically coupled to the power die.

2. The package according to claim 1, wherein the mounting substrate comprises a first metal layer, a second metal layer, and an insulating layer sandwiched between the first and second metal layers, the at least one power die being attached to a surface of the first metal layer that functions as the first surface of the mounting substrate, and the lead frame comprising metal.

3. The lead frame further comprises at least one second lead for electrically coupling to the outside of the package, The package according to claim 1, wherein the at least one first lead, the first die attachment portion, and the at least one second lead are integrally formed.

4. The package according to claim 1, wherein in the package, the heat dissipation performance of the lead frame is lower than the heat dissipation performance of the mounting substrate.

5. The package is an IPM package, the mounting substrate comprises one of a DBC substrate, a DPC substrate, an AMB substrate, a DBA substrate, and an IMS substrate, the power device comprises one or more of an IGBT, an IGET, an IGCT, a thyristor, and a power Schottky diode, and the cooperating device comprises a diode.

6. The first die attachment portion is Substantially flush with the at least one first lead, or Lower than the at least one first lead, The package according to claim 1, configured as such.

7. The package according to claim 3, wherein the at least one second lead is configured to be higher than the first die attachment portion and the at least one first lead.

8. a first wire attached to the power die and the collaborative device die; a mold compound further encapsulating at least a portion of the mounting substrate, the power die, the collaborative device die, the first wire, and at least a portion of the lead frame; The package according to claim 1, wherein the mold compound is configured to expose a second surface of the mounting substrate opposite the first surface.

9. The at least one first lead is disposed at an edge of the lead frame facing the at least one power die and comprises two or more first leads; The package according to claim 1, wherein the two or more first leads are arranged to be evenly distributed on the edge.

10. further comprising a controller chip for controlling the power device; The controller chip is provided on a second die attachment portion of the lead frame and is electrically coupled to the power die via a second wire, the second die attachment portion being positioned separately from the first die attachment portion and the at least one first lead; The mold compound further encapsulates the second wire. The package according to claim 8.

11. The lead frame is positioned separately from the first die attachment portion and the at least one first lead and further comprises a third lead for electrically coupling to the outside of the package, the first wire being attached to the third lead. The package according to claim 8.

12. An electrical system comprising the package according to claim 1.

13. A method for manufacturing a package, comprising: attaching a power die comprising a power device to a first surface of a mounting substrate; Attaching a collaborative device die to a first die attachment portion of a lead frame, wherein the lead frame further comprises at least one first lead, the collaborative device die comprises a collaborative device that collaborates with the power device, and during normal operation, the amount of heat generated by the collaborative device is less than the amount of heat generated by the power device, attaching the collaborative device die; Attaching the at least one first lead to a first surface of the mounting substrate so as to be electrically coupled to the power die; Performing wire bonding, including bonding a first wire to the power device and the collaborative device; Applying a mold compound to encapsulate at least a portion of the mounting substrate, the power die, the collaborative device die, the first wire, and at least a portion of the lead frame; A method comprising.

14. The mounting substrate comprises a first metal layer, a second metal layer, and an insulating layer sandwiched between the first and second metal layers, and the at least one power die is attached to a surface of the first metal layer that functions as a first surface of the mounting substrate; The lead frame contains metal; The lead frame further comprises at least one second lead, and the at least one first lead, the first die attachment portion, and the at least one second lead are integrally formed; The method according to claim 13, wherein the mold compound is configured to expose a second surface of the mounting substrate opposite to the first surface.

15. The method according to claim 13, wherein when the lead frame is encapsulated by the applied mold compound, it has a heat dissipation performance lower than that of the mounting substrate.

16. The first die attachment portion is substantially flush with the at least one first lead, or lower than the at least one first lead, configured as such. The method according to claim 13.

17. The at least one first lead is disposed at an edge of the lead frame facing the at least one power die and comprises two or more first leads. The method according to claim 13, wherein the two or more first leads are arranged to be evenly distributed on the edge.

18. The lead frame further comprises a third lead positioned separately from the second die attachment portion and the second lead, the first wire is further bonded to the third lead, and the method comprises attaching a controller chip to the second die attachment portion of the lead frame, the second die attachment portion being positioned separately from the first die attachment portion and the at least one first lead, further including attaching the controller chip, the wire bonding further includes bonding a second wire to the controller chip and the power die, The method according to claim 13, wherein the molding compound further encapsulates the second wire.

19. The package is an IPM package, the mounting substrate comprises one of a DBC substrate, a DPC substrate, an AMB substrate, a DBA substrate, and an IMS substrate, the power device comprises one or more of an IGBT, an IGET, an IGCT, a thyristor, a power Schottky diode, The method according to claim 13, wherein the cooperating device comprises a diode.

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