Evaporation source for organic material, and organic material evaporation device

Abstract

To make vapor of an organic material from an evaporation source enter vertically to a substrate, in a technique for increasing an amount of vapor of the organic material in a tapered manner using a rotation center axis of the substrate as a reference.SOLUTION: An organic material evaporation device 1 has: plural evaporation parts 20, 30 arranged in a vacuum tank, housing different kinds of organic materials, and heating and evaporating the organic material with heating coils 23, 33; and an emission part 60 having a mixture chamber 77 arranged in the vacuum tank, having a container shape, formed by partitioning the container, and mixing the organic material evaporated at plural evaporation parts, a retention chamber 76 formed by partitioning the container and retaining the vapor mixed in the mixture chamber, and plural emission ports 81 faced to the retention chamber, and emitting the retained vapor into the vacuum tank. The emission ports are formed at an emission part 80, so that an amount of the vapor of the organic material emitted from the emission ports increases in a tapered manner relative to a two-dimensional position using a predetermined reference position as a reference.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a vaporization source for organic materials and a technology of an organic material vapor deposition apparatus.

Background Art

[0002] Conventionally, a vaporization source for organic materials and an organic material vapor deposition apparatus capable of forming a film with a uniform film thickness distribution on a substrate have been proposed (for example, Patent Document 1).

[0003] This vaporization source for organic materials has a host vaporization source for vaporizing a host material and a dopant vaporization source for vaporizing a dopant material. Here, the host vaporization source and the dopant vaporization source are formed in a diverging shape (sector shape) with respect to the rotation center axis of the substrate, and are respectively arranged in the circumferential direction of the rotation center axis of the substrate so as to be within the projected area of the opposing substrate.

[0004] And a plurality of evaporation ports (outlet ports, discharge ports) for allowing the vapor of the organic material to pass through are formed in the host vaporization source and the dopant vaporization source. In the host vaporization source and the dopant vaporization source, the plurality of evaporation ports are formed so as to be located on a plurality of concentric circles centered on the rotation center axis of the substrate.

[0005] By forming a plurality of evaporation ports in the host vaporization source and the dopant vaporization source in this way, the amount of the vapor of the organic material released from the evaporation ports increases in a diverging manner with respect to the two-dimensional position with reference to the rotation center axis of the substrate. As a result, it is possible to form a film with a uniform film thickness distribution on the substrate.

[0006] In addition, since this vaporization source for organic materials arranges the host vaporization source and the dopant vaporization source facing the substrate and enables film formation on the substrate, the vaporization source is not offset with respect to the substrate like a conventional vaporization source for organic materials, so the usage efficiency of the organic material is high.

[0007] Furthermore, since the vapor of the organic material from the host evaporation source and the dopant evaporation source can enter the substrate almost vertically, the filling rate of the organic material in the pixel of the device can be increased, and the miniaturization of the pixel of the device becomes possible.

[0008] For example, pixels of 2000 - 3000 dpi required for user wearable devices used in AR (Augmented Reality) or VR (Virtual Reality) can also be realized.

Prior Art Documents

Patent Documents

[0009]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0010] In the host evaporation source and the dopant evaporation source of the evaporation source for the organic material described above, the moisture contained in the organic material is also heated and evaporated, but the water vapor increases the internal pressure of the host evaporation source and the dopant evaporation source. When this happens, the flow of the vapor at the evaporation port becomes a viscous flow, and the direction of the vapor released from the evaporation port has various directional components. As a result, it becomes difficult to make the vapor of the organic material from the host evaporation source and the dopant evaporation source enter the substrate vertically.

[0011] An object of the present invention is to enable the vapor of the organic material from the evaporation source to enter the substrate vertically in a technique of increasing the amount of the vapor of the organic material in a fan - shaped manner with respect to the rotation center axis of the substrate.

Means for Solving the Problems

[0012] In order to solve the above problems, a first aspect of the present invention is a plurality of evaporation units disposed in a vacuum chamber, which contain organic materials of different types, heat the organic materials by a first heating means, and evaporate them; an evaporation source for organic materials disposed in the vacuum chamber, having a container shape, a mixing region formed by partitioning the container for mixing the organic materials evaporated by the plurality of evaporation units, a retention region formed by partitioning the container for retaining the vapor mixed in the mixing region, and a discharge unit having a plurality of discharge ports formed facing the retention region for discharging the vapor retained in the retention region into the vacuum chamber. The discharge ports are formed in the discharge unit such that the amount of the vapor of the organic material discharged from the discharge ports increases in a funnel-shaped manner with respect to the two-dimensional position based on a predetermined reference position.

[0013] In a second aspect of the present invention, there are further provided a second heating means for heating the discharge unit, and a connection pipe located between the plurality of evaporation units and the discharge unit for sending the organic materials evaporated by the plurality of evaporation units to the discharge unit. The connection pipe has a third heating means for heating the connection pipe. The first heating means is temperature-controlled based on the evaporation rate of the organic material in each evaporation unit, and the second and third heating means are preferably temperature-controlled so that the vapor of the organic material does not condense in the discharge unit and the connection pipe.

[0014] In a third aspect of the present invention, it is preferable to further include a discharging means for communicating the plurality of evaporation units with the vacuum chamber so that the vapor evaporated by the plurality of evaporation units can be discharged from the plurality of evaporation units into the vacuum chamber.

[0015] In a fourth aspect of the present invention, it is preferable that the ratio of the inner diameter to the height of the discharge port is 5 or more and 20 or less.

[0016] In a fifth aspect of the present invention, it is preferable that the number of the plurality of evaporation units is 2 or more and 4 or less.

[0017] In order to solve the above problems, a sixth aspect of the present invention is an organic material vapor deposition apparatus having an evaporation source for an organic material, and forming an organic EL element or an image sensor element on a Si wafer substrate on which a C-MOS semiconductor is formed using the organic material released from the evaporation source for the organic material.

Advantages of the Invention

[0018] According to the first and sixth aspects of the present invention, the evaporation source for the organic material or the organic material vapor deposition apparatus can separate the internal pressures in the mixing region and the retention region by partitioning the mixing region and the retention region with a container in the discharge portion, and the flow of the vapor in the retention region can be made into the flow in the molecular flow region. Since the evaporation source for the organic material can make the flow of the vapor in the retention region into the flow in the molecular flow region, the flow of the vapor in the discharge port can also be made into the flow in the molecular flow region, and the vapor of the organic material released from the evaporation source for the organic material can be made to enter perpendicularly to the substrate disposed in the vacuum chamber.

[0019] According to the second aspect of the present invention, since the evaporation source for the organic material can control the temperatures in the discharge portion and the connection portion, it can control the flow of the vapor of the organic material in the discharge portion and the connection portion. Further, the evaporation source for the organic material can control the evaporation rate of the organic material in the evaporation portion to a desired rate by individually providing and individually controlling the first to third heating means.

[0020] According to the third aspect of the present invention, the evaporation source for the organic material can prevent the release of water vapor from the discharge port by discharging the water vapor evaporated in each evaporation portion to the vacuum chamber. Thereby, the evaporation source for the organic material can prevent the inclusion of moisture in the film formation and the hydrolysis of the organic material, and the deterioration of the device.

[0021] Furthermore, according to the third aspect of the present invention, when discharging the water vapor evaporated in each evaporation part to the vacuum chamber, since the inside of each evaporation part and the vacuum chamber are in a communicating state, the internal pressure of each evaporation part can also be set to the same degree of vacuum as the vacuum chamber. Thereby, it is possible to prevent the vapor of the organic material flowing in the connection part or the discharge part from being rapidly decompressed and expanded in the connection part or the discharge part, and the flow of the vapor of the organic material in the connection part or the discharge part can be appropriately controlled.

[0022] According to the fourth aspect of the present invention, the evaporation source for the organic material can cause the vapor of the organic material discharged from the discharge port to enter perpendicularly to the substrate.

[0023] According to the fifth aspect of the present invention, the evaporation source for the organic material can realize an evaporation source of so-called one host one dopant or one host two dopants, one host three dopants.

Brief Description of the Drawings

[0024]

Figure 1

Figure 2

Figure 3

Embodiments for Carrying Out the Invention

[0025] Embodiments of the present invention will be described with reference to the drawings. In this embodiment, an organic material vapor deposition apparatus is cited.

[0026] (Configuration) FIG. 1 is a diagram showing an example of the configuration of an organic material vapor deposition apparatus 1.

[0027] As shown in Fig. 1, the organic material vapor deposition apparatus 1 has an evaporation section 10 and a vapor deposition section 200. The evaporation section 10 and the vapor deposition section 200 are arranged in a vacuum chamber 2. In the vacuum chamber 2, the evaporation section 10 is arranged at the lower part and the vapor deposition section 200 is arranged at the upper part. The vacuum chamber 2 can be evacuated to a vacuum degree of 10 -5 (Pa) by a vacuum evacuation device (not shown) provided outside the vacuum chamber 2.

[0028] The evaporation section 10 has a host evaporation source 20, a dopant evaporation source 30, first and second connection sections 40, 50, and a discharge section (ejection section) 60. In the evaporation section 10, the host evaporation source 20, the dopant evaporation source 30, the first and second connection sections 40, 50, and the discharge section 60 are arranged upward in this order.

[0029] The host evaporation source 20 and the dopant evaporation source 30 are arranged adjacent to each other in the horizontal direction. The discharge section 60 is arranged above the host evaporation source 20 and the dopant evaporation source 30, and the host evaporation source 20 and the dopant evaporation source 30 are connected to the discharge section 60 by the first and second connection sections 40, 50.

[0030] The host evaporation source 20 is an evaporation source for evaporating an organic host material (evaporation material) 500. The host evaporation source 20 houses a cylindrical first evaporation container (crucible) 21 made of graphite in a first housing section 22 with an open upper end. The first evaporation container 21 is filled with the host material 500. Around the first housing section 22, a coil 23 for heating the first evaporation container 21 housed in the first housing section 22 is wound. The coil 23 is applied with an adjustable voltage from a power source (not shown) provided outside the vacuum chamber 2. Thereby, the first evaporation container 21 has its applied voltage to the coil 23 adjusted and is adjusted to a temperature suitable for the evaporation of the host material 500.

[0031] Also, the bottom of the first housing section 22 is insulated by a heat insulating member 24 so that heat is not dissipated from the bottom. Further, a first vertical movement mechanism 25 for moving the first housing section 22 up and down is provided at the bottom of the first housing section 22.

[0032] The dopant evaporation source 30 is an evaporation source for evaporating an organic dopant material (evaporation material) 600. The basic configuration of the dopant evaporation source 30 is the same as that of the host evaporation source 20. That is, the dopant evaporation source 30 houses a cylindrical second evaporation container (crucible) 31 made of graphite in a second housing portion 32 with an open upper end. The second evaporation container 31 is filled with the dopant material 600. However, the second housing portion 32 and the second evaporation container 31 are smaller in diameter and size than the first housing portion 22 and the first evaporation container 21. A coil 33 for heating the second evaporation container 31 housed in the second housing portion 32 is wound around the periphery of the second housing portion 32. The coil 33 is applied with an adjustable voltage from a power source (not shown) provided outside the vacuum chamber 2. Thereby, the second evaporation container 31 is adjusted to a temperature suitable for the evaporation of the dopant material 600 by adjusting the voltage applied to the coil 33.

[0033] Also, the bottom of the second housing portion 32 is insulated by a heat insulating member 34 so as not to radiate heat from the bottom. Further, a second vertical movement mechanism 35 for moving the second evaporation container 31 up and down is provided at the bottom of the second housing portion 32.

[0034] The first connection portion 40 is composed of a pipe connecting the host evaporation source 20 and the discharge portion 60. The host material evaporated by the host evaporation source 20 is sent to the discharge portion 60 by the first connection portion 40.

[0035] The first housing portion 22 of the host evaporation source 20 is moved up and down by the first vertical movement mechanism 25 and is made separable from and connectable to the first connection portion 40. In a state where the upper end portion 22a of the first housing portion 22 and the lower end portion 40a of the first connection portion 40 are in contact, the inside of the first housing portion 22, the inside of the first evaporation container 21, and the inside of the first connection portion 40 are kept in a state of being blocked from the outside (vacuum chamber 2). On the other hand, the upper end portion 40b of the first connection portion 40 is constantly connected to the discharge portion 60.

[0036] The first connection part 40 includes a circular tube part 41, a heating coil 42 wound along the outer periphery of the circular tube part 41, and a circular tube-shaped heat insulation part 43 that houses the circular tube part 41 and the coil 42. The circular tube part 41 is made of, for example, SUS or aluminum. A voltage that can be adjusted is applied to the coil 42 from a power source (not shown) provided outside the vacuum chamber 2. As a result, in the first connection part 40, the voltage applied to the coil 42 is adjusted, and the temperature is adjusted.

[0037] Also, the second connection part 50 is composed of a pipe that connects the dopant evaporation source 30 and the discharge part 60. The dopant material evaporated by the dopant evaporation source 30 is sent to the discharge part 60 by the second connection part 50.

[0038] The second housing part 32 of the dopant evaporation source 30 is moved up and down by the second vertical movement mechanism 35 and can be connected to and disconnected from the second connection part 50. In a state where the upper end part 32a of the second housing part 32 and the lower end part 50a of the second connection part 50 are in contact, the inside of the second housing part 32 and the inside of the second evaporation container 31 and the inside of the second connection part 50 are kept in a state of being blocked from the outside (vacuum chamber 2). On the other hand, the upper end part 50b of the second connection part 50 is constantly connected to the discharge part 60.

[0039] Similar to the first connection part 40, the second connection part 50 includes a circular tube part 51, a heating coil 52 wound along the outer periphery of the circular tube part 51, and a circular tube-shaped heat insulation part 53 that houses the circular tube part 51 and the coil 52. The circular tube part 51 is made of, for example, SUS or aluminum. A voltage is applied to the coil 52 from a power source (not shown) provided outside the vacuum chamber 2. As a result, in the second connection part 50, the voltage applied to the coil 52 is adjusted, and the temperature is adjusted.

[0040] The discharge part 60 includes a main body part 70, a discharge plate (discharge plate) 80, and first and second dispersion plates 90, 100.

[0041] The main body portion 70 has a substantially container shape with a disk shape. The main body portion 70 is made of, for example, SUS or aluminum. Circular first to third groove portions 71, 72, 73 are formed in the vertical direction on the inner peripheral surface of the main body portion 70, and it has a bottomed shape with a bottom portion 70a. The main body portion 70 has a heating coil 74 wound along the outer periphery of the main body portion 70 and a heat insulating portion 75 made of a heat insulating material that houses the main body portion 70 and the coil 74.

[0042] The first groove portion 71 is formed at the upper end of the main body portion 70. The second groove portion 72 has a diameter smaller than that of the first groove portion 71 and is concentric with the first groove portion 71 and is formed below the first groove portion 71. The third groove portion 73 has a diameter smaller than that of the second groove portion 72 and is concentric with the first and second groove portions 72 and is formed below the second groove portion 72.

[0043] The discharge plate 80 has a flat disk shape and is attached to the upper end of the main body portion 70 so as to close the first groove portion 71 of the main body portion 70. The diameter of the discharge plate 80 is approximately the same as the diameter of the substrate 700 attached to the vapor deposition portion 200. The discharge plate 80 is made of, for example, SUS or aluminum. A plurality of discharge ports 81 penetrating in the thickness direction of the discharge plate 80 are formed in the discharge plate 80.

[0044] FIG. 2 is a diagram showing an example of the formation of a plurality of discharge ports 81 in the discharge plate 80.

[0045] As shown in FIG. 2, the plurality of discharge ports 81 are arranged along a plurality of concentric circles 80a with different diameters centered on the central axis of the discharge plate 80 or the central axis of the substrate 700 facing the discharge plate 80, and are arranged in a tapered shape toward the radial direction of the discharge plate 80. As a result, the number of the plurality of discharge ports 81 increases as it approaches the outer peripheral side of the discharge plate 80. By increasing the number of discharge ports 81 as it approaches the outer peripheral side of the discharge plate 80 in this way, it is possible to deposit an organic material with a uniform thickness in the radial direction of the substrate 700 on the substrate 700 that is rotationally operated in the vapor deposition portion 200.

[0046] Here, the diameter of the discharge port 81 is, for example, about 1 to 3 (mm), but it goes without saying that it is not limited to this value. This discharge port 81 is an orifice and is designed to have a predetermined aspect ratio. For example, depending on the type of organic material, etc., the diameter and length (height, thickness) of the discharge port 81 are designed so that the aspect ratio is 1 to 20, preferably 5 to 20. Incidentally, if the length of the discharge port 81 is too long, the evaporated organic material is likely to clog inside the discharge port 81, and the flow of the evaporated organic material inside the discharge port 81 cannot be maintained as a molecular flow. If the length of the discharge port 81 is too short, the flow of the evaporated organic material inside the discharge port 81 can be maintained as a molecular flow, but the incident angle of the evaporated organic material discharged from the discharge port 81 becomes large.

[0047] The first dispersion plate 90 has a flat disk shape and is attached to the lower end of the first groove portion 71 so as to close the second groove portion 72 of the main body portion 70. The first dispersion plate 90 is made of, for example, SUS or aluminum. The space portion closed in the first groove portion 71 by the discharge plate 80 and the first dispersion plate 90 forms a retention chamber (retention region) 76. A through hole 91 penetrating in the thickness direction is formed at the center of the first dispersion plate 90. The diameter of the through hole 91 is, for example, 5 to 10 (mm).

[0048] The second dispersion plate 100 has the same flat disk shape as the first dispersion plate 90. The second dispersion plate 100 is installed at the lower end of the second groove portion72 so as to close the third groove portion 73. The second dispersion plate 100 is made of, for example, SUS or aluminum. The space portion closed in the second groove portion 72 by the first dispersion plate 90 and the second dispersion plate 100 forms a mixing chamber (mixing region) 77. First and second through holes 101, 102 penetrating in the thickness direction are formed in the second dispersion plate 100. The first through hole 101 is formed in the second dispersion plate 100 so as to coincide with the central axis of the circular tube portion 41 of the first connection portion 40. Also, the second through hole 102 is formed in the second dispersion plate 100 so as to coincide with the central axis of the circular tube portion 51 of the second connection portion 50. The diameters of the first and second through holes 101, 102 are, for example, 5 to 10 (mm).

[0049] On the bottom 70a of the main body 70, first and second connection holes 78 and 79 penetrating the bottom 70a are formed. The first connection hole 78 and the second connection hole 79 are formed at positions 180° apart in the circumferential direction on the bottom 70a. That is, the first connection hole 78 and the second connection hole 79 are formed at positions facing each other via the central axis of the main body 70. And the first connection hole 78 is formed in the bottom 70a of the main body 70 so as to be located directly below, for example, the discharge port 81 formed in the discharge plate 80. The first connection part 40 is connected to the first connection hole 78, and the second connection part 50 is connected to the second connection hole 79.

[0050] Also, between the bottom 70a of the main body 70 and the second dispersion plate 100, a partition part 110 extending in the diameter direction of the second dispersion plate 100 is provided. The partition part 110 partitions the closed space formed by the bottom 70a of the main body 70 and the second dispersion plate 100 into the side where the first connection hole 78 is formed and the side where the second connection hole 79 is formed. Hereinafter, the compartment on the side where the first connection hole 78 is formed is referred to as the first compartment 111, and the compartment on the side where the second connection hole 79 is formed is referred to as the second compartment 112.

[0051] Also, first and second evaporation rate measurement sensors 121 and 122 are attached to the discharge part 60. The first evaporation rate measurement sensor 121 is inserted from the outside through the discharge plate 80 and the first and second dispersion plates 90 and 100, and its measurement part faces into the first compartment 111. The first evaporation rate measurement sensor 121 measures the evaporation rate of the host material evaporated by the host evaporation source 20. Also, the second evaporation rate measurement sensor 122 is also inserted from the outside through the discharge plate 80 and the first and second dispersion plates 90 and 100, and its measurement part faces into the second compartment 112. The second evaporation rate measurement sensor 122 measures the evaporation rate of the dopant material evaporated by the dopant evaporation source 30. Note that the first evaporation rate measurement sensor 121 is provided in the discharge part 60 avoiding the discharge port 81.

[0052] Further, the emission part 60 is covered with a heat insulating member 120 from the upper surface to the side surface of the main body part 70, and further, the outer periphery of the heat insulating member 120 is covered with a cooling part 130. The heat insulating member 120 and the cooling part 130 have an opening at a portion corresponding to the discharge port 81 formed in the discharge plate 80. The heat insulating member 120 mainly maintains the temperature of the heated emission part 60, and the cooling part 130 mainly prevents the heat of the heated emission part 60 from being transmitted to the vapor deposition part 200. Due to this cooling part 130, the temperature of the substrate 700 is maintained at a predetermined temperature.

[0053] A shutter 140 is provided above the main body part 70. The shutter 140 has a plate shape and is located above the openings of the heat insulating member 120 and the cooling part 130, and opens and closes the discharge port 81 of the emission part 60 with respect to the vapor deposition part 200. The shutter 140 is rotationally operated at a predetermined timing by a shutter opening / closing operation mechanism (not shown) to open and close the discharge port 81. By the opening / closing operation of this shutter 140, the film thickness deposited on the substrate 700 can be controlled, and further, the heat of the emission part 60 can be prevented from being inadvertently transmitted to the vapor deposition part 200.

[0054] The vapor deposition part 200 has a rotation operation mechanism 210 for operating the substrate 700 and the mask 220 and an alignment mechanism (not shown). The rotation operation mechanism 210 is composed of a mechanism for rotating the substrate 700. The rotation operation mechanism 210 has a disk-shaped substrate holder 211, and rotates the substrate holder 211 to rotationally operate the substrate 700 attached to the substrate holder 211. Here, the rotation center of the substrate holder 211, that is, the rotation center of the substrate 700, coincides with the central axis of the discharge plate 80. Here, the substrate 700 is, for example, a Si wafer substrate on which a C-MOS semiconductor is formed.

[0055] Further, the alignment mechanism is composed of a mechanism for adjusting the positional relationship between the substrate 700 and the mask 220 disposed below the substrate 700. The mask 220 is held by a mask holder (not shown) of the alignment mechanism, and the mask holder is operated for positioning.

[0056] Near the lateral direction of this vapor deposition unit 200, a film thickness sensor 230 is arranged. The film thickness sensor 230 is a sensor for estimating the thickness of the vapor deposition layer (film formation) deposited on the substrate 700.

[0057] (Operation, function, etc.) An example of the operation and its function, etc. in the organic material vapor deposition apparatus 1 will be described.

[0058] First, in the organic material vapor deposition apparatus 1, the first and second vertical movement mechanisms 25, 35 are driven, and a predetermined gap is formed between the upper end of the host evaporation source 20 (the first accommodating portion 22) and the lower end of the first connection portion 40, and a predetermined gap is formed between the upper end of the dopant evaporation source 30 (the second accommodating portion 32) and the lower end of the second connection portion 50. At this point, the shutter 140 is in a closed state.

[0059] Subsequently, in the organic material vapor deposition apparatus 1, a vacuum exhaust apparatus (not shown) is driven, and the pressure in the vacuum chamber 2 is adjusted to a vacuum pressure of 10 -5 (Pa).

[0060] Subsequently, a voltage is applied to the discharge portion 60 and the coils 74, 42, 52 of the first and second connection portions 40, 50 in the organic material vapor deposition apparatus 1, and the discharge portion 60 and the first and second connection portions 40, 50 are heated to a predetermined temperature. Here, the predetermined temperature is such that the temperatures of the host evaporation source 20 and the dopant evaporation source 30 do not cause the host material of the host evaporation source 20 and the dopant material of the dopant evaporation source 30 to evaporate, but the moisture contained in the host material and the dopant material evaporates. This predetermined temperature is maintained for a predetermined time. That is, the organic material vapor deposition apparatus 1 heats the host material and the dopant material only by the temperature after heating the discharge portion 60 and the first and second connection portions 40, 50 without directly heating the host evaporation source 20 and the dopant evaporation source 30, and evaporates only the moisture contained therein. As a result, the moisture contained in the host material and the dopant material of the host evaporation source 20 and the dopant evaporation source 30 evaporates and is discharged into the vacuum chamber 2 from the above-mentioned gap as water vapor. At this time, the pressure in the vacuum chamber 2 is 10 -5It is confirmed that it is maintained at the vacuum pressure of (Pa).

[0061] Here, FIG. 3 is a diagram showing an example of changes in the temperature A of the evaporation source, the temperature B of the emission plate 80, and the temperature C of the connection part, as well as changes in the evaporation rate D of the organic material. The vertical axis on the left shows the temperature, and the vertical axis on the right shows the evaporation rate. The horizontal axis shows the passage of time. Here, the evaporation source may be either the host evaporation source 20 or the dopant evaporation source 30. For example, let it be the host evaporation source 20. In this case, the connection part becomes the first connection part 40, and the evaporation rate of the organic material is the evaporation rate of the host material measured by the first evaporation rate measurement sensor in the first evaporation chamber 111.

[0062] As shown in FIG. 3, it can be seen that when the emission part 60 and the connection part are heated and the temperatures B and C of the emission plate 80 and the connection pipe increase, the temperature A of the evaporation source also increases accordingly. Thereby, the moisture contained in the organic material of the evaporation source evaporates.

[0063] After heating the emission part 60 and the first and second connection parts 40 and 50 in this way to evaporate moisture from the host material and dopant material of the host evaporation source 20 and the dopant evaporation source 30, the organic material vapor deposition apparatus 1 drives the first and second vertical movement mechanisms 25 and 35. As a result, the upper end part of the host evaporation source 20 (the first housing part 22) and the lower end part of the first connection part 40 are connected so that there is no gap, and the upper end part of the dopant evaporation source 30 (the second housing part 32) and the lower end part of the second connection part 50 are connected so that there is no gap. Thereby, the inside of the first housing part 22, the inside of the first evaporation container 21, and the inside of the first connection part 40 are blocked from the outside (the vacuum chamber 2), and the inside of the second housing part 32, the inside of the second evaporation container 31, and the inside of the second connection part 50 are also blocked from the outside (the vacuum chamber 2).

[0064] Subsequently, in the organic material vapor deposition apparatus 1, voltages are applied to the coils 23 and 33 of the host evaporation source 20 and the dopant evaporation source 30, and the host material and the dopant material are heated to their respective predetermined temperatures at which they evaporate. At this time, since the discharge part 60 and the first and second connection parts 40 and 50 are heated, and the host evaporation source 20 and the dopant evaporation source 30 have already risen in temperature, the organic material vapor deposition apparatus 1 can heat and evaporate the host material and the dopant material while suppressing power consumption compared to the case of heating from room temperature.

[0065] As shown in FIG. 3, it can be seen that when the heating of the evaporation source (temperature A) starts around time a (for example, 150 (min)), the evaporation of the organic material also starts (the evaporation rate D of the organic material starts to increase).

[0066] By the temperature control as described above, the host material and the dopant material evaporated by the host evaporation source 20 and the dopant material are sent to the discharge part 60 via the first and second connection parts 40 and 50. In the discharge part 60, the host material evaporated by the host evaporation source 20 flows into the mixing chamber 77 through the first compartment 111. Also, the dopant material evaporated by the dopant evaporation source 30 flows into the mixing chamber 77 through the second compartment 112. In the mixing chamber 77, the vapor of the host material and the vapor of the dopant material are mixed, and the mixed vapor flows into the retention chamber 76 of the discharge part 60. In the retention chamber 76, the mixed vapor flowing into the mixing chamber 77 is retained.

[0067] Here, in the organic material vapor deposition apparatus 1, the discharge part 60 and the first and second connection parts 40 and 50 are heated, and the temperatures of the discharge part 60 and the first and second connection parts 40 and 50 are higher than the evaporation temperatures of the host evaporation source 20 and the dopant evaporation source 30. Thereby, it is possible to prevent the vapor of the host material and the dopant material from condensing in the discharge part 60 and the first and second connection parts 40 and 50.

[0068] At this time, the organic material vapor deposition apparatus 1 measures the evaporation rates of the host material and the dopant material by the first and second evaporation rate measurement sensors 121 and 122 installed in the first and second evaporation chambers 112, respectively. When the evaporation rate reaches a predetermined evaporation rate, the organic material vapor deposition apparatus 1 rotates the substrate holder 211 at a predetermined rotation speed. At this time, the organic material vapor deposition apparatus 1 controls the heating temperatures of the host evaporation source 20 and the dopant evaporation source 30 by the coils 23 and 33 so that the evaporation rate is maintained at the predetermined evaporation rate by the first and second evaporation rate measurement sensors 121 and 122 installed in the first and second evaporation chambers 112, respectively. Thereafter, the shutter 140 of the organic material vapor deposition apparatus 1 is opened. As a result, the mixed vapor from the discharge port 81 of the discharge plate 80 is discharged to the deposition unit 200 and deposited on the substrate 700 in the deposition unit 200 to form a film.

[0069] Thereafter, when it is determined that the film thickness formed on the substrate 700 has reached a predetermined film thickness by the measurement of the film thickness sensor 230, the shutter 140 of the organic material vapor deposition apparatus 1 is closed to complete the deposition on the substrate 700. As a result, various elements are formed on the substrate 700. The elements are, for example, organic EL elements and image sensor elements that can also be used in AR, VR, etc.

[0070] (Effects, etc.) (1) In the organic material vapor deposition apparatus 1, since the discharge unit 60 is partitioned by the mixing chamber 77 and the retention chamber 76, the internal pressure can be separated between the mixing chamber 77 and the retention chamber 76, and the flow of the vapor in the retention chamber 76 can be made into a flow in the molecular flow region. Since the organic material vapor deposition apparatus 1 can make the flow of the vapor in the retention chamber 76 into a flow in the molecular flow region, the flow of the vapor in the discharge port 81 can also be made into a flow in the molecular flow region, and the vapor of the organic material evaporated from each evaporation source 20, 30 can enter perpendicularly to the substrate 700 disposed in the vacuum chamber 2.

[0071] (2) In the organic material vapor deposition apparatus 1, the discharge port 81 is formed in the discharge section 60 such that the amount of the vapor of the organic material discharged from the discharge port 81 increases in a fan-shaped manner with respect to the two-dimensional position with reference to a predetermined reference position. Therefore, it is possible to form a film with a uniform film thickness distribution on the substrate 700.

[0072] (3) Since the organic material vapor deposition apparatus 1 can control the temperatures inside the discharge section 60 and the first and second connection sections 40 and 50 by the coils 74, 42, and 52, it is possible to control the flow of the vapor of the organic material inside the discharge section 60 and the first and second connection sections 40 and 50. Further, the organic material vapor deposition apparatus 1 includes the host evaporation source 20, the dopant evaporation source 30, the first and second connection sections 40 and 50, and the discharge section 60, each provided with the coils 23, 33, 42, 52, and 74, respectively, and each section 20, 30, 40, 50, and 60 is individually temperature-controlled, so that the evaporation rate of the organic material at the host evaporation source 20 and the dopant evaporation source 30 can be controlled to a desired rate.

[0073] (4) Since the organic material vapor deposition apparatus 1 can secure a certain distance between the discharge section 60 and the host evaporation source 20 and the dopant evaporation source 30 by the first and second connection sections 40 and 50, it is possible to prevent the host evaporation source 20 and the dopant evaporation source 30 located upstream thereof from being inadvertently heated by the heat of the discharge section 60. Further, due to the presence of the first and second connection sections 40 and 50, the organic material vapor deposition apparatus 1 can suppress the vapor of the organic material from one evaporation source from flowing into the other evaporation source by bypassing the discharge section 60, and can prevent the other evaporation source from being inadvertently heated by the vapor of the organic material from one evaporation source. As a result, the organic material vapor deposition apparatus 1 can manage the temperatures of the host evaporation source 20 and the dopant evaporation source 30 at desired temperatures.

[0074] (5) By discharging the water vapor evaporated from the host evaporation source 20 and the dopant evaporation source 30 into the vacuum chamber 2 by the operations of the first and second vertical movement mechanisms 25 and 35, the organic material vapor deposition apparatus 1 can prevent the water vapor from being released from the discharge port 81. Thereby, the organic material vapor deposition apparatus 1 can prevent moisture from being contained in the film formation and the organic material from being hydrolyzed, and the device from deteriorating.

[0075] (6) When discharging the water vapor evaporated from the host evaporation source 20 and the dopant evaporation source 30 into the vacuum chamber 2, the organic material vapor deposition apparatus 1 makes the inside of the accommodation parts 21 and 31 of the host evaporation source 20 and the dopant evaporation source 30 communicate with the vacuum chamber 2, so that the internal pressure of each of the accommodation parts 22 and 32 can be made the same degree of vacuum as that of the vacuum chamber 2. Thereby, it is possible to prevent the vapor of the organic material flowing in the first and second connection parts 40 and 50 and the discharge part 60 from being rapidly decompressed and expanded in the first and second connection parts 40 and 50 and the discharge part 60, and the flow of the vapor of the organic material in the first and second connection parts 40 and 50 and the discharge part 60 can be appropriately controlled.

[0076] (7) The organic material vapor deposition apparatus 1 can make the vapor of the organic material discharged from the discharge port 81 enter perpendicularly to the substrate 700 by having the ratio of the inner diameter to the height of the discharge port be 5 or more and 20 or less.

[0077] In the above-described embodiment, the evaporation part 10 constitutes, for example, an evaporation source for organic materials. Also, the coils 23 and 33 constitute, for example, the first heating means. Also, the coil 74 constitutes, for example, the second heating means. Also, the coils 42 and 52 constitute, for example, the third heating means. Also, the first and second vertical movement mechanisms 25 and 35 constitute, for example, the discharge means.

[0078] (Modifications, etc.) As another example of the above-described embodiment, the organic material vapor deposition apparatus 1 may be configured such that it does not have the first and second connection parts 40 and 50, and the host evaporation source 20, the dopant evaporation source 30, and the discharge part 60 are directly connected.

[0079] Also, as another example of the above-described embodiment, the organic material vapor deposition apparatus 1 can be configured such that the first and second connection portions 40 and 50 and the discharge portion 60 do not have coils.

[0080] Also, as another example of the above-described embodiment, the organic material vapor deposition apparatus 1 can discharge the water vapor of the host evaporation source 20 and the dopant evaporation source 30 into the vacuum chamber 2 by means or configurations other than the first and second vertical movement mechanisms 25 and 35.

[0081] Also, as another example of the above-described embodiment, the number of evaporation units of the organic material vapor deposition apparatus 1 can be three or four in addition to two. Thereby, the organic material vapor deposition apparatus 1 can realize evaporation sources of so-called one host and one dopant, one host and two dopants, or one host and three dopants.

[0082] Also, as another example of the above-described embodiment, the first and second evaporation rate measurement sensors 121 and 122 can have other configurations as long as they can measure the evaporation rate of the organic material.

[0083] Also, in the above-described embodiment, a plurality of evaporation units disposed in the vacuum chamber, accommodating different types of organic materials, heating and evaporating the organic materials by the first heating means; a mixing region disposed in the vacuum chamber, having a container shape, partitioning and forming the container, and mixing the organic materials evaporated by the plurality of evaporation units; a retention region partitioning and forming the container, retaining the vapor mixed in the mixing region; and a discharge portion having a plurality of discharge ports formed facing the retention region and discharging the vapor retained in the retention region into the vacuum chamber. The discharge ports realize an evaporation source for organic materials formed in the discharge portion such that the amount of the vapor of the organic materials discharged from the discharge ports increases in a fan-shaped manner with respect to the two-dimensional position with respect to a predetermined reference position.

[0084] In addition, in the above-described embodiment, an organic material vapor deposition apparatus is realized that forms an organic EL element or an image sensor element on a Si wafer substrate on which a C-MOS semiconductor is formed, using the organic material released from the evaporation source for the organic material.

[0085] Further, although the embodiments of the present invention have been disclosed, it is obvious that those skilled in the art can make changes without departing from the scope of the present invention. It is intended that all such modifications and equivalents be included in the following claims.

Explanation of Reference Numerals

[0086] 1 Organic material vapor deposition apparatus, 2 Vacuum chamber, 10 Evaporation unit, 20 Host evaporation source, 23, 33, 42, 52, 74 Coils, 25, 35 Vertical movement mechanism, 30 Dopant evaporation source, 40, 50 Connection parts, 60 Discharge part, 76 Retention chamber, 77 Mixing chamber, 80 Discharge plate, 81 Discharge port

Claims

1. A plurality of evaporation units disposed in a vacuum chamber, which contain different types of organic materials and heat and evaporate the organic materials by a first heating means; Disposed in the vacuum chamber, having the shape of a container, a mixing region formed by partitioning the container and mixing the organic materials evaporated by the plurality of evaporation units, a retention region formed by partitioning the container and retaining the vapor mixed in the mixing region, and a discharge unit having a plurality of discharge ports formed facing the retention region and discharging the vapor retained in the retention region into the vacuum chamber; The discharge port is an evaporation source for organic materials formed in the discharge unit such that the amount of the vapor of the organic materials discharged from the discharge port increases in a diverging manner with respect to the two-dimensional position based on a predetermined reference position.

2. Further comprising a second heating means for heating the discharge unit, and a connection part which is a pipe positioned between the plurality of evaporation units and the discharge unit and sends the organic materials evaporated by the plurality of evaporation units to the discharge unit, wherein the connection part has a third heating means for heating the connection part; The first heating means is temperature-controlled based on the evaporation rate of the organic materials in each evaporation unit; The second and third heating means are temperature-controlled so that the vapor of the organic materials does not condense in the discharge unit and the connection part. The evaporation source for organic materials according to Claim 1.

3. The evaporation source for organic materials according to Claim 1 or 2, further comprising a discharge means for communicating the plurality of evaporation units with the vacuum chamber and enabling the vapor evaporated by the plurality of evaporation units to be discharged from the plurality of evaporation units into the vacuum chamber.

4. The evaporation source for organic materials according to Claim 1, wherein the ratio of the inner diameter to the height of the discharge port is 5 or more and 20 or less.

5. The evaporation source for organic materials according to Claim 1, wherein the number of the plurality of evaporation units is 2 or more and 4 or less.

6. An organic material vapor deposition apparatus having the evaporation source for organic materials according to any one of Claims 1 to 5, and forming an organic EL element or an image sensor element on a Si wafer substrate on which a C-MOS semiconductor is formed, using the organic materials discharged from the evaporation source for organic materials.

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