Focus ring, substrate processing apparatus including the same, and substrate processing method using the same

Abstract

To provide a focus ring capable of controlling the outflow of heat transfer gas at a constant rate, a substrate processing apparatus including the same, and a substrate processing method using the same.SOLUTION: In a substrate processing apparatus, a focus ring 5 positioned on a stage for supporting and / or securing a substrate includes a ring body 51 having an axis extending in a first direction D1. The ring body includes: an upper surface comprising a first upper surface 51au, a second upper surface 51bu, and a connecting upper surface 51c; an inner surface 51i extending downward from the upper surface; and a lower surface 51b extending outward from a lower end of the inner surface. The inner surface includes a first inner surface 51ai extending downward from the upper surface parallel to the first direction, and a second inner surface 51bi extending downward from a lower end of the first inner surface at a first acute angle relative to the first direction. The lower surface includes a flat surface 51ab perpendicular to the first direction and an inclined surface 51bb extending from the flat surface toward the second inner surface at a second acute angle relative to the first direction.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present invention relates to a focus ring, a substrate processing apparatus including the same, and a substrate processing method using the same, and more particularly, to a focus ring capable of controlling the outflow of a heat transfer gas, a substrate processing apparatus including the same, and a substrate processing method using the same.

Background Art

[0002] Semiconductor elements can be manufactured through various processes. For example, semiconductor elements can be manufactured through a photolithography process, an etching process, a deposition process, etc. on a wafer such as silicon. In such processes, various fluids can be used. For example, plasma can be used in an etching process and / or a deposition process. A focus ring can be used for the control of plasma. In order to control the temperature of the focus ring, a heat transfer gas can be supplied toward the lower surface of the focus ring.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The problem to be solved by the present invention is to provide a focus ring capable of stably controlling the outflow of a heat transfer gas, a substrate processing apparatus including the same, and a substrate processing method using the same.

[0005] The problem to be solved by the present invention is to provide a focus ring capable of improving the yield of an etching process for a substrate, a substrate processing apparatus including the same, and a substrate processing method using the same.

[0006] The problem to be solved by the present invention is to provide a focus ring that is accurate and can be installed quickly, a substrate processing apparatus including the same, and a substrate processing method using the same.

[0007] The problem to be solved by the present invention is not limited to the problems mentioned above, and other problems not mentioned should be clearly understood by those skilled in the art from the following description.

Means for Solving the Problem

[0008] A focus ring according to an embodiment of the present invention for achieving the problem to be solved includes a ring body having an axis extending in a first direction. The ring body includes an upper surface, an inner surface extending downward from the upper surface, and a lower surface extending outward from the lower end of the inner surface. The inner surface includes a first inner surface extending downward from the upper surface so as to be parallel to the first direction, and a second inner surface extending downward from the lower end of the first inner surface and forming a first acute angle with the first direction. The lower surface can include a flat surface perpendicular to the first direction and an inclined surface extending from the flat surface and forming a second acute angle with the first direction and extending toward the second inner surface.

[0009] A substrate processing apparatus according to an embodiment of the present invention for achieving the problem to be solved includes a process chamber providing a process space, a stage in the process chamber, and a focus ring on the stage. The stage includes a chuck body and a chuck electrode in the chuck body. The chuck body provides a gas supply flow path recessed downward from the upper surface of the chuck body. The gas supply flow path includes an outer flow path located below the focus ring. The focus ring includes a ring body. The ring body includes an upper surface, an inner surface extending downward from the upper surface, and a lower surface extending outward from the lower end of the inner surface. The lower surface can include a flat surface parallel to the horizontal direction and an inclined surface extending from the flat surface toward the inner surface and forming an acute angle with the flat surface.

[0010] According to one embodiment of the present invention, there is provided a method for processing a substrate, the method comprising: disposing a focus ring on a stage of a substrate processing apparatus; supplying a gas below the focus ring through the stage; disposing a substrate on the stage; and supplying a process gas into the substrate processing apparatus, wherein the focus ring includes a ring body having an upper surface, an inner surface extending downward from the upper surface, and a lower surface extending outward from a lower end of the inner surface, the lower surface including a flat surface parallel to a horizontal direction and an inclined surface extending from the flat surface toward the inner surface and forming an acute angle with the flat surface; and supplying the gas below the focus ring may include supplying the gas below the inclined surface toward the inclined surface.

[0011] Specific details of other embodiments are included in the detailed description and drawings. Effect of the Invention

[0012] According to the focus ring, the substrate processing apparatus including the focus ring, and the substrate processing method using the focus ring, of the present invention, the outflow of heat transfer gas can be controlled to a constant amount.

[0013] According to the focus ring, the substrate processing apparatus including the same, and the substrate processing method using the same of the present invention, the yield of an etching process can be improved.

[0014] The focus ring, the substrate processing apparatus including the same, and the substrate processing method using the same according to the present invention can be installed accurately and quickly.

[0015] The effects of the present invention are not limited to those mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the following description. [Brief description of the drawings]

[0016] [Figure 1]It is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention. [Diagram 2] It is a cross-sectional view showing a stage and a focus ring according to an embodiment of the present invention. [Diagram 3] It is a cross-sectional view showing an enlarged X region in FIG. 2. [Figure 4] It is an exploded cross-sectional view of FIG. 3. [Figure 5] It is a perspective view showing a stage and a focus ring according to an embodiment of the present invention. [Figure 6] It is a partially cut-away perspective view showing a stage and a focus ring according to an embodiment of the present invention. [Figure 7] It is a perspective view showing a focus ring according to an embodiment of the present invention. [Figure 8] It is a cross-sectional view showing a stage according to an embodiment of the present invention. [Figure 9] It is a plan view showing a stage according to an embodiment of the present invention. [Figure 10] It is a sequence diagram showing a substrate processing method according to an embodiment of the present invention. [Figure 11] It is a drawing showing a substrate processing method according to the sequence diagram of FIG. 10. [Figure 12] It is a drawing showing a substrate processing method according to the sequence diagram of FIG. 10. [Figure 13] It is a drawing showing a substrate processing method according to the sequence diagram of FIG. 10. [Figure 14] It is a drawing showing a substrate processing method according to the sequence diagram of FIG. 10. [Figure 15] It is a drawing showing a substrate processing method according to the sequence diagram of FIG. 10. [Figure 16] It is a drawing showing a substrate processing method according to the sequence diagram of FIG. 10.

Embodiments for Carrying Out the Invention

[0017] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. Throughout the entire text of this specification, the same reference numerals can refer to the same components.

[0018] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.

[0019] Hereinafter, D1 can be referred to as the first direction, D2 intersecting the first direction D1 can be referred to as the second direction, and D3 intersecting each of the first direction D1 and the second direction D2 can be referred to as the third direction. The first direction D1 may be referred to as the vertical direction, or the upward direction. Each of the first direction D1 and the second direction D2 may also be referred to as the horizontal direction.

[0020] Referring to FIG. 1, a substrate processing apparatus SA can be provided. The substrate processing apparatus SA can perform an etching process and / or a deposition process, etc. on a substrate. The term "substrate" as used in this specification can mean a silicon (Si) wafer, but is not limited thereto. The substrate processing apparatus SA can process a substrate using plasma. For this purpose, the substrate processing apparatus SA can generate plasma in various ways. For example, the substrate processing apparatus SA can be a capacitively coupled plasmas (CCP) and / or an inductively coupled plasmas (ICP) equipped apparatus. However, hereinafter, for the sake of convenience, it will be illustrated and described based on CCP. The substrate processing apparatus SA can include a process chamber 1, a stage 7, a focus ring 5, an outer ring 9 (refer to FIG. 2), a shower head 3, a first chucking power applying device 21, a second chucking power applying device 23, an RF power applying device 4, a heat transfer gas supply device 6, a vacuum pump VP, and a gas supply device GS.

[0021] The process chamber 1 can provide a process space 1h. Processes on the substrate can be carried out in the process space 1h. The process space 1h can be separated from the external space. During the progress of the process on the substrate, the process space 1h can be in a substantially vacuum state. The process chamber 1 can have a cylindrical shape, but is not limited thereto.

[0022] The stage 7 can be located within the process chamber 1. That is, the stage 7 can be located within the process space 1h. The stage 7 can support and / or fix the substrate. With the substrate placed on the stage 7, processes on the substrate can be carried out. More details about the stage 7 will be described later.

[0023] The focus ring 5 can be located on the stage 7. That is, the focus ring 5 can be supported by the stage 7. More details about the focus ring 5 will be described later.

[0024] The outer ring 9 (refer to FIG. 2) can be located on the stage 7. The outer ring 9 can surround the focus ring 5. More details about the outer ring 9 will be described later.

[0025] The shower head 3 can be located within the process chamber 1. That is, the shower head 3 can be located within the process space 1h. The shower head 3 can be spaced apart above the stage 7. The gas supplied from the gas supply device GS can be uniformly injected into the process space 1h through the shower head 3.

[0026] The first chucking power application device 21 can apply DC power to the stage 7. By the DC power applied by the first chucking power application device 21, the substrate can be fixed at a certain position on the stage 7. More details about this will be described later.

[0027] The second checking power application device 23 can apply DC power to the stage 7. By the DC power applied by the second checking power application device 23, the focus ring 5 can be fixed at a certain position on the stage 7. The detailed content regarding this will be described later.

[0028] The RF power application device 4 can supply RF power to the stage 7. Thereby, the plasma in the process space 1h can be controlled. The detailed content regarding this will be described later.

[0029] The heat transfer gas supply device 6 can supply gas onto the upper surface of the stage 7. The heat transfer gas supply device 6 can be connected to the stage 7. That is, the heat transfer gas supply device 6 can supply gas onto the upper surface of the stage 7 through the stage 7. More specifically, the heat transfer gas supply device 6 can supply gas to the lower surface of the substrate disposed on the upper surface of the stage 7. Also, the heat transfer gas supply device 6 can supply gas to the lower surface of the focus ring 5 supported on the upper surface of the stage 7. For this purpose, the heat transfer gas supply device 6 can include a gas tank, a compressor, and a valve, etc. The gas supplied by the heat transfer gas supply device 6 can include, for example, helium (He) gas, but is not limited thereto. The detailed content regarding this will be described later.

[0030] The vacuum pump VP can be connected to the process space 1h. By the vacuum pump VP, a vacuum pressure can be applied to the process space 1h while the process on the substrate is in progress.

[0031] The gas supply device GS can supply process gas to the process space 1h. For this purpose, the gas supply device GS can include a gas tank, a compressor, and a valve, etc. A part of the process gas supplied to the process space 1h by the gas supply device GS can become plasma.

[0032] FIG. 2 is a cross-sectional view showing a stage and a focus ring according to an embodiment of the present invention, FIG. 3 is an enlarged cross-sectional view showing the X region of FIG. 2, FIG. 4 is an exploded cross-sectional view of FIG. 3, FIG. 5 is a perspective view showing a stage and a focus ring according to an embodiment of the present invention, and FIG. 6 is a partially cut-away perspective view showing a stage and a focus ring according to an embodiment of the present invention.

[0033] Referring to FIGS. 2 to 6, the stage 7 can include a chuck body 71, a support member 72, a plasma electrode 73, a chuck electrode 75, a heater 77, and an outer chuck electrode 79.

[0034] The chuck body 71 can support a substrate and a focus ring 5 or the like. That is, the substrate and the focus ring 5 can be disposed on the upper surface 71u of the chuck body 71. The chuck body 71 can have a cylindrical shape, but is not limited thereto. The upper surface 71u of the chuck body 71 can include a support upper surface 711u and an edge upper surface 713u. The level of the support upper surface 711u can be higher than the level of the edge upper surface 713u. The support upper surface 711u can have a circular shape. The substrate can be disposed on the support upper surface 711u. That is, the support upper surface 711u can support the substrate. The edge upper surface 713u can surround the support upper surface 711u. The edge upper surface 713u can have a ring shape. The focus ring 5 can be positioned on the edge upper surface 713u. That is, the edge upper surface 713u can support the focus ring 5. More detailed content regarding the edge upper surface 713u will be described later.

[0035] The support member 72 can support the chuck body 71. The support member 72 can have a cylindrical shape, but is not limited thereto.

[0036] The plasma electrode 73 may be located within the chuck body 71. RF power may be applied to the plasma electrode 73 to control plasma within the process space 1h (see FIG. 1). The plasma electrode 73 may have a disk shape, but is not limited thereto.

[0037] The chuck electrode 75 may be located within the chuck body 71. The chuck electrode 75 may be electrically connected to the first chucking power application unit 21. DC power may be applied to the chuck electrode 75 by the first chucking power application unit 21. Thus, the substrate on the stage 7 may be fixed to the stage 7. The chuck electrode 75 may have a disk shape, but is not limited thereto.

[0038] The heater 77 may be located within the chuck body 71. The heater 77 may include multiple coils having a concentric configuration.

[0039] The outer chuck electrode 79 may be located within the chuck body 71. The outer chuck electrode 79 may be located outside the chuck electrode 75. That is, the outer chuck electrode 79 may surround the chuck electrode 75 in a plan view. The outer chuck electrode 79 may have a ring shape, but is not limited thereto. The outer chuck electrode 79 may contain, for example, Al2O3. The outer chuck electrode 79 may be located below the focus ring 5. The outer diameter of the outer chuck electrode 79 may be larger than the outer diameter of the edge upper surface 713u. This will be described in detail later.

[0040] The chuck body 71 can provide a cooling flow path 71ch and a gas supply flow path. The cooling flow path 71ch can be provided inside the chuck body 71. The cooling flow path 71ch may not be connected to the upper surface 71u of the chuck body 71. That is, the cooling flow path 71ch may not be exposed by the upper surface 71u of the chuck body 71. A cooling fluid can flow in the cooling flow path 71ch. Therefore, the temperature of the chuck body 71 can be controlled. The gas supply flow path can be recessed downward from the upper surface 71u of the chuck body 71. The gas supply flow path can be connected to the heat transfer gas supply device 6 (refer to FIG. 1). The heat transfer gas supply device 6 can supply gas onto the upper surface 7u of the stage 7 through the gas supply flow path. Therefore, heat transfer can occur between the substrate on the stage 7 and the stage 7. Also, thereby, heat transfer can occur between the focus ring 5 on the stage 7 and the stage 7. For this purpose, the gas supply flow path can include an outer flow path 71gh. The outer flow path 71gh can be located under the focus ring 5. The outer flow path 71gh can be connected to the upper surface 71u of the stage 7. More specifically, the outer flow path 71gh can be connected to the edge upper surface 713u. That is, the outer flow path 71gh can be exposed by the edge upper surface 713u. Detailed content regarding this will be described later.

[0041] FIG. 7 is a perspective view showing a focus ring according to an embodiment of the present invention.

[0042] Referring to FIG. 7, the focus ring 5 can include a ring body 51 and an outer member 53.

[0043] The ring body 51 can have an axis AX extending in the first direction D1. The ring body 51 can include, but is not limited to, silicon carbide (SiC). That is, the ring body 51 may include silicon (Si) and / or quartz, etc. The ring body 51 can include an upper surface, an inner surface 51i, a lower surface 51b, and an outer surface 51e.

[0044] The upper surface of the ring body 51 may include a first upper surface 51au, a second upper surface 51bu, and a connecting upper surface 51c. The first upper surface 51au may be perpendicular (orthogonal) to the first direction D1. The first upper surface 51au may have a ring shape. The second upper surface 51bu may be located outside the first upper surface 51au. The level of the second upper surface 51bu may be higher than the level of the first upper surface 51au. The connecting upper surface 51c may connect the first upper surface 51au and the second upper surface 51bu. The connecting upper surface 51c may form an acute angle with the first direction D1, but is not limited to this. For example, the connecting upper surface 51u may be parallel to the first direction D1.

[0045] The inner surface 51i of the ring body 51 may extend downward from the upper surface of the ring body 51. The ring body 51 may include a first inner surface 51ai, a second inner surface 51bi, and a third inner surface 51ci.

[0046] The first inner surface 51ai may be connected to an inner end of the first upper surface 51au. The first inner surface 51ai may extend downward from the first upper surface 51au. The first inner surface 51ai may be parallel to the first direction D1. That is, the first inner surface 51ai may extend downward from the first upper surface 51au so as to be parallel to the first direction D1.

[0047] The second inner surface 51bi may be connected to a lower end of the first inner surface 51ai. The second inner surface 51bi may extend downward from the lower end of the first inner surface 51ai. The second inner surface 51bi may form an acute angle (β) with the first direction D1. That is, the second inner surface 51bi may extend downward from the lower end of the first inner surface 51ai, forming an acute angle with the first direction D1. The acute angle formed by the second inner surface 51bi with the first direction D1 may be referred to as the first acute angle (β). The first acute angle (β) may be, for example, about 0.01° to about 5.00°, but is not limited thereto.

[0048] The third inner surface 51ci can be connected to the lower end of the second inner surface 51bi. The third inner surface 51ci can extend from the second inner surface 51bi toward the lower surface 51b of the ring body 51. That is, the third inner surface 51ci can connect the second inner surface 51bi and the lower surface 51b of the ring body 51. The third inner surface 51ci can form an acute angle (γ) with the first direction D1. The acute angle formed by the third inner surface 51ci and the first direction D1 can be referred to as the third acute angle (γ). The third acute angle (γ) can be made larger than the first acute angle (β).

[0049] The lower surface 51b of the ring body 51 can extend outward from the lower end of the inner surface 51i of the ring body 51. The lower surface 51b of the ring body 51 can include a flat surface 51ab and an inclined surface 51bb.

[0050] The flat surface 51ab can be perpendicular (orthogonal) to the first direction D1. That is, the flat surface 51ab can be parallel to the horizontal direction. The width w1 of the flat surface 51ab can be made smaller than the width of the inclined surface 51bb. More specifically, the radial width w2 of the inclined surface 51bb can be made larger than the radial width w1 of the flat surface 51ab. The radial width w1 of the flat surface 51ab can be, for example, about 1.0 mm to about 8.0 mm. More specifically, the radial width w1 of the flat surface 51ab is about 3.7 mm, but is not limited thereto.

[0051] The inclined surface 51bb may extend from the flat surface 51ab toward the inner surface 51i of the ring body 51. The inclined surface 51bb may form an acute angle (α) with the flat surface 51ab. That is, the inclined surface 51bb may form an acute angle (90°-α) with the first direction D1. The acute angle formed by the inclined surface 51bb with the first direction D1 may be referred to as a second acute angle (90°-α). The second acute angle (90°-α) may be larger than each of the first acute angle (β) and the third acute angle (γ). The second acute angle (90°-α) may be, for example, about 88.00° to about 89.95°. That is, the acute angle (α) formed by the inclined surface 51bb with the flat surface 51ab may be about 0.05° to about 2.00°.

[0052] When focus ring 5 is placed on stage 7 (see FIG. 3 ), lower surfaces 51b and 53b of focus ring 5 can contact upper surface 71u of chuck body 71. That is, focus ring 5 and stage 7 can be in direct contact with each other without the need for a separate adhesive and / or pad between them.

[0053] The outer surface 51e of the ring body 51 may extend upward from the edge of the lower surface 51b of the ring body 51. The outer surface 51e of the ring body 51 may be parallel to the first direction D1, but is not limited to this.

[0054] The outer member 53 may be connected to the outside of the ring body 51. The outer member 53 may be formed integrally with the ring body 51. For example, if the ring body 51 includes silicon carbide (SiC), the outer member 53 may also include silicon carbide (SiC). The outer member 53 may include a lower surface 53b, an upper surface 53u, and an outer surface 53e.

[0055] The lower surface 53b of the outer member 53 may include a first lower surface 53ba and a second lower surface 53bb. The level of the first lower surface 53ba may be higher than the level of the second lower surface 53bb. The second lower surface 53bb may be located inside the first lower surface 53ba. The second lower surface 53bb may contact the outer surface 51e of the ring body 51. The levels of the second lower surface 53bb and the second lower surface 53ab may each be higher than the level of the flat surface 51ab.

[0056] The upper surface 53u of the outer member 53 may be perpendicular to the first direction D1. The upper surface 53u of the outer member 53 may be connected to the upper surface of the ring body 51. The level of the upper surface 53u of the outer member 53 may be substantially the same as or similar to the level of the second upper surface 51bu of the ring body 51.

[0057] The outer surface 53e of the outer member 53 may connect the lower surface 53b of the outer member 53 to the upper surface 53u of the outer member 53. The outer surface 53e of the outer member 53 may be parallel to the first direction D1, but is not limited to this.

[0058] FIG. 8 is a cross-sectional view showing a stage according to an embodiment of the present invention, and FIG. 9 is a plan view showing a stage according to an embodiment of the present invention.

[0059] Referring to FIG. 8, the edge upper surface 713u of the stage 7 may include a flat upper surface 713au, an inclined upper surface 713bu, and an extended upper surface 713cu.

[0060] The flat upper surface 713au may be perpendicular (orthogonal) to the first direction D1. That is, the flat upper surface 713au may be parallel to the flat surface 51ab (see FIG. 7). The flat surface 51ab may be supported on the flat upper surface 713au. That is, the flat surface 51ab may be in contact with the flat upper surface 713au. The radial width of the flat upper surface 713au may be substantially the same as or similar to the radial width of the flat surface 51ab, but is not limited thereto. The outer diameter of the flat surface 51ab may be smaller than the outer diameter of the outer chuck electrode 79. Therefore, when a DC voltage is applied to the outer chuck electrode 79, the entire flat surface 51ab of the focus ring 5 may be in uniform contact with the entire flat upper surface 713au.

[0061] The inclined upper surface 713bu may be located inside the flat upper surface 713au. The inclined upper surface 713bu may extend from the flat upper surface 713au toward the supporting upper surface 711u. The inclined upper surface 713bu may form an acute angle (δ) with the flat upper surface 713au. The acute angle formed by the inclined upper surface 713bu and the flat upper surface 713au may be referred to as the fourth acute angle (δ). The fourth acute angle (δ) may be substantially the same as or similar to the second acute angle (90°-α, see FIG. 7 ). That is, the inclined upper surface 713bu may be parallel to the inclined surface 51bb (see FIG. 7 ). The inclined surface 51bb may be supported on the inclined upper surface 713bu. That is, the inclined surface 51bb may contact the inclined upper surface 713bu.

[0062] The extended upper surface 713cu may be located inside the inclined upper surface 713bu. The extended upper surface 713cu may be perpendicular (orthogonal) to the first direction D1, but is not limited thereto.

[0063] Referring to FIGS. 8 and 9, the outer passage 71gh may include a distribution passage 71bgh and a connection passage 71agh.

[0064] The distribution channel 71bgh may extend in a circumferential direction. That is, the distribution channel 71bgh may have a ring shape. The distribution channel 71bgh may be connected to the upper surface 71u of the chuck body 71. More specifically, the distribution channel 71bgh may be connected to the inclined upper surface 713bu. That is, the upper end of the outer channel 71gh may be located below the inclined surface 51bb.

[0065] The connection passage 71agh may extend downward from the distribution passage 71bgh. A plurality of distribution passages 71bgh may be provided. The plurality of distribution passages 71bgh may be spaced apart in the circumferential direction. However, for convenience, the distribution passage 71bgh will be referred to as the singular below. The distribution passage 71bgh may be connected to the heat transfer gas supply device 6 (see FIG. 1). Gas supplied from the heat transfer gas supply device 6 may reach the connection passage 71agh through the distribution passage 71bgh. The gas supplied from the heat transfer gas supply device 6 may be diffused in the circumferential direction along the connection passage 71agh and then rise toward the underside of the focus ring 5 (see FIG. 7).

[0066] FIG. 10 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

[0067] 10, a substrate processing method (SS) may be provided. The substrate processing method (SS) may be a method of processing a substrate using the substrate processing apparatus SA (see FIG. 1) described with reference to FIGS. 1 to 9. The substrate processing method (SS) may include placing a focus ring on a stage (S1), supplying gas below the focus ring through the stage (S2), placing a substrate on the stage (S3), and supplying a process gas into the substrate processing apparatus (S4).

[0068] The substrate processing method (SS) of FIG. 10 will be described in detail below with reference to FIGS. 11 to 16.

[0069] 11 to 16 are diagrams showing a substrate processing method according to the flowchart of FIG.

[0070] Referring to FIGS. 11, 12, and 10, placing the focus ring on the stage (S1) can include placing the focus ring 5 on the upper surface 713u of the edge. After the focus ring 5 is placed on the upper surface 713u of the edge, the focus ring 5 can be fixed on the stage 7 by the chucking power DP applied from the second chucking power applying device 23 (refer to FIG. 13) to the outer chuck electrode 79.

[0071] Referring to FIGS. 13 and 10, supplying gas under the focus ring through the stage (S2) can include the heat transfer gas supply device 6 supplying the gas CG. The gas CG supplied by the heat transfer gas supply device 6 can be a heat transfer gas. The gas CG supplied by the heat transfer gas supply device 6 can include, for example, helium (He) gas, but is not limited thereto. The gas CG supplied by the heat transfer gas supply device 6 can reach the lower surface of the focus ring 5 through the outer flow path 71gh. More specifically, the gas CG rising in the outer flow path 71gh can reach the inclined surface 51bb (refer to FIG. 7). The gas CG reaching the inclined surface 51bb can spread along the space between the inclined surface 51bb and the upper inclined surface 713bu (refer to FIG. 8). Therefore, the gas CG can be discharged uniformly.

[0072] Referring to FIGS. 14 and 10, placing the substrate on the stage (S3) can include placing the substrate WF on the support upper surface 711u (refer to FIG. 8). After the substrate WF is placed on the stage 7, the substrate WF can be fixed at a certain position on the stage 7 by the DC power applied by the first chucking power applying device 21.

[0073] 15 and 11, supplying a process gas into the substrate processing apparatus (S4) may include supplying a process gas PG to the process space 1h from the gas supply unit GS. The process gas PG may include, but is not limited to, argon (Ar) gas, oxygen (O) gas, and / or chlorine (Cl) gas. The process gas PG may be uniformly distributed onto the substrate WF through the showerhead 3.

[0074] 16, a portion of the process gas PG (see FIG. 15) in the process space 1h may be converted into plasma PL by RF power applied from the RF power application device 4. The substrate WF on the stage 7 may be processed by the plasma PL. For example, the substrate WF on the stage 7 may be etched by the plasma PL.

[0075] In accordance with exemplary embodiments of the present invention, a focus ring, a substrate processing apparatus including the same, and a substrate processing method using the same, the shape of the upper surface of the stage matches the shape of the upper surface of the focus ring, allowing the focus ring to be accurately and quickly positioned on the stage. More specifically, the focus ring can be accurately positioned on the stage due to the inclined and flat upper surfaces of the stage matching the inclined and flat surfaces of the focus ring, respectively.

[0076] In the focus ring, substrate processing apparatus including the same, and substrate processing method using the same according to exemplary embodiments of the present invention, the inner surface of the focus ring is partially inclined, so that the position of the focus ring can be automatically aligned during the process of placing the focus ring on a stage. Therefore, even less skilled workers can easily place the focus ring. Furthermore, because the upper portion of the inner surface of the focus ring is not inclined, the inner edge of the focus ring is prevented from being etched by plasma during processing. Therefore, the focus ring can be used for a long period of time.

[0077] According to the exemplary embodiment of the present invention, in a focus ring, a substrate processing apparatus including the same, and a substrate processing method using the same, the gas supplied from the cooling gas supply device can be discharged uniformly and constantly through the space between the inclined surface of the focus ring and the inclined upper surface of the stage. Therefore, the outflow of the gas can be appropriately controlled to improve the process yield.

[0078] As described above, the embodiments of the present invention have been described with reference to the accompanying drawings. However, those having ordinary knowledge in the technical field to which the present invention pertains can understand that the present invention can be implemented in other specific forms without changing its technical idea and essential features. Therefore, it should be understood that the embodiments described above are exemplary in all aspects and not restrictive.

Description of Reference Numerals

[0079] SA Substrate processing apparatus 1 Process chamber 1h Process space 3 Shower head GS Gas supply device 21 First chucking power application device 23 Second chucking power application device 4 RF power application device 6 Heat transfer gas supply device 7 Stage 71 Chuck body 71ch Cooling flow path 71gh Outer flow path 711u Support upper surface 713u Edge upper surface 713au Flat upper surface 713bu Inclined upper surface 73 Plasma electrode 75 Chuck electrode 77 Heater 79 Outer chuck electrode 72 Support member 5 Focus ring 51 Ring body 51ai First inner surface 51bi 2nd inner surface 51ci 3rd inner surface 51ab Flat surface 51bb slope 53 Outer member 9 Outer Ring

Claims

1. including a ring body having an axis extending in a first direction, wherein the ring body, has an upper surface, an inner surface extending downward from the upper surface, and a lower surface extending outward from a lower end of the inner surface, wherein the inner surface, includes a first inner surface extending downward from the upper surface so as to be parallel to the first direction, and a second inner surface extending downward from a lower end of the first inner surface and forming a first acute angle with the first direction, wherein the lower surface, has a flat surface perpendicular to the first direction, and an inclined surface extending from the flat surface and forming a second acute angle with the first direction and extending toward the second inner surface, a focus ring.

2. The focus ring according to claim 1, wherein the second acute angle is larger than the first acute angle.

3. The focus ring according to claim 2, wherein the second acute angle is from 88.00° to 89.95°.

4. The inner surface further includes a third inner surface extending from a lower end of the second inner surface toward the inclined surface and connecting the second inner surface and the inclined surface, wherein the third inner surface forms a third acute angle with the first direction, and the focus ring according to claim 1, wherein the third acute angle is larger than the first acute angle and smaller than the second acute angle.

5. The focus ring according to claim 1, wherein a radial width of the flat surface is smaller than a radial width of the inclined surface.

6. a process chamber providing a process space, a stage in the process chamber, and a focus ring on the stage, wherein the stage, includes a chuck body, and a chuck electrode in the chuck body, wherein the chuck body provides a gas supply flow path recessed downward from an upper surface of the chuck body, the gas supply flow path includes an outer flow path located below the focus ring, the focus ring includes a ring body, wherein the ring body, has an upper surface, an inner surface extending downward from the upper surface, and a lower surface extending outward from a lower end of the inner surface, wherein the lower surface, has a flat surface parallel to a horizontal direction, and an inclined surface extending from the flat surface toward the inner surface and forming an acute angle with the flat surface, a substrate processing apparatus.

7. The upper surface of the chuck body, includes a support upper surface for supporting a substrate, and a ring-shaped edge upper surface surrounding the support upper surface, wherein a level of the support upper surface is higher than a level of the edge upper surface, The substrate processing apparatus according to claim 6, wherein the focus ring is located on the upper surface of the edge.

8. The upper surface of the edge includes a flat upper surface parallel to the flat surface, and an inclined upper surface extending from the flat upper surface toward the support upper surface and forming an acute angle with the flat upper surface. The substrate processing apparatus according to claim 7, wherein the outer flow path is connected to the inclined upper surface.

9. placing a focus ring on a stage of a substrate processing apparatus; supplying gas under the focus ring through the stage; placing a substrate on the stage; including supplying a process gas into the substrate processing apparatus. The focus ring includes a ring body. The ring body has an upper surface, an inner surface extending downward from the upper surface, and a lower surface extending outward from the lower end of the inner surface. The lower surface includes a flat surface parallel to the horizontal direction, and an inclined surface extending from the flat surface toward the inner surface and forming an acute angle with the flat surface. The method of processing a substrate, wherein supplying the gas under the focus ring includes supplying the gas toward the inclined surface under the inclined surface.

10. Placing the focus ring on the stage includes placing the focus ring such that the lower surface of the focus ring contacts the upper surface of the stage, and applying a DC voltage to an outer chucking electrode of the stage to fix the focus ring. The method of processing a substrate according to claim 9.

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