Manufacturing method and manufacturing system of semiconductor device

Abstract

To maintain the shape of an air gap even when another film is formed on the air gap.SOLUTION: A manufacturing method of a semiconductor device includes the steps a), b), c), and d). In the step a), a sacrificial material is embedded in a recess formed in a substrate. In the step b), the recess with the sacrificial material embedded is covered with a first sealing film. In the step c), the sacrificial material in the recess is decomposed by at least one of heating the substrate and irradiating the substrate with plasma, and the sacrificial material in the recess is removed through the first sealing film. In the step d), a second sealing film is formed on the first sealing film.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] Various aspects and embodiments of the present disclosure relate to a method of manufacturing a semiconductor device and a manufacturing system.

Background Art

[0002] For example, Patent Document 1 below discloses "a method of manufacturing a semiconductor device including a first lamination step of laminating a thermally decomposable organic material on a substrate having a recess, a second lamination step of laminating a silicon nitride film on the organic material, and a desorption step of thermally decomposing the organic material by heating the substrate to a predetermined temperature and desorbing the organic material under the silicon nitride film through the silicon nitride film to form an air gap between the silicon nitride film and the recess, and in the second lamination step, the silicon nitride film is laminated using microwave plasma while the temperature of the substrate is maintained at 200 [°C] or lower."

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a method of manufacturing a semiconductor device and a manufacturing system capable of maintaining the shape of an air gap even when another film is formed on the air gap.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a method for manufacturing a semiconductor device, including step a), step b), step c), and step d). In step a), a sacrificial material is embedded in a recess formed in a substrate. In step b), the recess in which the sacrificial material is embedded is covered with a first sealing film. In step c), at least one of a process of heating the substrate and a process of irradiating the substrate with plasma is performed to decompose the sacrificial material in the recess, and the sacrificial material in the recess is removed through the first sealing film. In step d), a second sealing film is formed on the first sealing film.

Advantages of the Invention

[0006] According to various aspects and embodiments of the present disclosure, the shape of the air gap can be maintained even when another film is formed on the air gap.

Brief Description of the Drawings

[0007]

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[0008] Hereinafter, embodiments of the manufacturing method and manufacturing system of the disclosed semiconductor device will be described in detail with reference to the drawings. Note that the manufacturing method and manufacturing system of the disclosed semiconductor device are not limited by the following embodiments.

[0009] In the technology of Patent Document 1, when another film is formed on the sealing film after the air gap is formed, the material of the other film may penetrate into the air gap through the sealing film, and another film may be formed in the air gap. When another film is formed in the air gap, the volume of the air gap becomes smaller than the desired volume. In addition, if the volume of the other film formed in the air gap varies among the air gaps, variations in volume occur among the plurality of air gaps. Therefore, it is desired to suppress the formation of another film in the air gap.

[0010] Therefore, the present disclosure provides a technique capable of maintaining the shape of the air gap even when another film is formed on the air gap.

[0011] [Configuration Example of Manufacturing System 10] FIG. 1 is a system configuration diagram showing an example of a manufacturing system 10 in an embodiment of the present disclosure. The manufacturing system 10 includes a VTM (Vacuum Transfer Module) 11, a plurality of LLM (Load Lock Modules) 12, and an EFEM (Equipment Front End Module) 13. A film forming apparatus 20, a plasma processing apparatus 30-1, a plasma processing apparatus 30-2, a plasma processing apparatus 30-3, and a heating apparatus 40 are connected to the side wall of the VTM 11 via a gate valve G. Hereinafter, when collectively referring to each of the plasma processing apparatus 30-1, the plasma processing apparatus 30-2, and the plasma processing apparatus 30-3 without distinction, it is described as the plasma processing apparatus 30. In the example of FIG. 1, one film forming apparatus 20 and one heating apparatus 40 are connected to the VTM 11 respectively, and three plasma processing apparatuses 30 are connected, but the disclosed technology is not limited to this. As another form, a plurality of at least one of the film forming apparatus 20 and the heating apparatus 40 may be connected to the VTM 11. Also, as another form, the number of plasma processing apparatuses 30 connected to the VTM 11 may be two or less, or may be four or more.

[0012] The film forming apparatus 20 embeds a sacrificial material into a recess formed in a substrate. In the present embodiment, the sacrificial material is a thermally decomposable organic material. The film forming apparatus 20 is an example of a first processing apparatus.

[0013] The plasma processing apparatus 30-1 generates plasma and irradiates the substrate with active species and the like contained in the generated plasma to remove unnecessary sacrificial material formed on the substrate. Further, the plasma processing apparatus 30-1 forms a first sealing film on the recess in which the sacrificial material is embedded. The plasma processing apparatus 30 is an example of a second processing apparatus.

[0014] After the sacrificial material is removed, the plasma processing apparatus 30-2 forms a second sealing film on the first sealing film. The plasma processing apparatus 30-2 is an example of a fourth processing apparatus. The plasma processing apparatus 30-3 forms another film on the substrate W on which the second sealing film is formed.

[0015] The heating device 40 heats a substrate in which a sacrificial material is embedded in a recess and a first sealing film is formed, thereby thermally decomposing the sacrificial material and removing the sacrificial material through the first sealing film. The heating device 40 is an example of a third processing device.

[0016] A plurality of LLM12s are connected to the other side wall of the VTM11 via a gate valve G. In the example of FIG. 1, two LLM12s are connected to the VTM11, but the number of LLM12s connected to the VTM11 may be more than two or may be one.

[0017] A transfer robot 110 is disposed inside the VTM11. The transfer robot 110 transfers the substrate between the film forming device 20, the plasma processing device 30, the heating device 40, and the LLM12. The inside of the VTM11 is maintained at a predetermined pressure atmosphere lower than the atmospheric pressure.

[0018] One side wall of each LLM12 is connected to the VTM11 via a gate valve G, and the other side wall is connected to the EFEM13 via a gate valve G. When the substrate is carried into the LLM12 from the EFEM13 via the gate valve G, the gate valve G is closed, and the pressure inside the LLM12 is reduced to a pressure approximately the same as the pressure inside the VTM11. Then, the gate valve G is opened, and the substrate inside the LLM12 is carried out into the VTM11 by the transfer robot 110.

[0019] Also, with the pressure inside the LLM12 being approximately the same as the pressure inside the VTM11, the substrate is carried into the LLM12 from the VTM11 via the gate valve G by the transfer robot 110, and the gate valve G is closed. Then, the pressure inside the LLM12 is increased to a pressure approximately the same as the pressure inside the EFEM13. Then, the gate valve G is opened, and the substrate inside the LLM12 is carried out into the EFEM13.

[0020] On the side wall of the EFEM 13 opposite to the side wall where the gate valve G is provided, a plurality of load ports 14 are provided. To each load port 14, a container such as a FOUP (Front Opening Unified Pod) capable of accommodating a plurality of substrates is connected. Note that an aligner module or the like for changing the orientation of the substrate may be provided inside the EFEM 13.

[0021] The inside of the EFEM 13 is, for example, at atmospheric pressure. Inside the EFEM 13, a transfer robot 130 is provided. The transfer robot 130 transfers the substrate between the LLM 12 and the container connected to the load port 14. Above the EFEM 13, an FFU (Fan Filter Unit) or the like is provided, and dry air from which particles and the like have been removed is supplied into the EFEM 13 from above, and a downflow is formed inside the EFEM 13. Note that in this embodiment, the inside of the EFEM 13 is at atmospheric pressure, but as another form, the pressure inside the EFEM 13 may be controlled to be a positive pressure. Thereby, the intrusion of particles and the like from the outside into the EFEM 13 can be suppressed.

[0022] The control device 15 includes a memory, a processor, and an input / output interface. In the memory, data such as a control program and a processing recipe are stored. The processor reads out the control program from the memory and executes it, and controls each part of the manufacturing system 10 via the input / output interface based on the recipe and the like stored in the memory.

[0023] [Configuration example of the film forming apparatus 20] FIG. 2 is a diagram showing an example of the film forming apparatus 20. The film forming apparatus 20 includes a chamber 21, an exhaust mechanism 22, a gas supply unit 23, a shower head 25, and a stage 26. In this embodiment, the film forming apparatus 20 is, for example, a CVD (Chemical Vapor Deposition) apparatus.

[0024] The exhaust mechanism 22 includes a vacuum pump for exhausting the gas in the chamber 21 and a pressure adjustment valve for adjusting the pressure in the chamber 21. The inside of the chamber 21 is controlled to a vacuum atmosphere with a predetermined pressure by the exhaust mechanism 22.

[0025] A gas supply unit 23 for supplying a plurality of types of raw material monomers is connected to the chamber 21 via a shower head 25. In the present embodiment, the plurality of types of raw material monomers are, for example, isocyanate and amine. The isocyanate is an example of the first monomer, and the amine is an example of the second monomer. The gas supply unit 23 includes a raw material supply source 230a, a raw material supply source 230b, a vaporizer 231a, and a vaporizer 231b. The raw material supply source 230a stores, for example, a liquid of isocyanate. The raw material supply source 230b stores, for example, a liquid of amine.

[0026] The vaporizer 231a vaporizes the liquid of isocyanate supplied from the raw material supply source 230a. The vapor of isocyanate vaporized by the vaporizer 231a is introduced into the shower head 25 via the pipe 24a. Further, the vaporizer 231b vaporizes the liquid of amine supplied from the raw material supply source 230b. The vapor of amine vaporized by the vaporizer 231b is introduced into the shower head 25 via the pipe 24b.

[0027] The shower head 25 is provided, for example, at the upper part of the chamber 21, and a large number of discharge ports are formed on the lower surface. The shower head 25 discharges the vapor of isocyanate introduced via the pipe 24a and the vapor of amine introduced via the pipe 24b into the chamber 21 in a shower shape from separate discharge ports.

[0028] Inside the chamber 21, a stage 26 is provided. The stage 26 has a temperature control mechanism (not shown). On the stage 26, a substrate W carried into the chamber 21 through an opening 21a formed in the side wall of the chamber 21 is placed. The opening 21a is opened and closed by a gate valve G. The stage 26 has a temperature control mechanism, and controls the temperature of the substrate W by the temperature control mechanism so as to reach a temperature suitable for vapor phase polymerization of the raw material monomer supplied from the gas supply unit 23. The temperature suitable for vapor phase polymerization can be determined according to the type of the raw material monomer. The temperature suitable for vapor phase polymerization is, for example, a temperature within the range of 60°C to 100°C.

[0029] By causing a vapor phase polymerization reaction of two types of raw material monomers on the surface of the substrate W using such a film forming apparatus 20, a polymer organic film is formed on the surface of the substrate W. When the two types of raw material monomers are isocyanate and amine, a polymer organic film having a polyurea bond is formed on the surface of the substrate W. The polymer organic film is an example of a sacrificial material.

[0030] [Configuration example of plasma processing apparatus 30] FIG. 3 is a diagram showing an example of a plasma processing apparatus 30. The plasma processing apparatus 30 has a chamber 31 formed of a conductive material. The chamber 31 is grounded. An exhaust mechanism 32 is connected to the chamber 31. The exhaust mechanism 32 has a pressure regulating valve. The exhaust mechanism 32 exhausts the gas in the chamber 31 and controls the pressure regulating valve so that the inside of the chamber 31 reaches a predetermined pressure.

[0031] In the chamber 31, a stage 33 on which the substrate W is placed is provided. The substrate W carried into the chamber 31 through an opening 31a formed in the side wall of the chamber 31 is placed on the stage 33. The opening 31a is opened and closed by a gate valve G. A heater 33a for heating the substrate W is provided in the stage 33. Further, the stage 33 is electrically connected to the bottom of the chamber 31 and functions as an anode electrode. Above the stage 33, a shower head 34 is provided so as to face the upper surface of the stage 33. The shower head 34 is formed of a conductive material and is supported by the upper part of the chamber 31 via an insulating member 34a. A power source 35 for supplying high-frequency power for plasma generation is connected to the shower head 34. The shower head 34 functions as a cathode electrode with respect to the stage 33.

[0032] The gas supply source 36 supplies a processing gas. The flow rate controller 37 adjusts the flow rate of the processing gas supplied from the gas supply source 36 and supplies it into the diffusion space 34b of the shower head 34. The processing gas supplied into the diffusion space 34b diffuses in the diffusion space 34b and is shower-supplied into the chamber 31 from a plurality of discharge ports 34c formed on the lower surface of the diffusion space 34b. In the example of FIG. 3, one gas supply source 36 and one flow rate controller 37 are shown, but actually, a set of the gas supply source 36 and the flow rate controller 37 is provided for each type of gas used.

[0033] The processing gas supplied into the chamber 31 through the shower head 34 is turned into plasma by the high-frequency power supplied into the chamber 31 from the power source 35. Then, a part of the sacrificial material formed on the substrate W is removed, or a first sealing film, a second sealing film, and other films are formed on the substrate W by ions, active species, etc. contained in the plasma. In the present embodiment, the first sealing film, the second sealing film, and other films are, for example, silicon oxide films. As another example, the first sealing film and the second sealing film may be other silicon-containing films such as silicon nitride films.

[0034] [Configuration example of heating device 40] FIG. 4 is a diagram showing an example of the heating device 40. The heating device 40 includes a chamber 41, an exhaust pipe 42, a supply pipe 43, a stage 44, a lamp house 45, and a lamp 46.

[0035] Inside the chamber 41, a stage 44 on which the substrate W is placed is provided. A lamp house 45 is provided at a position facing the surface of the stage 44 on which the substrate W is placed. Inside the lamp house 45, a lamp 46 such as an infrared lamp is arranged.

[0036] A gas supply unit 47 is connected to the side wall of the chamber 41 via the supply pipe 43. The gas supply unit 47 supplies an inert gas such as N2 gas into the chamber 41 via the supply pipe 43. Further, an opening 41a for loading and unloading the substrate W is formed in the side wall of the chamber 41. The opening 41a is opened and closed by a gate valve G.

[0037] An exhaust device 48 is connected to the bottom of the chamber 41 via the exhaust pipe 42. The exhaust device 48 has a pressure regulating valve. The exhaust device 48 exhausts the gas inside the chamber 41 and controls the pressure regulating valve so that the inside of the chamber 41 becomes a predetermined pressure.

[0038] With the substrate W placed on the stage 44 and an inert gas being supplied into the chamber 41 via the supply pipe 43, by lighting the lamp 46, the substrate W can be heated to a predetermined temperature in an atmosphere of the inert gas. In this embodiment, the substrate W is heated to a temperature of, for example, 400°C or lower.

[0039] [Method for manufacturing a semiconductor device] FIG. 5 is a flowchart showing an example of a method for manufacturing a semiconductor device. The manufacturing method illustrated in FIG. 5 is realized by the control device 15 controlling each part of the manufacturing system 10. Hereinafter, an example of a method for manufacturing a semiconductor device will be described with reference to FIGS. 6 to 12.

[0040] First, the substrate W is carried into the chamber 21 of the film forming apparatus 20 (step S100). In step S100, for example, as shown in FIG. 6, the substrate W having the recess 60 formed therein is carried into the chamber 21 of the film forming apparatus 20.

[0041] Next, a sacrificial material is embedded in the recess 60 (step S101). Step S101 is an example of step a). In step S101, a first monomer and a second monomer are supplied into the chamber 21, and the sacrificial material is embedded in the recess 60 of the substrate W by causing a vapor deposition polymerization reaction of the first monomer and the second monomer. In the present embodiment, the first monomer is, for example, isocyanate, the second monomer is, for example, amine, and the sacrificial material has a polyurea bond. As a result, for example, as shown in FIG. 7, the sacrificial material 61 is embedded in the recess 60.

[0042] In step S101, the sacrificial material 61 is embedded in the recess of the substrate W under the following processing conditions, for example. Pressure in the chamber 21: 0.5 to 20 Torr (66.7 to 2666 Pa) Flow rate of the vapor of isocyanate: 1 to 20 sccm (0.0017 to 0.034 Pa·m 3 / s) Flow rate of the vapor of amine: 1 to 20 sccm (0.0017 to 0.034 Pa·m 3 / s) Temperature of the substrate W: 40 to 150 °C

[0043] Next, the substrate W is transferred from the film forming apparatus 20 to the plasma processing apparatus 30-1 (step S102). In step S102, the substrate W is carried out of the chamber 21 of the film forming apparatus 20 by the transfer robot 110 in the VTM11 and carried into the chamber 31 of the plasma processing apparatus 30-1.

[0044] Next, unnecessary sacrificial material 61 on the substrate W is removed (step S103). In step S103, plasma is generated from a processing gas in the chamber 31. The processing gas is, for example, a mixed gas of hydrogen gas and nitrogen gas. Then, the generated plasma removes the unnecessary sacrificial material 61 formed around the recess 60, for example, as shown in FIG. 8. In step S103, the unnecessary sacrificial material 61 is removed by the plasma processing apparatus 30 under, for example, the following processing conditions. Pressure in the chamber 31: 0.05 to 1.0 Torr (6.67 to 133 Pa) Processing gas: H2 / N2 = 100 to 300 sccm / 100 to 300 sccm (0.17 to 0.51 Pa·m 3 / s / 0.17 to 0.51 Pa·m 3 / s) High-frequency power: 100 to 400 W Temperature of the substrate W: 40 to 200 °C

[0045] Next, a first sealing film is formed on the recess 60 filled with the sacrificial material 61 (step S104). Step S104 is an example of step b). In step S104, plasma is generated from a processing gas such as organic aminosilane in the chamber 31. Then, the generated plasma forms a first sealing film 62 on the recess 60 filled with the sacrificial material 61, for example, as shown in FIG. 9.

[0046] In the present embodiment, the thickness of the first sealing film 62 is 1.6 nm or more and 2.4 nm or less. Further, a plurality of openings are formed in the first sealing film 62, and the maximum diameter of the openings is 0.7 nm or more. In step S104, the first sealing film 62 is formed by the plasma processing apparatus 30 under, for example, the following processing conditions. Pressure in the chamber 31: 0.1 to 10 Torr (13.3 to 1333 Pa) Processing gas: organic aminosilane = 10 to 50 sccm (0.017 to 0.085 Pa·m 3 / s) High-frequency power: 50 - 200 W Temperature of substrate W: 20 - 200 °C

[0047] Next, the substrate W is transferred from the plasma processing apparatus 30-1 to the heating apparatus 40 (step S105). In step S105, the substrate W is carried out of the chamber 31 of the plasma processing apparatus 30 by the transfer robot 110 in the VTM11 and carried into the chamber 41 of the heating apparatus 40.

[0048] Next, the substrate W is heated (step S106). Step S106 is an example of step d). In step S106, the sacrificial material 61 is thermally decomposed by heating the substrate W to a temperature of, for example, 400 °C or lower, and the sacrificial material 61 is desorbed through the first sealing film 62.

[0049] Here, the molecular sizes of the first monomer and the second monomer are 0.7 nm or less, and by being heated, the molecules of the first monomer and the second monomer are decomposed into even smaller molecules. Also, the maximum diameter of the opening of the first sealing film 62 is 0.7 nm or more. Therefore, the molecules of the first monomer and the second monomer thermally decomposed from the sacrificial material 61 can desorb from within the recess 60 through the first sealing film 62. As a result, an air gap 63 is formed between the first sealing film 62 and the recess 60, as shown in, for example, FIG. 10.

[0050] In step S106, the substrate W is heated under, for example, the following processing conditions. Pressure inside chamber 41: 0.5 - 20 Torr (66.7 - 2666 Pa) Gas supplied into chamber 41: N2 = 200 - 2000 sccm (0.34 - 3.4 Pa·m 3 / s) Temperature of substrate W: 350 - 400 °C

[0051] Next, the substrate W is transferred from the heating device 40 to the plasma processing device 30-2 (step S107). In step S107, the substrate W is carried out from the chamber 41 of the heating device 40 by the transfer robot 110 in the VTM11 and carried into the chamber 31 of the plasma processing device 30-2.

[0052] Next, a second sealing film is formed on the first sealing film (step S108). Step S108 is an example of step d). In step S108, plasma is generated from a processing gas such as organic aminosilane in the chamber 31. Then, by the generated plasma, a second sealing film 64 is formed on the first sealing film 62 as shown in FIG. 11, for example.

[0053] In the present embodiment, the thickness of the second sealing film 64 is 1.2 nm or more. Also, in the sealing film including the first sealing film 62 and the second sealing film 64, the maximum diameter of the opening is 0.35 nm or less. In step S108, the second sealing film 64 is formed by the plasma processing device 30 under the following processing conditions, for example. Pressure in chamber 31: 0.1 to 10 Torr (13.3 to 1333 Pa) Processing gas: organic aminosilane = 10 to 50 sccm (0.017 to 0.085 Pa·m 3 / s) High-frequency power: 50 to 200 W Temperature of substrate W: 20 to 110°C

[0054] Next, the substrate W is transferred from the plasma processing device 30-2 to the plasma processing device 30-3 (step S109). In step S109, the substrate W is carried out from the chamber 31 of the plasma processing device 30-2 by the transfer robot 110 in the VTM11 and carried into the chamber 31 of the plasma processing device 30-3.

[0055] Next, another film is formed on the second sealing film (step S110). In step S110, plasma is generated from a processing gas such as DIPAS (DiIsoPropylAminoSilane) in the chamber 31. Then, another film 65 is formed on the second sealing film 64 by the generated plasma. In the present embodiment, the other film 65 is, for example, a silicon oxide film.

[0056] In step S110, another film 65 is formed by the plasma processing apparatus 30 under, for example, the following processing conditions. Pressure in the chamber 31: 0.1 to 10 Torr Processing gas: DIPAS = 5 to 100 sccm High-frequency power: 50 to 200 W Temperature of the substrate W: 20 to 200 °C

[0057] Next, the substrate W is carried out from the plasma processing apparatus 30-3 (step S111). Then, the manufacturing method of the semiconductor device shown in this flowchart ends.

[0058] Here, the molecular size of DIPAS is 0.5 to 1.0 nm. Further, in the sealing film including the first sealing film 62 and the second sealing film 64, the maximum diameter of the opening is 0.35 nm or less. Therefore, the first sealing film 62 and the second sealing film 64 can suppress the material of the other film 65 from entering the recess 60. As a result, even after another film 65 is formed on the second sealing film 64 in step S110, the shape of the air gap 63 can be maintained as shown in, for example, FIG. 12.

[0059] Note that the other film 65 formed on the second sealing film 64 is preferably formed by CVD. Thereby, the molecules contained in the material gas of the other film 65 are likely to be adsorbed on the second sealing film 64 when passing through the opening of the second sealing film 64. Therefore, the number of molecules of the material gas that completely passes through the opening of the second sealing film 64 and reaches the recess 60 can be reduced.

[0060] [Experimental Results] FIG. 13 is a diagram showing an example of the relationship between the thickness of the first sealing film 62 and the state of the air gap 63 after removing the sacrificial material 61.

[0061] When the thickness of the first sealing film 62 was 1.2 nm, when the substrate W was heated after the first sealing film 62 was formed, the first sealing film 62 was broken and the air gap 63 was not formed. Also, when the thickness of the first sealing film 62 was 2.8 nm, when the substrate W was heated after the first sealing film 62 was formed, the sacrificial material 61 in the air gap 63 was not sufficiently removed and remained as a residue in the air gap 63.

[0062] On the other hand, when the thickness of the first sealing film 62 was 1.6 nm to 2.4 nm, when the substrate W was heated after the first sealing film 62 was formed, the sacrificial material 61 in the air gap 63 was sufficiently removed and no residue was seen in the air gap 63. Therefore, the thickness of the first sealing film 62 is preferably 1.6 nm to 2.4 nm.

[0063] FIG. 14 is a diagram showing an example of the relationship between the thickness of the second sealing film 64 and the state of the air gap 63 when another film 65 is formed on the second sealing film 64. In the example of FIG. 14, the experiment was conducted with the thickness of the first sealing film 62 being 2.0 nm.

[0064] When the thickness of the second sealing film 64 was 0.4 nm, when another film 65 was formed on the second sealing film 64, the recess 60 was also filled with the other film 65. This is presumably because the molecules contained in the material gas of the other film 65 penetrated into the recess 60 through the first sealing film 62 and the second sealing film 64.

[0065] On the other hand, when the thickness of the second sealing film 64 is 1.2 nm, even if another film 65 is formed on the second sealing film 64, no other film 65 is formed in the recess 60. That is, when the thickness of the second sealing film 64 is 1.2 nm, the molecules contained in the material gas of the other film 65 are suppressed from entering the recess 60 by the first sealing film 62 and the second sealing film 64. Therefore, the thickness of the second sealing film 64 is preferably 1.2 nm or more.

[0066] As described above, the embodiments have been explained. As described above, the method for manufacturing a semiconductor device according to the present embodiment includes step a), step b), step c), and step d). In step a), a sacrificial material (sacrificial material 61) is embedded in a recess (recess 60) formed in a substrate (substrate W). In step b), the recess in which the sacrificial material is embedded is covered with a first sealing film (first sealing film 62). In step c), by performing a process of heating the substrate, the sacrificial material in the recess is decomposed, and the sacrificial material in the recess is removed through the first sealing film. In step d), a second sealing film (second sealing film 64) is formed on the first sealing film. Thereby, even when another film is formed on the air gap, the shape of the air gap can be maintained.

[0067] Also, in the above-described embodiment, the thickness of the first sealing film is a thickness of 1.6 nm or more and 2.4 nm or less. Thereby, an air gap having a desired volume can be formed.

[0068] Also, in the above-described embodiment, in step b), the temperature of the substrate may be controlled at room temperature. Thereby, the temperature control of the substrate in step b) can be easily performed.

[0069] Also, in the above-described embodiment, the thickness of the second sealing film is a thickness of 1.2 nm or more. Thereby, an air gap having a desired volume can be formed.

[0070] Also, in the above-described embodiment, the first sealing film and the second sealing film are silicon-containing films such as a silicon oxide film or a silicon nitride film. Thereby, an air gap having a desired volume can be formed.

[0071] Also, in the above-described embodiment, the second sealing film is formed using a gas of DIPAS (DiIsoPropylAminoSilane). Thereby, even when another film is formed on the air gap, the shape of the air gap can be maintained.

[0072] Also, the method for manufacturing a semiconductor device in the above-described embodiment further includes step e). Step e) is a step executed between step b) and step c), and at least a part of the sacrificial material on the substrate is removed by performing at least one of a process of heating the substrate and a process of irradiating the substrate with plasma. Thereby, an air gap having a desired volume can be formed.

[0073] Also, in the above-described embodiment, the sacrificial material may be a thermally decomposable organic material. Further, in step a), a gas of a first monomer and a second monomer is supplied into the chamber into which the substrate has been introduced, and the sacrificial material is embedded in the recess by vapor phase polymerization of the first monomer and the second monomer. The first monomer is isocyanate, the second monomer is amine, and the sacrificial material contains a urea bond. Thereby, an air gap having a desired volume can be formed.

[0074] In addition, the semiconductor device manufacturing system (manufacturing system 10) in the above-described embodiment includes a first processing device (film forming device 20), a second processing device (plasma processing device 30-1), a third processing device (heating device 40), a fourth processing device (plasma processing device 30-2), and a control device (control device 15) that controls the first processing device, the second processing device, the third processing device, and the fourth processing device. The control device executes steps a), b), c), and d). In step a), a sacrificial material is embedded in the recess using the first processing device. In step b), the recess in which the sacrificial material is embedded is covered with a first sealing film using the second processing device. In step c), the substrate is heated using the third processing device to decompose the sacrificial material in the recess, and the sacrificial material in the recess is removed through the first sealing film. In step d), a second sealing film is formed on the first sealing film using the fourth processing device. Thereby, even when another film is formed on the air gap, the shape of the air gap can be maintained.

[0075] [Others] Note that the technology disclosed in the present application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist.

[0076] For example, in the above-described embodiment, in step S106, the sacrificial material 61 is removed by heating the substrate W, but the disclosed technology is not limited thereto. For example, as another form, the substrate W may be irradiated with plasma in step S106. Thereby, active species, ions, etc. contained in the plasma are supplied to the sacrificial material 61 in the recess 60 through the first sealing film 62, and the sacrificial material 61 is decomposed and removed by the active species, ions, etc. contained in the plasma.

[0077] In addition, when the substrate W is irradiated with plasma in step S106, the substrate W may be further heated. Thereby, the sacrificial material 61 in the recess 60 can be removed more rapidly. Note that the plasma irradiated to the substrate W in step S106 is preferably generated using microwaves.

[0078] In the above-described embodiment, an organic material that can be thermally decomposed is used as the sacrificial material 61. However, the disclosed technology is not limited to this. For example, as another form, silicon-containing substances such as amorphous silicon or carbon-containing substances such as amorphous carbon may be used as the sacrificial material 61. When such a material is used as the sacrificial material 61, the sacrificial material 61 is removed using plasma in step S106. Further, when a silicon-containing substance is used as the sacrificial material 61, for example, a gas containing oxygen gas is used as the processing gas used for generating the plasma. Further, when a carbon-containing substance is used as the sacrificial material 61, for example, oxygen gas is used as the processing gas used for generating the plasma.

[0079] In the above-described embodiment, capacitively coupled plasma is used as the plasma source in steps S103, S104, and S108. However, the disclosed technology is not limited to this. As another form, other plasma sources such as microwave plasma, inductively coupled plasma, and magnetron plasma may be used as the plasma source in steps S103, S104, and S108.

[0080] In the above-described embodiment, a sacrificial material 61 of a thermally decomposable polymer having a urea bond (-NH-CO-NH-) is formed on the surface of the substrate W using isocyanate as the first monomer and amine as the second monomer. However, the disclosed technology is not limited to this. For example, a sacrificial material 61 of a thermally decomposable polymer having a 2-aminoethanol bond (-NH-CH2-CH(OH)-) may be formed on the surface of the substrate W using epoxide as the first monomer and amine as the second monomer. Alternatively, a sacrificial material 61 of a thermally decomposable polymer having a urethane bond (-NH-CO-O-) may be formed on the surface of the substrate W using isocyanate as the first monomer and alcohol as the second monomer. Alternatively, a sacrificial material 61 of a thermally decomposable polymer having an amide bond (-NH-CO-) may be formed on the surface of the substrate W using acyl halide as the first monomer and amine as the second monomer. Alternatively, a sacrificial material 61 of a thermally decomposable polymer having an imide bond (-CO-N(-)-CO-) may be formed on the surface of the substrate W using carboxylic anhydride as the first monomer and amine as the second monomer.

[0081] It should be considered that all aspects of the embodiments disclosed this time are illustrative and not restrictive. In fact, the above-described embodiments can be embodied in various forms. Also, the above embodiments may be omitted, substituted, or changed in various forms without departing from the scope and spirit of the appended claims.

[0082] Regarding the above embodiments, the following additional remarks are further disclosed.

[0083] (Supplementary Note 1) a) A step of embedding a sacrificial material in a recess formed in a substrate; b) A step of covering the recess in which the sacrificial material is embedded with a first sealing film; c) A step of decomposing the sacrificial material in the recess and removing the sacrificial material in the recess through the first sealing film by performing at least one of a process of heating the substrate and a process of irradiating the substrate with plasma; d) forming a second encapsulation film on the first encapsulation film; A method for manufacturing a semiconductor device including the above steps. (Appendix 2) The method for manufacturing a semiconductor device according to Appendix 1, wherein the thickness of the first encapsulation film is 1.6 nm or more and 2.4 nm or less. (Appendix 3) The method for manufacturing a semiconductor device according to Appendix 1 or 2, wherein in step b), the temperature of the substrate is controlled to room temperature. (Appendix 4) The method for manufacturing a semiconductor device according to any one of Appendices 1 to 3, wherein the thickness of the second encapsulation film is 1.2 nm or more. (Appendix 5) The method for manufacturing a semiconductor device according to any one of Appendices 1 to 4, wherein the first encapsulation film and the second encapsulation film are silicon-containing films. (Appendix 6) The method for manufacturing a semiconductor device according to Appendix 5, wherein the first encapsulation film and the second encapsulation film are silicon oxide films or silicon nitride films. (Appendix 7) The method for manufacturing a semiconductor device according to Appendix 6, wherein the second encapsulation film is formed using a gas of DIPAS (DiIsoPropylAminoSilane). (Appendix 8) e) a step executed between step b) and step c), removing at least a part of the sacrificial material on the substrate by performing at least one of a process of heating the substrate and a process of irradiating the substrate with plasma. The method for manufacturing a semiconductor device according to any one of Appendices 1 to 7, further including the above step. (Appendix 9) The sacrificial material is a thermally decomposable organic material, in step a), a gas of a first monomer and a second monomer is supplied into a chamber into which the substrate is carried, and the sacrificial material is embedded in the recess by vapor deposition polymerization of the first monomer and the second monomer. The first monomer is isocyanate. The second monomer is amine. The method for manufacturing a semiconductor device according to any one of Appendices 1 to 8, wherein the sacrificial material contains a urea bond. (Appendix 10) A first processing apparatus, A second processing apparatus, A third processing apparatus, A fourth processing apparatus, And a control apparatus for controlling the first processing apparatus, the second processing apparatus, the third processing apparatus, and the fourth processing apparatus Comprising: The control apparatus: a) A step of embedding a sacrificial material into a recess formed in a substrate using the first processing apparatus; b) A step of covering the recess in which the sacrificial material is embedded with a first sealing film using the second processing apparatus; c) A step of decomposing the sacrificial material in the recess and removing the sacrificial material in the recess through the first sealing film by performing at least one of a process of heating the substrate and a process of irradiating the substrate with plasma using the third processing apparatus; d) A step of forming a second sealing film on the first sealing film using the fourth processing apparatus A semiconductor device manufacturing system that executes the above steps.

Explanation of Reference Numerals

[0084] G Gate valve W Substrate 10 Manufacturing system 11 VTM 110 Transfer robot 12 LLM 13 EFEM 130 Transfer robot 14 Load port 15 Control apparatus 20 Film forming apparatus 30 Plasma processing apparatus 40 Heating apparatus 60 Recess 61 Sacrificial material 62 First sealing film 63 Air gap 64 Second sealing film 65 Other film

Claims

1. a) a step of embedding a sacrificial material in a recess formed in a substrate; b) a step of covering the recess in which the sacrificial material is embedded with a first sealing film; c) a step of removing the sacrificial material in the recess through at least one of a process of heating the substrate and a process of irradiating the substrate with plasma, and removing the sacrificial material in the recess through the first sealing film; d) a step of forming a second sealing film on the first sealing film A method for manufacturing a semiconductor device including the above steps.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the thickness of the first sealing film is 1.6 nm or more and 2.4 nm or less.

3. The method for manufacturing a semiconductor device according to claim 1, wherein in step b), the temperature of the substrate is controlled at room temperature.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the thickness of the second sealing film is 1.2 nm or more.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the first sealing film and the second sealing film are silicon-containing films.

6. The method for manufacturing a semiconductor device according to claim 5, wherein the first sealing film and the second sealing film are silicon oxide films or silicon nitride films.

7. The method for manufacturing a semiconductor device according to claim 6, wherein the second sealing film is formed using a gas of DiIsoPropylAminoSilane (DIPAS).

8. e) A step executed between step b) and step c), wherein at least a part of the sacrificial material on the substrate is removed by performing at least one of a process of heating the substrate and a process of irradiating the substrate with plasma The method for manufacturing a semiconductor device according to claim 1, further including the above step.

9. The sacrificial material is a thermally decomposable organic material, In step a), a gas of a first monomer and a second monomer is supplied into a chamber into which the substrate is carried, and the sacrificial material is embedded in the recess by vapor deposition polymerization of the first monomer and the second monomer. The first monomer is isocyanate, The second monomer is amine, The method for manufacturing a semiconductor device according to claim 1, wherein the sacrificial material contains a urea bond.

10. A first processing device, A second processing device, A third processing device, A fourth processing device, A control device for controlling the first processing device, the second processing device, the third processing device, and the fourth processing device comprising, wherein the control device a) using the first processing device, a step of embedding a sacrificial material into a recess formed in a substrate; b) using the second processing device, a step of covering the recess in which the sacrificial material is embedded with a first sealing film; c) using the third processing device, performing at least one of a process of heating the substrate and a process of irradiating the substrate with plasma, decomposing the sacrificial material in the recess, and removing the sacrificial material in the recess through the first sealing film; d) using the fourth processing device, a step of forming a second sealing film on the first sealing film A semiconductor device manufacturing system that executes the above steps.

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