Focused ion beam device

Abstract

To provide a focused ion beam device capable of exhausting a gas remaining in a nozzle.SOLUTION: A focused ion beam device 100 irradiates a sample S with an ion beam to process the sample S, and includes a nozzle 42 which blows a gas 2 for forming a deposition film to the sample S from an air outlet 422, and a tank for supplying the gas 2 into the nozzle 42, wherein the nozzle 42 has an exhaust hole 426 for exhausting the gas 2 in the nozzle 42.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present invention relates to a focused ion beam apparatus.

Background Art

[0002] In a focused ion beam apparatus, a sample can be processed by scanning the surface of the sample with a focused ion beam. Further, in a focused ion beam apparatus, a deposition film can be formed on the surface of the sample by irradiating the sample with an electron beam or an ion beam while spraying a compound gas near the surface of the sample. In a cryo-focused ion beam apparatus (Cryo-FIB) for processing a cooled sample, a deposition film can be formed on the surface of the sample only by spraying a compound gas on the sample without irradiating the sample with an electron beam or an ion beam.

[0003] Patent Document 1 discloses a focused ion beam apparatus including a gas gun for spraying a compound gas on a sample. The gas gun includes a gas tank for storing a gas source and a gas nozzle. When forming a deposition film, the gas nozzle approaches from a retracted position to a height of several hundred micrometers from the processing point of the sample by an air cylinder. A gas seal plug is provided in the gas tank, and the gas can be sprayed on the sample by opening the gas seal plug.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the gas gun as described above, even when the gas tank is closed with the gas seal plug, gas remains in the gas nozzle.

Means for Solving the Problems

[0006] One aspect of the focused ion beam apparatus according to the present invention is a focused ion beam apparatus that irradiates a sample with an ion beam to process the sample, a nozzle that sprays a gas for forming a deposition film from a blowout port onto the sample, a tank that supplies gas into the nozzle, and includes the nozzle has an exhaust hole for exhausting the gas in the nozzle.

[0007] In such a focused ion beam apparatus, since the nozzle has an exhaust hole, the gas remaining in the nozzle can be exhausted.

Brief Description of the Drawings

[0008]

Figure 1

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Figure 17

Embodiments for Carrying Out the Invention

[0009] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. It should be noted that the embodiments described below do not unduly limit the content of the present invention described in the claims. Also, not all of the configurations described below are essential constituent elements of the present invention.

[0010] 1. First Embodiment 1.1. Focused Ion Beam Apparatus First, the focused ion beam apparatus according to the first embodiment will be described with reference to the drawings. FIG. 1 is a diagram showing an example of the configuration of a focused ion beam apparatus 100 according to the first embodiment.

[0011] As shown in FIG. 1, the focused ion beam apparatus 100 includes a scanning electron microscope (SEM) column 10, a focused ion beam (FIB) column 20, a sample stage 30, a cooling mechanism 32, and a gas injection device 40. The focused ion beam apparatus 100 includes an SEM column 10 and an FIB column 20, and can process and observe a sample S.

[0012] The SEM column 10 irradiates the sample S with an electron beam. The SEM column 10 forms an electron probe and scans the electron probe. The SEM column 10 includes an electron gun that emits an electron beam and an electron optical system that focuses the electron beam to form an electron probe and scans the formed electron probe. The electron beam emitted from the electron gun travels along the optical axis AS of the SEM column 10 and irradiates the sample S. In the focused ion beam apparatus 100, an SEM image can be obtained by scanning the sample S with the electron probe and detecting electrons emitted from the sample S with an electron detector (not shown).

[0013] The FIB column 20 irradiates the sample S with an ion beam. The FIB column 20 forms an ion beam and scans the ion beam. The FIB column 20 includes an ion gun that emits an ion beam and an ion optical system that focuses the ion beam and scans the focused ion beam. The ion beam emitted from the ion gun travels along the optical axis AF of the FIB column 20 and irradiates the sample S. In the focused ion beam apparatus 100, the sample S can be processed by scanning the sample S with the focused ion beam.

[0014] The sample stage 30 supports the sample S. The sample S supported by the sample stage 30 is disposed in the sample chamber 102. The sample chamber 102 is evacuated by an exhaust system 103 and maintained in a vacuum state (reduced pressure state). The exhaust system 103 includes, although not shown, a vacuum exhaust device, an exhaust pipe connecting the sample chamber 102 and the vacuum exhaust device, and a valve.

[0015] In the focused ion beam apparatus 100, processing of the sample S and observation of the sample S are performed at the intersection point P0 of the optical axis AS and the optical axis AF. The sample stage 30 includes a moving mechanism for moving the sample S in the horizontal and vertical directions and a tilting mechanism for tilting the sample S. The sample stage 30 may be configured to be capable of supporting a sample holder - that can be shared by the focused ion beam apparatus 100 and a transmission electron microscope.

[0016] The cooling mechanism 32 cools the sample stage 30. By cooling the sample stage 30, the sample S can be cooled. The cooling mechanism 32 includes, for example, a tube through which a gas flows and a refrigerant tank that cools the gas. The cooling mechanism 32 cools the sample stage 30, for example, by flowing a gas cooled by a refrigerant tank filled with liquid nitrogen through a tube thermally connected to the sample stage 30. Also, for example, the cooling mechanism 32 may include a refrigerant tank and a heat conduction wire that thermally connects the refrigerant tank and the sample stage 30. By connecting the refrigerant tank and the sample stage 30 with a heat conduction wire, the sample stage 30 can be cooled.

[0017] As described above, the focused ion beam apparatus 100 is provided with a cooling mechanism 32 that cools the sample stage 30, and can be used as a cryo-FIB (Cryo-FIB) that can perform processing while cooling the sample S. Therefore, with the focused ion beam apparatus 100, it is possible to process and observe a frozen biological sample, a battery material, or the like.

[0018] The gas injection device 40 sprays a gas for forming a deposition film onto the sample S. When forming a deposition film on the sample S at room temperature, while spraying the gas onto the sample S with the gas injection device 40, an electron beam or an ion beam is irradiated onto the sample S. Secondary electrons generated in the sample S by the irradiation of the electron beam or the ion beam decompose the gas into a deposition material and gas components. Thereby, the deposition material adheres to the sample S, and a deposition film can be formed on the sample S. Also, when forming a deposition film on the cooled sample S, the gas is sprayed onto the sample S without irradiating an electron beam or an ion beam. The gas adheres to the surface of the cooled sample S. Thereby, a deposition film can be formed.

[0019] 1.2. Gas Injection Device FIG. 2 is a cross-sectional view schematically showing a gas injection device 40. As shown in FIG. 2, the gas injection device 40 includes a nozzle 42, a reservoir tank 44, a valve 45, a housing tube 46, and a moving mechanism 48. FIG. 2 illustrates a state in which gas 2 is being blown onto a sample S by the nozzle 42.

[0020] A liquid or solid gas source 4 is housed in the reservoir tank 44. As the gas source 4, for example, a carbon compound, a tungsten compound, a platinum compound, or the like is used. The gas 2 generated from the gas source 4 is supplied from the reservoir tank 44 into the nozzle 42 through the valve 45. The gas 2 is a gas for forming a deposition film.

[0021] A valve 45 is provided between the nozzle 42 and the reservoir tank 44. By opening the valve 45, the gas 2 can be supplied into the nozzle 42 from the supply port 424 of the nozzle 42. Thereby, the gas 2 blows out from the blowout port 422 of the nozzle 42. Also, by closing the valve 45, the supply of the gas 2 into the nozzle 42 can be stopped. The valve 45 is opened and closed, for example, by the power of an air cylinder. Note that the configuration of the valve 45 is not particularly limited.

[0022] The nozzle 42 is a cylindrical member for blowing the gas 2 onto the sample S from the blowout port 422. In the focused ion beam device 100, by using a thin and long nozzle 42, the reservoir tank 44 can be arranged at a position away from the sample S. For example, in the example shown in FIG. 2, the reservoir tank 44 is arranged outside the sample chamber 102. Thereby, the gas source 4 can be easily replenished in the reservoir tank 44.

[0023] The nozzle 42 is connected to the reservoir tank 44 via the valve 45. The nozzle 42 is provided with a supply port 424 at the rear end thereof, and the gas 2 is supplied from the reservoir tank 44 into the nozzle 42 through the supply port 424. The supply port 424 is opened and closed by the valve 45.

[0024] At the tip of the nozzle 42, an air outlet 422 is provided. The gas 2 supplied from the supply port 424 provided at the rear end of the nozzle 42 passes through the nozzle 42 and blows out from the air outlet 422 provided at the tip of the nozzle 42.

[0025] The nozzle 42 is provided with an exhaust hole 426 for exhausting the gas 2 inside the nozzle 42. The exhaust hole 426 is provided between the air outlet 422 and the supply port 424. The exhaust hole 426 penetrates the side wall of the nozzle 42. In the illustrated example, two exhaust holes 426 are provided, but the number of exhaust holes 426 is not particularly limited. The diameter of the exhaust hole 426 is larger than the diameter of the air outlet 422.

[0026] The exhaust hole 426 communicates with the gap 6 between the nozzle 42 and the housing pipe 46. In the state where the nozzle 42 shown in FIG. 2 is arranged at the film forming position, the exhaust hole 426 communicates with the sealed chamber 6a formed by the O-ring 402 and the O-ring 404. The sealed chamber 6a is the space between the O-ring 402 and the O-ring 404. The O-ring 402 and the O-ring 404 each airtightly seal the space between the nozzle 42 and the housing pipe 46.

[0027] The housing pipe 46 houses the nozzle 42. The housing pipe 46 is a cylindrical member having a larger diameter than the nozzle 42. The nozzle 42 can move inside the housing pipe 46.

[0028] On the inner wall of the housing pipe 46, two grooves for O-rings are formed. The O-ring 402 is mounted in one groove, and the O-ring 404 is mounted in the other groove. The O-ring 402 is located closer to the tip side of the nozzle 42 than the O-ring 404. The nozzle 42 can slide inside the housing pipe 46 via the O-ring 402 and the O-ring 404.

[0029] The gap 6 between the nozzle 42 and the housing tube 46 is partitioned into a sealed chamber 6a and an exhaust chamber 6b by an O-ring 402 and an O-ring 404. The sealed chamber 6a is the space between the O-ring 402 and the O-ring 404. The exhaust chamber 6b constitutes an exhaust path for exhausting the gas 2 in the nozzle 42. The exhaust chamber 6b communicates with a through-hole 460 penetrating the side wall of the housing tube 46. The exhaust chamber 6b is the gap 6 on the rear end side of the nozzle 42 rather than the O-ring 404.

[0030] The housing tube 46 is provided with a through-hole 460. In the illustrated example, two through-holes 460 are provided, but the number of through-holes 460 is not particularly limited. The diameter of the through-hole 460 is larger than the diameter of the air outlet 422. Also, the diameter of the through-hole 460 is larger than the diameter of the exhaust hole 426. One opening of the through-hole 460 is connected to the exhaust chamber 6b, and the other opening of the through-hole 460 is connected to the sample chamber 102.

[0031] The housing tube 46 is connected to a flange 47. The flange 47 is mounted in a hole provided in the housing 104 constituting the sample chamber 102. The space between the flange 47 and the housing 104 is hermetically sealed by an O-ring 106.

[0032] The moving mechanism 48 supports the nozzle 42 so as to be movable between a film forming position and a retracted position. The film forming position is in the vicinity of the sample S and is a position where the gas 2 can be sprayed from the air outlet 422 onto the sample S. The retracted position is a position different from the film forming position and is a position away from the sample S. The distance between the retracted position and the sample S is larger than the distance between the film forming position and the sample S.

[0033] The moving mechanism 48 moves the nozzle 42. The moving mechanism 48 is, for example, an air cylinder The nozzle 42 is linearly moved along the central axis of the nozzle 42. The configuration of the moving mechanism 48 is not particularly limited as long as the nozzle 42 can be moved between the film forming position and the retracted position. The moving mechanism 48 is, for example, a uniaxial actuator including a driving device such as an air cylinder or a motor and a power transmission mechanism such as a linear guide. Note that the moving mechanism 48 may be a mechanism for manually moving the nozzle 42.

[0034] 1.3. Operation FIGS. 3 and 4 are diagrams for explaining the operation of the focused ion beam apparatus 100. FIG. 3 illustrates a state in which the nozzle 42 is located at the film forming position. FIG. 4 illustrates a state in which the nozzle 42 is located at the retracted position.

[0035] In the focused ion beam apparatus 100, the moving mechanism 48 can move the nozzle 42 between the film forming position and the retracted position. When depositing a deposition film on the sample S, the nozzle 42 is arranged at the film forming position. Thereby, the blowout port 422 of the nozzle 42 can be arranged near the sample S. By opening the valve 45 at the film forming position, the gas 2 is blown out from the blowout port 422, and a deposition film can be formed on the sample S. Also, by closing the valve 45, film formation can be stopped. After closing the valve 45, the nozzle 42 is arranged at the retracted position. Thereby, the nozzle 42 can be arranged at a position away from the sample S, and the space near the sample S can be effectively utilized.

[0036] Since the housing tube 46 is fixed, by moving the nozzle 42, the distance between the through hole 460 provided in the housing tube 46 and the exhaust hole 426 provided in the nozzle 42 changes. Specifically, the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is arranged at the retracted position is smaller than the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is arranged at the film forming position.

[0037] As shown in FIG. 3, when the nozzle 42 is disposed at the film forming position, the exhaust hole 426 communicates with the sealed chamber 6a. Therefore, the exhaust path is closed. Accordingly, when the nozzle 42 is disposed at the film forming position, the amount of the gas 2 discharged from the exhaust hole 426 is extremely small, and most of the gas 2 supplied from the supply port 424 blows out from the blowout port 422. Thereby, the gas 2 can be sprayed onto the sample S, and a deposition film can be formed on the sample S.

[0038] As shown in FIG. 4, when the nozzle 42 is disposed at the retracted position, the exhaust hole 426 communicates with the exhaust chamber 6b. Therefore, the exhaust hole 426, the exhaust chamber 6b, and the through hole 460 constitute an exhaust path. Accordingly, by moving the nozzle 42 to the retracted position, the exhaust path is opened, and the gas 2 remaining in the nozzle 42 can be discharged into the sample chamber 102 through the exhaust path.

[0039] When the nozzle 42 is disposed at the retracted position, the exhaust hole 426 and the through hole 460 overlap when viewed from a direction along the central axis of the exhaust hole 426. Therefore, the gas 2 discharged from the exhaust hole 426 can be efficiently exhausted into the sample chamber 102 through the through hole 460.

[0040] Here, the diameter of the exhaust hole 426 is larger than the diameter of the blowout port 422. Also, the diameter of the through hole 460 is larger than the diameter of the blowout port 422. Also, a plurality of exhaust holes 426 and through holes 460 are provided respectively. Thus, by increasing the diameters of the exhaust hole 426 and the through hole 460 and providing a plurality of exhaust holes 426 and through holes 460, the conductance of the exhaust path can be increased. Note that conductance is an index of the ease of gas flow, and at the same pressure difference, the larger the conductance, the larger the gas flow rate.

[0041] In the focused ion beam apparatus 100, when the nozzle 42 is disposed at the retracted position, the conductance of the exhaust path is the conductance of the tip portion of the nozzle 42 from the exhaust hole 426 to the blowout port 422. It is larger than the ductance. Therefore, when the nozzle 42 is disposed at the retracted position, the amount of the gas 2 discharged from the exhaust path can be made larger than the amount of the gas 2 discharged from the blowout port 422.

[0042] The through hole 460 does not face the direction of the sample S. That is, the central axis of the through hole 460 does not intersect with the sample S. Here, the degree of vacuum in the sample chamber 102 is in the molecular flow region of about 10 -5 Pa to 10 -6 Pa. In the molecular flow region, gas molecules fly almost straight. Therefore, the number of gas molecules discharged from the through hole 460 into the sample chamber 102 and heading toward the sample S can be made extremely small. As a result, the possibility that the gas 2 exhausted from the through hole 460 to the sample chamber 102 adheres to the sample S can be reduced.

[0043] 1.4. Effects The focused ion beam apparatus 100 includes a nozzle 42 that blows the gas 2 for forming the deposition film onto the sample S from the blowout port 422, and a reservoir tank 44 that supplies the gas 2 into the nozzle 42. Further, the nozzle 42 has an exhaust hole 426 for exhausting the gas 2 in the nozzle 42. Therefore, in the focused ion beam apparatus 100, the gas 2 remaining in the nozzle 42 can be exhausted.

[0044] Since the nozzle 42 is thin and long, even when the valve 45 is closed, the gas 2 remains in the nozzle 42. When this remaining gas 2 leaks from the nozzle 42 and reaches the surface of the sample S, a deposition film is formed on the surface of the sample S unintentionally. In particular, in cryo-FIB, a deposition film is formed without irradiating an electron beam or an ion beam. Therefore, due to the gas 2 leaking from the nozzle 42, a deposition film may be formed thickly on the surface of the sample S to such an extent that it affects the observation and analysis by an electron microscope. Also, even for a sample S at room temperature, depending on the type of the gas 2, a deposition film may be formed thickly on the surface of the sample S.

[0045] On the other hand, in the focused ion beam apparatus 100, since the gas 2 remaining in the nozzle 42 can be exhausted, it is possible to prevent the deposition film from being formed thickly on the surface of the sample S to such an extent that it affects the observation and analysis by the electron microscope.

[0046] Also, if the gas 2 remains in the nozzle 42, when forming the deposition film on the surface of the sample S, the components of the gas 2 remaining in the nozzle 42 are sprayed onto the sample S, and the high-purity gas 2 cannot be sprayed onto the sample S. On the other hand, in the focused ion beam apparatus 100, since the gas 2 remaining in the nozzle 42 can be exhausted, the inside of the nozzle 42 can be kept clean. Therefore, at the time of film formation, high-purity gas 2 can be sprayed onto the sample S.

[0047] The focused ion beam apparatus 100 includes a moving mechanism 48 that enables the nozzle 42 to move between a film formation position where the gas 2 can be sprayed onto the sample S from the spray outlet 422 and a retracted position different from the film formation position. Therefore, in the focused ion beam apparatus 100, at the time of film formation, the gas 2 can be efficiently sprayed onto the sample S, and at the time of retraction, the nozzle 42 can be arranged at a position away from the sample S, and the space near the sample S can be efficiently utilized.

[0048] In the focused ion beam apparatus 100, the exhaust hole 426 constitutes an exhaust path for exhausting the gas 2 in the nozzle 42, the exhaust path is closed when the nozzle 42 is arranged at the film formation position, and the exhaust path is opened when the nozzle 42 is arranged at the retracted position. Therefore, in the focused ion beam apparatus 100, at the time of film formation, the gas 2 blows out from the spray outlet 422, and at the time of retraction, the gas 2 remaining in the nozzle 42 can be exhausted from the exhaust hole 426.

[0049] In the focused ion beam apparatus 100, when the nozzle 42 is disposed at the film formation position, the exhaust hole 426 communicates with the sealed chamber 6a that is sealed, and when the nozzle 42 is disposed at the retracted position, the exhaust hole 426 communicates with the exhaust chamber 6b that constitutes an exhaust path for exhausting the gas 2 in the nozzle 42. Therefore, in the focused ion beam apparatus 100, by moving the nozzle 42 from the film formation position to the retracted position, the gas 2 remaining in the nozzle 42 can be exhausted. Thus, in the focused ion beam apparatus 100, since the gas 2 remaining in the nozzle 42 can be automatically exhausted by disposing the nozzle 42 at the retracted position, an operation for exhausting the gas 2 remaining in the nozzle 42 is unnecessary.

[0050] In the focused ion beam apparatus 100, the exhaust path communicates with the sample chamber 102 in which the sample S is disposed. Therefore, in the focused ion beam apparatus 100, it is not necessary to prepare a new exhaust system to constitute the exhaust path, and thus the gas 2 remaining in the nozzle 42 can be exhausted with a simple configuration.

[0051] The focused ion beam apparatus 100 includes a housing tube 46 that houses the nozzle 42, and a gap 6 between the housing tube 46 and the nozzle 42 constitutes an exhaust path for exhausting the gas 2 in the nozzle 42. Therefore, in the focused ion beam apparatus 100, an exhaust path can be formed with a simple configuration.

[0052] In the focused ion beam apparatus 100, the housing tube 46 is provided with a through hole 460 that communicates with the gap 6. Further, the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is disposed at the retracted position is smaller than the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is disposed at the film formation position. Therefore, in the focused ion beam apparatus 100, the gas 2 exhausted from the exhaust hole 426 can be efficiently discharged from the through hole 460.

[0053] In the focused ion beam apparatus 100, the through hole 460 does not face the direction of the sample S. Therefore, in the focused ion beam apparatus 100, the possibility that the gas 2 discharged from the through hole 460 to the sample chamber 102 reaches the sample S can be reduced.

[0054] In the focused ion beam apparatus 100, a moving mechanism 48 is included as a control mechanism for changing the conductance of an exhaust path for exhausting the gas 2 in the nozzle 42. In the moving mechanism 48, by moving the nozzle 42, the exhaust hole 426 can be communicated with the sealed chamber 6a or the exhaust hole 426 can be communicated with the exhaust chamber 6b. In this way, the moving mechanism 48 functions as a control mechanism for changing the conductance of the exhaust path. Therefore, in the focused ion beam apparatus 100, the amount of the gas 2 blown out from the blowout port 422 and the amount of the gas 2 discharged from the exhaust hole 426 can be controlled.

[0055] In the focused ion beam apparatus 100, the blowout port 422 is provided at the tip of the nozzle 42. Therefore, in the focused ion beam apparatus 100, the blowout port 422 can be brought close to the sample S. Further, in the focused ion beam apparatus 100, the exhaust hole 426 penetrates the side wall of the nozzle 42. Therefore, in the focused ion beam apparatus 100, the gas 2 remaining in the nozzle 42 can be efficiently exhausted.

[0056] In the focused ion beam apparatus 100, the diameter of the exhaust hole 426 is larger than the diameter of the blowout port 422. Therefore, in the focused ion beam apparatus 100, the gas 2 remaining in the nozzle 42 can be efficiently discharged from the exhaust hole 426.

[0057] 1.5. Modification FIGS. 5 and 6 are cross-sectional views schematically showing a modification of the focused ion beam apparatus 100. Note that FIG. 5 illustrates a state in which the nozzle 42 is disposed at the film formation position, and FIG. 6 illustrates a state in which the nozzle 42 is disposed at the retracted position.

[0058] In the above-described first embodiment, the O-ring 402 and the O-ring 404 were respectively mounted in grooves for O-rings provided on the inner wall of the housing tube 46. In contrast, in this modification, as shown in FIGS. 5 and 6, the O-ring 402 and the O-ring 404 are respectively mounted in grooves formed on the outer peripheral surface of the nozzle 42.

[0059] The O-rings 402 and 404 move as the nozzle 42 moves. Therefore, the space 6c between the O-ring 402 and the O-ring 404 moves as the nozzle 42 moves. An exhaust hole 426 is provided between the O-ring 402 and the O-ring 404. The exhaust hole 426 communicates with the space 6c.

[0060] As shown in FIG. 5, when the nozzle 42 is disposed at the film forming position, the space 6c between the O-ring 402 and the O-ring 404 does not communicate with the through hole 460, and the exhaust path is closed. Therefore, most of the gas 2 supplied from the supply port 424 blows out from the blowout port 422.

[0061] On the other hand, as shown in FIG. 6, when the nozzle 42 is disposed at the retracted position, the space 6c communicates with the through hole 460, and the exhaust path opens. Therefore, the gas 2 remaining in the nozzle 42 can be discharged into the sample chamber 102 through the exhaust path.

[0062] Thus, in the focused ion beam apparatus according to this modification, as in the focused ion beam apparatus 100, when the nozzle 42 is disposed at the retracted position, the gas 2 remaining in the nozzle 42 can be discharged into the sample chamber 102 through the exhaust hole 426 and the through hole 460.

[0063] 2. Second Embodiment 2.1. Focused Ion Beam Apparatus Next, a focused ion beam apparatus according to the second embodiment will be described with reference to the drawings. FIG. 7 is a diagram showing an example of the configuration of a focused ion beam apparatus 200 according to the second embodiment. FIG. 8 is a cross-sectional view schematically showing the gas injection device 40 of the focused ion beam apparatus 200.

[0064] Hereinafter, in the focused ion beam apparatus 200 according to the second embodiment, members having the same functions as the constituent members of the focused ion beam apparatus 100 according to the first embodiment are denoted by the same reference numerals, and detailed descriptions thereof are omitted.

[0065] In the focused ion beam apparatus 100 shown in FIG. 1, the gas 2 remaining in the nozzle 42 was exhausted into the sample chamber 102 through the exhaust path.

[0066] On the other hand, the focused ion beam apparatus 200 shown in FIG. 7 includes an exhaust system 103 (hereinafter also referred to as the "first exhaust system") for exhausting the sample chamber 102 and a second exhaust system 202 for exhausting the inside of the nozzle 42. The second exhaust system 202 is an exhaust system independent of the first exhaust system 103. The second exhaust system 202 is not in communication with the sample chamber 102. Thus, the focused ion beam apparatus 200 is provided with a dedicated exhaust system for exhausting the gas 2 remaining in the nozzle 42.

[0067] As shown in FIG. 8, an exhaust pipe 462 communicating with the gap 6 between the nozzle 42 and the housing tube 46 is connected to the housing tube 46. The exhaust pipe 462 constitutes the second exhaust system 202. The second exhaust system 202 includes, although not shown, a vacuum exhaust device, the exhaust pipe 462, and a valve. Note that the vacuum exhaust device of the first exhaust system 103 and the vacuum exhaust device of the second exhaust system 202 may be common. It may be.

[0068] 2.2. Operation FIGS. 9 and 10 are diagrams for explaining the operation of the focused ion beam apparatus 200. FIG. 9 shows a state where the nozzle 42 is located at the film forming position. FIG. 10 shows a state where the nozzle 42 is located at the retracted position.

[0069] As shown in FIG. 9, when the nozzle 42 is disposed at the film forming position, the exhaust hole 426 communicates with the sealed chamber 6a, so the exhaust path is closed. Therefore, when the nozzle 42 is disposed at the film forming position, most of the gas 2 supplied from the supply port 424 blows out from the blowout port 422.

[0070] As shown in FIG. 10, when the nozzle 42 is disposed at the retracted position, the exhaust hole 426 communicates with the exhaust chamber 6b. Therefore, the exhaust hole 426, the exhaust chamber 6b, and the exhaust pipe 462 constitute an exhaust path. Accordingly, by moving the nozzle 42 to the retracted position, the exhaust path is opened, and the gas 2 remaining in the nozzle 42 can be discharged from the second exhaust system 202 through the exhaust path.

[0071] 2.3. Effect In the focused ion beam apparatus 200, similar to the focused ion beam apparatus 100 described above, the gas 2 remaining in the nozzle 42 can be exhausted. Further, the focused ion beam apparatus 200 includes a first exhaust system 103 for exhausting the sample chamber 102 and a second exhaust system 202 for exhausting the inside of the nozzle 42. Therefore, in the focused ion beam apparatus 200, the gas 2 remaining in the nozzle 42 can be discharged outside the sample chamber 102. Accordingly, in the focused ion beam apparatus 200, it is possible to prevent a thick deposition film from being formed on the sample S.

[0072] 3. Third Embodiment 3.1. Focused Ion Beam Apparatus Next, the focused ion beam apparatus according to the third embodiment will be described with reference to the drawings. FIG. 11 is a diagram showing an example of the configuration of a focused ion beam apparatus 300 according to the third embodiment. Hereinafter, in the focused ion beam apparatus 300 according to the third embodiment, members having the same functions as the constituent members of the focused ion beam apparatus 100 according to the first embodiment and the focused ion beam apparatus 200 according to the second embodiment are denoted by the same reference numerals, and detailed descriptions thereof are omitted.

[0073] In the focused ion beam apparatus 200 shown in FIGS. 7 to 10 described above, the gas 2 remaining in the nozzle 42 is exhausted using the second exhaust system 202. In contrast, in the focused ion beam apparatus 300, as shown in FIG. 11, the gas 2 remaining in the nozzle 42 is exhausted using the cold trap 310.

[0074] The cold trap 310 includes cooling fins 312 and a tank 314 filled with a refrigerant for cooling the cooling fins 312. The cold trap 310 is a device that cools the cooling fins 312 to condense gas molecules. The cooling fins 312 are provided in the exhaust chamber 6b. The tank 314 contains, for example, liquid nitrogen or liquid helium as the refrigerant.

[0075] In the focused ion beam apparatus 300, when the nozzle 42 is disposed at the retracted position, the gas 2 remaining in the nozzle 42 can be condensed in the cold trap 310 via the exhaust hole 426 and the exhaust chamber 6b. Thereby, the gas 2 remaining in the nozzle 42 can be exhausted.

[0076] 3.2. Operation The operation of the focused ion beam apparatus 300 is the same as that of the focused ion beam apparatus 200 described above, except that when the nozzle 42 is disposed at the retracted position, the cold trap 310 is used to exhaust the gas 2 remaining in the nozzle 42, and the description thereof is omitted.

[0077] 3.3. Effect In the focused ion beam apparatus 300, similar to the focused ion beam apparatus 200 described above, the gas 2 remaining in the nozzle 42 is not discharged into the sample chamber 102.

[0078] 4. Fourth Embodiment 4.1. Focused Ion Beam Apparatus Next, a focused ion beam apparatus according to the fourth embodiment will be described with reference to the drawings. FIG. 12 is a diagram showing an example of the configuration of a focused ion beam apparatus 400 according to the fourth embodiment. Hereinafter, in the focused ion beam apparatus 400 according to the fourth embodiment, members having the same functions as the constituent members of the focused ion beam apparatus 100 according to the first embodiment are denoted by the same reference numerals, and detailed descriptions thereof are omitted.

[0079] In the focused ion beam apparatus 100, when the nozzle 42 is disposed at the film forming position, the exhaust hole 426 communicates with the sealed chamber 6a to close the exhaust path, and when the nozzle 42 is disposed at the retracted position, the exhaust hole 426 communicates with the exhaust chamber 6b to open the exhaust path.

[0080] On the other hand, in the focused ion beam apparatus 400, by moving the nozzle 42, the distance of the gap 6 connecting the exhaust hole 426 and the through hole 460 is changed to change the conductance of the exhaust path. Specifically, when the nozzle 42 is disposed at the film forming position, the distance between the exhaust hole 426 and the through hole 460 becomes large, and the conductance of the exhaust path becomes smaller than the conductance of the tip portion of the nozzle 42. Further, when the nozzle 42 is disposed at the retracted position, the distance between the exhaust hole 426 and the through hole 460 becomes small, and the conductance of the exhaust path becomes larger than the conductance of the tip portion of the nozzle 42.

[0081] The focused ion beam apparatus 400 does not have an O-ring 404, and the sealed chamber 6a is not formed in the gap 6 between the nozzle 42 and the housing tube 46. Further, in the focused ion beam apparatus 400, the gap 6 is narrow and the gas 2 hardly flows. That is, the gap 6 has a small exhaust conductance.

[0082] 4.2. Operation FIGS. 13 and 14 are diagrams for explaining the operation of the focused ion beam apparatus 400. FIG. 13 illustrates a state where the nozzle 42 is located at the film forming position. FIG. 14 illustrates a state where the nozzle 42 is located at the retracted position.

[0083] As shown in FIG. 13, when the nozzle 42 is disposed at the film forming position, the exhaust hole 426 communicates with the gap 6. At this time, the exhaust path is constituted by the exhaust hole 426, the gap 6, and the through hole 460. Here, when the nozzle 42 is disposed at the film forming position, the distance between the exhaust hole 426 and the through hole 460 is large, and the length of the gap 6 that serves as the exhaust path of the gas 2 connecting the exhaust hole 426 and the through hole 460 is long. Therefore, the conductance of the tip portion of the nozzle 42 becomes larger than the conductance of the exhaust path. Accordingly, when the nozzle 42 is disposed at the film forming position, most of the gas 2 supplied from the supply port 424 blows out from the blowout port 422.

[0084] As shown in FIG. 14, when the nozzle 42 is disposed at the retracted position, the exhaust hole 426 communicates with the gap 6 in the same manner as when the nozzle 42 is disposed at the film forming position. Here, the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is disposed at the retracted position is smaller than the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is disposed at the film forming position. Thereby, the length of the gap 6 that serves as the exhaust path of the gas 2 connecting the exhaust hole 426 and the through hole 460 can be shortened. Therefore, the conductance of the exhaust path can be made larger than the conductance of the tip portion of the nozzle 42. Accordingly, when the nozzle 42 is disposed at the retracted position, the gas 2 remaining in the nozzle 42 can be discharged into the sample chamber 102 through the exhaust path.

[0085] In the example shown in FIG. 13, when the nozzle 42 is disposed at the film forming position, the exhaust hole 426 and the through hole 460 do not overlap when viewed from the direction along the central axis of the exhaust hole 426. On the other hand, in the example shown in FIG. 14, when the nozzle 42 is disposed at the retracted position, the exhaust hole 426 and the through hole 460 overlap when viewed from the direction along the central axis of the exhaust hole 426. Therefore, when the nozzle 42 is disposed at the retracted position, the gas 2 discharged from the exhaust hole 426 can be efficiently discharged into the sample chamber 102 through the through hole 460.

[0086] As described above, when the nozzle 42 is disposed at the film forming position, the conductance of the tip portion of the nozzle 42 becomes larger than the conductance of the exhaust path. Therefore, the amount of the gas 2 blown out from the blowout port 422 can be made larger than the amount of the gas 2 discharged from the exhaust hole 426. Further, when the nozzle 42 is disposed at the retracted position, the conductance of the exhaust path becomes larger than the conductance of the tip portion of the nozzle 42. Therefore, the amount of the gas 2 discharged from the exhaust hole 426 can be made larger than the amount of the gas 2 blown out from the blowout port 422. The moving mechanism 48 that moves the nozzle 42 functions as a control mechanism that changes the conductance of the exhaust path.

[0087] 4.3. Effect In the focused ion beam apparatus 400, the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is disposed at the retracted position is smaller than the distance between the exhaust hole 426 and the through hole 460 when the nozzle 42 is disposed at the film forming position. Therefore, in the focused ion beam apparatus 400, the conductance of the exhaust path when the nozzle 42 is disposed at the retracted position can be made larger than the conductance of the exhaust path when the nozzle 42 is disposed at the film forming position. Accordingly, in the focused ion beam apparatus 400, similar to the above-described focused ion beam apparatus 100, when the nozzle 42 is disposed at the retracted position, the gas 2 remaining in the nozzle 42 can be exhausted.

[0088] 5. Fifth Embodiment 5.1. Focused Ion Beam Apparatus Next, a focused ion beam apparatus according to the fifth embodiment will be described with reference to the drawings. FIG. 15 is a diagram showing an example of the configuration of a focused ion beam apparatus 500 according to the fifth embodiment. Hereinafter, in the focused ion beam apparatus 500 according to the fifth embodiment, members having the same functions as the constituent members of the focused ion beam apparatus 100 according to the first embodiment and the focused ion beam apparatus 200 according to the second embodiment are denoted by the same reference numerals, and detailed descriptions thereof are omitted.

[0089] In the focused ion beam apparatus 100 shown in FIGS. 1 to 4 described above, the gas injection device 40 had a moving mechanism 48 for moving the nozzle 42. On the other hand, in the focused ion beam apparatus 500, as shown in FIG. 15, it does not include the moving mechanism 48, and the position of the nozzle 42 is fixed.

[0090] Further, in the focused ion beam apparatus 100, the gap 6 between the nozzle 42 and the housing tube 46 was partitioned into a sealed chamber 6a and an exhaust chamber 6b. On the other hand, in the focused ion beam apparatus 500, the gap 6 is not partitioned and is a single space. An exhaust hole 426 communicates with the gap 6. Also, an exhaust pipe 462 communicates with the gap 6.

[0091] As shown in FIG. 15, the gas injection device 40 includes an exhaust pipe 462 connected to the gap 6 and a valve 464 provided in the exhaust pipe 462. The exhaust pipe 462 and the valve 464 constitute the second exhaust system 202.

[0092] The valve 464 is, for example, a gate valve that partitions the inside of the exhaust pipe 462 and opens and closes. The exhaust path of the gas 2 remaining in the nozzle 42 is constituted by the exhaust hole 426 and the gap 6. By opening the valve 464, the exhaust pipe 462 communicates with the gap 6, and the gas 2 remaining in the nozzle 42 can be exhausted by the second exhaust system 202 through the exhaust path. Also, by closing the valve 464, the second exhaust system 202 and the exhaust path do not communicate, and the exhaust in the nozzle 42 can be stopped.

[0093] 5.2. Operation FIGS. 16 and 17 are diagrams for explaining the operation of the focused ion beam apparatus 400. FIG. 16 is a cross-sectional view schematically showing the gas injection device 40 when forming a deposition film on the sample S. FIG. 17 is a cross-sectional view schematically showing the gas injection device 40 when exhausting the gas 2 remaining in the nozzle 42.

[0094] When forming a deposition film, close valve 464 to close the exhaust path. As a result, as shown in FIG. 16, gas 2 is not discharged from exhaust hole 426, and most of the gas 2 supplied from supply port 424 blows out from blowout port 422. Thereby, gas 2 can be blown onto sample S, and a deposition film can be formed on sample S.

[0095] When exhausting the gas 2 remaining in nozzle 42, open valve 464 to open the exhaust path. As a result, as shown in FIG. 17, the gas 2 remaining in nozzle 42 can be discharged from the second exhaust system 202 through the exhaust path.

[0096] 5.3. Effect The focused ion beam apparatus 500 includes a valve 464 for opening and closing the exhaust path. Therefore, in the focused ion beam apparatus 500, similar to the focused ion beam apparatus 100, the gas 2 remaining in nozzle 42 can be exhausted.

[0097] 5.4. Modification The above-described focused ion beam apparatus 500 includes a valve 464 for opening and closing the exhaust path, but the valve 464 may be a valve for adjusting the flow rate. The valve 464 is, for example, a needle valve capable of adjusting the flow rate. Note that the valve 464 is not particularly limited as long as it can adjust the flow rate, and a known flow rate adjustment valve such as an orifice capable of adjusting the flow rate can be used.

[0098] When forming a deposition film, adjust valve 464 so that the conductance of the exhaust path is smaller than the conductance of the tip portion of nozzle 42. Thereby, most of the gas 2 supplied from supply port 424 blows out from blowout port 422, and a deposition film can be formed on sample S.

[0099] When discharging the gas 2 remaining in the nozzle 42, the valve 464 is adjusted so that the conductance of the exhaust path becomes larger than the conductance of the tip portion of the nozzle 42. Thereby, the gas 2 remaining in the nozzle 42 can be discharged from the second exhaust system 202 through the exhaust path.

[0100] Thus, the valve 464 functions as a control mechanism for changing the conductance of the exhaust path.

[0101] In the above-described modification, the conductance of the exhaust path is changed by using the valve 464 whose flow rate can be adjusted. However, the mechanism for changing the conductance of the exhaust path is not limited to the valve. For example, the conductance of the exhaust path may be changed by making the diameter of the exhaust hole 426 or the size of the gap 6 variable.

[0102] 6. Others Note that the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the gist of the present invention.

[0103] In the above-described first embodiment, the focused ion beam apparatus 100 includes the SEM column 10 and the FIB column 20. However, the focused ion beam apparatus 100 may not include the SEM column 10. The same applies to the focused ion beam apparatuses according to the second to fifth embodiments, and they may not include the SEM column 10.

[0104] Note that the above-described embodiments and modifications are examples, and the present invention is not limited thereto. For example, each embodiment and each modification can be combined as appropriate.

[0105] The present invention is not limited to the above-described embodiments, and various modifications are further possible. For example, the present invention includes a configuration that is substantially the same as the configuration described in the embodiments. The substantially same configuration is, for example, a configuration having the same functions, methods, and results, or a configuration having the same purposes and effects. Further, the present invention includes a configuration in which a non-essential part of the configuration described in the embodiments is replaced. Further, the present invention includes a configuration having the same operational effects as the configuration described in the embodiments or a configuration capable of achieving the same purpose. Further, the present invention includes a configuration in which a known technique is added to the configuration described in the embodiments.

Explanation of Reference Numerals

[0106] 6... gap, 6a... sealed chamber, 6b... exhaust chamber, 6c... space, 10... SEM column, 20... FIB column, 30... sample stage, 32... cooling mechanism, 40... gas injection device, 42... nozzle, 44... reservoir tank, 45... valve, 46... housing tube, 47... flange, 48... moving mechanism, 100... focused ion beam device, 102... sample chamber, 103... first exhaust system, 104... housing, 106... O-ring, 200... focused ion beam device, 202... second exhaust system, 300... focused ion beam device, 310... cold trap, 312... cooling fins, 314... tank, 400... focused ion beam device, 402... O-ring, 404... O-ring, 422... blowout port, 424... supply port, 426... exhaust hole, 460... through hole, 462... exhaust pipe, 464... valve, 500... focused ion beam device

Claims

1. A focused ion beam apparatus for irradiating a sample with an ion beam to process the sample, comprising: a nozzle for spraying a gas for forming a deposition film from a blowout port onto the sample; a tank for supplying gas into the nozzle; wherein the nozzle has an exhaust hole for exhausting the gas in the nozzle, and it is a focused ion beam apparatus.

2. In claim 1, the focused ion beam apparatus further includes a moving mechanism for making the nozzle movable between a film-forming position where gas can be sprayed from the blowout port onto the sample and a retracted position different from the film-forming position.

3. In claim 2, the exhaust hole constitutes an exhaust path for exhausting the gas in the nozzle, when the nozzle is disposed at the film-forming position, the exhaust path is closed, when the nozzle is disposed at the retracted position, the exhaust path is opened, and it is a focused ion beam apparatus.

4. In claim 2, when the nozzle is disposed at the film-forming position, the exhaust hole communicates with a sealed chamber, when the nozzle is disposed at the retracted position, the exhaust hole communicates with an exhaust chamber that constitutes an exhaust path for exhausting the gas in the nozzle, and it is a focused ion beam apparatus.

5. In claim 3 or 4, the exhaust path communicates with a sample chamber where the sample is disposed, and it is a focused ion beam apparatus.

6. In claim 3 or 4, a first exhaust system for exhausting the sample chamber where the sample is disposed; a second exhaust system for exhausting the inside of the nozzle; and it includes these, and it is a focused ion beam apparatus.

7. In claim 2, it includes a housing tube for housing the nozzle, the space between the nozzle and the housing tube constitutes an exhaust path for exhausting the gas in the nozzle, and it is a focused ion beam apparatus.

8. In claim 7, the housing tube is provided with a through hole communicating with the space, the distance between the exhaust hole and the through hole when the nozzle is disposed at the retracted position is smaller than the distance between the exhaust hole and the through hole when the nozzle is disposed at the film-forming position, and it is a focused ion beam apparatus.

9. In claim 8, the through hole does not face the direction of the sample, and it is a focused ion beam apparatus.

10. In claim 1 or 2, it includes a control mechanism for changing the conductance of an exhaust path for exhausting the gas in the nozzle, and it is a focused ion beam apparatus.

11. In any one of claims 1 to 4, The blowout port is provided at the tip of the nozzle, a focused ion beam apparatus.

12. In any one of claims 1 to 4, The exhaust hole penetrates the side wall of the nozzle, a focused ion beam apparatus.

13. In any one of claims 1 to 4, The diameter of the exhaust hole is larger than the diameter of the blowout port, a focused ion beam apparatus.

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