Resist peeling and processing solution for seed etching and processing method

Abstract

To provide, in one aspect, a processing solution capable of efficiently and simultaneously performing peeling of a negative type dry film resist and etching a metal seed layer.SOLUTION: This disclosure relates to, in one aspect, a processing solution for simultaneously performing the peeling of a negative-type dry film resist layer and the etching of a metal seed layer in the manufacture of an electronic substrate using a substrate that has the negative-type dry film resist layer and the metal seed layer, that is, a processing solution for resist peeling and seed etching comprising an organic alkali (Component A), a primary ammonium source (Component B), and an oxidizing agent (Component C).SELECTED DRAWING: None

Description

Technical Field

[0001] The present disclosure relates to a treatment liquid and a treatment method for resist stripping and seed etching.

Background Art

[0002] In recent years, in personal computers and various electronic devices, power consumption has been reduced, processing speed has been increased, and miniaturization has advanced. Wiring such as package substrates mounted on these devices has become finer year by year. For the formation of such fine wiring and connection terminals such as pillars and bumps, the metal mask method has been mainly used so far, but due to its low versatility and difficulty in coping with the miniaturization of wiring and the like, it is gradually changing to other new methods.

[0003] As one of the new methods, a method of using a dry film resist as a thick film resin mask instead of a metal mask is known. Although this resin mask is finally peeled off and removed, an alkaline stripping cleaner is used at that time.

[0004] For example, Patent Document 1 proposes a stock composition containing a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base, a corrosion inhibitor, and at least two or more polybasic acids or combinations thereof as a composition for removing residues after etching in semiconductor manufacturing, and a composition in which at least one of the polybasic acids or salts thereof contains phosphorus. Patent Document 2 proposes a cleaning liquid for semiconductor devices containing an oxidizing agent, a metal etchant, and a surfactant, having a pH of 10 to 14, as a cleaning liquid for removing photoresist, etching residues, antireflection films, ashing residues, etc. present on a substrate in semiconductor device manufacturing. Patent Document 3 proposes a stripping solution for a semiconductor device, which is an aqueous solution containing a quaternary ammonium hydroxide, an oxidizing agent, an alkanolamine, and an alkali metal hydroxide, for removing photoresist, antireflection film, etching residue, etc. present on a substrate in the manufacturing process of the semiconductor device. Patent Document 4 proposes a cleaning solution for a copper wiring semiconductor device, which is a cleaning solution containing water, urea and / or ethylene urea, an organic acid and / or its salt, and an alkali component. Patent Document 5 proposes a resist stripping composition for use as a resist stripper in the manufacturing method of an electronic substrate, which contains a water-soluble amine and / or ammonium compound, an oxidizing agent, a radical scavenger, and water. Patent Document 6 proposes a manufacturing method of an electronic substrate having a copper wiring formation step, a resist collapse step, and a resist stripping step, in which a collapse agent composition having a pH of 2 to 8 containing an oxidizing agent is used in the resist collapse step, and a stripping agent composition having a pH of 9 to 14 containing a quaternary ammonium compound and / or a water-soluble amine compound, an oxidizing agent, and water is used in the resist stripping step. Patent Document 7 proposes an alkaline cleaning solution for a microelectronic substrate, which contains a metal-ion-free basic aqueous solution, a nonionic surfactant, and a component for adjusting the pH of the cleaning solution to a range of about 8 to 10.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Patent Document 6

Patent Document 7

Summary of the Invention

Problems to be Solved by the Invention

[0006] For wiring boards for electrically connecting semiconductor chips, particularly for forming fine wirings, a semi-additive process is generally used. For example, Japanese Patent Application Laid-Open No. 2009-120870 proposes a method for manufacturing a wiring board using a semi-additive process. As a manufacturing process of a wiring board using a semi-additive process, generally, a step of forming a metal seed layer (this metal sheet layer will become an electrode or a metal wiring by electrolytic plating performed later) on a substrate by electroless plating, a step of forming a dry film resist layer (resist pattern) for forming a circuit pattern on the surface of the metal seed layer and forming a mask for the circuit pattern by exposure and development, a step of forming a metal layer (circuit pattern, electrode or metal wiring) by electrolytic plating on a portion where the metal seed layer is exposed (a portion not covered by the resist pattern) using the dry film resist layer as a mask, a step of peeling the dry film resist layer (resist peeling step), and a step of etching the metal seed layer (a portion covered by the resist pattern) exposed by peeling the dry film resist layer (seed etching step) are included. However, from the viewpoints of improving production efficiency and reducing equipment investment, simplification of the manufacturing process of a wiring board using a semi-additive process is required.

[0007] Therefore, the present disclosure provides a treatment liquid and a treatment method capable of efficiently performing peeling of a negative-type dry film resist and etching of a metal seed layer simultaneously.

Means for Solving the Problems

[0008] In one aspect, the present disclosure relates to a treatment liquid for simultaneously removing a negative dry film resist layer and etching a metal seed layer in the manufacture of an electronic substrate using a substrate having a negative dry film resist layer and a metal seed layer, the treatment liquid containing an organic alkali (component A), a primary ammonium source (component B), and an oxidizing agent (component C), for resist stripping and seed etching.

[0009] In one aspect, the present disclosure relates to a treatment method for removing a negative dry film resist layer from a substrate having a negative dry film resist layer and a metal seed layer and etching the metal seed layer, the method including bringing the treatment liquid of the present disclosure into contact with the substrate having the negative dry film resist layer and the metal seed layer.

Advantages of the Invention

[0010] According to the present disclosure, in one or more embodiments, it is possible to provide a treatment liquid capable of efficiently and simultaneously removing a negative dry film resist and etching a metal seed layer.

Modes for Carrying Out the Invention

[0011] As described above, in the manufacturing process of a wiring substrate using the semi-additive method, generally, the resist stripping process and the seed etching process are performed separately. Generally, an alkaline stripper is used for resist stripping, and an acidic etchant is used for seed etching. As a result of intensive studies by the present inventors, it has been found that by using a treatment liquid containing an organic alkali (component A), a primary ammonium source (component B), and an oxidizing agent (component C), it is possible to efficiently and simultaneously remove a negative dry film resist and etch a metal seed layer, and the manufacturing process of an electronic substrate using the semi-additive method can be simplified.

[0012] In one aspect, the present disclosure relates to a treatment liquid for simultaneously peeling a negative dry film resist layer and etching a metal seed layer in the manufacture of an electronic substrate using a substrate having a negative dry film resist layer and a metal seed layer, the treatment liquid containing an organic alkali (component A), a primary ammonium source (component B), and an oxidizing agent (component C) for resist peeling and seed etching (hereinafter also referred to as "the treatment liquid of the present disclosure").

[0013] According to the present disclosure, in one or more embodiments, a treatment liquid capable of efficiently and simultaneously peeling a negative dry film resist and etching a metal seed layer can be provided. By using the treatment liquid of the present disclosure, a high-quality electronic substrate can be obtained.

[0014] Although there are still unclear parts in the detailed mechanism of action for the expression of the effects of the present disclosure, it is presumed as follows. In the semi-additive method, it is common to use a negative dry film resist as a mask. For peeling the negative dry film resist, an alkali-type peeling agent is used, and in particular, a peeling agent using an organic alkali as an alkali source is known to be effective. It is also known that an alkali-type peeling agent can dissolve metals such as copper, but its solubility is low. On the other hand, when etching by dissolving a metal such as copper, it is known to dissolve oxidized copper using an oxidizing agent to improve solubility. However, since the oxidizing agent inhibits alkalinity, generally, simply mixing an alkali-type peeling agent and an oxidizing agent cannot achieve both peeling of the negative dry film resist and seed etching. In the present disclosure, by blending a primary ammonium source (component B) into a treatment liquid containing an organic alkali (component A) and an oxidizing agent (component C), it is presumed that alkalinity can be maintained and the dissolution of metals such as copper can be promoted by forming an ammonium complex. That is, in a method for manufacturing an electronic substrate using a substrate having a negative dry film resist layer and a metal seed layer, it is considered that the peeling of the negative dry film resist layer and the etching of the metal seed layer can be efficiently performed simultaneously. However, the present disclosure may not be construed as being limited to this mechanism.

[0015] In the present disclosure, a negative dry film resist has the property that its solubility in a developer decreases when exposed, and the exposed portion is used as a mask after exposure and development. A mask is a mask for protecting the surface of a substance from processes such as etching, plating, and heating, that is, a mask that functions as a protective film. In one or more embodiments, the manufacturing of an electronic substrate using a substrate having a negative dry film resist layer and a metal seed layer is a method for manufacturing an electronic substrate in which a metal wiring is formed by plating using the negative dry film resist as a mask.

[0016] In one or more embodiments, the treatment liquid of the present disclosure can be used for treating a substrate having a negative dry film resist layer and a metal seed layer. Here, treatment means efficiently performing the peeling treatment of the negative dry film resist layer and the etching treatment of the metal seed layer simultaneously. In the present disclosure, "simultaneously performing the peeling of the negative dry film resist layer and the etching of the metal seed layer" means that, in one or more embodiments, the peeling of the negative dry film resist layer and the etching of the metal seed layer are performed by one step using the treatment liquid or one treatment using the treatment liquid.

[0017] [Organic alkali (Component A)] The organic alkali (hereinafter also simply referred to as "Component A") contained in the treatment liquid of the present disclosure may be one kind or a combination of two or more kinds. Examples of Component A include at least one selected from quaternary ammonium hydroxide (Component A1) and alkanolamine (Component A2). From the viewpoint of improving the peelability of the negative dry film resist and the etching rate (etchability) of the metal seed layer, a combination of Component A1 and Component A2 is preferable.

[0018] (Component A1: Quaternary ammonium hydroxide) As the quaternary ammonium hydroxide (hereinafter also referred to as "Component A1"), for example, a quaternary ammonium hydroxide represented by the following formula (I) can be mentioned. Component A1 may be one kind or a combination of two or more kinds. [Chemical formula]

[0019] In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently at least one selected from a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, a hydroxyethyl group and a hydroxypropyl group.

[0020] The quaternary ammonium hydroxide represented by formula (I) is a salt composed of a quaternary ammonium cation and hydroxide. For example, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide (choline), 2-hydroxyethyltriethylammonium hydroxide, 2-hydroxyethyltripropylammonium hydroxide, 2-hydroxypropyltrimethylammonium hydroxide, 2-hydroxypropyltriethylammonium hydroxide, 2-hydroxypropyltripropylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammonium hydroxide, diethylbis(2-hydroxyethyl)ammonium hydroxide, dipropylbis(2-hydroxyethyl)ammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, tris(2-hydroxyethyl)ethylammonium hydroxide, tris(2-hydroxyethyl)propylammonium hydroxide, tetrakis(2-hydroxyethyl)ammonium hydroxide, and tetrakis(2-hydroxypropyl)ammonium hydroxide. Among these, from the viewpoints of improving the peelability of the negative dry film resist and the etching rate of the metal seed layer, tetramethylammonium hydroxide (TMAH) is more preferable.

[0021] From the viewpoint of improving the peelability of the negative dry film resist, the content of component A1 in the treatment liquid of the present disclosure is preferably 1% by mass or more, more preferably 2% by mass or more, still more preferably 3% by mass or more, and similarly from the viewpoint of improving the peelability of the negative dry film resist, it is preferably 15% by mass or less, more preferably 10% by mass or less, still more preferably 7% by mass or less. More specifically, the content of component A1 in the treatment liquid of the present disclosure is preferably 1% by mass or more and 15% by mass or less, more preferably 2% by mass or more and 10% by mass or less, still more preferably 3% by mass or more and 7% by mass or less. When component A1 is a combination of two or more types, the content of component A1 refers to their total content.

[0022] (Component A2: Alkanolamine) Examples of the alkanolamine (amino alcohol) (hereinafter also referred to as "Component A2") include compounds represented by the following formula (II). Component A2 may be one kind or a combination of two or more kinds. [Chemical formula]

[0023] In the above formula (II), R 5 represents a hydrogen atom, a methyl group, an ethyl group or an aminoethyl group, and R 6 represents a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group or an ethyl group, and R 7 represents a hydroxyethyl group or a hydroxypropyl group.

[0024] Examples of Component A2 include at least one selected from monoethanolamine (MEA), monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine, diisopropanolamine, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethylmonoethanolamine, N-diethylmonoisopropanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N-(β-aminoethyl)ethanolamine, N-(β-aminoethyl)isopropanolamine, N-(β-aminoethyl)diethanolamine, and N-(β-aminoethyl)diisopropanolamine. Among these, from the viewpoints of improving the peelability of the negative-type dry film resist and the etching rate of the metal seed layer, monoethanolamine (MEA) is preferred.

[0025] From the viewpoints of improving the stripping property of the negative dry film resist and the etching property of the metal seed layer, the content of Component A2 in the treatment liquid of the present disclosure is preferably 5% by mass or more, more preferably 8% by mass or more, still more preferably 10% by mass or more, and from the viewpoint of improving the stripping property of the negative dry film resist, it is preferably 20% by mass or less, more preferably 18% by mass or less, still more preferably 15% by mass or less. More specifically, the content of Component A2 in the treatment liquid of the present disclosure is preferably 5% by mass or more and 20% by mass or less, more preferably 8% by mass or more and 18% by mass or less, still more preferably 10% by mass or more and 15% by mass or less. When Component A2 is a combination of two or more types, the content of Component A2 refers to their total content.

[0026] From the viewpoints of improving the stripping property of the negative dry film resist and the etching property of the metal seed layer, the content of Component A in the treatment liquid of the present disclosure is preferably 5% by mass or more, more preferably 10% by mass or more, still more preferably 15% by mass or more, and from the viewpoint of improving the stripping property of the negative dry film resist, it is preferably 30% by mass or less, more preferably 25% by mass or less, still more preferably 20% by mass or less. More specifically, the content of Component A in the treatment liquid of the present disclosure is preferably 5% by mass or more and 30% by mass or less, more preferably 10% by mass or more and 25% by mass or less, still more preferably 15% by mass or more and 20% by mass or less. When Component A is a combination of two or more types, the content of Component A refers to their total content.

[0027] From the viewpoints of improving the stripping property of the negative dry film resist and the etching property of the metal seed layer, the mass ratio A2 / A1 of Component A2 to Component A1 in the treatment liquid of the present disclosure [content of Component A2 (% by mass) / content of Component A1 (% by mass)] is preferably 0.01 or more, more preferably 0.1 or more, still more preferably 1 or more, and from the same viewpoints, it is preferably 100 or less, preferably 50 or less, more preferably 10 or less, still more preferably 5 or less. From the same viewpoints, the mass ratio A2 / A1 in the treatment liquid of the present disclosure is preferably 0.01 or more and 50 or less, more preferably 0.1 or more and 10 or less, still more preferably 1 or more and 5 or less.

[0028] In the present disclosure, the "content of each component in the treatment liquid" refers to the content of each component in the treatment liquid at the time of use, that is, when starting to use the treatment liquid for treatment (resist stripping and seed etching). In one or more embodiments, the content of each component in the treatment liquid of the present disclosure can be regarded as the blending amount of each component in the treatment liquid of the present disclosure.

[0029] [Component B: Primary ammonium source] The primary ammonium source (hereinafter also referred to as "Component B") contained in the treatment liquid of the present disclosure may be one type or a combination of two or more types. As Component B, ammonia or a primary ammonium salt can be mentioned from the viewpoints of improving the peelability of the negative dry film resist and the etching rate of the metal seed layer. Examples of the primary ammonium salt include inorganic ammonium salts and primary ammonium salts of organic acids. Examples of the inorganic ammonium salt include ammonium chloride, ammonium sulfide, ammonium sulfate, ammonium nitrate, etc. As the primary ammonium salt of an organic acid, an ammonium salt of a carboxylic acid having 1 to 5 carbon atoms is preferable, and ammonium formate and ammonium oxalate are more preferable.

[0030] From the viewpoint of improving the etching property of the metal seed layer, the content of Component B in the treatment liquid of the present disclosure is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, still more preferably 0.7% by mass or more, and even more preferably 1% by mass or more. From the viewpoint of improving the peelability of the negative dry film resist, it is preferably 10% by mass or less, more preferably 5% by mass or less, still more preferably 3% by mass or less, and even more preferably 2% by mass or less. More specifically, the content of Component B in the treatment liquid of the present disclosure is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.5% by mass or more and 5% by mass or less, still more preferably 0.7% by mass or more and 3% by mass or less, and even more preferably 1% by mass or more and 2% by mass or less. When Component B is a combination of two or more types, the content of Component B refers to their total content.

[0031] The mass ratio A / B of component A to component B in the treatment liquid of the present disclosure [content of component A (mass%) / content of component B (mass%)] is preferably 0.01 or more, more preferably 0.1 or more, still more preferably 1 or more, even more preferably 5 or more, and even more preferably 8.5 or more, from the viewpoints of improving the peelability of the negative dry film resist and improving the etching property of the metal seed layer. From the same viewpoints, it is preferably 100 or less, more preferably 50 or less, still more preferably 25 or less, even more preferably 20 or less, and even more preferably 17 or less. From the same viewpoints, the mass ratio A / B in the treatment liquid of the present disclosure is preferably 0.01 or more and 100 or less, more preferably 0.1 or more and 50 or less, still more preferably 1 or more and 25 or less, even more preferably 5 or more and 20 or less, and even more preferably 8.5 or more and 17 or less.

[0032] The mass ratio A1 / B of component A1 to component B in the treatment liquid of the present disclosure [content of component A1 (mass%) / content of component B (mass%)] is preferably 0.01 or more, more preferably 0.1 or more, still more preferably 1 or more, even more preferably 2.5 or more, from the viewpoints of improving the peelability of the negative dry film resist and improving the etching property of the metal seed layer. From the same viewpoints, it is preferably 100 or less, more preferably 50 or less, still more preferably 15 or less, even more preferably 8 or less, and even more preferably 5 or less. From the same viewpoints, the mass ratio A1 / B in the treatment liquid of the present disclosure is preferably 0.01 or more and 100 or less, more preferably 0.1 or more and 50 or less, still more preferably 1 or more and 15 or less, even more preferably 1 or more and 8 or less, and even more preferably 2.5 or more and 5 or less.

[0033] The mass ratio A2 / B of component A2 to component B in the treatment liquid of the present disclosure [content of component A2 (mass%) / content of component B (mass%)] is preferably 0.01 or more, more preferably 0.1 or more, still more preferably 1 or more, even more preferably 5 or more, even more preferably 6 or more, and preferably 100 or less, more preferably 50 or less, still more preferably 25 or less, even more preferably 15 or less, even more preferably 12 or less, from the viewpoints of improving the stripping property of the negative dry film resist and improving the etching property of the metal seed layer. From the same viewpoints, the mass ratio A2 / B in the treatment liquid of the present disclosure is preferably 0.01 or more and 100 or less, more preferably 0.1 or more and 50 or less, still more preferably 1 or more and 25 or less, even more preferably 5 or more and 15 or less, even more preferably 6 or more and 12 or less.

[0034] [Oxidizing agent (component C)] The oxidizing agent (hereinafter also referred to as "component C") contained in the treatment liquid of the present disclosure may be one kind or a combination of two or more kinds. As component C, from the viewpoints of improving the stripping property of the negative dry film resist and improving the etching rate of the metal seed layer, for example, peroxides, permanganic acid or its salts, chromic acid or its salts, peroxy acids or their salts, oxy acids or their salts, metal salts, nitrates, sulfates, etc. can be mentioned. Among these, hydrogen peroxide is preferable.

[0035] The content of component C in the treatment liquid of the present disclosure is preferably 1 mass% or more, more preferably 2 mass% or more, still more preferably 3 mass% or more, from the viewpoint of improving the etching property of the metal seed layer, and preferably 15 mass% or less, more preferably 10 mass% or less, still more preferably 7 mass% or less, from the viewpoint of improving the stripping property of the negative dry film resist. More specifically, the content of component C in the treatment liquid of the present disclosure is preferably 1 mass% or more and 15 mass% or less, more preferably 2 mass% or more and 10 mass% or less, still more preferably 3 mass% or more and 7 mass% or less. When component C is a combination of two or more kinds, the content of component C refers to their total content.

[0036] The mass ratio A / C of component A to component C in the treatment liquid of the present disclosure [content of component A (mass%) / content of component C (mass%)] is preferably 0.01 or more, more preferably 0.1 or more, still more preferably 1 or more, even more preferably 2 or more, from the viewpoints of improving the stripping property of the negative dry film resist and improving the etching property of the metal seed layer. From the same viewpoints, it is preferably 100 or less, more preferably 50 or less, still more preferably 25 or less, even more preferably 10 or less, and even more preferably 5 or less. From the same viewpoints, the mass ratio A / C in the treatment liquid of the present disclosure is preferably 0.01 or more and 100 or less, more preferably 0.1 or more and 50 or less, still more preferably 1 or more and 25 or less, even more preferably 2 or more and 10 or less, and even more preferably 2 or more and 5 or less.

[0037] The mass ratio B / C of component B to component C in the treatment liquid of the present disclosure [content of component B (mass%) / content of component C (mass%)] is preferably 0.01 or more, more preferably 0.5 or more, still more preferably 0.2 or more, from the viewpoints of improving the stripping property of the negative dry film resist and improving the etching property of the metal seed layer. From the same viewpoints, it is preferably 100 or less, more preferably 50 or less, still more preferably 10 or less, even more preferably 2 or less, and even more preferably 1 or less, and even more preferably 0.4 or less. From the same viewpoints, the mass ratio B / C in the treatment liquid of the present disclosure is preferably 0.01 or more and 100 or less, more preferably 0.5 or more and 50 or less, still more preferably 0.2 or more and 10 or less, even more preferably 0.2 or more and 2 or less, and even more preferably 0.2 or more and 1 or less, and even more preferably 0.2 or more and 0.4 or less.

[0038] The mass ratio A1 / C of component A1 to component C in the treatment liquid of the present disclosure [content of component A1 (mass%) / content of component C (mass%)] is preferably 0.01 or more, more preferably 0.5 or more, still more preferably 0.2 or more, and from the viewpoint of improving the peelability of the negative dry film resist and the etching property of the metal seed layer, and from the same viewpoint, it is preferably 100 or less, more preferably 50 or less, still more preferably 10 or less, and even more preferably 2 or less. From the same viewpoint, the mass ratio A1 / C in the treatment liquid of the present disclosure is preferably 0.01 or more and 100 or less, more preferably 0.5 or more and 50 or less, still more preferably 0.2 or more and 10 or less, and even more preferably 0.2 or more and 2 or less.

[0039] The mass ratio A2 / C of component A2 to component C in the treatment liquid of the present disclosure [content of component A2 (mass%) / content of component C (mass%)] is preferably 0.01 or more, more preferably 0.5 or more, still more preferably 0.2 or more, even more preferably 1 or more, and from the viewpoint of improving the peelability of the negative dry film resist and the etching property of the metal seed layer, and from the same viewpoint, it is preferably 100 or less, more preferably 50 or less, still more preferably 10 or less, and even more preferably 5 or less. From the same viewpoint, the mass ratio A2 / C in the treatment liquid of the present disclosure is preferably 0.01 or more and 100 or less, more preferably 0.5 or more and 50 or less, still more preferably 0.2 or more and 10 or less, and even more preferably 1 or more and 5 or less.

[0040] [Component D: Water] The treatment liquid of the present disclosure further includes water (hereinafter, also referred to as "component D") in one or more embodiments. Examples of component D include ion-exchanged water, RO water, distilled water, pure water, ultrapure water, etc. in one or more embodiments.

[0041] When the treatment liquid of the present disclosure contains component D, the content of component D in the treatment liquid of the present disclosure can be the remainder excluding component A, component B, component C, and optional components described later. Specifically, from the viewpoints of improving the peelability of negative dry film resist, reducing the drainage treatment load, and suppressing damage to the substrate resin, the content of component D in the treatment liquid of the present disclosure is preferably 50% by mass or more, more preferably 60% by mass or more, still more preferably 65% by mass or more, and from the viewpoints of improving the peelability of negative dry film resist and the etching property of the metal seed layer, it is preferably 95% by mass or less, more preferably 80% by mass or less, still more preferably 75% by mass or less. More specifically, the content of component D in the treatment liquid of the present disclosure is preferably 50% by mass or more and 95% by mass or less, more preferably 60% by mass or more and 80% by mass or less, still more preferably 65% by mass or more and 75% by mass or less.

[0042] From the viewpoints of improving the peelability of negative dry film resist and the etching rate of the metal seed layer, the total amount of component A, component B, component C, and component D in the treatment liquid of the present disclosure is preferably 80% by mass or more, more preferably 85% by mass or more, still more preferably 90% by mass or more, and still more preferably 92% by mass or more.

[0043] [Glycol ether (component E)] In one or more embodiments, the treatment liquid of the present disclosure may further contain glycol ether (hereinafter also referred to as "component E") from the viewpoint of the stability of negative dry film resist peeling. Component E may be one type or a combination of two or more types. As component E, from the viewpoint of the stability of negative dry film resist stripping, in one or more embodiments, compounds having a structure in which 1 to 3 moles of ethylene glycol are added to an alcohol having 1 to 8 carbon atoms can be mentioned. Examples of component E include at least one selected from diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, and diethylene glycol diethyl ether. Among these, diethylene glycol monobutyl ether (BDG) is preferred.

[0044] When the treatment liquid of the present disclosure contains component E, the content of component E in the treatment liquid of the present disclosure is preferably 2% by mass or more, more preferably 3% by mass or more, still more preferably 5% by mass or more, from the viewpoint of the stability of negative dry film resist stripping, and preferably 15% by mass or less, more preferably 10% by mass or less, still more preferably 8% by mass or less, from the viewpoints of improving the stripping property of the negative dry film resist and the etching property of the metal seed layer. More specifically, the content of component E in the treatment liquid of the present disclosure is preferably 2% by mass or more and 15% by mass or less, more preferably 3% by mass or more and 10% by mass or less, still more preferably 5% by mass or more and 8% by mass or less. When component E is a combination of two or more kinds, the content of component E refers to their total content.

[0045] [Other Components] The treatment liquid of the present disclosure can further contain other components as necessary, in addition to the above components A to E, as long as the effects of the present disclosure are not impaired. Examples of other components include alkalis other than component A, ammonium salts other than component B, organic solvents other than component E, surfactants, chelating agents, thickeners, dispersants, rust inhibitors, polymer compounds, solubilizers, antioxidants, preservatives, defoaming agents, antibacterial agents, and the like.

[0046] From the perspective of reducing the wastewater treatment load and the impact on the substrate, the total content of organic substances derived from Component A, Component B, Component C, and optional components (Component E, other components) in the treatment liquid of the present disclosure is preferably 30% by mass or less, more preferably 25% by mass or less, still more preferably 20% by mass or less, even more preferably 16% by mass or less. And from the perspective of improving the stripping property of the negative dry film resist, it is preferably 2% by mass or more, more preferably 3% by mass or more, still more preferably 4% by mass or more, and even more preferably 6% by mass or more. More specifically, the total content of organic substances derived from Component A, Component B, Component C, and optional components (Component E, other components) in the treatment liquid of the present disclosure is preferably 2% by mass or more and 30% by mass or less, more preferably 3% by mass or more and 25% by mass or less, still more preferably 4% by mass or more and 20% by mass or less, and even more preferably 6% by mass or more and 16% by mass or less.

[0047] [Method for manufacturing the treatment liquid] In one or more embodiments, the treatment liquid of the present disclosure can be manufactured by blending Component A, Component B, Component C, and, if necessary, the above-mentioned optional components (Component D, Component E, other components) by a known method. For example, the treatment liquid of the present disclosure can be made by blending at least the above-mentioned Component A, Component B, and Component C. Therefore, the present disclosure relates to a method for manufacturing a treatment liquid, which includes a step of blending at least the above-mentioned Component A, Component B, and Component C. In the present disclosure, "blending" includes mixing Component A, Component B, and Component C, and, if necessary, the above-mentioned optional components (Component D, Component E, other components) simultaneously or in any order. In the method for manufacturing the treatment liquid of the present disclosure, the preferred blending amount of each component can be the same as the preferred content of each component in the treatment liquid of the present disclosure described above.

[0048] The treatment liquid of the present disclosure may be in a form that can be directly used for treatment, or may be in a form that is manufactured as a concentrate and diluted during use, as long as separation, precipitation, etc. do not occur and the storage stability is not impaired. The present disclosure relates to a concentrate for obtaining the treatment liquid of the present disclosure in one or more embodiments. In one or more embodiments, the treatment liquid of the present disclosure may be prepared as a concentrate with a reduced amount of water (Component D). From the viewpoints of transportation and storage, the concentrate of the treatment liquid of the present disclosure is preferably a concentrate with a dilution ratio of 3 times or more, and from the viewpoint of storage stability, it is preferably a concentrate with a dilution ratio of 30 times or less. The concentrate of the treatment liquid of the present disclosure can be diluted with water (Component D) so that each component (Component A, Component B, Component C, Component D, Component E, and other components) has the above-described content (i.e., the content during treatment) during use. Furthermore, the concentrate of the treatment liquid of the present disclosure can also be used by separately adding each component during use. In the present disclosure, "during use" or "during treatment" of the concentrate of the treatment liquid refers to a state in which the concentrate of the treatment liquid is diluted.

[0049] [Object to be treated] In one or more embodiments, the object to be treated is a substrate having a metal seed layer and a negative dry film resist layer. In one or more embodiments, the object to be treated is a substrate having a negative dry film resist and a metal layer on the metal seed layer. (Substrate) Examples of the substrate include an insulator plate, a film, and the like. In one or more embodiments, the substrate is an insulator substrate formed using an insulating material such as an epoxy resin, an epoxy acrylate resin, or a polyimide resin. Examples of the insulator substrate include a glass epoxy resin substrate. Examples of the thickness of the substrate include 0.8 to 3.2 mm. (Metal seed layer) In one or more embodiments, the metal seed layer is a metal layer formed by electroless plating. In one or more embodiments, the metal seed layer is formed on the entire surface of the substrate. In one or more embodiments, the metal seed layer is a copper-containing metal seed layer. The copper-containing metal seed layer is, in one or more embodiments, a seed layer formed by electroless copper plating. Examples of the thickness of the metal seed layer include 0.05 to 3 μm. (Negative dry film resist layer) In one or more embodiments, the negative dry film resist layer is a negative resist layer formed by laminating a negative dry film resist on the metal seed layer and subjecting it to exposure and / or development processes. Examples of the thickness of the negative dry film resist layer include 5 to 200 μm. The negative dry film resist layers may be stacked in multiple layers (e.g., 5 layers) to have a thickness of 200 μm. (Metal layer) Examples of the metal layer include a copper-containing metal layer. The copper-containing metal layer is, in one or more embodiments, a copper plating layer. The copper plating layer can be formed, for example, by an electroless copper plating method. Examples of the thickness of the metal layer include 4 to 160 μm. In one or more embodiments, the metal layer is used as a metal wiring (e.g., copper wiring).

[0050] Examples of the object to be processed include electronic components such as those in which wirings, connection terminals, etc. are formed on the surface of a substrate through a process of performing at least one of soldering and plating processes (such as copper plating, aluminum plating, nickel plating, tin plating, etc.) using a negative dry film resist as a mask. Examples of the electronic component include at least one component selected from printed circuit boards, wafers, metal plates such as copper plates and aluminum plates. The manufacturing intermediate is an intermediate product in the manufacturing process of an electronic component and includes the intermediate product after the resin mask treatment. In the present disclosure, soldering refers to causing solder to exist in the non-mask portion on the substrate and forming solder bumps by heating. In the present disclosure, the plating process refers to performing at least one plating process selected from copper plating, aluminum plating, nickel plating, and tin plating on the mask-free portion of the substrate. The mask-free portion refers to the portion where the mask has been removed by the development process in the resist pattern (pattern-shaped mask) formed by developing the mask (negative type) laminated on the substrate.

[0051] [Processing method] In one aspect, the present disclosure relates to a processing method for peeling a negative-type dry film resist layer and etching a metal seed layer from a substrate having a negative-type dry film resist layer and a metal seed layer, including contacting the processing liquid of the present disclosure with a substrate (object to be processed) having a negative-type dry film resist layer and a metal seed layer (hereinafter also referred to as "the processing method of the present disclosure"). Examples of the object to be processed include the object to be processed described above. According to the processing method of the present disclosure, the peeling of the negative-type dry film resist and the etching of the metal seed layer can be efficiently performed simultaneously.

[0052] Examples of the method for simultaneously peeling the negative-type dry film resist layer and etching the metal seed layer from the object to be processed or contacting the object to be processed with the processing liquid of the present disclosure include, for example, a method of contacting by immersing in a bathtub filled with the processing liquid, a method of contacting by injecting the processing liquid in a spray form (shower method), and the like. As for the dipping conditions and spray irradiation conditions, for example, the temperature of the treatment agent when dipping or spray irradiating is preferably 40°C or higher, more preferably 45°C or higher, still more preferably 50°C or higher, from the viewpoint of the time required for the treatment, and preferably 70°C or lower, more preferably 65°C or lower, still more preferably 60°C or lower, from the viewpoint of protecting parts other than the mask (negative dry film resist) and seed (metal seed layer) of the object to be treated. The dipping time and spray irradiation time are preferably 15 seconds or longer, more preferably 20 seconds or longer, still more preferably 30 seconds or longer, from the viewpoint of uniform treatment of the object to be treated, and preferably 5 minutes or shorter, more preferably 3 minutes or shorter, still more preferably 1 minute or shorter, from the viewpoint of substrate productivity. The spray pressure when spray irradiating is, for example, 0.03 MPa or more and 0.3 MPa or less from the viewpoint of suppressing consumption of the treatment liquid.

[0053] In one or more embodiments, the treatment method of the present disclosure can include a step of rinsing with water and drying after bringing the object to be treated into contact with the treatment liquid of the present disclosure. In one or more embodiments, the treatment method of the present disclosure can include a step of rinsing the object to be treated with water after bringing it into contact with the treatment liquid of the present disclosure.

[0054] [Method for manufacturing electronic components] In one aspect, the present disclosure relates to a method for manufacturing an electronic component (hereinafter, also referred to as "the method for manufacturing an electronic component of the present disclosure") including a step (treatment step) of treating a substrate (object to be treated) having a negative dry film resist layer and a metal seed layer using the treatment method of the present disclosure. Examples of the object to be treated include the above-described object to be treated. The treatment in the treatment step refers to a treatment that simultaneously performs a peeling treatment of the negative dry film resist layer and an etching treatment of the metal seed layer. In one or more embodiments, the method for manufacturing an electronic component of the present disclosure can include a step of performing at least one of soldering and plating using a resin mask on at least one electronic component selected from a printed circuit board, a wafer, and a metal plate after performing the treatment step. The method for manufacturing an electronic component of the present disclosure can efficiently perform the peeling of a negative dry film resist and the etching of a metal seed layer simultaneously by using the processing method of the present disclosure, thereby improving the manufacturing efficiency of the electronic component.

[0055] [Method for manufacturing a wiring board] In one aspect, the present disclosure relates to a method for manufacturing a wiring board using a semi-additive method (hereinafter, also referred to as "the method for manufacturing a wiring board of the present disclosure"). The method for manufacturing a wiring board of the present disclosure is, in one or more embodiments, a method for manufacturing a wiring board including a processing method (the processing method of the present disclosure) of peeling a negative dry film resist layer and etching a metal seed layer from a substrate having a negative dry film resist layer and a metal seed layer, A method for manufacturing a wiring board including bringing the processing liquid of the present disclosure into contact with a substrate having a negative dry film resist layer and a metal seed layer. In the method for manufacturing a wiring board of the present disclosure, examples of the method of bringing the processing liquid of the present disclosure into contact with the object to be processed include the same methods as the above-described processing method of the present disclosure. The method for manufacturing a wiring board of the present disclosure can, in one or more embodiments, include a step of rinsing with water and drying after bringing the object to be processed into contact with the processing liquid of the present disclosure. The method for manufacturing a wiring board of the present disclosure can, in one or more embodiments, include a step of rinsing with water after bringing the object to be processed into contact with the processing liquid of the present disclosure.

[0056] The method for manufacturing a wiring board of the present disclosure is, in one or more other embodiments, a method for manufacturing a wiring board in which a metal wiring is formed on a substrate using a semi-additive method, A step of forming a metal seed layer by electroless plating on a substrate (seed layer forming step), A step of forming a negative dry film resist layer (resist pattern) on the surface of the metal seed layer to form a mask for a circuit pattern (masking step), A step of forming a metal layer (circuit pattern) by electrolytic plating on a portion where the metal seed layer is exposed (a portion not covered by the resist pattern) (circuit pattern forming step), A method for manufacturing a wiring board, including: a step of treating a negative dry film resist layer and a metal seed layer (a portion covered by the resist pattern) using the treatment liquid or the treatment method of the present disclosure (treatment step). In other one or more embodiments, the treatment step is a step of simultaneously peeling the negative dry film resist layer and etching the metal seed layer. In the wiring board manufacturing method of the present disclosure described above, for the steps up to the treatment step (that is, the seed layer forming step, the masking step, and the circuit pattern forming step), conventionally known methods used in the manufacture of printed boards, semiconductor package boards, etc. can be used. Further, as the substrate, the metal seed layer, the negative dry film resist layer, and the metal layer, those described in the description of the object to be processed can be mentioned.

[0057] According to the wiring board manufacturing method of the present disclosure, peeling of the negative dry film resist and etching of the metal seed layer can be efficiently performed simultaneously.

[0058] [Kit] In one aspect, the present disclosure relates to a kit for use in the treatment method of the present disclosure (hereinafter, also referred to as "the kit of the present disclosure"). In one or more embodiments, the kit of the present disclosure is a kit for manufacturing the treatment liquid of the present disclosure. According to the kit of the present disclosure, a treatment liquid capable of efficiently performing peeling of the negative dry film resist and etching of the metal seed layer simultaneously can be obtained. As one embodiment of the kit of the present disclosure, there is provided a kit (two-component treatment liquid) that includes a solution containing component A and component B (first liquid) and a solution containing component C (second liquid) in a state where they are not mixed with each other, at least one of the first liquid and the second liquid further contains a part or all of water (component D), and the first liquid and the second liquid are mixed during use. After the first liquid and the second liquid are mixed, they may be diluted with water (component D) as necessary. Each of the first liquid and the second liquid may contain any of the above-described optional components as necessary.

Examples

[0059] Hereinafter, the present disclosure will be specifically described by way of examples, but the present disclosure is not limited to these examples in any way.

[0060] 1. Preparation of treatment liquids for Examples 1 to 2 and Comparative Examples 1 to 2 Treatment liquids for Examples 1 to 2 and Comparative Examples 1 to 2 were prepared by mixing the respective components shown in Table 1 in the blending amounts (mass%, active ingredient) described in Table 1 and stirring and mixing them. Note that the blending amount of water (component D) includes the content of water contained in aqueous TMAH solution, aqueous hydrogen peroxide solution, etc.

[0061] The following were used for the preparation of the treatment liquids for Examples 1 to 2 and Comparative Examples 1 to 2. (Component A) TMAH: Tetramethylammonium hydroxide [manufactured by Resonac, 25% aqueous TMAH solution] MEA: Monoethanolamine [manufactured by Nippon Shokubai] (Component B) Ammonium formate [manufactured by Toyama Chemical] Ammonium oxalate [manufactured by SIGMA-ALDRICH] (Component C) Hydrogen peroxide [manufactured by Fujifilm Wako Pure Chemical Industries, 30 mass% aqueous hydrogen peroxide solution] (Component D) Water [pure water of 1 μS / cm or less produced by the pure water apparatus G-10DSTSET manufactured by Organo Corporation] (Component E) BDG: Butyl diglycol [manufactured by Nippon Emulsifier Co., Ltd., diethylene glycol monobutyl ether]

[0062] 2. Evaluation of the treatment liquid The following evaluations were performed on the prepared treatment liquids of Examples 1 to 2 and Comparative Examples 1 to 2.

[0063] [Measurement of the lifting point (evaluation of peelability)] Using the prepared treatment liquid, Test Piece I was treated as follows, and the dry film was peeled from the substrate. In the following treatment method, the time (seconds) when the blue dry film resist peeled from the entire surface of Test Piece I visually and copper was exposed on the entire surface of Test Piece I was measured, and the results are shown in Table 1. (Test Piece I) A photosensitive film for negative resist formation (thickness: 45 μm) was laminated on the surface of a glass epoxy resin substrate (thickness: 0.9 mm) having a solid copper plating layer (thickness: 0.8 μm) by electroless plating, and Test Piece I was produced by exposure treatment and curing. Here, Test Piece I was modeled after a substrate (thickness: 0.9 mm) having a metal seed layer (thickness: 0.8 μm) and a negative dry film resist layer (thickness: 45 μm). (Peeling treatment) 2.0 kg of the treatment liquid was added to a 3L stainless steel beaker and heated to 60°C. While circulating in a box-type spray washer equipped with a 1-fluid nozzle (filled conical shape) J020 (manufactured by Ikeuchi Co., Ltd.) as a spray nozzle, Test Piece I was sprayed (pressure: 0.03 MPa, spray distance: 8 cm). Then, it was immersed in a rinsing tank with 1.0 kg of water added to a 1L glass beaker, rinsed, and dried by nitrogen blowing.

[0064] [Measurement of the etching rate (evaluation of etchability)] Using the prepared treatment liquid, Test Piece II was treated as follows, the etching rate was measured, and the results are shown in Table 1. (Test Piece II) A test piece II (50 mm × 25 mm) was cut out and used from the substrate used for measuring the lifting points before laminating the photosensitive film for forming a negative-type resist (that is, a solid substrate having a copper plating layer (thickness: 0.8 μm) on the surface of a glass epoxy resin substrate). (Etching treatment) 2.0 L of each treatment solution was prepared and heated to 60°C. While circulating in a box-type spray washer equipped with a filling conical nozzle (J020, manufactured by Ikeuchi Co., Ltd.) as a spray nozzle, copper plating was applied to the surface (the area was 12.5 cm per side 2 , 25.0 cm on both sides 2 ). The test piece II was sprayed for 1 minute (pressure: 0.03 MPa, spray distance: 80 mm). The elution amount of copper was measured from the weight change of the test piece II before and after the treatment. Using the following formula, with the density of copper being 8.96 g / cm 3 , the Cu etching rate (μm / min) was evaluated from the elution amount. Cu etching rate (μm / min) = Elution amount of copper (weight) ÷ Density of copper ÷ Plated area ÷ Treatment time

[0065]

Table 1

[0066] As shown in Table 1, the treatment solutions of Examples 1 to 2 had an improved Cu etching rate while peeling the negative-type dry film resist layer, compared to Comparative Example 1 that did not contain Component B and Component C, and Comparative Example 2 that did not contain Component B. That is, it was found that the treatment solutions of Examples 1 to 2 could efficiently perform the peeling of the negative-type dry film resist and the etching of the metal seed layer simultaneously.

Industrial Applicability

[0067] According to the present disclosure, it is possible to provide a treatment solution capable of efficiently performing the peeling of a negative-type dry film resist and the etching of a metal seed layer simultaneously. By using the treatment solution of the present disclosure, the productivity of semiconductor devices can be improved.

Claims

1. In the production of an electronic substrate using a substrate having a negative dry film resist layer and a metal seed layer, a treatment liquid for simultaneously peeling the negative dry film resist layer and etching the metal seed layer, A treatment liquid for resist peeling and seed etching, comprising an organic alkali (Component A), a primary ammonium source (Component B), and an oxidizing agent (Component C).

2. The treatment liquid according to Claim 1, wherein Component A is at least one selected from a quaternary ammonium salt (Component A1) and an alkanolamine (Component A2).

3. The treatment liquid according to Claim 1 or 2, wherein Component A is a combination of a quaternary ammonium salt (Component A1) and an alkanolamine (Component A2).

4. The treatment liquid according to Claim 1 or 2, further comprising water (Component D).

5. The treatment liquid according to Claim 1 or 2, wherein the mass ratio A / C of Component A to Component C is 0.01 or more and 100 or less.

6. The treatment liquid according to Claim 1 or 2, wherein the mass ratio B / C of Component B to Component C is 0.01 or more and 100 or less.

7. The treatment liquid according to Claim 1 or 2, wherein the metal seed layer is a copper-containing metal seed layer formed by electroless copper plating.

8. A treatment method for peeling a negative dry film resist layer and etching a metal seed layer from a substrate having a negative dry film resist layer and a metal seed layer, The treatment method comprising bringing the treatment liquid according to Claim 1 or 2 into contact with a substrate having a negative dry film resist layer and a metal seed layer.

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