Surface treatment apparatus, surface treatment method, indirect heating deposition apparatus, and indirect heating deposition method

Abstract

To provide a surface treatment apparatus, a surface treatment method, an indirect heating deposition apparatus, and an indirect heating deposition method, capable of improving post-anneal processing.SOLUTION: A surface treatment apparatus includes an electron beam source 8, a detector 40, and a controller 31. The electron beam source 8 emits an electron beam 19 onto a deposited film formed by deposition of evaporated particles on a substrate 101 (monitor substrate 101). The detector 40 detects the condition of the surface of the deposited film. The controller 31 stops emission of the electron beam 19 by the electron beam source 8 according to a detection result from the detector 40.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a surface treatment device, a surface treatment method, an indirect heating deposition device, and an indirect heating deposition method. [Background technology]

[0002] There are three types of vacuum evaporation: resistance heating, electron beam heating, and indirect heating. Resistance heating uses electrical resistance to heat and evaporate the evaporation material. Electron beam heating directly irradiates the evaporation material with an electron beam to heat and evaporate it. Indirect heating heats and evaporates the evaporation material by bombarding a container filled with the evaporation material with an electron beam.

[0003] Compared to electron beam heating, indirect heating is more effective in reducing damage to the deposition target (such as a substrate) caused by reflected electrons and X-rays, and in reducing splashes. In addition, indirect heating has a more stable deposition rate than resistance heating, so it is used for the deposition of high-quality metals, metal compounds, and organic materials.

[0004] An indirect heating evaporation source employing an indirect heating method is described in, for example, Patent Document 1. The indirect heating evaporation source described in Patent Document 1 includes a container, an electron source, a container holder, a moving mechanism, and a cooling table. The electron source emits thermoelectrons to the bottom of the container. The container holder holds the bottom of the container while exposing it. The moving mechanism drives the container holder to move the container horizontally. The cooling table has an upper surface that comes into contact with the bottom of the container moved horizontally from above the electron source by the moving mechanism, and cools the container. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2018-16836 Summary of the Invention [Problem to be solved by the invention]

[0006] Incidentally, a deposition target on which evaporated particles are deposited using an indirect heating deposition source such as that described in Patent Document 1 is subjected to a post-annealing treatment (heat treatment) in order to improve, for example, crystallinity. Further improvement in this post-annealing treatment is desired.

[0007] In consideration of the above problems, an object of the present invention is to provide a surface treatment apparatus, a surface treatment method, an indirect heating deposition apparatus, and an indirect heating deposition method that can improve post-annealing treatment. [Means for solving the problem]

[0008] In order to solve the above problems and achieve the object of the present invention, a surface treatment apparatus embodying one aspect of the present invention includes an electron beam source, a detection unit, and a control unit. The electron beam source irradiates an electron beam onto a vapor deposition film formed by the deposition of evaporated particles on a deposition target. The detection unit detects the surface condition of the vapor deposition film. The control unit stops the emission of the electron beam from the electron beam source in accordance with the detection result of the detection unit.

[0009] In a surface treatment method embodying one aspect of the present invention, an electron beam generating source irradiates an electron beam onto a vapor deposition film formed by the deposition of evaporated particles on a deposition target. Next, a detection unit detects the surface condition of the vapor deposition film. Then, a control unit stops emission of the electron beam from the electron beam generating source in accordance with the detection result of the detection unit.

[0010] An indirect heating evaporation apparatus embodying one aspect of the present invention includes a container filled with evaporation material, a container holder that holds the container with the bottom exposed, an electron beam source that emits an electron beam onto the bottom of the container, a movement mechanism that moves the container holder, and a deposition target holder that holds a deposition target on which evaporated particles of the evaporation material are deposited to form a deposition film. The container holder has an electron beam passage opening in a location separate from the part that holds the container. The movement mechanism moves the container holder between a first position where the container is located above the electron beam source and a second position where the electron beam passage opening is located above the electron beam source.

[0011] An indirect heating evaporation method embodying one aspect of the present invention includes an evaporation process, a movement process, and an electron beam irradiation process. In the evaporation process, an electron beam source emits an electron beam into a container filled with an evaporation material, and vaporized particles of the evaporation material are deposited on the object to be evaporated to form an evaporated film. In the movement process, a movement mechanism moves a container holder that holds the container, and positions an electron beam passage opening of the container holder above the electron beam source. In the electron beam irradiation process, the electron beam source emits an electron beam that passes through the electron beam passage opening and irradiates the evaporated film on the object to be evaporated. [Effects of the Invention]

[0012] According to the surface treatment device, surface treatment method, indirect heating vapor deposition device, and indirect heating vapor deposition method of the present invention, it is possible to improve the post-annealing treatment. Problems, configurations, and effects other than those described above will become apparent from the following description of the embodiments. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 1 is a schematic diagram illustrating the configuration of an indirect heating evaporation device according to a first embodiment of the present invention during evaporation. [Figure 2] FIG. 2 is a plan view showing a state during deposition of the indirect heating deposition device according to the first embodiment of the present invention. [Figure 3]FIG. 1 is a schematic diagram illustrating the configuration of an indirect heating evaporation apparatus according to a first embodiment of the present invention during electron beam irradiation. [Figure 4] FIG. 1 is a plan view showing a state during electron beam irradiation of the indirect heating evaporation apparatus according to the first embodiment of the present invention. [Figure 5] FIG. 10 is a schematic diagram illustrating the configuration of an indirect heating evaporation apparatus according to a second embodiment of the present invention during electron beam irradiation. [Figure 6] 1A and 1B are diagrams showing the surface of a vapor-deposited film before and after irradiation with an electron beam. [Figure 7] 10 is a graph showing the spectrum of reflected light from a first example of a vapor-deposited film according to a second embodiment of the present invention. [Figure 8] 10 is a graph showing the spectrum of reflected light from a second example of a vapor-deposited film according to a second embodiment of the present invention. [Figure 9] FIG. 10 is a schematic diagram showing the configuration of an indirect heating evaporation device according to a third embodiment of the present invention during evaporation. [Figure 10] FIG. 10 is a schematic diagram illustrating the configuration of an indirect heating evaporation apparatus according to a third embodiment of the present invention during electron beam irradiation. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, embodiments of the surface treatment apparatus, surface treatment method, indirect heating vapor deposition apparatus, and indirect heating vapor deposition method of the present invention will be described in detail with reference to the drawings. Note that common members in the various drawings are designated by the same reference numerals.

[0015] 1. First embodiment <Configuration of indirect heating evaporation equipment> First, the configuration of the indirect heating evaporation apparatus according to the first embodiment will be described with reference to FIGS. Fig. 1 is a schematic diagram showing the state of the indirect heating evaporation device according to the first embodiment during evaporation. Fig. 2 is a plan view showing the state of the indirect heating evaporation device according to the first embodiment during evaporation. Fig. 3 is a schematic diagram showing the state of the indirect heating evaporation device according to the first embodiment during electron beam irradiation. Fig. 4 is a plan view showing the state of the indirect heating evaporation device according to the first embodiment during electron beam irradiation.

[0016] The indirect heating evaporation apparatus 1 shown in Figures 1 to 4 is installed in a vacuum chamber. The indirect heating evaporation apparatus 1 includes a plurality of liners 2 (one is shown in Figures 1 and 3), a holder 3, a shutter 5, a substrate holder 6, an adhesion-preventing cover 7, an electron beam generating source 8 which is a specific example of an electron source, a control unit 31, and an electron gun power supply 32. The liners 2 correspond to the container according to the present invention, and the holder 3 corresponds to the container holding unit according to the present invention. The substrate holder 6 corresponds to the deposition target holding unit according to the present invention.

[0017] The liner 2 is formed in a cylindrical shape with a bottom, and has a circular bottom and a peripheral wall that is continuous with the periphery of the bottom. The liner 2 is made of a high-melting-point material such as molybdenum, tungsten, carbon, or ceramics. The liner 2 is filled with a deposition material 4. Examples of the deposition material 4 include gold (Au) and copper (Cu).

[0018] Although the liner 2 is formed in a cylindrical shape in the above example, the present invention is not limited to this. For example, the liner 2 may be formed in a rectangular cylindrical shape, a ring shape, or any of various other shapes.

[0019] The holder 3 is formed in a circular plate shape. The material of the holder 3 may be any material as long as it has high thermal resistance. Therefore, the heat of the liner 2 is not easily transferred to the holder 3. The holder 3 is supported by a rotary drive shaft 21.

[0020] The holder 3 has a holding hole 3a and an electron beam passage opening 3b. The holding hole 3a and the electron beam passage opening 3b are formed in a circular shape. The holding hole 3a passes through the liner 2. The electron beam passage opening 3b passes an electron beam 19 emitted from the electron beam generating source 8. The electron beam passage opening 3b is set to a size that allows the passing electron beam to be irradiated onto a vapor deposition film, described later, on the substrate 100 held by the substrate holder 6.

[0021] The number of holding holes 3a in the holder 3 is multiple, corresponding to the number of liners 2. However, the holder (container holding portion) according to the present invention may have one holding hole and hold one liner (container). The electron beam passage opening 3b is not limited to a circular hole, but may be a hole of various shapes, and may also be formed by cutting out a part of the holder 3.

[0022] A rotary drive shaft 21 is connected to the center of the holder 3. The rotary drive shaft 21 corresponds to the movement mechanism according to the present invention. The rotary drive shaft 21 is cooled so as not to impair its rotation function. The rotary drive shaft 21 is connected to a control unit 31. The control unit 31 controls the rotational drive of the rotary drive shaft 21.

[0023] The rotary drive shaft 21 rotates the holder 3 to move it between a first position and a second position. As shown in Figures 1 and 2, when the holder 3 moves to the first position, one of the multiple liners 2 is positioned above the electron beam generation source 8. As shown in Figures 3 and 4, when the holder 3 moves to the second position, the electron beam passage opening 3b is positioned above the electron beam generation source 8.

[0024] As shown in Figures 2 and 4, the deposition-protective cover 7 is formed in the shape of a circular plate. The deposition-protective cover 7 is supported by a plurality of supports and faces the holder 3 and the liner 2. Note that the shutter 5 and the substrate holder 6 are omitted from Figures 2 and 4. The deposition-protective cover 7 has an evaporation opening 7a. The evaporation opening 7a is formed by cutting out a portion of the deposition-protective cover 7 in a generally sector shape.

[0025] 1 and 3, the evaporation opening 7a faces the substrate 100 held by the substrate holder 6 in the vertical direction. The evaporation opening 7a also faces the electron beam generating source 8 in the vertical direction. In other words, the evaporation opening 7a is located between the substrate 100 and the electron beam generating source 8 in the vertical direction.

[0026] With the liner 2 positioned above the electron beam generating source 8 (see FIG. 1), the electron beam 19 emitted from the electron beam generating source 8 is irradiated onto the bottom of the liner 2. As a result, the bottom of the liner 2 is heated by electron impact, and the temperature of the liner 2 rises. Then, the deposition material 4 filled in the liner 2 sublimes or evaporates. Evaporated particles 20 of the deposition material 4 pass through the evaporation opening 7a of the deposition-protective cover 7.

[0027] When the electron beam passage opening 3b is positioned above the electron beam generating source 8 (see Figure 3), the electron beam 19 emitted from the electron beam generating source 8 passes through the electron beam passage opening 3b and the evaporation opening 7a of the deposition protection cover 7.

[0028] As shown in FIGS. 1 and 3, the shutter 5 is disposed between the evaporation opening 7a and the substrate 100. An opening / closing drive unit 22 is connected to the shutter 5. The opening / closing drive unit 22 is connected to a control unit 31. The control unit 31 controls the rotational drive of the opening / closing drive unit 22. The opening / closing drive unit 22 rotates the shutter 5 to move it between a closed position and an open position. In this way, the shutter 5 opens and closes the evaporation opening 7a. The opening / closing drive unit 22 is cooled so as not to impair its rotation function.

[0029] When the shutter 5 is moved to the closed position, it faces the evaporation opening 7a in the vertical direction. As a result, the shutter 5 closes the evaporation opening 7a and blocks the rising of the evaporation particles 20 that have passed through the evaporation opening 7a. When the shutter 5 is moved to the open position, it does not face the evaporation opening 7a in the vertical direction. As a result, the evaporation particles 20 that have passed through the evaporation opening 7a reach the substrate 100.

[0030] The substrate holder 6 is disposed above the deposition-preventing cover 7. The substrate holder 6 is formed in the shape of a circular plate, and holds a substrate 100 on its underside. The substrate 100 corresponds to the deposition target according to the present invention. A rotary drive shaft 23 is connected to the center of the upper surface of the substrate holder 6. The rotary drive shaft 23 rotates the substrate holder 6, and moves the substrate 100 held by the substrate holder 6 in the horizontal direction. The rotary drive shaft 23 is cooled so as not to impair its rotation function.

[0031] When forming a vapor-deposited film on the substrate 100, the rotary drive shaft 23 is rotated to rotate the substrate holder 6, and the substrate 100 is moved above the evaporation opening 7a. As a result, the substrate 100 faces the liner 2 or the electron beam passage opening 3b, which are arranged in a position facing the evaporation opening 7a. Note that, although the substrate holder 6 in FIG. 1 holds one substrate 100, the substrate holder 6 according to the present invention may hold a plurality of substrates.

[0032] The electron beam source 8 is disposed below the holder 3 at any position on the rotational orbit of the liner 2. As a result, when the holder 3 moves to the first position, the liner 2 is positioned above the electron beam source 8. The electron beam source 8 has a cathode with a filament and a Wehnelt that forms an electric field distribution. The cathode filament is connected to a cathode power supply 10 and an acceleration power supply 9 of the electron gun power supply 32. An opening is formed in the Wehnel to expose the filament. The filament is formed of a wire made of tungsten.

[0033] A scanning coil (deflection coil) 17 is disposed near the electron beam generating source 8. The scanning coil 17 is housed in a cooled block 18. The scanning coil 17 generates an AC magnetic field when a current flows through it. A scanning coil power supply 11, which will be described later, is connected to the scanning coil 17.

[0034] An anode 16 having an opening is fixed to the upper surface of the block 18. The anode 16 is disposed between the bottom of the liner 2 and the electron beam source 8. The opening of the anode 16 faces the electron beam source 8 at a predetermined distance. The anode 16 is made of a high-melting-point material because it is subject to a strong thermal load due to radiant heat from the liner 2 and reflected electrons.

[0035] When a predetermined current is supplied to the filament of the electron beam source 8, the temperature of the filament rises due to Joule heating, heating the cathode. As a result, the cathode is heated to a temperature at which it can emit thermoelectrons, for example, around 2300°C. When the acceleration power supply 9 applies a high voltage that is negative with respect to the earth potential, the thermoelectrons emitted from the cathode are accelerated by the electric field between the electron beam source 8 and the anode 16, generating an electron beam 19. This electron beam 19 is deflected by an AC magnetic field generated by the scanning coil 17 and is irradiated onto the liner 2 in a predetermined scanning pattern.

[0036] When the bottom of the liner 2 is subjected to electron impact heating by the electron beam 19, the temperature of the liner 2 rises. Then, the deposition material 4 is heated by conductive heat and radiation from the liner 2. When the electron impact heating of the bottom of the liner 2 is continued for a certain period of time, the deposition material 4 sublimes or evaporates. The evaporated particles of the deposition material 4 move upward in the liner 2. During the deposition operation, the evaporated particles of the deposition material 4 are deposited on the substrate 100, and a deposition film of a desired thickness is formed on the substrate 100.

[0037] The electron gun power supply 32 has a cathode power supply 10 and an acceleration power supply 9 connected to the electron beam generation source 8, a scanning coil power supply 11, and an electron gun control unit 12. The electron gun control unit 12 has a coil current control unit 34, a cathode current control unit 35, an emission current control unit 36, and an acceleration voltage control unit 37.

[0038] The cathode power supply 10 supplies a predetermined current to the cathode of the electron beam generation source 8. This causes the cathode to reach a temperature at which it can emit thermions through Joule heating. The acceleration power supply 9 is grounded. A high voltage that is negative with respect to the earth potential, for example, a voltage of 300 V to 6 kV, is applied to the acceleration power supply 9. The holder 3 is at earth potential. Therefore, the liner 2 held by the holder 3 is at earth potential.

[0039] The cathode power supply 10 is connected to a cathode current control unit 35. The cathode current control unit 35 is connected to an emission current control unit 36. The emission current control unit 36 controls the cathode current control unit 35 to control the output of the current flowing to the cathode of the electron beam generation source 8. This adjusts the emission electrons emitted from the cathode of the electron beam generation source 8. The acceleration voltage control unit 37 is connected to the acceleration power supply 9. The acceleration voltage control unit 37 controls the output of the voltage applied to the acceleration power supply 9.

[0040] The scanning coil power supply 11 is connected to the scanning coil 17. The scanning coil power supply 11 is connected to a coil current control unit 34. The coil current control unit 34 controls the waveform of the current supplied to the scanning coil 17 (hereinafter referred to as the "scanning coil current waveform"). This causes the electron beam 19 to irradiate the liner 2 in a predetermined scanning pattern.

[0041] <Example of operation of indirect heating evaporation equipment> Next, an example of the operation of the indirect heating evaporation device 1 having the above-described configuration will be described with reference to FIGS.

[0042] The indirect heating evaporation apparatus 1 according to the first embodiment first performs an evaporation process, and then performs a movement process. After that, the indirect heating evaporation apparatus 1 performs an electron beam irradiation process. In the evaporation process, the holder 3 is placed at a first position (see FIG. 1). As a result, the liner 2 filled with the evaporation material 4 is positioned above the electron beam generating source 8. In addition, the shutter 5 closes the evaporation opening 7a of the deposition-protective cover 7.

[0043] In the vapor deposition process, the electron beam source 8 irradiates the bottom of the liner 2 with an electron beam 19. This causes the bottom of the liner 2 to be heated by electron impact. When the bottom of the liner 2 is heated by electron impact, the temperature of the liner 2 rises. Then, the vapor deposition material 4 is heated by conductive heat and radiation from the liner 2. When the electron impact heating of the bottom of the liner 2 is continued for a certain period of time, the vapor deposition material 4 is heated and evaporated.

[0044] Next, the opening / closing drive unit 22 rotates the shutter 5 to move it to the open position. As a result, the evaporated particles 20 that have passed through the evaporation opening 7a of the deposition-preventing cover 7 proceed toward the substrate 100 held by the substrate holder 6. As a result, the evaporated particles 20 are deposited on the substrate 100 to form a vapor-deposited film of a desired thickness.

[0045] The thickness of the deposited film is detected by a quartz crystal film thickness gauge (not shown). The control unit 31 controls the output of the electron beam generator 8 according to the detection result of the quartz crystal film thickness gauge. Furthermore, when the thickness of the deposited film reaches a predetermined value, the control unit 31 controls the driving of the opening / closing drive unit 22 to move the shutter 5 to the closed position. In this way, the indirect heating evaporation device 1 controls the deposition speed and film thickness of the deposited film in real time.

[0046] In the moving step, the rotary drive shaft 21 rotates the holder 3 to move it to the second position (see FIG. 3). As a result, the electron beam passage opening 3b is positioned above the electron beam generation source 8. As a result, the electron beam generation source 8 faces the substrate 100 via the electron beam passage opening 3b and the evaporation opening 7a.

[0047] In the electron beam irradiation step, the electron beam source 8 irradiates the deposited film on the substrate 100 with an electron beam 19. The electron beam irradiation step is a post-annealing treatment. After the deposition step is completed, a post-annealing treatment may be performed for the purpose of imparting properties to the deposited film, promoting oxidation, improving film density, etc.

[0048] For example, by heating an oxide film formed by vacuum deposition to several hundred degrees in an electric furnace, the optical absorption of the film can be eliminated and crystallization can be promoted. Also, by heating a metal film such as Ag or Al with a thickness of several to several tens of nanometers to several hundred degrees in an electric furnace, the surface of the film can be transformed into an island-like shape, imparting properties such as the surface plasmon effect.

[0049] In the electron beam irradiation process, the control unit 31 can send a command to the electron gun power supply 32 to change the acceleration voltage output and the output of the current flowing through the cathode from the outputs in the deposition process. The control unit 31 also sends a command to the electron gun power supply 32 to adjust the scanning coil current waveform of the current flowing through the scanning coil 17. This allows the electron beam 19 to be scanned over part or all of the surface of the deposition film formed on the substrate 100, and the electron beam 19 can be uniformly irradiated onto the target location.

[0050] In this way, the indirect heating evaporation apparatus 1 can perform post-annealing treatment after film formation in the same vacuum chamber. This reduces the time required for the film formation process. In addition, there is no need for a dedicated heat treatment device for post-annealing treatment, such as an electric furnace, which reduces manufacturing costs.

[0051] Furthermore, in the post-annealing treatment using an electric furnace, the entire substrate (evaporation target) is placed in a high-temperature environment of several hundred degrees. On the other hand, the post-annealing treatment of this embodiment is performed by irradiating the evaporated film on the substrate 100 with an electron beam 19. This allows for effective heat treatment of the surface layer of the evaporated film, and allows the substrate (evaporation target) to be selected without considering heat resistance limitations.

[0052] Furthermore, the indirect heating evaporation apparatus 1 can eliminate the need to remove the substrate 100 from the vacuum chamber and place it in an electric furnace. This allows the indirect heating evaporation apparatus 1 to significantly reduce the heating and cooling times required for the evaporation process and post-annealing process. Furthermore, it can reduce the risks to workers associated with working at high temperatures in a vacuum chamber or the like.

[0053] 2. Second embodiment <Configuration of indirect heating evaporation equipment> Next, the configuration of an indirect heating evaporation apparatus according to a second embodiment will be described with reference to FIG. FIG. 5 is a schematic diagram showing the configuration of the indirect heating evaporation device according to the second embodiment during electron beam irradiation.

[0054] The indirect heating evaporation apparatus 1B according to the second embodiment has the same configuration as the indirect heating evaporation apparatus 1 according to the first embodiment, and further includes a detection unit 40. The detection unit 40 detects the surface condition of the evaporated film formed on the substrate. The detection unit 40, the control unit 31, and the electron beam generating source 8 constitute a surface treatment apparatus according to the present invention. The surface treatment apparatus is an apparatus that performs an electron beam irradiation process on an object on which an evaporated film has been formed.

[0055] 5, the substrate holder 6 holds a substrate 100 and a monitor substrate 101 on its underside. The substrate 100 corresponds to the product deposition object according to the present invention, and the monitor substrate 101 corresponds to the monitor deposition object according to the present invention. The monitor substrate 101 is located radially inward of the substrate holder 6 relative to the substrate 100.

[0056] When forming a vapor-deposited film on the substrate 100, the rotary drive shaft 23 is rotated to rotate the substrate holder 6, and the substrate 100 is moved above the evaporation opening 7a. As a result, the substrate 100 and the monitor substrate 101 face the liner 2 or the electron beam passage opening 3b, which are arranged at positions facing the evaporation opening 7a.

[0057] In the evaporation process, evaporated films are formed on the substrate 100 and the monitor substrate 101. Then, in the electron beam irradiation process, the electron beam source 8 irradiates the evaporated films on the substrate 100 and the monitor substrate 101 with an electron beam 19.

[0058] The detection unit 40 has a light source 41, a light receiving unit 42, and a light quantity measuring device 43. The light quantity measuring device 43 corresponds to the light quantity measuring unit according to the present invention. The light source 41 irradiates light onto the vapor-deposited film formed on the monitor substrate 101. The light receiving unit 42 receives light reflected by the vapor-deposited film formed on the monitor substrate 101.

[0059] The size of the monitor substrate 101 and the position where it is held by the substrate holder 6 do not change. Therefore, the light source 41 can irradiate light onto the deposited film without adjusting its installation position. Furthermore, the light receiving unit 42 can receive light reflected by the deposited film without adjusting its installation position. In other words, the light source 41 and the light receiving unit 42 do not need to be repositioned depending on the type of substrate 100. This allows the light source 41 to accurately irradiate light onto the deposited film, and the light receiving unit 42 to reliably receive the reflected light.

[0060] The light receiving unit 42 converts the light reflected from the deposited film into an electrical signal and sends it to the light amount meter 43. The light amount meter 43 measures the amount of light reflected from the deposited film received by the light receiving unit 42. The light amount meter 43 detects the wavelength from the measured light amount and sends the detected wavelength to the control unit 31. When the wavelength of the reflected light reaches a predetermined attenuation amount, the control unit 31 sends a command to the electron gun power supply 32 to stop the emission of the electron beam 19. This makes it possible to quantitatively monitor the surface condition of the deposited film and ensure the reproducibility of the process for forming the deposited film.

[0061] In this embodiment, the substrate holder 6 is configured to hold the monitor substrate 101. However, the indirect heating evaporation apparatus according to the present invention may be configured so that the substrate holder 6 does not hold the monitor substrate 101. In this case, the light source 41 irradiates light onto the evaporated film formed on the substrate 100. The light receiving unit 42 receives light reflected by the evaporated film formed on the substrate 100.

[0062] In this embodiment, Ag is used as the deposition material 4, and an Ag film is formed as the deposition film. Then, in the electron beam irradiation process (post-annealing treatment), the Ag film is irradiated with an electron beam 19 to deform the Ag film into an island structure. Then, coloring (plasmonic color) characteristics due to the surface plasmon effect are imparted to the Ag film. Note that the deposition material 4 is not limited to Ag.

[0063] Aluminum foil with a thickness of 50 μm was used for the substrate 100 and the monitor substrate 101. A dielectric layer such as Al2O3, SiO2, or TiO2 is formed as an underlayer on the surfaces of the substrate 100 and the monitor substrate 101. In the vapor deposition process of this embodiment, first, an electron beam 19 is irradiated onto the bottom of the liner 2 filled with Al2O3 in an oxygen atmosphere to form an Al2O3 film with a thickness of 15 to 30 nm on the surfaces of the substrate 100 and the monitor substrate 101.

[0064] Next, the holder 3 is rotated, and the bottom of the liner 2 filled with Ag is irradiated with the electron beam 19. Then, when the thickness of the Ag film reaches a predetermined value, the control unit 31 moves the shutter 5 to close the evaporation opening 7a of the deposition-preventing cover 7, and stops the output of the electron beam generating source 8. In this embodiment, an Ag film having a thickness of 7 to 15 nm is formed on the surfaces of the substrate 100 and the monitor substrate 101.

[0065] Next, the electron beam irradiation process is performed after the movement process. At this time, the shutter 5 is moved to open the evaporation opening 7a of the deposition-preventing cover 7, and the output of the electron beam generation source 8 is started. At this time, the electron beam 19 is generated at an acceleration voltage of, for example, 4 kV (75 mA). This heats the Ag film and transforms it into island-like structures.

[0066] In the electron beam irradiation step, a triangular wave or a sine wave with a scanning frequency in the range of 20 to 500 Hz is output to the scanning coil 17, for example, to generate a magnetic field within the scanning coil 17. Then, an electron beam 19 emitted from the electron beam generating source 8 is scanned over a part or the entire surface of the Ag film.

[0067] The electron gun power supply 32 precisely controls the irradiation time of the electron beam 19 to uniformize the amount of electron beam 19 irradiated onto the Ag film. For example, if the substrate holder 6 is rotationally driven, the speed of the substrate 100 and the monitor substrate 101 passing through the area irradiated with the electron beam 19 will be faster on the outer periphery than on the inner periphery. Therefore, the irradiation time of the electron beam 19 on the outer periphery of the substrate 100 and the monitor substrate 101 is made longer than on the inner periphery.

[0068] Before irradiation with the electron beam 19, the Ag film shows only a slight change in color compared to the filled Ag. After irradiation with the electron beam 19, the surface color of the Ag film changes to various colors depending on the film thickness of the Al2O3 film and the Ag film. The size and density of the Ag structure change depending on the irradiation dose of the electron beam 19. Therefore, in this embodiment, the irradiation dose of the electron beam 19 is adjusted based on optical monitoring by the detection unit 40 to ensure the reproducibility of the coloring (plasmonic color) in the Ag film.

[0069] In this embodiment, the light source 41 irradiates white light onto the Ag film of the monitor substrate 101. The light receiving unit 42 receives the light reflected by the Ag film, converts it into an electrical signal, and sends it to the light amount meter 43. The light amount meter 43 measures the reflectance of a specific wavelength (hereinafter referred to as the "monitoring wavelength") among the wavelengths of the reflected light, and sends the measurement result to the control unit 31. This allows the control unit 31 to detect the reflectance of the monitoring wavelength in real time.

[0070] The monitor wavelength may be, for example, a reflectance increasing wavelength, a reflectance decreasing wavelength, or both. The reflectance increasing wavelength is a wavelength at which the reflectance increases when irradiated with the electron beam 19. The reflectance decreasing wavelength is a wavelength at which the reflectance decreases when irradiated with the electron beam 19. The reflectance increasing wavelength and the reflectance decreasing wavelength are determined depending on the combination of the dielectric layer (in this embodiment, an Al2O3 film) and the vapor deposition film (in this embodiment, an Ag film).

[0071] The control unit 31 has a memory unit that stores a reflectance judgment value. The reflectance judgment value is set in advance for a monitoring wavelength corresponding to the type of deposited film. When the reflectance of the monitoring wavelength reaches the judgment value, the control unit 31 sends a stop signal to the electron gun power supply 32. This causes the electron gun power supply 32 to stop irradiating the Ag film with the electron beam 19.

[0072] The reflectance may be measured over the entire wavelength range of the reflected light in increments of several nanometers. In this case, irradiation of the Ag film with the electron beam 19 is stopped when the spectral value of the entire reflected light falls within a preset target spectrum range.

[0073] Fig. 6 is a diagram showing the surface of a vapor-deposited film (Ag film) before and after irradiation with an electron beam. The vapor-deposited film (Ag film) shown in Fig. 6 is a vapor-deposited film of the first example (hereinafter referred to as "first vapor-deposited film"). The first vapor-deposited film was formed by setting the thickness of the Al2O3 film to 30 nm and the thickness of the Ag film to 7 nm.

[0074] As shown in Figure 6, when the first deposited film is irradiated with the electron beam 19, the surface of the first deposited film changes into an island shape. Then, the reflectance of a specific wavelength of reflected light from the first deposited film increases, and the amount of light absorbed also increases. As a result, the first deposited film changes from nearly colorless to blue.

[0075] Fig. 7 is a graph showing the spectrum of reflected light from the first evaporated film. In Fig. 7, the horizontal axis represents wavelength, and the vertical axis represents reflectance. The solid line represents the reflected light from the first evaporated film after irradiation with electron beam 19. The dotted line represents the reflected light from the first evaporated film before irradiation with electron beam 19.

[0076] As shown in FIG. 7, the monitoring wavelengths for the first vapor-deposited film are set to 445 nm and 600 nm. The wavelength of 445 nm is a wavelength at which reflectance increases, and the wavelength of 600 nm is a wavelength at which reflectance decreases. The control unit 31 stops irradiating the first vapor-deposited film with the electron beam 19 when the reflectance at the wavelength of 600 nm reaches a minimum value (e.g., 0.4%) and the reflectance at the wavelength of 445 nm is 8% or higher, satisfying the determination condition. As a result, the surface of the first vapor-deposited film develops a blue color. In other words, the color tone of the surface of the first vapor-deposited film changes.

[0077] FIG. 8 is a graph showing the spectrum of reflected light from a vapor-deposited film of the second example (hereinafter referred to as the "second vapor-deposited film"). The second vapor-deposited film was formed by setting the thickness of the Al2O3 film to 15 nm and the thickness of the Ag film to 4.5 nm. The horizontal axis in FIG. 8 represents wavelength, and the vertical axis represents reflectance. The solid line represents the reflected light from the second vapor-deposited film after irradiation with electron beam 19. The dotted line represents the reflected light from the second vapor-deposited film before irradiation with electron beam 19.

[0078] As shown in FIG. 8, the monitoring wavelength for the second vapor-deposited film is set to 550 nm. The wavelength of 550 nm is a wavelength at which reflectance decreases. When a determination condition is met that the reflectance at the wavelength of 550 nm is a minimum value (for example, 7%), the control unit 31 stops irradiating the second vapor-deposited film with the electron beam 19. As a result, the surface of the second vapor-deposited film develops a reddish-purple color. In other words, the color tone of the surface of the second vapor-deposited film changes.

[0079] In this way, the indirect heating evaporation apparatus 1B can appropriately determine the timing to stop the electron beam 19 by detecting the state of the surface of the evaporated film irradiated with the electron beam 19. As a result, it is possible to ensure the reproducibility of the process related to the deposition (forming) of the evaporated film.

[0080] The detection unit 40 of the indirect heating evaporation apparatus 1B has a light source 41, a light receiving unit 42, and a light quantity meter 43. The light emitted from the light source 41 is irradiated onto the surface of the evaporated film, and the reflected light is received by the light receiving unit 42, and the light quantity meter 43 measures the reflectance (reflected light quantity) of the monitoring wavelength in real time. This makes it possible to quantitatively monitor the amount of light absorption by the evaporated film due to the post-annealing treatment in real time, thereby improving the accuracy of reproducibility of the process related to the deposition (formation) of the evaporated film.

[0081] 3. Second embodiment <Configuration of indirect heating evaporation equipment> Next, the configuration of an indirect heating evaporation apparatus according to a third embodiment will be described with reference to FIGS. Fig. 9 is a schematic diagram showing the state during evaporation of the indirect heating evaporation apparatus according to the third embodiment. Fig. 10 is a schematic diagram showing the state during electron beam irradiation of the indirect heating evaporation apparatus according to the third embodiment.

[0082] The indirect heating evaporation apparatus 1C according to the third embodiment has the same configuration as the indirect heating evaporation apparatus 1 according to the first embodiment. The only difference between the indirect heating evaporation apparatus 1C and the first embodiment is the substrate holder 6C. Therefore, the substrate holder 6C will be described here, and redundant description of the same configuration as the first embodiment will be omitted.

[0083] As shown in Figures 9 and 10, the substrate holder 6C is disposed above the adhesion-preventing cover 7. The substrate holder 6C is formed in the shape of a circular plate, and holds a plurality of substrates 100 on its underside. A rotary drive shaft 23 is connected to the center of the upper surface of the substrate holder 6C. The rotary drive shaft 23 rotates the substrate holder 6C, and moves the plurality of substrates 100 held by the substrate holder 6 in the horizontal direction. The rotary drive shaft 23 is cooled so as not to impair its rotation function.

[0084] In the evaporation process, the indirect heating evaporation apparatus 1C is capable of forming an evaporated film on a plurality of substrates 100. As shown in Fig. 9, the plurality of substrates 100 held by the substrate holder 6C face the liner 2 or the electron beam passage opening 3b arranged at a position opposite the evaporation opening 7a.

[0085] In the deposition process, the rotary drive shaft 23 is driven to rotate continuously to rotate the substrate holder 6C. Then, the electron beam source 8 irradiates the bottom of the liner 2 with an electron beam 19. As a result, the bottom of the liner 2 is heated by electron impact, and the deposition material 4 is heated and evaporated.

[0086] The evaporated particles 20 produced by evaporation of the evaporation material 4 pass through the evaporation openings 7a of the deposition cover 7 and proceed toward the plurality of substrates 100 held by the rotating substrate holder 6. As a result, the evaporated particles 20 are deposited on the plurality of substrates 100 to form evaporated films of a desired thickness. At this time, because the substrate holder 6C is continuously rotated, it is possible to prevent unevenness in the thickness of the evaporated films on the plurality of substrates 100.

[0087] Next, after the moving step, the electron beam irradiation step is performed. In the moving step, the rotary drive shaft 21 rotates the holder 3 and moves it to the second position (see FIG. 10). As a result, the electron beam passage opening 3b is positioned above the electron beam generation source 8. As a result, the electron beam generation source 8 faces the multiple substrates 100 via the electron beam passage opening 3b and the evaporation opening 7a.

[0088] In the electron beam irradiation process, the rotary drive shaft 23 is rotated to continuously rotate the substrate holder 6C. Then, the electron beam source 8 irradiates the deposited films of the plurality of substrates 100 held by the rotating substrate holder 6C with the electron beam 19. The electron beam 19 is irradiated, for example, sequentially onto the deposited films of the substrates 100 that have been moved into the irradiation area.

[0089] The above describes embodiments of the present invention. However, the present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the invention as defined in the claims. For example, the above-described embodiments are intended to provide a detailed and easy-to-understand description of the present invention, and the present invention is not necessarily limited to those including all of the described configurations. Furthermore, it is possible to replace part of the configuration of one embodiment with the configuration of another embodiment, or to add the configuration of another embodiment to the configuration of one embodiment. Furthermore, it is possible to add, delete, or replace part of the configuration of each embodiment with other configurations.

[0090] In the first to third embodiments described above, the electron beam generating source 8 that irradiates the bottom of the liner 2 with the electron beam 19 also serves as the electron beam generating source that irradiates the evaporated film on the substrate 100 (monitor substrate 101) with the electron beam 19. This allows the number of parts in the indirect heating evaporation apparatus 1, 1B to be reduced. However, the indirect heating evaporation apparatus according to the present invention may be configured to include an electron beam generating source that irradiates the evaporated film on the evaporation target with the electron beam, in addition to the electron beam generating source that irradiates the bottom of the liner 2 with the electron beam.

[0091] The detection unit 40 of the second embodiment described above is composed of a light source 41, a light receiving unit 42, and a light quantity measuring device 43. However, the detection unit according to the present invention may be any unit that detects the state of the surface of the deposited film formed on the deposition target, and may be composed of, for example, a camera and an image processing unit. In this case, the timing to stop the irradiation of the electron beam is determined based on the distance between particles on the surface of the deposited film and the size of the particles.

[0092] The detection unit according to the present invention may also be configured by a combination of a light source for illuminating the interior of the chamber, a color difference meter, a spectrophotometer, a color luminance meter, etc. In this case, the change in color tone on the surface of the deposited film is monitored. However, such equipment may not be suitable for real-time measurement. Therefore, during monitoring, the electron beam irradiation and the rotation (movement) of the substrate holder are stopped, and the color tone is measured. In other words, it is advisable to intermittently measure the color tone and irradiate the electron beam. [Explanation of symbols]

[0093] REFERENCE SIGNS LIST 1, 1B, 1C...indirect heating evaporation apparatus, 2...liner (container), 3...holder (container holding part), 3a...holding hole, 3b...opening for electron beam passage, 4...evaporation material, 5...shutter, 6, 6C...substrate holder (holding part for evaporated object), 7...deposition prevention cover, 7a...evaporation opening, 8...electron beam generating source, 9...acceleration power supply, 10...cathode power supply, 11...scanning coil power supply, 12...electron gun control unit, 16...anode, 17...scanning coil, 18...block, 19...electron beam, 20...evaporated particle, 21...rotation drive shaft (moving mechanism), 22...opening / closing drive unit, 23...rotation drive shaft, 31...control unit, 32...electron gun power supply, 34...coil current control unit, 35...cathode current control unit, 36...emission current control unit, 37...acceleration voltage control unit, 40...detection unit, 41...light source, 42...light receiving unit, 43...light quantity meter (light quantity measuring unit), 100...substrate (product deposition object), 101...monitor substrate (monitor deposition object)

Claims

1. an electron beam generating source that irradiates an electron beam onto a vapor deposition film formed by deposition of evaporated particles on a deposition target; a detection unit for detecting a surface condition of the vapor-deposited film; a control unit that stops the emission of the electron beam from the electron beam generation source in accordance with the detection result of the detection unit. Surface treatment equipment.

2. The detection unit includes a light source that irradiates the vapor-deposited film with light; a light receiving section that receives light reflected by the vapor deposition film; a light amount measuring unit that measures the amount of reflected light received by the light receiving unit; The surface treatment device according to claim 1 .

3. The deposition object includes a deposition object for a product and a deposition object for a monitor, the vapor deposition film is formed on the product deposition object and the monitor deposition object, The light source irradiates light onto a vapor deposition film formed on the monitoring deposition object. The surface treatment device according to claim 2 .

4. an electron beam generating source irradiates an electron beam onto a vapor deposition film formed by deposition of evaporated particles on a deposition target; a detection unit detecting a surface condition of the vapor-deposited film; A control unit stops the emission of the electron beam from the electron beam generation source in accordance with the detection result of the detection unit. Surface treatment method.

5. a container filled with a deposition material; a container holder that holds the container with the bottom exposed; an electron beam source that emits an electron beam at the bottom of the vessel; a moving mechanism that moves the container holding unit; a deposition target holding unit that holds a deposition target on which evaporated particles of the deposition material are deposited to form a deposition film, the container holder has an opening for passing an electron beam; The moving mechanism moves the container holder to a first position where the container is located above the electron beam generation source and a second position where the electron beam passage opening is located above the electron beam generation source. Indirect heating vapor deposition equipment.

6. The electron beam passage opening is set to a size that allows the electron beam passing therethrough to be irradiated onto the deposition film of the deposition target held by the deposition target holder. The indirect heating evaporation apparatus according to claim 5 .

7. A scanning coil is provided to scan the electron beam emitted from the electron beam generating source over a part or the entire surface of the deposition film on the container and the deposition target. The indirect heating evaporation apparatus according to claim 5 .

8. a vapor deposition step in which an electron beam generating source emits an electron beam into a container filled with a vapor deposition material, and vapor particles of the vapor deposition material are deposited on a deposition target to form a vapor deposition film; a moving step in which a moving mechanism moves a container holder that holds the container to position an electron beam passage opening of the container holder above the electron beam generation source; an electron beam irradiation step in which the electron beam generation source emits an electron beam that passes through the electron beam passing opening and irradiates the deposited film on the deposition target. Indirect heating evaporation method.

9. In the electron beam irradiation step, a detection unit detecting a surface condition of the vapor-deposited film; A control unit stops the emission of the electron beam from the electron beam generation source in accordance with the detection result of the detection unit. The indirect heating vapor deposition method according to claim 8.

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