Wireless power supply system

Abstract

To provide a semiconductor device, a battery pack, and an electronic device with reduced power consumption.SOLUTION: A semiconductor device switches potentials of two nodes via three transistors to detect a voltage. One of a source and a drain of a transistor M1 is electrically connected to a terminal 111, the other of the source and the drain is electrically connected to a non-inverting input of a comparator 101 through a node ND1. One of the source and the drain of a transistor M2 is electrically connected to a terminal 112, the other is electrically connected to one of the source and the drain of a transistor M3 through a node ND2, and the other of the source and the drain of the transistor M3 is electrically connected to a terminal 114. A capacitor C1 is provided between the node ND1 and the node ND2. An inverting input of the comparator 101 is electrically connected to a terminal 115, and an output of the comparator is electrically connected to the terminal 115.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a semiconductor device, a battery pack, and an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field relates to an article, a method, or a manufacturing method. , process, machine, manufacture, or composition of matter (This is related to the above.)

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. It refers to semiconductor elements such as transistors and diodes, as well as semiconductor devices. The circuit is a semiconductor device. Also, the circuit is applicable to display devices, light-emitting devices, lighting devices, electro-optical devices, and Electronic devices may include semiconductor elements and semiconductor circuits. Devices such as semiconductor devices, lighting devices, electro-optical devices, imaging devices, and electronic equipment are also called semiconductor devices. There are cases where this happens. [Background technology]

[0004] In recent years, various types of energy storage devices such as lithium-ion secondary batteries, lithium-ion capacitors, and air batteries have become available. In particular, lithium-ion batteries, which have high output and high energy density, are being developed. The secondary battery is used in mobile phones, smartphones, tablets, or laptop computers. Mobile information terminals, game devices, portable music players, digital cameras, medical equipment, or hardware Hybrid electric vehicle (HEV), electric vehicle (EV), or plug-in hybrid vehicle (P Along with the development of the semiconductor industry, next-generation clean energy vehicles such as HEVs and electric motorcycles are also expected to become available. Demand for it has expanded rapidly, and it is now used in today's information society as a source of rechargeable energy. It has become indispensable.

[0005] The storage device detects abnormalities during charging and discharging, such as over-discharging, over-charging, over-current, or short circuit. Therefore, they are usually equipped with a battery protection circuit.

[0006] The battery protection circuit collects data such as voltage and current to detect abnormalities during charging or discharging. Battery protection circuits are provided in the charge path or discharge path based on observed data. This controls the opening and closing of the switch that is connected to the battery, thereby protecting the battery cells from overcharging or over-discharging (see, for example, patent document 1). (See reference 1.) [Prior art documents] [Patent documents]

[0007] [Patent Document 1] U.S. Patent Application Publication No. 2016-118821 Summary of the Invention [Problem to be solved by the invention]

[0008] An object of one embodiment of the present invention is to provide a semiconductor device or the like with reduced power consumption. Another object is to provide a semiconductor device or the like with good voltage detection accuracy. Another object is to provide a semiconductor device or the like with stable operation. It is an object of the present invention to provide a semiconductor device or the like having high reliability. It is one of the objects to provide a novel semiconductor device. One of our goals is to provide the following.

[0009] The description of these problems does not preclude the existence of other problems. The embodiment does not necessarily solve all of these problems. Problems other than these may be solved by the description. The above is self-evident from the description, drawings, claims, etc. From the above descriptions, it is possible to extract other issues. [Means for solving the problem]

[0010] One aspect of the present invention is a semiconductor device including first to third switches, a first capacitance element, and a comparator. , one terminal of the first switch is electrically connected to the first terminal, and the other terminal of the first switch The terminal of the second switch is electrically connected to the non-inverting input of the comparator, and one terminal of the second switch is electrically connected to the non-inverting input of the first switch. The other terminal of the second switch is electrically connected to one terminal of the third switch. The other terminal of the third switch is electrically connected to the third terminal, and the first capacitor The capacitance element is provided between the other terminal of the first switch and one terminal of the third switch. The inverting input of the comparator is electrically connected to the fourth terminal, and the output of the comparator is connected to the fifth terminal. The semiconductor device is electrically connected to the

[0011] Another embodiment of the present invention is a semiconductor device including first to third transistors, a first capacitor, and a comparator. and a first transistor, wherein one of the source and the drain of the first transistor is electrically connected to the first terminal. The other of the source or drain of the first transistor is connected to the non-inverting The second transistor is electrically connected to the input, and one of the source and drain of the second transistor is connected to the second terminal The other of the source and drain of the second transistor is electrically connected to the third transistor. the source or drain of the third transistor; The other of the drains is electrically connected to the third terminal, and the first capacitance element is between the other of the source or drain of the first transistor and the source or drain of the third transistor The inverting input of the comparator is electrically connected to the fourth terminal, and The output is a semiconductor device electrically connected to the fifth terminal.

[0012] The first transistor preferably includes an oxide semiconductor in a semiconductor layer. At least one of the first transistor and the third transistor includes an oxide semiconductor in a semiconductor layer. It is preferable to do so.

[0013] Another embodiment of the present invention is a semiconductor device including first to sixth switches, a first capacitor, and a second capacitor. and a comparator, one terminal of the first switch being electrically connected to the first terminal. The other terminal of the first switch is electrically connected to one terminal of the sixth switch, and the second One terminal of the switch is electrically connected to the second terminal, and the other terminal of the second switch is The other terminal of the third switch is electrically connected to the third terminal one terminal of the fourth switch is electrically connected to the first terminal, and one terminal of the fourth switch is electrically connected to the The other terminal of the switch is electrically connected to the non-inverting input of the comparator, forming a fifth switch One terminal of the fifth switch is electrically connected to the second terminal, and the other terminal of the sixth switch is electrically connected to the the first capacitance element is electrically connected to the other terminal of the first switch, The second capacitance element is provided between one terminal of the third switch and the other terminal of the fourth switch. and the other terminal of the fifth switch, and the inverting input of the comparator is connected to the fourth terminal and The output of the comparator is electrically connected to the fifth terminal of the semiconductor device. It is a location.

[0014] Another embodiment of the present invention is a semiconductor device including any one of the above semiconductor devices provided over a flexible substrate; a secondary battery, the negative electrode of which is electrically connected to the first terminal, and the positive electrode of which is The battery pack is electrically connected to the third terminal.

[0015] Another embodiment of the present invention is an electronic device including the battery pack and a power receiving device. [Effects of the Invention]

[0016] According to one embodiment of the present invention, a semiconductor device or the like with reduced power consumption can be provided. Alternatively, it is possible to provide a semiconductor device or the like with good voltage detection accuracy. It is possible to provide a semiconductor device having high reliability. Alternatively, it is possible to provide a semiconductor device or the like with good productivity. Alternatively, a novel semiconductor device or the like can be provided.

[0017] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have all of these effects. Effects other than these may be included in the description, This becomes clear from the description, drawings, claims, etc. From any description, it is possible to extract effects other than these. [Brief explanation of the drawings]

[0018] [Figure 1]1A and 1B are diagrams illustrating an example of the configuration of a semiconductor device. [Figure 2] FIG. 2 is a timing chart illustrating an example of the operation of the semiconductor device. [Figure 3] 3A and 3B are diagrams illustrating an example of the operation of the semiconductor device. [Figure 4] 4A and 4B are diagrams illustrating an example of the operation of the semiconductor device. [Figure 5] 5A and 5B are diagrams showing an example of the configuration of a conventional semiconductor device. [Figure 6] 6A to 6D are diagrams showing circuit symbols for transistors. [Figure 7] FIG. 7 is a diagram illustrating a configuration example of a semiconductor device. [Figure 8] FIG. 8 is a diagram illustrating a configuration example of a semiconductor device. [Figure 9] FIG. 9 is a diagram illustrating a configuration example of a semiconductor device. [Figure 10] FIG. 10 is a timing chart illustrating an example of the operation of the semiconductor device. [Figure 11] FIG. 11 is a diagram illustrating an example of the operation of the semiconductor device. [Figure 12] FIG. 12 is a diagram illustrating an example of the operation of the semiconductor device. [Figure 13] FIG. 13 is a diagram illustrating an example of the operation of the semiconductor device. [Figure 14] FIG. 14 is a diagram illustrating an example of the operation of the semiconductor device. [Figure 15] 15A and 15B are diagrams illustrating an example of the configuration of a semiconductor device. [Figure 16] FIG. 16 is a diagram illustrating a configuration example of a semiconductor device. [Figure 17] FIG. 17 is a diagram illustrating a configuration example of a semiconductor device. [Figure 18] 18A to 18C are diagrams showing examples of the configuration of a transistor. [Figure 19] 19A to 19C are diagrams showing examples of the configuration of a transistor. [Figure 20]20A to 20C are diagrams showing examples of the configuration of a transistor. [Figure 21] 21A to 21C are diagrams showing configuration examples of a secondary battery. [Figure 22] 22A and 22B are diagrams showing examples of the configuration of a wound body and a secondary battery. [Figure 23] 23A to 23C are diagrams showing examples of the configuration of a battery pack. [Figure 24] 24A to 24D are diagrams showing examples of the configuration of a battery pack. [Figure 25] 25A to 25D are diagrams showing examples of the configuration of a battery pack. [Figure 26] 26A and 26B are diagrams showing configuration examples of secondary batteries. [Figure 27] 27A and 27B are diagrams showing an example of an electronic device. [Figure 28] 28A and 28B are diagrams showing an example of an electronic device. [Figure 29] FIG. 29 is a diagram illustrating an example of an electronic device. [Figure 30] 30A to 30D are diagrams showing the verification results of the circuit operation. [Figure 31] 31A to 31D are diagrams showing the verification results of the circuit operation. DETAILED DESCRIPTION OF THE INVENTION

[0019] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various forms and details without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. It should be noted that the following description of the invention is not intended to be limiting. In this case, the same parts or parts having similar functions are designated by the same reference numerals in different drawings. The repeated explanation will be omitted.

[0020] In addition, the position, size, range, etc. of each component shown in the drawings are for the purpose of facilitating understanding of the invention. Therefore, the actual location, size, range, etc. may not be shown. The invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings. In the actual manufacturing process, resist masks, etc., may be unintentionally damaged by etching or other processes. However, this may not be reflected in the diagram to make it easier to understand.

[0021] In addition, in top views (also called "plan views") and perspective views, etc., Therefore, descriptions of some components may be omitted.

[0022] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring." Furthermore, the terms "electrode" and "wiring" are used interchangeably to refer to the plural "electrodes" and "wirings." This also includes cases where the "line" is formed as a single unit.

[0023] In this specification, a "terminal" in an electric circuit refers to an input or output of a current, It refers to the part where pressure is input or output, or where a signal is received or transmitted. In some cases, a part of the wiring or electrode functions as a terminal.

[0024] In this specification, the terms "above" and "below" refer to the positional relationship of components directly above or below each other. For example, "electrode on insulating layer A" is not limited to being below and in direct contact with the insulating layer A. If the expression is "B", electrode B does not need to be formed directly on insulating layer A, The inclusion of other components between the edge layer A and the electrode B is not excluded.

[0025] The source and drain functions may also be different when using transistors with different polarities or when using circuits When the direction of the current changes during circuit operation, they are interchanged depending on the operating conditions. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. Let's say.

[0026] In this specification, "electrically connected" refers to a direct connection and a connection made by some means. This includes cases where the device is connected via "something that has an electrical effect." "Something that has an electrical effect" means something that allows the transmission and reception of electrical signals between connected objects. Therefore, even if it is expressed as "electrically connecting," In real circuits, there may be no physical connections, just wires running along the circuit. .

[0027] In this specification, "parallel" means that two lines are at an angle of -10° to 10°. This refers to the state in which the object is arranged at an angle between -5° and 5°. Also, "perpendicular" and "orthogonal" mean, for example, that two straight lines are at an angle of 80° or more and 100° or less. This refers to a state in which the object is arranged at an angle between 85° and 95°.

[0028] In this specification and elsewhere, terms such as "identical," "same," and "equal" are used to refer to counting values and measurement values. When we say "even" or "uniform," we mean plus or minus 20 unless otherwise specified. This includes a margin of error of %.

[0029] Voltage is the potential difference between a certain potential and a reference potential (for example, ground potential or source potential). Therefore, voltage and potential can often be used interchangeably. In this specification and the like, unless otherwise specified, voltage and potential can be interchangeable. It shall be.

[0030] Even when written as "semiconductor," if the conductivity is sufficiently low, it may be written as "insulator." Therefore, it is possible to use "semiconductor" instead of "insulator." In this case, the boundary between "semiconductor" and "insulator" is vague, and it is difficult to make a strict distinction between the two. Therefore, the terms "semiconductor" and "insulator" used in this specification can be interpreted interchangeably. This may be possible.

[0031] Also, even if a material is written as a "semiconductor," if the material has a sufficiently high conductivity, it may be written as a "conductor." Therefore, it is possible to use "semiconductor" instead of "conductor." In this case, the boundary between "semiconductor" and "conductor" is vague, and it is difficult to make a strict distinction between the two. Therefore, the terms "semiconductor" and "conductor" in this specification can be interpreted interchangeably. This may be possible.

[0032] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. It does not indicate any order or ranking such as the order of processes or stacking. In addition, even if a term is not accompanied by an ordinal number in this specification, etc., it is possible to avoid confusion of the constituent elements. In order to avoid this, ordinal numbers may be used in the claims. Even if a term has an ordinal number in In addition, even if a term is accompanied by an ordinal number in this specification, Ordinal numbers may be omitted in patent claims, etc.

[0033] In this specification, the "on state" of a transistor means that the source and This refers to a state in which the drain is considered to be electrically short-circuited (also called a "conducting state"). The "off state" of a transistor means that the source and drain of the transistor are electrically isolated. This refers to a state in which the conduction state can be considered to be non-conductive (also called a "non-conductive state").

[0034] In this specification, the term "on-state current" refers to the current flowing between the source and the transistor when the transistor is in the on state. The term "off-state current" may refer to the current that flows between the drain and the transistor. It can also refer to the current that flows between the source and drain when the device is in an open state.

[0035] In addition, in this specification and the like, a high power supply potential VDD (hereinafter simply referred to as "VDD", "H potential", or The term "high" (also referred to as "high") refers to a power supply potential that is higher than the low power supply potential VSS. The low power supply potential VSS (hereinafter simply referred to as "VSS", "L potential", or "L") is This refers to a power supply potential that is lower than the high power supply potential VDD. Also, the ground potential is referred to as VDD or VS. For example, if VDD is at ground potential, VSS can be used as a If VSS is at ground potential, VDD is at ground potential. .

[0036] In this specification, the term "gate" refers to a gate electrode and a part or all of a gate wiring. The gate wiring is a wiring that connects the gate electrode of at least one transistor and another This refers to wiring that electrically connects electrodes or other wiring.

[0037] In this specification, the source includes a source region, a source electrode, and a source wiring. The source region is a semiconductor layer with a resistivity of less than a certain value. The source electrode is the conductive layer connected to the source region. The source wiring is a wiring that connects the source electrode of at least one transistor with another electrode or wiring. This refers to the wiring that electrically connects the

[0038] In this specification, the term "drain" refers to a drain region, a drain electrode, and a drain electrode. The drain region is a part or all of the wiring. The drain electrode is the conductive layer connected to the drain region. The drain wiring is a wiring that is connected to the drain electrode of at least one transistor. This refers to wiring that electrically connects electrodes or other wiring.

[0039] In addition, in drawings, etc., the potentials of the wiring and electrodes are shown in order to make them easier to understand. "H" indicating high potential or "L" indicating low potential may be added adjacent to the electrode. In addition, wiring and electrodes where a potential change occurs are marked with "H" or "L" in a circle. When a transistor is in an off state, the transistor is An "x" symbol may be added.

[0040] (Embodiment 1) A semiconductor device according to one embodiment of the present invention will be described with reference to drawings.

[0041] <Voltage detection circuit 9900> First, a conventional example of a semiconductor device will be described. As a conventional example of a semiconductor device, a resistive component shown in FIG. An example of the configuration of a voltage detection circuit 9900 that uses voltage will be described.

[0042] The voltage detection circuit 9900 includes a resistor R1, a resistor R2, and a comparator 9901 (comparison circuit The resistor R1 is provided between the terminal 9911 and the node ND9, and the resistor R2 is provided between the terminal 9911 and the node ND9. The node ND9 is connected to a comparator 990. The inverting input of comparator 9901 is electrically connected to terminal 9915. and the output of the comparator 9901 is electrically connected to a terminal 9913. .

[0043] The terminal 9912 is electrically connected to the terminal 201 and the positive electrode of the secondary battery 300. 911 is electrically connected to the terminal 202 and the negative electrode of the secondary battery 300. 9900 indicates that the voltage supplied to the secondary battery 300 via the terminals 201 and 202 is constant. When the voltage exceeds a certain value, the voltage at terminal 9913 changes from L to H.

[0044] The operation of the voltage detection circuit 9900 will be described with reference to FIG. The comparator operates when the voltage applied to the non-inverting input is less than or equal to the voltage applied to the inverting input. L is output to the output, and the voltage input to the non-inverting input exceeds the voltage input to the inverting input. In this case, H is output.

[0045] For example, if the resistance value of resistor R1 is 1MΩ, the resistance value of resistor R2 is 3MΩ, and the voltage at terminal 9915 is If the voltage at terminal 9911 is 0V, the voltage at terminal 9912 is 4.0V. When V is reached, the voltage at node ND9 becomes 1.0 V due to the resistor voltage division. 1.0 V is supplied to the non-inverting input of the comparator 9901. Since 1.0V is supplied to the inverting input via pin 9915, comparator 990 L is output from 1. Therefore, the voltage at terminal 9913 becomes L.

[0046] When the voltage at pin 9912 exceeds 4.0V, the voltage at node ND9 also exceeds 1.0V. , H is output from the comparator 9901. Therefore, the voltage at the terminal 9913 becomes H. For example, if the voltage at terminal 9912 increases by 0.4V from 4.0V to 4.4V, node N The voltage at D9 increases by 0.1V from 1.0V to 1.1V.

[0047] In the conventional voltage detection circuit 9900 that uses a resistive voltage divider, Since a current It always flows through terminal 9912, it is difficult to reduce power consumption. The voltage change at node ND9 is smaller than the voltage change at node ND1, so the detection sensitivity is low. There was a problem.

[0048] <Voltage detection circuit 100> FIG. 1 illustrates a configuration example of a voltage detection circuit 100 as an example of a semiconductor device according to one embodiment of the present invention. This will be explained using 1A.

[0049] [Configuration example] The voltage detection circuit 100 includes a switch SW1, a switch SW2, a switch SW3, a capacitor C1, and a comparator 101 (comparison circuit). One terminal of the switch SW1 is connected to terminal 1. 11, and the other terminal is electrically connected to node ND1. One terminal of W2 is electrically connected to the terminal 114, and the other terminal is electrically connected to the node ND2. One terminal of the switch SW3 is electrically connected to the node ND2, and the other terminal The terminal is electrically connected to the terminal 112 .

[0050] The capacitor C1 is provided between the node ND1 and the node ND2. The input is electrically connected to node ND1, and the inverting input is electrically connected to terminal 115. The output of the comparator 101 is electrically connected to the terminal 113 .

[0051] The terminal 112 is electrically connected to the terminal 201 and the positive electrode of the secondary battery 300. The voltage detection circuit 10 is electrically connected to the terminal 202 and the negative electrode of the secondary battery 300. 0 indicates that the voltage supplied to the secondary battery 300 via the terminals 201 and 202 is equal to or greater than a certain value. When it is turned up, the voltage at the terminal 113 changes from L to H.

[0052] In this specification, a switch refers to a device that is in a conducting state (on state) or a non-conducting state (off state). It is a device that has the function of controlling whether or not current flows by switching on or off. A switch is a device that has the function of selecting and switching the path through which current flows. , electrical switches, mechanical switches, etc. can be used. The device is not limited to a specific one as long as it can control the current.

[0053] An example of an electrical switch is a transistor (e.g., a bipolar transistor, M OS transistors, etc.), diodes (e.g., PN diodes, PIN diodes, Schottky diode, MIM (Metal Insulator Metal) diode MIS (Metal Insulator Semiconductor) diodes diodes, diode-connected transistors, etc.), or logic circuits that combine these. When a transistor is used as a switch, the polarity of the transistor The conductivity type is not particularly limited.

[0054] An example of a mechanical switch is a digital micromirror device (DMD). There are switches that use MEMS (microelectromechanical systems) technology. The switch has a mechanically movable electrode, and the movement of the electrode Thus, the device operates by controlling conduction and non-conduction.

[0055] [Modification] The voltage detection circuit 100 includes switches SW1, SW2, and SW3. FIG. 1B shows an example of the configuration of a voltage detection circuit 100T in which the above is replaced with a transistor.

[0056] The voltage detection circuit 100T includes a transistor M1, a transistor M2, a transistor M3, a capacitor The source of the transistor M1 is connected to the capacitor C1, and the comparator 101 (comparison circuit) is connected to the source of the transistor M1. One of the source and drain is electrically connected to the terminal 111, and the other of the source and drain is The gate of the transistor M1 is electrically connected to the terminal G1. One of the source and drain of the transistor M2 is electrically connected to the terminal 114. The other of the source and the drain is electrically connected to the node ND2. The gate of transistor M2 is electrically connected to terminal G2. One of the source and drain is electrically connected to the node ND2, and the other is connected to the terminal 112. The gate of the transistor M3 is electrically connected to the terminal G3.

[0057] The capacitor C1 is provided between the node ND1 and the node ND2. The input is electrically connected to node ND1, and the inverting input is electrically connected to terminal 115. The output of the comparator 101 is electrically connected to the terminal 113 .

[0058] The transistors M1, M2, and M3 have channels formed. A transistor that contains an oxide semiconductor, which is a type of metal oxide, in its semiconductor layer (called an "OS transistor") The oxide semiconductor preferably has a band gap of 2 eV or more. Therefore, the off-state current is extremely small, and the power consumption of the voltage detection circuit 100T can be reduced. Furthermore, the power consumption of the semiconductor device including the voltage detection circuit 100T can be reduced. When an OS transistor is used for the transistor M1, the charge supplied to the node ND1 is retained for a long period of time. This is preferable because it can be maintained.

[0059] When a transistor is used as a switch, the source or drain of the transistor One of the drains corresponds to one end (one terminal) of the switch, and the other corresponds to the source or drain of the transistor. The other end of the drain corresponds to the other end (the other terminal) of the switch.

[0060] In addition, each of the transistors M1, M2, and M3 is a diode. A double-gate transistor may also be used. An example of a 150A circuit symbol is shown below.

[0061] The transistor 150A has a structure in which a transistor Tr1 and a transistor Tr2 are connected in series. In FIG. 6A, either the source or the drain of the transistor Tr1 is connected to the terminal S. The other of the source and drain of the transistor Tr1 is electrically connected to the It is electrically connected to either the source or drain of transistor Tr2. The other of the drains is electrically connected to terminal D. In this case, the gates of the transistors Tr1 and Tr2 are electrically connected and the terminal The state in which it is electrically connected to the child G is shown.

[0062] The transistor 150A shown in FIG. 6A changes the potential of the terminal G, thereby switching the terminals S and D. Therefore, the double-gate transistor has the function of switching between the conductive state and the non-conductive state. The transistor 150A is a transistor Tr1 and a transistor Tr2. In other words, in Figure 6A, the transistor Either the source or the drain of the resistor 150A is electrically connected to the terminal S. The other end of the drain is electrically connected to terminal D, and the gate is electrically connected to terminal G. It can be said that.

[0063] In addition, each of the transistors M1, M2, and M3 is a transistor A triple-gate transistor may also be used. An example of the circuit symbol for star 150B is shown below.

[0064] The transistor 150B is connected to the transistor Tr1, the transistor Tr2, and the transistor In FIG. 6B, the source of the transistor Tr1 is connected in series with the transistor Tr3. One of the drains is electrically connected to the terminal S, and the source or drain of the transistor Tr1 is The other input is electrically connected to either the source or the drain of the transistor Tr2. The other of the source or drain of transistor Tr2 is connected to the source or drain of transistor Tr3. The other of the source or drain of transistor Tr3 is electrically connected to 6B shows a state in which the transistor T The gates of r1, transistor Tr2, and transistor Tr3 are electrically connected, 10 shows a state in which the terminal G is electrically connected to the terminal G.

[0065] The transistor 150B shown in FIG. 6B changes the potential of the terminal G, thereby switching the terminals S and D. Therefore, the triple gate type The transistor 150B includes the transistor Tr1 and the transistor Tr2. , and the transistor Tr3 is included, functioning as one transistor. That is, in FIG. 6B, either the source or the drain of transistor 150B is connected to terminal S. The other of the source and drain is electrically connected to terminal D, and the gate is It can be said that it is electrically connected to terminal G.

[0066] have multiple gates, such as transistor 150A and transistor 150B, and A transistor with multiple gates electrically connected is called a "multi-gate transistor." These are sometimes called "multi-gate transistors" or "multi-gate transistors."

[0067] In addition, each of the transistors M1, M2, and M3 is a buffer. The transistor may have a back gate. 6D shows an example of a circuit symbol for a transistor 150C. An example of the circuit symbol for Star 150D is shown below.

[0068] The transistor 150C has a gate and a back gate electrically connected to each other. The back gate of the transistor 150D is electrically connected to the terminal BG. The gate is arranged so that the channel forming region of the semiconductor layer is sandwiched between the gate and back gate. The back gate can function similarly to a gate.

[0069] By electrically connecting the gate and back gate, the on-current of the transistor can be increased. In addition, by independently changing the back gate potential, the threshold voltage of the transistor can be adjusted. The voltage can be varied to any desired value.

[0070] [Example of operation] An example of the operation of the voltage detection circuit 100 will be described with reference to FIGS. 2 to 4. 3 and 4 are timing charts illustrating the operation of the voltage detection circuit 100. 100 is a diagram showing the operating state of the device.

[0071] In this embodiment, in the charging operation of the secondary battery 300, if the charging voltage is 4V or less, When the charge voltage exceeds 4V, the potential of terminal 113 becomes H. It is also assumed that 3 V is supplied to terminal 114 and 1 V is supplied to terminal 115. Also, assume that the voltage at terminal 201 changes from 3.5V to 4.4V during charging.

[0072] [Period T1] During the period T1, the switches SW1 and SW2 are turned on, and the switch SW 3 is turned off (see Figure 3A). Then, the voltage at node ND1 becomes 0V, and The voltage of the node ND2 becomes 3 V. 1 V is input to the inverting input of the comparator 101, and the non-inverting Therefore, the output of the comparator 101 is L, and the output of the terminal 11 The voltage at 3 also becomes L.

[0073] [Period T2] During the period T2, the switches SW1 and SW2 are turned off, and the switch SW 3 is turned on (see Figure 3B). Then, the voltage at node ND2 becomes 3.5V, The voltage at node ND1 becomes 0.5 V. 1 V is input to the inverting input of comparator 101. Therefore, the output of the comparator 101 remains low. The voltage at terminal 113 remains at L.

[0074] Furthermore, when the voltage at terminal 201 rises, the voltage at terminal 112 and node ND2 also rises. Therefore, the voltage at node ND1 also rises.

[0075] [Period T3] Following the period T2, the voltage at the terminal 201 also rises during the period T3. During the period T3, the voltage at the terminal 201 rises to 4V. It shall rise to

[0076] When the voltage at terminal 201 becomes 4V, the voltage at terminal 112 and node ND2 also becomes 4V. Also, the voltage of the node ND1 becomes 1V (see FIG. 4A). 1V is input to the input of the comparator 101, and 1V is also input to the non-inverting input. The output remains at L, and the voltage at terminal 113 also remains at L.

[0077] [Period T4] During the period T4, the voltage at the terminal 201 also rises. It shall rise to 0.4V.

[0078] When the voltage at terminal 201 exceeds 4V, the voltage at terminal 112 and node ND2 also exceeds 4V. The voltage at node ND1 also exceeds 1V. A voltage exceeding 1 V is input to the non-inverting input of the comparator 101. The output of the FET 111 goes high, and the voltage at the terminal 113 also goes high.

[0079] When the voltage at terminal 201 becomes 4.4V, the voltage at node ND2 also becomes 4.4V, and The voltage across D1 becomes 1.4V (see Figure 4B).

[0080] The voltage detection circuit 100 according to one aspect of the present invention differs from the conventional voltage detection circuit 9900 in that: No current It is generated during operation, so power consumption can be reduced. Since the voltage change amounts of the electrodes ND1 and ND2 are equal, the detection sensitivity is good.

[0081] This embodiment mode may be implemented by appropriately combining with the configurations described in other embodiment modes and examples. It is possible to implement this.

[0082] (Embodiment 2) In this embodiment mode, a modification of the semiconductor device shown in the above embodiment mode will be described. For matters not described in the embodiments, the above embodiments may be referred to.

[0083] <Voltage detection circuit 100A> A voltage detection circuit 100A will be described as a modified example of a semiconductor device according to one embodiment of the present invention. The voltage detection circuit 100A is a modification of the voltage detection circuit 100 shown in the above embodiment. Here is an example.

[0084] [Configuration example] FIG. 7 shows an example of the configuration of the voltage detection circuit 100A. Add switches SW4, SW5, SW6, and capacitor C2 to the configuration of 00. It has a configuration that

[0085] Specifically, one terminal of the switch SW1 is electrically connected to the terminal 111, and the other terminal One terminal of the switch SW2 is electrically connected to the terminal 114. One terminal of the switch SW3 is electrically connected to the node ND1, and the other terminal is electrically connected to the node ND2. The first terminal is electrically connected to the node ND2, and the other terminal is electrically connected to the terminal 112. One terminal of the switch SW4 is electrically connected to the terminal 111, and the other terminal is connected to the node One terminal of the switch SW5 is electrically connected to the terminal 114. The other terminal of the switch SW6 is electrically connected to the node ND4. The other terminal is electrically connected to a node ND4.

[0086] The capacitor C1 is provided between the node ND1 and the node ND2. The capacitor C2 is provided between the node ND3 and the node ND4. The non-inverting input of the comparator 101 is electrically connected to the node ND3. and the inverting input is electrically connected to terminal 115. The output of comparator 101 is It is electrically connected to the terminal 113 .

[0087] The terminal 112 is electrically connected to the terminal 201 and the positive electrode of the secondary battery 300. The voltage detection circuit 10 is electrically connected to the terminal 202 and the negative electrode of the secondary battery 300. 0A indicates that the voltage supplied to the secondary battery 300 via the terminals 201 and 202 is a constant value. When this occurs, the voltage at the terminal 113 changes from L to H.

[0088] [Variation 1] A voltage detection circuit 100B, which is a modification of the voltage detection circuit 100A, is shown in FIG. 100B has terminals 111A and 111B instead of terminal 111, and terminal 114 Instead, it has terminals 114A and 114B.

[0089] In the voltage detection circuit 100B, one terminal of the switch SW1 is electrically connected to the terminal 111A. One terminal of the switch SW4 is electrically connected to the terminal 111B. One terminal of switch SW2 is electrically connected to terminal 114A, and one terminal of switch SW5 is electrically connected to terminal 114B. is electrically connected to terminal 114B.

[0090] In the voltage detection circuit 100B, one terminal of the switch SW2 and one terminal of the switch SW5 are connected to each other. In addition, in FIG. 8, terminal 111A and terminal 111B are both electrically connected to terminal 202, but terminal 111A and terminal 111B may be electrically connected to different terminals or wirings, respectively.

[0091] [Variation 2] The switches SW1 to SW6 constituting the voltage detection circuit 100A are replaced with transistors. An example of the configuration of the voltage detection circuit 100TA after the replacement is shown in FIG. The voltage detection circuit 100TA is a modified example of the voltage detection circuit 100T. In the configuration, transistors M4, M5, M6, and capacitor C2 are added. It has an added configuration.

[0092] Specifically, the voltage detection circuit 100TA includes a transistor M1, a transistor M2, a transistor Transistor M3, transistor M4, transistor M5, transistor M6, capacitor C1, capacitor C2, and the comparator 101. One of the terminals is electrically connected to the terminal 111, and the other of the source and drain is electrically connected to the node ND1. The gate of the transistor M1 is electrically connected to the terminal G1. One of the source and drain of the transistor M2 is electrically connected to the terminal 114. The other of the drains is electrically connected to a node ND2. The source or drain of transistor M3 is electrically connected to node G2. The other of the source and drain is electrically connected to the terminal 112. The gate of the transistor M3 is electrically connected to the terminal G3.

[0093] One of the source and drain of the transistor M4 is electrically connected to the terminal 111. The other of the source and drain of transistor M4 is electrically connected to node ND3. The terminal G4 is electrically connected to the source or drain of the transistor M5. The other of the source and drain is electrically connected to the node ND4. The gate of the transistor M5 is electrically connected to the terminal G5. Either the source or the drain of M6 is electrically connected to the node ND1. The other drain of the transistor M6 is electrically connected to the node ND4. 6 and electrically connected to each other.

[0094] The capacitor C1 is provided between the node ND1 and the node ND2. The capacitor C2 is provided between the node ND3 and the node ND4. The non-inverting input of the comparator 101 is electrically connected to the node ND3. and the inverting input is electrically connected to terminal 115. The output of comparator 101 is It is electrically connected to the terminal 113 .

[0095] Like transistors M1 to M3, transistors M4 to M6 are also OS transistors. In particular, when an OS transistor is used for the transistor M4, the node ND This is preferable because the charge supplied to the transistor M3 can be held for a long period of time. When an OS transistor is used for node ND5, the charge supplied to node ND4 can be retained for a long period of time. This is preferable because it is possible to

[0096] [Example of operation] An example of the operation of the voltage detection circuit 100A will be described with reference to FIGS. 10 to 14. 11 to 14 are timing charts illustrating the operation of the pressure detection circuit 100A. 4A and 4B are diagrams illustrating an operating state of the voltage detection circuit 100A.

[0097] In this embodiment, in the charging operation of the secondary battery 300, if the charging voltage is 4V or less, When the potential of terminal 113 is L, and the charging voltage exceeds 4V, the voltage of terminal 113 becomes H. It is also assumed that 1.5 V is supplied to terminal 114 and 1 V is supplied to terminal 115. Also, assume that the voltage at terminal 201 changes from 3.5V to 4.4V during charging.

[0098] [Period T1] During the period T1, the switches SW1, SW2, SW4 and S Switch W5 is turned on, and switches SW3 and SW6 are turned off (see Figure 11). Then, the voltages of the nodes ND1 and ND3 become 0V, and the voltages of the nodes ND2 and The voltage at node ND4 becomes 1.5V. 1V is input to the inverting input of comparator 101. Therefore, the output of the comparator 101 is L. As a result, the voltage at the terminal 113 also becomes L.

[0099] [Period T2] During the period T2, the switches SW1, SW2, SW4 and S Switch W5 is turned off, and switches SW3 and SW6 are turned on (see Figure 12). Then, the voltage at node ND2 rises by 2V from 1.5V to 3.5V, and The voltage of the node ND1 rises from 0V to 2V. Also, when the switch SW6 is in the ON state, Therefore, the node ND1 and the node ND4 are electrically connected. At this time, the voltage at node ND4 rises from 1.5V to 0.5V. Therefore, the voltage at node ND3 becomes 0.5V, and the non-inverting input of comparator 101 is 0. 5V is input to the inverting input of comparator 101. The output of the parameterizer 101 remains at L, and the voltage at the terminal 113 also remains at L.

[0100] Furthermore, when the voltage at terminal 201 rises, the voltage at terminal 112 and node ND2 also rises. Therefore, the voltages of the nodes ND1, ND3, and ND4 also rise.

[0101] [Period T3] Following the period T2, in the period T3, as the potential of the terminal 201 rises, the terminals 112 and During the period T3, the voltage at the terminal 201 rises. It rises to V.

[0102] When the voltage at terminal 201 becomes 4V, the voltage at terminal 112 and node ND2 also becomes 4V. Also, the voltages of nodes ND1 and ND4 become 2.5V, and the voltage of node ND3 becomes (See FIG. 13.) Therefore, 1V is input to the inverting input of the comparator 101. 1V is input to the non-inverting input of the comparator 101. The output of O1 remains at L, and the voltage at terminal 113 also remains at L.

[0103] [Period T4] During the period T4, the voltage at the terminal 201 also rises. It shall rise to 0.4V.

[0104] When the voltage at terminal 201 exceeds 4V, the voltage at terminal 112 and node ND2 also exceeds 4V. The voltage at node ND3 also exceeds 1V. A voltage exceeding 1 V is input to the non-inverting input of the comparator 101. The output of the FET 111 goes high, and the voltage at the terminal 113 also goes high.

[0105] When the voltage at the terminal 201 becomes 4.4V, the voltage at the node ND2 also becomes 4.4V. The voltages at nodes ND1 and ND4 are 2.9V, and the voltage at node ND3 is 1.4V. (See Figure 14.)

[0106] The voltage detection circuit 100A shown in this embodiment has a voltage applied to the terminal 114 that is higher than that of the voltage detection circuit 100. Therefore, the power consumption is lower than that of the voltage detection circuit 100. In addition, the voltage required for operation can be reduced, The load on the circuit is reduced. Therefore, the semiconductor device using the voltage detection circuit 100A operates stably. This can improve reliability.

[0107] This embodiment mode may be implemented by appropriately combining with the configurations described in other embodiment modes and examples. It is possible to implement this.

[0108] (Embodiment 3) In this embodiment, a wireless power supply system ("wireless power supply system") using a semiconductor device according to one embodiment of the present invention will be described. An example of the configuration of the wireless power supply system (also called "wireless power supply") will be described below.

[0109] There are several methods for realizing wireless power supply: radio wave, electric field coupling, magnetic field resonance, and electromagnetic induction. In particular, the electromagnetic induction method is easy to design the circuit and has high power transmission efficiency. It is known as a ferroelectric crystal, and is being considered for use in mobile devices such as personal digital assistants. The international standards for wireless power supply using the induction method are the Qi standard, PMA standard, and AirFuel There are inductive standards, etc.

[0110] In addition, the magnetic resonance method requires a more complex circuit design than the electromagnetic induction method and has lower power transmission efficiency, It is possible to transmit power over longer distances than with the electromagnetic induction method, and is suitable for EVs (Electric Vehicles) The international standard for wireless power supply using magnetic resonance is , WPT1 standard, WPT2 standard, WPT3 standard, AirFuel Resonant standard etc.

[0111] A semiconductor device according to one embodiment of the present invention can be used in various wireless power supply systems. Furthermore, the semiconductor device according to one embodiment of the present invention can be used in wireless power supply systems of various standards. It is possible.

[0112] The wireless power feeding system exemplified in this embodiment includes a power transmitting device 400 and a power receiving device 450. An example of the configuration of the power transmitting device 400 is shown in FIG. 15A. An example of the configuration of the power receiving device 450 is shown in FIG. 15B. vinegar.

[0113] The configuration of the power transmitting device 400 illustrated in FIG. 15A and the configuration of the power receiving device 450 illustrated in FIG. 15B The configuration is an example, and it is not necessary to include all the components. 0 may have the necessary components among the components shown in FIGS. 15A and 15B. Furthermore, the device may have components other than those shown in Figures 15A and 15B.

[0114] <Power transmission device 400> The power transmitting device 400 includes a power transmission control circuit 411, a matching circuit 412, and a power radiation circuit 413. A power source 401 is connected to the power transmitting device 400. The power source 401 supplies power to the power transmitting device 400. The frequency fG of the AC power supplied by the power supply 401 is There is no limitation on frequency, for example, submillimeter waves of 300 GHz to 3 THz, millimeter waves of 3 0GHz to 300GHz, microwaves from 3GHz to 30GHz, and ultra-high frequency waves from 30GHz to 300GHz. 0MHz to 3GHz, ultra-short wave 30MHz to 300MHz, short wave 3MHz to 3 0MHz, medium wave 300kHz~3MHz, long wave 30kHz~300kHz, and ultra-long waves of 3 kHz to 30 kHz.

[0115] The power transmission control circuit 411 converts the power supplied from the power source 401 into a power The power radiation circuit 413 has a function of supplying the power to the power transmitting antenna 402. The power radiation circuit 413 transmits AC power supplied from the power supply 401 to the power transmission antenna. The antenna 402 functions to radiate the radiation into the external space.

[0116] If the impedance of the power source 401 and the impedance of the power radiation circuit 413 are different, A part of the AC power supplied from 01 is reflected according to the impedance difference. The matching circuit 412 cannot efficiently supply power to the power radiation circuit 413. The impedance of the power supply 40 is approximately equal to the impedance of the power radiation circuit 413. 1 to the power radiation circuit 413 efficiently.

[0117] <Power receiving device 450> The power receiving device 450 shown in FIG. 15B includes a power receiving antenna 403, a power receiving circuit 451, and a charge control circuit. 452 and a charge / discharge control circuit 453. The power receiving device 450 also has a terminal 461, a terminal 4 15B, the positive electrode of the secondary battery 300 is connected to the terminal 461. The terminal 462 is electrically connected to the negative electrode of the secondary battery 300 .

[0118] The power receiving circuit 451 has a resonance frequency f determined based on the inductance of the power receiving antenna 403. R. The frequency fG of the AC power radiated from the power transmitting antenna 402 and the power receiving circuit 45 By matching the resonant frequency fR of the power receiving antenna 403 with that of the power receiving antenna 403, an induced electromotive force is generated in the power receiving antenna 403. Therefore, power supply from the power transmitting device 400 to the power receiving device 450 can be realized.

[0119] The power receiving circuit 451 also includes a rectifier circuit. It has the function of converting AC power into DC power.

[0120] The charging control circuit 452 adjusts the DC power supplied from the power receiving circuit 451 to an appropriate voltage. For example, the charging control circuit 452 may be provided with a function such as a switching regulator. Just add it.

[0121] Furthermore, a normally-off CPU (Noff-CPU) may be used for the charge control circuit 452. A normally-off CPU is one that is in a non-conducting state (off state) even when the gate voltage is 0V. The transistor is a normally-off transistor. The off-type transistor can be realized by an OS transistor. This allows the power consumption of the charge control circuit 452 during standby operation to be reduced.

[0122] The AC power induced in the power receiving antenna 403 is transmitted to the power receiving circuit 451 and the charge control circuit 452. The secondary battery 300 can be charged via the power receiving device 450. Specifically, the terminals 461 and 463 can be used to connect to external devices and By connecting the external device to the power supply, the power of the secondary battery can be supplied to the external device. The power received from the power transmitting device 400 can be supplied to the external device.

[0123] The charge / discharge control circuit 453 has a function of monitoring the charge / discharge status of the secondary battery 300. The control circuit 453 includes an overcurrent detection circuit and a voltage detection circuit. When power is supplied from the 300 to an external device, a current exceeding the specified value (also known as "overcurrent") may occur. If so, the charge / discharge control circuit 453 turns off the transistor 471 to stop the power supply. Also, if a current exceeding a specified value flows during charging of the secondary battery 300, The charge / discharge control circuit 453 turns off the transistor 472 to stop charging. In addition, if a voltage exceeding a specified value (also called "overvoltage") occurs during charging of the secondary battery 300, When the voltage is applied to the secondary battery 300, the charge / discharge control circuit 453 turns off the transistor 472. The charging can be stopped by switching the battery to this state.

[0124] In this embodiment, a power transmitting antenna 402 shown in FIG. 15A and a power receiving antenna shown in FIG. 15B are The power transmitting antenna 403 is shown with a circuit symbol indicating a coil. The power receiving antenna 403 is not limited to a coil antenna, and may be any antenna suitable for the power transmission method. For example, it may be a linear or plate antenna. Antennas such as traveling wave antennas, EH antennas, magnetic field antennas, and dielectric antennas are used. That's fine.

[0125] The voltage detection circuit 100 according to one embodiment of the present invention can be used in the charge / discharge control circuit 453. In addition, some or all of the transistors included in the wireless power supply system may be OS transistors. A data can be used.

[0126] For example, by using OS transistors as the transistors included in the power receiving device 450, The power receiving device 450 can be provided on a flexible substrate, thereby reducing the volume of the power receiving device 450. Furthermore, by providing the power receiving device 450 on a flexible substrate, For example, the power receiving device 450 may be provided along the side of the secondary battery 300 .

[0127] In addition, charge / discharge control circuits, overcurrent detection circuits, voltage detection circuits, and abnormal The detection circuit, secondary battery control system, etc. are integrated into the BTOS (Battery Operate System). ting system, or Battery oxide semiconduct It may be referred to as "or".

[0128] OS transistors have a significantly low off-state current, which reduces the power consumption of wireless power transfer systems. Furthermore, the off-state current of OS transistors hardly increases even in high-temperature environments. Specifically, the off-state current hardly increases even at ambient temperatures above room temperature and below 200°C. OS transistors have a high dielectric strength between the source and drain. By using OS transistors as the transistors that support the This makes it possible to realize a highly reliable wireless power supply system.

[0129] This embodiment mode may be implemented by appropriately combining with the configurations described in other embodiment modes and examples. It is possible to implement this.

[0130] (Fourth embodiment) In this embodiment mode, a transistor structure applicable to the semiconductor device described in the above embodiment mode will be described. Specifically, a stack of transistors having different electrical characteristics will be described. The configuration will be described. By adopting this configuration, it is possible to increase the degree of freedom in designing the semiconductor device. In addition, by stacking transistors with different electrical characteristics, This allows for increased integration of devices.

[0131] The semiconductor device shown in FIG. 16 includes a transistor 550, a transistor 500, and a capacitor 600. FIG. 18A is a cross-sectional view of the transistor 500 in the channel length direction. 18B is a cross-sectional view of the transistor 500 in the channel width direction, and FIG. 18C is a cross-sectional view of the transistor 550 in a cross section in the channel width direction.

[0132] The transistor 500 is an OS transistor. Since the current is extremely small, by using this for a transistor included in a semiconductor device, It is possible to retain the written data voltage or charge for a long period of time. Refresh operations are infrequent or not required, so The power consumption of the semiconductor device can be reduced.

[0133] The semiconductor device described in this embodiment includes a transistor 550, a transistor The transistor 500 is located above the transistor 550. The capacitor 600 is provided above the transistor 550 and the transistor 500. It is being done.

[0134] The transistor 550 is disposed on a substrate 311 and includes a conductor 316, an insulator 315, and a substrate 316. 11, a semiconductor region 313 serving as a source region or a drain region, The transistor 550 has a resistive region 314a and a low resistive region 314b. For example, this can be applied to the transistors included in the comparator 101 in the above embodiment. It is possible.

[0135] Transistor 550 is formed on the top surface and channel of semiconductor region 313 as shown in FIG. 18C. The side surfaces in the width direction are covered with the conductor 316 via the insulator 315. By making the resistor 550 a fin type, the effective channel width is increased, This can improve the on-characteristics of the transistor 550. In addition, the contribution of the electric field of the gate electrode can be increased, which can improve the off-state characteristics of the transistor 550. .

[0136] The transistor 550 may be either a p-channel type or an n-channel type.

[0137] The region where the channel of the semiconductor region 313 is formed, the region nearby, the source region, or the drain region In the low resistance region 314a and the low resistance region 314b, which are the drain region, silicon is It preferably contains a semiconductor such as a silicon-based semiconductor, and preferably contains single crystal silicon. Or Ge (germanium), SiGe (silicon germanium), GaAs (gallium It may be formed of a material containing gallium aluminum arsenide (GaAlAs), GaAlAs (Gallium Aluminum Arsenide), etc. By applying stress to the crystal lattice and changing the lattice spacing, we can control the effective mass of silicon. Alternatively, GaAs and GaAlAs may be used to form a transistor. The 550 is a HEMT (High Electron Mobility Transistor) tor) can also be used.

[0138] The low resistance region 314a and the low resistance region 314b are semiconductor regions applied to the semiconductor region 313. In addition to the body material, elements that impart n-type conductivity, such as arsenic or phosphorus, or p-type conductivity, such as boron, are added. The element imparting electrical conductivity is included.

[0139] The conductor 316 that functions as the gate electrode is made of an element that gives n-type conductivity, such as arsenic or phosphorus. Semiconductor materials such as silicon that contain elements that impart p-type conductivity, such as silicon or boron A conductive material such as a metal material, an alloy material, or a metal oxide material can be used.

[0140] In addition, since the work function is determined by the conductor material, by selecting the conductor material, Specifically, the threshold voltage of the transistor can be adjusted by using titanium nitride as the conductor. It is preferable to use materials such as tantalum nitride or tantalum nitride. To achieve this, metal materials such as tungsten and aluminum are used as layers for the conductor. is preferable, and tungsten is particularly preferable in terms of heat resistance.

[0141] Note that the transistor 550 shown in FIG. 16 is an example, and the circuit configuration is not limited to this. For example, a semiconductor device may be used as an OS transistor. A unipolar circuit consisting of only n-channel transistors (such as n-channel transistors) 17, the structure of the transistor 550 is The transistor may have a similar structure to that of the transistor 500 using a semiconductor. Details of 500 will be given later.

[0142] Over the transistor 550, an insulator 320, an insulator 322, an insulator 324, and an insulator The bodies 326 are stacked one on top of the other.

[0143] The insulators 320, 322, 324, and 326 may be, for example, oxide. Silicon, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, oxide Aluminum oxynitride, aluminum nitride oxide, aluminum nitride, etc. may be used.

[0144] In this specification, silicon oxynitride refers to a material containing more oxygen than nitrogen as its composition. Silicon nitride oxide refers to a material that contains more nitrogen than oxygen. In this specification, aluminum oxynitride refers to a material with a large amount of aluminum. It refers to a material that contains more oxygen than nitrogen, and aluminum oxide nitride is a material with a indicates a material that contains more nitrogen than oxygen.

[0145] The insulator 322 smooths out the steps caused by the transistor 550 and other components provided below it. For example, the top surface of the insulator 322 may have a function as a planarizing film. To improve flatness, the surface is flattened by a planarization process such as chemical mechanical polishing (CMP). It's fine.

[0146] The insulator 324 is also provided with a substrate 311 or a transistor 550 or the like. A film having a barrier property that prevents diffusion of hydrogen and impurities is used in the area where the capacitor 500 is provided. It is preferable that

[0147] An example of a film having a barrier property against hydrogen is silicon nitride formed by a CVD method. Here, a semiconductor having an oxide semiconductor such as the transistor 500 can be used. When hydrogen diffuses into the element, the characteristics of the semiconductor element may be deteriorated. A film that suppresses hydrogen diffusion is used between the transistor 500 and the transistor 550. Specifically, the film that suppresses hydrogen diffusion is a film that has a small amount of hydrogen desorption. The membrane.

[0148] The amount of desorbed hydrogen can be analyzed using, for example, thermal desorption spectroscopy (TDS). For example, the amount of hydrogen desorption from the insulator 324 can be measured by TDS analysis when the surface temperature of the film is 5 In the range of 0 to 500°C, the amount of desorption converted to hydrogen atoms is Converted to 10 x 10 15 atoms / cm 2 Less than or equal to 5 x 10 15 at oms / cm 2 The following is fine.

[0149] It is preferable that the insulator 326 has a lower dielectric constant than the insulator 324. For example, The dielectric constant of the insulator 326 is preferably less than 4, more preferably less than 3. The relative dielectric constant of the insulating material 26 is preferably 0.7 times or less than the relative dielectric constant of the insulating material 324, and more preferably 0.6 times or less. It is more preferable to use a material with a low dielectric constant as the interlayer film to reduce the parasitic capacitance that occurs between wiring. It is possible.

[0150] In addition, the insulators 320, 322, 324, and 326 have a capacitance of 600 Alternatively, the conductor 328 and the conductor 330 connected to the transistor 500 are embedded. The conductors 328 and 330 function as plugs or wiring. In addition, the conductor having the function of a plug or wiring can be used to integrate multiple components. In addition, in this specification and the like, the same reference numerals may be used to refer to wiring and devices connected to the wiring. In other words, when a part of the conductor functions as a wiring, , and a portion of the conductor may also function as a plug.

[0151] The materials for each plug and wiring (conductor 328, conductor 330, etc.) include metal materials, alloys, and the like. Conductive materials such as gold, metal nitride, or metal oxide materials are used as single or multilayered layers. High-melting materials such as tungsten and molybdenum, which have both heat resistance and electrical conductivity, can be used. It is preferable to use a point material, and it is preferable to use tungsten. It is preferable to form the wiring layer from a low-resistance conductive material such as aluminum or copper. This can reduce the wiring resistance.

[0152] A wiring layer may be provided on the insulator 326 and the conductor 330. For example, in FIG. An insulator 350, an insulator 352, and an insulator 354 are stacked in this order. In addition, a conductor 356 is formed in the insulators 350, 352, and 354. The conductor 356 functions as a plug or wiring that connects to the transistor 550. The conductor 356 is made of the same material as the conductors 328 and 330. It can be established as follows.

[0153] For example, the insulator 350 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator. In addition, the conductor 356 has a barrier property against hydrogen. It is preferable that the insulating material 350 contains a conductor. In particular, the insulating material 350 has a barrier property against hydrogen. In the opening, a conductor having a barrier property against hydrogen is formed. The transistor 550 and the transistor 500 may be separated by a barrier layer. This can suppress the diffusion of hydrogen from the resistor 550 to the transistor 500.

[0154] As a conductor having a barrier property against hydrogen, for example, tantalum nitride or the like is used. In addition, by laminating tantalum nitride and highly conductive tungsten, The diffusion of hydrogen from the transistor 550 can be suppressed while maintaining the conductivity of the transistor 550. In this case, the tantalum nitride layer having a barrier property against hydrogen has a barrier property against hydrogen. It is preferable that the insulating material 350 is in contact with the insulating material 350.

[0155] A wiring layer may be provided on the insulator 354 and the conductor 356. For example, in FIG. An insulator 360, an insulator 362, and an insulator 364 are stacked in this order. In addition, a conductor 366 is formed in the insulators 360, 362, and 364. The conductor 366 functions as a plug or wiring. , conductor 328, and conductor 330 can be formed using the same materials.

[0156] For example, the insulator 360 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator. The conductor 366 has a barrier property against hydrogen. It is preferable that the insulating material 360 contains a conductor. In particular, the insulating material 360 has a barrier property against hydrogen. In the opening, a conductor having a barrier property against hydrogen is formed. The transistor 550 and the transistor 500 may be separated by a barrier layer. This can suppress the diffusion of hydrogen from the resistor 550 to the transistor 500.

[0157] A wiring layer may be provided on the insulator 364 and the conductor 366. For example, in FIG. An insulator 370, an insulator 372, and an insulator 374 are stacked in this order. In addition, a conductor 376 is formed in the insulators 370, 372, and 374. The conductor 376 functions as a plug or wiring. , conductor 328, and conductor 330 can be formed using the same materials.

[0158] For example, the insulator 370 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator. In addition, the conductor 376 has a barrier property against hydrogen. It is preferable that the insulating material 370 contains a conductor. In particular, the insulating material 370 has a barrier property against hydrogen. In the opening, a conductor having a barrier property against hydrogen is formed. The transistor 550 and the transistor 500 may be separated by a barrier layer. This can suppress the diffusion of hydrogen from the resistor 550 to the transistor 500.

[0159] A wiring layer may be provided on the insulator 374 and the conductor 376. For example, in FIG. An insulator 380, an insulator 382, and an insulator 384 are stacked in this order. In addition, a conductor 386 is formed in the insulators 380, 382, and 384. The conductor 386 functions as a plug or wiring. , conductor 328, and conductor 330 can be formed using the same materials.

[0160] For example, the insulator 380 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator. The conductor 386 has a barrier property against hydrogen. It is preferable that the insulating material 380 has a barrier property against hydrogen. In the opening, a conductor having a barrier property against hydrogen is formed. The transistor 550 and the transistor 500 may be separated by a barrier layer. This can suppress the diffusion of hydrogen from the resistor 550 to the transistor 500.

[0161] In the above, the wiring layer including the conductor 356, the wiring layer including the conductor 366, and the conductor 376 The wiring layer including the conductor 386 has been described above. The semiconductor device is not limited to this. Alternatively, the number of wiring layers may be three or less, or five or more wiring layers similar to the wiring layer including the conductor 356 may be provided. Good too.

[0162] On the insulator 384, an insulator 510, an insulator 512, an insulator 514, and an insulator 516 are formed. , and are stacked in this order. It is preferable that either of the insulating layers 516 is made of a material that has a barrier property against oxygen or hydrogen. stomach.

[0163] For example, the insulator 510 and the insulator 514 may include, for example, the substrate 311 or the transistor. Hydrogen and impurities are introduced from the region where the transistor 550 is provided to the region where the transistor 500 is provided. It is preferable to use a film that has a barrier property to prevent diffusion. The same materials as in 4 can be used.

[0164] As an example of a film with barrier properties against hydrogen, silicon nitride formed by CVD is used. Here, a semiconductor element including an oxide semiconductor such as the transistor 500 can be The diffusion of hydrogen may deteriorate the characteristics of the semiconductor device. A film that suppresses hydrogen diffusion is used between the transistor 500 and the transistor 550. Specifically, the film that suppresses hydrogen diffusion is a film that desorbs a small amount of hydrogen. .

[0165] In addition, as a film having a barrier property against hydrogen, for example, an insulator 510 and an insulator 5 14 uses metal oxides such as aluminum oxide, hafnium oxide, and tantalum oxide. It is preferable.

[0166] In particular, aluminum oxide is a material that can absorb oxygen and hydrogen, which can cause fluctuations in the electrical characteristics of transistors. Therefore, it has a high blocking effect that prevents impurities such as acid and moisture from passing through the membrane. Aluminum oxide is resistant to hydrogen, moisture, etc. during and after the transistor manufacturing process. It is possible to prevent impurities from being mixed into the transistor 500. This can suppress the release of oxygen from the oxide that makes up the transistor. Suitable for use as a protective film against 500.

[0167] For example, the insulators 512 and 516 may be made of the same material as the insulator 320. In addition, by using materials with a relatively low dielectric constant for these insulators, , the parasitic capacitance occurring between the wirings can be reduced. The body 516 may be a silicon oxide film, a silicon oxynitride film, or the like.

[0168] In addition, the insulators 510, 512, 514, and 516 are provided with conductors 5 18, and conductors (for example, conductor 503) that constitute the transistor 500 are embedded. The conductor 518 is connected to the capacitor 600 or the transistor 550. The conductor 518 functions as a plug or wiring. It may be provided using the same material as the body 330 .

[0169] In particular, the insulator 510 and the conductor 518 in the area in contact with the insulator 514 are free of oxygen, hydrogen, It is preferable that the conductive material has a barrier property against water. The transistor 550 and the transistor 500 have a barrier property against oxygen, hydrogen, and water. The layer separating the transistor 550 from the transistor 500 can separate the hydrogen Diffusion can be suppressed.

[0170] Above the insulator 516 is the transistor 500 .

[0171] As shown in FIGS. 18A and 18B, transistor 500 includes an insulator 514 and an insulator 516. The conductor 503 is disposed so as to be embedded in the insulator 516, and the insulator 516 and the conductor 5 an insulator 520 disposed on the insulating layer 520; and an insulator 522 disposed on the insulating layer 520. An insulator 524 is disposed on the insulator 522, and an oxide 5 is disposed on the insulator 524. 30a, oxide 530b disposed on oxide 530a, and oxide 530b disposed on oxide 530b. Conductor 542a and conductor 542b are spaced apart from each other, and conductor 542a and conductor The conductive material 542a is disposed on the conductive material 542b, and an opening is formed between the conductive material 542a and the conductive material 542b so as to overlap the conductive material 542a. The insulating layer 580 is formed on the bottom and side of the opening, and the oxide 530c is formed on the bottom and side of the opening. An insulator 545 is disposed on the surface of the insulating layer 545, and a conductor 545 is disposed on the surface of the insulating layer 545. 60 and has.

[0172] As shown in FIGS. 18A and 18B, the oxide 530a, the oxide 530b, the conductor 542a and 542b, and an insulator 544 is disposed between the insulator 580. As shown in FIGS. 18A and 18B, the conductor 560 is preferably made of an insulator 560. 45, and a conductor 560a provided inside the conductor 560a. 18A and 18B. As shown in FIG. 1, an insulator 574 is disposed on top of an insulator 580, a conductor 560, and an insulator 545. It is preferable to place

[0173] In this specification and the like, oxide 530a, oxide 530b, and oxide 530c These are sometimes collectively referred to as oxide 530.

[0174] In the transistor 500, the region where the channel is formed and the vicinity thereof are oxidized. 5 shows a structure in which three layers of an oxide 530a, an oxide 530b, and an oxide 530c are stacked. However, the present invention is not limited to this. For example, a single layer of oxide 530b, an oxide a two-layer structure of oxide 530b and oxide 530a; a two-layer structure of oxide 530b and oxide 530c; Alternatively, a stacked structure of four or more layers may be provided. Although the conductor 560 is shown as a two-layer laminate, the present invention is not limited to this. For example, the conductor 560 may have a single layer structure or a laminated structure of three or more layers. 16 and 18A is an example, and the configuration of the transistor 500 is not limited to this example. The transistors are not limited to any particular type, and an appropriate transistor may be used depending on the circuit configuration and driving method.

[0175] Here, the conductor 560 functions as the gate electrode of the transistor, and the conductors 542a and The conductor 542b functions as a source electrode and a drain electrode, respectively. As shown, the conductor 560 is inserted through the opening in the insulator 580 and the conductors 542a and 542b. The conductor 560, the conductor 542a, and the conductor 542b are formed so as to be embedded in the sandwiched region. The placement of the conductive material 542b is selected to be self-aligned with the opening of the insulator 580. In the transistor 500, the gate electrode is connected between the source electrode and the drain electrode. Therefore, the conductor 560 can be positioned with a margin for alignment. Since the transistor 500 can be formed without any additional steps, the area occupied by the transistor 500 can be reduced. This allows for miniaturization and high integration of semiconductor devices.

[0176] Furthermore, a conductor 560 is formed in a self-aligned manner in the region between the conductors 542a and 542b. Therefore, the conductor 560 has an overlapping area with the conductor 542a or the conductor 542b. This prevents the formation of a gap between the conductor 560 and the conductors 542a and 542b. Therefore, the parasitic capacitance of the transistor 500 can be reduced. It is possible to improve the speed and have high frequency characteristics.

[0177] Conductor 560 may function as a first gate (also called top gate) electrode. In addition, the conductor 503 may function as a second gate (also called a bottom gate) electrode. In this case, the potential applied to the conductor 503 may be different from the potential applied to the conductor 560. The threshold voltage of the transistor 500 is controlled by changing them independently without linking them together. In particular, applying a negative potential to the conductor 503 can turn on the transistor 50 By increasing the threshold voltage of 0 to be higher than 0V, it is possible to reduce the off-current. Therefore, applying a negative potential to the conductor 503 increases the potential of the conductor 560 more than when no negative potential is applied. The drain current when the applied potential is 0V can be reduced.

[0178] The conductor 503 is arranged to overlap the oxide 530 and the conductor 560. Therefore, when a potential is applied to the conductor 560 and the conductor 503, The electric field generated by the conductor 503 is connected to the electric field generated by the conductor 503, and the chalcogenide formed in the oxide 530 The chel forming area can be covered.

[0179] In this specification, a pair of gate electrodes (a first gate electrode and a second gate electrode) The structure of a transistor in which the channel formation region is electrically surrounded by the electric field of This is called a surrounded channel (S-channel) configuration. In this case, the surrounded channel (S-channel) configuration is The acid in contact with the conductor 542a and the conductor 542b which function as the electrode and the drain electrode The side and periphery of the oxide 530 are I-type, just like the channel forming region. In addition, the side and periphery of the oxide 530 in contact with the conductor 542a and the conductor 542b The side can be I-shaped like the channel formation region because it is in contact with the insulator 544. In this specification and the like, Type I can be treated as the same as high-purity genuine, which will be described later. The S-channel configuration disclosed in this specification and the like is applicable to a fin type configuration and a planar type configuration. The S-channel configuration provides resistance to short channel effects. In other words, it is possible to provide a transistor in which the short channel effect is less likely to occur.

[0180] The conductor 503 has the same structure as the conductor 518, and the insulators 514 and 5 Conductor 503a is formed in contact with the inner wall of opening 16, and conductor 503b is formed further inside. In the transistor 500, the conductor 503a and the conductor 503b are Although a stacked structure is shown, the present invention is not limited to this. The electric conductor 503 may be provided as a single layer or as a laminated structure of three or more layers.

[0181] Here, the conductor 503a prevents the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms. It is preferable to use a conductive material that has the function of suppressing the impurities (i.e., the impurities are less likely to permeate). Alternatively, the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.) is suppressed. It is preferable to use a conductive material that has the above-mentioned function (i.e., that is difficult for oxygen to permeate). In this specification, the function of suppressing the diffusion of impurities or oxygen means the function of suppressing the diffusion of the above impurities or oxygen. The function is to suppress the diffusion of any one or all of the above oxygen.

[0182] For example, the conductor 503a has a function of suppressing the diffusion of oxygen, so that the conductor 503b This can prevent the conductivity from decreasing due to oxidation.

[0183] When the conductor 503 also functions as a wiring, the conductor 503b is made of tungsten, copper, Alternatively, it is preferable to use a highly conductive material containing aluminum as a main component. In this embodiment, the conductor 503 is illustrated as a stack of conductors 503a and 503b. However, the conductor 503 may have a single layer structure.

[0184] The insulators 520, 522, and 524 function as a second gate insulating film. It has.

[0185] Here, the insulator 524 in contact with the oxide 530 has more oxygen than the stoichiometric composition. In other words, the insulator 524 has an excess oxygen region. It is preferable that the insulator containing such excess oxygen is connected to the oxide 530. By providing the oxide 530 as a O :oxygen vacanc y), thereby improving the reliability of the transistor 500. When hydrogen enters the oxygen vacancy in the oxide 530, the defect (hereinafter referred to as V O Sometimes called H ) can act as a donor, generating electrons as carriers. Some of these may bond with oxygen, which bonds with metal atoms, to generate electrons that act as carriers. Therefore, a transistor using an oxide semiconductor containing a large amount of hydrogen has a normally-on In addition, hydrogen in the oxide semiconductor is easily degraded by stress such as heat or an electric field. Because hydrogen is easily mobile, the reliability of transistors deteriorates when a large amount of hydrogen is contained in an oxide semiconductor. In one embodiment of the present invention, V in the oxide 530O Reduce H as much as possible It is preferable to make it highly pure or substantially highly pure. O H To obtain a sufficiently reduced oxide semiconductor, impurities such as moisture and hydrogen must be removed from the oxide semiconductor. (This may also be referred to as dehydration or dehydrogenation treatment) and supplying oxygen to the oxide semiconductor. It is important to supply oxygen to compensate for the oxygen deficiency (sometimes referred to as oxygen addition treatment). V O The oxide semiconductor in which impurities such as H are sufficiently reduced is used as the channel formation region of the transistor. By using this, stable electrical properties can be imparted.

[0186] As an insulator having an excess oxygen region, specifically, an oxide film in which some oxygen is released by heating is used. It is preferable to use a material that releases oxygen when heated. In the normal desorption spectroscopy (DDS) analysis, The calculated amount of oxygen released is 1.0 x 10 18 atoms / cm 3 More than 1.0x, preferably 10 19 atoms / cm 3 More preferably, 2.0 × 10 19 atoms / cm 3 or more, or 3.0 x 10 20 atoms / cm 3 The oxide film is as described above. The surface temperature of the film during the TDS analysis was 100°C or higher and 700°C or lower, or 10 The temperature is preferably in the range of 0°C or higher and 400°C or lower.

[0187] In addition, the insulator having the excess oxygen region is brought into contact with the oxide 530 and then subjected to heat treatment. One or more of the following may be performed: microwave processing, RF processing, or the like. By doing so, it is possible to remove water or hydrogen from the oxide 530. In 30, a reaction occurs in which the VoH bond is broken, in other words, "V O H→Vo+H This reaction occurs, and some of the hydrogen generated is dehydrogenated. The oxide 530 or the insulator adjacent to the oxide 530 is removed by combining with the element to form H2O. In addition, some of the hydrogen may be gettered to the conductor 542.

[0188] The microwave treatment may be carried out using, for example, an apparatus having a power source for generating high-density plasma, Alternatively, it is preferable to use an apparatus having a power source for applying RF to the substrate side. By using a gas containing oxygen and high density plasma, high density oxygen radicals are generated. By applying RF to the substrate side, the oxide generated by the high-density plasma can be The atomic radicals can be efficiently introduced into the oxide 530 or into the insulator in the vicinity of the oxide 530. The microwave treatment can be carried out at a pressure of 133 Pa or more, preferably 200 Pa or more. The pressure may be a or more, more preferably 400 Pa or more. The gas introduced into the device is, for example, oxygen and argon, and the oxygen flow ratio (O2 / The gas is preferably heated at a concentration of (O2+Ar) of 50% or less, preferably 10% to 30%.

[0189] In addition, during the manufacturing process of the transistor 500, when the surface of the oxide 530 is exposed, The heat treatment is preferably performed at a temperature of, for example, 100° C. or higher and 450° C. or lower. More preferably, the temperature is 350° C. or higher and 400° C. or lower. or an inert gas atmosphere, or an oxidizing gas of 10 ppm or more, 1% or more, or 1 For example, it is preferable to carry out the heat treatment in an oxygen atmosphere. By this, oxygen is supplied to the oxide 530, and oxygen vacancies (V O ) can be reduced. The heat treatment may be carried out under reduced pressure or in an atmosphere of nitrogen gas or inert gas. After heat treatment in an oxidizing gas atmosphere, 10ppm of oxidizing gas was added to compensate for the oxygen that was removed. The oxidation may be carried out in an atmosphere containing 1% or more, 1% or more, or 10% or more of an oxidizing gas. After heat treatment in an atmosphere containing 10 ppm or more, 1% or more, or 10% or more, The heat treatment may be performed in a nitrogen gas or inert gas atmosphere.

[0190] By subjecting the oxide 530 to oxygen addition treatment, oxygen vacancies in the oxide 530 are filled with oxygen. In other words, it promotes the reaction "Vo + O → null" Furthermore, the supplied oxygen reacts with the hydrogen remaining in the oxide 530. This allows the hydrogen to be removed as H2O (dehydration). The hydrogen remaining in 530 recombines with the oxygen vacancy and V O Inhibiting the formation of H This can be done.

[0191] Also, if the insulator 524 has an excess oxygen region, the insulator 522 may be oxygen-resistant (e.g., It has the function of suppressing the diffusion of oxygen (element atoms, oxygen molecules, etc.) (the oxygen mentioned above is less likely to permeate) is preferred.

[0192] The insulator 522 has a function of suppressing the diffusion of oxygen and impurities, and the oxide 530 is effective. The oxygen does not diffuse to the insulator 520 side, which is preferable. This can prevent the insulator 524 and the oxide 530 from reacting with oxygen.

[0193] The insulator 522 may be, for example, aluminum oxide, hafnium oxide, aluminum and hafnium oxide. oxides containing ammonium (hafnium aluminate), tantalum oxide, zirconium oxide, titanium Lead zirconate titanate (PZT), strontium titanate (SrTiO3), or (B Insulators containing so-called high-k materials such as a,Sr)TiO3 (BST) are deposited as single layers or As transistors become smaller and more highly integrated, Thinning the gate insulating film can cause problems such as leakage current. By using high-k materials as insulators that function as a transistor, the physical thickness can be maintained. This makes it possible to reduce the gate potential during start operation.

[0194] In particular, it has the function of suppressing the diffusion of impurities and oxygen (the oxygen is difficult to penetrate) ) Insulators containing oxides of one or both of aluminum and hafnium, which are insulating materials It is recommended to use an insulator containing oxides of either or both aluminum and hafnium. , aluminum oxide, hafnium oxide, oxides containing aluminum and hafnium (hafnium It is preferable to use such a material as the insulator 5. When the insulator 522 is formed, the insulator 522 prevents oxygen from being released from the oxide 530 and prevents the transistor from being formed. It functions as a layer that suppresses the intrusion of impurities such as hydrogen from the periphery of 500 into the oxide 530. .

[0195] Alternatively, for example, aluminum oxide, bismuth oxide, or germanium oxide may be added to these insulators. Niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, Alternatively, zirconium oxide may be added to these insulators, or these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be stacked on the insulator.

[0196] The insulator 520 is preferably thermally stable. For example, silicon oxide and Silicon oxide nitride and silicon oxynitride are suitable because they are thermally stable. By combining the insulator with silicon oxide or silicon oxynitride, thermally stable and It is possible to obtain an insulator 520 having a laminated structure with a high relative dielectric constant.

[0197] 18A and 18B, the second transistor 500 has a three-layer laminated structure. As the gate insulating film, an insulator 520, an insulator 522, and an insulator 524 are illustrated. However, the second gate insulating film may have a single layer, two layers, or a laminated structure of four or more layers. In this case, the laminated structure is not limited to the same material, but may be a laminated structure made of different materials. That's fine too.

[0198] The transistor 500 has an oxide 530 including a channel formation region, which functions as an oxide semiconductor. For example, the oxide 530 may be an In-Mn-Zn oxide. n oxides (element M is aluminum, gallium, yttrium, copper, vanadium, beryllium Smoke, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum Tungsten, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium It is preferable to use a metal oxide such as one or more selected from the following. The In-M-Zn oxide that can be applied as 30 is CAAC-OS (c-axis ali annealed crystalline oxide semiconductor Alternatively, CAC-OS (Cloud-Aligned Compositing System) It is preferable that the material is a tetraoxide semiconductor. C represents an example of a crystal structure, and CAC represents an example of a function or material structure. The material 530 may be an In-Ga oxide or an In-Zn oxide.

[0199] CAC-OS is sometimes called CAC-metal oxide. Or CAC-metal oxide is a material that has the function of conductivity in some parts and the function of The CA has insulating properties in some areas, and the entire material has semiconductor properties. C-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the conductive function is a function of allowing electrons (or holes) to flow as carriers, The insulating function is the function of preventing the flow of electrons, which act as carriers. By making these functions work in a complementary manner, the switching function (On / Off This function (which allows the CAC-OS or CAC-metal oxide to In CAC-OS or CAC-metal oxide, each function can be By separating them, the functions of both can be maximized.

[0200] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region are formed at the nanoparticle level in the material. The conductive and insulating regions may be separated by a thin film. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. This may be the case.

[0201] In addition, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be dispersed in the material:

[0202] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxidized de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In this configuration, when carriers flow, In the narrow gap component, carriers mainly flow. The component having a wide gap acts complementary to the component having a narrow gap. Carriers also flow into the wide-gap component in conjunction with the component with a wide gap. AC-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the transistor has a high current driving force in the on state, i.e., a large on-current. Furthermore, high field-effect mobility can be obtained.

[0203] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a matrix composite.

[0204] Note that metal oxides that function as oxide semiconductors include single-crystal oxide semiconductors and other non-crystalline oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAA C-OS, polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide de semiconductor), pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), and non crystalline oxide semiconductors.

[0205] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure has distortion. The distortion is the area where multiple nanocrystals are connected. In the region, the lattice arrangement is changed between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement. Indicates the point where the direction is changing.

[0206] Nanocrystals are basically hexagonal, but they are not limited to regular hexagonal shapes and may be non-regular hexagonal. The distortion may also have lattice arrangements such as pentagons and heptagons. In CAAC-OS, clear grain boundaries (grain boundaries) are observed even near the strain. It is difficult to confirm the crystal structure due to the distortion of the lattice arrangement. This is because the CAAC-OS is aligned in the ab-plane direction. In this case, the arrangement of oxygen atoms is not dense, and the bond distance between atoms is reduced by the substitution of metal elements. This is because distortion can be tolerated by changing the

[0207] In addition, the CAAC-OS has a layer containing indium and oxygen (hereinafter referred to as an In layer) and an element A layered crystal structure in which layers containing M, zinc, and oxygen (hereinafter referred to as (M, Zn) layers) are stacked. It is noted that indium and element M tend to have a layered structure. It is possible, and when the element M in the (M,Zn) layer is replaced with indium, (In,M,Zn) Also, when indium in the In layer is replaced with element M, (In,M ) layer.

[0208] CAAC-OS is a metal oxide with high crystallinity. Since it is difficult to identify grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides can be reduced by the incorporation of impurities or the generation of defects. Therefore, CAAC-OS is a metal oxide with few impurities and defects (such as oxygen vacancies). Therefore, the physical properties of the metal oxide having the CAAC-OS are stable. Therefore, metal oxides having CAAC-OS are heat-resistant and highly reliable.

[0209] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range (nm or less). There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be distinguished from a-like OS or amorphous oxide semiconductor. It may be difficult to distinguish between the two.

[0210] In addition, In-G, a type of metal oxide containing indium, gallium, and zinc, a-Zn oxide (also known as "IGZO") has a stable structure when made into the above-mentioned nanocrystals. In particular, IGZO tends to have difficulty growing crystals in the atmosphere, so Small crystals (e.g., crystals of several mm or several cm) are more difficult to measure than large crystals (here, crystals of several mm or several cm). In some cases, the nanocrystals mentioned above may be structurally more stable.

[0211] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and the amorphous oxide semiconductor. A-like OS has voids or low density areas. e-OS has lower crystallinity than nc-OS and CAAC-OS.

[0212] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-lik The crystalline structure may have two or more of e-OS, nc-OS, and CAAC-OS.

[0213] In addition, it is preferable to use a metal oxide with a low carrier concentration for the transistor 500. When the carrier concentration of the metal oxide is reduced, the impurity concentration in the metal oxide is reduced. In this specification and the like, the impurity concentration is low and the defect level density is low. The low level density is called high purity intrinsic or substantially high purity intrinsic. Impurities include, for example, hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, and nickel. , silicon, etc.

[0214] In particular, hydrogen contained in metal oxides reacts with oxygen that bonds with metal atoms to form water, Oxygen vacancies may be formed in the metal oxide. If defects are present, the transistor may have normally-on characteristics. The defect where hydrogen has entered the oxygen vacancy acts as a donor, and electrons, which act as carriers, are generated. In addition, some of the hydrogen atoms bond with oxygen atoms that bond with metal atoms, and the electrons that are carriers Therefore, transistors using metal oxides containing a large amount of hydrogen The capacitor tends to have normally-on characteristics.

[0215] The defect where hydrogen has entered the oxygen vacancy can function as a donor for the metal oxide. It is difficult to quantitatively evaluate the defects. Therefore, in this specification, the metal oxide As a parameter of the oxide, the capacitance of the capacitor, which is assumed to be in a state where no electric field is applied, is used instead of the donor concentration. In other words, the "carrier concentration" described in this specification and the like is the "donor concentration." This can sometimes be rephrased as "concentration."

[0216] Therefore, when a metal oxide is used as the oxide 530, the hydrogen in the metal oxide is reduced as much as possible. Specifically, it is preferable that metal oxides are analyzed by secondary ion mass spectrometry ( SIMS (Secondary Ion Mass Spectrometry) The resulting hydrogen concentration is 1×10 20 atoms / cm 3 Less than 1 x 10 19 a toms / cm 3 less than 5 × 1018 atoms / cm 3 Less than or even better Preferably 1 x 10 18 atoms / cm 3 Impurities such as hydrogen are sufficiently reduced. By using this metal oxide in the channel formation region of a transistor, stable electrical characteristics can be achieved. It can be granted.

[0217] In addition, when a metal oxide is used for the oxide 530, the carrier of the metal oxide in the channel formation region The concentration of α is 1×10 18 cm -3 Preferably, it is 1×10 or less. 17 cm -3 less than More preferably, it is 1×10 16 cm -3 More preferably, it is less than 1 x10 13 cm -3 More preferably, it is less than 1×10 12 cm -3 is less than It is more preferable that the lower limit of the carrier concentration of the metal oxide in the channel formation region is There is no particular limitation, but for example, 1 × 10 -9 cm -3 It can be said that:

[0218] When a metal oxide is used for the oxide 530, the conductor 542 (the conductor 542a and When the conductor 542b) comes into contact with the oxide 530, the oxygen in the oxide 530 is transferred to the conductor 54 2, the conductor 542 may be oxidized. It is highly likely that the conductivity of the conductor 542 will decrease. The diffusion of oxygen into the oxide 530 can be expressed as the absorption of oxygen by the conductor 542. can be done.

[0219] Furthermore, oxygen in the oxide 530 is converted into conductors 542 (conductors 542a and 542b). Diffusion into the oxide 530b and the conductor 542a. A foreign layer may be formed between the oxide 530b and the conductor 542. Since the hetero layer contains a large amount of oxygen, it is presumed that the hetero layer has insulating properties. The three-layer structure of the oxide 530b and the different layer is a three-layer structure consisting of a metal, an insulator, and a semiconductor. It can be considered as a MIS (Metal-Insulator-Semiconductor) This is sometimes called a diode junction configuration, or a MIS configuration. do.

[0220] The different layer is not limited to being formed between the conductor 542 and the oxide 530b. For example, a different layer may be formed between the conductor 542 and the oxide 530c, or between the conductor 54 2 and oxide 530b, and between conductor 542 and oxide 530c. There is a match.

[0221] In addition, the metal oxide that functions as a channel formation region in the oxide 530 is a band gap metal oxide. It is preferable to use a material with a gap of 2 eV or more, preferably 2.5 eV or more. By using metal oxides with a wide band gap, the off-state current of transistors can be reduced. It is possible.

[0222] The oxide 530 has the oxide 530a under the oxide 530b, so that the oxide 530 is thicker than the oxide 530a. This can suppress the diffusion of impurities from the underlying structure into the oxide 530b. In addition, by having the oxide 530c on the oxide 530b, the oxide 530c can be formed more efficiently than the oxide 530c. It is possible to suppress the diffusion of impurities from the structure formed above into the oxide 530b. .

[0223] The oxide 530 has a laminated structure of a plurality of oxide layers each having a different atomic ratio of each metal atom. Specifically, in the metal oxide used for the oxide 530a, the constituent elements are preferably The atomic ratio of element M in the oxide 530b is It is preferable that the atomic ratio of the metal oxide used for the oxide 530a is larger than that of the element M. In the oxide 530b, the atomic ratio of the element M to In is It is preferable that the atomic ratio of element M to In is larger than that of element M. In the metal oxide used, the atomic ratio of In to the element M is It is preferable that the atomic ratio of In to the element M in the metal oxide is larger than that of In. Oxide 530c is a metal oxide that can be used for oxide 530a or oxide 530b. Things can be used.

[0224] The energy of the conduction band minimum of the oxide 530a and the oxide 530c is It is preferable that the energy of the oxide is higher than the energy of the bottom of the conduction band of oxide b. The electron affinity of 530a and oxide 530c is smaller than the electron affinity of oxide 530b. It is preferable.

[0225] Here, at the junctions of oxide 530a, oxide 530b, and oxide 530c, The energy level of the lower conduction band edge changes gradually. The energy level of the conduction band minimum at the junction of 530b and oxide 530c is continuous. In order to achieve this, the oxide 5 At the interface between oxide 530a and oxide 530b, and at the interface between oxide 530b and oxide 530c This is advantageous in that the defect level density of the mixed layer formed by this method is reduced.

[0226] Specifically, oxide 530a and oxide 530b, and oxide 530b and oxide 530c are oxides. By having a common element other than the element (as the main component), a mixed layer with low defect level density is formed. For example, if the oxide 530b is an In-Ga-Zn oxide, the oxide 530b may be an In-Ga-Zn oxide. 30a and oxide 530c, In-Ga-Zn oxide, Ga-Zn oxide, oxide Gallium or the like may be used.

[0227] At this time, the main path of the carriers is the oxide 530b. By configuring the oxide 530c as described above, the interface between the oxide 530a and the oxide 530b and the oxide The defect state density at the interface between the substrate 530b and the oxide 530c can be reduced. Therefore, the influence of interface scattering on carrier conduction is reduced, and the transistor 500 has a high On-current can be obtained.

[0228] On the oxide 530b, a conductor 542a is formed, which functions as a source electrode and a drain electrode. The conductor 542a and the conductor 542b are provided as follows: , aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum , tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconia Sodium, beryllium, indium, ruthenium, iridium, strontium, lanthanum or an alloy containing the above metal elements, or It is preferable to use a combination of alloys, for example, tantalum nitride, titanium nitride, tantalum titanium and aluminum nitrides, tantalum and aluminum nitrides, Ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum It is preferable to use oxides containing nickel. , nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide Ruthenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel Oxides containing oxygen are conductive materials that are resistant to oxidation or that maintain conductivity even after absorbing oxygen. Furthermore, metal nitride films such as tantalum nitride are preferable because they can be easily etched by hydrogen or oxygen. It is preferable because it has a barrier property against elements.

[0229] In addition, although the conductor 542a and the conductor 542b are shown as having a single layer structure in FIG. A laminated structure of two or more layers may be used. For example, a tantalum nitride film and a tungsten film may be laminated. Alternatively, a titanium film and an aluminum film may be stacked. Two-layer structure with aluminum film laminated, copper film on copper-magnesium-aluminum alloy film Two-layer structure with copper film laminated on titanium film, two-layer structure with copper film laminated on tungsten film It may also have a two-layer structure.

[0230] Also, a titanium film or titanium nitride film and an aluminum film overlaid on the titanium film or titanium nitride film are used. A titanium film or a copper film is laminated, and a titanium film or a titanium nitride film is further formed on the aluminum film or a copper film. Three-layer structure: a molybdenum film or molybdenum nitride film and a molybdenum film or molybdenum nitride film. An aluminum film or copper film is laminated on top of the molybdenum film, and then a molybdenum film or The molybdenum nitride film may be formed as a three-layer structure. A transparent conductive material containing zinc oxide may also be used.

[0231] As shown in FIG. 18A, the oxide 530 and the conductor 542a (conductor 542b) At the interface and its vicinity, a region 543a and a region 543b are formed as low resistance regions. In this case, the region 543a functions as either a source region or a drain region. The region 543b functions as the other of the source region and the drain region. A channel forming region is formed in the region sandwiched between region 543a and region 543b.

[0232] By providing the conductor 542a (conductor 542b) so as to be in contact with the oxide 530, The oxygen concentration in the region 543a (region 543b) may decrease. The metal contained in the conductor 542a (conductor 542b) and the oxide 530 are mixed in the region 543b. In such a case, a metal compound layer containing the metal compound may be formed in the region 543a (region The carrier density in the region 543a (region 543b) increases, and the region 543a (region 543b) becomes a low resistance region. do.

[0233] The insulator 544 is provided to cover the conductor 542a and the conductor 542b. The insulator 544 prevents oxidation of the oxide 542a and the conductor 542b. 530 and may be provided to be in contact with the insulator 524.

[0234] Insulator 544 includes hafnium, aluminum, gallium, yttrium, and zirconium. Aluminum, tungsten, titanium, tantalum, nickel, germanium, neodymium, lanthanum, or a metal oxide containing one or more selected from magnesium, etc. The insulator 544 may be made of silicon nitride oxide, silicon nitride, or the like. can also be used.

[0235] In particular, the insulator 544 may be an oxide of aluminum or hafnium, or both. Insulators containing aluminum oxide, hafnium oxide, aluminum, and hafnium It is preferable to use oxides containing hafnium (hafnium aluminate). Hafnium aluminate has higher heat resistance than hafnium oxide. This is preferable because it is difficult to crystallize during the heat treatment. 542b is a material that is oxidation-resistant, or the conductivity does not decrease significantly even when it absorbs oxygen. In this case, the insulator 544 is not an essential component. Just do that.

[0236] By providing the insulator 544, impurities such as water and hydrogen contained in the insulator 580 are converted into acids. The oxide 530c is prevented from diffusing into the oxide 530b through the insulator 545. In addition, the excess oxygen contained in the insulator 580 can prevent the conductor 560 from being oxidized. It is possible.

[0237] The insulator 545 functions as a first gate insulating film. It is preferable that the insulator 545 is disposed in contact with the inside (top and side surfaces) of the Similar to the insulator 524, an insulator containing excess oxygen and releasing oxygen when heated is used. It is preferable to form it using a

[0238] Specifically, silicon oxide having excess oxygen, silicon oxynitride, silicon nitride oxide, and nitride silicon dioxide, fluorine-doped silicon dioxide, carbon-doped silicon dioxide, carbon, and Silicon oxide doped with nitrogen and silicon oxide having vacancies can be used. Silicon oxide and silicon oxynitride are preferred because they are stable to heat.

[0239] An insulator that releases oxygen when heated is used as an insulator 545 and is attached to the top surface of the oxide 530c. By providing the oxide 530b as the insulating layer, the insulating layer 545 can be electrically connected to the oxide 530b through the oxide 530c. Oxygen can be effectively supplied to the channel formation region. Preferably, the concentration of impurities such as water or hydrogen in the insulator 545 is reduced. The thickness of the insulator 545 is preferably 1 nm or more and 20 nm or less.

[0240] In addition, in order to efficiently supply excess oxygen contained in the insulator 545 to the oxide 530, A metal oxide may be provided between the body 545 and the conductor 560. The metal oxide may be an insulator. It is preferable to suppress the diffusion of oxygen from 545 to the conductor 560. The metal oxide prevents excess oxygen from diffusing from the insulator 545 to the conductor 560. In other words, it is possible to suppress a decrease in the amount of excess oxygen supplied to the oxide 530. This can prevent the conductor 560 from being oxidized by excess oxygen. Any material that can be used for the insulator 544 may be used.

[0241] Note that the insulator 545 may have a stacked structure similar to the second gate insulating film. As the miniaturization and high integration of devices progresses, the gate insulating film becomes thinner, which reduces leakage current and other issues. Therefore, the insulator that functions as the gate insulating film is made of high-k material. By using a laminated structure of a material that is thermally stable and a material that is thermally stable, the thickness of the material is maintained while the It is possible to reduce the gate potential during transistor operation. It may have a laminated structure.

[0242] The conductor 560 functioning as the first gate electrode has a two-layer structure in FIGS. 18A and 18B. However, it may have a single layer structure or a laminated structure of three or more layers.

[0243] The conductor 560a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, a nitrogen oxide molecule ( Conductive material with the function of suppressing the diffusion of impurities such as N2O, NO, NO2, etc., copper atoms, etc. It is preferable to use a material containing at least oxygen (for example, oxygen atoms, oxygen molecules, etc.). It is preferable to use a conductive material that has the function of suppressing the diffusion of the conductor 56. Oa has the function of suppressing oxygen diffusion, so the oxygen contained in the insulator 545 This can prevent the conductor 560b from being oxidized and the conductivity from decreasing. Examples of conductive materials that have the function of suppressing this include tantalum, tantalum nitride, and ruthenium. It is preferable to use ruthenium or ruthenium oxide as the conductor 560a. In this case, an oxide semiconductor that can be used for the oxide 530 can be used. By forming a film of conductor 560b by sputtering, the electrical resistance value of conductor 560a is reduced. This is called an OC (Oxide Conductor) electrode. This can be done.

[0244] The conductor 560b is a conductive material mainly composed of tungsten, copper, or aluminum. In addition, since the conductor 560b also functions as a wiring, It is preferable to use a highly conductive material, such as tungsten, copper, or aluminum. The conductor 560b can be made of a conductive material containing silicon as a main component. For example, a laminated structure of titanium or titanium nitride and the above conductive material may be used. good.

[0245] The insulator 580 is provided on the conductor 542a and the conductor 542b via the insulator 544. Preferably, the insulator 580 has an excess oxygen region. For example, the insulator 58 0, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, fluorine silicon oxide doped with carbon, silicon oxide doped with carbon, and acid doped with nitrogen. It is particularly preferable that the insulating layer 100 has a silicon oxide, a silicon oxide having pores, or a resin. Silicon oxide and silicon oxynitride are preferred because they are thermally stable. Silicon oxide and silicon oxide with vacancies easily form excess oxygen regions in later processes. This is preferable because it is possible to

[0246] The insulator 580 preferably has an excess oxygen region. By providing the insulator 580 in contact with the oxide 530c, the oxygen in the insulator 580 is converted into the oxide 530c, the oxide 530 can be efficiently supplied. It is preferable that the concentration of impurities such as water or hydrogen in the oxygen-containing gas is reduced.

[0247] The opening in the insulator 580 is formed to overlap the region between the conductor 542a and the conductor 542b. As a result, the conductor 560 is inserted through the opening in the insulator 580 and the conductor 542a and the conductor 542b. It is formed so as to be embedded in the region sandwiched between 542b.

[0248] In miniaturizing semiconductor devices, it is required to shorten the gate length. Therefore, the thickness of the conductor 560 must be increased. As a result, the conductor 560 can have a shape with a high aspect ratio. In order to embed the conductor 560 in the opening of the insulator 580, the conductor 560 is formed to have an aspect ratio Even if the shape is high, the conductor 560 can be formed without collapsing during the process. do.

[0249] The insulator 574 is connected to the top surface of the insulator 580, the top surface of the conductor 560, and the top surface of the insulator 545. The insulator 574 is preferably provided in contact with the , insulator 545, and insulator 580. From this excess oxygen region, oxygen can be supplied into the oxide 530 .

[0250] For example, the insulator 574 may be hafnium, aluminum, gallium, yttrium, or di zinc, tungsten, titanium, tantalum, nickel, germanium, or magnesium Metal oxides containing one or more metals selected from the group consisting of sodium, do.

[0251] In particular, aluminum oxide has a high barrier property and is a thin film of 0.5 nm to 3.0 nm. Therefore, the diffusion of hydrogen and nitrogen can be suppressed even if the sputtering method is used. The aluminum oxide film formed by this method is both an oxygen source and a barrier to impurities such as hydrogen. It can also function as a membrane.

[0252] In addition, it is preferable to provide an insulator 581 that functions as an interlayer film over the insulator 574. The insulator 581, like the insulator 524, has a low impurity concentration such as water or hydrogen. It is preferably reduced.

[0253] Also, openings formed in the insulators 581, 574, 580, and 544 Conductor 540a and conductor 540b are placed in the mouth. The conductors 540a and 540b are provided opposite each other with the conductor 560 in between. b has the same configuration as conductor 546 and conductor 548 described later.

[0254] An insulator 582 is provided on the insulator 581. The insulator 582 is resistant to oxygen and hydrogen. Therefore, the insulator 582 is preferably made of an insulating material having a barrier property. The insulator 582 may be made of a material similar to that of the insulator 514. For example, the insulator 582 may be made of aluminum oxide. It is preferable to use metal oxides such as tantalum oxide, hafnium oxide, and the like.

[0255] In particular, aluminum oxide is a material that can absorb oxygen and hydrogen, which can cause fluctuations in the electrical characteristics of transistors. Therefore, it has a high blocking effect that prevents impurities such as acid and moisture from passing through the membrane. Aluminum oxide is resistant to hydrogen, moisture, etc. during and after the transistor manufacturing process. It is possible to prevent impurities from being mixed into the transistor 500. This can suppress the release of oxygen from the oxide that makes up the transistor. Suitable for use as a protective film against 500.

[0256] In addition, an insulator 586 is provided on the insulator 582. The insulator 586 is 20 can be used. In addition, these insulators have a relatively low dielectric constant. By applying the material, it is possible to reduce the parasitic capacitance that occurs between wiring. For example, The body 586 can be a silicon oxide film, a silicon oxynitride film, or the like.

[0257] Also, the insulator 520, the insulator 522, the insulator 524, the insulator 544, the insulator 580, the insulator The body 574, the insulator 581, the insulator 582, and the insulator 586 are provided with the conductor 546 and and a conductor 548 and the like are embedded therein.

[0258] The conductor 546 and the conductor 548 are connected to the capacitor 600, the transistor 500, or the transistor The conductor 546 and the resistor 550 function as plugs or wirings. The conductor 548 may be formed using the same material as the conductor 328 and the conductor 330. can be done.

[0259] After the transistor 500 is formed, an opening is formed to surround the transistor 500. An insulator having high barrier properties against hydrogen or water may be formed so as to cover the opening. By encasing the transistor 500 in the insulator with high barrier properties, moisture and It is possible to prevent the intrusion of hydrogen and oxygen. Alternatively, the transistor may be wrapped in an insulator that has a high barrier property against hydrogen or water. When forming an opening to surround the transistor 500, for example, the insulator 522 or the insulator 5 14, and the burr 522 or 514 is in contact with the insulator 522 or 514. If a highly insulating material is formed, it can be used as part of the manufacturing process of the transistor 500. In addition, examples of insulators with high barrier properties against hydrogen or water include: A material similar to that of the insulator 522 or the insulator 514 may be used.

[0260] Next, a capacitor 600 is provided above the transistor 500. The capacitor 600 has the following characteristics: It has a conductor 610, a conductor 620, and an insulator 630.

[0261] Moreover, a conductor 612 may be provided on the conductor 546 and the conductor 548. 12 has a function as a plug or wiring that connects to the transistor 500. The conductive body 610 functions as an electrode of the capacitor 600. The body 610 can be formed simultaneously.

[0262] The conductor 612 and the conductor 610 may be made of molybdenum, titanium, tantalum, or tungsten. a metal film containing an element selected from aluminum, copper, chromium, neodymium, and scandium; Or a metal nitride film containing the above-mentioned elements (tantalum nitride film, titanium nitride film, molybdenum nitride film, etc.) Indium tin oxide (ITO) or tungsten nitride (Tungsten nitride) can be used. Indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide oxide, indium oxide with titanium oxide, indium tin oxide with titanium oxide, Conductive materials such as indium zinc oxide and indium tin oxide with added silicon oxide are used You can also do this.

[0263] In this embodiment, the conductor 612 and the conductor 610 are shown as having a single-layer structure. For example, a conductive material having a barrier property and a conductive material having a barrier property may be laminated. Conductors with barrier properties are placed between the highly conductive conductors and those with high conductivity. A highly adhesive conductor may be formed.

[0264] The conductor 620 is provided so as to overlap with the conductor 610 with the insulator 630 interposed therebetween. The conductor 620 is made of a conductive material such as a metal material, an alloy material, or a metal oxide material. High-melting-point materials such as tungsten and molybdenum, which have both heat resistance and electrical conductivity, are used. It is preferable to use tungsten, and it is particularly preferable to use tungsten. When forming the layer simultaneously with other components, low-resistance metal materials such as Cu (copper) and Al (aluminum) are used. It is best to use a

[0265] An insulator 640 is provided on the conductor 620 and the insulator 630. The insulator 640 can be formed using a material similar to that of the insulator 320. It may also function as a planarizing film that covers the underlying unevenness.

[0266] By using this structure, a semiconductor device including a transistor having an oxide semiconductor This allows for miniaturization or high integration.

[0267] Examples of a substrate that can be used for a semiconductor device of one embodiment of the present invention include a glass substrate and a quartz substrate. , sapphire substrate, ceramic substrate, metal substrate (e.g., stainless steel substrate, Substrate with steel foil, tungsten substrate, tungsten foil semiconductor substrates (e.g., single crystal semiconductor substrates, polycrystalline semiconductor substrates, or compound semiconductor substrates), SOI (Silicon on Insulator) substrate In addition, a material having heat resistance capable of withstanding the processing temperature of this embodiment can be used. A plastic substrate may also be used. An example of a glass substrate is barium borosilicate glass. Glass, aluminosilicate glass, or aluminoborosilicate glass, or soda lime Glass, etc. Alternatively, crystallized glass, etc. can be used.

[0268] Alternatively, the substrate may be a flexible substrate, a laminated film, a paper containing a fibrous material, or A flexible substrate, a laminated film, a base film, etc. can be used. Examples of such materials include polyethylene terephthalate. (PET), polyethylene naphthalate (PEN), polyethersulfone (PES) , and plastics such as polytetrafluoroethylene (PTFE). An example is a synthetic resin such as acrylic. Another example is polypropylene. Examples include polyethylene, polyester, polyvinyl fluoride, or polyvinyl chloride. Examples include polyamide, polyimide, aramid, epoxy, inorganic vapor deposition film, and paper. In particular, transistors are manufactured using semiconductor substrates, single crystal substrates, or SOI substrates. By manufacturing the capacitors, there is little variation in characteristics, size, or shape, and the current It is possible to manufacture transistors with high performance and small size. By configuring a circuit using a MOS transistor, it is possible to reduce the power consumption of the circuit or to increase the integration density of the circuit. can be done.

[0269] In addition, a flexible substrate is used as the substrate, and transistors, resistors, and Alternatively, a substrate and a transistor, a resistor, and / or a capacitor may be formed. Alternatively, a release layer may be provided between the capacitors and the like. Or, after the whole process is completed, it can be separated from the substrate and used for transferring to another substrate. In this case, transistors, resistors, and / or capacitors are mounted on substrates with poor heat resistance or flexible substrates. The above-mentioned peeling layer may be formed of, for example, a tungsten film and a silicon oxide film. A laminated structure of an inorganic film and a substrate, or a structure in which an organic resin film such as polyimide is formed on a substrate Alternatively, a silicon film containing hydrogen or the like can be used.

[0270] In other words, even if a semiconductor device is formed on a certain substrate and then transferred to another substrate, An example of a substrate onto which a semiconductor device is transferred is a substrate on which the above-described transistor is formed. In addition to the substrates that can be used, paper substrates, cellophane substrates, aramid film substrates, polyimide film substrates, Film substrate, stone substrate, wood substrate, fabric substrate (natural fibers (silk, cotton, linen), synthetic fibers (nylon) Polyurethane, polyester) or regenerated fiber (acetate, cupra, rayon , recycled polyester), leather substrates, or rubber substrates. By using the plate, it is possible to manufacture flexible semiconductor devices and to manufacture semiconductor devices that are not easily broken. It is possible to provide heat resistance, reduce weight, or reduce thickness.

[0271] By providing a semiconductor device on a flexible substrate, for example, the secondary battery 300 can be formed in a curved shape. Even if the secondary battery has a curved shape, the semiconductor device can be provided along the outer shape of the secondary battery. For example, when the secondary battery 300 has a cylindrical shape, a semi-conductor may be provided on the side surface of the secondary battery. The conductor arrangement may be provided in a winding manner.

[0272] <Transistor variation 1> The transistor 500A shown in FIGS. 19A and 19B is the same as the transistor having the configuration shown in FIGS. 18A and 18B. 19A shows a modified example of the transistor 500A in the channel length direction. 19B is a cross-sectional view of the transistor 500A in the channel width direction. 19A and 19B are semiconductor devices according to one embodiment of the present invention, such as a transistor 550. The present invention can also be applied to other transistors included in the device.

[0273] The transistor 500A having the configuration shown in FIGS. 19A and 19B has an insulator 552, an insulator 513, and an insulator 513. and the insulator 404, and the oxide 530c is a product of the oxide 530c1 and the oxide 530c2. The transistor 500 shown in FIGS. 18A and 18B is different from the transistor 500 shown in FIGS. 18A and 18B in that it is configured with layers. An insulator 552 is provided in contact with the side surface of the conductor 540a, and an insulator 552 is provided in contact with the side surface of the conductor 540b. The insulator 552 is provided in contact with the transistor shown in FIGS. 18A and 18B. 18A and 18B in that it does not have the insulator 520. This is different from transistor 500.

[0274] The transistor 500 having the configuration shown in FIGS. 19A and 19B has an insulator 513 on an insulator 512. In addition, the insulator 404 is provided on the insulator 574 and the insulator 513. do.

[0275] In the transistor 500 having the configuration shown in FIGS. 19A and 19B, the insulators 514 and 516 , insulator 522, insulator 524, insulator 544, insulator 580, and insulator 574 are The insulating material 404 covers the insulating material. 404 is the top surface of the insulator 574, the side surface of the insulator 574, the side surface of the insulator 580, the insulator 54 4 side, insulator 524 side, insulator 522 side, insulator 516 side, insulator 51 4 and the top surface of the insulator 513. It is isolated from the outside by the body 404 and the insulator 513 .

[0276] The insulator 513 and the insulator 404 are formed of at least hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). It is preferable that the insulator 513 has a high function of suppressing the diffusion of water molecules. The insulator 404 is made of a material having a high hydrogen barrier property, such as silicon nitride or oxynitride. It is preferable to use silicon dioxide, which prevents hydrogen and the like from diffusing into the oxide 530. Therefore, the deterioration of the characteristics of the transistor 500A can be suppressed. The reliability of the semiconductor device according to one embodiment of the present invention can be improved.

[0277] Insulator 552 includes insulator 581, insulator 404, insulator 574, insulator 580, and insulator 574. The insulator 552 is provided in contact with the insulator 544. The insulator 552 has a function of suppressing the diffusion of hydrogen or water molecules. For example, the insulator 552 is preferably made of a material with high hydrogen barrier properties. Insulators such as silicon nitride, aluminum oxide, or silicon nitride oxide may be used. In particular, silicon nitride is a material with high hydrogen barrier properties, so the insulator 552 It is preferable to use a material with high hydrogen barrier properties as the insulator 552. As a result, impurities such as water or hydrogen are transported from the insulator 580 to the conductor 540a and the conductor 540b. 0b, the diffusion into the oxide 530 can be suppressed. and suppressing absorption of oxygen contained in the conductive material 540a and the conductive material 540b by the conductive material 540a and the conductive material 540b. As described above, the reliability of the semiconductor device of one embodiment of the present invention can be improved.

[0278] The oxide 530c1 is formed on the top surface of the insulator 524, the side surface of the oxide 530a, and the top surface of the oxide 530b. the surface and side, the side of the conductor 542a and the conductor 542b, the side of the insulator 544, and The oxide 530c2 contacts the side of the insulator 545 (see FIG. 19B). and come into contact with them.

[0279] The oxide 530c1 may be, for example, an In-Zn oxide. The material 530c2 is a material used for the oxide 530c when the oxide 530c has a single layer structure. For example, the oxide 530c2 may be made of In:Ga :Zn=1:3:4 [atomic ratio], Ga:Zn=2:1 [atomic ratio], or Ga:Zn A metal oxide having an atomic ratio of 2:5 can be used.

[0280] By forming the oxide 530c into a two-layer structure of the oxide 530c1 and the oxide 530c2, In this case, the on-state current of the transistor can be increased compared to the case where the oxide 530c has a single-layer structure. Therefore, the transistor can be, for example, a power MOS transistor.

[0281] <Transistor variation 2> A configuration example of the transistor 500B will be described with reference to FIGS. 20A, 20B, and 20C. FIG. 20A is a top view of transistor 500B. FIG. 20B shows the transistor 500B shown in FIG. 20A with a dashed line. 20A is a cross-sectional view of the L1-L2 region shown in FIG. 20A is a cross-sectional view of the part. Note that in the top view of FIG. 20A, the markings of some elements are omitted for clarity. The information is omitted.

[0282] Transistor 500B is a modification of transistor 500. Therefore, to avoid repetition, we will mainly focus on transistors. We will explain the differences from the 500.

[0283] The conductor 560 functioning as the first gate electrode is made up of the conductor 560a and the conductor 560b. The conductor 560a is composed of hydrogen atoms, hydrogen molecules, water molecules, copper atoms, and the like. It is preferable to use a conductive material that has the function of suppressing the diffusion of impurities such as electrons. has a function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.). It is preferable to use a conductive material that can

[0284] Since the conductor 560a has the function of suppressing the diffusion of oxygen, the material selection of the conductor 560b is easy. In other words, the presence of the conductor 560a allows the conductor 560b to This suppresses oxidation of the material, thereby preventing a decrease in electrical conductivity.

[0285] In addition, the top and side surfaces of the conductor 560, the side surface of the insulator 545, and the side surface of the oxide 530c It is preferable to provide an insulator 544 so as to cover the surface. It is recommended to use an insulating material that has the function of suppressing the diffusion of impurities such as hydrogen and oxygen. For example, it is preferable to use aluminum oxide or hafnium oxide. Other examples include magnesium oxide, gallium oxide, germanium oxide, and yttria oxide. Metal oxides such as ammonium, zirconium oxide, lanthanum oxide, neodymium oxide or tantalum oxide Silicon oxide, silicon nitride, silicon oxide, silicon nitride, or the like can be used.

[0286] By providing the insulator 544, oxidation of the conductor 560 can be suppressed. By having the insulator 544, impurities such as water and hydrogen contained in the insulator 580 can be prevented from This can prevent the light from diffusing to the star 500B.

[0287] Transistor 500B has a conductor 560 connected to a portion of conductor 542a and a portion of conductor 542b. Therefore, the parasitic capacitance is likely to be larger than that of the transistor 500. However, the operating frequency tends to be lower than that of the insulator 580. Since there is no need to provide an opening in the substrate and fill in the conductor 560 or the insulator 545, Higher productivity compared to Transistor 500.

[0288] This embodiment mode may be implemented by appropriately combining with the configurations described in other embodiment modes and examples. It is possible to implement this.

[0289] (Embodiment 5) In this embodiment, a configuration example of a battery that can be used as the secondary battery 300 will be explained with reference to the drawings. In this embodiment, an example of a lithium ion secondary battery is shown, but the secondary battery 30 The battery that can be used for the battery is not limited to a lithium ion secondary battery.

[0290] [Cylindrical secondary battery] 21A is an external view of a cylindrical secondary battery 715. FIG. 21B is an external view of a cylindrical secondary battery The figure shows a cross section of the hollow cylindrical battery can 702. A battery element is provided in which a positive electrode 704 and a negative electrode 706 are wound with a separator 705 sandwiched therebetween. Although not shown, the battery element is wound around a center pin. The battery can 702 has one end closed and the other end open. Nickel, aluminum, titanium, and other metals containing nickel, aluminum, titanium, or alloys of these metals and other metals An alloy with metal (for example, stainless steel) can be used. To prevent this, it is preferable to coat the battery can 702 with nickel, aluminum, or the like. In the battery element, a positive electrode, a negative electrode, and a separator are wound together, and a pair of opposing insulating plates are 708 and an insulating plate 709. The battery can 702 in which the battery element is provided is The interior is filled with a non-aqueous electrolyte (not shown). The positive electrode contains active materials such as lithium iron phosphate (LiCoO2) and lithium iron phosphate (LiFePO4), and the negative electrode contains lithium The negative electrode is made of a carbon material such as graphite that can absorb and release ammonium ions, and the negative electrode is made of ethylene carbonate. Lithium salts such as LiBF4 and LiPF6 are dissolved in organic solvents such as ethanol and diethyl carbonate. The electrolyte is composed of a non-aqueous electrolyte solution in which an electrolyte such as the above is dissolved.

[0291] The positive and negative electrodes used in cylindrical secondary batteries are wound, so active materials are formed on both sides of the current collector. A positive electrode terminal (positive electrode current collecting lead) 703 is connected to the positive electrode 704. A negative electrode terminal (negative electrode current collecting lead) 707 is connected to the negative electrode 706. The negative electrode terminal 707 can be made of a metal material such as aluminum. 703 is resistance-welded to a safety valve mechanism 712, and a negative terminal 707 is resistance-welded to the bottom of the battery can 702. The safety valve mechanism 712 is a PTC (Positive Temperature Coefficient) element. The positive electrode cap 701 is electrically connected to the positive electrode cap 701 via a coefficient 711. The safety valve mechanism 712 closes the positive electrode cap 70 when the internal pressure of the battery exceeds a predetermined threshold. The PTC element 711 cuts off the electrical connection between the positive electrode 704 and the PTC element 711. It is a thermal resistor whose resistance increases when the temperature rises, and the increase in resistance limits the amount of current and prevents abnormalities. It prevents heat buildup. The PTC element contains a barium titanate (BaTiO3) based semiconductor. Conductive ceramics or the like can be used.

[0292] A lithium ion secondary battery using an electrolytic solution comprises a positive electrode, a negative electrode, a separator, an electrolytic solution, and In a lithium-ion secondary battery, the anode (positive electrode) is charged and discharged. The cathode (negative electrode) is switched, and the oxidation reaction and reduction reaction are switched. An electrode with a high reaction potential is called a positive electrode, and an electrode with a low reaction potential is called a negative electrode. In the specification, even if a reverse bias is applied during charging or discharging, Even when a charging current flows through the positive electrode, the positive electrode is called the "positive electrode" or "+ electrode (plus electrode)." The negative electrode is called the "negative electrode" or "-electrode (minus electrode)." Oxidation and reduction reactions The terms anode and cathode, which are related to the Therefore, the anode and The term cathode (negative electrode) will not be used in this specification. When using the terms anode and cathode, specify whether they are used during charging or discharging. It will also be indicated whether it corresponds to a positive electrode (plus electrode) or a negative electrode (minus electrode). .

[0293] In this embodiment, an example of a lithium ion secondary battery is shown, but the present invention is not limited to lithium ion secondary batteries. For example, a material having element A, element X, and oxygen may be used as a positive electrode material for a secondary battery. The element A is one or more selected from the group 1 elements and the group 2 elements. As the element of Group 1, for example, lithium, sodium, potassium, etc. The elements of Group 2 include, for example, calcium and beryllium. The element X may be, for example, a metal element, silicon, or magnesium. and phosphorus. The element X can be cobalt, nickel, or the like. , manganese, iron, and vanadium. , lithium cobalt composite oxide (LiCoO2) and lithium iron phosphate (LiFePO4 ) are mentioned.

[0294] The negative electrode has a negative electrode active material layer and a negative electrode current collector. The negative electrode active material layer contains a conductive additive and and a binder.

[0295] As a negative electrode active material, it is possible to carry out charge-discharge reactions by alloying and dealloying reactions with lithium. Any suitable element can be used, such as silicon, tin, gallium, aluminum, Rumanium, lead, antimony, bismuth, silver, zinc, cadmium, indium, etc. Materials containing at least one of these elements can be used. These elements have a large capacity compared to carbon. Silicon in particular has a high theoretical capacity of 4700mAh / g.

[0296] The secondary battery preferably has a separator. Examples of the separator include: Cellulose-containing fibers such as paper, nonwoven fabrics, glass fibers, ceramics, or Nylon (polyamide), Vinylon (polyvinyl alcohol fiber), polyester, It is recommended to use synthetic fibers such as acrylic, polyolefin, and polyurethane. This can be done.

[0297] In FIG. 21C, a power receiving device 724 formed on or fixed to a flexible substrate 721 is connected to a secondary battery The figure shows a state in which the power receiving device 724 is provided along the side of the power receiving device 715. The power receiving device 724 may be mounted on a flexible substrate such as the power receiving device 450 shown in FIG. By providing the power receiving device 724 on the cylindrical secondary battery 715, the power receiving device 724 can be provided along the curved surface of the cylindrical secondary battery 715. Therefore, the space occupied by the power receiving device 724 can be reduced. As a result, the electronic device including the secondary battery 715 and the power receiving device 724 can be made smaller.

[0298] [Flat-shaped secondary battery]

[0299] Next, an example of the internal configuration of the flat secondary battery 913 will be described.

[0300] The structure of the wound body 950 disposed inside the secondary battery 913 is shown in FIG. 22A. The wound body 950 includes a negative electrode 931, a positive electrode 932, and a separator 933. The negative electrode 931 and the positive electrode 932 are stacked on top of each other with a separator 933 sandwiched therebetween, and the stacked sheet The negative electrode 931, the positive electrode 932, the separator 933, and the , and the laminated layers may be stacked a plurality of times.

[0301] The negative electrode 931 is electrically connected to one of the terminals 951 and 952, and the positive electrode 932 is It is electrically connected to the other of the terminal 951 or the terminal 952 .

[0302] In FIG. 22B, secondary battery 913 is disposed inside housing 930 (also called "exterior body"). The winding body 950 is provided with a terminal 951 and a terminal 952. The winding body 950 is provided with a housing 930. The terminal 952 is in contact with the housing 930, and the terminal 951 is in contact with the insulating material. 22B, the housing 930 is not in contact with the housing 930. Although shown separately, in reality, the winding body 950 is covered by the housing 930, and the terminals 951 and Terminals 952 extend outside the housing 930. The housing 930 may be made of a metal material (e.g., aluminum). Aluminum or a resin material can be used.

[0303] The housing 930 can be made of an insulating material such as a metal material or an organic resin. 30 may be made of a film, in which case the film may be provided with a flexible substrate. In some cases, a charge control circuit is provided.

[0304] [Battery pack] Next, a battery pack 901 including a flat secondary battery 913 will be described. 9 is an external view of the secondary battery 913. The secondary battery 913 has a terminal 951 and a terminal 952. The terminal 951 is electrically connected to the positive electrode inside the secondary battery 913, and the terminal 952 is It is electrically connected to the negative electrode inside the battery 913 .

[0305] 23B is an external view of the power receiving device 900 and the layer 916. The power receiving device 900 includes a circuit 9 12 and an antenna 914, which are mounted on a flexible substrate. The circuit 912 is electrically connected to a terminal 971 and a terminal 972. The circuit 912 is electrically connected to the terminal 911.

[0306] The secondary battery 913 is connected to the power receiving device 900, the terminal 951, the terminal 952, and the terminal 911. It also functions as a battery pack.

[0307] The power receiving device 900 corresponds to, for example, the power receiving device 450 shown in the above embodiment. 2 includes a power receiving circuit 451, a charge control circuit 452, a charge / discharge control circuit 453, and the like. The antenna 914 corresponds to the power receiving antenna 403 shown in the above embodiment.

[0308] The antenna is not limited to a coil shape, but may be, for example, a wire shape or a plate shape. antenna, aperture antenna, traveling wave antenna, EH antenna, magnetic field antenna, dielectric antenna An antenna such as the above may also be used.

[0309] The terminal 911 is connected to, for example, a device to which power from the secondary battery is supplied. , sensors, etc.

[0310] The layer 916 shown in FIG. 23B can shield the electromagnetic field generated by, for example, the secondary battery 913. The layer 916 may be made of, for example, a magnetic material.

[0311] 23C shows a battery pack in which the power receiving device 900 is placed on the secondary battery 913. is electrically connected to terminal 951, and terminal 972 is electrically connected to terminal 952. 16 is disposed between the power receiving device 900 and the secondary battery 913 .

[0312] The power receiving device 900 is preferably provided on a flexible substrate. This allows for a thin power receiving device 900 to be realized. The power receiving device 900 can be wrapped around the secondary battery.

[0313] Next, as another configuration example of the battery pack 901, a battery pack will be described with reference to FIGS. 24A to 24D. 24A is an external view of the secondary battery 913. The power receiving device 900 shown in FIG. 23B includes a circuit 912 and an amplifier. 24B also shows layer 916.

[0314] As shown in FIG. 24C, the power receiving device 900 provided on the flexible substrate is formed in the shape of a secondary battery 913. By bending it to fit the secondary battery and placing it around the power receiving device, as shown in Figure 24D The device 900 can be wrapped around the secondary battery.

[0315] Next, as another configuration example of the battery pack 901, a battery pack will be described with reference to FIGS. 25A to 25D. The secondary battery 913 shown in FIG. 25A is L-shaped when viewed from one side. It has the shape of

[0316] FIG. 25B shows an example in which the flexible substrate on which the power receiving device 900 is provided has a notch. The notched portion may also be called a slit. Like the battery 913, it has an L-shape.

[0317] As shown in FIGS. 25C and 25D, the flexible substrate has a notch. A part of the power receiving device 900 (the area on the right side of the notch) is attached to the rear side of the L-shaped secondary battery 913. 25C shows a part of the power receiving device 900 wrapped around an L-shaped secondary battery 9 25A shows the state in the middle of being wound around 13, and FIG. 25B shows the state after being wound. Figure.

[0318] By providing the power receiving device 900 on a flexible substrate, the power receiving device 900 can be shaped to fit the shape of the secondary battery 913. Therefore, the space occupied by the power receiving device 900 can be reduced. This allows the battery pack to be made smaller and lighter. The battery pack according to one aspect of the present invention can be used to reduce the size of electronic devices and the like. It is possible to realize weight reduction of electronic devices and the like that include the battery pack according to one aspect.

[0319] This embodiment mode may be implemented by appropriately combining with the configurations described in other embodiment modes and examples. It is possible to implement this.

[0320] (Sixth embodiment) In this embodiment, a positive electrode active material according to one embodiment of the present invention will be described.

[0321] In this specification, segregation refers to the phenomenon in a solid consisting of multiple elements (e.g., A, B, C). This refers to the phenomenon in which a certain element (e.g., B) is distributed spatially non-uniformly.

[0322] In this specification, the surface layer of particles of active material or the like refers to the region from the surface to about 10 nm. The surface caused by cracks or fractures can also be called the surface. It's called inside.

[0323] In the present specification and the like, the layered rock salt type crystal structure of a composite oxide containing lithium and a transition metal is The structure has a rock-salt type ion arrangement in which cations and anions are arranged alternately, and the transition metal and lithium The lithium atoms are regularly arranged to form a two-dimensional plane, allowing two-dimensional diffusion of lithium. It refers to the crystal structure. There may be defects such as deficiencies of cations or anions. Strictly speaking, the rock salt crystal structure is a distorted rock salt crystal lattice structure. be.

[0324] In this specification and the like, the rock salt type crystal structure refers to a structure in which cations and anions are arranged alternately. It is acceptable for there to be a deficiency of cations or anions.

[0325] In the present specification and the like, the pseudospinel type composite oxide containing lithium and a transition metal The crystal structure is in the space group R-3m, and although it is not a spinel-type crystal structure, cobalt, Ions such as magnesium ions occupy the 6-coordinated oxygen sites, and the arrangement of cations is similar to that of spinel. The pseudo-spinel type crystal structure is characterized by the symmetry of the crystal structure. may occupy the oxygen tetracoordinate site, and in this case the ionic arrangement also has a symmetry similar to that of the spinel type. It has sexuality.

[0326] The pseudo-spinel crystal structure has random Li between layers, but the CdCl2 crystal structure It can be said that this crystal structure is similar to the CdCl2 type. The configuration is as follows: Lithium nickel oxide is charged to a charge depth of 0.94 (Li 0.06 NiO 2) Similar to the crystal structure of 2), but pure lithium cobaltate or a layered rock containing a large amount of cobalt. It is known that salt-type positive electrode active materials do not usually have this crystal structure.

[0327] Layered rock salt crystals and the anions in rock salt crystals are cubic close-packed (face-centered cubic lattice) It is estimated that the anions in pseudospinel crystals also have a cubic close-packed structure. When the anions are in contact, there exists a crystal plane where the cubic close-packed configuration formed by the anions is aligned. However, the space group of layered rock salt crystals and pseudospinel crystals is R-3m, and the space group of rock salt crystals is R-3m. The crystal space groups Fm-3m (the common rock salt crystal space group) and Fd-3m (the simplest Since the space group is different from that of rock salt crystals with symmetry, the mirror crystals that satisfy the above conditions The index is different between layered rock salt crystals and pseudospinel crystals and rock salt crystals. is composed of anions in layered rock salt crystals, pseudospinel crystals, and rock salt crystals. When the orientation of the resulting cubic close-packed structure is aligned, the crystal orientation is said to be roughly the same. be.

[0328] A secondary battery has, for example, a positive electrode and a negative electrode. The material that constitutes the positive electrode is a positive electrode active material. The positive electrode active material is, for example, a material that undergoes a reaction that contributes to the charge / discharge capacity. The substance may partially contain a substance that does not contribute to the charge / discharge capacity.

[0329] In this specification and the like, the positive electrode active material according to one embodiment of the present invention is a positive electrode material or a secondary battery In addition, in this specification and the like, The positive electrode active material preferably contains a compound. The positive electrode active material according to the present invention preferably has a composition. The positive electrode active material according to one embodiment preferably includes a composite.

[0330] <Cathode active material> By using the positive electrode active material according to one embodiment of the present invention, the capacity of a secondary battery can be increased and charging can be performed. The decrease in discharge capacity due to discharge cycles can be suppressed.

[0331] [Composition of positive electrode active material] The positive electrode active material preferably contains a metal (hereinafter referred to as element A) that serves as a carrier ion. The element A may be, for example, an alkali metal such as lithium, sodium, or potassium, or calcium. Group 2 elements such as arsenic, beryllium, and magnesium can be used.

[0332] In the positive electrode active material, carrier ions are released from the positive electrode active material during charging. The greater the separation, the more ions that contribute to the capacity of the secondary battery, and the greater the capacity. If there is a large amount of desorption, the crystalline structure of the compound contained in the positive electrode active material is likely to collapse. The collapse of the crystal structure may lead to a decrease in discharge capacity due to charge-discharge cycles. The positive electrode active material according to the embodiment contains the element X, and thus the carrier ions When element X is desorbed, the collapse of the crystal structure may be suppressed. The element X is substituted at the position of element A. Elements such as titanium and barium can be used. For example, element X can be copper, potassium, Elements such as sodium and zinc can be used. The element X can be any of the elements listed above. Two or more of these may be used in combination.

[0333] Furthermore, the positive electrode active material according to one embodiment of the present invention preferably contains a halogen in addition to the element X. It is preferable that the cathode active material contains a halogen such as fluorine or chlorine. When the substance has the halogen, the substitution of element X at the position of element A is promoted. There is.

[0334] In addition, the positive electrode active material according to one embodiment of the present invention has a valence that changes with charging and discharging of the secondary battery. The element M is, for example, a transition metal. The positive electrode active material contains, for example, one or more of cobalt, nickel, and manganese as the element M. In particular, cobalt is present. Also, there are elements such as aluminum at the position of element M, which do not change valence. and an element that can have the same valence as element M, more specifically, a trivalent typical element, The aforementioned element X may be substituted at the position of the element M. When the positive electrode active material according to the above is an oxide, the element X may be substituted at the oxygen position.

[0335] As an example of a positive electrode active material according to one embodiment of the present invention, a lithium complex having a layered rock salt crystal structure may be used. More specifically, for example, a silicon oxide having a layered rock salt type crystal structure is preferably used. Lithium composite oxides include lithium cobalt oxide, lithium nickel oxide, nickel, manganese Lithium composite oxide with nickel and cobalt, nickel, cobalt and aluminum In addition, these positive electrode active materials can be used as the voids. It is preferable that the intermediate group be represented by R-3m.

[0336] In the positive electrode active material with a layered rock salt crystal structure, the crystal structure collapses as the charge depth increases. Here, the breakdown of the crystal structure may be, for example, a shift in the layers. If the cycle is irreversible, the capacity of the secondary battery may decrease as it is repeatedly charged and discharged. do.

[0337] The positive electrode active material according to one embodiment of the present invention contains the element X, which, for example, increases the depth of charge. Even if the layer is not fully charged, the layer displacement is suppressed. Therefore, the positive electrode active material according to one embodiment of the present invention has excellent Furthermore, the positive electrode active material according to one embodiment of the present invention can achieve high voltage and cycle characteristics. Therefore, the positive electrode active material according to one embodiment of the present invention can have a stable crystal structure in a charged state. The substance may be less likely to short circuit when held in a charged state at a high voltage. In such a case, safety is further improved, which is preferable.

[0338] In the positive electrode active material according to one embodiment of the present invention, the charge capacity is increased in a state where the positive electrode is fully discharged and in a state where the positive electrode is charged at a high voltage. Changes in crystal structure and volume differences when compared per the same number of transition metal atoms in the crystal structure is small.

[0339] The positive electrode active material according to one embodiment of the present invention has the chemical formula AM y O Z In the case of (y>0, z>0) For example, lithium cobalt oxide is sometimes represented as LiCoO2. Lithium nickel oxide is sometimes represented as LiNiO2.

[0340] In the positive electrode active material according to one embodiment of the present invention, which contains the element X, when the depth of charge is 0.8 or more, In this case, the crystal structure is represented by the space group R-3m, and although it is not a spinel-type crystal structure, it contains the element M (e.g. ions of element X (e.g., magnesium) occupy the oxygen hexacoordinate positions, and cations In some cases, the arrangement of the ions has a symmetry similar to that of the spinel type. It is called a spinel-type crystal structure. In addition, the pseudo-spinel-type crystal structure is Oxygen may occupy four coordination sites, and in this case the ionic arrangement also has a symmetry similar to that of the spinel type. It has.

[0341] The structure of the positive electrode active material becomes unstable due to the detachment of carrier ions during charging. The crystalline structure can maintain high stability even when carrier ions are removed. It can be said that this is a structure that

[0342] In the case of a high depth of charge of the present invention, a positive electrode active material having a pseudo-spinel structure is used in a secondary battery. By using this, for example, at a voltage of about 4.6 V based on the potential of lithium metal, More preferably, the positive electrode active material is stable at a voltage of about 4.65 V to 4.7 V. This makes it possible to suppress the capacity decrease due to charging and discharging. For example, when graphite is used as the negative electrode active material, the voltage of the secondary battery is 4.3V or more, and V or less, more preferably 4.35 V or more and 4.55 V or less, of the positive electrode active material The structure is stable, and the decrease in capacity due to charging and discharging can be suppressed.

[0343] The pseudo-spinel crystal structure has random Li between layers, but the CdCl2 crystal structure It can be said that this crystal structure is similar to the CdCl2 type. The configuration is as follows: Lithium nickel oxide is charged to a charge depth of 0.94 (Li 0.06 NiO 2) Similar to the crystal structure of 2), but pure lithium cobaltate or a layered rock containing a large amount of cobalt. It is known that salt-type positive electrode active materials do not usually have this crystal structure.

[0344] Layered rock salt crystals and the anions in rock salt crystals are cubic close-packed (face-centered cubic lattice) It is estimated that the anions in pseudospinel crystals also have a cubic close-packed structure. When the anions are in contact, there exists a crystal plane where the cubic close-packed configuration formed by the anions is aligned. However, the space group of layered rock salt crystals and pseudospinel crystals is R-3m, and the space group of rock salt crystals is R-3m. The crystal space groups Fm-3m (the common rock salt crystal space group) and Fd-3m (the simplest Since the space group is different from that of rock salt crystals with symmetry, the mirror crystals that satisfy the above conditions The index is different between layered rock salt crystals and pseudospinel crystals and rock salt crystals. is composed of anions in layered rock salt crystals, pseudospinel crystals, and rock salt crystals. When the orientation of the resulting cubic close-packed structure is aligned, the crystal orientation is said to be roughly the same. be.

[0345] The pseudospinel crystal structure has the coordinates of cobalt and oxygen in the unit cell as Co(0, 0,0.5), O(0,0,x), and can be shown within the range of 0.20≦x≦0.25. .

[0346] In the positive electrode active material according to one embodiment of the present invention, the volume of the unit cell at a charge depth of 0 is The difference between the product and the volume per unit cell of a pseudospinel crystal structure with a charge depth of 0.82 is 2. It is preferably 5% or less, and more preferably 2.2% or less.

[0347] In the pseudospinel crystal structure, 2θ = 19.30 ± 0.20° (19.10° or more, 19. 50° or less), and 2θ=45.55±0.10° (45.45° or more and 45.65° or less) A diffraction peak appears at 2θ=19.30±0.10° (1 9.20° or more and 19.40° or less), and 2θ = 45.55 ± 0.05° (45.50 A sharp diffraction peak appears at temperatures between 45° and 45.60°.

[0348] Note that the positive electrode active material according to one embodiment of the present invention has a pseudospinel crystal structure when charged at a high voltage. However, not all of the particles need to have a pseudospinel type crystal structure. However, the XRD pattern may be When the Tobeld analysis was performed, it was found that the pseudo-spinel crystal structure was preferably 50 wt% or more. It is preferable that the content is 60 wt% or more, and more preferable that the content is 66 wt% or more. It is preferable that the pseudo-spinel type crystal structure is 50 wt% or more, more preferably 60 wt% or more, and even more preferably 10 wt% or more. Furthermore, if the content is more preferably 66 wt % or more, the positive electrode active material will have sufficiently excellent cycle characteristics. This can be done.

[0349] The number of atoms of the element X is preferably 0.001 times or more and 0.1 times or less the number of atoms of the element M, and more preferably 0.0 It is more preferable that the ratio is greater than 1 and less than 0.04, and more preferably about 0.02. The concentration of element X can be determined by, for example, performing elemental analysis of the entire particle of the positive electrode active material using ICP-MS or the like. It may be a value determined by the calculation or may be based on the value of the blending of raw materials in the process of producing the positive electrode active material. stomach.

[0350] When the element M has cobalt and nickel, the number of atoms of cobalt and nickel is The ratio of nickel atoms (Ni) to the total (Co+Ni) is Ni / (Co+Ni), It is preferably less than 0.1, and more preferably 0.075 or less.

[0351] The positive electrode active material according to one embodiment of the present invention is not limited to the materials listed above.

[0352] As the positive electrode active material, for example, a composite oxide having a spinel type crystal structure can be used. Furthermore, for example, a polyanion-based material can be used as the positive electrode active material. Examples of anionic materials include materials with an olivine-type crystal structure and Nasicon-type materials. In addition, for example, a material containing sulfur can be used as the positive electrode active material. Cut.

[0353] As an example of a material with a spinel-type crystal structure, a composite oxide represented by LiM2O4 is It is preferable to have Mn as the element M. For example, LiMnO 4 can be used. In addition, by having Ni in addition to Mn as the element M, This is preferable because it may improve the discharge voltage of the secondary battery and improve the energy density. A small amount of lithium-containing material with a spinel-type crystal structure containing manganese, such as iMn2O4, Amount of lithium nickel oxide (LiNiO2 or LiNi 1-x M x O2 (M=Co, Al, etc.) ) is preferably mixed, since it is possible to improve the characteristics of the secondary battery.

[0354] As a polyanion-based material, for example, a compound having oxygen, an element X, a metal A, and a metal M is used. Composite oxides can be used. Metal M is Fe, Mn, Co, Ni, Ti, V, or Nb. The metal A is one or more of Li, Na, and Mg, and the element X is S, P, Mo, W, It is one or more of As and Si.

[0355] Examples of materials having an olivine-type crystal structure include composite materials (general formula LiMPO4 (where M is , Fe(II), Mn(II), Co(II), Ni(II) is possible. Representative examples of the general formula LiMPO4 include LiFePO4, LiNiPO4, L iCoPO4, LiMnPO4, LiFe a Ni b PO4, LiFe a Co b PO4, L iFe a Mn b PO4, LiNi a Co b PO4, LiNi a Mn b PO4 (a + b is 1 hereafter, 0 < a < 1, 0 < b < 1), LiFe c Ni d Co e PO4, LiFe c Ni d M n e PO4, LiNi c Co d Mn e PO4 (c + d + e is 1 or less, 0 < c < 1, 0 < d < 1, 0 < e < 1), LiFe f Ni g Co h Mn i PO4 (f + g + h + i is 1 or less, 0 < f < 1, 0 < g < 1, 0 < h < 1, 0 < i < 1), etc., lithium compounds can be used. is possible.

[0356] Also, composite materials such as the general formula Li (2-j) MSiO4 (M is one or more of Fe(II), Mn(II), Co(I I), Ni(II), 0 ≦ j ≦ 2), etc., can be used. General formula Li (2-j) MSiO4 representative examples include Li (2-j) FeSiO4, Li (2- j) NiSiO4, Li (2-j) CoSiO4, Li (2-j) MnSiO4, Li ( 2-j) Fe kNi l SiO4, Li (2-j) Fe k Co l SiO4, Li (2-j) Fe k Mn l SiO4, Li (2-j) Ni k Co l SiO4, Li (2-j) Ni k M n l SiO4 (where k + l is less than or equal to 1, 0 < k < 1, 0 < l < 1), Li (2-j) Fe m Ni n Co q SiO4, Li (2-j) Fe m Ni n Mn q SiO4, Li (2-j) Ni m Co n Mn q SiO4 (where m + n + q is less than or equal to 1, 0 < m < 1, 0 < n < 1, 0 < q < 1), Li (2-j) Fe r Ni s Co t Mn u SiO4 (where r + s + t + u is less than or equal to 1, 0 < r < 1, 0 < s < 1, 0 < t < 1, 0 < u < 1), etc., lithium compounds can be used as materials. This is possible.

[0357] Also, A x NASICON-type compounds represented by the general formula M2(XO4)3 (A = Li, Na, Mg, M = Fe, Mn, Ti, V, Nb , X = S, P, Mo, W, As, Si) can be used. Examples of NASICON-type compounds include Fe2(MnO4)3, Fe2(SO4)3, Li3Fe2(PO4)3, etc. Also, as the positive electrode active material, compounds represented by the general formula Li2MPO4F, Li 2MP2O7, Li5MO4 (M = Fe, Mn) can be used. can be done.

[0358] In addition, as the positive electrode active material, perovskite-type fluorides such as NaFeF3 and FeF3, Ti Metal chalcogenides (sulfides, selenides, tellurides) such as S2 and MoS2, LiMV Oxides with an inverse spinel crystal structure such as O4, vanadium oxides (V2O5, V6 O 13 Materials such as manganese oxides and organic sulfur compounds can be used. Cut.

[0359] In addition, the positive electrode active material is a lithium ion battery with the general formula LiMBO3 (where M is Fe(II), Mn(II), C o(II)) can be used.

[0360] Examples of materials containing sodium include NaFeO2 and Na 2 / 3 [Fe 1 / 2 Mn1 / 2 ]O2, Na 2 / 3 [Ni 1 / 3 Mn 2 / 3 ]O2, Na2Fe2(SO4)3, N a3V2(PO4)3, Na2FePO4F, NaVPO4F, NaMPO4 (M is F e(II), Mn(II), Co(II), Ni(II)), Na2FePO4F, Na Sodium-containing oxides such as 4Co3(PO4)2P2O7 are used as the positive electrode active material. It is possible.

[0361] In addition, lithium-containing metal sulfides can be used as the positive electrode active material. 2TiS3, Li3NbS4, etc.

[0362] This embodiment mode may be implemented by appropriately combining with the configurations described in other embodiment modes and examples. It is possible to implement this.

[0363] (Embodiment 7) In this embodiment, an example of a material and a structure that can be used for a secondary battery will be described. do.

[0364] A secondary battery according to one embodiment of the present invention includes a positive electrode, a negative electrode, and an electrolyte. Such a secondary battery includes, for example, an electrolytic solution containing an electrolyte, a separator sandwiched between a positive electrode and a negative electrode, Alternatively, the secondary battery according to one embodiment of the present invention may include, for example, a solid electrolyte sandwiched between a positive electrode and a negative electrode. The positive electrode, the negative electrode and the electrolyte are preferably enclosed in an outer casing.

[0365] [Positive electrode] The positive electrode has a positive electrode active material layer. The positive electrode active material layer has at least a positive electrode active material. In addition to the materials, other materials such as a coating on the surface of the active material, a conductive additive, or a binder may be included. The positive electrode may have a current collector, and the positive electrode active material layer may be formed on the current collector.

[0366] As the conductive additive, a carbon material, a metal material, a conductive ceramic material, or the like can be used. A fibrous material may also be used as the conductive additive. The content of the electrical auxiliary agent is preferably 1 wt% or more and 10 wt% or less, and more preferably 1 wt% or more and 5 wt% or less. is more preferred.

[0367] Examples of the conductive additive include natural graphite, artificial graphite such as mesocarbon microbeads, and carbon fiber. Examples of carbon fibers that can be used include mesophase pitch carbon fibers. Carbon fibers such as isotropic pitch-based carbon fibers can be used. Carbon nanofibers and carbon nanotubes can also be used. Examples of agents include carbon black (acetylene black (AB)), graphite, Carbon materials such as (graphite) particles, graphene, and fullerene can be used. For example, metal powders and fibers such as copper, nickel, aluminum, silver, and gold, and conductive ceramics. Materials such as lacquer can be used.

[0368] Furthermore, a graphene compound may be used as the conductive additive. , graphene, multigraphene or RGO are particularly preferred. GO is obtained by reducing graphene oxide (GO). It refers to a compound that can be

[0369] Polystyrene, polymethyl acrylate, polymethyl methacrylate (Polymethyl methacrylate) methyl methacrylate, PMMA), sodium polyacrylate, polyvinyl alcohol ( PVA), polyethylene oxide (PEO), polypropylene oxide, polyimide, poly Polyvinyl chloride, polytetrafluoroethylene, polyethylene, polypropylene, polyiso Butylene, polyethylene terephthalate, nylon, polyvinylidene fluoride (PVDF) , polyacrylonitrile (PAN), ethylene propylene diene polymer, polyvinyl acetate It is preferable to use materials such as cellulose or nitrocellulose.

[0370] In addition, styrene-butadiene rubber (SBR) and styrene-isoprene are used as binders. Styrene rubber, acrylonitrile-butadiene rubber, butadiene rubber, ethylene-propylene It is preferable to use a rubber material such as a olefin-diene copolymer. Rubber can be used. It is also preferable to use a water-soluble polymer as the binder. As the water-soluble polymer, for example, polysaccharides can be used. Carboxymethyl cellulose (CMC), methyl cellulose, ethyl cellulose, hydro Cellulose derivatives such as hydroxypropyl cellulose, diacetyl cellulose, and regenerated cellulose These water-soluble polymers can be used in combination with the rubber material mentioned above. It is more preferable to use it in combination.

[0371] The binder may be used in combination with two or more of the above.

[0372] The current collector may be made of metals such as stainless steel, gold, platinum, aluminum, titanium, or any of these metals. Highly conductive materials such as alloys can be used. Silicon, titanium, neodymium, Aluminum alloys with added elements such as scandium and molybdenum that improve heat resistance Alternatively, a metal element that reacts with silicon to form silicide can be used. Metal elements that react with silicon to form silicide include zirconium, Titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungste The current collectors are available in foil, plate (sheet), mesh, punched, etc. The current collector may be in the form of a metal, an expanded metal, or the like. It is preferable to use one with a thickness of 5 μm or more and 30 μm or less.

[0373] [Negative electrode] The negative electrode has a negative electrode active material layer. The negative electrode active material layer may have a conductive additive and a binder. The negative electrode may have a current collector, and the negative electrode active material layer may be formed on the current collector.

[0374] The conductive additive and binder that the negative electrode active material layer can have are the same as those that the positive electrode active material layer has. The same materials as the conductive additive and binder that can be used can be used.

[0375] The negative electrode current collector may be made of metals such as copper and titanium, or alloys thereof. The negative electrode current collector is made of a material that does not alloy with carrier ions such as lithium. It is preferable.

[0376] <Negative electrode active material> As the negative electrode active material, for example, an alloy-based material or a carbon-based material can be used.

[0377] As a negative electrode active material, it is possible to carry out charge-discharge reactions by alloying and dealloying reactions with lithium. Any suitable element can be used, such as silicon, tin, gallium, aluminum, Rumanium, lead, antimony, bismuth, silver, zinc, cadmium, indium, etc. Materials containing at least one of these elements can be used. For example, SiO, Mg2Si, Mg2Ge, SnO, SnO2, Mg2Sn, Sn S2, V2Sn3, FeSn2, CoSn2, Ni3Sn2, Cu6Sn5, Ag3Sn ,Ag3Sb,Ni2MnSb,CeSb3,LaSn3,La3Co2Sn7,CoS Examples include b3, InSb, and SbSn.

[0378] In this specification, SiO refers to, for example, silicon monoxide. Alternatively, SiO refers to SiO x Here, it is preferable that x has a value close to 1. For example, x is 0 A value between 0.2 and 1.5 is preferred, and a value between 0.3 and 1.2 is more preferred.

[0379] Carbon materials include graphite, easily graphitizable carbon (soft carbon), and non-graphitizable carbon (hard carbon). carbon nanotubes, graphene, carbon black, etc. may be used. .

[0380] Examples of graphite include artificial graphite and natural graphite. Examples include carbon microbeads (MCMB), coke-based artificial graphite, and pitch-based artificial graphite. Examples of natural graphite include flake graphite and spherical natural graphite.

[0381] In addition, titanium dioxide (TiO2) and lithium titanium oxide (Li4T i5O 12 ), lithium-graphite intercalation compound (Li x C6), niobium pentoxide (Nb2O5) Oxides such as tungsten oxide (WO2) and molybdenum oxide (MoO2) can be used. can.

[0382] In addition, a material that undergoes a conversion reaction can also be used as the negative electrode active material. , cobalt oxide (CoO), nickel oxide (NiO), iron oxide (FeO), etc. A transition metal oxide that does not form an alloy with the metal may be used as the negative electrode active material. Further materials that can be produced include Fe2O3, CuO, Cu2O, RuO2, Cr2O3, etc. oxide, CoS 0.89 , NiS, CuS and other sulfides, Zn3N2, Cu3N, Ge3 Nitrides such as N4, phosphides such as NiP2, FeP2, CoP3, FeF3, BiF3, etc. It also occurs with fluoride.

[0383] [Electrolyte] The electrolytic solution contains a solvent and an electrolyte. The solvent for the electrolytic solution is preferably an aprotic organic solvent. For example, ethylene carbonate (EC), propylene carbonate (PC), ethylene carbonate, chloroethylene carbonate, vinylene carbonate, gamma-butyrolactone lactone, γ-valerolactone, dimethyl carbonate (DMC), diethyl carbonate (DEC), ethyl methyl carbonate (EMC), methyl formate, methyl acetate, ethyl acetate methyl propionate, ethyl propionate, propyl propionate, methyl butyrate, 1 ,3-dioxane, 1,4-dioxane, dimethoxyethane (DME), dimethyl sulfone oxide, diethyl ether, methyl diglyme, acetonitrile, benzonitrile, tetrahydrofuran One or more of the following may be used: trihydrofuran, sulfolane, sultone, etc. Combinations and ratios may be used.

[0384] In addition, a flame-retardant and non-volatile ionic liquid (room-temperature molten salt) is used as the solvent for the electrolyte. By using one or more batteries, the internal temperature of the secondary battery can be increased due to an internal short circuit or overcharging. Even if the battery is not fully charged, it can prevent the secondary battery from exploding or catching fire. Ionic liquids are made up of cations and anions. The organic cations used in the electrolyte include quaternary cations. Ammonium cations, tertiary sulfonium cations, and quaternary phosphonium cations, etc. aliphatic onium cations such as imidazolium cations and pyridinium cations Aromatic cations are also used as anions in electrolytes. Anions, monovalent methide anions, fluorosulfonate anions, perfluoroalkyl Sulfonate anion, tetrafluoroborate anion, perfluoroalkylborate anion, hexafluorophosphate anion, or perfluoroalkylphosphate anions, etc.

[0385] The electrolyte to be dissolved in the solvent is, for example, LiPF6, LiClO4, Li AsF6, LiBF4, LiAlCl4, LiSCN, LiBr, LiI, Li2SO4 , Li2B 10 Cl 10 , Li2B 12 Cl 12 , LiCF3SO3, LiC4F9SO 3, LiC(CF3SO2)3, LiC(C2F5SO2)3, LiN(CF3SO2) 2. Lithium such as LiN(C4F9SO2)(CF3SO2) and LiN(C2F5SO2)2 Use one or more of these ammonium salts in any combination and ratio. can be done.

[0386] In addition, the electrolyte contains vinylene carbonate, propane sultone (PS), and tert-butyl ether. Benzene (TBB), Fluoroethylene carbonate (FEC), Lithium bis(oxalate) Lithium borate (LiBOB), as well as dinitriles such as succinonitrile and adiponitrile Additives such as compounds may be added. The concentration of the added material is, for example, It should be between 0.1 wt% and 5 wt%.

[0387] Alternatively, a polymer gel electrolyte may be used in which a polymer is swollen with an electrolytic solution. The use of electrolytes increases safety against leakage, etc. Also, the secondary battery can be made thinner and The polymers that can be gelled include silicone gel, acrylic gel, Acrylonitrile gel, polyethylene oxide gel, polypropylene oxide gel The polymer may be, for example, a polyethylene or fluorine-based polymer gel. Polymers with polyalkylene oxide structure such as polyethylene oxide (PEO) and PV DF, polyacrylonitrile, etc., and copolymers containing these can be used. For example, PVDF, a copolymer of PVDF and hexafluoropropylene (HFP), The polymer formed may have a porous shape. stomach.

[0388] In addition, instead of the electrolyte, sulfide-based solid electrolytes, oxide-based solid electrolytes, halide-based solid electrolytes, Electrolytes and the like can be used. Alternatively, polymer materials such as PEO (polyethylene oxide) can be used. When a solid electrolyte is used, a separator In addition, the entire battery can be solidified, eliminating the risk of leakage. This will dramatically improve safety.

[0389] Sulfide-based solid electrolytes include thiosilicon-based (Li 10 GeP2S 12 , Li 3.25 Ge 0.25 P 0.75 S4, etc.), sulfide glass (70Li2S・30P2S5, 30Li2 S·26B2S3·44LiI, 63Li2S·38SiS2·1Li3PO4, 57L i2S・38SiS2・5Li4SiO4, 50Li2S・50GeS2, etc.), sulfide crystals Crystallized glass (Li7P3S 11 , Li 3.25 P 0.95 S4, etc.) are included. Solid electrolytes have high conductivity, can be synthesized at low temperatures, and are relatively soft. This has the advantage that the conductive path is easily maintained even after charging and discharging.

[0390] Oxide-based solid electrolytes include materials with a perovskite crystal structure (La 2 / 3-x Li 3x TiO3, etc.), materials with NASICON-type crystal structure (Li 1-X Al X Ti 2- X (PO4)3, etc.), materials with garnet-type crystal structure (Li7La3Zr2O 12 etc. ), materials with LISICON-type crystal structure (Li 14 ZnGeO 16 etc.), LLZO (Li7La3Zr2O 12 ), oxide glass (Li3PO4-Li4SiO4, 50L i4SiO4·50Li3BO3, etc.), oxide crystallized glass (Li 1.07 Al 0.69 Ti 1.46 (PO4)3, Li 1.5 Al 0.5 Ge 1.5 (PO4)3, etc. Oxide-based solid electrolytes have the advantage of being stable in the atmosphere.

[0391] Halide solid electrolytes include LiAlCl4, Li3InBr6, LiF, and LiCl These halide-based solid electrolytes are also used as porous Composite materials filled into the pores of alumina or porous silica are also used as solid electrolytes. It is possible.

[0392] Also, different solid electrolytes may be mixed and used.

[0393] Among them, Li with NASICON type crystal structure 1+x Al x Ti 2-x (PO4)3( 0 < x < 1) (hereinafter referred to as LATP) contains elements that the positive electrode active material used in the secondary battery 300 according to one aspect of the present invention may have, so a synergistic effect can be expected for improving the cycle characteristics, which is preferable. Also, an improvement in productivity due to process reduction can be expected. In this specification, etc., the NASICON-type crystal structure is a compound represented by M2(XO4)3 (M: transition metal, X: S, P, As, Mo, W, etc.), and refers to a structure in which MO6 octahedra and XO4 tetrahedra share vertices and are three-dimensionally arranged. Therefore, it is preferable because a synergistic effect can be expected for improving the cycle characteristics. Also, an improvement in productivity due to process reduction can be expected. In this specification, etc., the NASICON-type crystal structure is a compound represented by M2(XO4)3 (M : transition metal, X: S, P, As, Mo, W, etc.), and has a structure in which MO6 octahedra and XO4 tetrahedra share vertices and are three-dimensionally arranged.

[0394] [Separator] The secondary battery preferably has a separator. As the separator, for example, paper, non-woven fabric, glass fiber, ceramics, or synthetic fibers made of nylon (polyamide), vinylon (poly vinyl alcohol-based fiber), polyester, acrylic, polyolefin, polyurethane, etc. can be used. The separator is preferably processed into an envelope shape and arranged to wrap either the positive electrode or the negative electrode. The separator may have a multilayer structure. For example, a ceramic-based material, a fluorine-based material, a polyamide-based material, or a mixture thereof, etc. can be coated on an organic material film such as polypropylene or polyethylene. As the ceramic-based material, for example, aluminum oxide particles, silicon oxide particles, etc. can be used. As the fluorine-based material, for example,

[0395] PVDF, polytetrafluoroethylene, etc. can be used. As the polyamide-based material, for example, nylon, aramid (meta-aramid, para-aramid), etc. can be used. PVDF, polytetrafluoroethylene, etc. can be used. As the polyamide-based material, for example, nylon, aramid (meta-aramid, para-aramid), etc. can be used. can be used.

[0396] [Exterior body] The exterior of the secondary battery is made of a metal material such as aluminum or a resin material. Also, a film-like outer casing can be used. For example, polyethylene, polypropylene, polycarbonate, ionomer, polyamide, etc. On the film made of the material, a highly flexible metal such as aluminum, stainless steel, copper, or nickel is A metal thin film is then formed on the metal thin film, and the outer surface of the exterior body is made of a polyamide resin or polyester. A three-layer film having an insulating synthetic resin film such as a vinyl resin can be used.

[0397] [Example of secondary battery configuration] As an example of the configuration of a secondary battery, the configuration of a secondary battery using a solid electrolyte layer will be described below. Reveal.

[0398] In the secondary battery 700 shown in FIG. 26A, a positive electrode 710, a solid electrolyte layer 720, and a negative electrode 7 A combination of a plurality of positive electrodes 710, a solid electrolyte layer 720, and a negative electrode 73 is laminated. By stacking the positive electrode 710, the voltage of the secondary battery can be increased. 7 is a schematic diagram of a four-layer stack of a combination of a solid electrolyte layer 720 and a negative electrode 730. .

[0399] The secondary battery 700 according to one embodiment of the present invention may be a thin-film all-solid-state battery. All-solid-state batteries are manufactured using gas-phase methods (vacuum deposition, pulsed laser deposition, aerosol deposition, The cathode, solid electrolyte, anode, wiring electrodes, etc. can be formed by using the sputtering method. For example, as shown in FIG. 26B, wiring electrodes 741 and 742 are formed on a substrate 740. After forming the wiring electrode 741, the positive electrode 710 is formed on the wiring electrode 741, and the solid electrolyte layer 7 20, and a negative electrode 730 is formed on the solid electrolyte layer 720 and the wiring electrode 742 to form a secondary The battery 700 can be manufactured. The substrate 740 can be a ceramic substrate, a glass substrate, or the like. Plates, plastic substrates, metal substrates, etc. can be used.

[0400] The solid electrolyte of the solid electrolyte layer 720 may be any of the above-mentioned solid electrolytes. do.

[0401] This embodiment mode may be implemented by appropriately combining with the configurations described in other embodiment modes and examples. It is possible to implement this.

[0402] (Embodiment 8) In this embodiment, an electronic device to which a semiconductor device according to one embodiment of the present invention can be applied will be described. do.

[0403] The semiconductor device according to one embodiment of the present invention can be incorporated into various electronic devices. Examples of the device include television sets, desktop or notebook personal computers, etc. Computers, computer monitors, digital signage Signage: Digital signage), pachinko machines and other large game machines with relatively large screens In addition to the electronic devices provided, there are also digital cameras, digital video cameras, and digital photo frames. , mobile phones, portable game machines, personal digital assistants, sound reproducing devices, etc. Mobile objects such as automobiles, motorcycles, ships, and aircraft can also be considered electronic devices. The semiconductor device according to the present invention is used in a charge / discharge control device for a battery built into the electronic device. It can be used.

[0404] The electronic device may have an antenna. By receiving a signal through the antenna, a display unit It can display images and information. In addition, electronic devices have antennas and secondary batteries. In this case, the antenna may be used for contactless power transfer.

[0405] Electronic devices include sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, Magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity may have functions such as measuring degree, gradient, vibration, smell, or infrared rays. stomach.

[0406] Electronic devices can have various functions. For example, they can store various information (still images, videos, text, etc.). Functions for displaying text images, etc. on the display, touch panel function, calendar, date or Functions for displaying time, etc., function for running various software (programs), wireless communication The ability to read out programs or data recorded on a recording medium can be done.

[0407] Examples of electronic devices including a semiconductor device according to one embodiment of the present invention will be described with reference to the drawings. cormorant.

[0408] FIG. 27A shows an example of a wristwatch-type portable information terminal and an example of a power transmitting device. 100 includes a housing 6101, a display unit 6102, a band 6103, an operation button 6105, etc. The power transmitting device 6200 includes a housing 6201, a power cable 6202, a power transmitting antenna 62 03, a driving circuit 6204, etc. The driving circuit 6204 includes a power transmission control circuit, a matching circuit, The portable information terminal 6100 may have a power radiation circuit or the like. The power receiving device receives the power radiated from the power transmitting device 6200. The power receiving device has a function of charging the secondary battery. It may also be a device.

[0409] As shown in FIG. 27B, the portable information terminal 6100 and the power transmitting device 6200 are placed one on top of the other. As a result, power can be efficiently supplied to the portable information terminal 6100. When the built-in secondary battery is fully charged, the power transmission device 6 sends a signal to stop power emission. It has the ability to send to 200.

[0410] The mobile information terminal 6100 is a device that can communicate with a mobile device using Wi-Fi (registered trademark), Bluetooth (registered trademark), etc. In addition to any short-range communication means, communication means compliant with third-generation mobile communication systems such as LTE , communication means compliant with the fourth generation mobile communication system (4G) or the fifth generation mobile communication system It can be equipped with various communication means, including communication means compliant with the 5G system.

[0411] FIG. 28A shows an example of a mobile phone. A mobile phone 6300 is assembled in a housing 6301. In addition to the built-in display 6302, operation buttons 6303, a speaker 6304, a microphone 630 5 and more.

[0412] The mobile phone 6300 also includes a fingerprint sensor 6310 in an area overlapping the display unit 6302. The fingerprint sensor 6310 may be an organic optical sensor. FIG. 28A shows an example of a fingerprint FP. Since fingerprints are different for each individual, the fingerprint sensor 6310 acquires a fingerprint pattern and It is possible to perform personal authentication. A light source for acquiring a fingerprint pattern with the fingerprint sensor 6310 Light emitted from the display portion 6302 can be used as the light source.

[0413] The mobile phone 6300 includes a secondary battery and a power receiving device shown in the above embodiment. The power receiving device receives the power radiated from the power transmitting device 6200 and stores it in the secondary battery. It has a charging function.

[0414] Also, as shown in FIG. 28B, by placing the mobile phone 6300 and the power transmitting device 6200 on top of each other, This allows power to be efficiently supplied to the mobile phone 6300. When the built-in secondary battery is fully charged, the power transmitting device 6200 sends a signal to stop power emission. It has the function of sending to.

[0415] The mobile phone 6300 is equipped with Wi-Fi (registered trademark), Bluetooth (registered trademark), etc. In addition to short-distance communication methods, communication methods that comply with third-generation mobile communication systems such as LTE, Communication means compliant with the 4th generation mobile communication system (4G) or the 5th generation mobile communication system It can be equipped with various communication means, including those compliant with 5G.

[0416] The display unit 6102 shown in FIG. 27A and the display unit 6302 shown in FIG. 28A are provided with a light-emitting element. As the light emitting element, an LED (Light Emitting Diode) g Diode), OLED (Organic LED), QLED (Quantum- Examples of such light-emitting devices include self-luminous light-emitting elements such as LEDs (dot LEDs) and semiconductor lasers. The display element used in the display portion 6102 and the display portion 6302 may be a transmissive liquid crystal element, a reflective liquid crystal element, or the like. A liquid crystal element such as a liquid crystal element of a semi-transmissive type or a liquid crystal element of a shutter type can also be used. MEMS (Micro Electro Mechanical Systems) using optical interference or optical sensing l Systems) elements, microcapsule type, electrophoresis type, electrowet Display elements that use the LCD technology or the electronic liquid powder technology (registered trademark) can be used. It can also be done as follows.

[0417] In one embodiment of the present invention, the organic EL element is particularly used in the display unit 6102 and the display unit 63 By using an organic EL element, it is possible to form a display unit 610 on a flexible substrate. 6100 and a display portion 6302. By applying a flexible display unit to the handset 6300, the weight is reduced and the display unit is less likely to be damaged. It is possible to provide a portable information terminal and a mobile phone in which the above-mentioned problems are reduced.

[0418] The robot 7100 shown in FIG. 29 is equipped with an illuminance sensor, a microphone, a camera, a speaker, a Displays, various sensors (infrared sensors, ultrasonic sensors, acceleration sensors, piezo sensors, It is equipped with a variety of sensors, including optical sensors, gyro sensors, and a movement mechanism.

[0419] The microphone has a function of detecting acoustic signals such as the user's voice and environmental sounds. The speaker also has the function of emitting audio signals such as voice and warning sounds. The 7100 analyzes the audio signal input through the microphone and outputs the necessary audio. The robot 7100 can emit audio signals from a speaker. , and a speaker can be used to communicate with the user.

[0420] The camera has a function of capturing images of the surroundings of the robot 7100. The robot 7100 has the function of moving using a moving mechanism. It can capture images, analyze them, and detect whether or not there are any obstacles when moving. The semiconductor device according to one embodiment of the present invention can be used for a secondary battery (battery) of the robot 7100. This allows overvoltage to be detected during charging. This can improve safety and efficiency.

[0421] The flying object 7120 has a propeller, a camera, a battery, etc., and is an autonomous flying object. Possess the ability.

[0422] For example, image data captured by a camera is stored in the electronic component 7121. 22 can analyze image data and detect the presence or absence of obstacles when moving. In addition, the remaining battery capacity is estimated from the change in the battery storage capacity by the electronic component 7122. The semiconductor device according to one embodiment of the present invention is used for the battery of the aircraft 7120. This makes it possible to detect overvoltage during charging. and safety can be improved.

[0423] The cleaning robot 7140 has a display on the top surface and multiple cameras on the sides. The cleaning robot has a brush, operation buttons, various sensors, etc. The cleaning robot 7140 is equipped with tires, a suction nozzle, etc. The cleaning robot 7140 is self-propelled. It can detect dust and suck it up through a suction port on the bottom.

[0424] For example, the cleaning robot 7140 analyzes the image captured by the camera and detects the wall, furniture, or step. In addition, image analysis can be used to detect the presence or absence of obstacles such as wires in the brush. If it detects an object that is likely to get tangled, it can stop the brush from rotating. By using a semiconductor device according to one embodiment of the present invention for the battery 7140, the overcurrent during charging operation can be reduced. This allows the voltage to be detected, thereby improving the reliability and safety of the cleaning robot 7140. can be improved.

[0425] An electric vehicle 7160 is shown as an example of a moving object. The electric vehicle 7160 is equipped with an engine, a tire, and a The battery of the electric vehicle 7160 has a wheel, brakes, steering device, camera, etc. By using the semiconductor device according to one embodiment, overvoltage during charging can be detected. Therefore, the reliability and safety of the electric vehicle 7160 can be improved.

[0426] In the above description, an electric vehicle is used as an example of a moving object. It is not limited to automobiles. For example, moving objects include trains, monorails, ships, and aircraft (helicopters). Copters, unmanned aerial vehicles (drones), airplanes, rockets, etc. By using a semiconductor device according to one embodiment of the present invention in a battery of such a mobile object, This allows overvoltage to be detected, thereby improving the reliability and safety of these vehicles. It is possible.

[0427] A battery including the semiconductor device of one embodiment of the present invention is used for a TV device 7200 (television receiver device), smartphone 7210, PC 7220 (personal computer), PC 72 30, game machine 7240, game machine 7260, etc.

[0428] The smartphone 7210 is an example of a mobile information terminal. It has a microphone, a camera, a speaker, various sensors, and a display unit.

[0429] The PC7220 and PC7230 are examples of notebook PCs and desktop PCs, respectively. The keyboard 7232 and the monitor device 7233 are connected to the computer 7230 by wireless or wired means. The game console 7240 is an example of a portable game console. The game console 7260 is a stationary game console. The game machine 7260 is an example of a stationary game machine. 262 is connected.

[0430] When an electronic device includes a semiconductor device according to one embodiment of the present invention, power consumption can be reduced. can.

[0431] This embodiment mode may be implemented by appropriately combining with the configurations described in other embodiment modes and examples. It is possible to implement this. [Example]

[0432] The circuit operation of the voltage detection circuit 100TA shown in FIG. 9 was verified using a circuit simulator. The simulator used was SmartSpice from Silvaco.

[0433] As the verification conditions, the channel length of the transistors M1 to M6 is 0.36 μm, the channel width is The capacitance of the capacitors C1 and C2 was 0.36 μm and the threshold voltage was 0.83 V. The capacitance of each of the parasitic capacitances generated at the nodes ND1 to ND4 is 1 pF. The capacitance was set to 1 fF. Also, 0 V was applied to terminal 111, 1.5 V to terminal 114, and 1 fF to terminal 115. It is assumed that a voltage of V is supplied.

[0434] Also, the comparator 101 outputs 0V when the voltage at the non-inverting input is equal to or less than the voltage at the inverting input. and outputs 1V when the voltage at the non-inverting input exceeds the voltage at the inverting input. did.

[0435] When the voltage at the terminal 112 changes from 3.5V to 4.5V, the voltages at the terminals G1 to G6 and The voltage changes of the nodes ND1 to ND4, the terminal 112, and the terminal 113 are calculated by circuit simulation. The calculation results are shown in Figures 30A to 30D and Figures 31A to 31C. The potential change at the terminal 112 used in the calculation is shown in FIG. 31D. 31A to 31D, the vertical axis indicates voltage, and the horizontal axis indicates time (Ti me).

[0436] Figure 30A shows the calculation results for terminals G1, G2, G4, and G5. B is the calculation result for terminals G3 and G6. FIG. 30C is the calculation result for node ND1. FIG. 30D shows the calculation result for node ND2. FIG. 31A shows the calculation result for node ND3. FIG. 31B shows the calculation result for node ND4. FIG. 31C shows the calculation result for terminal 113. This is the calculation result.

[0437] In this embodiment, the terminals G1, G2, G4, and G6 are connected until 20 μs has elapsed from 0 seconds. 10V was supplied to terminals G3 and G5, and 0V was supplied to terminals G3 and G6. Between the transistors M1, M2, M4, and M 5 is turned on, and transistors M3 and M6 are turned off. Therefore, node ND1 is 0V, node ND2 is 1.5V, node ND3 is 0V, and node ND4 becomes 1.5V.

[0438] After 20 μs has elapsed, 0 V is supplied to terminals G1, G2, G4, and G5. 10V was supplied to terminals G3 and G6. After 20μs, the transistor M1, transistor M2, transistor M4, and transistor M5 are turned off. , the transistors M3 and M6 are turned on. The voltages of the nodes ND1 to ND4 change in response to the change in the potential of the terminal 112.

[0439] From Figures 31C and 31D, when the voltage of terminal 112 is 4V or less, the voltage of terminal 113 is It can be seen that the voltage at terminal 112 is 0V, and when the voltage at terminal 112 exceeds 4V, it changes to 1V. By using the simulator, it was possible to confirm that the voltage detection circuit 100TA was operating correctly. Ta. [Explanation of symbols]

[0440] 100: voltage detection circuit, 101: comparator, 111: terminal, 112: terminal, 113: Terminal, 114: Terminal, 115: Terminal, 201: Terminal, 202: Terminal, 300: Secondary battery

Claims

1. a power receiving antenna, a power receiving circuit electrically connected to the power receiving antenna, a charge / discharge control circuit electrically connected to the power receiving circuit, and a secondary battery; the charge / discharge control circuit includes a voltage detection circuit, the voltage detection circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitance element, a second capacitance element, and a comparator; one of the source and the drain of the first transistor is electrically connected to a first terminal; the other of the source and the drain of the first transistor is electrically connected to the one of the source and the drain of the sixth transistor; one of the source and the drain of the second transistor is electrically connected to a second terminal; the other of the source and the drain of the second transistor is electrically connected to one of the source and the drain of the third transistor; the other of the source and the drain of the third transistor is electrically connected to a third terminal; one of the source and the drain of the fourth transistor is electrically connected to the first terminal; the other of the source and the drain of the fourth transistor is electrically connected to the non-inverting input of the comparator; one of the source and the drain of the fifth transistor is electrically connected to the second terminal; the other of the source and the drain of the fifth transistor is electrically connected to the other of the source and the drain of the sixth transistor; the first capacitance element is provided between the other of the source or the drain of the first transistor and the one of the source or the drain of the third transistor; the second capacitance element is provided between the other of the source or the drain of the fourth transistor and the other of the source or the drain of the fifth transistor, The inverting input of the comparator is electrically connected to a fourth terminal; the output of the comparator is electrically connected to a fifth terminal; a negative electrode of the secondary battery electrically connected to the first terminal; a positive electrode of the secondary battery electrically connected to the third terminal.

2. a power receiving antenna, a power receiving circuit electrically connected to the power receiving antenna, a charge / discharge control circuit electrically connected to the power receiving circuit, a first transistor controlled by the charge / discharge control circuit, a second transistor controlled by the charge / discharge control circuit, and a secondary battery; the charge / discharge control circuit includes a voltage detection circuit, the voltage detection circuit includes a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a first capacitance element, a second capacitance element, and a comparator; one of the source and the drain of the third transistor is electrically connected to a first terminal; the other of the source and the drain of the third transistor is electrically connected to the one of the source and the drain of the eighth transistor; one of the source and the drain of the fourth transistor is electrically connected to the second terminal; the other of the source and the drain of the fourth transistor is electrically connected to one of the source and the drain of the fifth transistor; the other of the source and the drain of the fifth transistor is electrically connected to a third terminal; one of the source and the drain of the sixth transistor is electrically connected to the first terminal; the other of the source and the drain of the sixth transistor is electrically connected to the non-inverting input of the comparator; one of the source and the drain of the seventh transistor is electrically connected to the second terminal; the other of the source and the drain of the seventh transistor is electrically connected to the other of the source and the drain of the sixth transistor; the first capacitance element is provided between the other of the source or the drain of the third transistor and the one of the source or the drain of the fifth transistor, the second capacitance element is provided between the other of the source or the drain of the sixth transistor and the other of the source or the drain of the seventh transistor, The inverting input of the comparator is electrically connected to a fourth terminal; the output of the comparator is electrically connected to a fifth terminal; a negative electrode of the secondary battery electrically connected to the first terminal; a positive electrode of the secondary battery electrically connected to the third terminal.

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