Plasma generating device

Abstract

To provide a plasma generation device that provides impurities-reduced active species.SOLUTION: A plasma generation device has a plurality of operation modes including first and second modes, and performs plasma discharge. The plasma generation device includes: a first power-supply unit capable of changing a frequency within a first frequency range; a second power-supply unit capable of changing the frequency within a second frequency range at least partially different from the first frequency range; a dielectric tube; and an antenna module that includes a first unit coil wound around the dielectric tube at least once, a second unit coil wound around the dielectric tube at least once, and a first capacitor connected in series between the first and second unit coils.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present specification relates to a plasma generation device and a control method thereof, and more specifically to a plasma generation device and a control method thereof for reducing by-products generated during plasma discharge. [Background technology]

[0002] Plasma discharges are used in many industrial and scientific applications, including the generation of activated species of various gases for use in various industrial applications such as semiconductor wafer processing, and for the treatment of by-products produced in industrial processes.

[0003] Inductively coupled plasma and capacitively coupled plasma are widely used as plasma sources for generating plasma discharge. Inductively coupled plasma is a method in which RF power is applied to a coil to form an inductive electric field, and plasma discharge occurs via the inductive electric field.

[0004] When generating a plasma discharge, impurities may flow into the active species due to, for example, collisions between the active species or ions generated as a result of the discharge caused by the voltage applied to the discharge antenna and the dielectric tube. Therefore, there is a need to develop a plasma generation device that can reduce the impurities contained in the active species by changing the structure and design of the antenna that generates the plasma discharge. Summary of the Invention [Problem to be solved by the invention]

[0005] One object of the present disclosure is to provide a plasma generating device.

[0006] Another object of the present invention is to provide a plasma generating device that provides activated species with reduced impurities.

[0007] The problems to be solved by this specification are not limited to those mentioned above, and problems not mentioned should be clearly understood by those skilled in the art to which the present invention pertains from this specification and drawings. [Means for solving the problem]

[0008] According to an embodiment of the present specification, there can be provided a plasma generation device that performs plasma discharge and has a plurality of operation modes including a first mode and a second mode, the plasma generation device comprising: a first power supply device that can change the frequency within a first frequency range; a second power supply device that can change the frequency within a second frequency range that is at least partially different from the first frequency range; a dielectric tube; a first unit coil that is wound at least once around the dielectric tube; a second unit coil that is wound at least once around the dielectric tube; and an antenna module that includes a first capacitor connected in series between the first unit coil and the second unit coil, wherein when the operation mode is the first mode, the antenna module induces a first plasma discharge based on a power signal having a first frequency within the first frequency range; and when the operation mode is the second mode, the antenna module induces a second plasma discharge based on a power signal having a second frequency within the second frequency range, the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency corresponds to a first resonant frequency determined according to the first inductance and the first capacitance.

[0009] According to another embodiment of the present specification, there can be provided a control method for a plasma generation device including a first power supply device capable of changing the frequency within a first frequency range, a second power supply device capable of changing the frequency within a second frequency range that is at least partially different from the first frequency range, a dielectric tube, a first unit coil wound at least once around the dielectric tube, a second unit coil wound at least once around the dielectric tube, and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil, the control method including: operating in a first mode of providing RF power to the antenna module with a first frequency as a drive frequency; and operating in a second mode of providing RF power to the antenna module with a second frequency as a drive frequency, wherein the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the second frequency corresponds to a second resonant frequency determined by the first inductance and the first capacitance.

[0010] According to still another embodiment of the present specification, there is provided a plasma generation device that receives power from a first power supply device capable of changing a frequency within a first frequency range when the operation mode is a first mode, and receives power from a second power supply device capable of changing a frequency within a second frequency range that is at least partially different from the first frequency range when the operation mode is a second mode, and generates plasma by receiving power from the second power supply device, the plasma generation device comprising: a dielectric tube; a first unit coil wound around the dielectric tube at least once; a second unit coil wound around the dielectric tube at least once; and a first capacitor connected in series between the first unit coil and the second unit coil. and a plasma generation module, wherein when the operation mode is the first mode, the antenna module induces a first plasma discharge based on a power signal having a first frequency within the first frequency range, and when the operation mode is the second mode, the antenna module induces a second plasma discharge based on a power signal having a second frequency within the second frequency range, the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency corresponds to a first resonant frequency determined based on the first inductance and the first capacitance.

[0011] The solutions to the problems presented in this specification are not limited to the solutions described above, and solutions not mentioned should be clearly understood by those skilled in the art to which the present invention pertains from this specification and drawings. [Effects of the Invention]

[0012] According to the present specification, it is possible to provide a plasma generating device that can be used in various environments.

[0013] According to the present specification, it is possible to provide a plasma generating device in which impurities contained in activated species are reduced.

[0014] The effects of the invention according to this specification are not limited to the effects described above, and effects not mentioned should be clearly understood by those skilled in the art to which the invention pertains from this specification and drawings. [Brief explanation of the drawings]

[0015] [Figure 1] 1 is a diagram illustrating a plasma generation system according to an embodiment of the present specification. [Figure 2] 1 is a diagram illustrating a plasma generation system according to an embodiment of the present specification. [Figure 3] 1 is a diagram for explaining a plasma generation device according to an embodiment of the present specification; [Figure 4] FIG. 2 is a diagram illustrating a DC electrode according to an embodiment of the present specification. [Figure 5] FIG. 1 is a diagram illustrating a DC power supply according to an embodiment of the present specification. [Figure 6] FIG. 2 is a diagram illustrating a DC electrode according to an embodiment of the present specification. [Figure 7] FIG. 1 is a diagram illustrating a DC power supply according to an embodiment of the present specification. [Figure 8] 1A and 1B are diagrams illustrating an antenna module according to an embodiment of the present specification. [Figure 9] 10A to 10C are diagrams for explaining the operation of an antenna module according to an embodiment of the present specification. [Figure 10] 1A and 1B are diagrams illustrating an antenna module according to an embodiment of the present specification. [Figure 11] 10A to 10C are diagrams for explaining the operation of an antenna module according to an embodiment of the present specification. [Figure 12] 1A and 1B are diagrams illustrating the configuration of an antenna module according to an embodiment of the present specification. [Figure 13] FIG. 1 is a diagram illustrating an RF power supply according to an embodiment of the present specification. [Figure 14] FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 15]FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 16] FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 17] 1 is a diagram for explaining a plasma generation device according to an embodiment of the present specification; [Figure 18] 1 is a diagram for explaining a plasma generation device according to an embodiment of the present specification; [Figure 19] 1 is a diagram for explaining a method for controlling a plasma generation device according to an embodiment of the present specification. [Figure 20] 1 is a diagram for explaining a plasma generation device according to an embodiment of the present specification; [Figure 21] 1 is a diagram for explaining a method for controlling a plasma generation device according to an embodiment of the present specification. [Figure 22] FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 23] FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 24] FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 25] FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 26] FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 27] FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 28] FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 29] FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 30] FIG. 1 is a diagram illustrating a plasma generation process according to an embodiment of the present specification. [Figure 31]1 is a diagram for explaining a plasma generation device according to an embodiment of the present specification; [Figure 32] 1 is a diagram for explaining a method for controlling a plasma generation device according to an embodiment of the present specification. [Figure 33] 1 is a diagram for explaining a plasma generation device according to an embodiment of the present specification; [Figure 34] 1 is a diagram for explaining a method for controlling a plasma generation device according to an embodiment of the present specification. [Figure 35] 1 is a diagram for explaining a method for controlling a plasma generation device according to an embodiment of the present specification. [Figure 36] 1A and 1B are diagrams illustrating an antenna module according to an embodiment of the present specification. [Figure 37] 1 is a diagram illustrating a unit antenna according to an embodiment of the present specification; [Figure 38] 10A and 10B are diagrams for explaining voltages applied to an antenna module according to an embodiment of the present specification. [Figure 39] 10A and 10B are diagrams for explaining voltages applied to an antenna module according to an embodiment of the present specification. [Figure 40] 10A and 10B are diagrams for explaining voltages applied to an antenna module according to an embodiment of the present specification. DETAILED DESCRIPTION OF THE INVENTION

[0016] According to an embodiment of the present specification, there can be provided a plasma generation device that performs plasma discharge and has a plurality of operation modes including a first mode and a second mode, the plasma generation device comprising: a first power supply device that can change the frequency within a first frequency range; a second power supply device that can change the frequency within a second frequency range that is at least partially different from the first frequency range; a dielectric tube; a first unit coil that is wound at least once around the dielectric tube; a second unit coil that is wound at least once around the dielectric tube; and an antenna module that includes a first capacitor connected in series between the first unit coil and the second unit coil, wherein when the operation mode is the first mode, the antenna module induces a first plasma discharge based on a power signal having a first frequency within the first frequency range; and when the operation mode is the second mode, the antenna module induces a second plasma discharge based on a power signal having a second frequency within the second frequency range, the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency corresponds to a first resonant frequency determined according to the first inductance and the first capacitance.

[0017] According to an embodiment of the present disclosure, the first power supply device may include a first matching element having a first impedance.

[0018] According to one embodiment of the present specification, when the operating mode is the first mode, the antenna module performs the first plasma discharge based on a power signal having the first frequency, and the first frequency may correspond to the first resonant frequency determined based on the first impedance, the first inductance, and the first capacitance.

[0019] According to one embodiment of the present specification, the second power supply device includes a second matching element having a second impedance, and when the operating mode is a second mode, the antenna module performs the second plasma discharge based on a power signal having the second frequency, and the second frequency may correspond to a second resonant frequency determined based on the second impedance, the first inductance, and the first capacitance, and different from the first resonant frequency.

[0020] According to one embodiment of the present specification, the second resonant frequency may be greater than the first resonant frequency, and when the operating mode is the first mode, a first voltage, which is a voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor, may be smaller than a second voltage, which is a voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor, when the operating mode is the second mode.

[0021] According to one embodiment of the present specification, when the operating mode is the first mode, the voltage across the first unit coil may correspond to the voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0022] According to one embodiment of the present specification, the voltage across the antenna module when the operating mode is the first mode may be smaller than the voltage across the antenna module when the operating mode is the second mode.

[0023] According to one embodiment of the present specification, the magnitude of a first current flowing through the antenna module when the operating mode is the first mode may be smaller than the magnitude of a second current flowing through the antenna module when the operating mode is the second mode.

[0024] According to one embodiment of the present specification, when the operating mode is the first mode, the power consumed by the antenna module may be a first power, and when the operating mode is the second mode, the power consumed by the antenna module may be a second power that is smaller than the first power.

[0025] According to one embodiment of the present specification, there can be provided a control method for a plasma generation device including a first power supply device capable of changing the frequency within a first frequency range, a second power supply device capable of changing the frequency within a second frequency range that is at least partially different from the first frequency range, a dielectric tube, a first unit coil wound at least once around the dielectric tube, a second unit coil wound at least once around the dielectric tube, and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil, the control method including: operating in a first mode of providing RF power to the antenna module with a first frequency as a drive frequency; and operating in a second mode of providing RF power to the antenna module with a second frequency as a drive frequency, wherein the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the second frequency corresponds to a second resonant frequency determined by the first inductance and the first capacitance.

[0026] According to one embodiment of the present specification, the second power supply device may include a second matching element having a second impedance, and the step of operating in the second mode may include operating at a second frequency corresponding to the second resonant frequency determined based on the first inductance, the first capacitance, and the second impedance as a drive frequency.

[0027] According to one embodiment of the present specification, the first power supply device may include a first matching element having a first impedance, and the step of operating in the first mode may include operating with the first frequency corresponding to a first resonant frequency determined based on the first inductance, the first capacitance, and the first impedance as a drive frequency.

[0028] According to one embodiment of the present specification, when the operating mode is the first mode, the power consumed by the antenna module may be a first power, and when the operating mode is the second mode, the power consumed by the antenna module may be a second power greater than the first power.

[0029] According to one embodiment of the present specification, when the operating mode is the first mode, the voltage across the first unit coil may correspond to the voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0030] According to one embodiment of the present specification, the magnitude of a first current flowing through the antenna module when the operating mode is the first mode may be smaller than the magnitude of a second current flowing through the antenna module when the operating mode is the second mode.

[0031] According to one embodiment of the present specification, the method for controlling the plasma generation apparatus may further include the steps of: acquiring a current flowing through the antenna module when the operation mode is the first mode; and changing the operation mode to the second mode when the current flowing through the antenna module is equal to or less than a reference value.

[0032] According to an embodiment of the present specification, the method for controlling the plasma generation device may further include the steps of: acquiring a current flowing through an inverter of the first power supply device when the operation mode is the first mode; and changing the operation mode to the second mode when the current flowing through the inverter of the first power supply device is equal to or less than a reference value.

[0033] According to an embodiment of the present specification, there can be provided a plasma generation device that generates plasma by receiving power from a first power supply device capable of changing the frequency within a first frequency range when an operation mode is in a first mode, and receiving power from a second power supply device capable of changing the frequency within a second frequency range that is at least partially different from the first frequency range when the operation mode is in a second mode, the plasma generation device comprising: a dielectric tube; a first unit coil wound at least once around the dielectric tube; a second unit coil wound at least once around the dielectric tube; and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil, wherein when the operation mode is the first mode, the antenna module induces a first plasma discharge based on a power signal having a first frequency within the first frequency range, and when the operation mode is the second mode, the antenna module induces a second plasma discharge based on a power signal having a second frequency within the second frequency range, the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency corresponds to a first resonant frequency determined based on the first inductance and the first capacitance.

[0034] According to one embodiment of the present specification, the voltage across the antenna module when the operating mode is the first mode may be smaller than the voltage across the antenna module when the operating mode is the second mode.

[0035] According to one embodiment of the present specification, when the operating mode is the first mode, the voltage across the first unit coil may correspond to the voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0036] According to one embodiment of the present specification, an antenna module coupled to a dielectric tube and supplied with power from a power source includes a first unit antenna including a first unit turn having a first point and a second point and a second unit turn having a third point and a fourth point, the first unit turn being disposed between the second unit turn and the dielectric tube, and the second point of the first unit turn being connected to the third point of the second unit turn; a first capacitor electrically interposed between a first terminal of the power source and the first point of the first unit turn, the first point of the first unit turn being connected to the first capacitor; and a second capacitor electrically interposed between a second terminal of the power source and the fourth point of the second unit turn, wherein the capacitance of the second capacitor is smaller than the capacitance of the first capacitor in order to minimize damage to the dielectric tube and generation of by-products due to a voltage applied to the antenna module.

[0037] According to one embodiment of the present specification, the antenna module may include a third capacitor connected between the fourth point of the second unit turn and the second capacitor, and the capacitance of the third capacitor may be smaller than the capacitance of the second capacitor.

[0038] According to an embodiment of the present specification, the capacitance of the first capacitor may be more than twice the capacitance of the second capacitor.

[0039] According to an embodiment of the present specification, a combined capacitance of the first capacitor and the second capacitor may correspond to a capacitance of the third capacitor.

[0040] According to one embodiment of the present specification, the antenna module may further include a second unit antenna including a third unit turn having a fifth point and a sixth point and a fourth unit turn having a seventh point and an eighth point, wherein the third unit turn is positioned between the dielectric tube and the fourth unit turn, the sixth point of the third unit turn is connected to the seventh point of the fourth unit turn, the third capacitor is electrically interposed between the fourth point of the second unit turn and the fifth point of the third unit turn, and the second capacitor is electrically interposed between the eighth point of the fourth unit turn and the second terminal of the power supply.

[0041] According to one embodiment of the present specification, the first unit turn and the second unit turn may be located on a plane perpendicular to the longitudinal direction of the dielectric tube, and each of the first unit turn and the second unit turn may have an arc shape.

[0042] According to one embodiment herein, the first point may be located closer to the tube than the fourth point.

[0043] According to one embodiment of the present specification, when power is supplied to the antenna module, the voltage applied to the reactance component of the first capacitor may be smaller than the voltage applied to the reactance component between the first point and the second point, and the voltage applied to the reactance component of the third capacitor may correspond to the voltage applied to the reactance component between the first point and the fourth point.

[0044] According to one embodiment of the present specification, the antenna module resonates at a resonant frequency determined based on the capacitance of the third capacitor and the inductance of the first unit antenna, and when the antenna module is in a resonant state, a point at which the potential of the reactance component with respect to the first terminal becomes zero may be located on the first unit turn of the first unit antenna.

[0045] According to one embodiment of the present specification, the antenna module resonates at a resonant frequency determined based on the capacitance of the third capacitor and the inductance of the first unit antenna, and when the antenna module is in a resonant state, the voltage applied to the reactance component between the termination of the first point and the first terminal of the power supply may be substantially the same as the voltage applied to the reactance component between the termination of the second point and the first terminal of the power supply.

[0046] According to one embodiment of the present specification, an antenna module coupled to a dielectric tube and supplied with power from a power source can be provided, comprising: a first unit antenna including a first unit turn having a first point and a second point, and a second unit turn having a third point and a fourth point, wherein the first unit turn is positioned between the dielectric tube and the second unit turn, and the second point of the first unit turn is connected to the third point of the second unit turn; a first capacitor electrically interposed between a first terminal of the power source and the first point of the first unit turn; and a second capacitor connected to the fourth point of the second unit turn, wherein the first capacitor is electrically interposed between the first terminal of the power source and the first point, and when power is supplied to the antenna module, a point on the first unit turn at which the voltage of the reactance component with respect to the first terminal becomes zero is located, and the point is the point at which the voltage is lowest in the first unit antenna.

[0047] According to one embodiment of the present specification, the antenna module resonates at a resonant frequency determined based on the capacitance of the second capacitor and the inductance of the first unit antenna, and when the antenna module is in a resonant state, the point at which the voltage in the first unit antenna is lowest may be located within the first unit turn.

[0048] According to an embodiment of the present specification, when power is supplied to the antenna module, the point at which the voltage of the first unit antenna is lowest may be located on the first unit turn.

[0049] According to an embodiment of the present specification, when power is supplied to the antenna module, a point at which the absolute value of the potential of the reactance component in the first unit antenna is minimum may be located on the first unit turn.

[0050] According to an embodiment of the present specification, the capacitance of the first capacitor may be more than twice the capacitance of the second capacitor.

[0051] According to one embodiment of the present specification, the capacitance of the second capacitor may be smaller than the capacitance of the first capacitor in order to minimize damage to the tube and the generation of by-products due to the voltage applied to the antenna module.

[0052] According to one embodiment of the present specification, the antenna module may further include a second unit antenna including a third unit turn extending from a fifth point to a sixth point and a fourth unit turn extending from a seventh point to an eighth point, wherein the third unit turn is located inside the fourth unit turn, the sixth point is connected to the seventh point, the second capacitor is connected between the fourth point and the fifth point, and the antenna module may further include a third capacitor connected between the eighth point and the second terminal of the power supply.

[0053] According to an embodiment of the present specification, the capacitance of the second capacitor may be smaller than the capacitance of the third capacitor.

[0054] According to an embodiment of the present specification, a combined capacitance of the capacitance of the first capacitor and the capacitance of the third capacitor may correspond to the capacitance of the second capacitor.

[0055] According to one embodiment of the present specification, an antenna module can be provided that is coupled to a dielectric tube and receives power from a power source, the antenna module comprising: a first unit antenna including a first unit turn extending from a first point to a second point and a second unit turn extending from a third point to a fourth point, wherein the first unit turn is located inside the second unit turn and the second point is connected to the third point; a first capacitor connected to the first point of the first unit turn and connected between a first terminal of the power source and the first point; and a second capacitor connected between a second terminal of the power source and the fourth point, wherein the capacitance of the second capacitor is different from the capacitance of the first capacitor.

[0056] According to one embodiment of the present specification, the antenna module may further include a third capacitor connected between the fourth point of the second unit turn and the second capacitor, and a second unit antenna including a third unit turn extending from a fifth point to a sixth point and a fourth unit turn extending from a seventh point to an eighth point, wherein the third unit turn is located inside the fourth unit turn and the sixth point is connected to the seventh point, the third capacitor is connected between the fourth point and the fifth point, and the second capacitor is connected between the eighth point and the second terminal of the power source, and a combined capacitance of the capacitance of the first capacitor and the capacitance of the second capacitor may correspond to the capacitance of the third capacitor. (Embodiments of the invention)

[0057] The above objects, features, and advantages of the present specification will become more apparent from the following detailed description taken in conjunction with the drawings. However, the present invention can be modified in various ways and can have various embodiments, and specific embodiments will be illustrated in the drawings and described in detail below.

[0058] In the drawings, the thicknesses of layers and regions are exaggerated for clarity, and when an element or layer is referred to as being "on" or "on" another element or layer, it includes not only directly on the other element or layer, but also when there are other layers or other elements interposed therebetween. The same reference numerals generally refer to the same elements throughout the specification. Furthermore, the same reference numerals are used to refer to elements having the same functions within the same concept shown in the drawings of each embodiment.

[0059] If it is determined that a detailed description of known functions or configurations according to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. Furthermore, numbers (e.g., 1, 2, etc.) used in the description of this specification are merely identification symbols for distinguishing one component from another.

[0060] Furthermore, the suffixes "module" and "section" used in the following description for components are given or mixed together solely for the sake of ease of drafting the specification, and do not have any meanings or roles that are distinct from each other.

[0061] The methods according to the embodiments may be embodied in the form of program instructions that can be executed by various computer means and stored on a computer-readable medium. The computer-readable medium may include, alone or in combination, program instructions, data files, data structures, and the like. The program instructions stored on the medium may be those specially designed and constructed for the embodiments, or those known and available to those skilled in the art of computer software. Examples of computer-readable mediums include magnetic media such as hard disks, floppy disks, and magnetic tape; optical media such as CD-ROMs and DVDs; magneto-optical media such as floptical disks; and hardware devices specially configured to store and execute program instructions, such as ROM, RAM, flash memory, and the like. Examples of program instructions include not only machine language code, such as produced by a compiler, but also high-level language code that can be executed by a computer using an interpreter, for example. The above hardware devices may be configured to operate as one or more software modules to perform the operations of the embodiments, or vice versa.

[0062] 1. Plasma generation system According to one embodiment, a plasma generation system can be provided.

[0063] 1 is a diagram illustrating a plasma generation system according to an embodiment. Referring to FIG. 1, the plasma generation system may include a power supply unit 100 that provides power, a plasma generation unit 200 that receives power from the power supply unit 100 and generates plasma, and a gas supply unit 300 that supplies gas to the plasma generation unit 200. The plasma generation system may further include a processing unit 400 that performs a process using the generated plasma.

[0064] The power supply unit 100 can supply power necessary for generating plasma. The power supply unit 100 can supply power to the plasma generating unit. The power supply unit 100 can include a DC power supply and / or an RF power supply. The power supply unit 100 can provide high voltage pulses to the plasma generating unit 200 via the DC power supply. The power supply unit 100 can provide RF power to the plasma generating unit 200 via the RF power supply.

[0065] The plasma generating unit 200 can generate plasma discharge. The plasma generating unit 200 can obtain a discharge gas and generate plasma discharge through the discharge gas. The plasma generating unit 200 can generate inductively coupled plasma discharge or capacitively coupled plasma discharge.

[0066] The plasma generating unit 200 may be a remote plasma source. The plasma generating unit 200 may generate activated species and provide the generated activated species to the processing unit 400.

[0067] The plasma generating unit 200 may include an atmospheric pressure plasma device that generates plasma discharge under atmospheric pressure (normal pressure). For example, the plasma generating unit 200 may include an atmospheric pressure plasma device that generates plasma discharge under a pressure of several hundred Torr to atmospheric pressure (750 Torr).

[0068] The plasma generating unit 200 may include a low-pressure plasma device that generates low-pressure plasma discharge. For example, the plasma generating unit 200 may include a 10 -5 ~10 -7 The low-pressure plasma device may include a low-pressure plasma device that generates plasma at a process pressure of several mTorr to several Torr using a desired process gas after creating an initial vacuum (base pressure) environment of less than 100 Torr.

[0069] The plasma generating unit 200 can perform low-temperature plasma discharge operations at temperatures ranging from several tens to several hundreds of degrees. For example, the plasma generating unit 200 can perform low-pressure, low-temperature plasma discharge operations for cleaning, etching, deposition, surface treatment, material synthesis, etc. in semiconductor and display processes. In addition, the plasma generating unit 200 can perform atmospheric-pressure, low-temperature plasma discharge operations for cleaning glass substrates, hydrophilic / hydrophobic surface modification, nanotechnology, sterilization, removal of harmful substances, carbon dioxide reduction, etc.

[0070] The plasma generating unit 200 can also perform high-temperature plasma discharge operations for gas reforming, microparticle generation, plasma welding, cutting, metallurgy, and the like, at high temperatures of several thousand to several tens of thousands of degrees.

[0071] Hereinafter, the plasma generating unit 200, plasma generating device, etc. can be interpreted as a device that performs the above-mentioned low-temperature plasma discharge or high-temperature plasma discharge.

[0072] The plasma generator 200 may generate a seed charge for plasma generation. In particular, when the plasma generator 200 performs atmospheric pressure plasma discharge, the plasma generator 200 may generate a seed charge for initial discharge. The plasma generator 200 includes a DC electrode, and may generate a seed charge when a DC high voltage pulse is applied to the DC electrode.

[0073] The plasma generating unit 200 can perform initial discharge and main discharge to generate plasma. The plasma generating unit 200 can perform initial discharge in a capacitively coupled mode (E mode) or main discharge in an inductively coupled mode (H mode). The plasma generating unit 200 includes an inductively coupled antenna including a coil, and can perform initial discharge or main discharge by providing RF power to the inductively coupled antenna.

[0074] The specific configuration and operation of the plasma generating unit 200 will be described in more detail below.

[0075] The gas supply unit 300 may supply a gas for plasma discharge to the plasma generating unit 200. The gas supply unit 300 may supply a reactive gas or a process gas to the plasma generating unit 200. The gas supply unit 300 may supply a gas selected depending on the function or use of the plasma generating unit 200 or the process unit 400.

[0076] For example, the gas supply unit 300 supplies NF3 gas (nitrogen trifluoride gas), Ar gas (argon gas), Xe gas (xenon gas), Kr gas (krypton gas), N2 gas (nitrogen gas), O2 gas (oxygen gas), H2 gas (hydrogen gas), He gas (helium gas), Ne gas (neon gas), SiH4 gas (monosilane gas), NH3 gas (ammonia gas), PH3 gas (phosphine gas), B2H6 gas (diborane gas), and The plasma generating unit 200 can supply any one of the following gases or a mixture of a gas and air: tetrafluoroethylene (CF4), DCS (dichlorosilane), C5F8 (octafluoropentene), CF4 (carbon tetrafluoride), HBr (hydrogen bromide), Cl2 (chlorine), Xe (xenon), Kr (krypton), SF6 (sulfur hexafluoride), and CH4 (methane). The gas supply unit 300 can also supply a gas to the plasma generating unit via a liquid-phase precursor such as TEOS (tetra-ethyl-ortho-silicate), Tetrakis ((ethylmethylamino)zirconium), trimethyl aluminum, or hexamethyldisiloxane.

[0077] The processing unit 400 can perform a process before or after plasma discharge. The processing unit can perform a target process using the plasma generated by the plasma generating unit 200. Alternatively, the processing unit 400 can transfer a material generated by the target process to the plasma generating unit.

[0078] The target process may be a cleaning process that removes fine oil films on the surface through collision of plasma ions / radicals with the surface of the material to be treated, an etching process that generates plasma using a reactive etching gas according to the purpose and uses it to selectively remove materials, a deposition process that deposits materials on the surface by injecting a deposition gas suitable for the purpose and an additive gas for plasma discharge, a modification process that changes the surface properties using plasma, or a material decomposition process that decomposes the target material through plasma discharge.

[0079] The processing unit 400 can perform a target operation related to semiconductor substrate processing. For example, the processing unit 400 can perform a cleaning process inside a process chamber by receiving activated species (e.g., activated hydrogen species) from the plasma generating unit.

[0080] The processing unit 400 may include a processing chamber, a substrate holder disposed within the processing chamber on which a semiconductor substrate (e.g., a silicon semiconductor substrate) to be processed is placed, a showerhead disposed above the substrate holder for supplying substrate processing materials into the processing chamber, and / or a vacuum pump for evacuating air from the processing chamber.

[0081] The plasma generation system may be configured such that the processing unit 400 performs a target process using plasma generated through the plasma generating unit, or by-products generated by the target process in the processing unit 400 may be treated by the plasma generating unit 200. Figure 2 is a diagram illustrating a plasma generation system according to some embodiments.

[0082] 2(a), a plasma generation system according to one embodiment may include a processing unit 401 and a plasma generating unit 201 that processes materials generated by the processing unit 401. For example, referring to FIG. 2(a), the plasma generation system may include a gas scrubber device. The processing unit 401 is a device that performs a semiconductor manufacturing process, and the plasma generating unit 201 can process difficult-to-biodegrade gases, such as sulfur hexafluoride (SF), carbon tetrafluoride (CF), and perfluorocarbon (PFC) gases, that are generated during the semiconductor manufacturing process in the processing unit 401.

[0083] 2(b), a plasma generation system according to one embodiment may include a plasma generator 202 that generates activated species and supplies the activated species to a processing unit 402, and a processing unit 402 that performs a process using the activated species. For example, the plasma generator 202 may generate activated species by plasma discharge of gases such as NF3, H2, N2, O2, C3F8, CF4, Cl2, and SiH4. The processing unit 402 may perform operations such as dry etching, PECVD, PVD, ashing, and cleaning using the activated species generated by the plasma generator 202.

[0084] 2. Plasma generator 2.1 Overview of the plasma generation device The following describes a plasma generating device that resonates at a plurality of resonance frequencies to generate plasma discharge.

[0085] According to one embodiment, a plasma generating device may include multiple modules each having a different impedance. When power is supplied to each module at a corresponding resonant frequency, the plasma generating device may resonate at the corresponding resonant frequency. For example, the plasma generating device may include a first module having a first impedance and a second module having a second impedance, and may resonate at a first frequency corresponding to the first module and a second frequency corresponding to the second module.

[0086] According to an embodiment, the plasma generator may perform different functions depending on the frequency of the applied power. For example, when power is supplied at a first frequency, the plasma generator may perform an initial discharge that promotes the initial generation of plasma. Alternatively, when power is supplied at a second frequency different from the first frequency, the plasma generator may perform a main discharge that continuously generates and maintains plasma.

[0087] The plasma generation device may be configured such that the power transmission configuration varies depending on the frequency of the applied power. When power is supplied at a first frequency, the plasma generation device can supply more power to the first module than to the second module. When power is supplied at a second frequency, the plasma generation device can supply more power to the second module than to the first module.

[0088] In the following, several examples of plasma generating devices including the above-described power supply unit and plasma generating unit will be described.

[0089] 2.2 Configuration of the plasma generation device 2.2.1 Overview 3 is a diagram illustrating a plasma generation apparatus according to an embodiment. Referring to FIG. 3, the plasma generation apparatus according to an embodiment may include a variable frequency RF power supply 101 and a plasma generation unit that receives power from the RF power supply 101 to generate plasma. Referring to FIG. 3, the plasma generation unit may include a dielectric tube 210, gas tubes 211 and 213 located within the dielectric tube 210, and an antenna 220 that is disposed around the dielectric tube 210 and receives power from the RF power supply 101 to form an induction electric field and generate plasma within the dielectric tube 210. The plasma generation apparatus may further include an auxiliary gas supply nozzle 250.

[0090] The RF power supply 101 can change its driving frequency within a variable frequency range. The RF power supply 101 can have a variable frequency range of several hundred kHz to several tens of MHz and / or a power of several tens of kW or more. For example, the RF power supply 101 can be an AC power source that provides power at a frequency within the range of 100 kHz to 5 MHz.

[0091] According to one embodiment, the frequency of the RF power supply 101 may be adapted differently depending on the configuration of the antenna module. For example, the frequency of the RF power supply may vary depending on the spacing of the capacitors included in the antenna module. For example, depending on the spacing of the capacitors included in the antenna module, an RF power supply having a maximum frequency of several MHz or several tens of MHz may be used.

[0092] The RF power supply 101 can perform impedance matching by changing the drive frequency, and can operate the plasma generating unit in a resonant state by changing the drive frequency.

[0093] The RF power supply 101 may include a rectifier that converts commercial AC power into DC power, a controller that provides switching signals to control the driving frequency and power, and an inverter that converts the DC power into RF power based on the switching signals of the controller.

[0094] The dielectric tube 210 may be prepared in the form of a cylindrical tube. The outer diameter of the dielectric tube 210 may be several centimeters to several tens of centimeters. The inner diameter of the dielectric tube 210 may be several millimeters to several centimeters smaller than the outer diameter.

[0095] The dielectric tube 210 may be made of a non-conductive material such as ceramic (e.g., alumina or AlN), sapphire, or quartz.

[0096] The dielectric tube 210 can provide a discharge region where plasma is located. The pressure inside the dielectric tube 210 can be adjusted to be different from the pressure outside. The pressure inside the dielectric tube 210 can be adjusted as needed from an ultra-low pressure conforming to a vacuum, a low pressure of a few millitorr, to normal pressure above atmospheric pressure.

[0097] The gas tubes 211 and 213 can provide a path for supplying gas to the dielectric tube 210 and the inside of the dielectric tube 210. The gas tubes 211 and 213 can suppress contact of plasma with the inner wall of the dielectric tube 210 and ensure plasma stability.

[0098] There may be one or more gas tubes 211, 213. The gas tubes may include a first gas tube 211 and a second gas tube 213. The first gas tube 211 and the second gas tube 213 may have a concentric structure. The first gas tube 211 may provide an input path for a first gas (e.g., a gas for reaction, such as methane gas). The second gas tube 213 may provide an input path for a second gas (e.g., a gas mainly composed of carbon dioxide) having a different composition from the first gas.

[0099] The first gas tube 211 and the second gas tube 213 can provide a swirl flow. For example, the first gas tube 211 can provide an inner swirl flow and the second gas tube 213 can provide an outer swirl flow.

[0100] The antenna module 220 is supplied with power from the RF power supply 101 and is capable of inducing plasma discharge inside the dielectric tube 210. The antenna module 220 is supplied with AC power from the RF power supply 101 and is capable of generating inductively coupled plasma inside the dielectric tube 210. The antenna module 220 will be described in more detail below in the section on electrode breakdown using a more detailed example.

[0101] The auxiliary gas supply nozzle 250 can supply auxiliary gas into the dielectric tube 210. The auxiliary gas supply nozzle 250 can be located adjacent to the other end of the dielectric tube 210 opposite the end where the gas is introduced. The auxiliary gas supply nozzle 250 can be arranged around the periphery of the dielectric tube 210 and can be disposed between the antenna module 220 and the gas outlet (the outlet of the dielectric tube 210).

[0102] The plasma generating device may further include a safety case 190 that encases the dielectric tube 210 and the antenna module 220 and isolates them from external influences while ensuring safety.

[0103] 2.2.2 DC Power Supply and Electrodes The plasma generating apparatus according to one embodiment may include a DC power supply that applies a high DC voltage and a DC electrode (ignition electrode) that generates a capacitively coupled plasma discharge in a dielectric tube when the high DC voltage is applied. In particular, in the case of a plasma generating apparatus used for atmospheric pressure plasma discharge, inductively coupled plasma discharge is more difficult than low pressure plasma discharge, but by providing a seed charge using the ignition electrode, the initial discharge can be assisted and the discharge stability can be further improved.

[0104] The plasma generating device may include one or more discharge electrodes that generate a discharge inside the dielectric tube. The plasma generating device may apply a DC voltage to the discharge electrodes to generate a capacitively coupled discharge, such as a localized streamer discharge, inside the dielectric tube. The plasma generating device may apply a DC voltage to the discharge electrodes to provide a seed charge inside the dielectric tube.

[0105] FIG. 4 is a diagram for explaining a discharge electrode according to one embodiment.

[0106] 4(a), a plasma generating device according to an embodiment may include one or more electrodes connected to a DC power source and positioned around an antenna module 220 to generate plasma discharge. The plasma generating device may include a first electrode 231 positioned above the antenna module 220 and a second electrode 233 positioned below the antenna module 220.

[0107] Referring to FIG. 4(b), the plasma generating device may include a first electrode 231 located on the outer surface of the dielectric tube and positioned above the induction coil 221 of the antenna module 220, and a second electrode 233 arranged to surround the outer surface of the dielectric tube and positioned below the induction coil 221. Referring to FIG. 4(b), the first electrode 231 may be in the form of a square plate. The second electrode 233 may be "C" shaped. Alternatively, the second electrode 233 may include a plurality of slits. To prevent eddy currents from flowing in the second electrode 233 due to the influence of the induced electric fields E1 and E2 formed by the induction coil, the second electrode 233 may have an open loop structure that does not completely surround the outer wall of the dielectric tube.

[0108] The DC power supply can apply a positive high voltage to the first electrode 231 and a negative high voltage to the second electrode 233. When a high voltage pulse is applied between the first electrode 231 and the second electrode 233 by the DC power supply, a capacitively coupled plasma discharge, for example, a vertical streamer discharge, can occur between the first electrode 231 and the second electrode 233.

[0109] FIG. 5 is a diagram illustrating a power supply according to an embodiment.

[0110] Referring to FIG. 5(a), the DC power supply includes an AC-DC converter 111 that converts commercial AC power into a DC voltage, a high-voltage pulse generator 113 that generates positive DC high-voltage pulses via the DC voltage, and a controller 112 that controls the high-voltage pulse generator.

[0111] FIG. 5(b) is a diagram for explaining one embodiment of the high-voltage pulse generator explained in FIG. 5(a).

[0112] 5(b), the high-voltage pulse generator 113 according to one embodiment may include a first transformer 113a including a primary coil that receives DC voltage from the AC-DC converter and a secondary coil that generates a positive DC high-voltage pulse, a first power transistor 113b connected to the primary coil of the first transformer 113a, a second transformer 113c including a primary coil that receives DC voltage from the AC-DC converter and a secondary coil that generates a negative DC high-voltage pulse, and a second power transistor 113d connected to the primary coil of the second transformer. The controller 112 may control the gates of the first power transistor 113b and the second power transistor 113d. One end of the secondary coil of the first transformer 113a is grounded, and the other end of the secondary coil of the first transformer 113a may output a positive DC high-voltage pulse Vo1. One end of the secondary coil of the second transformer 113c is grounded, and the other end of the secondary coil of the second transformer 113c can output a negative DC high voltage pulse Vo2.

[0113] The DC voltage Vin may be a direct current power supply of 12 to 24 V. The control unit 112 may synchronize and control the on-time and repetition frequency of the first power transistor 113b and the second power transistor 113d. The voltage of the DC high-voltage pulse may be several tens of kV, for example, 10 to 50 kV. The repetition frequency of the DC high-voltage pulse may be several kHz to several tens of kHz, for example, 10 kHz to 100 kHz.

[0114] FIG. 6 is a diagram for explaining a discharge electrode according to another embodiment.

[0115] Referring to FIG. 6(a), a plasma generating device according to one embodiment may include one electrode 231 connected to a DC power supply 110 and positioned around an antenna module 220 for generating a plasma discharge.

[0116] The plasma generating device applies a high voltage to the electrode 231 via the DC power supply 110, and can generate a capacitive coupling discharge between the electrode 231 and a surrounding object (e.g., a metal object located inside / outside the dielectric tube). The plasma generating device applies a high voltage to the electrode 231 via the DC power supply 110, and can generate a capacitive coupling discharge between the electrode 231 and the gas tube 211, which is located inside the dielectric tube and is grounded, and the electrode 231. The plasma generating device can generate a discharge between the gas tube 211 and the electrode 231 to provide a seed charge.

[0117] 6(b), the plasma generating device may include an electrode 231 located on the outer surface of the dielectric tube and above the induction coil 221 of the antenna module 220. The electrode 231 may have a square plate shape. The plasma generating device may apply a positive high voltage to the square plate-shaped electrode 231 located on the outer surface of the dielectric tube via a DC power supply to induce a discharge between the electrode 231 and the grounded gas tube 211 located within the dielectric tube. When a high voltage pulse is applied to the electrode 231 by the DC power supply, a capacitively coupled plasma discharge, for example, a streamer discharge, may occur between the electrode 231 and the gas tube 211.

[0118] Figure 7(a) is a diagram for explaining a power supply according to one embodiment. Figure 7(b) is a diagram for explaining one embodiment of the high-voltage pulse generator explained in Figure 7(a). Unless otherwise specified, the contents explained in Figure 5 can be similarly applied to the power supply and high-voltage pulse generator of Figures 7(a) and (b).

[0119] 7(b), a high-voltage pulse generator 113 according to one embodiment may include a transformer 113e including a primary coil that receives DC voltage from an AC-DC converter and a secondary coil that generates a positive DC high-voltage pulse, and a transistor 113f connected to the primary coil of the transformer 113e. The controller 112 may control a gate of the transformer 113e. One end of the secondary coil of the transformer 113f is grounded, and the other end of the secondary coil of the transformer 113f may output a positive DC high-voltage pulse Vout.

[0120] 2.2.3 Induction electrode The plasma generating device may include one or more induction electrodes that generate a discharge inside the dielectric tube. The plasma generating device may include one or more antenna modules that generate an inductively coupled plasma discharge when power is supplied from an RF power source. The antenna modules may operate differently depending on their configuration and the frequency of the input power signal. Several embodiments of the antenna modules are described below.

[0121] 2.2.3.1 Type 1 Antenna Module 8 is a diagram illustrating the configuration of an antenna module according to an embodiment. Referring to FIG. 8, an antenna module 223 according to an embodiment may include a first capacitor 223a, an induction coil 223b, and a second capacitor 223c.

[0122] The first capacitor 223a may be connected between one end of the induction coil 223b and the RF power supply, and the second capacitor 223c may be connected between the other end of the induction coil 223b and the RF power supply. The first capacitor 223a and the second capacitor 223c may have the same capacitance.

[0123] The induction coil 223b may be located between the first capacitor 223a and the second capacitor 223c. The induction coil 223b may be a solenoid coil with a multi-layer structure. The induction coil 223b may be a solenoid coil wound in multiple layers on the outer surface of a dielectric tube. The unit turns constituting the induction coil 223b may be wound to form a reinforcing and interfering magnetic field within the dielectric tube in response to an AC power source. The induction coil 223b may be a solenoid coil wound in one direction multiple times on the outer surface of the dielectric tube.

[0124] The induction coil 223b may be a tightly wound solenoid coil to maximize the number of turns per unit length of the dielectric tube. Although simply shown in Figure 5, the induction coil 223b may be a solenoid coil having a greater number of turns than that shown in Figure 8. For example, the induction coil 223b may have a three-layer structure including an inner solenoid coil, a middle solenoid coil, and an outer solenoid coil connected to each other.

[0125] The induction coil 223b may have a pipe shape through which a refrigerant can flow, may be made of a copper pipe, and may have a circular or rectangular cross section.

[0126] The first capacitor 223a, the induction coil 223b, and the second capacitor 223c are connected in series and can resonate at a first frequency, which can be determined by the capacitance C1 of the first capacitor 223a and the second capacitor 223c, respectively, and the inductance L1 of the induction coil 223b.

[0127] FIG. 9 is a diagram for explaining the operation of the antenna module illustrated in FIG. 8 at the resonant frequency.

[0128] 9, the antenna module can resonate at a first frequency determined by the capacitance C1 of each of the first capacitor 223a and the second capacitor 223c and the inductance L1 of the induction coil 223b. When power is supplied at the first frequency, the first capacitor 223a and the second capacitor 223c can induce a voltage drop opposite to that of the induction coil 223b such that the magnitude of the voltage Va induced across the induction coil 223b is minimized.

[0129] In a resonant state, the first capacitor 223a and the second capacitor 223c can cancel the reactance of the induction coil 223b. The plasma generating device can perform impedance matching by supplying power to the antenna module at a first frequency that causes the reactance of the induction coil 223b to be canceled by the first capacitor 223a and the second capacitor 223c. The first capacitor 223a and the second capacitor 223c can be arranged symmetrically with respect to the induction coil 223b to reduce the voltage applied across the induction coil 223b.

[0130] 2.2.3.2 Second type antenna module Figure 10 illustrates the configuration of antenna modules according to some embodiments. Figures 10(a), 10(b), and 10(c) are diagrams illustrating antenna modules prepared so that the number of turns of the induction coil per unit length of the dielectric tube is different. The antenna modules shown in Figures 10(a), 10(b), and 10(c) can each exhibit different discharge characteristics.

[0131] The plasma generating device can exhibit characteristics of less energy loss and narrower discharge window as the number of turns per unit length of the dielectric tube of the induction coil constituting the antenna module decreases, whereas the plasma generating device can exhibit characteristics of wider discharge window and more advantageous for maintaining discharge as the number of turns per unit length of the dielectric tube of the induction coil constituting the antenna module increases, but higher energy loss can be exhibited.

[0132] 10(a), the antenna module 235 can include unit coils 235b wound with one turn per layer and interlayer capacitors 235a connecting the unit coils of each layer. The 12*1 turn antenna module 235 shown in FIG. 10(a) can be configured so that all antenna unit turns are in close contact with the outer surface of the dielectric tube. The antenna module 235 shown in FIG. 10(a) has a small number of turns per unit length (N / L), which can result in relatively low discharge efficiency, less energy loss, and relatively high process performance.

[0133] Referring to FIG. 10(b), the antenna module 237 may include unit coils 237b wound with two turns per layer and interlayer capacitors 237a connecting the unit coils of each layer. The 6*2 turn antenna module 237 shown in FIG. 10(b) has a larger number of turns per unit length (N / L) than the antenna module 235 shown in FIG. 10(a). The antenna module 237 shown in FIG. 10(b) may exhibit higher discharge efficiency than the antenna module 235 shown in FIG. 10(a). Discharge efficiency may be proportional to the number of turns per unit length (N / L). For example, the antenna module 237 shown in FIG. 10(b) may have twice the discharge efficiency of the antenna module 235 shown in FIG. 10(a).

[0134] 10(c), antenna module 239 may include unit coils 239b wound with three turns per layer and interlayer capacitors 239a connecting the unit coils of each layer. Antenna module 239 has a larger number of turns per unit length (N / L) than antenna modules 235 and 237 of FIGS. 10(a) and 10(b), and may have higher discharge efficiency than antenna modules 235 and 237 of FIGS. 10(a) and 10(b). Antenna module 239 may have the property of easier discharge maintenance under gas conditions that make discharge difficult than antenna modules 235 and 237 of FIGS. 10(a) and 10(b).

[0135] 10(a), (b), and (c) may have different inductances. Antenna module 235 in (a) may have a first inductance, antenna module 237 in (b) may have a second inductance, and antenna module 239 in (c) may have a third inductance. The second inductance may be greater than the first inductance, and the third inductance may be greater than the second inductance.

[0136] Fig. 11 is a diagram for explaining the operation at the resonant frequency of the antenna module illustrated in Fig. 10. Below, voltage distribution at the resonant frequency of the antenna module illustrated in (c) of Fig. 10 will be described with reference to Fig. 11.

[0137] Referring to FIG. 11, an antenna module according to one embodiment may include a plurality of unit coils 239b, interlayer capacitors 239a arranged between the plurality of unit coils, and terminal capacitors 239c (not shown) connected to the unit coils located at the upper and lower ends, respectively.

[0138] The antenna module can resonate at a second frequency determined by the capacitance of the interlayer capacitor 239a, the inductance of the unit coil 239b, and the capacitance of the terminal capacitor 239c.

[0139] In order to minimize the voltage applied to unit coil 239b, the capacitance of end capacitor 239c can be determined to be twice the capacitance of interlayer capacitor 239a. At this time, the antenna module can resonate at a second frequency determined by the capacitance C2 of interlayer capacitor 239a, the inductance L2 of unit coil 239b, and the capacitance 2*C2 of end capacitor 239c. Referring to Figure 11, interlayer capacitor 239a can be represented as a pair of virtual capacitors connected in series, each having a capacitance of 2*C2.

[0140] In a resonant state, the interlayer capacitors 239a and the terminal capacitors 239c can reduce the voltage applied to the terminals of the unit coil 239b. When power is provided to the antenna module at the second frequency, the interlayer capacitors 239a and the terminal capacitors 239c can induce a voltage drop opposite to that of the induction coil 239b so that the magnitude of the voltage Vb induced across the induction coil 239b is minimized.

[0141] The interlayer capacitor 239a and the terminal capacitor 239c can cancel the reactance of the induction coil 239b. The plasma generating device can perform impedance matching by supplying power to the antenna module at a second frequency so that the reactance of the induction coil 239b is canceled by the interlayer capacitor 239a and the terminal capacitor 239c. The terminal capacitor 239c can be arranged symmetrically with respect to the induction coil 239b to reduce the voltage applied to both ends of the induction coil 239b. The interlayer capacitor 239a can be arranged between each layer of the induction coil 239b to minimize the interlayer voltage difference between the unit induction coils 239b and prevent capacitive coupling.

[0142] As the reactance of the induction coil 239b is cancelled out by the interlayer capacitor 239a and / or the terminal capacitor 239c, the voltages in the unit coils 239b can have a corresponding relationship. For example, in a resonant state, the voltage between one end and the other end of one unit coil 239b can correspond to the voltage between one end and the other end of another unit coil 239b. The potential at one end of one unit coil 239b can correspond to the potential at one end of another unit coil 239b.

[0143] As a specific example, the antenna module may include a first unit coil (or unit turn) having one end and the other end, a first interlayer capacitor connected in series with the other end of the first unit coil, and a second unit coil having one end and the other end, the one end of which is connected in series with the first interlayer capacitor. When the antenna module is in a resonant state, the potential at one end of the first unit coil may correspond to the potential at one end of the second unit coil. When the antenna module is in a resonant state, the voltage between one end and the other end of the first unit coil may correspond to the potential between one end and the other end of the second unit coil. When the antenna module is in a resonant state, the voltage between one end and the other end of the first unit coil may correspond to the voltage between one end of the first unit coil and the other end of the second unit coil.

[0144] Fig. 12 is a diagram for explaining the structure of the antenna module illustrated in Fig. 10(c). The antenna module according to one embodiment can include a plurality of unit coils 239b and an interlayer capacitor 239c disposed between the plurality of unit coils. Fig. 12 shows a unit coil 239b of the antenna module according to one embodiment.

[0145] The unit coil 239b may include a plurality of turns TU1, TU2, and TU3. The unit coil 239b may include a first end TE1, a first turn TU1 connected to the first end TE1, a first protrusion PR1 connected to the first turn TU1, a second turn TU2 connected to the first protrusion PR1, a second protrusion PR2 connected to the second turn TU2, a third turn TU3 connected to the second protrusion PR2, and a second end TE2 connected to the third turn TU3.

[0146] The unit coil 239b may have an open portion that is open in one direction (the x-axis direction in FIG. 12). The first end TE1 and the second end TE2 of the unit coil 239b may form an open portion that is open in one direction.

[0147] Each turn TU1, TU2, and TU3 may be arranged on the same plane. Each turn TU1, TU2, and TU3 may have a predetermined central angle. The central angle of each turn may be 270 degrees or more. Each turn TU1, TU2, and TU3 may be arranged to have the same central axis and may have different radii.

[0148] Each of the protrusions PR1 and PR2 may be provided in a U-shape, connecting turns of different radii. The first protrusion PR1 may connect one end of the first turn TU1 to one end of the second turn TU2.

[0149] The first end TE1 or the second end TE2 can be connected to the interlayer capacitor 239c or the end capacitor 239a. For example, the first end TE1 can be connected to the end capacitor 239a, and the second end TE2 can be connected to the interlayer capacitor 239c.

[0150] Meanwhile, the antenna module may include a plurality of unit coils 239b. The plurality of unit coils may be arranged in a rotated manner with respect to the central axis of the dielectric tube. For example, a first unit coil may be arranged with its protrusion PR facing a first direction with respect to the central axis of the dielectric tube, and a second unit coil may be arranged with its protrusion PR facing a second direction with respect to the central axis of the dielectric tube, with the first direction and the second direction forming a predetermined angle with respect to the central axis of the dielectric tube. For example, the predetermined angle may be 90 degrees.

[0151] 13 is a block diagram illustrating an RF power supply according to an embodiment. Referring to FIG. 13, an RF power supply device 1000 according to an embodiment may include an AC power source 1100, a power supply device 1200, and a load 1400.

[0152] The AC power source 1100 may be a conventional 60 Hz power source used in a home or industrial setting. The load 1400 may be an electrical or electronic device used in a home or industrial setting. The load 1400 may be a plasma generating device as described herein.

[0153] The power supply device 1200 can convert a first AC power source into a second AC power source and supply it to the load 1400. For example, the second AC power source has a driving frequency of several hundred kHz to several tens of MHz and can provide power of several kW or more. The power supply device 1200 can include a rectifier 1210, a capacitor 1220, an inverter 1230, an impedance matching circuit 1300, and a controller 1250.

[0154] The rectifier 1210 can convert the output of the AC power supply 1100 into DC power. The rectifier 1210 can supply the DC power between a ground node GND and a power supply node VP. The capacitor 1220 may be connected between the power supply node VP and the ground node GND. The capacitor 1220 can discharge the AC component transmitted to the power supply node VP to the ground node GND.

[0155] The inverter 1230 may receive DC power from a power supply node VP and a ground node GND. The inverter 1230 may receive a switching signal SW from the controller 1250. The inverter 1230 may convert the DC power into a second AC power in response to the switching signal SW. The second AC power may be supplied to the load 1400 via an impedance matching circuit 1300. The impedance matching circuit 1300 may provide impedance matching to the impedance of the load 1400.

[0156] The controller 1250 may transmit a switching signal SW to the inverter 1230. The controller 1250 may control the switching signal SW so that the inverter 1230 converts the DC power source into a second AC power source. The controller 1250 may control the switching signal SW so as to adjust the amount of power supplied from the inverter 1230 to the load 1400.

[0157] 3. Operation and control method of plasma generation device According to one embodiment of the present invention presented in this specification, it is possible to provide a plasma generation device that has a plurality of discharge modes and generates plasma discharges with different characteristics in each mode.

[0158] For example, the plasma generation device can have a first discharge mode with less energy loss and a second discharge mode for discharging gases that are more difficult to discharge. Also, for example, the plasma generation device can have a first discharge mode that is advantageous for initial discharge of plasma and a second discharge mode that is highly energy efficient and advantageous for main discharge.

[0159] The plasma generator can change the plasma discharge mode by switching between one or more antennas exhibiting different characteristics as needed. Antenna switching can be interpreted in a broader sense than physical circuit switching. For example, the plasma generator can switch between antennas by selectively applying the frequency of power transmitted to multiple antenna modules to change the antenna module that primarily operates. Alternatively, the plasma generator can switch between antennas by providing power via different power supply modules or at different drive frequencies as needed to change the discharge characteristics of the antenna modules.

[0160] According to the invention described herein, it is possible to provide a plasma generation device that can operate in a wider variety of environments and has a wider operating window. According to the invention described herein, it is possible to provide a plasma generation device that generates plasma discharge even when the impedance measured at the antenna varies under various discharge conditions (gas type, flow rate, pressure, RF power). According to the invention described herein, a plasma generation device including a single antenna module or a single power supply module can expand the discharge range that has been limited by a predetermined matching range or configuration characteristics other than the antenna.

[0161] 3.1 Single antenna 3.1.1 Plasma generation process with one antenna 14 is a diagram illustrating a plasma discharge process when the plasma generation device includes one antenna module 220 and an RF power supply device 120. The RF power supply device 120 can include one or more power supply modules. The RF power supply device 120 can include one or more power supply modules having different output frequency bands.

[0162] The mode-changing plasma discharge process for one antenna module will be described below with reference to FIG.

[0163] Referring to FIG. 14, when the plasma generating device includes one antenna module 220 and one variable frequency RF power supply 120, the discharge mode can be changed by changing the frequency of the power signal provided to the antenna module 220 using the variable frequency power supply 120.

[0164] Referring to (a) of Figure 14, when the operation mode of the plasma generating device is the first mode, the plasma generating device can transmit a power signal having a first frequency f1 to the antenna module 220 via the power supply device 120 to induce plasma discharge inside the dielectric tube.

[0165] When the plasma generating device is in a first mode of operation, the plasma generating device can form a first electric field inside the dielectric tube, which can be a vertical electric field aligned with the axial direction of the dielectric tube or an azimuthal electric field aligned with the circumferential direction of the dielectric tube.

[0166] According to an embodiment, when the operation mode of the plasma generating apparatus is the first mode, the plasma generating apparatus may form a vertical electric field E1 by transmitting a power signal having a first frequency f1 to the antenna module 220. The plasma generating apparatus may form the vertical electric field E1 through the antenna module 220 to induce capacitively coupled plasma generation inside the dielectric tube.

[0167] According to an embodiment, when the operation mode of the plasma generating device is the first mode, the plasma generating device can induce capacitively coupled plasma generation inside the dielectric tube. When the operation mode is the first mode, the plasma discharge induced inside the dielectric tube of the plasma generating device can be mainly capacitively coupled plasma discharge or discharge due to the capacitively coupled mode (E-mode).

[0168] According to one embodiment, when the operation mode of the plasma generator is the first mode, the plasma generator can form an azimuthal electric field E2 by transmitting a power signal having a first frequency f1 to the antenna module 220. The plasma generator can form the azimuthal electric field E2 through the antenna module 220 to induce inductively coupled plasma generation inside the dielectric tube. When the operation mode is the first mode, the plasma generator can form the azimuthal electric field E2 having a first intensity.

[0169] According to one embodiment, when the operation mode of the plasma generating device is the first mode, the plasma generating device can induce inductively coupled plasma generation inside the dielectric tube. When the operation mode is the first mode, the plasma discharge induced inside the dielectric tube of the plasma generating device can be mainly an inductively coupled plasma discharge or a discharge in an inductively coupled mode (H-mode).

[0170] 14(b), when the operation mode of the plasma generation device is the second mode, the power supply device 120 transmits a power signal having a second frequency f2 to the antenna module 220 to induce plasma discharge inside the dielectric tube. The second frequency f2 may be different from the first frequency f1. The second frequency f2 may differ from the first frequency f1 by a certain value or more. The second frequency f2 may be higher or lower than the first frequency f1 by a certain value (e.g., 0.2 MHz) or more.

[0171] When the operation mode of the plasma generator is the second mode, the plasma generator can transmit a power signal of a second frequency f2 to the antenna module 220 to induce an azimuthal electric field E3. The plasma generator can form the azimuthal electric field E3 via the antenna module 220 to induce an inductively coupled plasma discharge inside the dielectric tube. When the operation mode is the second mode, the plasma generator can form the azimuthal electric field E3 having a second intensity. The second intensity may be greater or less than the intensity of the azimuthal electric field E2 in the first mode.

[0172] When the operation mode of the plasma generating device is the second mode, the plasma generating device can induce an inductively coupled plasma discharge inside the dielectric tube. When the operation mode is the second mode, the plasma discharge induced inside the dielectric tube of the plasma generating device can be mainly an inductively coupled plasma discharge or a discharge in the inductively coupled mode (H-mode).

[0173] Figure 15 is a diagram illustrating the change in plasma discharge mode in relation to the current a flowing through the antenna module, the voltage b across the antenna module, the voltage c across the unit coil, and the frequency d of the power signal. In Figure 15, the current and voltage graphs indicate magnitude.

[0174] 15 will be described below based on the case where the antenna module 220 includes unit coils constituting a unit layer and interlayer capacitors arranged between the unit coils as illustrated in FIG.

[0175] Referring to FIG. 15, when the plasma generating device operates in the first mode, the power supply device 120 provides a power signal having a first frequency f1 to the antenna module 220, and a first current I1 can flow through the antenna module.

[0176] When the operation mode of the plasma generating device is the first mode, the voltage across the induction coil included in the antenna module may be a first voltage V1. When the operation mode is the first mode, the voltage across the unit coil (coil that constitutes a unit layer) that constitutes the induction coil included in the antenna module may be a third voltage V3.

[0177] Referring to FIG. 15, when the plasma generating device operates in the second mode, the power supply device 120 provides a power signal having a second frequency f2 to the antenna module 220, and a second current I2 can flow through the antenna module.

[0178] When the operation mode of the plasma generating device is the second mode, the voltage across the induction coil may be a second voltage V2. When the operation mode is the second mode, the voltage across the unit coil constituting the induction coil included in the antenna module may be a fourth voltage V4.

[0179] The second frequency f2 may be lower than the first frequency f1. When the second frequency f2 is lower than the first frequency f1, the second current I2 may be higher than the first current I1. When the second frequency f2 is lower than the first frequency f1, the second voltage V2 may be lower than the first voltage V1. When the second frequency f2 is lower than the first frequency f1, the third voltage V3 may be higher than the fourth voltage V4.

[0180] When the operating mode is the second mode, the voltage V2 across the coil of the antenna module 220 may be smaller than the voltage V1 across the coil of the antenna module in the first mode. When the operating mode is the second mode, the antenna module may have discharge characteristics with higher energy efficiency compared to the first mode.

[0181] The second frequency may be a resonant frequency of the antenna module 220. When the operation mode is changed to the second mode, the antenna module 220 may be impedance-matched and resonate at the second frequency.

[0182] Meanwhile, according to one embodiment, the plasma discharge state may change over time. The operation mode of the plasma generation device may be changed according to the change in the plasma discharge state. For example, if the plasma generation device has a first discharge mode that is advantageous for initial plasma discharge and a second discharge mode that is advantageous for main discharge with high energy efficiency, the operation mode of the plasma generation device may be changed according to the change in the plasma discharge state.

[0183] For example, plasma discharge in the first mode can be mainly achieved by the capacitive coupling mode. Then, as plasma is generated sufficiently by the capacitive coupling mode, a second electric field E2, which is an azimuthal inductive electric field, can be formed within the dielectric tube. Once the second electric field E2 is formed, plasma can be generated by inductively coupled plasma discharge or the inductively coupled mode (H-mode).

[0184] The plasma generation device can change the operation mode in response to a change in the plasma discharge state. Referring to (a) of Fig. 14, the plasma generation device transmits a power signal having a first frequency f1 to the antenna module 220 via the power supply device 120, and can change the operation mode in response to a transition of the plasma discharge state.

[0185] The plasma generating device can sense changes in the plasma discharge state.

[0186] The plasma generation device can include a sensor device that acquires the current flowing through the antenna module 220 and / or the voltage applied across the antenna module 220. The plasma generation device acquires the current flowing through the antenna module 220 and / or the voltage applied across the coil of the antenna module 220, acquires changes in the plasma discharge state, and can change the drive frequency and / or operation mode of the power supply device 120.

[0187] The plasma generating apparatus may include a sensor device that acquires a change in a voltage or current signal from the RF power supply apparatus described above in relation to Fig. 13. For example, the plasma generating apparatus may include a sensor device that acquires a voltage (voltage between VP and GND) applied across the capacitor 1220 of the power supply apparatus 1200 of Fig. 13 and / or a current (current flowing from VP to the inverter) flowing through the inverter. The plasma generating apparatus can acquire a change in the discharge state based on a change in the voltage or current signal acquired from the RF power supply apparatus described above.

[0188] As the plasma discharge state changes, the current flowing through the antenna module 220 and / or the voltage applied across the antenna module 220 can be modified. For example, as the predominant plasma discharge state changes from capacitively coupled plasma discharge to inductively coupled plasma discharge, the current flowing through the antenna module 220 and / or the voltage applied across the antenna module 220 can be reduced.

[0189] The plasma generating device may change its operating mode to a second mode in response to a reduction in the current flowing through the antenna module 220 and / or the voltage applied across the antenna module 220 .

[0190] According to one embodiment, the plasma discharge state of the plasma generating device may include a capacitive coupling mode, a transfer mode, and an inductive coupling mode. When the plasma generating device operates in a first mode, the plasma discharge state may transition from the capacitive coupling mode to the transfer mode. When the plasma discharge state transitions to the transfer mode, the operation mode of the plasma generating device may be changed from the first mode to a second mode. When the operation mode is changed to the second mode, the plasma discharge state may transition from the transfer mode to the inductive coupling mode.

[0191] Alternatively, the plasma discharge state may have a first inductively coupled mode and a second inductively coupled mode. When the operation mode of the plasma generating device is changed from the first mode to the second mode, the plasma discharge state may be changed from the first inductively coupled plasma discharge to the second inductively coupled plasma discharge.

[0192] Fig. 16 is a diagram for explaining voltage changes due to an operation mode change in a plasma generation apparatus according to an embodiment. Fig. 16 is a diagram for explaining voltage distribution depending on the position of the coil of the antenna module in the plasma generation apparatus according to an embodiment. Below, with reference to Figs. 14 to 16, the voltage changes at both ends of the antenna module and at both ends of the unit coil due to an operation mode change will be described.

[0193] The voltage distribution illustrated in Figure 16 will be explained based on an antenna module that includes four unit induction coils each arranged on a different plane and interlayer capacitors arranged between each induction coil, such as the antenna module illustrated in (c) of Figure 10.

[0194] 16(a) is a diagram for explaining voltage distribution depending on the position of the antenna module according to an embodiment when the plasma generation device according to an embodiment is in the first mode. When the operation mode is the first mode, the plasma generation device can use the first frequency as the drive frequency.

[0195] Referring to FIG. 16(a), when the operation mode of the plasma generation apparatus according to an embodiment is the first mode, the voltage across the antenna module having a total length Lt may be a first voltage V1. When the operation mode is the first mode, the reactance cancellation of the induction coil due to the interlayer capacitor between the unit coils can be minimized. When the operation mode is the first mode, the plasma generation apparatus can be operated at a driving frequency of a first frequency so that the reactance cancellation is minimized, the voltage across the induction coil is maximized, and a capacitively coupled plasma discharge is induced. Preferably, the voltage across each unit coil constituting the antenna module having a total length Lt may be a value obtained by dividing the voltage across the antenna module by the number of unit coils.

[0196] However, the influence of the reactance of the interlayer capacitor may not be completely eliminated. In other words, although Fig. 16 shows the voltage rise (or drop) in the induction coil as occurring continuously for convenience, the reactance of the induction coil can be at least partially offset by the interlayer capacitor between the unit coils. That is, the voltage distribution in the first mode may appear similar to Fig. 16(b).

[0197] FIG. 16(b) is a diagram for explaining voltage distribution according to the position of the antenna module when the plasma generation device according to one embodiment is driven at a frequency between the first frequency and the second frequency.

[0198] 16(b), when the plasma generating device is in a transition state between the first mode and the second mode, or when the plasma generating device has a driving frequency between the first frequency and the second frequency, the voltage across the antenna module with the total length Lt may be smaller than the first voltage V1. In the transition state, the reactance of the induction coil is at least partially offset by the interlayer capacitor between the unit coils, and the voltage across the antenna module may be smaller than the first voltage V1.

[0199] When the operation mode is the first mode, reactance cancellation of the induction coil due to the interlayer capacitor between the unit coils can be minimized. When the operation mode is the first mode, the plasma generating device can be operated at a driving frequency of a first frequency so that reactance cancellation is minimized, the voltage across the induction coil is maximized, and a capacitively coupled plasma discharge is induced.

[0200] 16(c) is a diagram illustrating a voltage distribution according to the position of the induction coil when the plasma generation apparatus according to an embodiment is in the second mode. When the operation mode is the second mode, the driving frequency is the second frequency, and the antenna module may be in a resonant state where the impedance is matched at the second frequency. According to an embodiment, the plasma generation apparatus may change the operation mode to the second mode in response to the plasma discharge state changing to the transition mode.

[0201] 16(c), when the operation mode of the plasma generation apparatus according to the embodiment is the second mode, the voltage across the antenna module having the total length Lt may be a second voltage V2. The second voltage V2 may be smaller than the first voltage V1.

[0202] When the operating mode of the plasma generating device is the second mode, the interlayer capacitor of the antenna module can offset the voltage rise (or drop) across the antenna module. When the operating mode is the second mode, the voltage across the induction coil can be minimized. When the operating mode is the second mode, the interlayer capacitor and the terminal capacitor that constitute the antenna module can offset the reactance of the induction coil. When the operating mode is the second mode, the plasma generating device can operate at a drive frequency that is the second frequency so that the voltage across the induction coil is maximized and an inductively coupled plasma discharge is induced.

[0203] Referring to (c) of Figure 16, when the operation mode of the plasma generation device according to one embodiment is the second mode, the voltage across the antenna module with a total length Lt may be a second voltage V2. Preferably, the voltage across the unit coils constituting the antenna module may be the same as the voltage across the antenna module, the second voltage V2. However, due to the characteristics of the plasma generation device and limitations in the power supply frequency resolution, it may be difficult to achieve a perfect resonance state. In this case, the voltage distribution in the second mode may exhibit a sawtooth shape in which the reactance of the induction coil rises (or falls) without being at least partially canceled out.

[0204] Meanwhile, in the above embodiment, the operation mode is changed to the second mode in response to the transfer of plasma from the first mode, but the operation mode may be changed in the reverse order. The plasma generating apparatus may also change the operation mode from the second mode described in relation to Figure 14(b) to the first mode described in relation to Figure 14(a).

[0205] 3.1.2 Two inverters with one antenna The plasma generation device according to one embodiment may include one antenna module and one or more RF power supply modules. Unless otherwise specified, the plasma generation device described below may operate in the same manner as the above-described embodiment.

[0206] An RF power module can be an AC power source with a predetermined output frequency range and matching range. Different RF power modules can have different output frequency ranges and matching ranges.

[0207] 17A and 17B are diagrams for explaining a plasma generation apparatus according to an embodiment. Referring to (a) and (b) of Fig. 17A, the plasma generation apparatus according to an embodiment can include a first power supply module 101, a second power supply module 102, and an antenna module 201.

[0208] The first power supply module 101 may have a first driving frequency range. The second power supply module 102 may have a second driving frequency range that is at least partially different from the first driving frequency range. The first power supply module 101 may be driven at a first frequency within the first driving frequency range. The second power supply module 102 may be driven at a second frequency within the second driving frequency range.

[0209] According to one embodiment, the first power module 101 may include a first matching element. The second power module 102 may include a second matching element having a different impedance from the first matching element. Each matching element may improve the power transfer efficiency of each power module to the antenna module. Each matching element may also function as a filter in a frequency band other than the resonant frequency.

[0210] 18 is a diagram for explaining a plasma generation apparatus according to an embodiment. Referring to FIG. 18, the plasma generation apparatus according to the embodiment may include a first power supply module 101 including a first power supply unit P1 and a first matching element Z1, a second power supply module 102 including a second power supply unit P2 and a second matching element Z2, and an antenna module 201.

[0211] The first power supply module 101 includes a first matching element, and the first matching element and the antenna module 201 can resonate at a first frequency within a first driving frequency range. The first matching element and the antenna module 201 can resonate at the first frequency determined by the impedance of the first matching element and the impedance of the antenna module 201.

[0212] The second power supply module 102 includes a second matching element, and the second matching element and the antenna module 201 can resonate at a first frequency within a first driving frequency range. The second matching element and the antenna module 201 can resonate at a second frequency determined by the impedance of the second matching element and the impedance of the antenna module 201.

[0213] 18, the plasma generation apparatus may further include an isolation element 130. The isolation element 130 may block signal transmission and reception between a circuit on the second power supply module 102 side and a circuit on the first power supply module 101 side when the first power supply module 101 is operating. The isolation element 130 may include a transformer. The isolation element 130 may include an isolation transformer such as a shielding transformer, an insulating transformer, or an interference blocking transformer. The isolation element 130 may include a switch.

[0214] Meanwhile, according to another embodiment, the antenna module 201 or the plasma generation apparatus including the antenna module 201 may include a first matching element and a second matching element. The first matching element may be connected between the first power supply module 101 and the antenna module 201, and the second matching element may be connected between the second power supply module 102 and the antenna module 201. That is, although the above embodiment has been described based on the case where the matching element is included in the power supply module, the plasma generation system may be configured such that the plasma generation apparatus or the antenna module includes one or more matching elements, and each matching element is connected to the antenna module and the power supply module.

[0215] A method for controlling a plasma generation device according to an embodiment includes the steps of controlling the plasma generation device to a first mode via a first power supply module and controlling the plasma generation device to a second mode via a second power supply module. The above-mentioned contents can be applied to the first mode and the second mode.

[0216] FIG. 19 is a diagram for explaining a method for controlling a plasma generation apparatus according to an embodiment.

[0217] Referring to FIG. 19, a method for controlling a plasma generation apparatus according to one embodiment may include step S110 of providing power at a first frequency to an antenna module via a first power supply module, and step S130 of providing power at a second frequency to the antenna module via a second power supply module.

[0218] The step S110 of providing power at a first frequency to the antenna module via a first power supply module may include providing power to the antenna module at the first frequency, which is a resonant frequency determined by the impedance of a first matching element disposed between the first power supply module and the antenna module and the impedance of the antenna module. At this time, the power distribution of the antenna module may appear as illustrated in connection with (a) of FIG.

[0219] Alternatively, step S110 of providing power at a first frequency to the antenna module via the first power supply module may include providing a power signal to the antenna module at a first frequency different from a resonant frequency determined by the impedance of the antenna module, whereby the power distribution of the antenna module may appear as illustrated in connection with FIG. 16(a) or 16(b).

[0220] Step S110 of providing power at a first frequency to the antenna module via a first power supply module may include providing a power signal at the first frequency to the antenna module via the first power supply module to induce a capacitively coupled plasma discharge inside the dielectric tube.

[0221] Alternatively, step S110 of providing power at a first frequency to the antenna module via a first power supply module may include providing a power signal at the first frequency to the antenna module via the first power supply module to induce an inductively coupled plasma discharge via an induced electric field having a first strength inside the dielectric tube.

[0222] The step S130 of providing power at a second frequency to the antenna module via a second power supply module may include providing a power signal to the antenna module at a second frequency that is a resonant frequency determined by the impedance of a second matching element disposed between the second power supply module and the antenna module and the impedance of the antenna module, whereby the voltage distribution of the antenna module may appear as illustrated in connection with (c) of FIG.

[0223] Step S130 of providing power at a second frequency to the antenna module via the second power module may include providing a power signal at the second frequency to the antenna module via the second power module to induce an inductively coupled plasma discharge inside the dielectric tube. Step S130 of providing a power signal at the second frequency to the antenna module via the second power module may include forming an inductive electric field having a second strength inside the dielectric tube to induce an inductively coupled plasma discharge. The second strength may be greater or less than the first strength of the electric field induced by the first power module.

[0224] According to one embodiment, the method for controlling a plasma generation device may further include acquiring a change in a power signal. The method for controlling a plasma device may include acquiring a change in a current flowing through the antenna module or a change in a voltage across the antenna module (or some elements constituting the antenna module). The method for controlling a plasma device may include acquiring the change and controlling the first power supply module and / or the second power supply module based on the change. The method for controlling a plasma device may include acquiring the change and suspending operation of the first power supply module and starting operation of the second power supply module based on the change. Alternatively, the method for controlling a plasma device may include acquiring the change and suspending operation of the second power supply module and starting operation of the first power supply module based on the change.

[0225] 3.1.3 One antenna and one inverter The plasma generation apparatus according to one embodiment may include one antenna module and one variable frequency RF power supply module. Unless otherwise specified, the plasma generation apparatus described below can operate in the same manner as the above-described embodiment.

[0226] 20A and 20B are diagrams for explaining a plasma generation apparatus according to an embodiment. Referring to (a) and (b) of FIG. 20, the plasma generation apparatus according to an embodiment can include a power supply module 103 and an antenna module 202.

[0227] The RF power supply module 101 may be an AC power source having a predetermined frequency variable range, and may provide power to the antenna module 202 using the resonant frequency of the antenna module 202 as a driving frequency.

[0228] A method for controlling a plasma generation device according to an embodiment includes the steps of controlling the plasma generation device to a first mode via a power supply module and controlling the plasma generation device to a second mode via the power supply module. The above-described content can be applied to the first mode and the second mode.

[0229] FIG. 21 is a diagram for explaining a method for controlling a plasma generation apparatus according to an embodiment.

[0230] 21, a method for controlling a plasma generating apparatus according to an embodiment may include step S210 of providing power at a first frequency to an antenna module via a power supply module, and step S230 of providing power at a second frequency to the antenna module via the power supply module, where the second frequency may be a resonant frequency of the antenna module.

[0231] The step S210 of providing power at a first frequency to the antenna module via the power supply module may include providing a power signal to the antenna module at a first frequency different from a resonant frequency determined by the impedance of the antenna module, whereby the voltage distribution of the antenna module may appear as illustrated in connection with (a) of FIG.

[0232] Step S210 of providing power at a first frequency to the antenna module via the power supply module may include providing a power signal at the first frequency to the antenna module via the power supply module to induce a capacitively coupled plasma discharge inside the dielectric tube.

[0233] The step S230 of providing power at a second frequency to the antenna module via the power supply module may include providing a power signal to the antenna module at the second frequency, which is a resonant frequency determined by the impedance of the antenna module, whereby the voltage distribution of the antenna module may appear as illustrated in connection with (c) (or (b)) of FIG.

[0234] The step S230 of providing power at a second frequency to the antenna module via the power supply module may include providing a power signal at the second frequency to the antenna module via the power supply module to induce an inductively coupled plasma discharge inside the dielectric tube.

[0235] According to an embodiment, the method for controlling the plasma generating device may further include a step of acquiring a change in the power signal. The method for controlling the plasma generating device may include acquiring a change in the current flowing through the antenna module or a change in the voltage across the antenna module (or a part of the elements constituting the antenna module), and changing the drive frequency of the power supply module based on the change.

[0236] 3.1.4 Example of plasma generation device According to one embodiment, it is possible to provide a plasma generation device that has a plurality of operation modes including a first mode and a second mode and that performs plasma discharge. The plasma generation device can include a first power supply device that can change the frequency within a first frequency range, a second power supply device that can change the frequency within a second frequency range that is at least partially different from the first frequency range, a dielectric tube, and an antenna module that includes a first unit coil wound at least once around the dielectric tube, a second unit coil wound at least once around the dielectric tube, and a first capacitor connected in series between the first unit coil and the second unit coil.

[0237] In the plasma generating device, when the operation mode is a first mode, the antenna module can induce a first plasma discharge based on a power signal having a first frequency within a first frequency range, and when the operation mode is a second mode, the antenna module can induce a second plasma discharge based on a power signal having a second frequency within a second frequency range, wherein the first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency can correspond to a first resonant frequency determined by the first inductance and the first capacitance.

[0238] The first power supply may include a first matching element having a first impedance. When the operating mode is the first mode, the antenna module generates a first plasma discharge based on a power signal having a first frequency, and the first frequency may correspond to a first resonant frequency determined based on the first impedance, the first inductance, and the first capacitance.

[0239] The second power supply may include a second matching element having a second impedance. When the operating mode is the second mode, the antenna module generates a second plasma discharge based on the power signal having a second frequency, the second frequency being determined based on the second impedance, the first inductance, and the first capacitance and corresponding to a second resonant frequency different from the first resonant frequency.

[0240] The second resonant frequency may be higher than the first resonant frequency. In this case, when the operation mode is the first mode, a first voltage, which is a voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor, may be lower than a second voltage, which is a voltage between one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor, when the operation mode is the second mode.

[0241] When the operating mode is the first mode, the voltage across the first unit coil may correspond to the voltage across one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0242] The voltage across the antenna module when the operation mode is in the first mode may be less than the voltage across the antenna module when the operation mode is in the second mode.

[0243] The magnitude of the first current flowing through the antenna module when the operation mode is the first mode may be smaller than the magnitude of the second current flowing through the antenna module when the operation mode is the second mode.

[0244] When the operation mode is a first mode, the power consumed by the antenna module may be a first power, and when the operation mode is a second mode, the power consumed by the antenna module may be a second power that is smaller than the first power.

[0245] According to one embodiment, a method for controlling a plasma generation device can be provided, which includes a first power supply device capable of changing the frequency within a first frequency range, a second power supply device capable of changing the frequency within a second frequency range that is at least partially different from the first frequency range, a dielectric tube, a first unit coil wound at least once around the dielectric tube, a second unit coil wound at least once around the dielectric tube, and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil.

[0246] A method for controlling a plasma generation device includes the steps of: operating in a first mode to provide RF power to an antenna module at a first frequency as a drive frequency; and operating in a second mode to provide RF power to an antenna module at a second frequency as a drive frequency. The first and second unit coils have a first inductance, the first capacitor has a first capacitance, and the second frequency can correspond to a second resonant frequency determined by the first inductance and the first capacitance.

[0247] The second power supply may include a second matching element having a second impedance, and the step of operating in the second mode may include operating at a second frequency corresponding to a second resonant frequency determined based on the first inductance, the first capacitance, and the second impedance.

[0248] The first power supply may include a first matching element having a first impedance, and the step of operating in the first mode may include operating at a first frequency corresponding to a first resonant frequency determined based on the first inductance, the first capacitance, and the first impedance.

[0249] When the operation mode is a first mode, the power consumed by the antenna module may be a first power, and when the operation mode is a second mode, the power consumed by the antenna module may be a second power greater than the first power.

[0250] When the operating mode is the first mode, the voltage across the first unit coil may correspond to the voltage across one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0251] The magnitude of the first current flowing through the antenna module when the operation mode is the first mode may be smaller than the magnitude of the second current flowing through the antenna module when the operation mode is the second mode.

[0252] On the other hand, the control method for a plasma generating apparatus may further include a step of acquiring the current flowing through the antenna module when the operating mode is the first mode, and a step of changing the operating mode to the second mode when the current flowing through the antenna module is equal to or less than a reference value.

[0253] The method for controlling the plasma generation device may further include the steps of: acquiring a current flowing through an inverter of the first power supply device when the operation mode is the first mode; and changing the operation mode to the second mode when the current flowing through the inverter of the first power supply device is equal to or less than a reference value.

[0254] According to another embodiment, it is possible to provide a plasma generation device that generates plasma by supplying power from a first power supply device that can change the frequency within a first frequency range when the operation mode is a first mode, and by supplying power from a second power supply device that can change the frequency within a second frequency range that is at least partially different from the first frequency range when the operation mode is a second mode.

[0255] The plasma generating device may include a dielectric tube, a first unit coil wound around the dielectric tube at least once, a second unit coil wound around the dielectric tube at least once, and an antenna module including a first capacitor connected in series between the first unit coil and the second unit coil.

[0256] When the operating mode is the first mode, the antenna module can induce a first plasma discharge based on a power signal having a first frequency within a first frequency range.

[0257] When the operating mode is the second mode, the antenna module can induce a second plasma discharge based on a power signal having a second frequency within the second frequency range.

[0258] The first unit coil and the second unit coil have a first inductance, the first capacitor has a first capacitance, and the first frequency can correspond to a first resonant frequency determined based on the first inductance and the first capacitance.

[0259] The voltage across the antenna module when the operation mode is in the first mode may be less than the voltage across the antenna module when the operation mode is in the second mode.

[0260] When the operating mode is the first mode, the voltage across the first unit coil may correspond to the voltage across one end of the first unit coil that is not connected to the first capacitor and one end of the second unit coil that is not connected to the first capacitor.

[0261] As described in the above embodiments, the discharge characteristics of the antenna module can be changed by changing the operating mode by changing the driving frequency of the power applied to the antenna module. By providing various discharge characteristics through a single antenna module, it is possible to provide a plasma generation device that has a wider matching range, exhibits various energy efficiencies, and is capable of maintaining discharge in various environments.

[0262] On the other hand, when one antenna module is used, the discharge characteristics that can be exhibited may be limited due to limitations of the physical structure of the antenna module. Therefore, a plasma generation device including two or more antenna modules can be provided. The following describes a plasma generation device including two or more antenna modules and its operation.

[0263] 3.2 Two Antennas 3.2.1 Plasma generation process with two antennas According to an embodiment, a plasma generating apparatus may include two or more antenna modules. The plasma generating apparatus may include a plurality of antenna modules each having different discharge characteristics. The two or more antenna modules may have different impedances. The plasma generating apparatus may be configured to change the active antenna module as needed. The active antenna module refers to the antenna module that mainly consumes power. The two or more antenna modules may be connected in parallel to a variable frequency power supply.

[0264] The two or more antenna modules can operate differently depending on the driving frequency of the plasma generation device. For example, when the driving frequency of the plasma generation device is a first frequency corresponding to the resonant frequency of the first antenna module, the first antenna module operates in a resonant state where reactance is canceled, and the second antenna module operates in a non-resonant state. For example, when the driving frequency of the plasma generation device is the first frequency corresponding to the resonant frequency of the first antenna module, current flow into the second antenna module, which has an impedance different from that of the first antenna module, can be suppressed. When the driving frequency is a second frequency corresponding to the resonant frequency of the second antenna module, current flow into the first antenna module, which has an impedance different from that of the second antenna module, can be suppressed. Furthermore, when the driving frequency is a third frequency different from the resonant frequencies of the first and second antenna modules, both the first and second antenna modules can operate in a non-resonant state. The antenna modules can induce capacitively coupled plasma discharge in a non-resonant state and induce inductively coupled plasma discharge in a resonant operating state.

[0265] The plasma generating device described in this specification can change the discharge characteristics by controlling the drive frequency and selectively switching the active antenna module, as in the example described above.

[0266] The two or more antenna modules may each have a different structure. For example, one antenna module may include a solenoid coil wound continuously multiple times around a dielectric tube and a terminal capacitor connected to both ends of the solenoid coil, as illustrated in FIG. 8. Another antenna module may include a plurality of unit coils and interlayer capacitors disposed between the unit coils, as illustrated in FIG. 10. For example, one antenna module may include a plurality of unit coils, each with a first turn per layer, forming a first layer, interlayer capacitors disposed between the unit coils, and a terminal capacitor, while another antenna module may include a plurality of unit coils, each with a second interlayer turn, forming a second layer, interlayer capacitors, and a terminal capacitor.

[0267] Although the following description will be made based on a case where there are two antenna modules for convenience, the plasma generator may include two or more antenna modules. The plasma generator may include two or more antenna modules each having different impedance, structure, and / or function, and may be provided to change the active antenna as needed. The variable frequency power supply may include one or more power supply modules.

[0268] According to the invention described in this specification, it is possible to provide a plasma generation device that includes an antenna module having discharge characteristics that are advantageous for initial discharge, an antenna module having discharge characteristics that are suitable for maintaining discharge, and / or an antenna module having discharge characteristics with little energy loss, and that is configured to enable mode changes by switching the antenna as needed.

[0269] As described herein, a plasma generation device including multiple antenna modules, each configured to operate selectively, may enable matching to a wider range of impedance or real resistance. Furthermore, by utilizing multiple antenna modules each having a different discharge control range (e.g., flow rate, power, pressure, type of gas), a plasma generation device having a wider discharge control range can be provided.

[0270] 3.2.1.1 First Example 22 is a diagram illustrating a plasma discharge process when the plasma generation device includes a first antenna module 203, a second antenna module 204, and an RF power supply device 102. The RF power supply device 102 can include one or more power supply modules. The RF power supply device 102 can include one or more power supply modules having different output frequency bands.

[0271] 23 and 24 are schematic circuit diagrams for explaining the change of the operation mode of the plasma generating device.

[0272] The mode change plasma discharge process when there are two or more antenna modules will be described below with reference to FIGS.

[0273] Referring to FIG. 22, when the plasma generating device includes a first antenna module 203, a second antenna module 204, and an RF power supply device 102, the plasma generating device can change the active antenna module by changing the driving frequency of the power supply device 102.

[0274] 22(a), when the operation mode of the plasma generating device is the first mode, the plasma generating device can induce plasma discharge inside the dielectric tube by transmitting a power signal having a first frequency f1 to the first antenna module 203 and the second antenna module 204 via the power supply device 102. The first frequency f1 can be a driving frequency that causes the first antenna module 203 to operate as a driven antenna module.

[0275] When the plasma generating device is in a first operating mode, it can form a first electric field E1 inside the dielectric tube. The first electric field E1 can be a vertical electric field E1 aligned with the axial direction of the dielectric tube. When the plasma generating device is in the first operating mode, it can also form an azimuthal electric field E2 inside the dielectric tube aligned with the circumferential direction of the dielectric tube.

[0276] According to one embodiment, when the operation mode of the plasma generating device is the first mode, the plasma generating device transmits a power signal having a first frequency f1 to the first antenna module 203 and the second antenna module 204 to form a vertical electric field E1, thereby inducing capacitively coupled plasma generation inside the dielectric tube.

[0277] According to one embodiment, when the operation mode of the plasma generating device is the first mode, the plasma generating device can generate an azimuthal electric field E2 by transmitting a power signal having a first frequency f1 to the first antenna module 203 and the second antenna module 204, thereby inducing inductively coupled plasma generation inside the dielectric tube. When the operation mode of the plasma generating device is the first mode, the plasma generating device can generate an azimuthal electric field E2 having a first intensity.

[0278] Fig. 23 is a diagram for explaining the operation of the plasma generation device shown in Fig. 22(a). Referring to Fig. 23, when the operation mode of the plasma generation device is the first mode, the plasma generation device can output a first current I1 having a second frequency f2 to the first antenna module 203 and the second antenna module 204 via a variable frequency RF power supply.

[0279] When the operation mode of the plasma generation apparatus is the first mode, the a1 current Ia1 may be distributed to the first antenna module 203, and the b1 current Ib1 may be distributed to the second antenna module 204. The a1 current Ia1 may be greater than the b1 current Ib1. When the operation mode is the first mode, the first frequency f1, which is the driving frequency, corresponds to the resonant frequency of the first antenna module 203, and the reactance of the first antenna module 203 may be mostly canceled out, while the reactance of the second antenna module 204 may be relatively little canceled out. Most of the current may be distributed to the first antenna module 203. When the operation mode of the plasma generation apparatus is the first mode, the first power consumed by the first antenna module 203 may be greater than the second power consumed by the second antenna module 204. When the operation mode of the plasma generation apparatus is the first mode, the first antenna module 203 may generate an inductively coupled plasma discharge in the dielectric tube, and the generated plasma may be inductively coupled to the inductor of the first antenna module 203.

[0280] 22(b), when the operation mode of the plasma generation device is the second mode, the power supply device 102 can provide power to the first antenna module 203 and the second antenna module 204 using a second frequency f2 as a drive frequency. The second frequency f2 may be different from the first frequency f1. The second frequency f2 may differ from the first frequency f1 by a certain value or more. The second frequency f2 may be higher or lower than the first frequency f1 by a certain value (e.g., 0.2 MHz) or more.

[0281] When the plasma generating device is in the second operating mode, it transmits a power signal of a second frequency f2 to the first antenna module 203 and the second antenna module 204 to induce an azimuthal electric field E3 and induce an inductively coupled plasma discharge inside the dielectric tube. When the plasma generating device is in the second operating mode, it can form an azimuthal electric field E3 having a second intensity. The second intensity may be greater or less than the intensity of the azimuthal electric field E2 in the first mode.

[0282] Fig. 24 is a diagram for explaining the operation of the plasma generation device shown in Fig. 22(b). Referring to Fig. 24, when the operation mode of the plasma generation device is the second mode, the plasma generation device can output a second current I2 having a second frequency f2 to the first antenna module 203 and the second antenna module 204 via the variable frequency RF power supply.

[0283] When the operation mode of the plasma generation apparatus is the second mode, the a2 current Ia2 may be distributed to the first antenna module 203, and the b2 current Ib2 may be distributed to the second antenna module 204. The a2 current Ia2 may be smaller than the b2 current Ib2. According to one embodiment, when the operation mode is the second mode, the second frequency f2, which is the driving frequency, corresponds to the resonant frequency of the second antenna module 204, and the reactance of the second antenna module 204 may be mostly canceled, while the reactance of the first antenna module 203 may be relatively little canceled. Most of the current may be distributed to the second antenna module 204. When the operation mode of the plasma generation apparatus is the second mode, the second power consumed by the second antenna module 204 may be greater than the first power consumed by the first antenna module 203. When the operation mode of the plasma generation apparatus is the second mode, the second antenna module 204 may generate an inductively coupled plasma discharge in the dielectric tube, and the generated plasma may be inductively coupled with the inductor of the second antenna module 204.

[0284] Fig. 25 is a diagram illustrating the changes in voltage and current depending on the operation mode of the plasma generation device. Fig. 25 is a diagram illustrating the current a flowing through the first antenna module, the voltage b across the induction coil of the first antenna module, the current c flowing through the second antenna module, the voltage d across the induction coil of the second antenna module, and the frequency e over time. In Fig. 25, the current and voltage graphs indicate magnitude.

[0285] 25(e), when the operation mode of the plasma generation apparatus is the first mode, the power supply device 102 can provide a power signal having a first frequency f1 to the first antenna module 203 and the second antenna module 204. At this time, referring to (a) and (c) of FIG. 25, an a1 current Ia1 can flow through the first antenna module 203, and a b1 current Ib1 smaller than the a1 current Ia1 can flow through the second antenna module 204. Referring to (b) and (d) of FIG. 25, when the operation mode of the plasma generation apparatus is the first mode, the voltage across the induction coil of the first antenna module 203 can be an a1 voltage Va1, and the voltage across the induction coil of the second antenna module 204 can be a b1 voltage Vb1 smaller than the a1 voltage Va1.

[0286] Referring to (e) of FIG. 25, when the operation mode of the plasma generation apparatus is the second mode, the power supply device 102 can provide a power signal having a second frequency f2 to the first antenna module 203 and the second antenna module 204. Referring to (a) and (c) of FIG. 25, in the second mode, an a2 current Ia2 smaller than the a1 current Ia1 can flow through the first antenna module 203, and a b2 current Ib2 larger than the b1 current Ib1 can flow through the second antenna module 204. The b2 current Ib2 can be larger than the a1 current Ia1. Referring to (b) and (d) of FIG. 25, when the operation mode of the plasma generation apparatus is the second mode, the voltage across the induction coil of the first antenna module 203 can be an a2 voltage Va2 smaller than the a1 voltage Va1, and the voltage across the induction coil of the second antenna module 204 can be a b2 voltage Vb2 larger than the b1 voltage Vb1. The b2nd voltage Vb2 may be greater than the a2nd voltage Va2.

[0287] Fig. 26 is a diagram for explaining voltage drops in each antenna module of a plasma generation device according to an embodiment. Below, voltage distribution according to the position of the induction coil constituting the driven antenna module in each operation mode will be explained with reference to Fig. 24.

[0288] When the plasma generating device is in the first mode in which the driving frequency is the first frequency corresponding to the resonant frequency of the first antenna module 203, as described above, most of the power supplied by the power supply is consumed by the first antenna module 203, and the first antenna module 203 can operate as a driven antenna module.

[0289] (a) of Figure 26 schematically shows the voltage Vm1 depending on the position of the induction coil of the first antenna module 203 in the first mode when the first antenna module 203 is configured to include unit coils (three unit coils in the example of Figure 26(a)) that constitute a unit layer as illustrated in Figure 10 and interlayer capacitors arranged between the unit coils.

[0290] When the operation mode is the first mode, the first antenna module 203 may be in a resonant state. When the operation mode is the first mode, reactance cancellation of the induction coil by the interlayer capacitor between the unit coils of the first antenna module 203 is maximized, and a first inductively coupled plasma discharge can be induced.

[0291] 26(a), the voltage across the antenna module having a total length L13 may be a first voltage V1. Preferably, the voltage across each unit coil constituting the antenna module (from the origin to point L11, from point L11 to point L12, and from point L12 to point L13) may be substantially the same as the first voltage V1.

[0292] FIG. 26(b) is a diagram for explaining the voltage distribution according to the position of the second antenna module 204 when the plasma generation apparatus according to an embodiment is in the second mode in which the second frequency is used as the drive frequency.

[0293] When the plasma generating device is in the second mode in which the driving frequency is the second frequency corresponding to the resonant frequency of the second antenna module 204, most of the power supplied by the power supply is consumed by the second antenna module 204 as described above, and the second antenna module 204 can operate as a driven antenna module.

[0294] (b) of Figure 26 schematically shows the voltage Vm2 depending on the position of the induction coil of the second antenna module 204 in the second mode when the first antenna module 204 is configured to include unit coils (four unit coils in the example of Figure 26(b)) that form a unit layer as illustrated in Figure 10 and interlayer capacitors arranged between the unit coils.

[0295] When the operating mode is the second mode, the second antenna module 204 may be in a resonant state. When the operating mode is the second mode, reactance cancellation of the inductive coils by the interlayer capacitors between the unit coils of the second antenna module 204 is maximized, and a second inductively coupled plasma discharge may be induced. The second inductively coupled plasma discharge may have higher energy efficiency characteristics than the first inductively coupled plasma discharge.

[0296] 26(b), the voltage across the antenna module having a total length L24 may be a second voltage V2. Preferably, the voltage across each of the unit coils constituting the antenna module (from the origin to point L21, from L21 to point L22, from point L22 to point L23, and from point 23 to point 24) may be substantially the same as the second voltage V2.

[0297] On the other hand, when the operation mode is the first mode, it is possible to substantially block the inflow of current to the second antenna module 204. Therefore, when the operation mode is the first mode, the voltage across the inductive element constituting the second antenna module 204 can be converged to a very small value. Also, when the operation mode is the second mode, it is possible to substantially block the inflow of current to the first antenna module 204. Therefore, when the operation mode is the second mode, the voltage across the inductive element constituting the first antenna module 203 can be converged to a very small value.

[0298] According to one embodiment, the first antenna module 203 may be an antenna module including a solenoid coil wound multiple times without an interlayer capacitor, as illustrated in Figure 8. If the first antenna module 203 does not include an interlayer capacitor, the voltage across the induction coil of the first antenna module 203 may be a first voltage (maximum value) when the driving frequency is a first frequency, and may be a second voltage smaller than the first voltage when the driving frequency is a second frequency.

[0299] In the above embodiment, the mode change process is described in which the operation mode of the plasma generation device is changed from the first mode to the second mode and the driving frequency is reduced. However, this is merely an example, and the mode change form can be changed as needed. For example, the operation mode of the plasma generation device can be changed from the second mode to the first mode. Alternatively, the operation mode of the plasma generation device can include three or more modes.

[0300] 3.2.1.2 Second Example The following describes the embodiments described with reference to FIGS. 22 to 26 using more specific examples. According to one embodiment, when ensuring the stability of the initial discharge of plasma is required (for example, in the case of atmospheric pressure plasma discharge), the plasma generation apparatus may further include a DC power supply and an electrode that provide a seed charge to the plasma discharge. In this case, the operation modes of the plasma generation apparatus may include a first mode for assisting the initial discharge (i.e., initial discharge mode) and a second mode for assisting the main discharge (i.e., main discharge mode). Unless otherwise specified below, the contents of the embodiments described with reference to FIGS. 22 to 26 may be similarly applied.

[0301] 27 is a diagram for explaining a plasma discharge process in the case where the plasma generation device includes a first antenna module 203, a second antenna module 204, an RF power supply device 102, a DC power supply device 101, and DC electrodes 231 and 233. Regarding the DC power supply device 101 and the DC electrode 231, the contents described above in relation to FIGS. 4 to 7 can be similarly applied.

[0302] 28 and 29 are schematic circuit diagrams for explaining changes in the operation mode of the plasma generating device exemplified in FIG.

[0303] The mode-changing plasma discharge process of the plasma generating device including the DC electrode will be described below with reference to FIGS. 27, 28 and 29.

[0304] The operation modes of the plasma generation device can include a first mode for generating an initial plasma discharge and a second mode for generating a main plasma discharge. Fig. 27(a) is a diagram for explaining the operation of the plasma generation device in the first mode. Fig. 27(b) is a diagram for explaining the operation of the plasma generation device in the second mode.

[0305] Referring to (a) of Figure 27, in the first mode, the plasma device can provide power to the first antenna module 203 and the second antenna module 204 via the power supply device 102, with a first frequency corresponding to the resonant frequency of the first antenna module as the driving frequency.

[0306] 27(a), when the operation mode is the first mode, the DC power supply 101 can apply a high-voltage pulse to the DC electrode 231. When the operation mode is the first mode, the plasma generating device can apply a high-voltage pulse to the DC electrode 231 via the DC power supply 101 to form an electric field E4. The electric field E4 can be formed between the DC electrode 231 and an object functioning as a counter electrode. For example, the electric field E4 can be formed between the DC electrode 231 and the gas tube 211. The plasma generating device can form the electric field E4 and induce a local discharge (e.g., a streamer discharge) to supply a seed charge in the dielectric tube.

[0307] Referring to Figure 28, when the operating mode of the plasma generating device is the first mode, a high voltage pulse is applied to the DC electrode 231 via the DC power supply device 101 to generate a seed charge, and an initial plasma discharge can be performed via the first antenna module 203 based on the generated seed charge.

[0308] When the plasma generating device is in a first operation mode, the plasma generating device may generate plasma discharge through a first antenna module based on a seed charge. The plasma discharge through the first antenna module may be a capacitively coupled plasma discharge or an inductively coupled plasma discharge. Here, the case where the discharge through the first antenna module is a capacitively coupled plasma discharge will be described.

[0309] According to one embodiment, the discharge state of the plasma can change over time, and the operation mode of the plasma generating device can be changed in response to the change in the plasma discharge state.

[0310] For example, plasma discharge in the first mode can be mainly achieved by the charge-coupled mode (E-mode). However, if sufficient plasma is generated by the charge-coupled mode, a second electric field E2, which is an azimuthal inductive electric field, can be formed inside the dielectric tube. Once the second electric field E2 is formed, plasma can be generated by inductively coupled plasma discharge or the inductively coupled mode (H-mode).

[0311] The plasma generation device can change its operation mode in response to a change in the plasma discharge state. Referring to Fig. 28, the plasma generation device transmits a power signal having a first frequency f1 to the first antenna module 203 and the second antenna module 204 via the power supply device 102, and can change its operation mode in response to a transition of the plasma discharge state.

[0312] The plasma generation device can sense changes in the plasma discharge state. The plasma generation device can include a sensor module that acquires the current flowing through the first antenna module 203 and / or the second antenna module 204 and / or the voltage applied across the first antenna module 203 and / or the second antenna module 204. The plasma generation device can acquire changes in the current flowing through the first antenna module 203 and / or the second antenna module 204 and / or the voltage applied across the first antenna module 203 and / or the second antenna module 204 via the sensor module, and change the drive frequency and / or operation mode of the power supply device 102.

[0313] For example, a change in the plasma discharge state can change the current flowing through the first antenna module 203 and / or the second antenna module 204 and / or the voltage applied across the first antenna module 203 and / or the second antenna module 204. For example, when the primary plasma discharge state is changed from capacitively coupled plasma discharge to inductively coupled plasma discharge, the current flowing through the first antenna module 203 and / or the second antenna module 204 and / or the voltage applied across the first antenna module 203 and / or the second antenna module 204 can be reduced.

[0314] The plasma generating device can change its operating mode to the second mode in response to a decrease in the current flowing through the first antenna module 203 and / or the second antenna module 204 and / or the voltage applied across the first antenna module 203 and / or the second antenna module 204.

[0315] When the operating mode of the plasma generating device is changed, the plasma generating device provides power to the first antenna module 203 and the second antenna module 204 at a driving frequency of the second frequency, and can operate the second antenna module 204 as a driven antenna module as described in the above embodiment.

[0316] 27(b), in the second mode, the DC power supply 101 can stop supplying power. In the second mode, the plasma generation device can provide power to the first antenna module 203 and the second antenna module 204 using the second frequency corresponding to the resonant frequency of the second antenna module 204 as the driving frequency, thereby generating a main plasma discharge.

[0317] Referring to FIG. 29, when the operation mode of the plasma generating device is the second mode, the second frequency is used as the driving frequency and main plasma discharge can be performed through the second antenna module 204 based on the initial discharge plasma generated by the first antenna module 203.

[0318] Figure 30 is a diagram illustrating the changes in voltage and current depending on the operating mode of the plasma generation device. Figure 30 is a diagram illustrating the DC high voltage pulse a, the current b flowing through the first antenna module, the voltage c across the induction coil of the first antenna module, the current d flowing through the second antenna module, the voltage e across the induction coil of the second antenna module, and the frequency f over time. In Figure 30, the current and voltage graphs indicate magnitude.

[0319] With respect to (b), (c), (d), (e), and (f) of Figure 30, the current b flowing through the first antenna module of the plasma generation device, the voltage c across the induction coil of the first antenna module, the current d flowing through the second antenna module, the voltage e across the induction coil of the second antenna module, and the frequency f can be similarly applied to the contents described above with reference to Figure 25.

[0320] Referring to (a) of FIG. 30, when the operation mode of the plasma generation device is the first mode, the DC power supply device 101 can generate high-voltage pulses. The DC power supply device 101 can generate high-voltage pulses while the first mode is maintained (while the drive frequency is maintained at the first frequency f1). The DC power supply device 101 can stop generating high-voltage pulses even before the first mode ends. The plasma generation device (or a control unit of the plasma generation device) can control the DC power supply device 101 to generate a predetermined number of high-voltage pulses. The plasma generation device can control the DC power supply device 101 to generate high-voltage pulses for a predetermined time.

[0321] Referring to (b) and (c) of Figure 30, when the operating mode is the first mode, a change in the plasma discharge state may cause a decrease in the current flowing through the first antenna module and / or the voltage across the induction coil of the first antenna module.

[0322] 28(d), (e), and (f), the plasma generating device can change the operation mode to the second mode in response to a decrease in the current flowing through the first antenna module and / or the voltage across the induction coil of the first antenna module. Referring to FIG. 30(a), when the operation mode of the plasma generating device is in the second mode, the DC power supply can stop generating high-voltage pulses.

[0323] Meanwhile, in the above embodiment, the operation mode is changed to the second mode in response to a change in the plasma state in the first mode. However, the operation mode may be changed in the reverse order.

[0324] 3.2.2 Two antennas and one inverter 31 is a diagram illustrating a plasma generation apparatus according to an embodiment. Referring to FIG. 31, the plasma generation apparatus may include a power supply module 104, a first antenna module 203, and a second antenna module 204.

[0325] The RF power supply module 104 may be an AC power source having a predetermined frequency range, and may operate at a drive frequency that is the resonant frequency of the antenna module 202 of the first antenna module 203 and / or the second antenna module 204.

[0326] A method for controlling a plasma generation device according to an embodiment includes the steps of controlling the plasma generation device to a first mode via a power supply module and controlling the plasma generation device to a second mode via the power supply module. The above-described content can be applied to the first mode and the second mode.

[0327] FIG. 32 is a diagram for explaining a method for controlling a plasma generation apparatus according to an embodiment.

[0328] Referring to FIG. 32, a method for controlling a plasma generating apparatus according to one embodiment may include step S310 of providing power at a first frequency to a first antenna module and a second antenna module via a power supply module, and step S330 of providing power at a second frequency to the first antenna module and the second antenna module via the power supply module.

[0329] Step S310 of providing power at a first frequency to the first antenna module and the second antenna module via the power supply module may include providing power with the first frequency corresponding to the resonant frequency of the first antenna module as a driving frequency.

[0330] The first antenna module may be an antenna module including an interlayer capacitor. In this case, the voltage distribution of the first antenna module may be as shown in FIG. 26(a). Alternatively, the first antenna module may be an antenna module without an interlayer capacitor. In this case, the power distribution of the first antenna module may be as shown in FIG. 16(a).

[0331] The step S310 of providing power at a first frequency to the first antenna module and the second antenna module via the power supply module may include inducing a capacitively coupled plasma discharge via the first antenna module.

[0332] Step S330 of providing power at a second frequency to the first antenna module and the second antenna module via the power supply module may include providing power with the second frequency corresponding to the resonant frequency of the second antenna module as a driving frequency.

[0333] The second antenna module may be an antenna module including an interlayer capacitor, and in this case, the power distribution of the second antenna module may look like that illustrated in connection with (b) of FIG.

[0334] The step S330 of providing power at the second frequency to the first antenna module and the second antenna module via the power supply module may include inducing an inductively coupled plasma discharge via the second antenna module.

[0335] According to an embodiment, the method for controlling the plasma generation device may further include acquiring a change in the power signal. The method for controlling the plasma device may include acquiring a change in the current flowing through the first antenna module or a change in the voltage across the first antenna module (or some elements constituting the first antenna module), and changing the drive frequency of the power supply module to a second frequency based on the change.

[0336] 3.2.3 Two antennas and two inverters Fig. 33 is a diagram for explaining a plasma generation apparatus according to an embodiment. Referring to (a) and (b) of Fig. 31, the plasma generation apparatus according to an embodiment includes a first power supply module 105 which is an AC power source having a first frequency band and a first matching range, a second power supply module 106 which is an AC power source having a second frequency band and a second matching range, a first antenna module 205 which receives power from the first power supply module 105 to generate plasma discharge, and a second antenna module 206 which receives power from the second power supply module 106 to generate plasma discharge.

[0337] The first power supply module 105 may have a first driving frequency range, and the second power supply module 106 may have a second driving frequency range that is at least partially different from the first driving frequency range. The first power supply module 105 may be driven at a first frequency within the first driving frequency range. The second power supply module 106 may be driven at a second frequency within the second driving frequency range. The first frequency may correspond to a resonant frequency of the first antenna module 205, and the second frequency may correspond to a resonant frequency of the second antenna module 206. The first power supply module 105 may include a first matching element. The second power supply module 106 may include a second matching element having an impedance different from that of the first matching element.

[0338] A method for controlling a plasma generation device according to an embodiment includes the steps of controlling the plasma generation device to a first mode via a first power supply module and controlling the plasma generation device to a second mode via a second power supply module. The above-mentioned contents can be applied to the first mode and the second mode.

[0339] FIG. 34 is a diagram for explaining a plasma generation method according to one embodiment.

[0340] Referring to FIG. 34, a method for controlling a plasma generation apparatus according to one embodiment may include step S410 of providing power at a first frequency to a first antenna module via a first power supply module, and step S430 of providing power at a second frequency to a second antenna module via a second power supply module.

[0341] The step S410 of providing power at a first frequency to the first antenna module via the first power supply module may include providing power to the first antenna module via the first power supply module at the first frequency, which is the resonant frequency of the first antenna module, whereby the voltage distribution of the first antenna module may appear as illustrated in connection with (a) of FIG.

[0342] Step S410 of providing power at a first frequency to the first antenna module via the first power supply module may include operating at the first frequency as a driving frequency and inducing a capacitively coupled plasma discharge inside the dielectric tube via the first antenna module.

[0343] Alternatively, step S410 of providing power at a first frequency to the first antenna module via the first power supply module may include providing power at the first frequency to the first antenna module via the first power supply module to induce an inductively coupled plasma discharge via an induced electric field having a first strength inside the dielectric tube.

[0344] The step S430 of providing power at a second frequency to the second antenna module via the second power supply module may include providing power to the second antenna module via the second power supply module at the second frequency, which is the resonant frequency of the second antenna module, whereby the power distribution of the second antenna module may appear as illustrated in connection with (b) of FIG.

[0345] Step S430 of providing power at a second frequency to the second antenna module via the second power supply module may include operating at the second frequency as a driving frequency and inducing an inductively coupled plasma discharge inside the dielectric tube via the second antenna module.

[0346] The step S430 of providing power at a second frequency to the second antenna module via the second power supply module may include operating at the second frequency as a driving frequency to form an inductive electric field having a second strength inside the dielectric tube to induce an inductively coupled plasma discharge, where the second strength may be greater or less than the first strength of the electric field induced by the first power supply module.

[0347] According to one embodiment, the method for controlling a plasma generation device may further include acquiring a change in a power signal. The method for controlling a plasma device may include acquiring a change in a current flowing through the antenna module or a change in a voltage across the antenna module (or some elements constituting the antenna module). The method for controlling a plasma device may include acquiring the above-mentioned change and controlling the first power supply module and / or the second power supply module based on the change. For example, the method for controlling a plasma device may include acquiring a drop in a current flowing through the first antenna module or a voltage across the first antenna module (or some elements constituting the first antenna module), and based on the change, suspending operation of the first power supply module and starting operation of the second power supply module.

[0348] As explained in the above examples, by using a plurality of antenna modules each having different discharge characteristics, it is possible to selectively generate plasma discharge according to various discharge environments. By generating plasma discharge using a plurality of antenna modules, it is possible to provide a plasma generation device that can generate discharge in various environments.

[0349] 4. Plasma generation device that suppresses by-products On the other hand, by applying a voltage to an antenna coil wound around the tube, byproducts other than the desired product can be generated. For example, by applying a voltage to the coil, an electric field having a component perpendicular to the tube is generated, which accelerates the plasma generated inside the tube toward the inner wall of the tube and causes it to collide with the inner wall. Byproducts that are separated from the inner wall by the collision can be mixed with the plasma products (e.g., radicals).

[0350] In the following, several examples of a plasma generating device and a control method thereof for suppressing the generation of by-products will be described.

[0351] 4.1 Antenna module A plasma generating device according to one embodiment can include an antenna module designed to minimize the generation of by-products.

[0352] The antenna module may include one or more unit antennas and unit capacitors, and may be arranged around the plasma dielectric tube (see FIGS. 4 and 6).

[0353] The antenna module may include one or more unit antennas arranged to be sandwiched between plasma dielectric tubes. Each unit antenna may be arranged at a predetermined interval along the length of the tube. Each unit antenna may be arranged spaced apart along the length of the tube and rotated about the central axis of the tube (see, for example, FIG. 10 and related description). The unit antenna may be an inductor having an inductance. Each unit antenna may have the same inductance.

[0354] The unit antenna may include a unit turn. The unit antenna may include a first turn in contact with the dielectric tube and a second turn disposed farther away from the dielectric tube than the first turn. The first turn and the second turn may be located on the same plane. The first turn and the second turn may be located on a plane perpendicular to the longitudinal direction of the dielectric tube. For example, a unit antenna module according to one embodiment may be prepared as illustrated in FIG. 12.

[0355] The antenna module may include one or more unit capacitors connected to the unit antennas. The unit capacitors may be connected to the unit antennas and arranged between the unit antennas. The unit capacitors may be arranged between the unit antennas and a power source. For example, the unit capacitors may be arranged as illustrated in FIG. 8 or FIG. 10. One or more unit capacitors included in the antenna module may have the same capacitance. Alternatively, one or more unit capacitors included in the antenna module may have different capacitances.

[0356] The antenna module is connected to a power source, and can receive power from the power source to provide plasma discharge within the dielectric tube. The power supply and plasma discharge operations described above in this specification are equally applicable.

[0357] FIG. 36 is a diagram illustrating an antenna module according to an embodiment.

[0358] The antenna module 360 may include one or more unit antennas 361 and one or more unit capacitors 363. The antenna module 360 may be arranged around a dielectric tube. The antenna module 360 may include one or more unit antennas 361 having the same shape. The unit antennas may be connected to the unit capacitors 363. The unit capacitors included in the antenna module 360 may be interlayer capacitors arranged between the unit antennas 361 and the unit antennas, or terminal capacitors arranged between the unit antennas and a power source. The antenna module may be connected to a power source to receive power. The above-mentioned unit capacitors 363 may be electrically interposed between the power source and the unit antennas 361 or between different unit antennas 361. In other words, the unit capacitors 363 may electrically connect the power source and the unit antennas 361 in series. Alternatively, the unit capacitors 363 may electrically connect different unit antennas 361 in series, as described below.

[0359] For example, the antenna module 360 may include a first terminal capacitor connected to a power source, a first unit antenna connected to the first terminal capacitor, a first interlayer capacitor connecting the first and second unit antennas, a second unit antenna located below the first unit antenna, a second interlayer capacitor connecting the second and third unit antennas, a third unit antenna located below the second unit antenna, a third interlayer capacitor connecting the third and fourth unit antennas, and a fourth unit antenna located below the third unit antenna and connected to a power source. Each unit antenna may be prepared in a form illustrated in FIG. 37 and may be rotated.

[0360] 36, the antenna module 360 is described based on the case where it includes four unit antennas, but this is merely an example, and the number of unit antennas and / or unit capacitors may be changed. The contents described above in this specification can be similarly applied to the antenna module 360.

[0361] 4.2 Antenna module configuration The unit antennas and unit capacitors constituting the antenna module according to one embodiment will be described below.

[0362] FIG. 37 is a diagram illustrating a unit antenna according to an embodiment. Referring to FIG. 37, the unit antenna may include at least two unit turns. The unit antenna may include two unit turns arranged on the same plane and having a concentric circle (concentric arc) shape. The unit antenna may include a first unit turn located on the inside and having a smaller radius, and a second unit turn located on the outside and having a larger radius than the first unit turn. The first unit turn may contact the dielectric tube when the antenna module is assembled to the dielectric tube. The unit antenna may include a connection portion connecting each unit turn.

[0363] 37, a unit antenna may include a first turn located at the innermost position, a second turn located outside the first turn, and a third turn located outside the second turn. The first turn and the second turn may be connected via a first connecting part. The second turn and the third turn may be connected via a second connecting part. The first turn may extend in an arc from a first point P1 to a second point P2. The outermost third turn may have a third point P3 that is the furthest from the first point, and the unit antenna may be connected from the first point to the third point.

[0364] Meanwhile, the shape of the unit antenna illustrated in Fig. 37 is merely an example, and the antenna module may include unit antennas of other shapes. For example, although Fig. 37 illustrates an antenna module including three turns, the antenna module may include more or less than three turns.

[0365] 36 and 37 together, a first terminal capacitor may be connected between a first point of the first unit antenna and a power supply. A first interlayer capacitor may be connected between a third point of the first unit antenna and a first point of the second unit antenna. A second interlayer capacitor may be connected between a third point of the second unit antenna and a first point of the third unit antenna.

[0366] The unit capacitors may have fixed or variable capacitance. The unit antennas may have fixed or variable inductance. The capacitance of the capacitors included in the antenna module or the inductance of the inductors included in the antenna module may be determined taking into consideration the placement of the antenna module with respect to the tube. The capacitance of the capacitors included in the antenna module or the inductance of the inductors included in the antenna module may be determined taking into consideration the placement of the antenna module to which each capacitor or inductor is connected. The antenna module may include capacitors having capacitances determined to minimize the generation of by-products or unit antennas having inductances determined to minimize the generation of by-products, taking into consideration the placement of the antenna module, capacitors, and / or unit antennas.

[0367] According to one embodiment, the interlayer capacitors may have a fixed capacitance and the end capacitors may have a variable capacitance. Alternatively, one or more interlayer capacitors may have the same capacitance and the end capacitors may have a capacitance that is different from the capacitance of the interlayer capacitors. For example, the interlayer capacitors may have a first capacitance, a first end capacitor may have a second capacitance that is different from the first capacitance, and a second end capacitor may have a third capacitance that is different from the second capacitance.

[0368] The capacitance value of the unit capacitor can be determined so as to minimize by-products generated during plasma discharge. During plasma discharge, a voltage applied to the antenna forms an electric field with a component perpendicular to the inner wall of the dielectric tube, which causes the plasma to collide with the inner wall of the dielectric tube and generate by-products. The capacitance of the unit capacitor can be determined so as to minimize the effect of the voltage formed by the antenna on the plasma inside the dielectric tube.

[0369] As an example, by configuring the capacitance of the terminal capacitors located at both ends of the antenna module to be different from the capacitance of the interlayer capacitors, it is possible to minimize the generation of by-products due to the voltage applied to the antenna module. For example, by configuring the capacitance of the terminal capacitors asymmetrically, it is possible to minimize the potential at one point of the unit turn closest to the discharge tube among the unit turns constituting the unit antenna, thereby minimizing the generation of by-products due to plasma collision. That is, it is possible to minimize the maximum value (absolute value) of the potential at any point within the unit turn closest to the dielectric tube, thereby minimizing the generation of by-products due to plasma collision. That is, it is possible to minimize the voltage relative to ground at any point within the unit turn closest to the dielectric tube, thereby minimizing the generation of by-products due to plasma collision.

[0370] Referring to Figures 36 and 37, in order to minimize the generation of by-products, the absolute value voltage V of the potential of the reactance component between the first point P1 and the second point P2 of the unit antenna is R In other words, by minimizing the voltage applied to the reactance component of the first turn located at the innermost position and minimizing the voltage component in the direction perpendicular to the inner wall of the dielectric tube, the generation of by-products can be reduced.

[0371] The voltage (or potential) of the reactance component between points can mean the voltage (or the potential difference between both ends) applied to the combined reactance component between points.

[0372] According to one embodiment, the capacitance of the first end capacitor (the capacitance of the capacitor connected to the first point P1 of the first turn) may be greater than the capacitance of the second end capacitor. The capacitance of the first end capacitor may be greater than the capacitance of the interlayer capacitor. The capacitance of the second end capacitor (the capacitance of the capacitor connected to the third point P3 of the third turn) may be less than the capacitance of the interlayer capacitor. The combined capacitance value of the first end capacitor and the second end capacitor may be equal to the capacitance value of the interlayer capacitor.

[0373] By appropriately adjusting the capacitance of the first end capacitor and the capacitance of the second end capacitor, the absolute values of the potentials at the first point P1 and the second point P2 can be adjusted to be similar. By adjusting the absolute values of the voltages applied to the first point P1 and the second point P2 to be similar, the absolute value of the potential of the reactance component of the first turn located at the innermost position can be minimized, thereby reducing the generation of by-products.

[0374] According to another embodiment, in order to assist in generating a plasma discharge, the capacitance of the terminal capacitor can be changed so that the absolute value of the potential of the reactance component of the innermost unit turn is maximized.

[0375] For example, to support the plasma discharge, the absolute value V of the potential of the reactance component between the first point P1 and the second point P2 of the unit antenna is R In other words, the absolute value of the potential of the reactance component of the first turn located at the innermost position can be maximized, and a charge-coupled discharge can be induced inside the dielectric tube to assist the discharge. To assist the discharge, the capacitance of the first end capacitor can be set smaller than the capacitance of the second end capacitor. The capacitance of the first end capacitor may be smaller than the capacitance of the interlayer capacitor. The capacitance of the second end capacitor may be larger than the capacitance of the interlayer capacitor. The combined capacitance of the first end capacitor and the second end capacitor may be the same as the capacitance of the interlayer capacitor.

[0376] According to one embodiment, an antenna module can be provided that is coupled to a dielectric tube and receives power from a power source. The antenna module can include a first unit antenna including a first unit turn extending from a first point to a second point and a second unit turn extending from a third point to a fourth point. The first unit turn can be positioned inside the second unit turn, and the second point can be connected to the third point. Each unit turn can extend in an arc or a circle. Each unit turn can extend in an arc having the same central angle.

[0377] The antenna module may include a first capacitor connected to a first point of the first unit turn and connected between a first terminal of the power source and the first point, and a second capacitor connected between a second terminal of the power source and a fourth point.

[0378] The capacitance of the second capacitor may be smaller than the capacitance of the first capacitor to minimize damage to the tube and the generation of by-products due to the voltage applied to the antenna module. The capacitance of the second capacitor may be smaller than the capacitance of the first capacitor to minimize the voltage applied to the reactance component of the first unit turn (the turn located at the innermost corner of the first unit antenna) connected to the first capacitor, thereby minimizing damage to the tube and the generation of by-products.

[0379] The capacitance of the first capacitor may be more than twice the capacitance of the second capacitor, and the capacitance of the first capacitor may be more than twice the capacitance of the second capacitor so that the voltage applied to the reactance component of the first unit turn is minimized.

[0380] The antenna module may include a third capacitor connected between the fourth point of the second unit turn and the second capacitor, and the capacitance of the third capacitor may be smaller than the capacitance of the second capacitor.

[0381] A combined capacitance of the first capacitor and the second capacitor may correspond to a capacitance of the third capacitor, and the combined capacitance of the first capacitor and the second capacitor may be substantially the same as the capacitance of the third capacitor.

[0382] The antenna module may further include a second unit antenna including a third unit turn extending from the fifth point to the sixth point and a fourth unit turn extending from the seventh point to the eighth point. The third unit turn may be located inside the fourth unit turn, and the sixth point may be connected to the seventh point. A third capacitor may be connected between the fourth point and the fifth point. A second capacitor may be connected between the eighth point and a second terminal of the power source.

[0383] The capacitance of the third capacitor may be smaller than the capacitance of the second capacitor so that the voltage applied to the reactance component of the first unit turn (the turn located at the innermost corner of the first unit antenna) connected to the first capacitor is minimized, thereby minimizing damage to the tube and the generation of by-products.

[0384] The first and second unit turns can lie on a plane perpendicular to the length of the dielectric tube, with the first unit turn extending in a first direction from a first point to a second point, and the second unit turn extending in the first direction from a third point to a fourth point, similar to the first unit turn.

[0385] The first point may be located closer to the tube than the fourth point. The first point may correspond to P1 as illustrated in Figure 37. The fourth point may correspond to P3 as illustrated in Figure 37.

[0386] When power is supplied to the antenna module, the voltage applied to the reactance component of the first capacitor may be smaller than the voltage applied to the reactance component between the first point and the second point, and the voltage applied to the reactance component of the third capacitor may correspond to the voltage applied to the reactance component between the first point and the fourth point.

[0387] The antenna module can resonate at a resonant frequency determined based on the capacitance of the third capacitor and the inductance of the first unit antenna. When the antenna module is in a resonant state, a point at which the potential with respect to the first terminal becomes zero can be located on the first unit turn of the first unit antenna. The point can be a point at which the potential of the reactance component between the first terminal and the point becomes zero. The point can be a point at which the voltage applied to the reactance component between the first terminal and the point becomes zero.

[0388] The antenna module can resonate at a resonant frequency determined based on the capacitance of the third capacitor and the inductance of the first unit antenna. When the antenna module is in a resonant state, a voltage applied to a reactance component between the first point and the first terminal can be substantially the same as a voltage applied to a reactance component between the second point and the first terminal.

[0389] According to another embodiment, an antenna module including a first unit antenna, a first capacitor, and a second capacitor can be provided as an antenna module coupled to a dielectric tube and supplied with power from a power source.

[0390] The first unit antenna may include a first unit turn extending from a first point to a second point and a second unit turn extending from a third point to a fourth point. The first unit turn may be located inside the second unit turn, and the second point may be connected to the third point.

[0391] The antenna module can include a first capacitor connected between a first terminal of the power source and a first point of the first unit turn.

[0392] The antenna module may include a second capacitor connected to a fourth point of the second unit turn.

[0393] The first capacitor may be connected between the first terminal of the power supply and the first point.

[0394] When power is supplied to the antenna module, the point where the voltage of the first unit antenna is lowest may be located on the first unit turn. The point may be the point where the voltage of the reactance component between the first terminal and the point becomes zero.

[0395] The antenna module can resonate at a resonant frequency determined based on the capacitance of the second capacitor and the inductance of the first unit antenna.

[0396] When the antenna module is in a resonant state, the point at which the voltage is lowest in the first unit antenna may be located within the first unit turn.

[0397] When power is supplied to the antenna module, the point at which the voltage is lowest in the first unit antenna may be located on the first unit turn.

[0398] When power is supplied to the antenna module, the point at which the absolute value of the potential of the reactance component in the first unit antenna is minimum may be located on the first unit turn.

[0399] The capacitance of the first capacitor may be more than twice the capacitance of the second capacitor.

[0400] The capacitance of the second capacitor may be smaller than the capacitance of the first capacitor to minimize damage to the tube and the generation of by-products due to the voltage applied to the antenna module.

[0401] The antenna module may include a second unit antenna including a third unit turn extending from the fifth point to the sixth point and a fourth unit turn extending from the seventh point to the eighth point. The third unit turn may be positioned inside the fourth unit turn, and the sixth point may be connected to the seventh point.

[0402] The second capacitor may be connected between the fourth point and the fifth point.

[0403] The circuit may further include a third capacitor connected between the eighth point and the second terminal of the power supply.

[0404] The capacitance of the second capacitor may be smaller than the capacitance of the third capacitor.

[0405] A combined capacitance of the first capacitor and the third capacitor may correspond to the capacitance of the second capacitor, and the combined capacitance of the first capacitor and the third capacitor may be substantially the same as the capacitance of the second capacitor.

[0406] According to another embodiment, an antenna module including a first unit antenna, a first capacitor, and a second capacitor can be provided as an antenna module coupled to a dielectric tube and supplied with power from a power source.

[0407] The first unit antenna may include a first unit turn extending from a first point to a second point and a second unit turn extending from a third point to a fourth point. The first unit turn may be positioned inside the second unit turn, and the second point may be connected to the third point.

[0408] The first capacitor is connected to the first point of the first unit turn and can be connected between the first terminal of the power source and the first point.

[0409] A second capacitor may be connected between the second terminal of the power supply and the fourth point, and the capacitance of the second capacitor may be different from the capacitance of the first capacitor.

[0410] The antenna module may further include a third capacitor connected between a fourth point of the second unit turn and the second capacitor.

[0411] Meanwhile, the antenna module may further include a second unit antenna including a third unit turn extending from the fifth point to the sixth point and a fourth unit turn extending from the seventh point to the eighth point. The third unit turn may be positioned inside the fourth unit turn, and the sixth point may be connected to the seventh point.

[0412] The third capacitor may be connected between the fourth point and the fifth point. The second capacitor may be connected between the eighth point and the second terminal of the power supply.

[0413] A combined capacitance of the first capacitor and the second capacitor may correspond to a capacitance of the third capacitor, and the combined capacitance of the first capacitor and the second capacitor may be substantially the same as the capacitance of the third capacitor.

[0414] The capacitance of the first capacitor, the capacitance of the second capacitor, and the capacitance of the third capacitor can be understood in the same way as in the explanation of FIGS.

[0415] 4.3 Voltage distribution during plasma discharge operation The absolute value of the potential of the reactance component of the unit antenna according to the capacitance of the terminal capacitor will be described below.

[0416] FIG. 38 is a diagram for explaining the distribution of potentials applied to the antenna module according to one embodiment.

[0417] Fig. 38 is a diagram illustrating an antenna module according to one embodiment and the potential of the reactance component of the antenna module. Fig. 38 shows a simplified diagram of the voltage applied to the reactance component of the antenna module when the capacitance of the first terminal capacitor C1 is greater than the capacitance of the second terminal capacitor C2 under conditions of a frequency of approximately 3 MHz and a current of 20 A. In this case, the potential at the first point P1 was measured to be -100 V, and the potential at the second point P2 was measured to be 100 V.

[0418] During plasma discharge, the capacitance of the terminal capacitor can be appropriately adjusted to minimize the generation of by-products caused by the plasma impinging on the dielectric tube due to the capacitive coupling of the electric field formed by the antenna and the plasma. The diagram illustrated in Figure 38 shows a simplified view of the antenna module in which the capacitance of the terminal capacitor is determined to minimize by-products, and the potential of the reactance component of the antenna module.

[0419] Compared with Figure 11, the antenna module illustrated in relation to Figure 11 is similar to the antenna module illustrated in Figure 38 in that the combined capacitance of the terminal capacitors on both sides and the capacitance of the interlayer capacitor are arranged to correspond to each other, and differs from the antenna module described in relation to Figure 38 in that the capacitances of the terminal capacitors on both sides are embodied to be identical.

[0420] The antenna module shown in Fig. 11 may be designed so that the voltage applied to the reactance component of one terminal capacitor corresponds to half the voltage applied to the reactance component of the unit antenna, so that the voltages applied to the reactance components of the antenna (i.e., the voltages applied between the terminals of the antenna) are canceled out. In contrast, the antenna module shown in Fig. 38 may be configured so that the capacitances of the terminal capacitors on both sides are different, so that the potential of the reactance component corresponding to the innermost turn of the unit antenna that makes up the antenna module is minimized.

[0421] The antenna module illustrated in FIG. 38 can be configured so that the voltage applied to the reactance component of the first terminal capacitor C1 is different from the voltage applied to the reactance component of the second terminal capacitor C2.

[0422] An antenna module according to one embodiment can be configured so that the voltage applied to the reactance component of the first terminal capacitor C1 connected to the innermost turn of the first unit antenna is smaller than the voltage applied to the reactance component of the second terminal capacitor C2 connected to the outermost turn of the second unit antenna.

[0423] In one embodiment, the antenna module can be configured so that the capacitance of the first terminal capacitor C1 connected to the innermost turn of the first unit antenna is greater than the capacitance of the second terminal capacitor C2 connected to the outermost turn of the second unit antenna.

[0424] An antenna module according to one embodiment can be configured so that the magnitude of the potential of the reactance component of the innermost turn of a first unit antenna connected to a first terminal capacitor having a first capacitance is smaller than the magnitude of the potential of the reactance component of the outermost turn of a second unit antenna connected to a second terminal capacitor having a second capacitance smaller than the first capacitance.

[0425] According to one embodiment, the antenna module can be prepared so that the magnitude of the potential of the reactance component of the first unit turn located at the innermost side of the unit antenna is smaller than the magnitude of the potential of the reactance component of the second unit turn located at the outermost side of the unit antenna.

[0426] In an antenna module according to one embodiment, the point at which the potential difference with respect to the power supply is minimum (e.g., the end of the first terminal capacitor not connected to the unit antenna, or ground) may be located on the first unit turn located at the innermost position of the unit antenna, and the point at which the potential difference with respect to the power supply is maximum may be located on the second unit turn located at the outermost position of the unit antenna. Referring to FIG. 38, the antenna module may be configured so that the point at which the potential of the reactance component in the unit antenna becomes zero (i.e., the point at which the potential difference with respect to the voltage is minimum) is closer to the first terminal capacitor C1 or the power supply than in FIG. 10. That is, the capacitance of the terminal capacitor may be adjusted so that the point at which the potential becomes zero is located on the innermost turn of the unit antenna (i.e., between the first point P1 and the second point P2). This reduces damage to the dielectric tube and the resulting generation of by-products due to the voltage applied to the innermost turn closest to the dielectric tube.

[0427] Figure 39 shows a simplified diagram of an antenna module according to another embodiment and the voltage applied to the reactance component of the antenna module. Figure 39 also shows a simplified diagram of the voltage applied to the reactance component of the antenna module when the first terminal capacitor C1 is omitted under conditions of a frequency of approximately 3 MHz and a current of 20 A. In this case, the potential at the first point P1 was measured to be 0 V, and the potential at the second point P2 was measured to be 200 V.

[0428] The antenna module illustrated in Fig. 39 is based on the case where the first end capacitor C1 is omitted and the capacitance of the second end capacitor C2 is the same as the capacitance of the interlayer capacitor. Referring to Fig. 39, the voltage applied to the reactance component of the first unit turn (the innermost turn) extending from the first point P1 to the second point P2 may be greater than the voltage applied to the reactance component of the first turn of the antenna module illustrated in Fig. 38.

[0429] Referring to Figures 38 and 39 together, it can be seen that by appropriately determining the value of the first end capacitor, it is possible to reduce the absolute value of the potential at a point on the reactance component of the innermost turn.

[0430] FIG. 40 is a simplified diagram showing an antenna module according to another embodiment and the voltages applied to the reactance components of the antenna module.

[0431] Figure 40 shows a simplified diagram of the voltage applied to the reactance component of the antenna module when the capacitance of the second end capacitor C2 is smaller than the capacitance of the first end capacitor C1 under the conditions of a frequency of approximately 3 MHz and a current of 20 A. In this case, the potential at the first point P1 was measured to be -700 V, and the potential at the second point P2 was measured to be -500 V.

[0432] The antenna module illustrated in Fig. 40 can be used to assist plasma discharge. The antenna module illustrated in Fig. 40 can assist plasma discharge to occur more smoothly by maximizing the absolute value of the potential at one point of the reactance component of the innermost turn of the antenna module.

[0433] To assist plasma discharge, the capacitance of the first end capacitor C1 may be set smaller than the capacitance of the second end capacitor C2, and the combined capacitance of the first end capacitor C1 and the second end capacitor C2 may correspond to the capacitance of the interlayer capacitor.

[0434] While the embodiments have been described above by way of limited examples and drawings, those skilled in the art will appreciate that various modifications and variations may be made to the above description. For example, the techniques described may be performed in an order different from that described, and / or the components of the described systems, structures, devices, circuits, etc. may be combined or combined in a manner different from that described, or may be replaced or substituted with other components or equivalents, and still achieve suitable results.

[0435] Therefore, other configurations, other embodiments, and equivalents of the claims are within the scope of the following claims.

Claims

1. an antenna module coupled to a dielectric tube to receive power from a power source, The antenna module includes: a multilayer coil structure including a first end, a second end, and first to Nth coil structures electrically interposed between the first end and the second end, where N is a natural number equal to or greater than 2, each of the first to Nth coil structures including more than two turns, the Nth coil structure being disposed on an Nth plane, and the N-1th coil structure being disposed on an N-1th plane, the N-1th plane being parallel to but different from the Nth plane, the multilayer coil structure further including first to Mth interlayer capacitors, the Mth interlayer capacitors being electrically interposed between the Mth coil structure and the M+1th coil structure, and the M being equal to N-1; at least one first electrical element electrically interposed between the first end and a first terminal of the power source; at least one second electrical element electrically interposed between the second end and a second terminal of the power source; Equipped with the at least one first electrical element has a first resultant reactance, and the at least one second electrical element has a second resultant reactance; An antenna module characterized in that the first composite reactance and the second composite reactance are designed to have different values so that when the antenna module receives power, the points at which the potential of the reactance component with respect to the first end becomes zero are located at the innermost turns of each of the first coil structure to the Nth coil structure.

2. The antenna module of claim 1, characterized in that when the antenna module receives power, the point at which the potential of the reactance component relative to the first end is minimum is located at the innermost turn of each of the first coil structure to the Nth coil structure.

3. The antenna module of claim 1, characterized in that when the antenna module receives power, the point at which the absolute value of the potential of the reactance component relative to the first end is smallest is located at the innermost turn of each of the first coil structure to the Nth coil structure.

4. The antenna module of claim 1, characterized in that when the antenna module receives power, the point at which the potential of the reactance component relative to the first end is maximum is located at the outermost turn of each of the first coil structure to the Nth coil structure.

5. 2. The antenna module according to claim 1, wherein each of the first to Mth interlayer capacitors has a third composite reactance.

6. 6. The antenna module according to claim 5, wherein a sum of the first and second combined reactances corresponds to the third combined reactance.

7. 2. The antenna module according to claim 1, wherein the first combined reactance is greater than the second combined reactance.

8. the at least one first electrical element is directly connected to a first innermost turn of the first coil structure; 8. The antenna module according to claim 7, wherein the at least one second electric element is directly connected to an Nth outermost turn of the Nth coil structure.

9. 2. The antenna module according to claim 1, wherein the first combined reactance is at least twice as large as the second combined reactance.

10. 1. A plasma generation system comprising: a dielectric tube providing a space for guiding the plasma; a power source configured to provide power; an antenna module coupled to the dielectric tube and configured to receive power from the power source and thereby induce the plasma; Equipped with The antenna module includes: a multi-layer coil structure including a first end, a second end, and first to N-th coil structures electrically interposed between the first end and the second end, where N is a natural number equal to or greater than 2; at least one first electrical element electrically interposed between the first end and a first terminal of the power source; at least one second electrical element electrically interposed between the second end and a second terminal of the power source; Including, each of the first coil structure through the Nth coil structure includes more than two turns; the N coil structure is disposed on an N-th plane, and the N-1 coil structure is disposed on an N-1-th plane, the N-1 plane being parallel to but different from the N plane; the multilayer coil structure further includes first to Mth interlayer capacitors, the Mth interlayer capacitors being electrically interposed between the Mth coil structure and the M+1th coil structure, where M is equal to N-1; the at least one first electrical element has a first resultant reactance, and the at least one second electrical element has a second resultant reactance; The first composite reactance and the second composite reactance are designed to have different values so that when the antenna module receives power, the points at which the potential of the reactance components with respect to the first end becomes zero are located at the innermost turns of each of the first coil structure to the Nth coil structure.

11. 11. The plasma generation system of claim 10, wherein when the antenna module receives power, the point at which the potential of the reactance component relative to the first end is minimum is located at the innermost turn of each of the first coil structure to the Nth coil structure.

12. 11. The plasma generation system of claim 10, wherein each of the first to Mth interlayer capacitors has a third composite reactance.

13. The plasma generation system of claim 12 , wherein a sum of the first and second combined reactances corresponds to the third combined reactance.

14. The plasma generation system of claim 10 , wherein the first resultant reactance is greater than the second resultant reactance.

15. the at least one first electrical element is directly connected to a first innermost turn of the first coil structure; 15. The plasma generation system of claim 14, wherein the at least one second electrical element is directly connected to an Nth outermost turn of the Nth coil structure.

Images