Ultra-precise positioning mechanism

By employing a commercially available XY stage with thermal expansion of metal bodies driven by laser beams or nichrome wires, the method addresses the challenge of high costs and narrow line widths in semiconductor manufacturing, achieving cost-effective nanometer-scale precision.

JP2025115913APending Publication Date: 2025-08-07福山寛正
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Patent Information

Application Number
JP2024019841
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-01-26
Publication Date
2025-08-07

AI Technical Summary

Technical Problem

Conventional semiconductor manufacturing technologies face limitations in achieving ultra-precise positioning on the nanometer scale, leading to high costs and restricted line widths, which are not economically viable for high-density semiconductor production.

Method used

Utilize a commercially available XY stage for micron-scale positioning, combined with thermal expansion of metal bodies in target holders caused by laser beams or nichrome wires to achieve nanometer-scale precision, integrating insulators for temperature control.

Benefits of technology

Enables ultra-precise positioning at a lower cost, overcoming linewidth limitations and reducing production costs to a feasible level for high-density semiconductor manufacturing.

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Abstract

To provide an ultra-precise positioning device that realizes ultra-precise positioning in nanometer units at low cost.SOLUTION: In an ultra-precision positioning device, positioning on the order of microns is performed using a commercially available X-Y stage 1, and even more ultra-precision positioning on the order of nanometers is achieved by applying laser light 51, 52 to the metal bodies 211, 221 of target holders 21, 22 to heat them and cause them to thermally expand, or by wrapping a heating wire such as nichrome wire around the metal bodies and heating them to cause them to thermally expand. This thermal expansion causes a minute displacement of the target needle 3, and the amount of displacement is precisely recorded on a platen recording paper.SELECTED DRAWING: Figure 1
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Description

[Technical Field]

[0001] Ultra-precise high-density positioning mechanisms, high-density semiconductor manufacturing field Summary of the Invention assignment

[0002] To inexpensively achieve ultra-precise positioning on the nanometer scale. Solution: Precise positioning on the micrometer scale is performed using a commercially available XY stage 1, and ultra-fine positioning of the target needle 3 on the nanometer scale is achieved by thermal expansion of the metal bodies 211, 221 that constitute the holders 21, 22 that hold the target support table 2. Temperature control is performed using laser beams 51, 52. Insulators 212, 222 are integrated with the metal bodies 211, 221 to form the holders 21, 22 in an insulated state. In Figure 1, the heat source is laser light, but in Figure 2, a simpler heating element similar to nichrome wire is used as the heat source. Items unique to Figure 2 are marked with an '. [Brief explanation of the drawings]

[0003] [Figure 1] This ultra-precision positioning device is characterized in that precision positioning on the order of microns is performed using a commercially available XY stage, and further precision positioning on the order of nanometers is performed by using a laser beam launch tube 4 attached to the XY stage and positional displacement of the target needle 3 caused by thermal expansion of the metal bodies 211, 221 of the target holders 21, 22 due to laser beams 51, 52 emitted from the laser beam launch tube 4. [Figure 2] This ultra-precision positioning device is characterized in that precision positioning on the order of microns is performed using a commercially available XY stage, and that precision positioning on the order of nanometers is performed by displaying the position displacement of the target needle 3 caused by thermal expansion of the metal bodies 211', 221 due to current flow in electric heating wires 51', 52' similar to nichrome wires attached to the XY stage. [Industrial Applicability]

[0004] Ultra-precise positioning, conventional technology in the high-density semiconductor field

[0005] With conventional technology, it was only possible to create semiconductors with a line width of about 10 nanometers by stacking components with high precision and then using machining and exposure technology to stack them. This resulted in high costs and limitations on the line width. In an example currently being studied, the cost for a line width of 3.7 nanometers is estimated to be 2.9 trillion yen, and there is an urgent need to reduce the line width and costs in the field of high-density semiconductor manufacturing.

[0006] Conventionally, the thermal expansion of several nanometers due to a temperature rise around room temperature of 30 to 40 degrees Celsius has been ignored. The present invention aims to actively utilize this thermal expansion for shaping processing. The present invention relates to high-density semiconductor-related technology, which requires ultra-precise positioning technology. Problems that the invention aims to solveProblems that the invention aims to solve

[0007] There is a way to overcome these linewidth limitations and high costs. This method involves using a commercially available XY stage for positioning on the order of 1 micron, and then using the thermal expansion of the metal bodies 211, 221 of the target holder attached to the commercially available XY stage 1 for fine positioning at nanometer levels. This method is explained using Figure 1. The heat source is laser beams 51, 52 from a laser launch tube 4 attached to the XY stage 1. The laser beam is directed at the metal bodies 211, 221 of the holders 21, 22 that hold the target needle support base 2, causing minute thermal expansion equivalent to a nanometer, displacing the target support 2 and causing the target needle to displace slightly. This displacement is then transmitted to the target needle and recorded on the top plate recording paper 10. The minute displacement recorded on the top plate recording paper 10 is inspected with an electron microscope to analyze the relationship between the current and the minute displacement, which contributes to improving the minute processing.

[0008] Even if a nichrome wire is wound around the metal members 211' and 221' of the holder and an electric current is passed through it instead of the laser beams 51 and 52 as the heat source, a slight thermal expansion similar to that caused by laser beam irradiation can be expected.

[0009] The relationship between the current and the nanometer displacement of the target needle must be verified beforehand using an electron microscope in both Figures 1 and 2. It is also necessary to draw a pair of parallel lines spaced at nanometer intervals and confirm their separation. [Explanation of symbols] 1...Commercially available XY stage, 2...Target support stand 21, 22...Target holder 211,221...metal body 51', 52'...Nichrome wire 212,222...Ceramic body 3...Target needle 4...Laser beam launcher 51, 52...Laser beam 51', 52'...Nichrome wire-like thermoelectric wire that generates heat when current is passed through it 10...Top board recording paper (write from below)

Claims

1. In this ultra-precision positioning device, precision positioning up to the micron order is performed using a commercially available XY stage. Further ultra-precision positioning up to the nanometer order is performed by representing the positional displacement of the target needle 3 caused by thermal expansion of the metal bodies 211, 221 of the target holders 21, 22 due to the laser beam launch tube 4 attached to the XY stage and the laser beams 51, 52 emitted from it.

2. In the ultra-precision positioning device, precision positioning up to the micron order is performed using a commercially available XY stage. For ultra-precision positioning on the nanometer order, the device is characterized by representing the positional displacement of the target needle 3 due to the thermal expansion of the metal bodies 211 and 221 caused by the current flowing through the nichrome-like heating wires 51' and 52' attached to the XY stage.

Citation Information

Patent Citations

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