Plasma processing device and cleaning method

Abstract

To provide a plasma processing device to clean the inside of a plasma processing chamber, and a cleaning method.SOLUTION: A plasma processing device includes a plasma processing chamber, a substrate supporting part provided in the plasma processing chamber, a gas introduction part that introduces gas into the plasma processing chamber, a trap part provided in the plasma processing chamber and trapping a reaction by-product, a first heat-transfer fluid supply part that supplies a first heat transfer fluid to a first flow path provided in the substrate supporting part, a second heat-transfer fluid supply part that supplies a second heat transfer fluid to a second flow path provided in the trap part, and a control part. The control part performs the steps of (a) introducing a water-containing gas from the gas introduction part to the plasma processing chamber and supplying the second heat transfer fluid with the lower temperature than the temperature at which the water-containing gas is solidified, to the second flow path, and (b) supplying the second heat transfer fluid with the higher temperature than the temperature at which the water-containing gas is liquified, to the second flow path.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus and a cleaning method. [Background technology]

[0002] Patent Document 1 discloses a plasma processing apparatus in which a temperature control function such as a heater is provided on the sidewall of the chamber body. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-192725 Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a plasma processing apparatus and a cleaning method for cleaning the inside of a chamber. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, a plasma processing apparatus can be provided, comprising: a plasma processing chamber; a substrate support provided in the plasma processing chamber; a gas inlet for introducing gas into the plasma processing chamber; a trap provided in the plasma processing chamber for trapping reaction by-products; a first heat transfer fluid supply unit for supplying a first heat transfer fluid to a first flow path provided in the substrate support; a second heat transfer fluid supply unit for supplying a second heat transfer fluid to a second flow path provided in the trap; and a control unit, wherein the control unit performs the steps of: (a) introducing a water-containing gas into the plasma processing chamber from the gas inlet and supplying a second heat transfer fluid to the second flow path at a temperature lower than the temperature at which the water-containing gas solidifies; and (b) after step (a), supplying a second heat transfer fluid to the second flow path at a temperature higher than the temperature at which the water-containing gas liquefies. [Effects of the Invention]

[0006] According to one aspect, a plasma processing apparatus and a cleaning method for cleaning the inside of a plasma processing chamber can be provided. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. [Figure 2] FIG. 1 is an example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Figure 3] FIG. 1 is a horizontal cross-sectional view of a plasma processing apparatus. [Figure 4] 10 is a flowchart showing an example of an operation of the plasma processing apparatus. [Figure 5] 3A and 3B are diagrams illustrating an example of a state of a plasma processing chamber during plasma processing. [Figure 6] 10A and 10B are diagrams illustrating an example of a state of a plasma processing chamber during condensation processing. [Figure 7] 10A and 10B are diagrams illustrating an example of a state of a plasma processing chamber during a cleaning process. [Figure 8] FIG. 10 is another example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Figure 9] FIG. 10 is another example of a horizontal cross-sectional view of the plasma processing apparatus. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is an example diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] 2 and 3, a configuration example of a capacitively coupled plasma processing apparatus 1 will be described as an example of the plasma processing apparatus 1. Fig. 2 is an example of a diagram for explaining the configuration example of the capacitively coupled plasma processing apparatus 1. Fig. 3 is an example of a horizontal cross-sectional view (cross-section AA in Fig. 2) of the plasma processing apparatus 1.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The showerhead 13 is supported by the plasma processing chamber 10 via an insulating portion 14. The insulating portion 14 electrically insulates the showerhead 13 from a housing of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. Furthermore, a heater 15 for heating the side wall 10a and the ceiling wall of the plasma processing chamber 10 is provided on the side wall 10a and the ceiling wall. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path (first flow path) 1110a, or a combination thereof. A first heat transfer fluid, such as brine or gas, supplied from a first heat transfer fluid supply unit 51 flows through the flow path 1110a. The first heat transfer fluid supply unit 51 supplies the first heat transfer fluid, whose temperature has been adjusted to a predetermined temperature, to the flow path 1110a. The first heat transfer fluid discharged from the flow path 1110a circulates through the first heat transfer fluid supply unit 51. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0018] The substrate support 11 also includes a cylindrical portion (trap portion) 113 and a cover ring 114. The cylindrical portion 113 is disposed within the plasma processing chamber 10, and is disposed below and to the side of the main body 111. The cylindrical portion 113 is formed of a material with good thermal conductivity. The cylindrical portion 113 is also preferably formed of an insulating material. The cover ring 114 is formed of an insulating material such as quartz or ceramic. The cover ring 114 is disposed between the main body 111 and the cylindrical portion 113, and electrically insulates the main body 111 from the cylindrical portion 113.

[0019] A flow path (second flow path) 113a is formed in the cylindrical portion 113. A second heat transfer fluid such as brine or gas supplied from a second heat transfer fluid supply unit 52 flows through the flow path 113a. The second heat transfer fluid supply unit 52 supplies the second heat transfer fluid, the temperature of which has been adjusted to a predetermined temperature, to the flow path 113a. The second heat transfer fluid discharged from the flow path 113a circulates through the second heat transfer fluid supply unit 52.

[0020] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0021] A flow path (third flow path) 13d is formed in the shower head 13. A third heat transfer fluid such as brine or gas supplied from a third heat transfer fluid supply unit 53 flows through the flow path 13d. The third heat transfer fluid supply unit 53 supplies the third heat transfer fluid, the temperature of which has been adjusted to a predetermined temperature, to the flow path 13d. The third heat transfer fluid discharged from the flow path 13d circulates through the third heat transfer fluid supply unit 53.

[0022] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0023] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0024] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0025] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0026] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0027] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0028] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0029] A baffle plate 16 is provided between the cylindrical portion 113 and the sidewall 10a of the plasma processing chamber 10. The baffle plate 16 is formed by forming a corrosion-resistant film on the surface of a member made of, for example, aluminum. The corrosion-resistant film may be a film made of ceramics such as yttrium oxide. The baffle plate 16 has a plurality of through-holes. Gas in the plasma processing space 10s passes through the through-holes of the baffle plate 16 and is exhausted by the exhaust system 40 via the gas exhaust port 10e.

[0030] Next, an example of the operation of the plasma processing apparatus 1 will be described with reference to Figures 4 to 7. Figure 4 is a flowchart showing an example of the operation of the plasma processing apparatus 1.

[0031] In step S101, the control unit 2 performs plasma processing on the substrate W. Fig. 5 is an example of a diagram illustrating the state of the plasma processing chamber 10 during plasma processing.

[0032] Here, the substrate W is placed on the substrate support 11. Then, the control unit 2 controls the gas supply unit 20 to supply a process gas into the plasma processing space 10s. The control unit 2 also controls the plasma generation unit 12 (RF power supply 31) to generate a plasma P of the process gas in the plasma processing space 10s and perform a desired process (etching process, film formation process, etc.) on the substrate W. For example, in a plasma etching process, the plasma P is generated in the plasma processing space 10s, and the substrate W is etched using ions in the plasma P.

[0033] At this time, heat from the plasma P is input to the substrate W and the substrate support 11. To process this heat input, the control unit 2 controls the first heat transfer fluid supply unit 51 to supply the first heat transfer fluid at the first temperature T1 to the flow path 1110a of the substrate support 11.

[0034] Furthermore, reaction by-products are generated during plasma processing. These reaction by-products are deposited on the wall surfaces of the plasma processing chamber 10, and then the deposited reaction by-products are peeled off from the wall surfaces, etc. The peeled particles fall onto the substrate W being processed, which may affect the characteristics of the semiconductor device formed on the substrate W.

[0035] In order to prevent reaction by-products from adhering to the sidewall 10a and ceiling wall of the plasma processing chamber 10, the control unit 2 operates the heater 15 to heat the sidewall 10a and ceiling wall. This makes the temperatures of the sidewall 10a and ceiling wall higher than the temperature of the substrate support unit 11 (the temperature of the substrate W). This prevents deposition (adhesion) of reaction by-products that affect the temperature.

[0036] Furthermore, the control unit 2 controls the second heat transfer fluid supply unit 52 to supply the second heat transfer fluid at the second temperature T2 to the flow path 113a of the cylindrical portion 113. Here, the second temperature T2 of the second heat transfer fluid is lower than the temperature of the side wall 10a heated by the heater 15. As a result, the reaction by-products 900 are selectively deposited on the wall surface of the cylindrical portion 113, rather than on the side wall 10a heated by the heater 15. In this way, the cylindrical portion 113 to which the second heat transfer fluid at the second temperature T2 is supplied functions as a trap that adsorbs (traps) the reaction by-products 900.

[0037] Furthermore, the second temperature T2 of the second heat transfer fluid is preferably lower than the first temperature T1 of the first heat transfer fluid supplied to the flow path 1110a of the substrate support 11. As a result, reaction by-products 900 are selectively deposited on the wall surface of the cylindrical portion 113 relative to the substrate W and the substrate support 11.

[0038] Then, when predetermined cleaning start conditions (for example, the number of processed substrates W, the accumulated time of plasma processing, etc.) are satisfied, a cleaning process is started to remove the reaction by-products 900 from the wall surface of the cylindrical portion (trap portion) 113. The cleaning process includes a condensation process (S102) and a cleaning process (S103).

[0039] In step S102, the control unit 2 performs a condensation treatment on the plasma processing chamber 10. Fig. 6 is an example of a diagram illustrating the state of the plasma processing chamber 10 during the condensation treatment.

[0040] In this example, a substrate W (dummy substrate) is placed on the substrate support member 11. The control unit 2 controls the gas supply unit 20 to supply a water (H2O)-containing gas 800 into the plasma processing space 10s. The control unit 2 also controls the second heat transfer fluid supply unit 52 to supply a second heat transfer fluid at a third temperature T3 to the flow path 113a of the cylindrical portion 113. The third temperature T3 of the second heat transfer fluid is a temperature (e.g., 0°C or lower) lower than the temperature at which water (H2O) solidifies (condenses). As a result, the water (H2O)-containing gas 800 supplied from the shower head 13 into the plasma processing chamber 10 condenses (liquefied water-containing gas) on the wall surface of the cylindrical portion 113 and then solidifies (solidified water-containing gas). As a result, reaction by-products 900 and ice (solidified water-containing gas) 910 accumulate on the wall surface of the cylindrical portion 113.

[0041] In step S103, the control unit 2 performs a cleaning process on the plasma processing chamber 10. Figure 7 is an example of a diagram illustrating the state of the plasma processing chamber 10 during the cleaning process.

[0042] Here, following step S102, a substrate W (dummy substrate) is placed on the substrate support member 11. Then, the control unit 2 controls the second heat transfer fluid supply unit 52 to supply the second heat transfer fluid at a fourth temperature T4 to the flow path 113a of the cylindrical member 113. Here, the fourth temperature T4 of the second heat transfer fluid is a temperature (e.g., 0°C or higher) higher than the temperature at which water (H2O) liquefies (melts). As a result, the ice (solidified water-containing gas) 910 deposited on the wall surface of the cylindrical member 113 melts and becomes liquid, and the reaction by-products 900 dissolve in the liquid. Then, the liquid 915 containing the reaction by-products is discharged from the plasma processing chamber 10.

[0043] In this way, in the plasma processing (S101), by adsorbing the reaction by-products 900 onto the wall surface of the cylindrical portion (trap portion) 113, it is possible to prevent the reaction by-products 900 from adhering to the side wall 10a, ceiling wall, etc. of the plasma processing chamber 10. Furthermore, by the condensation processing (S102) and the cleaning processing (S103), the reaction by-products 900 adsorbed onto the wall surface of the cylindrical portion (trap portion) 113 can be discharged from the plasma processing chamber 10 as a liquid 915 containing the reaction by-products dissolved therein. In other words, the inside of the plasma processing chamber 10 can be cleaned without opening the plasma processing chamber 10.

[0044] Furthermore, in the condensation process (S102), by solidifying water (H2O), a large amount of water (ice) can be held on the wall surface of the cylindrical portion 113. Then, in the cleaning process (S103), by liquefying a large amount of ice in a short time, the wall surface of the cylindrical portion 113 can be washed with a large amount of water.

[0045] Furthermore, the cylindrical portion 113 serving as a trap is disposed below the substrate support surface (central region 111a) of the substrate support portion 11 and radially outward of the substrate support portion 11. This prevents the substrate support portion 11 from being contaminated by particles (reaction by-products) peeled off from the wall surface of the cylindrical portion 113 or liquid 915 containing dissolved reaction by-products that flows down from the wall surface of the cylindrical portion 113 during cleaning processing.

[0046] The plasma processing apparatus 1 is not limited to the configuration shown in Fig. 2. Fig. 8 is another example of a diagram for explaining an example of the configuration of the capacitively coupled plasma processing apparatus 1. Fig. 9 is another example of a horizontal cross-sectional view (cross-section BB in Fig. 8) of the plasma processing apparatus 1.

[0047] In the plasma processing apparatus 1 shown in FIG. 8, a trap section 115 is disposed radially outside the cylindrical section 113.

[0048] A flow path (second flow path) 115a is formed in the trap unit 115. A second heat transfer fluid such as brine or gas supplied from a second heat transfer fluid supply unit 52 flows through the flow path 115a. The second heat transfer fluid supply unit 52 supplies the second heat transfer fluid, the temperature of which has been adjusted to a predetermined temperature, to the flow path 115a. The second heat transfer fluid discharged from the flow path 115a circulates to the second heat transfer fluid supply unit 52.

[0049] Even with this configuration, by adsorbing reaction by-products 900 onto the wall surface of the wrap unit 115 in the plasma processing (S101), it is possible to prevent the reaction by-products from adhering to the side wall 10a, ceiling wall, etc. of the plasma processing chamber 10. Furthermore, by performing the condensation process (S102) and the cleaning process (S103), the reaction by-products adsorbed onto the wall surface of the trap unit 115 can be discharged from the plasma processing chamber 10 as a liquid containing the reaction by-products dissolved therein. In other words, the inside of the plasma processing chamber 10 can be cleaned without opening the plasma processing chamber 10.

[0050] The above-disclosed embodiments include, for example, the following aspects. (Appendix 1) a plasma processing chamber; a substrate support disposed within the plasma processing chamber; a gas inlet for introducing a gas into the plasma processing chamber; a trap unit provided in the plasma processing chamber for trapping reaction by-products; a first heat transfer fluid supply unit that supplies a first heat transfer fluid to a first flow path provided in the substrate support unit; a second heat transfer fluid supply unit that supplies a second heat transfer fluid to a second flow path provided in the trap unit; a control unit, The control unit (a) introducing a water-containing gas into the plasma processing chamber through the gas inlet and supplying a second heat transfer fluid to the second flow path at a temperature lower than a temperature at which the water-containing gas solidifies; (b) after the step (a), supplying a second heat transfer fluid having a temperature higher than the temperature at which the water-containing gas liquefies to the second flow path. Plasma processing equipment. (Appendix 2) The control unit (c) before the step (a), further performing a step of performing a plasma treatment on the substrate supported by the substrate support part; The step (c) supplying a first heat transfer fluid at a first temperature to the first flow path; supplying a second heat transfer fluid having a second temperature lower than the first temperature to the second flow path; 2. The plasma processing apparatus according to claim 1. (Appendix 3) a heater for heating a sidewall of the plasma processing chamber; The second temperature in the step (c) is lower than the temperature of the sidewall of the plasma processing chamber heated by the heater; 3. The plasma processing apparatus according to claim 2. (Appendix 4) the trap portion is disposed below a substrate support surface of the substrate support portion and radially outward of the substrate support portion. 4. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus. (Appendix 5) A cleaning method for a plasma processing apparatus including: a plasma processing chamber; a substrate support provided in the plasma processing chamber; a gas inlet configured to introduce a gas into the plasma processing chamber; a trap provided in the plasma processing chamber to trap reaction by-products; a first heat transfer fluid supplying unit configured to supply a first heat transfer fluid to a first flow path provided in the substrate support; and a second heat transfer fluid supplying unit configured to supply a second heat transfer fluid to a second flow path provided in the trapping unit, (a) introducing a water-containing gas into the plasma processing chamber through the gas inlet and supplying a second heat transfer fluid to the second flow path at a temperature lower than a temperature at which the water-containing gas solidifies; (b) after the step (a), supplying a second heat transfer fluid having a temperature higher than the temperature at which the water-containing gas liquefies to the second flow path, Cleaning method:

[0051] The above describes embodiments of the plasma processing system, but the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure as described in the claims. [Explanation of symbols]

[0052] 1. Plasma processing equipment 2. Control section 10 Plasma Processing Chamber 10a side wall 11 Substrate support 12 Plasma generation unit 13. Shower head 15 Heater 20 Gas supply unit 30 power supply 40 Exhaust System 51 First heat transfer fluid supply section 52 Second heat transfer fluid supply section 113 Cylindrical part (trap part) 113a flow path (second flow path) 1110a flow path (first flow path) 900 Reaction by-products 910 Ice 915 Liquid W substrate

Claims

1. a plasma processing chamber; a substrate support disposed within the plasma processing chamber; a gas inlet for introducing a gas into the plasma processing chamber; a trap unit provided in the plasma processing chamber for trapping reaction by-products; a first heat transfer fluid supply unit configured to supply a first heat transfer fluid to a first flow path provided in the substrate support unit; a second heat transfer fluid supply unit configured to supply a second heat transfer fluid to a second flow path provided in the trap unit; a control unit, The control unit (a) introducing a water-containing gas into the plasma processing chamber through the gas inlet and supplying a second heat transfer fluid to the second flow path at a temperature lower than a temperature at which the water-containing gas solidifies; (b) after the step (a), supplying a second heat transfer fluid having a temperature higher than the temperature at which the water-containing gas is liquefied to the second flow path. Plasma processing equipment.

2. The control unit (c) before the step (a), further performing a step of performing a plasma treatment on the substrate supported by the substrate support part; The step (c) supplying a first heat transfer fluid at a first temperature to the first flow path; supplying a second heat transfer fluid having a second temperature lower than the first temperature to the second flow path; The plasma processing apparatus according to claim 1 .

3. a heater for heating a sidewall of the plasma processing chamber; The second temperature in the step (c) is lower than the temperature of the sidewall of the plasma processing chamber heated by the heater; The plasma processing apparatus according to claim 2 .

4. the trap portion is disposed below a substrate support surface of the substrate support portion and radially outward of the substrate support portion.

4. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus.

5. A cleaning method for a plasma processing apparatus including: a plasma processing chamber; a substrate support provided in the plasma processing chamber; a gas inlet for introducing a gas into the plasma processing chamber; a trap provided in the plasma processing chamber for trapping reaction by-products; a first heat transfer fluid supplying unit for supplying a first heat transfer fluid to a first flow path provided in the substrate support; and a second heat transfer fluid supplying unit for supplying a second heat transfer fluid to a second flow path provided in the trapping unit, (a) introducing a water-containing gas into the plasma processing chamber through the gas inlet and supplying a second heat transfer fluid to the second flow path at a temperature lower than a temperature at which the water-containing gas solidifies; (b) after the step (a), supplying a second heat transfer fluid having a temperature higher than the temperature at which the water-containing gas is liquefied to the second flow path, Cleaning method:

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