Heating device having electrostatic adsorption function

Abstract

To provide a heating device having an electrostatic adsorption function and having high insulation performance with respect to a power supply for electrostatic adsorption.SOLUTION: A heating device having an electrostatic adsorption function includes at least: a support substrate; an electrostatic adsorption electrode and a heat generating layer formed on the support substrate; and an insulator layer formed on the electrostatic adsorption electrode and the heat generating layer. The heating device has a terminal part for supplying power from a surface opposite to a wafer mounting surface, and supplies power to the electrostatic adsorption electrode on the wafer mounting surface through a hole or a side surface present at a position different from a place where the terminal part is fixed.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a heating device with an electrostatic adsorption function, and more particularly to a wafer heating device with an electrostatic adsorption function that is suitable for use in a semiconductor wafer heating process in a semiconductor device manufacturing process that includes a temperature rise step. [Background technology]

[0002] In recent semiconductor device manufacturing processes, heating devices with electrostatic adsorption functions are used to electrostatically adsorb and support wafers in molecular beam epitaxy, CVD, sputtering, etching, ion implantation, etc. As the temperatures of these processes increase, the materials used for these heating devices with electrostatic adsorption functions are shifting from resin to ceramics (see Patent Documents 1 and 2), and in high-temperature processes of 200°C or higher, ceramic-integrated wafer heating devices that use a ceramic thin film as a heat generating layer are being used (see, for example, Patent Document 3).

[0003] One heating device with electrostatic adsorption function used in such high-temperature processes is an electrostatic chuck made of pyrolytic boron nitride and pyrolytic carbon. This is an integrated resistance heating type multilayer heating device with electrostatic adsorption function, in which an insulating layer made of pyrolytic boron nitride (hereinafter sometimes referred to as "PBN") is formed by thermal chemical vapor deposition (thermal CVD) on a (supporting) substrate made of carbon or a carbon composite material, and a conductive layer made of pyrolytic graphite, also formed by thermal CVD, is processed and bonded to a heater pattern, and the heater pattern is further covered with a dense layered protective film made of pyrolytic boron nitride or the like (see Patent Documents 4 and 5).

[0004] This resistance heating type electrostatic adsorption heater is highly pure, chemically stable, and resistant to thermal shock, and is therefore used in a variety of fields where rapid temperature rise and fall is required. For example, it is widely used in the field of semiconductor wafer manufacturing, specifically in processes in which semiconductor wafers or the like are processed one by one at a time while the temperature is changed in stages. This multi-layered heating device with electrostatic adsorption function is manufactured entirely by the CVD method as described above, so there are no grain boundaries, and therefore no outgassing, and it is widely used because it does not adversely affect the process when heated in a vacuum. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 52-67353 [Patent Document 2] Japanese Patent Application Publication No. 59-124140 [Patent Document 3] Japanese Unexamined Patent Publication No. 4-124076 [Patent Document 4] Japanese Patent Application Publication No. 5-129210 [Patent Document 5] Japanese Patent Application Publication No. 7-10665 Summary of the Invention [Problem to be solved by the invention]

[0006] In recent years, high chucking force has been required in high-temperature processes above 200°C, and high voltages of around DC 500V to DC 2KV are applied to electrostatic chucks. However, applying high voltages in high-temperature environments makes dielectric breakdown more likely to occur. Note that 23 in Figure 4 indicates the position where dielectric breakdown is likely to occur. In particular, when the electrostatic chuck voltage is applied from the heater surface opposite to the chuck surface or from the stepped portion of the counterbore, there is a problem in that a current leakage is likely to occur between the chuck voltage supply portion and the screw hole portion for fixing the chuck voltage supply portion. SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a heating device having an electrostatic attraction function and high insulating performance against the electrostatic attraction power supply. [Means for solving the problem]

[0007] In order to solve the above-mentioned problems, the present inventors investigated the cause of the dielectric breakdown that occurs in the chuck voltage supply portion of the heater surface, and as a result, they discovered that the PBN film thickness in the counterbore portion for terminal fixation is significantly thin.

[0008] [1] A heating device having an electrostatic adsorption function, comprising at least a support substrate, an electrostatic adsorption electrode and a heat generating layer formed on the support substrate, and an insulator layer formed on the electrostatic adsorption electrode and the heat generating layer, A heating device with an electrostatic adsorption function that has a terminal part that supplies power from the surface opposite the wafer mounting surface, and supplies power to an electrostatic adsorption electrode on the wafer mounting surface through a hole or side surface located in a position different from where the terminal part is fixed. [2] The heating device with electrostatic adsorption function described in [1] above, wherein the size of the hole is larger than the hole for fixing the terminal portion. [3] The heating device with electrostatic adsorption function according to [1] or [2] above, wherein carbon, insulating ceramics, or carbon coated with boron nitride is embedded inside the hole. [4] The electrostatic attraction electrode and / or the heat generating layer and the power supply part provided in the hole and / or the side are made of pyrolytic graphite formed by chemical vapor deposition containing boron and / or boron carbide in a boron concentration range of 0.001 to 30 wt %, and the insulator layer is 10 6 ~10 15 The heating device with electrostatic adsorption function according to any one of the above [1] to [3], which has an electrical resistivity of Ωcm. [5] A heating device with electrostatic adsorption function according to any one of [1] to [4] above, wherein the electrostatic adsorption electrode, the heat generating layer, and the power supply part provided in the hole and / or the side surface are formed via a protective layer formed on the support substrate. [6] The heating device with electrostatic adsorption function according to [5] above, wherein the protective layer is made of any one of silicon nitride, boron nitride, aluminum nitride, and pyrolytic boron nitride. [7] The heating device with electrostatic adsorption function according to any one of [1] to [6] above, wherein the support substrate is made of any one of a silicon nitride sintered body, a boron nitride sintered body, a mixed sintered body of boron nitride and aluminum nitride, an alumina sintered body, an aluminum nitride sintered body, and graphite. [8] A heating device with electrostatic adsorption function according to any one of [1] to [7] above, wherein the insulator layer is made of any one of aluminum nitride, boron nitride, a mixture of aluminum nitride and boron nitride, pyrolytic boron nitride, pyrolytic boron nitride with carbon added, and pyrolytic boron nitride with carbon and silicon added. [9] The heating device with electrostatic adsorption function according to any one of the above [1] to [8], wherein the insulating layer is formed by chemical vapor deposition. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a heating device having an electrostatic attraction function and high insulating performance against electrostatic attraction power supply. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a conceptual diagram of a heating device having an electrostatic adsorption function manufactured in Example 1. [Figure 2] FIG. 10 is a conceptual diagram of a heating device having an electrostatic adsorption function manufactured in Example 2. [Figure 3] FIG. 10 is a conceptual diagram of a heating device having an electrostatic adsorption function manufactured in Example 3. [Figure 4] FIG. 1 is a conceptual diagram of a heating device having an electrostatic adsorption function manufactured in Comparative Example 1. [Figure 5] FIG. 10 is a conceptual diagram of a heating device having an electrostatic adsorption function manufactured in Comparative Example 2. [Figure 6] FIG. 2 is a top view of the heating device. DETAILED DESCRIPTION OF THE INVENTION

[0011] The heating device of the present invention is a heating device having an electrostatic adsorption function for holding and fixing a semiconductor wafer, which is an object to be heated, while heating it, and is used in a CVD apparatus or sputtering apparatus in the manufacturing process of semiconductor devices, or an etching apparatus for etching a thin film that is formed.

[0012] The heating device of the present invention has an electrostatic attraction function including at least a support substrate, an electrostatic attraction electrode and a heat generating layer formed on the support substrate, and an insulator layer formed on the electrostatic attraction electrode and the heat generating layer, and is characterized by having a terminal part for supplying power from the surface opposite to the wafer mounting surface, and supplying power to the electrostatic attraction electrode on the wafer mounting surface through a hole or side surface located at a position different from the position where the terminal part is fixed. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0013] [Heating device with electrostatic adsorption function] Fig. 1 shows an example of a heating device with an electrostatic adsorption function according to the present invention. In the heating device with an electrostatic adsorption function (hereinafter sometimes simply referred to as a "heating device") 1, an electrostatic adsorption electrode 4 and a heat generating layer 5 are formed via a protective layer 6 formed on a disk-shaped supporting substrate 2, and an insulating layer 3 is further formed on the electrostatic adsorption electrode 4 and the heat generating layer 5. The electrostatic attraction electrode 4 is formed on the wafer mounting surface side, and the heat generating layer 5 and heat generating layer power supply terminals (not shown) are formed on the opposite side. The external power supply, electrostatic attraction power supply terminal 7, and heating layer power supply terminal are each connected by separate conductive fixing terminal bolts 8. The electrostatic attraction power supply terminal 7 and heating layer power supply terminal are provided on the electrostatic attraction electrode 4 and heating layer 5, respectively, and electricity is supplied through these terminals. Dotted arrow 9 indicates the power supply route from the electrostatic attraction power supply terminal 7 on the heating layer surface 22 to the electrostatic attraction electrode 4 on the wafer-mounting surface 21, and the conductive layer to which power is supplied is referred to as power supply part 11.

[0014] When a semiconductor wafer is heated, the wafer is attracted and fixed onto the insulating layer 3 on the front side of the support substrate 2 by the electrostatic attraction electrode 4, and is heated by the conductive heating layer 5 on the back side of the support substrate 2. 1 has a hole with an inner diameter D1 in which a fixing terminal bolt 8 is disposed. The fixing terminal bolt 8 is used to fix an electrostatic attraction power supply terminal 7. The heating apparatus of the present invention has an electrostatic attraction power supply terminal 7 on the side opposite to the side on which the wafer is placed. When power is supplied to the terminal, the supplied electricity flows through a power supply section 11 along a power supply route 9.

[0015] Furthermore, the heating device of the present invention preferably has a hole with an inner diameter D2 in a part of the support substrate 2 separate from the hole, with the relationship D2 > D1. That is, the size of the hole with inner diameter D2 is preferably larger than the hole (inner diameter D1) for fixing the power supply terminal. Specifically, as shown in Fig. 6, which shows the heating device 1 from above, a preferred embodiment has a hole with an inner diameter D1 and a hole with an inner diameter D2 arranged therein.

[0016] In conventional heating devices, current is supplied from electrostatic attraction power supply terminal 7 through a power supply route that runs along a hole with an inner diameter D1 (see FIG. 4). Alternatively, electrostatic attraction power supply terminal 7 is disposed below the head of the upper bolt of fixing terminal bolt 8, and power is supplied from this power supply terminal (see FIG. 5). However, with such a conventional power supply method, insulation breakdown is likely to occur in the hole with an inner diameter D1. In contrast, in the heating device of the present invention, power is supplied to the electrostatic attraction electrode 4 on the wafer mounting surface through a hole or side surface located at a position different from the location where the power supply terminal is fixed, so insulation breakdown is less likely to occur (Figures 1 to 3).

[0017] Furthermore, it is preferable that the hole with the inner diameter D2 is filled with carbon, insulating ceramics, or carbon coated with boron nitride. By adopting such an embodiment, heat is easily cooled without being directly transferred to the wafer, and the hole (space) is eliminated, making it easier to make the temperature of the wafer-mounting surface more uniform. Each component of the heating device 1 of the present invention will be specifically described below.

[0018] <Supporting base material> Although there are no particular limitations on the material that constitutes the support substrate 2, it is preferably made of any one of silicon nitride sintered body, boron nitride sintered body, mixed sintered body of boron nitride and aluminum nitride, alumina sintered body, aluminum nitride sintered body, and graphite. These materials have stable physical properties even in the medium to high temperature range of 500 to 800°C, and graphite is particularly desirable because it is stable up to high temperatures of 2000°C or higher. The shape of the support substrate 2 is not particularly limited, and may be, for example, a disk, a cylinder, or a disk or cylinder with convex or concave portions.

[0019] <Protective layer> The protective layer 6 formed on the support substrate 2 prevents impurities, gases, etc. contained in the support substrate 2 from affecting the subsequent manufacturing process. Such a protective layer 6 is essential for ensuring insulation when the support substrate 2 is made of graphite, for example, and is also necessary for preventing oxidation. On the other hand, if the support substrate 2 is an insulator, the protective layer does not necessarily have to be formed, but it is preferable to form the protective layer 6 because it can prevent contamination by impurities, etc., as described above.

[0020] The material for the protective layer 6 is preferably one that is stable up to high temperatures, and examples thereof include silicon nitride, boron nitride, pyrolytic boron nitride, and aluminum nitride. Furthermore, if the protective layer 6 is too thick, it may peel off due to the difference in thermal expansion with the supporting substrate, and if it is too thin, impurities, gases, etc. may permeate through pinholes, which may adversely affect the subsequent manufacturing process. From these viewpoints, the thickness of the protective layer 6 is preferably in the range of 10 to 500 μm, and more preferably 30 to 300 μm.

[0021] <Electrostatic attraction electrode and heat generating layer> The electrostatic attraction electrode 4, the heat generating layer 5, and the power supply part 11 are formed via a protective layer 6 formed on the support substrate. The material is preferably pyrolytic graphite containing boron and / or boron carbide in a boron concentration range of 0.001 to 30 wt %. The electrostatic attraction electrode 4, the heat generating layer 5, and the power supply part 11 thus formed have an anchor effect, which ensures good adhesion and bonding of the insulating layer 3 formed thereon, preventing peeling of the insulating layer 3 even when the temperature is repeatedly increased or decreased. Furthermore, pyrolytic graphite containing boron and / or boron carbide within the above range has the property of reducing the temperature dependence of resistivity, and therefore, using this in the heat generating layer has the advantage of improving temperature controllability. If the boron concentration is 0.001% by weight or more, a sufficient anchoring effect is obtained, while if the boron concentration is 30% by weight or less, excessive grain growth is prevented, sufficient film formation is achieved, and the film can fully function as an electrostatic attraction electrode or a heat generating layer.

[0022] Although there are no particular limitations on the thickness of the electrostatic attraction electrode 4, the heat generating layer 5, and the power supply part 11, each is preferably in the range of 10 to 500 μm, and more preferably in the range of 30 to 300 μm. With the electrostatic attraction electrode and the heat generating layer having such thickness, an object to be heated, such as a wafer, can be electrostatically attracted and heated in an appropriate manner.

[0023] <Insulator layer> The insulating layer 3 formed on the electrostatic attraction electrode 4 and the heat generating layer 5 is 10 6 ~10 15 It is preferable that the insulating layer has an electrical resistivity of Ωcm. If an insulating layer having an electrical resistivity in this range is formed, the resistance value will be appropriate in the medium to high temperature range of 500°C to 800°C, damage to the device due to leakage current will not occur, and a sufficient electrostatic chucking force will be obtained. Such an insulator layer 3 can preferably be made of any of aluminum nitride, boron nitride, a mixture of aluminum nitride and boron nitride, pyrolytic boron nitride, pyrolytic boron nitride with carbon added, and pyrolytic boron nitride with carbon and silicon added.

[0024] The thickness of the insulating layer 3 is not particularly limited, but is preferably in the range of 50 to 500 μm, and more preferably in the range of 70 to 300 μm. Generally, when an insulating layer having a thickness of 50 to 500 μm is formed, if the bonding surfaces of the electrostatic attraction electrode or the heat generating layer are smooth, the layer will easily peel off due to the difference in thermal expansion coefficient. However, in the present invention, the electrostatic attraction electrode 4, the heat generating layer 5, and the power supply part 11, which have a strong anchoring effect, are formed, so that the insulating layer 3 is prevented from peeling off even when the temperature is repeatedly raised and lowered. Furthermore, by making the insulating layer have the above thickness, it is possible to obtain a sufficient insulating power and also obtain a suitable level of electrical resistivity even in the medium to high temperature range of 500 to 800° C., thereby maintaining a sufficient electrostatic adsorption force.

[0025] <Method of manufacturing the heating device> The method for manufacturing the heating device having an electrostatic adsorption function according to the present invention is not particularly limited, but it can be suitably manufactured by chemical vapor deposition. For example, to form an electrostatic attraction electrode and a heat generating layer, methane gas is reacted under conditions of 1000 to 2500°C and 1 to 10 Torr, and boron halide is introduced into the same reaction chamber at a boron concentration of 0.001 to 30 wt % to form a pyrolytic graphite layer on a support substrate made of graphite having a protective layer on its surface. This pyrolytic graphite layer is then processed into the pattern of electrostatic attraction electrode 4 on the front side of the substrate and the pattern of heat generating layer 5 on the back side. In this way, when electrostatic attraction electrode 4 and heat generating layer 5 made of pyrolytic graphite containing boron and / or boron carbide in a boron concentration ranging from 0.001 to 30 wt % are formed by chemical vapor deposition, minute irregularities are formed on the surface, which can exhibit an excellent anchoring effect and effectively prevent peeling of insulator layer 3 formed thereon.

[0026] The protective layer and the insulating layer are also preferably formed by chemical vapor deposition. Each layer formed by chemical vapor deposition has high purity and is suppressed from peeling and particle generation. As described above, the protective layer may not be essential depending on the supporting substrate. In this case, the electrostatic attraction electrode 4, the heat generating layer 5, and the power supply part 11 may be formed directly on the supporting substrate 2 as shown in FIG. 2, and the other configurations may be the same as those shown in FIG. 1 to provide a heating device with an electrostatic attraction function.

[0027] In the heating device with electrostatic attraction function of the present invention, the electrostatic attraction electrode 4, the heat generating layer 5, and the power supply part 11 exert an anchoring effect, and the insulating layer 3 formed thereon does not peel off. In particular, by forming the electrostatic attraction electrode and the heat generating layer from pyrolytic graphite containing boron and / or boron carbide in a boron concentration ranging from 0.001 to 30 wt %, a stronger anchoring effect is exerted and peeling of the insulating layer is suppressed, which is preferable.

[0028] Furthermore, the heating layer 5 and the power supply part 11 have small temperature-dependence of resistivity, resulting in excellent temperature controllability. This means that the temperature distribution is excellent, the thermal shock resistance is excellent, and the insulator layer 3 does not peel off even when repeatedly heated and cooled. Furthermore, even in the medium-high temperature range of 500 to 800°C, the resistance is adequate and the electrostatic adsorption force is sufficient. Furthermore, the device is not damaged by leakage current, and no dielectric breakdown occurs. This heating device has an electrostatic adsorption function that allows stable use even when the temperature is rapidly raised and lowered. Therefore, if this heating device is used to heat wafers in device manufacturing processes, the device yield will improve and it will be able to be used stably for a long period of time. [Example]

[0029] The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited to these. Note that the present invention is not limited to the embodiments described herein. The embodiments are merely examples, and any embodiment that has substantially the same configuration as the technical idea described in the claims of the present invention and exhibits similar effects is included within the technical scope of the present invention. For example, the shapes of the supporting substrate, the electrostatic attraction electrode, and the heat generating layer are not limited to those shown in FIGS.

[0030] Example 1 A graphite substrate with a diameter of 200 mm and a thickness of 15 mm was prepared, and a protective layer of pyrolytic boron nitride was formed on the substrate by reacting ammonia with boron trichloride under conditions of 1800°C and 100 Torr. Next, methane gas was pyrolyzed on the protective layer under conditions of 2200°C and 5 Torr, and boron halide (boron trichloride) was introduced into the same reaction chamber at a boron concentration of 0.001 to 30 wt% to form a 100 μm-thick pyrolytic graphite layer containing a mixture of boron and boron carbide. The front side of this pyrolytic graphite layer was processed into an electrode pattern to serve as an electrostatic attraction electrode, and the back side was processed into a heater pattern to serve as a heat-generating layer. In this case, the electrode pattern from the electrostatic attraction power supply terminal to the electrostatic attraction electrode was formed via a hole with a larger diameter than the electrostatic attraction power supply terminal, rather than passing through the inside of the hole in the electrostatic attraction power supply terminal as shown in Figure 1. Then, ammonia, boron trichloride, and methane were reacted on both surfaces at 1600°C and 5 Torr to form a 200 μm thick carbon-containing pyrolytic boron nitride insulator layer. This insulator layer had an electrical resistivity of 10 8 ~10 13 It was Ωcm.

[0031] The wafer heating device fabricated as described above was heated from 100°C to 1000°C for 1 minute, and then held at 1000°C for 10 minutes. A voltage of ±1 kV was then applied to the electrostatic adsorption electrode for 2 minutes, and the temperature was then raised and lowered 10,000 times at a rate of 5 minutes from 1000°C to 100°C (heating and cooling test). No dielectric breakdown or peeling was observed at the electrodes or at the junctions between the heating layer and the insulator layer, and the temperature distribution on the wafer at 500°C remained unchanged at ±10°C.

[0032] Example 2 2, a heating device with an electrostatic attraction function was fabricated in the same manner as in Example 1, except that an insulated carbon cylinder coated with PBN was inserted into a hole with a larger diameter than the electrostatic attraction power supply terminal. That is, an insulating ceramic was inserted into a large-diameter hole (inner diameter D2) located at a position different from the position where the power supply terminal was fixed, and power was supplied to the electrostatic attraction electrode on the wafer mounting surface. When the obtained heating device was subjected to an experiment similar to that of Example 1, no dielectric breakdown or peeling was observed at the joints between the electrodes and the heat generating layer and the insulator layer, and the temperature distribution on the wafer at 500°C remained unchanged at ±8°C.

[0033] Example 3 A heating device with an electrostatic attraction function was fabricated in the same manner as in Example 1, except that the electrode pattern from the electrostatic attraction power supply terminal to the electrostatic attraction electrode was formed via the side surface of the base material, as shown in Fig. 3. In other words, power was supplied to the electrostatic attraction electrode on the wafer-mounting surface through the side surface of the support base material, which was a position different from the position where the power supply terminal was fixed. When the same experiment as in Example 1 was conducted on the obtained heating device, no dielectric breakdown or peeling was observed at the joints between the electrodes and the heat generating layer and the insulator layer, and the temperature distribution on the wafer at 500°C did not change beyond ±10°C.

[0034] (Comparative Example 1) As shown in FIG. 4, a wafer heating device having an electrostatic attraction function was fabricated in the same manner as in Example 1, except that an electrode pattern was formed so that power could be supplied from the electrostatic attraction power supply terminals on the heater surface to the electrostatic attraction electrodes via the inside of the holes for the electrostatic attraction power supply terminals. When the obtained heating device was subjected to the same test as in Example 1, the temperature distribution on the wafer at 500°C before the test was ±10°C, but in the temperature rise / fall test, insulation breakdown occurred after about 500 cycles, and voltage could no longer be applied to the electrostatic attraction electrode, making it impossible to attract the wafer.

[0035] (Comparative Example 2) As shown in FIG. 5, a wafer heating device having an electrostatic attraction function was fabricated in the same manner as in Example 1, except that an electrostatic attraction power supply terminal 7 was formed inside the counterbore and an electrode pattern was formed from the electrostatic attraction power supply terminal to the electrostatic attraction electrode. When the obtained heating device was subjected to the same test as in Example 1, the temperature distribution on the wafer at 500°C before the test was ±10°C, but in the temperature rise / fall test, insulation breakdown occurred after about 500 cycles, and voltage could no longer be applied to the electrostatic attraction electrode, making it impossible to attract the wafer. [Industrial Applicability]

[0036] According to the present invention, since power is not supplied to the hole and the counterbore where the fixing terminal bolt is placed, the power failure due to insulation breakdown is avoided. Furthermore, the electrostatic attraction electrode is less likely to peel off inside the hole and on the side, the anchoring effect of the electrostatic attraction electrode and the heat-generating layer is excellent, and the boron added to the electrostatic attraction electrode and the heat-generating layer chemically bonds with the nitrogen in the protective layer and the insulator layer, thereby strengthening the bond and eliminating the problem of peeling off of the insulator layer. Furthermore, even in the medium- to high-temperature range of 500 to 800°C, the resistance is moderate and sufficient electrostatic attraction force is maintained, and a heating device with electrostatic attraction function that does not suffer from device damage due to leakage current can be obtained. [Explanation of symbols]

[0037] 1. Heating device with electrostatic adsorption function 2 Supporting base material 3. Insulator layer 4. Electrostatic adsorption electrode 5 Heat generating layer 6 Protective layer 7. Electrostatic adsorption power supply terminal 8 Fixed terminal bolt 9 Power supply route from the electrostatic adsorption power supply terminal to the electrostatic adsorption electrode 10 Carbon substrate or PBN-coated carbon for hole embedding 11 Power supply unit 21 wafer placement surface 22 Heat generating layer surface 23 Dielectric breakdown

Claims

1. A heating device having an electrostatic attraction function, comprising at least a support substrate, an electrostatic attraction electrode and a heat generating layer formed on the support substrate, and an insulator layer formed on the electrostatic attraction electrode and the heat generating layer, A heating device with an electrostatic adsorption function that has a terminal part that supplies power from the surface opposite the wafer mounting surface, and supplies power to an electrostatic adsorption electrode on the wafer mounting surface through a hole or side surface located in a position different from where the terminal part is fixed.

2. 2. The heating device with electrostatic adsorption function according to claim 1, wherein the size of the hole is larger than the size of the hole for fixing the terminal portion.

3. 3. The heating device with electrostatic adsorption function according to claim 1, wherein carbon, insulating ceramics, or carbon coated with boron nitride is embedded inside the hole.

4. The electrostatic attraction electrode and / or the heat generating layer and the power supply part provided in the hole and / or the side surface are made of pyrolytic graphite formed by a chemical vapor deposition method containing boron and / or boron carbide in a range of 0.001 to 30 wt % in terms of boron concentration, and the insulator layer is 10 ６ ~10 １５ 3. The heating device with electrostatic attraction function according to claim 1, wherein the heating device has an electrical resistivity of Ωcm.

5. 3. The heating device with electrostatic attraction function according to claim 1, wherein the electrostatic attraction electrode and / or the heat generating layer and the power supply parts provided in the hole and / or the side surface are formed via a protective layer formed on the support base material.

6. 6. The heating device having an electrostatic attraction function according to claim 5, wherein the protective layer is made of any one of silicon nitride, boron nitride, aluminum nitride, and pyrolytic boron nitride.

7. 3. The heating device with electrostatic adsorption function according to claim 1, wherein the support substrate is made of any one of a silicon nitride sintered body, a boron nitride sintered body, a mixed sintered body of boron nitride and aluminum nitride, an alumina sintered body, an aluminum nitride sintered body, and graphite.

8. 3. The heating device with electrostatic adsorption function according to claim 1 or 2, wherein the insulator layer is made of any one of aluminum nitride, boron nitride, a mixture of aluminum nitride and boron nitride, pyrolytic boron nitride, pyrolytic boron nitride with carbon added, and pyrolytic boron nitride with carbon and silicon added.

9. 3. The heating device with electrostatic attraction function according to claim 1, wherein the insulating layer is formed by chemical vapor deposition.

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