Film deposition apparatus, control device of film deposition apparatus, and film deposition method

Abstract

To provide a film deposition method capable of improving an adhesion between a substrate and an adhesion film without deteriorating a productivity.SOLUTION: A film deposition method includes: a first step where a material having a large getter effect against a gas or water(H2O) remaining inside the process chamber is deposited inside a process chamber 50; a second step where after the first step, the process chamber is evacuated for a predetermined time; a third step where after the second step, a material having a large getter effect against a gas or water(H2O) remaining inside the process chamber is deposited; a fourth step where after the third step, the inside of the process chamber is evacuated for a predetermined time; an adhesion film formation step where an adhesion film is formed on a substrate S arranged in the process chamber after the fourth step; and a seed film formation step where after the adhesion film formation step, a seed film is formed on the adhesion film.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a film forming apparatus, a control device for the film forming apparatus, and a film forming method for forming a film on the surface of a substrate such as a printed circuit board or a film substrate. [Background technology]

[0002] In the mounting process of mounting electronic components on substrates such as printed circuit boards and film substrates, an adhesion layer that serves as a base for wiring connected to the electronic components and a seed layer for forming the wiring by plating are formed. For example, plating or sputtering is used to form each layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 7-310180 [Patent Document 2] Japanese Patent Application Publication No. 2-50959 Summary of the Invention [Problem to be solved by the invention]

[0004] For example, Patent Document 1 describes a method for forming a thin film in a low-pressure rare gas environment, which comprises a gas exhaust / replacement step of exhausting the gas from a vacuum chamber by evacuation and then introducing a rare gas into the vacuum chamber, and a film formation step of depositing a thin film-forming substance onto an adherend in a rare gas environment, in order to form a thin film with excellent adhesion in a short time, and in which the gas exhaust / replacement step is carried out at least two times before the film formation step is carried out. However, in the thin film formation method described in Patent Document 1, hydrogen and oxygen resulting from water (H2O) gas are mixed into the interface between the adhesive film and the substrate and into the adhesive film itself, making it impossible to obtain sufficient adhesion between the adhesive film and the substrate.

[0005] Patent Document 2 describes a rare earth metal thin film deposition apparatus that, in order to deposit a pure rare earth metal thin film, installs in the vacuum chamber of a magnetron sputtering device a main cathode carrying a rare earth metal main target, a substrate held by a substrate holder positioned opposite the main target, and an auxiliary cathode with an active metal auxiliary target attached to a side of the substrate holder facing the inner wall of the chamber, and also installs an inert gas introduction pipe in the vacuum chamber wall. However, in the film formation apparatus described in Patent Document 2, the auxiliary cathode to which the active metal auxiliary target is attached is positioned beside the substrate and the substrate holder and faces the inner wall of the chamber, so it is insufficient as a getter to capture residual oxygen, nitrogen, etc. in spaces other than the inner wall of the chamber.

[0006] The present invention has been made in consideration of the above-mentioned problems of the conventional technology, and aims to provide a film forming apparatus, a control device for the film forming apparatus, and a film forming method that can improve the adhesion between a substrate and an adhesive film without reducing productivity. [Means for solving the problem]

[0007] In order to achieve the above object, the invention described in claim 1 is a film formation apparatus having a process chamber and a processing section provided in the process chamber for forming an adhesive film on a substrate, wherein the inner wall surface of the process chamber is formed of a material that has a large getter effect against gas or water (H2O) remaining in the process chamber. In order to achieve the above object, the invention of claim 5 provides a control device for a film forming apparatus having a process chamber, a processing section provided in the process chamber for forming an adhesive film on a substrate, an exhaust section capable of evacuating the process chamber, and a gas inlet section for introducing a gas for forming the adhesive film into the process chamber, wherein the control device has a storage section for storing a control program, and the control program includes a first step of forming a film in the process chamber of a substance having a large getter effect on gas or water (H2O) remaining in the process chamber, a second step of evacuating the process chamber for a predetermined time after the first step, and a second step of evacuating the process chamber for a predetermined time after the second step. a third step of forming a film of a substance having a large getter effect on gas or water (H2O) remaining in the process chamber in a process chamber, a fourth step of evacuating the process chamber for a predetermined time after the third step, and an adhesion film forming step of forming an adhesion film on a substrate provided in the process chamber after the fourth step, wherein the control device is characterized in that, when the time of the first step or the third step is P1 and the total time of the first step and the second step or the total time of the third step and the fourth step is P, the control device controls the exhaust part and the gas introduction part so that the duty ratio D=P1 / P is 34% or more and 66% or less. In order to achieve the above object, the invention of claim 9 is a film formation method including: a first step of forming a film of a substance having a large getter effect on gas or water (H2O) remaining in the process chamber in a process chamber; a second step of evacuating the process chamber for a predetermined time after the first step; a third step of forming a film of a substance having a large getter effect on gas or water (H2O) remaining in the process chamber in the process chamber after the second step; a fourth step of evacuating the process chamber for a predetermined time after the third step; and an adhesion film formation step of forming an adhesion film on a substrate provided in the process chamber after the fourth step. [Effects of the Invention]

[0008] According to the film forming apparatus, the control device for the film forming apparatus, and the film forming method of the present invention, it is possible to improve the adhesion between the substrate and the adhesion film without reducing productivity. Other features and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings, in which the same or similar elements are designated by the same reference numerals. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view of a film forming apparatus according to a first embodiment of the present invention, taken along a plane along the vertical direction. [Figure 2] 1 is a diagram showing a schematic configuration of a control system in a process chamber of a film forming apparatus according to a first embodiment of the present invention. [Figure 3] FIG. 2 is a diagram showing the flow of a film forming method of Examples 1-1, 1-2, and 1-3 according to the first embodiment of the present invention. [Figure 4] 1A to 1C are diagrams illustrating specific operational examples of film formation procedures in Examples 1-1, 1-2, and 1-3 according to the first embodiment of the present invention. [Figure 5] 1A to 1C are diagrams illustrating specific operational examples of film formation procedures in Examples 1-1, 1-2, and 1-3 according to the first embodiment of the present invention. [Figure 6] 1A to 1C are diagrams illustrating specific operational examples of film formation procedures in Examples 1-1, 1-2, and 1-3 according to the first embodiment of the present invention. [Figure 7] 1A to 1C are diagrams illustrating specific operational examples of film formation procedures in Examples 1-1, 1-2, and 1-3 according to the first embodiment of the present invention. [Figure 8] 1A to 1C are diagrams illustrating specific operational examples of film formation procedures in Examples 1-1, 1-2, and 1-3 according to the first embodiment of the present invention. [Figure 9] FIG. 5 is a schematic cross-sectional view of a film forming apparatus according to a second embodiment of the present invention, taken along a plane parallel to a horizontal plane. [Figure 10] FIG. 10 is a diagram showing a schematic configuration of a control system in a load lock chamber and a process chamber of a film forming apparatus according to a second embodiment of the present invention. [Figure 11] FIG. 10 is a diagram showing the flow of a film forming method of Examples 1-1, 1-2, and 1-3 according to a second embodiment of the present invention. [Figure 12]FIG. 10 is a diagram showing the flow of a film forming method of Examples 2-1, 2-2, and 2-3 according to a second embodiment of the present invention. [Figure 13] FIG. 10 is a diagram showing the flow of a film forming method of Examples 3-1, 3-2, and 3-3 according to a second embodiment of the present invention. [Figure 14] FIG. 1 is a diagram showing a flow of a conventional film forming method. [Figure 15] FIG. 4 is a diagram showing an example of an output signal of a gas introduction system in a gettering process according to the present invention (first embodiment and second embodiment). [Figure 16] FIG. 3 is a diagram showing an example of an output signal of a power supply (IG) in a getter process of the present invention (first embodiment and second embodiment). [Figure 17] FIG. 10 is a diagram showing the relationship between the time of the gettering process and the partial pressure of water (HO) in the process chamber after the gettering process when the film forming methods of the first embodiment (Example 1-2), the second embodiment (Example 1-2, Example 2-2, Example 3-2), and the conventional process are applied. [Figure 18] FIG. 10 is a diagram showing the relationship between the duty ratio and the water (HO) partial pressure in the process chamber after the getter process when the film formation methods of the first embodiment (Example 1-2), the second embodiment (Example 1-2, Example 2-2, Example 3-2), and the conventional process are used. [Figure 19] FIG. 10 is a diagram showing the relationship between the exhaust operation and the water (H2O) partial pressure in the process chamber when the film formation method of the first embodiment (Example 1-2), the second embodiment (Example 1-2, Example 2-2, Example 3-2), and the conventional process are used. DETAILED DESCRIPTION OF THE INVENTION

[0010] The present inventors have discovered the present invention based on the following findings: The inventors' findings will be explained with reference to Figures 1, 2 and 3.

[0011] (First embodiment) 1 is a cross-sectional view of a film deposition apparatus according to a first embodiment of the present invention taken along a plane along the vertical direction, where the XY plane is a plane parallel to the horizontal plane and the Z axis is an axis parallel to the vertical direction. The first major feature of the film forming apparatus of the present invention is that the inner wall surface of the process chamber 50 is provided with an adhesion prevention plate MS1 made of a material that has a high gettering effect against gas or water (HO) remaining in the process chamber 50, and functions as a getter material supply source MS1. The material with a high gettering effect is, for example, titanium (Ti), and is preferably a material for an adhesive film. The adhesive film is preferably a film that serves as a base for wiring connected to electronic components on a substrate, and is preferably a Ti film, TiN film, Ta film, TaN film, Ni film, Cr film, NiCr alloy film, Ta alloy film, or Cu alloy film. The adhesion prevention plate MS1 is preferably installed on the upper surface of the inner wall of the process chamber 50 facing the substrate S, but may also be installed on both side surfaces of the inner wall of the process chamber 50 not facing the substrate S. 1, the film forming apparatus of the present invention includes a process chamber 50, a processing unit FF1 provided within the process chamber 50 for forming an adhesive film on a substrate S as a base for wiring connected to electronic components, an exhaust unit V50 capable of evacuating the process chamber 50, a gas inlet unit G1 for introducing a gas for forming the adhesive film into the process chamber 50, a holder 60 for holding the substrate S within the process chamber 50, a drive unit (not shown) for moving the holder 60 holding the substrate S so that the substrate S passes through a film forming region within the process chamber 50, a cooling unit (not shown) for cooling the holder 60, and a control unit (not shown) for controlling the exhaust unit V50 and the gas inlet unit G1. Details of the control unit will be described later with reference to FIG. 2. The control device includes a storage unit that stores a control program. The processing section FF1 is composed of a rotating cathode that rotates a support that holds multiple targets (T1, T2) and an ion gun I1. The target T1 is a material that has a large getter effect on gas or water (HO) remaining in the process chamber 50, such as titanium (Ti), and is preferably made of the material of an adhesive film (Ti film, TiN film, Ta film, TaN film, Ni film, Cr film, NiCr alloy film, Ta alloy film, Cu alloy film) formed on the substrate S. The target T2 is preferably, for example, copper (Cu), and is the material of the seed film formed on the adhesive film. The seed film is preferably a film for forming wiring on the adhesive film, and is preferably a Cu film, a CuAl alloy film, or a CuW alloy film. As described above, the inner wall surface of the process chamber 50 is provided with an adhesion prevention plate that has a large getter effect against gas or water (H2O) remaining in the process chamber 50, and functions as a getter material supply source MS. In this state, when a voltage not shown is applied to the ion gun I1 to convert the Ar gas into plasma, for example, a Ti adhesion shield MS1 is sputtered, and a Ti film can be deposited on the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and on the magnetic pole of the ion gun I1. It is also possible to use a target T1 made of Ti instead of using the ion gun I1. In this case, the target T1 is directed toward a side other than the film formation area FFA (the side not facing the substrate S). When a voltage is applied to the target T1 in this state to convert the Ar gas into plasma, a Ti film is formed on the adhesion prevention plate MS1, and a material with a large getter effect against gas or water (HO) remaining in the process chamber 50 can be attached to the inner wall of the process chamber 50 other than the film formation area FFA (the side not facing the substrate S).

[0012] FIG. 2 is a block diagram showing a schematic configuration of a control system for the process chamber 50 in the film forming apparatus 1 according to the first embodiment of the present invention.

[0013] In FIG. 2, the control device 1000 is a control unit serving as a control means for controlling the process chamber 50 of the film forming apparatus 1. The control device 1000 includes a CPU 1001 that executes various processing operations, such as calculations, controls, and determinations, and a ROM 1002 (also referred to as a "storage unit") that stores control programs, such as those executed by the CPU 1001 and described later in FIGS. 3 to 9. The control device 1000 also includes a RAM 1003 that temporarily stores input data and data being processed by the CPU 1001, and a non-volatile memory 1004. The control device 1000 is also connected to an input operation unit 1005 that includes a keyboard or various switches for inputting predetermined commands or data, and a display unit 1006 that displays various information, including the input and setting status of the film forming apparatus 1. Furthermore, the control device 1000 is connected to a power supply (SP) 1022 for the sputtering cathode of the process chamber 50, a power supply (IG) 1023 for the ion gun, a gas introduction system 1024, a substrate holder driving mechanism 1025, a pressure measuring instrument 1026, a holder transfer mechanism 1027, a cathode rotation mechanism 1028, an exhaust section V50:1030, etc. via driving circuits 1011 to 1017 and 1029, respectively.

[0014] (Example 1-1) 3 is a diagram showing the flow of the film formation method of Examples 1-1, 1-2, and 1-3 of the first embodiment of the present invention. A major feature of the film formation method of the present invention is that, before the adhesion film formation step of forming an adhesion film on a substrate S provided in the process chamber 50 shown in FIG. 1, a first step (step 102) of forming a film of a substance having a large getter effect on gas or water (H2O) remaining in the process chamber 50 in the process chamber 50, and a second step (step 103) of evacuating the process chamber 50 for a predetermined time after the first step (step 102) are performed at least twice. As shown in FIG. 3, the film formation method of the present invention includes a first step (step 102) of forming a film of a substance having a high getter effect on gas or water (HO) remaining in the process chamber 50 in the process chamber 50, a second step (step 103) of evacuating the process chamber 50 for a predetermined time after the first step (step 102), a third step (step 104) of forming a film of a substance having a high getter effect on gas or water (HO) remaining in the process chamber 50 in the process chamber 50 after the second step (step 103), a fourth step (step 105) of evacuating the process chamber 50 for a predetermined time after the third step (step 104), and an adhesion film formation step (step 107) of forming an adhesion film on a substrate S provided in the process chamber 50 after the fourth step (step 105). In the following description, the term "getter process" refers to either the "first step (step 102) of depositing a film of a substance having a high getter effect on gas or water (HO) remaining in the process chamber 50" and the "second step (step 103) of evacuating the process chamber 50 for a predetermined time after the first step (step 102)" shown in FIG. 3, or the "third step (step 104) of depositing a film of a substance having a high getter effect on gas or water (HO) remaining in the process chamber 50" and the "fourth step (step 105) of evacuating the process chamber 50 for a predetermined time after the third step (step 104)." The "gettering step" refers to a step in which the gettering process is performed at least twice. "Steps 102 to 105" shown in FIG. 3 are referred to as the "gettering step." Therefore, in this specification, performing (steps 102 and 103) or (steps 104 and 105) shown in FIG. 3 after step 104 shown in FIG. 3 is also referred to as the "gettering step." As shown in FIG. 3, the method may include an etching step (step 101) for etching the surface of the substrate S before the first step of step 102, an etching step (step 106) for etching the surface of the substrate S after the fourth step of step 105, and an etching step (steps 101 and 106) for etching the surface of the substrate S before the first step of step 102 and after the fourth step of step 105. As shown in FIG. 3, after the adhesive film forming step (step 107), a seed film forming step (step 107) may be included in which a seed film for forming wiring is formed on the adhesive film. The substrate S in step 101 or step 102 is preferably a Si substrate, a glass or resin angular member, or a resin film fixed to a support. The adhesive film in step 107 is preferably any one of a Ti film, a TiN film, a Ta film, a TaN film, a Ni film, a Cr film, a NiCr alloy film, a Ta alloy film, and a Cu alloy film. The seed film in step 108 is preferably a Cu film, a CuAl alloy film, or a CuW alloy film. When performing the etching process of step 101 or step 106, a holder holding multiple targets and the ion gun is rotated to point the ion gun I1 toward the film formation area FFA (substrate S side). After the pressure inside the process chamber 50 has stabilized from the gas inlet G1, a voltage is applied to the ion gun I1 to convert the Ar gas into plasma. Then, the substrate S is etched. When the etching process of step 101 or step 106 is completed, the application of voltage to the ion gun I1 is stopped. When performing the first process of step 102 or the third process of step 104, the holder holding the multiple targets and the ion gun is rotated to point the ion gun I1 toward a side other than the film formation area FFA (the side not facing the substrate S). A deposition shield MS1 is installed on the inner wall of the chamber of the process chamber 50 other than the film formation area FFA as a getter material supply source MS1, and when a voltage is applied to the ion gun I1 in this state to convert the Ar gas into plasma, the deposition shield MS1 is sputtered, and a film of a substance that has a large getter effect on the gas or water (H2O) remaining on the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) can be formed. When performing the adhesion film forming process in step 107, a holder holding multiple targets and an ion gun is rotated to direct target T1 toward the film formation area FFA (substrate S side). After the pressure in the process chamber 50 has stabilized, a preset power is supplied to target T1 to convert the Ar gas into plasma. Then, an adhesion film is formed on the substrate S. When the seed film formation process is performed in step 108, a holder holding multiple targets and an ion gun is rotated to direct target T2 toward the film formation area FFA (substrate S side). After the pressure in the process chamber 50 has stabilized, a preset power is supplied to target T2 to convert the Ar gas into plasma. Then, a seed film is formed on the adhesion film.

[0015] (Example 1-2) Other than the first step of step 102 or the third step of step 104, the process is the same as in Example 1-1. The first process of step 102 or the third process of step 104 can also be performed with target T1. In this case, a holder holding multiple targets and an ion gun is rotated to orient target T1 outside the film formation area FFA (the side not facing the substrate S). After the pressure in the process chamber 50 has stabilized, a preset power is supplied to target T1 to convert the Ar gas into plasma. This allows deposition of a substance that has a significant gettering effect on gas or water (HO) remaining on the inner wall of the process chamber 50 outside the film formation area FFA.

[0016] (Examples 1-3) Other than the first step of step 102 or the third step of step 104, the process is the same as in Example 1-1. The first process of step 102 or the third process of step 104 may be a combination of the method using the ion gun I1 and the method using the target T1 described above. A material with a large getter effect on the gas or water (H2O) remaining on the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) can be deposited.

[0017] A control program is stored in the ROM 1002 (also referred to as a "storage unit") of the control device of Fig. 2. The control program will be described using the film formation apparatus of Fig. 1, the control device of Fig. 2, and the film formation method of Fig. 3. The control program includes a first step (step 102) of forming a film of a substance having a large getter effect on gas or water (H2O) remaining in the process chamber 50 in the process chamber, a second step (step 103) of evacuating the process chamber for a predetermined time after the first step (step 102), a third step (step 104) of forming a film of a substance having a large getter effect on gas or water (H2O) remaining in the process chamber in the process chamber 50 after the second step (step 103), a fourth step (step 105) of evacuating the process chamber 50 for a predetermined time after the third step (step 104), and a fourth step (step 106) of evacuating the process chamber 50 for a predetermined time after the fourth step (step 105). and an adhesion film forming process for forming an adhesion film on a substrate S provided in the process chamber 50. When the time for the first process (step 102) or the third process (step 104) is P1, and the total time for the first process (step 102) and the second process (step 103) or the total time for the third process (step 104) and the fourth process (step 105) is P, the exhaust section V50 and the gas introduction section G1 are controlled so that the duty ratio D=P1 / P is 34 percent or more and 66 percent or less.

[0018] Specific operational examples (Examples 1-1, 1-2, and 1-3) of the film forming apparatus of the first embodiment will be described below with reference to FIGS.

[0019] (Example 1-1) First, as shown in FIG. 4, in order to form a film on the surface of the substrate S, the substrate S is transported into the process chamber 50 by a transport mechanism (not shown), and the substrate S is held by the holder 60.

[0020] Next, as shown schematically in FIG. 4 (corresponding to step 101 in FIG. 3), the holder holding the multiple targets and the ion gun is rotated to point the ion gun I1 toward the film formation area FFA (the side facing the substrate S). After the pressure inside the process chamber 50 from the gas inlet G1 has stabilized, a voltage is applied to the ion gun I1 to convert the Ar gas into plasma. The substrate S is then etched. As a result, the surface of the substrate S is, for example, planarized, roughened, cleaned, and / or activated. When the etching process is completed, the voltage application to the ion gun I1 is stopped.

[0021] Next, as shown schematically in FIG. 5 (corresponding to step 102 in FIG. 3), the holder holding the multiple targets and the ion gun is rotated to point the ion gun I1 toward a side other than the deposition area FFA (the side not facing the substrate S). After the pressure inside the process chamber 50 has stabilized from the gas inlet G1, a voltage is applied to the ion gun I1 to convert the Ar gas into plasma. A deposition shield MS1 is installed on the inner wall of the process chamber 50 other than the deposition area FFA as a getter material supply source MS1. When a voltage is applied to the ion gun I1 in this state to convert the Ar gas into plasma, the deposition shield MS1 is sputtered, and a substance with a high getter effect against gas or water (HO) remaining on the inner wall of the process chamber 50 in the deposition area FFA (the side facing the substrate S) can be deposited. It is desirable that the Ar gas to be supplied to the process chamber 50 be started to be supplied into the process chamber 50 using the gas introduction part G1 at the same time as the start of the first step (step 102 in FIG. 3), and that the supply into the process chamber be stopped at the same time as the end of the first step. Furthermore, it is desirable to use the exhaust unit V50 to start exhausting the process chamber 50 before or simultaneously with the start of the first step (step 102 in FIG. 3). Furthermore, it is desirable that the power to be supplied to the process chamber 50 be started to be supplied to the process chamber simultaneously with the start of the first step using the power supply (SP) or power supply (IG) shown in FIG. 2, and that the supply to the process chamber be stopped simultaneously with the end of the first step.

[0022] After depositing a film of a material with a large getter effect on the inner wall surface of the process chamber 50, the supply of Ar gas from the gas inlet G1 into the process chamber 50 is stopped, and the process chamber 50 is evacuated for a predetermined time using the exhaust unit V50 (corresponding to step 103 in Figure 3). This completes the first getter process (corresponding to steps 102 and 103 in FIG. 3).

[0023] When starting the second getter process (third process: step 104 and fourth process: step 105 in FIG. 3), as shown schematically in FIG. 5 (corresponding to step 104 in FIG. 3), after the pressure inside the process chamber 50 has stabilized from the gas inlet G1, a voltage is applied to the ion gun I1 to convert the Ar gas into plasma. An adhesion shield MS1 is installed as a getter material supply source MS1 on the inner wall of the process chamber 50 other than the film formation area FFA. When a voltage is applied to the ion gun I1 in this state to convert the Ar gas into plasma, the adhesion shield MS1 is sputtered, and a film of a substance that has a large getter effect on the gas or water (H2O) remaining on the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) can be formed. It is desirable that the Ar gas to be supplied to the process chamber 50 be started to be supplied into the process chamber 50 using the gas introduction part G1 at the same time as the start of the third step (step 104 in FIG. 3), and that the supply into the process chamber be stopped at the same time as the end of the third step. Furthermore, it is desirable that the power to be supplied to the process chamber 50 be started at the same time as the start of the third step using the power supply (SP) or power supply (IG) shown in FIG. 2, and that the supply to the process chamber be stopped at the same time as the end of the third step.

[0024] After depositing a film of a material with a large getter effect on the inner wall surface of the process chamber 50, the supply of Ar gas from the gas inlet G1 into the process chamber 50 is stopped, and the process chamber 50 is evacuated for a predetermined time using the exhaust unit V50 (corresponding to step 105 in Figure 3). This completes the second getter process (corresponding to steps 104 and 105 in FIG. 3), and the "getter step" in FIG. 3 is completed.

[0025] Next, as shown schematically in FIG. 7 (corresponding to step 107 in FIG. 3), the holder holding the multiple targets and the ion gun is rotated to orient target T1 toward the film formation region (the side facing substrate S). After the pressure in process chamber 50 has stabilized, a preset power is supplied to target T1 to convert the Ar gas into plasma. Then, an adhesive film can be formed on substrate S.

[0026] Next, as shown schematically in FIG. 8 (corresponding to step 108 in FIG. 3), the holder holding the multiple targets and the ion gun is rotated to orient target T2 toward the film formation region (the side facing substrate S). After the pressure in process chamber 50 has stabilized, a preset power is supplied to target T2 to convert the Ar gas into plasma. Then, a seed film can be formed on substrate S.

[0027] (Example 1-2) The first process of step 102 or the third process of step 104 shown in FIG. 3 can also be performed with target T1. In this case, as shown schematically in FIG. 6 (corresponding to step 102 or step 104 in FIG. 3), a holder holding multiple targets and an ion gun is rotated to orient target T1 outside the film formation region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 has stabilized, a preset power is supplied to target T1 to convert the Ar gas into plasma. This allows deposition of a substance that has a significant gettering effect on gas or water (HO) remaining on the inner wall of the process chamber 50 outside the film formation region FFA.

[0028] (Examples 1-3) Furthermore, the first process of step 102 or the third process of step 104 shown in FIG. 3 may use both the method using the ion gun I1 and the method using the target T1. In this case, as shown in FIG. 5, the ion gun I1 is directed toward a location other than the deposition area FFA (the side not facing the substrate S). At this time, the target T1 is positioned facing the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 stabilizes, a voltage is applied to the ion gun I1, and a preset power is supplied to the target T1 to convert the Ar gas into plasma. A material with a high getter effect on the side wall of the inner wall of the process chamber 50 in the deposition area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the deposition area FFA (the side facing the substrate S) can be deposited. The method of using the ion gun I1 and the target T1 together is also possible in the case of FIG. 6. In this case, as schematically shown in FIG. 6 (corresponding to step 102 or step 104 in FIG. 3), a holder holding multiple targets and the ion gun is rotated to point the target T1 toward a side other than the film formation region FFA (the side not facing the substrate S). In this case, the ion gun I1 is positioned facing the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 stabilizes, a voltage is applied to the ion gun I1, and a preset power is supplied to the target T1 to convert the Ar gas into plasma. A material with a high getter effect can be attached to the side wall of the inner wall of the process chamber 50 in the film formation region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation region FFA (the side facing the substrate S). Furthermore, the method of using the ion gun I1 and the method of using the target T1 can be used in combination by using the case of FIG. 5 and the case of FIG. 6 in combination. In this case, as shown in Fig. 5, the ion gun I1 is directed away from the film formation area FFA (the side not facing the substrate S). In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to the ion gun I1 to convert the Ar gas into plasma. A material with a large getter effect on the gas or water (H2O) remaining on the sidewall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and on the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) is deposited. At this time, the adhesion shield MS1 formed on the upper inner wall of the process chamber 50 is sputtered by the ion gun I1. In this state, as shown in Figure 6, when the holder holding the multiple targets and the ion gun is rotated to point target T1 outside the film formation area FFA (the side not facing the substrate S), target T1 faces the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to target T1 to convert the Ar gas into plasma. This allows a film of a material with a strong getter effect to be formed on the adhesion shield MS1 formed on the upper inner wall of the process chamber 50 by sputtering with the ion gun I1.

[0029] (Second embodiment) A film forming apparatus, a control device for the film forming apparatus, and a film forming method according to a second embodiment of the present invention will be described below through Examples 1-1 to 3-3 with reference to the accompanying drawings.

[0030] 9 is a schematic cross-sectional view of a film formation apparatus according to one embodiment of the present invention, taken along a plane parallel to a horizontal plane. The film formation apparatus 1 in FIG. 9 includes a process chamber 50, a platform 10 that can be used to transfer a substrate S between the process chamber 50 and an apparatus other than the film formation apparatus, and a load lock chamber 30 that can be used to transfer an unprocessed substrate S provided from the platform 10 and a substrate S after film formation provided from the process chamber 50. The basic configuration of the process chamber 50 of the second embodiment is similar to the basic configuration of the process chamber of the first embodiment, but differs from the basic configuration of the process chamber of the first embodiment in that the processing unit FF consists of a first processing unit FF1 and a second processing unit FF2. 9 is that the inner wall surface of the process chamber 50 is provided with an adhesion prevention plate made of a material (for example, a Ti film) that has a large getter effect on gas or water (HO) remaining in the process chamber 50, and functions as a getter material supply source MS. The getter material supply source MS differs from the getter material supply source MS1 of the first embodiment in that it is made up of a first getter material supply source MS1 in the first processing unit FF1 and a second getter material supply source MS2 in the second processing unit FF2. Here, the XY plane is a plane parallel to the horizontal plane, and the Z axis is an axis parallel to the vertical direction. The film forming apparatus is configured as an apparatus for forming a film on a substrate S. The substrate S can be transported and processed while being held by, for example, a carrier CR.

[0031] The film forming apparatus shown in this embodiment is a plasma processing apparatus capable of performing multiple types of processes in a single processing chamber. A plasma processing apparatus capable of performing multiple types of processes in a single processing chamber does not require a different processing chamber for each process, so the overall area occupied by the apparatus can be reduced, which is advantageous for space saving. In this embodiment, processing is switched by rotating a support that holds multiple targets and an ion gun.

[0032] The film forming apparatus includes a process chamber 50 for forming a film on a substrate S, as well as a load lock chamber 30 equipped with a platform 10 and a heating mechanism. The platform 10 is used to transfer the substrate S between other devices. The load lock chamber 30 is equipped with an exhaust unit V30 that can evacuate the inside of the load lock chamber 30, and the process chamber 50 is equipped with an exhaust unit V50 that can evacuate the inside of the process chamber 50. The exhaust unit V30 and the exhaust unit V50 are vacuum pumps such as dry pumps and turbomolecular pumps. A gate valve 20 is provided between the platform 10 and the load lock chamber 30, and a gate valve 40 is provided between the load lock chamber 30 and the process chamber 50. The substrate S is transported while being held by a carrier CR. A transport device for transporting the carrier CR is installed in the load lock chamber 30 and the process chamber 50.

[0033] The transport device of the load lock chamber 30 is equipped with a mechanism for operating a carrier CR on which an unprocessed substrate S is placed and which is provided from the platform 10, and a carrier CR on which a substrate S on which a film has been formed and which is provided from the process chamber 50 is placed. The operation mechanism 72 drives, for example, a container capable of holding multiple substrates S along the X axis. The substrates S are transported between the platform 10 and the load lock chamber 30 by a transport mechanism (not shown). The carrier CR is transported between the load lock chamber 30 and the process chamber 50 by a transport mechanism 74.

[0034] The transport device for the process chamber 50 includes a transfer mechanism that transfers the carrier CR, which is transported from the load lock chamber 30, to a holder 60 within the process chamber 50, and the holder 60 that holds the carrier CR within the process chamber 50. The holder 60 has a first chuck CH1 and a second chuck CH2 arranged on opposite sides of each other. The first chuck CH1 and the second chuck CH2 may include, for example, electrostatic chucks or mechanical chucks. The film formation apparatus shown in FIG. 9 includes a drive unit that moves the holder 60 holding the carrier CR along a movement path TP so that the substrate S passes through the film formation area FFA within the process chamber 50. The drive unit may employ, for example, a linear motor or a ball screw mechanism. The movement path TP is, for example, parallel to the surface of the substrate S to be processed.

[0035] The substrate S can be, for example, a Si substrate, a glass or resin angular member, or a resin film fixed to a support. Examples of resin angular members that can be used include glass epoxy substrates and build-up substrates. Examples of resin films that can be used include polyimide films. The substrate S can also be a laminate with an interlayer insulating film made of polyimide, epoxy, phenol, or polybenzoxazole resin. Here, the substrate S that is a laminate with resin may have a wiring layer formed thereon, or may be a laminate in which a resin is applied to a base material without forming wiring. However, the shape and material of the substrate S are not limited to specific ones.

[0036] 9 may include a processing section FF that performs the following steps: directing the plasma source toward a section other than the film formation area FFA to deposit a material (e.g., a Ti film) that has a large gettering effect on gas or water (HO) remaining on the inner wall of the chamber; and etching and forming a film on the substrate S passing through the film formation area FFA. Here, the film formation area FFA refers to the area where the substrate S is etched and a film is formed.

[0037] The processing unit FF may be configured to prevent the material (e.g., a Ti film) from adhering to the substrate S during a process of adhering the material, which has a large gettering effect on gas or water (HO) remaining on the inner walls of the process chamber 50 other than the film-forming area FFA. The processing unit FF may also be configured to perform an etching process and form a film on the substrate S both when the substrate S is moving in a first direction along the moving path TP and when the substrate S is moving in a second direction opposite the first direction along the moving path TP. The processing unit FF may be arranged to simultaneously perform an etching process and form a film on two carriers held by the holding unit 60 so that the surfaces to be processed of the substrate S face opposite each other, and may include a first processing unit FF1 that forms a film on the first carrier and a second processing unit FF2 that forms a film on the second carrier. The film-forming area FFA may be disposed between the first processing unit FF1 and the second processing unit FF2. In addition, the space on the first processing unit FF1 side and the space on the second processing unit FF2 side are separated by a separation unit SP provided in the holding unit 60 so that the first processing unit FF1 and the second processing unit FF2 do not face each other when the substrate S moves and the etching process and film formation are being performed.

[0038] The processing unit FF may also include a getter material supply source MS for depositing a material (e.g., a Ti film) with a high gettering effect on gas or water (HO) remaining on the inner walls of the chamber other than the film formation region FFA, a plasma generating unit for generating plasma for depositing the material (e.g., a Ti film) on the inner walls of the chamber other than the film formation region FFA, and a plasma generating unit for generating plasma for etching and forming a film in the film formation region FFA. For example, the processing unit FF may be configured with a rotating cathode that rotates a support holding multiple targets and an ion gun, but this is merely one example. The processing unit FF may also have other configurations.

[0039] The first processing unit may include a target T1, a target T2, an ion gun I1, and a getter material supply source MS1 for depositing a material (e.g., a Ti film) having a large gettering effect on gas or water (H2O) remaining on the inner wall of the chamber other than the film formation region FFA. For example, the getter material supply source MS1 for depositing a material (e.g., a Ti film) having a large gettering effect on the inner wall of the chamber other than the film formation region FFA may be composed of a Ti deposition shield, a Ti target, or a non-Ti deposition shield on which a Ti film is deposited.

[0040] Similarly, the second processing unit may include a target T3, a target T4, an ion gun I2, and a getter material supply source MS2 for depositing a material (e.g., a Ti film) having a high getter effect on gas or water (H2O) remaining on the inner wall of the chamber other than the film formation region FFA. For example, the getter material supply source MS2 for depositing a material (e.g., a Ti film) having a high getter effect on the inner wall of the chamber other than the film formation region FFA may be composed of a Ti adhesion prevention plate or a Ti target.

[0041] The holding part 60 is equipped with a cooling part that cools the holding part 60. By cooling the holding part 60, the substrate S held by the holding part 60 is cooled, and for example, deformation of the substrate S can be suppressed.

[0042] The following describes the processing procedure for substrate S in a film formation apparatus. Hereinafter, substrates S will be referred to as substrates S1, S2, S3, and S4 to distinguish them from one another. First, substrate S1 and substrate S2 are loaded onto a first carrier and a second carrier, respectively, on platform 10. The first carrier carrying substrate S1 and the second carrier carrying substrate S2 are then moved to load lock chamber 30, which is then evacuated to a vacuum by exhaust unit V30. When heat treatment is performed in load lock chamber 30, substrate S is heated using a lamp heater once the pressure in load lock chamber 30 drops below a predetermined pressure. Here, to simultaneously process substrate S1 loaded onto the first carrier and substrate S2 loaded onto the second carrier, the processing surfaces of substrate S1 loaded onto the first carrier and substrate S2 loaded onto the second carrier are assumed to face opposite each other, with the processing surface of substrate S1 facing the +X direction and the processing surface of substrate S2 facing the -X direction.

[0043] Next, the operation mechanism 72 of the load lock chamber 30 prepares the first carrier for transfer to the process chamber 50, and the first carrier is moved to the process chamber 50 and transferred to the holder 60 provided within the process chamber 50. A similar operation is performed for the second carrier. Here, the two carriers CR are held in the holder 60 provided within the process chamber 50 so that the surfaces to be processed of the substrates S placed on each carrier CR face opposite each other, with the surface to be processed of substrate S1 facing the +X direction and the surface to be processed of substrate S2 facing the -X direction. The first and second carriers, held in the holder 60 of the process chamber 50 so that the surfaces to be processed face opposite each other, move along the movement path TP and pass through the film formation area FFA within the process chamber 50, whereby the two carriers are simultaneously etched and a film is formed.

[0044] While the first and second carriers are placed in the process chamber 50, the load lock chamber 30 is vented, substrates S3 and S4 are placed on the third and fourth carriers by the platform 10, the third and fourth carriers on which substrates S3 and S4 are placed are moved to the load lock chamber 30, and the load lock chamber 30 is evacuated by the exhaust unit V30. When heat treatment is performed in the load lock chamber 30, the substrates S are heated by the lamp heaters once the pressure in the load lock chamber 30 drops below a predetermined pressure.

[0045] After the first and second carriers are etched and film-formed in the process chamber 50, the load lock chamber 30 is prepared for transfer by the operation mechanism 72. After the transfer preparation operation is complete, the first carrier is transferred from the holder 60 provided in the process chamber 50 to the transfer mechanism 74, and the first carrier is moved to the load lock chamber 30. After the first carrier has been etched and film-formed in the process chamber 50 and is discharged into the load lock chamber 30, the operation mechanism 72 in the load lock chamber 30 prepares the third carrier to be moved to the process chamber 50. The third carrier is then moved to the process chamber 50. After the third carrier has been moved to the process chamber 50, the second carrier is moved to the load lock chamber 30 by the same operation as the first carrier. After the second carrier has been moved from the process chamber 50 to the load lock chamber 30, the fourth carrier is moved to the process chamber 50 by the same operation as the second carrier. After the third and fourth carriers have been moved to the process chamber 50, the gate valve 40 is closed. After closing the gate valve 40, the load lock chamber 30 is vented, the first carrier and the second carrier are each moved to the platform 10, and the substrates S1 and S2 are removed from the respective carriers CR. At the same time, in the process chamber 50, the third carrier and the fourth carrier are transferred to the holder 60, and etching processing and film formation are performed.

[0046] While the third and fourth carriers are placed in the process chamber 50, the load lock chamber 30 is vented, substrates S5 and S6 are placed on the first and second carriers by the platform 10, the first and second carriers on which substrates S5 and S6 are placed are moved to the load lock chamber 30, and the load lock chamber 30 is evacuated by the exhaust unit V30. When heat treatment is performed in the load lock chamber 30, the substrates S are heated by the lamp heaters once the pressure in the load lock chamber 30 drops below a predetermined pressure.

[0047] After the etching process and film formation are completed for the third and fourth carriers in the process chamber 50, the load lock chamber 30 is prepared for transfer by the operation mechanism 72. After the transfer preparation operation is completed, the third carrier is transferred from the holder 60 provided in the process chamber 50 to the transfer mechanism 74, and the third carrier is moved to the load lock chamber 30. The same operation is performed for the fourth carrier. After the carriers that have been etched and film formed in the process chamber 50 are discharged into the load lock chamber 30, the operation mechanism 72 of the load lock chamber 30 prepares the first carrier for transfer to the process chamber 50. The first carrier is then moved to the process chamber 50. The same operation is performed for the second carrier. After the gate valve 40 is closed, the load lock chamber 30 is vented, the third carrier and the fourth carrier are each moved to the platform 10, and the substrates S3 and S4 are removed from the respective carriers. At the same time, in the process chamber 50, the first carrier and the second carrier are transferred to the holder 60, and etching and film formation are performed on the substrate S5 mounted on the first carrier and the substrate S6 mounted on the second carrier. Continuous processing is performed by repeating the above operations.

[0048] 10 is a block diagram showing a schematic configuration of a control system for a load lock chamber and a process chamber in a film forming apparatus 1 according to a second embodiment of the present invention. The control system of Example 1-1 in FIG. 11 differs from the control system in FIG. 2 in that the control device 1000 includes a control unit as a control means for controlling the load lock chamber 10 of the film forming apparatus 1.

[0049] In FIG. 10 , a control device 1000 is a control unit that serves as a control means for controlling the load lock chamber 10 and the process chamber 50 of the film forming apparatus 1. The control device 1000 includes a CPU 1001 that executes various processing operations, such as calculations, controls, and determinations, and a ROM 1002 (also referred to as a "storage unit") that stores control programs executed by the CPU 1001, such as the processes described below in FIGS. 11 to 13 and 15 to 16. The control device 1000 also includes a RAM 1003 that temporarily stores data being processed by the CPU 1001, input data, and the like, and a non-volatile memory 1004. The control device 1000 is also connected to an input operation unit 1005 that includes a keyboard or various switches for inputting predetermined commands or data, and a display unit 1006 that displays various information, including the input and setting status of the film forming apparatus 1. Furthermore, the control device 1000 is connected to a power supply 1018, a gas introduction system 1019, a substrate holder driving mechanism 1020, a pressure measuring instrument 1021 of the load lock chamber 30, a power supply (SP) 1022 for the sputtering cathode of the process chamber 50, a power supply (IG) 1023 for the ion gun, a gas introduction system 1024, a substrate holder driving mechanism 1025, a pressure measuring instrument 1026, a holder transfer mechanism 1027, a cathode rotation mechanism 1028, an exhaust section V50:1030, etc. via driving circuits 1007 to 1017 and 1029, respectively.

[0050] The ROM 1002 (also called the "storage unit") stores a control program. The control program includes a first step (step 102 in FIG. 2) of forming a film of a substance having a large getter effect on gas or water (H2O) remaining in the process chamber 50, a second step (step 103 in FIG. 2) of evacuating the process chamber for a predetermined time after the first step (step 102 in FIG. 2), a third step (step 104 in FIG. 2) of forming a film of a substance having a large getter effect on gas or water (H2O) remaining in the process chamber 50 after the second step (step 103 in FIG. 2), and a fourth step (step 104 in FIG. 2) of evacuating the process chamber 50 for a predetermined time after the third step (step 104 in FIG. 2). and an adhesion film forming process (step 107 in FIG. 2) after the fourth process (step 105 in FIG. 2) in which an adhesion film is formed on the substrate S provided in the process chamber 50. When the time of the first process or (step 102 in FIG. 2) or the third process (step 104 in FIG. 2) is P1, and the total time of the first process (step 102 in FIG. 2) and the second process (step 103 in FIG. 2) or the total time of the third process (step 104 in FIG. 2) and the fourth process (step 105 in FIG. 2) is P, the exhaust section V50 and the gas introduction section G1 are controlled so that the duty ratio D=P1 / P is 34% or more and 66% or less.

[0051] (Example 1-1) FIG. 11 is a diagram showing the flow of the film formation method of Examples 1-1, 1-2, and 1-3 when the film formation apparatus of the second embodiment is used. Each step will be explained below with reference to this flowchart. The basic configuration of the gettering step 33 is the same as that of the film formation method when the film formation apparatus of the first embodiment of FIG. 2 is used. That is, the gettering step 33 of FIG. 11 is composed of steps 102 to 105 of the film formation method of FIG. 2. The film formation method of Example 1-1 in Figure 11 differs from the film formation method in Figure 2 in that it adds carrier transfer step 31, adhesion film target cleaning step 34, seed film target cleaning step 36, and carrier discharge step 38.

[0052] In step 31, the carrier CR is transferred to the holder 60 in the process chamber 50.

[0053] In step 32, the etching process is performed. A holder holding multiple targets and ion guns is rotated to direct ion guns I1 and I2 toward the film formation area FFA (the side facing the substrate S). After the pressure inside the process chamber 50 stabilizes from the gas inlet G1, voltage is applied to the ion guns I1 and I2 to convert the Ar gas into plasma. Then, to perform the etching process, carrier transport begins toward the film formation area FFA, and the substrate S is etched by passing the carrier through the film formation area FFA a specified number of times at a preset transport speed. When the etching process is completed, the application of voltage to the ion guns I1 and I2 is stopped. In this embodiment, Ar gas is used as the introduced gas, but this is not limited to this, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

[0054] In step 33, a gettering process is performed. A holder holding multiple targets and ion guns is rotated, and ion guns I1 and I2 are directed toward a side other than film formation region FFA (a side not facing substrate S). A getter material supply source MS, a shield plate made of a material (e.g., a Ti film) that has a high gettering effect on gas or water (H2O) remaining on the inner wall of process chamber 50, is installed on the inner wall of process chamber 50 other than film formation region FFA. When a voltage is applied to ion guns I1 and I2 in this state to convert Ar gas into plasma, the shield plate is sputtered, and the material (e.g., a Ti film) can be attached to the inner wall of the chamber other than film formation region FFA and to the magnetic poles of ion guns I1 and I2. This "gettering step" repeats the gettering process (steps 102 and 103 in FIG. 3 or steps 104 and 105 in FIG. 3) two or more times, which is a series of operations consisting of sputtering of the adhesion prevention plate MS and evacuation after sputtering, and therefore it is desirable to continue until the pressure inside the process chamber 50 or the partial pressure of water (H2O) falls to a predetermined pressure or below. Here, if a reactive gas is used in the gettering step of step 33, the introduction of the reactive gas is stopped before the start of step 34.

[0055] In step 34, a cleaning process for the targets used in forming the adhesion film is performed. A holder holding multiple targets and an ion gun is rotated, and targets T1 and T3 (for example, both Ti targets) are directed toward a region other than the film formation region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 has stabilized, power is applied to targets T1 and T3 to convert the Ar gas into plasma, and targets T1 and T3 are cleaned at a preset power for a predetermined time.

[0056] In step 35, an adhesion film formation process is performed. A holder holding multiple targets and an ion gun is rotated to direct targets T1 and T3 (e.g., both Ti targets) toward the film formation area FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 (e.g., both Ti targets) to convert the Ar gas into plasma. Then, in order to form an adhesion film (e.g., a Ti film) on the substrate S, transport of a carrier toward the film formation area FFA is started, and the carrier is passed through the film formation area FFA a specified number of times at a preset transport speed, thereby forming an adhesion film (e.g., a Ti film) on the substrate S.

[0057] In step 36, a cleaning process of the targets used in seed film formation is performed. A holder holding multiple targets and an ion gun is rotated, and targets T2 and T4 (e.g., both Cu targets) are directed toward a portion other than the film formation area FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, power is applied to targets T2 and T4 (e.g., both Cu targets) to convert the Ar gas into plasma, and targets T2 and T4 (e.g., both Cu targets) are cleaned at a preset power for a predetermined time.

[0058] In step 37, a seed film formation process is performed. A holder holding multiple targets and an ion gun is rotated to direct targets T2 and T4 (e.g., both Cu targets) toward the film formation area FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T2 and T4 (e.g., both Cu targets) to convert the Ar gas into plasma. Then, to form a seed film (e.g., a Cu film) on the adhesion film (e.g., a Ti film), transport of a carrier toward the film formation area FFA is started, and the carrier is passed through the film formation area FFA a specified number of times at a preset transport speed, thereby forming a seed film (e.g., a Cu film) on the adhesion film (e.g., a Ti film) formed on the substrate S.

[0059] In step 38, the carrier CR is removed from the holder 60 in the process chamber 50 and is discharged from the process chamber 50.

[0060] According to this Example 1-1, by providing the getter material supply source MS separately from the film-forming cathode, it is not necessary to install a target as a getter material supply source on the rotating cathode. This allows the gettering process to be performed without being limited by the type of sputtered film. Furthermore, in addition to the area where a material with a high gettering effect (e.g., a Ti film) is deposited on the chamber inner wall by ion beam sputtering, the adhesion prevention plate MS (e.g., Ti) serving as the getter material supply source MS is activated by ion beam irradiation and acts as an adsorption surface for gas molecules. Therefore, the area of the adsorption surface for gas molecules is increased, resulting in a high gettering effect. Furthermore, by performing the gettering process multiple times in the gettering process, the surface for adsorption of gas molecules can be activated for each gettering process, thereby promoting the adsorption effect. Furthermore, when the supply of Ar gas is stopped, water (HO) gas is quickly exhausted along with Ar gas, thereby facilitating the cleaning of the process chamber 50. Furthermore, according to this Example 1-1, by constantly measuring the pressure inside the process chamber 50 or the partial pressure of water (H2O) inside the process chamber 50 with a quadrupole mass spectrometer RGA, the gettering process can be continued until the pressure drops below a predetermined level, thereby stabilizing the atmosphere inside the process chamber 50 during the formation of the adhesion film.

[0061] (Example 1-2) Next, a film formation method of Example 1-2, which is a modification of Example 1-1, will be described using the flowchart of the film formation method of Example 1-1 in FIG. 11. The film formation method of Example 1-2 differs from the film formation method of Example 1-1 in step 33. The basic configuration of the gettering step 33 is the same as that of the film formation method of FIG. 2. That is, the gettering step 33 of FIG. 11 is composed of steps 102 to 105 of the film formation method of FIG. 2. The gettering process is composed of steps 102 and 103 or steps 104 and 105 of the film formation method of FIG. 2. Step 33 will be described below with reference to the flowchart of Fig. 11 and Fig. 6. Steps 31, 32, and steps 34 to 38 are the same as those in Example 1-1, and therefore will not be described here.

[0062] In step 33 (gettering process) of Example 1-2, as shown in FIG. 6, a holder holding multiple targets and an ion gun is rotated to orient targets T1 and T3 outside the deposition area FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 to convert the Ar gas into plasma. Then, a film of a substance having a large gettering effect on gas or water (HO) remaining on the inner wall of the process chamber 50 outside the deposition area FFA can be formed.

[0063] (Examples 1-3) Next, a film formation method of Example 1-3, which is a modification of Example 1-1, will be described using the flowchart of the film formation method of Example 1-1 in FIG. 11. The film formation method of Example 1-3 differs from the film formation method of Example 1-1 in step 33. The basic configuration of the gettering step 33 is the same as the film formation method of FIG. 2. That is, the gettering step 33 of FIG. 11 is composed of steps 102 to 105 of the film formation method of FIG. 2. The gettering process is composed of steps 102 and 103 or steps 104 and 105 of the film formation method of FIG. 2. Step 33 will be described below with reference to the flowchart of Fig. 11 and Fig. 5. Steps 31, 32, and steps 34 to 38 are the same as those in Example 1-1, and therefore will not be described here.

[0064] In step 33 (gettering process) of Examples 1-3, the method using ion guns I1 and I2 and the method using targets T1 and T3 are used in combination. In this case, as shown in FIG. 5, the ion guns I1 and I2 are directed toward a location other than the deposition area FFA (the side not facing the substrate S). At this time, the targets T1 and T3 are positioned facing the sidewall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 stabilizes, a voltage is applied to the ion guns I1 and I2, and a preset power is supplied to the targets T1 and T3 to convert the Ar gas into plasma. A material with a high gettering effect on the gas or water (H2O) remaining on the sidewall of the inner wall of the process chamber 50 in the deposition area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the deposition area FFA (the side facing the substrate S) can be attached. The method of using the ion guns I1 and I2 and the target T1 and T3 together can also be used in the case of FIG. 6. In this case, as shown in FIG. 6, the holder holding the multiple targets and ion guns is rotated to point the targets T1 and T3 toward a side other than the film formation region FFA (the side not facing the substrate S). In this case, the ion guns I1 and I2 are positioned facing the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 stabilizes, a voltage is applied to the ion guns I1 and I2, and a preset power is supplied to the targets T1 and T3 to convert the Ar gas into plasma. A material with a strong getter effect can be attached to the side wall of the inner wall of the process chamber 50 in the film formation region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation region FFA (the side facing the substrate S). The method of using the ion guns I1 and I2 and the method of using the targets T1 and T3 can also be achieved by combining the case of FIG. 5 and the case of FIG. In this case, as shown in Fig. 5, the ion guns I1 and I2 are directed toward a location other than the film formation area FFA (the side not facing the substrate S). In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to the ion guns I1 and I2 to convert the Ar gas into plasma. A material with a large getter effect on the gas or water (HO) remaining on the sidewall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and on the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) is deposited. At this time, the adhesion shields MS1 and MS2 formed on the upper inner wall of the process chamber 50 are sputtered by the ion guns I1 and I2. In this state, as shown in Figure 6, when the holder holding the multiple targets and ion guns is rotated to point targets T1 and T3 outside the film formation area FFA (the side not facing the substrate S), targets T1 and T3 face the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 to convert the Ar gas into plasma. This allows a film of a material with a strong getter effect to be formed on the adhesion shields MS1 and MS2 formed on the upper inner wall of the process chamber 50, which have been sputtered by ion guns I1 and I2.

[0065] Example 2-1 In Example 1-1 of FIG. 11 described above, an example in which the gettering process is performed between the etching process and the adhesion film forming process has been described, but the gettering process may also be performed before the etching process. An example in which the gettering process is performed before the etching process will be described below as Example 2-1. FIG. 12 is a flowchart showing the processing procedures of the film forming methods of Examples 2-1, 2-2, and 2-3. The basic configuration of the gettering process and gettering process 42 is the same as that of the film forming method of FIG. 2. That is, the gettering process 42 of FIG. 6 is composed of steps 102 to 105 of the film forming method of FIG. 2. The gettering process is composed of steps 102 and 103 or steps 104 and 105 of the film forming method of FIG. 2.

[0066] In step 41, the carrier CR is transferred to the holder 60 in the process chamber 50.

[0067] In step 42, a gettering process is performed. The holder holding the multiple targets and ion guns is rotated to point the ion guns I1 and I2 toward areas other than the deposition region FFA. A shield plate (e.g., made of Ti) is installed on the inner wall of the process chamber 50 outside the deposition region FFA as a getter material supply source MS. When a voltage is applied to the ion guns I1 and I2 in this state to generate plasma from the Ar gas, the shield plate (e.g., made of Ti) is sputtered, depositing a material with a high gettering effect (e.g., a Ti film) on the inner wall of the chamber outside the deposition region FFA and on the magnetic poles of the ion guns. This "gettering process" is a gettering process consisting of a series of operations: sputtering the Ti shield plate and exhausting the gas after sputtering. This operation is repeated two or more times, so it is desirable to continue until the pressure or HO partial pressure inside the process chamber 50 drops below a predetermined pressure.

[0068] In step 43, the etching process is performed. A holder holding multiple targets and ion guns is rotated to direct ion guns I1 and I2 toward the film formation area FFA. After the pressure in the process chamber 50 stabilizes, voltage is applied to ion guns I1 and I2 to convert Ar gas into plasma. Then, to perform the etching process, transport of the carrier CR toward the film formation area FFA is started, and the carrier CR passes through the film formation area FFA (the side facing the substrate S) a specified number of times at a preset transport speed, thereby etching the substrate S. When the etching process is completed, the application of voltage to ion guns I1 and I2 is stopped. In this embodiment, Ar gas is used as the gas introduced from gas introduction part G1, but this is not limited to Ar gas, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

[0069] In step 44, a cleaning process of the targets used in forming the adhesion film is performed. A holder holding multiple targets and an ion gun is rotated, and targets T1 and T3 (for example, both Ti targets) are directed toward a side other than the film formation area FFA (the side not facing the substrate S). After the pressure in the process chamber 50 has stabilized, power is applied to targets T1 and T3 (for example, both Ti targets) to convert the Ar gas into plasma, and cleaning of targets T1 and T3 (for example, both Ti targets) is performed for a predetermined time with a preset power.

[0070] In step 45, an adhesion film formation process is performed. A holder holding multiple targets and an ion gun is rotated to direct targets T1 and T3 (e.g., both Ti targets) toward the film formation area FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 (e.g., both Ti targets) to convert the Ar gas into plasma. Then, to form an adhesion film (e.g., a Ti film), the carrier CR begins to be transported toward the film formation area FFA, and the carrier CR passes through the film formation area FFA a specified number of times at a preset transport speed, thereby forming an adhesion film (e.g., a Ti film) on the substrate S.

[0071] In step 46, a cleaning process of the targets used in forming the seed film is performed. A holder holding multiple targets and an ion gun is rotated to direct targets T2 and T4 (e.g., both Cu targets) toward areas other than the film formation region FFA, and after the pressure in the process chamber 50 has stabilized, power is applied to targets T2 and T4 (e.g., both Cu targets) to convert the Ar gas into plasma, and cleaning of targets T2 and T4 (e.g., both Cu targets) is performed at a preset power for a predetermined time.

[0072] In step 47, a seed film formation process is performed. A holder holding multiple targets and an ion gun is rotated to direct targets T2 and T4 (e.g., both Cu targets) toward the film formation area FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T2 and T4 (e.g., both Cu targets) to convert the Ar gas into plasma. Then, to form a seed film (e.g., a Cu film), the carrier CR begins to be transported toward the film formation area FFA, and is passed through the film formation area FFA a specified number of times at a preset transport speed, thereby forming a seed film (e.g., a Cu film) on the adhesion film formed on the substrate S.

[0073] In step 48 , the carrier CR is removed from the holder 60 in the process chamber 50 and is discharged from the process chamber 50 .

[0074] According to this Example 2-1, a material with a large gettering effect (e.g., a Ti film) can be attached to the chamber inner wall other than the film formation area FFA before the etching process, and furthermore, a material with a large gettering effect (e.g., a Ti film) is coated on the magnetic pole of the ion gun during the gettering process. Therefore, an active adsorption surface with a gettering effect is exposed in the film formation area FFA during the etching process, and water (H2O) gas released from the substrate S during etching can be adsorbed in real time.

[0075] (Example 2-2) Next, a film formation method of Example 2-2, which is a modification of Example 2-1, will be described using the flowchart of the film formation method of Example 2-1 in FIG. 12. The film formation method of Example 2-2 differs from the film formation method of Example 2-1 in step 42. The basic configuration of getter step 42 is the same as that of the film formation method of FIG. 2. That is, getter step 33 of FIG. 12 is composed of steps 102 to 105 of the film formation method of FIG. 2. The getter process is composed of steps 102 and 103 or steps 104 and 105 of the film formation method of FIG. 2. Step 42 will be described below with reference to the flowchart of Fig. 12 and Fig. 6. Step 41 and steps 43 to 48 are the same as the steps in Example 2-1, and therefore description thereof will be omitted.

[0076] In step 42 (gettering process) of Example 2-2, as shown in FIG. 6, a holder holding multiple targets and an ion gun is rotated to orient targets T1 and T3 outside the film formation area FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 to convert the Ar gas into plasma. Then, a film of a substance having a large gettering effect on gas or water (HO) remaining on the inner wall of the process chamber 50 outside the film formation area FFA can be formed.

[0077] (Example 2-3) Next, a film formation method of Example 2-3, which is a modification of Example 2-1, will be described using the flowchart of the film formation method of Example 2-1 in FIG. 12. The film formation method of Example 2-3 differs from the film formation method of Example 2-1 in step 42. The basic configuration of getter step 42 is the same as the film formation method of FIG. 2. That is, getter step 42 of FIG. 12 is composed of steps 102 to 105 of the film formation method of FIG. 2. The getter process is composed of steps 102 and 103 or steps 104 and 105 of the film formation method of FIG. 2. Step 42 will be described below with reference to the flowchart of Fig. 12 and Fig. 5. Step 41 and each of the steps from step 43 to step 48 are the same as the steps in Example 2-1, and therefore description thereof will be omitted.

[0078] In step 33 (gettering process) of Example 2-3, the method using ion guns I1 and I2 and the method using targets T1 and T3 are used in combination. In this case, as shown in FIG. 5, ion guns I1 and I2 are directed toward a location other than the deposition area FFA (the side not facing the substrate S). At this time, targets T1 and T3 are positioned facing the sidewall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 stabilizes, a voltage is applied to ion guns I1 and I2, and a preset power is supplied to targets T1 and T3 to convert the Ar gas into plasma. A material with a high gettering effect on the sidewall of the inner wall of the process chamber 50 in the deposition area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the deposition area FFA (the side facing the substrate S) can be attached. The method of using the ion guns I1 and I2 and the target T1 and T3 together can also be used in the case of FIG. 6. In this case, as shown in FIG. 6, the holder holding the multiple targets and ion guns is rotated to point the targets T1 and T3 toward a side other than the film formation region FFA (the side not facing the substrate S). In this case, the ion guns I1 and I2 are positioned facing the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 stabilizes, a voltage is applied to the ion guns I1 and I2, and a preset power is supplied to the targets T1 and T3 to convert the Ar gas into plasma. A material with a strong getter effect can be attached to the side wall of the inner wall of the process chamber 50 in the film formation region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation region FFA (the side facing the substrate S). The method of using the ion guns I1 and I2 and the method of using the targets T1 and T3 can also be achieved by combining the case of FIG. 5 and the case of FIG. In this case, as shown in Fig. 5, the ion guns I1 and I2 are directed toward a location other than the film formation area FFA (the side not facing the substrate S). In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to the ion guns I1 and I2 to convert the Ar gas into plasma. A material with a large getter effect on the gas or water (HO) remaining on the sidewall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and on the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) is deposited. At this time, the adhesion shields MS1 and MS2 formed on the upper inner wall of the process chamber 50 are sputtered by the ion guns I1 and I2. In this state, as shown in Figure 6, when the holder holding the multiple targets and ion guns is rotated to point targets T1 and T3 outside the film formation area FFA (the side not facing the substrate S), targets T1 and T3 face the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 to convert the Ar gas into plasma. This allows a film of a material with a strong getter effect to be formed on the adhesion shields MS1 and MS2 formed on the upper inner wall of the process chamber 50, which have been sputtered by ion guns I1 and I2.

[0079] (Example 3-1) In the above-described Example 1-1, a gettering process is performed between the etching process and the adhesion film formation process, and in Example 2-1, a gettering process is performed before the etching process. However, the gettering process may be performed both before the etching process and between the etching process and the adhesion film formation process. An example in which the gettering process is performed both before the etching process and between the etching process and the adhesion film formation process is described below as Example 3-1. FIG. 13 is a flowchart of the film formation methods of Examples 3-1, 3-2, and 3-3. The basic configurations of gettering process 52 and gettering process 54 are the same as those of the film formation method of FIG. 2. That is, gettering process 42 of FIG. 6 is composed of steps 102 to 105 of the film formation method of FIG. 2. The gettering process is composed of steps 102 and 103 or steps 104 and 105 of the film formation method of FIG. 2.

[0080] In step 51 , the carrier CR is transferred to the holder 60 in the process chamber 50 .

[0081] In step 52, a gettering process is performed. A holder holding multiple targets and ion guns is rotated to point ion guns I1 and I2 toward areas other than the deposition region FFA. A shield plate (e.g., made of Ti) is installed on the inner wall of the process chamber 50 outside the deposition region FFA as a getter material supply source MS. When a voltage is applied to the ion guns I1 and I2 in this state to generate plasma from the Ar gas, the shield plate (e.g., made of Ti) is sputtered, depositing a Ti film on the inner wall of the chamber outside the deposition region FFA and on the magnetic poles of the ion guns I1 and I2. This "gettering process" is a gettering process consisting of a series of operations: sputtering the Ti shield plate and exhausting the gas after sputtering. This operation is repeated two or more times, so it is desirable to continue until the pressure or HO partial pressure inside the process chamber 50 drops below a predetermined pressure.

[0082] In step 53, the etching process is performed. A holder holding multiple targets and ion guns is rotated to direct ion guns I1 and I2 toward the film formation area FFA. After the pressure inside the process chamber 50 stabilizes from the gas inlet G1, voltage is applied to the ion guns I1 and I2 to convert the Ar gas into plasma. To perform the etching process, the carrier CR begins to be transported toward the film formation area FFA, and the substrate S is etched by passing through the film formation area FFA a specified number of times at a preset transport speed. When the etching process is completed, the voltage application to the ion guns is stopped. In this embodiment, Ar gas is used as the introduced gas, but this is not limited to this, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

[0083] In step 54, a gettering process is performed. The holder holding the multiple targets and ion guns is rotated to point the ion guns I1 and I2 toward areas other than the deposition region FFA. A shield plate (e.g., made of Ti) is installed on the inner wall of the process chamber 50 outside the deposition region FFA as a getter material supply source MS. When a voltage is applied to the ion guns I1 and I2 in this state to generate plasma from the Ar gas, the shield plate (e.g., made of Ti) is sputtered, depositing a material with a high gettering effect (e.g., a Ti film) on the inner wall of the chamber outside the deposition region FFA and on the magnetic poles of the ion guns I1 and I2. This "gettering process" is a gettering process consisting of a series of operations: sputtering the Ti shield plate and exhausting the gas after sputtering. This operation is repeated two or more times, so it is desirable to continue until the pressure or HO partial pressure inside the process chamber 50 drops below a predetermined pressure.

[0084] In step 55, a cleaning process of the targets used in forming the adhesion film is performed. A holder holding multiple targets and an ion gun is rotated, and targets T1 and T3 (e.g., Ti targets) are directed toward areas other than the film formation area FFA (the side not facing the substrate S). After the pressure in the process chamber stabilizes, power is applied to targets T1 and T3 (e.g., Ti targets) to convert Ar gas into plasma, and cleaning of targets T1 and T3 (e.g., Ti targets) is performed for a predetermined time with a preset power.

[0085] In step 56, an adhesion film formation process is performed. A holder holding multiple targets and an ion gun is rotated to direct targets T1 and T3 (e.g., both Ti targets) toward the film formation area FFA. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 (e.g., both Ti targets) to convert the Ar gas into plasma. Then, to form an adhesion film (e.g., a Ti film), transport of the carrier CR toward the film formation area FFA is started, and the carrier CR is passed through the film formation area FFA a specified number of times at a preset transport speed, thereby forming an adhesion film (e.g., a Ti film) on the substrate S.

[0086] In step 57, a cleaning process of the targets used in seed film formation is performed. A holder holding multiple targets and an ion gun is rotated, and targets T2 and T4 (for example, both Cu targets) are directed toward a region other than the film formation region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, power is applied to the Cu targets to convert the Ar gas into plasma, and targets T2 and T4 (for example, both Cu targets) are cleaned for a predetermined time with a preset power.

[0087] In step 58, a seed film formation process is performed. A holder holding multiple targets and an ion gun is rotated to direct targets T2 and T4 (e.g., both Cu targets) toward the film formation area FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T2 and T4 (e.g., both Cu targets) to convert the Ar gas into plasma. Then, to form a seed film (e.g., a Cu film), transport of the carrier CR toward the film formation area FFA is started, and the carrier CR is passed through the film formation area FFA a specified number of times at a preset transport speed, thereby forming a seed film (e.g., a Cu film) on the adhesion film formed on the substrate S.

[0088] In step 59 , the carrier CR is removed from the holder 60 in the process chamber 50 and is then discharged from the process chamber 50 .

[0089] According to this Example 3-1, it is possible to achieve the effects of both the above-mentioned Examples 1-1 and 2-1. Specifically, it is possible to expect both a real-time getter effect during the etching process and the effect of purifying the atmosphere in the process chamber before the adhesion film formation process.

[0090] (Example 3-2) Next, a film formation method of Example 3-2, which is a modification of Example 3-1, will be described using the flowchart of the film formation method of Example 3-1 in Figure 13. The film formation method of Example 3-2 differs from the film formation method of Example 3-1 in steps 52 and 54. The basic configuration of gettering step 52 and gettering step 54 is the same as that of the film formation method of Figure 2. That is, gettering step 52 and gettering step 54 in Figure 13 are composed of steps 102 to 105 of the film formation method of Figure 2. The gettering process is composed of steps 102 and 103 or steps 104 and 105 of the film formation method of Figure 2. Steps 52 and 54 will be described below with reference to the flowchart of Fig. 13 and Fig. 6. Steps 51, 53, and 55 to 58 are the same as those in Example 3-1, and therefore will not be described here.

[0091] In steps 52 and 54 (gettering process) of Example 3-2, as shown in FIG. 6, a holder holding multiple targets and an ion gun is rotated to orient targets T1 and T3 outside the deposition area FFA (the side not facing the substrate S). After the pressure in the process chamber 50 has stabilized, a preset power is supplied to targets T1 and T3 to convert the Ar gas into plasma. This allows deposition of a substance that has a significant gettering effect on gas or water (HO) remaining on the inner wall of the process chamber 50 outside the deposition area FFA.

[0092] (Example 3-3) Next, a film formation method of Example 3-3, which is a modification of Example 3-1, will be described using the flowchart of the film formation method of Example 3-1 in Figure 13. The film formation method of Example 3-3 differs from the film formation method of Example 3-1 in steps 52 and 54. The basic configuration of gettering step 52 and gettering step 54 is the same as that of the film formation method of Figure 2. That is, gettering step 52 and gettering step 54 in Figure 13 are composed of steps 102 to 105 of the film formation method of Figure 2. The gettering process is composed of steps 102 and 103 or steps 104 and 105 of the film formation method of Figure 2. Steps 52 and 54 will be described below with reference to the flowchart in Fig. 13 and Fig. 5. Steps 51, 53, and 55 to 58 are the same as those in Example 3-1, and therefore will not be described here.

[0093] In steps 52 and 54 of Example 3-3 (the gettering process), the method using ion guns I1 and I2 and the method using targets T1 and T3 are used in combination. In this case, as shown in FIG. 5, ion guns I1 and I2 are directed toward a location other than the deposition area FFA (the side not facing the substrate S). At this time, targets T1 and T3 are positioned facing the sidewall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 stabilizes, a voltage is applied to ion guns I1 and I2, and a preset power is supplied to targets T1 and T3 to convert the Ar gas into plasma. A material with a high gettering effect on the sidewall of the inner wall of the process chamber 50 in the deposition area FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the deposition area FFA (the side facing the substrate S) can be attached. The method of using the ion guns I1 and I2 and the target T1 and T3 together can also be used in the case of FIG. 6. In this case, as shown in FIG. 6, the holder holding the multiple targets and ion guns is rotated to point the targets T1 and T3 toward a side other than the film formation region FFA (the side not facing the substrate S). In this case, the ion guns I1 and I2 are positioned facing the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 stabilizes, a voltage is applied to the ion guns I1 and I2, and a preset power is supplied to the targets T1 and T3 to convert the Ar gas into plasma. A material with a strong getter effect can be attached to the side wall of the inner wall of the process chamber 50 in the film formation region FFA (the side facing the substrate S) and the inner wall of the process chamber 50 in the film formation region FFA (the side facing the substrate S). The method of using the ion guns I1 and I2 and the method of using the targets T1 and T3 can also be achieved by combining the case of FIG. 5 and the case of FIG. In this case, as shown in Fig. 5, the ion guns I1 and I2 are directed toward a location other than the film formation area FFA (the side not facing the substrate S). In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to the ion guns I1 and I2 to convert the Ar gas into plasma. A material with a large getter effect on the gas or water (HO) remaining on the sidewall of the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) and on the inner wall of the process chamber 50 in the film formation area FFA (the side facing the substrate S) is deposited. At this time, the adhesion shields MS1 and MS2 formed on the upper inner wall of the process chamber 50 are sputtered by the ion guns I1 and I2. In this state, as shown in Figure 6, when the holder holding the multiple targets and ion guns is rotated to point targets T1 and T3 outside the film formation area FFA (the side not facing the substrate S), targets T1 and T3 face the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 to convert the Ar gas into plasma. This allows a film of a material with a strong getter effect to be formed on the adhesion shields MS1 and MS2 formed on the upper inner wall of the process chamber 50, which have been sputtered by ion guns I1 and I2.

[0094] (Comparative Example) The adhesion film forming process was carried out in the conventional process (the aforementioned Patent Document 1) without the gettering process of the present invention. Fig. 14 is a flowchart showing the processing procedure of the film forming method without the gettering process.

[0095] In step 61, the carrier CR is transferred to the holder 60 in the process chamber 50.

[0096] In step 62, the etching process is performed. A holder holding multiple targets and ion guns is rotated to direct ion guns I1 and I2 toward the film formation area FFA. After the pressure in the process chamber 50 stabilizes, voltage is applied to ion guns I1 and I2 to convert Ar gas into plasma. Then, to perform the etching process, transport of the carrier CR toward the film formation area FFA is started, and the substrate S is etched by passing through the film formation area FFA a specified number of times at a preset transport speed. When the etching process is completed, the application of voltage to ion guns I1 and I2 is stopped. In this embodiment, Ar gas is used as the introduced gas, but this is not limited to this, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

[0097] In step 63, a cleaning process of the targets used in forming the adhesion film is performed. A holder holding multiple targets and an ion gun is rotated, and targets T1 and T3 (for example, both Ti targets) are directed toward areas other than the film formation region FFA. After the pressure in the process chamber 50 has stabilized, power is applied to targets T1 and T3 (for example, both Ti targets) to convert the Ar gas into plasma, and cleaning of targets T1 and T3 (for example, both Ti targets) is performed for a predetermined time with a preset power.

[0098] In step 64, an adhesion film formation process is performed. A holder holding multiple targets and an ion gun is rotated to direct targets T1 and T3 (e.g., both Ti targets) toward the film formation area FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 (e.g., both Ti targets) to convert the Ar gas into plasma. Then, to form an adhesion film (e.g., a Ti film), transport of the carrier CR toward the film formation area FFA is started, and the carrier CR is passed through the film formation area FFA a specified number of times at a preset transport speed, thereby forming an adhesion film (e.g., a Ti film) on the substrate S.

[0099] In step 65, a cleaning process of the targets used in seed film formation is performed. A holder holding multiple targets and an ion gun is rotated, and targets T2 and T4 (e.g., both Cu targets) are directed toward areas other than the film formation area FFA. After the pressure in the process chamber 50 stabilizes, power is applied to targets T2 and T4 (e.g., both Cu targets) to convert the Ar gas into plasma, and targets T2 and T4 (e.g., both Cu targets) are cleaned at a preset power for a predetermined time.

[0100] In step 66, a seed film formation process is performed. A holder holding multiple targets and an ion gun is rotated to direct targets T2 and T4 (e.g., both Cu targets) toward the film formation area FFA. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T2 and T4 (e.g., both Cu targets) to convert the Ar gas into plasma. Then, to form a seed film (e.g., a Cu film), the carrier CR begins to be transported toward the film formation area FFA, and is passed through the film formation area FFA a specified number of times at a preset transport speed, thereby forming a seed film (e.g., a Cu film) on the adhesion film formed on the substrate S.

[0101] In step 67, the carrier CR is removed from the holder 60 in the process chamber 50 and is then discharged from the process chamber 50.

[0102] FIG. 15 is a diagram showing an example of an output signal from the gas introduction system 1024 when the getter process is repeated two or more times in the getter steps of the first embodiment (Examples 1-1 to 1-3) and the second embodiment (Examples 1-1 to 1-3, Examples 2-1 to 2-3, and Examples 3-1 to 3-3). Ar gas is supplied to the process chamber 50. In the output signal from the gas introduction system 1024, the period of the gas introduction system output signal (period of the getter process) is P, the gas supply time (time to supply Ar gas to the process chamber 50, time to form a film of a substance with a high getter effect on gas or water (HO) remaining in the process chamber 50) is P1, the predetermined time, the time to evacuate the process chamber 50 is P2, and the duty ratio is D=P1 / P. In addition, in P1, it is desirable that the supply of Ar gas to the process chamber 50 starts simultaneously with the start of the first or third step shown in FIG. 3, and that the supply of Ar gas to the process chamber stops simultaneously with the end of the first or third step. It is also desirable to start evacuation of the process chamber 50 before or at the same time as the start of the first step shown in FIG. In addition, in P2, it is desirable to evacuate the process chamber 50 for a predetermined time while stopping the supply of Ar gas into the process chamber at the same time as the end of the first or third step shown in FIG. Ar gas is supplied into the process chamber 50 through a gas inlet G1 of the film forming apparatus shown in FIGS. 1 and 9, and the process chamber 50 is exhausted through an exhaust section V50 of the film forming apparatus shown in FIGS.

[0103] FIG. 16 is a diagram showing an example of an output signal of power supply (SP) 1022 or 1023 or power supply (IG) 1023 when the getter process is repeated two or more times in the getter steps of the first embodiment (Examples 1-1 to 1-3) and the second embodiment (Examples 1-1 to 1-3, Examples 2-1 to 2-3, Examples 3-1 to 3-3). In this case, Ar gas is supplied to the process chamber 50. In the output signal of this power supply (SP) 1022 or power supply (IG) 1023, the period of the power supply output signal (period of the getter process) is P, the gas supply time (time to form a film of a substance with a high getter effect on gas or water (HO) remaining in the process chamber 50) is P1, the time to evacuate the process chamber 50 for a predetermined time is P2, and the duty ratio is D=P1 / P, and these are output in synchronization with the gas introduction system of FIG. 15. At P1, the power supplied to the process chamber 50 starts to be supplied to the process chamber simultaneously with the start of the first or third step shown in FIG. 3, and stops to be supplied to the process chamber simultaneously with the end of the first or third step. It is also desirable to start evacuation of the process chamber 50 before or at the same time as the start of the first step shown in FIG. In addition, in P2, it is desirable to evacuate the process chamber 50 for a predetermined time while stopping the supply of Ar gas into the process chamber at the same time as the end of the first or third step shown in FIG. Power is output into the process chamber 50 by an output signal from the power supply (SP) 1022 or power supply (IG) 1023 in FIGS. 2 and 10, and the process chamber 50 is evacuated by the exhaust unit V50 of the film forming apparatus in FIGS.

[0104] FIG. 17 is a diagram showing the relationship between the time of the gettering step and the water (H2O) partial pressure in the process chamber after the gettering step in the film forming methods of Example 1-2 of the first embodiment and Examples 1-2, 2-2, and 3-2 of the second embodiment. The inventors have discovered that, when taking into consideration the adhesion between the substrate and the adhesive film without reducing productivity, it is desirable that the water (H2O) partial pressure be 0.3 or less. When the getter process time is set to 300 seconds, the water (H2O) partial pressure becomes 0.3 when the getter process is repeated two or more times at a duty ratio of 50 percent, as shown in Figure 17. In contrast, when the getter process time is set to 300 seconds, the water (H2O) partial pressure becomes 0.45 when the getter process is performed once at a duty ratio of 100 percent, as shown in Figure 17. When the getter process is repeated two or more times at a duty ratio of 50 percent, the water (H2O) partial pressure can be reduced to approximately two-thirds (0.3 / 0.45) of the water (H2O) partial pressure when the getter process is performed once. On the other hand, as shown in Figure 17, when the getter process is performed once, the getter process time is 400 seconds until the HO partial pressure reaches 0.3. In this way, if the getter process is repeated two or more times at a duty ratio of 50%, the getter process time can be shortened by 100 seconds (400 seconds). Therefore, if the getter process is repeated two or more times at a duty ratio of 50%, the throughput can be reduced to about 3 / 4 (300 / 400) compared to when the getter process is performed once at a duty ratio of 100%. In addition, when the gettering process of the other film formation methods described above (Examples 1-1 and 1-3 of Embodiment 1, Examples 1-1, 1-3, 2-1, 2-3, 3-1, and 3-3 of Embodiment 2) is performed, a material with a large gettering effect on gas or water (H2O) remaining on the inner wall of the chamber of the process chamber 50 in the film formation area FFA and on the magnetic pole of the ion gun can be attached, thereby achieving better effects than the case shown in Figure 17.

[0105] FIG. 18 shows the relationship between the duty ratio and the water (HO) partial pressure in the process chamber after the gettering process for the film forming methods of Example 1-2 of the first embodiment and Examples 1-2, 2-2, and 3-2 of the second embodiment, when the gettering process lasts 300 seconds. As shown in FIG. 18, when the duty ratio is 0% and evacuation is performed without performing the gettering process, the water (HO) partial pressure is 0.6. As shown in FIG. 18, when the duty ratio is 100% and the gettering process is performed once, the water (HO) partial pressure is 0.45. In contrast, when the gettering process is repeated two or more times, the water (HO) partial pressure in the process chamber decreases, and the HO partial pressure is 0.3 or less in the duty ratio range from 34% to 66%. This reduces the water (HO) partial pressure to approximately half (0.3 / 0.6) compared to when the duty ratio is 0%. Furthermore, when the getter process is repeated two or more times, the water (H2O) partial pressure in the process chamber decreases, and the water (H2O) partial pressure is 0.3 or less in the duty ratio range of 34 to 66 percent, which is approximately 2 / 3 (0.3 / 0.45) of the water (H2O) partial pressure when the duty ratio is 100 percent. In addition, when the gettering process of the other film formation methods described above (Examples 1-1 and 1-3 of Embodiment 1, Examples 1-1, 1-3, 2-1, 2-3, 3-1, and 3-3 of Embodiment 2) is performed, a material with a large gettering effect on gas or water (H2O) remaining on the inner wall of the chamber of the process chamber 50 in the film formation area FFA and on the magnetic pole of the ion gun can be attached, thereby achieving better results than the case shown in Figure 18.

[0106] 19 is a diagram showing the relationship between the repeating operation and evacuation operation in the gettering process of the film formation methods of Example 1-2 of Embodiment 1 and Examples 1-2, 2-2, and 3-2 of the second embodiment and the water (HO) partial pressure in the process chamber. In the case of a process in which Ti film formation is performed only once while Ar gas is introduced into the process chamber (the right graph in FIG. 19), the water (HO) partial pressure is 0.45. In the case of a process in which Ti film formation is performed intermittently and repeatedly while Ar gas is introduced into the process chamber (no evacuation between Ti film formations) (corresponding to Patent Document 2, the center graph in FIG. 19), the water (HO) partial pressure is 0.4. In contrast, in the getter process of the present invention (left graph in FIG. 19), in which a getter process consisting of a series of operations of Ti film deposition and evacuation after Ti film deposition is repeated two or more times, the HO partial pressure becomes 0.3 or less, and the water (HO) partial pressure can be reduced to about 2 / 3 (0.3 / 0.45) compared to the process in which Ti film deposition is performed only once while Ar gas is introduced into the process chamber (right graph in FIG. 19), and to about 3 / 4 (0.3 / 0.4) compared to the process in which Ti film deposition is repeated intermittently while Ar gas is introduced into the process chamber (no evacuation between Ti film depositions) (corresponding to Patent Document 2, center graph in FIG. 19). Thus, according to the present invention, the water (H2O) partial pressure is 0.3 or less, and the adhesion between the substrate S and the adhesive film can be improved without reducing productivity.

[0107] Although the preferred first and second embodiments of the present invention have been described above, the present invention is not limited to these first and second embodiments, and various modifications and changes are possible within the scope of the gist of the present invention.

[0108] In the first and second embodiments, the getter material has been described as Ti, but it is not limited to Ti, and a substance having a large getter effect against oxygen and water, such as Ta, Zr, Cr, Nb, or Mo, can be used. Also, an alloy of two or more substances having a large getter effect can be used.

[0109] Although the adhesion film in the first and second embodiments has been described as a Ti film, it is not limited to a Ti film, and TiN, Ta, TaN, Ni, Cr, NiCr alloy, Ta alloy, Cu alloy, etc. can also be used. Considering productivity, a Cu film is formed on the adhesion film as a seed film for stable growth of Cu electroplating. Therefore, a Cu alloy is preferred for the adhesion film, as both the adhesion film and the seed film can be removed simultaneously with a Cu etching solution. Because Cu alloys do not have a significant gettering effect against oxygen or water, when a Cu alloy is used as the adhesion film, a material with a significant gettering effect is not mounted on the cathode. However, in the present invention, a getter material supply source MS is provided, and the gettering process can be carried out without being limited by the type of sputtered film.

[0110] Furthermore, although the seed film in the first and second embodiments has been described as a Cu film, it is not limited to a Cu film, and a CuAl alloy, a CuW alloy, or the like can also be used.

[0111] 15 and 16, it is preferable to control the gas introduction part G1 in FIG. 1 or 9 and the exhaust part V50 in FIG. 1 or 9 so that the duty ratio D=P1 / P is within the range of 34 percent to 66 percent and the duty ratio D=P1 / P in the third step and the fourth step is smaller than the duty ratio D=P1 / P in the first step and the second step. Furthermore, in Figures 15 and 16, it is preferable to control the gas introduction part G1 in Figure 1 or Figure 9 and the exhaust part V50 in Figure 1 or Figure 9 so that the duty ratio D = P1 / P is within the range of 34 percent to 66 percent and the duty ratio D = P1 / P in the fifth step and the sixth step is smaller than the duty ratio D = P1 / P in the third step and the fourth step. As a result, the time P1 of the third step is shorter than the time P1 of the first step, and the time P1 of the fifth step is shorter than the time P1 of the third step, so that relatively, the time P2 of the fourth step is longer than the time P2 of the second step, and the time P2 of the sixth step is longer than the time P2 of the fourth step. This increases the getter effect at the beginning of the gettering process when the water (H2O) partial pressure is high, so that the desired water (H2O) partial pressure can be reached in a shorter time, improving productivity.

Claims

1. a process chamber; a processing section provided in the process chamber for forming an adhesive film; A film forming apparatus having: The inner wall surface of the process chamber is resistant to gas or water (H ２ O) is formed from a material that has a large getter effect, the process chamber includes a cathode rotation means for rotating a holder that holds a plurality of targets and an ion gun; an adhesion prevention plate made of the material is disposed on the inner wall surface of the process chamber other than the film formation area; Gas or water (H ２ When performing gettering on O), the ion gun is directed to a side other than the film formation area, and the cathode rotation means is rotated so that the adhesion prevention plate is activated. A film forming apparatus characterized by:

2. a holder for holding a substrate in the process chamber; a driving unit that moves the holding unit that holds the substrate so that the substrate passes through a film formation region in the process chamber; a cooling unit that cools the holding unit; 2. The film forming apparatus according to claim 1, further comprising:

3. the deposition apparatus includes a platform that can be used to transfer the substrate between the deposition apparatus and another apparatus other than the deposition apparatus; a load lock chamber that can be used to transfer an unprocessed substrate provided from the platform and a substrate after film formation provided from the process chamber; 3. The film forming apparatus according to claim 2, further comprising:

4. 4. The film forming apparatus according to claim 1, wherein the processing section comprises a rotating cathode that rotates a support that holds a plurality of targets and an ion gun.

5. a process chamber; a processing section provided in the process chamber for forming an adhesive film; an exhaust unit capable of evacuating the inside of the process chamber; a gas inlet portion for introducing a gas for forming the adhesive film into the process chamber; and a control device for a film forming apparatus, the control device including a cathode rotation means for rotating a holder for holding a plurality of targets and an ion gun, the control device includes a storage unit that stores a control program; The control program In the process chamber, gas or water (H ２ a first step of depositing a film of a substance having a large getter effect against oxygen; a second step of evacuating the process chamber for a predetermined time after the first step; After the second step, gas or water (H ２ a third step of depositing a film of the substance having a large getter effect against oxygen; a fourth step of evacuating the process chamber for a predetermined time after the third step; an adhesion film forming step of forming the adhesion film on a substrate provided in the process chamber after the fourth step, an adhesion prevention plate made of the material is disposed on the inner wall surface of the process chamber other than the film formation area; The first step and the third step are Gas or water (H ２ When performing gettering on O), the ion gun is directed to a side other than the film formation area, and the cathode rotation means is rotated so that the adhesion prevention plate is activated, A control device characterized by controlling the exhaust part and the gas introduction part so that a duty ratio D = P1 / P is 34 percent or more and 66 percent or less, where P1 is the time for the first step or the third step, and P is the total time for the first step and the second step or the total time for the third step and the fourth step.

6. 6. The control device according to claim 5, wherein the gas to be supplied to the process chamber is started to be supplied into the process chamber simultaneously with the start of the first step or the third step using the gas inlet portion, and the supply into the process chamber is stopped simultaneously with the end of the first step or the third step.

7. 7. The control device according to claim 5, wherein the exhaust of the process chamber is started by using the exhaust unit at the same time as the start of the first step.

8. 7. The control device according to claim 5, wherein the power supplied to the process chamber is started using a power source simultaneously with the start of the first step or the third step, and stopped simultaneously with the end of the first step or the third step.

9. In the process chamber, gas or water (H ２ a first step of depositing a film of a substance having a large getter effect against oxygen; a second step of evacuating the process chamber for a predetermined time after the first step; After the second step, gas or water (H ２ a third step of depositing a film of a substance having a large getter effect against oxygen; a fourth step of evacuating the process chamber for a predetermined time after the third step; an adhesion film forming step of forming an adhesion film on the substrate provided in the process chamber after the fourth step, The inner wall surface of the process chamber is covered with gas or water (H ２ O), and an adhesion prevention plate formed of a material having a large getter effect against the The first step or the third step is A holder for holding the ion gun in the process chamber is rotated, and the ion gun is directed to a side not facing the substrate, and the adhesion prevention plate is sputtered, and gas or water (H ２ A film forming method for forming a film of a substance having a large getter effect against oxygen (O).

10. 10. The film forming method according to claim 9, wherein, when the time of the first step or the third step is P1, and the total time of the first step and the second step or the total time of the third step and the fourth step is P, a duty ratio D=P1 / P is 34 percent or more and 66 percent or less.

11. 11. The film forming method according to claim 9, further comprising, after the adhesion film forming step, a seed film forming step of forming a seed film on the adhesion film.

12. 11. The film forming method according to claim 9, further comprising an etching step of etching the surface of the substrate before the first step.

13. 11. The film forming method according to claim 9, further comprising, after the fourth step, an etching step of etching the surface of the substrate.

14. 11. The film forming method according to claim 9, wherein the substrate is any one of a silicon substrate, a square member made of glass or resin, and a resin film fixed to a support.

15. 11. The film forming method according to claim 9, wherein the adhesion film is any one of a Ti film, a TiN film, a Ta film, a TaN film, a Ni film, a Cr film, a NiCr alloy film, a Ta alloy film, and a Cu alloy film.

16. 12. The film forming method according to claim 11, wherein the seed film is one of a Cu film, a CuAl alloy film, and a CuW alloy film.

17. In the first step or the third step, a holder for holding the target for forming the adhesion film, the target for forming the seed film, and the ion gun is rotated, the ion gun is directed to a side not facing the substrate, and the gas or water (H ２ By etching a substance having a large getter effect against the gas or water (H O) remaining in the process chamber, ２ 12. The film forming method according to claim 11, wherein a substance having a large getter effect on oxygen (O) is formed into a film.

18. 18. The film forming method according to claim 17, wherein the first step or the third step rotates the holder to orient the target for forming the adhesion film toward a side not facing the substrate, and the adhesion film is formed on the inner wall surface of the process chamber.

19. 18. The film forming method according to claim 17, wherein the etching step involves rotating the holder and directing the ion gun toward a side facing the substrate to etch the surface of the substrate.

20. The film forming method according to claim 17, wherein the adhesion film forming step rotates the holder to orient a target for forming the adhesion film toward a side facing the substrate, and forms the adhesion film on the substrate.

21. The film forming method according to claim 17, characterized in that the seed film forming process rotates the holder, directs a target for forming the seed film to a side opposite the substrate, and forms the seed film on the adhesion film.

22. 11. The film forming method according to claim 9, wherein the gas supplied to the process chamber starts to be supplied to the process chamber simultaneously with the start of the first step or the third step, and stops to be supplied to the process chamber simultaneously with the end of the first step or the third step.

23. 11. The film forming method according to claim 9, wherein the evacuation of the process chamber is started simultaneously with the start of the first step.

24. 11. The film forming method according to claim 9, wherein the power supplied to the process chamber starts to be supplied to the process chamber simultaneously with the start of the first step or the third step, and stops to be supplied to the process chamber simultaneously with the end of the first step or the third step.

25. 6. The control device according to claim 5, wherein the exhaust unit and the gas introduction unit are controlled so that the duty ratio D=P1 / P in the third step and the fourth step is smaller than the duty ratio D=P1 / P in the first step and the second step, within a range of 34 percent or more and 66 percent or less.

26. 11. The film forming method according to claim 10, wherein the duty ratio D=P1 / P in the third and fourth steps is smaller than the duty ratio D=P1 / P in the first and second steps, within a range of 34 percent or more and 66 percent or less.

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