High frequency module and communication device

Abstract

To provide a high frequency module that can reduce deterioration of the characteristics of a first electronic component or a second electronic component due to unnecessary waves.SOLUTION: A high frequency module 1 includes a mounting substrate 51, a first electronic component 50A, a second electronic component 50B, and a radio wave absorbing material 55. The mounting substrate 51 has a first main surface 51a and a second main surface 51b that face each other. The first electronic component 50A is disposed on the first main surface 51a of the mounting substrate 51. The second electronic component 50B is disposed on the second main surface 51b of the mounting substrate 51. The radio wave absorbing material 55 is disposed on the mounting substrate 51 between the first electronic component 50A and the second electronic component 50B.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a plurality of electronic components arranged on a mounting board, and a communication device including the high-frequency module. [Background technology]

[0002] The high-frequency module described in Patent Document 1 includes a mounting substrate, a power amplifier (first electronic component), and a receiving filter (second electronic component). The mounting substrate has a first main surface and a second main surface that face each other. The power amplifier is disposed on the first main surface of the mounting substrate. The receiving filter is disposed on the second main surface of the mounting substrate. The power amplifier and the receiving filter are disposed adjacent to each other in a plan view from the thickness direction of the mounting substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2020-126921 Summary of the Invention [Problem to be solved by the invention]

[0004] In the configuration of Patent Document 1, unwanted waves generated in the power amplifier pass through the mounting board and leak into the receiving filter, and the unwanted waves may degrade the characteristics of the receiving filter.

[0005] In view of the above problems, an object of the present invention is to provide a high-frequency module and a communication device that can reduce deterioration of the characteristics of a first electronic component or a second electronic component due to unwanted waves. [Means for solving the problem]

[0006] A high-frequency module according to one aspect of the present invention includes a mounting substrate, a first electronic component, a second electronic component, and a radio wave absorbing material. The mounting substrate has a first main surface and a second main surface facing each other. The first electronic component is disposed on the first main surface of the mounting substrate. The second electronic component is disposed on the second main surface of the mounting substrate. The radio wave absorbing material is disposed on the mounting substrate between the first electronic component and the second electronic component.

[0007] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit connected to the high-frequency module and processing a high-frequency signal. [Effects of the Invention]

[0008] The high-frequency module and communication device according to the present invention have the advantage that degradation of the characteristics of the first electronic component or the second electronic component due to unwanted waves can be reduced. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a block diagram of a high-frequency module and a communication device according to the first embodiment. [Figure 2] FIG. 2 is a cross-sectional view of the high-frequency module. [Figure 3] FIG. 3 is a cross-sectional view of a high-frequency module according to a first modification of the first embodiment. [Figure 4] FIG. 4 is a cross-sectional view of a high-frequency module according to a fourth modification of the first embodiment. [Figure 5] FIG. 5 is a cross-sectional view of a high-frequency module according to a fifth and sixth modifications of the first embodiment. [Figure 6] FIG. 6 is a cross-sectional view of the high-frequency module according to the second embodiment. [Figure 7] FIG. 7 is a cross-sectional view of a high-frequency module according to a first modification of the second embodiment. [Figure 8] FIG. 8 is a cross-sectional view of a mounting substrate of a high-frequency module according to a third modification of the second embodiment. [Figure 9] FIG. 9 is a cross-sectional view of a mounting substrate of a high-frequency module according to a fourth modification of the second embodiment. [Figure 10] FIG. 10 is a cross-sectional view of the high-frequency module according to the third embodiment. [Figure 11] FIG. 11 is a cross-sectional view of a high-frequency module according to a second modification of the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] (Embodiment 1) The high-frequency module 1 and the communication device 30 according to the first embodiment will be described in detail with reference to the drawings.

[0011] (1) Overview 2, the high-frequency module 1 according to the first embodiment includes a mounting substrate 51, a first electronic component 50A, a second electronic component 50B, and a radio wave absorbing material 55. The mounting substrate 51 has a first main surface 51a and a second main surface 51b that face each other. The first electronic component 50A is disposed on the first main surface 51a of the mounting substrate 51. The second electronic component 50B is disposed on the second main surface 51b of the mounting substrate 51. The radio wave absorbing material 55 is disposed on the mounting substrate 51 between the first electronic component 50A and the second electronic component 50B.

[0012] According to this configuration, the radio wave absorber 55 can absorb unwanted waves (radio waves) propagating from the first electronic component 50A to the second electronic component 50B, or unwanted waves (radio waves) propagating from the second electronic component 50B to the first electronic component 50A. This reduces interference caused by unwanted waves between the first electronic component 50A and the second electronic component 50B. As a result, deterioration of the characteristics of the first electronic component 50A or the second electronic component 50B due to the unwanted waves can be reduced.

[0013] (2) Configuration of communication device As shown in FIG. 1, the communication device 30 is a communication device including a high-frequency module 1. The communication device 30 is, for example, a mobile terminal (e.g., a smartphone), but is not limited to the mobile terminal and may be, for example, a wearable terminal (e.g., a smart watch). The high-frequency module 1 is, for example, a module compatible with the 4G (fourth generation mobile communication) standard and the 5G (fifth generation mobile communication) standard. The 4G standard is, for example, 3GPP (registered trademark, Third Generation Partnership Project) or the LTE standard (registered trademark, Long Term Evolution). The 5G standard is, for example, 5G NR (New Radio).

[0014] In addition to the high-frequency module 1, the communication device 30 includes a signal processing circuit 2 and an antenna 3.

[0015] The high-frequency module 1 is configured to amplify a reception signal (high-frequency signal) received by the antenna 3 and output the amplified signal to the signal processing circuit 2. The high-frequency module 1 is also configured to amplify a transmission signal (high-frequency signal) output from the signal processing circuit 2 and transmit the amplified signal from the antenna 3. The high-frequency module 1 is controlled by the signal processing circuit 2, for example.

[0016] The signal processing circuit 2 is connected to the high-frequency module 1 and configured to process a received signal output from the high-frequency module 1. The signal processing circuit 2 is configured to process a transmission signal to be output to the high-frequency module 1. The signal processing circuit 2 includes an RF (Radio Frequency) signal processing circuit 2a and a baseband signal processing circuit 2b.

[0017] The RF signal processing circuit 2a is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high-frequency signals (transmitted signals and received signals). The RF signal processing circuit 2a performs signal processing such as down-conversion on received signals output from the high-frequency module 1, and outputs the received signals to the baseband signal processing circuit 2b. The RF signal processing circuit 2a also performs signal processing such as up-conversion on transmitted signals output from the baseband signal processing circuit 2b, and outputs the transmitted signals to the high-frequency module 1.

[0018] The baseband signal processing circuit 2b is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 2b outputs the received signal output from the RF signal processing circuit 2a to the outside. This output signal (received signal) is used, for example, as an image signal for image display or as an audio signal for calls. The baseband signal processing circuit 2b also generates a transmission signal from a baseband signal (for example, an audio signal and an image signal) input from the outside, and outputs the generated transmission signal to the RF signal processing circuit 2a.

[0019] (3) High-frequency module configuration 1, the high-frequency module 1 includes a plurality of external terminals 5a-5e, a plurality of electronic components 50, and a plurality of signal paths (a first signal path L1 and a second signal path L2 in the example of FIG. 1). In the example of FIG. 1, the plurality of electronic components 50 include a switch 6, a transmit filter 7, a receive filter 8, a power amplifier 10, a low-noise amplifier 11, matching circuits 13-16, and a controller 19.

[0020] The external terminal 5a is an antenna terminal to which the antenna 3 is connected. The external terminal 5b is connected to an output section (not shown) of the signal processing circuit 2 and is an input terminal to which a transmission signal output from the output section of the signal processing circuit 2 is input. The external terminal 5c is connected to an input section (not shown) of the signal processing circuit 2 and is an output terminal that outputs a reception signal processed by the high-frequency module 1 to the input section of the signal processing circuit 2. The external terminal 5d is connected to a signal output section (not shown) of the signal processing circuit 2 and is a signal input terminal that inputs a control signal from the signal processing circuit 2 to control the controller 19. The external terminal 5e is a ground terminal for maintaining the ground electrodes of each of the multiple electronic components 50 at ground potential. The external terminal 5e is electrically connected to ground and maintained at ground potential. By electrically connecting the ground electrodes of each of the multiple electronic components 50 to the external terminal 5e, the ground electrodes of each of the multiple electronic components 50 are maintained at ground potential.

[0021] Note that "A is connected to B" is not limited to cases where A is in direct contact with B, but also includes cases where A is in indirect contact with B via a conductive member. Also, "A is connected to B" includes cases where A is electrically connected to B (i.e., capable of conducting).

[0022] The switch 6 selects at least one signal path from among a plurality of signal paths (a first signal path L1 and a second signal path L2 in the example of FIG. 1 ) and connects the selected communication path to the antenna 3. The switch 6 is operated by a control signal from the controller 19. The switch 6 is, for example, a switch integrated circuit (IC). The switch 6 has a common terminal 6a and a plurality of selection terminals (a first selection terminal 6b and a second selection terminal 6c). The common terminal 6a can be selectively connected to at least one of the plurality of selection terminals (the first selection terminal 6b and the second selection terminal 6c). The common terminal 6a is connected to the external terminal 5a. The plurality of selection terminals are connected to a plurality of signal paths. In the example of FIG. 1 , the first selection terminal 6b is connected to the first signal path L1. The second selection terminal 6c is connected to the second signal path L2.

[0023] The first signal path L1 is a communication path connecting the first selection terminal 6b and the external terminal 5b. The first signal path L1 transmits an output signal (transmission signal) from the external terminal 5b to the first selection terminal 6b. The second signal path L2 is a communication path connecting the second selection terminal 6c and the external terminal 5c. The second signal path L2 transmits an output signal (reception signal) from the second selection terminal 6c to the external terminal 5c. In the following description, the first signal path L1 may be referred to as the transmission path L1, and the second signal path L2 may be referred to as the reception path L2.

[0024] The transmit filter 7 has a passband that is a transmission band (communication band) that includes the first communication band. The transmit filter 7 is provided on the transmit path L1. That is, the transmit filter 7 is connected between the first selection terminal 6b of the switch 6 and the external terminal 5b.

[0025] The transmit filter 7 has an input unit 7a and an output unit 7b. The input unit 7a is connected to the output unit 10b of the power amplifier 10 via a matching circuit 14. The output unit 7b is connected to the first selection terminal 6b of the switch 6 via a matching circuit 13. The transmit filter 7 passes an input signal (transmission signal) input to the input unit 7a by restricting it to a signal in the transmission band of the first communication band, and outputs the passed transmission signal from the output unit 7b.

[0026] The receiving filter 8 has a receiving band (communication band) that includes the second communication band as its passband. The second communication band may be a communication band that at least partially overlaps with the first communication band, or may be a communication band that does not overlap with the first communication band at all. The receiving filter 8 is provided in the receiving path L2. That is, the receiving filter 8 is connected between the second selection terminal 6c of the switch 6 and the external terminal 5c.

[0027] The receiving filter 8 has an input section 8a and an output section 8b. The input section 8a is connected to the second selection terminal 6c of the switch 6 via a matching circuit 15. The output section 8b is connected to the input section 11a of the low-noise amplifier 11 via a matching circuit 16. The receiving filter 8 passes the input signal (received signal) input to the input section 7a by restricting it to a signal in the receiving band of the second communication band, and outputs the passed received signal from the output section 8b.

[0028] The transmit filter 7 and the receive filter 8 are, for example, acoustic wave filters having piezoelectric substrates. More specifically, the transmit filter 7 and the receive filter 8 are, for example, SAW (Surface Acoustic Wave) filters, BAW (Bulk Acoustic Wave) filters, or FBAR (Film Bulk Acoustic Resonator) filters.

[0029] The power amplifier 10 is provided in the transmission path L1 between the input port 7a of the transmission filter 7 and the external terminal 5b. The power amplifier 10 has an input port 10a and an output port 10b. The input port 10a is connected to the external terminal 5b. The output port 10b is connected to the input port 7a of the transmission filter 7 via a matching circuit 14. The power amplifier 10 amplifies a transmission signal input to the input port 10a and outputs the amplified transmission signal from the output port 10b to the input port 7a of the transmission filter 7 via the matching circuit 14.

[0030] The low-noise amplifier 11 is provided in the receive path L2 between the output port 8b of the receive filter 8 and the external terminal 5c. The low-noise amplifier 11 has an input port 11a and an output port 11b. The input port 11a is connected to the output port 8b of the receive filter 8 via a matching circuit 16. The output port 11b is connected to the external terminal 5c. The low-noise amplifier 11 amplifies the receive signal input to the input port 11a and outputs the amplified receive signal from the output port 11b to the external terminal 5c.

[0031] The matching circuit 13 is provided in the transmission path L1 between the first selection terminal 6b of the switch 6 and the transmission filter 7. The matching circuit 13 is a circuit for achieving impedance matching between the switch 6 and the transmission filter 7. The matching circuit 13 includes, for example, an inductor connected in series to the transmission path L1, or an inductor connected between the transmission path L1 and ground.

[0032] The matching circuit 14 is provided in the transmission path L1 between the transmission filter 7 and the power amplifier 10. The matching circuit 14 is a circuit for achieving impedance matching between the transmission filter 7 and the power amplifier 10. The matching circuit 14 includes, for example, an inductor connected in series to the transmission path L1, or an inductor connected between the transmission path L1 and ground.

[0033] The matching circuit 15 is provided in the receive path L2 between the second selection terminal 6c of the switch 6 and the receive filter 8. The matching circuit 15 is a circuit for achieving impedance matching between the switch 6 and the receive filter 8. The matching circuit 15 includes, for example, an inductor connected in series to the receive path L2, or an inductor connected between the receive path L2 and ground.

[0034] The matching circuit 16 is provided in the receive path L2 between the receive filter 8 and the low-noise amplifier 11. The matching circuit 16 is a circuit for achieving impedance matching between the receive filter 8 and the low-noise amplifier 11. The matching circuit 16 includes, for example, an inductor connected in series to the receive path L2, or an inductor connected between the receive path L2 and ground.

[0035] The controller 19 controls the electronic components 50 (such as the switch 6, the power amplifier 10, and the low-noise amplifier 11) included in the high-frequency module 1 in accordance with a control signal from the signal processing circuit 2. The controller 19 is electrically connected to each of the electronic components 50. The controller 19 is also connected to a signal output unit of the signal processing circuit 2 via an external terminal 5d. The controller 19 controls each of the electronic components 50 in accordance with a control signal input from the signal output unit of the signal processing circuit 2 to the external terminal 5d.

[0036] (4) Operation The operation of the high frequency module 1 will now be described. When the high-frequency module 1 is transmitting, the common terminal 6a of the switch 6 is selectively connected to the first selection terminal 6b. As a result, the transmission signal processed by the signal processing circuit 2 is input from the signal processing circuit 2 to the external terminal 5b. The transmission signal input to the external terminal 5b then passes through the power amplifier 10, matching circuit 14, transmission filter 7, and matching circuit 13 in this order, and is output to the first selection terminal 6b of the switch 6. At this time, the transmission signal is amplified by the power amplifier 10, and unnecessary frequency components superimposed on the transmission signal are removed by the transmission filter 7. The transmission signal is then output from the first selection terminal 6b via the common terminal 6a to the external terminal 5a, and is transmitted to the outside from the antenna 3.

[0037] When the high-frequency module 1 is receiving a signal, the common terminal 6a of the switch 6 is selectively connected to the second selection terminal 6c. As a result, a received signal received by the antenna 3 flows from the common terminal 6a to the second selection terminal 6c. The received signal then passes through the matching circuit 15, the receiving filter 8, the matching circuit 16, and the low-noise amplifier 11 in that order, and is output to the external terminal 5c. At this time, the receiving filter 8 removes unnecessary frequency components superimposed on the received signal, and the received signal is amplified by the low-noise amplifier 11. The received signal is then output from the external terminal 5c to the signal processing circuit 2.

[0038] (5) Example of high-frequency module structure As shown in FIG. 2, in addition to the plurality of electronic components 50 and external terminals 5a to 5e described above, the high-frequency module 1 further includes a mounting substrate 51, a plurality of pad electrodes 52, a resin member 53, an external shielding layer 54, a radio wave absorbing material 55, a resin member 56, and a plurality of external electrodes 57.

[0039] The mounting board 51 is a board on which a plurality of electronic components 50 are arranged (mounted). The mounting board 51 has, for example, a rectangular flat plate shape when viewed from a plane in the thickness direction D1 of the mounting board 51. The mounting board 51 is, for example, a resin multilayer board. Note that the mounting board 51 is not limited to a resin multilayer board, and may be, for example, a printed wiring board, an LTCC (Low Temperature Co-fired Ceramics) board, or an HTCC (High Temperature Co-fired Ceramics) board.

[0040] The mounting substrate 51 has a first main surface 51a, a second main surface 51b, and an outer peripheral surface 51c. The first main surface 51a and the second main surface 51b are main surfaces that face each other in the thickness direction D1 of the mounting substrate 51. The outer peripheral surface 51c is a cylindrical surface that connects the outer peripheries of the first main surface 51a and the second main surface 51b. A plurality of pad electrodes 52 are provided on each of the first main surface 51a and the second main surface 51b of the mounting substrate 51. The plurality of pad electrodes 52 are portions to which external electrodes 50a (described later) of the plurality of electronic components 50 are connected, for example, by solder. A plurality of external terminals 5a to 5e of the high-frequency module 1 are provided on the second main surface 51b of the mounting substrate 51.

[0041] More specifically, the mounting substrate 51 is a multilayer substrate including, for example, a plurality of dielectric layers (insulating layers) and a plurality of conductive layers. Each of the plurality of conductive layers is provided between a plurality of dielectric layers. That is, the plurality of dielectric layers and the plurality of conductive layers are alternately stacked in the thickness direction D1 of the mounting substrate 51. The plurality of conductive layers are formed in a predetermined pattern determined for each layer. The material of each conductive layer is, for example, copper. Each of the plurality of conductive layers is electrically connected to another conductive layer, a plurality of pad electrodes 52, or a plurality of external terminals 5a to 5e by via electrodes provided in the mounting substrate 51.

[0042] The plurality of conductive layers includes a ground layer. The ground layer is electrically connected to the external terminal 5e. The external terminal 5e is a ground terminal electrically connected to the ground. By connecting the ground layer to the ground via the external terminal 5e, the potential of the ground layer is maintained at the ground potential. The ground layer is electrically connected to pad electrodes 52 which are electrically connected to the ground electrodes of the plurality of electronic components 50. The ground layer is electrically connected to an external shield layer 54 on the outer peripheral surface 51c of the mounting substrate 51.

[0043] The mounting board 51 is, for example, a board with a double-sided mounting structure in which a plurality of electronic components 50 are mounted on both sides (first main surface 51a and second main surface 51b) of the mounting board 51. The plurality of electronic components 50 are arranged (mounted) on the first main surface 51a or the second main surface 51b of the mounting board 51. In the example of FIG. 2, as an example, of the plurality of electronic components 50, only electronic components 50A, 50B, 50D, 50E, and 50F are illustrated.

[0044] More specifically, the electronic component 50 includes multiple external electrodes 50a and a component body 50b. The component body 50b is the portion of the electronic component 50 other than the multiple external electrodes 50a. The component body 50b includes a circuit section that controls the functions of the electronic component 50. The circuit section is electrically connected to the multiple external electrodes 50a. The component body 50b has, for example, a rectangular parallelepiped shape. Each of the multiple external electrodes 50a is electrically connected to one of the multiple pad electrodes 52 on the mounting substrate 51. The multiple external electrodes 50a are provided on the outer surface of the component body 50b. In the example of FIG. 2, in electronic components 50A, 50B, 50D, and 50E, the multiple external electrodes 50a are, for example, bump electrodes and are provided on the bottom surface 50d of the component body 50b. The bottom surface 50d of the component body 50b is the main surface of the component body 50b that faces the mounting substrate 51. In electronic component 50F, multiple external electrodes 50a are provided along the periphery of both end portions of component body 50b (both end portions in a direction parallel to first main surface 51a of mounting substrate 51). Multiple external electrodes 50a include the above-mentioned ground electrode.

[0045] The electronic component 50A is disposed on the first main surface 51a of the mounting board 51. The electronic component 50A is, for example, one of the transmitting electronic components 50. The transmitting electronic component 50 is an electronic component 50 among the multiple electronic components 50 that is used when transmitting a transmission signal and is an electronic component 50 that is provided on the transmission path L1. In the first embodiment, the first electronic component 50A is, for example, any one of the transmission filter 7, the power amplifier 10, the matching circuit 13, and the matching circuit 14. Hereinafter, the electronic component 50A will be referred to as the first electronic component 50A.

[0046] The electronic component 50B is disposed on the second main surface 51b of the mounting board 51. The electronic component 50B is, for example, one of the receiving electronic components 50. The receiving electronic component 50 is an electronic component 50 among the multiple electronic components 50 that is used when receiving a reception signal and is an electronic component 50 that is provided on the reception path L2. In the first embodiment, the second electronic component 50B is, for example, any one of the reception filter 8, the low-noise amplifier 11, the matching circuit 15, and the matching circuit 16. Hereinafter, the electronic component 50B will be referred to as the second electronic component 50B.

[0047] The first electronic component 50A and the second electronic component 50B are adjacent to each other in a plan view from the thickness direction D1 of the mounting substrate 51. Here, "A and B are adjacent to each other" means that no other electronic components 50 are disposed between A and B. Therefore, in a plan view from the thickness direction D1 of the mounting substrate 51, no other electronic components 50 are disposed between the first electronic component 50A and the second electronic component 50B.

[0048] The electronic components 50D and 50E are disposed on, for example, the first main surface 51a of the mounting substrate 51. The electronic components 50D and 50E may be transmitting electronic components 50 or receiving electronic components 50. In the example of Fig. 2, the electronic component 50D is, for example, an acoustic wave filter (e.g., the transmitting filter 7), the electronic component 50E is a receiving electronic component 50, and the electronic component 50F is an SMD (Surface Mount Device) such as an inductor or a capacitor.

[0049] The radio wave absorber 55 is disposed between the first electronic component 50A and the second electronic component 50B on the mounting board 51. The radio wave absorber 55 absorbs unwanted waves propagating from the first electronic component 50A, which is the transmitting electronic component 50, to the second electronic component 50B, which is the receiving electronic component 50. In this way, the radio wave absorber 55 reduces interference caused by unwanted waves between the first electronic component 50A and the second electronic component 50B. As a result, deterioration of the characteristics (reception characteristics) of the second electronic component 50B, which is the receiving electronic component 50, is reduced.

[0050] Note that "C is disposed between A and B" means that at least one of a plurality of line segments connecting an arbitrary point in the region of A and an arbitrary point in the region of B passes through the region of C. For example, in the example of Fig. 2, radio wave absorber 55 is disposed on mounting board 51 such that at least one of a plurality of line segments connecting an arbitrary point in the region of first electronic component 50A and an arbitrary point in the region of second electronic component 50B passes through the region of radio wave absorber 55 in a cross section seen from a cross section parallel to thickness direction D1 of mounting board 51.

[0051] The radio wave absorbing material 55 is provided on at least one of the first main surface 51a and the second main surface 51b of the mounting board 51. In the example of Fig. 2, the radio wave absorbing material 55 is provided on the first main surface 51a of the mounting board 51 (for example, the entire first main surface 51a).

[0052] The radio wave absorbing material 55 is provided in the form of a film (in other words, a layer) on the first main surface 51a of the mounting substrate 51. The radio wave absorbing material 55 contains a magnetic resin. The magnetic resin is a resin containing a magnetic material. The magnetic material is an insulating magnetic filler (for example, ferrite).

[0053] The plurality of external terminals 5a to 5e are arranged on the second main surface 51b of the mounting substrate 51. The plurality of external terminals 5a to 5e are, for example, columnar (for example, cylindrical) in shape.

[0054] The resin member 53 seals the multiple electronic components 50 arranged on the first main surface 51a of the mounting substrate 51. The resin member 53 contains a resin (e.g., epoxy resin). The resin member 53 may contain a filler in addition to the resin. The resin member 53 is provided on the first main surface 51a of the mounting substrate 51. The resin member 53 covers the first main surface 51a of the mounting substrate 51. The resin member 53 covers the multiple electronic components 50 arranged on the first main surface 51a of the mounting substrate 51.

[0055] The resin member 56 seals the electronic components 50 and the external terminals 5a-5e arranged on the second main surface 51b of the mounting substrate 51. The resin member 56 is made of, for example, the material of the resin member 53, contains a resin (e.g., epoxy resin), and may contain a filler in addition to the resin. The resin member 56 is provided on the second main surface 51b of the mounting substrate 51. The resin member 56 covers the second main surface 51b of the mounting substrate 51. The resin member 56 has a main surface 56s and an outer peripheral surface 56t. The main surface 56s is the main surface of the resin member 56 on the side opposite the mounting substrate 51. The outer peripheral surface 56t is a surface that forms the outer periphery of the resin member 56 and extends in a cylindrical shape from the outer periphery of the main surface 56s of the resin member 56 toward the mounting substrate 51. The resin member 56 covers the outer peripheral surfaces of the plurality of external terminals 5a to 5e, and the end faces 5s are exposed from a main surface 56s of the resin member 56. The main surface 56s of the resin member 56 is flush with the plurality of external terminals 5a to 5e.

[0056] The external electrodes 57 correspond one-to-one to the external terminals 5a to 5e and electrically connect the corresponding external terminals to pad electrodes on an external substrate (e.g., a motherboard). Each of the external electrodes 57 is in the form of a flat plate (or film). The external electrodes 57 are arranged on the main surface 56s of the resin member 56 so as to be electrically connected to the end surfaces 5s of the corresponding external terminals among the external terminals 5a to 5e.

[0057] Note that "A is connected to B" is not limited to cases where A is in direct contact with B, but also includes cases where A is in indirect contact with B via a conductive member. Also, "A is connected to B" includes cases where A and B are electrically connected (i.e., capable of being electrically conductive).

[0058] The external shield layer 54 is a member for electromagnetically shielding the inside and outside of the high-frequency module 1. The external shield layer 54 is made of a conductive material (e.g., copper). The external shield layer 54 is made of, for example, a single metal layer, but is not limited thereto and may have a multilayer structure in which multiple metal layers are stacked. The external shield layer 54 is provided to cover the outer surface 53r of the resin member 53. The outer surface 53r has a top surface 53s and an outer peripheral surface 53t. That is, the external shield layer 54 is provided to cover the top surface 53s and the outer peripheral surface 53t of the resin member 53. The external shield layer 54 is provided to cover the outer peripheral surface 51c of the mounting board 51. The external shield layer 54 is electrically connected to the ground layer of the mounting board 51 at the outer peripheral surface 51c of the mounting board 51. As a result, the potential of the external shield layer 54 is maintained at ground potential via the ground layer. The external shield layer 54 is provided to cover the outer peripheral surface 56t of the resin member 56.

[0059] (6) Shielding characteristics of radio wave absorbing materials 2, the radio wave absorber 55 is disposed between the first electronic component 50A and the second electronic component 50B on the mounting board 51. As a result, for example, unwanted waves (radio waves) emitted from the first electronic component 50A toward the second electronic component 50B are absorbed by the radio wave absorber 55 before reaching the mounting board 51. As a result, the unwanted waves emitted from the first electronic component 50A are reduced from reaching the second electronic component 50B.

[0060] In the example of FIG. 2, the radio wave absorber 55 is disposed on the first main surface 51a of the mounting board 51. As a result, a portion of the unwanted waves emitted from the first electronic component 50A toward the second electronic component 50B is absorbed by the radio wave absorber 55 as it passes through the radio wave absorber 55. A portion of the remaining unwanted waves that have passed through the radio wave absorber 55 is reflected by a ground layer (not shown) inside the mounting board 51 and is again absorbed by the radio wave absorber 55 as it passes through the radio wave absorber 55 again. Finally, the remaining unwanted waves reach the second electronic component 50B. In this way, by disposing the radio wave absorber 55 on the first main surface 51a of the mounting board 51 (i.e., the main surface on which the first electronic component 50A, which radiates unwanted waves, is disposed), the unwanted waves emitted from the first electronic component 50A are efficiently absorbed by the radio wave absorber 55. As a result, the radio wave absorber 55 can efficiently absorb the unwanted waves emitted from the first electronic component 50A. As a result, interference caused by unwanted waves between the first electronic component 50A and the second electronic component 50B is reduced by the radio wave absorber 55. This reduces deterioration in the characteristics of the first electronic component 50A or the second electronic component 50B.

[0061] (7) Effects The high-frequency module 1 according to the first embodiment includes a mounting substrate 51, a first electronic component 50A, a second electronic component 50B, and a radio wave absorbing material 55. The mounting substrate 51 has a first main surface 51a and a second main surface 51b that face each other. The first electronic component 50A is disposed on the first main surface 51a of the mounting substrate 51. The second electronic component 50B is disposed on the second main surface 51b of the mounting substrate 51. The radio wave absorbing material 55 is disposed on the mounting substrate 51 between the first electronic component 50A and the second electronic component 50B.

[0062] According to this configuration, unwanted waves propagating between the first electronic component 50A and the second electronic component 50B can be absorbed by the radio wave absorber 55. This reduces deterioration of the characteristics of the first electronic component 50A or the second electronic component 50B due to the unwanted waves.

[0063] Furthermore, the first electronic component 50A is a transmitting electronic component, and the second electronic component 50B is a receiving electronic component. This configuration can reduce interference caused by unwanted waves between the transmitting electronic component (first electronic component 50A) and the receiving electronic component (second electronic component 50B). As a result, deterioration of the characteristics of the second electronic component 50B due to unwanted waves can be reduced.

[0064] Moreover, the radio wave absorber 55 is disposed on the first main surface 51a of the mounting board 51. According to this configuration, when unwanted waves pass through the first main surface 51a of the mounting board 51, the unwanted waves can be effectively absorbed by the radio wave absorber 55.

[0065] Moreover, the communication device 30 according to the first embodiment includes a high-frequency module 1 and a signal processing circuit 2. The signal processing circuit 2 is connected to the high-frequency module 1 and processes high-frequency signals. With this configuration, it is possible to provide a communication device 30 that has the above-described effects of the high-frequency module 1.

[0066] (8) Variations The following describes modifications of embodiment 1. The modifications described below can be implemented in combination.

[0067] (9.1) Variation 1 In the first embodiment, the radio wave absorber 55 is disposed over the entire surface of the first main surface 51a of the mounting board 51 (see FIG. 2). However, as shown in FIG. 3, the radio wave absorber 55 may be selectively disposed in a partial region of the first main surface 51a of the mounting board 51. This allows unnecessary radio wave absorber 55 to be reduced, contributing to cost reduction.

[0068] (9.2) Variation 2 In the first embodiment, the first electronic component 50A may be an electronic component 50 provided on the reception path L2, and the second electronic component 50B may be an electronic component provided on the transmission path L1. In this case, the same effects as those of the first embodiment can be achieved.

[0069] (9.3) Variation 3 In the first embodiment, it is assumed that the first electronic component 50A is a transmitting electronic component and the second electronic component 50B is a receiving electronic component. However, the first electronic component 50A and the second electronic component 50B may each be a transmitting electronic component. In the third modification, the first electronic component 50A and the second electronic component 50B are each a transmitting electronic component. In the high-frequency module 1 according to the third modification, it is assumed that, for example, the mounting substrate 51 is provided with a plurality of transmission paths corresponding to a plurality of different communication bands (e.g., high band and middle band). In the third modification, the first electronic component 50A and the second electronic component 50B are electronic components provided in the different transmission paths and used when transmitting transmission signals in the different communication bands. For example, the first electronic component 50A is provided in a transmission path for transmitting a high-band transmission signal and is used when transmitting the high-band transmission signal. The second electronic component 50B is provided in a transmission path for transmitting a middle-band transmission signal and is used when transmitting the middle-band transmission signal.

[0070] In the third modification, similarly to the first embodiment, unwanted waves propagating from one of the first transmitting electronic component 50A and the second transmitting electronic component 50B to the other can be reduced by the radio wave absorber 55 arranged on the mounting board 51. As a result, it is possible to reduce deterioration of the characteristics of the first transmitting electronic component 50A and the second transmitting electronic component 50B due to the unwanted waves.

[0071] (9.4) Variation 4 4, in Modification 4, radio wave absorber 55 is arranged on second main surface 51b of mounting board 51 instead of on first main surface 51a of mounting board 51 in Embodiment 1. Even with this configuration, it is possible to achieve the same effects as in Embodiment 1.

[0072] (9.5) Variation 5 5, in Modification 5, in addition to the configuration of Embodiment 1, radio wave absorbers 55 are also arranged on the second main surface 51b of the mounting board 51. That is, in Modification 5, radio wave absorbers 55 are arranged on the first main surface 51a and the second main surface 51b of the mounting board 51. With this configuration, it is possible to further reduce the deterioration of the characteristics of the first electronic component or the second electronic component due to unwanted waves, compared to Embodiment 1.

[0073] (9.6) Variation 6 As shown in FIG. 5, in the sixth modification, the radio wave absorber 55 in the first embodiment also serves as the solder resist 60 (also called solder resist) provided on the mounting board 51.

[0074] More specifically, in the sixth modification, the high-frequency module 1 further includes a solder resist 60. The solder resist 60 is provided on at least one of the first main surface 51a and the second main surface 51b of the mounting board 51 (on both surfaces in the example of FIG. 5). The solder resist 60 is provided, for example, on the entire surface of each of the first main surface 51a and the second main surface 51b of the mounting board 51. The solder resist 60 is made of a material in which the material of the solder resist 60 (a material having insulating properties and heat resistance) contains the material of the radio wave absorber 55. The solder resist 60 functions as both the solder resist 60 and the radio wave absorber 55. In the sixth modification, the solder resist 60 also serves as the radio wave absorber 55.

[0075] The high-frequency module 1 according to the sixth modification includes a solder resist 60. The solder resist 60 is provided on at least one of the first main surface 51a and the second main surface 51b of the mounting board 51. The solder resist 60 contains the material of a radio wave absorber 55. The solder resist 60 also serves as the radio wave absorber 55. With this configuration, the radio wave absorber 55 also serves as the solder resist 60, thereby reducing costs.

[0076] (Embodiment 2) A high-frequency module 1 according to the second embodiment will be described with reference to Fig. 6. In the following description, the same components as those in the first embodiment will be denoted by the same reference numerals as in the first embodiment, and the description will be omitted, and only the parts that are different from the first embodiment will be described.

[0077] (1) Composition 6, in the second embodiment, the radio wave absorber 55 is disposed inside the mounting substrate 51. The radio wave absorber 55 is disposed in a layered manner inside the mounting substrate 51. In the example of FIG. 6, the radio wave absorber 55 is disposed so as to occupy a partial region of the mounting substrate 51 when viewed from a plane in the thickness direction D1 of the mounting substrate 51.

[0078] (2) Effects In the high-frequency module 1 according to the second embodiment, the radio wave absorber 55 is provided inside the mounting substrate 51. With this configuration, the combined thickness of the radio wave absorber 55 and the mounting substrate 51 can be prevented from increasing compared to when the radio wave absorber 55 is provided on a main surface (the first main surface 51a or the second main surface 51b) of the mounting substrate 51. Because the radio wave absorber 55 is protected by the mounting substrate 51, deterioration of the radio wave absorber 55 can be prevented.

[0079] (3) Variations The following describes a modified example of embodiment 2. The modified examples described below can be implemented in combination.

[0080] (3.1) Variation 1 (3.1.1) Composition As shown in FIG. 7, the high-frequency module 1 according to the first modification further includes one or more (one in the example of FIG. 7) third electronic components 50C in addition to the components of the high-frequency module 1 according to the second preferred embodiment.

[0081] The third electronic component 50C is included in the multiple electronic components 50 provided in the high-frequency module 1. The third electronic component 50C is disposed inside the mounting substrate 51. That is, the third electronic component 50C is electrically connected to multiple conductor layers provided inside the mounting substrate 51. The third electronic component 50C is, for example, an inductor or a capacitor. That is, the mounting substrate 51 of the first modification is a component-embedded substrate that incorporates the third electronic component 50C.

[0082] In addition to the arrangement of the radio wave absorber 55 of the second embodiment, the radio wave absorber 55 of the first modification example is arranged inside the mounting board 51 between one of the first electronic component 50A and the second electronic component 50B (the first electronic component 50A in the example of FIG. 7) and the third electronic component 50C. In the example of FIG. 7, the radio wave absorber 55 is also arranged inside the mounting board 51 between the third electronic component 50C and the electronic components 50D and 50E.

[0083] In the first modification, unwanted waves leaking from one of the first electronic component 50A and the third electronic component 50C to the other are absorbed by the radio wave absorber 55. This reduces the deterioration of the characteristics of the first electronic component 50A or the third electronic component 50C due to the unwanted waves. Furthermore, unwanted waves leaking from one of the electronic components 50D, 50E and the third electronic component 50C to the other are absorbed by the radio wave absorber 55. This reduces the deterioration of the characteristics of the electronic components 50D, 50E or the third electronic component 50C due to the unwanted waves.

[0084] (3.1.2) Effect The high-frequency module 1 according to the first modification further includes a third electronic component 50C disposed inside the mounting substrate 51. The radio wave absorber 55 is disposed between the third electronic component 50C and one of the first electronic component 50A and the second electronic component 50B. With this configuration, the radio wave absorber 55 can suppress interference caused by unwanted waves between the third electronic component 50C and one of the first electronic component 50A and the second electronic component 50B. As a result, deterioration in the characteristics of the first electronic component 50A, the second electronic component 50B, or the third electronic component 50C can be reduced.

[0085] (3.2) Variation 2 In the first embodiment and the first modification, the radio wave absorbing material 55 is disposed in a partial region of the mounting substrate 51 when viewed from above in the thickness direction D1 of the mounting substrate 51. However, the radio wave absorbing material 55 may be disposed over the entire mounting substrate 51 when viewed from above in the thickness direction of the mounting substrate 51.

[0086] (3.3) Variation 3 (3.3.1) Composition As shown in FIG. 8, in the third modification, at least one of the insulating layers 71a to 71f of the mounting substrate 51 (all of them in the example of FIG. 8) also serves as the radio wave absorber 55.

[0087] 8, in Modification 3, mounting substrate 51 includes a plurality of insulating layers 71a-71f, a plurality of conductor layers 72a-72e, and solder resists 73a and 73b. In the example of Fig. 8, a plurality of electronic components 50, a plurality of pad electrodes 52, a plurality of external terminals 5a-5e, resin members 53 and 56, external electrode 57, and external shield layer 54 are not shown.

[0088] The insulating layers 71a to 71f are made of a resin having insulating properties (insulating resin). More specifically, in at least one of the insulating layers 71a to 71f (all of the insulating layers in the example of FIG. 8 ), at least a portion of the insulating layer (all of the insulating layers in the example of FIG. 8 ) in plan view from the thickness direction D1 of the mounting substrate 51 is made of a material in which the material of the radio wave absorber 55 is contained in the insulating resin. That is, at least a portion of the insulating layer (for example, all of the insulating layers) in at least one of the insulating layers 71a to 71f (for example, all of the insulating layers) contains the material of the radio wave absorber 55. As a result, the at least a portion of the insulating layer (for example, all of the insulating layers) in at least one of the insulating layers 71a to 71f functions as the radio wave absorber 55.

[0089] The plurality of conductor layers 72a to 72e are provided between the plurality of insulating layers 71a to 71f, respectively. That is, the insulating layers 71a to 71f and the conductor layers 72a to 72e are alternately stacked. The plurality of conductor layers 72a to 72e are made of, for example, copper.

[0090] Solder resist 73a is laminated on the outer main surface (for example, the entire main surface) of insulating layer 71a. Solder resist 73b is laminated on the outer main surface (for example, the entire main surface) of insulating layer 71f.

[0091] In the third modification, the radio wave absorber 55 is shared by at least a portion (all in the example of FIG. 8) of the region of at least one (all in the example of FIG. 8) of the insulating layers 71a to 71f.

[0092] (3.3.2) Effect In the third modification, the mounting board 51 includes a plurality of insulating layers 71a-71f and a plurality of conductor layers 72a-72e. The plurality of conductor layers 72a-72e are respectively provided between the plurality of insulating layers 71a-71f. In at least one of the plurality of insulating layers 71a-71f, at least a portion of the region in a plan view in the thickness direction D1 of the mounting board 51 contains the material of the radio wave absorber 55. The radio wave absorber 55 is shared by at least a portion (all in the example of FIG. 8) of the region R1 of at least one of the plurality of insulating layers 71a-71b of the mounting board 51. With this configuration, the radio wave absorber 55 is shared by at least a portion of the region R1 of at least one of the plurality of insulating layers 71a-71b of the mounting board 51, so there is no need to secure a dedicated space for the radio wave absorber 55 inside the mounting board 51. As a result, the radio wave absorbing material 55 can be provided inside the mounting substrate 51 while preventing the mounting substrate 51 from becoming too large.

[0093] (3.4) Variation 4 In the third modification of the second embodiment, when only a partial region of one or more of the insulating layers 71a-71f of the mounting board 51, as viewed in a plan view in the thickness direction D1 of the mounting board 51, doubles as the radio wave absorber 55, the mounting board 51 may be configured as shown in FIG. 9. That is, in one or more (one in FIG. 9) insulating layers 71b of the insulating layers 71a-71f, a portion overlapping with a partial region R1 of the mounting board 51 as viewed in a plan view in the thickness direction D1 contains the material of the radio wave absorber 55. In addition, the portions overlapping with the partial region R1 of the conductor layer 72a above the insulating layer 71b and the conductor layer 72b below the insulating layer 71b are removed. Then, the insulating layers 71a-71f, the conductor layers 72a-72e, and the solder resists 73a and 73b are joined together without any gaps in the thickness direction D1 of the mounting board 51. As a result, only the portions of the insulating layers 71a to 71f that overlap with the region R1 in plan view in the thickness direction D1 of the mounting substrate 51 can also be used as the radio wave absorber 55.

[0094] (Embodiment 3) A high-frequency module 1 according to a third embodiment will be described with reference to Fig. 10. In the following description, the same components as those in the first embodiment will be denoted by the same reference numerals as those in the first embodiment, and the description will be omitted. Only the differences from the first embodiment will be described. In the third embodiment, the radio wave absorber 55 in the first embodiment will be referred to as a first radio wave absorber 55.

[0095] (1) Composition As shown in FIG. 10, the high-frequency module 1 according to the third embodiment further includes a second radio wave absorber 80 in addition to the components of the high-frequency module 1 according to the first embodiment.

[0096] The second radio wave absorber 80 is a radio wave absorber different from the first radio wave absorber 55. The second radio wave absorber 80 is made of the same material as the first radio wave absorber 55. The second radio wave absorber 80 is disposed on the main surface 56s of the resin member 56 (the main surface opposite the mounting board 51) between two adjacent external electrodes 57 among the plurality of external electrodes 57. Here, "two external electrodes 57 adjacent to each other" means that no other external electrodes or electronic components are disposed between the two external electrodes 57. In the example of FIG. 10 , the second radio wave absorber 80 is disposed on the entire main surface 56s of the resin member 56 except for the plurality of external electrodes 57. The second radio wave absorber 80 is in the form of a film (or a layer).

[0097] The main surface 80s of the second radio wave absorber 80 is flush with the main surfaces 57s of the two adjacent external electrodes 57. The main surface 80s of the second radio wave absorber 80 is the main surface of the second radio wave absorber 80 opposite to the mounting board 51. The main surface 57s of the external electrode 57 is the main surface of the external electrode 57 opposite to the mounting board 51.

[0098] The second radio wave absorber 80 is disposed on the main surface 56s of the resin member 56, between two adjacent external electrodes 57 among the plurality of external electrodes 57. As a result, for example, unwanted waves (radio waves) emitted from one of the two adjacent external electrodes 57 to the other are absorbed by the second radio wave absorber 80 disposed between the two adjacent external electrodes 57. This reduces the amount of unwanted waves emitted from one of the two external electrodes 57 reaching the other. As a result, the second radio wave absorber 80 reduces interference caused by unwanted waves between the two adjacent external electrodes 57.

[0099] (2) Effects The high-frequency module 1 according to the third embodiment includes a plurality of external terminals 5a-5e, a resin member 56, a plurality of external electrodes 57, and a second radio wave absorber 80. The plurality of external terminals 5a-5e are disposed on the second main surface 51b of the mounting substrate 51. The resin member 56 is provided on the second main surface 51b of the mounting substrate 51 and covers the outer peripheral surfaces of the second electronic component 50B and the plurality of external terminals 5a-5e, while exposing the end faces 5s of the plurality of external terminals 5a-5e. The plurality of external electrodes 57 are disposed on a main surface 56s of the resin member 56 opposite the mounting substrate 51 and are connected to the end faces 5s of the plurality of external terminals 5a-5e. The second radio wave absorber 80 is disposed on the main surface 56s of the resin member 56, between two adjacent external electrodes 57 among the plurality of external electrodes 57. The second radio wave absorber 80 is a radio wave absorber separate from the first radio wave absorber 55. According to this configuration, the second radio wave absorber 80 can suppress interference between two adjacent external electrodes 57 due to unwanted waves.

[0100] (3) Variations A description will be given of modifications of embodiment 3. The following modifications can be implemented in combination.

[0101] (3.1) Variation 1 In the third embodiment, the main surface 80s of the second radio wave absorber 80 may be disposed closer to the mounting board 51 than the main surfaces 57s of the external electrodes 57 on both sides of the second radio wave absorber 80 (i.e., two adjacent external electrodes 57). In other words, the distance between the main surface 80s of the second radio wave absorber 80 and the second main surface 51b of the mounting board 51 is shorter than the distance between the main surface 57s of the external electrode 57 and the second main surface 51b of the mounting board 51. In this case, a portion of the side surface of each of the two adjacent external electrodes 57 facing the second radio wave absorber 80 (e.g., an edge portion of the side surface on the main surface 57s side) is exposed from the second radio wave absorber 80. This increases the connection area between the two adjacent external electrodes 57 and the pad electrodes of an external board (e.g., a motherboard) that are connected to these external electrodes 57. As a result, the connection reliability between the external electrodes 57 and the pad electrodes can be improved.

[0102] (3.2) Variation 2 As shown in FIG. 11 , in Modification 2, in Embodiment 3, a plurality of voids S1 are provided. The voids S1 are provided between at least one (both in the example of FIG. 11 ) of two adjacent external electrodes 57 and the second radio wave absorber 80. The voids S1 expose a side surface 57t of at least one of the external electrodes 57 that faces the second radio wave absorber 80. The voids S1 are formed, for example, by inclining a side surface of the second radio wave absorber 80 that faces the side surface 57t of the external electrode 57. By providing the voids S1 in this way, the side surface 57t of the external electrode 57 is exposed from the second radio wave absorber 80. This makes it possible to increase the connection area between the external electrode 57 and the pad electrode of an external substrate (e.g., a motherboard) by soldering. As a result, it is possible to improve the connection reliability between the external electrode 57 and the pad electrode.

[0103] In the high-frequency module according to the third modification, a gap S1 is provided between at least one of two adjacent external electrodes 57 and the second radio wave absorber 80. The gap S1 exposes a side surface 57t of the at least one external electrode 57 that faces the second radio wave absorber 80. This configuration can improve the connection reliability when connecting the external electrode 57 to a pad electrode of an external substrate (e.g., a motherboard) by soldering.

[0104] The above-described embodiments and modifications are merely a part of the various embodiments and modifications of the present disclosure. Furthermore, the embodiments and modifications can be modified in various ways depending on the design, etc., as long as the object of the present disclosure can be achieved. Furthermore, embodiments 1 to 3 and their modifications may be implemented in combination.

[0105] (Aspect) The present specification discloses the following aspects.

[0106] The high-frequency module (1) of the first aspect includes a mounting substrate (51), a first electronic component (50A), a second electronic component (50B), and a radio wave absorbing material (55). The mounting substrate (51) has a first main surface (51a) and a second main surface (51b) facing each other. The first electronic component (50A) is disposed on the first main surface (51a) of the mounting substrate (51). The second electronic component (50B) is disposed on the second main surface (51b) of the mounting substrate (51). The radio wave absorbing material (55) is disposed on the mounting substrate (51) between the first electronic component (50A) and the second electronic component (50B).

[0107] According to this configuration, the radio wave absorber 55 can absorb unwanted waves (radio waves) propagating from the first electronic component 50A to the second electronic component 50B or from the second electronic component 50B to the first electronic component 50A. This reduces interference between the first electronic component 50A and the second electronic component 50B due to unwanted waves. As a result, deterioration of the characteristics of the first electronic component 50A or the second electronic component 50B due to the unwanted waves can be reduced.

[0108] In the high frequency module (1) of the second embodiment, the first electronic component (50A) is a transmitting electronic component in the first embodiment, and the second electronic component (50B) is a receiving electronic component.

[0109] This configuration reduces interference caused by unwanted waves between the transmitting electronic component (first electronic component 50A) and the receiving electronic component (second electronic component 50B), thereby reducing deterioration of the characteristics of the second electronic component 50B due to unwanted waves.

[0110] In the high frequency module (1) of the third aspect, in the first aspect, the first electronic component (50A) and the second electronic component (50B) are each an electronic component for transmission.

[0111] This configuration reduces interference caused by unwanted waves between the transmitting electronic component (first electronic component 50A) and the transmitting electronic component (second electronic component 50B), thereby reducing deterioration of the characteristics of the first electronic component 50A or the second electronic component 50B due to unwanted waves.

[0112] In the high-frequency module (1) of the fourth aspect, in any one of the first to third aspects, the radio wave absorber (55) is arranged on at least one of the first main surface (51a) and the second main surface (51b) of the mounting board (51).

[0113] According to this configuration, the unwanted waves are transmitted to the main surface (the first main surface (51a) or the second main surface (51b)) of the mounting substrate (51). When the unwanted waves pass through the second main surface (51b), the unwanted waves can be effectively absorbed by the radio wave absorbing material (55).

[0114] The high-frequency module (1) of the fifth aspect is the fourth aspect, and further includes a solder resist (60). The solder resist (60) is provided on at least one of the first main surface (51a) and the second main surface (51b) of the mounting board (51). The solder resist (60) contains a material of the radio wave absorber (55).

[0115] According to this configuration, the radio wave absorbing material (55) also serves as the solder resist (60), thereby reducing costs.

[0116] In the high-frequency module (1) of the sixth aspect, in any one of the first to third aspects, the radio wave absorber (55) is provided inside the mounting board (51).

[0117] With this configuration, compared to when the radio wave absorbing material (55) is provided on the main surface (first main surface (51a) or second main surface (51b)) of the mounting board (51), it is possible to prevent the combined thickness of the radio wave absorbing material (55) and the mounting board (51) from increasing. Since the radio wave absorbing material (55) is protected by the mounting board (51), deterioration of the radio wave absorbing material (55) can be prevented.

[0118] The high-frequency module (1) of the seventh aspect is the same as that of the sixth aspect, and further includes a third electronic component (50C). The third electronic component (50C) is disposed inside the mounting board (51). The radio wave absorber (55) is disposed between the third electronic component (50C) and one of the first electronic component (50A) and the second electronic component (50B).

[0119] According to this configuration, the radio wave absorber 55 can suppress interference caused by unwanted waves between one of the first electronic component 50A and the second electronic component 50B and the third electronic component 50C, thereby reducing deterioration in the characteristics of the first electronic component 50A, the second electronic component 50B, or the third electronic component 50C.

[0120] In the high-frequency module (1) of the eighth aspect, in the sixth or seventh aspect, the mounting board (51) includes a plurality of insulating layers (71a to 71f) and a plurality of conductor layers (72a to 72e). The plurality of conductor layers (72a to 72e) are provided between the plurality of insulating layers (71a to 71f). In at least one of the plurality of insulating layers (71a to 71f), at least a partial region (R1) in a plan view from a thickness direction (D1) of the mounting board (51) contains a material of the radio wave absorber (55).

[0121] According to this configuration, the insulating layers (71a-71f) of the mounting board (51) also serve as the radio wave absorber (55), eliminating the need to secure space for arranging the radio wave absorber (55) inside the mounting board (51).As a result, the radio wave absorber (55) can be provided inside the mounting board (51) without increasing the size of the mounting board (51).

[0122] A high-frequency module (1) according to a ninth aspect is any one of the first to eighth aspects, further comprising a plurality of external terminals (5a-5e), a resin member (56), a plurality of external electrodes (57), and a second radio wave absorber (80). The plurality of external terminals (5a-5e) are disposed on a second main surface (51b) of the mounting board (51). The resin member (56) is provided on the second main surface (51b) of the mounting board (51) and covers the second electronic component (50B) and the outer peripheral surfaces of the plurality of external terminals (5a-5e), while exposing end faces (5s) of the plurality of external terminals (5a-5e). The plurality of external electrodes (57) are disposed on a main surface (56s) of the resin member (56) opposite the mounting board (51) and are connected to the end faces (5s) of the plurality of external terminals (5a-5e). The second radio wave absorber (80) is disposed between two adjacent external electrodes (57) of the plurality of external electrodes (57) on the main surface (56s) of the resin member (56). The second radio wave absorber (80) is a radio wave absorber different from the first radio wave absorber (55), which is the radio wave absorber (55).

[0123] According to this configuration, the second radio wave absorber (80) can suppress interference caused by unwanted waves between two adjacent external electrodes (57).

[0124] In a high-frequency module (1) of a tenth aspect, in the ninth aspect, a gap (S1) is provided between at least one of two adjacent external electrodes (57) and the second radio wave absorber (80). The gap (S1) exposes a side surface (57t) of the at least one external electrode (57) facing the second radio wave absorber (80).

[0125] This configuration improves the reliability of connection when connecting the external electrodes (57) to the pad electrodes of the external substrate with solder.

[0126] A communication device (30) of an eleventh aspect includes the high-frequency module (1) of any one of the first to tenth aspects and a signal processing circuit (2). The signal processing circuit (2) is connected to the high-frequency module (1) and processes a high-frequency signal.

[0127] According to this configuration, it is possible to provide a communication device (30) that exhibits the effects of the high frequency module (1). [Explanation of symbols]

[0128] 1. High frequency module 2. Signal processing circuit 2a RF signal processing circuit 2b Baseband signal processing circuit 3 Antennas 5. Radio wave absorbing material 5a~5e External terminal 5s end face 6 Switch 6a common terminal 6b First selection terminal 6c Second selection terminal 7 Outbound Filters 7a Input section 7b Output section 8 Receive Filter 8a Input section 8b Output section 10. Power Amplifier 10a Input section 10b Output section 11 Low-noise amplifier 11a Input section 11b Output section 13~16 matching circuit 19 Controller 30 Communication equipment 50, 50D, 50E, 50F Electronic Components 50A First Electronic Component 50B Secondary Electronic Components 50C Third Electronic Parts 50a External electrode 50b Part body 50d bottom side 51 Mounting board 51a 1st principal surface 51b Second principal surface 51c Outer surface 52 Pad electrode 53,56 Resin parts 53r outer surface 53s top 53t outer surface 54 outer shield layer 55 Radio wave absorber (first radio wave absorber) 56s main surface 56t outer surface 57 External electrode 57s main surface 57t side 60 Solder resist 71a~71f Insulation layer 72a~72e Conductor layer 73a, 73b Solder resist 80 Second radio wave absorber 80s main surface D1 thickness direction L1 Transmission Path L2 receive route R1 area S1 void

Claims

1. a mounting substrate having a first main surface and a second main surface facing each other; a first electronic component disposed on the first main surface of the mounting substrate; a second electronic component disposed on the second main surface of the mounting substrate; a radio wave absorbing material disposed between the first electronic component and the second electronic component on the mounting board; High frequency module.

2. the first electronic component is a transmitting electronic component, the second electronic component is a receiving electronic component; The high frequency module according to claim 1 .

3. the first electronic component and the second electronic component are each a transmitting electronic component; The high frequency module according to claim 1 .

4. the radio wave absorbing material is disposed on at least one of the first main surface and the second main surface of the mounting substrate; The high frequency module according to any one of claims 1 to 3.

5. a solder resist provided on at least one of the first main surface and the second main surface of the mounting substrate; the solder resist contains a material of the radio wave absorber; The high frequency module according to claim 4 .

6. the radio wave absorbing material is provided inside the mounting substrate; The high frequency module according to any one of claims 1 to 3.

7. a third electronic component disposed inside the mounting substrate; the radio wave absorbing material is disposed between one of the first electronic component and the second electronic component and the third electronic component; The high frequency module according to claim 6.

8. The mounting board is a plurality of insulating layers; a plurality of conductor layers provided between the plurality of insulating layers, In at least one of the plurality of insulating layers, at least a portion of a region in a plan view in a thickness direction of the mounting substrate contains a material of the radio wave absorbing material. The high frequency module according to claim 6.

9. a plurality of external terminals arranged on the second main surface of the mounting substrate; a resin member provided on the second main surface of the mounting substrate, covering outer peripheral surfaces of the second electronic component and each of the plurality of external terminals, and exposing end faces of each of the plurality of external terminals; a plurality of external electrodes disposed on a main surface of the resin member opposite to the mounting substrate, the external electrodes being connected to the end surfaces of the plurality of external terminals; a second radio wave absorbing material that is different from the first radio wave absorbing material and that is disposed on the main surface of the resin member between two adjacent external electrodes of the plurality of external electrodes, The high frequency module according to any one of claims 1 to 3.

10. a gap is provided between at least one of the two adjacent external electrodes and the second radio wave absorber, exposing a side surface of the at least one external electrode facing the second radio wave absorber; The high frequency module according to claim 9 .

11. A high-frequency module according to any one of claims 1 to 3; a signal processing circuit connected to the high-frequency module and processing a high-frequency signal; Communication equipment.

Images