Display device

Abstract

To provide a display device in which operation stability of a peripheral circuit part is high.SOLUTION: A display device includes a first substrate and a second substrate. On a first surface of the first substrate, a first insulating layer is provided. On a first surface of the second substrate, a second insulating layer is provided. The first surface of the first substrate and the first surface of the second substrate have the same area. The first surface of the first substrate and the first surface of the second substrate face each other. Between the first insulating layer and the second insulating layer, an adhesive layer is provided. A protective film includes a region in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a display device and an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field relates to an article, a method, or a manufacturing method. is a process, machine, manufacture, or composition of matter. Therefore, one aspect of the present invention disclosed in this specification more specifically relates to The technical fields of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, and input devices. , input / output devices, their driving methods, or their manufacturing methods, as examples. can be done.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers to semiconductor devices in general, including semiconductor elements such as transistors, semiconductor circuits, arithmetic units, and memory devices. The device is one aspect of a semiconductor device. Optical devices, power generation devices (including thin-film solar cells, organic thin-film solar cells, etc.), and electronic devices are all semiconductor devices. The semiconductor device may include a conductor device. [Background technology]

[0004] Displays using thin-film transistors have become widespread and indispensable in people's lives. Furthermore, these displays are thin and lightweight, making them suitable for portable information terminals and other devices. It has become indispensable in various fields.

[0005] In addition, display devices that have a display area (pixel section) and peripheral circuits (drive section) on the same substrate have become widespread. For example, Patent Document 1 discloses a method for manufacturing a display device using a transistor that uses an oxide semiconductor. The technology used in the peripheral circuits is disclosed. By forming the display area and the peripheral circuits simultaneously, The manufacturing cost can be reduced. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-123861 Summary of the Invention [Problem to be solved by the invention]

[0007] When manufacturing a display device, ensure that the display area is as large as possible on the viewing side (display surface side). In order to expand the display area, it is necessary to increase the area from the edge of the display area to the edge of the substrate. It is necessary to make the frame, which is the area of ​​the image, as narrow as possible.

[0008] On the other hand, the driver circuits around the display area are located in the frame area, widening the display area. However, if the frame is narrowed, the drive circuit will be closer to the edge of the substrate, and the influence of atmospheric components will be reduced. The reliability of the transistor characteristics of the drive circuit decreases due to penetration, etc., and the circuit operation becomes unstable. There is a risk.

[0009] An object of one embodiment of the present invention is to provide a display device having a peripheral circuit portion with high operational stability. Let's say.

[0010] Another object of one embodiment of the present invention is to provide a display device with a narrow frame.

[0011] Another object of one embodiment of the present invention is to provide a lightweight display device.

[0012] Another object of one embodiment of the present invention is to provide a high-resolution display device.

[0013] Another object of one embodiment of the present invention is to provide a highly reliable display device.

[0014] Another object of one embodiment of the present invention is to provide a large-area display device.

[0015] Another object of one embodiment of the present invention is to provide a display device that can reduce power consumption. This is one of the topics.

[0016] Another object is to provide a novel display device or the like.

[0017] Another object is to provide a manufacturing method of the display device.

[0018] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0019] One aspect of the present invention is a method for manufacturing a semiconductor device comprising: a first substrate and a second substrate; a first insulating layer is provided on the first surface of the second substrate, a second insulating layer is provided on the first surface of the second substrate, and The first surface of the first substrate and the first surface of the second substrate have the same area. The first surfaces of the plates face each other, and an adhesive layer is provided between the first insulating layer and the second insulating layer; The protective film is in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate. A display device having an area.

[0020] One aspect of the present invention is a method for manufacturing a semiconductor device comprising: a first substrate and a second substrate; a first insulating layer is provided on the first surface of the second substrate, a second insulating layer is provided on the first surface of the second substrate, and The first surface of the first substrate has an area smaller than that of the first surface of the first substrate, and the first surface of the first substrate and the second substrate The first surfaces of the plates face each other, and an adhesive layer is provided between the first insulating layer and the second insulating layer; The protective film is in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate. A display device having an area.

[0021] In addition, a transistor, a capacitance element, and a The display device may include a display element, a light-shielding layer, a colored layer, and spacers.

[0022] The protective film may be made of an oxide, nitride or metal.

[0023] In addition, as a protective film, aluminum oxide, hafnium oxide, zirconium oxide, titanium oxide Zinc oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, silicon oxide silicon, manganese oxide, nickel oxide, erbium oxide, cobalt oxide, tellurium oxide, titanium Barium tannate, titanium nitride, tantalum nitride, aluminum nitride, tungsten nitride, nitrogen Cobalt nitride, silicon nitride, manganese nitride, hafnium nitride, ruthenium, platinum, nickel Iron, cobalt, manganese, or copper can be used.

[0024] The protective film may contain fluorine, carbon, or hydrogen.

[0025] The fluorine concentration in the protective film is 1×10 18 atoms / cm 3 More than 1×10 22 at oms / cm 3 It is desirable that it be less than this.

[0026] The carbon concentration in the protective film is 1×10 17 atoms / cm 3 More than 1×10 22 ato ms / cm 3 It is desirable that it be less than this.

[0027] The hydrogen concentration in the protective film is 1×10 19 atoms / cm 3 More than 1×10 22 ato ms / cm 3 It is desirable that it be less than this.

[0028] The display device may also include a liquid crystal element.

[0029] The display device may also have an organic EL element.

[0030] Furthermore, a configuration using a display device, a microphone, and a speaker is also possible.

[0031] Other aspects of the present invention will be described in the following embodiments and is shown in the drawings. [Effects of the Invention]

[0032] One embodiment of the present invention can provide a display device in which the peripheral circuit portion has high operational stability.

[0033] Alternatively, one embodiment of the present invention can provide a display device with a narrow frame.

[0034] Alternatively, one embodiment of the present invention can provide a lightweight display device.

[0035] Alternatively, one embodiment of the present invention can provide a high-resolution display device.

[0036] Alternatively, according to one embodiment of the present invention, a highly reliable display device can be provided.

[0037] Alternatively, one embodiment of the present invention can provide a large-area display device.

[0038] Another embodiment of the present invention can provide a display device that can reduce power consumption. Cut.

[0039] Alternatively, one embodiment of the present invention can provide a novel display device or the like.

[0040] Alternatively, a method for manufacturing the display device can be provided.

[0041] The description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. , the specification, drawings, claims, etc., and It is possible to extract other effects from the claims and other descriptions. [Brief explanation of the drawings]

[0042] [Figure 1] 1A and 1B are a top view and a cross-sectional view illustrating a display device of one embodiment of the present invention. [Figure 2] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 3] 1A and 1B are cross-sectional views illustrating a manufacturing method of a display device according to one embodiment of the present invention; [Figure 4] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 5] 1A and 1B are a top view and a cross-sectional view illustrating a display device of one embodiment of the present invention. [Figure 6] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 7] 1A to 1C are cross-sectional views illustrating a manufacturing method of a display device according to one embodiment of the present invention. [Figure 8] FIG. 1 is a schematic cross-sectional view for explaining the film formation principle. [Figure 9] 1A and 1B are a cross-sectional view and a top view of a manufacturing apparatus including a chamber for forming the film; [Figure 10] FIG. [Figure 11] 1A and 1B are a top view and a cross-sectional view illustrating a display device of one embodiment of the present invention. [Figure 12] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 13] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 14] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 15] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 16] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 17] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 18] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 19] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 20] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 21] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 22] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 23] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 24] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 25] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 26] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 27] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 28] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 29] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 30] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 31] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 32] 1A and 1B are cross-sectional views illustrating a display device according to one embodiment of the present invention. [Figure 33] 1A and 1B are cross-sectional views illustrating transistors according to embodiments of the present invention. [Figure 34] 1A and 1B are cross-sectional views illustrating transistors according to embodiments of the present invention. [Figure 35] 1A and 1B are a top view and a cross-sectional view illustrating a transistor of one embodiment of the present invention. [Figure 36] 1A and 1B are a top view and a circuit diagram illustrating a display device of one embodiment of the present invention. [Figure 37] FIG. 1 is a top view showing the positional relationship between pixels, transistors, and touch sensor wiring. [Figure 38] FIG. 1 is a top view illustrating an input device of one embodiment of the present invention. [Figure 39] FIG. 1 is a top view illustrating an input device of one embodiment of the present invention. [Figure 40] FIG. 1 is a top view illustrating an input device of one embodiment of the present invention. [Figure 41] FIG. 1 is a top view illustrating an input device of one embodiment of the present invention. [Figure 42] FIG. 1 is a circuit diagram illustrating an input device of one embodiment of the present invention. [Figure 43] FIG. 1 is a circuit diagram illustrating an input device of one embodiment of the present invention. [Figure 44]1A to 1C illustrate a method for forming a CAAC-OS film. [Figure 45] A diagram explaining the InMZnO4 crystal. [Figure 46] 1A to 1C illustrate a method for forming a CAAC-OS film. [Figure 47] 1A to 1C illustrate a method for forming a CAAC-OS film. [Figure 48] A diagram explaining the nc-OS film formation method. [Figure 49] FIG. 10 is a top view of a display module to which a semiconductor device of one embodiment of the present invention is applied. [Figure 50] 1A to 1C illustrate electronic devices according to one embodiment of the present invention. [Figure 51] 1A to 1C illustrate electronic devices according to one embodiment of the present invention. [Figure 52] Ca test measurement results with and without a protective film formed using the ALD method. [Figure 53] 10 shows the results of measuring the voltage holding ratio of a sample using one embodiment of the present invention and a positive liquid crystal. [Figure 54] 10 shows the results of measuring the voltage holding ratio of a sample using one embodiment of the present invention and a negative liquid crystal. [Figure 55] 10 shows a display result of a display device manufactured using one embodiment of the present invention. [Figure 56] Schematic cross-sectional view of a display panel and a schematic cross-sectional view of an SEM observation area. [Figure 57] Cross-sectional SEM photograph of the side of the display panel and EDX mapping analysis results. [Figure 58] Cross-sectional SEM photograph of the side of the display panel and EDX mapping analysis results. [Figure 59] SIMS analysis results of aluminum oxide films formed by ALD or sputtering. [Figure 60] 1A and 1B are top views of a sample for measuring light transmittance and a diagram showing a method for driving a display. [Figure 61] Voltage-light transmittance characteristics in halftones. [Figure 62] Measurement results of light transmittance at various times after storage in a 60°C, 90% humidity environment. [Figure 63] Density evaluation results of aluminum oxide film. [Figure 64] Ca test measurement results with and without a protective film formed using the ALD method. DETAILED DESCRIPTION OF THE INVENTION

[0043] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents of the description. The same reference numerals are used in different drawings to denote the same parts or parts having similar functions. A repeated explanation will be omitted.

[0044] <Notes regarding the description of the drawings> In this specification, the terms "above" and "below" that indicate the positional relationship between components are used. , are used for convenience in explanation with reference to the drawings. The meaning of the wording in the specification changes depending on the direction in which the configuration is depicted. It is not limited to this and can be rephrased appropriately depending on the situation.

[0045] In addition, the terms "above" and "below" refer to the positional relationship of the components directly above or below, and directly adjacent to each other. For example, if the expression is "electrode B on insulating layer A," Electrode B does not need to be formed directly on insulating layer A, but between insulating layer A and electrode B This does not exclude the inclusion of other components.

[0046] In this specification, "parallel" means that two straight lines are arranged at an angle of -10° or more and 10° or less. Therefore, it includes the case of -5° or more and 5° or less. "Line" refers to the state in which two straight lines are arranged at an angle between -30° and 30°. "Perpendicular" means that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it also includes the case where the angle is between 85° and 95°. This refers to a state in which two straight lines are arranged at an angle of 60° or more and 120° or less.

[0047] In addition, in this specification, when the crystal is a trigonal or rhombohedral crystal, it is expressed as a hexagonal crystal system. .

[0048] In addition, in the drawings, the size, thickness of a layer, or area is shown arbitrarily for the convenience of explanation. Therefore, the drawings are not necessarily limited to the scale. The drawings are merely schematic illustrations for the purpose of illustration, and are not limited to the shapes or values ​​shown in the drawings.

[0049] In addition, in the drawings, top views (also called plan views or layout views) and perspective views, In order to clarify the drawings, some components may be omitted.

[0050] In addition, "the same" may mean having the same area or the same shape. Due to the manufacturing process, it is expected that the shapes will not be completely identical. This can be rephrased as being the same.

[0051] <Notes regarding possible paraphrases> In this specification, when describing the connection relationship of a transistor, "the other of the source or drain" (or first electrode, or first terminal), "the other of the source or drain" (or second electrode, The source and drain of a transistor are written as the first terminal and the second terminal. This is because the capacitance varies depending on the structure of the transistor or the operating conditions. The name of the input may be changed depending on the situation, such as source (drain) terminal or source (drain) electrode. It can be rephrased appropriately as needed.

[0052] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring." Furthermore, the terms "electrode" and "wiring" are used interchangeably to refer to the plural "electrodes" and "wirings." This also includes cases where the "line" is formed as a single unit.

[0053] In this specification, a transistor includes a gate, a drain, and a source. It is an element with at least three terminals. And, the drain (drain terminal, drain A channel is formed between the source (source terminal, source region or drain electrode) and the source (source terminal, source region or source electrode). The transistor has a channel region and allows current to flow through the drain, channel region, and source. It is possible.

[0054] Here, the source and drain vary depending on the structure or operating conditions of the transistor. Therefore, it is difficult to determine which is the source and which is the drain. The part that functions as a source and the part that functions as a drain are not called source or drain. One of the source and the drain is referred to as a first electrode, and the other of the source and the drain is referred to as a second electrode. It may be written.

[0055] In this specification, the ordinal numbers "first," "second," and "third" are used to avoid confusion of the elements. It should be noted that the numbers are added to avoid confusion and are not intended to be limiting.

[0056] In this specification, the substrate of the display panel is provided with, for example, an FPC (Flexible Printed Circuit). Switched Circuits) or TCP (Tape Carrier Packet ge) or COG (Chip On Glass) on the board Devices that have ICs (integrated circuits) directly mounted using this method are sometimes called display devices.

[0057] Also, the words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be replaced with "conductive film." ". Alternatively, for example, the term "insulating film" may be used. It may be possible to change the term to "insulating layer."

[0058] <Notes on definitions of terms> The following provides definitions of terms not mentioned in the above embodiments.

[0059] <About connection> In this specification, "A and B are connected" does not mean that A and B are directly connected. In addition to the above, it also includes those that are electrically connected. Connected means that there is an object between A and B that has some electrical effect. , which enables the transmission and reception of electrical signals between A and B.

[0060] These representation methods are merely examples, and the present invention is not limited to these representation methods. , Y, Z1, Z2 are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layer, etc.).

[0061] Note that the content (or even a part of the content) described in one embodiment may be used in conjunction with that embodiment. Other content (or even part of content) described in the context, and / or one or more other embodiments The contents (or a part of the contents) described in the embodiments may be applied, combined, or replaced. You can do things like drawing.

[0062] The contents described in the embodiments are explained in detail in each embodiment using various drawings. This refers to the content that is stated or the content that is stated using the text in the specification.

[0063] In addition, a drawing (or a part thereof) described in one embodiment may be different from another part of the drawing, Another figure (or a part thereof) described in the embodiment, and / or one or more By combining the figures (or a part thereof) described in other embodiments of the present invention, This allows for even more diagrams to be constructed.

[0064] (Embodiment 1) In this embodiment, a configuration example of a display panel will be described.

[0065] <Protection of the Surface and Side Portions of the Substrate by the Protective Film 23> 1A and 1B show a top view and a cross-sectional view of a display device. In FIG. 1A, a display device 10 includes: A display panel 20 having a display area 21 and a peripheral circuit 22, and an FPC 42 are used. In one embodiment of the present invention, the display panel 20 is provided with a protective film 23. The protective film 23 is formed by atomic layer deposition (ALD). It is desirable to form the film by the Micro-Layer Deposition (MLC) method. The protective film such as the protective film 23 can protect, for example, a display element and a transistor. In addition, the protective film such as the protective film 23 has a function of protecting the display element and the transistor. It may have other functions, such as adding one or more ingredients. A protective film such as the protective film 23 may be simply referred to as a film. These may be referred to as the first membrane, second membrane, etc.

[0066] FIG. 1B shows a cross-sectional view of the display panel taken along the dashed line A1-A2, which indicates the edge of the substrate. indicates the edge of the area having the adhesive layer 370, and A4 indicates the edge of the peripheral circuit area. The module is formed with transistors, capacitors, display elements, etc., and has a protective layer at the edge of the substrate. Substrate 100 covered with film 23, substrate 300, insulating layer 130, insulating layer 131, insulating layer 170 , insulating layer 180, insulating layer 181, insulating layer 182, light-shielding layer 18, insulating layer 330, spacer 2 1B, the substrate 100 and the substrate 370 are provided. 300 can overlap and have approximately the same area. This improves the controllability of alignment during lamination.

[0067] The thickness of the protective film 23 is 3 nm or more and 200 nm or less, and more preferably 5 nm or more and 15 nm or less. It is desirable to make the thickness less than 0 nm. This improves the barrier properties and prevents the film from penetrating into the display panel. This can prevent the infiltration of atmospheric components.

[0068] Alternatively, the hydrogen concentration contained in the protective film 23 is 1×10 19 atoms / cm 3 1x or more 10 22 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 1x or more 10 21 atoms / cm 3 It is desirable that the protective film 23 has a large amount of hydrogen. In this case, hydrogen may penetrate from the protective film 23 to the display panel side, deteriorating the characteristics of the peripheral circuits. Therefore, by having the above-mentioned concentration as the hydrogen concentration in the protective film, high purity The protective film 23 can be provided to prevent hydrogen from penetrating from the protective film to the display panel side, and the peripheral circuit This can improve the operational stability and reliability of the road.

[0069] Alternatively, the carbon concentration contained in the protective film 23 is 1×10 17 atoms / cm 3 1x or more 10 22 atoms / cm 3 Less than 1 x 10 17 atoms / cm 3 1x or more 10 21 atoms / cm 3 less than 1×10 17 atoms / cm 3 Below top 1×10 20 atoms / cm 3 The carbon concentration in the protective film 23 is preferably less than By having the above concentration, the protective film can be made denser and the barrier properties can be further improved. can be increased to.

[0070] Alternatively, the fluorine concentration contained in the protective film 23 is 1×10 18 atoms / cm 3 1 more x10 22 atoms / cm 3 Less than 1 x 10 18atoms / cm 3 1 more x10 21 atoms / cm 3 It is desirable that the fluorine concentration in the protective film 23 is less than 1000 ppm. By having the above concentration, the protective film can be made denser, and the barrier properties can be further improved. It can be increased.

[0071] <Method for forming protective film 23 on display panel by ALD method> Using Figures 3(A), 3(B), and 3(C), we will explain how to fabricate a protective film on a display panel using the ALD method. The film formation method of 23 will be explained.

[0072] A region 11 is formed by providing a transistor, a capacitor element, a part of a display element, etc. on a substrate 100. In addition, a light-shielding layer, a colored layer, an insulating layer, a part of the display element, etc. are provided on the substrate 300, and the region 12 (See FIG. 3(A)).

[0073] Next, the region 11 of the substrate 100 and the region 12 of the substrate 300 are placed face to face, and the adhesive layer 370 is The display panel 20 can be formed by bonding the substrate 100 and the substrate 300 together using the adhesive. (See Figure 3(B)).

[0074] The temperature at which the protective film 23 is formed by the ALD method is room temperature or higher and lower than 200°C, preferably 5 It can be greater than or equal to 0 degrees and less than 150 degrees.

[0075] The ALD method can deposit a film extremely uniformly on the surface to be deposited. For example, aluminum oxide, hafnium oxide, zirconium oxide, titanium oxide, Zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), tantalum oxide, Silicon oxide, manganese oxide, nickel oxide, erbium oxide, cobalt oxide, terbium oxide barium titanate, titanium nitride, tantalum nitride, aluminum nitride, tungsten nitride The protective film is made of silicon nitride, cobalt nitride, silicon nitride, manganese nitride, hafnium nitride, etc. In addition, the protective film is not limited to an insulating film, and a conductive film may also be formed. For example, ruthenium, platinum, nickel, cobalt, manganese, copper, etc. can be deposited. It is possible.

[0076] In addition, the protective film 23 is not formed on the portion electrically connected to the FPC 42, etc. As a masking method, it is desirable to use an organic film, an inorganic film, For example, silicon oxide, silicon oxynitride, gallium oxide, etc. can be used. gallium oxide nitride, yttrium oxide, yttrium oxide nitride, hafnium oxide, Oxide insulating films such as hafnium oxide nitride, and nitride insulating films such as silicon nitride and aluminum nitride Film, photoresist, polyimide resin, acrylic resin, polyimide amide resin, benzosilane Organic materials such as clobutene resin, polyamide resin, and epoxy resin can be used. When these films are used as a mask, the protective film 23 can be removed after the film is formed.

[0077] Alternatively, the area where the film is to be formed by the ALD method may be masked with a metal mask. Lumasque is a material containing iron, chromium, nickel, cobalt, tungsten, molybdenum, aluminum, a metal element selected from aluminum, copper, tantalum, titanium, or a material containing the above-mentioned metal element as a component The metal may be formed by using an alloy of the above metal elements or an alloy combining the above metal elements. The mask may be placed close to or in contact with the display panel.

[0078] Furthermore, by using the ALD method, a dense film can be formed. By forming a protective film 23 on the surface by the ALD method, the penetration of external components such as moisture is suppressed. As a result, it is possible to suppress fluctuations in transistor characteristics and improve the This allows for stable operation. In addition, narrowing the frame allows for an expansion of the pixel area, Furthermore, the display device can be made higher definition.

[0079] Furthermore, by providing the protective film 23, the distance A1-A4 between the end of the peripheral circuit 22 and the end of the substrate Even if the gap is narrowed, the barrier property is high, so the transistor characteristics are stable, i.e., the operation of the peripheral circuit Therefore, the presence of the protective film 23 makes it possible to narrow the frame of the display panel. For example, the distance from the end of the peripheral circuit 22 to the end of the substrate (the cut portion for panel processing) can be The distance A1-A4 can be set to 300 μm or less, preferably 200 μm or less. The structure at the end portion can also be made smooth as shown in FIG. 1(C).

[0080] By forming the protective film 23 on the insulating layer, the metal components in the protective film 23 are absorbed into the insulating layer. For example, when forming the protective film 23 on the insulating layer 330, When the insulating layer is formed by heating and is made of organic resin, the resin softens and the protective film 23 The metal component in the insulating layer can also be diffused into the insulating layer.

[0081] Also, a resin film may be provided on the outside of the protective film 23. This allows various stresses to be borne. This prevents the insulation layer from breaking down due to stress concentration. A highly reliable display device can be provided.

[0082] <Another example of the display panel periphery configuration 1> 2(A) and 2(B) show another example of the configuration of FIG. 1(B). In this case, the protective film 23 is placed on the back as shown in FIG. It can be slightly wrapped around to the front side, or it can be wrapped around to the back side (area 14) as shown in Figure 2(B). This also makes it possible to suppress the formation of the protective film 23.

[0083] <Another example of the display panel periphery configuration 2> 4(A) and 4(B) show another example of the configuration of FIG. 1(B). By using the protective film 23, This can prevent moisture from penetrating and reduce the number of insulating layers. 4(B) does not have the insulating layer 182 used in FIGS. 1(B) and 1(C). It is possible.

[0084] <Another example of the display panel periphery configuration 3> FIG. 5(A) shows a configuration example different from those shown in FIGS. 4(A) and 4(B). 5(B) is a top view of the module 20 as seen from the substrate 300 side, and FIG. 5(B) is a cross-sectional view taken along the dashed line A1-A2. In Fig. 5(A), each layer is omitted for clarity. In the example of the configuration shown in (B), an insulating layer 182 is added to the structure of FIG. 1(B) in the same manner as in FIG. 4(A). 5(A) and 5(B), the top of the substrate 100 may be configured as a structure that does not have the The area of ​​the upper surface of the substrate 300 can be made smaller than the area of ​​the surface. As shown in FIG. 5(A), when the peripheral portion of the substrate 100 is viewed from the front side (substrate 300 side), The adhesive layer 370 is exposed, and the side surface of the adhesive layer 370 is also inclined, so that the protective film 23 is more It can be formed uniformly.

[0085] As a configuration example different from that shown in FIG. 5(A), as shown in FIG. 5(C), The substrate 300 has a smaller area than the substrate 100, and the substrate 300 has no unevenness. 5(D), a protective film 2 may be formed on the substrate 100 side and the substrate 300 side. 3 may be hardly formed.

[0086] <Another example of the display panel periphery configuration 4> Figures 6(A), 6(B), 6(C), 6(D), and 6(E) show different patterns from Figure 1(B). The protective film 23 can prevent moisture from entering the insulating layer. The number of can be further reduced. Figure 6(A), Figure 6(B), Figure 6(C), Figure 6(D), In the configuration example shown in FIG. 6(E), the insulating layer used in the configuration examples shown in FIGS. 1(B) and 1(C) is The structure of the peripheral portion can be such that it does not have the insulating layer 181 and the insulating layer 182. As shown in FIG. 6(B), the surface may have irregularities, or may have almost no irregularities. As shown in Fig. 6(B) and Fig. 6(C), a structure without a spacer 240 may be used. As shown in FIG. 6(D), the substrate 100 side and the substrate 300 side may have a structure in which the The protective film 23 may not be provided in the region 14, or the protective film 23 may be provided in the region 14 as shown in FIG. It may have a structure that does not have this.

[0087] Note that one embodiment of the present invention has been described in this embodiment. However, the present invention is not limited to these. That is, in this and other embodiments, various aspects of the invention are described. Therefore, one embodiment of the present invention is not limited to a specific embodiment. Although an example of film formation using the ALD method has been shown, one embodiment of the present invention is not limited to this. In some cases or depending on the situation, various film formation methods according to an embodiment of the present invention may be used. For example, in some cases or depending on the circumstances, one of the methods of the present invention may be used to form a film. In some embodiments, the method may be a CVD method, a plasma CVD method, an MOCVD method, a PVD method, a sputtering method, or a vapor deposition method. At least one method such as a spin coating method, an ink jet method, a printing method, or a coating method Alternatively, for example, in some cases or depending on the circumstances, In one embodiment of the present invention, the film may be formed without using the ALD method.

[0088] Note that the structures and methods described in this embodiment may be different from the structures and methods described in other embodiments. can be used in appropriate combination.

[0089] (Embodiment 2) In this embodiment, a plurality of display panels each having the protective film 23 described in the first embodiment are manufactured. This article explains how to do this.

[0090] 7(A), 7(B), 7(C), and 7(D) show a method for manufacturing the display panel 20. FIG. FIG. 7 is a schematic diagram showing a liquid crystal element 80 and an adhesive layer 370 as display elements. The panel includes an element substrate having transistors, capacitor elements, etc. on a substrate 100, and a substrate 30 The opposing substrate, which has a light-shielding layer, a colored layer, etc., on the liquid crystal display panel, is bonded in a manner that seals the liquid crystal. Note that the same parts as those in the manufacturing method shown in FIG. 3 will be omitted.

[0091] In a configuration having a plurality of display panels 20 (see FIG. 7A), the substrate 300 (upper surface side) By cutting, the grooves 30 can be formed (see FIG. 7(B)). Forming the grooves 30 After that, a protective film 23 is formed from the upper side by the ALD method (see FIG. 7(C)), and finally, the substrate 10 By cutting the O side, a plurality of display panels can be manufactured (see FIG. 7(D)). In this case, the formation of the protective film 23 on the rear surface can be suppressed.

[0092] After cutting, a protective film may be formed again using the ALD method.

[0093] In FIG. 7(D), when the substrate 100 is divided, the substrate edge or the vicinity of the substrate edge is cut. Damaged areas with tiny cracks (also called microcracks) may form in the film. Specifically, a marking (also called a scribe) is made and stress is concentrated on the marking. In addition, microcracks may form at the edges of the broken glass. In such a case, if a protective film is formed using the ALD method, the protective film may not be able to penetrate the damaged area. The film is formed even inside the cracks, so the damaged area can be covered. This can prevent the substrate or film from becoming brittle or cracking in the subsequent manufacturing steps.

[0094] Note that the structures and methods described in this embodiment may be different from the structures and methods described in other embodiments. can be used in appropriate combination.

[0095] (Embodiment 3) <<Explanation about the film formation method>> The following describes a method for forming a semiconductor layer, an insulating layer, a conductive layer, or the like that can be applied to one embodiment of the present invention. A film forming apparatus will be described.

[0096] <CVD and ALD film deposition> Conventional CVD deposition equipment requires a precursor gas for the reaction during deposition. One or more of the above are simultaneously supplied to the chamber. Precursors for the reaction are introduced into the chamber in sequence, and the gas introduction sequence is repeated. For example, by switching each switching valve (also called high-speed valve), Two or more precursors are supplied to the chamber in sequence by switching between them, and multiple precursors are mixed. To avoid this, an inert gas (such as argon or nitrogen) is added after the first precursor. In addition, instead of introducing an inert gas, a vacuum pump is used. Thus, after the first precursor is evacuated, the second precursor can be introduced.

[0097] Figures 8(A), 8(B), 8(C), and 8(D) show the film formation process using the ALD method. The precursor 601 is adsorbed onto the surface of the substrate (see FIG. 8(A)) and a first monolayer is formed. (See FIG. 8(B)). At this time, metal atoms contained in the precursor are present on the substrate surface. The metal atom can bond with the hydroxyl group. The second precursor introduced after the first precursor 601 is evacuated may be 8C), a second monolayer is deposited on the first monolayer to form a thin film. A film is formed (see Figure 8(D)). For example, if the second precursor contains an oxidizing agent, In this case, the metal atom or alkyl group bonded to the metal atom present in the first precursor A chemical reaction occurs between the oxidizing agent and the oxide film.

[0098] In addition, the ALD method is a film formation method based on surface chemical reactions, and the precursor is absorbed onto the surface to be filmed. The self-limiting mechanism acts on the surface of the film, forming a layer. For example, trimethylaluminum The precursor reacts with the hydroxyl group (OH group) present on the surface of the target film. Since only a surface reaction occurs due to heat, the precursor comes into contact with the surface to be coated and transfers thermal energy. Using this gas, metal atoms in the precursor can be adsorbed onto the surface of the film to be formed. The precursor has a high vapor pressure, is thermally stable before film formation, and does not self-decompose. It has the characteristics of rapid chemical adsorption to the substrate. In addition, the precursor is introduced as a gas. Therefore, the first precursor and the second precursor, which are introduced alternately, have enough time to diffuse. If this is possible, it will be possible to form a film with good coverage even in areas with high aspect ratio unevenness. It is possible.

[0099] In addition, in the ALD method, the gas introduction order is controlled and repeated multiple times until the desired thickness is achieved. By repeating this process, a thin film with excellent step coverage can be formed. The number of times can be adjusted, so precise film thickness adjustment is possible. By increasing the temperature, the film formation speed can be increased and the impurity concentration in the film can be reduced. can.

[0100] There are two types of ALD methods: ALD using heat (thermal ALD) and ALD using plasma (plasma ALD). In thermal ALD, the precursor reacts using thermal energy. In the plasma ALD method, the precursor reacts in a radical state.

[0101] The ALD method can deposit extremely thin films with high precision. Surface coating is possible even on uneven surfaces. High rate and high film density.

[0102] In addition, the thermal ALD method is free from plasma damage, which can suppress the occurrence of defects in the film. This can be done.

[0103] Plasma ALD In addition, by forming a film using the plasma ALD method, it is possible to achieve a high degree of uniformity compared to the ALD method using heat (thermal ALD method). The plasma ALD method allows deposition at temperatures even lower than 100 degrees. The film can be formed without decreasing the film formation rate. Since the plasma can generate radicals, it is possible to form films of not only oxides but also nitrides. can be done.

[0104] In addition, the plasma ALD method can enhance the oxidizing power of the oxidizing agent. When performing the process, the precursor remaining in the film or the organic components desorbed from the precursor are reduced. It is also possible to reduce carbon, chlorine, hydrogen, etc. in the film, and the impurity concentration It is possible to have a film with a low

[0105] In addition, when a light-emitting element (such as an organic EL element) is used as a display element, if the process temperature is high, However, by using the plasma ALD method, Since the process temperature can be lowered, deterioration of the light emitting element can be suppressed.

[0106] In addition, when performing plasma ALD, inductively coupled plasma (ICP) is used to generate radical species. This uses a selectively coupled plasma. It can be generated at a distance from the substrate, and the protective film can be applied to the substrate or the film on which the protective film is formed. It can reduce plasma damage.

[0107] As a result of the above, by using the plasma ALD method, the process temperature can be lowered compared to other film formation methods. The surface coverage can be increased, and the side surface of the substrate can be This film can be formed, which can prevent water from entering from the outside. Therefore, the reliability of the driver operation of the peripheral circuits at the edge of the panel is improved (transistor This improves the reliability of the display characteristics, enabling stable operation even with a narrow frame. do.

[0108] <<Explanation about ALD equipment>> An example of a film formation apparatus using the ALD method is shown in FIG. a film forming chamber (chamber 1701), a raw material supply unit 1711a, a raw material supply unit 1711b, High-speed valves 1712a and 1712b, which are flow rate controllers, and a raw material inlet 1713 a, a raw material inlet 1713b, a raw material outlet 1714, and an exhaust device 1715. The raw material inlet 1713a and raw material inlet 1713b installed in the member 1701 are connected to a supply pipe and It is connected to the raw material supply unit 1711a and the raw material supply unit 1711b via valves. The raw material outlet 1714 is connected to an exhaust device 1715 via a discharge pipe, a valve, and a pressure regulator. It has been done.

[0109] Inside the chamber, there is a substrate holder 1716 equipped with a heater, and the substrate to be formed is placed on the substrate holder. A substrate 1700 is placed on which the film is to be deposited.

[0110] In the raw material supply units 1711a and 1711b, solid A precursor is formed from a solid raw material or a liquid raw material. Supply unit 1711b may be configured to supply a gas precursor.

[0111] In addition, although an example in which two raw material supply units 1711a and 1711b are provided is shown, There is no particular limitation, and three or more valves may be provided. 12b can be precisely controlled in time and can supply either a precursor or an inert gas. The high-speed valve 1712a and the high-speed valve 1712b are configured to supply the precursor. It can also be said to be a flow rate controller for an inert gas.

[0112] In the film forming apparatus shown in FIG. 9(A), a substrate 1700 is carried onto a substrate holder 1716. After the bar 1701 is sealed, the substrate 1700 is heated by the heater of the substrate holder 1716. is set to a desired temperature (for example, 100°C or higher or 150°C or higher), and a precursor is supplied; Exhaust by the exhaust device 1715, supply of inert gas, and exhaust by the exhaust device 1715 By repeating this process, a thin film is formed on the substrate surface.

[0113] In the film forming apparatus shown in FIG. 9(A), the raw material supply units 1711a and 1711b are provided with By appropriately selecting the raw materials (volatile organometallic compounds, etc.), hafnium, aluminum, Oxides containing one or more elements selected from the group consisting of sulphur, tantalum, zirconium, etc. (complex oxides) Specifically, an insulating layer containing hafnium oxide can be formed. an insulating layer including aluminum oxide; and hafnium silicate. or an insulating layer comprising aluminum silicate. In addition, the raw materials provided in the raw material supply units 1711a and 1711b can be By appropriately selecting the material (volatile organometallic compound, etc.), it is possible to form a tungsten layer, a titanium layer, It is also possible to form thin films such as metal layers or nitride layers such as titanium nitride layers.

[0114] For example, when a hafnium oxide layer is formed using a film forming apparatus that uses the ALD method, a solvent and liquids containing hafnium precursor compounds (hafnium alkoxides, tetrakisdimethyl A vaporized precursor of hafnium amide (such as TDMAH) and Two types of gases are used: oxidant and ozone (O3). The first precursor supplied from the raw material supply unit 1711b is TDMAH. The second precursor is ozone. The chemical formula of tetrakisdimethylamidohafnium is The material is Hf[N(CH3)2]4. Other materials include tetrakis(ethylmethyl) Nitrogen has the function of eliminating charge trapping levels. Therefore, by including nitrogen in the precursor, hafnium oxide with a low charge trapping level density can be obtained. A film can be formed.

[0115] When forming an aluminum oxide layer using a film forming device that uses the ALD method, the solvent and aluminum The precursor is a vaporized liquid containing a tungsten precursor compound (e.g., TMA), and the oxidant is a In this case, two kinds of gases, 1) H2O and 2) HCl, are used. The precursor is TMA, and the second precursor supplied from the raw material supply unit 1711b is H2 O. The chemical formula of trimethylaluminum is Al(CH3)3. The material liquid is tris(dimethylamido)aluminum, triisobutylaluminum Aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate) ) etc.

[0116] <<Multi-chamber manufacturing equipment>> Also, a multi-chamber manufacturing apparatus having at least one film forming apparatus shown in FIG. An example is shown in FIG. 9(B).

[0117] The manufacturing equipment shown in FIG. 9(B) can continuously form laminated films without exposing them to the atmosphere. We aim to prevent impurities from being mixed in and improve throughput.

[0118] The manufacturing apparatus shown in FIG. 9(B) includes a load chamber 1702, a transfer chamber 1720, a processing chamber 1703, and a forming chamber 1704. It has at least a chamber 1701 which is a membrane chamber and an unloading chamber 1706. The chambers of the equipment (including the load chamber, processing chamber, transfer chamber, film deposition chamber, unload chamber, etc.) are: To prevent moisture from adhering, the container is filled with an inert gas (such as nitrogen gas) with a controlled dew point. It is preferable to reduce the pressure, and it is desirable to maintain the reduced pressure.

[0119] In addition, chambers 1704 and 1705 use the same ALD method as chamber 1701. It may be a film forming apparatus, a film forming apparatus using a plasma CVD method, or a sputtering apparatus. The deposition apparatus may be a deposition apparatus using a deposition method, or a metal organic chemical vapor deposition (MOCVD) method. Organic Chemical Vapor Deposition (OCCVD) method The film forming apparatus may be used.

[0120] For example, the chamber 1704 is a film forming device that uses a plasma CVD method. The following is an example of a film deposition system using the MOCVD method as the 1705. show.

[0121] In FIG. 9B, the top view of the transfer chamber 1720 is shown as an example of a hexagonal shape, but it may be changed depending on the number of layers of the laminated film. If necessary, a manufacturing device having a polygonal shape or more and connected to more chambers may be used. In addition, although the top surface shape of the substrate is shown as a rectangle in FIG. 9(B), it is not particularly limited. Although FIG. 9(B) shows an example of a single-substrate type, a batch type in which films are formed on multiple substrates at once is also possible. The film forming apparatus may be the above.

[0122] 《Large area ALD film deposition equipment》 Furthermore, by using the plasma ALD method, it is possible to form films on large-area substrates. 1(A) and 1(B) show schematic diagrams of other configurations of the ALD film formation equipment. The casing is introduced into the chamber 820 through the inlet 810 and then passed through the plasma source 830. This allows film formation on the substrate 800 by the ALD method from above and below. The source 830 may be located inside or outside the chamber. As a film formation method, it is also possible to fix the substrate in a chamber and form the film as shown in Figure 10(A). As shown in Figure 10(B), the film can be formed while the substrate is being transported in an in-line system. By using the plasma ALD method, it is possible to form films over large areas with high throughput.

[0123] In order to form a uniform film on the side surface of the display panel, the display panel is provided with a susceptor or the like. Alternatively, the substrate 100 of the display panel and the jig of the cassette may be brought into point contact or line contact. Alternatively, they may be brought into surface contact.

[0124] Note that the structures and methods described in this embodiment may be different from the structures and methods described in other embodiments. can be used in appropriate combination.

[0125] (Fourth embodiment) In this embodiment, the details of the display devices described in the first and second embodiments will be explained with reference to the drawings. explain.

[0126] 11A and 11B are an example of a top view and a cross-sectional view of a display device. 1(A) includes a display panel 20, a display area 21, a peripheral circuit 22, and an FPC 42. A representative configuration is shown.

[0127] In Fig. 11(B), the dashed lines A-A', B-B', C-C', and DD in Fig. 11(A) are shown. The section A-A' shows the peripheral part of the display device, and the section B-B' shows the peripheral circuit part. The area between CC' indicates the display area, and the area between DD' indicates the connection with the FPC.

[0128] Transistors 50 and 52 The transistor 50 includes a conductive layer 120, an insulating layer 130, an insulating layer 131, a semiconductor layer 140, and a conductive layer 141. The conductive layer 150, the conductive layer 160, and the insulating layer 170 can be configured. The transistor 52 can be configured in a similar manner. An edge layer 181 or an insulating layer 182 may be added.

[0129] <Dual gate structure> The transistor 50 may be replaced with a modified transistor 55. 5. The transistor 55 shown in FIG. 35 has a dual gate structure. It is characterized by:

[0130] 35A, 35B, and 35C are a top view and a cross-sectional view of the transistor 55. 35(A) is a top view of the transistor 55, and FIG. 35(B) is a top view of the transistor 55. 35(A) is a cross-sectional view taken along the dashed line X-X' in FIG. 35(C). 35(A) is a cross-sectional view of the substrate 100 and the insulating layer 11 for clarity. 0, insulating layer 130, insulating layer 170, insulating layer 180, etc. are omitted.

[0131] The transistor 55 shown in FIGS. 35(A) to 35(C) has the same structure as the transistor 50. In addition, the conductive layer 120 includes the insulating layer 130, the insulating layer 170, and the insulating layer 1 The opening 530 of the insulating film 80 may be connected to the conductive layer 520 .

[0132] Conductive layer 520 The conductive layer 520 is a conductive film that is transparent to visible light or a conductive film that is reflective to visible light. As the conductive film that is transparent to visible light, the following conductive film can be used. The same material as the conductive layer 190 can be used, for example, indium (In), zinc (Z), It is recommended to use a material containing one of the following: tin (Sn) and tin (N). A light-transmitting conductive film is typically formed using indium tin oxide or tungsten oxide. Indium oxide containing tungsten oxide, indium zinc oxide containing titanium oxide Indium oxide containing titanium oxide, indium tin oxide, indium zinc oxide, Conductive oxides such as indium tin oxide containing silicon dioxide can be used.

[0133] Alternatively, the conductive layer 520 may be a conductive film that is reflective to visible light, such as a conductive layer described later. The same materials as those in 220 can be used.

[0134] As shown in FIG. 35(C), the side surface of the semiconductor layer 140 and the conductive layer 142 are in contact with each other in the channel width direction. The insulating layer 170 and the insulating layer 520 face each other in the semiconductor layer 140. Since carriers flow not only at the interface of the semiconductor layer 140 but also inside the semiconductor layer 140, Therefore, the amount of carrier movement in the transistor 55 increases. The on-current of the conductive layer 520 increases and the field effect mobility also increases. affects the side surface of the semiconductor layer 140 or the edge portion including the side surface and its vicinity. This can suppress the occurrence of parasitic channels at the sides or ends of 140.

[0135] In addition, the transistor shown in FIG. 35 can be used in a large-sized display device or a high-definition display device by being provided in a pixel portion. Even if the number of wires increases in a display device, it is possible to reduce the signal delay in each wire. This makes it possible to suppress display defects such as display unevenness.

[0136] The transistors 52 in the peripheral circuits (such as gate drivers) all have the same structure. The pixel section may have two or more transistors. The rotors 50 may all have the same structure, or may have two or more different structures.

[0137] Alternatively, the transistor described in this embodiment may be a transistor including an oxide semiconductor. However, one embodiment of the present invention is not limited to this. Alternatively, depending on the situation, one embodiment of the present invention may be a semiconductor device using a semiconductor material other than an oxide semiconductor. A transistor may also be used.

[0138] <Reflective LCD panel> As a display panel to be mounted on the display device, a reflective liquid crystal panel as shown in FIG. 11(B) is used. The display device 10 shown in FIG. 11(B) uses liquid crystal elements as display elements. The display device 10 includes a polarizing plate 103, a polarizing plate 303, a protective group Plate 105, protective substrate 302, adhesive layer 373, adhesive layer 374, adhesive layer 375, and adhesive layer 3 76. In order to realize a reflective liquid crystal panel, some or all of the pixel electrodes It is sufficient if the electrode functions as a reflective electrode (as will be described later). In this case, it is possible to provide a memory circuit such as an SRAM under the reflective electrode. , and power consumption can be further reduced.

[0139] Other examples of LCD panels include transmissive (described below), semi-transmissive, direct-view, and projection types. You can also be there.

[0140] <<Substrate 100>> There is no particular restriction on the material of the substrate 100, but it should be strong enough to withstand the subsequent heat treatment. The substrate 100 must be heat resistant, and it is desirable that the substrate 100 has high light transmittance.

[0141] The substrate 100 may be made of an organic material, an inorganic material, or a composite material such as an organic material and an inorganic material. For example, inorganic materials such as glass, ceramics, and metals can be used for the substrate 100. can be done.

[0142] Specifically, alkali-free glass, soda-lime glass, potash glass, or crystal glass The substrate 100 may be made of an inorganic oxide film, an inorganic nitride film, or an inorganic oxynitride film. A film or the like can be used for the substrate 100. For example, silicon oxide, silicon nitride, oxide, Silicon nitride, alumina, etc. can be used for the substrate 100. Stainless steel or Alternatively, aluminum or the like can be used for the substrate 100 .

[0143] Additionally, a single layer material or a multi-layer laminated material can be used for the substrate 100. For example, a material that is laminated with a base material and an insulating film that prevents the diffusion of impurities contained in the base material is called a substrate. Specifically, it can be used to prevent the diffusion of glass and impurities contained in the glass. One or more layers selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, etc. A material in which several films are laminated can be applied to the substrate 100. Alternatively, a material made of a resin and an impermeable material that can penetrate the resin can be applied. A silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like is laminated to prevent the diffusion of impurities. The resulting material can be applied to the substrate 100 .

[0144] The substrates applicable to the substrate 100 described above can also be applied to the substrate 300.

[0145] Insulating layer 110 The insulating layer 110 having a function as a base film may be made of silicon oxide, silicon oxynitride, Silicon nitride, silicon oxide nitride, gallium oxide, hafnium oxide, yttrium oxide, The insulating layer 110 is formed using aluminum oxide, aluminum oxynitride, or the like. Silicon nitride, gallium oxide, hafnium oxide, yttrium oxide, aluminum oxide By using ammonium or the like, impurities, typically alkali metals, water, hydrogen, etc., can be removed from the substrate 100. The insulating layer 110 is formed on the substrate 100. Furthermore, the insulating layer 110 does not necessarily have to be formed.

[0146] Conductive layer 120 The conductive layer 120 having the function of a gate electrode is made of aluminum, chromium, copper, or tantalum. , a metal element selected from titanium, molybdenum, nickel, iron, cobalt, and tungsten; Alternatively, an alloy containing the above-mentioned metal elements or an alloy combining the above-mentioned metal elements may be used. It is formed using one or more selected from manganese and zirconium. The conductive layer 120 may be formed using a single layer structure or a multi-layer structure. For example, a single layer structure of an aluminum film containing silicon, a manganese film, a single-layer structure of a copper film containing the titanium nitride film; a two-layer structure of a titanium film laminated on an aluminum film; Two-layer structure with a titanium film laminated on top, and two-layer structure with a tungsten film laminated on a titanium nitride film , a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, Two-layer structure: copper film on copper film containing fluorine, titanium film on titanium film, and aluminum film on titanium film. A three-layer structure is formed by laminating a copper film and then forming a titanium film on top of that, and then forming a manganese-containing copper film on top of that. There is also a three-layer structure in which a copper film is laminated and a manganese-containing copper film is formed on top of that. Aluminum, titanium, tantalum, tungsten, molybdenum, chromium, neodymium, steel Using an alloy film or a nitride film made up of one or more selected from candium Good too.

[0147] Insulating layer 130 The insulating layer 130 also functions as a gate insulating film. , aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride, silicon nitride oxide Silicon, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, silicon dioxide One or more of: lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide The insulating layer 130 may contain lanthanum (La), nitrogen, di The insulating layer 130 may contain impurities such as zinc (Zr). For example, silicon oxynitride can be used.

[0148] Insulating layer 131 The gate insulating film can be formed by laminating an insulating layer 130 and an insulating layer 131 . The insulating layer 131 can be made of the same material as the insulating layer 130. For example, silicon nitride can be used for the insulating layer 131. The intrusion of hydrogen, water, etc. into the semiconductor layer 140 can be prevented.

[0149] Semiconductor layer 140 The semiconductor layer 140 is formed of a metal oxide containing at least In or Zn. The area of ​​the upper surface of layer 140 is preferably equal to or smaller than the area of ​​the upper surface of conductive layer 120. It's nice.

[0150] Oxide semiconductors The oxide semiconductor used as the semiconductor layer 140 is, for example, an In—Ga—Zn-based oxide. In-Al-Zn oxides, In-Sn-Zn oxides, In-Hf-Zn oxides , In-La-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide, In-Nd-Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide, I n-Gd-Zn oxide, In-Tb-Zn oxide, In-Dy-Zn oxide, In -Ho-Zn oxide, In-Er-Zn oxide, In-Tm-Zn oxide, In- Yb-Zn oxide, In-Lu-Zn ​​oxide, In-Sn-Ga-Zn oxide, I n-Hf-Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-Al- Zn-based oxides, In-Sn-Hf-Zn-based oxides, In-Hf-Al-Zn-based oxides, I An n-Ga-based oxide can be used.

[0151] Here, the In-Ga-Zn oxide is a material containing In, Ga, and Zn as main components. It means oxide, and the ratio of In, Ga, and Zn does not matter. Other metal elements may also be included.

[0152] When the semiconductor layer 140 is formed of an In-M-Zn oxide, the sum of In and M is 1 When the atomic percentage of In is 0.00, the atomic percentage of M is preferably 25. atomic %, and M is less than 75 atomic %, and more preferably In is 34a atomic% and M is less than 66 atomic%.

[0153] The semiconductor layer 140 has an energy gap of 2 eV or more, preferably 2.5 eV or more, Preferably, the energy gap is 3 eV or more. By doing so, the off-state current of the transistor 50 can be reduced.

[0154] The thickness of the semiconductor layer 140 is 3 nm or more and 200 nm or less, preferably 3 nm or more and 100 nm or less. It is more preferable to set the thickness to 3 nm or more and 50 nm or less.

[0155] The semiconductor layer 140 is an In-M-Zn oxide (wherein M is Al, Ga, Y, Zr, La, Ce, or Ti , Ge, or Nd) to form In-M-Zn oxide. The atomic ratio of the metal elements in the sputtering target to be used may be a natural number, or M may be a natural number. For example, the atomic ratio of the metal elements in the target is In:M:Zn=1. :1:1, In:M:Zn=1:1:1.2, In:M:Zn=1:1:1.5, In: M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4.1 The atomic ratio of the metal elements in the semiconductor layer 140 to be formed is preferably The error is the ratio of the number of atoms of the metal elements contained in the sputtering target. Including a minus 40% variation. In addition, targets containing In-Ga-Zn oxide, preferably By using a polycrystalline target containing In-Ga-Zn oxide, the CAAC -OS(C Axis Aligned Crystalline Oxide Sem A semiconductor film and a microcrystalline oxide semiconductor film can be formed.

[0156] The hydrogen contained in the semiconductor layer 140 reacts with the oxygen that bonds with the metal atoms to form water, and Oxygen vacancies are formed in the lattice from which oxygen has been desorbed (or in the portion from which oxygen has been desorbed). When hydrogen enters the electron carrier, it can generate electrons. By bonding with oxygen, which bonds with metal atoms, electrons, which act as carriers, may be generated. Therefore, a transistor using an oxide semiconductor containing hydrogen has normally-on characteristics. It's easy to become.

[0157] For this reason, it is preferable that the semiconductor layer 140 has as little oxygen vacancy as possible and as little hydrogen as possible. Specifically, the semiconductor layer 140 is preferably subjected to secondary ion mass spectroscopy (SIMS). Hydrogen concentration obtained by Condary Ion Mass Spectrometry degrees, 5 x 10 19atoms / cm 3 Less than 1×10, more preferably 19 atoms / cm 3 Less than or equal to 5 × 10 18 atoms / cm 3 Less than or equal to 1× 10 18 atoms / cm 3 Less than or equal to 5 × 10 17 atoms / cm 3 below , and more preferably 1 × 10 16 atoms / cm 3 As a result, the transistor The transistor 50 has an electrical characteristic in which the threshold voltage is positive (also called a normally-off characteristic). do.

[0158] In addition, when the semiconductor layer 140 contains silicon or carbon, which is one of the group 14 elements, As a result, oxygen vacancies increase in the semiconductor layer 140, causing the semiconductor layer 140 to become n-type. The concentrations of silicon and carbon at 40 (obtained by secondary ion mass spectrometry) were x10 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 and As a result, the transistor 50 has electrical characteristics in which the threshold voltage is positive (normal It has a turn-off characteristic.

[0159] In addition, in the semiconductor layer 140, alkali metal or is the concentration of alkaline earth metals, 1×10 18 atoms / cm 3 Below, preferably 2 x 1 0 16 atoms / cm 3 Alkali metals and alkaline earth metals are oxide semiconductors. When they bond with a conductor, carriers may be generated, increasing the off-state current of the transistor. Therefore, the concentration of the alkali metal or alkaline earth metal in the semiconductor layer 140 As a result, transistor 50 has a positive threshold voltage. The device has electrical characteristics (also called normally-off characteristics).

[0160] Furthermore, when the semiconductor layer 140 contains nitrogen, electrons that act as carriers are generated, and the carrier density increases. As a result, the transistor tends to have normally-on characteristics. Therefore, it is preferable that the nitrogen content in the semiconductor layer 140 is reduced as much as possible. For example, the nitrogen concentration obtained by secondary ion mass spectrometry is 5 × 10 18 atoms / cm 3 It is preferable to do the following:

[0161] By reducing the impurities in the semiconductor layer 140, the carrier density of the semiconductor layer 140 can be reduced. Therefore, the semiconductor layer 140 has a carrier density of 1×10 15 pieces / cm 3 below , preferably 1 x 10 13 pieces / cm 3 Less than 8 × 10, more preferably 11 pieces / cm 3 Not yet less than 1×10 11 pieces / cm 3 less than 1 x 10 10 pieces / cm 3 Less than 1 x 10 -9 pieces / cm 3 That's all.

[0162] The semiconductor layer 140 is formed using an oxide semiconductor having a low impurity concentration and a low density of defect states. By using the above method, a transistor having even better electrical characteristics can be manufactured. High purity intrinsic or actual silicon has a low impurity concentration and a low defect level density (low oxygen vacancy). A highly pure intrinsic or substantially highly pure intrinsic oxide semiconductor is Since there are fewer carrier generation sources, it may be possible to lower the carrier density. A transistor in which a channel region is formed in the semiconductor layer 140 formed using the oxide semiconductor. Transistors have electrical characteristics in which the threshold voltage is positive (also known as normally-off characteristics). In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor is prone to defect formation. The trap level density may also be low due to the low level density. A transistor in which the semiconductor layer 140 is formed using a qualitatively highly pure intrinsic oxide semiconductor. The off-state current is extremely small, and the voltage between the source and drain electrodes (drain voltage) is 1 In the range of V to 10V, the off-state current is below the measurement limit of the semiconductor parameter analyzer. , i.e. 1 × 10 -13 A characteristic of A or less can be obtained, and characteristic fluctuations can be further suppressed. It is possible.

[0163] Note that the transistor 50 using an oxide semiconductor for the semiconductor layer 140 has a structure in which, for example, the source and drain When the voltage between the transistor and the drain is set to about 0.1V, 5V, or 10V, The off-state current normalized by the channel width is reduced to several yA / μm to several zA / μm. This becomes possible.

[0164] In the off state, the transistor 50 connected to the display element (for example, the liquid crystal element 80) By using a transistor with extremely low leakage current, it is possible to retain image signals. For example, if the image signal is written at 11.6 μHz (1 day), the time can be extended. A frequency of 0.28mHz (1 time) or more and less than 0.1Hz (0.1 times per second), preferably 0.28mHz (1 time) or more and less than 0.1Hz (0.1 times per second), Images can be retained even at frequencies greater than 1Hz (once per hour) and less than 1Hz (once per second). This reduces the frequency of writing image signals. Of course, the power consumption of the panel 20 can be reduced by writing image signals at 1 Hz or less. Preferably, the frequency is 30Hz (30 times per second) or higher, more preferably 60Hz (6 times per second). The frequency can be greater than or equal to 960Hz (960 times per second) and less than 960Hz (960 times per second).

[0165] For the above reasons, by using a transistor including an oxide semiconductor, high reliability and power consumption can be achieved. A display panel with reduced power consumption can be manufactured.

[0166] In the case of a transistor using an oxide semiconductor, the semiconductor layer 140 is formed by sputtering or MOCVD (metal organic chemical vapor deposition). etal Organic Chemical Vapor Deposition) method The film can be formed by PLD (Pulse Laser Deposition) method, etc. When the semiconductor layer 140 is formed by sputtering, a large-area display device can be manufactured. It is possible.

[0167] The semiconductor layer 140 may be a semiconductor layer made of silicon or silicon germanium. The semiconductor layer formed of silicon or silicon germanium may be amorphous. The structure may be a crystalline structure, a polycrystalline structure, or a single crystalline structure.

[0168] <Conductive Layer 150, Conductive Layer 160> The conductive layer 150 and the conductive layer 160 are respectively a source electrode, a drain electrode, and a The conductive layer 150 and the conductive layer 160 function as electrodes of the capacitor. Chromium, copper, tantalum, titanium, molybdenum, nickel, iron, cobalt, tungsten or an alloy containing the above metal elements, or It is formed by using an alloy of a combination of manganese and zirconium. The conductive layer 150 may be formed using a metal element selected from a plurality of metal elements. The layer 160 may have a single layer structure or a laminated structure of two or more layers. Single layer structure of aluminum film, single layer structure of copper film containing manganese, titanium on aluminum film Two-layer structure with titanium film stacked on titanium nitride film, two-layer structure with titanium film stacked on titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film two-layer structure in which a copper film is laminated on a manganese-containing copper film; A titanium film is formed on the aluminum film, and then a titanium film is formed on the aluminum film. A three-layer structure is formed by laminating a copper film on a copper film containing manganese, and then laminating a copper film containing manganese on top of that. There are also three-layer structures that form aluminium, titanium, tantalum, tungsten, etc. , molybdenum, chromium, neodymium, and scandium. Alternatively, an alloy film or a nitride film may be used.

[0169] Insulating layer 170 The insulating layer 170 has a function of protecting the channel region of the transistor. , silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, gas oxide gallium, gallium oxide nitride, yttrium oxide, yttrium oxide nitride, hafnium oxide oxide insulating films such as hafnium oxide nitride; nitride insulating films such as silicon nitride and aluminum nitride; The insulating layer 170 may be a single layer or a laminated layer. .

[0170] The insulating layer 170 is an oxide insulating layer containing more oxygen than the oxygen required for the stoichiometric composition. It is preferable to form the film by using a material containing more oxygen than the oxygen required for the stoichiometric composition. When heated, the oxide insulating film containing oxygen is partially desorbed. Oxide insulating films containing more oxygen than TDS (Thermal Desorption Spectroscopy analysis shows that the film surface temperature is between 100°C and 700°C. , or the amount of oxygen atoms released in the range of 100°C to 500°C is 1.0 × 10 18 atoms / cm 3 or more, preferably 3.0 × 10 20 atoms / cm 3 Acid that is more than The oxygen contained in the insulating layer 170 is transferred to the semiconductor layer 140 by heat treatment. This makes it possible to reduce oxygen vacancies in the semiconductor layer 140.

[0171] Insulating layer 180 The insulating layer 180 is provided with an insulating film having a blocking effect against oxygen, hydrogen, water, etc. The diffusion of oxygen from the semiconductor layer 140 to the outside and the diffusion of hydrogen and water from the outside to the semiconductor layer 140 For example, aluminum oxide, magnesium oxide, silicon oxide, etc. can be prevented from entering. Silicon oxide nitride, silicon nitride oxide, silicon nitride, gallium oxide, germanium oxide tungsten oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide An insulating film containing one or more of tungsten oxide and tantalum oxide can be used. The insulating layer 180 may be a laminate of the above materials. , zirconium (Zr), etc. may be contained as impurities.

[0172] Insulating layer 181 The insulating layer 181 has a planarizing function. The insulating layer 181 is made of an inorganic material or an organic material. For example, silicon oxide, silicon oxynitride, aluminum oxide, etc. aluminum oxide nitride, gallium oxide, gallium oxide nitride, yttrium oxide, Oxide insulating films such as yttrium oxynitride, hafnium oxide, and hafnium oxynitride, silicon nitride Silicon, aluminum nitride and other nitride insulating films, polyimide resin, acrylic resin, polyimide Resins with heat resistance such as amide resin, benzocyclobutene resin, polyamide resin, and epoxy resin It is formed using organic materials.

[0173] Insulating layer 182 As the insulating layer 182, an insulating film having a blocking effect against oxygen, hydrogen, water, etc. is provided. In addition to the insulating layer 180, oxygen diffuses from the semiconductor layer 140 to the outside, and oxygen diffuses from the outside to the semiconductor layer 140. It is possible to further prevent hydrogen, water, etc. from penetrating into the layer 140. For example, aluminum oxide, Magnesium oxide, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride , gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide The insulating film may contain one or more of tantalum oxide, neodymium oxide, hafnium oxide, and tantalum oxide. The insulating layer 182 may also be a laminate of the above materials. Even if it contains impurities such as lanthanum (La), nitrogen, and zirconium (Zr), good.

[0174] Liquid crystal element 80 The liquid crystal element 80 is driven in, for example, a TN (Twisted Nematic) mode. The liquid crystal element 80 includes a liquid crystal layer 390, a conductive layer 220, and a conductive layer 380. do.

[0175] Although not shown in FIG. 11, the conductive layers 220 and 380 are provided on the side in contact with the liquid crystal layer 390. , and an alignment film may be provided for each of them.

[0176] The liquid crystal layer 390 is sandwiched between the conductive layer 220 and the conductive layer 380. The orientation of the liquid crystal molecules can be controlled by the electric field generated. As the method, for example, STN mode, VA mode, ASM (Axially Symmetry Mode) etic Aligned Micro-cell) mode, OCB(Optical ly Compensated Birefringence) mode, FLC (Fer Electric Liquid Crystal (AFLC) mode, erroelectric Liquid Crystal mode, MVA mode, P VA(Patterned Vertical Alignment) mode, IPS( In plane Switching mode or TBA (Transverse A bend alignment mode may also be used. In addition to the above mentioned driving method, ECB (Electrically Controlled Bias Circuit) LED Birefringence mode, PDLC (Polymer Dispersion rsed Liquid Crystal) mode, PNLC (Polymer Net There are various modes, such as the "Work" mode (Liquid Crystal mode) and the "Guest Host" mode. However, the present invention is not limited to this, and various liquid crystal elements and their driving methods can be used. Cut.

[0177] The liquid crystal element 80 is made of a liquid crystal composition containing a liquid crystal exhibiting a nematic phase and a chiral agent. In this case, a cholesteric phase or a blue phase The liquid crystal that shows the blue phase has a short response time of 1 msec or less, and is optically Because it is tropotropic, no alignment treatment is required and the viewing angle dependency is small.

[0178] <Conductive layer 220> The conductive layer 220 that reflects visible light may be made of, for example, aluminum, gold, platinum, silver, or nickel. gold, such as zinc, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium Metallic materials or alloys containing these metallic materials can be used. Lanthanum, neodymium, germanium, or the like may be added to gold. Aluminum and titanium alloys, aluminum and nickel alloys, aluminum and neodymium alloys , aluminum, nickel, and lanthanum alloys (Al-Ni-La) Alloys containing palladium (aluminum alloys), silver and copper alloys, silver, palladium and copper alloys (Ag- Pd-Cu, also known as APC), formed using alloys containing silver, such as silver-magnesium alloys An alloy containing silver and copper is preferable because it has high heat resistance. By laminating a metal film or a metal oxide film in contact with the aluminum alloy film, the oxidation of the aluminum alloy film can be prevented. The metal film and the metal oxide film may be made of titanium, titanium oxide, or the like. In addition, a conductive film that transmits visible light and a film made of a metal material are laminated. For example, a laminated film of silver and ITO, a laminated film of silver-magnesium alloy and ITO, etc. can be used.

[0179] <<Capacitor element 60, capacitor element 62>> The capacitance element 60 includes a conductive layer 120, an insulating layer 130, an insulating layer 131, a conductive layer 160, The conductive layer 120 functions as one electrode of the capacitor 60. The conductive layer 160 functions as the other electrode of the capacitor 60. Between the conductive layer 160 and the insulating layer 130, an insulating layer 131 is provided. The capacitance element 62 can be configured in the same manner as the capacitance element 60.

[0180] Conductive layer 380 The conductive layer 380 is formed using a conductive film that transmits visible light. Examples of the conductive film having transparency include indium (In), zinc (Zn), and tin (Sn ) It is preferable to use a material containing one selected from the group consisting of: The conductive film is typically made of indium tin oxide or indium containing tungsten oxide. oxide, indium zinc oxide with tungsten oxide, indium oxide with titanium oxide oxides, indium tin oxides containing titanium oxide, indium zinc oxides, silicon oxides Conductive oxides such as indium tin oxide can be used.

[0181] Insulating layer 330 The insulating layer 330 has a planarizing function. The insulating layer 330 is made of an inorganic material or an organic material. For example, silicon oxide, silicon oxynitride, aluminum oxide, etc. aluminum oxide nitride, gallium oxide, gallium oxide nitride, yttrium oxide, Oxide insulating films such as yttrium oxynitride, hafnium oxide, and hafnium oxynitride, silicon nitride Silicon, aluminum nitride and other nitride insulating films, polyimide resin, acrylic resin, polyimide Resins with heat resistance such as amide resin, benzocyclobutene resin, polyamide resin, and epoxy resin It is formed using organic materials.

[0182] 《Colored layer 360》 The colored layer 360 is a colored layer that transmits light of a specific wavelength band, for example, red, green, or blue. A color filter that transmits light in the yellow or yellow wavelength band can be used. The color layer is made of various materials using printing, inkjet, and photolithography methods. The white pixels are formed at the desired positions by etching or other methods. A transparent or white resin may be placed on top of the substrate.

[0183] 《Light blocking layer 18》 A material having a light-shielding property can be used for the light-shielding layer 18. For example, a resin in which a pigment is dispersed, In addition to resin containing dye, inorganic films such as black chrome films can be used for the light-shielding layer 18. The light-shielding layer 18 is made of a composite oxide containing a solid solution of inorganic oxides, inorganic oxides, or the like. It can be used for.

[0184] Spacer 240 An insulating material can be used for the spacer 240. For example, an inorganic material, an organic material, or For example, a laminate of inorganic and organic materials can be used. Films containing silicon or silicon nitride, acrylic or polyimide, or photosensitive resin etc. can be applied.

[0185] 《Adhesive layer 370》 The adhesive layer 370 may be made of an inorganic material, an organic material, or a composite material of an inorganic material and an organic material. can be done.

[0186] For example, light-curing adhesives, reaction-curing adhesives, heat-curing adhesives, and / or anaerobic adhesives. Organic materials such as adhesives can be used for the adhesive layer 370. They can be used singly or in combination.

[0187] The photocurable adhesive is an adhesive that is cured by, for example, ultraviolet light, electron beam, visible light, infrared light, etc. say.

[0188] Specifically, epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyrate) Adhesives containing EVA (ethylene vinyl acetate) resin, silica, etc. are used as adhesive layers. Can be used for 370.

[0189] In particular, when using a light-curing adhesive, the material hardens quickly, shortening the work time. In addition, since curing begins when irradiated with light, the effects of the film formation process are minimized. In addition, it can be cured at low temperatures, making it easy to control the working environment. As described above, by using a light-curing adhesive, the process can be shortened and processing can be performed at low cost. .

[0190] FPC42 The FPC 42 is electrically connected to the conductive layer 160 via the anisotropic conductive film 510. The signals are supplied from the FPC 42 to a driving circuit having a transistor 52 and a capacitance element 62. It is possible.

[0191] <Insulating layer 181 and insulating layer 182 with unevenness> The insulating layer 181 and the insulating layer 182 may have irregularities in the pixel region. When external light is incident on the conductive layer 220, the reflected light can be scattered. Can prevent shots.

[0192] <Insulating layer 181 and insulating layer 182 without unevenness, and scattering film 304> Alternatively, the insulating layer 181 and the insulating layer 182 may not have any unevenness. 10 shows a cross-sectional view of another configuration of the display device. In this case, the visible side of the substrate 300 (the front side of the display device) ) by using a scattering film 304 and an adhesive layer 377, it is possible to obtain the same effect as that shown in FIG. can.

[0193] <Another configuration 1 of the shape of the substrate edge of the display device> 13 shows a cross-sectional view of a display device having a different structure from that shown in FIG. 11(B). ) the substrate edge is formed in a shape without any irregularities, and the protective film 23 can be formed by the ALD method. can.

[0194] <Another configuration 2 of the shape of the substrate edge of the display device> In addition, when forming the protective film 23 on the display device 10, it can be selectively formed on the front surface and side surfaces. 14 and 15 show cross-sectional views of the display device.

[0195] In FIG. 14, the protective film 23 is formed on the rear surface side (substrate 100 side) as shown in FIG. 2(A). For example, in the configuration shown in FIG. It is possible to prevent the formation of the protective film 23 on the rear surface and the upper surface side of the FPC 42. In this case, the protective film is formed in a wraparound manner as in the region 13 at the edge of the substrate 100 or 300. Alternatively, as shown in FIG. 15, a protective film may be formed on the rear surface side using the method shown in FIG. It is possible to provide a region 14 where the light is not reflected.

[0196] <Another configuration 3 of the shape of the substrate edge of the display device> 16, 17, and 18 show examples of the display device 10 having a configuration different from that described above. The configuration example of FIG. 16 is a structure using the configuration of FIG. 4(A), and the configuration example of FIG. 17 is a structure using the configuration of FIG. 4(B). ) and the configuration example of FIG. 18 is a structure using the configuration of FIG. 5(A). In either case, the provision of the protective film 23 can prevent the intrusion of atmospheric components such as water, and the insulation The structure may not have layer 182 .

[0197] In addition, the structure of FIG. 18 has a smaller area for the substrate 300 than for the substrate 100, thereby providing a protection The film 23 can be formed more uniformly.

[0198] <Alternative configuration 4 of the shape of the substrate edge of the display device> 19 shows another example of the configuration of the display device 10. FIG. 19 shows a structure using FIG. 6(A). By providing the protective film 23, it is possible to obtain a structure that does not have the insulating layer 181 and the insulating layer 182. can.

[0199] <Combination with a display device touch sensor> The display device 10 can be combined with a touch sensor to form a touch panel. 20 and 21 show cross-sectional views of the touch panel. As shown in FIG. 20, the electrodes for the touch sensor The conductive layers 410 and 430 can be used as wirings. The conductive layer 380 used in the display panel can be used for the wiring for the touch sensor. By combining these, an in-cell type touch panel can be formed. The electrodes may be formed on the visible side (surface side) of the substrate 300 or on the inside (display element side). That's fine.

[0200] <Conductive Layer 410, Conductive Layer 430> The conductive layer 410 may be made of aluminum, chromium, copper, tantalum, titanium, molybdenum, or nickel. , iron, cobalt, and tungsten, or a material containing the above-mentioned metal elements as a component. It is formed by using an alloy of the above metal elements or an alloy combining the above metal elements. The present invention may be formed using one or more metal elements selected from the group consisting of tungsten, tungsten, zirconium, and the like. good.

[0201] The conductive layer may have a single layer structure or a laminated structure of two or more layers. a single layer structure of an aluminum film containing manganese; a single layer structure of a copper film containing manganese; Two-layer structure with titanium film laminated on titanium nitride film, two-layer structure with titanium film laminated on titanium nitride film, titanium nitride Two-layer structure with tungsten film stacked on top of film, tantalum nitride film or tungsten nitride film Two-layer structure with a tungsten film laminated on top, and two-layer structure with a copper film laminated on top of a manganese-containing copper film A titanium film is laminated on the titanium film, an aluminum film is laminated on the titanium film, and a titanium film is formed on the aluminum film. A three-layer structure consisting of a copper film laminated on a copper film containing manganese, and a manganese-containing film laminated on top of that. There are also three-layer structures that form a copper film. A combination of one or more elements selected from the group consisting of zinc, molybdenum, chromium, neodymium, and scandium. A combined alloy film or nitride film may also be used.

[0202] Alternatively, a conductive film such as the conductive layer 410, that is, a conductive film used for wiring and electrodes constituting a touch panel, may be used. Examples of materials that can be used include transparent conductive films containing indium oxide, tin oxide, zinc oxide, etc. (For example, ITO, etc.) are also used for the wiring and electrodes that make up touch panels. As a material that can be used, for example, a material with a low resistance value is preferable. Examples include silver, copper, Aluminum, carbon nanotubes, graphene, metal halides (silver halides, etc.) ) may also be used. Furthermore, a plurality of very thin (for example, a diameter of a few nanometers) Metal nanowires made of a conductor may be used. A metal mesh with a shape like a nanowire may be used. For example, Ag nanowire, Cu nanowire, , Al nanowires, Ag mesh, Cu mesh, Al mesh, etc. may also be used. For example, when Ag nanowires are used for the wiring and electrodes that make up a touch panel, they are sensitive to visible light. This allows the transmittance to be 89% or more and the sheet resistance to be 40Ω / □ or more and 100Ω / □ or less. Cut.

[0203] It is also an example of a material that can be used for the wiring and electrodes that make up the above-mentioned touch panel. Metal nanowires, metal meshes, carbon nanotubes, graphene, etc. Since the transmittance is high in the Also, a similar film can be used for the conductive layer 430. do.

[0204] <Insulating layer 420, insulating layer 440> The insulating layer 420 can be made of an inorganic material or an organic material. Silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, gallium oxide gallium oxide nitride, yttrium oxide, yttrium oxide nitride, hafnium oxide, Oxide insulating film such as hafnium nitride, nitride insulating film such as silicon nitride, aluminum nitride , polyimide resin, acrylic resin, polyimide amide resin, benzocyclobutene resin, poly It is made of heat-resistant organic materials such as amide resin and epoxy resin. The edge layer 440 can be a film similar to that of 420 .

[0205] <Transmissive LCD panel> In addition, a transmissive liquid crystal panel is used as the display panel mounted on the display device, as shown in FIG. The display device shown in FIG. 22 uses a liquid crystal element 81 as a display element. The display device also includes a polarizing plate 103, a polarizing plate 303, a backlight 104, and an adhesive. The polarizing plate 303 has layers 373, 374, and 375. The polarizing plate 303 has a protective substrate 30 2 is provided and bonded with an adhesive layer 376. Also, a reflective type such as a transistor The parts that are commonly used with the liquid crystal panel can be formed in the same way as the reflective liquid crystal panel. .

[0206] Liquid crystal element 81 The liquid crystal element 81 is driven in FFS (Fringe Field Switching) mode. The liquid crystal element 81 includes a liquid crystal layer 390 and a conductive layer 190. When the liquid crystal layer 390 receives a horizontal electric field from the conductive layer 190, the liquid crystal layer 390 The orientation of the molecules can be controlled.

[0207] Conductive layer 190 The conductive layer 190 is formed using a conductive film that transmits visible light. Examples of the conductive film having transparency include indium (In), zinc (Zn), and tin (Sn ) It is preferable to use a material containing one selected from the group consisting of: The conductive film is typically made of indium tin oxide or indium containing tungsten oxide. oxide, indium zinc oxide with tungsten oxide, indium oxide with titanium oxide oxides, indium tin oxide, indium zinc oxide, silicon or oxide Conductive oxides such as silicon-containing indium tin oxide can be used.

[0208] <<Capacitor 61, Capacitor 63>> The capacitor element 61 includes a conductive layer 400, an insulating layer 180, and a conductive layer 190. The conductive layer 400 functions as one electrode of the capacitor 61. The conductive layer 400 functions as the other electrode of the conductive layer 61. The capacitive element 63 is configured in the same manner as the capacitive element 61. can be done.

[0209] Conductive layer 400 The transistor 50 may be a transistor in which an oxide semiconductor is used for the semiconductor layer 140. By doing so, the conductive layer 400 can be formed of the same material as the semiconductor layer 140. In this case, the conductive layer 400 is formed by processing a film that is formed simultaneously with the semiconductor layer 140. The conductive layer 400 may have a similar crystal structure to the semiconductor layer 140 or a different crystal structure. In addition, the film formed simultaneously with the semiconductor layer 140 may have impurities or oxygen deficiencies. This allows the conductive layer 400 to be formed. Typical examples of impurities contained in the layer 400 include rare gases, hydrogen, boron, nitrogen, fluorine, and arsenic. Examples of noble gases are helium, neon, and argon. The conductive layer 400 may be, for example, a conductive layer. However, one aspect of the present invention is not limited to this. Therefore, the conductive layer 400 does not necessarily have to be conductive. may have similar properties to the semiconductor layer 140.

[0210] As described above, the semiconductor layer 140 and the conductive layer 400 are both formed on the insulating layer 130. The impurity concentration is different. Specifically, the impurity concentration of the conductive layer 400 is different from that of the semiconductor layer 140. For example, in the semiconductor layer 140, the hydrogen concentration obtained by secondary ion mass spectrometry is Degrees are 5 x 10 19 atoms / cm 3 Less than or equal to 5 x 10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Less than or equal to 5 x 10 17 at oms / cm 3 Less than 1 × 10 16 atoms / cm 3 On the other hand, In the electrode layer 400, the hydrogen concentration obtained by secondary ion mass spectrometry is 8×10 19 a toms / cm 3 or more, preferably 1 × 10 20 atoms / cm 3 More than 5, preferably x10 20atoms / cm 3 In addition, compared to the semiconductor layer 140, the conductive layer 4 The hydrogen concentration in 00 is twice as high, or even 10 times higher.

[0211] In addition, by exposing the oxide semiconductor film formed simultaneously with the semiconductor layer 140 to plasma, The oxide semiconductor film can be damaged and oxygen vacancies can be formed. When a film is formed on the conductive film by plasma CVD or sputtering, an oxide semiconductor The film is exposed to plasma to create oxygen vacancies, or to form openings in the insulating layer 170. In the etching treatment for forming the oxide semiconductor film, the oxide semiconductor film is exposed to plasma, and oxygen deficiency occurs. Alternatively, when the oxide semiconductor film is heated in a gas atmosphere containing a mixed gas of oxygen and hydrogen, hydrogen, a rare gas, or Exposure to plasma such as ammonia creates oxygen vacancies. By adding impurities to the oxide semiconductor film, oxygen vacancies are formed. The methods of adding impurities include ion doping, ion implantation, and plating. In the case of plasma treatment, the plasma is heated in a gas atmosphere containing the impurities to be added. By generating a plasma and performing plasma processing, the accelerated impurity ions are converted into oxides. By colliding with the semiconductor film, oxygen vacancies can be formed in the oxide semiconductor film.

[0212] An impurity, for example, hydrogen, is added to an oxide semiconductor film in which oxygen vacancies are formed by adding an impurity element. When oxygen is contained, hydrogen enters the oxygen vacancy site and a donor level is formed near the conduction band. As a result, the oxide semiconductor film becomes highly conductive and becomes a conductor. The semiconductor layer 140 can be called an oxide conductor film. The conductive layer 400 is formed of an oxide conductor film. It can be said that the conductive layer 400 is formed using an oxide semiconductor film with high conductivity. It can also be said that it is formed from a high metal oxide film.

[0213] The insulating layer 180 preferably contains hydrogen. Therefore, when the insulating layer 180 contains hydrogen, the hydrogen in the insulating layer 180 is absorbed by the semiconductor layer 14 As a result, the semiconductor layer 1 can be diffused into the oxide semiconductor film formed at the same time as the semiconductor layer 1. Impurities can be added to the oxide semiconductor film formed at the same time as the conductive layer 400. The conductivity can be increased.

[0214] By the above method, the conductive layer 400 is formed simultaneously with the semiconductor layer 140, and is made conductive after the formation. By adopting this configuration, it is possible to reduce manufacturing costs.

[0215] In general, an oxide semiconductor film is transparent to visible light due to its large energy gap. On the other hand, the oxide conductor film is an oxide semiconductor having a donor level near the conduction band. Therefore, the influence of absorption due to the donor level is small, and the oxide It has the same level of light transmittance as a semiconductor film.

[0216] As described above, the conductive layer 190 and the conductive layer 400 have a light-transmitting property. The capacitor element can be made to be light-transmitting as a whole.

[0217] <Another configuration of the transmissive LCD panel> In addition, transmissive LCD panels, like reflective LCD panels, have various peripheral shapes. The shape of the substrate 20 can be changed and the substrate 20 can have a corresponding protective coating 23 .

[0218] 23, 24, and 25 show cross-sectional views of a transmission type liquid crystal panel. The LCD panel can have a structure with no irregularities on the periphery as shown in FIG. As shown in FIG. 24, the rear surface of the display device (the substrate 100 having the transistor 50 and the liquid crystal element 81) 25. In addition, the structure shown in FIG. As shown, the front surface of the display device (the side of the substrate 300 that does not have a liquid crystal element) and the rear surface of the display device (the side of the substrate 300 that does not have a liquid crystal element) are 100) (the side not having the transistor 50 and the liquid crystal element 81) does not have the protective film 23. 24 and 25, the protective film 23 is partially wrapped around the substrate. As shown in FIG. 26, a protective film can be provided in the area 14 (the rear and side surfaces of the display device). The structure may be one without the membrane 23 .

[0219] In addition, in the case of a transmissive LCD panel, a touch panel can be formed by combining it with a touch sensor. The cross-sectional views of the touch panel are shown in Figures 27, 28, and 29. is an example of an in-cell type touch panel, and FIG. 27 shows a case where the protective film 23 is applied to the entire area except for the FPC portion. 28 is a configuration example in which the formation of the protective film 23 on the substrate 100 side is suppressed. FIG. 29 shows an example of a configuration having an on-cell touch panel.

[0220] <Organic EL panel> Furthermore, the display device 10 can be manufactured using the light-emitting element 70 as a display element.

[0221] 30, 31, and 32 are cross-sectional views of a display device using a light-emitting element. The portions that are used in common with the liquid crystal panel can be formed in the same manner.

[0222] "Light Emitting Element 70" The light emitting element 70 may be a self-luminous element, and may be irradiated by a current or a voltage. The category includes devices whose brightness is controlled, such as light-emitting diodes (LEDs), For example, an organic EL element, an inorganic EL element, etc. can be used. A layer containing a light-emitting organic compound (hereinafter also referred to as an EL layer 250) is disposed between the lower electrode and the upper electrode. ) can be used as the light-emitting element 70.

[0223] The light emitting elements are top emission type, bottom emission type, and dual emission type. The electrode on the light extraction side is made of a conductive material that is transparent to visible light. A conductive film that reflects visible light is used for the electrode on the side where light is not extracted.

[0224] A light emitting element is disposed between a lower electrode made of the conductive layer 220 and an upper electrode made of the conductive layer 260. When a voltage higher than the threshold voltage is applied, holes are injected into the EL layer 250 from the anode side, and the cathode The injected electrons and holes recombine in the EL layer 250, forming an EL The luminescent material contained in layer 250 emits light.

[0225] The EL layer 250 has at least a light-emitting layer. The EL layer 250 has a positive electrode as a layer other than the light-emitting layer. Highly hole-injecting materials, highly hole-transporting materials, hole-blocking materials, highly electron-transporting materials , a substance with high electron injection properties, or a bipolar substance (a substance with high electron transport properties and hole transport properties) The film may further include a layer containing a material such as a polymer.

[0226] The EL layer 250 can be made of either a low molecular weight compound or a high molecular weight compound. The layers constituting the EL layer 250 may each be formed by evaporation (vacuum evaporation) The method may include a transfer method, a printing method, an inkjet method, a coating method, etc. .

[0227] The light-emitting element may contain two or more luminescent materials, which may result in, for example, white light emission. For example, two or more luminescent materials emit light in complementary colors. White light can be obtained by selecting the luminescent material so that ), G (green), B (blue), Y (yellow), or O (orange) luminescent materials, A luminescent material that emits light containing spectral components of two or more of the colors of B can be used. For example, a light-emitting substance that emits blue light and a light-emitting substance that emits yellow light may be used. The emission spectrum of a luminescent material that emits yellow light may contain green and red spectral components. The light emitting element 70 has an emission spectrum in the visible region (for example, 350 nm). Two or more peaks within the range of It is preferable to have a

[0228] The EL layer 250 may have multiple light-emitting layers. The layers may be stacked in contact with each other or with a separating layer interposed therebetween. For example, a separation layer may be provided between the fluorescent-emitting layer and the phosphorescent-emitting layer.

[0229] The separation layer is used to convert, for example, the excited state of a phosphorescent material generated in the phosphorescent-emitting layer into the fluorescent material in the fluorescent-emitting layer. Prevents energy transfer (especially triplet energy transfer) to optical materials via the Dexter mechanism The separation layer only needs to be a few nanometers thick. 1 nm to 20 nm, or 1 nm to 10 nm, or 1 nm to 5 nm The separating layer may be a single material (preferably a bipolar material) or a plurality of materials. (preferably a hole transporting material and an electron transporting material).

[0230] The separation layer may be formed using a material contained in the light-emitting layer that is in contact with the separation layer. This facilitates the fabrication of the light-emitting device and reduces the driving voltage. When the separation layer is made of a host material, an assist material, and a phosphorescent material (guest material), In other words, the separation layer may be formed of a phosphorescent material and an assist material. The phosphorescent layer has a region that does not contain a phosphorescent material, and the phosphorescent layer has a region that contains a phosphorescent material. It is possible to deposit the separation layer and the phosphorescent light-emitting layer with or without the phosphorescent material. By forming the separation layer and the phosphorescent layer in the same chamber, it becomes possible to form the separation layer and the phosphorescent layer in the same chamber. This makes it possible to reduce manufacturing costs.

[0231] <Layer 230 for adjusting optical distance> The light-emitting device 70 in Figure 30 is an example in which a microcavity structure is combined with a light-emitting device. A microcavity structure is formed using the lower electrode and the upper electrode of the light-emitting element 70, and A specific light may be extracted efficiently.

[0232] Specifically, a reflective film that reflects visible light is used as the lower electrode, allowing some of the visible light to pass through and some to be reflected. A semi-transmitting and semi-reflective film that reflects light of a specific wavelength is used as the upper electrode. The upper electrode is disposed relative to the lower electrode so that the light can be extracted.

[0233] For example, the lower electrode functions as a lower electrode or an anode of a light-emitting element. The outer electrode is configured to resonate the desired light from the light-emitting layer and enhance its wavelength. The layer 230 for adjusting the optical distance is not limited to the lower electrode. The optical path length can be adjusted by at least one layer constituting the light emitting element. The layer 230 for adjusting the separation may be made of, for example, indium oxide or indium tin oxide (ITO). : Indium Tin Oxide), Indium Zinc Oxide, Zinc Oxide (ZnO), It can be formed using zinc oxide doped with gallium, or the like.

[0234] When combining a microcavity structure, a semi-transmissive and semi-reflective electrode is used for the upper electrode of the light-emitting element. The semi-transmitting / semi-reflective electrode can be made of a conductive material having reflectivity and a transparent material having The conductive material has a visible light reflectance of 20% or more and 80% or less. % or less, preferably 40% to 70%, and the resistivity is 1×10 -2 Ω·c Examples of semi-transparent and semi-reflective electrodes include conductive metals, It can be formed by using one or more alloys, conductive compounds, etc. It is preferable to use a material with a small electron density (3.8 eV or less). For example, Elements belonging to Group 1 or Group 2 (alkali metals such as lithium and cesium, calcium, strontium, etc.) Alkaline earth metals such as nickel, magnesium, etc.), alloys containing these elements (e.g., A rare earth metals such as Zn-Mg, Al-Li), europium, ytterbium, An alloy containing a metal, aluminum, silver, etc. can be used.

[0235] The electrodes may be formed by evaporation or sputtering. , a discharge method such as an inkjet method, a printing method such as a screen printing method, or a plating method. It can be formed by

[0236] It should be noted that the organic EL structure may be other than the microcavity structure. For example, there are different color-coded light-emitting elements, and light-emitting elements using a material that emits white light. A white EL method can be used.

[0237] 《Bulkhead 245》 An insulating material can be used for the partition wall 245. For example, an inorganic material, an organic material, or an inorganic material can be used. Materials in which organic materials and organic materials are laminated can be used. a film containing silicon or silicon nitride, acrylic or polyimide, or photosensitive resin, etc. Applicable.

[0238] <Conductive layer 200> The conductive layer 200 may be made of aluminum, chromium, copper, tantalum, titanium, molybdenum, or nickel. , iron, cobalt, and tungsten, or a material containing the above-mentioned metal elements as a component. It is formed by using an alloy of the above metal elements or an alloy combining the above metal elements. The present invention may be formed using one or more metal elements selected from the group consisting of tungsten, tungsten, zirconium, and the like. The conductive layer 200 may have a single layer structure or a laminated structure of two or more layers. , a single layer structure of aluminum film containing silicon, a single layer structure of copper film containing manganese, aluminum Two-layer structure with titanium film laminated on titanium nitride film, two-layer structure with titanium film laminated on titanium nitride film , a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a tantalum nitride film or a tungsten nitride film Two-layer structure with tungsten film stacked on top of tungsten film, and copper film stacked on top of copper film containing manganese A two-layer structure, a titanium film and an aluminum film laminated on top of the titanium film, A three-layer structure is formed by forming a titanium film, a copper film is laminated on a copper film containing manganese, and a manganese film is further laminated on top of that. There are also three-layer structures in which a copper film containing zinc is formed. One or more selected from aluminum, tungsten, molybdenum, chromium, neodymium, and scandium Alternatively, an alloy film made by combining a plurality of layers or a nitride film may be used.

[0239] Insulating layer 210 The insulating layer 210 has a planarizing function. The insulating layer 210 is made of an inorganic material or an organic material. For example, silicon oxide, silicon oxynitride, aluminum oxide, etc. aluminum oxide nitride, gallium oxide, gallium oxide nitride, yttrium oxide, Oxide insulating films such as yttrium oxynitride, hafnium oxide, and hafnium oxynitride, silicon nitride Silicon, aluminum nitride and other nitride insulating films, polyimide resin, acrylic resin, polyimide Resins with heat resistance such as amide resin, benzocyclobutene resin, polyamide resin, and epoxy resin It is formed using organic materials.

[0240] Conductive layer 260 The conductive layer 260 that transmits visible light may be made of, for example, indium oxide or indium tin oxide. (ITO: Indium Tin Oxide), indium zinc oxide, zinc oxide (Z nO), zinc oxide doped with gallium, etc. Also, gold, silver, , platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, Metallic materials such as copper, palladium, or titanium, alloys containing these metallic materials, or Nitrides of metal materials (for example, titanium nitride) can also be formed thin enough to have light transmission properties. Also, a laminated film of the above materials can be used as the conductive layer. For example, the conductivity can be increased by using a laminated film of an alloy of silver and magnesium and ITO. Graphene or the like may also be used.

[0241] <Color-coded OLED panel> In addition, organic EL elements can also be fabricated using a color-coded method, as shown in Figure 31. 30 in that the EL layer 250 is formed on the conductive layer 220 by a color-coded method. become.

[0242] <Flexible display device> The display device is fabricated on flexible substrates 101 and 301 as shown in FIG. The flexible substrate and the display device are attached using an adhesive layer 370. This allows the touch panel to be flexible and bendable, and to have a curved surface. It is possible to realize a touch panel. Furthermore, the thickness of the substrate can be made thinner. This allows the touch panel to be made lighter.

[0243] <Example of a method for manufacturing a flexible display device> Here, a method for manufacturing a flexible display device will be described.

[0244] Here, for convenience, a configuration including pixels and circuits, a configuration including optical members such as color filters, or The structure including the touch sensor is called an element layer. The element layer includes, for example, a display element. In addition to the display elements, wiring electrically connecting to the display elements, transistors used in pixels and circuits, etc. The device may include an element.

[0245] Also, in this case, a support (for example, a substrate 101 or The substrate 301) will be referred to as the base material.

[0246] As a method for forming an element layer on a substrate having a flexible insulating surface, A method of directly forming an element layer, and a method of forming an element layer on a supporting substrate and then bonding the element layer and the supporting substrate together. and a method of peeling off the device layer and transferring it to a substrate.

[0247] When the material constituting the base material is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, as this simplifies the process. If the element layer is formed while fixed to a supporting substrate, it can be easily transported within and between devices. This is preferable because

[0248] In addition, when a method is used in which an element layer is formed on a supporting substrate and then transferred to a substrate, the supporting substrate is first A release layer and an insulating layer are laminated on a substrate, and an element layer is formed on the insulating layer. The element layer is peeled off and transferred to the base material. The material may be selected so that release occurs at the interface of the layers or within the release layer.

[0249] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and an oxidized layer of the metal material A layer including a material is stacked, and a layer in which silicon nitride or silicon oxynitride is stacked on a peeling layer. It is preferable to use a high melting point metal material. The degree of freedom in the process of forming the element layer is increased. This is preferable.

[0250] Peeling can be achieved by applying mechanical force, etching the peeling layer, or by splitting one of the peeling interfaces. The peeling may be performed by dropping a liquid onto the peeled portion and allowing it to penetrate into the entire peeling interface. Alternatively, the peeling may be performed by applying heat to the peeling interface, taking advantage of the difference in thermal expansion.

[0251] In addition, if peeling is possible at the interface between the support substrate and the insulating layer, it is not necessary to provide a peel layer. For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. A part of the organic resin is locally heated using a laser beam or the like to form a peeling starting point, The separation may be performed at the interface between the glass and the insulating layer. A metal layer is provided between the layers, and the metal layer is heated by passing an electric current through the metal layer. In this case, the insulating layer made of organic resin may be peeled off at the interface between the metal layer and the insulating layer. The border layer can be used as a substrate.

[0252] Examples of flexible substrates include polyethylene terephthalate (PET), polyethylene terephthalate (PE ... Polyester resins such as ethylene naphthalate (PEN), polyacrylonitrile resins, poly Imide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene Tersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin Examples include resins such as grease, polyamide-imide resins, and polyvinyl chloride resins. It is preferable to use a material with a low thermal expansion coefficient, for example, -6 / K or less Suitable materials for use include triamide-imide resin, polyimide resin, and PET. A substrate made of resin-impregnated fiber (also called prepreg) or a substrate made of inorganic filler mixed with organic resin Substrates with reduced thermal expansion coefficients can also be used.

[0253] When the above materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High-strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples include polyvinyl alcohol fibers, polyester fibers, polyamide fibers, etc. Fibers based on cellulose, polyethylene fibers, aramid fibers, polyparaphenylene benzobisoxa Examples of the fiber include sol fiber, glass fiber, and carbon fiber. Glass fiber includes E-glass. Examples of glass fibers include those made of S-glass, D-glass, Q-glass, etc. The fiber is impregnated with resin and the resin is hardened to form a flexible structure. As a flexible substrate, a substrate having a structure made of a fiber body and a resin may be used. The use of a structure is preferable because it improves reliability against damage caused by bending or local pressure. .

[0254] Alternatively, a thin glass, metal, or the like that is flexible may be used as the substrate. Alternatively, a composite material in which glass and a resin material are bonded together may be used.

[0255] For example, in the case of the configuration shown in FIG. 32, a first release layer and an insulating layer 112 are sequentially formed on a first support base material. After forming the first supporting structure, the upper layer structure is formed. After forming the second release layer and the insulating layer 312 on the material in this order, the structure above them is formed. Next, the first supporting substrate and the second supporting substrate are bonded together with an adhesive layer 370. Thereafter, the second release layer is peeled off at the interface between the second release layer and the insulating layer 312, thereby forming the second support substrate and the second The release layer is removed, and the insulating layer 312 and the substrate 301 are bonded together with the adhesive layer 372. The first release layer and the insulating layer 112 are peeled off at the interface between them, so that the first support substrate and the first release layer are separated. The insulating layer 112 and the substrate 101 are then bonded together with an adhesive layer 371. The separation and bonding may be performed on either side first.

[0256] The above is a description of the method for manufacturing a flexible display device.

[0257] Note that the structures and methods described in this embodiment may be different from the structures and methods described in other embodiments. can be used in appropriate combination.

[0258] (Embodiment 5) The fifth embodiment shows a modification of the transistor structure described in the fourth embodiment.

[0259] 《Stacked oxide semiconductor》 The semiconductor layer 140 is formed by stacking a plurality of oxide semiconductor films having different atomic ratios of metal elements. For example, in the transistor 51, as shown in FIG. 33(B), oxide semiconductor layers 141 and 142 may be stacked in this order on the oxide semiconductor layer 30. As shown in FIG. 1, an oxide semiconductor layer 142, an oxide semiconductor layer 141, and an oxide The oxide semiconductor layer 142, the oxide semiconductor layer 143, and the oxide semiconductor layer 144 may be stacked in this order. The oxide semiconductor layer 141 has a different atomic ratio of metal elements from the oxide semiconductor layer 141.

[0260] <Channel protection type and top gate structure> The transistor 50 shown in FIG. 12 is a bottom gate transistor. As a modification of the transistor 50, a transistor shown in FIG. 11(B) shows transistor 50. 34(A) shows a channel etch type, but as shown in the cross-sectional view of FIG. A channel protection transistor 53 having a channel protection layer may be used. The transistor 54 may have a top gate structure as shown.

[0261] The transistors 52 in the peripheral circuits (such as gate drivers) all have the same structure. The pixel section may have two or more transistors. The rotors 50 may all have the same structure, or may have two or more different structures.

[0262] Alternatively, the transistor described in this embodiment may be a transistor including an oxide semiconductor. However, one embodiment of the present invention is not limited to this. Alternatively, depending on the situation, one embodiment of the present invention may be a semiconductor device using a semiconductor material other than an oxide semiconductor. A transistor may also be used.

[0263] For example, the semiconductor layer 140 may be made of a group 14 element, a compound semiconductor, or an oxide semiconductor. Specifically, semiconductors containing silicon and semiconductors containing gallium arsenide can be used. A transistor using a conductor or an organic semiconductor can be applied.

[0264] For example, single crystal silicon, polysilicon, or amorphous silicon may be used for the transistor. This can be applied to semiconductor layers.

[0265] Note that the structures and methods described in this embodiment may be different from the structures and methods described in other embodiments. can be used in appropriate combination.

[0266] (Embodiment 6) In this embodiment, a structural example of a display panel according to one embodiment of the present invention will be described with reference to FIGS. do.

[0267] [Configuration example] FIG. 36A is a top view of a display device of one embodiment of the present invention, and FIG. 36B is a top view of a display device of one embodiment of the present invention. A pixel circuit that can be used when a liquid crystal element is applied to a pixel of a display device of one embodiment will be described. 36C is a circuit diagram showing a pixel of a display device according to one embodiment of the present invention. 1 is a circuit diagram illustrating a pixel circuit that can be used when an organic EL element is applied. .

[0268] The transistors arranged in the pixel portion can be formed according to the above embodiment modes. Since the transistor can be easily made into an n-channel type, the n-channel transistor in the driver circuit can be easily made into an n-channel type. A part of the driver circuit can be configured with a transistor of the same type as the transistor of the pixel part. In this way, the transistor shown in the above embodiment is formed in the pixel portion or the driver circuit. By using the above, a highly reliable display device can be provided.

[0269] An example of a top view of an active matrix display device is shown in Figure 36(A). On the surface of 700, there are a pixel portion 701, a scanning line driving circuit 702, a scanning line driving circuit 703, a signal line driving circuit 704, a signal line driving circuit 705, a signal line driving circuit 706, a signal line driving circuit 707, a signal line driving circuit 708, a signal line driving circuit 709, a signal line driving circuit 710, a signal line driving circuit 711, a signal line driving circuit 71 The pixel portion 701 has a signal line driver circuit 704. A plurality of signal lines are extended from the signal line driver circuit 704. A plurality of scanning lines are connected to a scanning line driving circuit 702 and a scanning line driving circuit 703. The scanning lines and the signal lines are arranged in such a manner that they extend from each other. The display device has a substrate 700 that is connected to a flexible printed circuit board (FPC) or the like. It is connected to a timing control circuit (also called a controller or control IC) via a connection. do.

[0270] In FIG. 36(A), a scanning line driver circuit 702, a scanning line driver circuit 703, a signal line driver circuit The path 704 is formed on the same substrate 700 as the pixel section 701. Since the number of components such as the operating circuit is reduced, costs can be reduced. If a drive circuit is provided in the part, it becomes necessary to extend the wiring, and the number of connections between the wiring increases. When the driver circuit is provided on the same substrate 700, the number of connections between the wirings can be reduced, and reliability can be improved. This can improve the productivity or yield.

[0271] <Liquid crystal display device> An example of the circuit configuration of a pixel is shown in Figure 36(B). 1 shows a pixel circuit that can be applied to a pixel of a display device.

[0272] This pixel circuit can be applied to a configuration in which one pixel has multiple pixel electrode layers. The pixel electrode layer is connected to different transistors, and each transistor is driven by a different gate signal. This allows individual pixels in a multi-domain design to The signals applied to the electrode layers can be controlled independently.

[0273] The gate wiring 712 of the transistor 716 and the gate wiring 713 of the transistor 717 are , are separated so that different gate signals can be applied. is used in common for transistor 716 and transistor 717. The transistors 16 and 717 may be any of the transistors described in the above embodiment modes. This makes it possible to provide a highly reliable liquid crystal display device.

[0274] The transistor 716 is electrically connected to a first pixel electrode. The second pixel electrode is electrically connected to the first pixel electrode 7. The first pixel electrode and the second pixel electrode are The first pixel electrode and the second pixel electrode are separated from each other. For example, the first pixel electrode may be V-shaped.

[0275] The gate electrode of the transistor 716 is connected to the gate wiring 712, and the gate electrode of the transistor 717 is connected to the gate wiring 712. The gate electrode is connected to the gate wiring 713. By giving different gate signals to the transistors 716 and 717, the operation timing of the transistors 716 and 717 is By varying the polarity, the orientation of the liquid crystal can be controlled.

[0276] Also, the capacitor wiring 710, the gate insulating film functioning as a dielectric, and the first pixel electrode layer or A storage capacitor may be formed by a capacitor electrode electrically connected to the second pixel electrode layer.

[0277] The multi-domain structure has a first liquid crystal element 718 and a second liquid crystal element 719 in one pixel. The first liquid crystal element 718 is composed of a first pixel electrode layer, a counter electrode layer, and a liquid crystal layer therebetween. The second liquid crystal element 719 is composed of a second pixel electrode layer, a counter electrode layer, and a liquid crystal layer therebetween. do.

[0278] Note that the pixel circuit shown in FIG. 36(B) is not limited to this. The pixel circuit is newly equipped with switches, resistors, capacitors, transistors, sensors, or logic elements. Circuits etc. may be added.

[0279] <Organic EL display device> Another example of the circuit configuration of a pixel is shown in Figure 36(C). 1 shows the pixel structure of the device.

[0280] In an organic EL element, when a voltage is applied to the light-emitting element, electrons are released from one of the pair of electrodes. Holes are injected from the other side into the layer containing the light-emitting organic compound, causing a current to flow. The recombination of electrons and holes causes the light-emitting organic compound to form an excited state, which This mechanism is what causes this type of luminescence. The element is called a current-excited light-emitting element.

[0281] FIG. 36(C) is a diagram showing an example of an applicable pixel circuit. An example in which two transistors are used in one pixel is shown. The film can be used for the channel formation region of an n-channel transistor. The pixel circuit can be applied with digital time gray scale driving.

[0282] Regarding the configuration of applicable pixel circuits and pixel operation when digital time gray scale driving is applied, and explain.

[0283] The pixel 720 includes a switching transistor 721, a driving transistor 722, and a light-emitting element The switching transistor 721 has a gate electrode 724 and a capacitor element 723. The source electrode layer is connected to the scanning line 726, and the first electrode (the source electrode layer and the drain electrode layer) The second electrode (the other of the source electrode layer and the drain electrode layer) is connected to the signal line 725. ) is connected to the gate electrode layer of the driving transistor 722. 22, the gate electrode layer is connected to a power supply line 727 via a capacitor element 723, and the first electrode is connected to a power supply line 727. The second electrode is connected to the first electrode (pixel electrode) of the light emitting element 724. The second electrode of the light emitting element 724 corresponds to the common electrode 728. It is electrically connected to a common potential line formed on the substrate.

[0284] The switching transistor 721 and the driving transistor 722 may be of other embodiments. This allows for the development of highly reliable organic EL devices. A display device can be provided.

[0285] The potential of the second electrode (common electrode 728) of the light-emitting element 724 is set to a low power supply potential. The power supply potential is a potential lower than the high power supply potential supplied to the power supply line 727, for example, GND , 0V, etc. can be set as the low power supply potential. The high power supply potential and the low power supply potential are set so that the potential difference is equal to or greater than the threshold voltage. By applying a voltage to the light emitting element 724, a current flows through the light emitting element 724, causing it to emit light. The forward voltage in 4 refers to the voltage required to achieve the desired brightness, and is at least the forward threshold. Includes low voltages.

[0286] The capacitor 723 can be saved by substituting the gate capacitance of the driving transistor 722. The gate capacitance of the driving transistor 722 can be omitted. A capacitance may be formed between the electrode layer and the insulating layer.

[0287] Next, a signal input to the driving transistor 722 will be described. In this case, the driving transistor 722 is either fully on or fully off. A video signal such as this is input to the driving transistor 722. In order to operate the drive transistor 722 in the linear region, a voltage higher than the voltage of the power supply line 727 is applied to the drive transistor 722. A signal line 725 is connected to the gate electrode layer of the transistor 722. A voltage equal to or greater than the threshold voltage Vth of the input transistor 722 is applied.

[0288] When analog gradation driving is performed, the gate electrode layer of the driving transistor 722 is connected to the light emitting element 72 A voltage equal to or greater than the sum of the forward voltage of the transistor 724 and the threshold voltage Vth of the driving transistor 722 is applied. In addition, a video signal is input so that the driving transistor 722 operates in the saturation region. A current flows through the light emitting element 724. In addition, the driving transistor 722 is operated in a saturation region. In order to achieve this, the potential of the power supply line 727 is set higher than the gate potential of the driving transistor 722. By converting the video signal into an analog signal, a current corresponding to the video signal is passed through the light emitting element 724. , analog gray scale driving can be performed.

[0289] The configuration of the pixel circuit is not limited to the pixel configuration shown in FIG. (C) The pixel circuit shown in FIG. 1 includes a switch, a resistor, a capacitor, a sensor, a transistor, or a logic element. A logic circuit or the like may be added.

[0290] When the transistor illustrated in the above embodiment is applied to the circuit illustrated in FIG. The source electrode (first electrode) is on the low potential side, and the drain electrode (second electrode) is on the high potential side. Furthermore, the potential of the first gate electrode is controlled by a control circuit or the like. The second gate electrode is supplied with a potential lower than that applied to the source electrode by a wiring (not shown). Any of the above-mentioned potentials may be input.

[0291] For example, in this specification and the like, the term "display element," "display device having a display element," "light emitting element," "light emitting device," "light emitting element ... A light-emitting device, which is a device having a light-emitting element and a light-emitting element, can be used in various forms or in various The display element, the display device, the light-emitting element or the light-emitting device may include, for example, For example, EL (electroluminescence) elements (EL elements containing organic and inorganic materials, organic EL elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs) etc.), transistors (transistors that emit light according to the current), electron-emitting elements, liquid crystal elements , electronic ink, electrophoretic element, grating light valve (GLV), plasma display Using MEMS (Micro-Electro-Mechanical Systems) Display element, Digital Micromirror Device (DMD), DMS (Digital Micromirror Shutter), MIRASOL (registered trademark), IMOD (Interference Module ration element, shutter-type MEMS display element, optical interference-type MEMS display element , electrowetting element, piezoelectric ceramic display, carbon nanotube In addition to these, the device has at least one of an electric or magnetic display element. The display medium has contrast, brightness, reflectance, transmittance, etc. that change due to electrochemical effects. An example of a display device using an EL element is an EL display. An example of a display device using electron-emitting elements is a field emission display ( FED) or SED type flat panel display (SED: Surface-conductive tion Electron-emitter Display). An example of a display device using the liquid crystal display (transmissive liquid crystal display, semi-transmissive liquid crystal display) is LCD display, reflective LCD display, direct view LCD display, projection LCD display Electronic ink, electronic liquid powder, or electrophoretic elements are used. An example of a display device that uses this technology is electronic paper. When realizing a reflective LCD, some or all of the pixel electrodes are For example, a part or the whole of the pixel electrode may be formed as a reflective electrode. The reflective electrode may be made of aluminum, silver, or the like. It is also possible to provide a memory circuit such as an SRAM below the When using LEDs, the LED electrodes and nitride semiconductors Graphene or graphite may be placed under the In this way, graphene or graphite may be provided. By this, a nitride semiconductor, for example, an n-type GaN semiconductor layer having a crystal, etc. can be formed thereon. It is easy to form a film. Furthermore, a p-type GaN semiconductor layer with crystals can be formed on it. By providing a crystal, an LED can be constructed. An AlN layer may be provided between the n-type GaN semiconductor layer and the LED. The aN semiconductor layer may be formed by MOCVD. The GaN semiconductor layer of the LED can also be formed by sputtering.

[0292] Note that the structures and methods described in this embodiment may be different from the structures and methods described in other embodiments. can be used in appropriate combination.

[0293] (Embodiment 7) In this embodiment, a structural example of a touch panel according to one embodiment of the present invention will be described with reference to FIGS. do.

[0294] <Positional relationship between transistor and touch sensor wiring> Figure 37 shows a top view showing the positional relationship between pixels, transistors, and touch sensor wiring. The conductive layer 410, which is an electrode for the touch sensor, overlaps, for example, the source line 91 and the gate line 92. They can be arranged in parallel without overlapping. The conductive layer 410, which is the wiring of the touch sensor, does not overlap with the transistor 50 and the capacitance element 61. Although an example is shown, they may be arranged overlapping each other. Although they are arranged without overlapping, they can also be arranged overlapping. The conductive layer 430 and the conductive layer 380, which can also play a role in the above-mentioned embodiment, are also arranged in a similar manner. This can be done.

[0295] <Configuration example of sensor electrodes, etc.> Below, a more specific configuration example of the input device 90 having a function as a touch sensor will be described. This will be explained with reference to the drawings.

[0296] 38(A) shows a top view of the input device 90. The input device 90 has a plurality of electrodes on a substrate 930. It has an electrode 931, a plurality of electrodes 932, a plurality of wirings 941, and a plurality of wirings 942. The board 930 has an FPC that is electrically connected to each of the plurality of wirings 941 and the plurality of wirings 942. 38(A), an IC 951 is provided on the FPC 950. This shows an example of how this is done.

[0297] 38(B) shows an enlarged view of the area surrounded by the dashed line in FIG. 38(A). The electrode 931 , a plurality of diamond-shaped electrode patterns are arranged in a row in the horizontal direction of the paper. The diamond-shaped electrode patterns are electrically connected to each other. The diamond-shaped electrode pattern has a shape that is connected in the vertical direction of the paper, and the diamond-shaped electrodes are arranged in a row. The patterns are electrically connected to each other. Also, the electrode 931 and the electrode 932 are At this intersection, the electrodes 931 and 932 are An insulator is sandwiched between the wires to prevent electrical short circuits.

[0298] As shown in FIG. 38(C), the electrode 932 is connected to a plurality of diamond-shaped electrodes 933. , and bridge electrodes 934. The island-shaped electrodes 933 are arranged in the vertical direction of the drawing. The two adjacent electrodes 933 are electrically connected by a bridge electrode 934. With this structure, the electrode 933 and the electrode 931 are formed using the same conductive film. By processing, they can be formed simultaneously. Therefore, the variation in the film thickness of these layers can be suppressed. This makes it possible to suppress variations in the resistance value and light transmittance of each electrode depending on the location. In this example, the electrode 932 has a bridge electrode 934. 1 may have such a configuration.

[0299] As shown in FIG. 38(D), the diamond-shaped electrodes 931 and 932 shown in FIG. 38(B) The inside of the electrode pattern may be hollowed out, leaving only the outline. In this case, if the width of the electrodes 931 and 932 is thin enough not to be visible to the user, As will be described later, the electrodes 931 and 932 may be made of a light-shielding material such as a metal or alloy. 38(D) is connected to the bridge electrode 934. It may also be configured to have:

[0300] One electrode 931 is electrically connected to one wiring 941. The electrodes 931 and 932 are electrically connected to one wiring 942. One of them corresponds to a row wiring, and the other corresponds to a column wiring.

[0301] As an example, in FIGS. 39(A), 39(B), 39(C), and 39(D), an electrode 931 9A and 9B show enlarged schematic views of a portion of the electrode 932. The electrodes may have various shapes. can be done.

[0302] In FIG. 40(A), FIG. 40(B), and FIG. 40(C), instead of the electrode 931 and the electrode 932, This shows an example in which electrodes 936 and 937 having thin wire-like upper surfaces are used. 40(A), linear electrodes 936 and 937 are arranged in a grid pattern. In Fig. 40(B) and Fig. 40(C), the electrodes 936 and 937 are arranged in a zigzag pattern. They are arranged in a circle.

[0303] Enlarged views of the area enclosed by the dashed line in Figure 40(B) are shown in Figures 41(A), 41(B), and 41(C). (C) shows an enlarged view of the area enclosed by the dashed line in Figure 40(C), and Figures 41(D) and 41(E) show the enlarged view of the area enclosed by the dashed line in Figure 40(C). 41(F) are shown in Fig. 41(C). Also, in each figure, an electrode 936, an electrode 937, and As shown in Figures 41(B) and 41(E), 41(A) and 41(D), the straight line portions of the electrodes 936 and 937 have corners. It may have a meandering shape as shown in Fig. 41(C) and Fig. 41(F). The line may have a meandering shape so that it is continuous.

[0304] <Configuration example of an in-cell touch panel> Below is an example of the configuration of a touch panel in which a touch sensor is incorporated into a display unit having multiple pixels. Here, an example in which a liquid crystal element is used as a display element provided in a pixel will be described. Shows.

[0305] FIG. 42(A) shows a part of a pixel circuit provided in the display unit of the touch panel exemplified in this configuration example. FIG.

[0306] One pixel has at least a transistor 3503 and a liquid crystal element 3504. A wiring 3501 is connected to the gate of the transistor 3503, and a wiring 350 is connected to either the source or the drain. 2 are electrically connected to each other.

[0307] The pixel circuit includes a plurality of wirings (for example, wiring 3510_1, wiring 3510_2, wiring 3510_3, wiring 3510_4, wiring 3510_5, wiring 3510_6, wiring 3510_7, wiring 3510_8, wiring 3510_9, wiring 3510_10, wiring 3510_11, wiring 3510_12, wiring 3 2) and a plurality of wirings (for example, wiring 3511) extending in the Y direction, which are mutually The electrodes are arranged to intersect with each other, forming a capacitance therebetween.

[0308] In addition, among the pixels provided in the pixel circuit, some adjacent pixels are provided with The electrodes of the liquid crystal elements are electrically connected to each other to form one block. The blocks are divided into island-like blocks (e.g., block 3515_1, block 3515_2) and Linear blocks extending in the Y direction (for example, block 3516) are classified into two types. Although FIG. 42 shows only a part of the pixel circuit, these two types of The blocks are arranged repeatedly in the X and Y directions.

[0309] The wiring 3510_1 (or 3510_2) extending in the X direction is arranged in an island-shaped block 3515 _1 (or block 3515_2). The wiring 3510_1 extending in the X direction is discontinuously arranged along the X direction via a linear block. The island-shaped blocks 3515_1 are electrically connected to each other. The wiring 3511 is electrically connected to a linear block 3516 .

[0310] FIG. 42(B) shows a plurality of wirings 3510 extending in the X direction and a plurality of wirings 3510 extending in the Y direction. 3511. Each of the wirings 3510 extending in the X direction is An input voltage or a common potential can be input to the wiring 35 extending in the Y direction. A ground potential is input to each of the terminals 11, or the wiring 3511 is electrically connected to the detection circuit. It is possible.

[0311] The operation of the above-mentioned touch panel will be explained below with reference to FIGS. 43(A) and 43(B). do.

[0312] Here, one frame period is divided into a writing period and a detection period. This is the period in which the image data is written, and the wiring 3510 (also called the gate line) is sequentially selected. On the other hand, the detection period is the period during which sensing is performed by the touch sensor, and the X direction The wiring 3510 extending to the above is selected in sequence, and an input voltage is input.

[0313] 43A is an equivalent circuit diagram during the writing period. During the writing period, A common potential is input to both the wiring 3510 extending in the Y direction and the wiring 3511 extending in the Y direction. do.

[0314] 43(B) is an equivalent circuit diagram at a certain point in the detection period. Each of the wirings 3511 extending in the X direction is electrically connected to the detection circuit. Of the wirings 3510, the input voltage is input to the selected one, and the other ones are common. A conducting potential is input.

[0315] The driving method exemplified here is applicable not only to the in-cell method but also to the touch panel exemplified above. This can be applied to the above-mentioned driving method examples and can be used in combination with the above-mentioned driving method examples. do.

[0316] In this way, the image writing period and the period for sensing by the touch sensor are separated. This prevents noise caused by touch sensitivity when writing to pixels. This can suppress the decrease in sensitivity of the sensor.

[0317] Note that the structures and methods described in this embodiment may be different from the structures and methods described in other embodiments. can be used in appropriate combination.

[0318] (Embodiment 8) In this embodiment, a structure of an oxide semiconductor film will be described.

[0319] <Film formation method> An example of a method for forming a CAAC-OS film will be described below.

[0320] FIG. 44(A) is a schematic diagram of the inside of the film formation chamber. CAAC-OS is formed by sputtering. A film can be formed.

[0321] As shown in FIG. 44(A), the substrate 5220 and the target 5230 are arranged to face each other. Between the substrate 5220 and the target 5230, there is a plasma 5240. In addition, a heating mechanism 5260 is provided below the substrate 5220. The pad 5230 is bonded to the backing plate. A number of magnets are placed facing the target 5230. The sputtering method that uses a magnetic field to increase the film deposition rate is called magnetron sputtering. Called.

[0322] The distance d between the substrate 5220 and the target 5230 (target-substrate distance (TS distance) ) is 0.01 m or more and 1 m or less, preferably 0.02 m or more and 0.5 m or less. The deposition chamber is mostly filled with deposition gas (e.g., oxygen, argon, or oxygen at 5% by volume). The pressure is 0.01 Pa to 100 Pa, preferably The pressure is controlled to be 0.1 Pa or more and 10 Pa or less. By applying pressure, discharge starts and plasma 5240 is observed. A high density plasma region is formed near 5230 by the magnetic field. In the region, the deposition gas is ionized to generate ions 5201. The ions 5201 are For example, the oxygen cation (O +) and argon cations (Ar + ) etc.

[0323] The target 5230 has a polycrystalline structure having a plurality of crystal grains, and each of the crystal grains has As an example, FIG. 45 shows a target 5230 containing InMZnO 4 (element M is, for example, aluminum, gallium, yttrium or tin) Figure 45 shows the crystal structure of InMZnO4 when observed from a direction parallel to the b axis. In the InMZnO4 crystal, the oxygen atoms have a negative charge, so that the adjacent There is a repulsive force between the two M-Zn-O layers. There is a cleavage plane between two adjacent M-Zn-O layers.

[0324] Ions 5201 generated in the high-density plasma region are applied to the target 5230 side by the electric field. The cleavage plane is accelerated and eventually collides with the target 5230. At this time, flat or pellet-like particles are formed from the cleavage plane. Pellets 5200, which are pellet-shaped sputtered particles, are peeled off (see FIG. 44(A)). The pellet 5200 is the portion sandwiched between the two cleavage planes shown in FIG. When only 200 is extracted, the cross section looks like Figure 44(B) and the top surface looks like Figure 44(C). It can be seen that the pellet 5200 is formed by the impact of the collision of the ion 5201. The target may be distorted due to the peeling of pellet 5200. Particle 5203 is also ejected from 5230. Particle 5203 is one atom or a few atoms in size. Therefore, the particle 5203 is an atomic particle. It can also be called es).

[0325] The pellet 5200 is a flat or pellet-shaped pellet having a triangular, for example, equilateral triangular, plane. The pellet 5200 is a sputtered particle. Alternatively, the pellet 5200 has a hexagonal, for example, regular hexagonal, plane. The sputtered particles are in the form of plates or pellets. However, the shape of the pellets 5200 is , triangles, and hexagons are not limited to these shapes. For example, the shape may be a combination of multiple triangles. For example, a quadrilateral (e.g., a rhombus) made up of two triangles (e.g., an equilateral triangle) This may also be the case.

[0326] The thickness of the pellet 5200 is determined depending on the type of deposition gas. 200 has a thickness of 0.4 nm or more and 1 nm or less, preferably 0.6 nm or more and 0.8 nm or less For example, the pellet 5200 has a width of 1 nm or more and 3 nm or less, preferably 1 For example, a target having an In-M-Zn oxide Ions 5201 are bombarded onto 5230. This causes the M-Zn-O layer, In-O layer, and The pellet 5200 having three layers, the M-Zn-O layer, and the M-Zn-O layer, is peeled off. As the target 5230 peels off, the particle 5203 is also ejected from the target 5230. It has an aggregate of one atom or several atoms. Therefore, the particle 5203 is called an atomic particle (at They can also be called omic particles.

[0327] When the pellet 5200 passes through the plasma 5240, the surface may become negatively or positively charged. For example, if the pellet 5200 is in the plasma 5240, 2- negative charge from As a result, the oxygen atoms on the surface of the pellet 5200 may become negatively charged. In addition, when the pellet 5200 passes through the plasma 5240, It may grow by combining with indium, element M, zinc, or oxygen in 0.

[0328] The pellets 5200 and particles 5203 that have passed through the plasma 5240 are deposited on the surface of the substrate 5220. Some of the particles 5203 are small in mass and can be removed by a vacuum pump or other device. It may be discharged to the

[0329] Next, regarding the deposition of pellets 5200 and particles 5203 on the surface of the substrate 5220, This will be explained using Figure 46.

[0330] First, the first pellet 5200 is deposited on the substrate 5220. The pellet 5200 is flat. Therefore, the flat surface is deposited facing the surface of the substrate 5220 (see FIG. 46(A)). At this time, the charge on the surface of the pellet 5200 facing the substrate 5220 is released through the substrate 5220. do.

[0331] Next, the second pellet 5200 reaches the substrate 5220. The surface of the first pellet 5200 and the surface of the second pellet 5200 are electrically charged, A repulsive force is generated between the two (see Figure 46(B)).

[0332] As a result, the second pellet 5200 avoids the first pellet 5200 and falls on the substrate 52 The particles are deposited at a location slightly away from the surface of 20 (see Figure 46(C)). By repeating this process, Countless pellets 5200 are deposited on the surface of the substrate 5220 to a thickness equivalent to one layer. Between the pellets 5200, there is a pile of pellets 5200. There will be areas where there is no

[0333] Next, the particles 5203 reach the surface of the substrate 5220 (see FIG. 46(D)).

[0334] Particles 5203 cannot deposit in active areas such as the surface of pellet 5200. Therefore, the pellets 5200 are deposited so as to fill in the areas where the pellets 5200 are not deposited. Lateral growth of particles 5203 between pellets 5200 In this way, the pellets 5200 are connected to each other. Particles 5203 are deposited until they fill the area. This mechanism is the same as the deposition mechanism of the ALD method. Similar to MU.

[0335] There are several possible mechanisms for the lateral growth of particles 5203 between pellets 5200. For example, as shown in FIG. 46(E), the first M-Zn-O layer is connected to the side surface. In this case, after the first M-Zn-O layer is formed, the In-O layer The first M-Zn-O layer is then connected layer by layer (first mechanism).

[0336] Alternatively, for example, as shown in FIG. 47(A), first, one side of the first M-Zn-O layer is Next, as shown in FIG. 47(B), one of the In-O layer is bonded to the surface of the In-O particle 5203. Next, as shown in Figure 47(C), one particle 5203 is bonded to the second layer MZ In some cases, the nO layers are connected by bonding one particle 5203 to one side of the nO layer (second (Mechanism of the above) In addition, Figure 47(A), Figure 47(B) and Figure 47(C) occur simultaneously. In some cases, they can be linked by connecting the two (third mechanism).

[0337] As shown above, the mechanism of lateral growth of particles 5203 between pellets 5200 However, there are other mechanisms that may cause Pellet to There is also a possibility that particles 5203 may grow laterally between the particles 5200.

[0338] Therefore, even if multiple pellets 5200 are facing in different directions, multiple The particles 5203 grow laterally and fill the gaps between the pellets 5200, forming a crystal grain. In addition, the particles 5203 smoothly connect the pellets 5200. The resulting crystal structure is different from both single crystal and polycrystal. A crystalline structure having distortion between the uniform crystalline regions (pellets 5200) is formed. The regions filling the gaps between the crystalline regions are distorted crystalline regions, and are therefore referred to as amorphous structures. It is considered inappropriate to

[0339] When the particles 5203 have filled the gaps between the pellets 5200, the thickness of the gap is approximately the same as that of the pellets 5200. A new first pellet 5200 is piled up on the first layer. Then, a second layer is formed. This process is repeated to form a laminate. A thin film structure having the above structure is formed (see FIG. 44(D)).

[0340] The deposition of the pellets 5200 also varies depending on the surface temperature of the substrate 5220. For example, if the surface temperature of the substrate 5220 is high, the pellet 5200 may adhere to the surface of the substrate 5220. As a result, the pellet 5200 and another pellet 5200 The proportion of connections not via particles 5203 increases, resulting in highly oriented CAAC-OS. The surface temperature of the substrate 5220 during the CAAC-OS film formation is 100° C. or higher and 500° C. or lower. less than 140°C and less than 450°C, preferably 170°C and less than 400°C Therefore, even if a large-area substrate of the 8th generation or later is used as the substrate 5220, It can be seen that almost no warping occurs.

[0341] On the other hand, when the surface temperature of the substrate 5220 is low, the pellet 5200 is microscopically attached to the surface of the substrate 5220. As a result, pellets 5200 pile up on top of each other. Low-oriented nc-OS (nanocrystalline oxide semiconductor) In nc-OS, pellet 5200 is the negative The pellets 5200 may accumulate at regular intervals due to their charge. Therefore, although the orientation is low, the amorphous oxide semiconductor has a slight regularity. It has a denser structure than a conductor.

[0342] In addition, in CAAC-OS, the gaps between pellets are extremely small, so that one Large pellets may be formed. The interior of one large pellet has a single crystal structure. For example, if the pellet size is 10 nm or more and 200 nm or less when viewed from the top, It may be m or more and 100 nm or less, or 20 nm or more and 50 nm or less.

[0343] Based on the above model, it is assumed that the pellets 5200 are deposited on the surface of the substrate 5220. CAAC-OS can be deposited even on surfaces that do not have a crystalline structure. This indicates that the growth mechanism is different from epitaxial growth. AAC-OS and nc-OS can form uniform films even on large glass substrates. For example, if the structure of the surface (surface to be formed) of the substrate 5220 is an amorphous structure (for example, an amorphous oxide), It is possible to form a CAAC-OS film even on silicon dioxide.

[0344] In addition, even if the surface of the substrate 5220 on which the film is to be formed is uneven, the pellets can be formed along the shape of the uneven surface. It can be seen that 5200 bits are arranged.

[0345] (Embodiment 9) <module> A display module to which the semiconductor device of one embodiment of the present invention is applied will be described below with reference to FIG. 49. Explanations will be given.

[0346] The display module 8000 shown in FIG. 49 is made up of an upper cover 8001 and a lower cover 8002. In between, the touch sensor 8004 connected to FPC8003 and the touch sensor 8005 connected to FPC8005 Display device 8006, backlight unit 8007, frame 8009, printed circuit board 8 8010 and a battery 8011. The touch sensor 8004 may not be included.

[0347] The semiconductor device of one embodiment of the present invention can be used for the display device 8006, for example.

[0348] The upper cover 8001 and the lower cover 8002 are connected to a touch sensor 8004 and a display device. The shape and dimensions can be changed as needed to fit the size of the 8006.

[0349] The touch sensor 8004 is a resistive or capacitive touch panel that is connected to the display device 80. 8006. It is also possible to provide a touch panel function. It is also possible to provide an optical sensor in each pixel to create an optical touch panel. A touch sensor electrode is provided in each pixel of the display device 8006 to form a capacitive touch panel. It is also possible.

[0350] The backlight unit 8007 includes a light source 8008. It may be provided at the end of the unit 8007 and configured to use a light diffusion plate.

[0351] The frame 8009 has a function of protecting the display device 8006 and also a function of preventing the operation of the printed circuit board 8010. It may also have a function as an electromagnetic shield to block electromagnetic waves generated by the The frame 8009 may also function as a heat sink.

[0352] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal, and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. In this case, the battery 8011 may not be required.

[0353] In addition, the display module 8000 includes components such as a polarizing plate, a retardation plate, and a prism sheet. It may also be provided in addition.

[0354] (Embodiment 10)

[0355] <Electronic equipment> In this embodiment, one of electronic devices to which the display device of one embodiment of the present invention can be applied will be described. An example will be described with reference to FIGS. 50 and 51.

[0356] As an electronic device to which a display device is applied, for example, a television device (television or television (also called television receivers), computer monitors, digital cameras, digital video Cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), mobile phones These include portable game machines, mobile information terminals, sound reproduction devices, and large game machines such as pachinko machines. Specific examples of these electronic devices are shown in Figures 50 and 51.

[0357] FIG. 50A shows a portable game machine, which includes a housing 7101, a housing 7102, a display portion 7103, Display unit 7104, microphone 7105, speaker 7106, operation keys 7107, stylus The display device according to one embodiment of the present invention includes the display portion 7103 or the display portion 7108. 104. The display portion 7103 or the display portion 7104 can be used in accordance with one embodiment of the present invention. By using such a display device, it is possible to provide a mobile phone that is excellent in usability for the user and is less susceptible to deterioration in quality. It is possible to provide a portable game machine. The portable game machine shown in FIG. The display unit 7103 and the display unit 7104 are included in the portable game machine. The number is not limited to this.

[0358] FIG. 50B shows a smartwatch, which includes a housing 7302, a display unit 7304, and operation buttons. 7311, 7312, a connection terminal 7313, a band 7321, a clasp 7322, etc. The display device or the touch panel according to one embodiment of the present invention can be used for the display portion 7304. Cut.

[0359] FIG. 50C shows a portable information terminal, which includes a display portion 7502 incorporated in a housing 7501. , operation button 7503, external connection port 7504, speaker 7505, microphone 7506 The display device according to one embodiment of the present invention can be used for the display portion 7502. Note that the display portion 7502 can have very high resolution, so it can be used in any size. It is possible to display 8K images, resulting in extremely clear images.

[0360] FIG. 50D shows a video camera, which includes a first housing 7701, a second housing 7702, and a display unit 77 03, operation keys 7704, a lens 7705, a connection part 7706, etc. The lens 7705 and the display unit 7703 are provided in the first housing 7701. The first housing 7701 and the second housing 7702 are connected to each other. The first housing 7701 and the second housing 7702 are connected by a portion 7706, and the angle between the first housing 7701 and the second housing 7702 is The image on the display unit 7703 can be changed by the connection unit 7706. 6, and a configuration in which the switching is performed according to the angle between the first housing 7701 and the second housing 7702. The imaging device of one embodiment of the present invention may be provided at the focal point of the lens 7705. The display device according to one embodiment of the present invention can be used for the display portion 7703.

[0361] FIG. 50(E) shows a curved display, which is a display unit 7802 incorporated in a housing 7801. In addition, the device is provided with an operation button 7803, a speaker 7804, and the like. Such a display device can be used for the display portion 7802.

[0362] FIG. 50(F) shows a digital signage system, which is a display unit 7922 installed on a utility pole 7921. The display device according to one embodiment of the present invention can be used for the display portion 7922. .

[0363] FIG. 51(A) shows a notebook personal computer, which includes a housing 8121 and a display unit 8122. , a keyboard 8123, a pointing device 8124, etc. Such a display device can be applied to the display portion 8122. Note that the display portion 8122 is Because it can always maintain high resolution, it can display 8K even in a small to medium size. A very clear image can be obtained.

[0364] FIG. 51(B) shows the exterior of the car 9700. FIG. 51(C) shows the driver's seat of the car 9700. The automobile 9700 includes a body 9701, wheels 9702, a dashboard 9703, a light fixture, and a The display device or the input / output device of one embodiment of the present invention includes a car 970 For example, the display units 9710 to 9711 shown in FIG. The display device, the input / output device, or the touch panel of one embodiment of the present invention is provided in the display portion 9715. It is possible.

[0365] The display portion 9710 and the display portion 9711 are display devices provided on a windshield of an automobile, The display device or the input / output device of one embodiment of the present invention is a display device or By forming the electrodes of the input / output device using a light-transmitting conductive material, A so-called see-through display device or input / output device that allows the opposite side to be seen through. If it is a see-through display device or an input / output device, the operation of the car 9700 can be Therefore, the display device or input / output device according to one embodiment of the present invention can be used without obstructing the view even when the display device is turned on. The power device can be installed on the windshield of the automobile 9700. or an input / output device, a display device, or a transistor for driving the input / output device, etc. In this case, organic transistors using organic semiconductor materials and transistors using oxide semiconductors are used. A light-transmitting transistor such as a light-transmitting transistor may be used.

[0366] The display unit 9712 is a display device provided in a pillar part. By displaying an image from the imaging means on the display unit 9712, the view blocked by the pillars can be compensated for. The display unit 9713 is a display device provided in the dashboard. For example, an image captured by an imaging means provided on the vehicle body is displayed on the display unit 9713. This allows the driver to compensate for the obstructed view of the dashboard. By projecting images from the installed imaging means, blind spots can be compensated for and safety can be improved. In addition, by projecting images that complement the invisible parts, it is possible to make the sense of incongruity appear more natural. Safety checks can be performed without any need for manual intervention.

[0367] Also, Figure 51(D) shows the interior of a car with bench seats for the driver and passenger seats. The display unit 9721 is a display device or an input / output device provided in the door. For example, an image captured by an imaging means provided on the vehicle body is displayed on the display unit 9721, The display unit 9722 can complement the view blocked by the handle. The display unit 9723 is a display device provided in the center of the seat surface of the bench seat. The display device is installed on the seat or backrest, and the display device is The heat generated by the display device can also be used as a seat heater.

[0368] The display unit 9714, the display unit 9715, or the display unit 9722 displays navigation information, odometer, tachometer, mileage, fuel level, gear status, air conditioning settings, etc. It is possible to provide various information. In addition, it is possible to change the display items and layout displayed on the display unit. The above information can be displayed on the display unit 9. 710 to 9713, 9721, and 9723. In addition, the display units 9710 to 9715 and the display units 9721 to 9723 are illuminated. The display units 9710 to 9715 and the display unit The display portions 9721 to 9723 can also be used as a heating device.

[0369] The display unit to which the display device of one embodiment of the present invention is applied may be flat. The display device of this embodiment may not have a curved surface or flexibility.

[0370] Note that the structures and methods described in this embodiment may be different from the structures and methods described in other embodiments. can be used in appropriate combination. [Example]

[0371] In this example, Ca was used to evaluate the moisture barrier properties of the protective film 23 according to one embodiment of the present invention. We conducted a test and will explain the results.

[0372] The sample was prepared by vacuum-depositing calcium onto a glass substrate to a thickness of 80 nm, and then The adhesive for the Drop Fill is applied to the glass substrate, and the glass substrate is bonded to another glass substrate in a vacuum. The adhesive was then allowed to harden. At this point, the bonded width was approximately 1 mm. A protective film 23 was formed to prepare a sample.

[0373] The protective film 23 was formed by depositing an aluminum oxide film by the ALD method. MA (Trimethyl Aluminum) and ozone are used in thermal ALD. An aluminum oxide film was then formed to a thickness of 100 nm.

[0374] Figure 52 shows the Ca test measurement results with and without a protective film formed by the ALD method. The vertical axis represents the light transmittance at 60℃ and 90% humidity. The higher the light transmittance, the more moisture there is. Indicates penetration.

[0375] FIG. 52 shows that when there is no protective film 23, the light transmittance tends to increase due to moisture penetration. On the other hand, in the sample having the protective film 23 formed by the ALD method according to one embodiment of the present invention, Therefore, by carrying out one aspect of the present invention, it is possible to This has the effect of suppressing invasion. [Example]

[0376] In this example, a test cell in which a liquid crystal is sealed and in which a protective film 23 according to one embodiment of the present invention is formed is used. The voltage holding ratio characteristics were evaluated using the following method. The results are described below.

[0377] Table 1 shows an overview of the test cell, and Table 2 shows the measurement conditions.

[0378] [Table 1]

[0379] [Table 2]

[0380] The test cell has a structure in which liquid crystal is sandwiched between transparent electrodes (ITO electrodes), and is an ODF printer. After that, an aluminum oxide film was formed as a protective film 23. The aluminum film was formed by thermal ALD using TMA and ozone as precursors. The temperature was set at 80°C by the method. The thickness of the aluminum oxide film was 70 nm and 110 nm. In addition, evaluation was carried out using two types of liquid crystal: a positive type and a negative type.

[0381] FIG. 53 shows a sample in which a protective film 23 according to one embodiment of the present invention is formed and a positive liquid crystal is used as the liquid crystal. The voltage holding ratio measurement results of the negative type liquid crystal when one embodiment of the present invention is used are shown in FIG. The graph shows the results of voltage retention measurement. The horizontal axis shows the storage time at 60°C and 90% humidity, and the vertical axis shows the voltage retention rate. show.

[0382] 53 and 54, by having the protective film 23, which is one aspect of the present invention, the positive type liquid crystal, Negative type liquid crystal, both liquid crystals have remained unchanged since the start of the storage test. It can be seen that the long-term reliability of the voltage holding ratio is improved. The same effect was obtained at both 100 nm and 110 nm. By providing the protective film 23 in this manner, it becomes possible to hold the voltage more stably, and the writing It is possible to improve operational reliability even when driving with a reduced number of writes. [Example]

[0383] In this example, a display device using a liquid crystal element according to one embodiment of the present invention was manufactured. The display results of the position will be explained below.

[0384] Table 3 shows the specifications of the display device using the liquid crystal element. The display device is a high-definition liquid crystal panel. be.

[0385] [Table 3]

[0386] For the display device, an aluminum oxide film is formed as a protective film 23 by the ALD method. The precursors were TMA (Trimethyl Aluminum) and ozone. Using this, an aluminum oxide film was formed to a thickness of approximately 100 nm at 80°C by thermal ALD.

[0387] Figure 55 shows the display results of a display device manufactured using one embodiment of the present invention. As shown in FIG. 55, the side and peripheral portions are sealed using the protective film 23 formed by the ALD method. By preventing this, it is possible to produce a display device that has high display quality and high reliability even with a narrow frame. can be obtained. [Example]

[0388] In this example, the side surface of the display panel 20 used in Example 3 was observed using a scanning electron microscope (S Cross-sectional observation using a scanning electron microscope (SEM), and Energy Dispersive X-ray Spectroscopy The results of elemental mapping analysis using EDX (Energy Dispersion X-ray spectroscopy) I will explain.

[0389] For SEM observation, Hitachi High-Technologies Corporation's SU8030 was used. For EDX analysis, The side of the board was made of resin 37 56(A) is a schematic cross-sectional view of the observed display panel 20. For ease of explanation, transistors, capacitor elements, insulating layers, conductive layers, etc. The regions where the ions are formed are shown as regions 15 and 16. The observation regions are shown in FIG. The region 17 is the region 17. A schematic diagram of the region 17 is shown in FIG. 56(B). The region 17 is formed by the substrate 100, Substrate 300, insulating layer 131, insulating layer 180, protective film 23, insulating layer 330, conductive layer 380, It has an adhesive layer 370 and a resin 378 .

[0390] Figure 57(A) shows a cross-sectional SEM photograph of region 17, and Figure 57(B) shows the EDX image of aluminum. The results of the mapping analysis of oxygen by EDX are shown in FIG. 57(C).

[0391] As shown in FIG. 57(A), the region 17 includes the substrate 100, the insulating layer 131, the insulating layer 180, the adhesive layer 37, and the like. 57(B) and 57(C) show that the resin 378 and the conductive layer 380 are included. From (C), aluminum and oxygen are connected to the side surface of the display device. The protective film 23 formed by the ALD method is detected along the deposition layer 370 and the insulating layer 180. It can be seen that the aluminum oxide film is uniformly formed.

[0392] In addition, the upper and lower parts of region 17 were magnified and cross-sectional SEM observation was performed. Further EDX analysis was performed. Figure 58(A) shows an SEM photograph of the upper part of region 17, and Figure 58(B) shows ) shows the results of EDX mapping analysis of aluminum in the upper part of region 17, and Fig. 58(C) shows the results of EDX analysis of aluminum in the upper part of region 17. The cross-sectional SEM observation result of the lower part of the region 17 is shown.

[0393] 58(A) and 58(B), the insulating layer 330, the adhesive layer 370, the resin 378, the conductive layer 3 In addition to 80, the presence of aluminum can be confirmed, and the aluminum oxide film, which is the protective film 23, is attached. The adhesive layer 370 and the conductive layer 380 are formed uniformly on the side surface of the display device. 58(C), the aluminum oxide protective film 23 is also formed in the lower region. It can be seen that the silicon film is formed uniformly.

[0394] From the above, Fig. 57(A), Fig. 57(B), Fig. 57(C), Fig. 58(A), Fig. 58(B), FIG. 58(C) reflects the configuration of FIG. 56(B), and it is confirmed that the present invention can be implemented. It has been confirmed that a display device using one embodiment of the present invention can improve barrier properties and reduce the frame. Even if the size is reduced, reliability can be improved. [Example]

[0395] In this example, the results of evaluating the impurity concentration contained in the protective film 23 will be described. .

[0396] The impurity concentration was evaluated by secondary ion mass spectrometry (Secondary Ion Mass Spectrometry). The analysis was performed using SIMS (Simulation Integrator Mass Spectrometry), and the analytical equipment was an ULVAC-PHI The dynamic SIMS instrument PHI ADEPT-1010 was used. The sample for analysis was A thermal oxide film is formed on the silicon wafer by hydrochloric acid oxidation, and a protective film 23 is formed on the thermal oxide film. Aluminum oxide (AlOx) films formed by ALD method, which can be used as The aluminum oxide film was formed by sputtering or by depositing an aluminum oxide film.

[0397] Figure 59 shows the results of SIMS analysis of hydrogen, carbon, and fluorine in the aluminum oxide film.

[0398] As shown in Figure 59, the aluminum oxide film formed by the ALD method has a hydrogen concentration of 1×10 21 a toms / cm 3 carbon concentration is about 1×10 20 atoms / cm 3 degree, fluoride concentration 1×10 20 atoms / cm 3 In addition, the sputtering method The aluminum oxide film formed by the method has different element concentrations, It can be seen that this is caused by the difference in the thickness of the aluminum oxide film formed by the ALD method. The impurity concentration can be further reduced, and the reliability of the display device can be further improved. This can be done. [Example]

[0399] In this example, the results of measuring the light transmittance after a high-temperature, high-humidity storage test will be described.

[0400] The sample was fabricated with the same specifications as the liquid crystal display shown in Example 3, and was fabricated by the ALD method. The specimens with and without an aluminum oxide film were compared. These samples were subjected to a high temperature and humidity storage test at 60°C and 90% humidity. Then, the idle stop (IDS) drive was performed at a frame frequency of 0.1 Hz. The light transmittance was measured when the sample was heated. The measurement point was 5 mm inside from the edge of the sample (Figure 60). A)). In addition, during the measurement, the halftone (gray) area is the area where the difference in light transmittance is most likely to occur before and after rewriting. ) was displayed (see Figure 61).

[0401] In addition, Idling Stop (IDS) operation is performed after the data writing process is completed. As shown in Figure 60(B), in the conventional In the case of the driving method shown in Figure 60(C), rewriting is required about 60 times per second. By using S drive, the number of rewrites can be reduced, reducing power consumption. can be done.

[0402] Figure 62 shows the measurement results of light transmittance at various times after storage in a 60°C, 90% RH environment. In Figure 62, the difference in light transmittance is converted into a difference in gradation. Aluminum oxide film The sample with the film formed (Fig. 62(A)) has a gradation difference of about 4 gradations before and after writing. On the other hand, the sample without the aluminum oxide film (Fig. 62(B)) has a gradation difference of about 13 gradations. This resulted in great results.

[0403] Therefore, by using the present invention, it is possible to suppress the change in gray scale, and the liquid crystal display This can improve the long-term reliability of the device. [Example]

[0404] In this example, the temperature during the formation of the aluminum oxide film formed by the ALD method was changed and each evaluation was performed. The results of this will be explained.

[0405] <Aluminum oxide film density> The aluminum oxide film density measurement sample was prepared by oxidizing a silicon wafer using the ALD method. An aluminum film was formed to a thickness of 100 nm. The temperature for forming the aluminum oxide film was 80°C. The temperatures used were 100° C. and 120° C. The precursors were the same as those in Example 3.

[0406] The density of the aluminum oxide film was measured using X-ray reflectivity. The TRXV-SMX manufactured by Technos was used.

[0407] Figure 63 shows the density of the aluminum oxide film formed at each temperature. The higher the value, the higher the density tends to be.

[0408] <Water permeability of aluminum oxide film> Using the aluminum oxide film formed by the above method, a Ca test measurement similar to that in Example 1 was performed. The measurement results are shown in Figure 64. The horizontal axis represents the storage time at 60°C and 90% humidity, and the vertical axis represents the storage time at 60°C and 90% humidity. This is light transmittance. The higher the light transmittance, the more moisture has penetrated.

[0409] As can be seen from Figure 64, the samples with film deposition temperatures of 80°C and 100°C each have low light transmittance. In addition, the sample with a film deposition temperature of 100°C exhibited low light transmittance. In other words, the aluminum oxide film, which is the protective film, is easily resistant to moisture. It can be said that it acts as a barrier to the penetration of

[0410] As described above, by using one embodiment of the present invention, a highly reliable display device can be provided. can. [Explanation of symbols]

[0411] 10 Display device 11 areas 12 areas 13 areas 14 areas 15 areas 16 areas 17 areas 18 Light blocking layer 20 Display panel 21 Display area 22 Peripheral circuits 23 Protective film 24 pixels 30 Groove 42 FPC 50 transistors 51 Transistor 52 transistors 53 Transistor 54 transistors 55 transistors 60 Capacitor element 61 Capacitor element 62 Capacitor element 63 Capacitor element 70 Light-emitting element 80 Liquid crystal element 81 Liquid crystal element 90 Input Devices 91 source line 92 gate lines 100 boards 101 Substrate 103 Polarizing Plate 104 Backlight 105 Protection Board 110 Insulating layer 112 Insulating layer 120 Conductive layer 130 Insulating layer 131 Insulating layer 140 Semiconductor layer 141 Oxide semiconductor layer 142 Oxide semiconductor layer 143 Oxide semiconductor layer 150 conductive layer 160 Conductive layer 165 Insulating Layer 170 Insulating Layer 180 insulating layer 181 Insulating layer 182 Insulating layer 190 Conductive Layer 200 conductive layer 210 Insulating layer 220 Conductive layer 230 layers 240 Spacer 245 Bulkhead 250 EL layer 260 Conductive Layer 300 boards 301 Substrate 302 Protection Board 303 Polarizing Plate 304 Scattering Film 312 Insulating layer 330 Insulating layer 360 colored layer 370 Adhesive layer 371 Adhesive layer 372 Adhesive layer 373 Adhesive layer 374 Adhesive layer 375 Adhesive layer 376 Adhesive layer 377 Adhesive layer 378 Resin 380 Conductive Layer 390 Liquid Crystal Layer 400 conductive layer 410 Conductive layer 420 Insulation Layer 430 Conductive layer 440 Insulation Layer 510 Anisotropic conductive film 520 Conductive layer 530 Opening 601 Precursor 602 Precursor 700 boards 701 Pixel section 702 Scanning line driving circuit 703 Scanning line driving circuit 704 Signal Line Driver Circuit 710 Capacitance wiring 712 Gate wiring 713 Gate wiring 714 data line 716 Transistor 717 Transistor 718 Liquid Crystal Devices 719 Liquid Crystal Devices 720 pixels 721 Switching Transistor 722 Drive transistor 723 Capacitor 724 Light-emitting element 725 signal line 726 scan lines 727 Power line 728 Common electrode 800 boards 810 entrance 820 Inside the chamber 830 Plasma Source 930 board 931 Electrode 932 Electrode 933 Electrode 934 Bridge Electrode 936 Electrode 937 Electrode 938 Intersection 941 Wiring 942 Wiring 950 FPC 951 IC 1700 boards 1701 Chamber 1702 Road Room 1703 Processing Room 1704 Chamber 1705 Chamber 1706 Unloading Room 1711a Raw material supply section 1711b Raw material supply section 1712a High Speed ​​Valve 1712b High Speed ​​Valve 1713a Raw material inlet 1713b Raw material inlet 1714 Raw material discharge port 1715 Exhaust system 1716 PCB holder 1720 Transport Room 3501 Wiring 3502 Wiring 3503 Transistor 3504 Liquid crystal elements 3510 Wiring 3510_1 Wiring 3510_2 Wiring 3511 Wiring 3515_1 Block 3515_2 Block 3516 blocks 5200 pellets 5201 AEON 5203 particles 5220 board 5230 Target 5240 Plasma 5260 Heating mechanism 7101 Housing 7102 Housing 7103 Display section 7104 Display section 7105 Microphone 7106 Speaker 7107 Operation key 7108 Stylus 7302 Housing 7304 Display section 7311 Operation button 7312 Operation button 7313 Connection terminal 7321 Band 7322 Gold 7501 Case 7502 Display section 7503 Operation button 7504 External connection port 7505 Speaker 7506 Microphone 7701 Housing 7702 Case 7703 Display section 7704 Operation key 7705 Lens 7706 Connection 7801 Case 7802 Display section 7803 Operation button 7804 Speaker 7921 Electric pole 7922 Display section 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Sensor 8005 FPC 8006 Display device 8007 Backlight Unit 8008 light source 8009 Frame 8010 Printed Circuit Board 8011 Battery 8121 Housing 8122 Display section 8123 keyboard 8124 pointing device 9700 Automobiles 9701 Body 9702 wheels 9703 Dashboard 9704 Light 9710 Display section 9711 Display section 9712 Display section 9713 Display section 9714 Display section 9715 Display section 9721 Display section 9722 Display section 9723 Display section

Claims

1. a first substrate; a pixel portion provided on the first substrate and having at least a first transistor; a drive circuit provided on the first substrate and having at least a second transistor; A display device having a region located above the pixel portion and a region located above the driver circuit, a first conductive layer located on the first substrate and functioning as a gate electrode of the first transistor; a second conductive layer located on the first substrate and functioning as a gate electrode of the second transistor; a first insulating layer having a region located above the first conductive layer and a region located above the second conductive layer, the first insulating layer comprising nitrogen and silicon; a second insulating layer having a region located above the first conductive layer with the first insulating layer interposed therebetween and a region located above the second conductive layer with the first insulating layer interposed therebetween, the second insulating layer including oxygen and silicon; a first oxide semiconductor layer having a region located above the second insulating layer and including a channel formation region of the first transistor; a second oxide semiconductor layer having a region located above the second insulating layer and including a channel formation region of the second transistor; a third insulating layer having a region in contact with a top surface of the first oxide semiconductor layer and a region in contact with a top surface of the second oxide semiconductor layer, the third insulating layer containing oxygen and silicon; a fourth insulating layer including a region overlapping with the first oxide semiconductor layer with the third insulating layer interposed therebetween and a region overlapping with the second oxide semiconductor layer with the third insulating layer interposed therebetween, and including nitrogen and silicon; a fifth insulating layer having a region located above the fourth insulating layer and comprising an organic material; a third conductive layer having a region located above the fifth insulating layer and electrically connected to the first transistor; the third conductive layer functions as a pixel electrode, the first oxide semiconductor layer has a region overlapping with the first insulating layer, the second oxide semiconductor layer has a region overlapping with the first insulating layer, in a region between one end of the first substrate and the drive circuit, the fourth insulating layer has a region that protrudes toward one side of the end of the first substrate beyond an end of the fifth insulating layer, a display device, wherein in a region between one of the ends of the first substrate and the driving circuit, the first insulating layer has a region that protrudes toward one side of the end of the first substrate further than each of the ends of the second insulating layer, the end of the third insulating layer, the end of the fourth insulating layer, and the end of the fifth insulating layer, and the film thickness of the first insulating layer in this region is smaller than the film thickness of the first insulating layer in a region that overlaps with the second oxide semiconductor layer.

2. a first substrate; a pixel portion provided on the first substrate and having at least a first transistor; a drive circuit provided on the first substrate and having at least a second transistor; A display device having a region located above the pixel portion and a region located above the driver circuit, a first conductive layer located on the first substrate and functioning as a gate electrode of the first transistor; a second conductive layer located on the first substrate and functioning as a gate electrode of the second transistor; a first insulating layer having a region located above the first conductive layer and a region located above the second conductive layer, the first insulating layer comprising nitrogen and silicon; a second insulating layer having a region located above the first conductive layer with the first insulating layer interposed therebetween and a region located above the second conductive layer with the first insulating layer interposed therebetween, the second insulating layer including oxygen and silicon; a first oxide semiconductor layer having a region located above the second insulating layer and including a channel formation region of the first transistor; a second oxide semiconductor layer having a region located above the second insulating layer and including a channel formation region of the second transistor; a third insulating layer having a region in contact with a top surface of the first oxide semiconductor layer and a region in contact with a top surface of the second oxide semiconductor layer, the third insulating layer containing oxygen and silicon; a fourth insulating layer including a region overlapping with the first oxide semiconductor layer with the third insulating layer interposed therebetween and a region overlapping with the second oxide semiconductor layer with the third insulating layer interposed therebetween, and including nitrogen and silicon; a fifth insulating layer having a region located above the fourth insulating layer and comprising an organic material; a third conductive layer having a region located above the fifth insulating layer and electrically connected to the first transistor; a sixth insulating layer located above the fifth insulating layer; the third conductive layer functions as a pixel electrode, the first oxide semiconductor layer has a region overlapping with the first insulating layer, the second oxide semiconductor layer has a region overlapping with the first insulating layer, in a region between one end of the first substrate and the drive circuit, the fourth insulating layer has a region that protrudes toward one side of the end of the first substrate beyond an end of the fifth insulating layer, In a region between one of the ends of the first substrate and the drive circuit, the sixth insulating layer has a region in contact with an upper surface of the fifth insulating layer, a region in contact with a side surface of the fifth insulating layer, a region in contact with an upper surface of the fourth insulating layer, a region in contact with a side surface of the fourth insulating layer, a region in contact with a side surface of the third insulating layer, a region in contact with a side surface of the second insulating layer, and a region in contact with an upper surface of the first insulating layer; a thickness of the first insulating layer in a region where an upper surface of the first insulating layer is in contact with the sixth insulating layer is smaller than a thickness of the first insulating layer in a region where the first insulating layer overlaps with the second oxide semiconductor layer.

3. In claim 1 or 2, A display device comprising a liquid crystal layer having a region located above the third conductive layer.

Images