Image sensor

Abstract

To improve infrared-ray reception efficiency of an image sensor.SOLUTION: An image sensor 10 includes: a photodiode which is formed in a pixel PX of a substrate 120; a lens part 150 which is inserted and arranged in the pixel PX of the substrate 120; a first reflection part 140 which is arranged in a separate region NPX of the substrate 120 to be located in the substrate 120; and a light focusing pattern 200 which is arranged on the substrate 120.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present specification relates to an image sensor. [Background technology]

[0002] With the development of the information and communications industry and the digitalization of electronic devices, image sensors with improved performance are being used in various fields, such as digital cameras, video cameras, mobile phones, personal communication systems (PCS), game consoles, security cameras, and medical microcameras. Generally, an image sensor has a pixel region including a photodiode and a peripheral circuit region. A unit pixel includes a photodiode and a transfer transistor. The transfer transistor is disposed between the photodiode and a floating diffusion region and transfers charges generated in the photodiode to the floating diffusion region.

[0003] On the other hand, the image sensor may include an infrared image sensor that receives infrared (IR) light. In the case of an infrared image sensor, it is preferable that the sensor does not receive light in the visible light wavelength band but receives light in the infrared wavelength band. Summary of the Invention [Problem to be solved by the invention]

[0004] The problem to be solved by this specification is to provide an image sensor that can efficiently receive light in the infrared wavelength band.

[0005] Another problem to be solved by the present specification is to provide an improved image sensor that reflects and does not receive light in the visible light wavelength range.

[0006] The problems of this specification are not limited to those described above, and other technical problems can be inferred from the following embodiments. [Means for solving the problem]

[0007] An image sensor according to one embodiment for solving the above problem includes a photodiode formed within a pixel of a substrate, a lens portion inserted and arranged within the pixel of the substrate, a first reflecting portion arranged in an isolation region of the substrate and located within the substrate, and a light-collecting pattern arranged on the substrate.

[0008] The lens portion may be inserted inward from the upper surface of the substrate.

[0009] The lens portion may include a metalens, and the lens portion may include a plurality of nanopatterns.

[0010] The first reflecting portion may be inserted inward from the upper surface of the substrate.

[0011] The light-collecting device may further include an insulating layer between the substrate and the light-collecting pattern.

[0012] The light-collecting device may further include a second reflecting portion disposed in the separation region between the substrate and the light-collecting pattern.

[0013] The refractive index of the lens portion may be smaller than the refractive index of the light-collecting pattern and the refractive index of the substrate.

[0014] The refractive index of the lens portion may be smaller than the refractive index of the substrate by 1 or more.

[0015] The refractive index of the lens portion may be 1.4 to 1.6.

[0016] The refractive index of the first reflecting portion may be smaller than the refractive index of the light-collecting pattern and the refractive index of the substrate.

[0017] The refractive index of the first reflecting portion may be 1.2 to 1.6.

[0018] The thickness of the first reflecting portion may be 1.5 times or more the thickness of the nanopattern of the lens portion.

[0019] The thickness of the nanopattern of the lens portion may be 0.5 to 8 times the width of the pixel.

[0020] The length from the lower surface of the substrate to the lower end of the nanopattern of the lens portion may be 1 to 8 times the width of the pixel.

[0021] An image sensor according to another embodiment for solving the above problem includes a photodiode formed in a pixel of a substrate, a lens portion inserted and arranged in the pixel of the substrate, a first reflecting portion arranged in an isolation region of the substrate and positioned within the substrate, a light-collecting pattern arranged on the substrate, and a color filter layer between the substrate and the light-collecting pattern, wherein the color filter layer transmits light in the infrared wavelength range.

[0022] The color filter layer may not transmit light in the visible wavelength range.

[0023] The lens portion may be inserted inward from the upper surface of the substrate.

[0024] The lens portion may include a metalens, and the lens portion may include a plurality of nanopatterns.

[0025] The metalens may scatter light in the infrared wavelength range, and the first reflecting portion may reflect light in the infrared wavelength range that is incident on the substrate.

[0026] The metalens may not transmit light in the visible wavelength range. [Effects of the Invention]

[0027] According to the embodiment, by inserting a metalens into the light receiving section, the number of paths of infrared light in the light receiving section of the unit pixel can be increased, thereby improving the infrared light receiving efficiency of each unit pixel.

[0028] In addition, the metalens can reduce the light receiving rate of light in wavelength bands other than infrared light at a unit pixel, thereby improving the light receiving efficiency of the infrared image sensor.

[0029] However, the effects obtained in this specification are not limited to those described above, and other effects not mentioned will be clearly understood by those having ordinary skill in the art to which this specification pertains from the following description. [Brief explanation of the drawings]

[0030] [Figure 1] FIG. 1 is a block diagram illustrating an image sensor according to an embodiment. [Figure 2] FIG. 1 is a cross-sectional view of an image sensor according to an embodiment. [Figure 3] FIG. 2 is a schematic diagram illustrating a path of a first light in an image sensor according to an embodiment. [Figure 4] FIG. 4 is a schematic diagram illustrating a path of a second light in an image sensor according to an embodiment. [Figure 5] FIG. 2 is a plan view showing the arrangement of lens units of an image sensor according to an embodiment. [Figure 6] FIG. 10 is a plan view showing the arrangement of lens units of an image sensor according to another embodiment. [Figure 7] FIG. 10 is a plan view showing the arrangement of lens portions of an image sensor according to yet another embodiment. [Figure 8] FIG. 10 is a cross-sectional view of an image sensor according to yet another embodiment. [Figure 9] FIG. 10 is a cross-sectional view of an image sensor according to yet another embodiment. [Figure 10] 1 is a diagram illustrating a schematic diagram of an electronic device having an image sensor according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0031] The advantages and features, as well as the methods for achieving them, will become apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be realized in various different forms. The present embodiments are provided merely to complete the disclosure and to allow those skilled in the art to fully understand the scope of the invention. The present invention is defined only by the claims.

[0032] The terms used in this specification are for the purpose of describing embodiments and are not intended to limit the present invention. In this specification, the singular forms "a," "an," and "the" include the plural forms unless the context clearly dictates otherwise. As used in this specification, the terms "comprises" and / or "comprising" refer to components, steps, operations, and / or elements, but do not exclude the presence or addition of one or more other components, steps, operations, and / or elements.

[0033] One element is "connected" to another element. "To" or "coupled to" includes both direct and direct connection or coupling to another element, and includes intervening elements between them. In contrast, when an element is referred to as being "directly connected to" or "directly coupled to" another element, it does not include intervening elements between them. "And / or" includes each and every combination of one or more of the listed items.

[0034] Spatially relative terms such as "below," "beneath," "lower," "above," "upper," and the like may be used to easily describe the relationship of one element or component to another as depicted. Spatially relative terms should be understood to encompass different orientations of elements in use or operation in addition to the orientation depicted. For example, if an element as depicted is inverted, an element described as "below" or "beneath" another element may be positioned "above" the other element.

[0035] Furthermore, the embodiments described herein will be described with reference to cross-sectional views and / or plan views that are idealized exemplary views. In the drawings, the thicknesses of films and regions are exaggerated for the purpose of effectively explaining the technical content. As a result, the shapes of the exemplary views may vary due to manufacturing techniques and / or tolerances. As a result, the embodiments are not limited to the specific shapes shown in the drawings, but also include variations in shapes that occur during the manufacturing process. For example, a region shown with a right angle may be rounded or have a shape with a predetermined curvature. Therefore, the regions illustrated in the drawings have schematic attributes, and the shapes of the regions illustrated in the drawings are intended to illustrate specific forms of regions of elements, and are not intended to limit the scope of the invention.

[0036] The same reference numerals refer to the same elements throughout the specification. Therefore, the same or similar reference numerals may be used in other drawings even if they are not mentioned or described in the drawing. Also, the same or similar reference numerals may be used in other drawings even if they are not shown.

[0037] 1 is a block diagram illustrating an image sensor 800 according to an embodiment. Referring to FIG. 1, the image sensor according to an embodiment includes a pixel array 810 in which a plurality of pixels are arranged in a matrix structure, a correlated double sampler (CDS) 820, an analog-digital converter (ADC) 830, a buffer 840, a row driver 850, a timing generator 860, a control register 870, and a ramp signal generator 880. The signal generator 880 may include a

[0038] The pixel array 810 may include a plurality of pixels arranged in a matrix structure. Each of the plurality of pixels can convert optical image information into an electrical image signal and transfer it to the correlated double sampler 820 through column lines. Each of the plurality of pixels can be connected to one of the row lines and one of the column lines.

[0039] The correlated double sampler 820 may hold and sample the electrical image signal received from the pixel of the pixel array 810. For example, the correlated double sampler 820 may sample a reference voltage level and a voltage level of the received electrical image signal in accordance with a clock signal provided by the timing generator 860, and transfer an analog signal corresponding to the difference to the analog-to-digital converter 830.

[0040] The analog-to-digital converter 830 can convert the received analog signal into a digital signal and transfer it to the buffer 840 .

[0041] The buffer 840 may latch the received digital signal and sequentially output it to a video signal processor (not shown). The buffer 840 may include a memory for latching the digital signal and a sense amplifier for amplifying the digital signal.

[0042] The row driver 850 can drive a plurality of pixels of the pixel array 810 according to signals from the timing generator 860. For example, the row driver 850 can generate a selection signal for selecting and / or a drive signal for driving one row line among a plurality of row lines.

[0043] The timing generator 860 can generate timing signals to control the correlated double sampler 820 , the analog-to-digital converter 830 , the row driver 850 , and the ramp signal generator 880 .

[0044] The control register 870 controls the buffer 840, the timing generator 860, and and a control signal for controlling the ramp signal generator 880.

[0045] The ramp signal generator 880 can generate a ramp signal for controlling the image signal output from the analog-to-digital converter 830 to the buffer 840 under the control of the timing generator 860 .

[0046] FIG. 2 is a cross-sectional view of an image sensor according to an embodiment.

[0047] 1 and 2, the image sensor 10 may include pixels PX and isolation regions NPX between the pixels PX. The image sensor 10 may include a substrate 120, a circuit unit 110 under the substrate 120, a first reflecting unit 140 and a lens unit 150 disposed in the substrate 120, an insulating layer 130 on the substrate 120, a second reflecting unit 160 on the insulating layer 130, and a light-collecting pattern 200 on the second reflecting unit 160 and the insulating layer 130.

[0048] The circuit section 110 is disposed on the lower surface of the substrate 120 and may include transistors, wiring layers, and interlayer insulating layers.

[0049] The transistors may include an overflow transistor, a transfer transistor, a reset transistor, a driving transistor, and a select transistor formed on the lower surface of the substrate 120 .

[0050] The wiring layer may transmit electrical signals generated from the photodiode to an image processing circuit, a display circuit, etc. The wiring layer may include a conductor such as a metal, and may include various line-shaped and via-shaped patterns.

[0051] An interlayer insulating layer may cover the underside of substrate 120, the transistors, and the wiring layer, and may comprise an insulator such as silicon dioxide.

[0052] Substrate 120 may include a single crystal silicon wafer or an epitaxially grown single crystal silicon layer. Substrate 120 may have a high refractive index. For example, but not limited to, the refractive index of substrate 120 may be about 2.5 or greater.

[0053] The portion of the substrate 120 located at the pixel PX may be a photodiode. The photodiode located at the pixel PX may be formed by implanting P-type and N-type ions into the substrate 120. The P-type ions may include boron (B) ions, and the N-type ions may include phosphorous (P) and / or arsenic (As) ions. The photodiode receives light incident on the substrate 120 and converts the optical signal into an electrical signal.

[0054] The separation region NPX can separate the pixels PX. The separation region NPX can define one pixel PX.

[0055] The isolation region NPX may optically and electrically isolate and define each pixel PX. A first reflective portion 140 and a second reflective portion 160 may be disposed in the isolation region NPX. The first reflective portion 140 of the isolation region NPX may be formed by forming a deep trench in the substrate 120 and filling the deep trench with an insulating material. For example, the formation of the first reflective portion 140 may include, but is not limited to, performing a deep trench isolation (DTI) process. The first reflective portion 140 may serve to totally reflect light incident from the upper surface of the substrate 120.

[0056] In the pixel PX, a lens unit 150 may be disposed within the substrate 120. The lens unit 150 may be disposed within the substrate 120 by being inserted from the upper surface of the substrate 120 in the thickness direction.

[0057] The lens unit 150 may include a metalens. The metalens includes nanopatterns arranged in a predetermined shape to focus light. For example, the lens unit 150 may include nanopatterns 151 and insulating patterns 155 disposed between adjacent nanopatterns 151. The nanopatterns 151 may include, but are not limited to, Si, TiO2, SiO2, HfO, AlO, etc. The insulating patterns 155 may include, but are not limited to, the same material as the substrate 120 described above. When the insulating patterns 155 include the same material as the substrate 120, the insulating patterns 155 and the substrate 120 may be integrally formed. The lens unit 150 may be disposed for each pixel PX. The lens unit 150 may have a first thickness t1. A distance between the lens unit 150 and the bottom surface of the substrate 120 may have a first length d. The first thickness t1 and the first length d may be set in relation to the width of the pixel PX, as will be described later. The refractive index of the lens unit 150 may be smaller than the refractive index of the light-condensing pattern 200 and the refractive index of the substrate 120. For example, the refractive index of the lens unit 150 may be smaller than the refractive index of the substrate 120 by about 1 or more. As will be described later, the lens unit 150 may serve to change the path of the first light incident from the upper surface of the substrate 120. For example, the lens unit 150 may serve to scatter the first light. Scattering of light may be more likely to occur at an interface between two materials having a large difference in refractive index. That is, since the refractive index of the lens unit 150 according to an embodiment is smaller than that of the substrate 120 by about 1 or more, the first light incident from the upper surface of the substrate 120 may be scattered at the interface between the substrate 120 and the lens unit 150. For example, the refractive index of the lens unit 150 may be, but is not limited to, about 1.4 to about 1.6.

[0058] The lens portion 150 may have a shape of, but is not limited to, a cylinder, a square prism, or any other polygonal prism.

[0059] The separation region NPX may include a first reflecting portion 140 and a second reflecting portion 160. A lens portion 150 may be disposed between adjacent first reflecting portions 140. The first reflecting portion 140 may have a second thickness t2. The second thickness t2 may be greater than the first thickness t1. The first reflecting portion 140 may reflect the first light incident from the upper surface of the substrate 120 and cause the first light to be incident on the pixel PX of the substrate 120. To this end, the refractive index of the first reflecting portion 140 is preferably smaller than the refractive index of the light-condensing pattern 200 and the refractive index of the substrate 120. For example, the refractive index of the first reflecting portion 140 may be, but is not limited to, about 1.2 to about 1.6. The second reflecting portion 160 may perform the same or similar function as that described above for the first reflecting portion 140. The second reflecting portion 160 may reflect the first light provided from the light-condensing pattern 200 and cause the first light to be incident on the pixel PX of the substrate 120. Therefore, it is preferable that the refractive index of the second reflecting portion 160 is also smaller than the refractive index of the light-condensing pattern 200. For example, the refractive index of the second reflecting portion 160 may be, but is not limited to, about 1.2 to about 1.6.

[0060] An insulating layer 130 may be disposed on the substrate 120. The lower surface of the insulating layer 130 may be in direct contact with the first reflecting unit 140 and the lens unit 150. The insulating layer 130 may serve as a support on which the light-condensing pattern 200 is disposed. The insulating layer 130 may include a low-refractive material such as silicon oxide. The insulating layer 130 may function as an anti-reflection layer to prevent light incident from the light-condensing pattern 200 from being totally reflected by the lens unit 150.

[0061] For optical isolation between the light-collecting pattern 200 and the substrate 120, for example, a second reflecting portion 160 may be disposed in the isolation region NPX on the insulating layer 130. The second reflecting portion 160 has been described above, so a detailed description thereof will be omitted.

[0062] Light-collecting patterns 200 may be disposed between the second reflectors 160. The light-collecting patterns 200 may serve to receive the first light incident from the outside into the pixels PX. To this end, the light-collecting patterns 200 may have a convex lens shape and may be formed of a material having a refractive index that is significantly different from that of the external air. For example, the refractive index of the light-collecting patterns 200 may be, but is not limited to, approximately 1.5 to approximately 1.7. As shown in FIG. 1, the light-collecting patterns 200 may be disposed continuously in the pixels PX and the isolation regions NPX, with the end of the convex lens shape being located at the center of the pixels PX, but is not limited to this. For example, the light-collecting patterns 200 may be interrupted by the isolation regions NPX. In this case, multiple light-collecting patterns 200 may be disposed in each pixel PX.

[0063] Hereinafter, the functions of the lens unit 150 and the first reflecting unit 140 of the image sensor 10 described above with reference to FIG. 2 will be described in detail.

[0064] FIG. 3 is a schematic diagram showing a path of a first light in an image sensor according to an embodiment. FIG. 4 is a schematic diagram showing a path of a second light in an image sensor according to an embodiment. FIG. 3 shows 1-1 light L1a and 1-2 light L1b. The first light described above in FIG. 2 may include 1-1 light L1a and 1-2 light L1b. The first light L1a and L1b may be light in the infrared wavelength band. For example, the wavelength range of the first light L1a and L1b may be approximately 750 nm to 10,000 nm.

[0065] As shown in FIG. 3, the first light beam L1a and the second light beam L1b may be refracted by the light-condensing pattern 200. As described above, the refractive index of the light-condensing pattern 200 is greater than that of external air, and thus the first light beam L1a may enter the light-condensing pattern 200 at the same refraction angle as in FIG. 3. The first light beam L1a may be totally reflected by the second reflecting unit 160 and incident on the pixel PX of the substrate 120. As described above with reference to FIG. 2, the reflecting units 140 and 160 may each reflect the incident first light beam L1a and cause it to enter the pixel PX of the substrate 120. For this reason, the refractive index of the reflecting units 140 and 160 is preferably smaller than the refractive index of the light-condensing pattern 200 and the substrate 120. For example, the refractive index of the reflecting units 140 and 160 may be, but is not limited to, about 1.2 to about 1.6. The reflecting portions 140 and 160 serve to totally reflect the 1-1 light L1a incident on the isolation region NPX to the pixel PX of the substrate 120, thereby increasing the amount of the 1-1 light L1a received by the pixel PX. In order for the first reflecting portion 140 to cause the 1-1 light L1a to be incident on the photodiode of the pixel PX, it is preferable that the second thickness t2 of the first reflecting portion 140 be approximately 1.5 times the first thickness t1 or more. Furthermore, as described above, the first reflecting portion 140 is formed by forming a deep trench in the substrate 120 and filling the deep trench with an insulating material. Therefore, having the second thickness t2 be approximately 8 times the first thickness t1 or less has the advantage of shortening the process time.

[0066] Furthermore, the first-second light L1b incident on the light-collecting pattern 200 may be provided to the substrate 120 and the lens unit 150 disposed within the substrate 120 after passing through the insulating layer 130. The first-second light L1b incident on the upper surface of the substrate 120 may have its optical path changed by the lens unit 150. For example, the first-second light L1b may serve to scatter the first-second light L1b at a specific angle (see L1c in FIG. 3) after passing through the lens unit 150. As described above in FIG. 2, the photodiode serves to receive the light incident on the substrate 120 and convert the optical signal into an electrical signal. Meanwhile, the photodiode receives the incident light The amount of received light may vary depending on the wavelength range of the incident light. For example, the longer the wavelength range of the incident light, the less light the photodiode may receive. The image sensor 10 according to an embodiment may receive the first light L1a and L1b in the infrared wavelength range and convert the optical signal of the first light L1a and L1b into an electrical signal. However, because the first light L1a and L1b have a long wavelength range within the infrared wavelength range, the amount of received light by the photodiode may be reduced. To address this issue, the image sensor 10 according to an embodiment may include a lens unit 150 inserted from the top surface of the substrate 120, and the lens unit 150 may scatter the light passing through the lens unit 150 at a larger angle. The scattered first to third light L1c has a longer optical path than other light passing through the photodiode in a straight line, and therefore the amount of received light of the first to third light L1c (or infrared light) by the photodiode in the pixel PX may be increased. In order for the lens unit 150 to optically scatter the incident 1-2 light L1b and effectively increase the optical path length of the 1-3 light L1c, the first thickness t1 is preferably at least about 0.5 times the width of the pixel PX. Furthermore, like the first reflecting unit 140, the lens unit 150 is formed by forming a deep trench in the substrate 120 and filling the deep trench with a lens unit material, so that having the first thickness t1 at most about 8 times the width of the pixel PX has the advantage of shortening the process time. The first length d from the lower surface of the substrate 120 to the lower end of the lens unit 150 may be, but is not limited to, 1 to 8 times the width of the pixel PX.

[0067] Meanwhile, as described above, the image sensor 10 according to one embodiment receives the first light L1a, L1b in the infrared wavelength range and converts the optical signal of the first light L1a, L1b into an electrical signal, so it is preferable to prevent light in a wavelength range other than the infrared wavelength range from entering the inside of the photodiode.

[0068] As shown in FIG. 4 , the second light L2 in the visible wavelength range incident on the upper surface of the substrate 120 may be totally reflected by the lens unit 160 and may not enter the photodiode of the pixel PX. As described above, the refractive index of the lens unit 150 may be smaller than the refractive index of the light-condensing pattern 200 and the refractive index of the substrate 120. For example, the refractive index of the lens unit 150 may be smaller than the refractive index of the substrate 120 by about 1 or more. As a result, the second light L2 in the visible wavelength range incident on the upper surface of the substrate 120 may be totally reflected by the lens unit 150 and may not enter the photodiode of the pixel PX. That is, in the image sensor 10 according to the embodiment, the received amount of the first light L1a and L1b in the infrared wavelength range is increased by total reflection and scattering using the reflecting units 140 and 160 and the lens unit 150, respectively, and the received amount of the second light L2 in the visible wavelength range is reduced by inducing total reflection using the lens unit 150. As a result, the light receiving efficiency of the image sensor 10 can be improved.

[0069] Fig. 5 is a plan view showing the arrangement of lens units of an image sensor according to one embodiment, Fig. 6 is a plan view showing the arrangement of lens units of an image sensor according to another embodiment, and Fig. 7 is a plan view showing the arrangement of lens units of an image sensor according to yet another embodiment.

[0070] 2 and 5 to 7, the arrangement of nanopatterns in the lens portion 150 of the image sensor 10 is shown.

[0071] 5, the nanopatterns of the lens portion 150 may be spaced apart from each other along the row and column directions within the pixel PX. The planar shape of the nanopattern may be circular.

[0072] 6, the nanopatterns of the lens unit 150 may be spaced apart from each other along the row and column directions within the pixel PX. The planar shape of the nanopattern may be a rectangle. However, the planar shape of the nanopattern is not limited thereto, and may be a triangle, a pentagon, etc. The shape may be any of various polygonal shapes or may be an irregular shape.

[0073] As shown in Fig. 7, the nanopatterns of the lens unit 150 may be spaced apart from one another along the row and column directions within a pixel PX. The planar shape of the nanopattern may be elliptical. While Fig. 7 illustrates an example in which the nanopattern is elliptical and extends in the column direction, the nanopattern is not limited thereto and may be elliptical and extend in the row direction.

[0074] Image sensors according to other embodiments will now be described.

[0075] FIG. 8 is a cross-sectional view of an image sensor according to still another embodiment.

[0076] 8, the image sensor 11 according to this embodiment differs from the image sensor 10 according to FIG. 2 in that a color filter layer 170 may be disposed between the light-collecting pattern 200 and the insulating layer 130. In FIG.

[0077] More specifically, a color filter layer 170 may be disposed between the light-collecting pattern 200 and the insulating layer 130. The color filter layer 170 may be disposed in the pixel PX. The color filter layer 170 can transmit light that blocks visible light. The color filter layer 170 can allow only infrared light in the infrared wavelength band to enter. For example, the color filter layer 170 may include a red color filter that transmits red and absorbs green and blue, a green color filter that transmits green and absorbs red and blue, and a blue color filter that transmits blue and absorbs red and green, and may have a structure in which the above-mentioned red, green, and blue color filters are stacked. The stacking order of the red, green, and blue color filters is not limited.

[0078] According to this embodiment, a color filter layer 170 that absorbs light in the visible light wavelength range is further disposed between the light-collecting pattern 200 and the insulating layer 130, thereby This has the advantage that the amount of received first light (see L1a and L1b in FIG. 3) in the infrared wavelength range can be increased, and light receiving efficiency can be improved.

[0079] FIG. 9 is a cross-sectional view of an image sensor according to still another embodiment.

[0080] 9, the image sensor 12 differs from the image sensor 10 of FIG. 3 in that two or more lens units 150, 150_2 may be arranged in the pixel region PX. As described above, in the image sensor 10 of FIG. 2, the received amount of first light L1a, L1b in the infrared wavelength range is increased by total reflection using the reflecting units 140, 160 and the lens unit 150, respectively, and by inducing scattering of the light at a larger angle after passing through the lens unit 150. Meanwhile, the received amount of second light L2 in the visible wavelength range can be reduced by inducing total reflection using the lens unit 150. As a result, the light receiving efficiency of the image sensor 10 can be improved. According to the image sensor 12 of FIG. 9, a second lens unit 150_2 may be further arranged at the lower end of the first reflecting unit 140. The second lens unit 150_2 may include a plurality of nanopatterns 151 and an insulating pattern 155 between adjacent nanopatterns 151, similar to the lens unit 150. As described above in FIG. 2, the refractive index of the lens unit 150 may be smaller than the refractive index of the light-condensing pattern 200 and the refractive index of the substrate 120. For example, the refractive index of the lens unit 150 may be smaller than the refractive index of the substrate 120 by about 1 or more. The refractive index of the second lens unit 150_2 may be the same as the refractive index of the lens unit 150. Light passing through the lens unit 150 can pass through the substrate 120. A portion of the light passing through the substrate 120 may be totally reflected at the interface between the substrate 120 and the second lens unit 150_2 due to the difference in refractive index between the substrate 120 and the second lens unit 150_2. Second lens Light totally reflected at the interface between the second lens portion 150_2 and the substrate 120 is scattered at a large angle by the second lens portion 150_2, and the light path within the substrate 120 becomes longer, which has the advantage of further increasing the amount of light received by the photodiode in the pixel PX compared to the embodiment of Figure 3.

[0081] FIG. 10 is a diagram that schematically illustrates an electronic device according to one embodiment.

[0082] 1 to 10, an electronic device according to an embodiment may include a camera capable of capturing still images or video. The electronic device may include an optical system (or optical lens) 910, a shutter unit 911, a driver 913 that controls / drives the image sensor 900 and the shutter unit 911, and a signal processor 912. At least one of the image sensors 900 described above with reference to FIGS. 1 to 9 may be applied to the image sensor 900 shown in FIG. 10.

[0083] The optical system 910 can guide image light (incident light) from an object to the pixel array of the image sensor 900 (see reference numeral "810" in FIG. 1). The optical system 910 may include multiple optical lenses. The shutter unit 911 can control the period during which light is irradiated and blocked from the image sensor 900. The driver 913 can control the transfer operations of the image sensors 10, 11, and 12 and the shutter operation of the shutter unit 911. The signal processor 912 performs various types of signal processing on the signal output from the image sensor 900. The image signal Dout after signal processing may be stored in a storage medium such as a memory or output to a monitor or the like.

[0084] Although one embodiment has been described above with reference to the accompanying drawings, it will be understood that the above-described technical configuration can be embodied in other specific forms by those skilled in the art to which this specification pertains without changing the technical spirit or essential features thereof. Therefore, the above-described embodiment should be understood to be illustrative in all respects and not limiting. The scope of the present invention is defined not by the above detailed description but by the claims that follow. Furthermore, all modifications and variations derived from the meaning and scope of the claims and their equivalents should be construed as being within the scope of the present invention. [Explanation of symbols]

[0085] 10, 11, 12, 900: Image sensor 110: Circuit section 120: Circuit board 130: Insulating layer 140: 1st reflection section 150, 150_1, 150_2: Lens part 160:Second reflection section 170: Color filter layer 200: Light collection pattern

Claims

1. a photodiode formed within a pixel of the substrate; a lens portion inserted and disposed within the pixel of the substrate; a first reflecting portion disposed in an isolation region of the substrate and positioned within the substrate; a light-collecting pattern disposed on the substrate.

2. The image sensor according to claim 1 , wherein the lens portion is inserted inward from the upper surface of the substrate.

3. The image sensor of claim 2 , wherein the lens portion comprises a metalens, and the lens portion comprises a plurality of nanopatterns.

4. The image sensor according to claim 1 , wherein the first reflecting portion is inserted inward from an upper surface of the substrate.

5. The image sensor of claim 1 , further comprising an insulating layer between the substrate and the light-collecting pattern.

6. The image sensor of claim 1 , further comprising a second reflecting portion disposed in the separation region between the substrate and the light-collecting pattern.

7. The image sensor according to claim 1 , wherein the refractive index of the lens portion is smaller than the refractive index of the light-collecting pattern and the refractive index of the substrate.

8. The image sensor according to claim 7 , wherein the refractive index of the lens portion is smaller than the refractive index of the substrate by at least 1.

9. 9. The image sensor according to claim 8, wherein the refractive index of the lens portion is 1.4 to 1.

6.

10. The image sensor of claim 1 , wherein the refractive index of the first reflecting portion is smaller than the refractive index of the light-collecting pattern and the refractive index of the substrate.

11. 11. The image sensor according to claim 10, wherein the refractive index of the first reflecting portion is 1.2 to 1.

6.

12. The image sensor of claim 1 , wherein the thickness of the first reflecting portion is 1.5 times or more the thickness of the nano-pattern of the lens portion.

13. The image sensor of claim 1 , wherein the thickness of the nano-pattern of the lens portion is 0.5 to 8 times the width of the pixel.

14. The image sensor according to claim 1 , wherein the length from the lower surface of the substrate to the lower end of the nanopattern of the lens portion is 1 to 8 times the width of the pixel.

15. a photodiode formed within a pixel of the substrate; a lens portion inserted and disposed within the pixel of the substrate; a first reflecting portion disposed in an isolation region of the substrate and positioned within the substrate; a light-collecting pattern disposed on the substrate; a color filter layer between the substrate and the light-collecting pattern; The color filter layer transmits light in the infrared wavelength range.

16. 16. The image sensor of claim 15, wherein the color filter layer does not transmit light in the visible wavelength range.

17. The image sensor according to claim 15 , wherein the lens portion is inserted inward from the upper surface of the substrate.

18. 20. The image sensor of claim 17, wherein the lens portion comprises a metalens, and the lens portion comprises a plurality of nanopatterns.

19. the metalens scatters light in the infrared wavelength range; The image sensor of claim 18 , wherein the first reflecting portion reflects light in the infrared wavelength range incident on the substrate.

20. 20. The image sensor of claim 18, wherein the metalens does not transmit light in the visible wavelength range.

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