Workpiece surface treatment method and workpiece surface treatment apparatus

Abstract

To provide a workpiece surface treatment method and a workpiece surface treatment apparatus, capable of generating a functional group on an adhesive surface without roughening the surface of the adhesive surface of the material to be treated, and capable of enhancing adhesion of a thin film to the adhesive surface in a film deposition process.SOLUTION: A workpiece surface treatment method includes: performing a surface treatment process on a bonding surface of a substrate 3 to which a thin film is to be bonded, prior to a film formation process for bonding the thin film to the surface of the substrate 3; introducing an inert gas 10 into a vacuum chamber 1 in which an electrode 2 is placed; setting the workpiece 3 serving at the ground potential; applying a negative potential to an electrode 2 using a high-frequency power source 6 that periodically applies a negative potential; bringing the workpiece 3 in a state separated from a holding member 4, between the electrode 2 and the holding member 4; and making plasma-activated inert gas 10 act on the processing surface of the workpiece 3 in the state of being separated from the holding member 4 when the negative potential is not applied.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a surface treatment method for a treated material, which performs a surface treatment process on the bonding surface of the treated material to which a thin film is to be bonded before a film formation process for bonding a thin film to the surface of the treated material, and a surface treatment device for a treated material, which places an electrode in a vacuum chamber, introduces an inert gas into the vacuum chamber, and performs surface treatment on the bonding surface of the treated material. [Background technology]

[0002] Patent Document 1 discloses that, before bonding, a plasma (or ion) generating unit converts introduced gas into plasma (or ions), accelerates the plasma (or ions) at a voltage of 1000 to 500,000 V, and irradiates the resin sheet on a metal roll held at earth potential. Thus, Patent Document 1 claims that the transient activated state obtained by the short-term and immediate treatment with high-energy plasma (or ions) can significantly improve the adhesive strength of the thin film formed by bonding to the resin sheet immediately thereafter, without causing deterioration of the resin sheet. Patent Document 2 discloses a surface treatment that improves adhesion while maintaining the smoothness of the resin layer surface by treating the resin layer surface with nitrogen plasma before forming a copper film on the resin layer surface. Furthermore, Patent Documents 3 to 5 also disclose techniques for surface treating resin films using ionized nitrogen gas. However, in Patent Document 1, the resin sheet is irradiated with high-energy plasma (or ions), which increases the surface roughness of the resin sheet. In addition, in Patent Document 2, a substrate on which a resin layer is laminated is placed on an electrode, and a negative potential is applied to this electrode, so that plasmatized nitrogen ions are irradiated onto the resin layer, and as in Patent Document 1, the surface roughness of the resin layer increases. Furthermore, in Patent Documents 3 to 5, ionized nitrogen gas is irradiated onto the surface of a resin film. FIG. 5 shows a conventional device for irradiating the surface of a resin film with ionized nitrogen gas. FIG. 5 is a diagram showing the configuration of a conventional surface treatment device for a material to be treated. In a conventional surface treatment device for a material to be treated, a plate electrode 2 is placed in a vacuum chamber 1, an inert gas 10 is introduced into the vacuum chamber 1, and the surface treatment is performed on the bonding surface of the material to be treated 3. The material to be treated 3 is moved at a predetermined speed by a holding member (roll) 4. The holding member 4 is connected to a high-frequency power source (Rf power source) 6 via a matching box 5. The high-frequency power source 6 periodically applies a negative potential to the holding member 4. The cable connecting the matching box 5 and the holding member 4 is electrically insulated from the chamber forming the vacuum chamber 1 by an insulating member 7. The plate electrode 2 is connected to a ground electrode, and therefore has a ground potential (0 V). With such a conventional surface treatment device for a treated material, when a negative potential is applied, the plasmatized inert gas 10 moves toward the bonding surface of the treated material 3 with high kinetic energy E2, damaging the surface of the bonding surface of the treated material 3 and roughening the surface. Therefore, the applicant has proposed a surface treatment device for the treated material that can generate functional groups on the adhesive surface without roughening the surface of the adhesive surface of the treated material 3, thereby increasing the adhesion of the thin film to the adhesive surface during the film formation process (Patent Document 6). FIG. 6 is a diagram showing the configuration of the surface treatment device for the material to be treated proposed in Patent Document 6. The surface treatment device for a material to be treated shown in FIG. 6 has an electrode 2 disposed in a vacuum chamber 1, and an inert gas 10 introduced into the vacuum chamber 1 to perform surface treatment on the bonding surface of a material to be treated 3. The material to be treated 3 is moved at a predetermined speed by a holding member 4. The holding member 4 is connected to a ground electrode. Therefore, the material to be treated 3 is at ground potential (0 V) via the holding member 4. The electrode 2 is connected to a high frequency power source (Rf power source) 6 via a matching box 5 . The high frequency power supply 6 periodically applies a negative potential to the electrode 2. For example, the high frequency power supply 6 applies a voltage between -160 V and 0 V to the electrode 2. The applied output of the high frequency power supply 6 is set to 2 kW to 10 kW. The cable connecting the matching box 5 and the electrode 2 is electrically insulated from the chamber forming the vacuum chamber 1 by an insulating member 7 . According to the surface treatment device for the treated material disclosed in Patent Document 6, when a negative potential is applied, the plasmatized inert gas 10 moves toward the electrode 2 with high kinetic energy E2, and when a negative potential is not applied, the plasmatized inert gas 10 acts on the adhesive surface of the treated material 3 with low kinetic energy E1, so that functional groups can be generated on the adhesive surface without damaging the surface of the adhesive surface of the treated material 3, and the adhesion of the thin film to the adhesive surface can be increased in the film formation process. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-71985 [Patent Document 2] Japanese Patent Application Laid-Open No. 2004-162098 [Patent Document 3] Japanese Patent Application Laid-Open No. 2005-199544 [Patent Document 4] Japanese Patent Application Laid-Open No. 2004-31370 [Patent Document 5] Japanese Patent Application Laid-Open No. 2005-54259 [Patent Document 6] Patent No. 7377543 Summary of the Invention [Problem to be solved by the invention]

[0004] However, it has been found that in the surface treatment apparatus for a treated material shown in FIG. 6, when a fluororesin having a large coefficient of thermal expansion is used as the treated material 3, wrinkles may occur. Furthermore, when surface treatment is performed while the material is in close contact with the holding member 4, as in the surface treatment device for the material to be treated shown in Figure 6, the material to be treated 3 becomes dependent on the temperature of the holding member 4, making it difficult to perform surface treatment at temperatures above a predetermined temperature.

[0005] Therefore, the present invention aims to provide a surface treatment method and a surface treatment device for a treated material that can generate more functional groups on the adhesive surface without roughening the surface of the adhesive surface of the treated material, and that can increase the adhesion of the thin film to the adhesive surface during the film formation process. [Means for solving the problem]

[0006] The surface treatment method of the present invention described in claim 1 is a surface treatment method of the workpiece 3, which performs a surface treatment process on the bonding surface of the workpiece 3 to which a thin film is to be bonded before a film formation process in which a thin film is bonded to the surface of the workpiece 3, and is characterized in that an inert gas 10 is introduced into a vacuum chamber 1 in which an electrode 2 is placed, the workpiece 3 is at ground potential, and a negative potential is applied to the electrode 2 by a high-frequency power source 6 that periodically applies a negative potential, the workpiece 3 is spaced from the holding member 4 between the electrode 2 and the holding member 4, and the plasmatized inert gas 10 is applied to the treatment surface of the workpiece 3 that is spaced from the holding member 4 when the negative potential is not applied. The present invention according to claim 2 is characterized in that in the method for treating a surface of a treated material according to claim 1, a plate-shaped electrode 2 is used as the electrode 2, and the plate-shaped electrode 2 is made of a material that is difficult to etch. The present invention as set forth in claim 3 is characterized in that in the method for treating a surface of a treatment object as set forth in claim 1, the pressure inside the vacuum chamber 1 is set to 0.1 Pa or more and 10 Pa or less. The present invention as set forth in claim 4 is characterized in that, in the method for treating the surface of a workpiece as set forth in any one of claims 1 to 3, the workpiece 3 is a fluororesin sheet and the thin film is a copper thin film. The present invention as set forth in claim 5 is characterized in that in the method for treating a surface of a treatment object as set forth in claim 4, the treatment object 3 is a PTFE sheet. The present invention as set forth in claim 6 is characterized in that, in the method for treating the surface of a workpiece as set forth in any one of claims 1 to 3, the workpiece 3 is an LCP film, and the thin film is a copper thin film. The present invention as set forth in claim 7 is characterized in that in the method for treating a surface of a treatment object as set forth in claim 1, the inert gas 10 is N2, and H20 is introduced into the vacuum chamber 1 together with the N2. The surface treatment device for a treated material of the present invention described in claim 8 is a surface treatment device for a treated material that arranges an electrode 2, a holding member 4, and a pair of rollers 11 for forming a treated surface in a vacuum chamber 1, introduces an inert gas 10 into the vacuum chamber 1, and performs surface treatment on the adhesive surface of the treated material 3, wherein the holding member 4 is at ground potential, and the electrode 2 is energized by a high-frequency power source 6 that periodically provides a negative potential, and the treated material 3 is spaced apart from the holding member 4 between the pair of rollers 11 for forming a treated surface, and the holding member 4 is positioned on one side and the electrode 2 is positioned on the other side of the treatment surface of the treated material 3 in the spaced apart state. The present invention as set forth in claim 9 is characterized in that in the apparatus for treating a surface of a treated material as set forth in claim 8, a plate-shaped electrode 2 is used as the electrode 2, and the plate-shaped electrode 2 is made of a material that is difficult to etch. The present invention as set forth in claim 10 is characterized in that, in the surface treatment device for a treated material as set forth in claim 8, the treated material 3 is brought into close contact with the holding member 4 downstream of the pair of treated surface forming rollers 11. [Effects of the Invention]

[0007] According to the surface treatment method of the present invention, when a negative potential is applied, the plasmatized inert gas moves toward the electrode with high kinetic energy, and when a negative potential is not applied, the plasmatized inert gas acts on the adhesive surface of the treated material with low kinetic energy.This makes it possible to generate functional groups on the adhesive surface without roughening the surface of the adhesive surface of the treated material, and to increase the adhesion of the thin film to the adhesive surface in the film formation process. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a block diagram showing a surface treatment device for a workpiece according to an embodiment of the present invention; [Figure 2]Figure showing the results of surface treatment when a PTFE (polytetrafluoroethylene) sheet is used as the treated material. [Figure 3] Figure showing peel test results when a PTFE (polytetrafluoroethylene) sheet was used as the treated material. [Figure 4] FIG. 10 is a block diagram showing a surface treatment device for a workpiece according to another embodiment of the present invention; [Figure 5] Schematic diagram showing a conventional surface treatment device for materials to be treated. [Figure 6] A diagram showing the configuration of a surface treatment device for a material to be treated proposed in the prior art. DETAILED DESCRIPTION OF THE INVENTION

[0009] In a first embodiment of the present invention, a surface treatment method for a workpiece is performed by introducing an inert gas into a vacuum chamber in which an electrode is placed, grounding the workpiece, periodically applying a negative potential to the electrode using a high-frequency power supply, separating the workpiece from the holding member between the electrode and the holding member, and applying plasma of the inert gas to the treatment surface of the workpiece separated from the holding member when the negative potential is not being applied. This embodiment increases the temperature of the treatment surface of the workpiece, thereby generating more functional groups on the bonding surface without roughening the surface of the workpiece, thereby increasing the adhesion of the thin film to the bonding surface during the film formation process.

[0010] The second embodiment of the present invention is the same as the first embodiment in that a plate electrode is used as the electrode, and the plate electrode is made of a material that is difficult to etch. According to this embodiment, by using a plate electrode made of a material that is difficult to etch, it is possible to prevent substances that fly out from the electrode from affecting the bonding surface of the workpiece.

[0011] In the third embodiment of the present invention, in the method for surface treatment of a workpiece according to the first embodiment, the pressure inside the vacuum chamber is set to 0.1 Pa or more and 10 Pa or less. According to this embodiment, by setting the degree of vacuum to 10 Pa or less, it becomes easier to adjust the kinetic energy of the inert gas.

[0012] A fourth embodiment of the present invention relates to the method for surface treatment of a workpiece according to any one of the first to third embodiments, except that the workpiece is a fluororesin sheet and the thin film is a copper thin film. This embodiment eliminates the occurrence of wrinkles due to a large thermal expansion coefficient, and allows the copper thin film to be firmly adhered while maintaining the smoothness of the surface roughness of the bonding surface of the workpiece. Furthermore, since a smooth copper thin film can be formed, the surface resistance of the copper thin film can be reduced, and power loss due to high frequencies in the copper thin film can be reduced. Furthermore, when pattern etching is performed on a workpiece on which a copper thin film has been formed, the smooth etched end faces allow for the formation of fine patterns, improving pattern accuracy.

[0013] The fifth embodiment of the present invention is the method for surface treatment of a workpiece according to the fourth embodiment, in which the workpiece is a PTFE sheet. According to this embodiment, PTFE, which has excellent low dielectric properties, can be used.

[0014] The sixth embodiment of the present invention is a method for surface treatment of a workpiece according to any one of the first to third embodiments, in which the workpiece is an LCP film and the thin film is a copper thin film. According to this embodiment, an LCP film with excellent low water absorption can be used.

[0015] In the seventh embodiment of the present invention, in the method for surface treatment of a workpiece according to the first embodiment, the inert gas is N2, and H20 is introduced into the vacuum chamber together with N2. According to this embodiment, the surface roughness of the workpiece can be maintained smooth, and a thin film can be firmly adhered.

[0016] In the surface treatment device for a workpiece according to the eighth embodiment of the present invention, the holding member is at ground potential, and the electrode is periodically energized with a negative potential by a high-frequency power source, the workpiece is spaced apart from the holding member between a pair of treatment surface forming rollers, and the holding member is positioned on one side relative to the treatment surface of the workpiece in the spaced apart state, and the electrode is positioned on the other side. According to this embodiment, the temperature of the treatment surface of the workpiece can be increased, so that more functional groups can be generated on the bonding surface without damaging the surface of the bonding surface of the workpiece, and the adhesion of the thin film to the bonding surface in the film formation process can be increased.

[0017] The ninth embodiment of the present invention is an apparatus for treating the surface of a workpiece according to the eighth embodiment, in which a plate electrode is used as the electrode, and the plate electrode is made of a material that is difficult to etch. According to this embodiment, by using a plate electrode made of a material that is difficult to etch, it is possible to prevent substances that fly out from the electrode from affecting the bonding surface of the workpiece.

[0018] The tenth embodiment of the present invention is an apparatus for treating a surface of a treated material according to the eighth embodiment, in which the treated material is brought into close contact with a holding member downstream of a pair of rollers for forming a treated surface. According to this embodiment, the material can be slowly cooled by the holding member, and the surface can be smoothed. [Example]

[0019] An embodiment of the surface treatment device for a workpiece according to the present invention will now be described. FIG. 1 is a diagram showing the construction of an apparatus for treating the surface of a material to be treated according to this embodiment. In the surface treatment apparatus for a treated material according to this embodiment, an electrode 2 is placed in a vacuum chamber 1, an inert gas 10 is introduced into the vacuum chamber 1, and the surface treatment is performed on the bonding surface of a treated material 3. In the vacuum chamber 1, a holding member (roll) 4, a pair of rollers 11 for forming a processed surface, an unwinding roll 12, and a winding roll 13 are arranged. The surface treatment step for the adhesion surface of the material to be treated 3 to which the thin film is to be adhered is carried out before the film formation step for adhering the thin film to the surface of the material to be treated 3. The material to be treated 3 is fed in the order of the unwinding roll 12, the pair of treatment surface forming rollers 11, the holding member 4, and the take-up roll 13, and is moved at a predetermined speed by the holding member 4. The holding member 4 is connected to a ground electrode. Therefore, the material to be treated 3 is at ground potential (0 V) via the holding member 4. The material to be treated 3 is spaced apart from the holding member 4 between the pair of treatment surface forming rollers 11. With respect to the treatment surface of the material to be treated 3 in the spaced apart state, the holding member 4 is positioned on one side and the electrode 2 is positioned on the other side.

[0020] The electrode 2 is connected to a high frequency power source (Rf power source) 6 via a matching box 5 . The high frequency power supply 6 periodically applies a negative potential to the electrode 2. For example, the high frequency power supply 6 applies a voltage between -160 V and 0 V to the electrode 2. The applied output of the high frequency power supply 6 is set to 2 kW to 10 kW. The cable connecting the matching box 5 and the electrode 2 is electrically insulated from the chamber forming the vacuum chamber 1 by an insulating member 7 .

[0021] When the negative potential is not applied, the inert gas 10 in plasma form acts on the treatment surface of the material 3 to be treated, which is spaced apart from the holding member 4 . Since the material to be treated 3 is spaced apart from the holding member 4 between the electrode 2 and the holding member 4, the temperature at the treatment surface of the material to be treated 3 can be increased, and more functional groups can be generated on the adhesive surface without roughening the surface of the adhesive surface of the material to be treated 3. Even if the temperature at the holding member 4 is about 150°C, by separating the material to be treated 3 from the holding member 4, the temperature can be raised to 200°C to 300°C by the inert gas 10 that has been converted into plasma. In addition, the tension on the treatment surface of the material to be treated 3 can be adjusted by the unwinding roll 12 and the winding roll 13.

[0022] It is preferable that the electrode 2 is a plate-shaped electrode 2 made of a material that is difficult to etch. By using a material that is difficult to etch for the plate-shaped electrode 2, it is possible to prevent the adhesive surface from being affected by substances that fly out of the electrode 2. Examples of the material that can be used for the electrode 2 that is difficult to etch include tungsten, zirconium, molybdenum, and tantalum. Note that by using a magnetron electrode as the electrode 2, electrons are trapped, which makes it possible to prevent the temperature of the material 3 from rising. The pressure inside the vacuum chamber 1 is preferably 10 Pa or less. By setting the degree of vacuum to 10 Pa or less, the kinetic energy of the inert gas 10 can be easily adjusted.

[0023] Figure 2 is a photograph showing the results of surface treatment when a PTFE (polytetrafluoroethylene) sheet is used as the material to be treated, with Figure 2(a) being a photograph of this example in which treatment was carried out using the apparatus shown in Figure 1, and Figure 2(b) being a photograph of a comparative example in which treatment was carried out using the apparatus shown in Figure 6. In both this example and the comparative example, the applied output of the high-frequency power supply 6 was 2.1 kW, the pressure inside the vacuum chamber 1 was 0.3 Pa, the inert gas 10 was N2, and H2O was introduced into the vacuum chamber 1 together with N2. In Figure 2(b), wrinkles have occurred, whereas in Figure 2(a), wrinkles have been suppressed.

[0024] Figure 3 shows the results of a peel test when a PTFE (polytetrafluoroethylene) sheet was used as the material to be treated. In this example, treatment was carried out using the apparatus shown in Figure 1, and in the comparative example, treatment was carried out using the apparatus shown in Figure 6. In both this example and the comparative example, the applied output of the high-frequency power supply 6 was 2.1 kW, the pressure inside the vacuum chamber 1 was 0.3 Pa, the inert gas 10 was N2, and H2O was introduced into the vacuum chamber 1 together with N2.

[0025] In each of the examples and comparative examples, after surface treatment, a film was formed by sputtering, and then a copper thin film having a thickness of 25 μm was formed by wet electrolytic plating. The copper thin film is cut into 20mm x 100mm pieces and then slit into 2mm pieces. 90 A peel test was conducted using [N / 2mm]. For a copper thin film with a total length of 1 m, the downstream test position is designated as peeling position A and the upstream test position is designated as peeling position B. F 90 [N / 2mm] is the force when the copper thin film is pulled in a direction at 90 degrees to the adhesive surface of the material to be treated 3, and is the tensile force [N] per 2 mm width, and indicates the adhesive strength of the copper thin film to the material to be treated 3. 90 If [N / 2mm] exceeds 2 [N / 2mm], cohesive peeling, in which the vapor-deposited film formed on the material to be treated 3 peels off from the material to be treated 3, begins to occur. As shown in FIG. 3, in the copper thin film according to this embodiment, the average value (AVE) is F 90 [N / 2mm] exceeds 2 [N / 2mm], while the average value (AVE) of the copper thin film according to the comparative example is F 90 [N / 2mm] is below 0.2[N / 2mm]. Therefore, in the copper thin film according to the present invention, more N—C=0 bonding groups are formed than in the comparative example.

[0026] An apparatus for treating the surface of a workpiece according to another embodiment of the present invention will now be described. FIG. 4 is a diagram showing another embodiment of the surface treatment device for treated materials, in which FIG. 4(a) is a diagram showing the device from the side, and FIG. 4(b) is a diagram showing the device from the direction A shown in FIG. 4(a). In the surface treatment apparatus for a treated material according to this embodiment, an electrode 2 is placed in a vacuum chamber 1, an inert gas 10 is introduced into the vacuum chamber 1, and the surface treatment is performed on the bonding surface of a treated material 3. In the vacuum chamber 1, a holding member (transport roller) 4 and a substrate holder 14 are arranged. The surface treatment step for the adhesion surface of the material to be treated 3 to which the thin film is to be adhered is carried out before the film formation step for adhering the thin film to the surface of the material to be treated 3. The material to be treated 3 is moved at a predetermined speed by a holding member 4. The holding member 4 is connected to a ground electrode. Therefore, the material to be treated 3 is at ground potential (0 V) via the holding member 4. The substrate holder 14 separates the material 3 from the holding member 4. The electrode 2 is positioned opposite the processing surface of the material 3 which is separated from the holding member 4.

[0027] The electrode 2 is connected to a high frequency power source (Rf power source) 6 via a matching box 5 . The high frequency power supply 6 periodically applies a negative potential to the electrode 2. For example, the high frequency power supply 6 applies a voltage between -160 V and 0 V to the electrode 2. The applied output of the high frequency power supply 6 is set to 2 kW to 10 kW. The cable connecting the matching box 5 and the electrode 2 is electrically insulated from the chamber forming the vacuum chamber 1 by an insulating member 7 .

[0028] When the negative potential is not applied, the inert gas 10 in plasma form acts on the treatment surface of the material 3 to be treated, which is spaced apart from the holding member 4 . Since the material to be treated 3 is spaced apart from the holding member 4 at the position corresponding to the electrode 2, the temperature at the treatment surface of the material to be treated 3 can be increased, and more functional groups can be generated on the adhesive surface without roughening the surface of the adhesive surface of the material to be treated 3. Even if the temperature at the holding member 4 is about 150°C, by separating the material to be treated 3 from the holding member 4, the temperature can be raised to 200°C to 300°C by the inert gas 10 that has been converted into plasma.

[0029] The electrode 2 is preferably a plate electrode 2 made of a material that is difficult to etch. By using a material that is difficult to etch for the plate electrode 2, it is possible to prevent the adhesive surface from being affected by substances that fly out of the plate electrode 2. Examples of materials that can be used as the material that is difficult to etch include tungsten, zirconium, molybdenum, and tantalum. Note that by using a magnetron electrode as the plate electrode 2, electrons are trapped, which makes it possible to prevent the temperature of the material 3 from rising. The pressure inside the vacuum chamber 1 is preferably 10 Pa or less. By setting the degree of vacuum to 10 Pa or less, the kinetic energy of the inert gas 10 can be easily adjusted.

[0030] The test results when a surface treatment was performed on a glass sheet using the device shown in FIG. 4 will be described. In this example, surface treatment was performed using the apparatus shown in Figure 4, while no surface treatment was performed in the comparative example. In this example, the applied output of the high frequency power supply 6 was 2.1 kW, the pressure inside the vacuum chamber 1 was 0.3 Pa, the inert gas 10 was N2, and H2O was introduced into the vacuum chamber 1 together with N2. In this example, after surface treatment, a film was formed by sputtering, and then a 25 μm thick copper thin film was formed by wet electroplating. In the comparative example, no surface treatment was performed, and a film was formed by sputtering, and then a 25 μm thick copper thin film was formed by wet electroplating. 90 A peel test was carried out using [N / cm]. In the comparative example where no surface treatment was performed, the resistance was 0 [N / cm], whereas in the present example where surface treatment was performed, the resistance was 2.5 [N / cm].

[0031] Thus, according to the surface treatment method of the present invention, when a negative potential is applied, the plasmatized inert gas 10 moves toward the electrode 2 with high kinetic energy. When a negative potential is not applied, the plasmatized inert gas 10 acts on the bonding surface of the workpiece 3 with low kinetic energy. This allows functional groups to be generated on the bonding surface without roughening the surface of the workpiece 3, thereby enhancing the adhesion of the thin film to the bonding surface during the film formation process. Furthermore, when a copper thin film is bonded to the workpiece 3 surface-treated by the surface treatment method of the present invention, the copper thin film can be firmly adhered and a smooth copper thin film can be formed, thereby reducing the surface resistance of the copper thin film and reducing power loss due to high frequency waves in the copper thin film. Furthermore, when pattern etching is performed on the workpiece 3 on which the copper thin film has been formed, the smooth etched edge allows for the formation of a fine pattern, improving pattern accuracy. Furthermore, in conventional devices, the workpiece 3 is etched by the inert gas 10 with high kinetic energy E2, which contaminates the inside of the vacuum chamber 1, necessitating cleaning, and the film formation process cannot be carried out in the same vacuum chamber 1. However, according to the method for surface treatment of a workpiece of the present invention, the inert gas 10 with high kinetic energy E2 is not applied to the workpiece 3, so there is no contamination, and the film formation process can be carried out in the same vacuum chamber 1. Furthermore, in conventional devices, the high-frequency power supply (Rf power supply) 6 must be connected to the holding member 4, which complicates the configuration for high-voltage and high-frequency insulation, and therefore restricts the width of the holding member 4. However, with the workpiece surface treatment device of the present invention, such restrictions do not apply.

[0032] The material to be treated 3 may be a sheet fed individually, or may be a resin plate having a certain thickness. For example, plastic materials are sometimes called films when they are less than 0.25 mm thick and sheets when they are 0.25 mm or thicker, but the material to be treated 3 to be treated in the present invention is not affected by thickness, and the fluororesin sheet and PTFE sheet in this example can be used even if they are less than 0.25 mm thick, and the LCP film in this example can be used even if they are 0.25 mm or thicker. [Industrial Applicability]

[0033] This invention is suitable for tetrafluoroethylene resins such as PTFE, fluororesins such as PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer), and LCP (liquid crystal polymer), and can also be applied to the surface treatment of glass sheets, metal foils, silicon substrates, and plastic films such as polyimide films. [Explanation of symbols]

[0034] 1 Vacuum chamber 2 electrodes (plate electrodes) 3. Materials to be treated 4 Retaining member 5 Matching Boxes 6 High frequency power supply (Rf power supply) 7 Insulating material 10 Inert gas 11 Treatment surface forming roller 12 Unwinding roll 13 Take-up roll 14 Substrate holder

Claims

1. A surface treatment method for a treated material, which comprises, before a film formation step of adhering a thin film to a surface of the treated material, performing a surface treatment step on an adhesion surface of the treated material to which the thin film is to be adhered, An inert gas is introduced into the vacuum chamber in which the electrodes are placed. The material to be treated is set to a ground potential, A negative potential is applied to the electrode by a high frequency power source that periodically applies a negative potential; The material to be treated is spaced apart from the holding member between the electrode and the holding member, The inert gas in plasma form is applied to the treatment surface of the workpiece that is spaced apart from the holding member when the negative potential is not applied. A surface treatment method for a workpiece, comprising:

2. A plate electrode is used as the electrode, The plate electrode is made of a material that is difficult to etch.

2. The method for treating a surface of a workpiece according to claim 1.

3. The pressure inside the vacuum chamber is set to 0.1 Pa or more and 10 Pa or less.

2. The method for treating a surface of a workpiece according to claim 1.

4. The material to be treated is a fluororesin sheet, and the thin film is a copper thin film.

4. The method for treating a surface of a workpiece according to claim 1.

5. The material to be treated is a PTFE sheet.

5. The method for treating a surface of a workpiece according to claim 4.

6. The material to be treated is an LCP film, and the thin film is a copper thin film.

4. The method for treating a surface of a workpiece according to claim 1.

7. The inert gas is N ２ year, In the vacuum chamber, ２ Together with H ２ Introducing 0 2. The method for treating a surface of a workpiece according to claim 1.

8. A surface treatment apparatus for a treated material, which comprises: an electrode, a holding member, and a pair of rollers for forming a treated surface disposed in a vacuum chamber; and an inert gas is introduced into the vacuum chamber to perform a surface treatment on an adhesive surface of the treated material, The holding member is at ground potential, The electrodes are energized by a high frequency power source that periodically applies a negative potential, The processing material is spaced apart from the holding member between the pair of processing surface forming rollers, The holding member is positioned on one side of the treatment surface of the treatment object in the spaced apart state, and the electrode is positioned on the other side.

1. A surface treatment device for a material to be treated.

9. A plate electrode is used as the electrode, The plate electrode is made of a material that is difficult to etch. The surface treatment device for a workpiece according to claim 8 .

10. The material to be treated is brought into close contact with the holding member downstream of the pair of rollers for forming a treated surface. The surface treatment device for a workpiece according to claim 8 .

Images