Component for plasma processing apparatus, method for manufacturing component for plasma processing apparatus, electrostatic chuck, and fiber structure for component for plasma processing apparatus

Abstract

To provide a plasma resistant structure, an electrostatic chuck, an edge ring, a fiber structure, and a member for a plasma processing apparatus, which have long life, and a method for manufacturing such a plasma resistant structure and a method for repairing a member for a plasma processing apparatus.SOLUTION: A plasma resistant structure is provided with a first member 2, a second member 3, an intermediate member 4 arranged between the first member 2 and the second member 3, and a plasma protective material 5 including fibers. At least one of the first member 2 and the second member 3 has plasma resistance, and the plasma protective material 5 including fibers is arranged on an outer surface side of a plasma resistant structure 1 at the ends of the intermediate member 4.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a plasma-resistant structure, a method for manufacturing a plasma-resistant structure, an electrostatic chuck, an edge ring, a fiber structure, a member for a plasma processing apparatus, and a method for repairing a member for a plasma processing apparatus. [Background technology]

[0002] Conventionally, etching apparatuses that dry-etch an object using plasma have been used as semiconductor manufacturing equipment, and in these etching apparatuses, electrostatic chucks are used to fix the object using static electricity. In the electrostatic chuck, a holding member that fixes and holds the object and a base that holds the holding member are bonded by a bonding layer, and a plasma protection layer that reduces damage to the bonding layer by plasma is bonded to the outer surface of the bonding layer (Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-165776 [Patent Document 2] Patent Publication No. 2021-44303 Summary of the Invention [Problem to be solved by the invention]

[0004] The plasma protection layers described in Patent Documents 1 and 2 are formed from a thermosetting resin or an elastomer, and further improvements are required in terms of plasma resistance, etc. Similarly, in order to maintain hermeticity in a sealed space using plasma in a plasma processing apparatus, etc., further improvements are required in terms of plasma resistance, etc. Such improvements are expected to extend the life of electrostatic chucks, plasma processing apparatuses, etc.

[0005] An object of the present invention is to provide a long-life plasma-resistant structure, an electrostatic chuck, an edge ring, a fiber structure, a member for a plasma processing apparatus, a method for manufacturing such a plasma-resistant structure, and a method for repairing a member for a plasma processing apparatus. [Means for solving the problem]

[0006] The plasma-resistant structure of the present disclosure includes: A plasma-resistant structure including a first member, a second member, an intermediate member disposed between the first member and the second member, and a plasma protective material including fibers, At least one of the first member and the second member has plasma resistance, The plasma protective material containing the fiber is characterized in that it is disposed on the outer surface side of the plasma resistant structure at the end of the intermediate member.

[0007] In the plasma-resistant structure of the present disclosure, The plasma protective material containing the fiber may be disposed on the outer periphery of the intermediate member.

[0008] In the plasma-resistant structure of the present disclosure, The direction in which the fibers extend may be along the outer periphery of the intermediate member.

[0009] In the plasma-resistant structure of the present disclosure, The plasma protective material containing fibers may include a fiber structure made of fibers.

[0010] In the plasma-resistant structure of the present disclosure, The fiber structure may extend along an outer periphery of the intermediate member.

[0011] In the plasma-resistant structure of the present disclosure, The intermediate member may be a bonding layer.

[0012] In the plasma-resistant structure of the present disclosure, The length of the fiber in the extending direction is longer than the outer periphery of the intermediate member, The fiber may be wound around the outer periphery of the intermediate member.

[0013] In the plasma-resistant structure of the present disclosure, a length of the fiber structure in an extending direction is longer than an outer periphery of the intermediate member; The fiber structure may be wound around the outer periphery of the intermediate member.

[0014] In the plasma-resistant structure of the present disclosure, The fibers may be inorganic fibers.

[0015] In the plasma-resistant structure of the present disclosure, The fibrous structure may include at least one of a twisted yarn, a nonwoven fabric, a mesh, or a woven fabric.

[0016] The electrostatic chuck of the present disclosure comprises: The plasma-resistant structure of the present disclosure is provided, The first member is a holding member that holds an object to be held, and the second member is a base that holds the holding member.

[0017] In the electrostatic chuck of the present disclosure, The outermost periphery of the holding member may be located outside the outermost point of the plasma protection material.

[0018] In the electrostatic chuck of the present disclosure, The outermost periphery of the base may be located outside the outermost point of the plasma protection material.

[0019] The edge ring of the present disclosure is The plasma-resistant structure of the present disclosure is provided.

[0020] The member for a plasma processing apparatus according to the present disclosure includes: The plasma-resistant structure of the present disclosure is provided.

[0021] The fiber structure of the present disclosure comprises: A fiber structure having fibers, A plasma-resistant structure including a first member, a second member, an intermediate member disposed between the first member and the second member, and the fiber structure of the present disclosure, The intermediate member is characterized in that it is disposed along the outer periphery of the intermediate member.

[0022] The method for manufacturing a plasma-resistant structure according to the present disclosure includes: A method for manufacturing a plasma-resistant structure according to the present disclosure, comprising: a first member; a second member; an intermediate member disposed between the first member and the second member; and a fiber structure having fibers, the method comprising: disposing an intermediate member between the first member and the second member; and winding the fiber structure around the outer periphery of the intermediate member.

[0023] The method for repairing a member for a plasma processing apparatus according to the present disclosure includes: A method for repairing a member for a plasma processing apparatus, the method comprising: a first member; a second member; and an intermediate member disposed between the first member and the second member, the method comprising: The method is characterized by including a step of winding a fiber structure having fibers around the outer periphery of the intermediate member. [Effects of the Invention]

[0024] According to the present disclosure, there are provided a long-life plasma-resistant structure, an electrostatic chuck, an edge ring, a fiber structure, a member for a plasma processing apparatus, a method for manufacturing such a plasma-resistant structure, and a method for repairing a member for a plasma processing apparatus. [Brief explanation of the drawings]

[0025] [Figure 1] 1 is a cross-sectional view showing a schematic configuration of a plasma-resistant structure according to an embodiment of the present disclosure. [Figure 2] FIG. 10 is a cross-sectional view showing another schematic configuration of a plasma-resistant structure according to an embodiment of the present disclosure. [Figure 3] 1A and 1B are diagrams illustrating an outline of a method for repairing a plasma-resistant structure (electrostatic chuck) according to an embodiment of the present disclosure. [Figure 4]1 is a cross-sectional view illustrating a schematic configuration of an electrostatic chuck according to an embodiment of the present disclosure. [Figure 5] FIG. 10 is a cross-sectional view illustrating another schematic configuration of an electrostatic chuck according to an embodiment of the present disclosure. [Figure 6] FIG. 1 is a diagram illustrating a schematic configuration of an edge ring according to an embodiment of the present disclosure. [Figure 7] FIG. 1 is a schematic diagram illustrating an edge ring disposed to surround an electrostatic chuck according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0026] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings, but the invention according to the present disclosure is not limited thereto.

[0027] [Plasma-resistant structure] 1 and 2 are cross-sectional views showing a schematic configuration of a plasma-resistant structure according to an embodiment of the present disclosure. As shown in FIG. 1, the plasma-resistant structure 1 includes a first member 2, a second member 3, an intermediate member 4 disposed between the first member 2 and the second member 3, and a plasma protective material 5 containing fibers. At least one of the first member 2 and the second member 3 is plasma-resistant. The plasma protective material 5 containing fibers (hereinafter simply referred to as the plasma protective material 5) is disposed on the outer surface side of the plasma-resistant structure 1 at the end of the intermediate member 4. Here, the "outer surface side" of the plasma-resistant structure 1 refers to the side that is in contact with the external atmosphere. In FIG. 6(B), which is a cross-sectional view showing a schematic configuration of an edge ring according to an embodiment of the present disclosure, plasma protective materials 45a and 45b (plasma protective materials 5) are disposed on the outer and inner peripheries of the edge ring 41 (plasma-resistant structure 1) at the end of the intermediate member 44. Both the outer and inner peripheries are located on the outer surface side of the plasma-resistant structure 1 (edge ​​ring 41) that is in contact with the external atmosphere.

[0028] (First member 2 and second member 3) In the plasma-resistant structure 1, it is sufficient that either the first member 2 or the second member 3 has plasma resistance. That is, only the first member 2 may be formed from a plasma-resistant material (plasma-resistant material), or only the second member 3 may be formed from a plasma-resistant material. Forming both the first member 2 and the second member 3 from a plasma-resistant material is preferable because it can more effectively protect the intermediate member 4 disposed therebetween from plasma. The first member 2 and / or the second member 3 may be made of a plasma protection material 5 containing fiber, as described below. As with the first member 2a of the plasma-resistant structure 1a shown in FIG. 2, the first member 2 and / or the second member 3 may be made of a plasma protection material 5 containing fiber. Note that the first member 2 and / or the second member 3 may be composed of multiple components.

[0029] Examples of plasma-resistant materials include organic and inorganic materials. Preferred organic materials include, but are not limited to, nylon, polyimide, polyamide, polyester, acrylic, polyolefin, aromatic polyether ketone, polyphenylene sulfide, fluororesin, polyvinyl alcohol, ethylene-vinyl alcohol resin, phenolic resin, vinyl chloride, and silicone resin. Preferred inorganic materials include, but are not limited to, metals and ceramics. Examples of inorganic materials include materials containing at least one of yttrium, aluminum, zirconium, hafnium, calcium, magnesium, nickel, titanium, and silicon, and may be oxides, hydroxides, carbides, or mixtures (minerals, etc.) of these elements, and the mixture may contain hydroxyapatite.

[0030] (Intermediate part 4) The intermediate member 4 is not particularly limited, and may be a member having functions such as joining, sealing, insulating, heat insulating, heat conducting, or conducting (hereinafter also referred to as a "functional member"), or may be a filler or space that is not intended to have any function. Therefore, the material of the intermediate member 4 is also not limited. The shape of the intermediate member 4 is also not particularly limited, and may be hollow, layered, or the like. Specific examples of the intermediate member 4 include a sealing material (O-ring), a bonding layer (bonding layer 14 in FIG. 4), etc.

[0031] (Joining layer) The bonding layer, which is one of the functional members, is not particularly limited, and metal, adhesive material (resin), etc. can be used. As the metal, from the viewpoint of workability, brazing materials (silver brazing, copper brazing, copper alloy brazing, aluminum brazing, nickel brazing, activated silver brazing, titanium brazing, solder materials, etc.) can be used. Among these, the most appropriate one can be selected in relation to the properties (thermal expansion, thermal conductivity, etc.) of the first member 2 and the second member 3 to be bonded.

[0032] (Adhesive material) The bonding layer (functional member) may be an adhesive material. Examples of adhesive materials include silicone resin, fluororesin, acrylic resin, polyimide resin, polyamide resin, polyester resin, polyolefin resin, and adhesive materials containing fillers. From the viewpoint of adhesiveness and heat resistance, silicone resin, fluororesin, acrylic resin, polyimide resin, and adhesive materials containing fillers are preferred, silicone resin, acrylic resin, epoxy resin, and adhesive materials containing fillers are more preferred, and silicone resin and silicone resin containing fillers are even more preferred, but are not limited to these.

[0033] (Sealing material) The intermediate member 4 may be a sealing material. Examples of sealing materials include silicone, polyimide, aromatic polyether ketone, fluororesin, elastomer, and a mixture of these sealing materials with a filler. From the viewpoint of plasma resistance and heat resistance, fluororesin and a mixture of fluororesin and a filler are preferred, but are not limited to these. The sealing material may be in the shape of a ring (e.g., an O-ring), or may be formed by pouring uncured curable liquid resin into any shape.

[0034] (Plasma protection material 5) The plasma protection material 5 includes fibers and is formed from a plasma-resistant material. The plasma protection material 5 protects the intermediate member 4, such as a resin material, from the plasma space, isolating or distancing the resin material from the plasma space. The plasma protection material 5 blocks the path to the intermediate member 4, increasing the distance the plasma must travel to the intermediate member 4, deactivating the plasma, and reducing its impact on the intermediate member 4. When the plasma protection material 5 is made of fibers, voids are formed between and around the fibers. These voids allow the material to adapt to dimensional changes in the external environment and relieve stress (cushioning properties). For example, the plasma protection material 5 can adapt to dimensional changes in the first member 2 and the second member 3 due to heating and relieve stress caused by the dimensional changes, thereby extending the life of the plasma-resistant structure 1. Furthermore, when the plasma protection material 5 is made of ceramics or other materials mixed with fibers, the fibers act as aggregates for the ceramics, increasing the stress-resistance of the plasma protection material 5. As a result, stress resistance against external dimensional changes increases, and the life of the plasma-resistant structure 1 can be extended.

[0035] The fibers constituting the plasma protective material 5 are preferably inorganic fibers, examples of which include those containing at least one of yttrium, aluminum, zirconium, hafnium, calcium, magnesium, nickel, titanium, and silicon. The plasma protective material 5 may also be made of, but is not limited to, oxides, hydroxides, or carbides of these elements, fibers in which the surface of organic fibers is coated with these inorganic compounds, or mixtures thereof. Further, commercially available inorganic fibers include Fineflex manufactured by Nichias Corporation, Isowool manufactured by Isolite Industries Co., Ltd., Ibiwool manufactured by Ibiden Co., Ltd., Superwool manufactured by Shin-Nichika Thermal Ceramics Co., Ltd., Nextel manufactured by 3M Corporation, N-Silica manufactured by Nippon Glass Fiber Industries Co., Ltd., BelCo Tex manufactured by BelChem, Nitibi Alf manufactured by Nitibi Co., Ltd., Almax manufactured by Mitsui Mining Materials Co., Ltd., and Saffi Examples of such fibers include SAFFIL manufactured by Fibres, Denka Arsen manufactured by Denka, Rubil manufactured by Nichias Corporation, Maftec manufactured by Mitsubishi Chemical Industrial Products, Altex manufactured by Sumitomo Chemical Co., Ltd., Rockfiber manufactured by Nitto Boseki, MG Mightywool manufactured by Nichias Corporation, S-fiber manufactured by Nippon Rockwool Industries, Ltd., Rockfil manufactured by Lapinas, Nicalon manufactured by Nippon Carbon Co., Ltd., Tyranno Fiber manufactured by Ube Industries, Ltd., Naslon manufactured by Nippon Seisen Co., Ltd., Bekipor manufactured by Bekaert, BOLFUR manufactured by Unitika Ltd., SENCY manufactured by Unitika Ltd., Unitika Glass Fiber manufactured by Unitika Ltd., Nittobo Glass Fiber manufactured by Nitto Boseki, E-glass manufactured by Nippon Electric Glass Co., Ltd., ARG manufactured by Nippon Electric Glass Co., Ltd., and Alfiber manufactured by Asahi Glass Co., Ltd.

[0036] The plasma protective material 5 is arranged on the outer surface side of the plasma resistant structure 1 at the end of the intermediate member 4. The plasma protective material 5 may be arranged on the outer periphery of the intermediate member 4, and the plasma protective material 5 is preferably provided along the outer periphery of the intermediate member 4. The direction in which the fibers of the plasma protective material 5 extend is preferably along the outer periphery of the intermediate member 4.

[0037] The length of the plasma protective material 5 in the fiber extension direction is longer than the outer periphery of the intermediate member 4, and the fiber may be wound around the outer periphery of the intermediate member 4 or may be (tightly) wound around the outer periphery of the intermediate member 4 (including the case where the fiber is present around the intermediate member once or multiple times as a result of these). Here, the plasma protective material 5 may be wound directly around the intermediate member 4, or may be wound sandwiched between the first member 2 and the second member 3 (i.e., the plasma protective material 5 may be separated from the intermediate member 4). In this specification, the term "fiber" refers to a filamentous substance, and its structure (shape) is not particularly limited. However, the diameter of the fiber of the plasma protective material 5 is preferably 0.01 mm to 0.2 mm, more preferably 0.02 mm to 0.1 mm. An average fiber diameter within these ranges is preferable from the viewpoints of stress relaxation property and plasma resistance. The aspect ratio (length / diameter) of the fiber, although depending on the application, is preferably 1,000 to 2,200,000, more preferably 28,000 to 2,200,000, and even more preferably 140,000 to 1,200,000. This is because the longer the fiber length (aspect ratio), the better the plasma resistance, durability, and particle resistance tend to be.

[0038] The structure (shape) of the plasma protective material 5 containing fibers is not particularly limited, but the plasma protective material 5 may be a fiber structure made of fibers. The fiber structure may be a twisted yarn, nonwoven fabric, woven fabric, or mesh-like structure, or may be composed of multiple components (fibers, etc.) with gaps (voids). Known methods for manufacturing these fiber structures can be used depending on the intended use. For example, twisted yarn can be manufactured by twisting multiple fibers together, and nonwoven fabric can be manufactured by, but not limited to, a dry method or a wet method. The "voids" in the plasma protective material 5 are also not particularly limited as long as they can achieve the stress relaxation properties and long life described above. For example, the plasma protective material 5 may be formed by winding a single fiber made of the plasma-resistant material described above around the outer periphery of the intermediate member 4. In this case, the voids between the wound fibers can follow dimensional changes in the first member 2 and the second member 3 and relieve stress caused by the dimensional changes. As a result, a plasma-resistant structure 1 with a long life can be provided.

[0039] Furthermore, the plasma protective material 5 (fiber structure) preferably includes fiber bundles. This means that the stress relaxation, strength, and ease of handling (including placement and removal) are improved by bundling fibers compared to when the material is simply fibers. The fibers in the fiber bundles may be of the same or different materials and have different dimensions, but it is preferable that they are aligned in direction and have approximately the same dimensions. The number of fibers in the bundles is not particularly limited and can be appropriately determined taking into account the thickness of the intermediate member 4, the fiber diameter, and the like. For example, it is preferable that the fiber bundles made of inorganic fibers are sandwiched between the first member 2 and the second member 3. By sandwiching the fiber bundles between the first member 2 and the second member 3, the intermediate member 4 is isolated from the plasma atmosphere and the fiber bundles are less likely to fall off. Selecting and setting the number of fibers in this way can extend the life of the plasma-resistant structure 1. Furthermore, it is preferable that the fibers in the fiber bundles are bonded to each other to a degree that allows for both shape maintenance and cushioning.

[0040] The extending (extending) direction of the fiber structure also preferably follows the outer periphery of the intermediate member 4; that is, the fiber bundles constituting the plasma protective material 5 also preferably extend along the outer periphery of the intermediate member 4. Furthermore, the direction of each fiber in the fiber bundle also preferably follows the outer periphery of the intermediate member 4. Since the fiber directions are aligned in this way, the fiber bundles as the plasma protective material 5 can be uniformly placed between the first member 2 and the second member 3, thereby reducing the gaps between the first member 2 and the plasma protective material 5 and between the second member 3 and the plasma protective material 5, improving plasma resistance. As a result, the life of the plasma-resistant structure 1 can be extended.

[0041] Furthermore, the length of the plasma protective material 5 in the extending direction of the fiber structure may be longer than the outer periphery of the intermediate member 4, and the fiber structure may be wound around the outer periphery of the intermediate member 4 (FIG. 3). Note that FIGS. 3(A) and 3(B) are examples of a top view and a perspective view of the plasma-resistant structure 1 when the plasma protective material 5 is wound around the outer periphery of the intermediate member 4.

[0042] Furthermore, the fiber bundles contained in the plasma protective material 5 preferably have a twisted yarn shape. If the twisted fibers can move relative to each other within the fiber bundle, both high strength and cushioning properties can be achieved. Furthermore, the high strength of the twisted yarn can increase the strength of the plasma protective material 5 and facilitate the removal of the plasma protective material 5 from the plasma-resistant structure 1. The twisted yarn can also provide stress relief by the fibers loosening within the fiber bundle. The twisting method is not particularly limited, but can be 5 to 360 turns per meter, preferably 20 to 300 turns per meter. Twisting within the above range not only improves the strength and stress relief of the fiber bundle, but also effectively suppresses particle generation during plasma treatment. As a result, a plasma-resistant structure 1 with a long life can be provided. Here, "particles" primarily refers to small fragments generated from the plasma-resistant structure 1 during plasma treatment. Particles may become impurities in the held object W. For example, if the plasma protective material 5 has low strength, the fibers may be broken by plasma treatment and adhere to the held object W as particles. Furthermore, if the intermediate member 4 is not isolated or kept away from the plasma atmosphere by the plasma protection material 5, the intermediate layer may be deteriorated or destroyed by the plasma atmosphere, and may adhere to the workpiece W as particles.

[0043] The diameter of each fiber in the fiber bundle is preferably 0.01 mm to 0.2 mm, more preferably 0.02 mm to 0.1 mm. It is preferable that the average fiber diameter is within these ranges from the viewpoints of stress relaxation and plasma resistance. Furthermore, the aspect ratio of each fiber in the fiber bundle is preferably 500 or more, more preferably 1000 or more, and even more preferably 8000 or more. When each fiber is a long fiber, the stress relaxation of the plasma protective material 5 is improved, resulting in a plasma-resistant structure 1 with a long life. The "diameter" in this specification refers to the average area diameter (e.g., the average value of 20 fibers or fiber bundles) calculated by calculating the cross-sectional area of ​​an arbitrary cross section perpendicular to the extension direction of a fiber or fiber bundle imaged with a microscope (e.g., using known software) and then calculating the diameter of a circle having the same area as the cross-sectional area. Furthermore, the "length" of the fiber bundle in this specification refers to, for example, the average length of 10 arbitrary fibers in the fiber bundle.

[0044] The plasma protective material 5 does not have to be bonded to the first member 2, the second member 3, or the intermediate member 4; for example, a fiber structure (twisted yarn, mesh, nonwoven fabric, metal wire, etc.) may be pushed between the first member 2 and the second member 3 toward the intermediate member 4 as the plasma protective material 5.

[0045] It is preferable that the plasma protective material 5 and the intermediate member 4 are at least partially separated, and more preferably partially separated and partially in close contact (for example, in the electrostatic chuck 21 having a plasma-resistant structure shown in FIG. 5, the side of the plasma protective material 25 that contacts the first member 22 and the side that contacts the second member 23 are separated from the outer peripheral portion 24a of the bonding layer 24, which is the intermediate member). If the plasma protective material 5 is completely separated from the intermediate member 4, there is a risk of it falling off, but by partially separating it and partially in close contact, stress relaxation properties can be improved. As a result, a plasma-resistant structure 1 with a long life can be provided.

[0046] Other embodiments of the present disclosure will be described below, in which the reference numerals of components that are the same as or similar to the components of the plasma-resistant structure 1 have been given the additional numerals 10, 20, 30, 40, etc. (i.e., for example, plasma protection material 15 in FIG. 4 is the same as or similar to plasma protection material 5). Also, in particularly preferred embodiments, the same or similar components may be given different names (for example, edge ring portion 42 and edge ring portion 43 in FIG. 6 correspond to first member 2 and second member 3, respectively, and may be made of plasma-resistant materials, but are given different names). Explanations of these will be omitted as appropriate.

[0047] [Electrostatic chuck 11] According to the present disclosure, there is provided an electrostatic chuck 11 having a plasma-resistant structure 1 as shown in FIG. 4 . That is, in FIG. 4 , the plasma-resistant structure 1 can be a holding member 12 that holds an object W to be held and a base 13 that holds the holding member 12. More specifically, the electrostatic chuck 11 includes the holding member 12 that holds the object W to be held, the base 13 that holds the holding member 12, a bonding layer 14 disposed between the holding member 12 and the base 13, and a plasma protective material 15 containing fibers. The plasma protective material 15 containing fibers is disposed on the outer surface side of the electrostatic chuck 11 at an end of the bonding layer 14. The plasma protective material 15 is resistant to plasma as described below, and can be provided at any desired position on the electrostatic chuck 11 other than the bonding layer 14.

[0048] (holding member 12) The holding member 12 is used to adsorb and hold the object to be held W. The shape of the holding member 12 is not limited, and it can be disc-shaped or rectangular to match the shape of the object to be held W. The dimensions of the holding member 12 can also be set appropriately to match the object to be held W. The "object to be held W" is also not limited, and can include workpieces such as wafers (silicon wafers, quartz wafers, SiC wafers, etc.), flat panel display (FPD) panels and substrates, metal members, film members, resin members (automotive interior materials, etc.), glass members, etc.

[0049] Examples of the holding member 12 include ceramic substrates (alumina, aluminum nitride, yttrium oxide, silicon carbide, etc.), resin substrates, and metal substrates made of aluminum, stainless steel, etc. From the viewpoints of plasma resistance and heat resistance, examples of the resin substrate include polyimide, polyamide, polyamideimide, aromatic polyether ketone, and fluorine-based polymer. The holding member 12 may be a substrate made of two or more types of materials. From the viewpoints of plasma resistance and heat resistance, the holding member 12 is preferably a ceramic substrate, a resin substrate, or a composite substrate made of ceramic and resin.

[0050] The thickness of the holding member 12 is not particularly limited and can be in the range of 0.2 mm to 7 mm. Furthermore, when an internal electrode is provided in the holding member 12 as described below, the thickness of the holding member 12 may be in the range of 3 mm to 10 mm.

[0051] Furthermore, a plurality of protrusions may be provided on the surface of the holding member 12 that holds the workpiece W. By holding (suctioning) the workpiece W on the upper surfaces of these protrusions, the contact area between the holding member 12 and the workpiece W is reduced. As a result, the quality of the workpiece W can be maintained and the life of the electrostatic chuck 11 can be extended. The number, arrangement, shape, height, dimensions, etc. of the protrusions are not particularly limited. From the viewpoint of maintaining the quality of the workpiece W, the shape of the protrusions is preferably disk-shaped or cylindrical, and the top surface of each protrusion is preferably flat. If the shape, height, etc. of the protrusions are as described above, the quality of the workpiece W can be maintained well and an electrostatic chuck 11 with a longer life can be provided.

[0052] (Base 13) The base 13 holds the holding member 12 and also has a cooling function. The shape, material, thickness, etc. of the base 13 can be appropriately designed to suit the application. For example, the material of the base 13 can be ceramic, metal, or a combination thereof. Examples of ceramics include alumina, aluminum nitride, yttrium oxide, silicon carbide, etc., and examples of metals include, but are not limited to, aluminum, stainless steel, etc.

[0053] (Joining layer 14) The bonding layer 14 bonds together the various components, such as the holding member 12 and the base 13. The thickness (height) of the bonding layer 14 is not particularly limited, but is preferably 20 μm to 1000 μm, more preferably 50 μm to 800 μm, and even more preferably 100 μm to 500 μm. If the thickness of the bonding layer 14 is within this range, the bonding layer 14 can adequately withstand the stress caused by dimensional changes in the holding member 12 and the base 13 during heating, and can limit contact between the bonding layer 14 and the plasma atmosphere during the plasma treatment step. As a result, an electrostatic chuck 11 with a longer life can be provided.

[0054] Examples of materials for the bonding layer 14 include metals and adhesive materials (resins). From the viewpoint of workability, brazing materials (silver brazing, copper brazing, copper alloy brazing, aluminum brazing, nickel brazing, activated silver brazing, titanium brazing, solder materials, etc.) can be used as the metal, but are not limited to these. A more appropriate brazing material can be selected depending on the properties (thermal expansion, thermal conductivity, etc.) of the holding member 12 and base 13 to be bonded. Examples of adhesive materials include thermoplastic elastomers, thermosetting elastomers, epoxy resins, urethane resins, polyester resins, polyimide resins, polyamide resins, fluororesins, acrylic resins, silicone resins, urethane resins, and mixtures of these with fillers. From the viewpoint of adhesion and heat resistance, silicone resins, acrylic resins, epoxy resins, and mixtures of these with fillers are preferred, and silicone resins and mixtures of silicone resins with fillers are more preferred.

[0055] The bonding layer 14 may contain a thermally conductive filler. By including a thermally conductive filler, both adhesiveness and thermal conductivity can be achieved, thereby suppressing thermal degradation of the bonding layer 14. As a result, an electrostatic chuck 11 with a long life can be provided. Examples of the thermally conductive filler include, but are not limited to, metal, alumina, aluminum nitride, silicon carbide, boron nitride, carbon black, carbon nanotubes, and diamond. The amount, shape, and the like of the thermally conductive filler are also not particularly limited.

[0056] The present disclosure can also provide an electrostatic chuck 21 as shown in FIG. 5. The bonding layer 24 may be different depending on the position in the surface direction. For example, different types of materials may be used for the central portion 24b and the peripheral portion 24a of the bonding layer 24 (FIG. 5). This allows the holding member 22 and the base 23 to withstand stress caused by dimensional changes during heating.

[0057] (Plasma protection material 15) The plasma protection material 15 serves to isolate or keep away the bonding layer 14 from the plasma atmosphere in order to protect the bonding layer 14, and is preferably provided along the outer periphery of the bonding layer 14.

[0058] The plasma protective material 15 may be a combination of different materials. The plasma protective material 15 may also be a fibrous structure such as twisted yarn as described above.

[0059] (protective material) The electrostatic chuck 11 may further include a protective material (not shown) provided along the outer periphery of the plasma protective material 15. This protective material improves the strength of the plasma protective material 15 and can suppress particles generated from the plasma protective material 15. The protective material can also fix and hold the plasma protective material 15. For stress relief, it is preferable that at least a portion of the protective material is separated from the plasma protective material 15.

[0060] As the material of the protective material, an organic substance such as a resin can be used to hold and fix the plasma protective material 15. Examples of the resin include silicone resin, fluororesin, epoxy resin, polyimide resin, acrylic resin, etc. Furthermore, a plasma-resistant material can be used to protect the bonding layer 14 and the plasma protective material 15, and it is particularly preferable to use alumina, silicon carbide, metal oxide, etc.

[0061] The protective material can also be formed by applying a paste containing inorganic particles, a metal organic compound solution, a metal complex solution, or the like, followed by sintering, or by spraying an inorganic material.

[0062] (others) In the electrostatic chuck 11 according to this embodiment, an internal electrode (not shown) can be provided in the holding member 12 in order to apply a voltage to generate an electrostatic force (Coulomb force) to attract the workpiece W. Alternatively, such an internal electrode may be provided in the base 13.

[0063] The internal electrode is not particularly limited as long as it is made of a conductive material that can generate an electrostatic adsorption force when a voltage is applied. Suitable internal electrodes include, for example, thin films made of metals such as copper, aluminum, gold, silver, platinum, chromium, nickel, and tungsten, and thin films made of at least two metals selected from the above metals. These conductive materials may also be incorporated into ceramic materials. Examples of such thin films of conductive materials include those formed by vapor deposition, plating, sputtering, thermal spraying, etc., and those formed by applying and drying a conductive paste, specifically, metal foils such as copper foil.

[0064] Furthermore, it is preferable that the outermost periphery of the holding member 12 is located outside the outermost point of the plasma protective material 15 (or protective material), and it is more preferable that the outermost periphery of the base 13 is located outside the outermost point of the plasma protective material 15 (or protective material) (FIG. 4). This is because deterioration of the plasma protective material 15 and the protective material due to plasma is suppressed. Furthermore, if the outermost periphery of the holding member 12 is located outside the outermost periphery of the base 13, it is preferable because the base 13 does not interfere with other members such as an edge ring 41 (FIGS. 6 and 7) used together with the electrostatic chuck 11.

[0065] (Manufacturing method and use of electrostatic chuck 11) The electrostatic chuck 11 can be manufactured, for example, as follows. First, the holding member 12 and the base 13 are prepared. As described above, a metal such as copper is patterned on either the holding member 12 or the base 13 to form an internal electrode. Next, the holding member 12 and the base 13 are bonded via a bonding layer 14. This process is also performed in conventional electrostatic chuck manufacturing methods. In conventional electrostatic chucks, after the holding member and the base are bonded via a bonding layer, an O-ring or adhesive (elastomer, acrylic rubber, silicone rubber, fluororubber, thermosetting resin, etc.) is provided. In contrast, in the embodiment of the present disclosure, the plasma protective material 15 described above is provided on the outer surface of the electrostatic chuck 11 at the end of the bonding layer 14. Furthermore, a protective material is appropriately provided along the outer periphery of the plasma protective material 15 (FIG. 4).

[0066] The electrostatic chuck 11 according to the present embodiment generates a Coulomb force by applying a voltage to internal electrodes embedded in the holding member 12 or the base 13, thereby attracting the workpiece W. For example, the electrostatic chuck 11 can be used to attract a wafer (workpiece W) in dry etching or CVD processes in semiconductor manufacturing processes. In particular, in an apparatus or method using plasma, the electrostatic chuck 11 according to the present embodiment can absorb stress due to the difference in expansion and contraction between the holding member 12 and the base 13 even if the holding member 12 or the base 13 becomes hot and expands due to plasma irradiation, for example, if the plasma protective material 5 includes an inorganic fiber structure, voids are generated between the inorganic fibers, thereby absorbing stress due to the difference in expansion and contraction between the holding member 12 and the base 13. As a result, the electrostatic chuck 11 can have a long life. Furthermore, if the plasma protective material 15 is made of ceramics or the like mixed with the above-described fibers, the fibers act as aggregates for the ceramics, increasing the stress resistance of the plasma protective material 15. As a result, the stress resistance to external dimensional changes is improved, thereby extending the life of the electrostatic chuck 11.

[0067] Furthermore, compared to conventional electrostatic chucks, the manufacturing method of electrostatic chuck 11 generally differs in whether or not plasma protection material 15 is provided, and therefore, when repairing a conventional electrostatic chuck, it can be easily manufactured into electrostatic chuck 11 according to the present disclosure ( FIG. 3 ).

[0068] [Edge Ring 41] In addition, one embodiment of the present disclosure provides an edge ring 41 having a plasma-resistant structure as shown in FIGS. 6A and 6B. FIGS. 6A and 6B are a perspective view and a cross-sectional view, respectively, of the edge ring 41. The edge ring 41 of the present disclosure is formed in a ring shape so as to surround the outer periphery of an electrostatic chuck. It is also used in a plasma processing process to uniformly perform plasma processing on a workpiece W, such as a wafer, attracted to the upper surface of the holding member of the electrostatic chuck (FIG. 7). More specifically, in FIG. 6, the edge ring 41 includes an edge ring portion 42, an edge ring portion 43, a bonding layer (intermediate member) 44 disposed between the edge ring portion 42 and the edge ring portion 43, and a plasma protection material 45 containing fibers. The plasma protection material 45 is disposed on the outer surface side of the bonding layer 44 of the edge ring 41. The plasma protection material 45 is resistant to plasma and can be provided at any desired location on the edge ring 41, other than the bonding layer 44.

[0069] (Edge ring parts 42 and 43) The edge ring portions 42 and 43 are components that make up the edge ring 41. The edge ring portions 42 and 43 can be made of, but are not limited to, semiconductors, conductors, insulators, or combinations of two or more of these. By combining these materials as desired, the dielectric properties can be controlled, enabling uniform plasma processing of a wafer or other object W attracted to the upper surface of the holding member of the electrostatic chuck. As a result, the edge ring 41 can have a long life.

[0070] (Joining layer 44) The bonding layer 44 bonds together components such as the edge ring portion 42 and the edge ring portion 43. The thickness (height) of the bonding layer 14 is not particularly limited, but is preferably 20 μm to 1000 μm, more preferably 50 μm to 800 μm, and even more preferably 100 μm to 500 μm. If the thickness of the bonding layer 14 is within this range, the bonding layer 44 can adequately withstand the stress caused by dimensional changes in the edge ring portion 42 and the edge ring portion 43 during heating, and can limit contact between the bonding layer 44 and the plasma atmosphere during the plasma treatment process. As a result, an edge ring 41 with a longer lifespan can be provided.

[0071] The bonding layer 44 and the plasma protective material 45 may be the same as the above-described bonding layer 14 and plasma protective material 15. The edge ring 41 may also be provided with a protective material.

[0072] (Edge Ring 41 manufacturing method and uses) The edge ring 41 can be manufactured, for example, as follows. First, the edge ring portion 42 and the edge ring portion 43 are prepared. At this time, as described above, the edge ring portion 42 and the edge ring portion 43 are bonded via the bonding layer 44. This process is also performed in conventional edge ring manufacturing methods. In conventional edge rings, after the edge ring portion 42 and the edge ring portion 43 are bonded via the bonding layer, an O-ring or adhesive (elastomer, acrylic rubber, silicone rubber, fluororubber, thermosetting resin, etc.) is provided. In contrast, in the embodiment of the present disclosure, the plasma protective material 45 as described above is provided on the outer surface side of the edge ring 41 at the end of the bonding layer 44. Furthermore, a protective material is appropriately provided along the outer periphery of the plasma protective material 45 (not shown).

[0073] As described above, the edge ring 41 according to this embodiment has a long life. Furthermore, in a device or method using plasma, even if the edge ring portion 42 or the edge ring portion 43 becomes hot and expands due to plasma irradiation, for example, if the plasma protective material 45 includes an inorganic fiber structure, voids are generated between the inorganic fibers, which can absorb stress due to the difference in expansion and contraction between the edge ring portion 42 and the edge ring portion 43. As a result, the life of the edge ring 41 can be extended. Furthermore, if the plasma protective material 45 is made by mixing the above-described fibers with ceramics or the like, the fibers act as aggregates for the ceramics, increasing the stress resistance of the plasma protective material 45. As a result, stress resistance to external dimensional changes is improved, and the life of the edge ring 41 can be extended.

[0074] Furthermore, compared to conventional edge rings, the manufacturing method of edge ring 41 generally differs in whether or not a plasma protective material 45 is provided, and therefore edge ring 41 according to the present disclosure can be easily manufactured when repairing a conventional electrostatic chuck.

[0075] [Plasma treatment equipment components] Although not shown, one embodiment of the present disclosure can provide a member for a plasma processing apparatus having a plasma-resistant structure. Because plasma processing apparatuses are exposed to a plasma atmosphere, their housings and components installed inside the apparatus (electrostatic chucks, edge rings, inner walls of the apparatus, etc.) also require plasma resistance. For example, plasma processing apparatuses used in semiconductor device manufacturing processes are detachable to simultaneously load and unload workpieces such as wafers and maintain a vacuum inside, and O-rings and other sealing materials are used in the detachable parts. Providing these detachable parts with the plasma-resistant structure of the present disclosure can extend the life of the plasma processing apparatus. The "member" for a plasma processing apparatus in the present disclosure refers to a plasma processing apparatus that has the plasma-resistant structure of the present disclosure. Examples include a housing and a detachable part. Furthermore, the plasma processing apparatus itself may have the plasma-resistant structure of the present disclosure as a part thereof. That is, one embodiment of the present disclosure can provide a plasma processing apparatus having a plasma-resistant structure.

[0076] When a crack exists in the plasma-resistant wall of a plasma processing apparatus, this wall can be made into a first member 2 and a second member 3, and the plasma protective material 5 and intermediate member 4 can be inserted into the crack between the first member 2 and the second member 3 as a filler or adhesive (to bond the plasma protective material 5 to the first member 2 and the second member 3). In this way, the plasma protective material 5 of the present disclosure can also be used as a repair material.

[0077] (Method for manufacturing and repairing members for plasma processing equipment) The member for a plasma processing apparatus (plasma-resistant structure 1) can be manufactured, for example, as follows. First, a first member 2 and a second member 3 are prepared. Then, as described above, an intermediate member 4 is placed between the first member 2 and the second member 3. This process is also performed in conventional manufacturing methods for members for plasma processing apparatuses. In conventional members for plasma processing apparatuses, the first member and the second member are joined via a bonding layer, and then an O-ring or adhesive (elastomer, acrylic rubber, silicone rubber, fluororubber, thermosetting resin, etc.) is provided. In contrast, in the embodiment of the present disclosure, the plasma protective material 5 as described above is provided on the outer surface side of the member for a plasma processing apparatus at the end of the intermediate member 4. For example, the plasma protective material 5 can be installed by winding a fiber structure having fibers around the outer periphery of the intermediate member 4. Furthermore, a protective material is appropriately provided around the outer periphery of the plasma protective material 5 (not shown). The repair method for a member for a plasma processing apparatus (plasma-resistant structure 1) includes a step of winding a fiber structure around the outer periphery of the intermediate member, as in the manufacturing method for members for plasma processing apparatuses.

[0078] The plasma-resistant structure 1, electrostatic chuck 11, edge ring 41, and member for a plasma processing apparatus according to the present embodiment, configured as described above, include a first member 2, a second member 3, an intermediate member 4 disposed between the first member 2 and the second member 3, and a plasma protective material 5 containing fiber. At least one of the first member 2 and the second member 3 has plasma resistance, and the plasma protective material 5 containing fiber is disposed on the outer surface side of the plasma-resistant structure 1 at the end of the intermediate member 4.

[0079] Furthermore, a fiber structure that is one embodiment of the present disclosure has fibers, and in a plasma-resistant structure 1 that includes a first member 2, a second member 3, and an intermediate member 4 arranged between the first member 2 and the second member 3, this fiber structure is arranged along the outer periphery of the intermediate member 4.

[0080] Furthermore, a method for manufacturing a plasma-resistant structure 1 according to one embodiment of the present disclosure includes a step of placing an intermediate member between the first member 2 and the second member 3, and a step of winding a fiber structure around the outer periphery of the intermediate member 4.

[0081] Furthermore, according to a method for repairing a member for a plasma processing apparatus which is one embodiment of the present disclosure, the member for a plasma processing apparatus comprises a first member 2, a second member 3, and an intermediate member 4 arranged between the first member 2 and the second member 3, and this repair method includes a step of winding a fiber structure having fibers around the outer periphery of the intermediate member 4.

[0082] As described above, in the plasma-resistant structure 1, the plasma protective material 5 and the first member 2, etc., have plasma resistance, which increases the life of the intermediate member 4 and therefore the plasma-resistant structure 1. Furthermore, the voids in the plasma protective material 5 allow it to follow dimensional changes in, for example, the holding member 12 and the base 13 and relieve stress, thereby increasing the life of the electrostatic chuck 11. Furthermore, when the plasma protective material 5 is made by mixing fibers into ceramics or the like, the fibers act as aggregates for the ceramics, which increases the strength of the plasma protective material 5 against stress. This increases the stress resistance to dimensional changes in, for example, the holding member 12 and the base 13, thereby increasing the life of the electrostatic chuck 11.

[0083] In the plasma-resistant structure 1, electrostatic chuck 11, edge ring 41, member for plasma processing apparatus, fiber structure, method for manufacturing plasma-resistant structure 1, and method for repairing member for plasma processing apparatus of the present embodiment, the plasma protective material 5 containing fibers may be disposed on the outer periphery of intermediate member 4. In addition, the extending direction of the fibers may be along the outer periphery of intermediate member 4.

[0084] In addition, in the plasma-resistant structure 1, electrostatic chuck 11, edge ring 41, member for plasma processing apparatus, fiber structure, manufacturing method for plasma-resistant structure 1, and repair method for member for plasma processing apparatus of the present embodiment, the plasma protective material 5 containing fibers may include a fiber structure made of fibers. In other words, the fiber structure may be formed from a plasma-resistant material like the plasma protective material 5.

[0085] In the plasma-resistant structure 1, the electrostatic chuck 11, the edge ring 41, and the member for a plasma processing apparatus according to the present embodiment, the direction in which the fiber structure extends may be along the outer periphery of the intermediate member 4.

[0086] Furthermore, in the plasma-resistant structure 1, electrostatic chuck 11, edge ring 41, and member for plasma processing apparatus, fiber structure, method for manufacturing plasma-resistant structure 1, and method for repairing member for plasma processing apparatus of this embodiment, intermediate member 4 may be a bonding layer.

[0087] Furthermore, in the present embodiment of the plasma-resistant structure 1, electrostatic chuck 11, edge ring and member for plasma processing apparatus, fiber structure, method for manufacturing plasma-resistant structure 1, and method for repairing member for plasma processing apparatus, the length in the extension direction of the fiber may be longer than the outer periphery of intermediate member 4, and the fiber may be wound around the outer periphery of intermediate member 4.

[0088] Furthermore, in the present embodiment of the plasma-resistant structure 1, electrostatic chuck 11, edge ring 41, and member for plasma processing apparatus, fiber structure, method for manufacturing plasma-resistant structure 1, and method for repairing member for plasma processing apparatus, the length in the extension direction of the fiber structure may be longer than the outer periphery of intermediate member 4, and the fiber structure may be wound around the outer periphery of intermediate member 4.

[0089] In addition, in the plasma-resistant structure 1, electrostatic chuck 11, edge ring 41, and member for plasma processing apparatus, fiber structure, method for manufacturing plasma-resistant structure 1, and method for repairing member for plasma processing apparatus of this embodiment, the fibers may be inorganic fibers.

[0090] Furthermore, in the plasma-resistant structure 1, electrostatic chuck 11, edge ring 41, and member for plasma processing apparatus, fiber structure, method for manufacturing plasma-resistant structure 1, and method for repairing member for plasma processing apparatus of this embodiment, the fiber structure may include at least one of twisted yarn, nonwoven fabric, mesh, or woven fabric.

[0091] In the electrostatic chuck 11 of the present embodiment, the first member 2 can be a holding member 12 that holds an object to be held, and the second member 3 can be a base 13 that holds the holding member 12.

[0092] Furthermore, in the electrostatic chuck 11 of this embodiment, the outermost periphery of the holding member 12 may be located outside the outermost point of the plasma protective material 5, and the outermost periphery of the base 13 may be located outside the outermost point of the plasma protective material 5.

[0093] The plasma-resistant structure 1, electrostatic chuck 11, edge ring 41, member for plasma processing apparatus, fiber structure, manufacturing method for plasma-resistant structure 1, and repair method for member for plasma processing apparatus according to this embodiment are not limited to the above-described aspects and combinations.

[0094] For example, the number of internal electrodes provided on the holding member 12 or the base 13 may be two, rather than just one.

[0095] For example, an electrode may be provided on the edge ring portion 42 or inside the edge ring portion 42 .

[0096] For example, the edge ring 41 may further include one or more members in addition to the edge ring portion 42 and the edge ring portion 43, and an intermediate member 4 may be disposed between these members, and a plasma protection material 5 may be provided on the outer periphery of the intermediate member 4.

[0097] The present disclosure will be described in more detail below using examples and comparative examples.

[0098] [Electrostatic chuck manufacturing method]

[0099] Example 1 An electrostatic chuck-shaped plasma-resistant structure (hereinafter referred to as an electrostatic chuck) was fabricated with the configuration shown in Table 1. Specifically, a silicone adhesive (intermediate member, bonding layer) was applied to the top surface of an aluminum base (second member, 296 mm in diameter, 30 mm in thickness) except for a 20 mm periphery width, to a thickness of 0.2 mm after application. An alumina plate (297 mm in diameter, 4 mm in thickness) was bonded to the top surface of the base via this silicone adhesive as a holding member (first member). Next, an alumina fiber bundle (plasma protection material) made of the alumina fibers shown in Table 1 was wound around the outer edge of the silicone adhesive (bonding layer), the alumina plate, and the recess (the outer periphery of the bonding layer) surrounded by the base, and fixed between the alumina plate and the base. The end of the alumina fiber bundle was then bonded to the overlapping portion of the alumina fiber bundle by firing using a burner. Note that the alumina fiber bundle was in contact with the bonding layer and did not protrude beyond the outer edges of the base and the alumina plate. Thereafter, the substrate was left standing in a thermostatic chamber set at 120°C for 2 hours to harden the silicone adhesive, thereby producing an electrostatic chuck.

[0100] (Examples 2 and 3) The electrostatic chucks of Examples 2 and 3 were fabricated in the same manner as the electrostatic chuck of Example 1 so as to have the configuration shown in Table 1. Instead of wrapping around the recess surrounded by the outer peripheral end of the bonding layer, the alumina plate, and the base, alumina fiber bundles (fiber length 15 mm or 200 mm) shown in Table 1 were inserted along the entire outer periphery of the bonding layer so that three alumina fiber bundles were lined up next to each other and the direction in which the alumina fiber bundles extended was along the outer periphery of the bonding layer.

[0101] (Examples 4 to 13) Electrostatic chucks of Examples 4 to 13 were fabricated in the same manner as the electrostatic chuck of Example 1 so as to have the configurations shown in Table 1. In Table 1, "Fiber Bundle 1" represents CY-640D manufactured by Ceramic Wool Industries Co., Ltd., "Fiber Bundle 2" represents CY-1280D manufactured by Ceramic Wool Industries Co., Ltd., "Fiber Bundle 3" represents CT-2560D manufactured by Nitibi Co., Ltd., "Fiber Bundle 4" represents Naslon 12-100 / 2 manufactured by Nippon Seisen Co., Ltd., and "Fiber Bundle 5" represents T300-1000 manufactured by Toray Industries, Inc. (the same applies to Table 2).

[0102] (Comparative Example 1) An electrostatic chuck of Comparative Example 1 was fabricated in the same manner as the electrostatic chuck of Example 1 so as to have the configuration shown in Table 1. The silicone adhesive was applied so as to have a thickness of 3.0 mm after application, and a fluororubber-based O-ring (AS568-277-D manufactured by NOK Corporation, wire diameter 3.5 mm, outer diameter 299 mm, inner diameter 292 mm) was used as the plasma protective material of Comparative Example 1, and was inserted into a recess surrounded by the outer peripheral end of the bonding layer, the alumina plate, and the base.

[0103] (Comparative Example 2) An electrostatic chuck of Comparative Example 2 was fabricated in the same manner as the electrostatic chuck of Example 1 so as to have the configuration shown in Table 1. The plasma protective material of Comparative Example 2 was formed by spraying alumina particles (manufactured by Fujimi Co., Ltd., SURPREX AHP50, particle size 45 μm (manufacturer's nominal value)) from the outside of the bonding layer onto the outer peripheral edge of the bonding layer, the alumina plate, and the recess surrounded by the base.

[0104] Example 14 An edge ring was fabricated to the configuration shown in Table 2. Specifically, a silicone adhesive (intermediate member, bonding layer; Shin-Etsu Chemical Co., Ltd., addition-cure silicone rubber KE-8101) was applied to the surface of a ring-shaped alumina plate (first member; outer diameter 340 mm, inner diameter 300 mm, thickness 16 mm) to a thickness of 0.2 mm after application, covering the entire surface except for a 10-mm width around the outer and inner peripheries of the alumina plate. A ring-shaped aluminum plate (second member) of the same dimensions as the alumina plate was then attached to the silicone adhesive from above. Next, alumina fiber bundles (plasma protective material) made of the alumina fibers shown in Table 2 were inserted along the outer and inner peripheries of the bonding layer into the recesses surrounded by the outer and inner peripheries of the silicone adhesive (bonding layer), the alumina plate, and the aluminum plate. The end points of the alumina fiber bundles were then bonded to the overlapping portions of the alumina fiber bundles by firing using a burner. The alumina fiber bundles were in contact with the bonding layer, and did not extend beyond the outer and inner peripheries of the alumina and aluminum plates. Thereafter, the substrate was left to stand in a thermostatic chamber set at 120°C for 2 hours to harden the silicone adhesive, thereby producing an edge ring.

[0105] (Examples 15 and 16) The edge rings of Examples 15 and 16 were fabricated in the same manner as the edge ring of Example 14 so as to have the configuration shown in Table 2. Instead of inserting alumina fiber bundles made of alumina fibers into the outer and inner peripheral ends of the bonding layer as the plasma protective material, the alumina fiber bundles shown in Table 2 were inserted along the entire outer and inner peripheral ends of the bonding layer so that three alumina fiber bundles were lined up next to each other and the extension direction of the alumina fiber bundles was along the outer and inner peripheral sides of the bonding layer.

[0106] (Examples 17 to 22) The edge rings of Examples 17 to 22 were fabricated in the same manner as the edge ring of Example 14 so as to have the configurations shown in Table 2.

[0107] (Comparative Example 3) The edge ring of Comparative Example 3 was fabricated in the same manner as the edge ring of Example 14, so as to have the configuration shown in Table 2. In Comparative Example 3, the silicone adhesive was applied so that the thickness after application was 3.0 mm, and as the plasma protective material, a fluororubber-based O-ring (AS568-279-D manufactured by NOK Corporation, wire diameter 3.5 mm, outer diameter 337 mm, inner diameter 330 mm) was used on the outer periphery of the silicone adhesive, and a fluororubber-based O-ring (AS568-278-D manufactured by NOK Corporation, wire diameter 3.5 mm, outer diameter 311 mm, inner diameter 304 mm) was used on the inner periphery, and these were inserted into the outer and inner peripheral ends of the silicone adhesive (bonding layer) and into the recess surrounded by the alumina plate and aluminum plate.

[0108] Comparative Example 4 The edge ring of Comparative Example 4 was fabricated in the same manner as the edge ring of Example 14, so as to have the configuration shown in Table 2. The plasma protective material of Comparative Example 4 was formed by plasma spraying alumina particles (SURPREX AHP50 manufactured by Fujimi Co., Ltd., particle size 45 μm (manufacturer's nominal value)) from the outside and inside of the bonding layer toward the inner and outer peripheries of the bonding layer and the recess surrounded by the alumina plate and aluminum plate.

[0109] [Evaluation method] (Measurement of the number of cross-sectional fibers after installation) The number of fibers in the cross section after installation in the electrostatic chucks and edge rings of Examples 1 to 22 was measured under the conditions shown below: That is, the plasma protective materials installed on each electrostatic chuck and edge ring were cut in the vertical direction, and the number of fibers in the cross section was measured from the obtained cross section using a microscope (Keyence Corporation, VHX-5000). (Evaluation of plasma resistance) The electrostatic chucks and edge rings of Examples 1 to 22 and Comparative Examples 1 to 4 were subjected to plasma treatment under the conditions listed below. The plasma protective material was then removed, and the edge of the silicone adhesive was observed at 100x magnification using a digital microscope (Keyence VHX-6000). The evaluation of plasma resistance was based on the following criteria: "A+" if the appearance of the silicone adhesive remained unchanged before and after plasma treatment; "A" if the outer or inner peripheral edge surface of the silicone adhesive receded into the silicone adhesive by a maximum of less than 2 mm; "B" if the outer or inner peripheral edge surface of the silicone adhesive receded into the silicone adhesive by a maximum of 2 mm to less than 5 mm; "C" if the silicone adhesive remained and the outer or inner peripheral edge surface of the silicone adhesive receded into the silicone adhesive by a maximum of 5 mm to less than 8 mm; and "D" if the outer or inner peripheral edge surface of the silicone adhesive receded into the silicone adhesive by 8 mm or more, or if the silicone adhesive was completely lost.

[0110] Plasma processing equipment: Unity Me (Tokyo Electron Ltd.) High frequency power output: 1000W High frequency power supply frequency: 13.56MHz Bias power output: None Vacuum degree: 300mTorr Oxygen gas flow rate: 400sccm Fluorine gas flow rate: 200sccm Temperature of the surface: 25℃ Plasma treatment time: 24 hours

[0111] (Durability evaluation) Durability evaluation was performed on the electrostatic chucks and edge rings of Examples 1 to 22 and Comparative Examples 1 to 4. Specifically, thermal cycles and plasma treatment were performed under the following conditions, and cracking or peeling of the bonding layer and plasma protective material of the electrostatic chuck and edge ring were evaluated. In the thermal cycle test, the electrostatic chuck and edge ring were placed in a thermostatic chamber (TCC-151W manufactured by Espec Corporation) set at 0°C, heated to 120°C at a heating rate of 10°C / min, held at 120°C for 30 minutes, and cooled to 0°C at a heating rate of 10°C / min. This process was repeated 200 times. The electrostatic chuck and edge ring were then removed from the thermostatic chamber and placed in a plasma device, where they were subjected to plasma treatment for 10 hours. The appearance of the electrostatic chuck and edge ring was then observed and evaluated. The durability of the electrostatic chuck and edge ring was evaluated as follows: "A" if neither cracking nor peeling occurred in the bonding layer nor the plasma protective material; "B" if cracking or peeling occurred only in the plasma protective material; "C" if cracking or peeling occurred only in the bonding layer; and "D" if cracking or peeling occurred in both the bonding layer and the plasma protective material. The plasma treatment conditions are shown below.

[0112] Plasma processing equipment: Unity Me (Tokyo Electron Ltd.) High frequency power output: 1000W High frequency power supply frequency: 13.56MHz Bias power output: None Vacuum degree: 300mTorr Oxygen gas flow rate: 400sccm Fluorine gas flow rate: 200sccm Temperature of the surface: 25℃ Plasma treatment time: 10 hours

[0113] (Particle resistance rating 1) The electrostatic chucks of Examples 1 to 13 and Comparative Examples 1 and 2 were evaluated for particle resistance (particle generation ability). Specifically, a dummy wafer was placed on the mounting surface (holding member) of the electrostatic chuck, and the number of particles adhering to the surface of the dummy wafer that had been in contact with the mounting surface after plasma treatment was calculated. That is, a dummy wafer (300 mm in diameter, 775 mm in thickness, made of silicon) was placed on the mounting surface of the electrostatic chuck, and then the chuck was placed in a plasma device and subjected to plasma treatment for 24 hours. Thereafter, the electrostatic chuck was removed, the dummy wafer was lifted from the mounting surface, and the number and size of particles adhering to the surface that had been in contact with the dummy wafer were measured using a wafer surface inspection device (WM-10 manufactured by TOPCON Corporation). The number of particles with a diameter of 0.5 μm or more but less than 1.0 μm and the number of particles with a diameter of 1.0 μm or more were counted. The particle resistance was evaluated as follows: "A" if the total number of particles was less than 1000, "B" if the number of particles was 1000 or more but less than 5000, "C" if the number of particles was 5000 or more but less than 10000, and "D" if the number of particles was 10000 or more. The plasma treatment conditions are shown below.

[0114] Plasma processing equipment: Unity Me (Tokyo Electron Ltd.) High frequency power output: 1000W High frequency power supply frequency: 13.56MHz Bias power output: None Vacuum degree: 300mTorr Oxygen gas flow rate: 400sccm Fluorine gas flow rate: 200sccm Temperature of the surface: 25℃ Plasma treatment time: 24 hours

[0115] (Particle resistance rating 2) The edge rings of Examples 14 to 22 and Comparative Examples 3 and 4 were evaluated for particle resistance. Specifically, the electrostatic chuck of Example 1 was installed on the inner periphery of the edge ring, a dummy wafer was placed on the mounting surface of the electrostatic chuck, and plasma processing was then performed. The number of particles adhering to the surface of the dummy wafer that had been in contact with the mounting surface was then calculated. That is, the electrostatic chuck of Example 1 was installed on the inner periphery of the edge ring, and a dummy wafer (diameter 300 mm, thickness 775 mm, made of silicon) was placed on the mounting surface of the electrostatic chuck to form an evaluation sample. The evaluation sample was then placed in a plasma device and subjected to plasma processing for 24 hours. After plasma processing was completed, the evaluation sample was removed, the dummy wafer was lifted from the mounting surface, and the number and size of particles adhering to the surface that had been in contact with the dummy wafer mounting surface were measured using a wafer surface inspection device (WM-10, manufactured by TOPCON Corporation). The number of particles with a diameter of 0.5 μm or more but less than 1.0 μm and the number of particles with a diameter of 1.0 μm or more were counted. The particle resistance was evaluated as follows: "A" if the total particle count was less than 1500, "B" if the particle count was 1500 or more but less than 5500, "C" if the particle count was 5500 or more but less than 10500, and "D" if the particle count was 10500 or more. The plasma treatment conditions are shown below.

[0116] Plasma processing equipment: Unity Me (Tokyo Electron Ltd.) High frequency power output: 1000W High frequency power supply frequency: 13.56MHz Bias power output: None Vacuum degree: 300mTorr Oxygen gas flow rate: 400sccm Fluorine gas flow rate: 200sccm Temperature of the surface: 25℃ Plasma treatment time: 24 hours

[0117] [Table 1]

[0118] [Table 2]

[0119] (comprehensive evaluation) As shown in Tables 1 and 2, the plasma-resistant structures (electrostatic chucks, edge rings) of the present disclosure, which are equipped with plasma protective materials containing fibers, exhibit a good balance of plasma resistance, durability, and particle resistance, and have an overall longer lifespan, compared to the plasma-resistant structures of Comparative Examples 1 to 4, which do not contain fibers.

[0120] Comparative Examples 1 and 3, which were equipped with an O-ring made of fluororubber, were highly durable but vulnerable to plasma. In the case of twisted yarns like those in the examples, multiple fibers are entangled without being bonded, which is thought to have alleviated stress by changing their positional relationship when stress was applied. In contrast, Comparative Example 3, due to its integrated structure (bulk body), was unable to deform when its positional relationship changed, which is thought to have resulted in cracking. Furthermore, Comparative Examples 2 and 4, in which the plasma protective material was formed by plasma spraying alumina particles instead of fibers, were not only poor in particle resistance, but also vulnerable to thermal stress, particularly in terms of durability, and the plasma protective material cracked after evaluation.

[0121] From the results of Examples 1 to 5 and 14 to 18, it can be seen that the longer the fiber length (aspect ratio), the better the evaluation. It was also found that when the fiber length was short, not only was the plasma resistance poor, but the particle resistance also decreased. Furthermore, good results were obtained for durability regardless of the fiber length.

[0122] The results of Examples 6 to 9 and 20 to 22 showed that if the number of twists is too high, durability and plasma resistance decrease. This is thought to be because the fibers are fixed, making it difficult to relieve stress, and insufficient stress relief increases gaps between the base and holding member and the plasma protective material. On the other hand, it was found that if the number of twists is low, plasma resistance and particle resistance decrease. From the above, it was suggested that the preferred number of twists (converted to 1 meter) is 20 to 300 times. In other words, by setting the number of twists in the above range, stress relief and particle generation suppression can both be achieved.

[0123] The results of Examples 10 and 11 show that plasma resistance decreased as the fiber bundle became thicker (as the number of fibers in the fiber bundle increased). This is thought to be because the increased number of fibers reduces the range of fiber movement, making stress relaxation more difficult, resulting in larger gaps between the base and the fiber bundle and between the holding member and the fiber bundle.

[0124] In Example 12, which used SUS fiber, the plasma resistance was low. This is thought to be due to the low resilience of the material, which led to gaps occurring between the base and the holding member. Durability was good, but this is thought to be due to the high stress relaxation properties of the fiber. In Example 13, which used carbon fiber, the durability and particle resistance were low. This is thought to be due to the high resilience of the fiber, which means that the fiber is easily broken by even a small amount of stress. [Explanation of symbols]

[0125] 1, 1a, 11, 21, 41 Plasma-resistant structure (electrostatic chuck, edge ring) 2, 2a, 12, 22, 42 First member (holding member, edge ring portion) 3, 13, 23, 43 Second component (base, edge ring) 4, 14, 24a, 24b, 44 Intermediate member (bonding layer) 5, 15, 25, 45, 45a, 45b Plasma protection material W Object to be held

Claims

1. A plasma-resistant structure including a first member, a second member, an intermediate member disposed between the first member and the second member, and a plasma protective material including fibers, At least one of the first member and the second member has plasma resistance, A plasma-resistant structure, wherein the plasma protective material containing the fiber is arranged on the outer surface side of the plasma-resistant structure at the end of the intermediate member.

2. The plasma-resistant structure according to claim 1 , wherein the plasma protective material containing the fibers is disposed on an outer periphery of the intermediate member.

3. The plasma-resistant structure according to claim 1 , wherein the fibers extend along an outer periphery of the intermediate member.

4. The plasma-resistant structure according to claim 1 , wherein the plasma protective material including fibers includes a fiber structure made of fibers.

5. The plasma-resistant structure according to claim 4 , wherein the fiber structure extends along an outer periphery of the intermediate member.

6. The plasma-resistant structure according to claim 1 , wherein the intermediate member is a bonding layer.

7. The length of the fiber in the extending direction is longer than the outer periphery of the intermediate member, The plasma-resistant structure according to claim 1 , wherein the fiber is wound around the outer periphery of the intermediate member.

8. a length of the fiber structure in an extending direction is longer than an outer periphery of the intermediate member; The plasma-resistant structure according to claim 4 , wherein the fiber structure is wound around the outer periphery of the intermediate member.

9. The plasma-resistant structure of claim 1 , wherein the fibers are inorganic fibers.

10. The plasma-resistant structure of claim 4 , wherein the textile structure comprises at least one of a twisted yarn, a nonwoven fabric, a mesh, or a woven fabric.

11. A plasma-resistant structure according to claim 1, An electrostatic chuck, wherein the first member is a holding member that holds an object to be held, and the second member is a base that holds the holding member.

12. The electrostatic chuck according to claim 11 , wherein the outermost periphery of the holding member is located outside the outermost point of the plasma protection material.

13. The electrostatic chuck according to claim 11 , wherein the outermost periphery of the base is located outside the outermost point of the plasma protection material.

14. An edge ring comprising the plasma-resistant structure according to claim 1.

15. A member for a plasma processing apparatus, comprising the plasma-resistant structure according to claim 1.

16. A fiber structure having fibers, A plasma-resistant structure including a first member, a second member, an intermediate member disposed between the first member and the second member, and the fiber structure, A fiber structure, characterized in that it is disposed along the outer periphery of the intermediate member.

17. A method for manufacturing a plasma-resistant structure including a first member, a second member, an intermediate member disposed between the first member and the second member, and a fiber structure having fibers, the method comprising: disposing an intermediate member between the first member and the second member; and winding the fiber structure around the outer periphery of the intermediate member.

18. A method for repairing a member for a plasma processing apparatus, the method comprising: a first member; a second member; and an intermediate member disposed between the first member and the second member, the method comprising: A method for repairing a member for a plasma processing apparatus, comprising a step of winding a fiber structure having fibers around the outer periphery of the intermediate member.

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