Laser heat treatment method and method for manufacturing electronic element using the same

Abstract

To provide a laser heat treatment method that enables easy control of heat diffusion and heat transfer characteristics, and facilitates adjustment of cooling behavior and cooling rates when performing heat treatment on a predetermined target using a laser.SOLUTION: A laser heat treatment method includes a step for providing a substrate structure containing a target material layer to be heat treated; a step for forming a capping material layer having a multilayer structure comprising a non-conductive material layer and a conductive material layer on the target material layer; and a step for irradiating the capping material layer with a laser to perform heat treatment on the target material layer.SELECTED DRAWING: Figure 3b

Description

[Technical Field]

[0001] The present invention relates to a heat treatment method for a workpiece and a method for manufacturing an element using the same, and more particularly to a laser heat treatment method and a method for manufacturing an electronic element using the same. [Background technology]

[0002] Semiconductor devices / electronic devices may be manufactured through multiple processes. The processes for manufacturing semiconductor devices / electronic devices may include, for example, a thin film deposition process, a photolithography process, an etching process, an ion implantation process, and a heat treatment (i.e., annealing) process. Among these, the heat treatment process may be a process for improving and securing device characteristics by stabilizing, activating, or melting a substrate or a thin film formed on the substrate, or removing seam defects within the thin film. The heat treatment (annealing) process may include a laser heat treatment process, a rapid thermal process (RTP), and the like.

[0003] Laser heat treatment processes use a laser to primarily heat the surface of a substrate or adjacent regions, thereby reducing the impact on other processes and offering the advantages of relatively easy temperature rise and control. However, as the integration density of semiconductor / electronic devices increases, the size of unit devices continues to shrink, and processes become more advanced, it becomes more difficult to control heat dispersion and heat transfer during laser heat treatment, and it becomes difficult to adjust the cooling behavior and cooling rate, which can lead to problems such as changes / deterioration in characteristics and damage / consumption of materials due to undesired reactions between materials. As a result, device characteristics can deteriorate and the defect rate can increase. Summary of the Invention [Problem to be solved by the invention]

[0004] The technical problem to be solved by the present invention is to provide a laser heat treatment method that can easily control heat diffusion and heat transfer characteristics and can easily adjust cooling behavior and cooling rate when performing heat treatment on a predetermined object using a laser.

[0005] Another technical problem to be solved by the present invention is to provide a laser heat treatment method that can ensure excellent heat treatment characteristics when performing heat treatment on a predetermined object using a laser, and can prevent problems such as property change / deterioration and material damage / consumption due to undesired reactions between materials.

[0006] Another technical problem that the present invention aims to achieve is to provide a method for manufacturing an electronic device (semiconductor device) to which the above-mentioned laser heat treatment method is applied.

[0007] The problems to be solved by the present invention are not limited to those mentioned above, and other problems not mentioned will be apparent to those skilled in the art from the following description. [Means for solving the problem]

[0008] According to one embodiment of the present invention, there is provided a laser heat treatment method, including the steps of: providing a substrate structure including a target material layer to be heat-treated; forming a capping material layer having a multi-layer structure including a non-conductive material layer and a conductive material layer on the target material layer; and irradiating a laser onto the capping material layer to perform heat treatment on the target material layer.

[0009] The non-conductive material layer and the conductive material layer may be sequentially disposed on the target material layer.

[0010] The conductive material layer and the non-conductive material layer may be sequentially disposed on the target material layer.

[0011] When the conductive material layer and the non-conductive material layer are sequentially disposed on the target material layer, the capping material layer may further include a reaction suppression layer disposed between the target material layer and the conductive material layer, and the reaction suppression layer may be configured to suppress material diffusion and reaction between the target material layer and the conductive material layer.

[0012] The reaction suppression layer may include a non-conductive material.

[0013] The reaction suppression layer may have a thickness of about 0.5 nm or more.

[0014] The non-conductive material layer may include an inorganic dielectric material.

[0015] When the non-conductive material layer and the conductive material layer are sequentially disposed on the target material layer, the non-conductive material layer may have a thickness in the range of about 0.5 nm to 1000 nm.

[0016] When the conductive material layer and the non-conductive material layer are sequentially disposed on the target material layer, the non-conductive material layer may have a thickness in the range of about 0.5 nm to 1000 nm.

[0017] The conductive material layer may include a metallic material.

[0018] The conductive material layer may have a thickness in the range of about 0.5 nm to 1000 nm.

[0019] The target substance layer may have a single layer structure or a multi-layer structure including at least two different substance layers.

[0020] The target material layer may include at least one of a semiconductor layer and an insulator layer, and the laser heat treatment may be performed to change the crystallinity, physical properties, or film quality of at least one of the semiconductor layer and the insulator layer.

[0021] The laser heat treatment method may further include removing at least a portion of the capping material layer after performing the heat treatment on the target material layer.

[0022] The laser may be irradiated onto the capping material layer in a scanning manner.

[0023] The laser can be applied using a polygon scanner or a galvanometer scanner.

[0024] The scanning speed of the laser can be about 1 m / s or greater.

[0025] The laser may be irradiated onto the capping material layer in a stepper manner.

[0026] The laser may have a wavelength of about 0.01 μm to 11 μm.

[0027] According to another embodiment of the present invention, there is provided a method for manufacturing an electronic device, comprising: performing heat treatment on a target material layer using the above-described laser heat treatment method; and forming an electronic device including the heat-treated target material layer. [Effects of the Invention]

[0028] According to each embodiment of the present invention, when a predetermined object is heat-treated using a laser, it is possible to easily control heat diffusion and heat transfer characteristics, and to easily adjust cooling behavior and cooling rate, and it is also possible to realize a laser heat treatment method that can ensure excellent heat treatment characteristics when a predetermined object is heat-treated using a laser, and can prevent problems such as property change / deterioration and material damage / consumption due to undesired reactions between materials.

[0029] By applying the laser heat treatment method according to each embodiment of the present invention, it is possible to manufacture electronic devices (semiconductor devices) with excellent performance and uniformity, and it is possible to reduce the defective rate and improve the yield.

[0030] However, the effects of the present invention are not limited to the above effects, and can be variously expanded within the scope of the technical idea and scope of the present invention. [Brief explanation of the drawings]

[0031] [Figure 1a] 1A to 1C are cross-sectional views illustrating a laser heat treatment method according to an embodiment of the present invention. [Figure 1b] 1A to 1C are cross-sectional views illustrating a laser heat treatment method according to an embodiment of the present invention. [Figure 2a] 5A to 5C are cross-sectional views illustrating a laser heat treatment method according to another embodiment of the present invention. [Figure 2b] 5A to 5C are cross-sectional views illustrating a laser heat treatment method according to another embodiment of the present invention. [Figure 3a] 5A to 5C are cross-sectional views illustrating a laser heat treatment method according to another embodiment of the present invention. [Figure 3b] 5A to 5C are cross-sectional views illustrating a laser heat treatment method according to another embodiment of the present invention. [Figure 4] 5A to 5C are cross-sectional views illustrating a laser heat treatment method according to another embodiment of the present invention. [Figure 5] 5A to 5C are cross-sectional views illustrating a laser heat treatment method according to another embodiment of the present invention. [Figure 6] 5A to 5C are cross-sectional views illustrating a laser heat treatment method according to another embodiment of the present invention. [Figure 7] 5A to 5C are cross-sectional views illustrating a laser heat treatment method according to another embodiment of the present invention. [Figure 8] FIG. 10 is a cross-sectional view illustrating a laser heat treatment method according to a comparative example. [Figure 9]2 is a cross-sectional view illustrating heat flow characteristics that may appear in a laser heat treatment method according to an embodiment of the present invention; FIG. [Figure 10] 1A to 1C are cross-sectional views illustrating a laser heat treatment method according to an embodiment of the present invention. [Figure 11] 1 is a diagram for schematically explaining a polygon scanner that can be applied to a laser heat treatment method according to an embodiment of the present invention; [Figure 12] 1 is a diagram for schematically explaining a galvanometer scanner that can be applied to a laser heat treatment method according to an embodiment of the present invention; [Figure 13] 1 is a perspective view illustrating a method for manufacturing an electronic device to which a laser heat treatment method according to an embodiment of the present invention is applied; DETAILED DESCRIPTION OF THE INVENTION

[0032] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0033] The following examples of the present invention are provided to more clearly explain the present invention to those skilled in the art, and the scope of the present invention is not limited by the following examples, which may be modified into many other forms.

[0034] The terms used in this specification are used to describe specific embodiments and are not intended to limit the present invention. As used in this specification, singular terms can include plural forms unless the context clearly dictates otherwise. Furthermore, the terms "comprise" and / or "comprising" as used in this specification specify the presence of a stated shape, step, number, operation, member, element, and / or group thereof, but do not exclude the presence or addition of one or more other shapes, steps, numbers, operations, members, elements, and / or groups thereof. Furthermore, the term "connected" as used in this specification not only means that any respective members are directly connected to each other, but also encompasses the concept of indirect connection between the respective members through the presence of other members between them.

[0035] Additionally, when a component is described herein as being "on" another component, this includes not only when the component is in contact with the other component, but also when there is another component between the two components. The term "and / or" as used herein includes any one of the listed items and all combinations of one or more of the listed items. Furthermore, terms such as "about," "substantially," and other degrees used herein are used to mean a range of values ​​or degrees or their approximations, taking into account inherent manufacturing and material tolerances, and are used to prevent infringers from unfairly exploiting the disclosure, which refers to precise or absolute values ​​provided to facilitate understanding of the present application.

[0036] Hereinafter, each embodiment of the present invention will be described in detail with reference to the accompanying drawings. The size and thickness of regions and parts shown in the accompanying drawings may be exaggerated for clarity and convenience of description. The same reference numerals refer to the same components throughout the detailed description.

[0037] 1a and 1b are cross-sectional views illustrating a laser heat treatment method according to an embodiment of the present invention.

[0038] Referring to FIG. 1a, a substrate structure may be provided that includes a target material layer TL10 to be heat-treated. The target material layer TL10 may include, for example, a semiconductor layer or an insulator layer. The target material layer TL10 may be a material layer used to manufacture a predetermined electronic device (semiconductor device). That is, the target material layer TL10 may be a component of the electronic device (semiconductor device). With respect to the target material layer TL10, the term "layer" may be broadly interpreted. Here, the "layer" may refer to a continuous layer, a patterned layer, or a plug-shaped layer, or may refer to a partial region of a substrate (substrate structure).

[0039] The substrate structure may include a semiconductor substrate or an insulating substrate, or may optionally include a conductive substrate. The substrate structure may further include a device unit including a predetermined thin film or a thin film formed on a substrate (base substrate). The semiconductor substrate may include at least one of various semiconductor materials, such as, but not limited to, Si, Ge, SiGe, SiC, GaN, and GaAs. The thin film may include at least one of a semiconductor thin film, an insulating thin film, and a conductive thin film. The semiconductor thin film may include various semiconductor materials, such as amorphous silicon and polycrystalline silicon. The insulating thin film (insulating layer) may be made of a ceramic material. The insulating thin film may include silicon oxide, silicon nitride, silicon oxynitride, or a high-k material having a higher dielectric constant than silicon nitride. The conductive thin film may include at least one of a metal and a metal compound. The device unit may include, but is not limited to, a switching element such as a transistor or a diode, or a memory element such as a storage node, a capacitor, or a resistance change layer. The substrate structure may include a wafer or have a wafer shape.

[0040] A capping material layer CL10 having a multi-layer structure may be formed on the target material layer TL10. The capping material layer CL10 may have a multi-layer structure including a non-conductive material layer N11 and a conductive material layer C11. In this embodiment, the non-conductive material layer N11 and the conductive material layer C11 may be sequentially disposed on the target material layer TL10. The non-conductive material layer N11 may be a non-conductive layer in terms of electrical conductivity. The conductive material layer C11 may be a conductive layer in terms of electrical conductivity. The non-conductive material layer N11 may be referred to as a "first capping material layer," and the conductive material layer C11 may be referred to as a "second capping material layer." The non-conductive material layer N11 may be disposed between the target material layer TL10 and the conductive material layer C11. The non-conductive material layer N11 may be in direct contact with the target material layer TL10, and the conductive material layer C11 may be in direct contact with the non-conductive material layer N11. The conductive material layer C11 may be separated from the target material layer TL10 by a non-conductive material layer N11. The capping material layer CL10 may be formed to entirely cover the target material layer TL10.

[0041] The conductive material layer C11 may be a heating layer. The conductive material layer C11 may include a metallic material. The conductive material layer C11 may include at least one of a metal and a metal compound. The conductive material layer C11 may be formed of at least one of a metal and a metal compound. As a non-limiting example, the conductive material layer C11 may include at least one of TiN, Ti, TiSi, Ta, TaN, Co, CoSi, Ni, NiSi, Ru, W, WSi, Cu, Re, Mo, Nb, and Cr. It may be preferable for the conductive material layer C11 to have a thickness of about 0.5 nm to 1000 nm to improve its functionality, but this embodiment is not limited thereto, and the appropriate thickness of the conductive material layer C11 may vary depending on the case. The conductive material layer C11 may have a relatively high absorptivity for laser and may serve to transfer or confine heat to the target material layer TL10. In this regard, the conductive material layer C11 may be referred to as a "laser absorption layer (high absorption layer)" or a "heat transfer layer."

[0042] The non-conductive material layer N11 may serve to suppress or prevent reaction and material diffusion between the target material layer TL10 and the conductive material layer C11. In this regard, the non-conductive material layer N11 may be referred to as a reaction suppression layer or a diffusion barrier layer. The non-conductive material layer N11 may be an electrically insulating layer. The non-conductive material layer N11 may include, for example, an inorganic dielectric material (inorganic insulating material) or may be formed of an inorganic dielectric material (inorganic insulating material). Non-limiting examples of the non-conductive material layer N11 may include at least one of silicon oxide (e.g., SiO2), silicon nitride (e.g., Si3N4), silicon nitride oxide, and a high-k material. The high-k material may have a higher dielectric constant than silicon nitride. Non-limiting examples of the high-k material may include hafnium oxide (e.g., HfO2), zirconium oxide (e.g., ZrO2), etc. However, the specific material of the non-conductive material layer N11 is not limited to the above and may vary depending on the case. The thermal conductivity of the non-conductive material layer N11 may be lower than the thermal conductivity of the conductive material layer C11.

[0043] It may be preferable for the non-conductive material layer N11 to have a thickness of about 0.5 nm or more to improve its function. If the thickness of the non-conductive material layer N11 is too thin, i.e., less than about 0.5 nm, the effect of suppressing material diffusion and reaction may be reduced. If the thickness of the non-conductive material layer N11 is too thick, i.e., more than about 1000 nm, the effect of heat transfer from the conductive material layer C11 to the target material layer TL10 may be reduced. Therefore, it may be preferable for the non-conductive material layer N11 to have a thickness in the range of about 0.5 nm to 1000 nm. However, this embodiment is not limited thereto, and the appropriate thickness of the non-conductive material layer N11 may vary depending on the case.

[0044] Referring to FIG. 1b, a laser beam L10 may be irradiated onto the capping material layer CL10 to perform heat treatment (i.e., annealing) on ​​the target material layer TL10. The laser beam L10 may be irradiated onto the capping material layer CL10 from a space (free space) above the capping material layer CL10. The laser beam L10 may be a laser beam. The irradiation of the laser beam L10 may heat the conductive material layer C11 of the capping material layer CL10, and the heat generated in the conductive material layer C11 may be transferred to the target material layer TL10, resulting in the heat treatment of the target material layer TL10. Thus, the target material layer TL10 may be heat-treated using an indirect heating method. The heat generated in the conductive material layer C11 may be transferred to the target material layer TL10 via the non-conductive material layer N11.

[0045] If the target material layer TL10 includes a semiconductor layer or an insulator layer, the heat treatment using a laser (laser beam) may be performed to change the crystallinity, physical properties, or film quality of the semiconductor layer or insulator layer. Non-limiting examples of the heat treatment using a laser include crystallizing an amorphous semiconductor (e.g., amorphous silicon), removing defects such as seams in a thin film, activating a doped region, stabilizing a substrate or a thin film, or changing the physical properties of a substrate or a thin film. The heat treatment using a laser may also be performed for various other purposes.

[0046] The laser L10 used in the embodiment of the present invention may be, for example, any one of ultraviolet light, visible light, infrared light, and microwave. The laser L10 may be, for example, a laser (laser beam) generated by any one of a YAG (yttrium aluminum garnet) laser generator, a CO2 laser generator, a diode laser generator, and a fiber laser generator. The wavelength of the laser L10 may be, for example, about 0.01 μm to 11 μm. However, the specific type and wavelength range of the laser L10 are merely exemplary and may vary depending on the circumstances. Furthermore, in the embodiment of the present invention, the target material layer TL10 may have an initial temperature of, for example, about 550°C or less before heat treatment using the laser L10. The heating temperature of the target material layer TL10 due to irradiation with the laser L10 may be, for example, about 200°C to 3000°C. When a room temperature heater or a low temperature heater is used, the target material layer TL10 may have a low initial temperature and may be heated by laser irradiation. However, the above temperature conditions are merely examples and may vary depending on the case.

[0047] Thereafter, if necessary, a step of removing at least a portion of the capping material layer CL10 may be further performed. The step of removing at least a portion of the capping material layer CL10 may be referred to as a decapping step. At least a portion of the capping material layer CL10 may be removed by various methods, such as chemical etching or physical etching. The conductive material layer C11 may be removed, and then the non-conductive material layer N11 may be removed. If both the conductive material layer C11 and the non-conductive material layer N11 are removed, they may not be used at all as components of an electronic device (semiconductor device). However, depending on the circumstances, at least a portion of the non-conductive material layer N11 may remain after the conductive material layer C11 is removed.

[0048] 2a and 2b are cross-sectional views illustrating a laser heat treatment method according to another embodiment of the present invention.

[0049] 2a, a substrate structure including a target material layer TL10 can be provided. The target material layer TL10 and the substrate structure including it can be the same as or similar to those already described in FIG.

[0050] A capping material layer CL20 having a multi-layer structure may be formed on the target material layer TL10. The capping material layer CL20 may have a multi-layer structure including a conductive material layer C12 and a non-conductive material layer N12. In this embodiment, the conductive material layer C12 and the non-conductive material layer N12 may be sequentially disposed on the target material layer TL10. The conductive material layer C12 may be a conductive layer in an electrically conductive manner. The non-conductive material layer N12 may be a non-conductive layer in an electrically conductive manner. The conductive material layer C12 may be referred to as a "first capping material layer," and the non-conductive material layer N12 may be referred to as a "second capping material layer." The conductive material layer C12 may be disposed between the target material layer TL10 and the non-conductive material layer N12. The conductive material layer C12 may be in direct contact with the target material layer TL10, and the non-conductive material layer N12 may be in direct contact with the conductive material layer C12. The non-conductive material layer N12 may be separated from the target material layer TL10 by a conductive material layer C12.

[0051] The conductive material layer C12 may be a heating layer. The conductive material layer C12 may include a metallic material. The conductive material layer C12 may include at least one of a metal and a metal compound. The conductive material layer C12 may be formed of at least one of a metal and a metal compound. As a non-limiting example, the conductive material layer C12 may include at least one of TiN, Ti, TiSi, Ta, TaN, Co, CoSi, Ni, NiSi, Ru, W, WSi, Cu, Re, Mo, Nb, and Cr. It may be preferable for the conductive material layer C12 to have a thickness of about 0.5 nm to 1000 nm to improve its functionality, but this embodiment is not limited thereto, and the appropriate thickness of the conductive material layer C12 may vary depending on the case. The conductive material layer C12 may have a relatively high absorptivity for laser and may serve to transfer or confine heat to the target material layer TL10.

[0052] The non-conductive material layer N12 may have a lower thermal conductivity than the conductive material layer C12. It may be preferable for the thermal conductivity of the non-conductive material layer N12 to be relatively low. The non-conductive material layer N12 may be disposed on the top of the capping material layer CL20. A conductive material layer C12 with high heat absorption may be disposed on the underside of the non-conductive material layer N12. The non-conductive material layer N12 may effectively prevent heat generated in the conductive material layer C12 by the laser from being released into the free space above the non-conductive material layer N12. Therefore, during laser heat treatment, the non-conductive material layer N12 may reduce the rate at which heat is cooled to the top of the capping material layer CL20 through radiation (thermal radiation), convection (thermal convection), and conduction (thermal conduction). In this regard, during laser heat treatment, heat transfer from the conductive material layer C12 to the lateral direction may be more effective, thereby eliminating the problem of uneven heat distribution in the conductive material layer C12. In addition, the non-conductive material layer N12 may play a role in minimizing changes in the conductive material layer C12.

[0053] The non-conductive material layer N12 may be an electrically insulating layer. The non-conductive material layer N12 may include, for example, an inorganic dielectric material (inorganic insulating material) or may be formed of an inorganic dielectric material (inorganic insulating material). Non-limiting examples of the non-conductive material layer N12 include at least one of silicon oxide (e.g., SiO2), silicon nitride (e.g., Si3N4), silicon nitride oxide, and a high-k material. The high-k material may have a higher dielectric constant than silicon nitride. Non-limiting examples of the high-k material include hafnium oxide (e.g., HfO2), zirconium oxide (e.g., ZrO2), etc. However, the specific material of the non-conductive material layer N12 is not limited to the above and may vary depending on the case.

[0054] It may be preferable for the non-conductive material layer N12 to have a thickness of about 0.5 nm to 1000 nm to improve its functionality and process efficiency. If the thickness of the non-conductive material layer N12 is too thin, i.e., less than about 0.5 nm, the effects of suppressing heat emission and controlling the cooling rate may be reduced. If the thickness of the non-conductive material layer N12 is too thick, i.e., more than about 1000 nm, the process efficiency may be reduced or the laser transmission efficiency to the conductive material layer C12 may be slightly reduced. Therefore, it may be preferable for the non-conductive material layer N12 to have a thickness of about 0.5 nm to 1000 nm. However, this embodiment is not limited thereto, and the appropriate thickness of the non-conductive material layer N12 may vary depending on the case.

[0055] 2b, the target material layer TL10 may be heat-treated (i.e., annealed) by irradiating the capping material layer CL20 with a laser beam L10. The laser beam L10 may be irradiated toward the capping material layer CL20 from the space (free space) above the capping material layer CL20. The irradiation of the laser beam L10 may heat the conductive material layer C12 of the capping material layer CL20, and the heat generated in the conductive material layer C12 may be transferred to the target material layer TL10, resulting in the heat treatment of the target material layer TL10. The target material layer TL10 may be heat-treated using an indirect heating method.

[0056] The non-conductive material layer N12 can effectively prevent heat generated in the conductive material layer C12 by the laser L10 from being released into the free space above the non-conductive material layer N12. Therefore, during laser heat treatment, the rate at which heat is cooled through radiation (thermal radiation), convection (thermal convection), and conduction (thermal conduction) toward the top of the capping material layer CL20 can be reduced by the non-conductive material layer N12. In this regard, during laser heat treatment, heat can be more effectively transferred laterally from the conductive material layer C12, thereby eliminating the problem of uneven heat distribution in the conductive material layer C12.

[0057] The target material layer TL10 may be patterned in a predetermined pattern, or may have different densities (layer densities) or thicknesses depending on the region. In this case, the heat absorption and heat reflection characteristics of the target material layer TL10 may differ depending on the region. This may result in uneven heat distribution between the target material layer TL10 and the conductive material layer C12. However, when the non-conductive material layer N12 is disposed on the conductive material layer C12, the non-conductive material layer N12 serves to prevent heat from being released to the upper portion of the capping material layer CL20, thereby reducing the cooling rate and improving heat uniformity, thereby effectively preventing uneven heat distribution between the conductive material layer C12 and the target material layer TL10.

[0058] Thereafter, if necessary, a step of removing at least a portion of the capping material layer CL20 may be further performed. At least a portion of the capping material layer CL20 may be removed by various methods, such as chemical etching or physical etching. The non-conductive material layer N12 may be removed, and then the conductive material layer C12 may be removed. Both the non-conductive material layer N12 and the conductive material layer C12 may be removed. However, depending on the circumstances, at least a portion of the capping material layer CL20 may be left unremoved.

[0059] 3a and 3b are cross-sectional views illustrating a laser heat treatment method according to another embodiment of the present invention, which is a modified version of the embodiment of FIGS.

[0060] 3a, a substrate structure including a target material layer TL10 can be provided. The target material layer TL10 and the substrate structure including it can be the same as or similar to those already described in FIG.

[0061] A capping material layer CL30 having a multilayer structure may be formed on the target material layer TL10. The capping material layer CL30 may include a conductive material layer C12 and a non-conductive material layer N12. The capping material layer CL30 may further include a reaction inhibition layer B12. In this embodiment, the reaction inhibition layer B12, the conductive material layer C12, and the non-conductive material layer N12 may be sequentially disposed on the target material layer TL10. The reaction inhibition layer B12 may be referred to as the "first capping material layer," the conductive material layer C12 may be referred to as the "second capping material layer," and the non-conductive material layer N12 may be referred to as the "third capping material layer." Alternatively, the conductive material layer C12 may be referred to as the "first capping material layer," the non-conductive material layer N12 may be referred to as the "second capping material layer," and the reaction inhibition layer B12 may be referred to as the "third capping material layer." In some cases, the conductive material layer C12 and the non-conductive material layer N12 may be considered to constitute a single capping material layer, and the reaction suppression layer B12 may be considered to be a material layer separate from the capping material layer.

[0062] The reaction suppression layer B12 may be disposed between the target substance layer TL10 and the conductive material layer C12. The conductive material layer C12 may be disposed between the reaction suppression layer B12 and the non-conductive material layer N12. The reaction suppression layer B12 may be in direct contact with the target substance layer TL10, the conductive material layer C12 may be in direct contact with the reaction suppression layer B12, and the non-conductive material layer N12 may be in direct contact with the conductive material layer C12. The conductive material layer C12 may be separated from the target substance layer TL10 by the reaction suppression layer B12, and the non-conductive material layer N12 may be separated from the reaction suppression layer B12 by the conductive material layer C12.

[0063] The reaction suppression layer B12 may be configured to suppress material diffusion and reaction between the target material layer TL10 and the conductive material layer C12. The reaction suppression layer B12 may be a type of diffusion barrier layer. The reaction suppression layer B12 may include a non-conductive material. The reaction suppression layer B12 may be an electrically insulating layer. The reaction suppression layer B12 may include, for example, an inorganic dielectric material (inorganic insulating material) or may be formed of an inorganic dielectric material (inorganic insulating material). Non-limiting examples of the reaction suppression layer B12 include at least one of silicon oxide (e.g., SiO2), silicon nitride (e.g., Si3N4), silicon nitride oxide, and a high-k material. The high-k material may have a higher dielectric constant than silicon nitride. Non-limiting examples of the high-k material include hafnium oxide (e.g., HfO2), zirconium oxide (e.g., ZrO2), etc. However, the specific material of the reaction suppression layer B12 is not limited to the above and may vary depending on the circumstances. The thermal conductivity of the reaction suppression layer B12 may be lower than the thermal conductivity of the conductive material layer C12.

[0064] It may be preferable for the reaction suppression layer B12 to have a thickness of about 0.5 nm to 1000 nm to improve its function. If the thickness of the reaction suppression layer B12 is too thin, i.e., less than about 0.5 nm, the effect of suppressing substance diffusion and reaction may be reduced. If the thickness of the reaction suppression layer B12 is too thick, i.e., more than about 1000 nm, the effect of heat transfer from the conductive material layer C12 to the target material layer TL10 may be reduced. Therefore, it may be preferable for the reaction suppression layer B12 to have a thickness of about 0.5 nm to 1000 nm. However, this embodiment is not limited thereto, and the appropriate thickness of the reaction suppression layer B12 may vary depending on the case.

[0065] Referring to FIG. 3b, a laser beam L10 may be irradiated onto the capping material layer CL30 to perform heat treatment (i.e., annealing) on ​​the target material layer TL10. The laser beam L10 may be irradiated onto the capping material layer CL30 from the space (free space) above the capping material layer CL30. The irradiation of the laser beam L10 may heat the conductive material layer C12 of the capping material layer CL30, and the heat generated in the conductive material layer C12 may be transferred to the target material layer TL10, resulting in the heat treatment of the target material layer TL10. The target material layer TL10 may be heat-treated using an indirect heating method. The non-conductive material layer N12 may effectively prevent heat generated in the conductive material layer C12 by the laser beam L10 from being released into the free space above the non-conductive material layer N12.

[0066] Thereafter, if necessary, a step of removing at least a portion of the capping material layer CL30 may be performed. At least a portion of the capping material layer CL30 may be removed by various methods, such as chemical etching or physical etching. The non-conductive material layer N12, the conductive material layer C12, and the reaction inhibition layer B12 may be removed sequentially. The non-conductive material layer N12, the conductive material layer C12, and the reaction inhibition layer B12 may all be removed. However, depending on the circumstances, at least a portion of the capping material layer CL30 may be left without being removed. As a non-limiting example, after removing the non-conductive material layer N12 and the conductive material layer C12, at least a portion of the reaction inhibition layer B12 may be left.

[0067] Although the target substance layer TL10 is shown as a single-layer structure in the embodiments of Figures 1a and 1b, 2a and 2b, and 3a and 3b, the target substance layer TL10 may have a multi-layer structure including at least two different material layers. The target substance layer TL10 may have a multi-layer structure of two or more layers. Examples of target substance layers having a multi-layer structure are shown in Figures 4 to 7.

[0068] 4 to 6 are cross-sectional views illustrating a laser heat treatment method according to another embodiment of the present invention. Fig. 4 is a modified embodiment of Fig. 1b, Fig. 5 is a modified embodiment of Fig. 2b, and Fig. 6 is a modified embodiment of Fig. 3b.

[0069] 4 to 6, the target material layer TL20 may have a multi-layer structure including at least two different material layers. The target material layer TL20 may include a first material layer T10 and a second material layer T20. The first material layer T10 may be disposed between the capping material layers CL10, CL20, and CL30 and the second material layer T20. The first material layer T10 may be in contact with the capping material layers CL10, CL20, and CL30, and the second material layer T20 may be spaced apart from the capping material layers CL10, CL20, and CL30. The first material layer T10 may be referred to as the "first target material layer," and the second material layer T20 may be referred to as the "second target material layer."

[0070] The target material layer TL20 may include at least one of a semiconductor layer and an insulator layer, and the laser heat treatment may be performed to change the crystallinity, physical properties, or film quality of at least one of the semiconductor layer and the insulator layer. One of the first and second material layers T10 and T20 may be a semiconductor layer or an insulator layer. The target material layer TL20 may also include a conductive layer. The heat treatment may be performed on the first and second material layers T10 and T20 constituting the target material layer TL20. The layer whose physical properties are to be effectively changed through the heat treatment may be one or more of the first and second material layers T10 and T20.

[0071] Additionally, in the embodiments of FIGS. 1a and 1b and the embodiment of FIG. 4, the non-conductive material layer N12 described in FIGS. 2a and 2b may be further formed on the conductive material layer C11. That is, in the embodiments of FIGS. 1a and 1b and the embodiment of FIG. 4, the capping material layer CL10 may further include a non-conductive material layer N12 disposed on the conductive material layer C11. In this case, the non-conductive material layer N12 may effectively prevent heat generated in the conductive material layer C11 by the laser from being released into free space above the non-conductive material layer N12. Therefore, during laser heat treatment, the non-conductive material layer N12 may reduce the rate at which heat is cooled to the top of the capping material layer through radiation (thermal radiation), convection (thermal convection), and conduction (thermal conduction). In addition, the non-conductive material layer N12 may serve to minimize changes in the conductive material layer C11.

[0072] 7 is a cross-sectional view illustrating a laser heat treatment method according to another embodiment of the present invention, which is a modified embodiment of FIG.

[0073] Referring to FIG. 7, the target material layer TL30 may have a multi-layer structure including at least three different material layers. The target material layer TL30 may include a first material layer T11, a second material layer T21, and a third material layer T31. The first material layer T11, the second material layer T21, and the third material layer T31 may be sequentially disposed below the capping material layer CL30. The first material layer T11 may be disposed between the capping material layer CL30 and the second material layer T21, and the second material layer T21 may be disposed between the first material layer T11 and the third material layer T31. The first material layer T11 may be referred to as the "first target material layer," the second material layer T21 may be referred to as the "second target material layer," and the third material layer T31 may be referred to as the "third target material layer."

[0074] The target material layer TL30 may include at least one of a semiconductor layer and an insulator layer, and the laser heat treatment may be performed to change the crystallinity, physical properties, or film quality of at least one of the semiconductor layer and the insulator layer. At least one of the first, second, and third material layers T11, T21, and T31 may be a semiconductor layer or an insulator layer. The target material layer TL30 may also include a conductive layer. The heat treatment may be performed on the first, second, and third material layers T11, T21, and T31 constituting the target material layer TL30. The layer whose physical properties are to be effectively changed through the heat treatment may be one or more of the first, second, and third material layers T11, T21, and T31.

[0075] The target substance layer TL30 shown in Fig. 7 may also be applied to the embodiment of Fig. 1b and the embodiment of Fig. 2b. The target substance layer may also have a multi-layer structure of four or more layers.

[0076] 1a to 7, the capping material layers CL10, CL20, and CL30 may include two or more conductive material layers C11 or C12. Also, in each of the above embodiments, the capping material layers CL10, CL20, and CL30 may include two or more non-conductive material layers N11 or N12.

[0077] FIG. 8 is a cross-sectional view for explaining a laser heat treatment method according to a comparative example.

[0078] Referring to FIG. 8, in the comparative example, a laser beam L10 is irradiated onto the target material layer TL20 to perform heat treatment on the target material layer TL20. In this case, the absence of a heating layer that effectively absorbs the laser beam L10 may hinder the target material layer TL20 from being heated. Furthermore, when the target material layer TL20 is cooled after being heated, cooling (cooling through radiation, convection, and conduction) to the free space above the target material layer TL20 occurs at a relatively fast rate, which can result in uneven heat distribution within the target material layer TL20. In FIG. 8, the arrows (red arrows) on the target material layer TL20 schematically represent the heat flow during cooling after heat treatment. Heat may not be sufficiently transferred laterally from within the target material layer TL20, resulting in uneven heat distribution and other problems.

[0079] Although not shown in the drawing, even if a conductive material layer that acts as a heating layer is formed on the target material layer TL20 of Figure 8 and then laser heat treatment is performed, the above-mentioned uneven heat distribution and the resulting problems may occur.

[0080] FIG. 9 is a cross-sectional view illustrating heat flow characteristics that may appear in a laser heat treatment method according to an embodiment of the present invention.

[0081] 9, a capping material layer CL20 having a multilayer structure including a conductive material layer C12 and a non-conductive material layer N12 may be formed on a target material layer TL20. Then, a laser beam L10 may be irradiated onto the capping material layer CL20 to perform a heat treatment on the target material layer TL20. In this case, the non-conductive material layer N12 may effectively prevent heat generated in the conductive material layer C12 by the laser beam L10 from being released into the free space above the non-conductive material layer N12. Therefore, during the laser heat treatment, the non-conductive material layer N12 may reduce the rate at which heat is cooled upward through radiation (thermal radiation), convection (thermal convection), and conduction (thermal conduction) toward the top of the capping material layer CL20. This may result in more efficient lateral heat transfer from the conductive material layer C12 during the laser heat treatment, thereby eliminating the problem of uneven heat distribution between the conductive material layer C12 and the target material layer TL20. The arrows (red arrows) shown in the target material layer TL20 in FIG. 9 schematically show the heat flow when cooling after the heat treatment has progressed.

[0082] At least a portion of the target material layer TL20 may be patterned in a predetermined shape. Alternatively, the target material layer TL20 may have different densities (layer densities) or thicknesses depending on the region. In this case, the heat absorption and heat reflection characteristics of the target material layer TL20 may differ depending on the region. This may result in uneven heat distribution between the target material layer TL20 and the conductive material layer C12. However, when the non-conductive material layer N12 is disposed on the conductive material layer C12, the non-conductive material layer N12 serves to prevent heat from being released to the upper portion of the capping material layer CL20, thereby reducing the cooling rate and improving heat uniformity, thereby effectively preventing uneven heat distribution between the conductive material layer C12 and the target material layer TL10.

[0083] When performing laser heat treatment on non-conductive or semiconductor materials, the efficiency may be reduced even if energy above the bandgap is required or if energy higher than the bandgap is irradiated. To overcome this problem, in embodiments of the present invention, a heating layer (conductive material layer) with high laser absorption may be formed on top of a target material layer with low laser absorption (such as a ceramic material layer) during laser heat treatment, followed by heat treatment. This allows the target material to be easily heated with low energy and minimizes undesirable structural changes and property degradation that can occur in the substrate structure when physical mutations occur in the deposited material at high temperatures and the target material mutates at lower temperatures. The conductive material applied to the heating layer during laser heat treatment effectively absorbs the laser, allowing for temperature rise with low laser energy and heats the surrounding target material through conduction. Therefore, the laser energy required for heating can be reduced, and if the upper material undergoes a smaller physical change (such as, but not limited to, melting or thermal expansion) at a higher temperature than the lower material, structural changes due to physical changes in the lower material can be minimized. Additionally, when a non-conductive material layer is deposited on a conductive material layer acting as a heating layer, the non-conductive material layer can also serve to prevent oxidation of the conductive material layer (heating layer).

[0084] FIG. 10 is a cross-sectional view for explaining a laser heat treatment method according to an embodiment of the present invention.

[0085] 10, after forming a capping material layer CL30 on a substrate structure including a target material layer TL20, a laser L10 may be irradiated onto the capping material layer CL30 to perform a heat treatment on the target material layer TL20. The target material layer TL20 and the capping material layer CL30 may have the configurations according to various embodiments described with reference to FIGS. 1a to 7. Here, for example, the target material layer TL20 and the capping material layer CL30 have the configurations shown in FIG. 6.

[0086] The laser L10 may be irradiated onto the capping material layer CL30 in a scanning manner. The position of the laser L10 irradiated onto the substrate structure may be moved, the position of the substrate structure may be moved relative to the laser L10, or both the positions of the substrate structure and the laser L10 may be moved. When the laser L10 is irradiated in this manner, the heating process using the laser L10 may be performed more easily and quickly. This may result in reduced process costs and time. However, a stepper method other than the scanning method may also be used when irradiating the laser. That is, the laser may be irradiated onto the capping material layer in a stepper method.

[0087] In the embodiment of the present invention, when the laser L10 is irradiated in a scanning manner, the laser L10 may be irradiated using a polygon scanner or a galvanometer scanner, as a non-limiting example.

[0088] FIG. 11 is a diagram for schematically explaining a polygon scanner that can be applied to the laser heat treatment method according to the embodiment of the present invention.

[0089] Referring to FIG. 11 , the polygon scanner may include a laser generator 10, a polygon mirror 20, and an optical system 30. A laser (laser beam) L1 generated by the laser generator 10 may be irradiated onto a substrate structure 70 via the polygon mirror 20 and the optical system 30. Here, the substrate structure 70 may include a target material layer and a capping material layer. The substrate structure 70 may be placed on a predetermined stage 100. As the polygon mirror 20 rotates, scanning with the laser L1 may be performed. The position of the stage 100 may be moved as needed. However, the configuration of the polygon scanner described with reference to FIG. 11 is merely exemplary and may be modified in various ways.

[0090] FIG. 12 is a diagram for schematically explaining a galvanometer scanner that can be applied to the laser heat treatment method according to an embodiment of the present invention.

[0091] Referring to FIG. 11 , the galvanometer scanner may include a laser generator 15, a first driver 25, a first mirror 35, a second driver 45, a second mirror 55, and an optical system 65. The first mirror 35 may be connected to the first driver 25 and rotated by the first driver 25. The first mirror 35 may rotate about a first axis. The second mirror 55 may be connected to the second driver 45 and rotated by the second driver 45. The second mirror 55 may rotate about a second axis. The second axis may be perpendicular to the first axis. The first driver 25 may include a first motor, and the second driver 45 may include a second motor. The first driver 25 may be a first galvanometer, and the second driver 45 may be a second galvanometer. A laser (laser beam) L1 generated by the laser generator 15 may be irradiated onto a substrate structure (not shown) via a first mirror 35, a second mirror 55, and an optical system 65. Here, the substrate structure may include a target material layer and a capping material layer. The substrate structure may be placed on a stage 105. As the first mirror 35 and the second mirror 55 rotate, scanning of the laser L1 may be performed. The position of the stage 105 may be moved as needed. However, the configuration of the galvanometer scanner described with reference to FIG. 12 is merely exemplary and may be modified in various ways.

[0092] In one embodiment of the present invention, the laser scanning speed may be about 1 m / s or more. According to one example, the laser scanning speed may be about 1 m / s to several tens of km / s. However, the upper limit of the laser scanning speed is not limited to several tens of km / s.

[0093] A method for manufacturing an electronic device (semiconductor device) according to an embodiment of the present invention may include heat-treating a target material layer using a laser heat-treatment method according to any of the previously described embodiments, and forming an electronic device (semiconductor device) including the heat-treated target material layer. The target material layer may be disposed within a substrate structure. Therefore, the method for manufacturing an electronic device (semiconductor device) may include heat-treating a substrate structure using a laser heat-treatment method according to any of the embodiments, and forming an electronic device (semiconductor device) from the heat-treated substrate structure. Forming the electronic device (semiconductor device) from the heat-treated substrate structure may include, for example, performing a finishing process on the substrate structure, dicing the substrate structure to form multiple device portions, and packaging the multiple device portions. The finishing process, dicing process, packaging process, etc. are well known, so detailed descriptions thereof will be omitted.

[0094] FIG. 13 is a perspective view for explaining a method for manufacturing an electronic device to which the laser heat treatment method according to the embodiment of the present invention is applied.

[0095] 13, a plurality of devices D10 can be formed from the heat-treated substrate structure S100. The heat-treated substrate structure S100 can include a heat-treated target material layer. The plurality of devices D10 can be electronic devices (semiconductor devices). The devices D10 can be memory devices or non-memory devices.

[0096] According to the above-described embodiments of the present invention, it is possible to realize a laser heat treatment method that can easily control heat diffusion and heat transfer characteristics and easily adjust cooling behavior and cooling rate when heat treating a predetermined object using a laser. Furthermore, according to the embodiments of the present invention, it is possible to realize a laser heat treatment method that can ensure excellent heat treatment characteristics when heat treating a predetermined object using a laser and prevent problems such as property changes / deterioration and material damage / consumption due to undesired reactions between materials. By applying the laser heat treatment method according to the embodiments of the present invention, it is possible to manufacture electronic devices (semiconductor devices) with excellent performance and uniformity, reduce the defect rate, and improve yield.

[0097] Although specific terms are used in this specification to describe preferred embodiments of the present invention, they are used in a general sense merely to facilitate understanding of the present invention and are not intended to limit the scope of the present invention. It will be obvious to those skilled in the art that other modifications based on the technical concept of the present invention are possible in addition to the embodiments disclosed herein. Those skilled in the art will appreciate that the laser heat treatment methods and electronic device manufacturing methods using the same according to the embodiments described with reference to FIGS. 1A through 7 and 9 through 13 can be variously substituted, modified, and altered without departing from the technical concept of the present invention. Therefore, the scope of the present invention should be determined not by the described embodiments but by the technical concept set forth in the claims. [Explanation of symbols]

[0098] B12 Reaction suppression layer C11, C12 conductive material layers CL10, CL20, CL30 capping material layer D10 element L1, L10 laser N11, N12 Non-conductive material layers S100 Heat-treated substrate structure TL10, TL20, TL30 target material layers T10, T11 1st material layer T20, T21 2nd material layer T31 3rd material layer

Claims

1. providing a substrate structure including a layer of material to be heat treated; forming a capping material layer having a multi-layer structure including a non-conductive material layer and a conductive material layer on the target material layer; and irradiating the capping material layer with a laser to perform a heat treatment on the target material layer.

2. The laser heat treatment method according to claim 1 , wherein the non-conductive material layer and the conductive material layer are sequentially disposed on the target material layer.

3. The laser heat treatment method of claim 1 , wherein the conductive material layer and the non-conductive material layer are sequentially disposed on the target material layer.

4. the capping material layer further includes a reaction suppression layer disposed between the target material layer and the conductive material layer; The laser heat treatment method according to claim 3 , wherein the reaction suppression layer is configured to suppress material diffusion and reaction between the target material layer and the conductive material layer.

5. The laser heat treatment method according to claim 4 , wherein the reaction suppression layer includes a non-conductive material.

6. 5. The laser heat treatment method according to claim 4, wherein the reaction suppression layer has a thickness in the range of 0.5 nm to 1000 nm.

7. The laser heat treatment method of claim 1 , wherein the non-conductive material layer comprises an inorganic dielectric material.

8. 3. The laser heat treatment method according to claim 2, wherein the non-conductive material layer has a thickness in the range of 0.5 nm to 1000 nm.

9. 4. The laser heat treatment method according to claim 3, wherein the non-conductive material layer has a thickness in the range of 0.5 nm to 1000 nm.

10. The laser heat treatment method of claim 1 , wherein the conductive material layer includes a metallic material.

11. 2. The laser heat treatment method according to claim 1, wherein the conductive material layer has a thickness in the range of 0.5 nm to 1000 nm.

12. The laser heat treatment method according to claim 1 , wherein the target material layer has a single layer structure or a multi-layer structure including at least two different material layers.

13. 2. The laser heat treatment method according to claim 1, wherein the target material layer includes at least one of a semiconductor layer and an insulator layer, and the laser heat treatment is performed to change the crystallinity, physical properties, or film quality of at least one of the semiconductor layer and the insulator layer.

14. The laser heat treatment method of claim 1 , further comprising the step of removing at least a portion of the capping material layer after the step of performing the heat treatment on the target material layer.

15. The laser heat treatment method of claim 1 , wherein the laser is irradiated onto the capping material layer in a scanning manner.

16. The laser heat treatment method according to claim 15, wherein the laser is irradiated using a polygon scanner or a galvanometer scanner.

17. 16. The laser heat treatment method according to claim 15, wherein the scanning speed of the laser is 1 m / s or more.

18. The laser heat treatment method of claim 1 , wherein the laser is irradiated onto the capping material layer in a stepper manner.

19. 2. The laser heat treatment method according to claim 1, wherein the laser has a wavelength of 0.01 μm to 11 μm.

20. A step of performing a heat treatment on a target material layer using the laser heat treatment method according to any one of claims 1 to 19; and forming an electronic device including the heat-treated target material layer.

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