Development device and cleaning method of the same

Abstract

To inhibit drainage from being hindered by a solid of a mixture of a developing solution and a rinse liquid in a development device which rinses a substrate with the rinse liquid which is adjusted so that surface tension becomes smaller than that of water after development with the developing solution.SOLUTION: A development device develops a substrate with a developing solution and includes: a holding part which holds the substrate; a cup which is provided in a manner that the cup can enclose the substrate held by the holding part; a developing solution discharge part which discharges the developing solution to the substrate held by the holding part; a rinse liquid discharge part which discharges a rinse liquid adjusted so that surface tension becomes smaller than that of water to the substrate held by the holding part; and a solidification inhibition fluid supply part which supplies a solidification inhibition fluid for inhibiting solidification of a mixture of the developing solution and the rinse liquid to the interior of the development device.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a developing device and a method for cleaning the same. [Background technology]

[0002] Patent Document 1 describes a liquid processing apparatus that rotates a substrate using a spin chuck around which a cup body is disposed, in which a cleaning member is supported around a vertical axis, can be raised and lowered relative to a cleaning nozzle, and can rotate at a height suitable for cleaning the cup body. When cleaning the back surface of the substrate, the cleaning member is set to a first position, and cleaning liquid from the cleaning nozzle passes through an opening in the cleaning member and reaches the back surface of the substrate. When cleaning the cup body, the cleaning member is set to a second position higher than the first position, and cleaning liquid from the cleaning nozzle is caused to collide with the annular portion of the cleaning member and is guided to the inner surface of the cup body. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-183121 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology disclosed herein prevents solidified mixtures of developer and rinse liquid from obstructing drainage in a developing device that rinses with a rinse liquid adjusted to have a surface normal force smaller than that of water after development with developer. [Means for solving the problem]

[0005] One aspect of the present disclosure is a developing apparatus that develops a substrate with a developer, the developing apparatus comprising: a holding portion that holds the substrate; a cup that is configured to surround the substrate held in the holding portion; a developer discharge portion that discharges the developer onto the substrate held in the holding portion; a rinse liquid discharge portion that discharges a rinse liquid that is adjusted to have a surface normal force lower than that of water onto the substrate held in the holding portion; and a solidification-inhibiting fluid supply portion that supplies a solidification-inhibiting fluid into the developing apparatus that inhibits solidification of a mixture of the developer and the rinse liquid. [Effects of the Invention]

[0006] According to the present disclosure, in a developing device that rinses with a rinse liquid adjusted to have a surface normal force smaller than that of water after development with a developer, it is possible to prevent solidified materials from forming in the mixture of the developer and rinse liquid from obstructing drainage. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a vertical cross-sectional view schematically illustrating a configuration of a developing device according to a first embodiment. [Figure 2] 1 is a cross-sectional view schematically illustrating a configuration of a developing device according to a first embodiment. [Figure 3] FIG. [Figure 4] 3 is a flowchart showing main steps of a processing sequence executed by the developing device of FIGS. 1 and 2. [Figure 5] 10A and 10B are diagrams illustrating other examples of the positions of the ejection ports of the cup cleaning liquid in the cup. [Figure 6] FIG. 10 is a diagram schematically illustrating the configuration of a developing device according to a second embodiment. [Figure 7] 7 is a flowchart showing main steps of a processing sequence executed by the developing device of FIG. 6. [Figure 8] FIG. 10 is a diagram showing another example of the acid supply position. DETAILED DESCRIPTION OF THE INVENTION

[0008] In photolithography, a manufacturing process for semiconductor devices, etc., a series of processes is performed to form a desired resist pattern on a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer"). The series of processes includes, for example, a resist coating process in which a resist solution is supplied onto the substrate to form a resist coating (hereinafter referred to as a "resist film"), an exposure process in which the resist film is exposed to light in a predetermined pattern, a PEB (Post Exposure Bake) process in which the substrate is heated after exposure in order to promote chemical reactions within the exposed resist film, and a development process in which the substrate after the exposure process is developed to form a resist pattern.

[0009] The development process described above is performed using a developing apparatus. The developing apparatus includes a holder for holding a substrate, a developer discharger for discharging a developer onto the substrate held in the holder, and a cup that is arranged to surround the substrate held in the holder and collects processing liquid such as the developer that has splashed from the substrate. The developing apparatus may also be provided with a cleaning liquid discharger that discharges a cleaning liquid such as water onto the substrate to clean the substrate held in the holder and supplied with the developer. The cup of the developing apparatus is provided with a drain port for discharging the developer and cleaning liquid to the outside of the cup, and the drain port is provided with a drain line.

[0010] Recently, advances in exposure technology and the like have led to further advances in miniaturization of semiconductor devices, i.e., miniaturization of resist patterns. With fine resist patterns, problems can arise if the developer or cleaning solution remains on the substrate during the above-mentioned development process. For example, when the developer or cleaning solution remains between patterns, the surface tension of the remaining developer or cleaning solution can cause so-called pattern collapse. Therefore, rinsing with a rinse solution adjusted to have a surface normal force smaller than that of water has been considered. Rinsing with such a rinse solution with a small surface force is performed, for example, after cleaning with a cleaning solution such as water.

[0011] However, when the rinse liquid, which has been adjusted to have a surface normal force smaller than that of water, is mixed with the developer in the cup or in the drain line, the mixed liquid solidifies and the resulting solids can clog the drain port or drain line.

[0012] Therefore, the technology disclosed herein prevents solidified mixtures of developer and rinse liquid from obstructing drainage in a developing device that rinses with a rinse liquid adjusted to have a surface normal force smaller than that of water.

[0013] Hereinafter, a developing device and a cleaning method therefor according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0014] (First embodiment) 1 and 2 are a vertical cross-sectional view and a horizontal cross-sectional view, respectively, that schematically show the configuration of a developing device according to Embodiment 1. Fig. 3 is a bottom view of an upper cup 103, which will be described later. 1 and 2, the developing device 1 has a housing 10 whose interior can be sealed. A loading / unloading opening 11 for a wafer W is formed on the surface of the housing 10 on the positive side in the X direction. A shutter 12 that opens and closes the loading / unloading opening 11 is provided at the loading / unloading opening 11.

[0015] 1, an exhaust port 13 is formed in the bottom wall of the housing 10 to exhaust air from the inside of the housing 10. An exhaust pipe 14 is connected to the exhaust port 13 to guide the gas exhausted from the exhaust port 13 to the outside of the developing device 1. The exhaust pipe 14 is connected to an exhaust mechanism 60 having an exhaust pump or the like via a main exhaust pipe 61.

[0016] A spin chuck 20 is provided inside the housing 10 as a holder that holds and rotates the wafer W. Specifically, the spin chuck 20 is a rotary holder that holds and rotates the wafer W, and more specifically, holds the wafer W and rotates it around a vertical axis.

[0017] The spin chuck 20 has a horizontal upper surface, and the upper surface is provided with, for example, a suction port (not shown) for sucking the wafer W. The wafer W can be held on the spin chuck 20 by suction from the suction port.

[0018] The spin chuck 20 is connected to a chuck driving mechanism 21. The chuck driving mechanism 21 has a rotation driving source (not shown) such as a motor that generates a driving force for rotating the spin chuck 20 around a vertical axis. The rotation of the spin chuck 20 by the chuck driving mechanism 21 causes the wafer W to rotate around the vertical axis.

[0019] Furthermore, the chuck driving mechanism 21 is provided with a driving source such as a cylinder that generates a driving force for raising and lowering the spin chuck 20. The spin chuck 20 is raised and lowered by the chuck driving mechanism 21, whereby the wafer W is raised and lowered. The chuck driving mechanism 21 is controlled by a control unit U, which will be described later.

[0020] In an area on the back side of the wafer W held by the spin chuck 20, a plurality of (e.g., three) lift pins 22 are provided as lifting members for transferring the wafer W between a wafer transfer mechanism outside the developing apparatus 1 and the spin chuck 20. The lift pins 22 are movable up and down by a pin drive unit 23 having a motor, a cylinder, or the like.

[0021] A cup 30 is provided inside the housing 10 so as to surround the wafer W held by the spin chuck 20. The cup 30 receives processing liquid such as a developing solution that has been shaken off or dropped from the wafer W held by the spin chuck 20, and also guides the processing liquid so that it can be discharged to the outside.

[0022] The cup 30 has an open top, i.e., an opening 30a at the top, so that the wafer W can pass through when transferring the wafer W between a wafer transfer mechanism outside the developing device 1 and the spin chuck 20. The opening 30a is provided at the center of the top of the cup 30 in a plan view.

[0023] The cup 30 includes an inner cup 101 , a lower cup 102 , and an upper cup 103 .

[0024] In plan view, the inner cup 101 is provided in the shape of an annular plate so as to surround the periphery of the plurality of lifting pins 22. The inner cup 101 has a guide wall 110 that guides processing liquid such as the developer that has spilled from the wafer W downward and outward, and a cylindrical vertical wall 111 that extends vertically downward from the outer circumferential edge of the guide wall 110.

[0025] The lower cup 102 is provided below the inner cup 101. The lower cup 102 has a bottom wall 120 in the shape of an annular plate located at the bottom, and cylindrical vertical walls 121 to 123 extending vertically upward from the bottom wall 120.

[0026] The bottom wall 120 is horizontal in the drawing, but is inclined so that the region R1 where the drain port 124 described below is provided is lower and the region R2 opposite the drain port 124 with the spin chuck 20 sandwiched therebetween is higher.

[0027] The vertical wall 121 extends vertically upward from the outer peripheral edge of the bottom wall 120, and the vertical wall 122 extends vertically upward from the inner peripheral edge of the bottom wall 120. The vertical wall 123 extends vertically upward from a position on the bottom wall 120 between the outer peripheral edge and the inner peripheral edge.

[0028] A drain port 124 for discharging a processing liquid such as a developing solution to the outside of the cup 30 is formed between the vertical wall 121 and the vertical wall 123 in the bottom wall 120. Specifically, the drain port 124 is formed between the vertical wall 121 and the vertical wall 122 in an area of ​​the bottom wall 120 opposite the loading / unloading port 11. A drain line L1 for guiding the processing liquid received in the cup 30 to the outside of the developing device 1 is connected to the drain port 124. Specifically, one end (specifically, the upstream end in the drain direction) of a drain pipe 125 of the drain line L1 is connected to the drain port 124.

[0029] In addition, between the vertical walls 122 and 123 of the bottom wall 120, an exhaust port 126 is formed to exhaust the inside of the cup 30, that is, to exhaust the gas inside the cup 30 to the outside of the cup 30.

[0030] Since the drain port 124 and the exhaust port 126 are provided at the positions described above, the vertical wall 123 functions as a partition wall extending upward from a position between the drain port 124 and the exhaust port 126 in the bottom wall 120 . The liquid discharged from the drain port 124 and the gas discharged from the exhaust port 126 can be separated by the vertical wall 123. The vertical wall 111 of the interior cup 101 is formed to be located outside the vertical wall 123 so that the liquid guided by the guide wall 110 is discharged from the drain port 124.

[0031] An exhaust pipe 127 is connected to the exhaust port 126 to guide the gas discharged from the exhaust port 126 to the outside of the developing device 1 .

[0032] The exhaust pipe 127 is connected to the exhaust mechanism 60 via a main exhaust pipe 61, similar to the exhaust pipe 14 described above. The main exhaust pipe 61 is provided with a damper 62 that switches between exhausting the interior of the housing 10 via the exhaust pipe 127 (hereinafter referred to as "housing exhaust") and exhausting the interior of the cup 30 via the exhaust pipe 127 (hereinafter referred to as "cup exhaust").

[0033] The upper cup 103 is provided in a plan view so as to cover the outer peripheries of the inner cup 101 and the lower cup 102 from above in the shape of an annular plate. The upper cup 103 has an annular plate wall 130 formed in a plan view so as to have a circular opening 130a that is slightly larger than the diameter of the wafer W. The annular plate wall 130 is inclined so as to gradually decrease in height toward the outer periphery. The annular plate wall 130 is an example of an outer periphery wall that covers the side of the wafer W held by the spin chuck 20. In other words, the annular plate wall 130 is provided so as to face the peripheral end surface of the wafer W held by the spin chuck 20.

[0034] The upper cup 103 also has a cylindrical vertical wall 131 extending vertically downward from the outer circumferential end of the annular plate wall 130, and a rib 132 that is annular in plan view and extends outward from the vertical wall 131. For example, the rib 132 is engaged with the vertical wall 121 of the lower cup 102, thereby supporting the upper cup 103 on the lower cup 102. A gap G1 between the inner circumferential surface of the upper cup 103 and the outer circumferential surfaces of the guide wall 110 and vertical wall 111 of the inner cup 101 forms an exhaust flow path that communicates with the exhaust port 126 and exhausts air around the wafer W.

[0035] Furthermore, a fan filter unit (FFU) 50 is provided above the cup 30 in the housing 10. 50 supplies clean air toward the cup 30, specifically toward the wafer W held on the spin chuck 20. The clean air supplied to the cup 30 passes through the inside of the cup 30 and is exhausted via the exhaust pipe 127.

[0036] As shown in Fig. 2, rails 40a and 40b extending along the Y direction (left-right direction in Fig. 2) are formed on the negative side in the X direction of cup 30 (the lower side in Fig. 2). Rails 40a and 40b are formed, for example, from the outside of the positive side in the Y direction of cup 30 (the left side in Fig. 2) to the outside of the negative side in the Y direction (the right side in Fig. 2). Rail 40a is provided with an arm 41, and rail 40b is provided with an arm 42.

[0037] A developer discharge nozzle 43 serving as a developer discharge unit is supported on the first arm 41. The developer discharge nozzle 43 supplies the developer to the wafer W held on the spin chuck 20. The developer is, for example, tetramethylammonium hydroxide (TMAH). For example, the developer discharge nozzle 43 is formed in a rectangular cylindrical shape with a developer discharge outlet on the underside, and the discharge outlet is formed in a rectangular shape when viewed from above, and the longitudinal length of the discharge outlet is approximately the same as the diameter of the wafer W.

[0038] The developer discharge nozzle 43 may be referred to as a liquid contact nozzle. The liquid contact nozzle has a discharge port for discharging the developer and a lower end surface that extends laterally from the discharge port and is substantially parallel to the surface of the wafer W.

[0039] The first arm 41 is movable on the rail 40a by the nozzle drive unit 44. This allows the developer dispensing nozzle 43 to move from a bath 45 installed outside the cup 30 on the positive side in the Y direction to above the center of the wafer W in the cup 30. The bath 45 houses the developer dispensing nozzle 43, specifically, the tip of the developer dispensing nozzle 43. The bath 45 also serves as a waiting section where the developer dispensing nozzle 43 waits. The first arm 41 is also movable up and down by the nozzle drive unit 44, allowing the height of the developer dispensing nozzle 43 to be adjusted. The nozzle drive unit 44 has, for example, a motor or a cylinder as a drive source that generates a driving force for driving the movement of the first arm 41 along the rail 40a and the lifting and lowering of the first arm 41.

[0040] The second arm 42 supports a cleaning liquid discharge nozzle 46 as a cleaning liquid discharge part and a rinse liquid discharge nozzle 47 as a rinse liquid discharge part.

[0041] The second arm 42 is movable on the rail 40b by the nozzle drive unit 48. This allows the nozzles 46, 47 to move from a bath 49 installed outside the cup 30 on the negative side in the Y direction to above the center of the wafer W in the cup 30. The bath 49 houses the nozzles 46, 47, specifically, the tips of the nozzles 46, 47. The bath 49 also serves as a waiting area where the nozzles 46, 47 wait. The second arm 42 is also movable up and down by the nozzle drive unit 48, allowing the height of the nozzles 46, 47 to be adjusted. The nozzle drive unit 48 has, for example, a motor or a cylinder as a drive source that generates a driving force for driving the movement of the second arm 42 along the rail 40b and for driving the second arm 42 to move up and down.

[0042] The cleaning liquid discharge nozzle 46 supplies a cleaning liquid to the wafer W held on the spin chuck 20. The cleaning liquid is, for example, water, and more specifically, DIW (Deionized Water). The rinse liquid discharge nozzle 47 supplies the rinse liquid to the wafer W held on the spin chuck 20. The rinse liquid is a processing liquid adjusted to have a surface tension lower than that of water, specifically, a processing liquid adjusted to have a surface tension lower than that of water by adding a surfactant to water. Each of the nozzles 46 and 47 is formed in a cylindrical shape having a discharge port for the cleaning liquid or the rinsing liquid on the lower surface.

[0043] The developer discharge nozzle 43, cleaning liquid discharge nozzle 46, and rinsing liquid discharge nozzle 47 are connected to supply mechanisms (not shown) for the developer, cleaning liquid, and rinsing liquid, respectively. Each supply mechanism has, for example, a supply pipe connected at one end to a supply source of the corresponding processing liquid. This supply pipe is provided with a group of supply devices for controlling the supply of the processing liquid from the supply source to the corresponding nozzle. The group of supply devices has, for example, a supply valve that switches on and off the supply of the processing liquid and a flow rate adjustment valve that adjusts the flow rate of the processing liquid. The supply devices are controlled by a control unit U, which will be described later.

[0044] The developing device 1 further includes a control unit U. The control unit U processes computer-executable instructions that cause the developing device 1 to perform the various processes described in this disclosure. The control unit U may be configured to control each element of the developing device 1 to perform the various processes described herein. In one embodiment, part or all of the control unit U may be included in the developing device 1. The control unit U may include a processing unit, a storage unit, and a communication interface. The control unit U may be implemented, for example, by a computer. The processing unit may be configured to read from the storage unit a program that provides logic or routines that enable various control operations and execute the read program to perform various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit). The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the developing device 1 via a communication line such as a LAN (Local Area Network).

[0045] Furthermore, as shown in FIG. 1, the developing device 1 is provided with a solidification suppression fluid supply unit 200 that supplies a solidification suppression fluid to the inside of the developing device 1. The solidification suppression fluid is a fluid that suppresses solidification caused by mixing of the developer and rinse liquid by discharging or modifying the developer liquid within the rinse liquid flow path space. The solidification suppression fluid is, for example, a cup cleaning liquid that is a cleaning liquid different from the rinse liquid, and more specifically, a processing liquid that is less reactive with the developer than the rinse liquid, and more specifically, water.

[0046] In this embodiment, the solidification suppression fluid supply unit 200 supplies the cup cleaning liquid into the cup 30 from the inner wall surface of the annular plate wall 130 of the upper cup 103 of the cup 30. The solidification suppression fluid supply unit 200 discharges the cup cleaning liquid into the cup 30 from a discharge port 201 provided on the inner wall surface of the annular plate wall 130. A through hole 202 penetrating in the vertical direction is provided in the annular plate wall 130, and the lower end of the through hole 202 forms the discharge port 201.

[0047] A plurality of discharge ports 201 are provided in the following regions, for example: A first region R1 in which the drain port 124 is provided and a second region R2 that faces the first region R1 across the spin chuck 20 and is higher than the first region R1. The second region R2 is located at the outer peripheral end of the annular plate wall 130. 3, the discharge ports 201 are provided, for example, in the second region R2 at the following first to third positions P1 to P3. That is, in the second region R2, the discharge ports 201 are provided at a first position P1, which is the highest position in the circumferential direction around the spin chuck 20, a second position P2 on the positive side of the first position P1 in the circumferential direction, and a third position P3 on the negative side of the first position P1 in the circumferential direction. In the example shown in the figure, one discharge port 201 is provided at the first position P1, and two discharge ports 201 are provided at each of the second position P2 and the third position P3.

[0048] 1, each discharge port 201 is provided, for example, at a position lower than the wafer W held by the spin chuck 20. Specifically, each discharge port 201 is provided, for example, at a position lower than the upper surface of the wafer W held by the spin chuck 20.

[0049] There may be provided only one discharge port 201. In this case, the discharge port 201 is formed, for example, in an elliptical shape in plan view. An alignment mechanism (not shown) is provided to align the upper cup 103 and the lower cup 102 in the circumferential direction around the center of the spin chuck 20. This alignment allows the discharge port 201 to be reliably positioned in the first region R1 where the drain port 124 is provided and the second region R2 that faces the first region R1 with the spin chuck 20 therebetween.

[0050] The solidification suppression fluid supply unit 200 includes, for example, a fixed block 210 and a supply assembly 220 .

[0051] The fixed block 210 is fixed to the upper cup 103, specifically, by welding or the like to the upper surface of the annular plate wall 130. A flow path 211 is provided inside the fixed block 210. When the fixed block 210 is fixed to the upper cup 103, one end of the flow path 211 communicates with the through-hole 202 of the upper cup 103.

[0052] As shown in FIGS. 1 and 2, the supply assembly 220 includes a supply block 221, a connecting pipe 222, and a detachable joint 223.

[0053] The supply block 221 is fixed to the fixed block 210 by screwing or the like. A flow path 224 is provided inside the supply block 221. When the supply block 221 is fixed to the fixed block 210, one end of the flow path 224 communicates with the other end of the flow path 211 of the fixed block 210.

[0054] The connecting pipe 222 connects the supply block 221 and the detachable joint 223. One end of the connecting pipe 222 is connected to the other end of the flow path 224 of the supply block 221, and the other end of the connecting pipe 222 is connected to one end of the detachable joint 223. The connecting pipe 222 is arranged along the upper cup 103.

[0055] Detachable joint 223 detachably connects supply assembly 220 to cup cleaning liquid supply mechanism 300. Supply mechanism 300 has supply pipe 302, one end of which is connected to cup cleaning liquid supply source 301. One end of detachable joint 223 is connected to the other end of connection pipe 222 as described above, and the other end of detachable joint 223 is connected to the other end of supply pipe 302. The connection between the detachable joint 223 and the supply pipe 302 is made on the front side of the semiconductor manufacturing apparatus, such as a coating and developing apparatus, in which the developing apparatus 1 is mounted, opposite the loading / unloading port 11 in the housing 10. The feed assembly 220 is replaceable together with the upper cup 103 and is also replaceable or maintainable separately from the upper cup 103 .

[0056] Supply pipe 302 of supply mechanism 300 is provided with a group of supply devices (not shown) for controlling the supply of cup cleaning liquid from a cup cleaning liquid supply source to discharge port 201 via supply assembly 220. The group of supply devices includes, for example, a supply valve that switches between supply and stop of cup cleaning liquid and a flow rate adjustment valve that adjusts the flow rate of cup cleaning liquid. The above supply equipment group is controlled by a control unit U.

[0057] <Example of processing sequence> Next, a description will be given of an example of a processing sequence executed by the developing device 1. Figure 4 is a flowchart showing the main steps of the processing sequence executed by the developing device 1.

[0058] (Step S1: Wafer loading) First, the wafer W is carried into the developing apparatus 1. Specifically, first, a wafer transfer mechanism (not shown) holding a wafer W is inserted into the housing 10 from outside the housing 10 through the loading / unloading port 11 provided on the side of the housing 10. Then, the wafer W is transferred to above the spin chuck 20. Next, the lift pins 22 are raised and protrude a predetermined distance from the upper surface of the spin chuck 20, and the wafer W is transferred onto the lift pins 22. Next, the lift pins 22 are lowered. As a result, the wafer W is lowered, passes through the opening 30a of the cup 30, and is transferred to the upper surface of the spin chuck 20. Then, the wafer W is suction-held on the spin chuck 20.

[0059] (Step S2: Development) Subsequently, the wafer W is developed with a developer.

[0060] Specifically, first, a developer is supplied to the wafer W held on the spin chuck 20, and a puddle (liquid film) of the developer is formed on the wafer W. More specifically, the developer discharging nozzle 43 is moved above the wafer W. Then, the developer discharging nozzle 43 starts discharging the developer onto the wafer W, and a puddle of the developer is formed. Once the puddle of the developer is formed, the developer discharging nozzle 43 stops discharging the developer, and the developer discharging nozzle 43 is retracted from above the wafer W.

[0061] Once the puddle of developer is formed, the puddle is maintained on the wafer W, and static development of the resist film on the wafer W is carried out. Of the developer discharged from the developer discharge nozzle 43, the part that does not contribute to the formation of a puddle of developer is collected in the cup 30 and discharged to the outside of the cup 30 through the drain port 124.

[0062] (Step S3: Cleaning) Next, the wafer W is cleaned with a cleaning liquid. Specifically, cleaning liquid discharge nozzle 46 is moved above the center of wafer W held by spin chuck 20. Then, cleaning liquid is supplied from cleaning liquid discharge nozzle 46 onto the rotating wafer W, and the developer containing dissolved components of the resist film is discharged from above wafer W and replaced with cleaning liquid. The cleaning liquid is also discharged from above wafer W. The developer and cleaning liquid discharged from above wafer W are discharged outside cup 30 via drain port 124.

[0063] rinse (Step S4: Rinse) Subsequently, the substrate is rinsed with a rinse liquid. Specifically, the rinse liquid discharge nozzle 47 is moved above the center of the wafer W held by the spin chuck 20. Then, the rinse liquid is supplied from the rinse liquid discharge nozzle 47 onto the wafer W, which continues to rotate from step S3, and the cleaning liquid is discharged from the wafer W and replaced with the rinse liquid. The rinse liquid is also discharged from the wafer W. The cleaning liquid and rinse liquid discharged from the wafer W are discharged outside the cup via the drain port 124. However, if the amount of cleaning liquid used in the previous cleaning step is small, a large amount of developer may remain in the cup 30 after the cleaning step is completed, and a large amount of developer may remain in the cup 30 after the rinsing step as well.

[0064] (Step S5: Drying and cleaning of cup 30) Thereafter, the wafer W is dried. Specifically, the wafer W is rotated following step S4 without the addition of a processing liquid such as a rinse liquid, thereby draining the rinse liquid from the wafer W and drying the wafer W. If any developer remains in the cup 30 after the rinse step, it may remain in the cup 30 in a state mixed with the rinse liquid drained from the wafer W in the drying step. If the mixture of developer and rinse liquid remains in the cup 30 for a long time, it will solidify and cause clogging of the drain port 124 and the drain line L1.

[0065] Therefore, in this example, the cup 30 is cleaned in parallel with the drying of the wafer W. Specifically, in parallel with the rotation of the wafer W, the solidification suppression fluid supply unit 200 discharges the cup cleaning liquid from the discharge port 201 into the cup 30. In step S4, the discharge pressure of the cup cleaning liquid from discharge port 201 is such that the cup cleaning liquid flows down along the inner wall surface of cup 30 from discharge port 201. Furthermore, discharge port 201 is formed at a position where the cup cleaning liquid flows down along the inner wall surface of cup 30 even when the cup cleaning liquid is discharged vertically downward from discharge port 201. The cup cleaning liquid that flows down from the discharge port 201 along the inner wall surface of the cup 30 flows along the slope of the bottom wall of the cup 30 toward the drain port 124 and is discharged to the outside of the cup 30 through the drain port 124. As a result, even if any developing liquid remains in the cup 30 at the start of this process, it can be discharged to the outside of the cup 30, and even if a rinsing liquid is discharged from the wafer W into the cup 30 during this process, it can be discharged to the outside of the cup. Therefore, it is possible to prevent a mixture of the developing liquid and the rinsing liquid from remaining in the cup 30.

[0066] (Step S6: Carry out) After drying, the wafer W is carried out from the developing apparatus 1. Specifically, the wafer W is unloaded from the developing apparatus 1 in the reverse order of step S1. This completes the processing sequence.

[0067] <Major Effects of This Embodiment> As described above, the developing device 1 is provided with the solidification suppression fluid supply unit 200 that supplies the solidification suppression fluid to the inside of the developing device 1. Therefore, the developing device 1 can prevent the solidified mixture of the developer and cleaning liquid from interfering with drainage.

[0068] Specifically, in the developing device 1, a cup cleaning liquid is discharged into the cup 30 as a solidification suppression fluid. Therefore, the cup cleaning liquid can discharge the processing liquid such as the rinse liquid in the cup 30 to the outside of the cup 30, and it is possible to prevent the mixed liquid of the developer and the cleaning liquid from remaining in the cup 30. Therefore, it is possible to prevent the solidified matter of the mixed liquid of the developer and the cleaning liquid from clogging the drain outlet 124 and the like and hindering the liquid from being discharged.

[0069] Unlike the present embodiment, the inside of the cup 30 can also be cleaned by supplying the cleaning liquid discharged from the cleaning liquid discharge nozzle 46 into the cup 30 via a dummy wafer W held on the spin chuck 20, thereby preventing a mixture of the developer and the cleaning liquid from remaining in the cup 30. However, this method requires cleaning the inside of the cup 30 separately in addition to the main processes of developing the wafer W with the developer, cleaning the wafer W with the cleaning liquid, rinsing the wafer W with the rinse liquid, and drying the wafer W, which increases the processing time. In contrast, in the present embodiment, the cup cleaning liquid is supplied from the inner wall surface of the annular plate wall 130 of the upper cup 103 of the cup 30, so that drying of the wafer W and cleaning of the cup 30 with the cup cleaning liquid can be performed in parallel. Therefore, according to the present embodiment, it is possible to prevent the processing time from increasing due to cleaning of the cup 30 with the cup cleaning liquid. That is, according to this embodiment, it is possible to prevent the processing time from being prolonged, while also preventing the solidified mixture of the developer and cleaning liquid from interfering with drainage.

[0070] In the present embodiment, a plurality of outlets 201 are provided in a second region R2 that faces the first region R1, in which the drain port 124 is provided, across the spin chuck 20 and is higher than the first region R1. Unlike the present embodiment, if the outlets 201 are provided in the second region R2 only at a first position P1, which is the highest position in the circumferential direction around the spin chuck 20, the cup cleaning liquid discharged from the outlets 201 may be supplied biased toward one of the positive and negative circumferential sides of the first position P1 of the cup 30 in a plan view. In contrast, in the present embodiment, the outlets 201 are provided in the second region at the first position P1, a second position P2 on the positive circumferential side of the first position P1, and a third position P3 on the negative circumferential side of the first position P1. Therefore, the cup cleaning liquid discharged from the outlets 201 is supplied approximately evenly to both the positive and negative circumferential sides of the first position P1 of the cup 30 in a plan view. Therefore, a larger amount of the mixture of the developer and cleaning liquid in the cup 30 can be more reliably discharged to the outside of the cup 30. This more reliably prevents the drain outlet 124 and the like from being clogged with solidified matter of the mixture of the developer and cleaning liquid, thereby preventing the liquid from being discharged.

[0071] Furthermore, in this embodiment, each discharge port 201 is provided at a position lower than the wafer W held on the spin chuck 20. Therefore, even if a mist of the cup cleaning liquid is generated when the cup cleaning liquid is discharged from the discharge port 201, the mist can be prevented from reaching the wafer W held on the spin chuck 20. Therefore, the wafer W held on the spin chuck 20 can be prevented from being affected by the mist of the cup cleaning liquid generated when the cup cleaning liquid is discharged from the discharge port 201.

[0072] <Another example of Cup 30 cleaning timing> In the above example, the cup 30 is cleaned with the cup cleaning liquid in parallel with the drying of the wafer W, but the timing for cleaning the cup 30 with the cup cleaning liquid is not limited to this. For example, the cup 30 may be cleaned with the cup cleaning liquid after the wafer W is dried and before the supply of the developer to the next wafer W is started. Furthermore, cleaning of the cup 30 with the cup cleaning liquid may be continued from while the wafer W is drying (i.e., immediately after the supply of the rinsing liquid is stopped) until before the supply of the developing liquid to the next wafer W is started. This allows the cup 30 to be cleaned with the cup cleaning liquid for a long period of time, which more reliably prevents the mixture of the developing liquid and the rinsing liquid from remaining in the cup 30. Furthermore, cleaning of the cup 30 with the cup cleaning liquid may be performed in parallel with at least one of development with the developer, cleaning with the cleaning liquid, and rinsing with the rinse liquid.

[0073] <Modification of the position of the outlet> In the above example, the discharge port 201 is provided in the upper cup 103. Alternatively, or in addition, the discharge port 201A of the solidification suppression fluid supply unit 200A may be provided in the lower cup 102A of the cup 30A, as shown in Fig. 5. Specifically, the discharge port 201A may be formed by the inner end of a through-hole 202A that horizontally penetrates the vertical wall 121A of the lower cup 130A.

[0074] In this case, the discharge port 201A is provided below the upper end of the vertical wall 123. Specifically, the discharge port 201A is provided so that its upper end is located below the upper end of the vertical wall 123. Furthermore, by providing the discharge port 201A at such a position, the cup cleaning liquid can be discharged from the discharge port 201A without interference with the processing liquid scattered from the wafer W or the mist generated from the scattered processing liquid.

[0075] In the illustrated example, the upper cup 103A is not provided with the discharge port 201 shown in FIG. 1 and the like.

[0076] (Second embodiment) FIG. 6 is a diagram schematically illustrating the configuration of a developing device according to the second embodiment. The developing device 1B in FIG. 6 will be described below, focusing on the differences from the developing device 1 in FIG.

[0077] 1 is provided with a discharge port 201 for discharging the solidification suppression fluid, and is equipped with components such as a fixed block 210 that constitute a solidification suppression fluid supply unit 200. In contrast, the cup 30B of the developing device 1B in FIG. 6 is not equipped with a discharge port for discharging the solidification suppression fluid, and is not equipped with components that constitute a solidification suppression fluid supply unit.

[0078] In the developing device 1 shown in FIG. 1 and other figures, the solidification suppression fluid supply unit 200 supplies a cup cleaning liquid as a solidification suppression fluid into the cup 30. In contrast, in the developing device 1B shown in FIG. 6, the solidification suppression fluid supply unit 200B supplies an acid as a solidification suppression fluid to the drain line L1B connected to the drain port 124. Specifically, the acid is acetic acid. The acid is supplied, for example, as an acid-containing gas. The acid-containing gas is, for example, a mixed gas of acid vapor or acid mist and a carrier gas such as nitrogen gas.

[0079] For example, the solidification suppression fluid supply unit 200B supplies an acid-containing gas to the drainage line L1B from a confluence line L2 that joins the drainage line L1B.

[0080] The junction line L2 has a junction pipe 400 that connects the bus 45B and the drain line L1B. Specifically, the junction pipe 400 connects a drain box 500 provided in the drain line L1B to the bus 45B. One end of a drain pipe 125, the other end of which is connected to the drain port 124, is connected to the drain box 500. In addition, the drain box 500 is connected to drain pipes 125 from multiple developing devices 1, and is further connected to a discharge pipe 501 that guides the processing liquid in the drain box 500 to the outside of the semiconductor manufacturing apparatus in which the developing device 1 is installed.

[0081] Specifically, the solidification suppression fluid supply unit 200B supplies the acid-containing gas from the confluence line L2 to the drain line L1 by discharging the acid-containing gas into the bus 45B from a discharge port 201B provided in the bus 45B. Note that the confluence line L2 and the drain line L1 are under negative pressure relative to the interior of the bus 45B, so that the acid-containing gas is supplied to the drain line L1 via the confluence line L2 simply by discharging the acid-containing gas from the bus 45B.

[0082] The discharge port 201B is connected to a supply mechanism 600 for an acid-containing gas. The supply mechanism 600 has a supply pipe 601 that connects an acid-containing gas supply source (not shown) and the discharge port 201B. The supply pipe 601 is provided with a supply device group 602 for controlling the supply of acid-containing gas from the acid-containing gas supply source to the discharge port 201B. The supply device group 602 includes, for example, a supply valve that switches on and off the supply of acid-containing gas and a flow rate adjustment valve that adjusts the flow rate of the acid-containing gas. The supply equipment group 602 is controlled by a control unit U.

[0083] <Example of processing sequence> Next, an example of a processing sequence executed by the developing device 1B will be described. Figure 7 is a flowchart showing the main steps of the processing sequence executed by the developing device 1B.

[0084] (Step S1: Wafer loading) First, the wafer W is carried into the developing apparatus 1.

[0085] (Step S2B: Development and Supply of Acid-Containing Gas) Subsequently, the wafer W is developed with a developer, and an acid-containing gas is supplied to the drain line L1 as a solidification suppression fluid.

[0086] Specifically, in parallel with the above-mentioned step S2, the acid-containing gas is discharged from the discharge port 201B into the bath 45B, and the acid-containing gas is supplied to the drain box 500 of the drain line L1 via the confluence line L2. As a result, the alkaline developer that is discharged to the outside of the cup 30 through the drain port 124 during development and collected in the drain box 500 is made closer to neutral by the acid-containing gas. The above-mentioned bringing the developer closer to neutral is an example of modifying the developer by the solidification suppression fluid.

[0087] (Step S3: Cleaning) Next, the wafer W is cleaned with a cleaning liquid.

[0088] (Step S4: Rinse) Subsequently, the substrate is rinsed with a rinse liquid.

[0089] (Step S5B: Drying) Thereafter, the wafer W is dried. Specifically, the wafer W is rotated continuously from step S4 without being treated with a processing liquid such as a rinse liquid, whereby the rinse liquid is discharged from the wafer W and the wafer W is dried. The rinse liquid discharged from the wafer W in step S4 or step S3 is discharged out of the cup 30 through the drain port 124 and collected in the drain box 500, where it is mixed with the developer. According to the inventor's extensive research, if the developer discharged out of the cup 30 is mixed with the rinse liquid while still alkaline, the mixed liquid may solidify depending on the type of rinse liquid. This is thought to be because, if the developer discharged out of the cup 30 is alkaline, a photoacid generator (PAG) in the resist film contained in the developer reacts with components in the rinse liquid, resulting in precipitation. In contrast, in this embodiment, the developer to be mixed with the rinse liquid is neutralized by the acid-containing gas in step S2B. The inventor has confirmed that, when the developer discharged out of the cup 30 is neutralized and then mixed with the rinse liquid, solidification of the mixed liquid is suppressed, even if a rinse liquid that would solidify as described above if the developer remained alkaline is used.

[0090] (Step S6: Carry out) After step S5B, the wafer W is unloaded from the developing apparatus 1. This completes the processing sequence.

[0091] <Major Effects of This Embodiment> As described above, in the developing device 1B, the solidification suppression fluid supply unit 200B supplies an acid-containing gas as a solidification suppression fluid to the drain line L1B (specifically, to the drain box 500) connected to the drain port 124. This makes it possible to make the developer in the drain line L1 (specifically, in the drain box 500) closer to neutral. This therefore makes it possible to suppress solidification of the mixture of the developer and the rinse liquid in the drain line L1 (specifically, in the drain box 500). This therefore makes it possible to suppress clogging of the drain line L1, etc., due to solidified matter of the mixture of the developer and the rinse liquid, which would hinder drainage.

[0092] <Other examples of acids as solidification-inhibiting fluids> Although acetic acid has been cited above as an example of an acid used as a solidification-inhibiting fluid, the acid used as a solidification-inhibiting fluid may be an acid other than acetic acid. However, taking into consideration the resistance of components through which the solidification-inhibiting fluid flows, it is preferable that the acid used as a solidification-inhibiting fluid be a weak acid. Furthermore, it is believed that acetic acid may react with the developer to produce acetate salts such as calcium acetate, sodium acetate, potassium acetate, zinc acetate, and magnesium acetate. Of these acetate salts, calcium acetate has the lowest solubility in water, at 34.7 mg / 100 mL, making it less likely to clog pipes. From this perspective, it is preferable to use acetic acid as the acid used as a solidification-inhibiting fluid.

[0093] In the above examples, the acid used as the solidification suppression fluid is an acid-containing gas, but it may also be a liquid acid. However, by supplying an acid-containing gas as the acid, it is possible to supply the acid to the portion of the drain line L1B upstream in the drainage direction from the connection portion with the junction line L2 (specifically, the portion upstream in the drainage direction of the drain box 500). Therefore, the developer in the portion can be made closer to neutral with the acid, thereby preventing the portion from being clogged due to solidification of the mixture of the developer and the rinse liquid. Furthermore, by supplying an acid-containing gas as the acid, the amount of acid supplied can be easily adjusted, and therefore the pH of the developer can be easily adjusted.

[0094] <Other examples of timing for supplying acid-containing gas> In the above example, acid is supplied to the drain line L1B during development, but instead of or in addition to this, acid may be supplied to the drain line L1B at at least one of the following times: during cleaning with a cleaning liquid, during rinsing with a rinse liquid, and during drying of the wafer W. Furthermore, an acid may be supplied to the drain line L1B before supplying the developer.

[0095] <Other examples of acid supply locations> 8, a confluence pipe 400C connecting the bus 45 and the drain box 500 may be provided with an on-off valve 401 for opening and closing the confluence pipe 400C, and the solidification suppression fluid supply unit 200C may close the on-off valve 401 and discharge acid from the on-off valve 401 in the confluence pipe 400C downstream in the drainage direction, thereby supplying the acid from the confluence pipe 400C to the drainage line L1B. In this case, the solidification suppression fluid supply unit 200C discharges acid into the confluence pipe 400C from a discharge port (not shown) provided in the confluence pipe 400C downstream in the drainage direction from the on-off valve 401. In this example, the supplied acid can be more reliably prevented from leaking from the bath 45 into the space within the housing 10. In this case, in parallel with the cleaning of the developer discharge nozzle 43 in the bath 45, acid may be discharged from the junction pipe 400C to the drain line L1.

[0096] Furthermore, in the above examples, the solidification suppression fluid supply unit discharges acid into the bus 45 or the junction pipe 400C connected to the bus 45. Alternatively, the solidification suppression fluid supply unit may discharge acid into the bus 49 to supply acid to the drain line L1B, or may discharge acid into the junction pipe connecting the bus 49 and the drain box 500 to supply acid to the drain line L1B. Furthermore, the solidification suppression fluid supply unit may supply the acid directly to the drain line L1B. Specifically, the acid may be supplied directly to the drain box 500, for example.

[0097] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0098] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0099] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) A developing device for developing a substrate with a developing solution, a holder for holding the substrate; a cup provided to surround the substrate held by the holder; a developer discharging unit that discharges a developer onto the substrate held by the holder; a rinse liquid discharge unit that discharges a rinse liquid, the rinse liquid being adjusted to have a surface normal force lower than that of water, onto the substrate held by the holder; The developing device has a solidification suppression fluid supply unit therein that supplies a solidification suppression fluid that suppresses solidification of the mixture of the developer and the rinse liquid. The "inside of the developing device" refers to at least one of the space inside the cup and the exhaust pipe from the cup to the drain box. (2) The cup has an outer peripheral wall that covers the side of the substrate held by the holder, The developing device according to (1), wherein the solidification suppression fluid supply unit supplies a cup cleaning liquid, which is a cleaning liquid different from the rinse liquid, as the solidification suppression fluid into the cup from the inner wall surface of the outer peripheral wall of the cup. (3) The cup has a drain port for discharging the developing solution and the rinsing solution to the outside of the cup and a discharge port for discharging the cup cleaning solution, the solidification suppression fluid supply unit discharges the cup cleaning liquid into the cup from a discharge port provided on an inner wall surface of the outer peripheral wall of the cup; The discharge port is a plurality of the drain ports are provided in a second region that faces the first region in which the drain port is provided and that is higher than the first region, with the holding portion interposed therebetween; The developing device described in (2) is provided in the second region at a first position which is the highest position in the circumferential direction centered on the holding portion, a second position on the positive side of the circumferential direction of the first position, and a third position on the negative side of the circumferential direction of the first position. (4) The cup is a discharge port for discharging the cup cleaning liquid; a bottom wall of the cup having a drain port for discharging the developing solution and the rinsing solution to the outside of the cup and an exhaust port for exhausting air from the cup; a partition wall extending upward from a position on the bottom wall between the exhaust port and the drain port; the solidification suppression fluid supply unit discharges the cup cleaning liquid from the discharge port into the cup; The developing device according to (2) or (3), wherein the discharge port is provided below an upper end of the partition wall. (5) the cup has a drain port for discharging the developer and the rinse liquid to the outside of the cup; The developing device according to any one of (1) to (4), wherein the solidification suppression fluid supply unit supplies an acid as the solidification suppression fluid to a drain line connected to the drain port. (6) The developing device according to (5), wherein the solidification suppression fluid supplying section supplies the acid to the drainage line from a confluence line that joins the drainage line. (7) The developing device further includes a bath that accommodates at least one of the developer discharge unit and the rinse liquid discharge unit, the confluence line has a confluence pipe connecting the bus and the drainage line, The developing device according to (6), wherein the solidification suppression fluid supplying section discharges the acid into the bath and supplies the acid from the junction pipe to the drain line. (8) The developing device further includes a bath that accommodates at least one of the developer discharge unit and the rinse liquid discharge unit, the confluence line includes a confluence pipe that connects the bath and the drainage line, and an on-off valve that opens and closes the confluence pipe; The developing device according to (6) or (7), wherein the solidification suppression fluid supply unit closes the on-off valve and discharges the acid downstream of the on-off valve in the confluence pipe in the drainage direction, thereby supplying the acid from the confluence pipe to the drainage line. (9) The developing device according to any one of (5) to (8), wherein the acid is an acid-containing gas. (10) A method for cleaning a developing device that develops a substrate with a developing solution, comprising: The developing device is a holder for holding the substrate; a cup provided to surround the substrate held by the holder; a developer discharging unit that discharges a developer onto the substrate held by the holder; a rinse liquid discharge unit that discharges a rinse liquid, the rinse liquid being adjusted to have a surface normal force lower than that of water, onto the substrate held by the holder; The cleaning method comprises: A method for cleaning a developing device, comprising: supplying, into the inside of the developing device, a solidification suppression fluid that suppresses solidification of a mixture of the developer and the rinse liquid. (11) The cup has an outer peripheral wall that covers the side of the substrate held by the holder, The method for cleaning a developing device according to (10), wherein the supplying step supplies a cup cleaning liquid, which is a cleaning liquid different from the rinse liquid, as the solidification suppression fluid into the cup from the inner wall surface of the outer peripheral wall of the cup. (12) The cup has a drain port for discharging the developing solution and the rinsing solution to the outside of the cup, and a discharge port for discharging the cup cleaning solution, The supplying step includes discharging the cup cleaning liquid into the cup from a discharge port provided on an inner wall surface of the outer peripheral wall of the cup; The discharge port is a plurality of the drain ports are provided in a second region that faces the first region in which the drain port is provided and that is higher than the first region, with the holding portion interposed therebetween; The method for cleaning a developing device described in (11) above, wherein the developing device is provided at a first position which is the highest position in a circumferential direction centered on the holding portion, a second position on the positive side of the circumferential direction of the first position, and a third position on the negative side of the circumferential direction of the first position. (13) The cup is a discharge port for discharging the cup cleaning liquid; a bottom wall of the cup having a drain port for discharging the developing solution and the rinsing solution to the outside of the cup and an exhaust port for exhausting air from the cup; a partition wall extending upward from a position on the bottom wall between the exhaust port and the drain port; The supplying step includes discharging the cup cleaning liquid into the cup from the discharge port; The method for cleaning a developing device according to (11) or (12), wherein the discharge port is provided below an upper end of the partition wall. (14) The cup has a drain port for discharging the developer and the rinse liquid to the outside of the cup, The method for cleaning a developing device according to any one of (10) to (13), wherein the supplying step supplies an acid as the solidification suppression fluid to a drain line connected to the drain port. (15) The method for cleaning a developing device according to (14), wherein the supplying step supplies the acid to the drain line from a confluence line that joins the drain line. (16) The developing device further includes a bath that accommodates at least one of the developer discharge unit and the rinse liquid discharge unit, the confluence line has a confluence pipe connecting the bus and the drainage line, The method for cleaning a developing device according to (15), wherein the supplying step includes discharging the acid into the bath and supplying the acid from the junction pipe to the drain line. (17) The developing device further includes a bath that accommodates at least one of the developer discharge unit and the rinse liquid discharge unit, the confluence line includes a confluence pipe that connects the bath and the drainage line, and an on-off valve that opens and closes the confluence pipe; The method for cleaning a developing device according to (15) or (16), wherein the supplying step includes closing the on-off valve, discharging the acid into the confluence pipe downstream of the on-off valve in the drainage direction, and supplying the acid from the confluence pipe to the drainage line. (18) The method for cleaning a developing device according to any one of (14) to (17), wherein the acid is an acid-containing gas. [Explanation of symbols]

[0100] 1, 1B developing device 20 Spin Chuck 30, 30A, 30B cups 43 Developer discharge nozzle 47 Rinse liquid discharge nozzle 200, 200A, 200B, 200C Anti-solidification fluid supply section W wafer

Claims

1. A developing device that develops a substrate with a developer, a holder for holding the substrate; a cup provided to surround the substrate held by the holder; a developer discharging unit that discharges a developer onto the substrate held by the holder; a rinse liquid discharge unit that discharges a rinse liquid, the rinse liquid being adjusted to have a surface normal force lower than that of water, onto the substrate held by the holder; The developing device has a solidification suppression fluid supply unit therein that supplies a solidification suppression fluid that suppresses solidification of the mixture of the developer and the rinse liquid.

2. the cup has an outer peripheral wall that covers a side of the substrate held by the holder, 2. The developing device according to claim 1, wherein the solidification suppression fluid supplying section supplies, as the solidification suppression fluid, a cup cleaning liquid which is a cleaning liquid different from the rinse liquid into the cup from an inner wall surface of the outer peripheral wall of the cup.

3. the cup has a drain port for discharging the developing solution and the rinsing solution to the outside of the cup, and a discharge port for discharging the cup cleaning solution; the solidification suppression fluid supply unit discharges the cup cleaning liquid into the cup from a discharge port provided on an inner wall surface of the outer peripheral wall of the cup; The discharge port is a plurality of the drain ports are provided in a second region that faces the first region in which the drain port is provided and that is higher than the first region, with the holding portion interposed therebetween; 3. The developing device according to claim 2, wherein the developing device is provided in the second region at a first position which is the highest position in a circumferential direction centered on the holding portion, a second position on the positive side of the circumferential direction of the first position, and a third position on the negative side of the circumferential direction of the first position.

4. The cup is a discharge port for discharging the cup cleaning liquid; a bottom wall of the cup having a drain port for discharging the developing solution and the rinsing solution to the outside of the cup and an exhaust port for exhausting air from the cup; a partition wall extending upward from a position on the bottom wall between the exhaust port and the drain port; the solidification suppression fluid supply unit discharges the cup cleaning liquid from the discharge port into the cup; 3. The developing device according to claim 2, wherein the discharge port is provided below an upper end of the partition wall.

5. the cup has a drain port for discharging the developing solution and the rinsing solution to the outside of the cup, 2. The developing device according to claim 1, wherein the solidification suppression fluid supply section supplies an acid as the solidification suppression fluid to a drain line connected to the drain port.

6. 6. The developing device according to claim 5, wherein the solidification suppression fluid supplying section supplies the acid to the drain line from a confluence line that joins the drain line.

7. a bath that accommodates at least one of the developer discharge unit and the rinse liquid discharge unit; the confluence line has a confluence pipe connecting the bus and the drainage line, 7. The developing device according to claim 6, wherein the solidification suppression fluid supplying section discharges the acid into the bath and supplies the acid from the junction pipe to the drain line.

8. a bath that accommodates at least one of the developer discharge unit and the rinse liquid discharge unit; the confluence line includes a confluence pipe that connects the bath and the drainage line, and an on-off valve that opens and closes the confluence pipe; 7. The developing device according to claim 6, wherein the solidification suppression fluid supply unit closes the on-off valve and then discharges the acid downstream of the on-off valve in the confluence pipe in the drainage direction, thereby supplying the acid from the confluence pipe to the drainage line.

9. 9. The developing device according to claim 5, wherein the acid is an acid-containing gas.

10. A method for cleaning a developing device that develops a substrate with a developer, comprising: The developing device is a holder for holding the substrate; a cup provided to surround the substrate held by the holder; a developer discharging unit that discharges a developer onto the substrate held by the holder; a rinse liquid discharge unit that discharges a rinse liquid, the rinse liquid being adjusted to have a surface normal force lower than that of water, onto the substrate held by the holder; The cleaning method comprises: A method for cleaning a developing device, comprising: supplying, into the inside of the developing device, a solidification suppression fluid that suppresses solidification of a mixture of the developer and the rinse liquid.

11. the cup has an outer peripheral wall that covers a side of the substrate held by the holder, 11. The method for cleaning a developing device according to claim 10, wherein the supplying step supplies, as the solidification suppression fluid, a cup cleaning liquid that is a cleaning liquid different from the rinse liquid into the cup from an inner wall surface of the outer peripheral wall of the cup.

12. the cup has a drain port for discharging the developing solution and the rinsing solution to the outside of the cup, and a discharge port for discharging the cup cleaning solution; The supplying step includes discharging the cup cleaning liquid into the cup from a discharge port provided on an inner wall surface of the outer peripheral wall of the cup; The discharge port is a plurality of the drain ports are provided in a second region that faces the first region in which the drain port is provided and that is higher than the first region, with the holding portion interposed therebetween; 12. The method for cleaning a developing device according to claim 11, wherein the developing device is provided at a first position which is the highest position in a circumferential direction centered on the holding portion, a second position on the positive side of the circumferential direction of the first position, and a third position on the negative side of the circumferential direction of the first position.

13. The cup is a discharge port for discharging the cup cleaning liquid; a bottom wall of the cup having a drain port for discharging the developing solution and the rinsing solution to the outside of the cup and an exhaust port for exhausting air from the cup; a partition wall extending upward from a position on the bottom wall between the exhaust port and the drain port; The supplying step includes discharging the cup cleaning liquid into the cup from the discharge port; 12. The method for cleaning a developing device according to claim 11, wherein the discharge port is provided below an upper end of the partition wall.

14. the cup has a drain port for discharging the developing solution and the rinsing solution to the outside of the cup, 11. The method for cleaning a developing device according to claim 10, wherein the supplying step supplies an acid as the solidification suppression fluid to a drain line connected to the drain port.

15. 15. The method for cleaning a developing device according to claim 14, wherein the supplying step supplies the acid to the drain line from a confluence line that joins the drain line.

16. the developing device further includes a bath that accommodates at least one of the developer discharge unit and the rinse liquid discharge unit; the confluence line has a confluence pipe connecting the bus and the drainage line, 16. The method for cleaning a developing device according to claim 15, wherein the supplying step comprises discharging the acid into the bath and supplying the acid from the junction pipe to the drain line.

17. the developing device further includes a bath that accommodates at least one of the developer discharge unit and the rinse liquid discharge unit; the confluence line includes a confluence pipe that connects the bath and the drainage line, and an on-off valve that opens and closes the confluence pipe; 16. The method for cleaning a developing device according to claim 15, wherein the supplying step includes closing the on-off valve, discharging the acid into the confluence pipe downstream of the on-off valve in a drainage direction, and supplying the acid from the confluence pipe to the drainage line.

18. 18. The method for cleaning a developing device according to claim 14, wherein the acid is an acid-containing gas.

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