Mounting table and mounting table maintenance method

The detachable, divided dielectric structure of the electrostatic chuck allows for efficient maintenance by replacing only the upper member, reducing costs and downtime in substrate processing apparatuses.

JP2025141177APending Publication Date: 2025-09-29TOKYO ELECTRON LTD
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Patent Information

Application Number
JP2024040988
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-03-15
Publication Date
2025-09-29

AI Technical Summary

Technical Problem

Existing mounting tables with integrated electrostatic chucks require extensive downtime and high replacement costs due to the need to replace the entire chuck when reaction by-products adhere, complicating maintenance and increasing operational costs.

Method used

The electrostatic chuck is designed with a detachable, divided dielectric structure, allowing the upper member to be replaced independently from the lower member and base, reducing the need to remove the chuck from the processing chamber.

Benefits of technology

This design reduces replacement costs and downtime by enabling the upper member to be replaced without removing the lower member or base, thus minimizing operational disruptions and costs.

✦ Generated by Eureka AI based on patent content.

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Abstract

To provide a mounting table maintenance method and a mounting table for improving maintainability.SOLUTION: The mounting table comprises: a base part; and an electrostatic chuck that is fixed to the base part and has a dielectric body and an electrode provided inside the dielectric body. The dielectric body of the electrostatic chuck is formed to be detachably divided.SELECTED DRAWING: Figure 2
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Description

[Technical Field]

[0001] The present disclosure relates to a mounting table and a method for maintaining the mounting table. [Background technology]

[0002] Patent Document 1 describes that an electrode used in an electrostatic chuck is divided into a plurality of rod-shaped base materials, and an insulating film is formed on the surface of the rod-shaped base materials. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-4806 Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides a mounting table and a method for maintaining the mounting table that improve maintainability. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, there is provided a mounting table including a base portion and an electrostatic chuck fixed to the base portion and having a dielectric and an electrode provided within the dielectric, wherein the dielectric of the electrostatic chuck is formed in a detachable divided form, A mounting platform is provided. [Effects of the Invention]

[0006] According to one aspect of the present disclosure, it is possible to provide a mounting table and a method for maintaining the mounting table that improve maintainability. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a schematic cross-sectional view illustrating an example of a configuration of a substrate processing apparatus according to an embodiment. [Figure 2] 1 is a schematic cross-sectional view illustrating an example of a structure of a mounting table. [Figure 3] 1 is a schematic cross-sectional view illustrating an example of a structure of a mounting table. [Figure 4] 1 is a plan view of a mounting table as viewed from above; [Figure 5] 10 is an example of a flowchart illustrating a maintenance method for the mounting table. [Figure 6] 1 is a plan view of a mounting table as viewed from above; [Figure 7] 1 is a plan view of a mounting table as viewed from above; DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] <Substrate processing apparatus 1> An example of a substrate processing apparatus 1 according to an embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is an example of a cross-sectional view illustrating the configuration of the substrate processing apparatus 1 according to an embodiment. Fig. 2 is an example of a cross-sectional view illustrating the structure of a mounting table 5.

[0010] Here, the substrate processing apparatus 1 is an apparatus that performs a predetermined process (such as a film formation process) on a substrate W held on a mounting table 5 provided in a processing chamber 2. For example, the substrate processing apparatus 1 may be a substrate processing apparatus (such as a CVD (Chemical Vapor Deposition) apparatus or an ALD (Atomic Layer Deposition) apparatus) that supplies a processing gas into the processing chamber 2 to perform a predetermined process (such as a film formation process) on the substrate W. Alternatively, for example, the substrate processing apparatus 1 may be a substrate processing apparatus (such as a PVD (Physical Vapor Deposition) apparatus) that generates plasma of a sputtering gas (such as Ar gas) in the processing chamber 2 and sputters a target provided in the processing chamber 2 to perform a desired process (such as a film formation process) on the substrate W.

[0011] The substrate processing apparatus 1 includes a mounting table 5 for mounting a substrate W inside a processing chamber 2. The mounting table 5 includes a base 10, an electrostatic chuck 20, a support 31, and a shield (annular member) 32.

[0012] The base portion 10 is made of aluminum, for example. The base portion 10 has a generally cylindrical shape. The base portion 10 is provided with a through-hole 11 through which a power supply cable 26, which will be described later, is inserted. The base portion 10 is also provided with a flow path 12 through which a heat transfer medium flows. A temperature-adjusted heat transfer medium is supplied to the flow path 12 from a heat transfer medium supply unit 62, which will be described later. The heat transfer medium that flows out of the flow path 12 is returned to the heat transfer medium supply unit 62. The base portion 10 may also be provided with a heater (not shown).

[0013] The electrostatic chuck 20 is provided on the upper surface of the base 10. The upper surface of the base 10 and the lower surface of the electrostatic chuck 20 (the lower surface of a lower member 220 described later) are fixed together by adhesive or the like. The electrostatic chuck 20 holds the substrate W by electrostatic attraction. The electrostatic chuck 20 has an electrode 25 formed of, for example, a conductive film. The electrode 25 is sandwiched between dielectrics 24 (24a, 24b). A power introduction cable 26 is connected to the electrode 25 of the electrostatic chuck 20, and the electrode 25 is connected to a chuck power supply 61 via the power introduction cable 26. The electrostatic chuck 20 attracts and holds the substrate W onto the electrostatic chuck 20 by electrostatic force due to a voltage applied from the chuck power supply 61.

[0014] The dielectric 24 of the electrostatic chuck 20 is divided in the vertical direction. As a result, the electrostatic chuck 20 is divided into an upper member (chuck surface layer portion) 210 and a lower member (chuck main body portion) 220. The upper member 210 is detachably disposed on the lower member 220. The upper member 210 may be formed in a plate shape or a sheet shape. As a result, the electrostatic chuck 20 is configured so that the upper member 210 can be detached from the lower member 220.

[0015] In other words, the electrostatic chuck 20 has a dielectric 24 (24a, 24b) and an electrode 25 provided in the dielectric 24, and the dielectric 24 is divided. The dividing surface of the dielectric 24 is parallel to the substrate mounting surface. The dividing surface of the dielectric 24 is formed to include the upper surface of the electrode 25.

[0016] The upper member 210 has a dielectric (first dielectric) 24a. The dielectric 24a is preferably made of a material with a relative dielectric constant (ε) of 5 to 10. Specifically, the dielectric 24a may be made of any of Al2O3, AlN, MgO, polymeric materials (e.g., polyimide), etc. The thickness of the upper member 210 is preferably within a range of 300 μm to 1 mm. The upper surface of the upper member 210 serves as a substrate mounting surface on which the substrate W is mounted. The substrate mounting surface of the upper member 210 has recesses 210s and protrusions 210t, as shown in FIG. 2. The upper surfaces of the protrusions 210t abut against the substrate W held by the electrostatic chuck 20. A heat transfer gas (e.g., He gas) is filled into the space formed by the substrate W and the recesses 210s from a heat transfer gas supply unit 63, which will be described later.

[0017] The lower member 220 has a dielectric (second dielectric) 24b and an electrode 25. The dielectric 24b may be made of any of Al2O3, AlN, MgO, a polymer material (e.g., polyimide), etc. Furthermore, the dielectric 24a and the dielectric 24b may be made of the same material or different materials.

[0018] 2, when the upper member 210 is removed from the lower member 220, the upper surface of the electrode 25 is preferably exposed. In other words, the upper member 210 abuts against the upper surface of the lower member 220 on the surface (lower surface) opposite the substrate mounting surface. The upper surface of the electrode 25 is preferably exposed on the upper surface of the lower member 220 (the surface abutting against the upper member 210). This makes it possible to shorten the distance from the electrode 25 to the substrate W when the electrostatic chuck 20 electrostatically attracts the substrate W, compared to when the top of the electrode 25 is covered with the dielectric 24b. In other words, it is possible to ensure the thickness of the upper member 210.

[0019] The upper surface of the electrode 25 may be covered with a thin dielectric 24b when the upper member 210 is removed from the lower member 220. That is, the dividing surface of the dielectric 24 is preferably provided parallel to the substrate mounting surface and includes the upper surface of the electrode 25, or is provided closer to the substrate mounting surface than the upper surface of the electrode 25.

[0020] The dividing surface of the dielectric 24 may be provided parallel to the substrate mounting surface and may include the lower surface of the electrode 25, or may be provided on a side farther from the substrate mounting surface than the lower surface of the electrode 25. That is, the electrode may be provided on the side of the upper member 210.

[0021] The upper member 210 may be configured to be fixed onto the lower member 220 by clamping the outer edge of the upper member 210 between the annular shield 32. Alternatively, the upper member 210 may have an adhesive layer (not shown) on the lower surface (the surface opposite to the substrate mounting surface) of the upper member 210, and the upper member 210 may be attached to the upper surface of the lower member 220.

[0022] The support portion 31 supports the base portion 10 and covers the outer periphery of the base portion 10 and part of the outer periphery of the electrostatic chuck 20 .

[0023] The shield 32 is fixed to the support portion 31. The shield 32 is formed in a circular ring shape in a plan view and covers the outer edge of the electrostatic chuck 20.

[0024] The chuck power supply 61 introduces power to the electrode 25 of the electrostatic chuck 20 via the power introduction cable 26. The chuck power supply 61 may be configured to introduce DC power or AC power, and is not limited thereto.

[0025] The heat transfer medium supply unit 62 supplies the temperature-adjusted heat transfer medium to the flow path 12 of the base unit 10 .

[0026] The heat transfer gas supply unit 63 supplies a heat transfer gas (e.g., He gas) to the space between the upper surface of the electrostatic chuck 20 and the lower surface of the substrate W via the gas flow path 53, the through hole 53b formed in the lower member 220, and the through hole 53a formed in the upper member 210.

[0027] Here, the surface (substrate mounting surface) of the electrostatic chuck 20 is covered with a dielectric 24a (upper member 210) and is insulated, and a power supply cable 26 is connected to an electrode 25 inside the electrostatic chuck 20. The electrostatic chuck 20 is fixed to a base 10, and a connection pipe to a heat transfer medium supply unit 62, a connection pipe to a heat transfer gas supply unit 63, etc. are connected to the base 10.

[0028] During substrate processing, reaction by-products such as metals and organic substances may adhere to the surface (substrate mounting surface) of the electrostatic chuck 20. These reaction by-products may cause poor adhesion of the substrate W by the electrostatic chuck 20, scratches on the back surface of the substrate W, and abnormal discharge (arcing). When reaction by-products adhere, the surface of the electrostatic chuck 20 needs to be cleaned to remove the reaction by-products, and the electrostatic chuck 20 needs to be replaced.

[0029] Replacing the entire electrostatic chuck 20 increases the cost of the replaced parts. Furthermore, in order to remove the electrostatic chuck 20 from the base portion 10, the connecting pipe between the heat transfer medium supply unit 62 and the base portion 10, the connecting pipe between the heat transfer gas supply unit 63 and the base portion 10, etc. must be removed to remove the base portion 10 from the processing chamber 2, and then the electrostatic chuck 20 must be removed from the base portion 10 and the power supply cable 26 must be taken out from the through hole 11 of the base portion 10. This increases the downtime required for the replacement work.

[0030] In contrast, in the substrate processing apparatus 1 according to this embodiment, the electrostatic chuck 20 includes an upper member 210 and a lower member 220 having an electrode 25 and a power supply cable 26. As a result, when reaction by-products such as metals and organic substances adhere to the surface (substrate mounting surface) of the electrostatic chuck 20, the upper member 210 formed of the dielectric 24a can be detached from the lower member 220 and replaced. This allows the upper member 210 to be replaced without removing the lower member 220 and the base 10 from the processing chamber 2. This reduces the cost of replacement parts. Furthermore, it also reduces the downtime of the substrate processing apparatus 1 required for the replacement work.

[0031] 1 and 2, the upper member 210 is described as being formed of a single plate-like or sheet-like member, but the present invention is not limited to this. The upper member 210 may be formed of multiple members.

[0032] An example of the upper member 210A to be divided will be described with reference to Fig. 3 to Fig. 5. Fig. 3 is an example of a schematic cross-sectional view illustrating the structure of the mounting table 5. Fig. 4 is an example of a plan view of the mounting table 5 as seen from above.

[0033] The electrostatic chuck 20A has an upper member 210A (chuck surface layer portion) and a lower member 220 (chuck main body portion). The upper member 210A is divided into multiple parts in the radial direction. In the example shown in FIGS. 3 and 4, the upper member 210A has an inner plate 211, a middle plate 212, an outer plate 213, and a fixing member (second fixing screw) 214. Note that, although the upper member 210A will be described as being divided into three parts in the radial direction, the number of parts is not limited to this.

[0034] The inner plate 211 is a circular member disposed in the center of the mounting table 5. The middle plate 212 is an annular member disposed outside the inner plate 211. The outer plate 213 is an annular member disposed outside the middle plate 212. The fixing member 214 is a member that fixes the inner plate 211 to the lower member 220 (and / or the base portion 10).

[0035] The inner plate 211 has an engaging portion 211b on its outer periphery. The middle plate 212 has an engaging portion 212a on its inner periphery. The engaging portion 211b is disposed below the engaging portion 212a. As a result, the outer periphery (engaging portion 211b) of the inner plate 211 is sandwiched and supported by the inner periphery (engaging portion 212a) of the middle plate 212 and the lower member 220.

[0036] The middle plate 212 has an engaging portion 212b on its outer periphery. The outer plate 213 has an engaging portion 213a on its inner periphery. The engaging portion 212b is disposed below the engaging portion 213a. As a result, the outer periphery (engaging portion 212b) of the middle plate 212 is sandwiched and supported by the inner periphery (engaging portion 213a) of the outer plate 213 and the lower member 220.

[0037] The outer peripheral side of the outer plate 213 is sandwiched by the shield 32. That is, by fixing the shield 32 to the support part 31 with fixing members (first fixing screws) 33 that are evenly arranged in the circumferential direction, the outer peripheral side of the outer plate 213 is fixed by the shield 32. That is, the shield 32 fixes the outer plate 213, fixes the middle plate 212 via the engaging parts 212b and 213a, and fixes the inner plate 211 via the engaging parts 211b and 212a.

[0038] A carbon sheet 34 is disposed between the outer plate 213 and the support part 31, and a carbon sheet 35 is disposed between the outer plate 213 and the shield 32. This provides electrical conduction between the outer plate 213 (upper member 210A) and the support part 31 and the shield 32. Furthermore, providing the carbon sheets 34 and 35 at the contact portions prevents the members from rubbing against each other. Furthermore, even if the heat transfer gas supplied from the gas flow passage 53 flows radially outward between the upper member 210 and the lower member 220, it is sealed by the carbon sheet 35. This prevents leakage of the heat transfer gas filled between the back surface of the substrate W and the substrate mounting surface. The carbon sheets 34 and 35 may be replaced with soft metal sheets such as indium sheets.

[0039] Furthermore, the inner plate 211 is fixed to the lower member 220 (and / or the base portion 10) by the fixing member 214. This prevents the upper member 210A from floating up from the lower member 220 near the center.

[0040] The upper member 210A (inner plate 211, middle plate 212, outer plate 213, and fixing member 214) is preferably made of a material with a relative dielectric constant (ε) of 5 to 10. Specifically, the upper member 210A (inner plate 211, middle plate 212, outer plate 213, and fixing member 214) may be made of any of Al2O3, AlN, MgO, polymer-based materials (e.g., polyimide), etc. The thicknesses of the inner plate 211, middle plate 212, and outer plate 213 of the upper member 210A are preferably within a range of 300 μm to 1 mm. Furthermore, the fixing member 214 is preferably made of the same material as the fixing member 214.

[0041] This allows the upper member 210A to be replaced without removing the lower member 220 and the base part 10 from the processing chamber 2. This reduces the cost of replacement parts and the downtime of the substrate processing apparatus 1 required for the replacement work.

[0042] FIG. 5 is a flowchart illustrating an example of a maintenance method for the mounting table 5. In FIG.

[0043] In step S101, the inner plate 211 is positioned and fixed. Here, the inner plate 211 is fixed to the lower member 220 by the fixing member 214. This aligns the center position of the inner plate 211.

[0044] In step S102, the middle plate 212 is positioned relative to the inner plate 211. Here, the middle plate 212 is positioned relative to the inner plate 211 by engaging the engaging portions 211b and 212a.

[0045] In step S103, the outer plate 213 is positioned relative to the middle plate 212. Here, the outer plate 213 is positioned relative to the middle plate 212 by engaging the engaging portions 212b and 213a.

[0046] In step S104, the outer plate 213 is pressed down by the shield 32 to position and fix the shield 32. Here, the shield 32 is fixed to the support part 31 by the fixing member 33. This positions and fixes the shield 32. In addition, the outer periphery of the outer plate 213 is pressed down and fixed by the shield 32.

[0047] In this manner, the inner plate 211, the middle plate 212, the outer plate 213 and the shield 32 are fixed by the fixing members 314 and 33.

[0048] When the inner plate 211, the middle plate 212, and the outer plate 213 are fixed together, the lower member 220 and the upper member 210A are aligned in the circumferential direction so that the positions of the heat transfer gas through holes and the lift pin insertion holes coincide. For example, the circumferential position of the inner plate 211 is aligned by inserting a shaft-shaped jig into the through hole 53b and then inserting the jig into the through hole 53a of the inner plate 211. The circumferential positions of the middle plate 212 and the outer plate 213 can be aligned in the same manner.

[0049] An example of the upper member 210B to be divided will be described with reference to Fig. 6. Fig. 6 is an example of a plan view of the mounting table 5 as seen from above.

[0050] The mounting table 5 shown in FIG. 6 includes an upper member 210B and a lower member 220. The upper member 210B includes an inner plate 215 disposed at the center of the mounting table 5, multiple sector-shaped plates (divided plates) 216 disposed radially outward of the inner plate 215 and divided in the circumferential direction, and a fixing member 214. The sector-shaped plate 216 has two sides extending radially, an inner arc, and an outer arc. An engaging portion 216a on the inner side of the sector-shaped plate 216 is formed to be higher than the engaging portion of the inner plate 215. An engaging portion 216b on one side of the sector-shaped plate 216 is formed to be lower than the engaging portion of the sector-shaped plate 216 adjacent on one side. An engaging portion 216c on the other side of the sector-shaped plate 216 is formed to be higher than the engaging portion of the sector-shaped plate 216 adjacent on the other side. An engaging portion 216 d on the outer periphery of the sector-shaped plate 216 is formed to be lower than the shield 32 .

[0051] This allows the upper member 210B to be replaced without removing the lower member 220 and the base 10 from the processing chamber 2. This reduces the cost of replacement parts and the downtime of the substrate processing apparatus 1 required for the replacement work.

[0052] Furthermore, by dividing the outer periphery of the upper member 210B in the circumferential direction, the maximum dimension of each plate can be reduced. This improves the workability of maintenance. Furthermore, if the adhesion of reaction by-products is unevenly distributed in the circumferential direction, the sector-shaped plate 216 with the most adhesion can be replaced linearly.

[0053] An example of the upper member 210C to be divided will be described with reference to Fig. 7. Fig. 7 is an example of a plan view of the mounting table 5 as seen from above.

[0054] The mounting table 5 shown in FIG. 7 includes an upper member 210C and a lower member 220. The upper member 210C includes a substantially cross-shaped inner plate 217, multiple sector-shaped plates (divided plates) 218, and a fixing member 214. Specifically, the inner plate 217 has multiple beams extending radially outward from the center of the mounting table 5. The sector-shaped plate 218 is disposed between the beams of the inner plate 217. The sector-shaped plate 218 has two sides extending radially and an arc on the outer periphery. Engagement portions 218a, 218b on one and the other sides of the sector-shaped plate 216 are formed to be above the engagement portion of the inner plate 217. Engagement portion 218c on the outer periphery of the sector-shaped plate 218 is formed to be below the shield 32.

[0055] This allows the upper member 210C to be replaced without removing the lower member 220 and the base part 10 from the processing chamber 2. This reduces the cost of replacement parts and also reduces the downtime of the substrate processing apparatus 1 required for the replacement work.

[0056] The substrate processing apparatus 1 has been described above, but the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure as described in the claims. [Explanation of symbols]

[0057] W substrate 1. Substrate processing equipment 2. Processing vessel 5. Mounting table 10 Base 11 Through hole 12 Flow path 20 Electrostatic Chuck 24 Dielectrics 24a Dielectric (first dielectric) 24b Dielectric (second dielectric) 25 electrodes 26 Power lead-in cable 31 Support part 32 Shield (annular member) 33 Fixing member 210 Upper part (chuck surface) 220 Lower part (chuck body)

Claims

1. A base portion and a mounting table including an electrostatic chuck fixed to the base portion and having a dielectric and an electrode provided within the dielectric, the dielectric of the electrostatic chuck is formed in a detachable divided form; Mounting stand.

2. the dielectric body has a first dielectric body and a second dielectric body separated by a separation surface; The divided electrostatic chuck includes: a chuck surface portion having the first dielectric body on which a substrate mounting surface is formed; a chuck body having the second dielectric and the electrode; The stage according to claim 1 .

3. a dividing surface of the electrostatic chuck is provided parallel to the substrate mounting surface; The stage according to claim 2 .

4. the chuck surface portion abuts against the chuck body portion on a surface opposite to the substrate mounting surface, the electrode of the chuck body is exposed on a surface that abuts against the chuck surface layer; The stage according to claim 3 .

5. The chuck surface layer is divided into a plurality of parts. The stage according to claim 2 .

6. The chuck surface portion is divided into a plurality of divided plates in the radial direction. The stage according to claim 5 .

7. an outer circumferential portion of an inner divided plate among the plurality of adjacent divided plates is sandwiched between an inner circumferential portion of an outer divided plate and the chuck body; The stage according to claim 6 .

8. an annular member that holds down an outer periphery of an outermost divided plate among the plurality of divided plates; The stage according to claim 7 .

9. The annular member is fixed by first fixing screws that are evenly spaced in the circumferential direction. The stage according to claim 8 .

10. a central divided plate of the mounting table among the plurality of divided plates is fixed by a second fixing screw; The stage according to claim 9 .

11. the second fixing screw is made of the same material as the dielectric material of the electrostatic chuck. The stage according to claim 10.

12. The chuck surface portion is an inner plate disposed at the center of the mounting table; a plurality of divided plates provided radially outside the inner plate and divided in the circumferential direction, The stage according to claim 5 .

13. The chuck surface portion is an inner plate having a plurality of beam portions extending radially outward from a central portion of the mounting table; a plurality of divided plates provided between the beam portions of the inner plate; The stage according to claim 5 .

14. 1. A maintenance method for a mounting table including: a base; and an electrostatic chuck fixed to the base, the electrostatic chuck having a dielectric and an electrode provided within the dielectric, the method comprising: the dielectric body has a first dielectric body and a second dielectric body separated by a separation surface; the divided electrostatic chuck includes a chuck surface portion having the first dielectric on which a substrate mounting surface is formed, and a chuck main body portion having the second dielectric and the electrode, The chuck surface portion is divided into a plurality of divided plates in a radial direction, a step of fixing a central divided plate of the plurality of divided plates on the mounting table with a fixing screw; and attaching the divided plates in order from the radially inner side. Maintenance method for the mounting table.

15. The step of attaching the division plates includes: The outer peripheral portion of the inner divided plate is sandwiched between the inner peripheral portion of the outer divided plate and the chuck body portion. The maintenance method for the mounting table according to claim 14.

Citation Information

Patent Citations

  • Substrate stage electrostatic chuck, electrode used therefor, and processing system having them

    JP2009004806A