Substrate processing method and substrate processing apparatus

Abstract

To provide a substrate processing method and substrate processing apparatus, capable of preventing particles and / or mists from adhering to a substrate.SOLUTION: A substrate processing method comprises the steps: (step S12) of starting rotation of a substrate W; (step S14) of processing the substrate W by supplying a liquid medicine to the substrate W while exhausting gas in a cup 90 surrounding the substrate W; (step S15) of replacing the liquid medicine on the substrate W with a rinse liquid; (step S17) of replacing the rinse liquid on the substrate W with a drying liquid; and (step S19) of drying the substrate W by rotating the substrate W while forming air currents P1-P3 flowing along an upper surface Wa of the substrate W. An exhaust pressure exhausting a gas in the cup 90 in the drying step (step S19) is lower than that in the processing step (step S14).SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] Conventionally, there has been known a substrate processing apparatus that processes a substrate by discharging a processing liquid onto the rotating substrate (see, for example, Patent Document 1). Patent Document 1 describes a substrate processing apparatus that includes a holder that holds and rotates the substrate, a nozzle that supplies the processing liquid to the substrate, a cup that is disposed around the holder and catches the processing liquid that splashes from the substrate, a processing housing that houses these components, and an exhaust pipe that exhausts gas inside the processing housing to the outside.

[0003] In such substrate processing apparatuses, particles and / or mist are generated when processing liquid is supplied to the substrate. Because the particles and / or mist have a negative effect on processing, the air in the cup is exhausted to the outside through an exhaust pipe. As a result, the particles and / or mist generated on the substrate are drawn into the cup and then exhausted to the outside through the exhaust pipe. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2021-136435 Summary of the Invention [Problem to be solved by the invention]

[0005] However, even when the air inside the cup is discharged to the outside using an exhaust pipe, particles may adhere to the substrate during the drying process, or the mist adhering to the substrate may dry and turn into particles.

[0006] The present invention has been made in consideration of the above-mentioned problems, and its purpose is to provide a substrate processing method and a substrate processing apparatus that can suppress adhesion of particles and / or mist to a substrate. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing method includes the steps of: starting rotation of a substrate; supplying a chemical liquid to the substrate to process the substrate while evacuating gas from a processing cup surrounding the substrate; supplying a rinse liquid to the substrate to replace the chemical liquid on the substrate with the rinse liquid; supplying a drying liquid to the substrate to replace the rinse liquid on the substrate with the drying liquid; and discharging gas from a gas discharge nozzle disposed above the substrate to form an airflow that flows along an upper surface of the substrate, thereby rotating the substrate to remove the drying liquid on the substrate, thereby drying the substrate, wherein an exhaust pressure for evacuating gas from the processing cup in the drying step is lower than the exhaust pressure in the processing step.

[0008] In one embodiment, the substrate processing method may include the step of reducing the exhaust pressure prior to the drying step.

[0009] In one embodiment, the exhaust pressure in the drying step may be lower than the exhaust pressure in the replacing with the rinse liquid step.

[0010] In one embodiment, the exhaust pressure in the step of replacing with the drying liquid may be lower than the exhaust pressure in the step of treating.

[0011] In one embodiment, the exhaust pressure in the step of replacing with the drying liquid may be higher than the exhaust pressure in the step of drying.

[0012] In one embodiment, in the step of replacing the liquid with the rinse liquid, the rotation speed of the substrate may be reduced.

[0013] In one embodiment, in the step of replacing the liquid with the drying liquid, the rotation speed of the substrate may be increased.

[0014] In one embodiment, the substrate processing method may include, prior to the processing step, a step of starting supply of the gas into the chamber from an upper portion of the chamber containing the substrate by an air blowing unit having a fan for supplying the gas. The air blowing unit may have an air blowing rate changer that changes the air blowing rate. In the processing step, the air blowing unit may supply the gas into the chamber at a first air blowing rate, and in the drying step, the air blowing unit may supply the gas into the chamber at a second air blowing rate that is less than the first air blowing rate.

[0015] In one embodiment, in the processing step, the airflow rate change unit may drive the fan at a first output, and in the drying step, the airflow rate change unit may drive the fan at a second output lower than the first output.

[0016] In one embodiment, the gas discharge nozzle may have a first discharge port that discharges the gas toward the center of the upper surface of the substrate, and a second discharge port that discharges the gas radially from the center toward the periphery of the upper surface of the substrate.

[0017] According to another aspect of the present invention, a substrate processing apparatus includes a substrate holding unit, a processing cup, an exhaust unit, a chemical liquid nozzle, a rinse liquid nozzle, a drying liquid nozzle, and a gas discharge nozzle. The substrate holding unit holds a substrate and rotates the substrate. The processing cup surrounds the substrate and the substrate holding unit. The exhaust unit discharges gas from the processing cup. The chemical liquid nozzle supplies the chemical liquid to the substrate. The rinse liquid nozzle supplies the rinse liquid to the substrate. The drying liquid nozzle supplies the drying liquid to the substrate. The gas discharge nozzle is disposed above the substrate and discharges gas to form an airflow that flows along the upper surface of the substrate. The substrate holding unit rotates the substrate while the airflow is flowing along the upper surface of the substrate to remove the drying liquid from the substrate, thereby drying the substrate. The exhaust unit has an exhaust pressure adjustment unit that adjusts the exhaust pressure at which the gas in the processing cup is discharged. The exhaust pressure adjusting unit makes the exhaust pressure when the gas discharge nozzle forms the airflow lower than the exhaust pressure when the chemical liquid nozzle discharges the chemical liquid onto the upper surface of the substrate. [Effects of the Invention]

[0018] According to the present invention, it is possible to provide a substrate processing method and a substrate processing apparatus that can suppress adhesion of particles and / or mist to a substrate. [Brief explanation of the drawings]

[0019] [Figure 1] 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a schematic view of a substrate processing unit in the substrate processing apparatus of the first embodiment. [Figure 3] FIG. 4 is a side view schematically showing the structure of a nozzle of a gas supply unit. [Figure 4] FIG. 4 is a cross-sectional view schematically showing an airflow formed by a nozzle of a gas supply unit. [Figure 5] FIG. 1 is a block diagram of a substrate processing apparatus according to a first embodiment. [Figure 6]4 is a flowchart showing a substrate processing method using the substrate processing apparatus of the first embodiment. [Figure 7] 10 is a cross-sectional view schematically showing the state around the substrate at step S14 of the substrate processing method by the substrate processing apparatus of the first embodiment. FIG. [Figure 8] 10 is a cross-sectional view schematically showing the state around the substrate at step S17 of the substrate processing method by the substrate processing apparatus of the first embodiment. FIG. [Figure 9] 10 is a cross-sectional view schematically showing the state around the substrate at step S19 of the substrate processing method by the substrate processing apparatus of the first embodiment. FIG. [Figure 10] FIG. 10 is a block diagram of a substrate processing apparatus according to a second embodiment. [Figure 11] 10 is a flowchart showing a substrate processing method using the substrate processing apparatus of the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0020] Hereinafter, embodiments of a substrate processing method and substrate processing apparatus according to the present invention will be described with reference to the drawings. However, the present invention is not limited to the following embodiments and can be implemented in various forms without departing from the spirit of the present invention. Note that duplicated explanations may be omitted where appropriate. In addition, identical or corresponding parts in the drawings are designated by the same reference symbols and will not be described again. In this specification, to facilitate understanding of the invention, mutually orthogonal X-, Y-, and Z-axes may be described. In this embodiment, the X- and Y-axes are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0021] (First embodiment) A substrate processing apparatus 100 according to a first embodiment of the present invention will be described with reference to Figures 1 to 9. Figure 1 is a schematic plan view of the substrate processing apparatus 100 according to the first embodiment of the present invention.

[0022] 1, the substrate processing apparatus 100 is a single-wafer type apparatus that processes a single substrate W. Typically, the substrate W has a substantially circular disk shape.

[0023] The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. In this embodiment, the substrate W is a semiconductor wafer.

[0024] The substrate processing apparatus 100 includes a plurality of substrate processing units 10, a processing liquid cabinet 110, a processing liquid box 120, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a controller 101. The controller 101 controls the indexer robot IR and the center robot CR. The controller 101 includes a control unit 102 and a memory unit 104.

[0025] Each load port LP accommodates a plurality of stacked substrates W. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the substrate processing units 10. Each substrate processing unit 10 processes the substrate W by discharging a processing liquid onto the substrate W. The processing liquid includes, for example, a chemical liquid, a rinse liquid, a removal liquid, and / or a water repellent agent. The processing liquid cabinet 110 contains the processing liquid. The processing liquid cabinet 110 may also contain a gas.

[0026] Specifically, the substrate processing units 10 form a plurality of towers TW (four towers TW in FIG. 1) arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing units 10 stacked vertically (three substrate processing units 10 in FIG. 1). The processing liquid boxes 120 correspond to the plurality of towers TW, respectively. The liquid in the processing liquid cabinet 110 is supplied to all of the substrate processing units 10 included in the tower TW corresponding to the processing liquid box 120 via one of the processing liquid boxes 120. Furthermore, the gas in the processing liquid cabinet 110 is supplied to all of the substrate processing units 10 included in the tower TW corresponding to the processing liquid box 120 via one of the processing liquid boxes 120.

[0027] Typically, the processing liquid cabinet 110 has a preparation tank (tank) for preparing the processing liquid. The processing liquid cabinet 110 may have a preparation tank for one type of processing liquid or may have preparation tanks for multiple types of processing liquid. The processing liquid cabinet 110 also has a pump, nozzle, and / or filter for circulating the processing liquid.

[0028] The control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 causes the substrate processing unit 10 to process the substrate W.

[0029] The control device 101 includes a control unit 102 and a storage unit 104. The control unit 102 has a processor. The control unit 102 has, for example, a central processing unit (CPU). Alternatively, the control unit 102 may have a general-purpose computer.

[0030] The storage unit 104 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W.

[0031] The storage unit 104 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. The storage unit 104 may include removable media. The control unit 102 executes computer programs stored in the storage unit 104 to perform substrate processing operations.

[0032] Next, the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment.

[0033] As shown in FIG. 2, the substrate processing unit 10 includes a chamber 11, a blower unit 12, a substrate holder 20, a chemical liquid supplier 30, a rinsing liquid supplier 40, a drying liquid supplier 50, and a gas supplier 60.

[0034] The chamber 11 is generally box-shaped and has an internal space. The chamber 11 accommodates a substrate W. The substrate W is accommodated in the chamber 11 and processed within the chamber 11. The chamber 11 accommodates at least a portion of each of a substrate holder 20, a chemical liquid supply unit 30, a rinsing liquid supply unit 40, a drying liquid supply unit 50, and a gas supply unit 60.

[0035] The blower unit 12 is disposed above or above the chamber 11. For example, the blower unit 12 is disposed on the ceiling of the chamber 11. The blower unit 12 sends gas from the upper part of the chamber 11 to the inside of the chamber 11. The blower unit 12 includes, for example, a fan filter unit (FFU). A downflow (descending flow) is formed within the chamber 11 by the blower unit 12 and an exhaust device 80, which will be described later.

[0036] The gas supplied by the blower unit 12 to the inside of the chamber 11 is not particularly limited, but may include, for example, clean air and an inert gas. The inert gas may include, for example, nitrogen gas. In this embodiment, the blower unit 12 supplies clean air to the inside of the chamber 11.

[0037] The blower unit 12 has an intake fan 12a (see FIG. 5) and a filter (not shown). The intake fan 12a sends clean air that has been purified by the filter into the chamber 11. The intake fan 12a has, for example, blades and a motor that rotates the blades. The intake fan 12a is an example of the "fan" of the present invention.

[0038] The substrate holding unit 20 holds the substrate W. The substrate holding unit 20 holds the substrate W horizontally so that the upper surface (front surface) Wa of the substrate W faces upward and the lower surface (back surface) Wb of the substrate W faces vertically downward. The substrate holding unit 20 also rotates the substrate W while holding it. The substrate holding unit 20 rotates the substrate W while holding it.

[0039] For example, the substrate holding unit 20 may be a clamping type that clamps the edge of the substrate W. Alternatively, the substrate holding unit 20 may have any mechanism that holds the substrate W from its lower surface Wb. For example, the substrate holding unit 20 may be a vacuum type. In this case, the substrate holding unit 20 holds the substrate W horizontally by adsorbing the central portion of the lower surface Wb of the substrate W, which is the surface on which devices are not formed, to its upper surface. Alternatively, the substrate holding unit 20 may be a combination of a clamping type that brings multiple chuck pins into contact with the peripheral edge surface of the substrate W, and a vacuum type.

[0040] For example, the substrate holding unit 20 includes a spin base 21, a chuck member 22, a shaft 23, a spin motor 24, and a housing 25. The chuck member 22 is provided on the spin base 21. The chuck member 22 chucks the substrate W. Typically, the spin base 21 is provided with a plurality of chuck members 22.

[0041] The shaft 23 extends vertically along the rotation axis AX. The spin base 21 is coupled to the upper end of the shaft 23. The substrate W is placed above the spin base 21.

[0042] The spin base 21 is disk-shaped. The chuck member 22 supports the substrate W horizontally. The shaft 23 extends downward from the center of the spin base 21. The spin motor 24 applies a rotational force to the shaft 23. The spin motor 24 rotates the shaft 23 in a rotational direction, thereby rotating the substrate W and the spin base 21 around the rotation axis AX. The housing 25 accommodates the shaft 23 and the spin motor 24.

[0043] The chemical solution supply unit 30 supplies a chemical solution to the substrate W. Typically, the chemical solution supply unit 30 supplies a chemical solution to the upper surface Wa of the substrate W. The chemical solution is not particularly limited, and may include, for example, dilute hydrofluoric acid (DHF), hydrofluoric acid (HF), hydronitric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H3PO4), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, ammonia water, hydrogen peroxide water, organic acid (e.g., citric acid, oxalic acid), organic alkali (e.g., TMAH: tetramethylammonium hydroxide), sulfuric acid / hydrogen peroxide water mixture (SPM), ammonia / hydrogen peroxide water mixture (SC1), hydrochloric acid / hydrogen peroxide water mixture (SC2), isopropyl alcohol (IPA), surfactant, corrosion inhibitor, or hydrophobizing agent. In this embodiment, the chemical solution is dilute hydrofluoric acid (DHF).

[0044] The chemical liquid supply unit 30 includes a pipe 32, a valve 34, and a nozzle 36. The nozzle 36 is an example of a "chemical liquid nozzle" in the present invention. The nozzle 36 ejects the chemical liquid onto the upper surface Wa of the substrate W. The nozzle 36 is connected to the pipe 32. The chemical liquid is supplied to the pipe 32 from a supply source. The valve 34 opens and closes a flow path in the pipe 32. The valve 34 adjusts the opening of the pipe 32 to regulate the flow rate of the chemical liquid supplied to the pipe 32. Specifically, the valve 34 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0045] The nozzle 36 may be configured to be movable relative to the substrate W. The chemical liquid supply unit 30 may further include a nozzle moving unit 38. The nozzle moving unit 38 may raise and lower the nozzle 36, or may rotate the nozzle 36 horizontally around a rotation axis. The nozzle moving unit 38 raises and lowers the nozzle 36. For example, the nozzle moving unit 38 includes a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism. The nozzle moving unit 38 also rotates the nozzle 36 horizontally. For example, the nozzle moving unit 38 includes an electric motor.

[0046] The rinse liquid supply unit 40 supplies a rinse liquid to the substrate W. Typically, the rinse liquid supply unit 40 supplies the rinse liquid to the upper surface Wa of the substrate W. The rinse liquid is, for example, deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm), or reduced water (hydrogen water). In this embodiment, the rinse liquid is deionized water (DIW).

[0047] The rinse liquid supply unit 40 includes a pipe 42, a valve 44, and a nozzle 46. The nozzle 46 is an example of a "rinse liquid nozzle" in the present invention. The nozzle 46 ejects the rinse liquid onto the upper surface Wa of the substrate W. The nozzle 46 is connected to the pipe 42. The rinse liquid is supplied to the pipe 42 from a supply source.

[0048] The valve 44 opens and closes the flow path in the pipe 42. The valve 44 adjusts the opening of the pipe 42 to regulate the flow rate of the rinse liquid supplied to the pipe 42. Specifically, the valve 44 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0049] The nozzle 46 may be configured to be movable relative to the substrate W. The rinsing liquid supply unit 40 may further include a nozzle moving unit 48. The nozzle moving unit 48 may raise and lower the nozzle 46, or may rotate the nozzle 46 horizontally around a rotation axis. The nozzle moving unit 48 raises and lowers the nozzle 46. For example, the nozzle moving unit 48 includes a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism. The nozzle moving unit 48 also rotates the nozzle 46 horizontally. For example, the nozzle moving unit 48 includes an electric motor.

[0050] The drying liquid supply unit 50 supplies a drying liquid to the substrate W. Typically, the drying liquid supply unit 50 supplies the drying liquid to the upper surface Wa of the substrate W. The drying liquid is an organic solvent having a lower surface tension than pure water, such as IPA (isopropyl alcohol), methanol, or acetone. In this embodiment, the drying liquid is IPA.

[0051] The drying liquid supply unit 50 includes a pipe 52, a valve 54, and a nozzle 56. The nozzle 56 is an example of a "drying liquid nozzle" in the present invention. The nozzle 56 ejects the drying liquid onto the upper surface Wa of the substrate W. In the present embodiment, the nozzle 56 is attached to a nozzle 66 (described later) of the gas supply unit 60. The nozzle 56 is connected to the pipe 52. The drying liquid is supplied to the pipe 52 from a supply source.

[0052] The valve 54 opens and closes the flow path in the pipe 52. The valve 54 adjusts the opening of the pipe 52 to regulate the flow rate of the drying liquid supplied to the pipe 52. Specifically, the valve 54 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0053] The nozzle 56 may be configured to be movable relative to the substrate W. In this embodiment, the nozzle 56 is moved integrally with the nozzle 66 of the gas supply unit 60 by a nozzle moving unit 68, which will be described later.

[0054] The gas supply unit 60 supplies a gas to the substrate W. Typically, the gas supply unit 60 supplies the gas to the upper surface Wa of the substrate W. The gas supplied by the gas supply unit 60 is not particularly limited, but is preferably an inert gas such as nitrogen gas (N2 gas), helium gas (He), or argon gas (Ar gas). In this embodiment, the gas supplied by the gas supply unit 60 is nitrogen gas.

[0055] The gas supply unit 60 includes a pipe 62, a valve 64, and a nozzle 66. The nozzle 66 is an example of a "gas discharge nozzle" in the present invention. The nozzle 66 discharges an inert gas (here, nitrogen gas) onto the upper surface Wa of the substrate W. The nozzle 66 is connected to the pipe 62. The inert gas is supplied to the pipe 62 from a supply source. The structure of the nozzle 66 will be described later.

[0056] The valve 64 opens and closes the flow path in the pipe 62. The valve 64 adjusts the opening of the pipe 62 to regulate the flow rate of the inert gas supplied to the pipe 62. Specifically, the valve 64 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0057] The nozzle 66 may be configured to be movable relative to the substrate W. The gas supply unit 60 may further include a nozzle moving unit 68. The nozzle moving unit 68 may raise and lower the nozzle 66, or may rotate the nozzle 66 horizontally around a rotation axis. The nozzle moving unit 68 raises and lowers the nozzle 66. For example, the nozzle moving unit 68 includes a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism. The nozzle moving unit 68 also rotates the nozzle 66 horizontally. For example, the nozzle moving unit 68 includes an electric motor.

[0058] The substrate processing apparatus 100 includes an exhaust device 80. The exhaust device 80 includes an exhaust pipe 81, an exhaust fan 82 (see FIG. 5 ), and a damper 83. The damper 83 is an example of an “exhaust pressure adjuster” of the present invention. The exhaust pipe 81 is disposed to penetrate the sidewall of the chamber 11. The exhaust pipe 81 connects the inside and outside of the chamber 11. The exhaust fan 82 is disposed inside the exhaust pipe 81. The exhaust fan 82 exhausts air from the chamber 11 to the outside of the chamber 11 via the exhaust pipe 81. The exhaust fan 82 also exhausts air from a cup 90 (described later) to the outside of the chamber 11 via the exhaust pipe 81. The damper 83 can change the exhaust pressure at which gas from a cup 90 (described later) is exhausted by changing the opening degree of the flow path of the exhaust pipe 81. In this embodiment, the exhaust pressure is the differential pressure between the air pressure in the cup 90 (or the chamber 11) and the air pressure in the exhaust pipe 81.

[0059] The damper 83 has, for example, a rotating shaft extending in the radial direction of the exhaust pipe 81, a shielding plate attached to the rotating shaft, and a motor that rotates the rotating shaft. By changing the angle of the damper 83, the opening degree of the flow path of the exhaust pipe 81 is changed.

[0060] The substrate processing apparatus 100 includes a pressure sensor 111, a pressure sensor 112, and a pressure sensor 113. The pressure sensor 111 is disposed in the exhaust pipe 81 and detects the air pressure inside the exhaust pipe 81. The pressure sensor 111 is disposed, for example, inside the exhaust pipe 81, upstream of the damper 83 in the exhaust direction. The pressure sensor 112 is disposed in the chamber 11 and detects the air pressure inside the chamber 11. The pressure sensor 112 is disposed, for example, inside the chamber 11, outside a position directly below the blower unit 12. The pressure sensor 113 is disposed outside the chamber 11 and detects the air pressure outside the chamber 11.

[0061] Pressure sensor 111, pressure sensor 112, and pressure sensor 113 transmit their detection results to control unit 102. Control unit 102 calculates the differential pressure between the air pressure inside exhaust pipe 81 and the air pressure outside chamber 11 based on the detection results of pressure sensor 111 and pressure sensor 113. Control unit 102 also calculates the differential pressure between the air pressure inside chamber 11 and the air pressure outside chamber 11 based on the detection results of pressure sensor 112 and pressure sensor 113. Note that pressure sensor 113 may not be provided, and a differential pressure sensor may be provided as pressure sensor 111 and a differential pressure sensor may be provided as pressure sensor 112. The types of pressure sensors 111, 112, and 113 are not particularly limited, and may be, for example, an absolute pressure sensor, a differential pressure sensor, or a gauge sensor.

[0062] The substrate processing unit 10 further includes a cup 90. The cup 90 is an example of the "processing cup" of the present invention. The cup 90 collects processing liquid splashed from the substrate W. The cup 90 moves up and down. For example, the cup 90 moves vertically upward to the side of the substrate W while the chemical liquid supply unit 30, the rinsing liquid supply unit 40, and / or the drying liquid supply unit 50 supply the chemical liquid, the rinsing liquid, and / or the drying liquid to the substrate W. In this case, the cup 90 collects the chemical liquid, the rinsing liquid, and / or the drying liquid splashed from the substrate W due to the rotation of the substrate W. In this embodiment, the cup 90 is also positioned to the side of the substrate W while the gas supply unit 60 supplies an inert gas to the substrate W. In addition, when the period in which the chemical liquid supply unit 30, the rinsing liquid supply unit 40, the drying liquid supply unit 50 and / or the gas supply unit 60 supply the chemical liquid, the rinsing liquid, the drying liquid and / or the inert gas to the substrate W ends, the cup 90 descends vertically downward from the side of the substrate W.

[0063] Next, the nozzle 66 will be further described with reference to FIGS. 3 and 4. FIG. 3 is a side view schematically illustrating the structure of the nozzle 66 of the gas supply unit 60. As shown in FIG. 3, the nozzle 66 has, for example, a substantially cylindrical shape. The nozzle 66 has a substantially circular bottom surface 661 and an outer peripheral surface 662 extending upward from the periphery of the bottom surface 661. The nozzle 66 also has a central outlet 66a, a first outer peripheral outlet 66b, and a second outer peripheral outlet 66c. The central outlet 66a is an example of the "first outlet" in the present invention. The first outer peripheral outlet 66b and the second outer peripheral outlet 66c are examples of the "second outlet" in the present invention.

[0064] The central discharge port 66a is formed in the center of the bottom surface 661. The central discharge port 66a discharges the inert gas downward toward the center of the upper surface Wa of the substrate W. The nozzle 56 of the drying liquid supply unit 50 is fixed to the nozzle 66. The tip of the nozzle 56 is positioned within the central discharge port 66a. The nozzle 56 discharges the drying liquid downward toward the center of the upper surface Wa of the substrate W.

[0065] The first outer peripheral discharge ports 66b discharge the inert gas radially from the center toward the periphery of the upper surface Wa of the substrate W. The first outer peripheral discharge ports 66b are formed on the outer periphery of the nozzle 66. In this embodiment, the first outer peripheral discharge ports 66b are formed on the outer periphery surface 662 of the nozzle 66. The first outer peripheral discharge ports 66b may be formed on the outer periphery of the bottom surface 661. The first outer peripheral discharge ports 66b are formed around the outer periphery surface 662 in the circumferential direction. A plurality of the first outer peripheral discharge ports 66b may be formed on the outer periphery surface 662 at predetermined angular intervals. The first outer peripheral discharge ports 66b are formed near the lower end of the outer periphery surface 662 of the nozzle 66. The first outer peripheral discharge ports 66b discharge the inert gas horizontally or obliquely downward. In this embodiment, the first outer peripheral discharge ports 66b discharge the inert gas horizontally.

[0066] The second outer peripheral discharge ports 66c discharge the inert gas radially from the center toward the periphery of the upper surface Wa of the substrate W. The second outer peripheral discharge ports 66c are formed on the outer periphery of the nozzle 66. In this embodiment, the second outer peripheral discharge ports 66c are formed on the outer periphery surface 662 of the nozzle 66. The second outer peripheral discharge ports 66c may also be formed on the outer periphery of the bottom surface 661. The second outer peripheral discharge ports 66c are formed around the outer periphery surface 662 in the circumferential direction. A plurality of second outer peripheral discharge ports 66c may be formed on the outer periphery surface 662 at predetermined angular intervals. The second outer peripheral discharge ports 66c are formed on the outer periphery surface 662 of the nozzle 66 at a position spaced upward from the first outer peripheral discharge ports 66b. The second outer peripheral discharge ports 66c discharge the inert gas horizontally or obliquely downward. In this embodiment, the second outer peripheral discharge ports 66c discharge the inert gas horizontally.

[0067] Fig. 4 is a cross-sectional view schematically showing an airflow formed by the nozzle 66 of the gas supply unit 60. As shown in Fig. 4, the inert gas discharged from the central discharge port 66a (see Fig. 3) of the nozzle 66 hits the center of the upper surface Wa of the substrate W, and then forms an airflow P1 that flows radially toward the peripheral edge of the upper surface Wa. The airflow P1 flows in layers while contacting the upper surface Wa of the substrate W.

[0068] The inert gas discharged from the first outer peripheral discharge port 66b of the nozzle 66 forms an airflow P2 that flows radially toward the peripheral edge of the upper surface Wa. The airflow P2 flows in a layered manner while being in contact with the airflow P1 due to the downflow formed by the blower unit 12.

[0069] The inert gas discharged from the second outer peripheral discharge port 66c of the nozzle 66 forms an airflow P3 that flows radially toward the periphery of the upper surface Wa. The airflow P3 flows in a layered manner while being in contact with the airflow P2 due to the downflow formed by the blower unit 12.

[0070] In this way, the gas supply unit 60 forms multiple layers of airflows P1 to P3 (laminar flows) that cover the upper surface Wa of the substrate W. This makes it possible to prevent particles and / or mist (hereinafter sometimes referred to as particles, etc.) Pa floating in the chamber 11 from adhering to the upper surface Wa of the substrate W. Specifically, the particles, etc. Pa falling toward the substrate W are swept toward the peripheral edge of the substrate W by the airflow P3 and sucked into the cup 90.

[0071] Next, the substrate processing apparatus 100 of the first embodiment will be described with reference to Fig. 5. Fig. 5 is a block diagram of the substrate processing apparatus 100 of the first embodiment.

[0072] 5 , the control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 controls the indexer robot IR, the center robot CR, the blower unit 12, the substrate holder 20, the chemical liquid supply unit 30, the rinsing liquid supply unit 40, the drying liquid supply unit 50, the gas supply unit 60, the exhaust device 80, and the cup 90. Specifically, the control device 101 controls the indexer robot IR, the center robot CR, the blower unit 12, the substrate holder 20, the chemical liquid supply unit 30, the rinsing liquid supply unit 40, the drying liquid supply unit 50, the gas supply unit 60, the exhaust device 80, and the cup 90 by sending control signals to the indexer robot IR, the center robot CR, the blower unit 12, the substrate holder 20, the chemical liquid supply unit 30, the rinsing liquid supply unit 40, the drying liquid supply unit 50, the gas supply unit 60, the exhaust device 80, and the cup 90.

[0073] The control unit 102 controls the indexer robot IR to transfer the substrate W by the indexer robot IR.

[0074] The control unit 102 controls the center robot CR to transfer the substrate W by the center robot CR. For example, the center robot CR receives an unprocessed substrate W and carries the substrate W into one of the plurality of chambers 11. The center robot CR also receives a processed substrate W from the chamber 11 and carries the substrate W out.

[0075] The control unit 102 controls the blower unit 12 to send air into the chamber 11. For example, the control unit 102 controls the blower unit 12 and the exhaust device 80 to form a downflow in the chamber 11.

[0076] The control unit 102 controls the substrate holding unit 20 to control the attachment and detachment of the substrate W, the start of rotation of the substrate W, changing of the rotation speed, and stopping of the rotation of the substrate W. In this embodiment, the rotation speed means the number of rotations per minute [rpm]. For example, the control unit 102 can control the substrate holding unit 20 to change the rotation speed of the substrate holding unit 20. Specifically, the control unit 102 can change the rotation speed of the substrate W by changing the rotation speed of the spin motor 24 of the substrate holding unit 20.

[0077] The control unit 102 controls the valve 34 of the chemical solution supply unit 30 to switch the state of the valve 34 between an open state and a closed state. Specifically, the control unit 102 controls the valve 34 to open the valve 34, thereby allowing the chemical solution flowing through the pipe 32 toward the nozzle 36 to pass. The control unit 102 also controls the valve 34 to close the valve 34, thereby stopping the supply of the chemical solution flowing through the pipe 32 toward the nozzle 36.

[0078] The control unit 102 controls the valve 44 of the rinse liquid supply unit 40 to switch the state of the valve 44 between an open state and a closed state. Specifically, the control unit 102 controls the valve 44 to open the valve 44, thereby allowing the rinse liquid flowing through the pipe 42 toward the nozzle 46 to pass. The control unit 102 also controls the valve 44 to close the valve 44, thereby stopping the supply of the rinse liquid flowing through the pipe 42 toward the nozzle 46.

[0079] The control unit 102 controls the valve 54 of the drying liquid supply unit 50 to switch the state of the valve 54 between an open state and a closed state. Specifically, the control unit 102 controls the valve 54 to open the valve 54, thereby allowing the drying liquid flowing through the pipe 52 toward the nozzle 56 to pass. The control unit 102 also controls the valve 54 to close the valve 54, thereby stopping the supply of the drying liquid flowing through the pipe 52 toward the nozzle 56.

[0080] The control unit 102 controls the valve 64 of the gas supply unit 60 to switch the state of the valve 64 between an open state and a closed state. Specifically, the control unit 102 controls the valve 64 to open the valve 64, thereby allowing the inert gas flowing through the pipe 62 toward the nozzle 66 to pass. The control unit 102 also controls the valve 64 to close the valve 64, thereby stopping the supply of the inert gas flowing through the pipe 62 toward the nozzle 66.

[0081] The control unit 102 can control the exhaust fan 82 of the exhaust device 80 to exhaust the air inside the chamber 11 to the outside of the chamber 11. Specifically, the control unit 102 can control the exhaust fan 82 to exhaust the air inside the cup 90 to the outside of the chamber 11.

[0082] Furthermore, the control unit 102 can change the exhaust pressure by controlling the damper 83 of the exhaust device 80. Specifically, the control unit 102 can change the opening of the flow path of the exhaust pipe 81 by controlling the damper 83. This makes it possible to change the exhaust pressure at which the gas inside the cup 90 is exhausted. In this embodiment, the control unit 102 controls the damper 83 to change the opening of the flow path of the exhaust pipe 81 based on the detection results of the pressure sensors 111 to 113. Note that the control unit 102 may change the exhaust pressure based on a recipe or may change the exhaust pressure based on apparatus parameters.

[0083] The control unit 102 may control the cup 90 to move the cup 90 relative to the substrate W. Specifically, the control unit 102 raises the cup 90 vertically upward to the side of the substrate W during a period in which the chemical liquid supply unit 30, the rinsing liquid supply unit 40, the drying liquid supply unit 50, and / or the gas supply unit 60 supply the chemical liquid, the rinsing liquid, the drying liquid, and / or the inert gas to the substrate W. Furthermore, the control unit 102 lowers the cup 90 vertically downward from the side of the substrate W after the period in which the chemical liquid supply unit 30, the rinsing liquid supply unit 40, the drying liquid supply unit 50, and / or the gas supply unit 60 supply the chemical liquid, the rinsing liquid, the drying liquid, and / or the inert gas to the substrate W has ended.

[0084] Next, a substrate processing method using the substrate processing apparatus 100 will be described with reference to FIGS. 6 to 9. FIG. 6 is a flowchart showing the substrate processing method using the substrate processing apparatus 100 of the first embodiment. FIG. 7 is a cross-sectional view schematically showing the state around the substrate W at step S14 of the substrate processing method using the substrate processing apparatus 100 of the first embodiment. FIG. 8 is a cross-sectional view schematically showing the state around the substrate W at step S17 of the substrate processing method using the substrate processing apparatus 100 of the first embodiment. FIG. 9 is a cross-sectional view schematically showing the state around the substrate W at step S19 of the substrate processing method using the substrate processing apparatus 100 of the first embodiment. In FIGS. 7 to 9, for ease of understanding, the downflow formed by the blower unit 12 is schematically indicated by arrows. The substrate processing method using the substrate processing apparatus 100 includes steps S11 to S20. Steps S11 to S20 are executed by the control unit 102.

[0085] Step S11 is an example of the "step of starting the supply of gas" of the present invention. Step S12 is an example of the "step of starting the rotation of the substrate" of the present invention. Step S14 is an example of the "step of treating the substrate" of the present invention. Step S15 is an example of the "step of replacing with a rinsing liquid" of the present invention. Step S16 is an example of the "step of reducing the exhaust pressure" of the present invention. Step S17 is an example of the "step of replacing with a drying liquid" of the present invention. Step S18 is an example of the "step of reducing the exhaust pressure" of the present invention. Step S19 is an example of the "step of drying the substrate" of the present invention.

[0086] 6, in step S11, the supply of gas to the chamber 11 is started. Specifically, the control unit 102 controls the blower unit 12 to start supplying air into the chamber 11.

[0087] Next, in step S12, rotation of the substrate W is started. Specifically, the control unit 102 controls the center robot CR to load the substrate W into the chamber 11, and controls the substrate holding unit 20 to hold the loaded substrate W. Then, the control unit 102 controls the substrate holding unit 20 to start rotation of the substrate W. In the following description, the rotation speed of the substrate W in step S12 may be referred to as a first rotation speed.

[0088] Next, in step S13, exhausting of the inside of the cup 90 is started. Specifically, the control unit 102 controls the exhaust device 80 to start driving the exhaust fan 82. At this time, in this embodiment, the control unit 102 controls the damper 83 to maximize the opening of the flow path of the exhaust pipe 81, for example. In the following description, the opening of the flow path of the exhaust pipe 81 in step S13 may be referred to as a first opening. Furthermore, the exhaust pressure in step S13 may be referred to as a first exhaust pressure.

[0089] Next, in step S14, a chemical liquid is supplied to the substrate W to process the substrate W. Specifically, the control unit 102 controls the chemical liquid supply unit 30 to supply the chemical liquid from the nozzle 36 to the substrate W being rotated by the substrate holding unit 20. Then, when a predetermined time has elapsed since the start of the supply of the chemical liquid, the control unit 102 controls the chemical liquid supply unit 30 to stop the supply of the chemical liquid.

[0090] 7, in step S14, a large amount of particles Pa is generated on the substrate W. However, because the exhaust pressure for exhausting the gas in the cup 90 is the relatively large first exhaust pressure, most of the particles Pa are exhausted by the exhaust device 80. In other words, floating of the particles Pa is suppressed.

[0091] Next, in step S15, a rinse liquid is supplied to the substrate W to replace the chemical liquid on the substrate W with the rinse liquid. Specifically, the control unit 102 controls the rinse liquid supply unit 40 to supply the rinse liquid from the nozzle 46 to the substrate W being rotated by the substrate holding unit 20. As a result, the chemical liquid on the substrate W is replaced with the rinse liquid.

[0092] In this embodiment, in step S15, the rotation speed of the substrate W is reduced. Specifically, the control unit 102 controls the substrate holding unit 20 to change the rotation speed of the substrate W from a first rotation speed (e.g., several hundred rpm to 1000 rpm or more) to a second rotation speed (e.g., several tens of rpm or less) that is lower than the first rotation speed. Then, when a predetermined time has elapsed since the start of supply of the rinsing liquid, the control unit 102 controls the rinsing liquid supply unit 40 to stop supply of the rinsing liquid.

[0093] Next, in step S16, the exhaust pressure is reduced. Specifically, the control unit 102 controls the exhaust device 80 to change the angle of the damper 83, thereby changing the opening degree of the flow path of the exhaust pipe 81 to a second opening degree that is smaller than the first opening degree. As a result, the exhaust pressure at which the gas in the cup 90 is exhausted becomes a second exhaust pressure that is lower than the first exhaust pressure.

[0094] Next, in step S17, a drying liquid is supplied to the substrate W to replace the rinsing liquid on the substrate W with the drying liquid. Specifically, the control unit 102 controls the drying liquid supply unit 50 to supply the drying liquid from the nozzle 56 to the substrate W being rotated by the substrate holder 20. As a result, the rinsing liquid on the substrate W is replaced with the drying liquid.

[0095] 8, in step S17, particles Pa are generated on the substrate W. The amount of particles Pa generated in step S17 is smaller than the amount of particles Pa generated in step S14. Although the exhaust pressure in step S17 is lower than the exhaust pressure in step S14, the amount of particles Pa generated is also small, and therefore most of the particles Pa are exhausted by the exhaust device 80.

[0096] In this embodiment, the rotation speed of the substrate W is increased in step S17. Specifically, the control unit 102 controls the substrate holding unit 20 to change the rotation speed of the substrate W from the second rotation speed to a third rotation speed that is higher than the second rotation speed. The third rotation speed may be the same as the first rotation speed or may be different from the first rotation speed. Then, when a predetermined time has elapsed since the start of supply of the drying liquid, the control unit 102 controls the drying liquid supply unit 50 to stop supply of the drying liquid.

[0097] Next, in step S18, the exhaust pressure is reduced. Specifically, the control unit 102 controls the exhaust device 80 to change the angle of the damper 83, thereby changing the opening degree of the flow path of the exhaust pipe 81 to a third opening degree that is smaller than the second opening degree. As a result, the exhaust pressure at which the gas in the cup 90 is exhausted becomes a third exhaust pressure that is lower than the second exhaust pressure.

[0098] Next, in step S19, the substrate W is dried. In this embodiment, the drying liquid on the substrate W is removed by rotating the substrate W while forming air currents P1 to P3 that flow along the upper surface Wa of the substrate W, thereby drying the substrate W. Specifically, the control unit 102 controls the gas supply unit 60 to move the nozzle 66 downward and bring it close to the substrate W. Then, the control unit 102 controls the gas supply unit 60 to eject an inert gas from the nozzle 66 and form the air currents P1 to P3 that flow along the upper surface Wa of the substrate W. As a result, the substrate W rotates while the upper surface Wa of the substrate W is covered with the air currents P1 to P3, and the substrate W is dried. Then, when a predetermined time has elapsed since the start of the supply of the inert gas, the control unit 102 controls the gas supply unit 60 to stop the supply of the inert gas.

[0099] 9, in step S19, floating particles, etc. Pa descend. However, in step S19, the exhaust pressure (third exhaust pressure) is lower than the first and second exhaust pressures, so the flow rate of the gas drawn into the cup 90 from above the upper surface Wa of the substrate W can be reduced. This makes it possible to form air currents P1 to P3 that flow along the upper surface Wa of the substrate W. In other words, it is possible to prevent the air currents P1 to P3 from becoming turbulent and being destroyed. Therefore, the upper surface Wa of the substrate W can be shielded by the air currents P1 to P3, so that it is possible to prevent the descending particles, etc. Pa from adhering to the upper surface Wa of the substrate W.

[0100] Next, in step S20, the rotation of the substrate W is stopped. Specifically, the control unit 102 controls the substrate holding unit 20 to stop the rotation of the substrate W.

[0101] In this manner, the processing of the substrate W is completed.

[0102] For ease of understanding, the example has been described in which the supply of the rinsing liquid is stopped in step S15, the exhaust pressure is reduced in step S16, and then the drying liquid is supplied to the substrate W in step S17, but the present invention is not limited to this. For example, the exhaust pressure may be reduced before the supply of the rinsing liquid is stopped. Also, for example, the exhaust pressure may be reduced after the supply of the drying liquid is started.

[0103] For ease of understanding, the example has been described in which the supply of drying liquid is stopped in step S17, the exhaust pressure is reduced in step S18, and then the inert gas is ejected from the nozzle 66 in step S19, but the present invention is not limited to this. For example, the exhaust pressure may be reduced before the supply of drying liquid is stopped.

[0104] In this embodiment, as described above, in the step of drying the substrate W (step S19), an inert gas is discharged from the nozzle 66 to form air currents P1 to P3 that flow along the upper surface Wa of the substrate W, while the substrate W is rotated to remove the drying liquid on the substrate W, thereby drying the substrate W. Furthermore, the exhaust pressure (third exhaust pressure) for exhausting the gas in the cup 90 in the step of drying the substrate W (step S19) is lower than the exhaust pressure (first exhaust pressure) in the step of treating the substrate W with a chemical liquid (step S14). Therefore, the flow rate of the gas drawn into the cup 90 from above the upper surface Wa of the substrate W can be reduced. This makes it possible to form the air currents P1 to P3 that flow along the upper surface Wa of the substrate W. In other words, it is possible to prevent the air currents P1 to P3 from becoming turbulent and being destroyed. Therefore, the upper surface Wa of the substrate W can be shielded by the air currents P1 to P3, thereby preventing descending particles Pa from adhering to the upper surface Wa of the substrate W.

[0105] Furthermore, as described above, the step of lowering the exhaust pressure (steps S16 and S18) is provided prior to the step of drying the substrate W (step S19). Therefore, the exhaust pressure (third exhaust pressure) for exhausting the gas inside the cup 90 in the step of drying the substrate W (step S19) can be easily made lower than the exhaust pressure (first exhaust pressure) in the step of treating the substrate W with the chemical liquid (step S14).

[0106] Furthermore, as described above, the exhaust pressure (third exhaust pressure) in the step of drying the substrate W (step S19) is lower than the exhaust pressure (first exhaust pressure) in the step of replacing the gas with a rinse liquid (step S15). Therefore, in the step of drying the substrate W (step S19), the flow rate of the gas drawn into the cup 90 from above the upper surface Wa of the substrate W can be easily reduced.

[0107] In this embodiment, the exhaust pressure (first exhaust pressure) in the step of replacing with the rinse liquid (step S15) is the same as the exhaust pressure (first exhaust pressure) in the step of treating the substrate W with the chemical liquid (step S14). Therefore, similar to step S14, most of the particles Pa can be exhausted by the exhaust device 80 in step S15. That is, floating of the particles Pa can be suppressed.

[0108] Furthermore, as described above, the exhaust pressure (second exhaust pressure) in the step of replacing with a drying liquid (step S17) is lower than the exhaust pressure (first exhaust pressure) in the step of treating the substrate W with a chemical liquid (step S14). Therefore, in the step of replacing with a drying liquid (step S17), the flow rate of gas drawn into the cup 90 from the upper surface Wa of the substrate W can be reduced. This makes it possible to prevent a decrease in the temperature of the drying liquid, thereby preventing condensation on the substrate W due to a decrease in temperature.

[0109] Furthermore, as described above, the exhaust pressure (second exhaust pressure) in the step of replacing with the drying liquid (step S17) is higher than the exhaust pressure (third exhaust pressure) in the step of drying the substrate W (step S19). Therefore, in the step of replacing with the drying liquid (step S17), it is possible to prevent the generated particles Pa from being difficult to exhaust by the exhaust device 80.

[0110] Furthermore, as described above, in the step of replacing the liquid with the rinse liquid (step S15), the rotation speed of the substrate W is reduced, which can prevent particles Pa and the like from being stirred up and floating in the air.

[0111] Furthermore, as described above, in the step of replacing with the drying liquid (step S17), the rotation speed of the substrate W is increased. Therefore, when the supply of the drying liquid to the substrate W is stopped, the rotation speed of the substrate W is in a relatively high state. This prevents the time from being long until the substrate W is completely dried after the supply of the drying liquid to the substrate W is stopped.

[0112] As described above, the nozzle 66 has a central outlet 66a that discharges gas toward the center of the upper surface Wa of the substrate W, and a first outer peripheral outlet 66b and a second outer peripheral outlet 66c that discharge gas radially from the center toward the periphery of the upper surface Wa of the substrate W. Therefore, air currents P1 to P3 that flow along the upper surface Wa of the substrate W can be easily formed.

[0113] (Second embodiment) Next, a substrate processing apparatus 100 according to a second embodiment of the present invention will be described with reference to Figures 10 and 11. Figure 10 is a block diagram of the substrate processing apparatus 100 according to the second embodiment. Unlike the first embodiment, the second embodiment describes a case in which the output of the blower unit 12 is changed.

[0114] As shown in FIG. 10, in the second embodiment, the blower unit 12 has an output adjuster 12b that changes the amount of air blown. The output adjuster 12b is an example of the "air blow rate changer" of the present invention. The output adjuster 12b adjusts the output of the intake fan 12a. For example, the output adjuster 12b changes the rotation speed [rpm] of the intake fan 12a to change the output of the intake fan 12a. The output adjuster 12b includes, for example, a driver circuit. The driver circuit generates a drive current that drives the motor of the intake fan 12a.

[0115] In this embodiment, the control unit 102 controls the output adjustment unit 12b of the blower unit 12 to control the amount of air sent into the chamber 11. For example, the control unit 102 can control the output adjustment unit 12b to change the rotation speed of the intake fan 12a.

[0116] Next, a substrate processing method using the substrate processing apparatus 100 of the second embodiment will be described with reference to Fig. 11. Fig. 11 is a flowchart showing the substrate processing method using the substrate processing apparatus 100 of the second embodiment.

[0117] As shown in FIG. 11, steps S11 to S16 are the same as those in the first embodiment.

[0118] Next, in step S161, the output of the intake fan 12a is reduced. That is, the control unit 102 controls the output adjustment unit 12b of the blower unit 12 to reduce the amount of air sent into the chamber 11. Specifically, the control unit 102 sets the output of the intake fan 12a in step S161 to be lower than the output (first output) of the intake fan 12a in the step of treating the substrate W with the chemical liquid (step S14). As a result, the amount of gas sent by the blower unit 12 into the chamber 11 becomes smaller than the gas blowing rate (first air blowing rate) in the step of treating the substrate W with the chemical liquid (step S14).

[0119] More specifically, in step S16, the amount of air exhausted from inside chamber 11 to the outside of chamber 11 decreases due to the lowering of the exhaust pressure. In this case, the air pressure inside chamber 11 increases. Therefore, in this embodiment, control unit 102 controls output adjustment unit 12b so as to maintain the air pressure inside chamber 11 (the detection result of pressure sensor 112) constant. Therefore, the air pressure inside chamber 11 is maintained approximately constant.

[0120] Next, steps S17 and S18 are executed in the same manner as in the first embodiment.

[0121] Next, in step S181, the output of intake fan 12a is further reduced. That is, control unit 102 controls output adjustment unit 12b of blower unit 12 to further reduce the amount of air sent into chamber 11. Specifically, control unit 102 sets the output (second output) of intake fan 12a in step S181 to be lower than the output of intake fan 12a in the step of replacing with drying liquid (step S17). As a result, the amount of gas sent by blower unit 12 into chamber 11 (second airflow rate) becomes smaller than the airflow rate in the step of replacing with drying liquid (step S17).

[0122] More specifically, in step S18, the exhaust pressure is further reduced, which further reduces the amount of air exhausted from inside chamber 11 to the outside of chamber 11. In this case, the air pressure inside chamber 11 increases. Therefore, in this embodiment, control unit 102 controls output adjustment unit 12b so as to maintain the air pressure inside chamber 11 (the detection result of pressure sensor 112) constant. Therefore, the air pressure inside chamber 11 is maintained approximately constant.

[0123] Other configurations and substrate processing methods of the second embodiment are similar to those of the first embodiment.

[0124] In this embodiment, as described above, in the step of treating the substrate W with a chemical liquid (step S14), the air blowing unit 12 supplies gas into the chamber 11 at a first air blowing rate, and in the step of drying the substrate W (step S19), the air blowing unit 12 supplies gas into the chamber 11 at a second air blowing rate that is smaller than the first air blowing rate. Therefore, even if the exhaust pressure in the step of drying the substrate W (step S19) is low, for example, it is possible to prevent the air pressure inside the chamber 11 from becoming high.

[0125] Furthermore, as described above, in the step of treating the substrate W with a chemical liquid (step S14), the output adjustment unit 12b drives the intake fan 12a at a first output, and in the step of drying the substrate W (step S19), the output adjustment unit 12b drives the intake fan 12a at a second output that is lower than the first output. Therefore, in the step of drying the substrate W (step S19), the air blowing unit 12 can easily supply gas into the chamber 11 at an air blowing rate (second air blowing rate) that is lower than the air blowing rate (first air blowing rate) in the step of treating the substrate W with a chemical liquid (step S14).

[0126] Other effects of the second embodiment are the same as those of the first embodiment.

[0127] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be implemented in various forms without departing from the spirit of the present invention. Furthermore, the components disclosed in the above embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be deleted from the embodiment.

[0128] The drawings mainly show each component in a schematic manner to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

[0129] For example, in the above embodiment, the exhaust pressure is reduced twice, in step S16 and step S18, but the present invention is not limited to this. For example, the exhaust pressure may be reduced from the first exhaust pressure to the third exhaust pressure in either step S16 or step S18.

[0130] In the above embodiment, the exhaust pressure is reduced after step S15, but the present invention is not limited to this. For example, in the step of replacing with a rinse liquid (step S15), the exhaust pressure may be reduced before stopping the supply of the rinse liquid, provided that the rotation speed of the substrate W is reduced to the second rotation speed.

[0131] In the above embodiment, the rotation speed of the substrate W is reduced in the step of replacing with a rinse liquid (step S15), but the present invention is not limited to this. For example, the rotation speed of the substrate W does not have to be reduced in the step of replacing with a rinse liquid (step S15).

[0132] In the above embodiment, the exhaust pressure is adjusted by changing the opening of the flow path of the exhaust pipe 81, but the present invention is not limited to this. For example, the exhaust pressure may be adjusted by adjusting the rotation speed of the exhaust fan 82.

[0133] In the above embodiment, the rotation speed of the intake fan 12a is changed to change the airflow rate of the air blowing unit 12. However, the present invention is not limited to this. For example, the airflow rate of the air blowing unit 12 may be changed by providing a damper (airflow rate changer) in the air blowing unit 12 and changing the opening degree of the flow path with the damper.

[0134] Furthermore, in the above embodiment, an example has been described in which the nozzle 56 moves integrally with the nozzle 66, but the present invention is not limited to this. For example, the nozzle 56 and the nozzle 66 may be configured to move separately. [Industrial Applicability]

[0135] The present invention is useful in the field of substrate processing. [Explanation of symbols]

[0136] 11: Chamber 12a: Intake fan (fan) 12b: Output adjustment unit (airflow volume change unit) 20: Board holding part 36: Nozzle (chemical nozzle) 46: Nozzle (rinse liquid nozzle) 56: Nozzle (drying liquid nozzle) 66: Nozzle (gas discharge nozzle) 66a: Central discharge port (first discharge port) 66b: 1st outer circumference discharge port (1st discharge port) 66c: 2nd outer circumference discharge port (1st discharge port) 80: Exhaust system 83: Damper (exhaust pressure adjustment part) 90: Cup (processing cup) 100: Substrate processing apparatus P1~P3: Airflow S11: Step (process for starting gas supply) S12: Step (process for starting rotation of substrate) S14: Step (substrate processing step) S15: Step (process of replacing with rinse liquid) S16: Step (process to reduce exhaust pressure) S17: Step (replacement with drying liquid) S18: Step (process to reduce exhaust pressure) S19: Step (substrate drying process) W: Substrate Wa: Top

Claims

1. Initiating rotation of the substrate; a step of supplying a chemical solution to the substrate while exhausting gas from a processing cup surrounding the substrate; supplying a rinse liquid to the substrate to replace the chemical liquid on the substrate with the rinse liquid; supplying a drying liquid to the substrate to replace the rinse liquid on the substrate with the drying liquid; a step of drying the substrate by rotating the substrate and removing the drying liquid on the substrate while discharging gas from a gas discharge nozzle disposed above the substrate to form an airflow that flows along the upper surface of the substrate; Including, a lower exhaust pressure for exhausting the gas in the processing cup in the drying step than the exhaust pressure in the processing step.

2. 2. The substrate processing method according to claim 1, further comprising the step of reducing the exhaust pressure prior to the drying step.

3. 3. The substrate processing method according to claim 1, wherein the exhaust pressure in the drying step is lower than the exhaust pressure in the replacing with the rinse liquid step.

4. 3. The substrate processing method according to claim 1, wherein the exhaust pressure in the step of replacing with the drying liquid is lower than the exhaust pressure in the step of processing.

5. 5. The substrate processing method according to claim 4, wherein the exhaust pressure in the step of replacing with the drying liquid is higher than the exhaust pressure in the step of drying.

6. 3. The substrate processing method according to claim 1, wherein the rotation speed of the substrate is reduced in the step of replacing the liquid with the rinse liquid.

7. The substrate processing method according to claim 6 , wherein the rotation speed of the substrate is increased in the step of replacing the liquid with the drying liquid.

8. a step of starting supplying the gas into the chamber from an upper portion of the chamber accommodating the substrate by a blower unit having a fan for supplying the gas, prior to the processing step; The air blowing unit has an air blowing amount change unit that changes the air blowing amount, In the treating step, the blower unit supplies the gas into the chamber at a first blowing amount; 3. The substrate processing method according to claim 1, wherein in the drying step, the air blowing unit supplies the gas into the chamber at a second air blowing rate that is smaller than the first air blowing rate.

9. In the processing step, the airflow rate change unit drives the fan at a first output, The substrate processing method according to claim 8 , wherein in the drying step, the airflow rate changing unit drives the fan at a second output lower than the first output.

10. 3. The substrate processing method according to claim 1, wherein the gas discharge nozzle has a first discharge port that discharges the gas toward the center of the upper surface of the substrate, and a second discharge port that discharges the gas radially from the center side toward the peripheral side of the upper surface of the substrate.

11. a substrate holder that holds a substrate and rotates the substrate; a processing cup enclosing the substrate and the substrate holder; an exhaust device that exhausts gas from the processing cup; a chemical nozzle for supplying a chemical to the substrate; a rinse liquid nozzle that supplies a rinse liquid to the substrate; a drying liquid nozzle for supplying a drying liquid to the substrate; a gas discharge nozzle disposed above the substrate and discharging gas to form an air current that flows along the upper surface of the substrate; Equipped with the substrate holder rotates the substrate in a state where an air current flows along an upper surface of the substrate, thereby removing the drying liquid on the substrate, thereby drying the substrate; the exhaust device has an exhaust pressure adjusting unit that adjusts the exhaust pressure at which gas is exhausted from the processing cup, The substrate processing apparatus, wherein the exhaust pressure adjusting unit makes the exhaust pressure when the gas discharge nozzle forms the airflow lower than the exhaust pressure when the chemical liquid nozzle discharges the chemical liquid onto the upper surface of the substrate.

Images