Substrate holding member and ceramic susceptor

Abstract

To provide a technology for improving the toughness of ceramic components constituting a substrate holding member.SOLUTION: An electrostatic chuck module 100 comprises a tabular ceramic base material 110, and a tabular ceramic base 150 bonded to the bottom surface 113 of the ceramic material 110. The ceramic base 150 consists of a SiC ceramic matrix bonded to a plurality of composite materials, including a flat-woven fabric 310 of reinforced fibers.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a substrate holding member and a ceramic susceptor. [Background technology]

[0002] Patent Document 1 discloses an electrostatic chuck as an example of a substrate holding member having a wafer mounting surface for holding a substrate such as a wafer. The electrostatic chuck described in Patent Document 1 is formed of a ceramic sintered body having a flow path formed therein through which a fluid flows. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6092857 Summary of the Invention [Problem to be solved by the invention]

[0004] The electrostatic chuck described in Patent Document 1 is fabricated by stacking ceramic molded bodies and co-firing them to produce a ceramic sintered body having a flow path therein. In the electrostatic chuck described in Patent Document 1, no measures are taken to prevent the brittleness of the ceramic sintered body. Therefore, the brittleness of the ceramic sintered body becomes a problem when an unintended external force is applied to the electrostatic chuck, for example, when the electrostatic chuck is accidentally dropped during handling.

[0005] The present invention has been made in view of the above circumstances, and has an object to provide a technique for improving the toughness of ceramic members that constitute a substrate holding member. [Means for solving the problem]

[0006] According to an aspect of the present invention, there is provided a ceramic substrate having a plate shape and a first main surface and a second main surface facing the first main surface in a vertical direction; a plate-shaped ceramic base having a third main surface joined to the second main surface of the ceramic base and having a flow path formed therein; The ceramic base is provided as a substrate holding member characterized in that it is formed by bonding a plurality of composite materials each having a ceramic matrix and including at least one of reinforcing fibers and whiskers. [Effects of the Invention]

[0007] According to the above configuration, the ceramic base is made of a ceramic matrix to which multiple composite materials containing reinforcing fibers and / or whiskers are bonded, thereby improving the toughness of the ceramic base and improving its resistance to external forces compared to when the ceramic base does not contain reinforcing fibers and / or whiskers. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a perspective view of an electrostatic chuck module 100. [Figure 2] FIG. 2 is a schematic illustration of an electrostatic chuck module 100 including a ceramic base 150 having a reinforcing fiber fabric 310 . [Figure 3] FIG. 3 is a schematic explanatory diagram showing the shape of the electrostatic attraction electrode 124. As shown in FIG. [Figure 4] FIG. 4 is a schematic illustration of an electrostatic chuck module 100 including a ceramic base 150 having short reinforcing fibers 320. As shown in FIG. [Figure 5] 1(a) to 1(d) are diagrams showing the flow of a method for manufacturing the ceramic base 110. FIG. [Figure 6] 10(a) to 10(d) are diagrams showing the flow of another method for manufacturing the ceramic base 110. FIG. [Figure 7] FIG. 7 is a flowchart showing the flow of a method for manufacturing the ceramic base 150. [Figure 8](a) is an explanatory diagram showing the state in which a groove 131 is formed in sintered body 150A of the three sintered bodies 150A, 150B, and 150C, and (b) is an explanatory diagram showing the state in which a groove 131 is formed in sintered bodies 150A and 150B of the three sintered bodies 150A, 150B, and 150C. [Figure 9] FIG. 9 is a flowchart showing the flow of another method for manufacturing the ceramic base 150. [Figure 10] FIG. 10 is a schematic diagram illustrating a reinforcing fiber fabric 310 disposed directly above the wall portion 132 between the flow channels 130. As shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0009] <Electrostatic chuck module 100> An electrostatic chuck module 100 according to this embodiment will be described with reference to FIGS. 1 and 2. The electrostatic chuck module 100 according to this embodiment is an example of a substrate holding member for attracting and holding a semiconductor wafer such as a silicon wafer (hereinafter simply referred to as a wafer 10). In the following description, the up-down direction 5 is defined based on the state in which the electrostatic chuck module 100 is installed and ready for use (the state shown in FIG. 1). As shown in FIG. 1, the electrostatic chuck module 100 according to this embodiment mainly includes a ceramic substrate 110, an electrostatic attraction electrode 124 (see FIGS. 2 and 3), and a ceramic base 150.

[0010] The ceramic substrate 110 is a circular, plate-like member with a diameter of 12 inches (approximately 300 mm) and includes two main surfaces (an upper surface 111 and a lower surface 113) facing each other in the vertical direction 5. The upper surface 111 and the lower surface 113 of the ceramic substrate 110 correspond to the first and second main surfaces of the present invention, respectively. A wafer 10 to be held is placed on the upper surface 111 of the ceramic substrate 110. Note that in FIG. 1, the wafer 10 and the ceramic substrate 110 are shown separated from each other for ease of viewing. In this embodiment, the ceramic substrate 110 is formed of a sintered ceramic body. For example, the AlN content can be 90% or more. Note that the ceramic substrate 110 does not necessarily have to be formed of AlN ceramics. For example, the ceramic substrate 110 may be formed of a sintered ceramic body containing Al2O3 (referred to as Al2O3 ceramics).

[0011] Although not shown, the upper surface 111 of the ceramic substrate 110 can be provided with a ring-shaped protrusion arranged on the outer periphery (outer edge) and multiple cylindrical protrusions arranged inside the ring-shaped protrusion.

[0012] A gas flow path (not shown) can be formed inside the ceramic base 110. The gas flow path can be used as a flow path for supplying gas to a space (gap) defined by the upper surface 111 of the ceramic base 110 and the lower surface of the wafer 10. Conversely, gas can be exhausted from the space (gap) defined by the upper surface 111 of the ceramic base 110 and the lower surface of the wafer 10 via the gas flow path. In this case, the pressure difference between the pressure outside the gap and the pressure inside the gap can be adjusted by adjusting the exhaust pressure. This allows the wafer 10 to be adsorbed toward the upper surface of the ceramic base 110.

[0013] 2, an electrostatic attraction electrode 124 is embedded inside the ceramic base 110. The electrostatic attraction electrode 124 can be embedded at a position 0.1 mm to 2.0 mm below the upper surface 111 of the ceramic base 110. In other words, the thickness of the ceramic insulating layer from the upper surface 111 of the ceramic base 110 to the electrostatic attraction electrode 124 can be 0.1 mm or more and 2.0 mm or less.

[0014] 3, the electrostatic attraction electrode 124 has two semicircular electrodes 124a and 124b arranged facing each other with a predetermined distance between them, and has a generally circular shape as a whole. In this embodiment, the outer diameter of the electrostatic attraction electrode 124 is 292 mm. The wafer 10 can be electrostatically attracted by applying a predetermined voltage (e.g., ±500 V) to each of the electrodes 124a and 124b. In this embodiment, the ceramic base 110 and the electrostatic attraction electrode 124 form an electrostatic chuck.

[0015] As shown in FIG. 2, a ceramic base 150 is bonded to the lower surface 113 of the ceramic substrate 110. The ceramic base 150 has a circular plate shape with the same diameter as the ceramic substrate 110 and includes two main surfaces (an upper surface 151 and a lower surface 153) facing each other in the vertical direction 5. The upper surface 151 of the ceramic base 150 corresponds to the third main surface of the present invention. In this embodiment, the ceramic base 150 is formed of a plurality of composite materials including a SiC ceramic matrix and reinforcing fibers or whiskers. For example, as shown in FIG. 2, a reinforcing fiber woven fabric 310 (described below) can be disposed inside the ceramic base 150. Alternatively, as shown in FIG. 4, short reinforcing fibers 320 (described below) can be disposed inside the ceramic base 150. Note that in this specification, reinforcing fibers do not include metallic fibers. Details of the plurality of composite materials including reinforcing fibers or whiskers will be described later.

[0016] The thermal conductivity of SiC ceramics is 70 W / mk or higher. Because SiC ceramics have high resistance to water, water can be used as a cooling fluid through the flow paths 130 formed inside the ceramic base 150. Water has a high heat transfer coefficient and is suitable for absorbing large amounts of heat. SiC ceramics may be formed by adding sintering aids such as B4C and C in addition to SiC, which improves sinterability. They may also contain metal borides, metal carbides, metal nitrides, and the like. For example, borides of metals from Groups 4 to 6 of the periodic table can be used as metal borides. This allows the linear thermal expansion coefficient to be adjusted, facilitating bonding to the ceramic substrate 110.

[0017] Next, a method for manufacturing the electrostatic chuck module 100 will be described. In the following, an example will be described in which the ceramic base 110 is an AlN ceramic formed of AlN. The AlN ceramic is formed of AlN ceramics containing AlN as a main component. Here, AlN ceramics containing AlN as a main component refers to a ceramic sintered body containing 50 wt% or more of AlN. In addition, for the sake of simplicity, it is assumed that only the electrostatic attraction electrode 124 is embedded in the ceramic base 110.

[0018] First, a method for manufacturing the ceramic substrate 110 will be described. As shown in FIG. 5(a), granulated powder P containing AlN powder as a main component is placed in a carbon mold with a bed 601 and pre-pressed with a punch 602. The granulated powder P preferably contains 7 wt % or less of a sintering aid (e.g., YO). Next, as shown in FIG. 5(b), an electrode 124 cut into a predetermined shape is placed on the pre-pressed granulated powder P. The electrode 124 is placed parallel to a plane perpendicular to the pressure direction (the bottom surface of the mold with a bed 601). At this time, a W pellet or a Mo pellet may be embedded at the position of the terminal 124T (see FIG. 3) of the electrode 124.

[0019] As shown in FIG. 5(c), granulated powder P is further poured into the bed-type mold 601 so as to cover the electrostatic chucking electrode 124, and then pressed and molded with a punch 602. At this time, the amount of granulated powder P covering the electrostatic chucking electrode 124 can be adjusted so that the electrostatic chucking electrode 124 is embedded at a depth of 0.3 mm or more. Next, as shown in FIG. 5(d), the granulated powder P with the electrostatic chucking electrode 124 embedded therein is fired in a pressed state. The pressure applied during firing is preferably 1 MPa or more. Furthermore, firing is preferably performed at a temperature of 1800°C or more. Note that firing can be performed multiple times. Next, to form the terminal 124T (see FIG. 3), blind holes are drilled down to the electrostatic chucking electrode 124. Note that if a pellet is embedded, blind holes can be drilled down to the pellet. Furthermore, if necessary, through holes can be formed to form gas channels. In this case, a ceramic substrate 110 having a gas channel formed therein can be produced.

[0020] The upper surface 111 and the lower surface 113 of the ceramic base 110 thus formed are ground, and further polished as necessary. At this time, the distance in the vertical direction 5 from the upper surface 111 of the ceramic base 110 to the electrostatic attraction electrode 124 can be adjusted. Furthermore, by sandblasting the upper surface 111, it is possible to form a plurality of convex portions and an annular convex portion on the upper surface 111. Note that although sandblasting is a suitable processing method for forming the plurality of convex portions and the annular convex portion, other processing methods can also be used.

[0021] The ceramic substrate 110 can also be manufactured by the following method. If necessary, 7 wt% or less of a sintering aid (YO) is added to the AlN raw material powder. Metal carbides, metal nitrides, or metal borides can also be added to the AlN raw material powder. Next, a binder is added to the AlN raw material powder, and the mixture is mixed in ethanol, dried, and then granulated to produce granulated powder containing AlN as a component. The granulated powder is then filled into a rubber mold and isostatically pressed (CIP) using water pressure to produce two plate-shaped CIP compacts 610 (see FIG. 6(a)). For example, CIP molding can be performed at a pressure of 130 MPa. Next, the CIP compacts 610 are degreased to remove the binder (see FIG. 6(b)). Next, as shown in FIG. 6(c), a recess 611 for embedding the electrostatic attraction electrode 124 is formed in one of the degreased CIP compacts 610. The recess 611 may be formed in the CIP compact 610 before degreasing. After the electrostatic chucking electrode 124 is placed in the recess 611 of the CIP compact 610, another CIP compact 610 is stacked on top of it. The thickness of the other CIP compact 610 can be adjusted so that the electrostatic chucking electrode 124 is embedded at a depth of 0.3 mm or more. Next, as shown in FIG. 6(d), the stacked CIP compacts 610 sandwiching the electrostatic chucking electrode 124 are fired in a pressed state to produce a fired compact. The pressure applied during firing is preferably 1 MPa or more. Furthermore, firing is preferably performed at a temperature of 1800°C or higher. Firing can also be performed multiple times. Since the process after producing the fired compact is similar to the process described above, a description thereof will be omitted.

[0022] Next, a method for manufacturing the ceramic base 150 will be described with reference to the flowchart in FIG. 7. Below, a method for manufacturing the ceramic base 150 having a reinforcing fiber fabric 310 disposed therein, as shown in FIG. 2, will be described. First, raw materials are mixed and granulated (S101). Specifically, 4 wt% or less of sintering aids (B4C, C) are added to the SiC raw material powder as needed. Metal carbides, metal nitrides, and metal borides can also be added to the SiC raw material powder. Next, a binder is added to the SiC raw material powder, and the mixture is mixed in ethanol, dried, and then granulated to produce granulated powder Q containing SiC as a component. Next, the granulated powder Q is filled into a rubber mold and is subjected to isostatic hydraulic pressing (CIP) to produce multiple plate-shaped CIP molded bodies (S102). For example, CIP molding can be performed at a pressure of 130 MPa. Next, the CIP molded body is subjected to an external shaping process to form grooves 131 that will later become the flow paths 130 (S103). For example, as shown in FIGS. 8(a) and 8(b), a case where three CIP molded bodies 150A, 150B, and 150C are stacked will be described. As shown in FIG. 8(a), grooves 131 are formed on the top surface of CIP molded body 150A, and another plate-shaped CIP molded body 150B is stacked on top of it, thereby forming flow paths 130 inside the stack of CIP molded bodies 150A. Alternatively, as shown in FIG. 8(b), grooves 131 are formed on the top surface of CIP molded body 150A and the bottom surface of another CIP molded body 150B, and these are stacked to form flow paths 130 inside the stack of CIP molded bodies 150.

[0023] Next, the CIP molded body is degreased to remove the binder (S104). Next, the degreased CIP molded bodies are stacked. At this time, as shown in FIGS. 8(a) and 8(b), a reinforcing fiber fabric 310 is sandwiched between the CIP molded bodies 150B and 150C (S105). Next, the stack of CIP molded bodies 150A, 150B, and 150C stacked with the reinforcing fiber fabric 310 sandwiched therebetween is fired in a pressed state to produce a fired body (S106). The pressure applied during firing is preferably 1 MPa or more. Furthermore, firing is preferably performed at a temperature of 1900°C or more. The firing time is preferably 2 hours or more. Note that firing can be performed multiple times.

[0024] In this way, when a stack of CIP molded bodies 150A to 150C stacked so as to sandwich a reinforcing fiber fabric 310 (see Figures 8(a) and 8(b)) is fired in a pressed state, the CIP molded bodies 150A to 150C can be simultaneously bonded by diffusion bonding.

[0025] A fired body can be produced by sandwiching and pressing the reinforcing fiber fabric 310 between the CIP molded bodies 150B and 150C, and a fired body of the CIP molded body 150C can also be produced.

[0026] In this case, these two sintered bodies can be bonded by diffusion bonding. In the case of diffusion bonding, there is no need to interpose a bonding material between the two sintered bodies. Note that "no bonding material" means that no bonding layer can be observed at the optical microscope level (magnification of about 500x). Therefore, the two sintered bodies can be bonded in a state of direct contact. This makes it possible to increase the bonding strength and improve the reliability of the bond compared to bonding via a bonding layer as described below.

[0027] The two sintered bodies do not necessarily have to be joined by diffusion bonding. They can also be joined by hard brazing. A hard brazing material is a brazing material having a melting point (including the liquidus temperature and glass transition temperature) of 450°C or higher. By heating the CIP molded bodies 150A and 150B with a hard brazing material interposed between them to a temperature of 450°C or higher, the CIP molded bodies 150A and 150B can be joined by the fluidized or molten hard brazing material. At this time, the heat joining is performed under a load of 0.001 MPa or more of surface pressure. The atmosphere can be selected as appropriate from air, inert gas, and vacuum. Examples of hard brazing materials that can be used include silver brazing (BAg-8, melting point 780°C), aluminum brazing (A4047, eutectic point 577°C), gold brazing (BAu-4, liquidus temperature 950°C), and nickel brazing (BNi-2, liquidus temperature 1000°C). These hard brazing materials may contain active metals such as Ti, Hf, and Zr. Metal foils such as Al foils can also be used as hard brazing materials. When joining two sintered bodies by hard brazing, it is preferable that the center line average roughness Ra of the joining surfaces before joining be 1.6 μm or less.

[0028] Two sintered bodies can be joined by soft soldering. Soft solder is a brazing material having a melting point (including liquidus temperature and glass transition temperature) below 450°C. By heating two sintered bodies with a soft solder material interposed between them to a temperature below 450°C, the two sintered bodies can be joined by the fluidized or molten soft solder material. At this time, the heat joining is performed under a load of 0.001 MPa or more. The atmosphere can be selected appropriately from air, inert gas, and vacuum. Examples of soft solder materials that can be used include In, Sn, Pb, and alloys (solder) thereof. When joining two sintered bodies by soft soldering, it is preferable that the centerline average roughness Ra of the joining surface before joining be 1.6 μm or less.

[0029] The method for joining two sintered bodies is not limited to the above-mentioned diffusion bonding, hard solder bonding, and soft solder bonding, and known anodic bonding, etc., can also be used. When two sintered bodies are joined using a bonding material such as a hard solder material or a soft solder material, the joining can be performed at a lower temperature than when joining by diffusion bonding, making production easier.

[0030] It should be noted that the grooves 131 do not necessarily have to be formed in the CIP molded body. For example, before firing the CIP molded body, a calcined body may be produced by calcining at a temperature lower than the firing temperature (for example, a temperature 500°C to 100°C lower than the firing temperature) (S201). The calcined body may then be subjected to an exterior shaping process to form the grooves 131 in the calcined body (S202). Alternatively, the grooves 131 may be formed in the CIP molded body, and after calcining the CIP molded body with the grooves 131 formed therein, additional processing may be performed on the calcined body so that the grooves 131 have the desired dimensions.

[0031] Next, another method for manufacturing the ceramic base 150 will be described with reference to the flowchart in Fig. 9. Below, a method for manufacturing the ceramic base 150 including short reinforcing fibers 320 as shown in Fig. 4 will be described. Note that short fibers refer to fibers having a length several times or more the ceramic particle diameter, and preferably have a length of 0.1 mm to 10 mm. Note that whiskers can be used in addition to or instead of the short reinforcing fibers 320.

[0032] First, granulated powder containing SiC as a component is prepared in the same manner as in the manufacturing method of the ceramic base 150 described above (S301). As described above, 4 wt% or less of sintering aids (B4C, C) and metal borides can be added to the SiC raw powder as needed. Furthermore, short reinforcing fibers and / or whiskers are mixed in. For example, short carbon fibers can be used as the short reinforcing fibers. Furthermore, SiC whiskers can be used as the whiskers.

[0033] Next, the granulated powder mixed with short reinforcing fibers and / or whiskers is placed in a carbon mold 601 (see FIG. 5(a)), pressed with a punch 602, and sintered in a N2 atmosphere (S302). The pressure applied during sintering is preferably 1 MPa or more. Sintering is also preferably performed at a temperature of 1800°C or more. This results in the formation of multiple sintered bodies. The resulting sintered bodies are then subjected to external shaping (S303). For example, as described above, a groove 131 that will become the flow path 130 is formed on the top surface of at least one sintered body, and multiple sintered bodies are then stacked and joined together to form a ceramic base 150 with the flow path 130 formed therein. The joining of the sintered bodies is as described above.

[0034] The ceramic substrate 110 and the ceramic base 150 thus fabricated can be joined using hard solder bonding, soft solder bonding, anodic bonding, or the like. For example, the above-described hard solder material can be used as the hard solder material. When joining the ceramic substrate 110 and the ceramic base 150 by hard solder bonding, it is preferable that the center line average roughness Ra of the joining surfaces before joining be 1.6 μm or less. For example, the above-described soft solder material can be used as the soft solder material. When joining the ceramic substrate 110 and the ceramic base 150 by soft solder bonding, it is preferable that the center line average roughness Ra of the joining surfaces before joining be 1.6 μm or less.

[0035] <Effects of the embodiment> In the above embodiment, the electrostatic chuck module 100 includes a plate-shaped ceramic base 110 and a plate-shaped ceramic base 150 joined to the lower surface 113 of the ceramic base 110 .

[0036] The ceramic base 150 is formed by bonding a plurality of composite materials, including a planar woven reinforcing fiber fabric 310 (see FIG. 2), to a matrix of SiC ceramic. Alternatively, the ceramic base 150 is formed by bonding a plurality of composite materials, including short reinforcing fibers 320 (see FIG. 4) and / or whiskers, to a matrix of SiC ceramic. Because the ceramic base 150 is formed by bonding a plurality of composite materials, including reinforcing fibers and / or whiskers, to a matrix of SiC ceramic, the ceramic base 150 has improved toughness and resistance to external forces compared to ceramic bases that do not contain reinforcing fibers and / or whiskers. According to the findings of the inventors, when the reinforcing fibers are carbon fibers or SiC fibers, the effect of improving the toughness and resistance to external forces of the ceramic base 150 is significant. This can prevent breakage of the ceramic base 150 even when an unintended external force is applied to the ceramic base 150, such as when the ceramic base 150 is dropped. Therefore, even if an impact is applied to the electrostatic chuck module 100 by an unintentional external force, the ceramic base 150 can be stably used. Furthermore, when the reinforcing fibers are carbon fibers or SiC fibers, there is no risk of impairing the physical properties (e.g., thermal conductivity, CTE, etc.) of the SiC ceramic.

[0037] In the above embodiment, the ceramic base 150 is a sintered body of ceramics containing SiC. As described above, the thermal conductivity of SiC ceramics is 70 W / mk or more, and SiC ceramics are highly resistant to water. Therefore, when the ceramic base 150 is a sintered body of ceramics containing SiC, water can be flowed as a cooling fluid through the flow path 130 formed inside. Water has a high heat transfer coefficient and is suitable for absorbing a large amount of heat.

[0038] In the above embodiment, the reinforcing fibers may be a woven fabric 310 woven in a flat pattern. The woven fabric 310 is preferably plain woven. The reinforcing fibers can be cut into any shape. This allows the reinforcing fiber fabric 310 to be placed in a desired location, thereby increasing the toughness of the ceramic base 150 at that location. For example, if a through-hole is formed in the ceramic base 150, the reinforcing fiber fabric 310 can be placed around the through-hole to increase the toughness of the weaker portion. Alternatively, as shown in FIG. 10 , the reinforcing fiber fabric 310 can be placed on the wall portion 132 (pillar portion) between the flow channels 130. Because cooling water flows inside the flow channels 130, the temperature distribution in a two-dimensional plane differs between the area directly above the flow channels 130 and the area directly above the wall portion 132 between the flow channels 130. The reinforcing fiber fabric 310 can have a higher thermal conductivity than ceramics, and therefore, by arranging the reinforcing fiber fabric 310 on the wall portion 132 of the flow path 130, it is possible to equalize the temperature distribution in a two-dimensional plane directly above the flow path 130 and directly above the wall portion 132 between the flow paths 130. Note that when arranging the reinforcing fiber fabric 310, it can be arranged so that it is parallel to the upper surface 151 of the ceramic base 150. In this case, the fabric 310 can be easily arranged when manufacturing the ceramic base 150.

[0039] In the above embodiment, the reinforcing fibers may be short fibers. As described above, short fibers refer to fibers having a length several times or more the diameter of the ceramic particles, and are preferably cut into lengths of 0.1 mm to 10 mm in the longitudinal direction. By using short fibers as the reinforcing fibers, the longitudinal directions of the reinforcing fibers are dispersed in random directions. This increases the degree of freedom in the directionality of the reinforcing fibers and can improve the toughness of the ceramic base 150. This makes it possible to suppress breakage of the ceramic base 150 even when the shape of the ceramic base 150 is complex.

[0040] <Modification form> The above-described embodiments are merely examples and may be modified as appropriate. In the above-described embodiments and modifications, the ceramic base 150 has a matrix of SiC, to which multiple composite materials including reinforcing fibers and / or whiskers are bonded. The present invention is not limited to this embodiment, and the ceramic base 150 may have a matrix of another ceramic, to which multiple composite materials including reinforcing fibers and / or whiskers are bonded. Furthermore, as described above, the ceramic substrate 110 does not necessarily have to be made of AlN ceramics, and may be another ceramic sintered body.

[0041] Furthermore, the shapes and thicknesses of the ceramic substrate 110 and the ceramic base 150 may be changed as appropriate. Furthermore, the planar shape and / or cross-sectional shape of the flow channel 130 formed inside the ceramic base 150 may be changed as appropriate.

[0042] In the above-described embodiment and modified embodiment, the ceramic base 110, which functions as an electrostatic chuck, is bonded to the upper surface 151 of the ceramic base 150. However, the present invention is not limited to such an embodiment. In the above-described electrostatic chuck module 100, the ceramic base 150 can be used as a ceramic susceptor for mounting a substrate holding member (electrostatic chuck) used in semiconductor manufacturing.

[0043] Although the present invention has been described above using embodiments and modifications thereof, the technical scope of the present invention is not limited to the scope of the above description. It will be apparent to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the claims that such modifications and improvements can also be included within the technical scope of the present invention.

[0044] The order of execution of each process in the manufacturing method shown in the specification and drawings is not particularly specified, and the processes may be executed in any order unless the output of a previous process is used in a subsequent process. For convenience, even if a description is made using "first," "next," etc., it does not mean that the processes must be executed in this order. [Explanation of symbols]

[0045] 100 Electrostatic Chuck Module 110 Ceramic substrate 124 Electrostatic Adsorption Electrode 130 flow path 150 Ceramic base 310 Reinforced fiber fabric 320 Short reinforced fibers

Claims

1. a plate-shaped ceramic substrate having a first main surface and a second main surface facing the first main surface in the up-down direction; a plate-shaped ceramic base having a third main surface joined to the second main surface of the ceramic base and having a flow path formed therein; The substrate holding member is characterized in that the ceramic base is formed by bonding a plurality of composite materials each having a ceramic matrix and including at least one of reinforcing fibers and whiskers.

2. 2. The substrate holding member according to claim 1, wherein the ceramic base is a sintered body of ceramic containing SiC.

3. 3. The substrate holder according to claim 1, wherein the reinforcing fibers are carbon fibers or SiC fibers.

4. 4. The substrate holder according to claim 3, wherein the reinforcing fibers are a woven fabric woven in a flat shape.

5. 5. The substrate holder according to claim 4, wherein the flat woven fabric is disposed parallel to the third main surface of the ceramic base.

6. 4. The substrate holder according to claim 3, wherein the reinforcing fibers are short fibers.

7. The substrate holder of claim 1 , wherein the plurality of composite materials are directly bonded together.

8. The substrate holder according to claim 1 , wherein a bonding layer is disposed at the bonding interface between the plurality of composite materials.

9. a plate-shaped ceramic base having a main surface on which a substrate holding member for semiconductor manufacturing is placed and having a flow path formed therein; The ceramic susceptor is characterized in that the ceramic base is formed by bonding a plurality of composite materials each having a ceramic matrix and including at least one of reinforcing fibers and whiskers.

Images