Plasma processing device

Abstract

To reduce a possibility that a leaking liquid enters a processing chamber when the liquid leaks from the interior of an antenna.SOLUTION: A plasma processing device (100) includes: an antenna (3) penetrating through a processing chamber housing (1) and including a plurality of antenna elements (30); a passage (32) which penetrates through the antenna elements along the antenna and in which cooling water (CL) flows; and a hollow first insulator (8) which is disposed along the antenna so as to cover an outer surface of the antenna and form a space (S) with the outer surface of the antenna and penetrates through the processing chamber housing in an air-tight manner.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] Examples of plasma processing apparatuses are disclosed in Patent Documents 1 and 2. Patent Document 1 discloses an antenna used in the plasma processing apparatus. The antenna in Patent Document 1 includes at least a pair of cylindrical conductor elements, a hollow insulator provided between adjacent conductor elements and communicating with the internal spaces of these conductor elements, and a metal seal provided between each pair of conductor elements and the hollow insulator. Patent Document 2 discloses a plasma processing apparatus including an antenna cooling flow path through which a coolant for cooling the antenna flows, and an antenna leakage sensor for detecting leakage of the coolant from the antenna cooling flow path. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-164896 [Patent Document 2] Patent Publication No. 2021-64450 Summary of the Invention [Problem to be solved by the invention]

[0004] In the antenna of Patent Document 1, a metal seal is provided between the conductor element and the insulator to reduce the possibility of the coolant flowing inside the antenna leaking from between the conductor element and the insulator, but the possibility of coolant leakage still exists to some extent. Furthermore, Patent Document 2 discloses a technology to reduce damage caused by coolant leakage from the antenna.

[0005] An object of one aspect of the present invention is to provide a plasma processing apparatus that can reduce the possibility of leaking liquid from inside an antenna entering a processing chamber. [Means for solving the problem]

[0006] In order to solve the above problems, a plasma processing apparatus according to one embodiment of the present invention comprises a processing chamber, an antenna having a plurality of antenna elements connected along an axis and penetrating a housing of the processing chamber, the antenna generating plasma in the processing chamber by passing a high-frequency current through it, a flow path through each of the plurality of antenna elements along the antenna and through which a fluid flows, and a hollow first insulator covering the outer surface of the antenna and arranged along the antenna so as to have a space between the outer surface of the antenna and hermetically penetrating the housing of the processing chamber. [Effects of the Invention]

[0007] According to one aspect of the present invention, when liquid leaks from inside the antenna, the possibility that the leaked liquid will enter the processing chamber can be reduced. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view showing a schematic cross section of a plasma processing apparatus according to an embodiment of the present invention. [Figure 2] 2 is a cross-sectional view showing a schematic cross section of the plasma processing apparatus shown in FIG. 1 when viewed from the axial direction of the antenna. [Figure 3] FIG. 10 is a cross-sectional view showing a schematic cross section of a plasma processing apparatus according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0009] [Embodiment 1] An embodiment of the present invention will be described in detail below with reference to Figures 1 and 2. Figure 1 is a cross-sectional view showing a schematic cross section of a plasma processing apparatus 100 according to an embodiment of the present disclosure. In Figure 1, the direction in which the antenna 3 extends is the X-axis direction, the direction from the holder 6 toward the antenna 3 is the Z-axis direction, and the direction perpendicular to both the X-axis direction and the Z-axis direction is the Y-axis direction. This also applies to the other figures.

[0010] The plasma processing apparatus 100 processes a substrate W using an inductively coupled plasma P. The substrate W is, for example, a glass substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL display, or a flexible substrate for a flexible display. The plasma processing apparatus 100 performs processes on the substrate W, such as film formation by a plasma CVD method or a sputtering method, plasma etching, ashing, or coating film removal.

[0011] 1, the plasma processing apparatus 100 includes a processing chamber housing 1, an outer housing 2, an antenna 3, a high-frequency power supply 4, vacuum exhaust devices 5A and 5B, a holder 6, an insulating member 7, a first insulator 8, and a second insulator 9. The plasma processing apparatus 100 also includes a circulation flow path 16, a pressure gauge 17, a valve 18, a gas introduction device (gas introduction section) 19, and a control device 60.

[0012] The processing chamber housing 1 is a housing that defines a processing chamber 10 (vacuum container) in which processing is performed on a substrate W. The processing chamber housing 1 is made of, for example, metal and is electrically grounded. The interior of the processing chamber housing 1 is connected to a vacuum exhaust device 5A, and the processing chamber 10 is evacuated (vacuum-exhausted) by the vacuum exhaust device 5A. A gas G1 is also introduced into the processing chamber 10. The gas G1 may be selected according to the processing content to be performed on the substrate W. Furthermore, a holder 6 that holds the substrate W is provided in the processing chamber 10.

[0013] The high frequency power supply 4 applies a high frequency to the antenna 3 to generate a plasma P inside the processing chamber 10. When the high frequency power supply 4 applies a high frequency to the antenna 3, a high frequency current IR flows through the antenna 3, an induced electric field is generated in the processing chamber 10, and a plasma P is generated.

[0014] A high-frequency power supply 4 is connected to a power feeding end 3a, which is one end of the antenna 3, via a matching circuit 41, and a termination end 3b, which is the other end of the antenna 3, is directly grounded. Note that the termination end 3b may be grounded via a capacitor, a coil, or the like. The high-frequency power supply 4 can pass a high-frequency current IR through the antenna 3 via the matching circuit 41. The frequency of the high-frequency current is, for example, a common 13.56 MHz, but is not limited to this.

[0015] The coolant CL flows through the inside of the antenna 3 via the circulation flow path 16. The coolant CL is an example of a fluid that flows through the inside of the circulation flow path 16. The circulation flow path 16 is provided with a temperature adjustment mechanism 161 and a circulation mechanism 162. The temperature adjustment mechanism 161 is a heat exchanger or the like for adjusting the coolant CL to a constant temperature. The circulation mechanism 162 is a pump or the like for circulating the coolant CL through the circulation flow path 16. From the viewpoint of electrical insulation, the coolant CL is preferably water with high resistance, for example, pure water or water close to pure water. Furthermore, a liquid refrigerant other than water, such as a fluorine-based inert liquid, may also be used as the coolant CL.

[0016] The antenna 3 emits electromagnetic waves for generating a plasma P in the processing chamber 10 by passing a high-frequency current IR. At least a portion of the antenna 3 is disposed inside the processing chamber housing 1. The antenna 3 is disposed substantially parallel to the surface of the substrate W in the processing chamber 10, along the surface of the substrate W on the positive side of the Z axis relative to the substrate W.

[0017] The antenna 3 includes a plurality of antenna elements 30 arranged along the axial direction of the antenna 3. The antenna elements 30 are conductors, and are made of materials such as copper, aluminum, alloys thereof, and stainless steel. In this embodiment, the antenna 3 is linear. In this case, the antenna 3 is easily manufactured. Furthermore, the antenna 3 can be removed from and attached to the processing chamber 10 simply by moving it linearly in the axial direction. This facilitates maintenance and replacement of the antenna 3. The antenna 3 may be linearly configured so that both ends of the antenna 3 penetrate the processing chamber housing 1 and the external housing 2, and may be curved, for example.

[0018] The antenna 3 further includes an insulating element 31 connected to two adjacent antenna elements 30. The insulating element 31 is made of a material such as alumina, fluororesin, or engineering plastics such as polyethylene (PE), polyphenylene sulfide (PPS), and polyether ether ketone (PEEK). In this embodiment, the antenna 3 is configured by alternately connecting multiple antenna elements 30 and multiple insulating elements 31. By connecting multiple antenna elements 30 via the insulating elements 31 in this manner, the antenna 3 can be made longer in the axial direction while reducing an increase in impedance compared to when multiple antenna elements 30 are connected without the insulating elements 31. The more insulating elements 31 the antenna 3 includes, the more effectively it can reduce an increase in impedance of the antenna 3 that may occur when the antenna 3 is made longer.

[0019] However, if an increase in impedance is not taken into consideration, two adjacent antenna elements 30 may be directly connected without the insulating element 31. Also, the insulating element 31 does not have to be connected entirely between two adjacent antenna elements 30, and the insulating element 31 may be connected only partially between the adjacent antenna elements 30.

[0020] The antenna 3 has a hollow structure. Circulation flow paths 16 are connected to both ends of the hollow portion of the antenna 3. Therefore, the hollow portion of the antenna 3 functions as a flow path 32 through which the cooling water CL flows. The flow path 32 penetrates each of the multiple antenna elements 30. In this embodiment, an insulating element 31 is disposed between two adjacent antenna elements 30. Therefore, the flow path 32 is disposed so as to penetrate the insulating element 31.

[0021] In order to reduce the possibility of cooling water CL leaking from the connection portion between the antenna element 30 and the insulating element 31, the connection portion is connected by a seal portion such as a metal seal or packing. Even when two adjacent antenna elements 30 are directly connected to each other without an insulating element 31 between them, the connection portion is connected by the above-mentioned seal portion.

[0022] The antenna 3 is disposed so as to penetrate through the processing chamber housing 1. Specifically, the antenna 3 is disposed so as to penetrate through each of two opposing side walls of the multiple side walls of the processing chamber housing 1, with both ends thereof extending to the outside of the processing chamber housing 1.

[0023] FIG. 2 is a cross-sectional view of the plasma processing apparatus 100 as viewed from the axial direction of the antenna 3. As shown in FIG. 2, the plasma processing apparatus 100 is provided with a plurality of antennas 3. Since the generation efficiency of plasma P improves in proportion to the number of antennas 3, the plasma processing apparatus 100 can increase the plasma generation efficiency by providing a plurality of antennas 3. In this embodiment, each of the plurality of antennas 3 is disposed substantially parallel to the substrate W. Also, each of the plurality of antennas 3 extends in the same direction. Furthermore, each of the plurality of antennas 3 is disposed in parallel at the same height from the substrate W. However, it is sufficient that the plurality of antennas 3 are disposed in the processing chamber 10 so that plasma P can be generated efficiently. Note that the plasma processing apparatus 100 may be configured to include only one antenna 3.

[0024] 1, a first insulator 8 is provided to cover the outer surface of the antenna 3. The material of the first insulator 8 may be, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon, or the like. The first insulator 8 is a hollow member disposed along the antenna 3 so as to leave a space S between it and the outer surface of the antenna 3. The first insulator 8 also airtightly penetrates the side wall of the processing chamber housing 1 through which the antenna 3 penetrates.

[0025] In this embodiment, insulating members 7 are provided at the respective portions of the processing chamber housing 1 through which both ends of the first insulator 8 penetrate. Both ends of the first insulator 8 penetrate each insulating member 7. A sealant 15 (e.g., packing) is provided between the insulating member 7 and the first insulator 8. In this manner, the gap between the first insulator 8, through which the antenna 3 penetrates, and the insulating member 7 is sealed, so that the first insulator 8 airtightly penetrates the side wall of the processing chamber housing 1. The insulating member 7 may be made of, for example, ceramics such as alumina, quartz, or engineering plastics such as polyphenylene sulfide (PPS) and polyether ether ketone (PEEK). A sealant 15 is also provided between the processing chamber housing 1 and the insulating member 7. Therefore, the gap between the processing chamber housing 1 and the insulating member 7 is also sealed.

[0026] As described above, the connection between the antenna element 30 and the insulating element 31, or the connection between two antenna elements 30, is sealed. However, the degree of sealing may decrease due to aging or other factors. If the degree of sealing at the connection decreases, cooling water CL may leak from the connection. As described above, the first insulator 8 is provided to cover the outer surface of the antenna 3, and a space S is formed between the first insulator 8 and the antenna 3. Therefore, if cooling water CL leaks from the connection, the leaked cooling water CL can be received by the first insulator 8. Furthermore, the first insulator 8 airtightly penetrates the processing chamber housing 1, and both ends of the first insulator 8 are located outside the processing chamber 10. This reduces the possibility that the cooling water CL received by the first insulator 8 will enter the processing chamber 10. Therefore, if cooling water CL leaks from the antenna 3, the possibility that the processing chamber 10 and the substrate W will be contaminated by the cooling water CL can be reduced.

[0027] Furthermore, by providing the first insulator 8, the antenna 3 can be protected. Furthermore, the amount of charged particles in the plasma P incident on the antenna 3 can be reduced. This reduces the increase in the plasma potential of the antenna 3 due to the incident of charged particles on the antenna 3, and also reduces the possibility that the antenna 3 will be sputtered by the charged particles, causing metal contamination on the substrate W. This effect can be achieved particularly when the second insulator 9 is not provided in the plasma processing apparatus 100.

[0028] In this embodiment, since the antenna 3 is linear, the first insulator 8 is also configured as a linear hollow member along the antenna 3. Therefore, similar to the antenna 3, the first insulator 8 can be easily manufactured. Furthermore, after removing the insulating member 7, the first insulator 8 can be removed from the processing chamber 10 simply by moving the first insulator 8 linearly in the axial direction. Furthermore, the first insulator 8 can be attached to the processing chamber 10 simply by moving it in this manner. Therefore, maintenance and replacement of the first insulator 8 are easy.

[0029] 2, in this embodiment, the plasma processing apparatus 100 includes a plurality of antennas 3, and a first insulator 8 is disposed for each of the plurality of antennas 3. This reduces the possibility of the cooling water CL entering the processing chamber 10, while improving the efficiency of generating the plasma P and the efficiency of processing the substrate W.

[0030] As shown in FIG. 1, a hollow second insulator 9 is disposed along the axis of the first insulator 8 in a processing chamber 10 so as to cover the outer surface of the first insulator 8. The material of the second insulator 9 may be, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon, or the like. The axial length of the second insulator 9 is shorter than the axial length of the first insulator 8. Therefore, the second insulator 9 is located inside the processing chamber housing 1. Both ends of the second insulator 9 are supported by insulating members 7. Furthermore, as shown in FIG. 2, in this embodiment, the second insulator 9 is disposed for each of the first insulators 8 disposed for each of the multiple antennas 3.

[0031] The provision of the second insulator 9 can protect the first insulator 8. Furthermore, the second insulator 9 can reduce an increase in the plasma potential of the antenna 3 due to incident charged particles on the antenna 3, and can also reduce the possibility that the antenna 3 will be sputtered by the charged particles, causing metal contamination on the substrate W.

[0032] In this embodiment, as shown in Fig. 2, the cross sections perpendicular to the axis of the antenna 3, the first insulator 8, and the second insulator 9 are circular. That is, the antenna 3, the first insulator 8, and the second insulator 9 are cylindrical. The cross sections perpendicular to the axis of the antenna 3, the first insulator 8, and the second insulator 9 are not limited to being circular and may be, for example, elliptical or rectangular. The antenna 3 may be configured to penetrate the flow path 32, the first insulator 8 may be configured to penetrate the antenna 3 so as to have a space S, and the second insulator 9 may be configured to penetrate the first insulator 8.

[0033] 1, two external housings 2 are provided outside the processing chamber housing 1. The external housings 2 surround both ends of a first insulator 8 that protrudes from the sidewall of the processing chamber housing 1, and each have both ends of an antenna 3 passing through them. The external housings 2 define a space 20 having an internal space in which the end of the first insulator 8 that extends to the outside of the processing chamber 10 is open. The external housings 2 are made of, for example, metal, and are electrically grounded by being connected to the processing chamber housing 1.

[0034] An end of the first insulator 8 is located in the space 20 and communicates with the space 20. Therefore, when the cooling water CL leaking from the antenna 3 and received by the first insulator 8 flows out from the end of the first insulator 8 into the space 20, the space 20 can receive the flowing cooling water CL. This reduces the possibility that the cooling water CL leaking from the antenna 3 will enter an internal space of the plasma processing apparatus 100 other than the space 20. Therefore, it reduces the possibility that the internal space of the plasma processing apparatus 100 will be contaminated by the cooling water CL leaking from the antenna 3. Furthermore, the external housing 2 can function as an electromagnetic shield that blocks high-frequency magnetic fields generated from a portion of the antenna 3 extending from the processing chamber housing 1 to the external housing 2.

[0035] In this embodiment, the inside of the outer housing 2 is connected to a vacuum exhaust device 5B, so that the space 20 is evacuated by the vacuum exhaust device 5B and functions as a vacuum chamber.

[0036] When the plasma processing apparatus 100 performs plasma processing on the substrate W, the processing chamber 10 is evacuated. Meanwhile, by evacuating the space 20, the space S between the antenna 3 and the first insulator 8 can also be evacuated. This reduces the pressure difference between the processing chamber 10 and the space S between the antenna 3 and the first insulator 8. The thickness of the first insulator 8 is designed to be large enough to withstand this pressure difference. Therefore, by reducing this pressure difference, the thickness of the first insulator 8 can be designed to be small.

[0037] Furthermore, since the thickness of the first insulator 8 can be designed to be small, it is possible to reduce the distance between the antenna 3 and the plasma region where the antenna 3 generates the plasma P. Therefore, even when the first insulator 8 is provided, it is possible to reduce the possibility that the generation efficiency of the plasma P will decrease.

[0038] A sealant 15 is provided at the connection portion between the processing chamber housing 1 and the external housing 2 and at the portion of the external housing 2 through which the antenna 3 penetrates. This improves the degree of sealing, making it possible to maintain the pressure (atmospheric pressure) in the space 20. Furthermore, since the portion of the external housing 2 through which the antenna 3 penetrates is sealed, the antenna 3 penetrates the side wall of the external housing 2 in an airtight manner.

[0039] The space 20 is connected to a pressure gauge 17 that measures the pressure in the space 20. The space 20 is also connected to a gas introduction device 19 via a valve 18. The gas introduction device 19 introduces the gas G2 into the space 20. The valve 18 adjusts the amount of gas G2 introduced into the space 20. By introducing the gas G2, it becomes easier to maintain the pressure in the space 20 constant. The gas G2 may be any gas that can easily maintain the pressure in the space 20 constant, and may be, for example, nitrogen, oxygen, air, or a rare gas such as argon.

[0040] The control device 60 comprehensively controls each part of the plasma processing apparatus 100. In this embodiment, the control device 60 is connected to the vacuum exhaust devices 5A and 5B, the pressure gauge 17, the valve 18, the gas introduction device 19, and the circulation mechanism 162. For example, the control device 60 controls the evacuation of the processing chamber 10 and the space 20 by the vacuum exhaust devices 5A and 5B. The control device 60 acquires the pressure value of the space 20 measured by the pressure gauge 17. The control device 60 adjusts the amount of gas G2 introduced into the space 20 by controlling the operation of the gas introduction device 19 and the opening and closing of the valve 18. The control device 60 may be connected to the temperature adjustment mechanism 161 and control the temperature adjustment mechanism 161. The control device 60 may be implemented by, for example, a personal computer.

[0041] In this embodiment, the control device 60 includes a detection unit 61 and a determination unit 62. The detection unit 61 detects the intrusion of the cooling water CL into the space 20 based on a change in the pressure in the space 20 measured by the pressure gauge 17.

[0042] The control device 60 can monitor the pressure in the space 20 by acquiring the pressure value in the space 20 after evacuation from the pressure gauge 17. When the space 20 is maintained in a vacuum state, the control device 60 can easily monitor pressure changes in the space 20. Therefore, when the cooling water CL flows into the space 20, the detection unit 61 can detect the increase in pressure in the space 20 due to the inflow of the cooling water CL, and can detect the intrusion of the cooling water CL into the space 20. Therefore, the detection unit 61 can detect leakage of the cooling water CL from the antenna 3 based on the result of the pressure measurement of the space 20 by the pressure gauge 17. Then, upon detection of leakage of the cooling water CL, the control device 60 can stop the supply of the cooling water CL or reduce the amount of water supply, thereby reducing further leakage of the cooling water CL after the detection of the leakage of the cooling water CL by the detection unit 61. The control device 60 may turn off the high-frequency power supply 4 to stop processing of the substrate W.

[0043] The judgment unit 62 judges what changes have occurred in the state of the first insulator 8 and its surroundings based on the change in pressure measured by the pressure gauge 17 when gas G2 is introduced into the evacuated space 20.

[0044] When the space 20 is evacuated, the pressure in the space 20 is maintained at a certain level. However, by introducing the gas G2 into the space 20, the pressure in the space 20 can be maintained at a higher level. When the gas G2 is filled in the entire space 20 and the pressure in the space 20 becomes constant, the value is, for example, 10 -2 The pressure in the space 20 can be maintained constant in this manner, and the determination unit 62 can determine, based on the change in pressure measured by the pressure gauge 17, what kind of change in state has occurred among various changes that can occur in the first insulator 8 and its surroundings.

[0045] The pressure values ​​of the processing chamber 10 and the space 20 after evacuation are preset, and the control device 60 determines the evacuation speed of the vacuum exhaust devices 5A and 5B when evacuation is performed so as to achieve the preset pressure value. This pressure value is set to fall within a range of pressure values ​​defined as, for example, low vacuum, medium vacuum, high vacuum, or ultra-high vacuum. The amount of gas G2 introduced into the space 20 is set according to the value set as the pressure value of the space 20 after evacuation. By introducing an amount of gas G2 into the space 20 corresponding to the pressure value of the space 20 after evacuation, the control device 60 can set the pressure value of the space 20 after introduction of gas G2 to a constant value regardless of the set pressure value. This makes it easier for the determination unit 62 to determine the above-mentioned condition.

[0046] It is also possible to adjust the pressure value of the space 20 to the same pressure value as when the gas G2 is introduced by adjusting the exhaust speed of the vacuum exhaust device 5B. However, introducing the gas G2 makes it easier to maintain the pressure of the space 20 constant than by adjusting the exhaust speed.

[0047] Changes in the state of the first insulator 8 and its surroundings that are the subject of judgment by the judgment unit 62 include, for example, breakage of the first insulator 8, leakage of the cooling water CL from the antenna 3, and generation of outgassing. Outgassing refers to a phenomenon in which gas or the like adhering to the outer surface of the second insulator 9 is released into the processing chamber 10 due to, for example, a temperature rise of the second insulator 9. In addition, outgassing refers to a phenomenon in which gas or the like adhering to the inner surface of the first insulator 8 is released into the inside of the first insulator 8 or from the inside of the first insulator 8 to the outside (in this embodiment, the space 20) due to, for example, a temperature rise of the first insulator 8.

[0048] The change in pressure in the space 20 over time varies depending on the type of change in the above conditions, such as damage to the first insulator 8, leakage of the cooling water CL from the antenna 3, and generation of outgassing. For example, if the first insulator 8 is damaged, the pressure in the space 20 rises or falls sharply. If the pressure in the processing chamber 10 is greater than the pressure in the space 20, the pressure in the space 20 rises sharply, whereas if the pressure in the processing chamber 10 is less than the pressure in the space 20, the pressure in the space 20 falls sharply. Furthermore, for example, if outgassing occurs, the pressure in the space 20 rises slowly. When the temperature of the second insulator 9 rises, the temperature of the first insulator 8 often also rises. Therefore, outgassing occurs from the inner surface of the first insulator 8, and the pressure in the space 20 rises slowly. Furthermore, for example, if the cooling water CL leaks from the antenna 3, the pressure in the space 20 will change between the pressure change over time that occurs when the first insulator 8 is damaged and the pressure change over time that occurs when outgassing occurs. Therefore, the determination unit 62 can determine what kind of change in state has occurred by monitoring the pressure change over time in the space 20.

[0049] For example, threshold values ​​for the pressure in the space 20 are set for each type of change in the state. For example, for the damage to the first insulator 8, a first threshold value is set to, for example, 10 Pa to 10 kPa. For the leakage of the cooling water CL from the antenna 3, a second threshold value is set to, for example, 1 Pa to 1 kPa. For the generation of outgassing, a third threshold value is set to, for example, 10 -1 The first threshold value is set to a value between 1 Pa and 100 Pa. The first threshold value is set to an appropriate value depending on the magnitude relationship between the pressure in the processing chamber 10 and the pressure in the space portion 20.

[0050] For example, in a situation where the pressure in the processing chamber 10 is greater than the pressure in the space 20, the determination unit 62 determines that damage has occurred in the first insulator 8 if the pressure value measured by the pressure gauge 17 becomes equal to or greater than the first threshold value within a unit time after measuring a pressure value greater than the certain value. The unit time is set to, for example, several seconds to several tens of seconds. On the other hand, in a situation where the pressure in the processing chamber 10 is lower than the pressure in the space 20, the determination unit 62 determines that damage has occurred in the first insulator 8 if the pressure value measured by the pressure gauge 17 becomes equal to or less than the first threshold value within a unit time after measuring a pressure value smaller than the certain value.

[0051] Furthermore, if the pressure value measured by the pressure gauge 17 becomes equal to or greater than a second threshold value within a unit time after measuring a pressure value greater than the certain value, the determination unit 62 determines that the cooling water CL has leaked from the antenna 3. If the pressure value measured by the pressure gauge 17 becomes equal to or greater than a third threshold value within a unit time after measuring a pressure value greater than the certain value, the determination unit 62 determines that outgassing has occurred.

[0052] Furthermore, for example, the determination unit 62 may determine what kind of change in state has occurred based on the time it takes for the pressure value measured by the pressure gauge 17 to reach a predetermined value after measuring a pressure value greater than (or less than) the certain value. For example, a first time period is set at which damage to the first insulator 8 can be determined, and a second time period (>first time period) is set at which leakage of the cooling water CL from the antenna 3 can be determined. A third time period (>second time period) can be set at which generation of outgassing can be determined. The predetermined value and the time period serving as the determination criterion may be set to values ​​that allow the determination unit 62 to determine that a change in state has occurred when any of the changes in state has occurred.

[0053] For example, if the pressure value measured by the pressure gauge 17 reaches a predetermined value within a first time, the determination unit 62 determines that damage has occurred in the first insulator 8. If the pressure value measured by the pressure gauge 17 reaches a predetermined value within a second time that exceeds the first time, the determination unit 62 determines that cooling water CL has leaked from the antenna 3. If the pressure value measured by the pressure gauge 17 reaches a predetermined value within a second time that exceeds the first time, the determination unit 62 determines that outgassing has occurred.

[0054] In the above description, the plasma processing apparatus 100 includes an outer housing 2, but this is not a requirement. However, by including the outer housing 2 and defining the space 20, the cooling water CL leaking from the antenna 3 can be contained in the space 20, and leakage of the cooling water CL from the antenna 3 due to pressure changes, etc. can be detected. Furthermore, the plasma processing apparatus 100 includes a pressure gauge 17, but this is not a requirement. However, if the plasma processing apparatus 100 includes the pressure gauge 17, leakage of the cooling water CL from the antenna 3, etc. can be detected. Furthermore, the plasma processing apparatus 100 includes a valve 18 and a gas introduction device 19, but this is not a requirement. However, if the valve 18 and the gas introduction device 19 are included, the pressure in the space 20 can be maintained constant with high precision.

[0055] [Embodiment 2] Another embodiment of the present invention will be described below with reference to Fig. 3. For ease of explanation, members having the same functions as those described in the first embodiment will be denoted by the same reference numerals, and their description will not be repeated.

[0056] 3 is a schematic cross-sectional view of a plasma processing apparatus 100A according to another embodiment of the present invention. The plasma processing apparatus 100A includes an external housing 2A and a control device 60 instead of the external housing 2 and control device 60 of the plasma processing apparatus 100. Unlike the plasma processing apparatus 100, the plasma processing apparatus 100A does not include a pressure gauge 17, a valve 18, or a gas introduction device 19.

[0057] The outer casing 2A, like the outer casing 2, is provided outside the processing chamber casing 1 and defines a space 20A in which the end of the first insulator 8 that extends to the outside of the processing chamber 10 is open. The outer casing 2A has an opening 51 that communicates with the outside of the outer casing 2A. In other words, the space 20A is not connected to the vacuum exhaust device 5B and is open to the atmosphere through the opening 51.

[0058] In a plasma processing apparatus not including the first insulator 8, maintenance and replacement of the antenna 3 require the processing chamber 10 to be opened to the atmosphere. In the plasma processing apparatus 100A, the space 20A spatially separated from the processing chamber 10 is open to the atmosphere, so that the antenna 3 can be removed from or attached to the processing chamber 10 without opening the vacuum-state processing chamber 10 to the atmosphere. Therefore, maintenance and replacement of the antenna 3 can be performed without opening the vacuum-state processing chamber 10 to the atmosphere, thereby reducing downtime.

[0059] Since plasma processing apparatus 100A does not include pressure gauge 17, valve 18, and gas introduction device 19, control device 60A functions to control the other components. That is, control device 60A does not include detection unit 61 and determination unit 62. However, when processing is performed by detection unit 61 and determination unit 62 while space 20A is open to the atmosphere, plasma processing apparatus 100A may include pressure gauge 17, valve 18, gas introduction device 19, and control device 60.

[0060] In the plasma processing apparatus 100, the space 20 can be left open to the atmosphere without being evacuated. In this case, even in the plasma processing apparatus 100, maintenance and replacement of the antenna 3 can be performed without opening the vacuum processing chamber 10 to the atmosphere. However, if the space 20 is opened to the atmosphere, it may be difficult to detect leakage of the cooling water CL from the antenna 3 by measuring the pressure in the space 20 with the pressure gauge 17. For this reason, it is preferable to evacuate the space 20 in the plasma processing apparatus 100.

[0061] [Software implementation example] The functions of the plasma processing apparatus 100 (hereinafter referred to as the "apparatus") can be realized by a program that causes a computer to function as the apparatus, and a program that causes a computer to function as each control block of the apparatus (particularly each part included in the control device 60).

[0062] In this case, the device includes a computer having at least one control device (e.g., a processor) and at least one storage device (e.g., a memory) as hardware for executing the program. The control device and storage device execute the program, thereby realizing the functions described in each of the above embodiments.

[0063] The program may be non-transitory and may be recorded on one or more computer-readable recording media. The recording media may or may not be included in the device. In the latter case, the program may be supplied to the device via any wired or wireless transmission medium.

[0064] Furthermore, some or all of the functions of the control blocks can be realized by logic circuits. For example, an integrated circuit in which a logic circuit that functions as each of the control blocks is formed is also included in the scope of the present invention. In addition, the functions of the control blocks can also be realized by, for example, a quantum computer.

[0065] Furthermore, each process described in each of the above embodiments may be executed by AI (Artificial Intelligence). In this case, the AI ​​may run on the control device or on another device (for example, an edge computer or a cloud server).

[0066] 〔summary〕 A plasma processing apparatus according to a first aspect of the present disclosure includes a processing chamber, an antenna having a plurality of antenna elements connected along an axis and penetrating a housing of the processing chamber, the antenna generating plasma in the processing chamber by passing a high-frequency current through the antenna, a flow path through each of the plurality of antenna elements along the antenna for fluid flow, and a hollow first insulator covering the outer surface of the antenna and arranged along the antenna so as to have a space between the outer surface of the antenna and hermetically penetrating the housing of the processing chamber.

[0067] A plasma processing apparatus according to a second aspect of the present disclosure is the plasma processing apparatus of the first aspect, further comprising a space portion having an internal space in which an end portion of the first insulator extending to the outside of the processing chamber is open.

[0068] A plasma processing apparatus according to a third aspect of the present disclosure is the apparatus of the second aspect, wherein the internal space is evacuated to a vacuum.

[0069] A plasma processing apparatus according to a fourth aspect of the present disclosure is the plasma processing apparatus of the second aspect, wherein the internal space is open to the atmosphere.

[0070] A plasma processing apparatus according to aspect 5 of the present disclosure is any one of aspects 1 to 4, further comprising a second insulator arranged along the axis of the first insulator so as to cover the outer surface of the first insulator in the processing chamber.

[0071] A plasma processing apparatus according to a sixth aspect of the present disclosure is any one of the first to fifth aspects, wherein the antenna includes an insulating element connected to two adjacent antenna elements and through which the flow path passes.

[0072] A plasma processing apparatus according to a seventh aspect of the present disclosure is any one of the first to sixth aspects, further comprising a plurality of the antennas, and the first insulator is disposed for each of the plurality of antennas.

[0073] A plasma processing apparatus according to an eighth aspect of the present disclosure is any one of the first to seventh aspects, wherein the antenna is linear.

[0074] A plasma processing apparatus according to aspect 9 of the present disclosure is, in accordance with aspect 3, provided with a pressure gauge that measures the pressure in the internal space and a detection unit that detects the ingress of a fluid into the internal space based on changes in the pressure measured by the pressure gauge.

[0075] A plasma processing apparatus according to aspect 10 of the present disclosure is, in accordance with aspect 3, provided with a pressure gauge for measuring the pressure in the internal space, a gas introduction unit for introducing gas into the internal space, and a determination unit for determining what changes have occurred in the state of the first insulator and its surroundings based on changes in pressure measured by the pressure gauge when the gas is introduced into the internal space.

[0076] [Additional Notes] The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present invention. [Explanation of symbols]

[0077] 1 Processing chamber housing (processing chamber housing) 3 Antennas 8 First Insulator 9 Second insulator 10 Processing Room 17 Pressure gauge 19 Gas introduction device (gas introduction section) 20, 20A space section 30 antenna elements 31 Isolation element 32 Flow path 61 Detector 62 Judgment section 100, 100A plasma processing equipment CL Cooling water (fluid) IR high frequency current P plasma S space

Claims

1. A processing chamber; an antenna having a plurality of antenna elements connected along an axis, the antenna penetrating a housing of the processing chamber, the antenna passing a high frequency current through the antenna to generate plasma in the processing chamber; a fluid flow path extending along the antenna and through each of the plurality of antenna elements; a hollow first insulator that covers an outer surface of the antenna, is arranged along the antenna so as to have a space between it and the outer surface of the antenna, and airtightly penetrates a housing of the processing chamber.

2. The plasma processing apparatus according to claim 1 , wherein the first insulator has an end portion extending to the outside of the processing chamber, the end portion being an open space having an internal space.

3. The plasma processing apparatus according to claim 2 , wherein the internal space is evacuated to a vacuum.

4. The plasma processing apparatus according to claim 2 , wherein the internal space is open to the atmosphere.

5. The plasma processing apparatus according to claim 1 , further comprising: a second insulator disposed along an axis of the first insulator so as to cover an outer surface of the first insulator in the processing chamber.

6. The plasma processing apparatus according to claim 1 , wherein the antenna comprises an insulating element connected to two adjacent antenna elements and through which the flow path passes.

7. A plurality of the antennas are provided, The plasma processing apparatus according to claim 1 , wherein the first insulator is disposed for each of the plurality of antennas.

8. The plasma processing apparatus according to claim 1 , wherein the antenna is linear.

9. a pressure gauge for measuring the pressure in the internal space; The plasma processing apparatus according to claim 3 , further comprising: a detection unit that detects the intrusion of a fluid into the internal space based on a change in pressure measured by the pressure gauge.

10. a pressure gauge for measuring the pressure in the internal space; a gas inlet portion that introduces a gas into the internal space; 4. The plasma processing apparatus according to claim 3, further comprising: a determination unit that determines what change has occurred in the state of the first insulator and its surroundings based on a change in pressure measured by the pressure gauge while the gas is introduced into the internal space.

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