Substrate mounting table, substrate processing apparatus, and method for manufacturing substrate mounting table

Abstract

To suppress the occurrence of cracks and peeling of a coating film on a substrate mounting table even when processing a substrate placed on a substrate mounting table at temperatures of -20°C or lower.SOLUTION: A substrate mounting table is placed in a chamber of a substrate processing apparatus and is cooled to -20°C or below when processing is performed on a substrate placed thereon. The substrate mounting table includes a base having a flat upper surface and a coating film covering at least the upper surface of the base, the base being made of an aluminum alloy containing silicon, the coating film being a sprayed film formed by thermal spraying on the upper surface, and the sprayed film being formed while maintaining the surface temperature of the upper surface at the lower limit temperature possible for the thermal spraying.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate mounting table, a substrate processing apparatus, and a method for manufacturing a substrate mounting table. [Background technology]

[0002] In the manufacturing process of FPDs (flat panel displays), plasma processing such as dry etching, sputtering, and CVD (Chemical Vapor Deposition) is performed on a glass substrate, which is the object to be processed. For plasma processing, a substrate processing apparatus is used, which includes a chamber and a substrate mounting table disposed within the chamber and on which a glass substrate is mounted (see, for example, Patent Document 1). The substrate mounting table of the substrate processing apparatus described in Patent Document 1 is composed of an aluminum base and an insulating layer covering the surface of the base. An electrode is embedded in the insulating layer, and when the glass substrate is mounted on the substrate mounting table, the electrode to which a DC voltage is applied can electrostatically attract the glass substrate on the insulating layer. Then, the glass substrate in this electrostatically attracted state is subjected to plasma processing. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-66707 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure prevents cracks and peeling of the coating film on the substrate mounting table even when processing a substrate on the substrate mounting table at temperatures of -20°C or lower. [Means for solving the problem]

[0005] One aspect of the technology disclosed herein is a substrate support table that is placed in a chamber of a substrate processing apparatus and cooled to -20°C or below when processing is performed on a substrate placed thereon, the substrate support table comprising a base having a flat upper surface and a coating film covering at least the upper surface of the base, the base being made of an aluminum alloy containing silicon, the coating film being a sprayed film formed by thermal spraying on the upper surface, and the sprayed film being formed while maintaining the surface temperature of the upper surface at the lowest temperature possible for the thermal spraying. [Effects of the Invention]

[0006] According to the present disclosure, even when a substrate placed on a substrate mounting table is processed at temperatures of −20° C. or lower, the occurrence of cracks and peeling of a coating film on the substrate mounting table is suppressed. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a vertical cross-sectional view showing an example of a schematic configuration of a substrate processing apparatus. [Figure 2] 4 is a graph showing an example of the change over time in the surface temperature of the second substrate during the formation of a thermal sprayed film. DETAILED DESCRIPTION OF THE INVENTION

[0008] In organic EL displays, copper, which has low resistance, is required as a wiring material to achieve faster and higher density signals. However, the etching rate of copper can be improved by lowering the temperature of the glass substrate. Therefore, dry etching of the glass substrate at the lowest possible temperature, for example, at or below -20°C, is being considered. At this time, the substrate mounting table is also cooled to -20°C or below.

[0009] However, in the substrate support table of Patent Document 1 mentioned above, the compressive stress of the insulating layer caused by the difference between the linear expansion coefficient of the insulating layer and the linear expansion coefficient of the base increases as the substrate support table cools, which may cause cracks or peeling of the insulating layer.

[0010] In contrast, the technique according to the present disclosure prevents cracks and peeling of the coating film on the substrate mounting table even when processing the substrate on the substrate mounting table at temperatures of -20°C or lower.

[0011] Hereinafter, an embodiment of the technology according to the present disclosure will be described with reference to the drawings. However, the configurations described in the following embodiments are merely examples and are not intended to be limiting. For example, each component included in this configuration can be replaced with any component that can perform the same function. Furthermore, any component may be added.

[0012] FIG. 1 is a vertical cross-sectional view showing an example of a schematic configuration of a substrate processing apparatus according to a first embodiment. The substrate processing apparatus 1 shown in FIG. 1 is an apparatus for processing a rectangular, flat-plate-shaped object to be processed. In this embodiment, the substrate processing apparatus 1 is a plasma etching apparatus that etches a copper layer formed on a rectangular substrate G, such as a glass substrate for an FPD. Examples of FPDs include, but are not limited to, organic electroluminescence (EL) displays and liquid crystal displays (LCDs). The substrate processing apparatus 1 includes a processing chamber 2, a substrate mounting table 3, a coolant supply unit 12, a DC power supply 14, an exhaust system 15, a heat transfer gas supply unit 69, and a lifting pin lifting device 70. Furthermore, the substrate processing apparatus 1 includes a processing gas supply system that supplies processing gas to the inside of the processing chamber 2, which includes a shower head (not shown) and a processing gas supply unit (not shown). The processing chamber 2 is made of aluminum. The processing chamber 2 is shaped like a rectangular cylinder, and its inner surface is anodized (anodized). A sidewall of the processing chamber 2 is provided with a loading / unloading port 21 for loading / unloading a substrate G into / from the processing chamber 2, and a gate valve 22 for opening / closing the loading / unloading port 21. An exhaust system 15 is also connected to the processing chamber 2. The exhaust system 15 can evacuate the processing chamber 2 and reduce the pressure inside the processing chamber 2 to a predetermined pressure. A substrate mounting table 3 is disposed at the bottom of the processing chamber 2. A substrate G is mounted on the substrate mounting table 3. The configuration of the substrate mounting table 3 will be described later.

[0013] In the substrate processing apparatus 1, the substrate on which the formed copper layer is etched is not limited to a glass substrate, but may be, for example, a disk-shaped semiconductor wafer. In this case, the processing chamber 2 has a cylindrical shape.

[0014] A dielectric wall 4 and a shower head, which also serves as a support beam for supporting the dielectric wall 4, are disposed on the ceiling of the processing chamber 2, facing the substrate mounting table 3. The shower head has a gas diffusion chamber (not shown) formed therein and multiple supply ports (not shown) for supplying processing gas from the gas diffusion chamber into the processing chamber 2. A processing gas supply unit is connected to the shower head via piping. The processing gas supply unit supplies processing gas for the etching process to the shower head. As a result, the processing gas is supplied into the processing chamber 2 from each supply port. The processing gas is not particularly limited, and examples thereof include halogen-based gases (HCl, BCl3, Cl2, etc.), oxygen (O2), hydrogen gas, and rare gases. An inductively coupled antenna 50 is disposed above the dielectric wall 4, facing the substrate mounting table 3 across the dielectric wall 4. A high-frequency power source 41 is connected to the inductively coupled antenna 50 via a matching box 42. A high-frequency electric field is formed in the processing chamber 2 by supplying high-frequency power from the high-frequency power source 41 to the inductively coupled antenna 50 via the matching box 42. This electric field excites the processing gas supplied into the processing chamber 2, generating inductively coupled plasma. A high-frequency power supply 81 is connected to the substrate mounting table 3 via a matching box 82, and high-frequency power for bias generation is supplied from the high-frequency power supply 81 to the substrate mounting table 3, thereby forming a bias on the substrate mounting table and attracting ions from the plasma to the substrate G. The substrate G is then etched using this plasma. During the etching process, a predetermined DC voltage is applied from the DC power supply 14 to an electrode 8 of the substrate mounting table 3, which will be described later. This electrostatically attracts the substrate G due to Coulomb force, thereby enabling stable etching of the substrate G. The method for generating plasma is not limited to the inductively coupled type, and other plasma generation methods such as capacitively coupled type and microwave plasma may also be used.

[0015] The substrate support table 3 is connected to a coolant supply unit 12 via pipes 121 and 122. The coolant supply unit 12 can supply a coolant R that cools the substrate support table 3. In this embodiment, the coolant R is supplied from the coolant supply unit 12, passes through the pipe 121, the substrate support table 3, and the pipe 122, in this order, and returns to the coolant supply unit 12. That is, the coolant R circulates between the coolant supply unit 12 and the substrate support table 3 via the pipes 121 and 122. When etching a substrate G on the substrate support table 3, the coolant R passing through the substrate support table 3 can cool the substrate support table 3 to a predetermined temperature. The coolant R is not particularly limited, and may be, for example, a fluorine-based liquid. The substrate support table 3 is configured so that a heat transfer gas, such as He gas, can be supplied from a supply unit 69, passed through a supply groove 67 in the first base member 5 (described later), and then supplied to the backside of the substrate G from a gas hole 65. This allows the substrate G to be maintained at a predetermined temperature by adjusting the temperature of the substrate mounting table 3. The substrate mounting table 3 is also provided with a plurality of lift pin holes 66 and lift pins (not shown) that are movable in the vertical direction. Each lift pin is driven by a lift device 70 and lifts the substrate G by supporting the substrate G from its backside at the upper position. After the etching process, the lifted substrate G is then carried out of the processing chamber 2 by a transport arm (not shown). Before the etching process, each lift pin waits at the upper position to receive the substrate G from the transport arm, and then moves to the lower position to place the substrate G on the substrate mounting table 3.

[0016] As shown in FIG. 1, the substrate mounting table 3 includes a plate-shaped or block-shaped first base material 5, a base 9 made of an insulating material supporting the first base material 5, a plate-shaped or block-shaped second base material (base material) 6 disposed on the first base material 5, a coating film 7 covering the second base material 6, and an electrode 8 embedded in the coating film 7. The second base material is also covered with an insulating member 68. The base 9 is a frame-shaped member having an opening. In FIG. 1, a high-frequency power supply 81 is connected to the second base material 6, but the high-frequency power supply 81 may be connected to the first base material 5. As described above, the substrate processing apparatus 1 etches a copper layer formed on a substrate G, such as a glass substrate for FPD. This etching forms a copper wiring pattern on the substrate G. The substrate processing apparatus 1 also improves the copper etching rate by lowering the temperature of the substrate G. For example, the substrate processing apparatus 1 performs dry etching on the substrate G in a temperature environment of −20° C. or lower. During this etching, the substrate support 3 is preferably cooled to -20°C or below, and more preferably to -50°C or above and -20°C or below. However, as the substrate support 3 is cooled, the compressive stress of the coating film 7 increases due to the difference between the linear expansion coefficient of the second base 6 and the linear expansion coefficient of the coating film 7, which may cause cracks or peeling in the coating film 7. Therefore, the substrate support 3 is configured to prevent cracks and peeling in the coating film 7. The configuration and operation of this configuration are described below.

[0017] The first base material 5 is made of an aluminum alloy containing magnesium. The aluminum alloy that makes up the first base material 5 is not particularly limited, and it is preferable to use, for example, A5052 that has been anodized.

[0018] The second substrate 6 has a horizontal, planar upper surface 61. The substrate G is placed on the upper surface 61 via a coating film 7. A flange portion 62 having a reduced thickness compared to the central portion is formed at the edge of the second substrate 6. A side surface 64 is formed between the upper surface 61 and the flange portion 62, surrounding the upper surface 61 and connecting the upper surface 61 and the flange portion 62. The second substrate 6 is made of an aluminum alloy containing silicon. The aluminum alloy used for the second substrate 6 is preferably an alloy conforming to JISH4000, which has a high silicon content. For example, an alloy selected from the group consisting of A4032, A4047, and A4045 is more preferable. An anodized coating 63 is formed on the second substrate 6. That is, the second substrate 6 is anodized. The anodized coating 63 is a coating film that covers the upper surface 61, the side surface 64, and the flange portion 62 of the second substrate 6. The anodic oxide coating 63 has excellent corrosion resistance against halogen gas. Furthermore, the anodic oxide coating 63 is interposed between the second substrate 6 and the coating film 7. As a result, even if, for example, the coating film 7 peels off and the anodic oxide coating 63 is exposed inside the processing chamber 2 or the gas holes 65 or the lift pin holes 66 are exposed, the anodic oxide coating 63 can protect the top surface 61, side surfaces 64, and flange portion 62 of the second substrate 6. Note that the anodic oxide coating 63 is not limited to covering the top surface 61, side surfaces 64, flange portion 62, gas holes 65, and pin holes 66 of the second substrate 6, as long as it covers at least the inner surfaces of the gas holes 65 and pin holes 66.

[0019] The substrate G is placed on the coating film 7 in a portion that covers the upper surface 61 of the second base material 6. Like the anodic oxide coating 63, the coating film 7 is not limited to covering the upper surface 61, side surface 64, and flange portion 62 of the second base material 6, but only needs to cover at least the upper surface 61. The coating film 7 is insulating and has an electrode 8 embedded therein. The electrode 8 is made of tungsten and is electrically connected to a DC power supply 14. A predetermined DC voltage is applied from the DC power supply 14 to the electrode 8, electrostatically attracting the substrate G on the coating film 7 by Coulomb force. In this embodiment, the second base material 6, the coating film 7, and the electrode 8 constitute an electrostatic chuck 10 that electrostatically attracts the substrate G.

[0020] To form the coating film 7 on the upper surface 61, the side surface 64, and the flange portion 62 (anodized coating 63) of the second substrate 6, first, in the manufacturing process of the substrate mounting table 3 (the manufacturing method of the substrate mounting table), the constituent material for the coating film 7 is sprayed in a semi-molten state onto the second substrate 6 by a known method. This results in a sprayed film. The sprayed film is formed while circulating a coolant R. This cools and solidifies the sprayed film, forming the coating film 7. The sprayed film is formed while the coolant R maintains the surface temperature of the second substrate 6 at the lowest temperature at which the constituent material for the coating film 7 can be sprayed (hereinafter referred to as the "lower limit spraying temperature"). The lower limit spraying temperature is the temperature below which it becomes difficult for the semi-molten constituent material for the coating film 7 to form a sprayed film on the substrate. Therefore, in this embodiment, the coating film 7 is formed by spraying at as low a temperature as possible.

[0021] The constituent material of the coating film 7 is not particularly limited, and examples thereof include aluminum oxide, yttrium oxide, or a compound containing yttrium oxide, silicon oxide, and aluminum oxide. When aluminum oxide is used as the constituent material of the coating film 7, the lower limit temperature for thermal spraying is preferably 50±10°C, and more preferably 50±5°C. When yttrium oxide or a compound containing yttrium oxide, silicon oxide, and aluminum oxide is used as the constituent material of the coating film 7, the lower limit temperature for thermal spraying is preferably 70±10°C, and more preferably 70±5°C.

[0022] When the coating film 7 is formed by thermal spraying at the lowest possible temperature in this way, the compressive stress σ of the coating film 7 that occurs when the substrate G is subjected to an etching process (hereinafter referred to as "compressive stress during processing") can be reduced. Specifically, the compressive stress σ during processing can be set to -131.5 MPa or more (meaning an absolute value of 131.5 MPa or less; the same applies hereinafter), preferably -120 MPa or more, and more preferably -115 MPa or more. The compressive stress σ during processing is expressed by the following formula (1): σ=E×ΔT×(αs-αf) (1)

[0023] Here, E is the Young's modulus of the coating film 7. ΔT is the difference between the lower limit of the temperature range during the etching process and the temperature when the constituent material of the coating film 7 is thermally sprayed. αs is the linear expansion coefficient of the second substrate 6. αf is the linear expansion coefficient of the coating film 7. For example, when the coating film 7 is made of aluminum oxide, the Young's modulus E of the coating film 7 is 95 [GPa], and the linear expansion coefficient αf of the coating film 7 is 6.4 [×10 -6 / °C]. It should be noted that when the coating film 7 is made of yttrium oxide or a compound containing yttrium oxide, silicon oxide, and aluminum oxide, the Young's modulus E and the linear expansion coefficient αf vary depending on various conditions such as the composition of the coating film 7, and therefore will not be described here. As mentioned above, it is more preferable to use any one of A4032, A4047, and A4045 as the aluminum alloy constituting the second substrate 6. When A4032 is used for the second substrate 6, the linear expansion coefficient αs of the second substrate 6 is 18.4 [×10 -6 / °C], and when A4047 was used, it was 18.2 [× 10 -6 / °C], and when A4045 is used, it is 20.3 [× 10 -6 / ℃].

[0024] In the substrate support table 3, the difference between the linear expansion coefficient αs of the second substrate 6 and the linear expansion coefficient αf of the coating film 7, "αs - αf," is made relatively small by selecting the aforementioned materials for the second substrate 6 and the coating film 7. Furthermore, by keeping the temperature as low as possible when thermally spraying the coating film 7 material, as described above, ΔT is also made relatively small. Furthermore, if "αs - αf" and ΔT are relatively small, the compressive stress σ during processing also becomes small. In other words, it can be seen from equation (1) that the compressive stress σ during processing is reduced. By reducing the compressive stress σ during processing in this way, it is possible to suppress cracking and peeling of the coating film 7.

[0025] The thickness of the coating film 7 on the upper surface 61 of the second substrate 6 is preferably, for example, 500 μm to 1000 μm, more preferably 550 μm to 950 μm. The thickness of the coating film 7 on the side surface 64 and flange portion 62 of the second substrate is preferably 100 μm to 500 μm, more preferably 200 μm to 400 μm. Such a thickness of the coating film 7 structurally alleviates stress acting on the coating film 7, which, combined with the reduction in compressive stress σ during processing, more reliably prevents cracking and peeling of the coating film 7. Furthermore, the thermally sprayed film is preferably subjected to a sealing treatment to fill pores in the film. This results in a highly dense coating film 7, which contributes to the stable supply of DC voltage.

[0026] FIG. 2 is a graph showing an example of the change over time in the surface temperature of the second substrate during the formation of a thermal sprayed film. The graph shown in FIG. 2 is a graph for the case where A5052 is used as the constituent material of the second substrate 6, aluminum oxide is used as the constituent material of the thermal sprayed film (coating film 7), and tungsten is used as the constituent material of the electrode 8. As described above, the thermal sprayed film is formed while maintaining the surface temperature of the second substrate 6 at the lower limit of the thermal spraying temperature using refrigerant R. When aluminum oxide is used as the constituent material of the thermal sprayed film, the lower limit of the thermal spraying temperature is preferably 50±10°C, and more preferably 50±5°C. The surface temperature of the second substrate 6 is measured at five random locations.

[0027] First, prior to forming the sprayed film, a surface preparation is performed by blasting to improve the adhesion of the sprayed material, and the second substrate 6 is preheated by a predetermined method until the surface temperature reaches 50° C. (preheating step).

[0028] Next, the constituent material of the sprayed film is sprayed in a semi-molten state onto the second substrate 6 (lower layer spraying step). The sprayed film formed in this lower layer spraying step becomes a base layer onto which the constituent material of the electrode 8 is sprayed in a semi-molten state in the next step, the intermediate layer spraying step.

[0029] Next, the constituent material of the electrode 8 is sprayed in a semi-molten state onto the base layer to form the electrode 8 as an intermediate layer (intermediate layer spraying step).

[0030] Next, a constituent material that will become the sprayed film is sprayed in a semi-molten state onto the base layer on which the electrode 8 has been formed (upper layer spraying step). The electrode 8 on the base layer is covered with the sprayed film formed in this upper layer spraying step. This forms the coating film 7 in which the electrode 8 is embedded.

[0031] As shown in Figure 2, the temperature of the second substrate 6 repeatedly rises and falls gradually during the lower layer spraying process, the middle layer spraying process, and the upper layer spraying process. Specifically, the temperature of the second substrate 6 repeatedly rises due to the spraying and then falls due to the supply of the coolant R to the substrate support table 3. This allows the surface temperature of the second substrate 6 to be maintained at the lower limit of the spraying temperature during the lower layer spraying process, the middle layer spraying process, and the upper layer spraying process. Note that even when A4032, A4047, or A4045 is used as the constituent material of the second substrate 6 and aluminum oxide, yttrium oxide, or a compound containing yttrium oxide, silicon oxide, and aluminum oxide is used as the constituent material of the sprayed coating, results similar to those shown in the graph in Figure 2 are obtained.

[0032] In contrast, when the coolant R is not supplied to the substrate support table 3, the surface temperature of the second substrate 6 continues to rise as the lower layer spraying process, the middle layer spraying process, and the upper layer spraying process are performed in sequence. As a result, the surface temperature of the second substrate 6 at each measurement point cannot be maintained at the lower limit temperature for spraying, and may reach, for example, 80°C or higher. In this case, the compressive stress σ during processing described above increases, increasing the possibility of cracking or peeling of the coating film 7.

[0033] Although the preferred embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments, and various modifications and changes are possible within the scope of the gist thereof. In the above-described embodiment, the substrate processing apparatus 1 is applied to a plasma etching apparatus, but is not limited thereto, and can also be applied to, for example, a film forming apparatus that forms a film on a processing target. In the above-described embodiment, the second base material 6 is made of an aluminum alloy containing silicon, but is not limited thereto, and can also be made of, for example, copper. There are no particular restrictions on the copper, and it is preferable to use, for example, C1020. The linear expansion coefficient of C1020 is 17.7[×10 -6 / °C]. When the second base material 6 is made of copper, it is preferable that a plating film made of nickel is formed on the second base material 6. The nickel plating film has excellent corrosion resistance, similar to the anodic oxide coating 63. [Explanation of symbols]

[0034] 1. Substrate processing equipment 2. Processing chamber 3 Board mounting table 6 Second base material 61 Top surface 7 Coating film G board

Claims

1. A substrate mounting table that is disposed in a chamber of a substrate processing apparatus and is cooled to −20° C. or less when a substrate placed thereon is subjected to processing, a substrate having a planar upper surface; a coating film covering at least the upper surface of the base material, the substrate is made of an aluminum alloy containing silicon, the coating film is a thermal sprayed film formed by thermal spraying on the upper surface, The thermal sprayed film is formed while the surface temperature of the upper surface is maintained at the lowest temperature at which the thermal spraying is possible.

2. The substrate stage according to claim 1 , wherein the coating film is made of aluminum oxide.

3. The substrate mounting table according to claim 2 , wherein the lower limit temperature is 50±10° C.

4. 2. The substrate supporting member according to claim 1, wherein the coating film is made of yttrium oxide or a compound containing yttrium oxide, silicon oxide, and aluminum oxide.

5. The substrate mounting table according to claim 4 , wherein the lower limit temperature is 50±10° C.

6. A substrate mounting table that is disposed in a chamber of a substrate processing apparatus and is cooled to −20° C. or less when a substrate placed thereon is subjected to processing, a substrate having a planar upper surface; a coating film covering at least the upper surface of the base material, the substrate is made of an aluminum alloy containing silicon, The substrate support, wherein the coating film generates a compressive stress of −131.5 MPa or more when the substrate is processed.

7. 7. The substrate supporting member according to claim 6, wherein the coating film is made of aluminum oxide, yttrium oxide, or a compound containing yttrium oxide, silicon oxide, and aluminum oxide.

8. 7. The substrate supporting member according to claim 1, wherein the aluminum alloy is an alloy conforming to JIS H 4000.

9. 9. The substrate supporting member according to claim 8, wherein the aluminum alloy is any one of A4032, A4047, and A4045.

10. 10. The substrate stage according to claim 1, further comprising an electrode embedded in the coating film for electrostatically attracting the substrate placed on the coating film.

11. The substrate stage according to claim 10 , wherein the electrode is made of tungsten.

12. A substrate processing apparatus including a chamber and a substrate mounting table disposed in the chamber and cooled to −20° C. or below when a substrate placed thereon is processed, The substrate mounting table is a substrate having a planar upper surface; a coating film covering at least the upper surface of the base material, the substrate is made of an aluminum alloy containing silicon, the coating film is a thermal sprayed film formed by thermal spraying on the upper surface, The thermal sprayed film is formed while maintaining the surface temperature of the upper surface at the lowest temperature at which thermal spraying is possible.

13. A substrate processing apparatus including: a chamber; and a substrate mounting table disposed in the chamber and cooled to −20° C. or below when a substrate placed thereon is processed, The substrate mounting table is a substrate having a planar upper surface; a coating film covering at least the upper surface of the base material, the substrate is made of an aluminum alloy containing silicon, The substrate processing apparatus, wherein the coating film generates a compressive stress of −131.5 MPa or more when the substrate is processed.

14. A method for manufacturing a substrate support table that is disposed in a chamber of a substrate processing apparatus and is cooled to −20° C. or less when a substrate placed thereon is subjected to processing, comprising: The substrate mounting table is a substrate having a planar upper surface; a coating film covering at least the upper surface of the base material, the substrate is made of an aluminum alloy containing silicon, The method for manufacturing the substrate mounting table includes: a coating film forming step of forming the coating film as a thermal sprayed film formed by thermal spraying on the upper surface, In the coating film forming step, the surface temperature of the upper surface is maintained at a lower limit temperature at which the thermal spraying can be performed.

15. The method for manufacturing a substrate table according to claim 14 , wherein the coating film is made of aluminum oxide.

16. 16. The method for manufacturing a substrate table according to claim 15, wherein the lower limit temperature is 50±10°C.

17. 15. The method for manufacturing a substrate support table according to claim 14, wherein the coating film is made of yttrium oxide or a compound containing yttrium oxide, silicon oxide, and aluminum oxide.

18. 18. The method for manufacturing a substrate table according to claim 17, wherein the lower limit temperature is 50±10°C.

19. A method for manufacturing a substrate support table that is disposed in a chamber of a substrate processing apparatus and is cooled to −20° C. or less when a substrate placed thereon is subjected to processing, comprising: The substrate mounting table is a substrate having a planar upper surface; a coating film covering at least the upper surface of the base material, the substrate is made of an aluminum alloy containing silicon, The method for manufacturing the substrate mounting table includes: a coating film forming step of forming the coating film on the upper surface, In the coating film forming step, the coating film is formed so that a compressive stress generated when the substrate is processed is −131.5 MPa or more.

20. 20. The method for manufacturing a substrate stage according to claim 19, wherein the coating film is made of aluminum oxide, yttrium oxide, or a compound containing yttrium oxide, silicon oxide, and aluminum oxide.

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