Separation device

Abstract

To provide a separation device capable of preventing liquid from remaining inside a plate member during separation.SOLUTION: A separation device according to an embodiment includes a rotation holding section for holding and rotating a plate member, a first nozzle for spraying liquid onto the side surface of the rotating plate member, and a second nozzle for spraying gas onto the side surface of the rotating plate member.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] SUMMARY OF THE INVENTION An embodiment of the present invention relates to a separation device. [Background technology]

[0002] There are cases where a technique for separating plate members is required. For example, a separation device has been proposed that uses a water jet to separate bonded substrates (an example of a plate member), which are a pair of substrates bonded together (see Patent Document 1). In such a separation device, a holding mechanism holds the bonded substrates and rotates the bonded substrates. A high-pressure liquid is then sprayed from a nozzle toward the sides of the bonded substrates. The sprayed liquid penetrates between the substrates (inside the bonded substrates), creating a wedge effect, which separates the bonded substrates.

[0003] However, as the separation of the bonded substrates progresses, it becomes difficult to discharge the liquid that has entered between the substrates to the outside. Because high-pressure liquid is continuously sprayed from the nozzle, if liquid remains between the substrates, the high-pressure liquid sprayed from the nozzle may collide with the remaining liquid. When the high-pressure liquid sprayed from the nozzle collides with the remaining liquid, the kinetic energy of the sprayed liquid is attenuated, which may hinder the progress of separation of the bonded substrates.

[0004] Therefore, there has been a demand for the development of a separation device that can prevent liquid from remaining inside the plate members during separation. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-150456 Summary of the Invention [Problem to be solved by the invention]

[0006] The problem to be solved by the present invention is to provide a separation device that can prevent liquid from remaining inside plate members during separation. [Means for solving the problem]

[0007] The separation device according to the embodiment includes a rotary holding unit that holds and rotates a plate member, a first nozzle that sprays a liquid onto the side of the rotating plate member, and a second nozzle that sprays a gas onto the side of the rotating plate member. [Effects of the Invention]

[0008] According to an embodiment of the present invention, a separation device is provided that can prevent liquid from remaining inside plate members during separation. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a schematic diagram illustrating a separation device according to an embodiment of the present invention; [Figure 2] 2 is a schematic perspective view of the separation device in FIG. 1 as seen from the AA direction. FIG. [Figure 3] 10A and 10B are schematic views for illustrating separation of a plate member. [Figure 4] 10A and 10B are schematic views for illustrating separation of a plate member. [Figure 5] 10A and 10B are schematic views for illustrating separation of a plate member. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments will be illustrated with reference to the drawings. In each drawing, like components are designated by like reference numerals and detailed descriptions thereof will be omitted where appropriate.

[0011] The plate member separated by the separating apparatus 1 according to this embodiment is a bonded substrate 100. The bonded substrate 100 has, for example, a substrate 101 and a substrate 102 bonded to one side of the substrate 101. There are no particular limitations on the substrates 101 and 102 as long as they are plate-shaped. The substrates 101 and 102 can be, for example, semiconductor wafers, substrates containing inorganic materials such as quartz or ceramics, or substrates containing metal.

[0012] In the following, as an example, a case will be described in which the substrate 101 and the substrate 102 are semiconductor wafers. A porous layer is provided on one surface of the substrate 101, and a single-crystal Si layer is provided on the porous layer. A single-crystal Si layer is provided on one surface of the substrate 102. An insulating layer is provided on the single-crystal Si layer of the substrate 101 or on the single-crystal Si layer of the substrate 102. The substrates 101 and 102 are bonded together with the insulating layer interposed therebetween. However, the bonded substrate 100 is not limited to the example shown. The bonded substrate 100 may be any substrate in which the substrate 101 and the substrate 102 are bonded together. The plate member may be two plates bonded together and separated by the separation device 1, or a single plate that is separated (divided) into two pieces by the separation device 1.

[0013] FIG. 1 is a schematic diagram illustrating a separation device 1 according to the present embodiment. FIG. 2 is a schematic perspective view of the separation device 1 in FIG. 1 as viewed from the AA direction. In order to avoid complexity, Figure 2 omits all elements other than the bonded substrate 100, the chuck 21, the support section 22, the separation section 40 (nozzle 41: equivalent to an example of a first nozzle, moving section 43), and the liquid removal section 50 (nozzle 51: equivalent to an example of a second nozzle). As shown in FIG. 1, the separation device 1 includes, for example, a base 10, a rotation holder 20, a positioning unit 30, a separation unit 40, a liquid removal unit 50, and a controller 60.

[0014] The base 10 can be provided, for example, at the installation location of the separation device 1. A rotation holder 20, a positioning unit 30, a separation unit 40, and a liquid removal unit 50 can be provided on one side of the base 10. In addition, a base 10a can be provided opposite the base 10. A chuck 21, a support unit 22, a chuck 23, a drive unit 24, and a movement unit 25, which will be described later, are provided between the base 10a and the base 10. The base 10a can be integrated with the base 10 via, for example, a stand (not shown) or the like.

[0015] The rotary holder 20 holds and rotates a bonded substrate 100 in which a pair of substrates 101 and 102 are bonded together. The rotation holding unit 20 includes, for example, a chuck 21, a support unit 22, a chuck 23, a drive unit 24, a moving unit 25, and an exhaust unit 26.

[0016] The chuck 21 is provided on the substrate 101 side of the bonded substrate 100. The chuck 21 suction-holds one surface (the surface on the substrate 101 side) of the bonded substrate 100. The chuck 21 can be, for example, a vacuum chuck. For example, a suction hole is opened in the surface of the chuck 21 on the bonded substrate 100 side. An exhaust unit 26 is connected to the suction hole.

[0017] The support portion 22 rotatably supports the chuck 21. The support portion 22 is provided on, for example, the base 10a. The support portion 22 includes, for example, a rotation shaft 22a and a rotation mechanism 22b.

[0018] The rotating shaft 22a extends along the central rotation axis 1a of the separation device 1. A chuck 21 is provided on one end side of the rotating shaft 22a. The other end side of the rotating shaft 22a is connected to a rotation mechanism 22b.

[0019] The rotation mechanism 22b rotates the chuck 21 in synchronization with the chuck 23, which will be described later. The rotation mechanism 22b has a synchronization transmission member such as a timing belt or a timing pulley. The synchronization transmission member is connected to the rotation shaft 22a on which the chuck 21 is provided and to the drive unit 24, which will be described later. In this manner, the drive unit 24 can rotate the chuck 21 simultaneously with the chuck 23, which will be described later, and at the same rotation speed. This makes it possible to simplify the configuration of the rotation mechanism 22b and the control program, and ultimately to reduce the manufacturing cost of the separation device 1.

[0020] The chuck 23 is provided on the substrate 102 side of the bonded substrate 100. The chuck 23 suction-holds the other surface of the bonded substrate 100 (the surface opposite to the surface on the substrate 101 side). The chuck 23 can be, for example, a vacuum chuck. For example, a suction hole is opened in the surface of the chuck 23 on the bonded substrate 100 side. An exhaust unit 26 is connected to the suction hole. As shown in FIG. 1 , the chuck 23 suction-holds the surface of the bonded substrate 100 on the lower side in the direction of gravity. Therefore, after the bonded substrate 100 is separated into the substrate 101 and the substrate 102, the chuck 23 holds the substrate 102 on the lower side in the direction of gravity.

[0021] The drive unit 24 rotates the chuck 23 and also rotates the chuck 21 in synchronization with the chuck 23 via the rotation mechanism 22b and the rotation shaft 22a. Therefore, the drive unit 24 can rotate the bonded substrate 100 held by the chuck 23 and the chuck 21. The drive unit 24 can also control the rotation speed of the bonded substrate 100 and start and stop the rotation. The drive unit 24 can include, for example, a control motor such as a servo motor and a rotation shaft 24a. The chuck 23 is provided on one end side of the rotation shaft 24a. The other end side of the rotation shaft 24a is connected to the control motor via a transmission member or the like.

[0022] 1, the central axis of the rotation shaft 22a, the central axis of the chuck 21, the central axis of the chuck 23, and the central axis of the rotation shaft 24a overlap with the rotation central axis 1a. That is, these central axes are arranged to be coaxial. Therefore, when the bonded substrate 100 is rotated, it is possible to prevent the relative positions of the chuck 21 and the chuck 23 from shifting in the direction perpendicular to the rotation central axis 1a.

[0023] The moving unit 25 moves the driving unit 24 in a direction along the rotation central axis 1a. The moving unit 25, for example, raises and lowers the driving unit 24. Since the driving unit 24 (rotation axis 24a) is provided with a chuck 23, the distance between the chuck 23 and the chuck 21 in the direction along the rotation central axis 1a can be changed by moving the driving unit 24 with the moving unit 25. Therefore, the moving unit 25 can hold and release the bonded substrate 100 by the chuck 23 and the chuck 21. The moving unit 25 can have, for example, a driving mechanism such as an air cylinder or a hydraulic cylinder, and a guide mechanism for moving the driving unit 24 linearly.

[0024] The exhaust unit 26 is connected to the chuck 21 via a piping member such as a rotary joint provided on the support unit 22. The exhaust unit 26 sucks gas between the chuck 21 and the bonded substrate 100 (substrate 101) so that the pressure between the chuck 21 and the bonded substrate 100 (substrate 101) becomes negative. The exhaust unit 26 is also connected to the chuck 23 via a piping member such as a rotary joint provided on the drive unit 24. The exhaust unit 26 sucks gas between the chuck 23 and the bonded substrate 100 (substrate 102) so that the pressure between the chuck 23 and the bonded substrate 100 (substrate 102) becomes negative. The exhaust unit 26 has an exhaust device such as a vacuum pump.

[0025] A gas-liquid separator may also be provided between the chucks 21 and 23 and an exhaust device such as a vacuum pump.

[0026] Furthermore, a pressure control device can be provided at least between the chuck 21 and the gas-liquid separator and between the chuck 23 and the gas-liquid separator. If a pressure control device is provided, it becomes possible to control the chucking force of the chuck 21 and the chuck 23.

[0027] The positioning unit 30 positions the bonded substrate 100 in a direction perpendicular to the rotation center axis 1a. The positioning unit 30 aligns the position of the bonded substrate 100 so that the center of the bonded substrate 100 overlaps with the rotation center axis 1a of the separation device 1 in a plan view. Therefore, the rotation center axis of the bonded substrate 100 after positioning can be the rotation center axis 1a.

[0028] The positioning portion 30 has, for example, a pin 31, an arm 32, a moving portion 33, a moving portion 34, a guide 35, and an absorbing portion 36. A plurality of sets of the pin 31, the arm 32, the moving portion 33, the guide 35, and the absorbing portion 36 can be provided.

[0029] The pin 31 has, for example, a columnar shape and extends in a direction along the rotation central axis 1a. The side surface of the pin 31 contacts the side surface of the laminated substrate 100. The pin 31 can be provided, for example, at the upper end of the arm 32. When viewed from the direction along the rotation central axis 1a, the multiple pins 31 can be provided at positions that are rotationally symmetric with respect to the rotation central axis 1a.

[0030] The arm 32 is plate-shaped and extends in a direction along the rotation center axis 1a. The moving unit 33 moves the arm 32 in a direction along the rotation central axis 1a. For example, the moving unit 33 raises and lowers the arm 32. The moving unit 33 has a driving mechanism such as an air cylinder or a hydraulic cylinder.

[0031] One moving unit 34 can be provided for each of the multiple arms 32. The moving unit 34 has, for example, a link mechanism or a cam mechanism, and simultaneously changes the positions of the multiple arms 32 in a direction perpendicular to the rotation center axis 1a. For example, the moving unit 34 moves the multiple arms 32 toward the rotation center axis 1a, causing the multiple pins 31 to press the side surfaces of the bonded substrate 100 toward the rotation center axis 1a. The multiple pins 31 press the side surfaces of the bonded substrate 100 toward the rotation center axis 1a, causing the center of the bonded substrate 100 to overlap the rotation center axis 1a in a plan view. In other words, the bonded substrate 100 is positioned. Furthermore, for example, the moving unit 34 moves the multiple arms 32 in a direction away from the rotation center axis 1a, thereby moving the multiple pins 31 away from the side surfaces of the bonded substrate 100.

[0032] The guides 35 are provided between each of the multiple arms 32 and the moving unit 34. The guides 35 guide the movement of the arms 32 in the direction along the central rotation axis 1a. The guides 35 may be, for example, linear guides. The provision of the guides 35 makes it possible to arbitrarily change the relative positions between the arms 32 and the moving unit 34 in the direction along the central rotation axis 1a.

[0033] The absorbing unit 36 ​​is provided between the arm 32 and the moving unit 33. The absorbing unit 36 ​​absorbs changes in position between the arm 32 and the moving unit 33 in a direction perpendicular to the rotation center axis 1a. The absorbing unit 36 ​​may include an elastic body such as rubber or a spring. If the absorbing unit 36 ​​is provided, the moving unit 34 can absorb the amount of misalignment even if the position between the moving unit 33 and the arm 32 is misaligned in the direction perpendicular to the rotation center axis 1a.

[0034] The separating unit 40 sprays a high-pressure liquid 40a onto the side surface of the rotating bonded substrate 100 to separate the bonded substrate 100 into the substrate 101 and the substrate 102. The liquid 40a is sprayed toward a layer (e.g., a porous layer or a single-crystal Si layer) provided between the substrate 101 and the substrate 102. The liquid 40a can be, for example, water such as ultrapure water. When the liquid 40a is water, the separating unit 40 can be a so-called water jet device.

[0035] The separating unit 40 includes, for example, a nozzle 41, a supply unit 42, and a moving unit 43. The nozzle 41 sprays the liquid 40a onto the side surface of the rotating bonded substrate 100. The nozzle 41 is cylindrical and has an ejection port 41a at one end. The diameter of the ejection port 41a is, for example, about 0.1 mm to 1 mm. The radial width (thickness) of the end of the nozzle 41 where the ejection port 41a is provided is, for example, about 1 cm to 5 cm. By setting the width of the end of the nozzle 41 in this manner, damage to the nozzle 41 can be suppressed even if the liquid 40a is ejected at high pressure. In the direction along the rotation central axis 1a, the central axis of the ejection port 41a of the nozzle 41 is located between the substrates 101 and 102. Furthermore, the central axis of the ejection port 41a of the nozzle 41 can be, for example, approximately parallel to the surface of the chuck 23 facing the bonded substrate 100.

[0036] The supply unit 42 supplies high-pressure liquid 40a to the nozzle 41. The pressure of the liquid 40a sprayed from the nozzle 41 is, for example, about 15 MPa to 90 MPa. The flow rate of the liquid 40a is about 60 mL / min to 150 mL / min.

[0037] The supply unit 42 is connected, for example, via a high-pressure pipe, to the end of the nozzle 41 opposite to the end where the injection port 41a is provided. The supply unit 42 may be provided with, for example, a tank for storing the liquid 40a, a high-pressure pump for supplying the liquid 40a stored in the tank to the nozzle 41, a control valve for controlling the flow rate and pressure of the liquid 40a supplied to the nozzle 41, and a switching valve for switching between supplying and stopping the supply of the liquid 40a.

[0038] The moving unit 43 moves the position of the nozzle 41 (jet nozzle 41a) between, for example, a direction along a tangent to the periphery of the bonded substrate 100 and a direction toward the rotation center axis (for example, rotation center axis 1a) of the bonded substrate 100. The moving unit 43 can be, for example, an XY table or a robot capable of control along two or more axes. The moving unit 43 can be provided on the base 10 via, for example, a stand 43a.

[0039] 1, the bonded substrate 100 is held substantially horizontally by the chuck 21 and the chuck 23. Therefore, the liquid 40a that is ejected from the nozzle 41 and seeps between the substrates 101 and 102 is difficult to expel to the outside of the bonded substrate 100. Since the liquid 40a is continuously ejected from the nozzle 41, if the liquid 40a remains between the substrates 101 and 102, the liquid 40a ejected from the nozzle 41 may collide with the remaining liquid 40a. When the ejected liquid 40a collides with the remaining liquid 40a, the kinetic energy of the ejected liquid 40a is attenuated. When the kinetic energy of the ejected liquid 40a is attenuated, the progress of separation between the substrates 101 and 102 may be hindered. In this case, if the ejection pressure of the liquid 40a is increased to increase the kinetic energy of the liquid 40a, the force applied to at least one of the substrates 101 and 102 increases, which may damage at least one of the substrates 101 and 102.

[0040] Furthermore, the liquid 40a sprayed from the nozzle 41 may accumulate on the bonded substrate 100. In this case, as the separation of the substrates 101 and 102 progresses and a gap forms between the substrates 101 and 102, the weight of the liquid 40a accumulated on the bonded substrate 100 may cause the periphery of the upper substrate 101 to bend downward. For example, if the substrate 101 is a semiconductor wafer, it may have a thickness of 800 μm or less, which is very thin. Therefore, if the substrate 101 is a semiconductor wafer, the weight of the liquid 40a accumulated on the bonded substrate 100 may cause the periphery of the substrate 101 to bend downward.

[0041] On the other hand, the liquid 40a adhering to the underside of the substrate 102 easily falls off, so the weight of the adhering liquid 40a hardly causes bending of the substrate 102. Therefore, when the peripheral edge of the substrate 101 bends downward, the gap between the substrates 101 and 102 narrows, making it difficult for the ejected liquid 40a to reach the central region of the bonded substrate 100. If it becomes difficult for the ejected liquid 40a to reach the central region of the bonded substrate 100, the progress of separation between the substrates 101 and 102 may be hindered. Furthermore, there is a risk that the liquid 40a ejected from the nozzle 41 will collide with the bent substrate 101, deforming or damaging the substrate 101.

[0042] Therefore, the separation device 1 is provided with a liquid removal section 50. As shown in FIGS. 1 and 2, the liquid removal unit 50 includes, for example, a nozzle 51 and a supply unit 52. The nozzle 51 sprays the gas 50a onto the side surface of the rotating bonded substrate 100. For example, the nozzle 51 sprays the gas 50a toward the gap between the separated substrates 101 and 102. There are no particular limitations on the gas 50a as long as it does not react with the material of the substrate 101 or the material of the substrate 102. The gas 50a can be, for example, an inert gas such as nitrogen gas or a rare gas, or CDA (Clean Dry Air).

[0043] The spray pattern of the nozzle 51 can be appropriately selected depending on the rigidity of the substrates 101 and 102, the size of the gap formed between the substrates 101 and 102, and the like.

[0044] For example, when the spray pattern is a straight type or a cone type, the sprayed gas 50a can be made more linear and the flow rate can be increased. As a result, large kinetic energy can be applied to the liquid 40a remaining between the substrates 101 and 102 and the liquid 40a adhering to the bonded substrate 100. However, since the kinetic energy of the sprayed gas 50a is large, the force applied to the separated substrates 101 and 102 is also large.

[0045] For example, when the spray pattern is a flat type or a curtain type, the spray pattern can be one in which the dimension in the direction along the rotational axis 1a of the bonded substrate 100 is small and the dimension in the direction intersecting the rotational axis 1a of the bonded substrate 100 is large. For example, the ejection port 51a opening at the end of the nozzle 51 on the bonded substrate 100 side may be configured so that the dimension in the direction along the rotational axis 1a of the bonded substrate 100 is smaller than the dimension in the direction intersecting the rotational axis 1a.

[0046] In the case of the above-described flat type, curtain type, or other spray pattern, the flow velocity of the sprayed gas 50a is slower than in the case of the straight type, etc. Therefore, the kinetic energy of the sprayed gas 50a can be prevented from increasing, and the force applied to the separated substrates 101 and 102 can be reduced.

[0047] Therefore, for example, in the case of a metal plate or a thick substrate, any type of spray pattern may be used. In this case, in consideration of the discharge and removal of the liquid 40a over a wide area, a spray pattern such as a flat type or curtain type with a large spray area of ​​the gas 50a is preferable.

[0048] For example, in the case of a semiconductor wafer or a thin substrate, it is preferable to use a flat type or curtain type spray pattern, etc. This allows the liquid 40a to be discharged or removed over a wide area, and also prevents at least one of the substrates 101 and 102 from being damaged or deformed.

[0049] The supply unit 52 supplies pressurized gas 50a to the nozzle 51. The supply pressure of the gas 50a can be set appropriately depending on the rigidity of the substrates 101 and 102. For example, the supply pressure of the gas 50a can be determined by performing experiments, simulations, or the like, so as to be a pressure that can discharge or remove the liquid 40a between the substrates 101 and 102 and on the bonded substrate 100, and that can prevent at least one of the substrates 101 and 102 from being damaged or deformed. For example, in the case of a semiconductor wafer or the like, the supply pressure of the gas 50a can be set to 0.7 MPa or less.

[0050] The pressure and flow rate of the gas 50a can be constant, or can be changed depending on the degree to which the substrates 101 and 102 are opened during separation, the progress of separation, and other conditions. For example, the pressure and flow rate of the gas 50a can be increased as separation of the outer peripheral region of the bonded substrate 100 progresses. In the case of semiconductor wafers or thin plate materials, the amount of deflection of at least one of the substrates 101 and 102 can be detected using a displacement meter or the like. If a deflection amount that may cause damage to at least one of the substrates 101 and 102 is detected, the supply pressure and flow rate of the gas 50a can be reduced.

[0051] Supply unit 52 is connected, for example, via piping, to the end of nozzle 51 opposite to the end where the injection port is provided. Supply unit 52 may be provided with, for example, a cylinder or factory piping that stores compressed gas 50a, a control valve that controls the flow rate and pressure of gas 50a supplied to nozzle 51, and a switching valve that switches between supplying and stopping the supply of gas 50a.

[0052] The nozzle 51 can be provided, for example, in the moving unit 43 described above. When the nozzle 51 is provided in the moving unit 43, the nozzle 41 and the nozzle 51 move together. However, the nozzle 51 can also be provided in a moving unit separate from the moving unit 43. In this case, the moving unit in which the nozzle 51 is provided can be the same as the moving unit 43 described above. If the nozzle 51 is provided in a moving unit separate from the moving unit 43, the operations of the nozzle 41 and the nozzle 51 can be controlled individually. On the other hand, if the nozzle 41 and the nozzle 51 are provided in a common moving unit 43, the configuration of the separation device 1 can be simplified, the separation device 1 can be made smaller, and the control program can be simplified, which in turn can reduce the manufacturing cost of the separation device 1.

[0053] Alternatively, nozzle 51 may be fixed at a predetermined position. However, if nozzle 41 and nozzle 51 move together or nozzle 51 moves following nozzle 41, gas 50a can be sprayed near the area where liquid 40a has been sprayed. Therefore, liquid 40a remaining between substrate 101 and substrate 102 can be efficiently discharged, and liquid 40a adhering to substrate 101 and substrate 102 can be efficiently removed.

[0054] 1 and 2, the nozzle 41 and the nozzle 51 can be arranged side by side in a plane that is approximately perpendicular to the central axis 1a of rotation of the bonded substrate 100. The nozzle 41 and the nozzle 51 are arranged so that their axes are parallel to each other. This prevents the gas 50a supplied from the nozzle 51 from colliding with the liquid 40a ejected from the nozzle 41, and therefore allows the liquid 40a to penetrate between the substrates 101 and 102 without being hindered, and allows the separation of the bonded substrate 100 to proceed.

[0055] Also, it is possible to provide at least one nozzle 51. For example, the nozzle 51 illustrated in Fig. 2 and Figs. 3 to 5 described later is provided downstream of the nozzle 41 in the rotation direction of the bonded substrate 100, but the nozzle 51 may be provided upstream of the nozzle 41. Also, it is possible to provide a nozzle 51 both downstream of the nozzle 41 and upstream of the nozzle 41.

[0056] When the nozzle 51 is provided downstream of the nozzle 41 in the rotation direction of the bonded substrate 100, the liquid 40a remaining between the substrates 101 and 102, which is ejected from the nozzle 41, can be removed by the gas 50a, and the liquid 40a pooled on the bonded substrate 100 can be immediately removed. This causes the peripheral edge of the bonded substrate 100 to bend downward, which can prevent the peripheral edges of the substrates 101 and 102 from closing. As a result, the liquid 40a ejected from the nozzle 41 is less likely to penetrate between the substrates 101 and 102, preventing the separation from being hindered.

[0057] Alternatively, when the nozzle 51 is provided upstream of the nozzle 41 in the rotation direction of the bonded substrate 100, the liquid 40a can be sprayed onto the side surface of the bonded substrate 100 immediately after the liquid 40a remaining between the substrates 101 and 102 has been removed by the gas 50a. This makes it possible to remove the remaining liquid 40a immediately before spraying the liquid 40a, thereby reducing the risk of the sprayed liquid 40a colliding with the remaining liquid 40a.

[0058] Furthermore, by supplying gas 50a between substrates 101 and 102, the peripheral edges of substrates 101 and 102 are opened, and immediately thereafter, liquid 40a can be sprayed. This makes it easier for sprayed liquid 40a to penetrate between substrates 101 and 102, allowing separation to proceed more efficiently.

[0059] The controller 60 includes, for example, a calculation unit such as a CPU (Central Processing Unit) and a storage unit such as a memory. The controller 60 is, for example, a computer. The controller 60 controls the operation of each element provided in the separation device 1 based on a control program stored in the storage unit.

[0060] Next, the operation of the separating device 1, that is, the separation of the bonded substrate 100, which is an example of a plate member, will be described. 3 to 5 are schematic views illustrating the separation of the bonded substrate 100. FIG. 3 to 5 show the case where nozzle 41 and nozzle 51 move together. When nozzle 41 and nozzle 51 move separately, nozzle 51 should be made to operate in the same manner as nozzle 41.

[0061] In the step of separating the bonded substrate 100, first, the chucks 21 and 23 are rotated, thereby rotating the bonded substrate 100 held by suction on the chucks 21 and 23.

[0062] Next, as shown by the solid line in FIG. 3 , the nozzle 41, which was positioned at the standby position [a], is moved to the vicinity of the periphery of the bonded substrate 100 and positioned at the separation start position [b]. The separation start position [b] is a predetermined position on the side surface of the bonded substrate 100 from the nozzle 41, where the central axis of the nozzle outlet 41a of the nozzle 41 overlaps with a tangent to the periphery of the bonded substrate 100. The nozzle 41 positioned at the separation start position [b] sprays the liquid 40a between the substrates 101 and 102. At this time, because the bonded substrate 100 is rotating, the liquid 40a can be sprayed between the substrates 101 and 102 over the entire periphery of the bonded substrate 100. Therefore, separation can be performed over the entire periphery of the bonded substrate 100.

[0063] Furthermore, since the nozzle 51 moves together with the nozzle 41, the nozzle 51 also moves to the vicinity of the periphery of the bonded substrate 100. Then, the gas 50a is sprayed from the nozzle 51 toward the side surface of the bonded substrate 100. At this time, since the bonded substrate 100 is rotating, the gas 50a can be sprayed between the substrates 101 and 102 over the entire periphery of the bonded substrate 100. Therefore, the liquid 40a remaining between the substrates 101 and 102 is discharged to the outside of the bonded substrate 100. Furthermore, since the gas 50a also flows on the upper and lower surfaces of the bonded substrate 100, the liquid 40a adhering to the upper and lower surfaces is discharged to the outside of the bonded substrate 100.

[0064] Next, as shown in Figures 4 and 5, the separation of the bonded substrate 100 is advanced by moving the central axis of the nozzle 41a of the nozzle 41 toward the separation position [c] toward the center of the bonded substrate 100, and the bonded substrate 100 is separated into substrate 101 and substrate 102. For example, as shown in FIG. 4, nozzles 41 and 51 can be moved to follow the separated region, and in the region between the periphery and the central region of the bonded substrate 100, substrates 101 and 102 can be separated by spraying liquid 40a, and liquid 40a can be discharged and removed by spraying gas 50a.

[0065] 5, the nozzle 41 is positioned at the separation position [c], and the liquid 40a is sprayed from the nozzle 41 toward the center of the bonded substrate 100, thereby performing separation in the central region of the bonded substrate 100. Furthermore, the gas 50a is sprayed from the nozzle 51, thereby discharging and removing the liquid 40a in the central region of the bonded substrate 100.

[0066] In such a separation process of the bonded substrate 100, the nozzle 41 can be moved in an arc-shaped trajectory from a separation start position [b] to a separation position [c] at the center of the bonded substrate 100, as shown in Fig. 3. Furthermore, the nozzle 41 is moved so that the distance d between the nozzle 41 and the bonded substrate 100 is kept substantially constant. If the nozzle 41 is moved so that the distance d is kept substantially constant, the ejection port 41a of the nozzle 41 can be brought as close as possible to the side surface of the bonded substrate 100. Furthermore, since the nozzle 51 moves together with the nozzle 41, the nozzle 51 can also be moved in a similar trajectory.

[0067] Furthermore, since the liquid 40a is sprayed while the nozzle 41 is moved along the arc-shaped trajectory, the liquid 40a is sprayed toward a partial region Ra of the periphery of the bonded substrate 100. Furthermore, since the nozzle 51 moves together with the nozzle 41, the gas 50a is sprayed toward the region Ra. Note that the region Ra is a region that includes an arc with a central angle of 90 degrees on the periphery of the bonded substrate 100. Even if the liquid 40a is sprayed toward such a partial region Ra of the circumference, since the bonded substrate 100 is rotating, the liquid 40a is sprayed over the entire circumference of the bonded substrate 100, and separation can be performed in the entire region of the bonded substrate 100.

[0068] 5, when separation has progressed to the center of the bonded substrate 100, the nozzle 41 stops spraying the liquid 40a, and the nozzle 51 stops spraying the gas 50a. After separation of the bonded substrate 100 is complete, the nozzle 41 and the nozzle 51 move to a standby position [a] separated from the bonded substrate 100 (see FIG. 3). Then, the rotation of the chucks 21 and 23 is stopped, thereby stopping the rotation of the bonded substrate 100 that has been separated. In this manner, the bonded substrate 100 can be separated.

[0069] Although the embodiments have been described above, the present invention is not limited to these descriptions. For example, in the above embodiment, the separation device 1 is exemplified as having the rotation center axis 1a extending in a substantially vertical direction, but the present invention is also applicable to a separation device in which the rotation center axis 1a extends in a substantially horizontal direction. With respect to the above-described embodiments, those skilled in the art may add, delete, or modify components as appropriate, or add, omit, or change processes or conditions as appropriate, and these modifications are also within the scope of the present invention as long as they retain the characteristics of the present invention. For example, the shape, dimensions, material, arrangement, etc. of each element included in the separation device 1 are not limited to those exemplified, and can be changed as appropriate. Furthermore, the elements of each of the above-described embodiments can be combined to the greatest extent possible, and such combinations are also included within the scope of the present invention as long as they include the features of the present invention. [Explanation of symbols]

[0070] 1 Separation device, 1a Rotation central axis, 20 Rotation holding part, 21 Chuck, 23 Chuck, 26 Exhaust part, 40 Separation part, 40a Liquid, 41 Nozzle, 50 Liquid removal part, 51 Nozzle, 51a Spray nozzle, 60 Controller, 100 Bonded substrate, 101 Substrate, 102 Substrate

Claims

1. a rotation holding unit that holds and rotates the plate member; a first nozzle that sprays a liquid onto a side surface of the rotating plate member; a second nozzle that injects gas onto a side surface of the rotating plate member; A separation device comprising:

2. At least one second nozzle is provided, 2. The separating device according to claim 1, wherein the second nozzle is provided at least either upstream of the first nozzle or downstream of the first nozzle in the rotation direction of the plate member.

3. 3. The separation device according to claim 1, wherein the first nozzle and the second nozzle are provided so that their axes are parallel to each other.

4. 3. The separation device according to claim 1, wherein the dimension of the injection port of the second nozzle opening at the end on the plate member side in a direction along the central axis of rotation of the plate member is smaller than the dimension in a direction intersecting the central axis of rotation.

5. 3. The separating apparatus according to claim 1, wherein the spray pattern of the second nozzle is a flat type or a curtain type.

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