Antenna structures in glass cores

Abstract

To suppress warpage that may occur when integrating RF structures inside glass cores and when integrating the RF structures into buildup layers of a package substrate.SOLUTION: An embodiment includes an apparatus comprising: a substrate 240 being an amorphous glass layer; a hole 240 into the substrate; and a structure in the hole. The structure comprises: a first portion 245A comprising a first material composition; and a second portion 245B comprising a second material composition. The first portion 245A and the second portion 245B are vertically stacked within the hole.SELECTED DRAWING: Figure 2C

Description

[Background technology]

[0001] Electronic packaging solutions often rely on wired electrical interconnects to communicatively couple components together. For example, wired electrical interconnects may include copper traces, vias, pads, and / or the like. However, as devices continue to scale to smaller feature sizes and routing complexity increases, the process for designing and fabricating wireless electrical interconnects within package substrates becomes more complex. Additionally, bandwidth limitations and increasing pin counts have created difficulties in providing electrical routing within package substrates.

[0002] Therefore, several solutions for wireless coupling within package substrates have been proposed. In particular, radio frequency (RF) coupling between components has been proposed as a solution to enable higher data transmission rates and reduce routing complexity, especially in the case of three-dimensional (3D) heterogeneous integration. RF coupling can be implemented through the use of RF antenna structures, RF filtering structures, waveguiding structures (e.g., parallel-plate waveguides, dielectric waveguides, substrate-integrated waveguides), and / or passive RF structures (e.g., power dividers / combiners, phase shifters, impedance loads (R / L / C), or attenuators). However, fabrication of such devices relies on having precise control over the dimensions of the antenna structures. Currently, this capability is limited to applications within the build-up layers. Unfortunately, fabricating such RF components within the build-up layers can pose significant warpage challenges, especially in high-volume manufacturing (HVM) process flows. [Brief explanation of the drawings]

[0003] [Figure 1]FIG. 1 is a cross-sectional view of a package substrate having an organic core with integrated vias according to one embodiment. [Figure 2A] FIG. 2A is a cross-sectional view of a glass core having a radio frequency (RF) structure embedded therein, according to one embodiment, where the RF structure has a height that is less than the thickness of the core. [Figure 2B] FIG. 2B is a cross-sectional view of a glass core having an RF structure with a non-uniform depth into the core, according to one embodiment. [Figure 2C] FIG. 2C is a cross-sectional view of a glass core having an RF structure including an electrically floating conductive region, with a dielectric plug added in a vertically stacked configuration above the conductive region, according to one embodiment. [Figure 2D] FIG. 2D is a cross-sectional view of a glass core with a dielectric RF structure according to one embodiment. [Figure 2E] FIG. 2E is a cross-sectional view of a glass core with an RF structure including vertically stacked conductive regions separated by dielectric regions, according to one embodiment. [Figure 3A] FIG. 3A is a cross-sectional view of a glass core having a series of RF structures in rows of decreasing depth, according to one embodiment. [Figure 3B] FIG. 3B is a cross-sectional view of a glass core having a first series of RF structures each with opposing conductive regions and a dielectric region between the opposing conductive regions, and a second series of RF structures with floating conductive regions of reduced height, according to one embodiment. [Figure 4] FIG. 4 is a cross-sectional view of a multi-layer glass core having an RF structure with a depth different from the total thickness of the glass core or the thickness of a sub-layer of the glass core, according to one embodiment. [Figure 5]FIG. 5 is a cross-sectional view of a glass core having first RF structures wirelessly communicatively coupled to an external component and second RF structures wirelessly communicatively coupled to each other, according to one embodiment. [Figure 6A] FIG. 6A is a plan view of a glass core with RF structures arranged in various antenna configurations, according to one embodiment. [Figure 6B] FIG. 6B is a plan view of a glass core with RF structures arranged in various antenna configurations, according to one embodiment. [Figure 6C] FIG. 6C is a plan view of a glass core with RF structures arranged in various antenna configurations, according to one embodiment. [Figure 7] FIG. 7 is a perspective view of a glass module including an RF structure according to one embodiment. [Figure 8A] FIG. 8A is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 8B] FIG. 8B is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 8C] FIG. 8C is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 8D] FIG. 8D is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 8E] FIG. 8E is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 8F] FIG. 8F is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 8G] FIG. 8G is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 8H]FIG. 8H is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 8I] FIG. 8I is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 8J] FIG. 8J is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 8K] FIG. 8K is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 8L] FIG. 8L is a cross-sectional view illustrating a process for fabricating various RF structures in a glass core according to one embodiment. [Figure 9] FIG. 9 is a process flow diagram of a process for fabricating RF structures in a glass core, according to one embodiment. [Figure 10] FIG. 10 is a cross-sectional view of an electronic system including a glass core with integrated RF structures, according to one embodiment. [Figure 11] FIG. 11 is a schematic diagram of a computing device constructed in accordance with one embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0004] Described herein are electronic systems, and more specifically, antenna structures fabricated in a glass core having a height different from the thickness of the glass core, according to various embodiments. In the following description, various aspects of exemplary implementations are described using terms commonly employed by those skilled in the art to convey the substance of their work to others skilled in the art. However, it will be apparent to those skilled in the art that the present disclosure may be practiced using only some of the described aspects. For purposes of explanation, specific numbers, materials, and configurations are set forth to provide a thorough understanding of exemplary implementations. However, it will be apparent to those skilled in the art that the present disclosure may be practiced without the specific details. In other instances, well-known features have been omitted or simplified so as not to obscure the exemplary implementations.

[0005] Although various operations are described, in sequence, as multiple discrete operations in a manner that is most useful for understanding the present disclosure, the order of description should not be construed as to imply that these operations are necessarily order dependent, and in particular, these operations need not be performed in the order presented.

[0006] Various embodiments or aspects of the present disclosure are described herein. In some implementations, different embodiments are implemented separately. However, the embodiments are not limited to separately implemented embodiments. For example, two or more different embodiments may be combined together to implement as a single device, process, structure, etc. The entirety of various embodiments may be combined together in some instances. In other instances, portions of a first embodiment may be combined with portions of one or more different embodiments. For example, portions of a first embodiment may be combined with portions of a second embodiment, or portions of a first embodiment may be combined with portions of a second embodiment and a third embodiment.

[0007] As discussed above, radio frequency (RF) structures provide a wireless coupling solution to overcome the limitations inherent in electrical routing currently used in most electronic packaging solutions. For example, RF structures can enable improved data transmission rates for communication links and improved integration for three-dimensional (3D) heterogeneous integration. RF structures can also reduce routing complexity. In existing solutions, these RF structures are limited to being included in the buildup layers of the package substrate. An example of such a solution is shown in FIG. 1.

[0008] 1, a cross-sectional view of a package substrate 100 is shown. The package substrate 100 may include an organic core 110. For example, an organic dielectric material (which may include fiberglass reinforcement, etc.) is disposed between dielectric buildup layers 121. A conductive layer 105A may be disposed below the bottom buildup layer 121 (below the core 110), and a conductive layer 105B may be disposed above the top buildup layer 121 (above the core 110). A first series of RF structures 130A-130D is formed on the left side of the package substrate 100, and a second series of RF structures 131A-131D is formed on the right side of the package substrate 100. For RF structures that penetrate the core 110, the height of the RF structures 130 and 131 is equal to the thickness of the core plus an integer multiple of the thickness of each buildup layer 121. For RF structures that terminate before core 110, the height of RF structures 130 and 131 is an integer multiple of the thickness of each build-up layer 121. RF structure 131 may also include dielectric plugs 132A-132C above RF structures 131B-131D.

[0009] As can be appreciated, such a configuration requires set dimensions for the RF structures 130 and 131. This can limit the design of the RF system. Therefore, low Q antennas cannot necessarily be fabricated. Additionally, the integration of the RF structures 130 and 131 in the build-up layer 121 can result in significant warpage issues in the package substrate 100.

[0010] Thus, embodiments disclosed herein shift the formation of RF structures from the build-up layers to the core. In particular, a glass core is provided instead of an organic core. The use of a glass core can enable improved performance of RF systems due to improved electrical and mechanical properties. However, the transition to a glass core solution is not without challenges. For example, through-glass vias in the glass core are limited by the height of the glass core. Thus, to provide specific RF antenna dimensions, multiple glass cores may need to be stacked. Furthermore, forming thin glass layers (e.g., less than approximately 200 μm) is difficult and expensive. Therefore, the minimum step size for RF structure height is approximately 200 μm (e.g., 200 μm, 400 μm, 600 μm, etc.). The number of glass layers that can be reliably stacked is also limited.

[0011] For RF structures (e.g., antennas), the optimal via height with a low quality factor Q (or a larger operating frequency bandwidth) is often found as one-quarter of the guided wavelength for single-ended antenna structures and one-half of the guided wavelength for balanced antenna structures. For example, the optimal via height for forming a single-ended antenna structure for a center frequency of 140 GHz in a glass core with a dielectric constant of 5 is 240 μm. Matching a 140 GHz antenna to a 200 μm glass layer therefore results in a higher quality factor Q (or a narrower operating frequency bandwidth) as well as having a higher insertion loss.

[0012] Accordingly, embodiments described herein include processes for forming RF structures within a glass core that have a height different from the thickness of the glass core. This allows the RF structure to be tuned for a specific center frequency while also having a larger bandwidth (due to a lower quality factor Q). Thus, higher data transmission rates may be possible. Embodiments may also include RF structures that include one or more dielectric plugs vertically aligned with the conductive portions. This allows for tailoring the dielectric constant around the RF structure to further improve the wireless performance of the system.

[0013] In one embodiment, the RF structures embedded in the glass core can serve as building blocks for the creation of RF systems within the package substrate. For example, the RF structures can be assembled into RF systems including specific RF antenna configurations, specific RF filtering configurations, waveguiding structures (e.g., parallel-plate waveguides, dielectric waveguides, substrate-integrated waveguides), and / or passive RF structures (e.g., power dividers / combiners, phase shifters, impedance loads (R / L / C), or attenuators). For example, blind vias, which are dielectric materials with controlled impedance and / or loss, can be used to enable impedance load and / or attenuator passive RF structures. In some embodiments, the RF system can be fabricated as a glass module that can be integrated anywhere within the package substrate (e.g., outside the core). Furthermore, integrating the RF structures within the glass core reduces issues with warpage that can be encountered when integrating RF structures into the build-up layers of the package substrate.

[0014] 2A-2E, a series of cross-sectional views depicting portions of a package substrate 200 are shown, according to various embodiments. In the illustrated embodiments, overlaying and underlying build-up layers have been omitted for simplicity to highlight the design of the various RF structures at least partially embedded within the glass core 24.

[0015] In one embodiment, the glass core 240 described herein can be substantially all glass. The glass core 240 can be a solid mass including a glass material with an amorphous crystalline structure, where the solid glass core can also include various structures—such as vias, cavities, channels, or other features—filled with one or more other materials (e.g., metals, metal alloys, dielectric materials, etc.). Thus, the glass core 240 can be distinguished from the “prepreg” or “FR4” core of a printed circuit board (PCB) substrate, which typically includes glass fibers embedded in a resinous organic material, such as epoxy.

[0016] The glass core 240 may have any suitable dimensions. In certain embodiments, the glass core 240 may have a thickness that is approximately 50 μm or greater. For example, the thickness of the glass core 240 may be between approximately 50 μm and approximately 1.4 mm. However, smaller or larger thicknesses may also be used. The glass core 240 may have edge dimensions (e.g., length, width, etc.) that are approximately 10 mm or greater. For example, the edge dimensions may be between approximately 10 mm and approximately 250 mm. However, larger or smaller edge dimensions may also be used. More generally, the area dimensions (from a top plan view) of the glass core 240 may be between approximately 10 mm x 10 mm and approximately 250 mm x 250 mm. In one embodiment, the glass core 240 may have a first side that is perpendicular or orthogonal to a second side. In a more general embodiment, the glass core 240 may include a rectangular prism volume with sections (e.g., vias) removed and filled with other materials (e.g., metals, dielectrics, etc.).

[0017] Glass core 240 may include a single monolithic layer of glass. In other embodiments, glass core 240 may include two or more separate glass layers stacked on top of one another. The individual layers of glass may be provided in direct contact with one another, or the individual layers of glass may be mechanically bonded to one another, such as by an adhesive. The individual layers of glass in glass core 240 may each have a thickness of less than approximately 50 μm. For example, the individual layers of glass in glass core 240 may have a thickness between approximately 25 μm and approximately 50 μm. However, the individual layers of glass may have a greater or lesser thickness in some embodiments. As used herein, "approximately" may refer to a range of values ​​within 10% of the stated value. For example, approximately 50 μm may refer to a range between 45 μm and 55 μm.

[0018] Glass core 240 can be any suitable glass formulation having the necessary mechanical robustness and compatibility with semiconductor packaging fabrication and assembly processes. For example, glass core 240 can include aluminosilicate glass, borosilicate glass, alumino-borosilicate glass, silica, fused silica, etc. In some embodiments, glass core 240 can include one or more additives, such as, but not limited to, Al2O3, BO3, MgO, CaO, SrO, BaO, SnO2, Na2O, KO, SrO, PO3, ZrO2, Li2O, Ti, or Zn. More generally, glass core 240 may include silicon and oxygen, as well as any one or more of aluminum, boron, magnesium, calcium, barium, tin, sodium, potassium, strontium, phosphorus, zirconium, lithium, titanium, or zinc. In one embodiment, glass core 240 may include at least 23 percent (by weight) silicon and at least 26 percent (by weight) oxygen. In some embodiments, glass core 240 may further include at least 5 percent (by weight) aluminum.

[0019] 2A, a cross-sectional view of a portion of a package substrate 200 is shown, according to one embodiment. In one embodiment, the package substrate 200 can include a glass core 240. In one embodiment, the glass core 240 can have a thickness T. The thickness T can be similar to the thickness of any of the glass cores described in more detail above. In a particular embodiment, the thickness T can be approximately 200 μm.

[0020] In one embodiment, a first electrically conductive layer 205A (e.g., a copper layer) may be provided below the glass core 240, and a second electrically conductive layer 205B (e.g., a copper layer) may be provided above the glass core 240. Layers 205A and 205B may also be traces, pads, etc. In one embodiment, a dielectric layer 241 or 242 may be provided between the glass core 240 and the electrically conductive layers 205A and 205B. Dielectric layers 241 and 242 may sometimes be referred to as buffer layers.

[0021] In one embodiment, one or more RF structures 245 and / or 246 may be at least partially embedded within glass core 240. RF structures 245 and 246 may comprise a conductive material (e.g., copper). RF structures 245 and 246 may sometimes be referred to as vias. RF structures 245 and 246 may be configured to propagate and / or receive RF signals to / from components (or other RF structures) within package substrate 200 and / or external to package substrate 200. That is, RF structures 245 and 246 may sometimes be considered RF antennas.

[0022] In one embodiment, RF structure 245 may be electrically coupled to either conductive layer 205A or 205B. For example, RF structure 245A is electrically coupled to conductive layer 205A, and RF structure 245B is electrically coupled to conductive layer 205B. In one embodiment, RF structure 246 may be electrically floating. That is, RF structure 246 may not be directly electrically connected to other circuitry within package substrate 200. RF structures 245A and 246A may extend upward from the bottom surface of glass core 240, and RF structures 245B and 246B may extend downward from the top surface of glass core 240.

[0023] In one embodiment, RF structures 245 and 246 may be referred to as "blind" structures. That is, RF structures 245 and 246 do not completely penetrate thickness T of glass core 240. For example, RF structure 245A has a height H that is less than thickness T of glass core 240. A process for fabricating such blind structures is described in detail below. The ability to form blind structures enables the design of RF structures 245 and 246 with a desired quality factor Q. For example, RF structures 245 and 246 may be designed with a low quality factor Q to provide a higher data transmission rate as a result of a wider operating bandwidth.

[0024] Referring now to FIG. 2B, a cross-sectional view of a portion of a package substrate 200 is shown according to an additional embodiment. The package substrate 200 of FIG. 2B can be similar to the package substrate 200 of FIG. 2A except for the design of the RF structures 245 and 246. For example, in FIG. 2A, each pair of RF structures (i.e., the first pair including RF structures 245A and 246A and the second pair including RF structures 245B and 246B) terminates at the same depth into the glass core 240. However, in FIG. 2B, each pair of RF structures (i.e., the first pair including RF structures 245A and 246A and the second pair including RF structures 245B and 246B) are formed at different depths within the glass core. The first pair of RF structures 245A / 246A has a depth difference D1, and the second pair of RF structures 245B / 246B has a depth difference D2. The depth differences D1 and D2 can be as small as 1 μm and can be as large as approximately the thickness of the glass core 240.

[0025] Referring now to FIG. 2C, a cross-sectional view of a portion of a package substrate 200 is shown according to an additional embodiment. In one embodiment, the package substrate 200 may differ from that described above with respect to the configuration of the RF structures. In FIG. 2C, all of the RF structures 245-248 are floating structures. However, instead of having a single continuous material across the entire height of the RF structures 245-248, the RF structures 245-248 may have multiple portions (or regions) arranged in a vertical stack. As used herein, a "vertical stack" may refer to components arranged above (or below) each other, with the centerlines of the stacked components substantially coincident with one another. "Substantially coincident" may refer to centerlines that are within 10 μm of being perfectly coincident with one another.

[0026] In the first embodiment of FIG. 2C , the RF structure 245 may include three portions 245A-245C. The second portion 245B may be a conductive material (e.g., copper). The second portion 245B may reside in a vertical stack between the first portion 245A and the third portion 245C. The first portion 245A and the third portion 245C may include a dielectric material. In one embodiment, the dielectric material of the first portion 245A and the third portion 245C may have a dielectric constant different from the dielectric constant of the glass core 240. Thus, further tuning of the RF structure 245 may be provided. In other embodiments, the dielectric constant of the third portion 245C may be similar to or the same as the dielectric constant of the glass core 240. In one embodiment, the first height H1 of the second portion 245B may be less than the thickness T of the glass core 240. Additionally, the first portion 245A and the third portion 245C are shown with substantially similar heights. However, in other embodiments, the height of first portion 245A can be different from the height of third portion 245C. That is, the distance between the top of second portion 245B and the top of glass core 240 can be different from the distance between the bottom of second portion 245B and the bottom of glass core 240.

[0027] 2C , RF structure 246 may also include three portions 246A-246C. However, instead of first portion 246A and third portion 246C having the same dielectric material (as shown in RF structure 245), first portion 246A and third portion 246C may have different dielectric constants. Additionally, second portion 246B may have a second height H2 that is different from first height H1 of second portion 245B in RF structure 245. That is, different RF structures within the same glass core 240 may have second portions 245B / 246B with different heights.

[0028] In the third embodiment of FIG. 2C, RF structure 247 also includes three portions 247A-247C. However, RF structure 247 includes two conductive portions (i.e., first portion 247A and third portion 247C). First portion 247A may be separated from third portion 247C by dielectric second portion 247B. In the illustrated embodiment, first portion 247A and third portion 247C have substantially similar heights. However, in other embodiments, the height of first portion 247A may differ from the height of third portion 247C.

[0029] In the fourth embodiment of FIG. 2C , the RF structure 248 may include a first portion 248A separated from a second portion 248B by a portion 249 of the glass core 240. The first portion 248A and the second portion 248B may both include a conductive material (e.g., copper). In other embodiments, one or both of the first portion 248A and the second portion 248B may include a dielectric material. If both the first portion 248A and the second portion 248B include a dielectric material, the dielectric material may be the same, or the dielectric materials may be different. Despite not directly contacting each other, the first portion 248A and the second portion 248B may still be considered vertically stacked because the centerlines of the first portion 248A and the second portion 248B may substantially coincide with each other. In the illustrated embodiment, the first portion 248A and the second portion 248B have similar heights. However, in other embodiments, the first portion 248A and the second portion 248B may have different heights.

[0030] 2D , a cross-sectional view of a portion of package substrate 200 is shown in accordance with an additional embodiment. In one embodiment, first RF structure 255 includes a single dielectric material. That is, the RF structures described herein do not necessarily include a conductive material. The use of a fully dielectric RF structure (such as RF structure 255) may be advantageous for tailoring the dielectric constant of specific regions of glass core 240 to improve wireless RF transmission characteristics (e.g., through improved filtering, optimized directionality of signal propagation, etc.). In one embodiment, the dielectric constant of RF structure 255 is different from the dielectric constant of glass core 240. In some embodiments, dielectric RF structure 255 may have controlled impedance and / or loss, enabling use of RF structure 255 as an impedance load and / or attenuator.

[0031] In another embodiment, a fully dielectric RF structure 256 may be provided, including a first portion 256A and a second portion 256B. The first portion 256A and the second portion 256B may comprise different dielectric materials. In some embodiments, one or both of the first portion 256A and the second portion 256B may have a dielectric constant different from the dielectric constant of the glass core 240. As shown, the first portion 256A and the second portion 256B have different heights. In other embodiments, the first portion 256A and the second portion 256B may have the same height.

[0032] 2E, a cross-sectional view of a portion of package substrate 200 is shown, according to yet another embodiment. In one embodiment, RF structures 251-253 may include more than three portions.

[0033] In the first embodiment of FIG. 2E , RF structure 251 has four portions 251A-251D. First portion 251A can be a dielectric material, and second portion 251B can be a conductive material (e.g., copper). Second portion 251B can be vertically stacked with and in direct contact with first portion 251A. In one embodiment, third portion 251C can be vertically stacked with second portion 251B, and third portion 251C is spaced from second portion 251B by portion 249 of glass core 240. Fourth portion 251D can be a dielectric material that is vertically stacked with and in direct contact with third portion 251C. In the illustrated embodiment, first portion 251A and second portion 251B are mirror images of third portion 251C and fourth portion 251D, respectively. In other embodiments, one or both of the heights of the lower portions 251A and 251B may be different from one or both of the heights of the upper portions 251C and 251D.

[0034] 2E, RF structure 252 includes five sections 252A-252E. RF structure 252 may be similar to RF structure 251, except that there is a dielectric section 252C between lower section 252A / 252B and upper section 252D / 252E.

[0035] In the third embodiment of FIG. 2E , RF structure 253 has five portions 253A-253E. In some instances, RF structure 253 may be the inverse of RF structure 252. That is, first portion 253A, third portion 253C, and fifth portion 253E may be a conductive material (e.g., copper), while second portion 253B and fourth portion 253D may be a dielectric material. In the illustrated embodiment, first portion 253A is electrically coupled to layer 205A, fifth portion 253E is electrically coupled to layer 205B, and third portion 253C is electrically floating. In other embodiments, one or both of first portion 253A or fifth portion 253E may be electrically floating.

[0036] 3A and 3B, cross-sectional views of a portion of a package substrate 300 are shown, according to various embodiments. In the illustrated embodiment, the package substrate 300 includes a glass core 340, which may be similar to any of the glass cores described in more detail herein. The package substrate 300 may also have conductive layers 305A and 305B over / under the glass core 340. Dielectric layers 341 and 342 may separate the conductive layers 305A and 305B from the glass core 340.

[0037] Referring now to FIG. 3A, a cross-sectional view of a portion of a package substrate 300 is shown, according to one embodiment. In one embodiment, the package substrate 300 includes a first RF system 355 and a second RF system 356. In one embodiment, the first RF system 355 may have multiple adjacent RF structures 357-360. In one embodiment, the RF structures 357-360 have decreasing heights (from left to right). The RF structure 357 may be electrically coupled to the conductive layers 305A and 305B. That is, the height of the RF structure 357 may be greater than the thickness of the glass core 340. The remaining RF structures 358-360 may be blind RF structures having heights less than the thickness of the glass core 340. In the illustrated embodiment, the RF structures 358-360 are all electrically coupled to the conductive layer 305A. However, one or more of the RF structures 358-360 may be electrically floating. While four RF structures 357-360 are shown in first RF system 355, it should be understood that first RF system 355 may include any number of RF structures.

[0038] In one embodiment, second RF system 356 may be similar to first RF system 355, with the addition of a dielectric portion over the RF structure having a height less than the thickness of glass core 340. For example, RF structure 361 may be similar to RF structure 357, while RF structures 362-364 may each include two portions. For example, first portions 362A-364A may be a conductive material (e.g., copper), and overlying second portions 362B-364B may be a dielectric material. In one embodiment, the combined height of both portions of RF structures 362-364 may be substantially equal to the thickness of glass core 340.

[0039] 3B, a cross-sectional view of a portion of a package substrate 300 having a first RF system 365 and a second RF system 366 is shown, according to one embodiment. In the first RF system 365, each RF structure 367-369 includes three sections. The lower sections 367A-369A and the upper sections 367C-369C may include a conductive material (e.g., copper). The middle sections 367B-369B may include a dielectric material. In one embodiment, the first RF system 365 may include RF structures 367-369, with the middle sections 367B-369B having decreasing heights. While three RF structures 367-369 are shown in the first RF system 365, it should be understood that the first RF system 365 may include any number of RF structures.

[0040] The second RF system 366 may be the inverse of the first RF system 365. That is, the lower portions 370A-372A and upper portions 370C-372C may include a dielectric material, and the middle portions 370B-372B may include a conductive material (e.g., copper). In one embodiment, the second RF system 366 may have RF structures 370-372 with decreasing heights in the middle portions 370B-372B. While three RF structures 370-372 are shown in the second RF system 366, it should be understood that the second RF system 366 may include any number of RF structures.

[0041] Referring now to FIG. 4 , a cross-sectional view of a portion of a package substrate 400 is shown in accordance with an additional embodiment. In the illustrated embodiment, the package substrate 400 includes a multi-layer glass core 440. For example, a first glass layer 440A and a second glass layer 440B may be stacked with an interface 407. The glass layers 440A and 440B may be similar to any of the glass cores described in more detail herein. The package substrate 400 may have conductive layers 405A and 405B above and below the glass core 440. Dielectric layers 441 and 442 may separate the conductive layers 405A and 405B from the glass core 440.

[0042] In one embodiment, the package substrate 400 can include any number of RF structures 445 or 446 at least partially embedded in one or both of the first glass layer 440A or the second glass layer 440B. For example, RF structures 445A and 446A can extend upward from the bottom of the first glass layer 440A and into the second glass layer 440B. In contrast, RF structures 445B and 446B can extend downward from the top of the second glass layer 440B and into the first glass layer 440A. Furthermore, while RF structures 445 and 446 all pass completely through at least one glass layer 440A or 440B, in some embodiments, an RF structure can be present in only one of the glass layers 440A or 440B. 4 shows several examples of RF structures (e.g., RF structures 445A and 445B electrically coupled to conductive layers 405A or 405B, and floating RF structures 446A and 446B), but it should be understood that any of the RF structures described in more detail herein may be embodied in a multilayer glass core.

[0043] 5, a cross-sectional view of a portion of a package substrate 500 illustrating several RF communication coupling options is shown, according to one embodiment. In the illustrated embodiment, the package substrate 500 includes a glass core 540, which may be similar to any of the glass cores described in more detail herein. The package substrate 500 may also include conductive layers 505A and 505B above and below the glass core 540. Dielectric layers 541 and 542 may separate the conductive layers 505A and 505B from the glass core 540.

[0044] In one embodiment, the first RF structure 545 is disposed proximate to the edge surface of the glass core 540. For example, the edge surface of the first RF structure 545 can be within 100 μm of the edge surface of the glass core 540, within 50 μm of the edge surface of the glass core 540, within 20 μm of the edge surface of the glass core 540, within 5 μm of the edge surface of the glass core 540, or within 1 μm of the edge surface of the glass core 540. Proximity to the edge surface of the glass core 540 can enable wireless communication coupling (represented by wave 511) with a component 515 that is external to the package substrate 500. For example, the component 515 can be a separate package substrate (which can be on the same board as the package substrate 500 or external to the board of the package substrate 500). In one embodiment, the component 515 can also be a die, a board component, or any other device.

[0045] While the component 515 is shown as being external to the package substrate 500, other embodiments may include the component 515 integrated as part of the package substrate 500. For example, the component 515 may be embedded in a build-up layer (not shown) of the package substrate 500, embedded in the glass core 540, or bonded to the top or bottom surface of the package substrate.

[0046] In one embodiment, the second RF structure 546 may be wirelessly coupled to the third RF structure 547 (as indicated by wave 512). In the illustrated embodiment, the second RF structure 546 and the third RF structure 547 are directly adjacent to one another. However, in other embodiments, the second RF structure 546 and the third RF structure 547 may be spaced apart. In some instances, one or more other structures (e.g., vias, RF structures, etc.) may be provided in the path between the second RF structure 546 and the third RF structure 547. In some embodiments, the second RF structure 546 and the third RF structure 547 may be different portions of a single RF antenna, such as an RF patch antenna.

[0047] 5 allows for reduced routing complexity within the package substrate 500. Additionally, low quality factor Q RF structures may be used to improve data transmission rates between locations on the package substrate 500 (or between the package substrate 500 and external components 515) compared to using wireless (e.g., copper) interconnects.

[0048] 6A-6C, a series of plan views are shown depicting an RF system that may be incorporated into a glass core according to one embodiment. In the illustrated embodiment, a bottom ground plane 671 and a top ground plane 672 are shown. A glass core (not shown), similar to any of the glass cores described in more detail herein, may be provided between the bottom ground plane 671 and the top ground plane 672.

[0049] Referring now to FIG. 6A , a plan view of an RF system 670 that is an open-ended waveguide antenna is shown, according to one embodiment. As shown, a plurality of through glass vias (TGVs) 675 can form a U-shape around the driven RF structure 645. The TGVs 675 can be standard TGVs that penetrate the entire thickness of the glass core (not shown) and contact both a bottom ground plane 671 and a top ground plane 672. The driven RF structure 645 can be a blind RF structure 645 similar to any of the RF structures described in more detail herein. For example, the conductive portion of the driven RF structure 645 can have a height that is less than the thickness of the glass core. In one embodiment, the driven RF structure 645 can be electrically isolated from the top ground plane 672 (e.g., by an insulator) or by providing holes through the top ground plane 672 around the periphery of the driven RF structure 645. The driven RF structure 645 may be electrically coupled to an RF signal source.

[0050] Referring now to FIG. 6B, a plan view of an RF system 670 that is a corner reflector antenna is shown, according to one embodiment. As shown, multiple TGVs 675 can form a V-shape around a driven RF structure 645. The TGVs 675 can be standard TGVs that penetrate the entire thickness of the glass core (not shown) and contact both a bottom ground plane 671 and a top ground plane 672. The driven RF structure 645 can be a blind RF structure 645 similar to any of the RF structures described in more detail herein. For example, the conductive portion of the driven RF structure 645 can have a height that is less than the thickness of the glass core. In one embodiment, the driven RF structure 645 can be electrically isolated from the top ground plane 672 (e.g., by an insulator) or by providing holes through the top ground plane 672 around the periphery of the driven RF structure 645. The driven RF structure 645 can be electrically coupled to an RF signal source.

[0051] Referring now to FIG. 6C , a plan view of an RF system 670 that is a Yagi-Uda antenna is shown, according to one embodiment. As shown, a reflecting TGV 676 may be provided on one side of the driven RF structure 645, and multiple directing TGVs 678 (677) are provided on the opposite side of the driven RF structure 645 from the reflecting TGV 676. The reflecting TGV 676 and the directing TGV 678 may be blind TGVs that pass only partially through the entire thickness of the glass core (not shown). That is, the TGVs 676 and 678 may only contact the top ground plane 672. The driven RF structure 645 may be a blind RF structure 645 similar to any of the RF structures described in more detail herein. For example, the conductive portion of the driven RF structure 645 may have a height that is less than the thickness of the glass core. In one embodiment, the driven RF structure 645 may be electrically isolated from the top ground plane 672 (e.g., by an insulator) or by providing holes through the top ground plane 672 around the perimeter of the driven RF structure 645. The driven RF structure 645 may be electrically coupled to an RF signal source.

[0052] 6A-6C provide examples of RF antenna systems formed using the RF structures described herein, in accordance with various embodiments. However, it should be understood that many different antenna systems can be fabricated through various combinations and arrangements of RF structures similar to those described herein. Furthermore, while antenna structures for propagating and / or receiving wireless RF signals are shown, it should be understood that RF systems can also include filtering systems. Embodiments can also include RF systems having waveguiding structures (e.g., parallel plate waveguides, dielectric waveguides, substrate integrated waveguides) and / or passive RF structures (e.g., power dividers / combiners, phase shifters, impedance loads (R / L / C), or attenuators).

[0053] Referring now to FIG. 7 , a perspective view of a glass module 780 is shown, according to one embodiment. In one embodiment, the glass module 780 may include a glass piece 781 (either a single-layer glass piece or a multi-layer glass piece) having a composition similar to the glass core described in more detail herein. However, instead of being an entire package substrate core, the glass module 780 may be a smaller component suitable for integration in other portions of the package substrate (not shown). For example, the glass module 780 may be embedded in a build-up layer of the package substrate or may be disposed on the package substrate. The glass module 780 may be fabricated in a panel form factor using processes similar to those used to fabricate the glass core (described in more detail herein). After fabrication, the glass module 780 may be singulated from the panel and used elsewhere.

[0054] In one embodiment, one or more RF structures 745 (three are shown in FIG. 7 as an example) may be embedded within glass piece 781. RF structures 745 may be similar to one or more of the RF structures described in more detail herein. In one embodiment, RF structures 745 may include a conductive portion having a height H that is less than a thickness T of glass piece 781.

[0055] 8A-8L, a series of cross-sectional views are shown depicting a process for forming RF structures similar to one or more of those described in more detail herein, according to one embodiment. While several specific examples of different RF structures are shown in FIGS. 8A-8L, it should be understood that any of the RF structures described herein can be fabricated using similar operations (which may include adding one or more additional patterning loops, removing one or more patterning loops, depositing a different dielectric material, altering the etch depth of one or more of the patterning loops, etc.).

[0056] 8A, a cross-sectional view of a portion of a package substrate 800 during fabrication is shown, according to one embodiment. In particular, an unpatterned glass core 840 is shown. The glass core 840 may be similar to any of the glass cores described in more detail herein.

[0057] 8B , a cross-sectional view of a portion of package substrate 800 after via opening is shown, according to one embodiment. In one embodiment, via opening 831 may extend completely through the thickness of glass core 840. Via opening 832 may extend partially through the thickness of glass core 840. With respect to via openings 832, each via opening 832 is vertically stacked above the via opening 832 on the other side of glass core 840. However, in other embodiments, one or more of via openings 832 may not be vertically stacked. As used herein, via openings 831 and / or via openings 832 may also be referred to as holes.

[0058] In the illustrated embodiment, the sidewalls 833 of via openings 831 and 832 may be sloped. For example, via opening 831 may have sidewalls 833 that slope to form an hourglass-shaped cross-section, and via opening 832 may have sidewalls 833 that converge with respect to a point at the bottom of via opening 832. The sloped profile of sidewalls 833 may be a characteristic feature of a laser assisted etching process. For example, a laser may be used to modify the microstructure and / or chemical structure of the glass within glass core 840. A modified glass region may be more susceptible to a given etching chemistry used to form via openings 831 and 832. The depth of via openings 831 and 832 may be controlled by controlling the dose of laser light at different positions. Thus, a via opening 832 having a particular depth into (but not completely through) the thickness of glass core 840 may be selected to set the desired dimensions of the resulting RF structure. Thus, optimization of RF characteristics (e.g., quality factor, center frequency, etc.) may be enabled for a wide range of RF structures.

[0059] While sloped sidewalls 833 are shown in FIGS. 8A-8L, in some embodiments, substantially vertical sidewalls may also be provided. Additionally, while previous embodiments have shown substantially vertical sidewalls, any of the embodiments described herein may be fabricated using via openings similar to those shown in FIGS. 8A-8L. That is, any RF structure described herein may include sloped sidewalls that form a tapered cross-section (with or without a point), or an hourglass-shaped cross-section.

[0060] 8C , a cross-sectional view of a portion of package substrate 800 after via openings 831 and 832 have been metallized is shown, according to one embodiment. The metallized features may include RF structure 845 (which extends completely through the thickness of glass core 840) and RF structure 846 (which extends partially through the thickness of glass core 840). The metallization process may be a plating process (e.g., electroplating) or any other suitable deposition process (e.g., physical vapor deposition (PVD), chemical vapor deposition (CVD), etc.). Any overburden above or below glass core 840 may be polished away (e.g., using a chemical-mechanical polishing (CMP) process).

[0061] 8D , there is shown a cross-sectional view of a portion of package substrate 800 after first resist layer 820 has been deposited and patterned to form openings 821, according to one embodiment. As shown, openings 821 may be formed over one or more of RF structure 845 and / or RF structure 846. First resist layer 820 may be provided over both the top and bottom of glass core 840.

[0062] 8E, a cross-sectional view of a portion of package substrate 800 after a first etching process is shown, according to one embodiment. The first etching process may recess the exposed surfaces of RF structures 845B, 845C, and 846B. RF structures 845A and 846A may be completely covered by resist layer 820 and are not recessed.

[0063] 8F, a cross-sectional view of a portion of package substrate 800 after first resist layer 820 has been removed is shown, according to one embodiment. In one embodiment, first resist layer 820 may be removed using a resist stripping process, etc.

[0064] Referring now to FIG. 8G , a cross-sectional view of a portion of a package substrate 800 after a second resist layer 822 has been deposited and patterned to form an opening 823 is shown, according to one embodiment. The second resist layer 822 may be provided both above and below the glass core 840 in some embodiments. In one embodiment, the opening 823 may be provided over one or more of the RF structures previously etched in FIG. 8E . That is, a surface that was once recessed may be recessed again. This allows for the formation of RF structures of multiple different heights within the same glass core 840. Alternatively, the RF structures exposed in FIG. 8G may be completely removed in a subsequent etching process. While a double etching process is described herein, it should be understood that a single etching loop may be used, or multiple etching loops may be used to provide RF structures of any number of different heights within a single glass core 840.

[0065] 8H, a cross-sectional view of a portion of package substrate 800 after a second etching process is shown, according to one embodiment. In the illustrated embodiment, the second etching process is a removal process that completely removes the RF structures from the via openings. For example, in FIG. 8H, one of via openings 831 and two of via openings 832 have been removed.

[0066] 8I, a cross-sectional view of a portion of package substrate 800 after second resist layer 822 has been removed is shown, according to one embodiment. In one embodiment, second resist layer 822 may be removed by a resist stripping process, etc.

[0067] 8J, a cross-sectional view of a portion of package substrate 800 is shown after dielectric plugs 847, 848, 849, and 850 have been added into the exposed portions of the via openings, according to one embodiment. For example, dielectric plug 847 is disposed on the top surface of RF structure 845B, a pair of dielectric plugs 847 is disposed on RF structure 845C, dielectric plug 848 is disposed in fully voided via opening 831, dielectric plug 849 is disposed in each fully voided via opening 832, and dielectric plug 850 is disposed on RF structure 846B.

[0068] As can be seen, because the plugs 847-850 and the corresponding RF structures fill the same via openings, the plugs and RF structures have substantially coincident centerlines, and thus the plugs and corresponding RF structures can be considered to be vertically stacked.

[0069] The dielectric material for the plugs 847-850 may be deposited using a molding process, a lamination process, or any other deposition process. Any overburden may be removed using a CMP process, etc. In the illustrated embodiment, all of the plugs 847-850 are the same material. In other embodiments, different dielectric materials may be provided over different RF structures by providing multiple masking and plug deposition process loops.

[0070] 8K, there is shown a cross-sectional view of a portion of package substrate 800 after dielectric layers 841 and 842 have been provided over glass core 840 and patterned to form opening 843, according to one embodiment. For example, dielectric layers 841 and 842 may be deposited by a lamination process, etc. In one embodiment, opening 843 may be formed using a laser patterning process, a chemical etching process, etc.

[0071] 8L, a cross-sectional view of a portion of package substrate 800 is shown after metal layers 805A and 805B have been added over dielectric layers 841 and 842. According to one embodiment, the deposition of metal layers 805A and 805B may also fill opening 843 to form via 808 and provide electrical contact to one or more of RF structures 845 and / or 846. Metal layers 805A and 805B may also be patterned to provide electrical isolation, if necessary.

[0072] 9, a process flow diagram is shown for a process 980 for forming RF structures in a glass core, according to one embodiment. In one embodiment, process 980 can be modified using one or more operations similar to those described above with respect to FIGS. 8A-8L (or elsewhere herein) to provide RF structures according to any of those described in more detail herein.

[0073] In one embodiment, process 980 may begin with operation 981, which includes forming a via opening through the thickness of the glass substrate. In one embodiment, the via opening may be formed using a laser-assisted patterning process.

[0074] In one embodiment, process 980 may continue to operation 982, which includes depositing a via in the via opening. In one embodiment, the via may be a conductive via, deposited using any suitable process. The via may be planarized so that its surface is substantially flush with the top and bottom of the glass substrate.

[0075] In one embodiment, process 980 may continue to operation 983, which includes recessing one or both ends of the via. Recessing may be performed through depositing a resist layer on the top and bottom surfaces of the glass substrate. Openings through the resist layer are then formed over one or both ends of the via that are desired to be recessed. An etchant is then used to selectively recess the exposed ends of the via.

[0076] In one embodiment, process 980 may continue with operation 984, which includes depositing a plug above and / or below the via in the via opening. The plug may be a dielectric material provided by any suitable deposition process. In embodiments having recessed top and bottom surfaces, the upper plug may be a different dielectric material than the lower plug.

[0077] In one embodiment, process 980 may continue to operation 985, which may include electrically coupling the vias to traces above and / or below the glass substrate. The traces may be separated from the glass substrate by a dielectric layer. In such an embodiment, vias may be provided through the dielectric layer to electrically couple the vias to the traces. While operation 985 describes electrical coupling to the traces, it should be understood that an embodiment may end after operation 984. That is, the recessed and plugged vias may be electrically floating.

[0078] 10, a cross-sectional view of an electronic system 1090 is shown, according to one embodiment. The electronic system 1090 may include a substrate 1091, such as a printed circuit board (PCB), a motherboard, etc. The substrate 1091 may be coupled to the package substrate 1000 through a second level interconnect (SLI) 1092. The SLI 1092 may include solder joints, pins, sockets, etc.

[0079] In one embodiment, the package substrate 1000 can be similar to any of the package substrates described in more detail herein. For example, the package substrate 1000 can include a glass core 1040 with build-up layers 1030 above and below the glass core 1040. In one embodiment, the glass core 1040 can include any number of RF structures 1045 or 1046 similar to any of the embodiments described in more detail herein. For example, the RF structure 1045 can include a first conductive region 1045A having a height less than the thickness of the glass core 1040 and a second dielectric plug region 1045B. The RF structure 1046 can include a first conductive region 1046A and a second dielectric plug region 1046B.

[0080] In one embodiment, one or more dies 1095 may be electrically coupled to the package substrate 1000 through first level interconnects (FLIs) 1094. The FLIs 1094 may include solder bumps, copper bumps, hybrid bonding interfaces, and / or the like. In one embodiment, the dies 1095 may be any type of die, such as a central processing unit (CPU), a graphics processing unit (GPU), an XPU, a communications die, a memory die, etc.

[0081] In one embodiment, RF structures 1045 and / or 1046 may be used to provide wireless communication coupling between components within an electronic system. For example, one or more of RF structures 1045 and / or 1046 may be wirelessly coupled to one or more of die 1095, different RF structures 1045 and / or 1046, and / or any other components in electronic system 1090. Additionally, one or more of RF structures 1045 and / or 1046 may be wirelessly coupled to one or more components external to electronic system 1090.

[0082] 11 illustrates a computing device 1100 according to one embodiment of the present disclosure. The computing device 1100 houses a substrate 1102. The substrate 1102 may include several components, including, but not limited to, a processor 1104 and at least one communications chip 1106. The processor 1104 is physically and electrically coupled to the substrate 1102. In some implementations, the at least one communications chip 1106 is also physically and electrically coupled to the substrate 1102. In further implementations, the communications chip 1106 is part of the processor 1104.

[0083] These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, graphics processors, digital signal processors, cryptographic processors, chipsets, antennas, displays, touchscreen displays, touchscreen controllers, batteries, audio codecs, video codecs, power amplifiers, Global Positioning System (GPS) devices, compasses, accelerometers, gyroscopes, speakers, cameras, and mass storage devices (hard disk drives, compact discs (CDs), digital versatile discs (DVDs), etc.).

[0084] The communications chip 1106 enables wireless communication for transferring data to and from the computing device 1100. The term “wireless” and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc. that may communicate data through the use of modulated electromagnetic radiation over a non-solid medium. The term does not imply that the associated devices do not include wires, although in some embodiments they may not. The communications chip 1106 may implement any of several wireless standards or protocols, including, but not limited to, Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, Long Term Evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, and any other wireless protocols designated as 3G, 4G, 5G, and beyond. The computing device 1100 may include multiple communication chips 1106. For example, a first communication chip 1106 may be dedicated to short-range wireless communications, such as Wi-Fi and Bluetooth, and a second communication chip 1106 may be dedicated to long-range wireless communications, such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

[0085] The processor 1104 of the computing device 1100 includes an integrated circuit die packaged within the processor 1104. In some implementations of the present disclosure, the integrated circuit die of the processor may be part of an electronic package that includes a glass core with an embedded RF structure having one or more portions with a height less than the thickness of the glass core according to embodiments described herein. The term "processor" may refer to any device or part of a device that processes electronic data from registers and / or memory and converts the electronic data into other electronic data that may be stored in registers and / or memory.

[0086] The communications chip 1106 also includes an integrated circuit die packaged within the communications chip 1106. According to another implementation of the present disclosure, the integrated circuit die of the communications chip may be part of an electronic package that includes a glass core with an embedded RF structure having one or more portions with a height that is less than the thickness of the glass core according to embodiments described herein.

[0087] In one embodiment, computing device 1100 may be part of any device. For example, computing device 1100 may be part of a personal computer, a server, a mobile device, a tablet, an automobile, etc. That is, computing device 1100 is not limited to being used in any particular type of system, but rather computing device 1100 may be included in any device that can benefit from computing functionality.

[0088] The above description of illustrated implementations of the disclosure, including what is described in the Abstract, is not intended to be exhaustive or to limit the disclosure to the precise form disclosed. While specific implementations and examples of the disclosure have been described herein for illustrative purposes, various equivalent modifications are possible within the scope of the disclosure, as those skilled in the art will recognize.

[0089] These changes can be made to the present disclosure in light of the above detailed description. The terms used in the following claims should not be construed to limit the disclosure to the specific implementations disclosed in the specification and claims. Rather, the scope of the present disclosure is to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation.

[0090] Example 1: A device comprising: a substrate that is an amorphous glass layer; a hole in the substrate; and a structure in the hole that includes a first portion comprising a first material composition and a second portion comprising a second material composition, the first portion and the second portion being vertically stacked within the hole.

[0091] Example 2: The apparatus of example 1, wherein the first portion has a first height, the second portion has a second height, and the first height is different from the second height.

[0092] Example 3: The device of Example 1, wherein the first material composition comprises a conductive material and the second material composition comprises a dielectric material.

[0093] Example 4: The device of example 3, wherein the substrate has a first dielectric constant and the second material composition has a second dielectric constant, and the first dielectric constant is different from the second dielectric constant.

[0094] Example 5: The device of Examples 1-4, wherein the structure further comprises a third portion, the second portion being between the first portion and the third portion, and the third portion comprising the first material composition.

[0095] Example 6: The device of Examples 1-5, wherein the holes extend completely through the thickness of the substrate.

[0096] Example 7: The device of Examples 1-6, wherein the depth of the holes is less than the thickness of the substrate.

[0097] Example 8: The device of Examples 1-7, further comprising: a second hole in the substrate adjacent to the hole; and a second structure in the second hole, the second structure comprising a third portion including the first material composition and a fourth portion including the second material composition, the third portion and the fourth portion being vertically stacked within the second hole.

[0098] Example 9: The device of example 8, wherein the height of the third portion is different from the height of the first portion.

[0099] Example 10: The device of any one of Examples 1-9, wherein the structure is an antenna structure, a filter, a waveguiding structure, and / or a passive RF structure.

[0100] Example 11: An apparatus comprising: a substrate, the substrate being an amorphous glass layer; a first layer above the substrate, the first layer being electrically conductive; a second layer below the substrate, the second layer being electrically conductive; and a radio frequency (RF) system at least partially embedded in the substrate, the RF system including: a first via into the substrate, the height of the first via being less than a thickness of the substrate, the first via being electrically coupled to an RF signal source; and a plurality of second vias into the substrate, the plurality of second vias being each electrically coupled to one or both of the first layer and the second layer.

[0101] Example 12: The apparatus of example 11, wherein the RF system is an antenna.

[0102] Example 13: The apparatus of example 12, wherein the antenna is an open-ended waveguide antenna, a corner reflector antenna, or a Yagi-Uda antenna.

[0103] Example 14: The apparatus of any of Examples 11-13, wherein the RF system is a filter, a waveguiding structure, and / or a passive RF structure.

[0104] Example 15: The device of Examples 11-14, wherein the first via is in a hole that penetrates the entire thickness of the substrate, a plug fills a portion of the hole, and the plug is a dielectric material.

[0105] Example 16: The apparatus of Examples 11-15, wherein the first layer and the second layer are configured to be grounded.

[0106] Example 17: The device of Examples 11-16, wherein the first via is within 100 μm of an edge of the substrate.

[0107] Example 18: The device of Examples 11-17, further comprising a first dielectric layer above the substrate, a second dielectric layer below the substrate, a substrate bonded to the second dielectric layer, and a die bonded to the first dielectric layer.

[0108] Example 19: An apparatus comprising: a substrate, the substrate being a glass layer; a first radio frequency (RF) antenna portion embedded in the substrate, the first RF antenna portion electrically coupled to a conductive trace above or below the substrate; and a second RF antenna portion embedded in the substrate, the second RF antenna portion being electrically floating and the first RF antenna portion configured to be communicatively coupled to the second RF antenna portion.

[0109] Example 20: The apparatus of example 19, wherein the first RF antenna portion includes a conductive via portion and a dielectric plug portion over the conductive via portion.

Claims

1. 1. An apparatus comprising: a substrate, which is an amorphous glass layer; a hole in the substrate; a structure in the hole, a first portion comprising a first material composition; and a second portion comprising a second material composition, said first portion and said second portion being vertically stacked within said hole; a structure including: An apparatus comprising:

2. the first portion has a first height; the second portion has a second height; and the first height is different from the second height; 10. The apparatus of claim 1.

3. the first material composition includes an electrically conductive material; and the second material composition comprises a dielectric material; 10. The apparatus of claim 1.

4. the substrate has a first dielectric constant; the second material composition has a second dielectric constant; and the first dielectric constant is different from the second dielectric constant; 4. The apparatus of claim 3.

5. The structure may further comprise: The third part is the second portion is between the first portion and the third portion; the third portion comprises the first material composition; The third part, The apparatus of claim 1 , comprising:

6. the holes extend completely through the thickness of the substrate; 10. The apparatus of claim 1.

7. The depth of the hole is less than the thickness of the substrate.

10. The apparatus of claim 1.

8. The apparatus further comprises: a second hole in the substrate adjacent to the hole; a second structure in the second hole, a third portion comprising the first material composition; and a fourth portion including the second material composition, the third portion and the fourth portion being vertically stacked within the second bore; a second structure comprising: The apparatus of claim 1 , comprising:

9. The height of the third portion is different from the height of the first portion.

9. The apparatus of claim 8.

10. the structure is an antenna structure, a filter, a waveguiding structure, and / or a passive RF structure; 10. Apparatus according to any one of claims 1 to 9.

11. 1. An apparatus comprising: a substrate, which is an amorphous glass layer; a first layer on the substrate, the first layer being electrically conductive; a second layer below the substrate, the second layer being electrically conductive; a radio frequency (RF) system at least partially embedded within the substrate; Equipped with The RF system includes: a first via into the substrate, the height of the first via being less than a thickness of the substrate, the first via being electrically coupled to an RF signal source; a plurality of second vias into the substrate, the plurality of second vias being electrically coupled to one or both of the first layer and the second layer, respectively; Including, Device.

12. the RF system is an antenna; 12. The apparatus of claim 11.

13. The antenna is an open-ended waveguide antenna, a corner reflector antenna, or a Yagi-Uda antenna.

13. The apparatus of claim 12.

14. the RF system is a filter, a waveguiding structure, and / or a passive RF structure; 12. The apparatus of claim 11.

15. the first via is in a hole that penetrates the entire thickness of the substrate; a plug filling a portion of the hole; and the plug is a dielectric material; 12. The apparatus of claim 11.

16. The first layer and the second layer are configured to be grounded.

12. The apparatus of claim 11.

17. the first via is within 100 μm of an edge of the substrate; 12. The apparatus of claim 11.

18. The apparatus further comprises: a first dielectric layer over the substrate; a second dielectric layer below the substrate; a substrate bonded to the second dielectric layer; a die bonded to the first dielectric layer; Including, 18. Apparatus according to any one of claims 11 to 17.

19. 1. An apparatus comprising: a substrate, which is a glass layer; a first radio frequency (RF) antenna portion embedded in the substrate; electrically coupled to conductive traces above or below the substrate; a first RF antenna portion; a second RF antenna portion embedded in the substrate; the second RF antenna portion is electrically floating; the first RF antenna portion is configured to be communicatively coupled to the second RF antenna portion. a second RF antenna portion; and An apparatus comprising:

20. The first RF antenna portion a conductive via portion and a dielectric plug portion over the conductive via portion; 20. The apparatus of claim 19, comprising:

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