Semiconductor module

Abstract

To provide a semiconductor module which stably controls high power and can efficiently radiate heat generated due to use of high power.SOLUTION: A semiconductor module which controls high power and radiates heat generated due to high power includes: a multilayer insulating substrate 110 which includes at least two metal layers 111 insulated from each other and an insertion groove 112 formed such that at least one first semiconductor component 120 is inserted therein, one face or other face of the at least one first semiconductor component 120 being electrically connected to the metal layers 111 via a bonding layer 113; an insulating material 130 surrounding at least two surfaces of the first semiconductor component 120 in the insertion groove 112; radiation substrates 140A and 140B electrically or structurally bonded to one surface or the other surface of the at least one first semiconductor component 120; and at least one second semiconductor component 150 installed on an upper surface, a lower surface, or both upper and lower surfaces of the multilayer insulating substrate 110. A depth D of the insertion groove 112 is greater than a thickness T of the first semiconductor component 120.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a semiconductor module, and more particularly to a semiconductor module that controls high power and dissipates heat generated by high power. More particularly, the present invention relates to a semiconductor module that combines a multilayer insulating substrate having a relatively thick metal pattern with a heat dissipation substrate to stably control high power and efficiently dissipate heat generated by the use of high power, thereby ensuring electrical and structural stability. [Background technology]

[0002] Generally, a semiconductor package is manufactured by mounting one or more semiconductor chips on a lead frame or a printed circuit board, sealing the chips with a sealing resin, and then mounting the chips on a motherboard or a printed circuit board.

[0003] On the other hand, as electronic devices become faster, have larger capacities, and are more highly integrated, there is a demand for smaller, lighter, and more multifunctional power elements to be used in electronic devices.

[0004] For this reason, a power module package has been proposed in which multiple power semiconductor chips and control semiconductor chips are integrated into a single semiconductor chip.

[0005] For example, as shown in FIG. 1, a power module package according to the prior art has a laminated structure of a first metal layer 11, a ceramic insulating layer 12, and a second metal layer 13, and the second metal layer 13 is generally a relatively thick metal layer having a thickness of 0.1 mm to 1.5 mm so that high power can be applied.

[0006] That is, the power semiconductor chip 14 is mounted on the second metal layer 13, and the control semiconductor chip 16, which has a relatively smaller mounting area than the power semiconductor chip 14, is mounted on the third metal layer 15 formed separately from the second metal layer 13. However, although the high temperature heat generated in the power semiconductor chip 14 during operation must be effectively dissipated, the heat cannot be dissipated efficiently due to the control semiconductor chip 16 arranged adjacent to it, and there are limitations in ensuring thermal stability or electrical stability.

[0007] Therefore, a technology is required that can design a PCB board and a heat dissipation board on which semiconductor components are mounted through an embedded semiconductor module structure, allowing for the application of high power through metal patterns and efficient heat dissipation. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Korean Patent Publication No. 10-2481099 (Composite semiconductor package manufacturing method, published on December 27, 2022) [Patent Document 2] Korean Patent Publication No. 10-2332362 (Ultra-thin embedded semiconductor device package and manufacturing method thereof, published on December 1, 2021) Summary of the Invention [Problem to be solved by the invention]

[0009] The present invention has been made in consideration of the above circumstances, and its object is to provide a semiconductor module that can stably control high power by combining a multilayer insulating substrate with a relatively thick metal pattern and a heat dissipation substrate, and can efficiently dissipate heat generated by using high power, thereby ensuring electrical and structural stability. [Means for solving the problem]

[0010] In order to achieve the above-mentioned object, an embodiment of the present invention provides a semiconductor module including: a multilayer insulating substrate composed of two or more metal layers insulated from each other and an insertion groove formed so that one or more first semiconductor components can be inserted, wherein one or other surfaces of the one or more first semiconductor components are electrically connected to the metal layer via a bonding layer; an insulating material surrounding two or more surfaces of the first semiconductor component within the insertion groove; a heat dissipation substrate electrically or structurally bonded to one or other surfaces of the one or more first semiconductor components; and one or more second semiconductor components mounted on the upper surface, lower surface, or upper and lower surfaces of the multilayer insulating substrate, wherein the depth of the insertion groove is greater than the thickness of the first semiconductor components.

[0011] Here, the depth of the insertion groove may be 20 μm or more, and the thickness of the metal layer may be 0.1 mm or more.

[0012] The metal layer of the multilayer insulating substrate may be made of a Cu material or a metal material containing 50% or more of a Cu component.

[0013] Furthermore, the multilayer insulating substrate may be a PCB.

[0014] The heat dissipation substrate may also include one or more insulating layers.

[0015] Furthermore, the insulating layer can be Al2O3, AlN, Si3N4 or ZTA.

[0016] In this case, the thermal conductivity of the insulating layer may be 2 W / mK to 30 W / mK.

[0017] The heat dissipation substrate may further include heat dissipation fins for increasing heat dissipation efficiency using air or cooling water.

[0018] Here, the heat dissipation fins may be bonded to one surface of the heat dissipation substrate using a conductive or non-conductive adhesive, or by ultrasonic bonding.

[0019] The heat dissipation device may further include a water jacket structurally joined to the heat dissipation board to allow cooling water to flow through the heat dissipation fins.

[0020] The first semiconductor component may be a power semiconductor chip or a compound semiconductor chip, including a MOSFET, an IGBT, or a diode.

[0021] Furthermore, the insulating material surrounding the first semiconductor component is a liquid insulating material containing an epoxy component, and can be hardened at 50° C. or higher.

[0022] Additionally, the insulating material surrounding the first semiconductor component may include a silicon component.

[0023] Furthermore, the heat dissipation substrate may include an upper metal layer, and a metal protrusion for bonding to one surface or the other surface of the first semiconductor component may be formed on a surface of the upper metal layer.

[0024] The bonding layer used for bonding between the multilayer insulating substrate and one surface or the other surface of the first semiconductor component may contain 50% or more of Ag, Cu, or Ag and Cu.

[0025] Furthermore, the one or more first semiconductor components bonded to the multilayer insulating substrate or the heat dissipation substrate can be bonded by a sintering or soldering process.

[0026] The one or more second semiconductor components can be mounted on the top surface, bottom surface, or both top and bottom surfaces of the multilayer insulating substrate using a bonding layer containing 50% or more of Ag, Cu, or Ag and Cu.

[0027] Furthermore, one or more of the metal layers of the multi-layer insulating substrate can be electrically connected to a drain terminal of the first semiconductor component.

[0028] In addition, one or more of the metal layers of the multilayer insulating substrate may include a protruding metal layer that extends and is exposed inside the insertion groove.

[0029] Here, the protruding metal layer may be bonded to the heat dissipation substrate using a conductive or non-conductive adhesive, or may be directly bonded to the heat dissipation substrate using ultrasonic waves.

[0030] Furthermore, the one or more second semiconductor components may be gate drive ICs that drive gates of the first semiconductor components.

[0031] In this case, the one or more second semiconductor components can be mounted on the top surface, bottom surface, or both surfaces of the multilayer insulating substrate using solder containing Sn.

[0032] Furthermore, the thickness of the metal layer of the multilayer insulating substrate electrically connected to one side or the other side of the first semiconductor component may be thicker than the thickness of the metal layer of the multilayer insulating substrate electrically connected to the second semiconductor component.

[0033] Furthermore, metal posts may be bonded between one surface or the other surface of the one or more first semiconductor components and the opposing surface of the heat dissipation substrate, respectively.

[0034] The first semiconductor component may include a package structure containing a semiconductor chip, two or more electrical terminals, and an insulating resin material, and the electrical terminals may be partially or completely exposed on the top or bottom surface of the package.

[0035] Here, the first semiconductor component may be manufactured by a transfer molding method.

[0036] Furthermore, the multilayer insulating substrate may further include an insulating layer, and the heat dissipation substrate may be electrically or structurally bonded to the metal layer, the insulating layer, or the insulating layer and the metal layer of the multilayer insulating substrate.

[0037] Furthermore, a portion of the heat dissipation substrate can be inserted into and bonded to the multilayer insulating substrate.

[0038] Meanwhile, the semiconductor module can be used in a power conversion device such as an inverter or a converter. [Effects of the Invention]

[0039] According to the present invention, by combining a multilayer insulating substrate with a relatively thick metal pattern and a heat dissipation substrate, it is possible to stably control high power due to the characteristics of being applied to a power conversion device, and it is possible to efficiently dissipate heat generated by the use of high power, thereby ensuring electrical and structural stability. [Brief explanation of the drawings]

[0040] [Figure 1] FIG. 1 illustrates a semiconductor module according to the prior art. [Figure 2] 1A and 1B are diagrams illustrating a first example of a semiconductor module according to an embodiment of the present invention. [Figure 3] 10A and 10B are diagrams illustrating a second example of a semiconductor module according to an embodiment of the present invention. [Figure 4] 10A and 10B are diagrams illustrating a third example of a semiconductor module according to an embodiment of the present invention. [Figure 5] 5 is a view showing the first semiconductor component in the third example of FIG. 4 in an isolated state. FIG. [Figure 6] 10A and 10B are diagrams illustrating a fourth example of a semiconductor module according to an embodiment of the present invention. [Figure 7] 7 is a diagram showing an arrangement structure of the first semiconductor component in the fourth example of FIG. 6 in an isolated state. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0041] Hereinafter, an embodiment of the present invention having the above-mentioned features will be described in more detail with reference to the accompanying drawings.

[0042] A semiconductor module according to an embodiment of the present invention includes a multilayer insulating substrate 110 which is composed of two or more metal layers 111 insulated from each other and an insertion groove 112 formed so that one or more first semiconductor components 120 can be inserted therein, and in which one or both sides of the one or more first semiconductor components 120 are electrically connected to the metal layer 111 via a bonding layer 113; an insulating material 130 which surrounds two or more sides of the first semiconductor components 120 within the insertion groove 112; heat dissipation substrates 140A, 140B which are electrically or structurally bonded to one or both sides of the one or more first semiconductor components 120; and one or more second semiconductor components 150 which are mounted on the top, bottom, or top and bottom sides of the multilayer insulating substrate 110; and the depth D of the insertion groove 112 is greater than the thickness T of the first semiconductor components 120, thereby enabling high power to be controlled and heat generated by high power to be dissipated.

[0043] The semiconductor module having the above-described configuration will be described in detail below with reference to FIGS.

[0044] First, referring to Figures 2, 3, 4 and 6, the multilayer insulating substrate 110 is composed of two or more metal layers 111, such as an upper metal layer 111a and a lower metal layer 111b, which are insulated from each other, an insulating layer 111c that insulates the two or more metal layers 111 from each other, and an insertion groove 112 formed so that one or more first semiconductor components 120 can be inserted.One or the other side of one or more first semiconductor components can be electrically connected to the surface of any one of the metal layers 111 via a bonding layer 113, so that an electrical signal can be applied.

[0045] Here, the thickness of the metal layer 111 is at least 0.2 mm, and the thickness T of each of the metal layers 111a, 111b is 0.1 mm or more, so that the first semiconductor component 120 or the second semiconductor component 150 can stably control high power, and each of the metal layers 111a, 111b can be electrically connected to two or more terminals of the first semiconductor component 120 or the second semiconductor component 150, and can be electrically connected to the source terminal, gate terminal and / or drain terminal.

[0046] That is, as shown enlarged in FIG. 2, the depth D of the insertion groove 112 of the multilayer insulating substrate 110 can be formed deeper than the thickness T of the first semiconductor component 120, thereby forming an embedded semiconductor module structure. To this end, preferably, the depth D of the insertion groove 112 is 20 μm or more, and the thickness of each metal layer 111 is 0.1 mm or more. The depth D of the insertion groove 112 and the thickness of each metal layer 111 in the first example of FIG. 2 can be similarly applied to the second example of FIG. 3, the third example of FIG. 4, and the fourth example of FIG. 6.

[0047] In addition, the first semiconductor component 120 is a power semiconductor chip or a compound semiconductor chip including a MOSFET, an IGBT, or a diode, and the insulating material 130 surrounding the first semiconductor component 120 is a liquid insulating material 130 including an epoxy component. Through a curing process, the liquid insulating material 130 hardens at 50°C or higher to stably insulate the first semiconductor component 120, blocking air breakdown and ensuring insulation reliability.

[0048] Here, the insulating material 130 surrounding the first semiconductor component 120 may contain a silicon component to ensure good insulating properties, or may contain a thermally conductive silicon component to ensure good insulating properties and thermal conductivity.

[0049] Furthermore, the metal layer 111 of the multilayer insulating substrate 110 is made of a Cu material or a metal material containing 50% or more of Cu, and can provide good electrical conductivity and thermal conductivity, and the multilayer insulating substrate 110 can be a PCB (Printed Circuit Board).

[0050] Furthermore, as in the first example shown in FIG. 2, one or more metal layers 111a, 111b of the multi-layer insulating substrate 110 can be electrically connected to the source and drain terminals of the first semiconductor component 120 that supplies high power.

[0051] In addition, the bonding layer 113 used to bond between the multilayer insulating substrate 110 and one or both sides of the first semiconductor component 120 may contain 50% or more of Ag, Cu, or Ag and Cu to enhance electrical conductivity and thermal conductivity.

[0052] On the other hand, as in the second example shown in Figure 3, one or more metal layers 111 of the multilayer insulating substrate 110 include a protruding metal layer 114 that extends and is exposed inside the insertion groove 112, and the protruding metal layer 114 can be bonded to the upper metal layer 141 of the heat dissipation substrate 140A to connect with the first semiconductor component 120.

[0053] For example, the protruding metal layer 114 can be bonded to the upper metal layer 141 of the heat dissipation substrates 140A, 140B using a conductive or non-conductive adhesive 114a to be electrically or structurally connected, or can be directly bonded to the upper metal layer 141 of the heat dissipation substrates 140A, 140B using ultrasonic waves.

[0054] That is, as in the first example of FIG. 2, the lower metal layer 111b electrically connected to the second semiconductor component 150 or the upper metal layer 141 of the heat dissipation substrate 140A can be pre-applied with adhesive 114a to bond them together; as in the second example of FIG. 3, the lower metal layer 111b electrically connected to the second semiconductor component 150 or the upper metal layer 141 of the heat dissipation substrate 140A can be brought into close contact with each other, and then adhesive 114a can be applied later to bond them together, or they can be bonded together using ultrasound.

[0055] 4 and 5, the first semiconductor component 120 has a package structure consisting of a semiconductor chip 121, two or more electrical terminals 122, and an insulating resin material 123, and the electrical terminals 122 may be partially or completely exposed on the top or bottom surface of the package so that heat generated from the first semiconductor component 120 can be dissipated through the electrical terminals 122.

[0056] Here, the first semiconductor component 120 can be manufactured by compression molding with the insulating resin agent 123 using a transfer molding method.

[0057] Next, referring to Figures 2, 3, 4 and 6, the insulating material 130 surrounds two or more sides of the first semiconductor component 120 within the insertion groove 112 to electrically insulate the first semiconductor component 120.

[0058] Next, referring to Figures 2, 3, 4 and 6, the heat dissipation substrates 140A, 140B are bonded to one or other surfaces of one or more first semiconductor components 120, and are bonded to the metal layer 111, the insulating layer 111c or the metal layer 111 and the insulating layer 111c of the multilayer insulating substrate 110 via the bonding layer 141a, so that heat generated when the first semiconductor component 120 is operated can be effectively dissipated to the outside, thereby ensuring electrical stability.

[0059] Specifically, the heat dissipation substrates 140A, 140B may include a lower heat dissipation substrate 140A bonded to one side of the first semiconductor component 120 via a bonding layer 144, as in the first example of Figure 2, or may include a lower heat dissipation substrate 140A bonded to one side of the first semiconductor component 120 via a bonding layer 144 and an upper heat dissipation substrate 140B bonded to the other side of the first semiconductor component 120 and / or the multilayer insulating substrate 110 via a bonding layer 145, as in the second example of Figure 3, the third example of Figure 4 and the fourth example of Figure 6.

[0060] Also, as in the first example of FIG. 2, the second example of FIG. 3, and the fourth example of FIG. 6, the lower heat dissipation substrate 140A or the upper heat dissipation substrate 140B may be an insulating substrate including an upper metal layer 141, a lower metal layer 142 structurally connected to one side or the other side of the first semiconductor component 120, and an insulating layer 143 interposed between the upper metal layer 141 and the lower metal layer 142.

[0061] Furthermore, as in the third example of Figure 4, the lower heat dissipation substrate 140A is an insulating substrate consisting of an upper metal layer 141, a lower metal layer 142, and an insulating layer 143 interposed between the upper metal layer 141 and the lower metal layer 142, which are structurally connected to one side of the first semiconductor component 120, and the upper heat dissipation substrate 140B may be a metal substrate including a lower metal substrate 142 which is structurally connected to the other side of the first semiconductor component 120 via an insulating bonding layer 146.

[0062] That is, one or more heat dissipation substrates 140A, 140B can be electrically or structurally bonded to the metal layers 111a, 111b, the insulating layer 111c, or the insulating layer 111c and the metal layers 111a, 111b of the multilayer insulating substrate 110.

[0063] Although not shown, portions of one or more of the heat dissipation substrates 140A, 140B may be inserted into and bonded to the multilayer insulating substrate 110. Alternatively, the heat dissipation substrates 140A, 140B may be attached to and bonded to the multilayer insulating substrate 110, or portions of the heat dissipation substrates 140A, 140B may be inserted into recessed grooves formed in the multilayer insulating substrate 110 and bonded to each other to enhance structural stability.

[0064] Furthermore, the heat dissipation substrates 140A and 140B have an insulating substrate structure including one or more insulating layers 143, and the insulating layer 143 may be Al2O3, AlN, Si3N4, or Zirconia Toughened Aluminum (ZTA), which have good thermal conductivity and wear resistance.

[0065] Specifically, the thermal conductivity of the insulating layer 143 is preferably 2 W / mK to 30 W / mK.

[0066] 2, 3, 4 and 6, heat dissipation fins 147 of various shapes and structures such as cylindrical and polygonal pillars are protruded from the heat dissipation substrates 140A and 140B to enhance heat dissipation efficiency by air-cooling or water-cooling using air, refrigerant gas, refrigerant fluid, or cooling water, thereby expanding the heat dissipation area and improving heat dissipation efficiency.

[0067] Here, the heat dissipation fins 147 may be bonded to one surface of the heat dissipation substrates 140A and 140B using a metal or non-metal bonding agent 147a or may have a protruding structure bonded by ultrasonic bonding.

[0068] For example, the heat dissipation fins 147 may be integrally formed with the lower metal layer 142 of the heat dissipation substrates 140A and 140B, or may be bonded using a metallic or non-metallic adhesive 147a, or may be attached using ultrasonic waves without an adhesive.

[0069] 6, the heat dissipation device may further include a water jacket 160 that is structurally joined to the heat dissipation substrates 140A and 140B and includes an inlet, an outlet, and a flow path formed so that the heat dissipation fins 147 are exposed and come into contact with the refrigerant gas or the cooling water, so as to allow the refrigerant gas, the refrigerant fluid, or the cooling water to flow through the heat dissipation fins 147, thereby further improving heat dissipation efficiency and electrical stability.

[0070] Furthermore, as shown in Figures 2 and 3, in the first and second examples, a metal convex portion 170 is formed protruding from a portion of the surface of the upper metal layer 141 of the heat dissipation substrates 140A, 140B, for bonding to one or the other side of the first semiconductor component 120 via the bonding layer 144, thereby further increasing the attachment accuracy of the first semiconductor component 120 and further improving the bonding reliability compared to attaching the first semiconductor component 120 to a flat upper metal layer 141.

[0071] 6 and 7, metal posts 148 may be electrically and structurally bonded between one or the other surfaces of one or more first semiconductor components 120 and the opposing surfaces of heat dissipation substrates 140A and 140B via bonding layers 148a, thereby increasing thermal conductivity and improving heat dissipation efficiency.

[0072] Next, referring to FIGS. 2, 3, 4 and 6, one or more second semiconductor components 150 are configured and mounted on the top surface, bottom surface, or both the top and bottom surfaces of the multi-layer insulating substrate 110.

[0073] Here, the one or more second semiconductor components 150 are gate drive ICs that drive the gates of the first semiconductor components 120, and the second semiconductor components 150 can be mounted on the multilayer insulating substrate 110 using solder containing Sn.

[0074] Meanwhile, referring to (b) of FIG. 3, the thickness T1 of the metal layer 111, e.g., the upper metal layer 111a, of the multilayer insulating substrate 110 electrically connected to one side or the other side of the first semiconductor component 120 is differentiated to be thicker than the thickness T2 of the metal layer 111, e.g., the upper metal layer 111a, electrically connected to the second semiconductor component 150, and is designed to differ depending on the magnitude of power applied to each semiconductor component 120, 150, thereby minimizing weight, reducing manufacturing costs, and enabling a compact configuration.

[0075] Meanwhile, one or more first semiconductor components 120 bonded to the multilayer insulating substrate 110 or the heat dissipation substrates 140A, 140B can be bonded by a sintering or soldering process. Referring to Figures 2, 3, 4 and 6, the bonding layer 151 used to bond one side or the other side of the second semiconductor component 150 can contain 50% or more of Ag, Cu, or Ag and Cu to enhance electrical conductivity and thermal conductivity.

[0076] In addition, the semiconductor modules of the above-mentioned examples can be used in a power conversion device such as an inverter or converter. For example, the power conversion device can be a device such as an inverter, converter, or OBC (On Board Charger) that drives a three-phase motor or converts or controls power. Since a considerable amount of heat is generated in the process of converting power into other power such as a specific current, a specific voltage, or a specific frequency, cooling can be efficiently performed through the heat dissipation substrate 140 of this embodiment.

[0077] Therefore, through the embedded semiconductor module structure described above, a multilayer insulating substrate with a relatively thick metal pattern is combined with a heat dissipation substrate, which allows for stable control of high power due to its characteristics when applied to a power conversion device, and efficiently dissipates heat generated by the use of high power, ensuring electrical and structural stability.

[0078] The embodiments described in this specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention and do not represent the technical ideas of the present invention, so it should be understood that there may be various equivalents and modifications that can replace them at the time of filing this application. [Explanation of symbols]

[0079] 110 Multilayer insulating substrate 111 Metal layer 112 Insertion groove 113 Bonding layer 120 First Semiconductor Component 121 Semiconductor Chip 122 Electrical Terminal 123 Insulating resin 130 Insulation 140A, 140B heat dissipation board 141 Upper metal layer 142 Lower metal layer 143 Insulating Layer 144 Bonding layer 145 Bonding layer 146 Insulating Bonding Layer 147 Heat dissipation fin 148 Metal Post 150 Secondary Semiconductor Components 151 Bonding layer 160 Water Jacket 170 Metal convex part

Claims

1. a multilayer insulating substrate including two or more metal layers insulated from each other and an insertion groove formed to receive one or more first semiconductor components, the one or more first semiconductor components being electrically connected to the metal layers via a bonding layer; an insulating material surrounding two or more surfaces of the first semiconductor component within the insertion groove; a heat dissipation substrate electrically or structurally bonded to one or the other surface of the one or more first semiconductor components; one or more second semiconductor components mounted on the top surface, bottom surface, or both top and bottom surfaces of the multilayer insulating substrate; The depth of the insertion groove is greater than the thickness of the first semiconductor component.

2. The depth of the insertion groove is 20 μm or more, 2. The semiconductor module according to claim 1, wherein the thickness of the metal layer is 0.1 mm or more.

3. The metal layer of the multilayer insulating substrate is 2. The semiconductor module according to claim 1, wherein the semiconductor module is made of a Cu material or a metal material containing 50% or more of Cu.

4. The multilayer insulating substrate comprises:

2. The semiconductor module according to claim 1, wherein the semiconductor module is a PCB.

5. The heat dissipation substrate is 10. The semiconductor module according to claim 1, further comprising one or more insulating layers.

6. The insulating layer is Al ２ O ３ , AlN, Si ３ N ４ 6. The semiconductor module according to claim 5, wherein the semiconductor module is made of a material selected from the group consisting of tungsten carbide (TTA) and zinc tin carbide (ZTA).

7. The thermal conductivity of the insulating layer is 6. The semiconductor module according to claim 5, wherein the thermal conductivity is 2 W / mK to 30 W / mK.

8. The heat dissipation substrate has:

2. The semiconductor module according to claim 1, further comprising a heat dissipation fin for increasing heat dissipation efficiency by using air or cooling water.

9. The heat dissipation fins are 9. The semiconductor module according to claim 8, wherein the heat dissipation substrate is bonded to one surface thereof using a conductive adhesive or a non-conductive adhesive, or by ultrasonic bonding.

10. 9. The semiconductor module according to claim 8, further comprising a water jacket structurally joined to the heat dissipation board and configured to allow cooling water to flow through the heat dissipation fins.

11. The first semiconductor component is 2. The semiconductor module according to claim 1, wherein the semiconductor module is a power semiconductor chip or a compound semiconductor chip including a MOSFET, an IGBT, or a diode.

12. The insulating material surrounding the first semiconductor component is 2. The semiconductor module according to claim 1, wherein the insulating material is a liquid material containing an epoxy component and hardens at a temperature of 50[deg.] C. or higher.

13. The insulating material surrounding the first semiconductor component is 2. The semiconductor module according to claim 1, further comprising a silicon component.

14. the heat dissipation substrate includes an upper metal layer; 2. The semiconductor module according to claim 1, wherein a metal projection is formed on a surface of the upper metal layer for bonding to one surface or the other surface of the first semiconductor component.

15. The bonding layer used for bonding between the multilayer insulating substrate and one surface or the other surface of the first semiconductor component is 2. The semiconductor module according to claim 1, wherein the semiconductor module contains 50% or more of Ag, Cu, or Ag and Cu.

16. The one or more first semiconductor components bonded to the multilayer insulating substrate or the heat dissipation substrate include:

2. The semiconductor module according to claim 1, wherein the semiconductor module is joined by a sintering or soldering process.

17. The one or more second semiconductor components 2. The semiconductor module according to claim 1, wherein the semiconductor module is mounted on the upper surface, the lower surface, or both the upper and lower surfaces of the multilayer insulating substrate using a bonding layer containing 50% or more of Ag, Cu, or Ag and Cu.

18. One or more of the metal layers of the multilayer insulating substrate are 2. The semiconductor module according to claim 1, wherein the first semiconductor component is electrically connected to a drain terminal of the first semiconductor component.

19. One or more of the metal layers of the multilayer insulating substrate are The semiconductor module according to claim 1 , further comprising a protruding metal layer extending and exposed inside the insertion groove.

20. The protruding metal layer is 20. The semiconductor module according to claim 19, wherein the semiconductor module is bonded to the heat dissipation substrate using a conductive or non-conductive adhesive, or is directly bonded to the heat dissipation substrate using ultrasonic waves.

21. The one or more second semiconductor components 2. The semiconductor module according to claim 1, wherein the first semiconductor component is a gate drive IC that drives a gate of the first semiconductor component.

22. The one or more second semiconductor components 22. The semiconductor module according to claim 21, wherein the semiconductor module is mounted on the top surface, bottom surface, or both surfaces of the multilayer insulating substrate using solder containing Sn.

23. The thickness of the metal layer of the multilayer insulating substrate electrically connected to one surface or the other surface of the first semiconductor component is:

2. The semiconductor module according to claim 1, wherein the thickness of the insulating substrate is greater than the thickness of the metal layer of the multilayer insulating substrate electrically connected to the second semiconductor component.

24. 2. The semiconductor module according to claim 1, wherein metal posts are bonded between one surface or the other surface of the one or more first semiconductor components and an opposing surface of the heat dissipation substrate.

25. The first semiconductor component is A package structure including a semiconductor chip, two or more electrical terminals, and an insulating resin material, The electrical terminal is 2. The semiconductor module according to claim 1, wherein the upper surface or the lower surface of the package is partially or completely exposed.

26. The first semiconductor component is 26. The semiconductor module according to claim 25, manufactured by a transfer molding method.

27. The multilayer insulating substrate further includes an insulating layer, The heat dissipation substrate is 2. The semiconductor module according to claim 1, wherein the semiconductor module is electrically or structurally bonded to the metal layer, the insulating layer, or the insulating layer and the metal layer of the multilayer insulating substrate.

28. A part of the heat dissipation substrate is 2. The semiconductor module according to claim 1, wherein the semiconductor module is inserted into and bonded to the multilayer insulating substrate.

29. The semiconductor module includes:

2. The semiconductor module according to claim 1, which is used in a power conversion device such as an inverter or a converter.

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