Substrate processing apparatus and gas supply method

Abstract

To suppress thermal influence from heat sources such as electrical components provided in a substrate processing apparatus, while preventing an increase in footprint, the substrate processing apparatus having a processing unit that processes a substrate and a transfer area in which a transfer unit that transfers the substrate to the processing unit is provided.SOLUTION: A substrate processing apparatus includes a processing unit that processes a substrate, a transfer area in which a transfer unit that transfers the substrate to the processing unit is provided, a duct that supplies air from an air source to the processing unit, an intake supply unit that takes in ambient air around the substrate processing apparatus and supplies the air to the transfer area, and a supply pipe that connects the duct and the intake supply unit so that the air from the air source flowing through the duct is also supplied to the transfer area.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a gas supply method. [Background technology]

[0002] Patent document 1 discloses a substrate processing apparatus for processing substrates, which includes a plurality of processing units that perform the same processing on the substrates, and an air pressure control means that controls the air pressure in the plurality of processing units so that the processing results in the plurality of processing units are approximately the same. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-24638 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology disclosed herein is a substrate processing apparatus having a processing unit for processing substrates and a transport area in which a transport unit is provided for transporting substrates to the processing unit, and suppresses an increase in footprint while suppressing thermal effects from heat sources such as electrical equipment provided in the apparatus. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus having a processing unit for processing a substrate and a transfer area provided with a transfer unit for transferring the substrate to the processing unit, the substrate processing apparatus including: a duct for supplying air from an air supply source to the processing unit; an intake supply unit for taking in air around the substrate processing apparatus and supplying the air to the transfer area; and a supply pipe connecting the duct and the intake supply unit so that the air from the supply source that has flowed through the duct is also supplied to the transfer area. and, [Effects of the Invention]

[0006] According to the present disclosure, in a substrate processing apparatus having a processing unit for processing substrates and a transport area provided with a transport unit for transporting substrates to the processing unit, it is possible to suppress the thermal effects from heat sources such as electrical equipment provided in the apparatus while suppressing an increase in footprint. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a plan view schematically illustrating an outline of the configuration of a coating and developing apparatus as a substrate processing apparatus. [Figure 2] FIG. 2 is a diagram schematically illustrating an internal configuration of a central portion in the depth direction of a coating and developing apparatus. [Figure 3] FIG. 2 is a diagram schematically illustrating an outline of the internal configuration of the front side of the coating and developing apparatus. [Figure 4] FIG. 2 is a diagram schematically illustrating an outline of the internal configuration at the rear side of the coating and developing apparatus. [Figure 5] FIG. 2 is a plan view of the inside of the transfer unit. [Figure 6] FIG. 10 is a top view showing the appearance of the left sub-block. [Figure 7] 10A and 10B are diagrams illustrating a connection between the duct and the transport area duct. [Figure 8] FIG. 10 is a diagram illustrating another example of the supply pipe. [Figure 9] FIG. 10 is a diagram illustrating another example of the duct. [Figure 10] FIG. 10 is a diagram illustrating another example of the duct. [Figure 11] 10A and 10B are diagrams illustrating other examples of the duct and the supply pipe. [Figure 12] FIG. 10 is a diagram illustrating another example of the supply pipe. [Figure 13] 10A and 10B are diagrams illustrating other examples of the duct and the supply pipe. [Figure 14] FIG. 10 is a diagram illustrating another example of the duct. [Figure 15] FIG. 10 is a diagram for explaining another example of a duct, showing a part in cross section. DETAILED DESCRIPTION OF THE INVENTION

[0008] In a photolithography process in a semiconductor device manufacturing process, for example, a series of processes are performed to form a desired resist pattern on a semiconductor wafer (hereinafter referred to as a "wafer") as a substrate. The series of processes includes, for example, a resist film formation process in which a resist solution is supplied onto the wafer to form a resist film, an exposure process in which the resist film is exposed to light, and a development process in which a developer is supplied to the exposed resist film and developed. Of these processes, processes other than the exposure process, such as the resist film formation process and development process, are performed in a coating and developing apparatus, which is a substrate processing apparatus.

[0009] A coating and developing treatment apparatus is provided with various treatment units, such as a liquid treatment unit that performs liquid treatment on wafers. Furthermore, for example, clean air is supplied to the liquid treatment unit to keep the atmosphere inside the unit clean. To supply this clean air, a duct is provided, and a clean air supply source and the liquid treatment unit are connected via the duct.

[0010] The coating and developing apparatus is further provided with a transport unit that transports wafers between the processing units. Clean air is also supplied to the transport area where the transport unit is provided. Air taken in from the surroundings of the coating and developing apparatus may be supplied to the transport area.

[0011] However, in this case, if there is a heat source such as electrical equipment around the air intake, the temperature of the air taken in and supplied to the transport area will increase. As a result, the high-temperature air also reaches the processing units installed around the transport area, which can cause the processing results of the processing units to be non-uniform across the wafer surface. Specifically, for example, in a temperature control unit that performs temperature adjustment processing and is installed adjacent to the transport area, the high-temperature air from the transport area causes the temperature on the transport area side of the temperature control plate on which the wafer is placed to become relatively high, which can result in non-uniform wafer temperature control by the temperature control plate across the wafer surface.

[0012] One possible solution to this problem is to connect a temperature-controlled air source to the transport area via a duct, thereby supplying the temperature-controlled air to the transport area. However, this method has the risk of increasing the footprint.

[0013] Therefore, the technology disclosed herein suppresses the thermal effects from heat sources such as electrical equipment installed in a substrate processing apparatus having a processing unit that processes substrates and a transport area in which a transport unit that transports substrates to the processing unit is installed, while suppressing an increase in footprint.

[0014] Hereinafter, a substrate processing apparatus according to this embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0015] <Coating and developing equipment 1>

[0016] FIG. 1 is a plan view schematically illustrating the configuration of a coating and developing apparatus 1 as a substrate processing apparatus. FIG. 2 is a diagram schematically illustrating the internal configuration of the central portion in the depth direction of the coating and developing apparatus 1. FIGS. 3 and 4 are diagrams respectively illustrating the internal configuration of the front and rear sides of the coating and developing apparatus 1. FIG. 5 is a plan view of the interior of a transfer unit, which will be described later. FIG. 6 is a top view showing the appearance of a left sub-block, which will be described later. FIG. 7 is a diagram illustrating the connection between a duct, which will be described later, and a duct for a transport area.

[0017] 1, the coating and developing apparatus 1 includes a carrier block B1, a processing block B2, and an interface block B3 serving as a relay block, which are arranged in this order along the width direction (the X direction in the figure). In the following description, the width direction may be referred to as the left-right direction. An exposure apparatus E is connected to the right side of the interface block B3 (the positive side of the X direction in the figure).

[0018] The carrier block B1 is a block into and out of which carriers C for transporting a plurality of wafers W as substrates collectively are carried in and out. The carrier block B1 is provided with a carrier mounting table 11. The carrier mounting table 11 is provided with a mounting plate 12 on which the carrier C is mounted when the carrier C is loaded or unloaded from the outside of the coating and developing apparatus 1. A plurality of mounting plates 12 (four in the example shown in the figure) are provided along a depth direction (Y direction in the figure) that is perpendicular to the width direction (X direction in the figure) in a horizontal plane. The carrier block B1 is also provided with a transfer unit 13 between the carrier mounting table 11 and the processing block B2. The transfer unit 13 has a transfer arm 13a that is configured to be able to move forward and backward, move up and down, rotate around a vertical axis, and move in the depth direction, and can transfer wafers W between the carriers C on each mounting plate 12 and a delivery tower 21, which will be described later.

[0019] Furthermore, the area on the front side of carrier block B1 (negative side in the Y direction in the figure) (specifically, the area on the front side of carrier block B1 that does not interfere with transport unit 13) is storage area 14. Storage area 14 stores a liquid delivery unit (not shown) that supplies processing liquid to the liquid processing unit, electrical components (not shown) for operating the liquid delivery unit, etc.

[0020] The processing block B2 is a block provided with processing units that process wafers W before or after exposure, and in this embodiment, it is made up of multiple (two in the example shown) sub-blocks B21 and B22 connected in the left-right direction (X direction in the figure). Hereinafter, the sub-block B21 on the carrier block B1 side will be referred to as the left sub-block B21, and the sub-block B22 on the interface block B3 side will be referred to as the right sub-block B22.

[0021] 2 to 4, the left sub-block B21 has first to sixth layer blocks L1 to L6 stacked in order from the bottom up. Similarly, the right sub-block B22 has first to sixth layer blocks P1 to P6 stacked in order from the bottom up. Each of the layer blocks L1 to L6 and P1 to P6 is provided with various processing units.

[0022] The left sub-block B21 is provided with a delivery tower 21 on the carrier block B1 side at the center in the depth direction (Y direction in the drawing) so as to straddle the first to sixth layer blocks P1 to P6. The delivery tower 21 is formed by stacking a plurality of delivery units vertically. The delivery tower 21 has delivery units at heights corresponding to the first to sixth layer blocks L1 to L6. Specifically, the delivery tower 21 has delivery units TRS11 and CPL11 at a position corresponding to the first layer block L1. Similarly, the delivery tower 21 has delivery units TRS and CPL at positions corresponding to the first to sixth layer blocks L2 to L6. The delivery unit TRS and the delivery unit CPL have substantially the same configuration. However, only the delivery unit CPL is a temperature adjustment unit, a type of processing unit, on which a wafer W is placed and which includes a temperature adjustment plate for adjusting the temperature of the placed wafer W. For example, the delivery unit CPL functions as a cooling unit, an example of a temperature adjustment unit, and includes a cooling plate CPLp for cooling the wafer W as a temperature adjustment plate, as shown in FIG. 5. The cooling plate CPLp has a flow path (not shown) formed therein through which a cooling refrigerant flows, for example. In each of the delivery units CPL, the wafer W is cooled to, for example, a temperature lower than room temperature, specifically, the wafer W is cooled to approximately the same temperature as the processing temperature in the liquid processing unit.

[0023] Furthermore, the delivery tower 21 has a delivery unit TRS1 provided at a height accessible to the transport unit 13 in the carrier block B1, specifically, at a position between the delivery unit CPL12 of the second layer block L2 and the delivery unit TRS13 of the third layer block L3, as shown in Fig. 2. This delivery unit TRS1 has a similar configuration to the delivery unit TRS, and is used, for example, when loading and unloading wafers between the left sub-block B21 and the carrier block B1.

[0024] 1, a transfer unit 22 is provided at the rear side (positive side in the Y direction in the figure) of the delivery tower 21. The transfer unit 22 has a transfer arm 22a that is configured to be able to move forward and backward and to be able to move up and down, and can transfer a wafer W between each delivery unit of the delivery tower 21.

[0025] Next, the first to sixth layer blocks L1 to L6 of the left sub-block B21 will be described. Note that, for the left sub-block B21, the configuration of the first layer block L1 is shown in Fig. 1, and the first layer block L1 will be specifically described below.

[0026] 1, a transfer area M is formed in the depth direction center of the first layer block L1 so as to extend in the width direction from the delivery tower 21. That is, in a plan view, the delivery tower 21 is provided at a position adjacent to the transfer area M in the extension direction of the transfer area M.

[0027] In the first layer block L1, various processing units are provided in an area on the front side (negative side in the Y direction in the drawing) and an area on the back side (positive side in the Y direction in the drawing) of the transfer area M. Specifically, the front area of ​​the first layer block L1 is provided with a resist film forming unit COT, which is a liquid processing unit that processes the wafer W with a processing liquid, and the back area is provided with a vertical unit T having various units.

[0028] The resist film forming unit COT forms a resist film on the wafer W. The resist film forming unit COT has a spin chuck 31 that holds and rotates the wafer W, and a cup 32 that surrounds the wafer W on the spin chuck 31 and collects processing liquid scattered from the wafer W. Two pairs of these spin chucks 31 and cups 32 are provided along the width direction. The resist film forming unit COT also has a nozzle 33 that discharges a resist liquid as processing liquid onto the wafer W held on the spin chuck 31. This nozzle 33 is configured to be movable between the cups 32 and is shared between the cups 32.

[0029] A plurality of vertical units T (four in the example shown) are provided along the width direction (X direction in the figure). Each vertical unit T has a heating unit that performs heat treatment on the wafer W, and in each vertical unit T, the heating units are stacked, for example, in two levels in the vertical direction.

[0030] Furthermore, in the first-level block L1, a transfer unit M1 is provided in the transfer region M. The transfer unit M1 has a transfer arm M1a that is configured to be able to move forward and backward, move up and down, rotate around a vertical axis, and move in the width direction (X direction in the figure). This transfer arm M1a can transfer wafers W between the delivery tower 21 and the resist film formation unit COT, between the resist film formation unit COT and the vertical unit T, and so on. The transfer arm M1a can also access a delivery tower 41 (described below) in the right sub-block B22.

[0031] The second to sixth layer blocks L2 to L6 are configured, for example, in the same manner as the first layer block L1.

[0032] The right sub-block B22 has a delivery tower 41 at the center in the depth direction (Y direction in the drawing), which is adjacent to the transport area M of the left sub-block B21 in the width direction (X direction in the drawing). As shown in FIG. 2, the delivery tower 41 is provided so as to straddle the first to sixth floor blocks P1 to P6 of the right sub-block B22.

[0033] The delivery tower 41 has a plurality of delivery units stacked in the vertical direction. The delivery tower 41 has delivery units provided at height positions corresponding to each of the first to sixth floor blocks L1 to L6 and the first to sixth floor blocks P1 to P6. Specifically, the delivery tower 41 has delivery units TRS provided at positions corresponding to the first floor block L1 and the first floor block P1, the second floor block L2 and the second floor block P2, the third floor block L3 and the third floor block P3, the fourth floor block L4 and the fourth floor block P4, the fifth floor block L5 and the fifth floor block P5, and the sixth floor block L6 and the sixth floor block P6.

[0034] 1, the right sub-block B22 is provided with a transfer unit 42 at the rear side (positive side in the Y direction in the figure) of the delivery tower 41. The transfer unit 42 has a transfer arm 42a that is configured to be able to move forward and backward and to be able to move up and down, and can transfer wafers W between the delivery units of the delivery tower 41.

[0035] Next, the first to sixth layer blocks P1 to P6 of the right sub-block B22 will be described. Note that in Fig. 1, the configuration of the first layer block P1 is shown for the right sub-block B22.

[0036] The first layer block P1 of the right sub-block B22 and the first layer block L1 of the left sub-block B21 differ in the type of liquid processing unit provided at the front side. In the first layer block P1 of the right sub-block B22, a developing unit DEV that performs development processing on exposed wafers W is provided as the liquid processing unit instead of a resist film forming unit COT. A developer is supplied as processing liquid from nozzle 33 of the developing unit DEV. The other configuration of the first layer block P1 of the right sub-block B22 is the same as that of the first layer block L1 of the left sub-block B21.

[0037] Moreover, the second to sixth layer blocks P2 to P6 are configured in the same manner as the first layer block P1, for example. 1 and other figures, the transfer region provided in the first to sixth layer blocks P1 to P6 is designated Q, and the vertical unit is designated U. Furthermore, the transfer unit provided in the transfer region Q is designated Q1, and the transfer arm of the transfer unit Q1 is designated Q1a. This transfer arm Q1a can transfer the wafer W between the delivery tower 21 and the developing unit DEV, between the developing unit DEV and the vertical unit U, and so on. The transfer arm M1a can also access a later-described delivery tower 51 in the interface block B3.

[0038] 1 and 3, in the processing block B2, ducts 23 and 43 are provided in the left sub-block B21 and the right sub-block B22, respectively. Specifically, in the left sub-block B21, the duct 23 is provided between the resist film forming unit COT and the carrier block B1 in a plan view. In the right sub-block B22, the duct 43 is provided between the developing unit DEV and the interface block B3 in a plan view.

[0039] The duct 23 extends in the up-down direction, i.e., the vertical direction, and is provided so as to straddle the first to sixth layer blocks L1 to L6. Six resist film forming units COT (specifically, filter units F, which will be described later) are connected to the duct 23 from its lower end to its upper end as liquid processing units. The six resist film forming units COT are connected to the duct 23 at different positions in the up-down direction (i.e., the length direction of the duct 23). On the other hand, duct 43 extends in the up-down direction, i.e., the vertical direction, and is provided so as to straddle the first to sixth layer blocks P1-P6. Six developing units DEV are connected to duct 43 from the bottom end to the top end as liquid processing units. The six developing units DEV are connected to duct 43 at different positions in the up-down direction (i.e., the length direction of duct 43).

[0040] Ducts 23, 43 supply clean air from air conditioner S as an air supply source to each liquid treatment unit. The clean air supplied from air conditioner S to ducts 23, 43 has been adjusted to a predetermined temperature and humidity. The predetermined temperature is, for example, below room temperature, specifically, 20°C to 23°C. A filter unit F is provided at the top of each of the resist film forming units COT and the developing units DEV, to which clean air is supplied from ducts 23 and 43. The filter unit F includes, for example, an ultra-low penetration air (ULPA) filter and a guide plate. The filter unit F purifies air blown by a fan from air conditioner S using the ULPA filter and supplies the air toward cup 32 via a downward flow using the guide plate. The upstream end of the filter unit F of each liquid processing unit is connected to ducts 23 and 43. Specifically, the upstream end of the filter unit F of each liquid processing unit is connected to ducts 23 and 43 via a damper (see symbol D in FIG. 7). Each filter unit F may include the damper. One end of flexible pipes S1 and S2 serving as connecting pipes is connected to the lower end of ducts 23 and 43, which are the upstream ends of ducts 23 and 43, respectively. That is, air is introduced into the ducts 23, 43 through the flexible pipes S1, S2 from the lower ends of the ducts 23, 43. The air conditioner S described above is connected to the other ends of the flexible pipes S1, S2.

[0041] Furthermore, in the processing block B2, fan filter units (FFUs) 24 and 44 are provided on the upper surfaces of the left sub-block B21 and the right sub-block B22, respectively. The FFUs 24 and 44 have fans 24a and 44a and filters 24b and 44b, respectively.

[0042] The fans 24a and 44a each take in air around the coating and developing apparatus 1. Specifically, the fans 24a and 44a each take in air from above around the coating and developing apparatus 1. The filters 24b and 44b remove foreign matter from the air taken in by the fans 24a and 44a, respectively, i.e., the filters 24b and 44b purify the air.

[0043] The FFUs 24 and 44 are connected to the transport area ducts 25 and 45 . The transport area duct 25 extends vertically and is provided so as to straddle the first to sixth layer blocks L1 to L6 within the left sub-block B21. The transport area duct 25 is connected to six transport areas M (specifically, their filter units G, which will be described later) from its lower end to its upper end. On the other hand, the transport region duct 45 extends vertically and is provided so as to straddle the first to sixth layer blocks L1 to L6 within the left sub-block B21. Further, the transport region duct 45 is connected to six transport regions Q (specifically, their filter units G, which will be described later) from its lower end to its upper end.

[0044] A filter unit G is provided at the top of each of the transport regions M, Q to which air is supplied from the transport region ducts 25, 45. The filter unit G has, for example, a ULPA filter and a guide plate, similar to the filter unit F. The filter unit G purifies the air blown by the fans 24a, 44a of the FFUs 24, 44 using the ULPA filter and supplies the air to the transport regions M, Q, for example, as a downward flow using the guide plate. The upstream ends of the filter units G in the transport regions M, Q are connected to the transport region ducts 25, 45. The FFUs 24 and 44 and the transfer region ducts 25 and 45 constitute at least a part of an intake supply unit. The intake supply unit takes in the air around the coating and developing apparatus 1 and supplies it to the transfer regions M and Q.

[0045] The pressures in the transport area M, the liquid treatment unit, and the delivery tower 51 (i.e., the delivery unit CPL) are exhausted by exhaust units (not shown) inside each area and air is supplied to the interior of each area so that the pressures in the areas are highest in the liquid treatment unit, lowest in the transport area M, and lowest in the delivery tower.

[0046] As shown in FIG. 6, electrical equipment boxes 26 and 46 that house electrical equipment for operating various units in the processing block B2 are provided on the top surfaces of the left sub-block B21 and the right sub-block B22, respectively.

[0047] 6 and 7, the duct 23 and the FFU 24 are connected by a supply pipe 27. That is, the supply pipe 27 is provided to guide the air from the duct 23 to the FFU 24. As a result, in addition to the air around the coating and developing apparatus 1 taken in by the FFU 24, the air from the air conditioner S that has flowed through the duct 23 is also supplied to the transfer region M via the FFU 24. The end of the supply pipe 27 on the FFU 24 side is provided, for example, above the fan 24a of the FFU 24 so as to discharge air horizontally. As a result, air from the supply pipe 27 is taken in by the fan 24a via an opening above the fan 24a.

[0048] An end of the supply pipe 27 on the duct 23 side is connected downstream of a connection portion between the duct 23 and the resist film forming unit COT. Specifically, the end of the supply pipe 27 on the duct 23 side is connected to a portion higher than the highest connection portion between the duct 23 and the resist film forming unit COT. More specifically, the end of the supply pipe 27 on the duct 23 side is connected to the upper end of the duct 23. The supply pipe 27 may be provided with a damper 27 a as a flow rate adjusting valve that adjusts the flow rate of air supplied from the duct 23 through the supply pipe 27 to the FFU 24 .

[0049] As shown in FIG. 1, the interface block B3 is provided with a delivery tower 51 at a position adjacent to the transfer area Q of the left sub-block B21 in the depth direction (Y direction in the drawing). A plurality of delivery units are stacked vertically in this delivery tower 51. In the delivery tower 51, delivery units TRS are provided at height positions corresponding to the first to sixth story blocks P1 to P6 of the right sub-block B22, respectively.

[0050] Furthermore, interface block B3 is provided with a transfer unit 52 on the exposure apparatus E side (the positive side in the X direction in the figure). Transfer unit 52 has a transfer arm 52a that is configured to be able to move forward and backward, move up and down, rotate around a vertical axis, and move in the depth direction (the Y direction in the figure). Transfer arm 52a can transfer wafers W between delivery tower 51 and exposure apparatus E.

[0051] The coating and developing apparatus 1 configured as described above includes at least one controller 100. The controller 100 processes computer-executable instructions that cause the coating and developing apparatus 1 to perform the various processes described herein. The controller 100 may be configured to control each element of the coating and developing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 100 may be included in the coating and developing apparatus 1. The controller 100 may include a processor, a storage unit, and a communication interface. The controller 100 may be implemented, for example, by a computer. The processor may be configured to read from the storage unit a program that provides logic or routines that enable various control operations and execute the read program to perform various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processor for execution. The medium may be a computer-readable storage medium H or a communication line connected to the communication interface. The storage medium H may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the coating and developing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0052] Next, in the coating and developing process performed using the coating and developing apparatus 1 configured as described above, for example, the wafer W is subjected to a cooling process as a temperature adjustment process by the transfer unit CPL, a resist film formation process by the resist film formation unit COT, and a heat treatment (pre-exposure bake process) by the heat treatment unit of the vertical unit T, in that order. Next, the wafer W is exposed by the exposure apparatus E. In the coating and developing process, the exposed wafer W is subjected to a heat treatment (post-exposure bake process) by the heat treatment unit of the vertical unit U, and a development process by the development unit DEV, for example. As a result, a resist pattern is formed on the wafer W. During this coating and developing process, in addition to the air around the coating and developing apparatus 1 taken in by the FFU 24, air from the air conditioner S that flows through the duct 23 is also supplied to the transfer region M via the FFU 24.

[0053] <Major Effects of This Embodiment> As described above, in this embodiment, the coating and developing apparatus 1 has the duct 23 that supplies air from the air conditioner S to the resist film forming unit COT as a liquid processing unit, and an intake supply unit consisting of the FFU 24 and the like that takes in air around the coating and developing apparatus 1 and supplies it to the transfer region M. In this embodiment, the coating and developing apparatus 1 further has a supply pipe 27 that connects the duct 23 to the intake supply unit (specifically, the FFU 24) so ​​that the air from the air conditioner S that has flowed through the duct 23 is also supplied to the transfer region M. Therefore, the air that is supplied from the intake supply unit to the transfer region M and reaches the processing units (specifically, the delivery unit CPL) around the transfer region M is a mixture of air taken in from around the coating and developing apparatus 1 and air that has flowed through the duct 23 but has not been supplied to the resist film forming unit COT. The temperature of the air taken in from the surroundings of the coating and developing apparatus 1 rises due to the influence of high-temperature areas (e.g., the electrical box 26) around the intake supply unit, and exceeds room temperature (23°C). In contrast, the air flowing through the duct 23 is supplied from the air conditioner S, is originally adjusted to a temperature below room temperature, and is less susceptible to the influence of the high-temperature areas. Therefore, the high temperature of the air supplied to the transfer region M can prevent the processing results of the processing units around the transfer region M from becoming non-uniform within the surface of the wafer W (specifically, the temperature control by the delivery unit CPL to be equal to or below room temperature can be prevented from becoming non-uniform within the surface of the wafer W). In other words, the processing results of the processing units around the transfer region M can be prevented from being affected by the heat around the intake supply unit via the air supplied to the transfer region M. In this embodiment, the duct 23, which can cool the air supplied to the transfer region M, is used to supply air to the resist film formation unit COT. Therefore, according to this embodiment, the footprint of the coating and developing apparatus 1 can be reduced compared to an embodiment in which a duct for lowering the temperature of the air supplied to the transport region M is provided separately from the duct 23 used to supply air to the resist film forming unit COT. Furthermore, in this embodiment, instead of air alone being supplied from the air conditioner S through the duct 23, a mixture of air supplied through the duct 23 and the air surrounding the transport region M is supplied to the transport region M. Therefore, even if the flow rate of the air supplied from the air conditioner S through the duct 23 is low, a sufficient flow rate can be ensured as the flow rate of the air supplied to the transport region M.

[0054] The inventors measured the temperature of the wafer W after temperature control by the delivery unit CPL in each of the following cases: when temperature and humidity regulated air (hereinafter sometimes referred to as "temperature and humidity regulated air") was not supplied to the FFU 24; when temperature and humidity regulated air was directly supplied to the FFU 24 at a low flow rate; and when temperature and humidity regulated air was directly supplied to the FFU 24 at a high flow rate. At this time, the set temperature of the cooling plate CPLp of the delivery unit CPL was set to 21°C, and the temperature of the air from the air conditioner S was set to 22°C.

[0055] In this test, when temperature and humidity regulated air was not supplied to the FFU 24, the in-plane temperature variation (3σ) of the wafer W was 0.19°C or more. In contrast, when temperature and humidity regulated air was supplied to the direct intake supply section at a low flow rate or a high flow rate, the in-plane temperature variation of the temperature control plate was 0.165°C or less and 0.16°C or less, respectively.

[0056] In this embodiment, the temperature and humidity conditioned air is supplied to the FFU 24 via the duct 23 rather than directly, but it is believed that results similar to the above test results will be obtained.

[0057] Furthermore, in this embodiment, the end of the supply pipe 27 on the duct 23 side is connected downstream of the connection part of the duct 23 with the resist film forming unit COT, specifically, connected downstream of the connection part of the duct 23 with the resist film forming unit COT in the highest layer block (sixth layer block P6). Therefore, it is possible to suppress the influence that supplying the air flowing through the duct 23 to the intake supply part has on the supply of air from the duct 23 to the resist film forming unit COT. Note that, for example, if the end of the supply pipe 27 on the duct 23 side is connected between the connection part of the duct 23 with the resist film forming unit COT in the sixth layer block P6 and the connection part of the duct 23 with the resist film forming unit COT in the fifth layer block P5, the following concerns arise. That is, when the flow rate of air supplied from the duct 23 to the FFU 24 via the supply pipe 27 is adjusted by the damper 27a, there is a concern that the balance of the flow rates of air supplied to the resist film forming units COT via the duct 23 may be lost among the first to sixth layer blocks P1 to P6. This embodiment can eliminate this concern.

[0058] Furthermore, in this embodiment, the intake supply unit has a fan 24a. Therefore, the mixed air, which is supplied from the intake supply unit to the transport region M and is made up of the air around the coating and developing apparatus 1 and the air supplied via the duct 23, can be agitated. Therefore, it is possible to prevent the mixed air supplied from the intake supply unit to the transport region M from becoming uneven in temperature and humidity.

[0059] As described above, a damper 27a may be provided in the supply pipe 27. By providing the damper 27a, the temperature of the mixed air can be adjusted.

[0060] <Modifications of supply pipes and ducts> In the above example, the end of the supply pipe 27 on the FFU 24 side (i.e., the air outlet from the supply pipe 27 to the intake supply section including the FFU 24) is installed above the fan 24a of the FFU 24 so as to blow air horizontally, and does not blow air toward the fan 24a. However, as in the supply pipe 27A of FIG. 8, the end of the supply pipe 27 on the FFU 24 side may face the fan 24a and blow air toward the fan 24a. This allows the air blown out from the supply pipe 27A to be efficiently taken in by the FFU 24. Therefore, the temperature of the air supplied from the FFU 24 to the transfer region M can be lowered, approaching room temperature. This makes it possible to more efficiently prevent the processing results of the processing units around the transfer region M from becoming non-uniform across the surface of the wafer W due to the influence of the temperature of the air supplied to the transfer region M.

[0061] When the end of the supply pipe 27A on the FFU 24 side faces the fan 24a, the end is preferably located on the transfer region duct 25 side in plan view, and more preferably is provided so as to face the transfer region duct 25. This allows the temperature- and humidity-controlled air blown out from the end of the supply pipe 27A on the FFU 24 side to be efficiently introduced into the transfer region duct 25, and the fan 24a allows the required flow rate to flow into the transfer region duct 25. Therefore, the temperature of the air supplied to the transfer region M via the transfer region duct 25 can be lowered.

[0062] 9, the duct 23A that supplies air to the resist film forming unit COT may be a double duct. Specifically, the duct 23A may have an inner duct 23Aa through which air supplied from the air conditioner S to the resist film forming unit COT flows, and an outer duct 23Ab that covers the inner duct 23Aa and through which air supplied from the air conditioner S that is not supplied to the resist film forming unit COT flows. In this case, the air flowing between the outer duct 23Ab and the inner duct 23Aa functions as a heat insulating layer for the inner duct 23Aa, and therefore it is possible to prevent the air flowing through the inner duct 23Aa and supplied to the resist film forming unit COT from being heated by high-temperature parts outside the duct 23A (for example, the liquid supply unit, electrical components, etc. in the accommodation area 14).

[0063] Therefore, it is possible to suppress the occurrence of a temperature difference and an accompanying humidity difference due to a difference in residence time in the duct 23A between the air supplied to the resist film forming unit COT connected to the upstream side of the duct 23A and the air supplied to the resist film forming unit COT connected to the downstream side of the duct 23A. Therefore, it is possible to suppress the occurrence of a difference in processing results due to a temperature difference or humidity difference between the resist film forming unit COT connected to the upstream side of the duct 23A and the resist film forming unit COT connected to the downstream side of the duct 23A.

[0064] The flow rate of the air flowing through the outer duct 23Ab is, for example, 10% or less of the amount of air supplied to the duct 23A.

[0065] 10, the outer duct 23Ab may cover all of the outer wall surfaces of the inner duct 23Aa except for the surface facing the resist film forming unit COT in a plan view. Specifically, the outer duct 23Ab may cover three of the outer wall surfaces of the inner duct 23Aa in a plan view: the surface facing the carrier block B1, the front side (negative side in the Y direction in the figure), and the back side (positive side in the Y direction in the figure). This more reliably prevents the air flowing through the inner duct 23Aa and supplied to the resist film forming unit COT from being heated by the influence of the outside of the duct 23A.

[0066] In the duct 23A, for example, an inlet 23Ac that introduces air from the inner duct 23Aa into the outer duct 23Ab is provided in a lower portion, which is an upstream portion, of the inner duct 23Aa. Air from the air conditioner S is supplied to the lower portion of the inner duct 23Aa, and a portion of the air is introduced into the outer duct 23Ab via the inlet 23Ac. Therefore, compared to a case in which the air conditioners S are individually connected to the inner duct 23Aa and the outer duct 23Ab, i.e., compared to a case in which the inner duct 23Aa and the outer duct 23Ab are individually connected via different flexible pipes, the piping can be simplified and the footprint can be reduced.

[0067] Furthermore, the inlet 23Ac is located, for example, below the connection portion of the inner duct 23Aa with the resist film forming unit COT of the first layer block L1, which is the lowest liquid processing unit, i.e., upstream of the connection portion of the inner duct 23Aa with the most upstream liquid processing unit. Unlike the present example, in a configuration in which inlet 23Ac is located downstream of the connection portion of inner duct 23Aa with the most upstream liquid processing unit, there is a risk of air backflow. Specifically, there is a risk that air introduced from inlet 23Ac of inner duct 23Aa to outer duct 23Ab flows to a position in outer duct 23Ab near the most upstream liquid processing unit, returns to inlet 23Ac, and then returns to inner duct 23Aa. By providing inlet 23Ac at a position as in the present example, it is possible to suppress the above-mentioned backflow of air.

[0068] In the duct 23A, for example, the outer duct 23Ab is connected to the FFU 24, and air from the outer duct 23Ab is taken into the FFU 24. In this case, the air flowing through the outer duct 23Ab can be effectively utilized. In particular, the temperature and humidity-adjusted air that is generated at great expense can be effectively utilized. The air flowing through the outer duct 23Ab is affected by the heat outside the outer duct 23Ab, but is not affected by the heat from the outside as much as the air taken in from the FFU 24.

[0069] 7 and other figures, duct 23 having no outer duct can prevent air from stagnating in the opposite portion of duct 23 from air conditioner S when a liquid treatment unit is not connected to a position corresponding to the downstream side of duct 23, for example, and air is not supplied to the liquid treatment unit from the opposite portion (the upper portion in the illustrated example) of duct 23. As a result, air whose temperature and humidity have changed while stagnating can be prevented from being supplied to the liquid treatment unit on the air conditioner S side (the lower portion in the illustrated example).

[0070] Furthermore, as shown in FIG. 11, a duct 23B that supplies air to the resist film forming unit COT may have a duct body 201, a partition member 202, and an introduction portion 203.

[0071] The duct body 201 is formed in a cylindrical shape (specifically, a rectangular cylindrical shape) with a bottom and a lid. The duct body 201 may include a cylindrical member without a bottom or lid, a top member that closes an upper opening of the cylindrical member, and a bottom cover member that closes a lower opening of the cylindrical member.

[0072] The partition member 202 extends in the length direction of the duct 23B, i.e., in the vertical direction, and divides the internal space of the duct 23B into a first duct space DS1 and a second duct space DS2. Specifically, the partition member 202 divides the internal space of the duct main body 201 into the first duct space DS1 and the second duct space DS2. In the example shown in the figure, the partition member 202 divides the internal space of the duct 23B (specifically, the internal space of the duct main body 201) over the entire vertical direction so as to prevent air from flowing between the first duct space DS1 and the second duct space DS2.

[0073] The introduction section 203 introduces air (specifically, temperature and humidity-adjusted air) from an air conditioner S as an air supply source into each of the first duct space DS1 and the second duct space DS2. For example, the introduction section 203 individually includes a first introduction pipe 211 as a first introduction section that introduces air from the air conditioner S into the first duct space DS1, and a second introduction pipe 212 as a second introduction section that introduces air from the air conditioner S into the second duct space DS2. That is, for example, in the duct 203B, the first duct space DS1 and the second duct space DS2 have different air inlets, and the air from the air conditioner S is introduced independently into each of the first duct space DS1 and the second duct space DS2. The introduction section 203 has inlets (not shown) at positions corresponding to the first introduction pipe 211 and the second introduction pipe 212 in the bottom wall of the duct main body 201.

[0074] The duct 23B, whose internal space is directed by the partition member 202, supplies air through the first duct space DS1 and air through the second duct space DS2 to different resist film forming units COT. Specifically, the duct 23B supplies air through the first duct space DS1 to multiple resist film forming units COT located below, and supplies air through the second duct space DS2 to multiple resist film forming units COT located above. More specifically, the duct 23B supplies air through the first duct space DS1 to the filter units F of the resist film forming units COT in the first to third layer blocks L1 to L3, and supplies air through the second duct space DS2 to the filter units F of the resist film forming units COT in the fourth to sixth layer blocks L4 to L6.

[0075] Therefore, supply ports 221 are provided on the side wall of the duct body 201 of the duct 23B on the resist film forming unit COT side at positions corresponding to the first to third layer blocks L1 to L3 on the first duct space DS1 side, and supply ports 222 are provided on the second duct space DS2 side at positions corresponding to the fourth to sixth layer blocks L4 to L6. Air passing through the first duct space DS1 is supplied from the supply ports 221 to the filter units F of the resist film forming units COT of the first to third layer blocks L1 to L3. Furthermore, air passing through the second duct space DS2 is supplied from the supply ports 222 to the filter units F of the resist film forming units COT of the fourth to sixth layer blocks L4 to L6.

[0076] Unlike this example, when air is supplied from one internal space of the duct to all of the first to sixth layer blocks L1 to L6 in which the resist film forming units COT are provided, the cross-sectional area of ​​the one internal space must correspond to the total airflow volume for all layers, i.e., six layers. Therefore, the speed of the air flowing through the duct is slow at positions downstream of the duct (specifically, at the positions of the fourth to sixth layer blocks L4 to L6). In contrast, in the present embodiment, the duct 23B supplies air via the first duct space DS1 and air via the second duct space DS2 to different resist film forming units COT. Specifically, the duct 23B supplies air via the first duct space DS1 to the first to third layer blocks L1 to L3, and air via the second duct space DS2 to the fourth to sixth layer blocks L4 to L6. Therefore, the cross-sectional area of ​​the second duct space DS2, which supplies air to a downstream position in a different embodiment from the present embodiment, can be narrowed to correspond to the total airflow volume for a portion of the first to sixth layer blocks L1 to L6 (specifically, the three layers of the fourth to sixth layer blocks L4 to L6), rather than for all of them. Therefore, the wind speed of the air flowing through the duct 23B can be increased downstream of the duct 23B (specifically, the positions of the fourth to sixth layer blocks L4 to L6). As a result, the air supplied to the filter units F in the layer downstream of duct 23B (specifically, the fourth to sixth layer blocks L4 to L6) stays in duct 23B for a shorter period of time, making it less susceptible to external thermal influences within duct 23B. This reduces the inter-layer differences in temperature and humidity of the air supplied to the first to sixth layer blocks L1 to L6.

[0077] Unlike this example, even when air is supplied from the internal space of one duct to all of the first to sixth layer blocks L1 to L6 in which the resist film forming units COT are provided, and even when the duct 23B of this example is used, the opening degree (angle) of the damper D (see FIG. 7) of each layer is adjusted to reduce the difference in airflow between layers, that is, to balance the airflow between each layer. However, unlike this example, when air is supplied to all layers from one internal space of the duct, the opening degree of the damper D for the upstream layer, especially the most upstream layer (specifically the first layer block L1), needs to be reduced in order to reduce the difference in airflow rate between layers. For example, the opening degrees of the dampers D for the first layer block L1 to the sixth layer block L6 need to be set to 20%, 40%, 50%, 70%, 80%, 100%, etc., respectively. In contrast, when the duct 23B of this embodiment is used, the first duct space DS1 through which air supplied to the upstream layer in an example different from this embodiment passes and the second duct space DS2 through which air supplied to the downstream layer in an example different from this embodiment pass have different air inlet ports. Separate air is introduced into the first duct space DS1 and the second duct space DS2. Therefore, even if the opening of the damper D for the upstream layer is small, the difference in airflow rate between layers can be reduced. For example, the opening of the damper D for the first layer block L1 to the sixth layer block L6 can be set to 70%, 80%, 100%, 70%, 80%, 100%, etc., respectively, to reduce the difference in airflow rate between layers. Therefore, pressure loss due to a small opening of the damper D can be suppressed, and pressure loss in the entire air supply path including the FFU 24, the duct 23B, and the damper D can be suppressed. Furthermore, because pressure loss can be suppressed in this way, temperature and humidity conditioned air can be supplied to the resist film forming unit COT at a high flow rate, making it easier to maintain an appropriate temperature and humidity inside the resist film forming unit COT. Furthermore, because pressure loss can be suppressed as described above, even if the flow rate of temperature and humidity conditioned air from the air conditioner S is low, the flow rate to each resist film forming unit COT can be ensured. In other words, the air conditioner S can be changed to one with a lower flow rate. This allows for reductions in power consumption and costs.

[0078] In the case of duct 23B, supply pipe 27B connecting duct 23B and FFU 24 includes, for example, supply pipe 27B1 for first duct space DS1 and supply pipe 27B2 for second duct space DS2. Discharge ports (not shown) are provided in the top wall of duct main body 201 at positions corresponding to supply pipe 27B1 and supply pipe 27B2, respectively.

[0079] Furthermore, with duct 23B, the air supplied to FFU 24 via duct 23B is also less susceptible to external thermal effects within duct 23B. Therefore, the air supplied to transfer region M via FFU 24 is also at a relatively low temperature. Therefore, with duct 23B, the temperature of the air supplied to transfer region M is high, which can prevent the processing results of the processing units around transfer region M from becoming non-uniform within the surface of wafer W.

[0080] When multiple FFUs are provided for one transfer area, the FFU to which air is supplied via supply pipe 27B1 and the FFU to which air is supplied via supply pipe 27B2 may be the same or different.

[0081] 12, the supply pipe 27B1 and the supply pipe 27B2 may merge together. That is, the air from the first duct space DS1 and the air from the second duct space DS2 may be mixed in the supply pipe 27B and supplied to the FFU 24.

[0082] 13, the duct 23C that supplies air to the resist film forming unit COT may have a duct body 201C whose internal space is partitioned by a partition member 202C into a first duct space DS1 and a second duct space DS2, and may have a downwardly recessed cutout portion 231 in the first duct space DS1. The cutout portion 231 is provided so as to span the fourth to sixth layer blocks L4 to L6 to which air is not supplied from the first duct space DS1, as viewed in the width direction of the coating and developing apparatus 1.

[0083] By providing such a cutout portion 231, it is possible to install electrical components, and to provide wiring for the resist film forming unit COT and piping for the processing liquid in the space formed by the cutout portion 231. Therefore, it is possible to reduce the footprint of the coating and developing apparatus 1.

[0084] In the case of the duct 23C, the supply pipe 27C connecting the duct 23C and the FFU 24 is provided, for example, only for the second duct space DS2. That is, in the case of the duct 23C, for example, the air that has passed through the first duct space DS1 is not supplied to the FFU 24, and only the air that has passed through the second duct space DS2 is supplied to the FFU 24.

[0085] In the above example, the partition members 202 and 202C separate the first duct space DS1 and the second duct space DS2 up to the upstream end, i.e., the lower end, of the ducts 23B and 23C to prevent air from flowing between them. However, as shown in Fig. 14, the partition member 202D may not separate the first duct space DS1 and the second duct space DS2 up to the upstream end, i.e., the lower end, of the duct 23D, and the first duct space DS1 and the second duct space DS2 may communicate with each other on the upstream side (specifically, for example, the upstream end). In the case of the duct 23D, the introduction section 203D that introduces air (specifically, temperature and humidity regulated air) from the air conditioner S into the first duct space DS1 and the second duct space DS2 is provided in common to the first duct space DS1 and the second duct space DS2.

[0086] In the case of the duct 23D, similarly to the above-described duct 23B, it is possible to reduce the interlayer differences in temperature and humidity of the air supplied to the first to sixth layer blocks L1 to L6.

[0087] 15, the duct 23E that supplies air to the resist film forming unit COT and whose internal space is partitioned by a partition member 202 may be a double duct. Specifically, the duct 23E may have an inner duct 23Ea through which air supplied from the air conditioner S to the resist film forming unit COT flows, and an outer duct 23Eb that covers the inner duct 23Ea and through which air supplied from the air conditioner S that is not supplied to the resist film forming unit COT flows.

[0088] The inner duct 23Ea is configured similarly to, for example, the duct 23B in Fig. 11. However, unlike the duct 23B, the inner duct 23Ea is provided with an inlet 241 that introduces air from inside the first duct space DS1 into the outer duct 23Eb. The inlet 241 is provided, for example, downstream of the supply port 221 for the first layer block L1, which is the lowest level. Although not shown, an inlet for introducing air from the second duct space DS2 into the outer duct 23Eb may be provided instead of or in addition to the inlet 241. In this case, the inlet is provided, for example, downstream of the supply port 222 for the fourth layer block L4, which is the lowest layer and serves as a destination for supplying air via the second duct space DS2.

[0089] In the duct 23E, for example, the outer duct 23Eb is connected to the FFU 24, and air from the outer duct 23Eb is taken into the FFU 24.

[0090] <Other variations> Just as the duct 23 and the FFU 24 are connected by the supply pipe 27, the duct 43 and the FFU 44 may be connected via a supply pipe. When a plurality of FFUs are provided for one transport area, only the FFU that is closer to the delivery unit CPL in plan view may be connected to the duct 23 or the duct 43 via a supply pipe. The duct 43 may be configured like the ducts 23A, 23B, 23C, 23D, and 23E. In the illustrated example, the duct 23 is provided on the carrier block B1 side. Alternatively, the duct 23 may be provided on the interface block B3 side. This makes it possible to prevent the air in the duct 23 from being affected by the temperature of the liquid delivery unit and electrical components inside the high-temperature storage area 14.

[0091] In addition, in the above examples, the liquid processing unit to which air is supplied from ducts 23, 23A, 23B, 23C, 23D, and 23E is the resist film forming unit COT, but it may also include liquid processing units other than the resist film forming unit COT, such as a development unit. Similarly, the liquid processing units to which air is supplied from duct 43 may include liquid processing units other than the developing unit.

[0092] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0093] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that would be apparent to a person skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0094] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) A substrate processing apparatus having a processing unit for processing a substrate and a transfer area provided with a transfer unit for transferring the substrate to the processing unit, a duct for supplying air from an air source to the processing unit; an intake supply unit that takes in ambient air around the substrate processing apparatus and supplies the air to the transfer area; a supply pipe connecting the duct and the intake supply unit so that air from the supply source that has flowed through the duct is also supplied to the transfer area. (2) The substrate processing apparatus according to (1), wherein the end of the supply pipe on the duct side is connected to the downstream side of a connection portion of the duct with the processing unit. (3) The intake supply unit is a fan that takes in air around the substrate processing apparatus; a filter for removing foreign matter from the ambient gas taken in by the fan; The substrate processing apparatus according to (1) or (2) above, further comprising a transfer region duct that introduces the atmospheric gas that has passed through the filter into the transfer region. (4) The substrate processing apparatus according to (3), wherein the air outlet of the supply pipe blows air toward the fan of the intake supply unit. (5) The substrate processing apparatus according to any one of (1) to (4), wherein the air supplied from the supply source has been adjusted in temperature and humidity. (6) Air is introduced into the duct from the lower end of the duct; The substrate processing apparatus according to any one of (1) to (5), wherein an upper end of the duct is connected to the intake supply unit. (7) A transfer unit is further provided at a position adjacent to the transport area in the extension direction of the transport area in a plan view, The substrate processing apparatus according to any one of (1) to (6), wherein the transfer unit includes a temperature adjustment plate on which a substrate is placed and which adjusts the temperature of the placed substrate. (8) The duct is The processing units are connected to different positions along the length of the duct, an inner duct through which air flows to supply the processing unit; The substrate processing apparatus according to any one of (1) to (7), further comprising: an outer duct that covers the inner duct and through which air that is not supplied to the processing units flows. (9) An inlet for introducing air from the inner duct into the outer duct is provided at a lower portion of the inner duct, The substrate processing apparatus according to (8), wherein the air from the supply source is supplied to a lower portion of the inner duct, and a portion of the air is introduced into the outer duct through the inlet. (10) The substrate processing apparatus according to (8) or (9), wherein the outer duct is connected to the intake supply unit, and the duct takes in air from the outer duct into the intake supply unit. (11) The duct is a partition member extending in the length direction of the duct and dividing the internal space of the duct into a first duct space and a second duct space; an introduction portion that introduces air from the supply source into each of the first duct space and the second duct space, The substrate processing apparatus according to any one of (1) to (10), wherein the air passing through the first duct space and the air passing through the second duct space are supplied to different processing units. (12) The duct is The air passing through the first duct space is supplied to a plurality of the processing units located on one side in the longitudinal direction of the duct, The substrate processing apparatus according to (11), wherein the air passing through the second duct space is supplied to the processing units located on the other side in the longitudinal direction of the duct. (13) The substrate processing apparatus according to (12), wherein the air supplied from the supply source and introduced into the first duct space and the second duct space has been adjusted in temperature and humidity. (14) The supply pipe is provided for each of the first duct space and the second duct space, The substrate processing apparatus according to any one of (11) to (13), wherein the supply pipe to the first duct space and the supply pipe to the second duct space join together. (15) The partition member partitions the internal space of the duct over the entire length of the duct, The introduction section a first introduction section that introduces air from the supply source into the first duct space; and a second introduction part that introduces the air from the supply source into the second duct space. (16) In a substrate processing apparatus having a processing unit for processing a substrate and a transfer area provided with a transfer unit for transferring a substrate to the processing unit, a method for taking in ambient air of the substrate processing apparatus and supplying it to the transfer area, comprising: the substrate processing apparatus has a duct for supplying air from an air supply source to the processing unit; The method further comprises mixing the air that has flowed through the duct but has not been supplied to the processing unit with air taken in from the periphery of the substrate processing apparatus, and supplying the mixture to the transfer region. [Explanation of symbols]

[0095] 1 Coating and developing equipment 23, 23A, 23B, 23C, 23D, 23E ducts 24 Fan filter unit (FFU) 25 Duct for conveying area 27, 27A, 27B, 27C supply pipe COT resist film forming unit M Transport area M1 transport unit S Air conditioner W wafer

Claims

1. 1. A substrate processing apparatus having a processing unit for processing a substrate, and a transfer area provided with a transfer unit for transferring the substrate to the processing unit, a duct for supplying air from an air source to the processing unit; an intake supply unit that takes in ambient air around the substrate processing apparatus and supplies the air to the transfer area; a supply pipe connecting the duct and the intake supply unit so that air from the supply source that has flowed through the duct is also supplied to the transfer area.

2. The substrate processing apparatus according to claim 1 , wherein an end of the supply pipe on the duct side is connected to a downstream side of a connection portion of the duct with the processing unit.

3. The intake supply unit includes: a fan that takes in air around the substrate processing apparatus; a filter for removing foreign matter from the ambient gas taken in by the fan; 3. The substrate processing apparatus according to claim 1, further comprising a transfer region duct that introduces the atmospheric gas that has passed through the filter into the transfer region.

4. The substrate processing apparatus according to claim 3 , wherein the air outlet of the supply pipe blows air toward the fan of the intake supply unit.

5. 3. The substrate processing apparatus according to claim 1, wherein the air supplied from said supply source is temperature and humidity adjusted.

6. Air is introduced into the duct from a lower end of the duct, The substrate processing apparatus according to claim 1 , wherein an upper end of the duct is connected to the intake supply unit.

7. a transfer unit disposed adjacent to the transport area in a direction in which the transport area extends in a plan view; 3. The substrate processing apparatus according to claim 1, wherein the transfer unit includes a temperature adjustment plate on which a substrate is placed and which adjusts the temperature of the placed substrate.

8. The duct is The processing units are connected to different positions along the length of the duct, an inner duct through which air flows to supply the processing unit; 3. The substrate processing apparatus according to claim 1, further comprising: an outer duct covering the inner duct and through which air that is not supplied to the processing units flows.

9. an inlet for introducing air from the inside of the inner duct into the outer duct is provided at a lower portion of the inner duct; The substrate processing apparatus according to claim 8 , wherein the air from the supply source is supplied to a lower portion of the inner duct, and a portion of the air is introduced into the outer duct through the inlet.

10. The substrate processing apparatus according to claim 8 , wherein the outer duct is connected to the intake supply unit, and the duct takes in air from the outer duct into the intake supply unit.

11. The duct is a partition member extending in the length direction of the duct and dividing the internal space of the duct into a first duct space and a second duct space; an introduction portion that introduces air from the supply source into each of the first duct space and the second duct space, 3 . The substrate processing apparatus according to claim 1 , wherein the air passing through the first duct space and the air passing through the second duct space are supplied to different processing units.

12. The duct is The air passing through the first duct space is supplied to a plurality of the processing units located on one side in the longitudinal direction of the duct, The substrate processing apparatus according to claim 11 , wherein the air passing through the second duct space is supplied to the processing units located on the other side in the longitudinal direction of the duct.

13. The substrate processing apparatus according to claim 12 , wherein the air supplied from the supply source and introduced into the first duct space and the second duct space has been adjusted in temperature and humidity.

14. the supply pipe is provided for each of the first duct space and the second duct space, The substrate processing apparatus according to claim 11 , wherein the supply pipe to the first duct space and the supply pipe to the second duct space join together.

15. The partition member partitions the internal space of the duct over the entire length of the duct, The introduction section a first introduction section that introduces air from the supply source into the first duct space; and a second introduction part that introduces the air from the supply source into the second duct space.

16. 1. A method for supplying ambient air to a substrate processing apparatus having a processing unit for processing a substrate and a transfer area provided with a transfer unit for transferring the substrate to the processing unit, the method comprising: the substrate processing apparatus has a duct for supplying air from an air supply source to the processing unit; The method further comprises mixing the air that has flowed through the duct but has not been supplied to the processing unit with air taken in from the periphery of the substrate processing apparatus, and supplying the mixture to the transfer region.

Images