Glass composition for low-dielectric-constant substrate
A glass composition with specific ratios of F2, SiO2, Al2O3, B2O3, CaO, MgO, SrO, and ZnO enables low-temperature bonding of crystalline compounds in LTCC substrates, addressing high-temperature processing issues and maintaining signal integrity.
Patent Information
- Application Number
- JP2024065814
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-04-15
- Publication Date
- 2025-10-27
- Estimated Expiration
- 2044-04-15
AI Technical Summary
Existing methods for producing low dielectric constant and low dielectric loss LTCC substrates face challenges such as high-temperature processing, complex crystallization processes, and poor chemical durability, which impair signal propagation and attenuation properties.
A glass composition comprising 8 to 17 mol% F2, 25 to 50 mol% SiO2, 5 to 15 mol% Al2O3, 15 to 40 mol% B2O3, 4 to 11 mol% CaO, 8 mol% or less MgO, 10 mol% or less SrO, and 1 to 10 mol% ZnO, allowing for bonding of crystalline compounds at lower temperatures without impairing their properties, with a glass transition temperature of 600°C or lower.
The glass composition effectively binds crystalline compounds at lower temperatures, maintaining low dielectric constant and loss properties, preventing signal attenuation and ensuring high-speed signal propagation.
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Abstract
Description
[Technical Field]
[0001] The present invention relates to a glass composition for a low dielectric constant substrate. [Background technology]
[0002] In recent years, there has been active development of devices and antennas compatible with the high frequency range of 30 to 300 GHz known as millimeter waves. There is also an increasing demand for low-temperature co-fired ceramic substrates (LTCC substrates) used in such high-frequency communication systems. Millimeter waves are known to have high directionality and the ability to transmit a large amount of information, but to make the most of these characteristics, the LTCC substrate material must have the properties of low signal attenuation in the circuit and be capable of high-speed signal propagation. Here, signal attenuation in the high frequency range is the sum of conductor loss and dielectric loss, and the impact of signal attenuation due to the dielectric loss of the LTCC substrate material is an issue. To solve this problem, there is a demand for materials for LTCC substrates with low dielectric constants and low dielectric loss.
[0003] To solve this problem, various approaches have been taken, as described below. One known method for producing LTCC substrates is to sinter a crystalline compound with a low dielectric constant and low dielectric loss, but this method requires a process of sintering the crystalline compound at high temperatures, which is difficult to achieve industrially.
[0004] There is a method for producing LTCC substrates by crystallizing a glass composition to obtain crystals with low dielectric constant and low dielectric loss. This method utilizes the softening and crystallization properties of the crystallized glass composition, which has attracted attention as a material that can be used to fire substrate materials at low temperatures. However, the glass crystallization process is complicated, and strict control of temperature and time is required to crystallize the desired crystals with low dielectric constant and low dielectric loss characteristics, which is difficult to achieve industrially.
[0005] Furthermore, components other than the crystallized components in the crystallized glass composition remain as a matrix, and this often presents a problem of poor chemical durability and strength, making it difficult to design the glass composition.
[0006] Another method utilizes the property of glass that it softens at low temperatures, and involves binding a crystalline compound with a low dielectric constant and low dielectric loss with a glass composition. This method allows a substrate material to be formed by binding crystalline compounds having desired properties with glass, making it easy to design the properties of the substrate. However, if the softening point of the glass is high, problems arise in that the temperature required for bonding becomes high and the time required for bonding becomes long. As a result, the glass composition reacts with the crystalline compound, which reduces the characteristics of the circuit board, such as low signal attenuation and not interfering with high-speed signal propagation.
[0007] If the softening point of the glass of the substrate can be lowered, the fluidity at the heat treatment temperature increases, the amount of glass required for bonding can be reduced, and deterioration of the properties of the substrate as a whole can be suppressed. Furthermore, the improved fluidity at the heat treatment temperature due to the low softening point also contributes to reducing the number of pores in the substrate material, thereby suppressing deterioration of the substrate properties.
[0008] The invention disclosed in Patent Document 1 discloses a glass composition in which diopsite, cordierite, and forsterite crystallize as a method for reducing the number of pores in a substrate material. This invention discloses a glass composition with a low fluorine content of 0.1 to 3 mol % in order to improve the fluidity of the glass and obtain a dense sintered body by reducing the pores that form during crystallization. However, the preparation of this glass composition requires melting at a high temperature of 1400 to 1500°C, and also requires heat treatment for crystallization at 850 to 950°C, which is problematic.
[0009] Non-Patent Document 1 discloses a glass composition to which CaF2 is added for the purpose of reducing the viscosity of the glass composition at high temperatures and improving the dielectric properties. However, the study was limited to a very small range of fluorine content up to 0.72 wt%, and the only results obtained were that although the relative dielectric constant (εr) decreased, the glass transition temperature (°C) increased.
[0010] When the glass transition temperature (°C) is particularly high and exceeds 600°C, the heat treatment requires an excessive amount of heat and time. This increases the reactivity of the glass composition for low dielectric constant substrates with the crystalline compound to which it is bound, leading to increased attenuation of the circuit as a substrate and slower signal propagation.
[0011] As described above, in order to improve signal attenuation due to dielectric loss in LTCC substrate materials, there remains an unsolved problem of providing a material for LTCC substrates with a low dielectric constant and low dielectric loss that can be bonded to a crystalline compound at a lower temperature without impairing the properties of the crystalline compound having the desired low dielectric constant and low dielectric loss properties. [Prior art documents] [Patent documents]
[0012] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-052953 [Non-patent literature]
[0013] [Non-Patent Document 1] Zidie Pu et al. Effect of F content on the structure, viscosity and dielectric properties of SiO2-Al2O3-B2O3-RO-TiO2 glasses. Journal of Non-Crystalline Solids. Volume563, 1 July 2021,120817 Summary of the Invention [Problem to be solved by the invention]
[0014] An object of the present invention is to provide a glass composition for low dielectric constant substrates that is capable of bonding crystalline compounds at lower temperatures (approximately 900°C or lower) without limiting the type of crystals to be precipitated and without impairing the properties of crystalline compounds having the desired low dielectric constant and low dielectric loss characteristics. [Means for solving the problem]
[0015] The invention of claim 1 relates to a glass composition for low dielectric constant substrates that binds crystalline compounds having low dielectric constant and low dielectric loss properties, the glass composition for low dielectric constant substrates comprising the following composition: 8 to 17 mol% F2, 25 to 50 mol% SiO2, 5 to 15 mol% Al2O3, 15 to 40 mol% B2O3, 4 to 11 mol% CaO, 8 mol% or less MgO, 10 mol% or less SrO, and 1 to 10 mol% ZnO.
[0016] A second aspect of the present invention relates to the glass composition for low dielectric constant substrates according to the first aspect, wherein the glass composition for low dielectric constant substrates has a relative dielectric constant of 4.7 or less at a frequency of 10 GHz.
[0017] The invention according to claim 3 is characterized in that the glass composition for a low dielectric constant substrate has a dielectric loss tangent of 2.5×10 -3 The present invention relates to a glass composition for low dielectric constant substrates according to claim 1, which is as follows:
[0018] A fourth aspect of the present invention relates to the glass composition for a low dielectric constant substrate according to any one of the first to third aspects, wherein the glass composition for a low dielectric constant substrate has a glass transition temperature of 600° C. or lower. [Effects of the Invention]
[0019] According to a glass composition for low dielectric substrates according to claim 1, there is provided a glass composition for low dielectric substrates that binds crystalline compounds having low dielectric constant and low dielectric loss properties, characterized in that the glass composition for low dielectric substrates contains the following composition: 8 to 17 mol% F2, 25 to 50 mol% SiO2, 5 to 15 mol% Al2O3, 15 to 40 mol% B2O3, 4 to 11 mol% CaO, 8 mol% or less MgO, 10 mol% or less SrO, and 1 to 10 mol% ZnO, and has the excellent effect of being able to bind crystalline compounds at low temperatures without impairing the properties of the crystalline compounds having low dielectric constant and low dielectric loss.
[0020] According to the glass composition for low dielectric constant substrates according to claim 2, the glass composition for low dielectric constant substrates is characterized in that the relative dielectric constant at a frequency of 10 GHz is 4.7 or less, and has the excellent effect of being able to bond crystalline compounds without impairing the properties of the crystalline compounds having a low dielectric constant and low dielectric loss, and without attenuating signals in the circuit of the substrate.
[0021] According to a third aspect of the present invention, the glass composition for a low dielectric constant substrate has a dielectric loss tangent of 2.5×10 -3 Since the present invention is characterized by the following, it has the excellent effect of being able to bind crystalline compounds without impairing the properties of the crystalline compounds having a low dielectric constant and low dielectric loss, and without impeding high-speed signal propagation.
[0022] According to the glass composition for low dielectric constant substrates according to claim 4, the glass composition for low dielectric constant substrates is characterized by having a glass transition temperature of 600°C or lower. This has the advantageous effect of preventing an increase in reactivity of the glass composition for low dielectric constant substrates with crystalline compounds to which the glass composition for low dielectric constant substrates is bound, and thus preventing an increase in attenuation of the circuit as a substrate or a decrease in the signal propagation speed. DETAILED DESCRIPTION OF THE INVENTION
[0023] The glass composition for a low dielectric constant substrate according to the present invention will be described in detail below.
[0024] Although the glass composition for a low dielectric constant substrate of the present invention is exemplified as an aluminoborosilicate glass composition, it goes without saying that this is merely one example.
[0025] The glass composition for low dielectric constant substrates of the present invention, which contains 8 to 17 mol% of F2, 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 4 to 11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO, is in an amorphous state. However, it is also possible to use a glass composition for low dielectric constant substrates that has been crystallized to a degree that does not have an effect on signal attenuation in the circuit of the substrate or slow down signal propagation.
[0026] In the glass composition for low-dielectric-constant substrates included in the present invention, F2 is an essential component, and the F2 content is preferably 8 to 17 mol%. If the F2 content is less than 8 mol%, the softening temperature of the glass composition for low-dielectric-constant substrates becomes high, making it impossible to obtain a dense substrate bonded with the glass composition for low-dielectric-constant substrates, resulting in a deterioration in dielectric properties and a weakened signal strength. If the F2 content exceeds 17 mol%, crystallization of the glass occurs, resulting in a deterioration in dielectric properties and a weakened signal strength. If the F2 content is 8 to 12 mol%, the crystalline compound can be bonded at a low temperature without impairing the properties of the crystalline compound, which has a lower dielectric constant and lower dielectric loss, compared to an F2 content of more than 12 mol% but not more than 17 mol%.
[0027] In the glass composition for low-dielectric-constant substrates included in the present invention, SiO2 is an essential component, and an SiO2 content of 25 to 50 mol% is desirable. If the SiO2 content is less than 25 mol%, it is difficult to form glass, and if the SiO2 content exceeds 50 mol%, the softening temperature of the glass composition for low-dielectric-constant substrates becomes high, making it impossible to obtain a dense substrate bonded with the glass composition for low-dielectric-constant substrates. Furthermore, if the SiO2 content is 35 to 47 mol%, vitrification is easier than with an SiO2 content of 25 mol% or more but less than 35 mol%, and crystalline compounds can be bonded at low temperatures without deteriorating the dielectric properties as much as with an SiO2 content of more than 47 mol% but less than 50 mol%.
[0028] In the glass composition for low dielectric constant substrates included in the present invention, Al2O3 is an essential component, and an Al2O3 content of 5 to 15 mol% is desirable. If the Al2O3 content is less than 5 mol%, it is difficult to form glass, and if the Al2O3 content exceeds 15 mol%, the softening temperature of the glass composition for low dielectric constant substrates becomes high, making it impossible to obtain a dense substrate bonded with the glass composition for low dielectric constant substrates. Furthermore, if the Al2O3 content is 5 to 12 mol%, crystallization is less likely to occur and crystalline compounds can be bonded at low temperatures than if the Al2O3 content is more than 12 mol% but not more than 15 mol%.
[0029] In the glass composition for low dielectric constant substrates included in the present invention, B2O3 is an essential component, and a B2O3 content of 15 to 40 mol% is desirable. A B2O3 content of less than 15 mol% results in poor dielectric properties, while a B2O3 content of more than 40 mol% reduces chemical durability, making it impossible to obtain a dense substrate with stably bonded crystalline compounds. Furthermore, a B2O3 content of 15 to 30 mol% can prevent a decrease in chemical durability, such as water resistance, acid resistance, and alkali resistance, compared to a B2O3 content of more than 30 mol% but not more than 40 mol%.
[0030] In the glass composition for low dielectric constant substrates included in the present invention, CaO is an essential component, and a CaO content of 4 to 11 mol% is desirable. If the CaO content is less than 4 mol%, the softening temperature becomes high, and if the CaO content exceeds 11 mol%, the dielectric properties of the glass composition for low dielectric constant substrates deteriorate, making it impossible to obtain a dense substrate with stably bound crystalline compounds. Furthermore, if the CaO content is 5 to 11 mol%, the crystalline compounds can be bound at a lower temperature than if the CaO content is more than 4 mol% but less than 5 mol%.
[0031] In the glass composition for low dielectric constant substrates included in the present invention, MgO is an optional component, and the MgO content is preferably 0 to 8 mol%. If the MgO content exceeds 8 mol%, it becomes difficult to produce glass from the glass composition for low dielectric constant substrates, and chemical durability decreases, making it impossible to obtain a dense substrate with stably bound crystalline compounds. If the MgO content is 0 to 5 mol%, it is possible to prevent a decrease in chemical durability such as water resistance, acid resistance, and alkali resistance, and a decrease in dielectric properties, compared to when the MgO content is more than 5 mol% but not more than 8 mol%.
[0032] In the glass composition for low dielectric constant substrates included in the present invention, SrO is an optional component, and the SrO content is preferably 0 to 10 mol%. If the SrO content exceeds 10 mol%, it becomes difficult to produce glass from the glass composition for low dielectric constant substrates, and chemical durability decreases, making it impossible to obtain a dense substrate in which crystalline compounds are stably bound. Furthermore, if the SrO content is 0 to 5 mol%, it is possible to prevent deterioration in chemical durability such as water resistance, acid resistance, and alkali resistance and deterioration in dielectric properties more effectively than if the SrO content is more than 5 mol% but not more than 10 mol%.
[0033] In the glass composition for low dielectric constant substrates included in the present invention, ZnO is an essential component, and a ZnO content of 1 to 10 mol% is desirable. A ZnO content of less than 1 mol% increases the softening temperature, while a ZnO content of more than 10 mol% reduces the dielectric properties of the glass composition for low dielectric constant substrates, making it impossible to obtain a dense substrate with stably bound crystalline compounds. A ZnO content of 1 to 5 mol% can prevent a decrease in chemical durability, such as water resistance, acid resistance, and alkali resistance, and a decrease in dielectric properties, compared to a ZnO content of more than 5 mol% but not more than 10 mol%.
[0034] The glass composition for low dielectric constant substrates included in the present invention may contain the following composition: 8 to 12 mol% F2, 27 to 47 mol% SiO2, 5 to 12 mol% Al2O3, 15 to 37 mol% B2O3, 5 to 11 mol% CaO, 5 mol% or less MgO, 5 mol% or less SrO, and 1 to 5 mol% ZnO, and it is of course possible to adjust the content of each component as appropriate as long as the composition can be bound without impairing the properties of the crystalline compound having a low dielectric constant and low dielectric loss.
[0035] In the glass composition for low dielectric constant substrates included in the present invention, the glass transition temperature of the glass composition for low dielectric constant substrates is desirably 600° C. or lower. If the glass transition temperature exceeds 600° C., the heat treatment requires an excessive amount of heat and time. As a result, the reactivity of the glass composition for low dielectric constant substrates of the present invention with the crystalline compound to which it is bound increases, which may lead to increased attenuation of the circuit as a substrate or slower signal propagation.
[0036] On the other hand, when the glass transition temperature of the glass composition for low dielectric constant substrates of the present invention is 600°C or lower, the reactivity of the glass composition for low dielectric constant substrates of the present invention with the crystalline compound to which it is bound is not increased, and the attenuation of the circuit as a substrate and the high-speed propagation of signals are not hindered.
[0037] In the glass composition for low dielectric substrates included in the present invention, the glass composition for low dielectric substrates is preferably capable of binding crystalline compounds at a heat treatment temperature of not more than 900° C. If the heat treatment temperature is higher than 900° C., the glass composition for low dielectric substrates becomes more likely to react with the bound crystalline compounds, which may lead to increased attenuation of the circuit as a substrate or slower signal propagation.
[0038] In the glass composition for low dielectric constant substrates included in the present invention, the crystalline compound having low dielectric constant and low dielectric loss properties bound in the glass composition for low dielectric constant substrates is preferably at least one selected from the group consisting of gahnite, forsterite, willemite, mullite, cordierite, steatite, enstatite, diopsite, and anorthite, but is not limited thereto.
[0039] It is desirable that the glass composition for a low dielectric constant substrate of the present invention is amorphous, but this is merely one example, and it goes without saying that the glass composition for a low dielectric constant substrate may crystallize during heat treatment as long as it reacts with the crystalline compound to which it is bound, thereby reducing the attenuation of the circuit as a substrate, and does not impede high-speed signal propagation. [Example]
[0040] The effects of the present invention will be more clearly demonstrated by showing examples of the glass composition for low dielectric constant substrates according to the present invention below, but the present invention is not limited to the following examples.
[0041] <Method of making frit> After mixing 100 g of raw material powders weighed to achieve a predetermined component ratio, the raw material powders were placed in a chamotte crucible and melted at 1300°C for 30 minutes to produce a melt. The melt was then poured into water and quenched to form a frit.
[0042] <How to make frit powder> The prepared frit was pulverized using a pulverizer (such as a ball mill or a planetary ball mill) to an average particle size (D50) of 4 to 20 μm. The average particle size (D50) of 4 to 20 μm was confirmed using a laser particle size distribution analyzer (model number: MT3300 EXII (manufactured by Microtrac BEL)).
[0043] <Simultaneous Differential Thermal and Thermogravimetric Analysis (TG-DTA) of Glass Compositions for Low-Dielectric-Constant Substrates> The glass transition temperature (Tg: unit: ° C.) was measured using a differential thermal analyzer TG-DTA STD2500 (manufactured by NETZSCH).
[0044] <Vitrification of glass composition for low dielectric constant substrates> In the results of the Examples, the glass compositions for low dielectric constant substrates that were vitrified were marked with ◯, and those that were not vitrified were marked with ×.
[0045] <Dielectric constant measurement> The relative permittivity (εr) and dielectric loss tangent (tanδ) at 10 GHz were measured using a dielectric constant measuring device, a cavity resonator ADMS01Nc1 (manufactured by AET).
[0046] The compositions and measured data shown in Examples 1 to 12 are summarized in Table 1 below.
[0047] [Table 1]
[0048] The compositions and measured data shown in Comparative Examples 1 to 17 are summarized below in Tables 2-1 and 2-2.
[0049] [Table 2-1]
[0050] [Table 2-2]
[0051] In Examples 1 to 7 and 10 to 12, the glass compositions for low dielectric constant substrates were each composed of 8 to 17 mol% F2, 25 to 50 mol% SiO2, 5 to 15 mol% Al2O3, 15 to 40 mol% B2O3, 4 to 11 mol% CaO, 8 mol% or less MgO, 10 mol% or less SrO, and 1 to 10 mol% ZnO, and the presence or absence of vitrification, the relative dielectric constant (εr), the dielectric loss tangent (tanδ), and the glass transition temperature (°C) were evaluated and measured.
[0052] As a result, the vitrification evaluation was ◯ for all of Examples 1 to 7 and 10 to 12. In addition, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz for Examples 1 to 7 and 10 to 12 was 4.7 or less, and the dielectric loss tangent (tanδ) was 2.5×10 -3 Furthermore, in simultaneous differential thermal analysis-thermogravimetry (TG-DTA), the glass transition temperatures (°C) were 600°C or less. From the above, it is clear that Examples 1 to 7 and 10 to 12 have very good physical properties as glass compositions for low dielectric constant substrates of the present invention.
[0053] In Examples 8 and 9, the glass compositions for low dielectric constant substrates were made by combining components in proportions within the ranges of 8-17 mol% F2, 25-50 mol% SiO2, 5-15 mol% Al2O3, 15-40 mol% B2O3, 4-11 mol% CaO, and 1-10 mol% ZnO, and the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition temperature (°C) were evaluated and measured. These examples do not contain the optional components MgO and SrO.
[0054] In Examples 8 and 9, the evaluation of vitrification was all good. In addition, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz in Examples 8 and 9 was 4.7 or less, and the dielectric loss tangent (tanδ) was 2.5×10 -3Furthermore, in simultaneous differential thermal analysis-thermogravimetry (TG-DTA), the glass transition temperatures (°C) were 600°C or less, respectively. From the above, it is clear that Examples 8 and 9 have very good physical properties as glass compositions for low dielectric constant substrates of the present invention.
[0055] In Comparative Example 1, the glass composition for low dielectric constant substrates contained less than 8 mol% of F2, and the other components were 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 4 to 11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO, and the presence or absence of vitrification, the relative dielectric constant (εr), the dielectric loss tangent (tanδ), and the glass transition temperature (°C) were evaluated and measured.
[0056] In Comparative Example 1, the evaluation of vitrification was good. In addition, the dielectric constant measurement results showed that the relative dielectric constant (εr) at a frequency of 10 GHz was 4.7 or less, and the dielectric loss tangent (tanδ) was 2.5×10 -3 The results were as follows. However, simultaneous differential thermal analysis-thermogravimetric analysis (TG-DTA) revealed that the glass transition temperature (°C) was 627°C, exceeding 600°C. When the glass transition temperature (°C) exceeds 600°C, the amount of heat and time required for heat treatment increases. This increases the reactivity of the glass composition for low dielectric constant substrates of the present invention with the crystalline compounds to which it is bound, leading to increased attenuation of the circuit as a substrate and slower signal propagation. From the above, it is clear that Comparative Example 1 has physical properties that are not suitable for use as a glass composition for low dielectric constant substrates of the present invention.
[0057] In Comparative Examples 2 and 3, the glass compositions for low dielectric constant substrates contained more than 17 mol% of F2 and more than 11 mol% of CaO, with other components being 25 mol% to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO, and the presence or absence of vitrification, the relative dielectric constant (εr), the dielectric loss tangent (tanδ), and the glass transition temperature (°C) were evaluated and measured.
[0058] In Comparative Examples 2 and 3, the evaluation of vitrification was good. In addition, the dielectric constant measurement results showed that the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and the dielectric loss tangent (tanδ) was 2.5×10 -3 or less. Furthermore, in simultaneous differential thermal analysis-thermogravimetry (TG-DTA), the glass transition temperature (°C) was 600°C or less. When the relative dielectric constant (εr) exceeded 4.7, the dielectric properties deteriorated and the signal intensity weakened. From the above, it became clear that Comparative Examples 2 and 3 had physical properties that were not suitable for use as glass compositions for low dielectric constant substrates of the present invention.
[0059] In Comparative Examples 4 and 5, the glass compositions for low dielectric constant substrates contain more than 17 mol% of F, less than 15 mol% of BO, and more than 11 mol% of CaO, and the other compositions contain 25 mol% to 50 mol% of SiO 2、 The materials were combined to achieve ratios within the range of 5-15 mol% Al2O3, 8 mol% or less MgO, 10 mol% or less SrO, and 1-10 mol% ZnO, and the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition temperature (°C) were evaluated and measured.
[0060] In Comparative Examples 4 and 5, the evaluation of vitrification was "x" and vitrification was not performed. Note that, since Comparative Examples 4 and 5 were not vitrified, dielectric constant measurement and simultaneous differential thermal-thermogravimetric analysis (TG-DTA) were not performed. From the above, it is clear that Comparative Examples 4 and 5 have physical properties that are not suitable as glass compositions for low dielectric constant substrates of the present invention.
[0061] In Comparative Example 6, the glass composition for low dielectric constant substrates contains more than 17 mol% of F2 and more than 10 mol% of SrO, and other components are 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, and 4 to 11 mol% of CaO. 、 The samples were combined to have ratios within the range of 8 mol% or less of MgO and 10 mol% or less of ZnO, and the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition temperature (°C) were evaluated and measured.
[0062] In Comparative Example 6, the evaluation of vitrification was good. In addition, the dielectric constant measurement results showed that the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and the dielectric loss tangent (tanδ) was 2.5×10 -3 or less. Furthermore, in simultaneous differential thermal analysis-thermogravimetry (TG-DTA), the glass transition temperature (°C) was 600°C or less. When the relative dielectric constant (εr) exceeded 4.7, the dielectric properties deteriorated and the signal intensity weakened. From the above, it was clear that Comparative Example 6 had physical properties that were not suitable for use as a glass composition for low dielectric constant substrates of the present invention.
[0063] In Comparative Examples 7 and 8, the glass compositions for low dielectric constant substrates contained less than 5 mol% Al2O3, and other components were combined to satisfy the following proportions within the ranges: 8 to 17 mol% F2, 25 to 50 mol% SiO2, 15 to 40 mol% B2O3, 4 to 11 mol% CaO, 8 mol% or less MgO, 10 mol% or less SrO, and 1 to 10 mol% ZnO, and the presence or absence of vitrification, the relative dielectric constant (εr), the dielectric loss tangent (tanδ), and the glass transition temperature (°C) were evaluated and measured.
[0064] In Comparative Examples 7 and 8, the evaluation of vitrification was ×, and vitrification did not occur. Note that, since Comparative Examples 7 and 8 were not vitrified, dielectric constant measurement and simultaneous differential thermal-thermogravimetric analysis (TG-DTA) were not performed. From the above, it was clear that Comparative Examples 7 and 8 had physical properties that were not suitable as glass compositions for low dielectric constant substrates of the present invention.
[0065] In Comparative Example 9, the glass composition for low dielectric constant substrates contained more than 50 mol% of SiO2 and less than 15 mol% of B2O3, with other components being 8 to 17 mol% of F2, 5 to 15 mol% of Al2O3, 4 to 11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO, and the presence or absence of vitrification, the relative dielectric constant (εr), the dielectric loss tangent (tanδ), and the glass transition temperature (°C) were evaluated and measured.
[0066] In Comparative Example 9, the evaluation of vitrification was good. In addition, the dielectric constant measurement results showed that the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and the dielectric loss tangent (tanδ) was 2.5×10 -3 The results exceeded 100°C. In addition, in simultaneous differential thermal analysis-thermogravimetry (TG-DTA), the glass transition temperature (°C) was 600°C or lower. When the relative dielectric constant (εr) exceeded 4.7, the dielectric properties deteriorated and the signal intensity weakened. From the above, it was clear that Comparative Example 9 had physical properties that were not suitable for use as a glass composition for low dielectric constant substrates of the present invention.
[0067] In Comparative Examples 10 and 11, the glass compositions for low dielectric constant substrates contain more than 11 mol% of CaO, and other compositions are 8 to 17 mol% of F, 25 to 50 mol% of SiO, 5 to 15 mol% of AlO, and 15 to 40 mol% of BO. 3、 The samples were combined to have ratios within the range of 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO, and were evaluated and measured for the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition temperature (°C).
[0068] In Comparative Examples 10 and 11, the evaluation of vitrification was ◯. In addition, the dielectric constant measurement results showed that the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7. In addition, in the dielectric loss tangent (tanδ), both Comparative Examples 10 and 11 were 2.5×10 -3In addition, in the simultaneous differential thermal analysis-thermogravimetric analysis (TG-DTA), the glass transition temperatures (°C) of Comparative Examples 10 and 11 were 600°C or lower. From the above, it was revealed that the physical properties of Comparative Examples 10 and 11 were not suitable as glass compositions for low dielectric constant substrates of the present invention.
[0069] In Comparative Example 12, the glass composition for low dielectric constant substrates contains less than 8 mol% of F2 and more than 10 mol% of ZnO, and other components are 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, and 4 to 11 mol% of CaO. 、 The samples were combined to have ratios within the range of 8 mol% or less of MgO and 10 mol% or less of SrO, and the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition temperature (°C) were evaluated and measured.
[0070] In Comparative Example 12, the evaluation of vitrification was good. In addition, the dielectric constant measurement results showed that the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and the dielectric loss tangent (tanδ) was 2.5×10 -3 The results exceeded 100°C. In addition, in simultaneous differential thermal analysis-thermogravimetry (TG-DTA), the glass transition temperature (°C) was 600°C or lower. When the relative dielectric constant (εr) exceeded 4.7, the dielectric properties deteriorated and the signal intensity weakened. From the above, it was clear that Comparative Example 12 had physical properties that were not suitable for use as a glass composition for low dielectric constant substrates of the present invention.
[0071] In Comparative Example 13, the glass composition for low dielectric constant substrates contained less than 8 mol% of F2 and more than 8 mol% of MgO, and other components were 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, and 4 to 11 mol% of CaO. 、 The samples were combined to have ratios in the range of 10 mol% or less of SrO and 1 to 10 mol% of ZnO, and the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition temperature (°C) were evaluated and measured.
[0072] In Comparative Example 13, the evaluation of vitrification was good. In addition, the dielectric constant measurement results showed that the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and the dielectric loss tangent (tanδ) was 2.5×10 -3 or less. Furthermore, in simultaneous differential thermal analysis-thermogravimetry (TG-DTA), the glass transition temperature (°C) was 600°C or less. When the relative dielectric constant (εr) exceeded 4.7, the dielectric properties deteriorated and the signal intensity weakened. From the above, it was clear that Comparative Example 13 had physical properties that were not suitable for use as a glass composition for low dielectric constant substrates of the present invention.
[0073] In Comparative Example 14, the glass composition for low dielectric constant substrates contains more than 8 mol% of MgO, and other components are 8 to 17 mol% or less of F2, 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, and 4 to 11 mol% of CaO. 、 The samples were combined to have ratios in the range of 10 mol% or less of SrO and 1 to 10 mol% of ZnO, and the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition temperature (°C) were evaluated and measured.
[0074] In Comparative Example 14, the evaluation of vitrification was good. In addition, the dielectric constant measurement results showed that the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and the dielectric loss tangent (tanδ) was 2.5×10 -3 The results exceeded 100°C. In addition, in simultaneous differential thermal analysis-thermogravimetry (TG-DTA), the glass transition temperature (°C) was 600°C or lower. When the relative dielectric constant (εr) exceeded 4.7, the dielectric properties deteriorated and the signal intensity weakened. From the above, it was clear that Comparative Example 14 had physical properties that were not suitable for use as a glass composition for low dielectric constant substrates of the present invention.
[0075] In Comparative Example 15, the glass composition for low dielectric constant substrates contained more than 11 mol% of CaO and more than 10 mol% of ZnO, with other components being 8 to 17 mol% or less of F2, 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 8 mol% or less of MgO, and 10 mol% or less of SrO, and the presence or absence of vitrification, the relative dielectric constant (εr), the dielectric loss tangent (tanδ), and the glass transition temperature (°C) were evaluated and measured.
[0076] In Comparative Example 15, the evaluation of vitrification was good. In addition, the dielectric constant measurement results showed that the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and the dielectric loss tangent (tanδ) was 2.5×10 -3 or less. Furthermore, in simultaneous differential thermal analysis-thermogravimetry (TG-DTA), the glass transition temperature (°C) was 600°C or less. When the relative dielectric constant (εr) exceeded 4.7, the dielectric properties deteriorated and the signal intensity weakened. From the above, it became clear that the physical properties of Comparative Example 15 were not suitable as a glass composition for low dielectric constant substrates of the present invention.
[0077] In Comparative Example 16, the glass composition for low dielectric constant substrates contained more than 8 mol% MgO, and other components were combined to satisfy proportions within the following ranges: 8 to 17 mol% or less F2, 25 to 50 mol% SiO2, 5 to 15 mol% Al2O3, 15 to 40 mol% B2O3, 4 to 11 mol% CaO, 10 mol% or less SrO, and 1 to 10 mol% ZnO, and the presence or absence of vitrification, the relative dielectric constant (εr), the dielectric loss tangent (tanδ), and the glass transition temperature (°C) were evaluated and measured.
[0078] In Comparative Example 16, the evaluation of vitrification was good. In addition, the dielectric constant measurement results showed that the relative dielectric constant (εr) at a frequency of 10 GHz was 4.7 or less, and the dielectric loss tangent (tanδ) was 2.5×10 -3The results were as follows. However, in simultaneous differential thermal analysis-thermogravimetric analysis (TG-DTA), the glass transition temperature (°C) was 603°C, exceeding 600°C. When the glass transition temperature (°C) exceeds 600°C, the heat treatment requires additional heat and time. This increases the reactivity of the glass composition for low dielectric constant substrates of the present invention with the crystalline compounds to which it is bound, leading to increased attenuation of the circuit as a substrate and slower signal propagation. From the above, it is clear that Comparative Example 16 has physical properties that are not suitable for use as a glass composition for low dielectric constant substrates of the present invention.
[0079] In Comparative Example 17, the glass composition for low dielectric constant substrates contained less than 15 mol% B2O3, less than 4 mol% CaO, more than 8 mol% MgO, and more than 10 mol% ZnO, with other components being 8 to 17 mol% or less F2, 25 to 50 mol% SiO2, 5 to 15 mol% Al2O3, and 10 mol% or less SrO, and the presence or absence of vitrification, the relative dielectric constant (εr), the dielectric loss tangent (tanδ), and the glass transition temperature (°C) were evaluated and measured.
[0080] In Comparative Example 17, the evaluation of vitrification was good. In addition, the dielectric constant measurement results showed that the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and the dielectric loss tangent (tanδ) was 2.5×10 -3 or less. Furthermore, in simultaneous differential thermal analysis-thermogravimetry (TG-DTA), the glass transition temperature (°C) was 600°C or less. When the relative dielectric constant (εr) exceeded 4.7, the dielectric properties deteriorated and the signal intensity weakened. From the above, it was clear that Comparative Example 17 had physical properties that were not suitable for use as a glass composition for low dielectric constant substrates of the present invention. [Industrial Applicability]
[0081] The glass composition for low-dielectric-constant substrates according to the present invention can be suitably used as a material for various substrates, including LTCC substrates used in devices and antennas compatible with the 30 to 300 GHz range. The present invention also provides a glass composition for low-dielectric-constant substrates that prevents signal attenuation in the substrate in the high-frequency range, has a low dielectric constant, and exhibits low dielectric loss.
Claims
1. A glass composition for a low dielectric constant substrate, which binds a crystalline compound having low dielectric constant and low dielectric loss characteristics, comprising: The glass composition for a low dielectric constant substrate has the following composition: 8 to 17 mol% F 2 , 25 to 50 mol% SiO 2 , 5 to 15 mol% Al 2 O 3 , 15 to 40 mol% B 2 O 3 , 4 to 11 mol% CaO, 8 mol % or less of MgO, 10 mol % or less of SrO, and A glass composition for a low dielectric constant substrate, comprising 1 to 10 mol % of ZnO.
2. 2. The glass composition for a low dielectric constant substrate according to claim 1, wherein the glass composition for a low dielectric constant substrate has a relative dielectric constant of 4.7 or less at a frequency of 10 GHz.
3. The glass composition for low dielectric constant substrates has a dielectric loss tangent of 2.5×10 -3 2. The glass composition for a low dielectric constant substrate according to claim 1, wherein:
4. 4. The glass composition for a low dielectric constant substrate according to claim 1, wherein the glass composition for a low dielectric constant substrate has a glass transition temperature of 600°C or lower.
Citation Information
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