Superconducting transition edge sensor

Abstract

To provide a superconducting transition edge sensor.SOLUTION: A superconducting transition edge sensor includes a superconducting absorber having a central absorber portion. One or more protrusions extend outward from the central absorber portion. The superconducting absorber is positioned overlying a substrate material. To allow energy absorbed by the superconducting absorber to be dissipated, a thermal pathway is provided between the superconducting absorber and the substrate material. One or more heat sinks are also provided. Each heat sink is positioned to overlap a corresponding protrusion of the superconducting absorber. Each heat sink also has a portion extending beyond the corresponding protrusion to define a separate thermal pathway from the heat sink to the substrate material.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This document relates generally to cryogenic detectors and, in particular, to superconducting transition edge sensors. [Background technology]

[0002] The following is not an admission that anything discussed below is part of the prior art or part of the common general knowledge of those skilled in the art.

[0003] Superconducting transition edge sensors can be used to measure the energy transmitted by a pulse of optical radiation. Superconducting transition edge sensors can be applied as photon number resolved (PNR) detectors that can characterize the number of incident photons in an incident optical pulse. These PNR detectors can be applied to perform photon number resolution on multiphoton states.

[0004] Photon-number-resolving detectors based on superconducting transition edge sensors can resolve the number of photons for events containing a large number of photons. These detectors can also achieve system detection efficiencies (ratio of converted electrons to incident photons) of over 99%. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] U.S. Patent Application Serial No. 18 / 538,154 Summary of the Invention [Means for solving the problem]

[0006] The following introduction is provided to introduce the reader to the more detailed discussion that follows. This introduction is not intended to limit or define the claimed or presently unclaimed inventions. One or more inventions may reside in any combination or subcombination of elements or process steps disclosed in any part of this document, including the claims and figures.

[0007] According to an aspect of the present disclosure, a superconducting transition edge sensor is provided. The superconducting transition edge sensor includes a superconducting absorber positioned overlying a substrate material. A thermal path is provided between the superconducting absorber and the substrate material to enable dissipation of energy absorbed by the superconducting absorber. The superconducting absorber includes a central absorber portion. One or more protrusions extend outward from the central absorber portion.

[0008] One or more heat sinks are also provided. The heat sinks also overlie the substrate material. Each heat sink includes a first portion positioned to overlie a corresponding protrusion of the superconducting absorber. Each heat sink also has a second heat sink portion that extends beyond the corresponding protrusion to define a separate thermal path from the heat sink to the substrate material. The separate thermal path from the heat sink to the substrate bypasses the superconducting absorber. Thus, the heat sink can improve the recovery rate of the superconducting absorber by providing an additional path for dissipating energy absorbed by the superconducting absorber while allowing the superconducting absorber to maintain a high level of energy resolution.

[0009] According to this aspect, a superconducting transition edge sensor (TES) is provided, comprising: a substrate; a superconducting absorber having one or more lateral protrusions, wherein an absorber thermal path thermally couples the superconducting absorber to the substrate; and one or more heat sinks, each of the one or more heat sinks (1) being in thermal contact with the substrate via the heat sink thermal path and (2) overlapping a lateral protrusion of the one or more lateral protrusions.

[0010] According to this aspect, there is also provided a superconducting transition edge sensor (TES) comprising: a substrate; a superconducting absorber having one or more lateral protrusions, wherein an absorber thermal path thermally couples the superconducting absorber to the substrate; and at least two heat sinks, each of the at least two heat sinks in partial contact with the one or more lateral protrusions.

[0011] Each of the heat sinks can be in thermal contact with the substrate via a heat sink thermal path.

[0012] The TES may include at least four heat sinks.

[0013] The TES may contain at least six heat sinks.

[0014] The TES may include one or more intermediate layers, in which case the absorber thermal path between the superconducting absorber and the substrate extends through the one or more intermediate layers.

[0015] A heat sink thermal path between each heat sink and the substrate can at least partially bypass the superconducting absorber.

[0016] Each layer of the one or more intermediate layers can include at least one of amorphous silicon, SiO2, a backside mirror, or a dielectric material.

[0017] A subset of one or more intermediate layers may define a distributed Bragg reflector.

[0018] At least one heat sink can include a first heat sink portion and a second heat sink portion, where the first heat sink portion overlaps a corresponding lateral protrusion and the second heat sink portion overlaps only one or more of the intermediate layers.

[0019] Each heat sink can include at least a first heat sink portion and a second heat sink portion, and for each heat sink, the first heat sink portion overlaps a corresponding lateral protrusion and the second heat sink portion overlaps only one or more of the intermediate layers.

[0020] The one or more protrusions can extend outwardly from the superconducting absorber along a lateral direction, and the second heat sink portion can extend outwardly from the first heat sink portion along a longitudinal direction perpendicular to the lateral direction.

[0021] The one or more protrusions can extend outwardly from the superconducting absorber along a side, and the second heat sink portion can extend outwardly from the first heat sink portion along a side.

[0022] The superconducting absorber, the one or more lateral protrusions, and the second heat sink portion of each heat sink can be in direct contact with and can directly overlap at least some of the intermediate layers.

[0023] The area of ​​the second heat sink portion may be at least 5% of the area of ​​the first heat sink portion.

[0024] The area of ​​the first heat sink portion may be at least 5% of the area of ​​the second heat sink portion.

[0025] The area of ​​the first heat sink portion may be less than or equal to the area of ​​the second heat sink portion.

[0026] The area of ​​the first heat sink portion may be no more than 50% of the area of ​​the second heat sink portion.

[0027] The superconducting absorber can include a central portion, and the lateral projections can extend outwardly from the central portion along the sides, and the central portion can have a lateral length of at least 15 μm and a longitudinal width of at least 15 μm.

[0028] The superconducting absorber can include a central portion, and the lateral protrusions can extend outwardly from the central portion along the sides, and the central portion can have a lateral length of at least 20 μm and a longitudinal width of at least 20 μm.

[0029] The superconducting absorber may include a central portion, and the lateral projections may extend outwardly from the central portion along the sides, and the central portion may have a first width extending along a longitudinal direction perpendicular to the sides, and each lateral projection may have a second longitudinal width, the first width being significantly greater than the second width.

[0030] The second width can be in the range of about 0.5% to about 30% of the first width.

[0031] The second width can be in the range of about 3% to about 19% of the first width.

[0032] The second width can be in the range of about 2.5% to about 10% of the first width.

[0033] The second width can be in the range of about 4% to about 11% of the first width.

[0034] The second width can be in the range of about 0.5 μm to about 3 μm.

[0035] The second width can be in the range of about 0.9 μm to about 2.2 μm.

[0036] The second width may be at most 1.2 μm.

[0037] The second width may be defined to maintain a superconducting order parameter of the superconducting absorber that would be present in the absence of the lateral protrusions.

[0038] The superconducting absorber may include a central portion, the lateral projections may extend laterally outwardly from the central portion, and each heat sink may be spaced laterally from the central portion by a first distance.

[0039] The central portion can have a first laterally extending length, and the first distance can be in the range of about 1% to about 40% of the first length.

[0040] The central portion can have a first laterally extending length, and the first distance can be in the range of about 3% to about 21% of the first length.

[0041] The central portion can have a first laterally extending length, and the first distance can be in the range of about 5% to about 15% of the first length.

[0042] The central portion can have a first laterally extending length, and the first distance can be in the range of about 5% to about 13% of the first length.

[0043] The first distance can be in the range of about 1 μm to about 4 μm.

[0044] The first distance can be in the range of about 1 μm to about 2.5 μm.

[0045] The first distance may be at most 2.5 μm.

[0046] Each heat sink may comprise gold.

[0047] The total volume of the heat sink is approximately 2 μm 3 ~about 30μm 3 can be in the range of

[0048] The total volume of the heat sink is approximately 5 μm 3 ~about 20μm 3 can be in the range of

[0049] The total volume of the heat sink is approximately 5 μm 3 ~about 15μm 3 can be in the range of

[0050] The total volume of the heat sink is approximately 8 μm 3 ~about 12μm 3 can be in the range of

[0051] The total volume of the heat sink is approximately 10 μm 3 may be.

[0052] The present disclosure also provides an energy sensor system comprising: a substrate; a superconducting absorber having one or more lateral protrusions, an absorber thermal path thermally coupling the superconducting absorber to the substrate; and one or more heat sinks, each of the one or more heat sinks (1) in thermal contact with the substrate via the heat sink thermal path and (2) overlying a lateral protrusion of the one or more lateral protrusions; a superconducting transition edge sensor (TES); an inductor connected in series with the TES; and a magnetometer inductively coupled to the inductor, wherein the TES is as described herein.

[0053] The energy sensor system can include at least one read lead coupling the TES to the inductor.

[0054] The energy sensor system can be configured to measure the change in current through the TES in response to photons deposited on the TES.

[0055] The magnetometer can be configured to detect changes in current through the TES in response to photons deposited on the TES.

[0056] It will be understood by those skilled in the art that the devices, systems, or methods disclosed herein may embody any one or more of the features contained herein, which features may be used in any specific combination or sub-combination.

[0057] These and other aspects and features of various embodiments are described in more detail below.

[0058] The figures included herein are intended to illustrate various examples of the articles, methods, and devices herein and are not intended to limit the scope of the teachings in any way. [Brief explanation of the drawings]

[0059] [Figure 1] FIG. 1 is a circuit diagram illustrating an exemplary energy sensor system including a superconducting transition edge sensor. [Figure 2] FIG. 2 is a simplified plan view of an exemplary superconducting transition edge sensor that may be used in the exemplary system of FIG. 1. [Figure 3] FIG. 3 is a cross-sectional view taken along line AA shown in FIG. 2. [Figure 4] 3 is a cross-sectional view taken along line BB shown in FIG. 2. [Figure 5] 3 is a cross-sectional view taken along line CC shown in FIG. 2. [Figure 6] FIG. 3 is a block diagram illustrating a simplified thermal model of the exemplary superconducting transition edge sensor shown in FIG. 2. [Figure 7A] FIG. 2 is a simplified plan view of another exemplary superconducting transition edge sensor that may be used in the exemplary system of FIG. 1. [Figure 7B] FIG. 2 is a simplified plan view of another exemplary superconducting transition edge sensor that may be used in the exemplary system of FIG. 1. DETAILED DESCRIPTION OF THE INVENTION

[0060] Various devices, processes, or configurations are described below to provide examples of claimed subject matter. The examples described below do not limit any claim, and any claim may encompass processes, devices, or configurations different from those described below. The claims are not limited to devices, processes, or configurations having all of the features of any one device, process, or configuration described below, or to features common to more than one or all of the devices, processes, or configurations described below. The devices, processes, or configurations described below may not be examples of the exclusive rights granted by the issuance of this patent application. Subject matter described below for which exclusive rights are not granted by the issuance of this patent application may be the subject of a separate protective document, e.g., a continuing patent application, and the applicant, inventor, or owner does not intend to abandon, abandon, or dedicate such subject matter to the public by the disclosure herein.

[0061] For simplicity and clarity of illustration, reference numerals may be repeated among the figures to indicate corresponding or similar elements. Additionally, numerous specific details are described to provide a thorough understanding of the subject matter described herein. However, it will be understood by those skilled in the art that the subject matter described herein may be practiced without these specific details. In other instances, well-known methods, procedures, and components have not been described in detail so as not to obscure the subject matter described herein. This description is not intended to limit the scope of the subject matter described herein.

[0062] The terms "coupled" or "coupled" as used herein can have several different meanings depending on the context in which the terms are used. For example, the terms coupled or coupled can have mechanical, electrical, or communicative connotations. For example, as used herein, the terms coupled or coupled can indicate that two elements or devices may be directly connected to each other, or may be connected to each other through one or more intermediate elements or devices via electrical elements, electrical signals, or mechanical elements, depending on the particular context. Furthermore, the term "communicatively coupled" may be used to indicate that an element or device can electrically, optically, or wirelessly transmit data to and receive data from another element or device.

[0063] As used herein, the word "and / or" is intended to mean an inclusive or. That is, "X and / or Y" is intended to mean, for example, X or Y or both. As another example, "X, Y, and / or Z" is intended to mean X or Y or Z or any combination thereof.

[0064] As used herein, terms of degree, such as "substantially," "about," and "approximately," refer to a reasonable amount of deviation from the modified term such that the end result is not materially altered. These terms of degree may also be interpreted as including deviations from the modified term when such deviations do not negate the meaning of the term they modify.

[0065] The recitation herein of numerical ranges by endpoints includes all numbers and fractions subsumed within that range (e.g., 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.90, 4, and 5). All numbers and fractions thereof are also presumed to be modified by the term "about," which should be understood to mean a variation of the referenced number up to the particular amount where the end result would not be materially altered.

[0066] The present disclosure relates to the construction of superconducting transition edge sensors. Superconducting transition edge sensors are devices that can be used to measure the energy transmitted by a pulse of optical radiation. Superconducting transition edge sensors can also be applied as photon number resolved (PNR) detectors that can accurately characterize the number of incident photons in an incident optical pulse. These PNR detectors can be applied to perform photon number resolution on multiphoton states.

[0067] Photon-number-resolving detectors based on superconducting transition edge sensors can resolve the number of photons for events containing a large number of photons. These detectors are also typically faster than conventional detectors and have system detection efficiencies (ratio of converted electrons to incident photons) greater than 99%.

[0068] In superconducting transition edge sensors, it is desirable to optimize both the recovery speed and resolution of the sensor. Maintaining or increasing the resolution of a superconducting transition edge sensor can increase the accuracy of detected events. This can be particularly useful in photon-number resolved applications to ensure that the sensor can distinguish between states with small energy differences. Reducing the recovery speed allows the sensor to detect subsequent light pulses more quickly, facilitating real-time applications of superconducting transition edge sensors, such as real-time photon number resolution.

[0069] Sensors capable of performing photon number resolution in real time are desirable for many applications. Real-time photon number resolution can enable real-time prediction of complex multiphoton states. For example, real-time photon number resolution can play an important role in the field of quantum optics, particularly in connection with the transition from Gaussian to non-Gaussian resources. Non-Gaussian resources, whether states, actions, or measurements, are essential or at least advantageous for many applications, such as quantum computing, quantum error correction, or quantum communication. The ability to distinguish between states with different photon numbers (especially in real time) is useful for the preparation of non-Gaussian quantum states, state characterization (tomography), increasing the probability of generating non-Gaussian quantum states through multiplexing, deterministic implementation of non-Gaussian actions using non-Gaussian ancillary states, and implementation of the KLM quantum protocol.

[0070] 1, a block diagram illustrating an exemplary energy sensor system 100 is shown herein. The exemplary energy sensor system 100 includes an energy detection circuit 116 and a sensor output circuit 120. The energy detection circuit 116 includes a superconducting transition edge sensor (TES) 110.

[0071] The TES 110 typically includes a superconducting absorber having a temperature-dependent electrical resistance. The absorber may be positioned to receive and absorb incident radiation (e.g., photons in a light pulse). The superconducting absorber acts both as an absorber and as a thermometer capable of measuring the energy of the incident radiation.

[0072] The superconducting absorber has a transition temperature such that, during operation, the absorber can be maintained on the edge of a phase transition. The power supply 102 can be controlled to maintain the superconducting absorber on the edge of a phase transition. As shown in FIG. 1, a bias current is driven through a resistive load (e.g., resistor 104) placed in parallel with the TES 110. This generates a voltage bias that maintains the TES 110 in its self-bias region.

[0073] When the TES 110 absorbs an incident light pulse (i.e., one or more photons), the temperature of the absorber is increased. This results in an increase in the resistance of the TES 110 and a corresponding drop in the current through the TES 110. This change in current through the TES 110 can then be measured to determine the energy associated with the light pulse absorbed by the TES 110.

[0074] For example, the TES 110 may be cooled to near or below its transition temperature (i.e., on the order of tens to hundreds of millikelvins) so that when a current is applied to bias the TES 110, the absorber operates along its transition curve. Absorption of one or more photons causes a temperature change in the absorber of the TES 110, thereby increasing the resistance of the TES 110 and creating a voltage drop across the TES 110. The voltage drop may be proportional to the number of photons absorbed by the TES 110.

[0075] By maintaining the absorber along its transition curve, a temperature change results in a relatively large increase in resistance, thereby facilitating measurement of the incident energy pulse. A voltage bias then allows the absorber, via negative electrothermal feedback, to return to its target temperature after receiving a thermal energy deposit. The absorber can be thermally coupled to a heat bath to allow it to dissipate energy from the incident photons. The heat bath can be maintained at a temperature well below the transition temperature to ensure that the absorber returns to its operating temperature after absorbing the incident light pulse.

[0076] 1, system 100 includes an inductor 106 inductively coupled to an output circuit 120. Output circuit 120 may include a magnetometer inductively coupled to inductor 106. In the illustrated example, the magnetometer is provided in the form of a SQUID array 108. Alternatively, a mechanical inductance detector may be used to measure changes in current passing through TES 110.

[0077] As shown, inductor 106 is coupled in series with TES 110. Thus, a change in the current through TES 110 (due to photon absorption) results in a change in the current through inductor 106, which in turn results in a change in the magnetic flux experienced by the magnetometer (i.e., SQUID array 108). The output from magnetometer 108 may then be output and measured at 114. The output from magnetometer 108 may be processed to determine the energy of the photons absorbed by TES 110 (and optionally the associated photon number of the incident light pulse).

[0078] A signal processor may be electrically coupled to the system 100 (e.g., the output 114 of the output circuit 120) and is positioned to receive electrical signal traces generated by the system 100 in response to incident light pulses received by the TES 110.

[0079] The signal processor may be implemented using one or more processors, such as a special purpose or general purpose microprocessor. The processor controls the operation of the signal processor and may typically include any suitable processor, such as a microprocessor, controller, digital signal processor, field programmable gate array, application specific integrated circuit, microcontroller, or other suitable computer processor capable of providing sufficient processing power depending on the desired configuration, purpose, and requirements of system 100.

[0080] The signal processor may include a processor, a power supply, memory, and a communications module operably coupled to the processor and to system 100. The memory may include RAM, ROM, one or more hard drives, one or more flash drives, or any other suitable data storage elements, such as a disk drive. Optionally, the signal processor may be operably coupled to at least one input device (e.g., a pushbutton keyboard, a mouse, a touchscreen, etc.) and at least one output device (e.g., a display screen).

[0081] Electrical signal traces from system 100 may be detected and recorded using a data acquisition system (e.g., output circuitry 120). The data acquisition system may be integrated into the signal processor. Alternatively, the data acquisition system may be external to and separate from the signal processor.

[0082] The data acquisition system may include suitable hardware circuitry and / or software components operable to detect and record electrical signal traces from the system 100. Optionally, the data acquisition system may include one or more amplifiers 112 to amplify the output electrical signal (i.e., voltage drop) of the TES 110. Optionally, the data acquisition system may include an analog-to-digital converter operable to digitize the electrical signal traces such that the electrical signal trace values ​​are quantized into discrete digital quantities. Alternatively, the data acquisition system may omit the analog-to-digital converter, for example, if the electrical signal traces are analyzed in the analog domain.

[0083] The non-transitory memory of the signal processor may store machine-readable instructions executable by one or more processors of the signal processor. The instructions stored in the non-transitory memory of the signal processor may be defined to cause the one or more processors to perform processes related to measuring the electrical signal trace, for example, determining the number of photons associated with the electrical signal trace.

[0084] Various signal processing techniques can be used to improve the recovery speed and resolution of superconducting transition edge sensors. For example, U.S. Patent Application No. 18 / 538,154 describes signal processing techniques that can be used to shorten the recovery time of photon-number-resolved detectors. However, these techniques are limited by the physical properties of the sensor that receives the incident photon energy. Improved superconducting transition edge sensor designs can further enable rapid, real-time measurement of incident photon energy and photon number resolution. In particular, it is desirable to shorten the sensor's recovery time (the time required for the absorber to return to its operating temperature) to enable real-time photon number resolution for high-throughput applications, while maintaining the sensor's resolution to ensure better detectability and specificity.

[0085] 2-5, there is shown an exemplary superconducting transition edge sensor 200. The exemplary superconducting transition edge sensor 200 may be used in an energy detection system, such as the superconducting transition edge sensor 110 shown in FIG. 1. The superconducting transition edge sensor 200 generally includes a substrate 328, a superconducting absorber 202, and one or more heat sinks 206.

[0086] As noted above, absorber 202 may be thermally coupled to a heat sink to allow it to dissipate energy from incident photons. In the example of TES 200, the heat sink may be provided by substrate 328. Energy from photons incident on absorber 202 may be dissipated into substrate 328 to allow absorber 202 to return to its operating temperature after measurement of the incident energy.

[0087] The superconducting absorber 202 is thermally coupled to the substrate 328 through an absorber thermal path. Heat generated by the absorber 202 (e.g., in response to absorbing photons) can be dissipated (at least partially) to the substrate 328 through the absorber thermal path.

[0088] 2 includes an absorber 202 having a substantially rectangular central portion 205. This can result in a more uniform current distribution on the absorber 202. Alternatively, other shapes may be used for the central portion 205, depending on the desired application of the TES 200.

[0089] The central portion 205 is intended to receive and absorb the incident pulse of light to be measured. For example, in system 100, the superconducting transition edge sensor 110 can be positioned to receive an incoming pulse of light from a light source. The light source can be provided as a component of system 100 or can be located separately from system 100 as an independent component or subcomponent of another system, external to it. The light source can be, for example, a pulsed photon source capable of generating faint laser pulses or a resonator or single-photon source capable of generating squeezed light pulses. The light source can include any suitable optical component usable to generate light pulses.

[0090] 2, central portion 205 has a length 205l extending laterally 232 and a width 205w extending longitudinally 230. In the illustrated example, central portion 205 is a square central portion with equal length 205l and width 205w.

[0091] 2, the absorber 202 also includes an overlap section 207. The overlap section 207 is in contact with the lead wire 208. The overlap section 207 provides coupling between the absorber 202 and the lead wire 208. The overlap section 207 extends from a central portion 205. The central portion 205 is exposed to allow it to receive incident radiation. The overlap section 207 may not be exposed (e.g., may be hidden by the lead wire 208) so that incident optical radiation does not directly contact the overlap section 207.

[0092] The size of the central portion 205 can be defined to allow a light pulse to be incident on the absorber surface (i.e., to ensure that a light source can be optically aligned with the central portion 205) while maintaining a desired heat capacity for the absorber 202.

[0093] The central portion 205 may be sized to ensure that the absorber 202 can be optically aligned to receive an incoming pulse of light. For example, the length 205l (and width 205w) may be specified to be at least about 10 μm. For an optical fiber having a core diameter on the order of about 5 μm or about 10 μm, this size allows the central portion 202, once properly aligned, to capture all of the light emitted from the optical fiber. Optionally, the length 205l (and width 205w) may be at least about 12 μm, or at least about 13 μm, to provide tolerance for misalignment between the optical fiber and the central portion 205. In some examples, the length 205l (and width 205w) may be at least about 15 μm.

[0094] Optionally, length 205l and width 205w may be at least 20 μm to provide additional tolerance for misalignment. Further optionally, length 205l and width 205w may be at least 30 μm to provide additional tolerance for misalignment. Optionally, length 205l and width 205w may be greater than about 70 μm.

[0095] As the size of the central portion 205 increases, the heat capacity of the absorber 202 increases, which increases the decay time after photon absorption (i.e., the time required for the absorber to return to its operating temperature) and therefore reduces the processing capacity of the absorber 202. This increase in heat capacity also reduces the detectability of the absorber 202 to individual photon absorption, thereby reducing the photon number resolution.

[0096] Optionally, length 205l (and width 205w) may be up to about 100 μm, which may provide increased tolerance for alignment of central portion 205 with the incoming light source without unduly affecting the heat capacity of absorber 202.

[0097] 2, the superconducting absorber 202 includes a central portion 205 and one or more lateral projections 204. Each lateral projection 204 extends outwardly away from the central portion 205. Each lateral projection 204 may also be referred to as a protrusion of the superconducting absorber 202.

[0098] In the illustrated example, each lateral protrusion 204 has the same dimensions (i.e., length 204l and width 204w). Alternatively, the lateral protrusions 204 may have different dimensions (e.g., different lengths, widths, and / or depths). Optionally, the protrusions 204 extending from one side of the central portion 205 may have a first set of dimensions, and the protrusions extending from another side of the central portion may have a second set of different dimensions (e.g., different lengths of the protrusions on either side of the central portion 205).

[0099] Each heat sink 206 is associated with a corresponding lateral protrusion 204 of the absorber 202. The lateral protrusions 204 provide a path for electrons and photons to travel between the central absorber portion 205 and the heat sink 206, thereby providing an additional thermal path for dissipating thermal energy through the heat sink 206 to the substrate 328.

[0100] 2, each lateral protrusion 204 is significantly smaller than central portion 205. The lateral protrusions 204 may be sized to provide a path to the heat sink 206 without substantially increasing the overall volume of the absorber 202. For example, one or more lateral protrusions 204 may be configured to substantially maintain the superconducting order parameter of the superconducting absorber 202 that would be present in the absence of the lateral protrusions 204.

[0101] 2, each lateral projection 204 extends outwardly from the central absorbent portion by a length 204l in a lateral direction 232. Each lateral projection 204 also has a width 204w extending in the longitudinal direction 230.

[0102] The width 204w of each protrusion 204 can be significantly smaller than the width 205w of the central portion 205. This can ensure that the protrusions 204 do not affect the overall size of the absorbent body 202. The protrusion width 204w can be in the range of about 0.5% to about 30% of the central portion width 205w. For example, the protrusion width 204w may be in the range of about 3% to about 19% of the central portion width 205w. Preferably, the protrusion width 204w may be in the range of about 2.5% to about 10% of the central portion width 205w, or in the range of about 3.5% to about 9.5% of the central portion width 205w.

[0103] The width 204w of each protrusion 204 can be selected to be large enough to provide a path for photons to travel from the central portion 205 to the corresponding heat sink 206. The width 204w of the protrusion can be at least about 0.5 μm. For example, the width 204w of the protrusion may be at least about 0.9 μm. This can ensure that photons can travel from the central portion 205 to the corresponding heat sink 206. This can also simplify the fabrication process for the TES 200.

[0104] Optionally, protrusion width 204w can be in the range of about 0.5 μm to about 5 μm. For example, protrusion width 204w can be in the range of about 0.5 μm to about 3 μm. Further optionally, protrusion width 204w can be in the range of about 0.9 μm to about 2.2 μm.

[0105] Optionally, the width 204w of the protrusions may be up to about 1.5 μm. Further optionally, the width 204w of the protrusions may be up to 1.2 μm.

[0106] For example, the inventors have found that in some applications, a protrusion width 204w of about 1.2 μm may be preferred to provide a balance between providing a photon path and minimizing the volume added to the absorber 202.

[0107] Each heat sink 206 is associated with a corresponding lateral protrusion 204 of the absorber 202. As shown in Figures 2 and 4, each heat sink 206 is positioned in direct contact with the corresponding lateral protrusion 204. Each heat sink 206 is positioned to at least partially overlap the corresponding lateral protrusion 204.

[0108] Each heat sink 206 may be positioned in partial contact with a corresponding lateral protrusion 204. For example, a surface of the heat sink 206 immediately adjacent the corresponding lateral protrusion 204 may be provided in direct contact with the corresponding protrusion 204.

[0109] Optionally, an intervening layer may be positioned between the heat sink 206 and the corresponding lateral protrusion 204. This may facilitate bonding of the heat sink material to the protrusion 204. For example, a thin layer of titanium may be deposited to allow the heat sink material to adhere to the corresponding protrusion 204.

[0110] Each heat sink 206 also provides a separate thermal path to the substrate 328 underlying the absorber 202. As can be seen in FIG. 2 , each heat sink 206 only partially overlaps the corresponding lateral protrusion 204. Each heat sink 206 includes a first heat sink portion 216 and a second heat sink portion 218. The first heat sink portion 216 of each heat sink 206 overlaps the corresponding protrusion 204. The second heat sink portion 218 of each heat sink 206 does not overlap the corresponding protrusion 204. This allows the heat sink 206 to provide a thermal path to the substrate 328 that bypasses the absorber 202. For example, at least a portion of the thermal path between the heat sink 206 and the substrate 328 may pass only through one or more intermediate layers (rather than the absorber 202), as shown in FIGS. 4 and 5 .

[0111] 2, each heat sink 206 has a length 206l extending laterally 232 and a width 206w extending in a longitudinal direction 230. The width 206w of each of one or more heat sinks 206 can be significantly greater than the width 204w of the corresponding lateral protrusion 204. Thus, the second heat sink portion 218 can extend beyond the corresponding lateral protrusion 204 in the longitudinal direction 230 (to one or both sides of the protrusion 204).

[0112] For example, the width 206w of each of the one or more heat sinks 206 may be in the range of about 1 μm to about 10 μm. Optionally, the width 206w of each of the one or more heat sinks 206 may be in the range of about 1 μm to about 5 μm.

[0113] For example, the length 206l of each of the one or more heat sinks 206 may be in the range of about 2 μm to about 20 μm. Optionally, the length 206l of each of the one or more heat sinks 206 may be in the range of about 4 μm to about 10 μm.

[0114] The heat sink aspect ratio of the length 206l to the width 206w of each heat sink 206 may be selected based on the space available for the heat sink material. For example, the TES 200 may have more available space on the sides 232 (due to the leads 208) than in the longitudinal direction 230. Thus, the heat sink aspect ratio may be specified to be greater than 1:1. Optionally, the heat sink aspect ratio may be specified to be greater than 2:1 to further optimize space utilization of the TES 200.

[0115] In some implementations, the length 206l and / or width 206w of the heat sink 206 may vary depending on the number of heat sinks 206 used. For example, the length 206l and / or width 206w of the heat sink 206 may vary to provide a desired total volume for heat sink material with a different number of heat sinks 206.

[0116] First heat sink portion 216 can have an area that is at least 5% of the area of ​​second heat sink portion 218. Optionally, first heat sink portion 216 may have an area that is equal to or less than the area of ​​second heat sink portion 218. In some examples, first heat sink portion 216 may have an area that is equal to or less than 50% of the area of ​​second heat sink portion 218. Alternatively, first heat sink portion 216 may be larger than second heat sink portion 218.

[0117] The second heat sink portion 218 may also have an area that is at least 5% of the area of ​​the first heat sink portion 216 .

[0118] The volume of heat sink material can be defined to provide a desired level of heat dissipation through each heat sink 206 while maintaining sufficient energy resolution within the central absorber portion 205. The total volume of the heat sinks 206a-206d is approximately 2 μm 3 ~about 30μm 3For example, the total volume of the heat sinks 206a-206d can be in the range of about 5 μm 3 ~about 20μm 3 In some examples, the total volume of the heat sinks 206a-206d may be in the range of about 5 μm 3 ~about 15μm 3 Further optionally, the total volume of the heat sinks 206a-206d may be in the range of about 8 μm 3 ~about 12μm 3 may be in the range of

[0119] The volume of the heat sink 206 may also vary depending on the size of the central absorber portion 205. As the size of the central absorber portion 205 is increased, the heat capacity of the absorber 202 increases, and therefore the time required to dissipate energy from incident photons also increases. Increasing the volume of the heat sink 206 can compensate for the increased heat capacity of the absorber 202. For example, for a central absorber portion 205 that is about 20 μm by about 20 μm, the total volume of the heat sink 206 may be about 8 μm. 3 ~about 12μm 3 Optionally, the total volume of the heat sink 206 may be in the range of about 10 μm 3 may be.

[0120] Preferably, each heat sink 206 may have the same dimensions (i.e., length 206l, width 206w, and depth / thickness), so that the volume of each individual heat sink 206 may be the same. For example, each heat sink 206 may have a volume of about 2.5 μm. 3 10 μm for TES200 3 may result in a total volume of

[0121] Alternatively, the heat sinks 206 may have different dimensions (e.g., different lengths, widths, and / or depths). Optionally, individual heat sinks 206 may be provided using different volumes of heat sink material.

[0122] As shown, the heat sink 206 can be spaced apart from the central portion 205. An offset distance 204o between the heat sink and the central portion 205 can be defined to provide a desired compromise between allowing photons to travel from the central portion 205 to the heat sink 206 without interfering with the main current flowing through the central portion 205. The offset distance can be in a range of between about 1 μm and about 4 μm. For example, an offset distance can be provided in a range of between about 1 μm and about 3 μm. In some examples, the inventors have found that an offset distance 204o of about 2.5 μm can be preferred in some applications.

[0123] The offset distance may be defined based in part on the length 205l of the central portion 205. The offset distance 204o may be defined to be within a range of about 1% to about 40% of the length 205l. For example, the offset distance 204o may be defined to be within a range of about 3% to about 21% of the length 205l. Further optionally, the offset distance 204o may be defined to be within a range of about 5% to about 15% of the first length or about 5% to about 13% of the first length.

[0124] 2, the superconducting absorber 202 includes lateral protrusions 204 extending outward from opposite sides of a central portion 205. For example, protrusions 204a and 204b extend outward from a first side of the central portion 205, and protrusions 204c and 204d extend outward from a second side of the central portion 205. Providing protrusions 204 extending from multiple sides of the central portion 205 may allow for more even heat dissipation on the absorber 202.

[0125] An even number of protrusions 204 may also facilitate more even heat dissipation (at least with respect to the central portion 205 of the even sides). For example, the protrusions 204 may be symmetrically arranged around the central portion 205 to facilitate more even heat distribution.

[0126] Alternatively, the protrusions 204 may be arranged in an asymmetrical configuration. For example, a different number of protrusions 204 may extend from either side of the central portion 205, and / or the protrusions 204 may be positioned at different locations along the longitudinal direction 230.

[0127] 2, the superconducting absorber 202 includes four lateral protrusions 204a-204d, however, alternative examples may include a fewer number of lateral protrusions (e.g., one lateral protrusion or two lateral protrusions as shown in FIG. 7A) or a greater number of lateral protrusions (e.g., six lateral protrusions as shown in FIG. 7B).

[0128] 2, the TES 200 includes four heat sinks 206a-206d. However, alternative examples may include fewer heat sinks (e.g., one heat sink or two heat sinks as shown in FIG. 7A) or more heat sinks (e.g., six heat sinks as shown in FIG. 7B). More generally, however, the number of heat sinks 206 is typically equal to the number of lateral protrusions 204.

[0129] The superconducting absorber 202 may be coupled to a pair of read leads 208a and 208b. The read leads 208 may provide an electrical connection between the absorber 202 and a detection circuit, such as the exemplary circuit 116 shown in FIG. 1 . That is, the read leads 208 may be used to integrate the TES 200 into an energy sensor system, such as the exemplary system 100. In operation, the superconducting absorber 202 may be maintained at a transition temperature at the edge of a phase transition by Joule heating induced by applying a bias current to the read leads 208.

[0130] The substrate 328 may be provided by using a bulk wafer material such as silicon or sapphire. The substrate 328 typically has a thickness ranging from about several hundred microns to about 1 mm. In operation, the substrate 328 may be maintained at a temperature significantly below the transition temperature of the superconducting absorber 202 to ensure that heat is dissipated into the substrate 328 after photon absorption. Thus, the substrate 328 may function as a photon bath, which ultimately absorbs the energy of photons incident on the absorber 202 and allows the absorber 202 to return to its operating temperature.

[0131] The superconducting absorber 202 may be provided using a low heat capacity superconducting material such as one or more of tungsten, hafnium, molybdenum, titanium, titanium nitride, bismuth, and aluminum. The absorber material may be selected to provide a weak thermal link between the electron and photon subsystems of the absorber 202. The weak thermal link may ensure that measurement of the energy of the incident radiation is completed before the absorber 202 returns to its operating temperature.

[0132] Optionally, the superconducting absorber 202 may be provided using a single layer of superconducting material. Alternatively, the superconducting absorber 202 may be provided by a bilayer including a superconducting metal and a normal conducting metal.

[0133] The heat sink 206 may be provided using a conventional conductive material. The heat sink material may be selected to provide the desired thermal conductivity and heat capacity to dissipate the energy of incident photons sufficiently quickly without affecting the resolution of the TES 200. The heat sink material may also be selected to allow the heat sink 206 to be deposited onto the protrusions 204 during the fabrication process for the TES 200. For example, gold may be used for the heat sink.

[0134] 3, the superconducting absorber 202 is disposed overlying a substrate 328. Multiple intermediate layers may be provided between the absorber 202 and the substrate 328. The thermal path between the absorber 202 and the substrate 328 may pass through the multiple intermediate layers.

[0135] The intermediate layer is typically fabricated on a layer of substrate 328. For example, the intermediate layer may be provided by a thin film layer deposited on substrate 328. The thickness of an individual intermediate film layer is typically about 2 μm or less. The total thickness of the multiple intermediate layers is typically in the range of about 1 μm to about 10 μm.

[0136] The intermediate layer can include at least one of an amorphous silicon layer, a SiO2 layer, a backside mirror layer, and a dielectric material layer. In the example shown in Figure 3, the intermediate layer includes an amorphous silicon layer 324 and multiple stacked layers 326.

[0137] The plurality of stacked layers 326 can also include one or more reflective layers. Optionally, the stacked layers 326 may include multiple reflective layers arranged to function as a distributed Bragg reflector (DBR). For example, alternating layers of silicon dioxide (SiO2) and amorphous silicon (a-Si) may be provided to operate as a DBR. The specific number and thickness values ​​of the layers can vary based on the desired reflectivity for the DBR and the optical coefficients of the selected materials. Providing multiple reflective layers arranged within the DBR can reduce the lossiness of the reflective layers.

[0138] Alternatively, the reflective layer or layers may be provided by metallic reflectors.

[0139] The multiple stacked layers 326 may also be arranged to space the substrate 328 from the absorber 202. Optionally, a specific spacer layer may be provided to ensure a desired spacing between the substrate 328 and the absorber 202. Alternatively, the spacer layer may be provided as part of one or more reflective layers.

[0140] As shown in Figure 3, the central absorber portion 205 has a receiving surface 323 positioned to receive an incident pulse of light. Optionally, one or more outer layers may be provided overlying the receiving surface 323. For example, as shown in Figure 3, a layer 322 of amorphous silicon may be provided overlying the central absorber portion 205. The three-layer structure, with amorphous silicon layers 322 and 324 overlying and stabilizing the absorber 202, may help to stabilize the absorber 202.

[0141] 3, an anti-reflective coating layer 320 may also be provided overlying the receiving surface 323 (as well as other components of the TES 200). For example, a layer of amorphous silicon and SiO2 may be used to provide the anti-reflective coating layer 320.

[0142] 4 and 5, the intermediate layer between the second portion 218 of each heat sink 206 and the substrate 328 is different from the intermediate layer between the absorber 202 and the substrate 328. That is, the amorphous silicon layer 322 is not present between the second portion 218 and the substrate 328. This may facilitate fabrication of the TES 200.

[0143] For example, the three-layer structure of the TES 200 can first be defined lithographically. The amorphous silicon top layer 322 (and part of the absorber material) can then be etched using an ion gun to define the central portion 205 and protrusions 204 of the absorber 202. An acid etching process can then remove the remaining exposed absorber material, leaving the a-Si bottom layer 324 intact.

[0144] A lift-off process can then be used to define and deposit the read material (e.g., niobium) of the read portions 208a and 208b. This process involves ion milling where the read material will be attached. This ensures that the read material is in direct contact with the absorber 202 (i.e., without the intervening portion of layer 322). The read material can then be deposited.

[0145] A similar process can be used to deposit the heat sink material, with only a first portion 216 of the heat sink material overlying the absorber 202, and a remaining second portion 218 of the heat sink material overlying the area where the a-Si bottom layer 324 was etched by the ion mill process.

[0146] Alternatively, the interlayer between second portion 218 and substrate 328 may be the same as the interlayer between absorber 202 and substrate 328. For example, a fabrication process in which a-Si layer 324 is not etched during deposition of leads 208 and heat sink 206 may be used to provide TES 200 with a consistent interlayer for second portion 218 and absorber 202.

[0147] 6, there is shown a simplified thermal model 600 of the exemplary superconducting transition edge sensor 200 shown in FIGS. 2-5. The simplified thermal model 600 illustrates how the heat sink 206 provides an additional thermal path for photons in the absorber 202 to travel to the substrate 328.

[0148] When a photon 602 is absorbed by the superconducting absorber 601 (e.g., central portion 205 of absorber 202), it generates heat in the electronic subsystem in the form of excited electrons. Thus, the superconducting absorber 601 receives a deposit of thermal energy from the electromagnetic radiation (i.e., the photons). The deposit of thermal energy from the photons includes a first set of excited electrons 601e.

[0149] This first set of excited electrons 601e then shares its energy on the sensor's electronic lattice. Within the superconducting absorber 601, the coupling 604 from the electronic subsystem 601e to the photonic subsystem 601p is weak. As a result, the absorber remains "hot" (i.e., above its operating temperature) for an extended period of time. The coupling between the absorber's electronic subsystem and the photonic subsystem of the substrate 628 can ensure that the recovery time is short enough to allow the TES to operate at high processing speeds, while also ensuring that the incident energy from the absorbed photons can be measured before the TES cools to its operating temperature.

[0150] 6, a first portion of the thermal energy from the photon 602 can be transmitted to the substrate 628 through a first thermal path. The first thermal path includes a first thermal coupling 604 and a second thermal coupling 606.

[0151] A first portion of the thermal energy is transferred to a first set of photons 601p in the superconducting absorber 601 by a first thermal coupling 604. In the example of TES 200, this first thermal coupling 604 is provided by a coupling between the electronic subsystem 601e and the photon subsystem 601p of the absorber 202.

[0152] The first set of photons may then be transmitted to photons in the substrate 628 via the second thermal coupling 606. In the example of the TES 200, this second thermal coupling 606 is provided by the thermal transmission path between the absorber 202 and the substrate 328.

[0153] The heat sink connected to the protrusion 204 provides an additional path for dissipating the thermal energy absorbed by the absorber 202. The heat sink material establishes a short circuit between the electrons 601e in the superconducting absorber 601 and the photons 603p in the heat sink material. Photon-to-photon coupling between the heat sink material, the superconducting absorber, and the substrate 628 can then occur quickly, reducing the time required to dissipate the thermal energy absorbed by the absorber 202.

[0154] 6, a second portion of the thermal energy from the photons 602 absorbed by the absorber 601 may be transferred to the substrate by a second thermal path including a third thermal coupling 608, a fourth thermal coupling 610, and a fifth thermal coupling 612. The second portion of the thermal energy may be transferred to a second set of excited electrons 603e in one or more heat sinks via the third thermal coupling 608. In the example of the TES 200, this third thermal coupling 608 is provided by a coupling between the electronic subsystem 601e of the protrusion 204 and the electronic subsystem 603e of the corresponding heat sink 206 in contact with the protrusion 204.

[0155] The second set of excited electrons 603e may then be converted to a second set of photons 603p in one or more heat sinks by a fourth thermal coupling 610. In the example of TES 200, this fourth thermal coupling 610 is provided by coupling between the electronic subsystem 603e and the photon subsystem 603p of heat sink 206. Heat sink 206 may be selected to have a stronger coupling between the electronic subsystem and the photon subsystem (compared to the weak electron-photon coupling of the superconducting absorber material).

[0156] The second set of photons 603p may then be converted into a third set of photons 601p in the superconducting absorber 601 by a fifth thermal coupling 612. In the example of the TES 200, this fifth thermal coupling 612 is provided by a coupling between the photonic subsystem 601p of the protrusion 204 and the photonic subsystem 603p of the corresponding heat sink 206 in contact with the protrusion 204.

[0157] The third set of photons may then be transmitted by the second thermal coupling 606 to the photons in the substrate 628 .

[0158] As noted above, the heat sink 206 also provides a separate thermal path to the substrate that bypasses the absorber 202. As shown in Figure 6, a third portion of the thermal energy from the photons 602 absorbed by the absorber 601 can be transmitted to the substrate by a third thermal path that includes a third thermal couple 608, a fourth thermal couple 610, and a sixth thermal couple 614.

[0159] Similar to the second thermal path, a third portion of the thermal energy may be transferred to a third set of excited electrons 603e in one or more heat sinks by a third thermal coupling 608. The third set of excited electrons may then be converted to a fourth set of photons in one or more heat sinks 603p by a fourth thermal coupling 610.

[0160] The fourth set of photons may then be transmitted to photons within substrate 628 by sixth thermal coupling 614. In the example of TES 200, this sixth thermal coupling 614 is provided by a heat sink thermal transmission path between second portion 218 of heat sink 206 and substrate 328. The heat sink thermal transmission path bypasses absorber 202 to transmit the fourth set of photons directly to substrate 328.

[0161] Although the above description provides one or more example processes or apparatus or systems, it will be understood that other processes or apparatus or systems may be within the scope of the appended claims.

[0162] It will be understood that the embodiments described in this disclosure, and the modules, routines, processes, threads, or other software components implementing the described methods / processes / frameworks, can be implemented using standard computer programming techniques and languages. This application is not limited to particular processors, computer languages, computer programming conventions, data structures, and / or other such implementation details. Those skilled in the art will recognize that the described methods / processes can be implemented as part of computer-executable code stored in volatile or non-volatile memory, as part of an application-specific integrated chip (ASIC), etc.

[0163] As will be apparent to those skilled in the art, certain adaptations and modifications of the described method / process / framework can be made and the embodiments discussed above should be considered as illustrative and not restrictive.

[0164] To the extent that any amendment, characterization, or other assertion previously made (in this patent, or any related patent application or patent, including any parent, sibling, or progeny patent) with respect to any technology, prior art, or otherwise, may be construed as a disclaimer of any subject matter supported by the present disclosure of this application, applicant hereby cancels and revokes such disclaimer. Applicant also respectfully states that any prior art previously considered in any related patent application or patent, including any parent, sibling, or progeny patent, may need to be re-referenced.

Claims

1. A substrate; a superconducting absorber having one or more lateral protrusions, an absorber thermal path thermally coupling the superconducting absorber to the substrate; one or more heat sinks; Equipped with Each of the one or more heat sinks (1) is in thermal contact with the substrate via a heat sink thermal path, and (2) a superconducting transition edge sensor (TES) overlapping a lateral protrusion of the one or more lateral protrusions.

2. The TES of claim 1 , wherein the one or more heat sinks include at least two heat sinks.

3. 3. The TES of claim 1, further comprising one or more intermediate layers, wherein the absorber thermal path between the superconducting absorber and the substrate extends through the one or more intermediate layers.

4. 4. The TES of claim 1, wherein the heat sink thermal path between each heat sink and the substrate at least partially bypasses the superconducting absorber.

5. 5. The TES of claim 1, wherein each heat sink comprises a first heat sink portion and a second heat sink portion, the first heat sink portion overlapping the corresponding lateral protrusion and the second heat sink portion overlapping only one or more intermediate layers between the superconducting absorber and the substrate.

6. 6. The TES of claim 5, wherein the superconducting absorber, the one or more lateral protrusions, and the second heat sink portion of each heat sink are in direct contact with and directly overlap at least some of the intermediate layers.

7. the superconducting absorber has a central portion; the lateral projections extend outwardly from the central portion along the sides; 7. The TES of claim 1, wherein each heat sink is spaced from the central portion by a first distance along the side.

8. A substrate; a superconducting absorber having one or more lateral protrusions, an absorber thermal path thermally coupling the superconducting absorber to the substrate; at least two heat sinks, each of the at least two heat sinks being in partial contact with the one or more lateral protrusions; A superconducting transition edge sensor (TES) comprising:

9. The TES of claim 8 , wherein each of the heat sinks is in thermal contact with the substrate via a heat sink thermal path.

10. 10. The TES of claim 8 or 9, wherein the at least two heat sinks comprise at least four heat sinks.

11. 11. The TES of claim 8, further comprising one or more intermediate layers, wherein the absorber thermal path between the superconducting absorber and the substrate extends through the one or more intermediate layers.

12. 12. The TES of claim 8, wherein the heat sink thermal path between each heat sink and the substrate at least partially bypasses the superconducting absorber.

13. 13. The TES of claim 8, wherein each heat sink comprises at least a first heat sink portion and a second heat sink portion, and for each heat sink, the first heat sink portion overlaps the corresponding lateral protrusion and the second heat sink portion overlaps only one or more intermediate layers between the superconducting absorber and the substrate.

14. 14. The TES of claim 13, wherein the superconducting absorber, the one or more lateral protrusions, and the second heat sink portion of each heat sink are in direct contact with and directly overlap at least some of the intermediate layers.

15. the superconducting absorber has a central portion; the lateral projections extend outwardly from the central portion along the sides; 15. The TES of claim 8, wherein each heat sink is spaced from the central portion by a first distance along the side.

16. A substrate; a superconducting absorber having one or more lateral protrusions, an absorber thermal path thermally coupling the superconducting absorber to the substrate; one or more heat sinks; each of the one or more heat sinks (1) in thermal contact with the substrate via a heat sink thermal path; and (2) a transfer energy sensor (TES) overlying a lateral protrusion of the one or more lateral protrusions; an inductor connected in series with the TES; a magnetometer inductively coupled to the inductor; An energy sensor system comprising:

17. The TES is A substrate; a superconducting absorber having one or more lateral protrusions, an absorber thermal path thermally coupling the superconducting absorber to the substrate; at least two heat sinks, each of the at least two heat sinks being in partial contact with the one or more lateral protrusions; Equipped with 17. The energy sensor system of claim 16, wherein each of the heat sinks is in thermal contact with the substrate via a heat sink thermal path.

18. 18. The energy sensor system of claim 16 or 17, further comprising at least one read lead coupling the TES to the inductor.

19. 19. The energy sensor system of claim 16, wherein the energy sensor is configured to measure a change in current through the TES in response to photons deposited on the TES.

20. 20. The energy sensor system of claim 19, wherein the magnetometer is configured to detect a change in current through the TES in response to photons deposited on the TES.

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