Power semiconductor element or power semiconductor module, and testing method, manufacturing method and testing device of the same

Abstract

To provide a power semiconductor element or a power semiconductor module that is able to suppress reduction in yield due to variations of characteristics of a power semiconductor element and reduction in productivity in dynamic characteristics test, and a testing method, a manufacturing method and a testing device of the power semiconductor element or power semiconductor module.SOLUTION: A testing method includes: a static characteristics testing step of performing static characteristics test of a power semiconductor element or a power semiconductor module to obtain static characteristics; a dynamic characteristics test parameter determination step of determining a dynamic characteristics test parameter including applied voltage characteristics and / or supply current characteristics used for dynamic characteristics test on the basis of the static characteristics obtained by the static characteristics testing step; and a dynamic characteristics testing step of performing a dynamic characteristics test for the power semiconductor element or the power semiconductor module by using the dynamic characteristics test parameter determined by the dynamic characteristics test parameter determination step.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a power semiconductor element or a power semiconductor module, a test method thereof, a manufacturing method thereof, and a test device thereof. [Background technology]

[0002] In recent years, the main inverters of electric vehicles have been known to use large amounts of power, for example, driving them with large currents of over 1000 A. To drive these large currents, power semiconductor elements capable of passing large currents are used.

[0003] When power semiconductor elements are actually used to drive the main inverter of an EV, there is a possibility that a short-circuit current may flow through the power semiconductor element for some reason. Therefore, it is necessary to take protective measures such as blocking the short-circuit current, but because it takes a considerable amount of time for the control system to detect the short circuit and issue a protection command to the entire system, the power semiconductor element is required to be able to withstand the application of a short-circuit current for at least that long.

[0004] For this reason, before shipping a power semiconductor device, a test is conducted to check for the presence or absence of breakdown by passing a predetermined short-circuit current through the power semiconductor device for a predetermined time that is longer than the time required for protection. As a result, only those devices that are guaranteed not to be broken are shipped.

[0005] Tests such as this short-circuit current test that measure the performance of a power semiconductor device in an operational state when it is installed in a system are called dynamic characteristic tests, while tests that measure the performance of a single power semiconductor device or a single power semiconductor module containing multiple power semiconductor devices in a steady state are called static characteristic tests.

[0006] Dynamic characteristic tests include tests to acquire characteristics such as short circuit current, switching characteristics, and recovery characteristics.

[0007] The static characteristic tests include tests to determine, for example, the gate drive threshold Vth, gate resistance, and breakdown voltage.

[0008] Furthermore, Patent Document 1 discloses an inspection device for semiconductor devices, which describes that it is possible to provide an inspection device for semiconductor devices that can accurately inspect the semiconductor device being inspected without damaging it by making the inspection electronic circuit into a single chip and making it smaller, and that it is possible to set the output impedance of the inspection signal supply circuit to a predetermined value. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-130427 Summary of the Invention [Problem to be solved by the invention]

[0010] Power semiconductor elements or power semiconductor modules having multiple power semiconductor elements often handle large voltages and large currents, and depending on how they are used, there is a possibility that they may break down. Therefore, it is necessary to ensure that they will not break down through dynamic characteristic tests such as the short circuit current test described above.

[0011] In dynamic characteristics testing, it is necessary to operate the power semiconductor element at a specific voltage or current, but power semiconductor elements have variations in characteristics, and even if the same external applied voltage or supply current is applied, the voltage or current during operation of the power semiconductor element may be higher or lower than the specific voltage or current.

[0012] If the voltage or current during operation of the power semiconductor device is higher than the specified voltage or current, it means that the dynamic characteristics test was conducted under conditions that are harsher than expected, and it is possible that the power semiconductor device will be destroyed by this test, or even if it is not destroyed, it may be damaged and so shipment will be suspended, which will lead to a decrease in the so-called yield.

[0013] Conversely, if the voltage or current during operation of the power semiconductor device is lower than the specified voltage or current, this means that the dynamic characteristics test was conducted under conditions that are less stringent than expected, and the specified voltage or current cannot be guaranteed, so the test may have to be repeated. When repeating the test, it may be necessary to readjust the dynamic characteristics test parameters, including the applied voltage or supply current, and repeat the test several times until the specified voltage or current is obtained. This leads to a decrease in productivity.

[0014] The present disclosure has been made to solve the above problems, and aims to provide a testing method, a manufacturing method, and a testing device for a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, which are capable of suppressing a decrease in yield and a decrease in productivity caused by variations in the characteristics of the power semiconductor elements in a dynamic characteristics test. [Means for solving the problem]

[0015] The present disclosure provides a testing method for a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, which includes performing a static characteristic test and a dynamic characteristic test, the testing method comprising: a static characteristic testing step of performing a static characteristic test of the power semiconductor element or the power semiconductor module to obtain static characteristics; a dynamic characteristic test parameter determination step of determining dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test based on the static characteristics obtained in the static characteristic testing step; and a dynamic characteristic testing step of performing a dynamic characteristic test of the power semiconductor element or the power semiconductor module using the dynamic characteristic test parameters determined in the dynamic characteristic test parameter determination step.

[0016] With this type of test method, dynamic characteristic test parameters are determined based on the acquired static characteristics and then the dynamic characteristic test is performed. Therefore, by referring to the static characteristics that are correlated with the operating conditions in the dynamic characteristic test, the dynamic characteristic test parameters can be determined based on the static characteristics so that the operating conditions in the dynamic characteristic test do not deviate from the specified conditions and vary, and the dynamic characteristic test can be performed under specified conditions, thereby suppressing a decrease in yield and productivity.

[0017] It is also preferable that the applied voltage characteristics are parameters based on the waveform of the applied voltage, and the supplied current characteristics are parameters based on the waveform of the supplied current.

[0018] In this way, if the dynamic characteristics test parameters are parameters based on the waveforms of the applied voltage and the supply current, it is easy to adjust the waveforms of the applied voltage and the supply current applied to the power semiconductor element or the power semiconductor module because these can be adjusted externally, and the dynamic characteristics test can be easily applied.

[0019] In addition, in the step of determining the dynamic characteristics test parameters, it is preferable to determine at least one of the average value, peak value, period, pulse rise slope, pulse fall slope, pulse rise time delay, pulse fall time delay, and test time of the applied voltage and / or the supplied current.

[0020] If the dynamic characteristics test parameters are determined in this way, all of them are commonly used parameters and can be reliably applied to the dynamic characteristics test.

[0021] It is also preferable to determine in advance the relationship between the static characteristics and the applied voltage and / or supply current used in the dynamic characteristics test, and in the dynamic characteristics test parameter determination step, to determine the dynamic characteristics test parameters to be used in the dynamic characteristics test by applying the previously determined relationship to the static characteristics obtained in the static characteristics test step.

[0022] By determining the dynamic characteristics test parameters in this way, the dynamic characteristics test parameters are determined based on the actually acquired static characteristics and the relationship obtained in advance, so that the dynamic characteristics test can be performed under the specified conditions with high precision.

[0023] Furthermore, it is preferable that the dynamic characteristic test carried out in the dynamic characteristic test step is a test for acquiring at least one of short circuit current, switching characteristics, and recovery characteristics.

[0024] Such dynamic characteristics testing is a common and important test for power semiconductor elements or power semiconductor modules having multiple power semiconductor elements, and is performed frequently, so it is effective in suppressing a decrease in yield and productivity in these tests.

[0025] It is also preferable that the gate drive threshold Vth, which is the static characteristic obtained in the static characteristic testing step, is used in the dynamic characteristic testing parameter determination step to determine a pulsed voltage waveform as the applied voltage characteristic based on the gate drive threshold Vth, and that the dynamic characteristic testing step uses the determined pulsed voltage waveform to perform a short circuit current test.

[0026] In this way, if a short circuit current test is performed, the gate drive threshold Vth is related to the current drive capacity of the power semiconductor element and is highly correlated with the short circuit current. Therefore, by performing the short circuit current test using a pulsed voltage waveform corresponding to the actually obtained gate drive threshold Vth, it is possible to perform the test at a predetermined short circuit current.

[0027] Furthermore, it is preferable that the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module have an input terminal, an output terminal, and a gate terminal, and the dynamic characteristics test performed in the dynamic characteristics test step is a test in which a specified voltage is applied and / or a current is supplied to the power semiconductor element or the plurality of power semiconductor elements by connecting a voltage source between the input terminal and the output terminal to apply a first voltage, and connecting a pulse signal source to the gate terminal to apply a pulsed gate voltage as a second voltage, and at least one of the first voltage and the second voltage is determined in the dynamic characteristics test parameter determination step.

[0028] In this way, by determining the first voltage and the second voltage and performing a dynamic characteristic test, it is possible to handle many dynamic characteristic tests. In particular, for those that are driven by applying a voltage to the gate terminal, there is a region in which the gate voltage value and the current value that the power semiconductor element can drive depend on each other, and the desired current value can be easily adjusted by adjusting the gate voltage.

[0029] Preferably, the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module are IGBTs, the input terminals are collectors of the IGBTs, and the output terminals are emitters of the IGBTs.

[0030] In this way, the use of IGBTs can be easily applied to many dynamic characteristic tests.

[0031] Preferably, the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module are MOSFETs, the input terminal is the drain of the MOSFET, and the output terminal is the source of the MOSFET.

[0032] In this way, the use of MOSFETs can be easily applied to many dynamic characteristic tests.

[0033] Also, it is preferable that a method for manufacturing a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements includes a step of fabricating a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, and a step of inspecting the power semiconductor element or the power semiconductor module, and that the inspection is performed using the above-mentioned test method in the inspection step.

[0034] Such a manufacturing method can suppress a decrease in yield and productivity in the inspection process, thereby improving yield and productivity throughout the entire manufacturing process from production to shipping.

[0035] The present disclosure also provides a test device for a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, the test device comprising: a connection unit for connecting the power semiconductor element or the power semiconductor module; a static characteristic acquisition unit for acquiring static characteristics of the power semiconductor element or the power semiconductor module; a dynamic characteristic test parameter determination unit for determining dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test based on the static characteristics acquired by the static characteristic acquisition unit; and a dynamic characteristic test unit for performing a dynamic characteristic test of the power semiconductor element or the power semiconductor module using the dynamic characteristic test parameters determined by the dynamic characteristic test parameter determination unit.

[0036] With such a test device, dynamic characteristic test parameters are determined based on the acquired static characteristics and then the dynamic characteristic test is performed. Therefore, by referring to the static characteristics that are correlated with the operating conditions in the dynamic characteristic test, the dynamic characteristic test parameters can be determined based on the static characteristics so that the operating conditions in the dynamic characteristic test do not deviate from the specified conditions and vary, and the dynamic characteristic test can be performed under specified conditions, thereby suppressing a decrease in yield and productivity.

[0037] Preferably, the applied voltage characteristic is a parameter based on the waveform of an applied voltage, and the supply current characteristic is a parameter based on the waveform of a supply current.

[0038] In this way, if the dynamic characteristics test parameters are parameters based on the waveforms of the applied voltage and the supply current, it is easy to adjust the waveforms of the applied voltage and the supply current applied to the power semiconductor element or the power semiconductor module because these can be adjusted externally, and they can be easily applied to dynamic characteristics tests.

[0039] It is also preferable that the dynamic characteristics test parameter determination unit determines at least one of the average value, peak value, period, pulse rising slope, pulse falling slope, pulse rising time delay, pulse falling time delay, and test time of the applied voltage and / or the supplied current.

[0040] In this way, any parameter that determines a dynamic characteristic test parameter is a commonly used parameter and can be reliably applied to a dynamic characteristic test.

[0041] Furthermore, it is preferable that the dynamic characteristics test parameter determination unit has a memory unit and a calculation unit, the memory unit stores the relationship between the static characteristics and the applied voltage and / or the supply current used in the dynamic characteristics test, and the calculation unit calculates and determines dynamic characteristics test parameters to be used in the dynamic characteristics test from the relationship stored in the memory unit and the static characteristics acquired by the static characteristics acquisition unit.

[0042] In this way, if the dynamic characteristics test parameters are determined, they are calculated and determined based on the actually acquired static characteristics and the stored relationship, so that the dynamic characteristics test can be performed under the specified conditions with high accuracy.

[0043] The dynamic characteristic test performed by the dynamic characteristic test section is preferably a test for acquiring at least one of short circuit current, switching characteristics, and recovery characteristics.

[0044] Such dynamic characteristic tests are common and important tests for power semiconductor elements or power semiconductor modules having multiple power semiconductor elements, and are performed frequently, so it would be effective to be able to suppress decreases in yield and productivity in these tests.

[0045] It is also preferable that the static characteristic acquired by the static characteristic acquisition unit is a gate drive threshold Vth, the dynamic characteristic test parameter determination unit determines a pulsed voltage waveform as the applied voltage characteristic based on the gate drive threshold Vth, and the dynamic characteristic test unit performs a short-circuit current test using the determined pulsed voltage waveform.

[0046] In this way, when a short circuit current test is performed, the gate drive threshold Vth is related to the current drive capacity of the power semiconductor element and is highly correlated with the short circuit current. Therefore, by performing the short circuit current test using a pulsed voltage waveform that corresponds to the actually obtained gate drive threshold Vth, it is possible to perform a highly accurate test at a specified short circuit current.

[0047] Furthermore, it is preferable that the connection unit connects an input terminal, an output terminal, and a gate terminal of the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module, and the dynamic characteristics testing unit has a voltage source that applies a first voltage between the input terminal and the output terminal via the connection unit, and a pulse signal source that applies a pulsed gate voltage as a second voltage to the gate terminal via the connection unit, and applies a specified voltage and / or supplies a current to the power semiconductor element or the plurality of power semiconductor elements, and the dynamic characteristics testing parameter determination unit determines at least one of the first voltage and the second voltage.

[0048] In this way, if the first voltage and the second voltage are determined and a dynamic characteristic test is performed, it will be possible to handle many dynamic characteristic tests. In particular, for those that are driven by applying a voltage to the gate terminal, there is a region in which the gate voltage value and the current value that the power semiconductor element can drive depend on each other, and by adjusting the gate voltage, it is possible to easily adjust the current value to the desired value, allowing for highly accurate testing.

[0049] The present disclosure also provides a power semiconductor element, characterized in that a static characteristic test of the power semiconductor element is performed based on the product standards of the power semiconductor element, dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test are determined based on the static characteristics obtained in the static characteristic test, a dynamic characteristic test of the power semiconductor element is performed using the dynamic characteristic test parameters, and the power semiconductor element passes the static characteristic test and the dynamic characteristic test.

[0050] Such a power semiconductor element passes the static characteristic test and the dynamic characteristic test, and can suppress a decrease in yield and a decrease in productivity.

[0051] The present disclosure also provides a power semiconductor module having a plurality of power semiconductor elements, A static characteristic test of the power semiconductor module is performed based on the product standard of the power semiconductor module, dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test are determined based on the static characteristics obtained in the static characteristic test, a dynamic characteristic test of the power semiconductor module is performed using the dynamic characteristic test parameters, and a power semiconductor module is provided which has passed the static characteristic test and the dynamic characteristic test.

[0052] Such a power semiconductor module passes the static characteristic test and the dynamic characteristic test, and can suppress a decrease in yield and a decrease in productivity. [Effects of the Invention]

[0053] As described above, with the testing method disclosed herein, dynamic characteristic test parameters are determined based on the acquired static characteristics and a dynamic characteristic test is performed. Therefore, by referring to the static characteristics that are correlated with the operating conditions in the dynamic characteristic test, the dynamic characteristic test parameters can be determined based on the static characteristics so that the operating conditions in the dynamic characteristic test do not deviate from the specified conditions and vary, and the dynamic characteristic test can be performed under specified conditions, thereby suppressing a decrease in yield and a decrease in productivity.

[0054] Furthermore, the method for manufacturing a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements according to the present disclosure can suppress a decrease in yield and a decrease in productivity in the inspection process, thereby realizing an improvement in yield and productivity throughout the entire manufacturing process from production to shipment.

[0055] Furthermore, with the test device disclosed herein, dynamic characteristic test parameters are determined based on the acquired static characteristics and then the dynamic characteristic test is performed. Therefore, by referring to the static characteristics that are correlated with the operating conditions in the dynamic characteristic test, the dynamic characteristic test parameters can be determined based on the static characteristics so that the operating conditions in the dynamic characteristic test do not deviate from the specified conditions and vary, and the dynamic characteristic test can be performed under specified conditions, thereby suppressing a decrease in yield and a decrease in productivity.

[0056] Furthermore, the power semiconductor element of the present disclosure has passed static characteristic tests and dynamic characteristic tests, and can suppress a decrease in yield and a decrease in productivity.

[0057] Furthermore, the power semiconductor module of the present disclosure has passed static characteristic tests and dynamic characteristic tests, and can suppress decreases in yield and productivity. [Brief explanation of the drawings]

[0058] [Figure 1] FIG. 1 is a schematic diagram of a testing device for a power semiconductor element according to the present disclosure. [Figure 2]FIG. 1 is a flow diagram of a test method for a power semiconductor device according to the present disclosure. [Figure 3] FIG. 2 is a circuit diagram for testing the power semiconductor element according to the first embodiment of the present disclosure. [Figure 4] FIG. 10 is a circuit diagram of a power semiconductor module used in a second embodiment of the present disclosure. [Figure 5] FIG. 10 is a circuit diagram for testing a power semiconductor module according to a second embodiment of the present disclosure, showing an example of testing an upper IGBT. [Figure 6] FIG. 10 is a circuit diagram for testing a power semiconductor module according to a second embodiment of the present disclosure, showing an example of testing a lower IGBT. DETAILED DESCRIPTION OF THE INVENTION

[0059] The present disclosure will be described in detail below, but the present disclosure is not limited thereto.

[0060] As described above, there has been a demand for a testing method, a manufacturing method, and a testing device for a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, which are capable of suppressing a decrease in yield and a decrease in productivity due to variations in the characteristics of the power semiconductor elements in a dynamic characteristics test.

[0061] As a result of extensive research into the above-mentioned issues, the inventors came to the conclusion that there may be a correlation between the variations in operating conditions in dynamic characteristic tests and the variations in static characteristics.As a specific example, they prepared multiple IGBTs that had been subjected to static characteristic tests in advance as power semiconductor elements and studied the variations in short-circuit current in dynamic characteristic tests.

[0062] For each IGBT, a voltage source was connected between the collector and emitter to apply a first voltage, and a pulse signal source was connected to the gate to apply a pulsed gate voltage as a second voltage, and the change in short-circuit current was measured when the second voltage was changed.

[0063] First, we confirmed that even if the first and second voltages are the same, the short-circuit current varies greatly depending on the IGBT, and there is a large variation due to the IGBT characteristics. We also found that by adjusting the second voltage for each IGBT, it is possible to pass the same short-circuit current through all IGBTs.

[0064] Therefore, the inventors investigated the relationship between the second voltage for passing the same short-circuit current and the static characteristics that had been acquired in advance, and found that there was a correlation between the two, which led to the completion of the present disclosure.

[0065] That is, the present disclosure is a testing method for a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, which includes performing a static characteristic test and a dynamic characteristic test, and is characterized by having: a static characteristic testing process for performing a static characteristic test of the power semiconductor element or the power semiconductor module to obtain static characteristics; a dynamic characteristic test parameter determination process for determining dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test based on the static characteristics obtained in the static characteristic testing process; and a dynamic characteristic testing process for performing a dynamic characteristic test of the power semiconductor element or the power semiconductor module using the dynamic characteristic test parameters determined in the dynamic characteristic test parameter determination process.

[0066] The present disclosure also provides a method for manufacturing a power semiconductor module having a power semiconductor element or a plurality of power semiconductor elements, the method including: a step of fabricating a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements; and a step of inspecting the power semiconductor element or the power semiconductor module, wherein the inspection is performed using the above-described test method in the inspection step.

[0067] The present disclosure also provides a test device for a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, the test device comprising: a connection unit for connecting the power semiconductor element or the power semiconductor module; a static characteristic acquisition unit for acquiring static characteristics of the power semiconductor element or the power semiconductor module; a dynamic characteristic test parameter determination unit for determining dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test based on the static characteristics acquired by the static characteristic acquisition unit; and a dynamic characteristic test unit for performing a dynamic characteristic test of the power semiconductor element or the power semiconductor module using the dynamic characteristic test parameters determined by the dynamic characteristic test parameter determination unit.

[0068] The present disclosure also provides a power semiconductor element, characterized in that a static characteristic test of the power semiconductor element is performed based on the product standards of the power semiconductor element, dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test are determined based on the static characteristics obtained in the static characteristic test, a dynamic characteristic test of the power semiconductor element is performed using the dynamic characteristic test parameters, and the power semiconductor element passes the static characteristic test and the dynamic characteristic test.

[0069] The present disclosure also provides a power semiconductor module having a plurality of power semiconductor elements, A power semiconductor module is characterized in that a static characteristic test of the power semiconductor module is performed based on the product standard of the power semiconductor module, dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test are determined based on the static characteristics obtained in the static characteristic test, a dynamic characteristic test of the power semiconductor module is performed using the dynamic characteristic test parameters, and the power semiconductor module passes the static characteristic test and the dynamic characteristic test.

[0070] The following description will be made with reference to the drawings.

[0071] Here, as shown in FIG. 1, the test apparatus 50 of the present disclosure has a connection section 52 for connecting a power semiconductor element or a power semiconductor module 51, a static characteristic acquisition section 53 for acquiring static characteristics of the power semiconductor element 51, a dynamic characteristic test parameter determination section 54 for determining dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test based on the static characteristics acquired by the static characteristic acquisition section, and a dynamic characteristic test section 55 for performing a dynamic characteristic test of the power semiconductor element 51 using the dynamic characteristic test parameters determined by the dynamic characteristic test parameter determination section.

[0072] With such a test device 50, dynamic characteristic test parameters are determined based on the acquired static characteristics and then a dynamic characteristic test is performed. Therefore, by referring to the static characteristics that are correlated with the operating conditions in the dynamic characteristic test, the dynamic characteristic test parameters can be determined based on the static characteristics so that the operating conditions in the dynamic characteristic test do not deviate from the specified conditions and vary. As a result, the dynamic characteristic test can be performed under specified conditions, thereby suppressing a decrease in yield and productivity.

[0073] Although not particularly limited, it is preferable that the applied voltage characteristic is a parameter based on the waveform of the applied voltage, and the supplied current characteristic is a parameter based on the waveform of the supplied current. For example, the second voltage may be a parameter based on the waveform of a pulsed gate voltage.

[0074] In this way, if the dynamic characteristics test parameters are parameters based on the waveforms of the applied voltage and the supply current, it is easy to adjust the waveforms of the applied voltage and the supply current applied to the power semiconductor element 51 or the power semiconductor module because these can be adjusted externally, and therefore the dynamic characteristics test can be easily applied.

[0075] Furthermore, the dynamic characteristics test parameter determination unit 54 is preferably configured to determine at least one of the average value, peak value, period, pulse rising slope, pulse falling slope, pulse rising time delay, pulse falling time delay, and test time of the applied voltage and / or the supplied current, although not particularly limited thereto. For example, a pulsed gate voltage may be applied as the second voltage, and the average value of the applied voltage may be determined in advance.

[0076] In this way, any parameter that determines a dynamic characteristic test parameter is a commonly used parameter and can be reliably applied to a dynamic characteristic test.

[0077] Furthermore, although not particularly limited, the dynamic characteristics test parameter determination unit 54 preferably includes a storage unit 56 and a calculation unit 57. The storage unit 56 stores, for example, the relationship between the static characteristics and the applied voltage and / or the supplied current used in the dynamic characteristics test, and the calculation unit 57 preferably calculates and determines the dynamic characteristics test parameters to be used in the dynamic characteristics test from, for example, the relationship stored in the storage unit 56 and the static characteristics acquired by the static characteristics acquisition unit 53. For example, the calculation unit 57 may store the relationship between the static characteristics and the applied voltage to be used in the dynamic characteristics test.

[0078] In this way, if the dynamic characteristics test parameters are determined, they are calculated and determined based on the actually acquired static characteristics and the stored relationship, so that the dynamic characteristics test can be performed under the specified conditions with high accuracy.

[0079] The dynamic characteristic test performed by the dynamic characteristic test unit 55 is not particularly limited, but is preferably a test for acquiring at least one characteristic of short circuit current, switching characteristics, and recovery characteristics. For example, it may be a test for acquiring short circuit current characteristics.

[0080] Such dynamic characteristic tests are common and important tests for the power semiconductor element 51 or a power semiconductor module having multiple power semiconductor elements, and are performed frequently, so it would be effective to be able to suppress a decrease in yield and productivity in these tests.

[0081] Furthermore, the static characteristic acquired by the static characteristic acquisition unit 53 is preferably, but not limited to, a gate drive threshold Vth, the dynamic characteristic test parameter determination unit determines a pulsed voltage waveform as the applied voltage characteristic based on the gate drive threshold Vth, and the dynamic characteristic test unit performs a short-circuit current test using the determined pulsed voltage waveform. For example, a pulsed second voltage waveform may be determined as the applied voltage characteristic based on the gate drive threshold Vth, and the dynamic characteristic test unit may perform a short-circuit current test using the determined pulsed second voltage waveform.

[0082] In this way, when a short circuit current test is performed, the gate drive threshold Vth is related to the current drive capacity of the power semiconductor element 51 and is highly correlated with the short circuit current. Therefore, by performing the short circuit current test using a pulsed voltage waveform that corresponds to the actually obtained gate drive threshold Vth, it is possible to perform a highly accurate test at a specified short circuit current.

[0083] Furthermore, although not particularly limited, the test device 50 is preferably one that applies a specified voltage and / or supplies a specified current to the power semiconductor device 51, and the dynamic characteristics test parameter determination unit 54 is preferably one that determines at least one of the first voltage and the second voltage. For example, the test device 50 may be one that applies a specified voltage to the power semiconductor device 51, where the first voltage is constant, and the dynamic characteristics test parameter determination unit determines the second voltage.

[0084] In this way, a dynamic characteristic test can be performed by determining the first voltage and the second voltage, which can accommodate many dynamic characteristic tests. In particular, for a device driven by applying a voltage to the gate terminal, there is a region where the gate voltage value and the current value that can drive the power semiconductor element 51 depend on each other, and by adjusting the gate voltage, the desired current value can be easily adjusted, allowing for highly accurate testing.

[0085] With the above configuration, the pulse applied voltage of the pulse signal source is adjusted in advance to a gate voltage corresponding to the gate drive threshold Vth of each power semiconductor element 51 so that a short-circuit current value required as the short-circuit withstand capability of the power semiconductor element 51 to be tested flows. In this state, by inputting the pulse signal voltage for the time required as the short-circuit withstand capability of the power semiconductor element 51, a predetermined short-circuit current with little variation can be applied to the power semiconductor element 51 for the specified time, and products whose basic characteristics have been confirmed thereafter can be shipped as products with guaranteed short-circuit withstand capability.

[0086] Furthermore, the power semiconductor element of the present disclosure is obtained by performing a static characteristic test on the power semiconductor element based on the product standards for the power semiconductor element, determining dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test based on the static characteristics obtained in the static characteristic test, performing a dynamic characteristic test on the power semiconductor element using the dynamic characteristic test parameters, and passing the static characteristic test and the dynamic characteristic test.

[0087] Such a power semiconductor element passes the static characteristic test and the dynamic characteristic test, and can suppress a decrease in yield and a decrease in productivity.

[0088] Furthermore, the power semiconductor module having a plurality of power semiconductor elements of the present disclosure is obtained by performing a static characteristic test on the power semiconductor module based on the product standards of the power semiconductor module, determining dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test based on the static characteristics obtained in the static characteristic test, performing a dynamic characteristic test on the power semiconductor module using the dynamic characteristic test parameters, and passing the static characteristic test and the dynamic characteristic test.

[0089] Such a power semiconductor module passes the static characteristic test and the dynamic characteristic test, and can suppress a decrease in yield and a decrease in productivity.

[0090] In the test apparatus 50 of this embodiment, the static characteristic acquisition unit 53 that acquires the static characteristics of the power semiconductor element 51 may acquire the static characteristics by including a device that performs a static characteristic test within the test apparatus 50, or may perform a static characteristic test using a device separate from the test apparatus 50 and acquire only the static characteristic data from the other device.

[0091] The testing method of the present disclosure includes a dynamic characteristic test parameter determination step of determining dynamic characteristic test parameters including applied voltage characteristics and / or supply current characteristics to be used in a dynamic characteristic test based on the static characteristics obtained in the static characteristic test step, and a dynamic characteristic test step of performing a dynamic characteristic test of a power semiconductor element using the dynamic characteristic test parameters determined in the dynamic characteristic test parameter determination step. For example, the dynamic characteristic test parameter determination step can determine parameters of an applied voltage to be used in a short circuit test. Note that the testing method of the present disclosure can test the power semiconductor element or power semiconductor module of the present disclosure using the testing apparatus of the present disclosure.

[0092] With this type of test method, dynamic characteristic test parameters are determined based on the acquired static characteristics and then the dynamic characteristic test is performed. Therefore, by referring to the static characteristics that are correlated with the operating conditions in the dynamic characteristic test, the dynamic characteristic test parameters can be determined based on the static characteristics so that the operating conditions in the dynamic characteristic test do not deviate from the specified conditions and vary, and the dynamic characteristic test can be performed under specified conditions, thereby suppressing a decrease in yield and productivity.

[0093] Although not particularly limited, it is preferable that the applied voltage characteristics be parameters based on the waveform of the applied voltage, and the supply current characteristics be parameters based on the waveform of the supply current, for example, parameters based on the waveform of a pulsed gate voltage.

[0094] In this way, if the dynamic characteristics test parameters are parameters based on the waveforms of the applied voltage and the supply current, it is easy to adjust the waveforms of the applied voltage and the supply current applied to the power semiconductor element or the power semiconductor module because these can be adjusted externally, and the dynamic characteristics test can be easily applied.

[0095] Furthermore, in the step of determining the dynamic characteristics test parameters, it is preferable to determine at least one of the average value, peak value, period, pulse rising slope, pulse falling slope, pulse rising time delay, pulse falling time delay, and test time of the applied voltage and / or the supplied current, although this is not particularly limited. For example, a pulsed gate voltage can be applied, and in particular the average value of the applied voltage can be determined in advance.

[0096] If the dynamic characteristics test parameters are determined in this way, all of them are commonly used parameters and can be reliably applied to the dynamic characteristics test.

[0097] Furthermore, although not particularly limited, it is preferable to determine in advance the relationship between the static characteristics and the applied voltage and / or supply current used in the dynamic characteristics test, and in the dynamic characteristics test parameter determination step, to determine the dynamic characteristics test parameters to be used in the dynamic characteristics test by applying the previously determined relationship to the static characteristics obtained in the static characteristics test step. For example, the relationship between the static characteristics and the applied voltage to be used in the dynamic characteristics test can be stored.

[0098] By determining the dynamic characteristics test parameters in this way, the dynamic characteristics test parameters are determined based on the actually acquired static characteristics and the relationship obtained in advance, so that the dynamic characteristics test can be performed under the specified conditions with high precision.

[0099] Furthermore, the dynamic characteristic test performed in the dynamic characteristic test step is not particularly limited, but is preferably a test for acquiring at least one of short-circuit current, switching characteristics, and recovery characteristics. For example, it may be a test for acquiring short-circuit current characteristics.

[0100] Such dynamic characteristics testing is a common and important test for power semiconductor elements or power semiconductor modules having multiple power semiconductor elements, and is performed frequently, so it is effective in suppressing a decrease in yield and productivity in these tests.

[0101] Furthermore, although not particularly limited, it is preferable that the gate drive threshold Vth, which is the static characteristic obtained in the static characteristic testing step, is used, and the dynamic characteristic testing parameter determining step determines a pulsed voltage waveform as the applied voltage characteristic based on the gate drive threshold Vth, and the dynamic characteristic testing step performs a short-circuit current test using the determined pulsed voltage waveform. For example, the pulsed voltage waveform may be determined as the applied voltage characteristic based on the gate drive threshold Vth, and the dynamic characteristic testing unit may perform a short-circuit current test using the determined pulsed voltage waveform.

[0102] In this way, if a short circuit current test is performed, the gate drive threshold Vth is related to the current drive capacity of the power semiconductor element and is highly correlated with the short circuit current. Therefore, by performing the short circuit current test using a pulsed voltage waveform corresponding to the actually obtained gate drive threshold Vth, it is possible to perform the test at a predetermined short circuit current.

[0103] Furthermore, although not particularly limited, it is preferable that the power semiconductor element or the multiple power semiconductor elements used in the power semiconductor module have an input terminal, an output terminal, and a gate terminal, and the dynamic characteristics test performed in the dynamic characteristics test process is a test in which a specified voltage is applied and / or a current is supplied to the power semiconductor element or the multiple power semiconductor elements by connecting a voltage source between the input terminal and the output terminal to apply a first voltage, and connecting a pulse signal source to the gate terminal to apply a pulsed gate voltage as a second voltage, and at least one of the first voltage and the second voltage is determined in the dynamic characteristics test parameter determination process.

[0104] In this way, by determining the first voltage and the second voltage and performing a dynamic characteristic test, it is possible to handle many dynamic characteristic tests. In particular, for those that are driven by applying a voltage to the gate terminal, there is a region in which the gate voltage value and the current value that the power semiconductor element can drive depend on each other, and the desired current value can be easily adjusted by adjusting the gate voltage.

[0105] Although not particularly limited, it is preferable that the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module are IGBTs, the input terminals are collectors of the IGBTs, and the output terminals are emitters of the IGBTs.

[0106] In this way, the use of IGBTs can be easily applied to many dynamic characteristic tests.

[0107] Although not particularly limited, it is preferable that the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module are MOSFETs, the input terminal is the drain of the MOSFET, and the output terminal is the source of the MOSFET.

[0108] In this way, the use of MOSFETs can be easily applied to many dynamic characteristic tests.

[0109] Also, a method for manufacturing a power semiconductor module having a power semiconductor element or a plurality of power semiconductor elements includes a step of fabricating a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, and a step of inspecting the power semiconductor element or the power semiconductor module, and it is preferable that the inspection is performed using the above-mentioned test method in the inspection step.

[0110] Such a manufacturing method can suppress a decrease in yield and productivity in the inspection process, thereby improving yield and productivity throughout the entire manufacturing process from production to shipping.

[0111] FIG. 2 is a flow diagram of a testing method for a power semiconductor element or a power semiconductor module according to the present disclosure. First, a static characteristic test (also called a static electrical characteristic test) is performed on a power semiconductor element or a power semiconductor module to be tested for shipment to obtain static characteristics (static characteristic test step 11). Although not particularly limited, the static characteristic measurement results (static characteristic data) of products that pass the test are stored in a testing device (step 12). Subsequently, a dynamic characteristic test, such as a test to obtain short-circuit current characteristics (also called a short-circuit test or short-circuit current test), is performed (dynamic characteristic test step 13). During this short-circuit test, a gate drive threshold value (Vth) is extracted from the static characteristic data stored in step 12 (step 14). The applied voltage for the short-circuit test is set by comparing it with an applied voltage setting table previously set in step 15 (dynamic characteristic test parameter determination step 16). A pulse signal is applied at the applied voltage (step 17), a predetermined short-circuit current is passed for a predetermined time, and the result is evaluated before the product that passed the test is shipped (step 18).

[0112] <Embodiment 1> FIG. 3 is a circuit diagram illustrating a test of a power semiconductor device according to the first embodiment of the present disclosure. The power semiconductor device 1 shown in this figure is, but is not limited to, an IGBT, and has an input terminal 2 (collector), an output terminal 3 (emitter), and a gate terminal 4 (gate) for inputting a drive control signal for the IGBT. Terminals 2, 3, and 4 are connected to connectors 6, 7, and 8 of a dynamic characteristic test section 5 of the test equipment. The dynamic characteristic test section 5 of the test equipment connects a voltage source 9 that applies a first voltage between the input terminal 2 and the output terminal 3 of the power semiconductor device 1 via connectors 6 and 7. A pulse signal source 10 that can apply a pulsed gate voltage as a second voltage is connected between the output terminal 3 and the gate terminal 4 of the power semiconductor device 1 via connectors 7 and 8. Using such a circuit, the test method of the present disclosure can be implemented.

[0113] <Embodiment 2> Power semiconductor elements are not only packaged individually, but also come in a form called a power semiconductor module in which a plurality of power semiconductor elements are mounted in the same package.

[0114] 4 is a circuit diagram of a power semiconductor module used in embodiment 2 of the present disclosure. A power semiconductor module 21 of this embodiment has two IGBTs 22 and 23. The IGBT 22 has an input terminal (collector) 24, an output terminal (emitter) 25, and a gate terminal (gate) 26, and the IGBT 23 has an input terminal (collector) 27, an output terminal (emitter) 28, and a gate terminal (gate) 29. The IGBTs are mounted in a half-bridge configuration in which the emitter 25 of the upper IGBT 22 and the collector 27 of the lower IGBT 23 are connected.

[0115] The terminals for connection to a test device include at least a high potential terminal 30 (connected to the collector 24 of the upper IGBT 22), a reference potential terminal 31 (connected to the emitter 28 of the lower IGBT 23), a module output terminal 32 (a connection node connected to the emitters 25 and collectors 27 of the two IGBTs), and gate terminals 26 and 29 of each IGBT for inputting a drive control signal. Using such a circuit, the test method of the present disclosure can be carried out on a power semiconductor module.

[0116] Note that the IGBT may be a plurality of IGBTs connected in parallel. Also, although the semiconductor module shown in Fig. 4 is equipped with one half-bridge configuration, multiple half-bridge configurations may be equipped in one power semiconductor module.

[0117] 5 and 6 are circuit diagrams for testing the power semiconductor module according to the second embodiment of the present disclosure. An example is shown in which the power semiconductor module 21 of FIG. 4 is connected to a dynamic characteristic testing section 33 of a testing device via connections 34 to 42.

[0118] 5 shows an example of connections when testing the upper IGBT 22 of the power semiconductor module 21. A voltage source 43 is connected between the high potential terminal 30 and the reference potential terminal 31 via connections 34 and 36. A pulse signal source 44 that applies a pulse signal is connected between the gate terminal 26 of the upper IGBT 22 of the half bridge and the output terminal 25 via connections 38 and 39.

[0119] The gate (gate terminal 29) of the lower IGBT 23 is connected to the emitter (output terminal 28) of the same IGBT 23 via connections 41 and 42. Furthermore, the module output terminal 32 is connected to the reference potential terminal 31 via connections 35 and 36. In this state, by inputting an ON pulse signal to the pulse signal source 44 for a time required as the short-circuit withstand capability of the power semiconductor module, a short-circuit current can be applied to the upper IGBT 22 of this power semiconductor module.

[0120] In this case, the voltage source 43 applies a first voltage between the input terminal 24 and the output terminal 25 of the upper IGBT 22 via the connections 34 and 35, and the pulse signal source 44 applies a pulsed gate voltage as a second voltage between the gate terminal 26 and the output terminal 25 via the connections 38 and 39.

[0121] Next, Fig. 6 shows a connection example when testing the lower IGBT 23 of the power semiconductor module 21. As in Fig. 5, a voltage source 43 is connected between the high potential terminal 30 and the reference potential terminal 31 via connections 34 and 36. A pulse signal source 44 that applies a pulse signal is connected between the gate terminal 29 of the lower IGBT 23 of the half bridge and the output terminal 28 via connections 41 and 42.

[0122] The gate (gate terminal 26) of the upper IGBT 22 is connected to the emitter (output terminal 25) of the same IGBT 22 via connections 38 and 39. Furthermore, the module output terminal 32 is connected to the high potential terminal 30 via connections 35 and 34. In this state, by inputting an ON pulse signal to the pulse signal source 44 for a time required as the short circuit withstand capability of the power semiconductor module, a short circuit current can be applied to the lower IGBT 23 of this power semiconductor module.

[0123] After that, the basic characteristics of each IGBT 22, 23 are checked, and products that meet the product standards and pass are shipped as products with guaranteed short-circuit resistance.

[0124] In the second embodiment, the flow for performing a short circuit test can be the same as that in the first embodiment.

[0125] In the circuits of FIGS. 3 to 6, the power semiconductor elements are illustrated as IGBTs, but the power semiconductor elements may be Si MOSFETs or SiC MOSFETs.

[0126] The present specification includes the following aspects. [1]: A test method for a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, the method comprising: performing a static characteristic test and a dynamic characteristic test; a static characteristic testing step of performing a static characteristic test on the power semiconductor element or the power semiconductor module to acquire static characteristics; a dynamic characteristic test parameter determination step of determining dynamic characteristic test parameters including applied voltage characteristics and / or supplied current characteristics to be used in a dynamic characteristic test based on the static characteristics obtained in the static characteristic test step; a dynamic characteristics test step of performing a dynamic characteristics test on the power semiconductor element or the power semiconductor module using the dynamic characteristics test parameters determined in the dynamic characteristics test parameter determination step; A test method comprising: [2]: The test method according to the above [1], wherein the applied voltage characteristic is a parameter based on the waveform of the applied voltage, and the supply current characteristic is a parameter based on the waveform of the supply current. [3]: The test method according to the above [1] or [2], characterized in that in the step of determining the dynamic characteristics test parameters, at least one of the average value, peak value, period, pulse rise slope, pulse fall slope, pulse rise time delay, pulse fall time delay, and test time of the applied voltage and / or the supplied current is determined. [4]: a relationship between the static characteristics and the applied voltage and / or the supplied current used in the dynamic characteristics test is determined in advance; The testing method according to any one of [1] to [3] above, characterized in that in the dynamic characteristics test parameter determination step, the dynamic characteristics test parameters to be used in the dynamic characteristics test are determined by applying the relationship obtained in advance to the static characteristics obtained in the static characteristics test step. [5]: The test method according to any one of [1] to [4] above, characterized in that the dynamic characteristic test carried out in the dynamic characteristic test step is a test to acquire at least one characteristic of short circuit current, switching characteristics, and recovery characteristics. [6]: Using the gate drive threshold Vth, which is the static characteristic obtained in the static characteristic test step, In the dynamic characteristic test parameter determination step, a waveform of a pulsed voltage is determined as the applied voltage characteristic based on the gate drive threshold Vth; The test method according to any one of [1] to [5] above, wherein in the dynamic characteristics test step, a short-circuit current test is carried out using the determined pulse voltage waveform. [7]: The power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module each have an input terminal, an output terminal, and a gate terminal, the dynamic characteristics test performed in the dynamic characteristics test step is a test in which a voltage source is connected between the input terminal and the output terminal to apply a first voltage, and a pulse signal source is connected to the gate terminal to apply a pulsed gate voltage as a second voltage, thereby applying a specified voltage and / or supplying a current to the power semiconductor element or the plurality of power semiconductor elements; The test method according to any one of [1] to [6] above, wherein at least one of the first voltage and the second voltage is determined in the dynamic characteristics test parameter determination step. [8]: The test method according to [7] above, characterized in that the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module are IGBTs, the input terminals are collectors of the IGBTs, and the output terminals are emitters of the IGBTs. [9]: The test method according to [7] above, characterized in that the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module are MOSFETs, the input terminal is the drain of the MOSFET, and the output terminal is the source of the MOSFET.

[10] : A method for manufacturing a power semiconductor module having a power semiconductor element or a plurality of power semiconductor elements, comprising: fabricating a power semiconductor module having a power semiconductor device or a plurality of power semiconductor devices; an inspection step of the power semiconductor element or the power semiconductor module, A manufacturing method characterized in that in the inspection step, inspection is carried out using the test method described in any one of [1] to [9] above.

[11] : A test device for a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, a connection portion for connecting a power semiconductor element or a power semiconductor module; a static characteristic acquisition unit that acquires static characteristics of the power semiconductor element or the power semiconductor module; a dynamic characteristic test parameter determination unit that determines dynamic characteristic test parameters including applied voltage characteristics and / or supplied current characteristics to be used in a dynamic characteristic test based on the static characteristics acquired by the static characteristic acquisition unit; a dynamic characteristics test unit that performs a dynamic characteristics test on the power semiconductor element or the power semiconductor module using the dynamic characteristics test parameters determined by the dynamic characteristics test parameter determination unit; A test device comprising:

[12] : The test device according to

[11] above, wherein the applied voltage characteristic is a parameter based on the waveform of an applied voltage, and the supply current characteristic is a parameter based on the waveform of a supply current.

[13] : The test device according to

[11] or

[12] above, characterized in that the dynamic characteristics test parameter determination unit determines at least one of the average value, peak value, period, pulse rise slope, pulse fall slope, pulse rise time delay, pulse fall time delay, and test time of the applied voltage and / or the supplied current.

[14] : the dynamic characteristics test parameter determination unit has a storage unit and a calculation unit, the storage unit stores a relationship between the static characteristics and the applied voltage and / or the supplied current used in the dynamic characteristics test, The test apparatus according to any one of

[11] to

[13] above, characterized in that the calculation unit calculates and determines dynamic characteristic test parameters to be used in the dynamic characteristic test from the relationship stored in the memory unit and the static characteristics acquired by the static characteristic acquisition unit.

[15] : The test device according to any one of

[11] to

[14] above, characterized in that the dynamic characteristic test performed by the dynamic characteristic test unit is a test to obtain at least one characteristic of short circuit current, switching characteristics, and recovery characteristics.

[16] : The static characteristic acquired by the static characteristic acquisition unit is a gate drive threshold voltage Vth, the dynamic characteristic test parameter determination unit determines a waveform of a pulsed voltage as the applied voltage characteristic based on the gate drive threshold Vth; The test device according to any one of

[11] to

[15] above, wherein the dynamic characteristics test unit performs a short circuit current test using the determined pulse voltage waveform.

[17] : the connection portion connects an input terminal, an output terminal, and a gate terminal of the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module, respectively; the dynamic characteristic testing unit has a voltage source that applies a first voltage between the input terminal and the output terminal via the connection unit, and a pulse signal source that applies a pulsed gate voltage as a second voltage to the gate terminal via the connection unit, and applies a specified voltage and / or supplies a specified current to the power semiconductor element or the plurality of power semiconductor elements, The test device according to any one of

[11] to

[16] above, wherein the dynamic characteristics test parameter determination unit determines at least one of the first voltage and the second voltage.

[18] : A power semiconductor element, conducting a static characteristic test of the power semiconductor element based on the product standard of the power semiconductor element; determining dynamic characteristic test parameters including applied voltage characteristics and / or supplied current characteristics to be used in a dynamic characteristic test based on the static characteristics obtained in the static characteristic test; performing a dynamic characteristic test of the power semiconductor device using the dynamic characteristic test parameters; A power semiconductor element that has passed the static characteristic test and the dynamic characteristic test.

[19] : A power semiconductor module having a plurality of power semiconductor elements, conducting a static characteristic test of the power semiconductor module based on the product standard of the power semiconductor module; determining dynamic characteristic test parameters including applied voltage characteristics and / or supplied current characteristics to be used in a dynamic characteristic test based on the static characteristics obtained in the static characteristic test; performing a dynamic characteristic test of the power semiconductor module using the dynamic characteristic test parameters; A power semiconductor module that has passed the static characteristic test and the dynamic characteristic test.

[0127] The present disclosure is not limited to the above-described embodiments. The above-described embodiments are merely examples, and any configuration that is substantially identical to the technical idea described in the claims of the present disclosure and that provides similar effects is included within the technical scope of the present disclosure. [Explanation of symbols]

[0128] 1...power semiconductor element, 2...input terminal, 3...output terminal, 4...gate terminal, 5...dynamic characteristics test section, 6, 7, 8...connection section, 9...voltage source, 10...pulse signal source, 11...static characteristics test process, 12, 14, 15, 17, 18...process, 13...dynamic characteristics test process, 16...dynamic characteristics test parameter determination process, 21...power semiconductor module, 22, 23...IGBT, 24, 27...input terminal, 25, 28...output terminal, 26, 29...gate terminal, 30...high potential terminal, 31...reference potential terminal, 32...module output terminal, 33...dynamic characteristics test section, 34-42...connection section, 43...voltage source, 44...pulse signal source, 50...test equipment, 51...power semiconductor element or power semiconductor module, 52...connection section, 53...static characteristics acquisition section, 54... Dynamic characteristics test parameter determination unit, 55... Dynamic characteristics test unit, 56... Memory unit, 57... Calculation unit.

Claims

1. A test method for a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, the method comprising: performing a static characteristic test and a dynamic characteristic test; a static characteristic testing step of performing a static characteristic test on the power semiconductor element or the power semiconductor module to acquire static characteristics; a dynamic characteristic test parameter determination step of determining dynamic characteristic test parameters including applied voltage characteristics and / or supplied current characteristics to be used in a dynamic characteristic test based on the static characteristics obtained in the static characteristic test step; a dynamic characteristics test step of performing a dynamic characteristics test on the power semiconductor element or the power semiconductor module using the dynamic characteristics test parameters determined in the dynamic characteristics test parameter determination step; A test method comprising:

2. 2. The test method according to claim 1, wherein the applied voltage characteristic is a parameter based on a waveform of an applied voltage, and the supply current characteristic is a parameter based on a waveform of a supply current.

3. 3. The test method according to claim 2, wherein the dynamic characteristics test parameter determination step determines at least one of the average value, peak value, period, pulse rise slope, pulse fall slope, pulse rise time delay, pulse fall time delay, and test time of the applied voltage and / or the supplied current.

4. a relationship between the static characteristics and the applied voltage and / or the supplied current used in the dynamic characteristics test is determined in advance; 2. The testing method according to claim 1, wherein in the dynamic characteristics test parameter determination step, the dynamic characteristics test parameters to be used in the dynamic characteristics test are determined by applying the relationship obtained in advance to the static characteristics obtained in the static characteristics test step.

5. 2. The testing method according to claim 1, wherein the dynamic characteristic test carried out in the dynamic characteristic test step is a test for acquiring at least one of short-circuit current, switching characteristics, and recovery characteristics.

6. Using the gate drive threshold Vth, which is the static characteristic obtained in the static characteristic test step, In the dynamic characteristic test parameter determination step, a waveform of a pulsed voltage is determined as the applied voltage characteristic based on the gate drive threshold Vth; 2. The testing method according to claim 1, wherein in the dynamic characteristics testing step, a short-circuit current test is performed using the determined pulse-like voltage waveform.

7. The power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module each have an input terminal, an output terminal, and a gate terminal, the dynamic characteristics test performed in the dynamic characteristics test step is a test in which a voltage source is connected between the input terminal and the output terminal to apply a first voltage, and a pulse signal source is connected to the gate terminal to apply a pulsed gate voltage as a second voltage, thereby applying a specified voltage and / or supplying a current to the power semiconductor element or the plurality of power semiconductor elements, 2. The test method according to claim 1, wherein at least one of the first voltage and the second voltage is determined in the dynamic characteristics test parameter determination step.

8. 8. The test method according to claim 7, wherein the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module are IGBTs, the input terminal is a collector of the IGBT, and the output terminal is an emitter of the IGBT.

9. 8. The test method according to claim 7, wherein the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module are MOSFETs, the input terminal is a drain of the MOSFET, and the output terminal is a source of the MOSFET.

10. A method for manufacturing a power semiconductor module having a power semiconductor element or a plurality of power semiconductor elements, comprising: fabricating a power semiconductor module having a power semiconductor device or a plurality of power semiconductor devices; an inspection step of the power semiconductor element or the power semiconductor module, A manufacturing method, characterized in that in the inspection step, inspection is carried out using the test method according to any one of claims 1 to 9.

11. A test device for a power semiconductor element or a power semiconductor module having a plurality of power semiconductor elements, a connection portion for connecting a power semiconductor element or a power semiconductor module; a static characteristic acquisition unit that acquires static characteristics of the power semiconductor element or the power semiconductor module; a dynamic characteristic test parameter determination unit that determines dynamic characteristic test parameters including applied voltage characteristics and / or supplied current characteristics to be used in a dynamic characteristic test based on the static characteristics acquired by the static characteristic acquisition unit; a dynamic characteristics test unit that performs a dynamic characteristics test on the power semiconductor element or the power semiconductor module using the dynamic characteristics test parameters determined by the dynamic characteristics test parameter determination unit; A test device comprising:

12. 12. The test apparatus according to claim 11, wherein the applied voltage characteristic is a parameter based on a waveform of an applied voltage, and the supply current characteristic is a parameter based on a waveform of a supply current.

13. 13. The test apparatus according to claim 12, wherein the dynamic characteristics test parameter determination unit determines at least one of the average value, peak value, period, pulse rise slope, pulse fall slope, pulse rise time delay, pulse fall time delay, and test time of the applied voltage and / or the supplied current.

14. the dynamic characteristics test parameter determination unit has a storage unit and a calculation unit, the storage unit stores a relationship between the static characteristics and the applied voltage and / or the supplied current used in the dynamic characteristics test, The test apparatus according to claim 11, wherein the calculation unit calculates and determines dynamic characteristics test parameters to be used in the dynamic characteristics test from the relationship stored in the memory unit and the static characteristics acquired by the static characteristics acquisition unit.

15. 12. The test apparatus according to claim 11, wherein the dynamic characteristic test performed by the dynamic characteristic test section is a test for acquiring at least one of short-circuit current, switching characteristics, and recovery characteristics.

16. The static characteristic acquired by the static characteristic acquisition unit is a gate drive threshold Vth, the dynamic characteristic test parameter determination unit determines a waveform of a pulsed voltage as the applied voltage characteristic based on the gate drive threshold Vth; 12. The test apparatus according to claim 11, wherein the dynamic characteristics test section performs a short-circuit current test using the determined pulse-like voltage waveform.

17. the connection portion connects an input terminal, an output terminal, and a gate terminal of the power semiconductor element or the plurality of power semiconductor elements used in the power semiconductor module, respectively; the dynamic characteristic testing unit has a voltage source that applies a first voltage between the input terminal and the output terminal via the connection unit, and a pulse signal source that applies a pulsed gate voltage as a second voltage to the gate terminal via the connection unit, and applies a specified voltage and / or supplies a specified current to the power semiconductor element or the plurality of power semiconductor elements, 17. The test apparatus according to claim 11, wherein the dynamic characteristics test parameter determination unit determines at least one of the first voltage and the second voltage.

18. A power semiconductor element, conducting a static characteristic test of the power semiconductor element based on the product standard of the power semiconductor element; determining dynamic characteristic test parameters including applied voltage characteristics and / or supplied current characteristics to be used in a dynamic characteristic test based on the static characteristics obtained in the static characteristic test; performing a dynamic characteristic test of the power semiconductor device using the dynamic characteristic test parameters; A power semiconductor element that has passed the static characteristic test and the dynamic characteristic test.

19. A power semiconductor module having a plurality of power semiconductor elements, conducting a static characteristic test of the power semiconductor module based on the product standard of the power semiconductor module; determining dynamic characteristic test parameters including applied voltage characteristics and / or supplied current characteristics to be used in a dynamic characteristic test based on the static characteristics obtained in the static characteristic test; performing a dynamic characteristic test of the power semiconductor module using the dynamic characteristic test parameters; A power semiconductor module that has passed the static characteristic test and the dynamic characteristic test.

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