COMPOSITION CONTAINING Ga OR Ga ALLOY AND ALUMINUM NITRIDE FILLER

Abstract

To provide a composition comprising Ga (gallium) or a Ga alloy and aluminum nitride, the composition having excellent flowability.SOLUTION: A composition comprises Ga or a Ga alloy and an aluminum nitride filler, wherein the aluminum nitride filler has an intensity ratio ((PAl-O) / (PAl-N)) of 0.3 or more between a peak (PAl-O) of an Al-O bond and a peak (PAl-N) of an Al-N bond in a spectrum obtained by X-ray photoelectron spectroscopy-X-ray excited Auger electron spectroscopy measurement.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present invention relates to a composition comprising Ga or a Ga alloy and an aluminum nitride filler. [Background technology]

[0002] Thermal interface materials are materials used to reduce the thermal resistance of the path through which heat generated by semiconductor elements is released to a heat sink or housing, and are used in a variety of forms, including sheets, gels, and greases. Known thermal interface materials include compositions in which a thermally conductive filler such as a metal filler or a ceramic filler is filled into a silicone resin or an epoxy resin.

[0003] For example, in Patent Document 1, the kinematic viscosity at 25°C is 10 to 500,000 mm 2 Patent Document 1 discloses an invention relating to a thermally conductive silicone composition containing an organopolysiloxane having a molecular weight of 1000 to 10000 / s, a thermally conductive filler having an average particle size of 0.01 to 100 μm, gallium or a gallium alloy having a melting point of -20 to 100°C, and an alkoxysilane compound having a specific structure. The thermally conductive filler described in Patent Document 1 is specifically zinc oxide, alumina, boron nitride, aluminum nitride, aluminum hydroxide, magnesium oxide, etc., and the thermally conductive filler and gallium or gallium alloy mainly play a role in improving the thermal conductivity of the silicone composition. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2023-160267 Summary of the Invention [Problem to be solved by the invention]

[0005] In recent years, electronic components have become smaller and denser, requiring better heat dissipation than ever before, and thermal interface materials with high thermal conductivity are in demand. While the thermally conductive silicone composition described in Patent Document 1 above has a certain degree of heat dissipation, it is difficult to significantly improve thermal conductivity because the matrix is ​​an organic silicone resin.

[0006] Ga or Ga alloys, also known as liquid metals, have a relatively low melting point, excellent workability, and a certain thermal conductivity. However, it is difficult to create a material with excellent heat dissipation properties using Ga or Ga alloys alone. For this reason, it is possible to incorporate a metal filler with high thermal conductivity, but in this case, the Ga or Ga alloy and the incorporated metal filler will react, which may adversely affect storage stability and fluidity.

[0007] Therefore, the present inventors investigated a composition containing Ga (gallium) or a Ga alloy and aluminum nitride, a ceramic with high thermal conductivity. However, it was found that the composition did not become paste-like when aluminum nitride was simply used, and the fluidity was reduced, resulting in poor operability and workability. In light of this background, an object of the present invention is to provide a composition containing Ga (gallium) or a Ga alloy and aluminum nitride, which has high fluidity. [Means for solving the problem]

[0008] As a result of intensive research to achieve the above object, the present inventors have found that the peak of Al-O bond (P Al-O ) and Al-N bond peak (P Al-N ) and the intensity ratio ((P Al-O ) / (P Al-N The present inventors have found that the above problems can be solved by using a composition containing an aluminum nitride filler in which the ratio of )) is at least a certain level, and have completed the present invention.

[0009] The gist of the present invention is the following [1] to [4]. [1] A composition comprising Ga or a Ga alloy and an aluminum nitride filler, wherein the aluminum nitride filler has a peak of an Al-O bond (P Al-O ) and Al-N bond peak (P Al-N ) and the intensity ratio ((P Al-O ) / (P Al-N )) is 0.3 or more. [2] The composition according to the above [1], wherein the filling rate of the aluminum nitride filler is 30 to 70% by volume. [3] An electronic component using a thermal interface material comprising the composition described in [1] or [2] above. [4] X-ray photoelectron spectroscopy - The spectrum obtained by X-ray excited Auger electron spectroscopy shows the peak of Al-O bond (P Al-O ) and Al-N bond peak (P Al-N ) and the intensity ratio ((P Al-O ) / (P Al-N )) is 0.3 or more. [Effects of the Invention]

[0010] According to the present invention, it is possible to provide a composition containing Ga (gallium) or a Ga alloy and aluminum nitride, which has high fluidity. DETAILED DESCRIPTION OF THE INVENTION

[0011] The composition of the present invention contains Ga or a Ga alloy and an aluminum nitride filler, and the aluminum nitride filler has a peak (P Al-O ) and the peak of the Al-N bond inside the particle (P Al-N ) and the intensity ratio ((P Al-O ) / (P Al-N )) is 0.3 or more. Each component constituting the composition of the present invention will be described below.

[0012] <Ga or a Ga alloy> The composition of the present invention contains Ga or a Ga alloy. Since Ga or a Ga alloy has a higher thermal conductivity than a resin, the thermal conductivity of the composition can be increased as compared with a conventional composition in which a resin is filled with a thermal conductive filler such as aluminum nitride.

[0013] The melting point of Ga or a Ga alloy is not particularly limited, but is preferably 0 to 40°C, and more preferably 5 to 38°C. When the melting point of Ga or a Ga alloy is within the above range, it is easy to melt when producing a composition with an aluminum nitride filler, so the workability is improved. Ga is metallic gallium and has a melting point of 29.8°C. Also, the melting point of a Ga alloy can be adjusted according to the composition of the Ga alloy. The melting point can be confirmed, for example, by differential scanning calorimetry (DSC). [[ID=!0]]

[0014] [[ID=!3]]Among Ga or a Ga alloy, a Ga alloy is preferred from the viewpoint of having a low melting point and enhancing the fluidity of the composition. A Ga alloy is an alloy of Ga and another metal other than Ga. The other metal is not particularly limited, and examples thereof include one or more metals selected from the group consisting of In (indium), Sn (tin), Zn (zinc), and Bi (bismuth). Examples of Ga alloys include Ga-In (gallium-indium alloy), Ga-In-Sn (gallium-indium-tin alloy), Ga-Sn-Zn (gallium-tin-zinc alloy), Ga-In-Bi-Sn (gallium-indium-bismuth-tin alloy), and the like. Among these, from the viewpoint of improving the fluidity and thermal conductivity when forming a composition with an aluminum nitride filler having the above-mentioned strength ratio (P Al-O ) / (P Al-N ) of 0.3 or more, a Ga-In-Sn (gallium-indium-tin alloy) is preferred. The proportion of Ga in the Ga alloy is not particularly limited and may be adjusted appropriately from the viewpoint of adjusting the melting point and thermal conductivity of the Ga alloy, but is, for example, 5 mass% or more, preferably 30 mass% or more, and more preferably 50 mass% or more.

[0015] The amount of Ga or Ga alloy in the composition of the present invention is not particularly limited, but is preferably 30% by volume or more, more preferably 40% by volume or more, and is preferably 70% by volume or less, more preferably 60% by volume or less.

[0016] <Aluminum nitride filler> The composition of the present invention contains an aluminum nitride filler together with Ga or a Ga alloy. Since the aluminum nitride filler is a filler with high thermal conductivity, the composition containing the aluminum nitride filler has excellent heat dissipation properties.

[0017] The aluminum nitride filler of the present invention has a peak of Al-O bond (P Al-O ) and Al-N bond peak (P Al-N ) and the intensity ratio (P Al-O ) / (P Al-N ) is 0.3 or more.

[0018] The strength ratio of the aluminum nitride filler (P Al-O ) / (P Al-N If the strength ratio (P Al-O ) / (P Al-N If the strength ratio (P) is less than 0.3, increasing the amount of aluminum nitride filler will cause the composition to lose its paste-like properties, resulting in a decrease in fluidity and poor workability. Al-O ) / (P Al-N When an aluminum nitride filler having a ρ of less than 0.3 is used, the amount of aluminum nitride filler to be blended must be reduced, which makes it difficult to increase the thermal conductivity of the composition.

[0019] In contrast, the aluminum nitride filler of the present invention has the above strength ratio (P Al-O ) / (P Al-N ) is 0.3 or more, the paste properties can be maintained even when the thermal conductivity of the composition is improved by increasing the filling amount of Ga or Ga alloy, and the paste has high fluidity and good workability. The reason for this is unclear, but it is presumed as follows: Al-O ) / (P Al-N ) is high, it means that the amount of Al-O bonds (bonds between aluminum and oxygen) on the surface of the aluminum nitride particles is large relative to the amount of Al-N bonds (bonds between aluminum and nitrogen), and specifically, it means that the oxide film layer on the surface of the aluminum nitride particles that make up the aluminum nitride filler is thick. It is believed that the presence of this oxide film layer (Al-O bonding layer) improves the interaction between the aluminum nitride filler and Ga or Ga alloy, appropriately improving the compatibility between the two and thereby enabling an increase in the loading amount of the aluminum nitride filler.

[0020] The strength ratio of the aluminum nitride filler (P Al-O ) / (P Al-N ) is preferably 0.4 or more, more preferably 0.6 or more, and even more preferably 0.8 or more, from the viewpoint of increasing the filling amount with Ga or Ga alloy. In addition, from the viewpoint of thermal conductivity, it is preferable that the thickness of the oxide film layer is set to a certain value or less. Therefore, the above strength ratio (P Al-O ) / (P Al-N ) is preferably 1.5 or less, more preferably 1.2 or less.

[0021] In the present invention, the intensity ratio (P Al-O ) / (P Al-N ) is a value determined using the peak intensity of a spectrum obtained by X-ray Auger Electron Spectroscopy (hereinafter also referred to as "XAES"), as will be described in detail in the Examples.

[0022] The peak of the Al-O bond on the particle surface by the above XAES (P Al-O ) and the peak of the Al-N bond inside the particle (P Al-N ) is not a measurement of each individual aluminum nitride particle that constitutes the aluminum nitride filler, but is measured for multiple aluminum nitride particles present in a certain area, as described in the measurement method in the Examples below, and is the average value of the aluminum nitride particles that constitute the aluminum nitride filler.

[0023] In the present invention, the intensity ratio (P Al-O ) / (P Al-N The method for producing an aluminum nitride filler having an intensity ratio (P) of 0.3 or more is not particularly limited. For example, a general aluminum nitride filler (i.e., Al-O ) / (P Al-N ) is less than 0.3) is heat-treated in an atmosphere containing oxygen, and the strength ratio (P Al-O ) / (P Al-N ) to fall within the above range.

[0024] The optimum conditions for heat treatment of the aluminum nitride filler vary slightly depending on the particle size, but the strength ratio (P Al-O ) / (P Al-N It is preferable to treat for a time period in which the intensity ratio (P Al-O ) / (P Al-N ) becomes difficult to adjust.

[0025] Furthermore, it is desirable that the materials of the equipment and jigs used in the heat treatment be metals or dense ceramics with low moisture absorption. If the material of the equipment used in the heat treatment is highly hygroscopic, such as brick, the absorbed moisture becomes an oxidation source, and the strength ratio (P Al-O) / (P Al-N ) becomes difficult to control.

[0026] A more preferred embodiment of the heat treatment is to evacuate the aluminum nitride filler to a pressure of 20 Pa or less, preferably 10 Pa or less, before heating it. This embodiment makes it possible to remove moisture and other substances present between the aluminum nitride particles, and to form a dense Al-O bonded layer on the particle surfaces by the subsequent oxidation treatment. Furthermore, it is preferable to recover the aluminum nitride filler from the heating furnace after the heat treatment when its temperature drops to 100°C or less, since this prevents the Al-O bonded layer from being altered by the action of moisture in the air.

[0027] The aluminum nitride filler in the present invention may be obtained by reduction nitridation or direct nitridation, or may consist of aluminum nitride sintered granules obtained by molding aluminum nitride fine powder obtained by reduction nitridation or direct nitridation and sintering the molded product.

[0028] In the composition of the present invention, the above-mentioned intensity ratio (P Al-O ) / (P Al-N The filling rate of the aluminum nitride filler having a ρ of 0.3 or more is preferably 30% by volume or more, more preferably 40% by volume or more, and is preferably 70% by volume or less, more preferably 60% by volume or less. The filling rate of the aluminum nitride filler means the amount (volume %) of the aluminum nitride filler in the entire composition. When the filling rate of the aluminum nitride filler is equal to or greater than these lower limit values, it becomes easy to increase the thermal conductivity of the composition, and when the filling rate of the aluminum nitride filler is equal to or less than these upper limit values, it becomes easy to maintain the paste-like properties of the composition and to improve workability.

[0029] The intensity ratio (P Al-O ) / (P Al-N The aluminum nitride filler having a strength ratio (P) of 0.3 or more can be highly filled with Ga or Ga alloy.Al-O ) / (P Al-N ) is 0.3 or more can be suitably used as an aluminum nitride filler for filling Ga or Ga alloys.

[0030] In the present invention, the intensity ratio (P Al-O ) / (P Al-N The average particle size (D50) of the aluminum nitride filler having a D50 of 0.3 or more is not particularly limited, but is preferably 0.7 to 200 μm, more preferably 10 to 150 μm, and even more preferably 15 to 100 μm. When the average particle size (D50) of the aluminum nitride filler is equal to or greater than these lower limits, the thermal conductivity of the composition is likely to be increased. When the average particle size (D50) of the aluminum nitride filler is equal to or less than these upper limits, the composition is likely to be used as a thin thermal interface material. The average particle size of the filler can be measured using a laser diffraction / scattering particle size distribution analyzer. A volume frequency distribution curve is obtained with particle size (μm) on the horizontal axis and volume frequency on the vertical axis, and the particle size (D50) at which the cumulative curve of the measured volume-based particle size distribution reaches 50% is defined as the average particle size. The aluminum nitride filler of the present invention may contain impurities, such as alkaline earth metal elements and rare earth elements, derived from raw materials or intentionally added during the synthesis process, up to a maximum of about 5% by mass. Alkaline earth metal elements and rare earth elements are particularly contained in sintering aids used in producing aluminum nitride sintered granules. When the aluminum nitride filler is in the form of sintered granules, the content of these impurities in the aluminum nitride filler can be 1 to 5% by mass, particularly 2 to 4% by mass. Furthermore, since a high content of impurities can reduce the crystallinity of aluminum nitride and reduce thermal conductivity, when the aluminum nitride filler is not in the form of sintered granules, the content of these impurities in the aluminum nitride filler is preferably 1.0% by mass or less, more preferably 0.5% by mass or less, and even more preferably 0.1% by mass or less.

[0031] As described above, in the present invention, the average particle size (D50) is 0.7 to 200 μm, and the intensity ratio (P Al-O ) / (P Al-N It is preferable to use an aluminum nitride filler having a ρ of 0.3 or more. The aluminum nitride filler has a wide range of properties, including average particle size (D50) and strength ratio (P Al-O ) / (P Al-N When multiple types of particles are used in combination, the average particle size (D50) and the intensity ratio (P Al-O ) / (P Al-N ) is the average particle size and strength ratio (P Al-O ) / (P Al-N ) and can be calculated from the blending amounts. In addition to the aluminum nitride filler, other fillers may be blended in. Examples of other fillers include aluminum oxide, silicon nitride, boron nitride, and silicon dioxide, with aluminum oxide being preferred. The average particle size (D50) of the other fillers is not particularly limited, but from the viewpoint of increasing the overall filler loading in the composition, it is preferably less than 5 μm, more preferably 3 μm or less, even more preferably 2 μm or less, and preferably 0.1 μm or more, more preferably 0.2 μm or more.

[0032] When other fillers are used, the average particle size of the other fillers is preferably smaller than that of the aluminum nitride filler, preferably 0.3 times or less, more preferably 0.1 times or less, of the average particle size of the aluminum nitride filler, and preferably 0.005 times or more, more preferably 0.01 times or more, of the average particle size of the aluminum nitride filler.

[0033] When other fillers are used, the volume ratio of the other fillers to the aluminum nitride filler in the composition (other fillers / aluminum nitride filler) is preferably 0.05 to 1, and more preferably 0.1 to 0.5, from the viewpoint of increasing the loading amount in Ga or Ga alloy.

[0034] When a mixed filler containing aluminum nitride filler and other fillers is used, the content of aluminum nitride filler in the composition is preferably 60% by volume or more, more preferably 70% by volume or more, and preferably 95% by volume or less, more preferably 90% by volume or less, based on the total volume of the filler.

[0035] In the composition of the present invention, the filling rate of all fillers is preferably 30% by volume or more, more preferably 40% by volume or more, and preferably 70% by volume or less, more preferably 60% by volume or less, from the viewpoints of improving the thermal conductivity and fluidity of the composition. The filling rate of all fillers means the filling rate of all fillers contained in the composition, and corresponds to the content (volume %) of all fillers in the entire composition.

[0036] <Other ingredients> The composition of the present invention is Ga or Ga alloy, strength ratio (P Al-O ) / (P Al-N In addition to the aluminum nitride filler having a ρ of 0.3 or more, a dispersant or the like may be contained as needed within a range that does not impair the effects of the present invention. The composition of the present invention may contain an organic substance such as a resin, but from the viewpoint of improving the thermal conductivity and fluidity of the composition, it is preferable that the amount of the organic substance is as small as possible. The amount of the organic substance in the composition of the present invention is preferably 5% by mass or less, more preferably 3% by mass or less, even more preferably 1% by mass or less, and even more preferably 0% by mass.

[0037] <Thermal conductivity> The composition of the present invention has Ga or a Ga alloy as the matrix, and therefore has superior thermal conductivity compared to conventional materials that use a resin such as a silicone resin as the matrix. The thermal conductivity of the composition of the present invention is, for example, 15 W / m K or more, and preferably 30 W / m K or more. There is no particular upper limit to the thermal conductivity, but it can be, for example, 150 W / m K or less. The thermal conductivity can be measured by the method described in the Examples.

[0038] The composition of the present invention is prepared by mixing the components, and the mixing can be performed using various mixers, etc. When preparing the composition, the composition may be heated, for example, to about 40 to 150°C, as necessary.

[0039] The composition of the present invention has high fluidity, and even when the filling rate of aluminum nitride filler is increased, the composition can maintain its paste properties and exhibit good workability. Furthermore, because the composition of the present invention has high thermal conductivity, it can be suitably used as a thermal interface material with excellent heat dissipation properties for various electronic components. [Example]

[0040] EXAMPLES The present invention will be explained in more detail below with reference to examples, but the present invention is not limited to these examples.

[0041] [Measurement method] Various physical properties in the examples and comparative examples were measured by the following methods.

[0042] (1) Average particle size The particle size was determined by the laser diffraction / scattering method using a Nikkiso Microtrack-HRA. Aluminum nitride filler was added to a solution of 90 ml of water with 5% aqueous sodium pyrophosphate, and the solution was dispersed in a homogenizer at an output of 200 mA for 3 minutes, after which measurement was performed. The average particle size was determined from the D50 obtained by the above method. Note that D50 is the particle size at which the cumulative volume of the particles is 50%.

[0043] (2) Intensity ratio (PAl-O ) / (P Al-N ) Intensity ratio (P Al-O ) / (P Al-N ) is the peak intensity (P Al-O ) and the peak intensity of 1388.5 eV (P Al-N ) ratio was calculated. In addition, the intensity ratio (P Al-O ) / (P Al-N For the measurement of ), refer to JP 2020-125228 A.

[0044] Equipment: ULVAC-PHI, Inc. X-ray photoelectron spectrometer ESCA5701ci / MC ·X-ray source: Mg-Kα radiation 14.0kV-25.7mA ·Vacuum degree: 5.0×10 -7 Pa ·Aperture diameter (analysis area): Φ800μm Photoelectron take-off angle: 45° Neutralization gun: A neutralization gun was used to mitigate the effect of sample charging on the XPS-XAES spectral shape. Charge correction: The carbon C1s peak of the measured spectrum was adjusted to 284.6 eV to correct for peak shifts due to charge. Measurement parameters: High energy resolution (Multiplex Scan) Pass Energy / eV:11.75, ΔV / V Interval:0.05,Interval Time / ms:50

[0045] (3) Compound properties The properties of the compositions (compounds) prepared in each of the Examples and Comparative Examples were evaluated according to the following criteria. ◯: Paste-like and fluid. ×: Not a paste, but uneven and partly powdery.

[0046] (4) Thermal conductivity The composition prepared in the example was applied onto a 10 mm × 10 mm silicon chip, and another 10 mm × 10 mm silicon chip was overlaid thereon to sandwich the composition between two silicon chips. A sample was obtained by crushing it with a force of 50 N for 120 seconds using a push-pull gauge (manufactured by IMADA Co., Ltd., SVH-1000N). Subsequently, the thickness of the said sample was measured with a micrometer (manufactured by Mitutoyo Corporation, highly accurate digital micrometer MDH-25MB). Thereafter, the thickness of only the composition in the sample was calculated by subtracting the thickness of the silicon chip measured in advance from the thickness of the obtained sample. Using this sample, the thermal conductivity at 25°C was measured by the laser flash method (manufactured by NETZSCH, LFA467 HyperFlash). The value obtained by subtracting the thermal conductivity of the silicon chip measured in advance was taken as the thermal conductivity of the composition.

[0047] The Ga alloys and fillers used in the examples and comparative examples are as follows.

[0048] <Ga alloy> Ga-In-Sn (gallium-indium-tin alloy) Composition (mass%) Ga / In / Sn = 62 / 25 / 13 Melting point 5°C

[0049] <Aluminum nitride filler> The following aluminum nitride fillers were used. · AlN-1: "HF-20" manufactured by Tokuyama Corporation, aluminum nitride filler with an average particle size D50 of 18 μm and an intensity ratio (P Al-O ) / (P Al-N ) of 0.34

[0050] · AlN-2: Aluminum nitride filler with an intensity ratio (P Al-O ) / (P Al-N ) of 0.57 obtained by the following method Aluminum nitride sintered granules (D50: 30 μm, intensity ratio (P Al-O ) / (P Al-N):0.15) was placed in a furnace with a muffle made of SUS310 so that the thickness was 20 mm, and after the pressure inside the furnace was set to 20 Pa, air with a dew point of -20 ° C was introduced to return to normal pressure, and heat treatment was carried out in this atmosphere at 800 ° C for 5 hours, and the strength ratio (P Al-O ) / (P Al-N An aluminum nitride filler consisting of sintered aluminum nitride granules with a porosity of 0.57 was obtained.

[0051] AlN-3: Intensity ratio (P Al-O ) / (P Al-N ) is 1.2 aluminum nitride filler Aluminum nitride sintered granules (D50: 81 μm, strength ratio (P Al-O ) / (P Al-N ):0.22) was placed in a furnace with a muffle made of SUS310 so that the thickness was 20 mm, and after the pressure inside the furnace was set to 20 Pa, air with a dew point of -20 ° C was introduced to return to normal pressure, and heat treatment was carried out in this atmosphere at 1000 ° C for 5 hours, and the strength ratio (P Al-O ) / (P Al-N An aluminum nitride filler consisting of sintered aluminum nitride granules with a porosity of 1.2 was obtained.

[0052] AlN-4: Aluminum nitride sintered granules (D50: 18 μm, strength ratio (P Al-O ) / (P Al-N ):0.24) aluminum nitride filler AlN-5: Aluminum nitride sintered granules (D50: 81 μm, strength ratio (P Al-O ) / (P Al-N ):0.22) Aluminum nitride filler

[0053] <al2o3> Aluminum oxide: "AA-1.5" (average particle size D50 = 1.5 μm) manufactured by Sumitomo Chemical Co., Ltd.

[0054] Example 1 A composition was prepared by mixing aluminum nitride filler (AlN-1) and Ga alloy (Ga-In-Sn). The compounding ratio is shown in Table 1, with 25.4 mass% of aluminum nitride filler (AlN-1) and 74.6 mass% of Ga alloy. The compound properties and thermal conductivity of the composition were evaluated, and the results are shown in Table 1.

[0055] <Examples 2 to 4, Comparative Examples 1 and 2> Compositions were prepared in the same manner as in Example 1, except that the compounding ratio was changed to that shown in Table 1. In Example 4, as shown in Table 1, a composition was prepared using a mixed filler of aluminum nitride filler (AlN-1) and aluminum oxide (Al2O3) as the filler. The compound properties and thermal conductivity of the composition were evaluated, and the results are shown in Table 1.

[0056] [Table 1]

[0057] The compositions of Examples 1 to 4 were Ga alloys and Al-O ) / (P Al-N The composition contained an aluminum nitride filler with a ρ of 0.3 or more, satisfying the requirements of the present invention, and was pasty, had high fluidity, and was also excellent in thermal conductivity. In contrast, the intensity ratio (P Al-O ) / (P Al-N The compositions of the comparative examples, which did not contain an aluminum nitride filler with a viscosity of 0.3 or more, were not paste-like and had poorer fluidity than the examples. Furthermore, because the compositions of the comparative examples were not paste-like, it was not possible to properly evaluate the thermal conductivity.

Claims

1. Ga or a Ga alloy; Contains aluminum nitride filler, The aluminum nitride filler has a peak of Al—O bond (P Ａｌ－Ｏ ) and the peak of the Al-N bond (P Ａｌ－Ｎ ) and the intensity ratio ((P Ａｌ－Ｏ ) / (P Ａｌ－Ｎ )) is 0.3 or greater.

2. The composition according to claim 1, wherein the loading of the aluminum nitride filler is 30 to 70 volume %.

3. An electronic component using a thermal interface material comprising the composition according to claim 1 or 2.

4. In the spectrum measured by X-ray photoelectron spectroscopy-X-ray excited Auger electron spectroscopy, the peak of the Al—O bond (P Ａｌ－Ｏ ) and the peak of the Al-N bond (P Ａｌ－Ｎ ) and the intensity ratio ((P Ａｌ－Ｏ ) / (P Ａｌ－Ｎ )) is 0.3 or more.

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