Reaction bonded sic-diamond (rbsic-diamond) composite with machinable feature
The formation of reaction-bonded SiC-diamond composites with machinable features addresses the challenge of tool degradation in conventional machining by using infiltration bonding to reduce diamond content in specific areas, facilitating conventional machining and lowering manufacturing costs.
Patent Information
- Application Number
- JP2024108669
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-04-18
- Filing Date
- 2024-07-05
- Publication Date
- 2025-12-25
- Estimated Expiration
- 2044-07-05
AI Technical Summary
Conventional high-performance ceramic and metal matrix composites face challenges in machining due to the degradation of machining tools, requiring expensive and complex techniques like laser-based methods, which increase manufacturing costs and complexity.
A process is developed to form reaction-bonded SiC-diamond composites with machinable features by locally reducing diamond content in areas needing machining, allowing conventional machining methods by combining SiC and diamond composites via infiltration bonding, using machinable materials in these areas.
Enables easier machining of complex features without degrading tools, reducing the need for expensive equipment and skilled labor, while maintaining the high thermal and mechanical properties of SiC-diamond composites.
Smart Images
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Abstract
Description
[Technical Field]
[0001] Aspects of the present disclosure relate to materials solutions, particularly those related to high performance ceramic and metal matrix composites. More specifically, certain implementations of the present disclosure relate to methods and systems for manufacturing and utilizing reaction-bonded SiC-diamond (RBSiC-diamond) composites with machinable features. [Background technology]
[0002]
[0002] The limitations and drawbacks of conventional high performance ceramic and metal matrix composites will become apparent to those skilled in the art through a comparison of such systems with certain aspects of the present disclosure, which are described in the remainder of this application with reference to the drawings. Summary of the Invention
[0003]
[0003] Systems and methods are provided for a reaction-bonded SiC-diamond (RBSiC-diamond) composite having machinable characteristics substantially as shown in and / or described in connection with at least one of the drawings, as more fully set forth in the claims.
[0004] These and other advantages, aspects, and novel features of the present disclosure, as well as details of illustrated embodiments thereof, will be more fully understood from the following description and drawings. [Brief explanation of the drawings]
[0005] [Figure 1]
[0005] FIG. 1 is a diagram of a mold pattern and corresponding silicone mold that may be used in forming a reaction-bonded SiC-diamond (RBSiC-diamond) composite with machinable features. [Figure 2]
[0006] 1A-1C are diagrams of example preforms and corresponding infiltrated parts that may be produced when forming reaction-bonded SiC-diamond (RBSiC-diamond) composites with machinable features. [Figure 3]
[0007] FIG. 1 is a diagram of example machinable features in a preform based on a reaction-bonded SiC-diamond (RBSiC-diamond) composite. [Figure 4]
[0008] 1 is a flowchart of an example process for forming a reaction-bonded SiC-diamond (RBSiC-diamond) composite with machinable features through the use of infiltration bonding and one continuous structure. DETAILED DESCRIPTION OF THE INVENTION
[0006]
[0009] The present disclosure relates to material solutions, particularly high-performance ceramic and metal-matrix composites, and processes for their formation. In this regard, silicon carbide (SiC)-based composites are commonly used in various industries where components or parts are expected to meet certain performance requirements (e.g., strength and / or thermal performance). Such composites may include composites in which silicon carbide (SiC) is combined with other materials, compounds, or elements that may be specifically selected to ensure that at least some of the desired performance requirements are met. For example, in some cases, silicon carbide (SiC) may be combined with diamond, thus forming a SiC-diamond composite. This may be done, for example, for use in applications requiring high thermal performance and mechanical stability. In such compositions, diamond may represent anywhere from 5% to 75% of the surface area of the final product (formed component, part, etc.).
[0007]
[0010] In some cases, the composite may be further processed, such as to further enhance performance. For example, in some cases, the composite may be reaction-bonded, thus forming a reaction-bonded ceramic. One such composite is reaction-bonded silicon carbide (RBSiC) and diamond (commonly known as Thermadite®). In this regard, Thermadite® composites (and parts made therewith) may be used in a variety of industries and / or fields, including, for example, industrial wear management and laser thermal management. The use of Thermadite® composites may be desirable because these composites exhibit properties such as low thermal expansion, high thermal conductivity, high hardness, high wear resistance, high stiffness, and chemical inertness.
[0008]
[0011] The manufacture and / or use of such high-performance composites and / or parts (e.g., Thermadite®-based), however, can present certain challenges. For example, the manufacture and / or use of such high-performance composites and / or parts can be difficult, especially when utilizing traditional machining techniques to manufacture the final surface features and / or tolerances. In such cases, more expensive processing techniques and equipment, such as laser-based machining techniques and laser-based lapping techniques, may need to be added and / or used during the manufacturing process, which can lead to increased cost and / or complexity. Furthermore, the use of such processing techniques and equipment may also require skilled operators competent in using these methods, further adding to the cost and complexity of the manufacturing process.
[0009]
[0012] Solutions according to the present disclosure provide an enhancement to the process for forming such materials and overcome some of the challenges of conventional solutions. This may be done, for example, by modifying the forming process to reduce or even eliminate the need for complex machining techniques and equipment and / or to enable conventional machining methods to be used. In particular, solutions according to the present disclosure may be configured to impede or otherwise address the ability of diamond to rapidly degrade, damage, or even destroy machining tools, to enable such use of conventional machining methods. This may be achieved, for example, by using and / or configuring the forming process so that the manufactured part is more easily machined in certain areas. For example, when a SiC-diamond composite is used, this may be done by forming the part to have locally less diamond in areas where the part needs to be machined or polished.
[0010]
[0013] In various example embodiments, the process may be used to combine silicon carbide (SiC) and diamond composites into one continuous structure with reaction-bonded SiC (RBSiC) composites via infiltration bonding to form reaction-bonded SiC-diamond based parts with machinable features. In some example embodiments, the process may be used to form the resulting reaction-bonded SiC-diamond based parts with diamond within the main structure. various In some example embodiments, the process may be configured to allow the resulting reaction-bonded SiC-diamond based part to have a loading of SiC within the machinable area (e.g., up to 75%, preferably 30-75%). various In some example embodiments, the process may be configured to allow the resulting reaction-bonded SiC-diamond based component to have a loading (e.g., at least 25%, preferably 25-75%) within the primary structure. variousIn some example embodiments, the process may be configured to allow the resulting reaction-bonded SiC-diamond based part to have diamonds of a size (e.g., 3-150 μm) within the machinable area. various The SiC may be configured to have a size (e.g., 3-90 μm). In some example embodiments, the process may be configured such that the two composites may be held together prior to bonding. In some example embodiments, a process adhesive is used to hold the two composites together prior to reaction bonding.
[0011]
[0014] In various example embodiments, an article (e.g., a particular component, part, etc.) may be formed including silicon carbide (SiC) and diamond composites (e.g., Thermadite®) and reaction-bonded SiC (RBSiC) composites, with the two composites held together via the reaction-formed SiC. The SiC (RBSiC) composite may be applied to specific areas within the article. In some embodiments, at least a portion of the RBSiC areas within the article may be threaded. In some embodiments, at least a portion of the RBSiC areas within the article may be ground and / or polished. In some embodiments, a bonding material may represent the mating surface between the SiC-diamond composite and the RBSiC composite. In some embodiments, the SiC-diamond material and the RBSiC material may be flush with one another (e.g., no bonding material is used, such as SiC-filled epoxy).
[0012]
[0015] The reaction-bonded SiC and diamond composites with machinable characteristics and the processes for forming them as described herein have the following advantages: 1) take advantage of the exceptional properties of diamond in the bulk of a part (e.g., low thermal expansion, high thermal conductivity, high hardness, high wear resistance, high stiffness, and chemical inertness); 2) (low loading SiC-Si composites can be used in applications where low loading SiC-Si composites are not as readily available as traditional ceramics, e.g., Crafting with tools2) taking advantage of no diamond loading and low SiC loading, which would otherwise require traditional machining or polishing operations; and 3) being performed prior to infiltration (thus enabling a hermetic bond and / or eliminating the need to use bond materials that may be specially formulated to facilitate bonding).
[0013]
[0016] Reaction-bonded SiC and diamond composites with machinable characteristics as described herein may be utilized in various fields and industries and / or may have a variety of applications, such as industrial applications (e.g., impact surfaces, cutting tools, etc.), semiconductor applications (e.g., dry wafer chucks, wafer chucks with internal cooling, electrostatic chucks, etc.), defense applications (e.g., graded protective clothing materials, etc.), thermal management-based applications (e.g., heat sinks for lasers, heat sinks for mirrors, high power heat sinks, etc.), and others.
[0014]
[0017] Example embodiments and related features are described in further detail in connection with FIGS.
[0018] 1 illustrates a mold pattern and corresponding silicone mold that may be used in forming reaction-bonded SiC-diamond (RBSiC-diamond) composites with machinable features. Shown in FIG. 1 are mold pattern 100 and silicone mold 110.
[0015]
[0019] The mold pattern 100 may be used to create a silicone mold 110, which in turn is used during the manufacturing process to form a preform (part). Thus, the mold pattern 100 has (roughly) the same shape as the part. In this regard, the mold pattern 100 may not be an exact match, as certain areas may be filled or otherwise modified (e.g., by adding composite material) to make them more easily machinable, as described herein, and as such, the mold pattern 100 may be configured to accommodate these changes.
[0016]
[0020] In the example mold pattern 100 illustrated in FIG. 1 , for example, the holes may be larger in the mold pattern 100 than in the part, allowing for easier addition of machinable material into the holes. As such, the mold pattern 100 may allow for the creation of a near-net-shape silicone mold. The mold pattern 100 may be made from any suitable material (e.g., stainless steel, etc.), and as such, the disclosure is not limited to any particular material. A silicone mold 110 is then created using the mold pattern 100, such as by casting a silicone-based material into the mold pattern, to create the silicone mold 110. The silicone mold 110 is then used to form a part (e.g., a preform as shown in FIG. 2 ), such as by casting a slurry into the silicone mold, as noted, which results in a near-net-shape preform.
[0017]
[0021] 2 illustrates an example preform and corresponding infiltrated part that may be produced when forming a reaction-bonded SiC-diamond (RBSiC-diamond) composite with machinable features. Shown in FIG. 2 are preform 200 and infiltrated part 210.
[0018]
[0022] In this regard, as noted, a preform may be fabricated using a silicone mold. This is described in further detail, for example, with respect to FIG. 4 (step 404). As illustrated in FIG. 2, for example, a preform 200 is fabricated using the silicon pattern 110 of FIG. 1, such as by pouring a slurry into the silicon pattern. The slurry may be a suitable SiC-diamond based slurry. The preform 200 is then processed to produce the final hard-to-machine part, the infiltrated part 210. In this regard, the top of the infiltrated part 210 is a green machined top. Machinable areas or features may be added between the preform 200 and the infiltrated part 210, as illustrated and described in further detail with respect to FIG. 3.
[0019]
[0023] 3 illustrates example machinable features within a reaction-bonded SiC-diamond (RBSiC-diamond) composite system preform. Shown in FIG. 3 is a slurry slip cast 300.
[0020]
[0024] In this regard, as noted, a slurry slip cast may be formed within the preform, thus allowing for machinable features in the area after the final thermal step. This is described in further detail with respect to FIG. 4 (steps 402-412). As illustrated in FIG. 3, a slurry slip cast 300 is formed starting from the preform 200 of FIG. 2. In this regard, as described herein, a hard composite, such as a SiC-diamond composite, may be machined and / or Crafting with tools Because of the significant challenges associated with such machining, embodiments according to the disclosure may require that more readily machinable materials (e.g., diamond-free SiC composites, etc.) be used. Crafting with tools may be placed or otherwise located in the area where the
[0021]
[0025] For example, as illustrated in FIG. 3, the readily machinable material 310 may be machined or otherwise fabricated, e.g., to add threaded holes. Crafting with tools Threaded holes 320 may be added to the slurry slip cast 300, such as in areas requiring threaded holes. In this regard, if the areas where holes are to be added were a standard material—for example, the same composite material (i.e., SiC-diamond composite) as in the main structure—it would be difficult to machine these areas to form the required holes. However, by applying an easily machinable material 310 to these areas, threaded holes 320 can be more easily machined, especially in areas where threaded holes are required. Craft with tools The readily machinable material 310 may be formed using techniques. The readily machinable material 310 may, for example, comprise a SiC composite with little or no diamond or other elements added to the primary structural SiC composite. The readily machinable material 310 may be reaction bonded to the primary structural composite.
[0022]
[0026] 4 illustrates a flowchart of an example process for forming a reaction-bonded SiC-diamond (RBSiC-diamond) composite with machinable features via infiltration bonding and using one continuous structure. Shown in FIG. 4 is a flowchart 400 including several example steps (represented as blocks 402-412) that may be performed using suitable apparatus and / or devices to form a reaction-bonded SiC-diamond (RBSiC-diamond) composite with machinable features via infiltration bonding and using one continuous structure, among other things.
[0023]
[0027] In step 402, the process may begin, such as by setting up (eg, powering on, configuring, etc.) the apparatus and / or devices needed to perform the process.
[0024]
[0028] In step 404, preform fabrication occurs. This may include multiple operations. For example, preform fabrication may include pouring into a near-net-shape silicone mold (e.g., silicone mold 110) to form a part, then curing the part, then removing the part from the silicone mold (and placing the part on a suitable surface such as graphite), then drying and binder conversion. Drying may occur under suitable conditions depending on the materials used for the part. For example, in various cases, drying may occur at a temperature slightly below the boiling temperature of water. For binder conversion, the part may be heated in a suitable environment, such as an inert atmosphere (e.g., in an N2 environment), to convert the binder to carbon.
[0025]
[0029] In step 406, a green machined preform may be formed. This may include multiple operations. For example, forming the green machined preform may include fly-cutting the casting head and machining any other necessary features before silicon infiltration is performed—i.e., before reactive bonding. In this regard, such machining is an optional operation and is performed only if needed / desired (e.g., to add features such as pockets, etc.).
[0026]
[0030] In step 408, machinable features are added. In this regard, machinable features may be added in a variety of ways, and the disclosure is not limited to any particular approach; therefore, any suitable approach may be used so long as the desired outcome—machinable features being added without degrading or otherwise adversely affecting the performance of the finished part—is achieved. For example, in some implementations, machinable features are added by slip-casting a SiC-based slurry into suitable areas within the preform—e.g., holes that will become threaded attachment points. In another example implementation, machinable features are added by adhering a green-machined SiC-based preform into pockets relative to the polishable surface.
[0027]
[0031] In step 410, reaction bonding is performed. In this regard, reaction bonding is similar to silicon infiltration. It may involve multiple operations. For example, the part (with added machinable features) is placed in a vacuum furnace under specific conditions (e.g., duration, temperature, etc.) that may depend on the part. The temperature may be, for example, greater than 1410°C. The part may then be contacted with molten Si, with the molten Si wicking and reacting with the carbon from the binder. The molten Si may also react with the outer surface of the diamond, reducing the overall Si content of the part.
[0028]
[0032] In step 412, the process may then conclude with finish machining / polishing of the part. In this regard, finish machining / polishing may be performed in a variety of ways, and the disclosure is not limited to any particular approach; therefore, any suitable approach may be used so long as the desired results are achieved. For example, in some implementations, holes are optionally threaded. In other example implementations, surfaces may be grinded, lapped, and / or polished as appropriate.
[0029]
[0033] An example method according to the present disclosure includes forming a reaction-bonded silicon carbide (SiC) based article having machinable features, the forming step including using a first composite to form a primary structure of the reaction-bonded silicon carbide (SiC) based article, the first composite including a silicon carbide (SiC) composite combined with at least one other element or compound, the at least one other element or compound being selected to ensure satisfaction of one or more performance criteria; and adding a second composite to the primary structure at one or more machinable areas to form a single, continuous structure, the second composite including a silicon carbide (SiC) composite, the one or more machinable areas being machined or Crafting with tools wherein the second composite is machined more easily than the first composite; or Crafted with tools and processing the single continuous structure so that the first composite is reaction bonded to the second composite via infiltration bonding. Thus, at least one other element or compound is added to the primary structure by machining or Crafted with tools Makes it difficult to do.
[0030]
[0034] In an example embodiment, the at least one other element or compound includes diamond, and the first composite is a SiC-diamond composite.
[0035] In an example embodiment, the reaction-bonded silicon carbide (SiC) based article has a loading of up to 75% of at least one other element or compound within the primary structure.
[0031]
[0036] In an example embodiment, the reaction-bonded silicon carbide (SiC) based article has a loading of at least one other element or compound within the primary structure of 30% to 75%.
[0032]
[0037] In an example embodiment, the reaction-bonded silicon carbide (SiC)-based article has a loading of SiC in the one or more machinable areas of at least 25%.
[0033]
[0038] In an example embodiment, the reaction-bonded silicon carbide (SiC)-based article has a loading of SiC in the one or more machinable areas of 25% to 75%.
[0034]
[0039] In an example embodiment, the reaction-bonded silicon carbide (SiC) based article comprises: various The size has at least one other element or compound.
[0040] In an example embodiment, the reaction-bonded silicon carbide (SiC) based article has a thickness ranging between 3 μm and 150 μm within the primary structure. various The size has at least one other element or compound.
[0035]
[0041] In an example embodiment, the reaction-bonded silicon carbide (SiC) based article comprises: various It has SiC of the same size.
[0042] In an example embodiment, the reaction-bonded silicon carbide (SiC) based article has a thickness ranging between 3 μm and 90 μm within the one or more machinable areas. various It has SiC of the same size.
[0036]
[0043] In an example embodiment, the method further includes holding the first composite and the second composite together prior to processing the single continuous structure.
[0037]
[0044] In an example embodiment, the method further includes using an adhesive to hold the first composite and the second composite together prior to processing the single continuous structure.
[0038]
[0045] In an example embodiment, the method further comprises, after the step of processing the single continuous structure, machining the one or more machinable areas; Crafted with tools The method further includes the step of:
[0039]
[0046] In an example embodiment, the machining step or Crafted with tools The step of threading the one or more holes includes one or more of: grinding the one or more surfaces; lapping the one or more surfaces; and polishing the one or more surfaces.
[0040]
[0047] A reaction-bonded silicon carbide (SiC) based article comprises a primary structure formed using a first composite, the first composite comprising a silicon carbide (SiC) composite combined with at least one other element or compound, the at least one other element or compound being selected to ensure that the primary structure satisfies one or more performance criteria, and one or more machinable areas formed using a second composite added to the primary structure to form a single, continuous structure, the second composite comprising a silicon carbide (SiC) composite, the one or more machinable areas being machined or Crafted with tools and wherein the second composite is machined more easily than the first composite; or Crafted with tools and one or more machinable areas that are easy to machine, and the first composite is reaction bonded to the second composite via infiltration bonding. Crafted with tools Makes it difficult to do.
[0041]
[0048] In an example embodiment, the at least one other element or compound includes diamond, and the first composite is a SiC-diamond composite.
[0049] In an example embodiment, the reaction-bonded silicon carbide (SiC)-based article further comprises a bonding material at a mating surface between the first composite and the second composite.
[0042]
[0050] In an example embodiment, the areas corresponding to the first composite and the second composite are coplanar with each other.
[0051] In an example embodiment, at least one of the one or more machinable areas is threaded.
[0043]
[0052] In an example embodiment, at least one of the one or more machinable areas is grinded, lapped, and / or polished.
[0044]
[0053] As used herein, "and / or" means any one or more of the items in the list joined by "and / or." As an example, "x and / or y" means any element of the three-element set {(x), (y), (x, y)}. In other words, "x and / or y" means "one or both of x and y." As another example, "x, y, and / or z" means any element of the seven-element set {(x), (y), (z), (x, y), (x, z), (y, z), (x, y, z)}. In other words, "x, y, and / or z" means "one or more of x, y, and z." As used herein, the term "exemplary" means serving as a non-limiting example, instance, or illustration. As used herein, the terms "for example" and "eg" start from a list of one or more non-limiting examples, instances, or illustrations.
[0045]
[0054] As used herein, “circuits” and “circuitry” refer to physical electronic components (e.g., hardware) as well as any software and / or firmware (“code”) that may comprise, be executed by, and / or otherwise be associated with hardware. As used herein, for example, a particular processor and memory (e.g., a volatile or non-volatile memory device, a general-purpose computer-readable medium, etc.) may comprise a first “circuit” when executing a first one or more lines of code, and may comprise a second “circuit” when executing a second one or more lines of code. In addition, circuits may include analog and / or digital circuit components. Such circuit components may, for example, operate on analog and / or digital signals. It should be understood that circuits may be within a single device or chip, on a single motherboard, in a single chassis, in multiple enclosures at a single geographic location, in multiple enclosures distributed across multiple geographic locations, etc. Similarly, the term "module" may refer, for example, to physical electronic components (e.g., hardware) as well as any software and / or firmware ("code") that may comprise, be executed by, and / or be otherwise associated with hardware.
[0046]
[0055] As used herein, a circuit component or module is "operable" to perform a function whenever the circuit component or module includes the necessary hardware and code, if any, to perform the function, regardless of whether performance of the function is disabled or not enabled (e.g., by a user-settable setting, a factory trim, etc.).
[0047]
[0056] Other embodiments of the invention may provide a non-transitory computer-readable medium and / or storage medium and / or a non-transitory machine-readable medium and / or storage medium storing machine code and / or a computer program having at least one code section executable by a machine and / or computer, thereby causing the machine and / or computer to perform a process as described herein.
[0048]
[0057] Various embodiments according to the present invention may also be embedded in a computer program product which includes all of the features enabling implementation of the methods described herein and which is capable of executing these methods when loaded into a computer system. A computer program in this context means any expression in any language, code or notation of a set of instructions which causes an information processing capable system to perform a particular function, either directly or after one or both of the following: a) conversion into another language, code or notation; or b) reproduction in a different material form.
[0049]
[0058] While the present method and / or system has been described with reference to certain implementations, it will be apparent to those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the present method and / or system. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the disclosure without departing from the scope of the invention. Therefore, it is not intended that the present method and / or system be limited to the particular implementations disclosed, but it is intended that the present method and / or system will include all implementations that fall within the scope of the appended claims.
Claims
1. forming a reaction-bonded silicon carbide (SiC)-based article having machinable features wherein said forming step comprises: forming a primary structure of the reaction-bonded silicon carbide (SiC) based article using a first composite material, the first composite comprises a silicon carbide (SiC) composite combined with at least one other element or compound; the at least one other element or compound is selected to ensure satisfaction of one or more performance criteria, including one or both of a strength criterion and a thermal performance criterion; Steps and adding a second composite material to the primary structure at one or more machinable areas to form a single continuous structure; the second composite comprises a silicon carbide (SiC) composite; the one or more machinable areas require machining or tooling; the second composite is easier to machine or tool than the first composite; Steps and treating the single continuous structure so that the first composite material is reaction bonded to the second composite material via infiltration bonding; A method comprising:
2. 10. The method of claim 1, wherein the at least one other element or compound comprises diamond and the first composite is a SiC-diamond composite.
3. 10. The method of claim 1, wherein the reaction-bonded silicon carbide (SiC) based article has a loading of the at least one other element or compound in the primary structure of up to 75%.
4. 4. The method of claim 3, wherein the reaction-bonded silicon carbide (SiC) based article has a loading of the at least one other element or compound within the primary structure of 30% to 75%.
5. 10. The method of claim 1, wherein the reaction-bonded silicon carbide (SiC) based article has a loading of SiC of at least 25% in the one or more machinable areas.
6. 6. The method of claim 5, wherein the reaction-bonded silicon carbide (SiC) based article has a loading of SiC in the one or more machinable areas of 25% to 75%.
7. 10. The method of claim 1, wherein the reaction-bonded silicon carbide (SiC) based article has various sizes of the at least one other element or compound within the primary structure.
8. 8. The method of claim 7, wherein the reaction-bonded silicon carbide (SiC) based article has the at least one other element or compound within the primary structure with a size ranging between 3 μm and 150 μm.
9. 10. The method of claim 1, wherein the reaction-bonded silicon carbide (SiC) based article has SiC of various sizes within the one or more machinable areas.
10. 10. The method of claim 9, wherein the reaction-bonded silicon carbide (SiC) based article has SiC of various sizes ranging between 3 μm and 90 μm in the one or more machinable areas.
11. 10. The method of claim 1, further comprising the step of holding the first composite and the second composite together prior to the step of processing the single continuous structure.
12. 12. The method of claim 11, further comprising using an adhesive to hold the first composite and the second composite together prior to the step of processing the single continuous structure.
13. 10. The method of claim 1, further comprising the step of machining or tooling the one or more machinable areas after the step of processing the single continuous structure.
14. 14. The method of claim 13, wherein the machining or tooling step includes one or more of the following steps: threading one or more holes; grinding one or more surfaces; lapping one or more surfaces; and polishing one or more surfaces.
15. 1. A reaction-bonded silicon carbide (SiC)-based article comprising: A primary structure formed using a first composite material, the first composite comprises a silicon carbide (SiC) composite combined with at least one other element or compound; the at least one other element or compound is selected to ensure satisfaction of one or more performance criteria, including one or both of a strength criterion and a thermal performance criterion; A main structure; one or more machinable areas formed using a second composite material added to the primary structure to form a single continuous structure; the second composite comprises a silicon carbide (SiC) composite; the one or more machinable areas require machining or tooling; the second composite is easier to machine or tool than the first composite; One or more machinable areas Including, the first composite is reaction bonded to the second composite via infiltration bonding; Reaction-bonded silicon carbide (SiC) based articles.
16. 16. The reaction-bonded silicon carbide (SiC) based article of claim 15, wherein the at least one other element or compound comprises diamond, and the first composite is a SiC-diamond composite.
17. 16. The reaction-bonded silicon carbide (SiC) based article of claim 15, further comprising a bonding material at a mating surface between the first composite and the second composite.
18. 16. The reaction-bonded silicon carbide (SiC) based article of claim 15, wherein areas corresponding to the first composite and the second composite are flush with one another.
19. 16. The reaction-bonded silicon carbide (SiC) based article of claim 15, wherein at least one of the one or more machinable areas is threaded.
20. 16. The reaction-bonded silicon carbide (SiC) based article of claim 15, wherein at least one of the one or more machinable areas is one or more of grinding, lapping, and polishing.