Manufacturing method for liquid crystal display panel

Abstract

To provide a display device that can deal with diversified applications and has the improved convenience.SOLUTION: A housing and a flexible display panel are provided. The housing includes an upper surface, a front surface, and a lower surface. The flexible display panel is disposed ranging from the upper surface side of the housing to the front surface and lower surface side thereof. The flexible display panel includes a first display region on the front surface side of the housing, and a second display region on the upper surface side of the housing. Each of the first display region and the second display region includes a thin film transistor and a pixel electrode layer electrically connected to the thin film transistor. A semiconductor layer of the thin film transistor includes an oxide semiconductor.SELECTED DRAWING: Figure 14

Description

[Technical Field]

[0001] The present invention relates to a liquid crystal display device and a method for manufacturing the liquid crystal display device. [Background technology]

[0002] In recent years, display devices have been used in a variety of places and for a variety of purposes, and the characteristics required for these applications have increased. Therefore, the development of display devices with functionality suited to the purpose is progressing. It is being considered.

[0003] For example, attempts have been made to form liquid crystal panels using plastic substrates in order to make them lighter. (See, for example, Non-Patent Document 1.) [Prior art documents] [Non-patent literature]

[0004] [Non-Patent Document 1] Akihiko Asano, Tomoatsu Kinoshita, 2002 SID DIGEST, p1196-1199 Summary of the Invention [Problem to be solved by the invention]

[0005] Therefore, it is possible to provide a liquid crystal display device that can be adapted to more diverse uses and has improved convenience. Another object is to produce a liquid crystal having a shape suitable for the purpose without complicating the process. One object is to manufacture a display device. [Means for solving the problem]

[0006] In the manufacturing process of a liquid crystal display device, after the electrode layer and element layer are manufactured, the shape of the liquid crystal display device is formed. Then, processing is carried out to add high functionality.

[0007] The shape of the liquid crystal display device can be freely determined by selecting the shape to be molded. Therefore, it is possible to manufacture a variety of liquid crystal display devices in shapes suited to various locations and uses. This makes it possible to provide a highly convenient liquid crystal display device.

[0008] One embodiment of the configuration of the invention disclosed in this specification is a holding member having at least a bent portion and a pair of The liquid crystal display panel has a liquid crystal material sealed between the flexible substrates and is in contact with the inside of the holding member.

[0009] Another embodiment of the configuration of the invention disclosed in this specification is a folding type folding device having a folding portion along one side and sandwiching the folding portion. A holding member having a first surface on one side and a second surface on the other side, and a pair of flexible substrates between which liquid crystal is sealed. a liquid crystal display panel inscribed in the holding member, and a first display area and a A second display area is formed on a second surface of the holding member.

[0010] Another embodiment of the configuration of the invention disclosed in this specification is a bending portion having a second bending portion on one side of the bending portion. A holding member having one surface and a second surface on the other, and a pair of flexible substrates between which a liquid crystal material is sealed and held. a liquid crystal display panel inscribed in the member, the liquid crystal display panel having a continuous first display area a first display area, a second display area, and a third display area, the first display area being located on the first surface of the holding member; The second display area faces the second surface of the holding member, and the third display area faces the bent portion. It faces.

[0011] Another embodiment of the configuration of the invention disclosed in this specification is a first substrate at least partially bent. a second substrate that is fitted to the first substrate via a spacer; and a first substrate formed by the spacer. The liquid crystal display device has a liquid crystal material sealed in the gap between the first substrate and the second substrate.

[0012] Another embodiment of the configuration of the invention disclosed in this specification is a first substrate at least partially bent. a second substrate that is fitted to the first substrate via a spacer; and a first substrate formed by the spacer. The liquid crystal material is sealed in the gap between the first substrate and the second substrate, and the bent portion is sandwiched between the first substrate and the second substrate. A first display area is formed on one surface, and a second display area is formed on the other surface. The third display area is formed on the surface between the first and second display areas. The plane formed by the first display area and the plane formed by the second area may be substantially perpendicular to each other. It's okay to have it.

[0013] Further, one embodiment of the present invention also includes a method for manufacturing a liquid crystal display panel having the above structure.

[0014] In the above-described configuration, a protective film may be formed on the liquid crystal display panel. Alternatively, the first substrate and the second substrate may be formed between the liquid crystal layer and the liquid crystal layer. Each of them may be formed.

[0015] The liquid crystal display device may also be provided with a sensor unit. A touch sensor (touch panel) or the like can be provided.

[0016] In the case of a transmissive liquid crystal display device, a backlight is provided so that the display area can be illuminated. It is preferable that the backlight has a bent portion that matches the shape of the liquid crystal display device.

[0017] The ordinal numbers such as 1st and 2nd are used for convenience and do not indicate the order of processes or stacking. Furthermore, the specific names used in this specification are not intended to identify the invention. This does not indicate

[0018] In this specification, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Generally, electro-optical devices, semiconductor circuits, and electronic devices are all semiconductor devices. [Effects of the Invention]

[0019] The shape of the liquid crystal display device can be freely determined by selecting the shape to be molded. Therefore, it is possible to manufacture a variety of liquid crystal display devices in shapes suited to various locations and uses. This makes it possible to provide a highly convenient liquid crystal display device. [Brief explanation of the drawings]

[0020] [Figure 1] 1A to 1C illustrate a method for manufacturing a liquid crystal display device. [Figure 2] 1A to 1C illustrate a method for manufacturing a liquid crystal display device. [Figure 3] 1A to 1C illustrate a method for manufacturing a liquid crystal display device. [Figure 4] 1A to 1C illustrate a method for manufacturing a liquid crystal display device. [Figure 5] 1A to 1C illustrate a method for manufacturing a liquid crystal display device. [Figure 6] 1A to 1C illustrate a method for manufacturing a liquid crystal display device. [Figure 7] 1A to 1C illustrate a method for manufacturing a liquid crystal display device. [Figure 8] 1A to 1C illustrate a method for manufacturing a liquid crystal display device. [Figure 9] 1A and 1B illustrate a liquid crystal display device. [Figure 10] FIG. 2 is a diagram illustrating a liquid crystal display module. [Figure 11] 1A to 1C illustrate a method for manufacturing a liquid crystal display device. [Figure 12] FIG. 2 is a diagram illustrating a liquid crystal display module. [Figure 13] 1A to 1C are diagrams illustrating a semiconductor element that can be applied to a liquid crystal display device. [Figure 14] 10A and 10B are diagrams illustrating an example of a mobile phone to which a liquid crystal display device is applied. [Figure 15] 10A and 10B are diagrams illustrating an example of a mobile phone to which a liquid crystal display device is applied. DETAILED DESCRIPTION OF THE INVENTION

[0021] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Those skilled in the art will recognize that various changes in form and details may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should be interpreted as being limited to the following description of the embodiments. In the configuration described below, parts that have the same parts or similar functions are not included. The same reference numerals are used in common between different drawings for corresponding parts, and repeated explanations thereof will be omitted.

[0022] (Embodiment 1) The liquid crystal display device will be described with reference to FIGS.

[0023] 1 to 3 are cross-sectional views showing a method for manufacturing a liquid crystal display device.

[0024] A liquid crystal display device comprises at least a liquid crystal layer, a pair of substrates sandwiching the liquid crystal layer, and a voltage applied to the liquid crystal layer. The device may also be provided with a semiconductor element, preferably a thin film transistor. In the case of an active matrix liquid crystal display device, a transistor is used for each pixel. A driving thin film transistor is provided.

[0025] In this embodiment, an example of an active matrix liquid crystal display device is shown, but a passive matrix liquid crystal display device may also be used. This embodiment can also be applied to a liquid crystal display device of a risk type.

[0026] In this embodiment, in the manufacturing process of a liquid crystal display device, after the electrode layer and the element layer are manufactured, The shape of the display device is formed and processing is carried out to add high functionality.

[0027] An element layer 101 is formed over a formation substrate 100 (see FIG. 1A). Next, the element layer 101 is transferred to a supporting substrate 102 (see FIG. 1B). .).

[0028] A first support 111 is used as a mold for the shape of the liquid crystal display device. The substrate 110 is provided along the curved surface of the first support 111 (see FIG. 1(C)). The substrate 110 may be fixed to the first support 111 by means of an adhesive layer or the like. This process results in the first substrate 110 being shaped to have curved and flat regions. do.

[0029] The support substrate 102 and the first support 110 are arranged so that the element layer 101 and the first substrate 110 face each other. 11 is placed on the substrate 101, and the element layer 101 is transposed in the direction of the arrow to the first substrate 110 side (FIG. 1(D) )). That is, the device layer 1 is applied to the surface opposite to the surface in contact with the support 111. 01 is displaced from the support substrate 102.

[0030] The formation substrate 100 may be appropriately selected in accordance with the manufacturing process of the element layer 101 . For example, the substrate 100 may be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or the like. A substrate, a metal substrate with an insulating layer formed on the surface, etc. can be used. A plastic substrate having sufficient heat resistance may also be used.

[0031] A spacer 121 is formed on the second substrate 120 (see FIG. 2(A)). It may be formed on another fabrication substrate and then transferred to the second substrate 120 .

[0032] The support substrate 102, the first substrate 110, and the second substrate 120 are flexible substrates (flexible substrates). However, the first substrate 110 and the second substrate 111 after being shaped and fixed are The support substrate 102, the first substrate 110, and the second substrate 120 do not need to be flexible. 20, aramid resin, polyethylene naphthalate (PEN) resin, polyether resin Polyphenylene sulfide (PES) resin, polyphenylene sulfide (PPS) resin, polyimide (P I) Resins and the like can be used.

[0033] Next, a surface on which the spacers 121 are not formed and a second support having at least a partially curved surface are The second substrate 120 and the spacer 121 are disposed so that they face the inner side of the support 123. The second support 123 is placed on the substrate 121 (see FIG. 2(B)). The second support 123 is U-shaped. The shape is also good.

[0034] The second substrate 120 is attached to the inside of the second support 123 in the direction of the arrow. A second substrate 120 having a spacer 121 is formed in a shape similar to that of the second support 123. (See FIG. 2(C)). By this process, the second substrate 120 has a curved region and a flat region. A region is formed.

[0035] A first support 111 on which the element layer 101 and the first substrate 110 are provided, and a spacer 121 and the second support 123 on which the second substrate 120 is provided, are attached to the element layer 101 and the spacer 1 21 are arranged so as to face each other (see FIG. 3(A)).

[0036] The first support 111 and the second support 123 are fitted together (combined) in the direction of the arrows. The first substrate 110 and the second substrate 120 sandwich a liquid crystal layer 125 and an element layer 101 therebetween. The substrates are bonded together using a sealant 124 (see FIG. 3(B)). It may be carried out under pressure.

[0037] The sealing material 124 is typically a visible light curable, ultraviolet curable, or thermosetting resin. It is preferable to use acrylic resin, epoxy resin, amine resin, etc. In addition, a photopolymerization initiator (typically ultraviolet light), a heat curing agent, a filler, a coloring agent, etc. can be used. It may also contain a coupling agent.

[0038] The liquid crystal layer 125 is formed by sealing a liquid crystal material in the gap. Before bonding the second substrate 120 to the first substrate 120, a dispenser method (dropping method) is used. Alternatively, the first substrate 110 and the second substrate 120 may be bonded together and then the capillary phenomenon may be used. The liquid crystal material is not particularly limited, and various In addition, when a material exhibiting a blue phase is used as the liquid crystal material, alignment can be improved. A membrane may be unnecessary.

[0039] The first support 111 and the second support 123 are removed, and the first support 111 and the second support 123 are removed. It is possible to produce a liquid crystal display panel 150 having a curved portion that reflects the shape of the support 123. (See Figure 3(C)).

[0040] Although not shown in the present embodiment, a color filter (colored layer), a black matrix, (light-shielding layer), polarizing members, phase difference members, anti-reflection members and other optical members (optical substrates) are not suitable. For example, circular polarization may be achieved by a polarizing substrate and a retardation substrate. Alternatively, a backlight, a sidelight, or the like may be used.

[0041] The first substrate 110 and the second substrate 120 are mounted on the first support 111 and the second support 123. When changing the shape by heating or light irradiation, etc. are used to fix the shape. Alternatively, the shape of the substrate may be deformed by heat treatment and the deformation may be maintained. The shape of the substrate may be fixed by cooling it while still in place.

[0042] The element layer 101 may be formed directly on the support substrate 102 or the first substrate 110. For example, The electrode layer may be formed directly on the support substrate 102 or the first substrate 110 using a printing method or the like.

[0043] The method of transferring the element layer 101 from the fabrication substrate 100 to another substrate as in this embodiment is particularly For example, the fabrication substrate 100 and the element layer 101 are A release layer may be formed between them.

[0044] The peeling layer is formed by sputtering, plasma CVD, coating, printing, etc. W, Molybdenum (Mo), Titanium (Ti), Tantalum (Ta), Niobium (Nb), Nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium Ru (Ru), Rhodium (Rh), Palladium (Pd), Osmium (Os), Iridium (Ir), silicon (Si), or an alloy material mainly composed of the element, or A layer made of a compound material containing the above element as a main component is formed as a single layer or a stacked layer. The crystalline structure of the layer may be amorphous, microcrystalline, or polycrystalline. The fabrication method includes spin coating, droplet ejection, and dispensing.

[0045] When the release layer has a single layer structure, it is preferably a tungsten layer, a molybdenum layer, or a tungsten layer. A layer containing a mixture of tungsten and molybdenum is formed. Alternatively, a layer containing tungsten oxide or molybdenum oxide is formed. a layer containing a nitride, a layer containing an oxide or oxynitride of molybdenum, or a layer containing tungsten and A layer containing an oxide or oxynitride of a mixture of molybdenum is formed. The mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

[0046] When the release layer has a laminated structure, the first layer is preferably a tungsten layer, a molybdenum layer, or a The first layer contains a mixture of tungsten and molybdenum, and the second layer contains tungsten, Oxides, nitrides, oxynitrides or nitrides of molybdenum or mixtures of tungsten and molybdenum Forms an oxide.

[0047] A layer containing tungsten and a layer containing tungsten oxide are stacked as a peeling layer. In this case, a layer containing tungsten is formed, and an insulating layer made of oxide is formed on the layer. By this, a layer containing tungsten oxide is formed at the interface between the tungsten layer and the insulating layer. Furthermore, the surface of the tungsten-containing layer may be subjected to a thermal oxidation treatment, Oxygen plasma treatment, treatment with a strong oxidizing solution such as ozone water, etc., is used to remove the tungsten acid. In addition, the plasma treatment or the heat treatment may be performed by using oxygen, nitrogen, or dioxide. The process may be carried out in an atmosphere of nitrogen alone or a mixture of the above gases with other gases. The same applies to the case of forming a layer containing tungsten nitride, oxynitride, or nitride oxide. After forming a layer containing tungsten, a silicon nitride layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon nitride layer are formed on the layer. It is preferable to form a silicon dioxide layer.

[0048] In the transfer step to another substrate, a separation layer is formed between the substrate and the element layer. a metal oxide film is provided between the element layer and the metal oxide film is weakened by crystallization, and the element layer is peeled off. a method of providing an amorphous silicon film containing hydrogen between a substrate having high heat resistance and an element layer, The amorphous silicon film is removed by irradiation or etching, thereby peeling off the element layer. A method for manufacturing a semiconductor device, comprising: forming a separation layer between a substrate and an element layer; and providing a metal oxide film between the separation layer and the element layer. The metal oxide film is weakened by crystallization, and part of the peeling layer is dissolved in a solution of NF3, BrF3, Cl After removing the metal oxide film by etching with a gas containing halogen such as F3, The method of peeling off the substrate on which the element layer is formed is to mechanically remove it or to remove it with a solution such as NF3 or BrF 3. Use a method such as etching with a gas containing halogen such as ClF3 to remove the In addition, a film containing nitrogen, oxygen, hydrogen, etc. (for example, an amorphous film containing hydrogen) can be used as the peeling layer. The peeling layer is irradiated with laser light. Nitrogen, oxygen, and hydrogen contained in the peeling layer are released as gas to promote peeling between the element layer and the substrate. The following method may also be used.

[0049] By combining the above peeling methods, the transposition process can be carried out more easily. irradiation of the laser beam, etching of the peeling layer with gas or solution, or using a sharp knife or scalpel By mechanically removing a part of the element layer, the release layer and the element layer are easily separated from each other. Alternatively, peeling can be performed by physical force (using a machine, etc.).

[0050] Alternatively, the element layer may be peeled off from the substrate by allowing a liquid to penetrate into the interface between the peeling layer and the element layer.

[0051] The shape of the liquid crystal display panel 150 is determined by selecting the shapes of the first support 111 and the second support 123. Therefore, it can be used in a variety of places and for a variety of purposes. This allows the manufacture of a variety of liquid crystal display devices in various shapes, providing highly convenient liquid crystal display devices. It can be provided.

[0052] (Embodiment 2) In this embodiment mode, an example of a manufacturing method of a liquid crystal display device having a protective film in Embodiment 1 will be described. 4 to 6. Therefore, the other steps can be performed in the same manner as in the first embodiment. Descriptions of parts that are the same as those in 1 or parts that have similar functions, and repeated steps will be omitted.

[0053] 4 to 6 are cross-sectional views showing a method for manufacturing a liquid crystal display device.

[0054] In this embodiment, in the manufacturing process of a liquid crystal display device, after the electrode layer and the element layer are manufactured, The shape of the display device is formed and processed to add high functionality. This improves the reliability of the liquid crystal display device.

[0055] An element layer 101 is formed over a formation substrate 100 (see FIG. 4A). The element layer 101 is formed to include spacers. The element layer 101 includes a thin film transistor. Then, the element layer 101 is transferred to a supporting substrate 102 (see FIG. 4B).

[0056] A first support 111 is used as a mold for the shape of the liquid crystal display device. The substrate 110 is provided along the curved surface of the first support 111. It is sufficient that it is fixed to the holder 111, and that it is attached by an adhesive layer or the like.

[0057] A protective film 103 is formed on the first substrate 110 fixed on the first support 111 (FIG. 4). (C). The first protective film 103 after being bent to fit the shape of the first support 111. The protective film 103 is formed so as to cover the substrate 110. After the protective film 103 is formed, the first substrate 110 is shaped as follows: Therefore, defects such as damage to the protective film 103 due to the shaping of the first substrate 110 can be prevented. Therefore, the dense protective film 103 can prevent moisture and other substances from the first substrate 110. It is highly effective in blocking impurities and preventing contamination of the element layer and liquid crystal layer.

[0058] The protective film 103 and the first substrate 110 are sandwiched between the support substrate 102 and the first support 111. The support substrate 102 and the first support 111 are arranged so that the element layer 101 is It is then transferred to the protective film 103 and first substrate 110 side (see FIG. 4(D)).

[0059] Next, a second substrate 120 and a second support 123 having at least a partially curved surface are placed. (See Figure 5(A)).

[0060] The second substrate 120 is attached to the inside of the second support 123 in the direction of the arrow. The second substrate 120 is formed in a shape similar to that of the second support 123 (see FIG. 5(B)). .

[0061] A protective film 122 is formed on the second substrate 120 fixed on the second support 123 (FIG. 5). (C). The second protective film 122 is bent to fit the shape of the second support 123. The protective film 122 is formed so as to cover the substrate 120. After the protective film 122 is formed, the second substrate 120 is shaped as follows: Therefore, defects such as damage to the protective film 122 due to the shape processing of the second substrate 120 can be prevented. Therefore, the dense protective film 122 can prevent moisture and other substances from the second substrate 120. It is highly effective in blocking impurities and preventing contamination of the element layer and liquid crystal layer.

[0062] The protective film 103 and the protective film 122 are formed by sputtering using an inorganic insulating material. Inorganic insulating materials include silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide. Aluminum, aluminum nitride, aluminum oxynitride, etc. can be used.

[0063] a first support 111 on which an element layer 101, a protective film 103, and a first substrate 110 are provided; The protective film 122 and the second support 123 on which the second substrate 120 is provided are attached to the element layer 101. and the protective film 122 are arranged to face each other (see FIG. 6(A)).

[0064] The first support 111 and the second support 123 are combined in the direction of the arrow, and the element layer 101 The protective film 103 and the first substrate 110, and the protective film 122 and the second substrate 120 are connected to the liquid crystal layer. 125 is sandwiched and attached with a sealing material 124 (see FIG. 6(B)).

[0065] In this embodiment mode, an example in which spacers are formed on the element layer 101 is shown. Spacers may be scattered.

[0066] The liquid crystal layer 125 is formed by dropping liquid crystal onto the first substrate 110 and the second substrate 120 before bonding them together. A dispenser method (dropping method) may be used, or a method of bonding the first substrate 110 and the second substrate 120 may be used. After combining the two, a liquid crystal is injected by using capillary action.

[0067] The first support 111 and the second support 123 are removed, and the first support 111 and the second support 123 are removed. It is possible to produce a liquid crystal display panel 150 having a curved portion that reflects the shape of the support 123. (See Figure 6(C)).

[0068] The shape of the liquid crystal display panel 150 is determined by selecting the shapes of the first support 111 and the second support 123. Therefore, it can be used in a variety of places and for a variety of purposes. This allows the manufacture of a variety of liquid crystal display devices in various shapes, providing highly convenient liquid crystal display devices. It can be provided.

[0069] Furthermore, by providing a protective film, it is possible to prevent contamination of the element layer and the liquid crystal layer with impurities. This makes it possible to improve the reliability of the liquid crystal display device.

[0070] (Embodiment 3) In this embodiment mode, a manufacturing method of a liquid crystal display device will be described in Embodiment Modes 1 and 2. Other examples are shown in Figures 7 and 8. Therefore, the other steps can be carried out in the same manner as in the first embodiment. The description of the same parts as those in the first embodiment or parts having similar functions and the repetition of steps will be omitted. .

[0071] 7 and 8 are cross-sectional views showing a method for manufacturing a liquid crystal display device.

[0072] In this embodiment mode, in a manufacturing process of a liquid crystal display device, a pair of substrates are bonded to each other with a liquid crystal layer sandwiched therebetween. After combining, the shape of the liquid crystal display device is formed and processing is carried out to add high functionality.

[0073] An element layer 101 is formed over a formation substrate 100 (see FIG. 7A). Next, the element layer 101 is transferred to a supporting substrate 102 (see FIG. 7B). .).

[0074] The element layer 101 is transferred from the support substrate 102 to the first substrate 110 (see FIG. 7C). .

[0075] A spacer 121 and a sealant 124 are formed on the second substrate 120. The spacer 121 is The semiconductor device may be formed on a fabrication substrate and then transferred to the second substrate 120 .

[0076] Next, the surface on which the spacers 121 and the sealing material 124 are formed is placed opposite the element layer 101. The second substrate 120 provided with the spacers 121 and the first substrate 110 are arranged so that (See Figure 7(D)).

[0077] The first substrate 110 and the second substrate 120 are bonded together with a liquid crystal layer 125 sandwiched therebetween (see FIG. 7(E). Through the above steps, a flexible liquid crystal display panel 155 is formed.

[0078] The structure is made up of a first substrate 110 and a second substrate 120 that face each other with a liquid crystal layer 125 sandwiched therebetween. The flexible liquid crystal display panel 155 is processed into a shape and bent to form a liquid crystal display panel having a curved portion. The shape is processed in the same manner as in the first embodiment. 11 or a support 123 may be used.

[0079] In addition, a liquid crystal display panel 155 is attached to a light-transmitting holding member. The shape of the display panel 155 may be processed and fixed.

[0080] FIG. 8(A) shows a state in which the flexible liquid crystal display panel 155 produced in FIG. 7(E) is attached to a transparent holding member 127, and the shape is processed to have a curved portion, and fixed. The member 127 has a bent portion along one side, and a first surface on one side and a second surface on the other side of the bent portion. The liquid crystal display panel 155 is provided in contact with the inside of the holding member 127, A first display area is formed on a first surface of the holding member 127, and a second display area is formed on a second surface of the holding member 127. In addition, the curve of the holding member 127 sandwiched between the first display area and the second display area can be The liquid crystal display panel 155 and the holding member 127 are made of a transparent material. The adhesive layer may be used to fix the film.

[0081] A protective film may be further formed on the liquid crystal display panel 150 shown in FIG. 7(F).

[0082] A protective film 126 is formed so as to cover the liquid crystal display panel 150 (see FIG. 8(B)).

[0083] The protective film 126 is formed on the liquid crystal display panel 150 that has been processed into a curved shape. Therefore, it is possible to prevent defects in shape such as damage to the protective film 126 due to the shaping process of the liquid crystal display panel 150. Therefore, the dense protective film 126 can prevent moisture and other impurities from entering from the outside. This provides a high effect of blocking the contamination of the liquid crystal display panel 150.

[0084] The protective film 126 can be formed by sputtering using an inorganic insulating material. The insulating materials include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, and aluminum nitride. Aluminum, aluminum oxynitride, etc. can be used.

[0085] The shape of the liquid crystal display panel 150 can be freely determined by selecting the shape of the holding member 127. Therefore, various LCD displays can be mounted in shapes suitable for various locations and uses. Therefore, a highly convenient liquid crystal display device can be provided.

[0086] Furthermore, by providing a protective film, it is possible to prevent contamination of the element layer and the liquid crystal layer with impurities. This makes it possible to improve the reliability of the liquid crystal display device.

[0087] (Fourth embodiment) In this embodiment, a liquid crystal display device having other optical components in accordance with the first to third embodiments is An example of this is shown in Fig. 9. Therefore, other steps can be performed in the same manner as in the first to third embodiments. The description of the same parts as those in Embodiments 1 to 3, or parts having similar functions, and the repetition of steps will be omitted. do.

[0088] An optical system member can be installed in the liquid crystal display device shown in any of the first to third embodiments. Components include light sources such as backlights and sidelights, optical films (polarizing films, A retardation film, an anti-reflection film, etc. can be used.

[0089] The optical film is provided on the outer side (opposite side to the liquid crystal layer) of the first film and the second film. Alternatively, it may be provided inside (between the liquid crystal layer).

[0090] Cold cathode fluorescent lamps and light emitting diodes (LEDs) can be used as the light source for the backlight. Using multiple LED light sources or multiple electroluminescence (EL) light sources, etc. A surface light source may be configured. As a surface light source, three or more types of LEDs may be used, or a white light emitting An LED light may also be used.

[0091] 9(A) and 9(B) show an example of a liquid crystal display device equipped with a backlight. The liquid crystal display panels 150 shown in FIGS. 1 to 3 are also called liquid crystal display devices. It is placed in a recess formed by the curved and flat areas of the plate 110 .

[0092] FIG. 9(A) shows a liquid crystal display panel 150 equipped with a backlight 130. The light source 30 has a cold cathode fluorescent lamp 131a. The cold cathode fluorescent lamp 131a is disposed in a housing 132. The display panel has a curved portion that fits the shape of the liquid crystal display panel.

[0093] FIG. 9B also shows a liquid crystal display panel 150 equipped with a backlight 130. The LED 131b is disposed in the housing 132. It has a curved portion that fits the shape of the liquid crystal display panel.

[0094] The backlight 130 in FIGS. 9(A) and 9(B) may include a light guide member (component). A scattering member (film), a reflective member (film), etc. may be provided. The light-transmitting portion is located in the area that transmits the light.

[0095] As shown in this embodiment, the shape of the optical member is adjusted to fit the shape of the liquid crystal display device having a curved portion. The shape is shaped and positioned to have a curved portion.

[0096] The shape of the liquid crystal display device can be freely determined by selecting the shape to be molded. Therefore, it is possible to manufacture a variety of liquid crystal display devices in shapes suited to various locations and uses. This makes it possible to provide a highly convenient liquid crystal display device.

[0097] (Embodiment 5) In this embodiment, in the first to fourth embodiments, a plurality of liquid crystal display elements are mounted on a large substrate. An example of fabricating a sub-layer (so-called multiple panel fabrication) is shown in FIG. 11. Therefore, the other embodiments are the same as those of the first to fourth embodiments. The same parts as those in the first to fourth embodiments or parts having similar functions, The explanation of the repetition of the steps will be omitted.

[0098] In the above embodiment, the element layer 101 is formed on the formation substrate 100. The element layer 101 is then transferred onto a support substrate 102 which is a flexible substrate.

[0099] Figure 11 shows a method for transferring multiple element layers from a large fabrication substrate to a support substrate. A2) (B2) (C2) are plan views, and Fig. 11(A1) (B1) (C1) are views of Fig. 11( A2), (B2), and (C2) are cross-sectional views taken along line XY.

[0100] Element layers 101a, 101b, and 101c are formed on a large fabrication substrate 180 (FIG. 11(A)). See 1)(A2). ).

[0101] The support substrate 182 is disposed opposite the element layers 101a, 101b, and 101c, and the fabrication substrate 18 The element layers 101a, 101b, and 101c are transposed from the substrate 180 to the direction of the arrow ( See Figure 11(B1)(B2).

[0102] The support substrate 182 is provided for each of the element layers 101a, 101b, and 101c. The substrate is divided into a substrate 102a, a support substrate 102b, and a support substrate 102c (see FIGS. 11(C1) and 11(C2)). The dividing means is not particularly limited as long as it can be divided physically, and may be a dicer, a slicer, or the like. The cutting may be performed using a cleaver or by irradiating with laser light.

[0103] For each panel, an element layer 102 (102a, 102b, 102c) is formed on a support substrate 102. A liquid crystal display device is fabricated using each of the 01 (101a, 101b, and 101c). The steps may be performed in the same manner as in the first to fourth embodiments.

[0104] In this way, a large substrate is used to fabricate a device layer that can be used in multiple liquid crystal display devices at once. The transposition step can improve productivity. (Sixth embodiment) The invention disclosed in this specification is applicable to both passive matrix type liquid crystal display devices and active matrix type liquid crystal display devices. The present invention can also be applied to a box-type liquid crystal display device.

[0105] A thin film transistor is manufactured, and the thin film transistor is used in a pixel portion and further in a driver circuit. In addition, a liquid crystal display device having a display function can be manufactured. A part or the whole of the circuit is formed integrally on the same substrate as the pixel section to form a system on panel. It is possible.

[0106] A liquid crystal display device includes a liquid crystal element (also called a liquid crystal display element) as a display element.

[0107] The liquid crystal display device comprises a panel in which a display element is sealed, and a controller for the panel. In this embodiment, the liquid crystal display includes a module in which an IC including a controller is mounted. The display module is shown in FIGS. 10 and 12.

[0108] In this specification, the liquid crystal display device is an image display device, a display device, or refers to a light source (including lighting equipment). Also, connectors, such as FPC (Flexible Printed Circuit) printed circuit) or TAB (Tape Automated B Tape or TCP (Tape Carrier Package) A module with a printed wiring board attached to the end of a TAB tape or TCP. or display element using the COG (Chip On Glass) method. The term "liquid crystal display device" also includes all modules in which a semiconductor integrated circuit (or other semiconductor device) is directly mounted.

[0109] The appearance and cross section of a liquid crystal display panel, which corresponds to one form of a liquid crystal display device, are shown in FIGS. 10 and 11. 10 and 12 show a liquid crystal display panel 4000 with an FPC 4018. 4001 is a thin film formed on a first substrate 4001. The thin film transistors 4010 and 4011 and the liquid crystal element 4013 are connected to the second substrate 4006. The gap is sealed with a sealant 4005. 12 corresponds to a cross-sectional view taken along line MN in FIG. 10(A).

[0110] In addition, the liquid crystal display module of FIG. 10(B) has a transparent holding member 4040 on which a liquid crystal display panel is mounted. The liquid crystal display panel 4000 is fixed to a transparent holding member 4040. It is inscribed.

[0111] As shown in FIGS. 10A and 10B, the pixel portion 4002 functioning as a display area has a side surface and a bottom surface. The liquid crystal display panel is bent to have a surface, and the bottom surface is provided continuously with the side and bottom surfaces. A first display area can be provided on the front surface and a second display area on the side surface.

[0112] A pixel portion 4002 and a scanning line driver circuit 4004 are provided on a first substrate 4001. In this way, a sealing material 4005 is provided. A second substrate 4006 is provided on the path 4004. The line driver circuit 4004 is made up of a first substrate 4001, a sealing material 4005, and a second substrate 4006. The liquid crystal layer 4008 is sealed together with the liquid crystal layer 4008 .

[0113] In addition, a separate substrate was prepared separately in an area different from the area surrounded by the sealing material. The signal line driver circuit 4003 formed of a crystalline semiconductor film or a polycrystalline semiconductor film is formed by the TAB method. It is implemented as follows.

[0114] A signal line driver circuit 4003 and a scanning line driver circuit 4004 or a pixel section 4 Various signals and potentials applied to 002 are supplied from FPC4018.

[0115] The method of connecting the separately formed drive circuit is not particularly limited, and may be a COG method, A wire bonding method, a TAB method, or the like can be used.

[0116] A pixel portion 4002 and a scanning line driver circuit 4004 are provided on a first substrate 4001. It has a plurality of thin film transistors, and in FIG. 12, the thin film transistors included in the pixel portion 4002 4004 and a thin film transistor 4010 included in the scanning line driver circuit 4004. Insulating layers 4020 and 4021 are provided on the thin film transistors 4010 and 4011. The insulating film 4023 serves as a base film.

[0117] The thin film transistors 4010 and 4011 are not particularly limited and various thin film transistors can be used. In FIG. 12, the thin film transistors 4010 and 4011 are bottom gate An example using an inverted staggered thin film transistor with a gate structure is shown. 011 indicates a channel etch type, but it is a channel protection type in which a channel protection film is provided on the semiconductor layer. An inverted staggered thin film transistor of this type may also be used.

[0118] In addition, a pixel electrode layer 4030 is provided over the first substrate 4001. The liquid crystal element 4013 is electrically connected to the thin film transistor 4010. 4030, a counter electrode layer 4031, and a liquid crystal layer 4008. Insulating films 4032 and 4033 are provided to function as alignment films so as to maintain the polarity of the counter electrode. The electrode layer 4031 is provided on the second substrate 4006 side, and the pixel electrode layer 4030 and the counter electrode layer 40 The liquid crystal layer 4008 is laminated with the liquid crystal display panel 31 .

[0119] The first substrate 4001 and the second substrate 4006 are made of a light-transmitting plastic. As for plastic, FRP (Fiberglass-R Reinforced Plastics (PVF) sheet, PVF (Polyvinyl Fluoride) film A film made of a polyester or acrylic resin can be used. A sheet with aluminum foil sandwiched between PVF film or polyester film is used. You can also be there.

[0120] 4035 is a columnar spacer obtained by selectively etching the insulating film. It is provided to control the film thickness (cell gap) of the liquid crystal layer 4008. A pacer may be used.

[0121] Although FIG. 12 shows an example of a transmissive liquid crystal display device, it can also be applied to a semi-transmissive liquid crystal display device.

[0122] In the liquid crystal display device of FIG. 12, polarizing films 4040a and 4040b are provided on the outer side of the substrate. However, the polarizing film may be provided on the inside of the substrate. The setting may be made appropriately depending on the manufacturing process conditions. A layer may be provided.

[0123] The insulating layer 4020 functions as a protective film for the thin film transistor.

[0124] The protective film (insulating layer 4020) is resistant to contamination such as organic matter, metal matter, and water vapor floating in the air. The purpose of the protective film (insulating layer 4020) is to prevent the intrusion of dye impurities, and a dense film is preferable. ) is a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, using a sputtering method. , an aluminum oxide film, an aluminum nitride film, an aluminum oxynitride film, or an aluminum nitride oxide film The aluminum film may be formed as a single layer or a multilayer.

[0125] The insulating layer 4021 functioning as a planarizing insulating film can be formed of a material such as polyimide, acrylic resin, or benzophenone. Uses heat-resistant organic materials such as cyclobutene resin, polyamide, and epoxy resin. In addition to the above organic materials, low-k materials, siloxane Resins, PSG (phosphorus glass), BPSG (borophosphorus glass), etc. can be used. In addition, by stacking multiple insulating films made of these materials, an insulating layer can be formed. good.

[0126] The method for forming the insulating layer 4021 is not particularly limited, and may be a sputtering method, a spin coating method, or the like, depending on the material. coating method, dipping method, spray coating, droplet ejection method (inkjet method, screen printing printing, offset printing, etc.), roll coating, curtain coating, knife coating When the insulating layer 4021 is formed using a material liquid, baking is performed. In this step, the semiconductor layer may be annealed (at 200°C to 400°C) at the same time. By combining the baking process with the annealing of the semiconductor layer, it is possible to efficiently manufacture liquid crystal displays. It becomes Noh.

[0127] In this specification, the liquid crystal display device is a transmissive type that displays by transmitting light from a light source. In the case of a liquid crystal display device (or a semi-transmissive liquid crystal display device), light is transmitted at least in the pixel area. Therefore, the substrate, other insulating films, and conductive films present in the pixel area through which light passes must be All of the thin films are transparent to light in the visible wavelength range.

[0128] In the electrode layer (called the pixel electrode layer, common electrode layer, counter electrode layer, etc.) that applies voltage to the liquid crystal layer, In the case of a transparent electrode, the location where the electrode layer is provided and the pattern structure of the electrode layer determine the transparency and reflectivity. Just choose.

[0129] The pixel electrode layer 4030 and the counter electrode layer 4031 are made of indium oxide containing tungsten oxide. , indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), Translucent materials such as indium zinc oxide and indium tin oxide doped with silicon oxide A conductive material can be used.

[0130] The pixel electrode layer 4030 and the counter electrode layer 4031 are made of tungsten (W) and molybdenum (M o), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb) , Tantalum (Ta), Chromium (Cr), Cobalt (Co), Nickel (Ni), Titanium ( Metals such as Ti), platinum (Pt), aluminum (Al), copper (Cu), and silver (Ag), or It can be formed using one or more of the alloys or metal nitrides. .

[0131] The pixel electrode layer 4030 and the counter electrode layer 4031 are made of a conductive polymer (conductive polymer The conductive polymer can be formed using a conductive composition containing a conductive polymer. A so-called π-electron conjugated conductive polymer can be used. For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or its derivatives, or Examples of the copolymer include copolymers of two or more of these.

[0132] In addition, thin film transistors are easily damaged by static electricity, so the gate line or source It is preferable to provide a protection circuit for protecting the driver circuit on the same substrate as the line. is preferably constructed using a nonlinear element.

[0133] In FIG. 12, the connection terminal electrode 4015 is formed from the same conductive film as the pixel electrode layer 4030. The terminal electrode 4016 is connected to the source electrode layer and the drain electrode layer of the thin film transistors 4010 and 4011. It is formed from the same conductive film as the electrode layer.

[0134] The connection terminal electrode 4015 is connected to the terminal of the FPC 4018 via the anisotropic conductive film 4019. are electrically connected.

[0135] 10(A) and 10(B), a signal line driver circuit 4003 is formed separately, and the FPC 40 18, but the present invention is not limited to this configuration. Alternatively, only a part of the signal line driver circuit or a part of the scanning line driver circuit may be separately formed. It may be implemented by creating a

[0136] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0137] (Embodiment 7) The thin film transistors included in the liquid crystal display device disclosed in this specification are not particularly limited. The thin film transistor may have a variety of structures and semiconductor materials.

[0138] An example of the structure of a thin film transistor will be described with reference to FIG. 13. FIG. 13 shows the structure of the thin film transistor in the sixth embodiment. 1. The thin film transistor 4010 shown in FIG. 3 corresponds to Figure 12.

[0139] In FIGS. 13A to 13D, an insulating film 4023 is formed on a first substrate 4001. Thin film transistors 4010a, 4010b, 4010c, and 4010d are formed on an insulating film 4023. On the thin film transistors 4010a, 4010b, 4010c, and 4010d Insulating layers 4020 and 4021 are formed, and thin film transistors 4010a, 4010b, A pixel electrode layer 4030 is provided which is electrically connected to 4010c and 4010d.

[0140] The thin film transistor 4010a is the same as the thin film transistor 4010 in FIG. The wiring layers 405a and 405b functioning as a source electrode layer and a drain electrode layer, and the semiconductor layer 40 3 contacts with no n+ layer in between.

[0141] The thin film transistor 4010a is an inverted staggered thin film transistor and has an insulating surface. A gate electrode layer 401 and a gate insulating film 4023 are formed on a first substrate 4001, which is a substrate. the layer 402, the semiconductor layer 403, the wiring layer 40 serving as a source electrode layer or a drain electrode layer, Includes 5a and 405b.

[0142] The thin film transistor 4010b is a bottom gate thin film transistor having an insulating surface. The first substrate 4001 is a substrate to be used as a gate electrode layer 401, and the insulating film 4023 are formed on the first substrate 4001. The insulating layer 402, the wiring layers 405a and 405b functioning as source and drain electrode layers, and the wiring layers 405c and 405d functioning as source and drain electrode layers are b, n acting as a source or drain region + Layers 404a, 404b, and semiconductor The insulating layer 403 covers the thin film transistor 4010b and is in contact with the semiconductor layer 403. A veneer 407 is provided. + The layers 404a and 404b have a lower resistance than the semiconductor layer 403. It is a semiconductor layer.

[0143] In addition, n + The layers 404a and 404b are formed between the gate insulating layer 402 and the wiring layers 405a and 405b. It may also be a structure in which the n + The layer is formed between the gate insulating layer and the wiring layer, and between the wiring layer and the A structure in which the insulating film is provided between the semiconductor layers and on both sides may also be used.

[0144] The thin film transistor 4010b has a gate electrode in the entire region including the thin film transistor 4010b. The first substrate is a substrate having a gate insulating layer 402 and an insulating surface. A gate electrode layer 401 is provided between the plates 4001. A wiring Layers 405a, 405b, and n + Layers 404a and 404b are provided. The insulating layer 402, the wiring layers 405a, 405b, and + On the layers 404a and 404b, a semiconductor Although not shown, a wiring layer 403 is provided on the gate insulating layer 402. In addition to the semiconductor layers 405a and 405b, a wiring layer is provided, which extends outward from the outer periphery of the semiconductor layer 403. It exists.

[0145] The thin film transistor 4010c is the same as the thin film transistor 4010b except that the source electrode layer and The drain electrode layer and the semiconductor layer are + The structure is such that the two contact each other without any intervening layer.

[0146] The thin film transistor 4010c has a gate electrode in the entire region including the thin film transistor 4010c. The first substrate is a substrate having a gate insulating layer 402 and an insulating surface. A gate electrode layer 401 is provided between the plates 4001. A wiring The gate insulating layer 402 and the wiring layer 405a are provided. , 405b, the semiconductor layer 403 is provided on the gate insulating layer 4 402 has wiring layers 405a and 405b and a wiring layer on the semiconductor layer 403. It extends outward from the outer periphery of the

[0147] The thin film transistor 4010d is a top-gate thin film transistor. The transistor 4010d is an example of a planar thin film transistor. On a first substrate 4001, an insulating film 4023 is formed. to do + a semiconductor layer 403 including layers 404a and 404b; a gate insulating layer on the semiconductor layer 403; A gate insulating layer 402 is formed on the gate electrode layer 401. n + Wirings that are in contact with the layers 404a and 404b and function as source and drain electrode layers Layers 405a and 405b are formed. + The layers 404a and 404b are semiconductor layers 403 It is a semiconductor region with lower resistance.

[0148] A top-gate type forward staggered thin film transistor may be used as the thin film transistor.

[0149] In this embodiment, a single gate structure has been described, but a multi-gate structure such as a double gate structure may also be used. In this case, a gate electrode layer may be provided above and below the semiconductor layer. Alternatively, a structure in which a plurality of gate electrode layers are provided on only one side (upper or lower) of the semiconductor layer may be used.

[0150] The semiconductor material used for the semiconductor layer is not particularly limited. Examples of materials that can be used are described below.

[0151] The semiconductor layers of semiconductor elements are made of semiconductor materials such as silane and germane. Amorphous (hereinafter referred to as amorphous) is a material produced by vapor deposition or sputtering using a source gas. (Also called "AS") semiconductor, the amorphous semiconductor is Crystallized polycrystalline semiconductor or microcrystalline (semi-amorphous or microcrystalline) Also called "SAS" hereafter.) Semiconductors, etc. can be used. The layer can be deposited by sputtering, LPCVD, or plasma CVD. .

[0152] Considering the Gibbs free energy, the microcrystalline semiconductor film is a quasi-stable film intermediate between amorphous and single crystal. In other words, it is a semiconductor that has a third thermodynamically stable state. Therefore, the columnar or needle-like crystals are aligned perpendicular to the substrate surface. Microcrystalline silicon, a typical example of a microcrystalline semiconductor, has a Raman spectrum Torr is 520 cm, which indicates single crystal silicon -1 It is shifted to the lower wavenumber side than 520cm indicating single crystal silicon -1 and 480 cm, which indicates amorphous silicon -1 Between The Raman spectrum of microcrystalline silicon has a peak at the The bond is terminated with at least 1 atomic % or more of hydrogen or halogen. Furthermore, rare gas elements such as helium, argon, krypton, and neon are added to the quartz crystal. By further promoting the quantum distortion, stability is increased and a good microcrystalline semiconductor film can be obtained.

[0153] This microcrystalline semiconductor film is formed by a high-frequency plasma CVD method with a frequency of several tens to several hundreds of MHz, or Alternatively, it can be formed by a microwave plasma CVD device with a frequency of 1 GHz or more. Typically, silicon hydrides such as SiH4, Si2H6, SiH2Cl2, and SiHCl3 It can be formed by diluting silicon halides such as SiCl4 and SiF4 with hydrogen. In addition to silicon hydride and hydrogen, helium, argon, krypton, and neon can be selected. A microcrystalline semiconductor film can be formed by diluting the gas with one or more rare gas elements. In these cases, the flow rate ratio of hydrogen to silicon hydride is set to 5 times or more and 200 times or less, preferably 5 The concentration is preferably 0 to 150 times, more preferably 100 times.

[0154] Representative amorphous semiconductors include hydrogenated amorphous silicon and crystalline semiconductors. A typical example is polysilicon. Polysilicon (polycrystalline silicon) has the following features: , which uses polysilicon as the main material and is formed through a process temperature of 800°C or higher. The main materials are high-temperature polysilicon and polysilicon formed at process temperatures below 600°C. The so-called low-temperature polysilicon is used as a material for the crystallization of amorphous silicon. It contains polysilicon, which is made by crystallizing silicon. Of course, as mentioned above, A semiconductor or a semiconductor layer containing a crystalline phase in part can also be used.

[0155] In addition to elements such as silicon (Si) and germanium (Ge), semiconductor materials include Compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, and SiGe are also used. You can be there.

[0156] When a crystalline semiconductor film is used as the semiconductor layer, the crystalline semiconductor film can be manufactured by various methods. Methods (laser crystallization, thermal crystallization, or using elements that promote crystallization such as nickel) In addition, the SAS microcrystalline semiconductor can be irradiated with laser to form a crystal. If no element that promotes crystallization is introduced, the material will be amorphous. Before irradiating the semiconductor film with laser light, it was heated at 500°C for 1 hour in a nitrogen atmosphere. The hydrogen concentration in the amorphous semiconductor film was 1×10 20 atoms / cm 3 Released to the following This is because when an amorphous semiconductor film containing a large amount of hydrogen is irradiated with laser light, the amorphous semiconductor film is broken down. Because it will be destroyed.

[0157] When an amorphous semiconductor film is crystallized using an element that promotes (accelerates) crystallization, The elements that contribute to growth are iron (Fe), nickel (Ni), cobalt (Co), ruthenium ( Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (I One or more metal elements selected from the group consisting of platinum (Pt), copper (Cu) and gold (Au) As a method for introducing a metal element into an amorphous semiconductor film, the metal element can be introduced by There is no particular limitation on the method as long as it can make the metal element exist on the surface or inside of the amorphous semiconductor film. For example, sputtering, CVD, plasma processing (including plasma CVD), adsorption, A method of applying a solution of a metal salt can be used. This is useful in that the concentration of the metal element can be easily adjusted. The wettability of the semiconductor film surface is improved, and the metal salt solution is spread over the entire surface of the amorphous semiconductor film. To achieve this, UV light irradiation in an oxygen atmosphere, thermal oxidation, and ozone containing hydroxyl radicals are used. An oxide film can be formed on the surface of an amorphous semiconductor film by treatment with water or hydrogen peroxide. desirable.

[0158] In addition, when crystallization is performed using an element that promotes crystallization, heat treatment (550°C to 750°C for 3 The procedure may be performed for 1 minute to 24 hours.

[0159] In order to remove or reduce elements that promote crystallization from the crystalline semiconductor film, A semiconductor film containing an impurity element is formed in contact with the substrate, and functions as a gettering sink. As for pure elements, impurity elements that give n-type conductivity, impurity elements that give p-type conductivity, and rare gas elements For example, phosphorus (P), nitrogen (N), arsenic (As), antimony ( Sb), Bismuth (Bi), Boron (B), Helium (He), Neon (Ne), Argon One or more selected from Ar (Ar), Kr (krypton), and Xe (xenon) are used. A crystalline semiconductor film containing an element that promotes crystallization can be formed by adding a semiconductor containing a rare gas element. A conductive film is formed and then heat treated (at 550°C to 750°C for 3 minutes to 24 hours). The elements contained in the film that promote crystallization move into the semiconductor film containing the rare gas element, and the crystallization The elements that promote crystallization in the semiconductor film are removed or reduced. The semiconductor film containing the rare gas element that has become a mask is then removed.

[0160] The crystallization of the amorphous semiconductor film may be performed by combining a heat treatment and crystallization by laser light irradiation. The heat treatment or the laser light irradiation may be performed individually or multiple times.

[0161] Alternatively, the crystalline semiconductor film may be formed directly on the substrate by a plasma method. A crystalline semiconductor film may be selectively formed on a substrate by using a method.

[0162] The semiconductor layer may also be made of an oxide semiconductor, such as zinc oxide (ZnO) or tin oxide. (SnO2) can also be used. When ZnO is used for the semiconductor layer, the gate insulating layer Y2O3, Al2O3, TiO2, and laminations of these materials are used to form gate electrode layers and source electrodes. The electrode layer and the drain electrode layer may be made of ITO, Au, Ti, or the like. In, Ga, etc. can also be added to ZnO.

[0163] InMO3(ZnO) as an oxide semiconductor m A thin film expressed as (m>0) can be used. M can be gallium (Ga), iron (Fe), nickel (Ni), manganese (M n) and cobalt (Co). M can be Ga, or it can be any of the above other than Ga, such as Ga and Ni or Ga and Fe. In some cases, the oxide semiconductor contains a metal element. Some of them contain transition metals or oxides of transition metals. For example, oxide semiconductor layers As the insulating layer, an In-Ga-Zn-O based non-single crystal film can be used.

[0164] Instead of In-Ga-Zn-O based non-single crystal film, oxide semiconductor layer with M as other metal element (InMO3(ZnO) m (m>0) membrane may also be used.

[0165] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0166] (Embodiment 8) The liquid crystal display device disclosed in this specification can be applied to various electronic devices (including gaming machines). The electronic device can be, for example, a television device (television or television (also called digital receivers), computer monitors, digital cameras, digital video cameras digital photo frames, mobile phones (also called mobile phones or mobile phone devices), Examples include large game machines such as small game machines, mobile information terminals, sound reproduction devices, and pachinko machines. can be.

[0167] In this embodiment, an example in which the liquid crystal display device disclosed in this specification is applied to a mobile phone is shown in FIG. and FIG. 15.

[0168] FIG. 14(C) is a front view of the mobile phone, and FIG. 14(D) is a side view of the mobile phone. 14B is a vertical view of the mobile phone, and the housings are made up of housings 1411a and 1411b. At least the display area of ​​the housings 1411a and 1411b is made of a transparent holding member. FIG. 14(A) is a cross-sectional view of the inside of the housing 1411a and the housing 1411b. When viewed from the front, 411a has a rectangular shape with long and short sides, and the corners of the rectangle are rounded. In this embodiment, the direction parallel to the long side of the rectangular front shape is the longitudinal direction. The direction parallel to the short side is called the transverse direction.

[0169] The shapes of the housings 1411a and 1411b when viewed from the side are also rectangular with long and short sides. In this embodiment, the long side of the rectangular shape is The direction parallel to the sides is the longitudinal direction, and the direction parallel to the short sides is called the depth direction.

[0170] The mobile phone shown in FIGS. 14(A) to 14(D) has a display area 1413, operation buttons 1414, and a 404, a touch panel 1423, and a liquid crystal display panel in the housings 1411a and 1411b. The touch panel 14 includes a filter 1421, a backlight 1424, and a wiring board 1425. 23 may be provided as needed.

[0171] The liquid crystal display panel 1421 is the same as the liquid crystal display panel and liquid crystal display model described in the first to seventh embodiments. Joules can be used.

[0172] As shown in FIGS. 14B and 14C, the liquid crystal display panel 1421 has a shape of a housing 1411a. The reflective layer is arranged so as to cover not only the front area on the viewing side but also a part of the upper and lower areas. Therefore, a display area continuous with the display area 1413 is also provided at the top of the mobile phone in the longitudinal direction. That is, the display area 1427 can be formed on the top surface of the mobile phone. This allows you to take out your mobile phone even if you put it in your breast pocket. You can view the display area 1427 without taking it out.

[0173] The display areas 1413 and 1427 display whether there is an email, whether there is an incoming call, the date and time, the telephone number, the name of the person, etc. If necessary, only the display area 1427 may be displayed, and the other areas may be displayed. By not displaying the information, energy savings can be achieved.

[0174] A cross-sectional view of FIG. 14(D) is shown in FIG. 15. As shown in FIG. 15, A liquid crystal display panel 1421 is provided continuously from the top to the front and bottom. A backlight 1424 is provided on the back of the liquid crystal display panel 1421, and is electrically connected to the liquid crystal display panel 1421. A wiring board 1425 and a battery 1426 are arranged to connect the A touch panel 1423 is arranged circumscribing the display on the viewing side.

[0175] The mobile phone of this embodiment can display images and text whether it is placed vertically or horizontally. can.

[0176] The liquid crystal display panel 1421 is not manufactured separately for the front and top areas, but for the front display area. Since it is made to exist in both the area 1413 and the upper display area 1427, the manufacturing cost is This reduces the cost and manufacturing time.

[0177] A touch panel 1423 is arranged on the housing 1411a, and a display area 1413 is A touch panel button 1414 is displayed. By touching the button 1414 with a finger, This allows the user to operate the display contents of the display area 1413. The email is created by touching the button 1414 in the display area 1413 with a finger or the like. It is possible to do so.

[0178] The button 1414 on the touch panel 1423 can be displayed when necessary. When 14 is not required, images and text can be displayed in the entire display area 1413.

[0179] Furthermore, the upper long side of the cross-sectional shape of the mobile phone may also have a radius of curvature. When the shape is formed so that the upper long side has a curvature radius, the liquid crystal display panel 1421 and the touch panel The cross-sectional shape of each panel 1423 also has a radius of curvature on the upper long side. The body 1411a also has a curved shape. That is, when the display area 1413 is viewed from the front, It will be round and protruding towards the front.

Claims

[Claim 1] forming an element layer including a thin film transistor on a formation substrate; transferring the element layer from the fabrication substrate to a support substrate; a first substrate is bonded along the curved surface of the first support; disposing the support substrate and the first support so that the element layer faces the first substrate; and transposing the element layer onto the first substrate; forming spacers on the second substrate; a surface of the second substrate on which the spacers are not formed and an inner surface of a curved second support are arranged to face each other, and the second substrate is bonded to the inner surface of the second support; the first support member on which the element layer and the first substrate are provided and the second support member on which the spacer and the second substrate are provided are disposed so that the element layer and the spacer face each other; the first substrate and the second substrate are bonded together with a sealant, with the liquid crystal layer and the element layer sandwiched therebetween; a method for manufacturing a liquid crystal display panel, comprising removing the first support and the second support, and forming a liquid crystal display panel having a curved portion that reflects the shapes of the first support and the second support.

Images