Test device and manufacturing method of semiconductor device

Abstract

To provide a test device capable of improving the conductivity between a probe pin and an external terminal of a semiconductor device while inhibiting a probe pin from being broken.SOLUTION: The test device includes a socket base, a probe guide, and a probe pin. The socket base includes a first surface and a second surface opposite the first surface in a first direction. The socket base is provided with a first opening penetrating the socket base along the first direction. The probe guide is movably arranged in the first opening along the first direction. The probe guide includes a first end that protrudes from the first surface when moved from the first surface side to the second surface side along the first direction, and a second end opposite the first end. The probe guide is provided with a second opening penetrating the probe guide along the first direction.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a test device and a method for manufacturing a semiconductor device. [Background technology]

[0002] Japanese Patent Laid-Open Publication No. 2019-219350 (Patent Document 1) describes a test apparatus. The test apparatus includes an outer plunger and a probe pin. The outer plunger is cylindrical and extends along a first direction. An opening is formed in the outer plunger, penetrating the outer plunger along the first direction. The outer plunger has a first end and a second end opposite the first end in the first direction. The probe pin extends along the first direction. The probe pin has a third end in the first direction. The probe pin has a tip located at the third end. The tip of the probe pin is inserted into the opening of the outer plunger from the second end side, and the third end protrudes from the first end. In the test apparatus of Patent Document 1, the tip of the probe pin comes into contact with an external terminal of the semiconductor device, thereby testing the semiconductor device. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-219350 Summary of the Invention [Problem to be solved by the invention]

[0004] In the test device described in Patent Document 1, multiple protrusions are formed at the tip of the probe pin, and each of the multiple protrusions contacts an external terminal of the semiconductor device. As a result, the load acting between one protrusion and the external terminal of the semiconductor device becomes small, which can result in insufficient electrical conduction between the probe pin and the external terminal of the semiconductor device. Other problems and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0005] The test apparatus of the present disclosure includes a socket base, a probe guide, and a probe pin. The socket base has a first surface and a second surface opposite the first surface in a first direction. The socket base has a first opening penetrating the socket base along the first direction. The probe guide is disposed in the first opening so as to be movable along the first direction. The probe guide has a first end that protrudes from the first surface when moved along the first direction from the second surface side toward the first surface side, and a second end that is the end opposite the first end. The probe guide has a second opening penetrating the probe guide along the first direction. The probe pin extends along the first direction and has a tip portion located at a third end that is the end in the first direction. The outer diameter of the tip portion decreases as it approaches the third end. The tip portion is inserted into the second opening from the second end side so that the third end can protrude from the first end. When the tip portion contacts an external terminal of the semiconductor device, the probe guide and the probe pin are integrated. [Effects of the Invention]

[0006] According to the test device of the present disclosure, it is possible to improve the conductivity between the probe pin and the external terminal of the semiconductor device while suppressing breakage of the probe pin. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 2 is a cross-sectional view of the test apparatus TAP. [Figure 2] FIG. 2 is a cross-sectional view of the probe PRO. [Figure 3] FIG. 1 is a schematic side view of an inspection device using the test device TAP. [Figure 4] 10A to 10C are manufacturing process diagrams of the semiconductor device SDEV. [Figure 5] FIG. 10 is a first explanatory diagram illustrating the effect of the test device TAP. [Figure 6A]FIG. 2 is a second explanatory diagram illustrating the effect of the test device TAP. [Figure 6B] FIG. 10 is a third explanatory diagram illustrating the effect of the test device TAP. [Figure 7A] FIG. 10 is a schematic first cross-sectional view of a test apparatus TAP according to a modified example. [Figure 7B] FIG. 10 is a second schematic cross-sectional view of the test apparatus TAP according to the modified example. DETAILED DESCRIPTION OF THE INVENTION

[0008] The details of the embodiments of the present disclosure will be described with reference to the drawings. In the following drawings, the same or corresponding parts are designated by the same reference numerals, and redundant explanations will not be repeated. The test apparatus according to the embodiment is referred to as a test apparatus TAP.

[0009] (Configuration of test equipment TAP) The configuration of the test equipment TAP will be explained below.

[0010] FIG. 1 is a cross-sectional view of the test apparatus TAP. FIG. 2 is a cross-sectional view of the probe PRO. As shown in FIGS. 1 and 2, the test apparatus TAP has a socket base SB and a probe PRO. The test apparatus TAP may have multiple probes PRO (see FIG. 3). The test apparatus TAP is a test apparatus that tests a semiconductor device SDEV having an external terminal TER. The semiconductor device SDEV has an integrated circuit, and the external terminal TER is electrically connected to the integrated circuit. The external terminal TER is, for example, a solder ball.

[0011] The socket base SB has a first surface SBa and a second surface SBb in the first direction DR1. The second surface SBb is the surface opposite to the first surface SBa. The socket base SB is disposed so that the first surface SBa faces the external terminal TER. An opening OP1 is provided in the socket base SB. The opening OP1 extends along the first direction DR1 and penetrates the socket base SB. Note that if the test apparatus TAP has multiple probes PRO, multiple openings OP1 will be provided in the socket base SB. The socket base SB has, for example, a first plate member PL1 and a second plate member PL2. The first plate member PL1 is overlaid on the second plate member PL2. The first plate member PL1 forms the first surface SBa, and the second plate member PL2 forms the second surface SBb.

[0012] The probe PRO has a probe guide PG, a probe pin PP, an electrode EL, a first spring SP1, and a second spring SP2. The probe PRO is movable in the opening OP1 along a first direction DR1. The stroke width over which the probe PRO can move in the opening OP1 is, for example, 450 μm or more and 500 μm or less.

[0013] The probe guide PG is disposed within the opening OP1. The probe guide PG is movable along the first direction DR1. The probe guide PG is cylindrical and extends along the first direction DR1. The probe guide PG has a first end PGa and a second end PGb in the first direction DR1. When the probe guide PG is moved along the first direction DR1 from the second surface SBb side toward the first surface SBa side, the first end PGa protrudes from the first surface SBa. The second end PGb is the end opposite to the first end PGa. An opening OP2 is formed in the probe guide PG. The opening OP2 penetrates the probe guide PG along the first direction DR1.

[0014] The opening OP2 has a first portion OP2a and a second portion OP2b. The first portion OP2a extends from the second end PGb toward the first end PGa. The second portion OP2b extends from the first portion OP2a to the first end PGa. The inner diameter of the first portion OP2a is a first inner diameter d1, and the inner diameter of the second portion OP2b is a second inner diameter d2. The first inner diameter d1 is, for example, constant. However, at the end portion on the second portion OP2b side, the first inner diameter d1 becomes smaller as it approaches the second portion OP2b. Furthermore, at the point where the first portion OP2a and the second portion OP2b are connected, the first inner diameter d1 is equal to the second inner diameter d2. The second inner diameter is, for example, constant.

[0015] A protrusion PRT is formed on the outer peripheral surface of the probe guide PG. The protrusion PRT extends in the circumferential direction, i.e., along the circumferential direction centered on the central axis of the probe guide PG when viewed along the first direction DR1. The outer diameter of the probe guide PG is largest at the protrusion PRT. The inner diameter of the opening OP1 at the end on the first surface SBa side is defined as a third inner diameter d3, and the inner diameter of the opening OP1 between the end on the first surface SBa side and the end on the second surface SBb side is defined as a fourth inner diameter d4. The outer diameter of the probe guide PG at the protrusion PRT is defined as a first outer diameter D1, and the outer diameter of the probe guide PG other than the protrusion PRT is defined as a second outer diameter D2. The third inner diameter d3 is smaller than the first outer diameter D1 and larger than the second outer diameter D2. Therefore, the portion of the probe guide PG located between the protrusion PRT and the first end PGa can protrude from the first surface SBa.

[0016] The probe pin PP extends along a first direction DR1. The probe pin PP has a third end PPa and a fourth end PPb in the first direction DR1. The probe pin PP has a tip end TIP, a base end BS, a connection portion CN, and a shaft portion SH. The probe pin PP is made of a conductive material.

[0017] The tip portion TIP is located at the third end PPa. The shape of the tip portion TIP is, for example, a cone. The shape of the tip portion TIP is, for example, a polygonal cone, a cone, or a cone with a generating line that is a parabola or a hyperbola. Note that even if the third end PPa is not a point, it is considered to be a cone. The base end BS is located farther from the third end PPa than the tip portion TIP in the first direction DR1. The connection portion CN is located between the tip portion TIP and the base end BS in the first direction DR1 and connects the tip portion TIP and the base end BS. The shaft portion SH is connected to the base end BS at one end in the first direction DR1 and forms the fourth end PPb at the other end in the first direction DR1.

[0018] The outer diameter of the tip portion TIP is the third outer diameter D3, and the outer diameter of the connection portion CN is the fourth outer diameter D4. The outer diameter of the base portion BS is the fifth outer diameter D5. The third outer diameter D3 decreases toward the third end PPa. The maximum value of the third outer diameter D3 is, for example, 150 μm or more and less than 160 μm. At the location where the tip portion TIP and the connection portion CN are connected, the third outer diameter D3 is equal to the fourth outer diameter D4. The fourth outer diameter D4 is, for example, constant. The fifth outer diameter D5 is, for example, constant. However, at the end on the connection portion CN side, the fifth outer diameter D5 decreases toward the connection portion CN. Furthermore, at the location where the base portion BS and the connection portion CN are connected, the fifth outer diameter D5 is equal to the fourth outer diameter D4. That is, the fourth outer diameter D4 is equal to the maximum value of the third outer diameter D3 and the minimum value of the fifth outer diameter D5. The outer diameter of the shaft portion SH is smaller than the fifth outer diameter D5.

[0019] The difference between the third inner diameter d3 and the second outer diameter D2 is, for example, smaller than the difference between the second inner diameter d2 and the fourth outer diameter D4. The value obtained by dividing the difference between the third inner diameter d3 and the second outer diameter D2 by 2 is, for example, not less than 7.5 μm and less than 17.5 μm. The value obtained by dividing the difference between the second inner diameter d2 and the fourth outer diameter D4 by 2 is, for example, not less than 17.5 μm and less than 32.5 μm.

[0020] The tip portion TIP is inserted into the opening OP2 from the second end PGb side so that the third end PPa protrudes from the first end PGa. The second inner diameter d2 is larger than the fourth outer diameter D4 but smaller than the maximum value of the fifth outer diameter D5. Therefore, when the probe pin PP is moved along the first direction DR1 so that the base end BS approaches the first end PGa, the base end BS gets caught on the second portion OP2b and cannot get any closer to the first end PGa. The tip portion TIP and the connecting portion CN have a length that allows the third end PPa to protrude from the first end PGa when the base end BS is caught on the second portion OP2b. The third end PPa protrudes from the first end PGa when the first end PGa protrudes from the first surface SBa. When the central axis of the probe pin PP is tilted with respect to the first direction DR1, it comes into contact with the inner wall surface of the opening OP2.

[0021] The electrode EL has a support portion EL1, an axial portion EL2, and a contact portion EL3. The support portion EL1 has a third surface EL1a and a fourth surface EL1b in the first direction DR1. The fourth surface EL1b is the surface opposite the third surface EL1a. The axial portion EL2 extends from the third surface EL1a along the first direction DR1. The axial portion EL2 has a fifth end EL2a and a sixth end EL2b in the first direction DR1. The sixth end EL2b is the end opposite the fifth end EL2a. The axial portion EL2 is connected to the support portion EL1 (the third surface EL1a) at the sixth end EL2b. A hole EL2c is formed in the fifth end EL2a. The hole EL2c extends from the fifth end EL2a toward the sixth end EL2b along the first direction DR1. The contact portion EL3 extends from the fourth surface EL1b along the first direction DR1. The electrode EL is made of a conductive material.

[0022] The stem SH is inserted into the hole EL2c so as to be slidable along the inner wall surface of the hole EL2c in the first direction DR1. This electrically connects the probe pin PP and the electrode EL to each other. The first spring SP1 connects the base end BS and the support portion EL1 so as to surround the stem SH. The second spring SP2 connects the protrusion PRT and the support portion EL1 so as to surround the first spring SP1 and the stem SH.

[0023] When the distance between the base end BS and the support portion EL1 becomes small, the first spring SP1 generates an elastic force to the base end BS and the support portion EL1 so that the base end BS and the support portion EL1 move away from each other. The second spring SP2 generates an elastic force to the probe guide PG and the support portion EL1 so that the probe guide PG and the support portion EL1 move closer to each other. In other words, the elastic force of the second spring SP2 integrates the probe pin PP and the probe guide PG. The spring constant of the first spring SP1 is, for example, larger than the spring constant of the second spring SP2.

[0024] Fig. 3 is a schematic side view of an inspection device using the test device TAP. As shown in Fig. 3, the inspection device has a substrate SUB in addition to the test device TAP. Pads PAD are provided on the surface of the substrate SUB. A power supply is connected to the substrate SUB. When the electrodes EL contact the pads PAD and the probe pins PP (tip portions TIP) contact the external terminals TER, a current flows through the semiconductor device SDEV via the probes PRO. This allows the semiconductor device SDEV to be inspected.

[0025] (Method of manufacturing semiconductor device SDEV) A method for manufacturing the semiconductor device SDEV will be described below.

[0026] 4 is a manufacturing process diagram of the semiconductor device SDEV. As shown in FIG. 4, the manufacturing method of the semiconductor device SDEV includes a preparation step S1, a contact step S2, and a testing step S3. In the preparation step S1, a semiconductor device SDEV1 is prepared. The configuration of the semiconductor device SDEV1 is the same as that of the semiconductor device SDEV, except that the semiconductor device SDEV1 has not been subjected to the contact step S2, i.e., the external terminal TER has not been deformed.

[0027] In the contact step S2, the tip portion TIP is brought into contact with the external terminal TER to deform the external terminal TER, thereby electrically connecting the probe pin PP and the external terminal TER. More specifically, first, the test device TAP is placed on the substrate SUB so that the second surface SBb faces the substrate SUB and the electrode EL faces the pad PAD. Second, the semiconductor device SDEV1 is housed in the socket SOC. The socket SOC has a pedestal PD and a cover CV. The semiconductor device SDEV1 is placed on the pedestal PD so that the external terminal TER is exposed from an opening provided in the bottom wall of the pedestal PD. After the semiconductor device SDEV1 is placed on the pedestal PD, the pedestal PD is closed with the cover CV.

[0028] Third, the socket SOC is placed on the test device TAP so that the first surface SBa faces the external terminal TER (so that the external terminal TER and the tip portion TIP face each other). Fourth, the socket SOC is pressed toward the test device TAP. This brings the tip portion TIP into contact with the external terminal TER, reducing the distance between the base end portion BS and the support portion EL1. As a result, the elastic force of the first spring SP1 presses the tip portion TIP against the external terminal TER, deforming the external terminal TER (forming an indentation on the surface of the external terminal TER), and electrically connecting the tip portion TIP and the external terminal TER. This turns the semiconductor device SDEV1 into the semiconductor device SDEV. The load applied from the tip portion TIP to the external terminal TER is, for example, equal to or greater than 0.27 N (28 gf) and less than 0.31 N (32 gf). At this time, the contact portion EL3 is pressed against the pad PAD, and electrical conduction is also established between the pad PAD and the electrode EL.

[0029] In the testing step S3, a current flows from the substrate SUB to the semiconductor device SDEV via the probe PRO, thereby testing the semiconductor device SDEV. In this way, the semiconductor device SDEV is manufactured.

[0030] (Effect of the TAP test device) The effects of the test device TAP will be explained below.

[0031] 5 is a first explanatory diagram illustrating the effect of the test apparatus TAP. As shown in FIG. 5, an oxide film OF is formed on the surface of the external terminal TER. Therefore, unless the oxide film OF is broken by contact with the tip portion TIP, electrical continuity between the probe pin PP and the external terminal TER will not be established. In this regard, the tip portion TIP of the test apparatus TAP is needle-shaped, and the tip portion TIP contacts the oxide film OF at one point. Therefore, the load at the contact point between the tip portion TIP and the oxide film OF becomes large, making the oxide film OF more likely to break.

[0032] When the tip of the probe pin contacts the oxide film OF at multiple protrusions, the load per contact point is smaller, making the oxide film OF less likely to be damaged. As a result, the period during which stable testing can be performed is shorter than with a test device TAP, in which the tip TIP contacts the oxide film OF at a single point. Furthermore, when the tip of a probe pin has multiple protrusions, the recesses between adjacent protrusions tend to become clogged with dirt, requiring periodic cleaning.

[0033] 6A is a second explanatory diagram illustrating the effect of the test apparatus TAP. As shown in FIG. 6A, the tip portion TIP may come into contact with the external terminal TER when the center of the tip portion TIP is shifted from the center of the external terminal TER. If the test apparatus TAP does not have a probe guide PG, a load is applied to the connection point between the connection portion CN and the base end portion BS, which may cause a crack CR to occur at that point and break the probe pin PP.

[0034] FIG. 6B is a third explanatory diagram illustrating the effects of the test apparatus TAP. As shown in FIG. 6B, the test apparatus TAP has a probe guide PG, which is integrated with the probe pin PP. Therefore, even if the tip portion TIP contacts the external terminal TER with its center offset from the center of the external terminal TER, the probe pin PP (connection portion CN) is supported by the inner wall surface of the opening OP2, thereby reducing the load applied to the connection between the connection portion CN and the base end BS. In this way, the test apparatus TAP can improve the conductivity between the probe pin PP and the external terminal TER while suppressing breakage of the probe pin PP. This ultimately leads to an extension of the life of the probe PRO. Note that even when the central axis of the probe pin PP is inclined with respect to the first direction DR1, the probe pin PP is supported by the inner wall surface of the opening OP2, thereby similarly suppressing breakage of the probe pin PP.

[0035] If the semiconductor device SDEV1 is, for example, a BGA package, the number of external terminals TER will be large. As a result, if the tip of the probe pin has multiple protrusions, in order to increase the load per contact point, an extremely large load must be applied to the socket SOC, which is difficult to achieve with a normal testing device. On the other hand, with the testing device TAP, the tip TIP contacts the external terminal TER at one point, so even if the number of external terminals TER is large, the load per contact point can be increased without applying an excessive load to the socket SOC.

[0036] When the difference between the third inner diameter d3 and the second outer diameter D2 is smaller than the difference between the second inner diameter d2 and the fourth outer diameter D4, it is possible to suppress the positional deviation of the probe PRO within the first opening OP1 while suppressing breakage of the probe pin PP.

[0037] As the third outer diameter D3 decreases, the tip portion TIP becomes more pointed, reducing the contact area between the tip portion TIP and the external terminal TER and improving the conductivity between the probe pin PP and the external terminal TER. On the other hand, as the third outer diameter D3 decreases, the fourth outer diameter D4 also decreases, making the probe pin PP more likely to break at the connection point between the connection portion CN and the base end BS. Therefore, by setting the maximum value of the third outer diameter D3 to be 150 μm or more and less than 160 μm, it is possible to both prevent breakage of the probe pin PP and improve the conductivity with the external terminal TER.

[0038] (Variation) A test apparatus TAP according to a modified example will be described below.

[0039] 7A is a schematic first cross-sectional view of a test apparatus TAP according to a modified example. FIG. 7B is a schematic second cross-sectional view of the test apparatus TAP according to a modified example. As shown in FIGS. 7A and 7B, the probe guide PG has a first portion PG1 and a second portion PG2. The first portion PG1 extends from the first end PGa toward the second end PGb along a first direction DR1. The second portion PG2 extends from the first portion PG1 to the second end PGb along the first direction DR1.

[0040] The third inner diameter d3 is larger than the fourth inner diameter d4. The outer diameter of the first portion PG1 is larger than the outer diameter of the second portion PG2. The outer diameter of the first portion PG1 is smaller than the third inner diameter d3 and larger than the fourth inner diameter d4. The inner diameter of the opening OP2 decreases from the second end PGb side toward the first end PGa side. Therefore, when the probe pin PP moves in the direction from the second surface SBb toward the first surface SBa, the probe pin PP and the probe guide PG move together, but when the probe pin PP moves in the direction from the first surface SBa toward the second surface SBb, the movement of the probe guide PG is restricted by the step on the inner wall surface of the opening OP1. That is, when the tip portion TIP is in contact with the external terminal TER, the probe guide PG is integrated with the probe pin PP (tip portion TIP) (see FIG. 7A), whereas when the tip portion TIP is not in contact with the external terminal TER, the probe guide PG is separated from the probe pin PP (see FIG. 7B).

[0041] In this case, when the tip portion TIP is in contact with the external terminal TER, the probe guide PG becomes one with the probe pin PP (tip portion TIP), thereby preventing breakage of the probe pin PP. Also, in this case, the second spring SP2 is not required, which makes it possible to reduce the number of parts constituting the probe PRO.

[0042] The invention made by the inventor has been specifically described above based on an embodiment, but it goes without saying that the present invention is not limited to the above embodiment and can be modified in various ways without departing from the gist of the invention. [Explanation of symbols]

[0043] BS base end, CN connection part, CV cover, CR crack, D1 first outer diameter, D2 second outer diameter, D3 third outer diameter, D4 fourth outer diameter, D5 fifth outer diameter, DR1 first direction, EL electrode, EL1 support part, EL1a third surface, EL1b fourth surface, EL2 shaft part, EL2a fifth end, EL2b sixth end, EL2c hole, EL3 contact part, OF oxide film, OP1 opening, OP2 opening, OP2a first part, OP2b second part, PAD pad, PD base, PG probe guide, PGa first end, PGb second end, PG1 second part, PG2 first part, PL1 first plate member, PL2 second plate member, PP probe pin, PPb fourth end, PRO probe, PRT protrusion, S1 preparation process, S2 contact process, S3 test process, SB socket base, SBa First surface, SBb second surface, SDEV, SDEV1 semiconductor device, SH shaft portion, SOC socket, SP1 first spring, SP2 second spring, SUB substrate, TAP test equipment, TER external terminal, TIP tip portion, d1 first inner diameter, d2 second inner diameter, d3 third inner diameter, d4 fourth inner diameter.

Claims

1. A socket base; A probe guide; a probe pin; the socket base has a first surface and a second surface opposite to the first surface in a first direction; the socket base is provided with a first opening penetrating the socket base along the first direction, the probe guide is disposed in the first opening so as to be movable along the first direction; the probe guide has a first end that protrudes from the first surface when the probe guide is moved from the second surface side toward the first surface side along the first direction, and a second end that is an end opposite to the first end, the probe guide is provided with a second opening penetrating the probe guide along the first direction; the probe pin extends along the first direction and has a tip portion located at a third end that is an end in the first direction, The outer diameter of the tip portion decreases toward the third end, the tip portion is inserted into the second opening from the second end side so that the third end can protrude from the first end, When the tip portion contacts an external terminal of a semiconductor device, the probe guide and the probe pin are integrated.

2. 2. The test device according to claim 1, wherein a difference between an inner diameter of the first opening and an outer diameter of the probe guide is smaller than a difference between an inner diameter of the second opening and an outer diameter of the probe pin.

3. a value obtained by dividing the difference between the inner diameter of the first opening and the outer diameter of the probe guide by 2 is equal to or greater than 7.5 μm and less than 17.5 μm; 2. The testing device according to claim 1, wherein a value obtained by dividing the difference between the inner diameter of the second opening and the outer diameter of the probe pin by 2 is equal to or greater than 17.5 μm and less than 32.5 μm.

4. the probe pin further has a base end and a connection portion; the connecting portion connects the distal end portion and the proximal end portion, The testing device according to claim 1 , wherein the maximum outer diameter of the tip portion is equal to or greater than 150 μm and less than 160 μm.

5. The testing device of claim 1 , wherein the tip has a cone shape.

6. The testing device of claim 1 , wherein the third end protrudes from the first end with the third end protruding from the first surface.

7. The probe pin has a base end and a connection portion, the connecting portion connects the distal end portion and the proximal end portion, The test device according to claim 1 , wherein the connection portion comes into contact with an inner wall surface of the second opening when the central axis of the probe pin is inclined with respect to the first direction.

8. The probe pin has a base end and a connection portion, the connecting portion connects the distal end portion and the proximal end portion, the second opening has a first portion extending from the second end toward the first end and a second portion extending from the first portion to the first end, 2. The testing device according to claim 1, wherein the inner diameter of the second portion is larger than the outer diameter of the connecting portion and smaller than the maximum outer diameter of the base end portion.

9. The test apparatus according to claim 1 , wherein the probe pin and the probe guide are movable in the first direction by a distance of 450 μm or more and 500 μm or less.

10. the test apparatus includes a plurality of the probe pins; The test apparatus according to claim 1 , wherein the socket base is provided with a plurality of the first openings.

11. 2. The test apparatus according to claim 1, wherein when the probe pin moves from the first surface side toward the second surface side along the first direction, the probe guide is separated from the probe pin by restricting the movement of the probe guide from the first surface side toward the first surface side along the first direction by the first opening.

12. providing a semiconductor device having an integrated circuit and external terminals electrically connected to the integrated circuit; and providing a test device; The test device includes a socket base, a probe guide, and a probe pin; the socket base has a first surface and a second surface opposite to the first surface in a first direction, and is disposed so that the first surface faces the external terminals; the socket base is provided with a first opening penetrating the socket base along the first direction, the probe guide has a cylindrical shape extending along the first direction and is disposed within the first opening, the probe guide is provided with a second opening penetrating the probe guide along the first direction; the probe guide has a first end and a second end opposite to the first end in the first direction; the probe pin extends along the first direction and has a third end in the first direction; the probe pin has a tip portion located at the third end, The outer diameter of the tip portion decreases toward the third end, the tip portion is inserted into the second opening from the second end side so that the third end can protrude from the first end, the step of bringing the tip portion into contact with the external terminal to deform the external terminal, thereby electrically connecting the probe pin and the external terminal; When the tip portion contacts the external terminal, the probe guide is integrated with the probe pin.

13. 13. The method for manufacturing a semiconductor device according to claim 12, wherein a difference between an inner diameter of the first opening and an outer diameter of the probe guide is smaller than a difference between an inner diameter of the second opening and an outer diameter of the probe pin.

14. a value obtained by dividing the difference between the inner diameter of the first opening and the outer diameter of the probe guide by 2 is equal to or greater than 7.5 μm and less than 17.5 μm; 13. The method for manufacturing a semiconductor device according to claim 12, wherein a value obtained by dividing the difference between the inner diameter of the second opening and the outer diameter of the probe pin by 2 is equal to or greater than 17.5 [mu]m and less than 32.5 [mu]m.

15. the probe pin further has a base end and a connection portion; the connecting portion connects the distal end portion and the proximal end portion, The method for manufacturing a semiconductor device according to claim 12, wherein the maximum value of the outer diameter of the tip portion is equal to or greater than 150 μm and less than 160 μm.

16. The method for manufacturing a semiconductor device according to claim 12, wherein the tip portion has a cone shape.

17. The method for manufacturing a semiconductor device according to claim 12 , wherein the third end protrudes from the second end in a state where the third end protrudes from the first surface.

18. The probe pin has a base end and a connection portion, the connecting portion is located between the distal end portion and the proximal end portion, The method for manufacturing a semiconductor device according to claim 12 , wherein the connection portion comes into contact with an inner wall surface of the second opening when the central axis of the probe pin is inclined with respect to the first direction.

19. The probe pin has a base end and a connection portion, the connecting portion connects the distal end portion and the proximal end portion, an outer diameter of the connection portion is equal to or greater than the maximum outer diameter of the base end portion and equal to or less than the maximum outer diameter of the tip end portion; the second opening has a first portion extending from the second end toward the first end and a second portion extending from the first portion to the first end, The method for manufacturing a semiconductor device according to claim 12 , wherein an inner diameter of the second portion is larger than an outer diameter of the connection portion and smaller than a maximum value of an outer diameter of the base end portion.

20. The method for manufacturing a semiconductor device according to claim 12 , wherein the tip portion comes into contact with the external terminal with a load of 0.27 N or more and less than 0.31 N.

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