Solar cell and manufacturing method thereof

Abstract

To provide a solar cell in which electrodes can be formed through a shadow mask process instead of a photolithography process, and a method for manufacturing the same.SOLUTION: The present invention provides a solar cell and a manufacturing method thereof, the solar cell including a semiconductor substrate, a first transparent electrode layer provided on one surface of the semiconductor substrate, and a first electrode provided on one surface of the first transparent electrode layer, and the first electrode includes a first patterned layer patterned by a deposition process using a shadow mask.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a solar cell, and more particularly to an electrode for a solar cell. [Background technology]

[0002] A solar cell comprises a semiconductor layer and an electrode provided on a substrate.

[0003] For example, a conventional solar cell has an n-type semiconductor layer formed on one surface of a semiconductor substrate. a p-type semiconductor layer formed on the other surface of the substrate; Each comprises an electrode formed thereon.

[0004] Here, conventionally, the electrodes are formed by a photolithography process. The manufacturing process was complicated, which reduced productivity. Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been devised to solve the above-mentioned conventional problems, and the present invention is Electrodes can be formed through a shadow mask process instead of a photolithography process. The present invention aims to provide a solar cell that can be manufactured using the same. [Means for solving the problem]

[0006] In order to achieve the above object, the present invention provides a semiconductor substrate, a first transparent electrode layer formed on one surface of the first transparent electrode layer; and a first electrode provided on one surface of the first transparent electrode layer; The first electrode is a first patterned layer formed by a deposition process using a shadow mask. The present invention provides a solar cell comprising:

[0007] The first transparent electrode layer and the first pattern layer are made of indium (In) and The transparent oxide may comprise at least one of tin (Sn).

[0008] The first pattern layer and the first transparent electrode layer are in contact with each other, and the first pattern layer has an insulator. The content of sium may be greater than the content of indium in the first transparent electrode layer.

[0009] The first pattern layer and the first transparent electrode layer are in contact with each other, and the oxygen of the first pattern layer is The content may be less than the oxygen content of the first transparent electrode layer.

[0010] The first electrode is formed by a first seed layer and a first seed layer provided on the first pattern layer. a first metal layer disposed on the seed layer, the seed layer forming a shadow mask; The first metal layer is patterned by a deposition process using a selective deposition method without a mask. It can be patterned by a selective deposition process.

[0011] The first pattern layer, the first seed layer, and the first metal layer have the same pattern as each other. The stencil may consist of a stencil.

[0012] A first semiconductor layer and a second semiconductor layer are further provided between the semiconductor substrate and the first transparent electrode layer. The first semiconductor layer is an intrinsic amorphous silicon layer, and the second semiconductor layer is It may be made of an n-type amorphous silicon layer.

[0013] a perovskite solar cell provided between the first transparent electrode layer and the first pattern layer; The perovskite solar cell further comprises a first conductive charge transfer layer, the first conductive charge transfer layer a light absorbing layer disposed on the charge transfer layer; and a second conductive charge transfer layer disposed on the light absorbing layer. The substrate may comprise a delivery layer.

[0014] further comprising a third transparent electrode layer between the second conductive charge transfer layer and the first patterned layer; The third transparent electrode layer contains at least one of indium (In) and tin (Sn). the third transparent electrode layer and the first pattern layer are in contact with each other, the indium content of the first pattern layer is lower than the indium content of the third transparent electrode layer; the oxygen content of the first pattern layer is less than the oxygen content of the third transparent electrode layer; It is possible that this could happen.

[0015] The present invention also provides a photovoltaic device comprising a first conductive charge transport layer, a light absorbing layer disposed on the first conductive charge transport layer, and a light absorbing layer disposed on the first conductive charge transport layer. a perovskite crystal comprising a light absorbing layer, and a second conductive charge transfer layer disposed on the light absorbing layer. a solar cell, and a first electrode provided on one side of the second conductive charge transfer layer. The first electrode is a first pattern formed by a deposition process using a shadow mask. A solar cell comprising a solar cell layer is provided.

[0016] further comprising a third transparent electrode layer between the second conductive charge transfer layer and the first patterned layer; The third transparent electrode layer and the first pattern layer are made of indium (In) and tin ( The transparent oxide may comprise at least one of Sn.

[0017] The first pattern layer and the third transparent electrode layer are in contact with each other, and the first pattern layer has an insulator. the content of indium in the third transparent electrode layer is greater than the content of indium in the first pattern layer; The content of oxygen in the third transparent electrode layer may be less than the content of oxygen in the third transparent electrode layer.

[0018] The present invention also provides a method for manufacturing a semiconductor device, comprising the steps of forming a first transparent electrode layer on one surface of a semiconductor substrate, and The step of forming a first electrode on one surface of the transparent electrode layer includes forming a first electrode on the surface of the transparent electrode layer. forming a first pattern layer by a deposition process using a shadow mask; The transparent electrode layer and the first pattern layer are formed in a continuous process in the same process equipment. A method for producing a pond is provided.

[0019] The first transparent electrode layer and the first pattern layer are made of indium (In) and The transparent oxide may include at least one of tin (Sn).

[0020] forming the first transparent electrode layer and the first pattern layer in a continuous process in the same process equipment; The process involves mixing a material containing Sn, a material containing oxygen, and a material containing indium in the same chamber. The first transparent electrode layer is formed by adding the Sn-containing material and the oxygen (O)-containing material. and the indium-containing material are introduced using a shadow mask. The method may comprise forming one patterned layer.

[0021] The amount of the indium-containing material relative to the total amount of material input during the process of forming the first pattern layer The ratio of the amount of material input to the total amount of material input during the process of forming the first transparent electrode layer is The ratio of the amount of the material containing indium to the total amount of the material during the process of forming the first pattern layer is greater than the ratio of the amount of the material containing indium to the total amount of the material during the process of forming the first pattern layer. The ratio of the amount of the oxygen-containing material to the amount of the organic material is determined by the shape of the first transparent electrode layer. The ratio of the amount of oxygen-containing material to the total amount of material input during the synthesis process is smaller than the ratio. is possible.

[0022] The first transparent electrode layer and the first pattern layer are formed in a continuous process in the same process equipment. The process is carried out by putting a material containing Sn and a material containing oxygen into the same chamber to form the first transparent electrode. Then, the Sn-containing material, the oxygen (O)-containing material, and the indium (In)-containing material are formed. forming the first pattern layer using a shadow mask while introducing a material containing may comprise:

[0023] The present invention also provides a semiconductor substrate having a first conductive charge transfer layer on one side thereof, the first conductive charge transfer a light absorbing layer disposed on the layer; and a second conductive charge transfer layer disposed on the light absorbing layer. forming a perovskite solar cell comprising: forming a third transparent electrode layer on one surface of the third transparent electrode layer; and forming a first electrode on one surface of the third transparent electrode layer. The step of forming the first electrode includes a step of forming a first electrode by a deposition step using a shadow mask. forming the first pattern layer, This provides a method for manufacturing a solar cell in which the thin film layer is formed in a continuous process in the same process equipment.

[0024] The third transparent electrode layer and the first pattern layer are made of indium (In) and The transparent oxide may comprise at least one of tin (Sn).

[0025] The step of forming the first electrode includes forming the first seed layer on the first pattern layer. and forming the first metal layer on the first seed layer, The first seed layer is patterned by a deposition process using a shadow mask, and the first metal layer is Patterning can be achieved by selective deposition without any risk. [Effects of the Invention]

[0026] According to the present invention as described above, the following effects are obtained.

[0027] According to one embodiment of the present invention, a first electrode including a first pattern layer is formed on a first transparent electrode layer. By doing so, the first pattern layer is formed by a shadow mask process instead of a photolithography process. It can be formed through a simple manufacturing process, which improves productivity. .

[0028] In particular, the first transparent electrode layer and the first pattern layer are formed in a continuous process in the same process equipment. This allows for further improvement in productivity. [Brief explanation of the drawings]

[0029] [Figure 1] 1 is a cross-sectional view of a solar cell according to one embodiment of the present invention. [Figure 2] 1 is a cross-sectional view of a solar cell according to another embodiment of the present invention. [Figure 3] 10 is a cross-sectional view of a solar cell according to still another embodiment of the present invention. [Figure 4A] FIG. 4A is a cross-sectional view showing a manufacturing process of a solar cell according to an embodiment of the present invention. [Figure 4B] FIG. 4B is a cross-sectional view showing a manufacturing process of a solar cell according to an embodiment of the present invention. [Figure 4C] FIG. 4C is a cross-sectional view showing a manufacturing process of a solar cell according to an embodiment of the present invention. [Figure 4D] FIG. 4D is a cross-sectional view showing a manufacturing process of a solar cell according to an embodiment of the present invention. [Figure 5A] FIG. 5A is a cross-sectional view showing a manufacturing process of a solar cell according to another embodiment of the present invention. [Figure 5B]FIG. 5B is a cross-sectional view showing a manufacturing process of a solar cell according to another embodiment of the present invention. [Figure 5C] FIG. 5C is a cross-sectional view showing a manufacturing process of a solar cell according to another embodiment of the present invention. [Figure 5D] FIG. 5D is a cross-sectional view showing a manufacturing process of a solar cell according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0030] The advantages and features of the present invention and the manner in which they are achieved are described in detail below in conjunction with the accompanying drawings. This will be apparent from the following description of the preferred embodiments. The present invention may be embodied in many different forms and should not be construed as being limited to the embodiments set forth below. These embodiments are merely provided so that this disclosure will be complete and complete, and will not be construed as limiting the scope of the invention. The invention is provided to fully inform those skilled in the art of the scope of the invention. and the invention is defined only by the claims.

[0031] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are It is to be understood that the invention is not limited to the particulars shown in the drawings. Throughout the description of the present invention, the same reference numerals refer to the same elements. It is considered that a detailed description of the prior art may unnecessarily obscure the gist of the present invention. In such cases, detailed description thereof will be omitted. When "~ only" is used, other parts may be added unless "~ only" is used. When a component is expressed in the singular, the plural is included unless otherwise expressly stated. include.

[0032] When interpreting elements, even if there is no other explicit description, it is assumed that the margin of error is included. Interpret.

[0033] If it is a description of a positional relationship, for example, "above", "at the top", "below". When the positional relationship between two parts is explained using "beside," "immediately" or "directly" is used. One or more other portions may be located between the two portions, provided they are not used.

[0034] When explaining a time relationship, for example, "after", "following", "next to", When describing a temporal relationship, such as "before ~", "immediately" or "directly" is used. It can also include non-contiguous cases, unless otherwise specified.

[0035] Although first, second, etc. are used to describe various components, these components The term is not intended to be limiting. It should be understood that the terms simply refer to one component as a separate component from another. Therefore, the first component referred to below is The element may also be a second component within the spirit of the invention.

[0036] The features of each of the several embodiments of the present invention may be combined or combined with one another in part or in whole. Various combinations and drives are possible technically, and each embodiment corresponds to the other. They can be implemented independently or together in a linked relationship.

[0037] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0038] FIG. 1 is a cross-sectional view of a solar cell according to one embodiment of the present invention.

[0039] As can be seen from FIG. 1, the solar cell according to one embodiment of the present invention comprises a semiconductor substrate 100, a first A semiconductor layer 210, a second semiconductor layer 220, a third semiconductor layer 230, a fourth semiconductor layer 240, a first The transparent electrode layer 310, the second transparent electrode layer 320, the first electrode 410, and the second electrode 420 are included. become.

[0040] The semiconductor substrate 100 may be an N-type semiconductor wafer. One side and the other side of the 00, specifically the upper and lower sides, can be formed with a concave-convex structure. Therefore, the multiple layers stacked on one surface of the semiconductor substrate 100 and the semiconductor substrate 1 The multiple layers stacked on the other surface of the semiconductor substrate 100 have a concave-convex structure corresponding to the concave-convex structure of the semiconductor substrate 100. However, the semiconductor substrate 100 may be stacked on either one side or the other side. Alternatively, it is possible to form a concave-convex structure on only one surface of the semiconductor substrate 100. It is also possible that the uneven structure is not formed on both the other surfaces.

[0041] The first semiconductor layer 210 is formed on one surface, for example, the upper surface, of the semiconductor substrate 100 . The first semiconductor layer 210 is formed by chemical vapor deposition (CVD) or It is formed through thin film deposition processes such as atomic layer deposition (ALD). It may be an intrinsic semiconductor layer, for example an intrinsic amorphous silicon layer, provided that in some cases Therefore, the first semiconductor layer 210 contains a trace amount of dopant, for example, a trace amount of n-type dopant. doped semiconductor layer, for example, an amorphous silicon layer doped with a small amount of n-type dopant It can consist of:

[0042] The second semiconductor layer 220 is formed on one surface, for example, the upper surface, of the first semiconductor layer 210. The second semiconductor layer 220 is formed through a thin film deposition process. Alternatively, the first semiconductor layer 210 may be formed of an n-type semiconductor layer, for example, of the same polarity as the first semiconductor layer 210. The second semiconductor layer 220 may be an n-type amorphous silicon layer.

[0043] The third semiconductor layer 230 is formed on another surface, for example, the bottom surface, of the semiconductor substrate 100 . The third semiconductor layer 230 is formed through a thin film deposition process and is an intrinsic semiconductor layer, for example, an intrinsic non-conductive layer. However, in some cases, the third semiconductor layer 23 may be made of a crystalline silicon layer. 0 is an amorphous silicon layer doped with a small amount of dopant, for example, a small amount of p-type dopant Here, the polarity of the dopant doped in the third semiconductor layer 230 may be The polarity is opposite to that of the dopant doped into the first semiconductor layer 210 .

[0044] The fourth semiconductor layer 240 is formed on the other surface, for example, the lower surface, of the third semiconductor layer 230. The fourth semiconductor layer 240 is formed through a thin film deposition process and is doped with a predetermined dopant. Here, the fourth semiconductor layer 240 may be a doped semiconductor layer. The polarity of the dopant is opposite to that of the dopant doped in the second semiconductor layer 220. The fourth semiconductor layer 240 may be a p-type amorphous silicon layer.

[0045] The first transparent electrode layer 310 is formed on one surface, for example, the upper surface, of the second semiconductor layer 220. The first transparent electrode layer 310 is formed by a method such as chemical vapor deposition (CVD) or atomic layer deposition (ALD). Alternatively, the first transparent electrode may be formed by a thin film deposition process such as physical vapor deposition (PVD). The bright electrode layer 310 is a transparent oxide film containing at least one of indium and tin, e.g. It can be made of ITO or SnO2.

[0046] The second transparent electrode layer 320 is formed on the other surface, for example, the lower surface, of the fourth semiconductor layer 240. The second transparent electrode layer 320 is formed by a method such as chemical vapor deposition (CVD) or atomic layer deposition (ALD). Alternatively, it can be formed through a thin film deposition process such as physical vapor deposition (PVD). The second transparent electrode layer 320 is a transparent oxide containing at least one of indium and tin. The second transparent electrode layer 320 may be made of a metal oxide film, such as ITO or SnO2. , may be made of the same material as the first transparent electrode layer 310.

[0047] The first electrode 410 is formed on one surface, for example, the upper surface, of the first transparent electrode layer 310 . Specifically, the first electrode 410 is formed on the incident surface onto which sunlight is incident. In order to prevent the first electrode 410 from reducing the amount of incident sunlight, The first electrode 410 is patterned in a predetermined shape. The first electrode 410 has a concave-convex structure. Therefore, the first electrode 410 may have a plurality of layers stacked in a concave-convex structure. However, the first electrode 410 is not limited to this, and may have an uneven surface. It is possible that no structure is formed.

[0048] The first electrode 410 includes a first pattern layer 411, a first seed layer 412, and a first metal layer 413. 413.

[0049] The first pattern layer 411 is formed on one surface, for example, the upper surface, of the first transparent electrode layer 310. It is possible.

[0050] The first pattern layer 411 is a transparent material containing at least one of indium and tin. It can consist of an oxide film, for example ITO or SnO2.

[0051] The first pattern layer 411 can be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or is formed through a thin film deposition process such as physical vapor deposition (PVD), where shadow A pattern can be formed in the thin film deposition process using a mask. The first transparent electrode layer 310 is first formed by a thin film deposition process without a shadow mask, and then The first pattern layer 41 is formed by a thin film deposition process using the shadow mask in the same process equipment. That is, the first transparent electrode layer 310 and the first pattern layer 1 can be formed. 411 can be formed in a continuous process in the same process equipment.

[0052] Here, the indium content of the first pattern layer 411 is the same as that of the first transparent electrode layer 310. The oxygen content of the first pattern layer 411 is greater than the indium content of the first transparent electrode It may be less than the oxygen content of layer 310 .

[0053] The indium content of the first pattern layer 411 is higher than that of the first transparent electrode layer 310. The first pattern layer has a higher aluminum content than the first transparent electrode layer 310. When the oxygen content of the first pattern 411 is low, the first pattern 411 is smaller than the first transparent electrode layer 310. The electrical conductivity of the layer 411 is excellent, so that the first transparent electrode layer 310 and the 1. The contact resistance between the seed layer 412 can be reduced.

[0054] In addition, the indium content of the first transparent electrode layer 310 is higher than that of the first pattern layer 411. the indium content of the first transparent layer 411 is less than the oxygen content of the first pattern layer 411. When the oxygen content of the bright electrode layer 310 is high, the light transmittance of the first pattern layer 411 is The first transparent electrode layer 310 has excellent light transmittance, and the amount of sunlight incident on the inside of the solar cell is reduced. can be increased.

[0055] The first seed layer 412 is formed on one surface, for example, the upper surface, of the first pattern layer 411. It is possible.

[0056] The first seed layer 412 is made of a conductive material such as indium (In), tin (Sn), or titanium. It may contain at least one selected from the group consisting of talc (Ta) and zinc (Zn). can.

[0057] The first seed layer 412 can be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or It is formed through a thin film deposition process such as physical vapor deposition (PVD). The seed layer 412 is formed by depositing the first pattern layer 41 in the thin film deposition process using a shadow mask. 1. Here, the first seed layer 412 can be formed in the same pattern as the first seed layer 412. The first pattern layer 411 can be formed in a continuous process in the same process equipment. For the sake of process efficiency in the successive processes, the first seed layer 412 is included in the first pattern layer 411. The material may contain the same substance as the material contained therein, for example, indium (In) or tin (Sn). It may be preferable to

[0058] The first metal layer 413 is formed on one surface, for example, the upper surface, of the first seed layer 412. can be done.

[0059] The first metal layer 413 may be made of various metal materials known in the art, and is preferably made of The metal is selected from the group consisting of tungsten (W), aluminum (Al) and copper (Cu). It may include at least one

[0060] The first metal layer 413 can be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or is formed through a thin film deposition process such as physical vapor deposition (PVD). The metal layer 413 may be formed by the thin film deposition process using a shadow mask, or Formed by selective deposition processes known in the art without a shadow mask. The first metal layer 413 may be formed by a thin film deposition process using a shadow mask. When the first metal layer 413 is formed by the same process as the first seed layer 412, the first metal layer 413 may be formed by the same process as the first seed layer 412. The first metal layer 413 can be formed in a continuous process in the same device. It can be formed in the same pattern as 12.

[0061] In some cases, the first seed layer 412 and the first metal layer 413 may be omitted. In this case, the first electrode 410 may be made of the first pattern layer 411. can.

[0062] The second electrode 420 is formed on the other surface, for example, the lower surface, of the second transparent electrode layer 320 . The second electrode 420 is formed on the surface opposite to the incident surface on which sunlight is incident. It may also be formed on the entire lower surface of the transparent electrode layer 320. However, the first electrode 410 Similarly, the second electrode 420 is also patterned in a predetermined shape to reflect sunlight. The second transparent electrode layer 320 is configured so that the incident light can enter the inside of the solar cell. The second electrode 420 may be formed with a concave-convex structure. The multiple layers included in the second electrode 420 can be stacked in a concave-convex structure. The second electrode 420 is not limited to this, and may not have a concave-convex structure.

[0063] The second electrode 420 includes a second pattern layer 421, a second seed layer 422, and a second metal layer 423. 423.

[0064] The second pattern layer 421 is formed on the other surface, for example, the lower surface, of the second transparent electrode layer 320. It is possible.

[0065] The second pattern layer 421, like the second transparent electrode layer 320, contains indium and A transparent oxide film containing at least one of tin, such as ITO or SnO2 can be done.

[0066] The second pattern layer 421 can be formed by a method such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or formed via a thin film deposition process such as physical vapor deposition (PVD), where shadow A pattern can be formed in the thin film deposition process using a mask. The second transparent electrode layer 320 is first formed by a thin film deposition process without a shadow mask, and then The second pattern layer 42 is formed by a thin film deposition process using the shadow mask in the same process equipment. That is, the second transparent electrode layer 320 and the second pattern layer 1 can be formed. 421 can be formed in a continuous process in the same process equipment.

[0067] Here, the indium content of the second pattern layer 421 is the same as that of the second transparent electrode layer 320. The oxygen content of the second pattern layer 421 is greater than the indium content of the second transparent electrode It may be less than the oxygen content of layer 320 .

[0068] The indium content of the second pattern layer 421 is higher than that of the second transparent electrode layer 320. The second pattern layer has a higher aluminum content than the second transparent electrode layer 320. When the oxygen content of the second pattern layer 421 is low, the second pattern layer 421 has a lower oxygen content than the second transparent electrode layer 320. 21 has excellent electrical conductivity, so that the second transparent electrode layer 320 and the second seed The contact resistance between the layers 422 can be reduced.

[0069] In addition, the indium content of the second transparent electrode layer 320 is higher than that of the second pattern layer 421. the indium content of the second pattern layer 421 is lower than the oxygen content of the second pattern layer 421. When the oxygen content of the light electrode layer 320 is high, the light transmittance of the second pattern layer 421 is As a result, the second transparent electrode layer 320 has excellent light transmittance, and the sunlight incident on the inside of the solar cell is The amount of light can be increased.

[0070] The second seed layer 422 is formed on the other surface, for example, the lower surface, of the second pattern layer 421. It is possible.

[0071] The second seed layer 422 is made of a conductive material, such as indium (In), tin (Sn), or titanium. It may contain at least one selected from the group consisting of talc (Ta) and zinc (Zn). can.

[0072] The second seed layer 422 can be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or It is formed through a thin film deposition process such as physical vapor deposition (PVD). The seed layer 422 is formed by depositing the second pattern layer 42 in the thin film deposition process using a shadow mask. 1. Here, the second seed layer 422 can be formed in the same pattern as the first seed layer 422. The second pattern layer 421 can be formed in a continuous process in the same process equipment. For the sake of process efficiency in the successive processes, the second seed layer 422 is included in the second pattern layer 421. The material may contain the same substance as the material contained therein, for example, indium (In) or tin (Sn). It may be preferable to

[0073] The second metal layer 423 is formed on the other surface, for example, the lower surface, of the second seed layer 422. can be done.

[0074] The second metal layer 423 may be made of various metal materials known in the art, and is preferably made of The metal is selected from the group consisting of tungsten (W), aluminum (Al) and copper (Cu). It may include at least one

[0075] The second metal layer 423 can be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or is formed through a thin film deposition process such as physical vapor deposition (PVD). The metal layer 423 may be formed by the thin film deposition process using a shadow mask, or Formed by selective deposition processes known in the art without a shadow mask. The second metal layer 423 can be formed by the thin film deposition process using a shadow mask. When the second metal layer 423 is formed by the same process as the second seed layer 422, The second metal layer 423 can be formed in a continuous process within the device. It can be formed in the same pattern as 422.

[0076] In some cases, the second seed layer 422 and the second metal layer 423 may be omitted. In this case, the second electrode 420 may be formed from the second pattern layer 421. do.

[0077] FIG. 2 is a cross-sectional view of a solar cell according to another embodiment of the present invention.

[0078] As can be seen from FIG. 2, the solar cell according to another embodiment of the present invention has the semiconductor substrate 100 , the first semiconductor layer 210, the second semiconductor layer 220, the third semiconductor layer 230, and the fourth semiconductor layer 240 , first transparent electrode layer 310, second transparent electrode layer 320, first electrode 410, second electrode 420, and a Perovskite solar cell 500.

[0079] A solar cell according to another embodiment of the present invention shown in FIG. 2 includes a perovskite solar cell 500. 1. Therefore, the same structure as the solar cell shown in FIG. The same reference numerals are used for the same components, and only the different components will be described below. .

[0080] As can be seen from FIG. 2, according to another embodiment of the present invention, in the structure of FIG. 1 described above, A perovskite solar cell 500 is further formed between the transparent electrode layer 310 and the first electrode 410. It has been done.

[0081] Therefore, the solar cell according to another embodiment of the present invention comprises the semiconductor substrate 100, the first A semiconductor layer 210, a second semiconductor layer 220, a third semiconductor layer 230, a fourth semiconductor layer 240, a first A substrate-type solar cell including a transparent electrode layer 310 and a second transparent electrode layer 320, and a substrate-type solar cell Tandem solar cell structure including perovskite solar cells 500 formed on a pond It becomes a pond.

[0082] Here, the first transparent electrode layer 310 is a layer between the substrate type solar cell and the perovskite solar cell. It can act as a buffer layer between the cells 500, eliminating the need for a separate buffer layer. stomach.

[0083] The perovskite solar cell 500 comprises conductive charge transfer layers 520, 530 and a light absorbing layer 510.

[0084] The perovskite solar cell 500 includes one or more conductive charge transfer layers 520, 530. For example, the perovskite solar cell 500 can be formed by the first transparent electrode layer 31 a first conductive charge transfer layer 520 in contact with the first transparent electrode layer 310 on the substrate; A light absorbing layer 510 is provided on the charge transfer layer 520, and a light absorbing layer 510 is provided on the light absorbing layer 510. The present invention may comprise a second conductive charge transfer layer 530 formed thereon, although the present invention is not limited thereto. The conductive charge transfer layers 520, 530 are not limited to the light absorbing layer 510. It can also be placed on only one of the two sides.

[0085] The first conductive charge transfer layer 520 may have a different polarity from the second semiconductor layer 220, e.g. The second conductive charge transfer layer 530 is configured to have p-type polarity, and the first conductive charge transfer layer 530 is configured to have p-type polarity. It can be configured to have a different polarity than the charge transfer layer 520, for example, n-type polarity. Therefore, the first conductive charge transfer layer 520 acts as a hole transporting layer. The second conductive charge transfer layer 530 is an electron transport layer (HTL). The ETL can be composed of a encapsulating layer (ETL).

[0086] The hole transport layer may be formed of Spiro-MeO-TAD, Spiro-TTB, polyaniline, polyvinyl alcohol, or poly-3 , 4-ethylenedioxythiophene-polystyrene sulfonate (PEDOT-PSS), or poly-[ bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA), poly(3-hexylthiophene) and various P-type organic compounds known in the art, such as phenyl-2,5-diphenyl-2,5-diol (P3HT). Ni oxide, Mo oxide, V oxide, W oxide, Cu oxide, etc. Includes various P-type metal oxides known in the industry, as well as various P-type organic or inorganic materials It can also consist of a compound.

[0087] The electron transport layer is made of BCP (Bathocuproine), C60, or PCBM (Phenyl-C61-butyric acid me N-type organic materials such as thyl ester, etc. or ZnO, c-TiO2 / mp-TiO2, SnO2, or IZO. Includes various N-type metal oxides known in the industry, as well as various N-type organic or inorganic materials It can consist of a compound.

[0088] Meanwhile, the second conductive charge transfer layer 530 is the first patterned layer of the first electrode 410. In this case, the first transparent electrode layer 31 in FIG. 0 and the first pattern layer 411 are formed in the same process equipment in a continuous process. The second conductive charge transfer layer 530 and the first pattern layer 411 are continuously formed in the same process equipment. For this purpose, the second conductive charge transfer layer 530 may be formed by a process using an indium nitride. Transparent oxide film containing at least one of aluminum and tin, such as ITO or SnO2 Here, the second conductive charge transfer layer 530 may be formed by chemical vapor deposition (CVD). D) via thin film deposition processes such as atomic layer deposition (ALD) or physical vapor deposition (PVD) It is formed by

[0089] Although not shown, the second conductive charge transfer layer 530 and the first patterned layer A third transparent electrode layer is further formed between the first pattern layer 411 and the second pattern layer 412. In this case, the third transparent electrode layer may be in contact with the first transparent electrode 411. Like layer 310, the layer may be deposited by chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). It is formed through thin film deposition processes such as PVD, and contains indium and tin. The transparent oxide film may be made of at least one of ITO or SnO2. Therefore, the indium content of the first pattern layer 411 is the indium content of the first pattern layer 411 is greater than the oxygen content of the third transparent electrode layer; It may be less than the oxygen content of the light electrode layer.

[0090] The light absorbing layer 510 is made of a perovskite compound known in the art.

[0091] FIG. 3 is a cross-sectional view of a solar cell according to yet another embodiment of the present invention.

[0092] As can be seen from FIG. 3, the solar cell according to another embodiment of the present invention includes a first electrode 410, A second electrode 420, and a perovskite solar cell 500.

[0093] The solar cell according to another embodiment of the present invention shown in FIG. 3 is based on the solar cell shown in FIG. 2. The structure is that of the Perovskite solar cell 500, which is obtained by removing the flat solar cell. The first electrode 410 is formed on one surface, for example, the upper surface, of the perovskite solar cell 500. The second electrode 420 is formed on the other surface, for example, the lower surface.

[0094] Here, the first electrode 410, the second electrode 420, and the perovskite solar cell The specific configuration of the pond 500 may be the same as that shown in FIG. 2 above.

[0095] Although not shown in the figure, a third conductive charge transfer layer 530 is provided between the second conductive charge transfer layer 530 and the first patterned layer 411. A transparent electrode layer is further formed, and the third transparent electrode layer is in contact with the first pattern layer 411. In this case, the third transparent electrode layer can be formed in the same manner as the first transparent electrode layer 310 described above. , chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) and at least one of indium and tin. The transparent oxide film may be made of, for example, ITO or SnO2. The indium content of the first pattern layer 411 is greater than that of the third transparent electrode layer. The oxygen content of the first pattern layer 411 is greater than the oxygen content of the third transparent electrode layer. It may be less than the amount available.

[0096] On the other hand, in the case of FIG. 3, the second pattern layer 421 of the second electrode 420 is made of the perovskite thick film. The first conductive charge transfer layer 520 of the solar cell 500 is in contact with the first conductive charge transfer layer 520. The conductive charge transfer layer 520 is a transparent oxide film containing at least one of indium and tin, e.g. For example, when made of ITO or SnO2, the first conductive charge transfer layer 520 and the The second pattern layer 421 may not be formed in a continuous process. The conductive charge transfer layer 520 is a transparent oxide film containing at least one of indium and tin, e.g. For example, when made of ITO or SnO2, the first conductive charge transfer layer 520 and the second conductive charge transfer layer 521 are The pattern layer 421 is formed in a continuous process, where the indium of the second pattern layer 421 is the indium content of the first conductive charge transfer layer 520 is greater than the indium content of the second pattern The oxygen content of the charge transfer layer 421 is less than the oxygen content of the first conductive charge transfer layer 520. It is possible that...

[0097] 4A to 4D are cross-sectional views showing the steps of manufacturing a solar cell according to an embodiment of the present invention. This relates to the manufacturing process of the solar cell according to FIG. 1. Repetitive explanations of the same configuration will be omitted.

[0098] First, as can be seen from FIG. 4A, a first semiconductor layer is formed on one surface, for example, the upper surface, of the semiconductor substrate 100. 210, and a second semiconductor layer 220 is formed on one surface, for example, the upper surface, of the first semiconductor layer 210. Complete.

[0099] The first semiconductor layer 210 can be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or or physical vapor deposition (PVD) to form an intrinsic semiconductor layer, e.g., An amorphous silicon layer or a semiconductor layer doped with a trace amount of n-type dopant, e.g. The n-type dopant may be doped into the amorphous silicon layer.

[0100] The second semiconductor layer 220 can be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or doped with n-type dopants through thin film deposition processes such as physical vapor deposition (PVD) or The semiconductor layer may be formed of an amorphous silicon layer doped with an n-type dopant, for example. can.

[0101] Here, the first semiconductor layer 210 and the second semiconductor layer 220 are continuously formed in the same processing equipment. Specifically, a Si source material is introduced into a chamber. Chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) The first semiconductor layer 210 is formed from an intrinsic amorphous silicon layer, and then the Si source is formed. The n-type dopant material is further added to the base material and then grown by chemical vapor deposition (CVD) or atomic layer deposition. A second semiconductor consisting of an n-type amorphous silicon layer deposited by ALD or PVD. A layer 220 can be formed.

[0102] Next, as can be seen from FIG. 4B, a third semiconductor is formed on the other surface, for example, the bottom surface, of the semiconductor substrate 100. a fourth semiconductor layer 240 is formed on the other surface, for example, the lower surface, of the third semiconductor layer 230; Form.

[0103] The third semiconductor layer 230 is formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or or physical vapor deposition (PVD) or other thin film deposition processes to form an intrinsic semiconductor layer, e.g., an intrinsic non- Amorphous silicon layer or a semiconductor layer doped with a trace amount of p-type dopant, e.g., a trace amount of It may be formed of an amorphous silicon layer doped with a p-type dopant.

[0104] The fourth semiconductor layer 240 is formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or or doped with p-type dopants through thin film deposition processes such as physical vapor deposition (PVD). The semiconductor layer may be formed from an amorphous silicon layer doped with a p-type dopant, for example. can.

[0105] Here, the third semiconductor layer 230 and the fourth semiconductor layer 240 are continuously formed in the same processing equipment. Specifically, a Si source material is introduced into a chamber. Chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) The third semiconductor layer 230 is formed from an intrinsic amorphous silicon layer, and then the Si source is formed. The p-type dopant material is further added to the base material and then grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD). A fourth semiconductor consisting of a p-type amorphous silicon layer is deposited by ALD or physical vapor deposition (PVD). A body layer 240 can be formed.

[0106] On the other hand, there is no particular order between the steps of FIG. 4A and FIG. 4B. It is also possible to perform step B first and then step A in FIG. 4.

[0107] Next, as shown in FIG. 4C, a first transparent insulating film is formed on one surface, for example, the upper surface, of the second semiconductor layer 220. A transparent electrode layer 310 is formed, and a first electrode 41 is formed on one surface, for example, the upper surface, of the first transparent electrode layer 310. Form 0.

[0108] The first transparent electrode layer 310 can be formed by a method such as chemical vapor deposition (CVD), atomic layer deposition (ALD), Alternatively, at least one of indium and tin is deposited by physical vapor deposition (PVD) or the like. The transparent oxide film may be formed of, for example, ITO or SnO2.

[0109] The step of forming the first transparent electrode layer 310 is carried out by placing a material containing Sn and oxygen (O) in a chamber. It may also comprise a step of forming ITO by introducing a material containing indium or a material containing indium. A material containing Sn and a material containing oxygen (O) are introduced into the chamber to form SnO2. The method may also comprise the steps of:

[0110] The step of forming the first electrode 410 includes the step of forming a first pattern layer 411, forming a first seed layer 412 on the top surface of the first pattern layer 411; The method may include forming the first metal layer 413 on the upper surface of the metal layer 412.

[0111] The first pattern layer 411 is formed by chemical vapor deposition (CVD) using a shadow mask, Indium and tin are deposited using atomic layer deposition (ALD) or physical vapor deposition (PVD). The transparent oxide film may be formed of a transparent oxide film containing at least one of the above.

[0112] The step of forming the first pattern layer 411 is carried out by placing a material containing Sn and oxygen (O) in a chamber. The method may also include a step of forming ITO by adding a material containing indium or a material containing indium. A material containing Sn and a material containing oxygen (O) are introduced into the chamber to form SnO2. The method may also comprise the steps of:

[0113] Here, the first pattern layer 411 and the first transparent electrode layer 310 are formed in the same processing equipment. For example, a material containing Sn and an oxygen-containing material can be formed in the same chamber. (O) containing material and indium containing material are introduced, and chemical vapor deposition (CVD) and atomic The first transparent electrode layer 310 is formed by layer deposition (ALD) or physical vapor deposition (PVD). Then, the Sn-containing material, the oxygen (O)-containing material, and the indium are The first transparent electrode layer 310 contains a material containing oxygen (O) at a content different from that of the first transparent electrode layer 310. A chemical vapor deposition method is performed using a shadow mask while introducing a material containing indium and a material containing indium. Deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) One patterned layer 411 can be formed.

[0114] As another example, a material containing Sn and a material containing oxygen (O) are placed in the same chamber. Chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (P VD) to form the first transparent electrode layer 310, followed by the Sn-containing material, the oxygen ( While introducing a material containing O and a material containing indium, a shadow mask is used to chemically Chemical Vapor Deposition (CVD), Atomic Layer Deposition (ALD), or Physical Vapor Deposition (PVD) The first pattern layer 411 can also be formed by using a metal oxide film.

[0115] The amount of indium relative to the total amount of material used in the process of forming the first pattern layer 411 is The ratio of the amount of the material to be added is the total amount of the material to be added in the process of forming the first transparent electrode layer 310. the ratio of the amount of the indium-containing material to the amount of the first pattern layer 41 is greater than the ratio of the amount of the indium-containing material to the amount of the first pattern layer 41 The ratio of the amount of oxygen (O)-containing material to the amount of all materials added during the formation process of 1 is The oxygen (O) content relative to the total amount of materials used in the process of forming the first transparent electrode layer 310 is The ratio of the amount of the material to be added may be smaller than the ratio of the amount of the material to be added. The indium content of the first pattern layer 411 is higher than that of the first pattern layer 310. The oxygen content of the first pattern layer 411 is greater than the oxygen content of the first transparent electrode layer 310. As a result, the electrical conductivity of the first pattern layer 411 can be increased.

[0116] The first seed layer 412 is formed by chemical vapor deposition (CVD) using a shadow mask, atomic Conductive materials, such as indium, are deposited by layer deposition (ALD) or physical vapor deposition (PVD). Selected from the group consisting of inium (In), tin (Sn), tantalum (Ta) and zinc (Zn) The material may be formed by adding at least one of the above.

[0117] Here, the first seed layer 412 is formed in the same process equipment as the first pattern layer 411. It can be formed in a continuous process using a shadow mask.

[0118] The first metal layer 413 can be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or is formed through a thin film deposition process such as physical vapor deposition (PVD). The metal layer 413 can also be formed by the thin film deposition process using a shadow mask. The film was deposited without a shadow mask by a selective deposition process known in the art. The first metal layer 413 can be formed by thin film deposition using a shadow mask. When the first metal layer 413 is formed by the same process as the first seed layer 412, The process can be performed in a continuous process in a process equipment.

[0119] The first metal layer 413 may be made of various metal materials known in the art, and is preferably made of The metal is selected from the group consisting of tungsten (W), aluminum (Al) and copper (Cu). It may include at least one

[0120] Next, as shown in FIG. 4D, a second transparent electrode is formed on the other surface, for example, the lower surface, of the fourth semiconductor layer 240. A transparent electrode layer 320 is formed, and a second electrode 42 is formed on the other surface, for example, the lower surface, of the second transparent electrode layer 320. Form 0.

[0121] The second transparent electrode layer 320 can be formed by a method such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or by physical vapor deposition (PVD) containing at least one of indium and tin. The transparent oxide film may be formed of, for example, ITO or SnO2.

[0122] The process of forming the second transparent electrode layer 320 is carried out by placing a material containing Sn and oxygen (O) in a chamber. and a material containing indium to form ITO. It is also possible to put a material containing Sn and a material containing oxygen (O) into the chamber and produce SnO2 It may also comprise the step of forming

[0123] The step of forming the second electrode 420 is the step of forming the second pattern layer 421. forming a second seed layer 422 on the lower surface of the second pattern layer 421; The method may include forming a second metal layer 423 on the underside of layer 422.

[0124] The second pattern layer 421 is formed by chemical vapor deposition (CVD) using a shadow mask, Indium and tin are deposited by layer-by-layer deposition (ALD) or physical vapor deposition (PVD). The transparent oxide film may be formed of a transparent oxide film containing at least one of the above.

[0125] The process of forming the second pattern layer 421 is carried out by placing a material containing Sn and oxygen (O) in a chamber. The method may also include a step of forming ITO by adding a material containing indium or a material containing indium. A material containing Sn and a material containing oxygen (O) are placed in the chamber to form SnO2. The method may also comprise the step of:

[0126] Here, the second pattern layer 421 and the second transparent electrode layer 320 are formed in the same process equipment. For example, a material containing Sn and an oxygen-containing material can be formed in the same chamber. A material containing (O) and a material containing indium are introduced and subjected to chemical vapor deposition (CVD). , atomic layer deposition (ALD), or physical vapor deposition (PVD) to form a second transparent electrode layer. 320, followed by the Sn-containing material, the oxygen (O)-containing material, and the in The second transparent electrode layer 320 is provided with a material containing oxygen ( O) and the indium-containing material are introduced using a shadow mask. Chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) 4. The second pattern layer 421 can be formed using the same.

[0127] As another example, a material containing Sn and a material containing oxygen (O) are placed in the same chamber. Chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (P The second transparent electrode layer 320 is formed using the Sn-containing material, the oxygen-containing material, and the Sn-containing material. While introducing a material containing (O) and a material containing indium, a shadow mask is used to Chemical Vapor Deposition (CVD), Atomic Layer Deposition (ALD), or Physical Vapor Deposition (PVD) It can also be used to form the second pattern layer 421.

[0128] The amount of indium relative to the total amount of material used in the process of forming the second pattern layer 421 is The ratio of the amount of the material to be added is the total amount of the material to be added during the process of forming the second transparent electrode layer 320. the ratio of the amount of the indium-containing material to the amount of the second pattern layer 42 The ratio of the amount of oxygen (O)-containing material to the amount of all materials added during the formation process of 1 is The oxygen (O) content relative to the total amount of materials used in the process of forming the second transparent electrode layer 320 is The ratio of the amount of the material to be added may be smaller than the ratio of the amount of the material to be added. The indium content of the second pattern layer 421 is greater than the indium content of 20; The oxygen content of the second pattern layer 421 is smaller than the oxygen content of the second transparent electrode layer 320. As a result, the electrical conductivity of the second pattern layer 421 can be increased.

[0129] The second seed layer 422 is formed by chemical vapor deposition (CVD) using a shadow mask, atomic Conductive materials, such as indium, using layer deposition (ALD) or physical vapor deposition (PVD) selected from the group consisting of aluminum (In), tin (Sn), tantalum (Ta) and zinc (Zn). The material may be formed by adding at least one of the above.

[0130] Here, the second seed layer 422 is formed in the same process equipment as the second pattern layer 421. It can be formed in a continuous process using a shadow mask.

[0131] The second metal layer 423 can be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or is formed through a thin film deposition process such as physical vapor deposition (PVD). The metal layer 423 can also be formed by the thin film deposition process using a shadow mask. is formed without a shadow mask by a selective deposition process known in the art. The second metal layer 423 can be formed by the thin film deposition using a shadow mask. When the second metal layer 423 is formed by the same process as the second seed layer 422, The process can be performed in a continuous process in a process equipment.

[0132] The second metal layer 423 may be made of various metal materials known in the art, and is preferably made of The metal is selected from the group consisting of tungsten (W), aluminum (Al) and copper (Cu). It may include at least one

[0133] On the other hand, there is no particular order between the process shown in FIG. 4C and the process shown in FIG. 4D. Alternatively, step D may be performed first, followed by step C of FIG. 4.

[0134] In some cases, the step of FIG. 4A is followed by the step of FIG. 4C, and then the steps of FIG. 4B and FIG. 4D are performed. It is also possible to carry out these steps consecutively.

[0135] 5A to 5D are cross-sectional views showing the steps of manufacturing a solar cell according to another embodiment of the present invention. This relates to the manufacturing process of the solar cell according to FIG. 2 described above.

[0136] First, as can be seen from FIG. 5A, a first semiconductor layer is formed on one surface, for example, the upper surface, of the semiconductor substrate 100. 210, and a second semiconductor layer 220 is formed on one surface, for example, the upper surface, of the first semiconductor layer 210. A first transparent electrode layer 310 is formed on one surface, for example, the upper surface, of the second semiconductor layer 220. The first conductive layer 310 is formed on one surface, for example, the upper surface, of the first transparent electrode layer 310. A conductive charge transfer layer 520 is formed on one side, for example, the upper side, of the first conductive charge transfer layer 520. The absorbing layer 510 is formed.

[0137] The step of forming the first semiconductor layer 210, the step of forming the second semiconductor layer 220, The process for forming the bright electrode layer 310 is the same as that described above, and therefore, a repeated description will be omitted. do.

[0138] The first conductive charge transfer layer 520 is formed by a thin film deposition method such as evaporation. It can also consist of a process of forming an organic hole transport layer (HTL) through a film deposition process. and can be deposited by chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (P A hole transport layer (HTL) made of inorganic material is formed through a thin film deposition process such as VD. The method may also comprise the steps of:

[0139] The light absorbing layer 510 may be formed by a thin film process such as a solution process or a chemical vapor deposition (CVD) method. The method may comprise forming a perovskite compound through a film deposition process.

[0140] Next, as can be seen from FIG. 5B, the light absorbing layer 510 of the perovskite solar cell 500 forming a second conductive charge transfer layer 530 on one surface, for example, the upper surface, of the second conductive charge transfer layer 530; The first electrode 410 is formed on one surface, for example the top surface, of the layer 530 .

[0141] The process of forming the second conductive charge transfer layer 530 may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or the like. inorganic materials through thin film deposition processes such as ALD (atomic layer deposition) or physical vapor deposition (PVD) an electron transport layer (ETL) comprising at least one of indium and tin; This can consist of forming a transparent oxide film, such as ITO or SnO2.

[0142] The step of forming the first electrode 410 includes a step of forming a first pattern layer 411, forming a first seed layer 412 on the upper surface of the turn layer 411; forming a first metal layer 413 on the top surface of the first metal layer 412, each of which The first patterned layer 411 is the same as that described above, except that the second conductive charge-transfer layer Since the first pattern layer 411 is formed to contact the second conductive layer 530, The charge transfer layer 530 can be formed in the same process equipment in a continuous process.

[0143] Although not shown, the second conductive charge transfer layer 530 and the first patterned layer A third transparent electrode layer is further formed between the first pattern 411 and the second pattern 412. In this case, the third transparent electrode layer can be in contact with the first transparent electrode layer 411. As with the electrode layer 310, the electrode layer 310 may be deposited by chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical deposition. It is formed through a thin film deposition process such as physical vapor deposition (PVD) and contains indium and tin. The transparent oxide film may be made of at least one of ITO or SnO2. Therefore, the indium content of the first pattern layer 411 is The indium content of the first pattern layer 411 is greater than the indium content of the light electrode layer. The oxygen content of the first pattern layer 411 may be less than that of the third transparent electrode layer. The second transparent electrode layer can be formed in the same process equipment as the third transparent electrode layer in a continuous process.

[0144] Next, as can be seen from FIG. 5C, a third semiconductor is formed on the other surface, for example, the bottom surface, of the semiconductor substrate 100. a fourth semiconductor layer 240 is formed on the other surface, for example, the lower surface, of the third semiconductor layer 230; Form.

[0145] The process of forming the third semiconductor layer 230 and the process of forming the fourth semiconductor layer 240 are the same as those described above. Therefore, a repeated explanation will be omitted.

[0146] Next, as shown in FIG. 5D, a second transparent electrode is formed on the other surface, for example, the lower surface, of the fourth semiconductor layer 240. A transparent electrode layer 320 is formed, and a second electrode 42 is formed on the other surface, for example, the lower surface, of the second transparent electrode layer 320. Form 0.

[0147] The process of forming the second transparent electrode layer 320 and the process of forming the second electrode 420 are the same as those described above. Since they are similar, repeated explanations will be omitted.

[0148] On the other hand, although not shown in the figure, first, a first semiconductor layer 210 and a second semiconductor layer 211 are formed on the upper surface of the semiconductor substrate 100. Then, a second semiconductor layer 220 is formed on the lower surface of the semiconductor substrate 100. The first semiconductor layer 30 and the fourth semiconductor layer 240 are formed in this order, and then the first semiconductor layer 30 and the fourth semiconductor layer 240 are formed on the upper surface of the second semiconductor layer 220. The transparent electrode layer 310 and the first electrode 410 are formed in this order. It is also possible to form the second transparent electrode layer 320 and the second electrode 420 in this order on the lower surface. In this case, the structure formed on the lower surface of the semiconductor substrate 100 is It is also possible to form the structure before the structure formed in the first place.

[0149] Although the embodiments of the present invention have been described in detail above with reference to the accompanying drawings, the present invention is not necessarily limited to the above. However, the present invention is not limited to these examples, and the scope of the present invention is not limited to these examples. Therefore, the disclosed embodiments of the present invention may be modified in various ways. It is not intended to limit the technical idea of ​​the invention but to explain it. The scope of the technical concept of the present invention is not limited to the examples. It should be understood that the described embodiments are illustrative in all respects and not restrictive. The scope of protection of the present invention should be interpreted by the claims, All technical ideas within the scope equivalent to the above are considered to be included in the scope of the present invention. It must be.

Claims

1. semiconductor substrate, a first transparent electrode layer provided on one surface of the semiconductor substrate; and a first electrode provided on one surface of the first transparent electrode layer; The first electrode is a first pattern formed by a deposition process using a shadow mask. A solar cell comprising a layer.

2. The first transparent electrode layer and the first pattern layer are made of indium (In) and tin, respectively.

10. The solar cell of claim 1, comprising a transparent oxide containing at least one of (Sn). pond.

3. The first pattern layer and the first transparent electrode layer are in contact with each other, and the first pattern layer has an insulator.

3. The transparent electrode layer according to claim 2, wherein the content of smectin is greater than the content of indium in the first transparent electrode layer. Solar cell.

4. The first pattern layer and the first transparent electrode layer are in contact with each other, and the oxygen of the first pattern layer is The solar cell according to claim 2 , wherein the content is less than the oxygen content of the first transparent electrode layer.

5. The first electrode includes a first seed layer provided on the first pattern layer, and the first seed layer is formed on the first pattern layer. a first metal layer disposed on the metal layer; The first seed layer is patterned by a deposition process using a shadow mask, and the first The metal layer is patterned by a selective deposition process. The solar cell described.

6. The first pattern layer, the first seed layer, and the first metal layer have the same pattern. The solar cell according to claim 5 , comprising:

7. A first semiconductor layer and a second semiconductor layer are further provided between the semiconductor substrate and the first transparent electrode layer. It is equipped, the first semiconductor layer is made of an intrinsic amorphous silicon layer, The solar cell according to claim 1 , wherein the second semiconductor layer is made of an n-type amorphous silicon layer.

8. a perovskite solar cell provided between the first transparent electrode layer and the first pattern layer; It further comprises: The perovskite solar cell comprises a first conductive charge transfer layer, a first conductive charge transfer layer a light absorbing layer disposed on the substrate; and a second conductive charge transfer layer disposed on the light absorbing layer. The solar cell according to claim 1 ,

9. a third transparent electrode layer between the second conductive charge transport layer and the first patterned layer; The third transparent electrode layer contains at least one of indium (In) and tin (Sn). A transparent oxide containing The third transparent electrode layer and the first pattern layer are in contact with each other, and the first pattern layer has an insulator. the content of indium in the third transparent electrode layer is greater than the content of indium in the first pattern layer; 9. The solar cell according to claim 8, wherein the oxygen content of said third transparent electrode layer is less than the oxygen content of said third transparent electrode layer. battery

10. a first conductive charge transport layer; a light absorbing layer disposed on the first conductive charge transport layer; and a perovskite solar cell comprising a second conductive charge transfer layer disposed on the light absorbing layer; and a first electrode disposed on one side of the second conductive charge transport layer; The first electrode is a first pattern formed by a deposition process using a shadow mask. A solar cell comprising a layer.

11. a third transparent electrode layer between the second conductive charge transfer layer and the first patterned layer; The third transparent electrode layer and the first patterned layer are made of indium (In) and tin, respectively.

11. The solar cell of claim 10, comprising a transparent oxide containing at least one of (Sn). battery.

12. The first pattern layer and the third transparent electrode layer are in contact with each other, and the first pattern layer has an insulator. The content of indium in the third transparent electrode layer is greater than the content of indium in the first pattern layer. The solar cell according to claim 11, wherein the content of oxygen in the third transparent electrode layer is less than the content of oxygen in the third transparent electrode layer. pond

13. forming a first transparent electrode layer on one side of a semiconductor substrate; forming a first electrode on one surface of the first transparent electrode layer; The step of forming the first electrode includes forming a first pattern layer by a deposition process using a shadow mask. forming a The first transparent electrode layer and the first pattern layer are formed in a continuous process in the same process equipment. A method for manufacturing a solar cell.

14. The first transparent electrode layer and the first pattern layer are made of indium (In) and tin, respectively.

14. The solar cell of claim 13, comprising a transparent oxide containing at least one of (Sn). How batteries are manufactured.

15. The first transparent electrode layer and the first pattern layer are formed in a continuous process in the same process equipment. The process is as follows: A material containing Sn, a material containing oxygen, and a material containing indium were placed in the same chamber. The first transparent electrode layer is formed by adding the Sn-containing material and the oxygen (O)-containing material. and the indium-containing material are introduced by using the shadow mask.

15. The method for manufacturing a solar cell according to claim 14, further comprising forming the first patterned layer. 。

16. The amount of the indium-containing material relative to the total amount of material input during the process of forming the first pattern layer is The ratio of the amount of material input to the total amount of material input during the process of forming the first transparent electrode layer is greater than the input ratio of indium-containing materials, The amount of the oxygen-containing material relative to the total amount of material input during the process of forming the first pattern layer is The ratio of the amount of oxygen to the amount of all materials input during the process of forming the first transparent electrode layer is The method for manufacturing a solar cell according to claim 15, wherein the ratio of the amount of the material to be added is smaller than the ratio of the amount of the material to be added.

17. The first transparent electrode layer and the first pattern layer are formed in a continuous process in the same process equipment. The process is as follows: A material containing Sn and a material containing oxygen are placed in the same chamber to form the first transparent electrode. a layer, followed by the Sn-containing material, the oxygen (O)-containing material, and indium forming the first pattern layer using the shadow mask while introducing a material containing The method for producing a solar cell according to claim 14, comprising the steps of:

18. a first conductive charge transfer layer on one side of a semiconductor substrate; a photoabsorption layer having a second conductive charge transport layer disposed on the photoabsorption layer; forming a skite solar cell; forming a third transparent electrode layer on one side of the second conductive charge transport layer; and forming a first electrode on one surface of the third transparent electrode layer; The step of forming the first electrode includes forming a first pattern layer by a deposition process using a shadow mask. forming a The third transparent electrode layer and the first pattern layer are formed in a continuous process in the same process equipment. A method for manufacturing solar cells.

19. The third transparent electrode layer and the first patterned layer are made of indium (In) and tin, respectively.

19. The solar cell of claim 18, comprising a transparent oxide containing at least one of (Sn). How batteries are manufactured.

20. The step of forming the first electrode includes forming a first seed layer on the first pattern layer. and forming a first metal layer on the first seed layer; The first seed layer is patterned by a deposition process using a shadow mask; The first metal layer is patterned by a selective deposition process. The method for producing a solar cell according to claim 13.

Images