Manufacturing method of semiconductor device

Abstract

To provide a technique capable of suppressing an insulating substrate from being fixed in an inclined state with respect to a bottom surface of a case and maintaining parallelism between the bottom surface of the case and the insulating substrate.SOLUTION: A manufacturing method of a semiconductor device 100, includes: a mounting step of mounting an insulating substrate 1 on a case mounting jig 30; a coating step of coating a hot melt adhesive 7 having a film thickness of L1 on an upper surface of a peripheral part of the insulating substrate 1 and then coating a thermosetting adhesive 8 having a film thickness of L2 on the upper surface of the peripheral part of the insulating substrate 1 around a region coated with the hot melt adhesive 7; a temporary fixing step of temporarily fixing the insulating substrate 1 and a case 4 by screwing the case 4 and the case mounting jig 30 together after the case 4 is disposed so that a groove 4a is located in the peripheral part of the insulating substrate 1; and a heating step of fixing the insulating substrate 1 and the case 4 by heating the temporarily fixed insulating substrate 1 and the case 4. In the temporary fixing step, L1>L2, and in the heating step, L1=L2.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a method for manufacturing a semiconductor device. [Background technology]

[0002] In a conventional semiconductor device manufacturing process, a case is fixed to an insulating substrate placed on a case attachment jig with an adhesive. When the insulating substrate and case are temporarily attached, the case and case attachment jig are fastened together. However, when fastening the case and case attachment jig, a bending force that causes warping of the insulating substrate is applied, which can cause cracks in the insulating layer of the insulating substrate.

[0003] In order to control the warping of the insulating substrate, there is a power semiconductor device in which protruding spacers having rubber elasticity are dispersed and inserted on the upper surface of the peripheral edge of the insulating substrate, thereby making it possible to ensure a predetermined thickness of adhesive in the bonding process in which the insulating substrate is assembled into the case (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-133769 Summary of the Invention [Problem to be solved by the invention]

[0005] However, with the technology described in Patent Document 1, when the case was attached, the insulating substrate was sometimes fixed in an inclined state relative to the bottom surface of the case due to dimensional variations in each component, which led to problems such as cracking of the insulating substrate when joining the product to the cooling component, or reduced thermal resistance due to insufficient contact between the product and the cooling component.

[0006] Therefore, an object of the present disclosure is to provide a technology that can prevent the insulating substrate from being fixed in an inclined state relative to the bottom surface of the case and maintain parallelism between the bottom surface of the case and the insulating substrate. [Means for solving the problem]

[0007] The method for manufacturing a semiconductor device according to the present disclosure is a method for manufacturing a semiconductor device including an insulating substrate and a case having a groove on its bottom surface that is fixed to the peripheral edge of the insulating substrate, and includes the steps of: placing the insulating substrate on a case attachment jig; applying a hot melt adhesive having a thickness of L1 to the upper surface of the peripheral edge of the insulating substrate, and then applying a thermosetting adhesive having a thickness of L2 around the area on the upper surface of the peripheral edge of the insulating substrate where the hot melt adhesive has been applied; positioning the case so that the groove is located on the peripheral edge of the insulating substrate, and then temporarily fixing the insulating substrate and the case by screwing the case and the case attachment jig together; and heating the temporarily fixed insulating substrate and case to fix the insulating substrate and the case together, wherein L1 > L2 during the temporary fixing step, and L1 = L2 during the heating step. [Effects of the Invention]

[0008] According to the present disclosure, it is possible to prevent the insulating substrate from being fixed in a tilted state relative to the bottom surface of the case, and to maintain parallelism between the bottom surface of the case and the insulating substrate. [Brief explanation of the drawings]

[0009] [Figure 1] 2A to 2C are cross-sectional views showing a method for manufacturing the semiconductor device according to the first embodiment. [Figure 2] 2A to 2C are cross-sectional views showing a method for manufacturing the semiconductor device according to the first embodiment. [Figure 3] 2A to 2C are cross-sectional views showing a method for manufacturing the semiconductor device according to the first embodiment. [Figure 4] 2A to 2C are cross-sectional views showing a method for manufacturing the semiconductor device according to the first embodiment. [Figure 5] 3 is a flowchart showing a method for manufacturing the semiconductor device according to the first embodiment. [Figure 6]FIG. 1 is a diagram showing the temperature profiles of a hot melt adhesive and a thermosetting adhesive. [Figure 7] 10 is a cross-sectional view showing a method for manufacturing a semiconductor device when there is variation in the film thickness L1 of the hot melt adhesive. FIG. [Figure 8] 10 is a cross-sectional view showing a method for manufacturing a semiconductor device when there is variation in the film thickness L1 of the hot melt adhesive. FIG. [Figure 9] 10 is a cross-sectional view showing a method for manufacturing a semiconductor device when there is variation in the film thickness L1 of the hot melt adhesive. FIG. [Figure 10] 10A to 10C are cross-sectional views showing a method for manufacturing a semiconductor device according to a second embodiment. [Figure 11] FIG. 11 is a top view of the insulating substrate after the coating step in the third embodiment. [Figure 12] FIG. 11 is a top view of the insulating substrate after the coating step in the fourth embodiment. [Figure 13] FIG. 13 is a side view of the insulating substrate after the coating step in the fifth embodiment. [Figure 14] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to a related art. [Figure 15] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to a related art. [Figure 16] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to a related art. [Figure 17] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to a related art. DETAILED DESCRIPTION OF THE INVENTION

[0010] <First Embodiment> The first embodiment will be described below with reference to the drawings. Figures 1 to 4 are cross-sectional views showing a method for manufacturing a semiconductor device 100 according to the first embodiment.

[0011] First, a description will be given of a semiconductor device 100, which is a product manufactured by a manufacturing method described below. As shown in Fig. 4, the semiconductor device 100 is a power module, and includes an insulating substrate 1, a plurality of semiconductor elements 2, a case 4, and a plurality of terminals 5.

[0012] The insulating substrate 1 is formed in a quadrangular shape when viewed from above, and includes an insulating layer 1a and circuit patterns 1b and 1c. The insulating layer 1a is made primarily of, for example, ceramic. A conductive circuit pattern 1b is provided on the upper surface of the insulating layer 1a. A conductive circuit pattern 1c is provided on the lower surface of the insulating layer 1a. The circuit patterns 1b and 1c are made primarily of, for example, copper.

[0013] The semiconductor element 2 is mounted on the upper surface of the circuit pattern 1b of the insulating substrate 1 via solder 3. The semiconductor material of the semiconductor element 2 is a wide bandgap semiconductor such as silicon or silicon carbide. The semiconductor element 2 is a power semiconductor element such as an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), a free wheeling diode (FwDi), or a reverse conducting IGBT (RC-IGBT).

[0014] The case 4 is formed in a rectangular shape when viewed from above, and is fixed to the upper surface of the peripheral edge of the insulating substrate 1 so as to enclose multiple semiconductor elements 2. The portion of the case 4 other than the peripheral edge bulges upward, and the peripheral edge extends toward the outer periphery. The peripheral edge of the case 4 is provided with multiple bushings 6 into which screws 9 are fastened when attaching the semiconductor device 100 to a heat dissipation member (not shown) or a case attachment jig 30. A groove 4a is formed in the bottom surface of the case 4, more specifically, in the inner peripheral portion of the bottom surface at the peripheral edge of the case 4. The groove 4a is formed over the entire inner peripheral portion of the bottom surface at the peripheral edge of the case 4.

[0015] One end of each of the plurality of terminals 5 is joined to the circuit pattern 1 b, and the other end of each of the plurality of terminals 5 is exposed from the upper surface of the case 4.

[0016] The case 4 is fixed to the insulating substrate 1 by a hot melt adhesive 7 and a thermosetting adhesive 8 applied to the upper surface of the peripheral portion of the insulating substrate 1, more specifically, to the upper surface of the peripheral portion of the insulating layer 1a of the insulating substrate 1.

[0017] Next, a method for manufacturing the semiconductor device 100 will be described with reference to Figures 1 to 5. Figure 5 is a flowchart showing a method for manufacturing the semiconductor device 100 according to the first embodiment.

[0018] First, as shown in FIG. 5, in a placing step, the insulating substrate 1 is placed on the case attaching jig 30 (step S1).

[0019] Next, in the coating step, after coating the upper surface of the peripheral edge of the insulating substrate 1 with a hot melt adhesive 7 having a thickness of L1, a thermosetting adhesive 8 having a thickness of L2 is coated around the area on the upper surface of the peripheral edge of the insulating substrate 1 where the hot melt adhesive 7 has been coated (step S2). At this time, L1>L2.

[0020] 1, the case 4 is placed so that the groove 4a is positioned on the periphery of the insulating substrate 1. At this time, due to dimensional variations in the members constituting the insulating substrate 1, the insulating substrate 1 is placed in an inclined state with respect to the top surface of the case attachment jig 30 and also in an inclined state with respect to the bottom surface of the case 4.

[0021] 2 and 5, in the temporary fixing step, while maintaining the parallelism between the bottom surface of the case 4 and the insulating substrate 1, the case 4 is positioned so that the groove 4a is located on the peripheral edge of the insulating substrate 1, and then the case 4 and the case attachment jig 30 are screwed together to temporarily fix the insulating substrate 1 and the case 4 (step S3). At this time, a downward load is generated on the hot melt adhesive 7 due to the tightening stress, but the hot melt adhesive 7 maintains its shape because it has hardened. The tightening stress also deforms the portion of the case 4 that bulges upward.

[0022] 3 and 5, in a heating process, the temporarily fixed insulating substrate 1 and case 4 are heated to fix the insulating substrate 1 and case 4 together (step S4). In the heating process, the hot melt adhesive 7 melts, and the film thickness L1 of the hot melt adhesive 7 is reduced by the downward load. The area of ​​the case 4 that is in contact with the hot melt adhesive 7 deforms downward, and at this time the thermosetting adhesive 8 hardens, so that L1 = L2. As a result, the parallelism between the bottom surface of the case 4 and the insulating substrate 1 can be maintained, and the insulating substrate 1 and the adhesive (hot melt adhesive 7 and thermosetting adhesive 8) are in contact evenly, preventing the concentration of tightening stress.

[0023] Next, as shown in FIGS. 4 and 5, a removal step is carried out in which the screws 9 are loosened to remove the semiconductor device 100 from the case attachment jig 30 (step S5).

[0024] FIG. 6 is a diagram showing the temperature profiles of the hot melt adhesive 7 and the thermosetting adhesive 8. In FIG. 6, before time A when the hot melt adhesive 7 reaches its melting temperature T1, the hot melt adhesive 7 is cured, and the thermosetting adhesive 8 is melted. From time A to time B when the thermosetting adhesive 8 reaches its curing start temperature T2, the hot melt adhesive 7 and the thermosetting adhesive 8 are melted. From time B to time C when the hot melt adhesive 7 reaches its melting temperature T1, the hot melt adhesive 7 is melted, and the thermosetting adhesive 8 is cured. After time C, the hot melt adhesive 7 and the thermosetting adhesive 8 are cured.

[0025] As shown in Figure 6, by setting the melting temperature T1 of the hot melt adhesive 7 to a temperature lower than the hardening start temperature T2 of the thermosetting adhesive 8, the thermosetting adhesive 8 is hardened after the hot melt adhesive 7 melts, thereby adjusting the film thickness of the adhesive (hot melt adhesive 7 and thermosetting adhesive 8).

[0026] Next, the effects of the first embodiment will be described in comparison with the related art. Figures 14 to 17 are cross-sectional views showing a method for manufacturing a semiconductor device 101 according to the related art.

[0027] 14, in the related art, after placing insulating substrate 1 on case attachment jig 30, spacers 17 having rubber elasticity are dispersedly inserted on the upper surface of the peripheral edge of insulating substrate 1 and adhesive 18 is applied to control warpage of insulating substrate 1. Adhesive 18 is a thermosetting adhesive.

[0028] Next, the case 4 is placed so that the groove 4a is positioned on the peripheral edge of the insulating substrate 1. At this time, due to dimensional variations in the members constituting the insulating substrate 1, the insulating substrate 1 is placed in an inclined state with respect to the top surface of the case attachment jig 30 and also in an inclined state with respect to the bottom surface of the case 4.

[0029] 15, while maintaining the parallelism between the bottom surface of case 4 and insulating substrate 1, case 4 is positioned so that groove 4a is located on the peripheral edge of insulating substrate 1, and then case 4 is temporarily fixed to insulating substrate 1 by screwing case 4 and case attachment jig 30 together. At this time, a downward load is generated in adhesive 18 due to tightening stress, and because adhesive 18 is not yet hardened, it deforms together with spacer 17. The tightening stress also deforms the portion of case 4 that bulges upward.

[0030] 16, the temporarily fixed insulating substrate 1 and case 4 are heated to fix the insulating substrate 1 and case 4 together, but because the insulating substrate 1 and case 4 are heated in a state in which the spacer 17 is deformed, the insulating substrate 1 and case 4 are fixed together in a state in which the insulating substrate 1 is tilted relative to the bottom surface of the case 4. In such a case, the parallelism between the bottom surface of the case 4 and the insulating substrate 1 cannot be maintained.

[0031] In contrast, in the first embodiment, the manufacturing method of semiconductor device 100 includes a placing step of placing insulating substrate 1 on case attachment jig 30, an application step of applying hot melt adhesive 7 with a thickness of L1 to the upper surface of the peripheral edge of insulating substrate 1, and then applying thermosetting adhesive 8 with a thickness of L2 around the area on the upper surface of the peripheral edge of insulating substrate 1 where hot melt adhesive 7 has been applied, a temporary fixing step of positioning case 4 so that groove 4a is located on the peripheral edge of insulating substrate 1, and then temporarily fixing insulating substrate 1 and case 4 by screwing case 4 to case attachment jig 30, and a heating step of heating the temporarily fixed insulating substrate 1 and case 4 to fix insulating substrate 1 and case 4. During the temporary fixing step, L1 > L2, and during the heating step, L1 = L2.

[0032] This prevents the insulating substrate 1 from being fixed at an angle relative to the bottom surface of the case 4, and maintains parallelism between the bottom surface of the case 4 and the insulating substrate 1. Furthermore, since the insulating substrate 1 and the adhesive (hot melt adhesive 7 and thermosetting adhesive 8) are in contact with each other evenly, it is possible to prevent the concentration of tightening stress.

[0033] Next, a brief description will be given of a case where there is variation in the film thickness L1 of the hot melt adhesive 7. Figures 7 to 9 are cross-sectional views showing a method for manufacturing the semiconductor device 100 when there is variation in the film thickness L1 of the hot melt adhesive 7. Specifically, Figure 7 corresponds to Figure 1, Figure 8 corresponds to Figure 2, and Figure 9 corresponds to Figure 3.

[0034] 7, the film thickness L1 of the hot melt adhesive 7 is different between the left and right sides. For example, the film thickness L1 of the hot melt adhesive 7 on the left side is greater than the film thickness L1 of the hot melt adhesive 7 on the right side.

[0035] Next, as shown in Figure 8, in the temporary fixing process, the film thickness L1 of the hot melt adhesive 7 on the left side is thicker than the film thickness L1 of the hot melt adhesive 7 on the right side, so the load due to tightening stress is greater on the hot melt adhesive 7 on the left side than on the hot melt adhesive 7 on the right side.

[0036] Next, as shown in FIG. 9 , during the heating process, the hot melt adhesive 7 melts, and the downward load reduces the thickness L1 of the hot melt adhesive 7. However, because the load due to the tightening stress is greater on the left hot melt adhesive 7 than on the right hot melt adhesive 7, the left hot melt adhesive 7 deforms more than the right hot melt adhesive 7. In other words, the left hot melt adhesive 7 shrinks more than the right hot melt adhesive 7. The area of ​​the case 4 that is in contact with the hot melt adhesive 7 deforms downward, and at this time the thermosetting adhesive 8 hardens, so that L1 = L2. As a result, the parallelism between the bottom surface of the case 4 and the insulating substrate 1 can be maintained, and the insulating substrate 1 and the adhesive (hot melt adhesive 7 and thermosetting adhesive 8) are in even contact with each other, preventing the concentration of the tightening stress.

[0037] As described above, even when there is variation in the film thickness L1 of the hot melt adhesive 7, the same effect as when there is no variation in the film thickness L1 of the hot melt adhesive 7 shown in FIGS. 1 to 4 can be obtained.

[0038] <Embodiment 2> Next, a description will be given of a second embodiment. Figure 10 is a cross-sectional view showing a manufacturing method of a semiconductor device 100 according to the second embodiment. In the second embodiment, the same components as those described in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

[0039] In embodiment 1, in the application process, a hot melt adhesive 7 having a film thickness of L1 is applied to the upper surface of the peripheral portion of the insulating substrate 1, and then a thermosetting adhesive 8 having a film thickness of L2 is applied around the area on the upper surface of the peripheral portion of the insulating substrate 1 where the hot melt adhesive 7 has been applied.

[0040] 10, in the application step, hot melt adhesive 7 having a thickness of L1 is applied to groove 4a of case 4, and thermosetting adhesive 8 having a thickness of L2 is applied to the periphery of a portion of the upper surface of the peripheral edge of insulating substrate 1 that corresponds to the area where hot melt adhesive 7 is applied. Here, the portion of the upper surface of the peripheral edge of insulating substrate 1 that corresponds to the area where hot melt adhesive 7 is applied is the portion that faces the area where hot melt adhesive 7 is applied on the upper surface of the peripheral edge of insulating substrate 1. In embodiment 2, the same effects as in embodiment 1 can be obtained.

[0041] <Third Embodiment> Next, a description will be given of embodiment 3. Fig. 11 is a top view of insulating substrate 1 after the coating process in embodiment 3. In embodiment 3, the same components as those described in embodiments 1 and 2 are given the same reference numerals and descriptions thereof will be omitted.

[0042] As shown in Fig. 11 , in the application step of the third embodiment, the hot melt adhesive 7 is applied to the four corners of the insulating substrate 1 in an L-shape as viewed from above. More specifically, the hot melt adhesive 7 is applied to the portions of the insulating layer 1a at the four corners of the insulating substrate 1. Alternatively, although not shown, in the application step of the second embodiment, the hot melt adhesive 7 is applied to the grooves 4a at locations corresponding to the four corners of the insulating substrate 1 in an L-shape as viewed from below. Here, the locations of the grooves 4a corresponding to the four corners of the insulating substrate 1 are the locations of the grooves 4a facing the four corners of the insulating substrate 1.

[0043] As a result, it is possible to maintain parallelism between the bottom surface of the case 4 and the insulating substrate 1. Furthermore, by increasing the contact area between the insulating substrate 1 and the hot melt adhesive 7 during the temporary fixing process, it is possible to reduce the concentration of tightening stress and prevent the insulating substrate 1 from cracking.

[0044] <Fourth Embodiment> Next, a fourth embodiment will be described. Fig. 12 is a top view of the insulating substrate 1 after the coating step in the fourth embodiment. In the fourth embodiment, the same components as those described in the first to third embodiments are denoted by the same reference numerals, and the description thereof will be omitted.

[0045] 12, in the application step of the first embodiment, the hot melt adhesive 7 is applied in dots along the peripheral edge of the insulating substrate 1 in a top view. Alternatively, although not shown, in the application step of the second embodiment, the hot melt adhesive 7 is applied in dots along the grooves 4a in a bottom view. The hot melt adhesive 7 is also applied at approximately equal intervals.

[0046] As a result, the parallelism between the bottom surface of the case 4 and the insulating substrate 1 can be maintained, and the thickness of the adhesive (hot melt adhesive 7 and thermosetting adhesive 8) can be ensured. Furthermore, by increasing the contact area between the insulating substrate 1 and the hot melt adhesive 7 during the temporary fixing process, the concentration of tightening stress can be reduced, and cracks in the insulating substrate 1 can be suppressed.

[0047] <Fifth Embodiment> Next, a fifth embodiment will be described. Fig. 13 is a side view of insulating substrate 1 after the coating step in the fifth embodiment. In the fifth embodiment, the same components as those described in the first to fourth embodiments are denoted by the same reference numerals, and the description thereof will be omitted.

[0048] If the gap between the insulating substrate 1 and the case 4 is not uniform, stress will concentrate in the narrow gap during the temporary fixing process, leading to cracks in the insulating substrate 1. In contrast, as shown in Figure 13, in the application process of embodiment 5, embodiments 1 and 2 (more specifically, embodiment 4), the film thickness L1 of the hot melt adhesive 7 is set to match the height of the non-uniform gap between the insulating substrate 1 and the case 4. This makes it possible to prevent stress from concentrating in the narrow gap during the temporary fixing process.

[0049] It should be noted that the embodiments can be freely combined, and each embodiment can be modified or omitted as appropriate.

[0050] Various aspects of the present disclosure are summarized below as appendices.

[0051] (Appendix 1) A method for manufacturing a semiconductor device including an insulating substrate and a case having a groove on a bottom surface thereof that is fixed to a peripheral edge portion of the insulating substrate, the method comprising: a placing step of placing the insulating substrate on a case attachment jig; a coating step of coating a hot melt adhesive having a thickness of L1 on the upper surface of the peripheral edge portion of the insulating substrate, and then coating a thermosetting adhesive having a thickness of L2 around the area on the upper surface of the peripheral edge portion of the insulating substrate where the hot melt adhesive has been coated; a temporary fixing step of temporarily fixing the insulating substrate and the case by fastening the case and the case attachment jig with screws after placing the case so that the groove is positioned on the peripheral edge portion of the insulating substrate; a heating step of fixing the insulating substrate and the case by heating the temporarily fixed insulating substrate and the case, During the temporary fixing step, L1>L2, A method for manufacturing a semiconductor device, wherein L1=L2 during the heating step.

[0052] (Appendix 2) A method for manufacturing a semiconductor device including an insulating substrate and a case having a groove on a bottom surface thereof that is fixed to a peripheral edge portion of the insulating substrate, the method comprising: a placing step of placing the insulating substrate on a case attachment jig; a coating step of coating the groove of the case with a hot melt adhesive having a thickness of L1, and coating the insulating substrate with a thermosetting adhesive having a thickness of L2 around a portion of the upper surface of the peripheral edge portion of the insulating substrate corresponding to the area where the hot melt adhesive is coated; a temporary fixing step of temporarily fixing the insulating substrate and the case by fastening the case and the case attachment jig with screws after placing the case so that the groove is positioned on the peripheral edge portion of the insulating substrate; a heating step of fixing the insulating substrate and the case by heating the temporarily fixed insulating substrate and the case, During the temporary fixing step, L1>L2, A method for manufacturing a semiconductor device, wherein L1=L2 during the heating step.

[0053] (Appendix 3) 2. The method for manufacturing a semiconductor device according to claim 1, wherein in the applying step, the hot melt adhesive is applied to the four corners of the insulating substrate in an L-shape when viewed from above.

[0054] (Appendix 4) 3. The method for manufacturing a semiconductor device according to claim 2, wherein in the application step, the hot melt adhesive is applied to the groove at locations corresponding to the four corners of the insulating substrate in an L-shape when viewed from the bottom.

[0055] (Appendix 5) 2. The method for manufacturing a semiconductor device according to claim 1, wherein in the coating step, the hot melt adhesive is applied in a dot pattern along the peripheral edge of the insulating substrate when viewed from above.

[0056] (Appendix 6) 3. The method for manufacturing a semiconductor device according to claim 2, wherein in the applying step, the hot melt adhesive is applied in a dot pattern along the groove when viewed from the bottom.

[0057] (Appendix 7) The method for manufacturing a semiconductor device according to claim 1 or 2, wherein in the coating step, the film thickness L1 of the hot melt adhesive is set to match the height of a non-uniform gap between the insulating substrate and the case. [Explanation of symbols]

[0058] 1 insulating substrate, 4 case, 4a groove, 7 hot melt adhesive, 8 thermosetting adhesive, 30 case attachment jig, 100 semiconductor device.

Claims

1. A method for manufacturing a semiconductor device including an insulating substrate and a case having a groove on a bottom surface thereof that is fixed to a peripheral edge portion of the insulating substrate, the method comprising: a placing step of placing the insulating substrate on a case attachment jig; a coating step of coating a hot melt adhesive having a thickness of L1 on an upper surface of the peripheral edge portion of the insulating substrate, and then coating a thermosetting adhesive having a thickness of L2 around the area on the upper surface of the peripheral edge portion of the insulating substrate where the hot melt adhesive has been coated; a temporary fixing step of temporarily fixing the insulating substrate and the case by fastening the case and the case attachment jig with screws after placing the case so that the groove is positioned on the peripheral edge portion of the insulating substrate; a heating step of fixing the insulating substrate and the case by heating the temporarily fixed insulating substrate and the case, During the temporary fixing step, L1>L2, A method for manufacturing a semiconductor device, wherein L1=L2 during the heating step.

2. A method for manufacturing a semiconductor device including an insulating substrate and a case having a groove on a bottom surface thereof that is fixed to a peripheral edge portion of the insulating substrate, the method comprising: a placing step of placing the insulating substrate on a case attachment jig; a coating step of coating the groove of the case with a hot melt adhesive having a thickness of L1, and coating the insulating substrate with a thermosetting adhesive having a thickness of L2 around a portion of the upper surface of the peripheral edge portion of the insulating substrate corresponding to the area where the hot melt adhesive is coated; a temporary fixing step of temporarily fixing the insulating substrate and the case by fastening the case and the case attachment jig with screws after placing the case so that the groove is positioned on the peripheral edge portion of the insulating substrate; a heating step of fixing the insulating substrate and the case by heating the temporarily fixed insulating substrate and the case, During the temporary fixing step, L1>L2, A method for manufacturing a semiconductor device, wherein L1=L2 during the heating step.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein in the applying step, the hot melt adhesive is applied to the four corners of the insulating substrate in an L-shape when viewed from above.

4. 3. The method for manufacturing a semiconductor device according to claim 2, wherein in the applying step, the hot melt adhesive is applied to the groove at locations corresponding to four corners of the insulating substrate in an L-shape in a bottom view.

5. The method for manufacturing a semiconductor device according to claim 1 , wherein in the applying step, the hot melt adhesive is applied in a dot pattern along the peripheral edge of the insulating substrate when viewed from above.

6. The method for manufacturing a semiconductor device according to claim 2 , wherein in the applying step, the hot melt adhesive is applied in a dot pattern along the grooves when viewed from the bottom.

7. 3. The method for manufacturing a semiconductor device according to claim 1, wherein in the coating step, the thickness L1 of the hot melt adhesive is set to match the height of a non-uniform gap between the insulating substrate and the case.

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