Substrate processing apparatus and substrate processing method

Abstract

To provide a technology that can suppress particles.SOLUTION: A substrate processing apparatus includes a processing vessel, a turntable rotatably disposed within the processing vessel, a mounting table rotatable integrally with the turntable and rotatable relative to the turntable at a position away from the rotation center of the turntable, and a controller that controls the rotation of the turntable and the mounting table. The controller controls the rotation of the turntable and the mounting table such that the rotational centrifugal force generated by the rotation of the mounting table is greater than the revolutionary centrifugal force generated by the rotation of the turntable.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus having a processing vessel (vacuum vessel) and a rotary table rotatably (revolvingly) provided inside the processing vessel. The substrate processing apparatus also includes a plurality of mounting tables on which substrates are placed, arranged in the circumferential direction at positions away from the rotation center of the rotary table. Each mounting table is configured to be rotatable integrally with the rotary table and to be rotatable (spinning) relative to the rotary table.

[0003] Each substrate placed on each mounting table of the substrate processing apparatus moves within each mounting table due to centrifugal force generated by the rotation of the turntable. In particular, in the substrate processing apparatus, the rotation of the mounting table changes the position of the substrate within the mounting table, increasing the chance of the substrate moving. The movement of the substrate makes it more likely that particles will be generated. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2021-111758 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique that can suppress particles. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided a substrate processing apparatus including: a processing vessel; a turntable rotatably disposed within the processing vessel; a mounting table for mounting a substrate, the mounting table being rotatable integrally with the turntable and rotatable relative to the turntable at a position away from the center of rotation of the turntable; and a control unit for controlling the rotation of the turntable and the mounting table, wherein the control unit controls the rotation of the turntable and the mounting table so that the rotational centrifugal force generated by the rotation of the mounting table is greater than the revolutionary centrifugal force generated by the rotation of the turntable. [Effects of the Invention]

[0007] According to one aspect, particles can be suppressed. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a vertical cross-sectional view showing an example of the configuration of a substrate processing apparatus according to an embodiment; [Figure 2] 2 is a plan view showing the configuration inside a processing container of the substrate processing apparatus of FIG. 1. FIG. [Figure 3] 2 is a perspective view showing the configuration of a turntable and a mounting table of the substrate processing apparatus of FIG. 1. FIG. [Figure 4] Fig. 4(A) is a plan view showing a rotation state of a turntable and each mounting table of a substrate processing apparatus according to a reference example, and Fig. 4(B) is a view showing a state of a substrate on the mounting table according to the reference example. [Figure 5] Fig. 5(A) is a plan view showing a mounting table of the substrate processing apparatus according to the embodiment, and Fig. 5(B) is a cross-sectional view taken along line VB-VB in Fig. 5(A). [Figure 6] Fig. 6(A) is a plan view showing the rotational state of the turntable and each mounting table of the substrate processing apparatus according to the embodiment, and Fig. 6(B) is a view showing the state of the substrate W on the mounting table. [Figure 7]Figure 7(A) is a table showing the relationship between the revolution speed of the turntable and the rotation speed of the mounting table when the diameter φ of the mounting table is 302 mm. Figure 7(B) is a table showing the relationship between the revolution speed of the turntable and the rotation speed of the mounting table when the diameter φ of the mounting table is 340 mm. [Figure 8] 1 is a flowchart of a substrate processing method according to an embodiment. [Figure 9] Fig. 9(A) is an enlarged plan view of a mounting table according to a first modified example, and Fig. 9(B) is an enlarged plan view of a mounting table according to a second modified example. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0010] [Basic configuration of substrate processing equipment] A substrate processing apparatus 1 according to an embodiment will be described with reference to FIGS. 1 to 3. FIG. 1 is a vertical cross-sectional view showing an example of the configuration of the substrate processing apparatus 1 according to an embodiment. FIG. 2 is a plan view showing the configuration inside a processing chamber 11 of the substrate processing apparatus 1 of FIG. 1. For ease of explanation, a top plate is not shown in FIG. 2. FIG. 3 is a perspective view showing the configuration of a turntable 21 and a mounting table 211 of the substrate processing apparatus 1 of FIG. 1.

[0011] The substrate processing apparatus 1 is configured as an apparatus that performs a film formation process by atomic layer deposition (ALD) or molecular layer deposition (MLD) to form a film on the surface of a substrate W. The substrate processing apparatus 1 includes a processing unit 10, a rotation drive unit 20, a lifter unit 30, and a control unit 90.

[0012] The processing section 10 performs a film formation process to form a film on the substrate W. The processing section 10 includes a processing vessel 11, a gas inlet section 12, a gas exhaust section 13, a transfer port 14, and a heating section 15.

[0013] The processing vessel 11 is a vacuum vessel whose internal space can be decompressed to create a vacuum atmosphere. The processing vessel 11 is formed as a flat housing having a substantially circular planar shape, and can accommodate multiple substrates W in its internal space. The substrates W may be, for example, semiconductor wafers. The processing vessel 11 includes a main body 111, a top plate 112, a sidewall 113, and a bottom plate 114 (FIG. 1). The main body 111 has a cylindrical shape. The top plate 112 is detachably attached to the upper surface of the main body 111. The main body 111 and the top plate 112 are hermetically sealed together by a seal portion 115. The sidewall 113 has a cylindrical shape and is hermetically connected to the lower surface of the main body 111. The bottom plate 114 is hermetically connected to the bottom surface of the sidewall 113.

[0014] The gas introduction unit 12 includes a source gas nozzle 121, a reaction gas nozzle 122, and separation gas nozzles 123 and 124 ( FIG. 2 ). The source gas nozzle 121, the reaction gas nozzle 122, and the separation gas nozzles 123 and 124 are arranged above a turntable 21 (described later) at intervals along the circumferential direction of the processing vessel 11 (the direction indicated by arrow A in FIG. 2 ). In the illustrated example, the separation gas nozzle 123, the source gas nozzle 121, the separation gas nozzle 124, and the reaction gas nozzle 122 are arranged in this order clockwise (the rotation direction of the turntable 21) from the transfer port 14. The source gas nozzle 121, the reaction gas nozzle 122, and the separation gas nozzles 123 and 124 each have gas introduction ports 121p, 122p, 123p, and 124p ( FIG. 2 ) at their base ends for introducing various gases. Gas introduction ports 121p, 122p, 123p, and 124p are fixed to the sidewall of main body 111 and protrude to the outside of main body 111. Source gas nozzle 121, reaction gas nozzle 122, and separation gas nozzles 123 and 124 are inserted into processing vessel 11 from the sidewall of main body 111 and extend radially inward of main body 111. Source gas nozzle 121, reaction gas nozzle 122, and separation gas nozzles 123 and 124 are made of, for example, quartz, and are arranged parallel to turntable 21.

[0015] The source gas nozzle 121 is connected to a source gas supply source (not shown) via piping and a flow rate controller (not shown). For example, a silicon-containing gas or a metal-containing gas can be used as the source gas. The source gas nozzle 121 has a plurality of discharge holes (not shown) that open toward the turntable 21 and are arranged at intervals along the axial direction of the source gas nozzle 121. The region below the source gas nozzle 121 serves as a source gas adsorption region P1 for adsorbing the source gas onto the substrate W.

[0016] The reactive gas nozzle 122 is connected to a reactive gas supply source (not shown) via piping and a flow rate controller (not shown). The reactive gas may be, for example, an oxidizing gas or a nitriding gas. The reactive gas nozzle 122 has a plurality of discharge holes (not shown) that open toward the turntable 21 and are arranged at intervals along the axial direction of the reactive gas nozzle 122. The region below the reactive gas nozzle 122 serves as a reactive gas supply region P2 that oxidizes or nitrides the source gas adsorbed on the substrate W in the source gas adsorption region P1. In this embodiment, the process gas used to process the substrate W corresponds to the above-mentioned source gas and reactive gas.

[0017] The separation gas nozzles 123, 124 are both connected to a separation gas supply source (not shown) via piping and flow control valves (not shown). Examples of the separation gas that can be used include inert gases such as argon (Ar) gas and nitrogen (N) gas. The separation gas nozzles 123, 124 have multiple discharge holes (not shown) that open toward the rotary table 21 and are arranged at intervals along the axial direction of the separation gas nozzles 123, 124.

[0018] 2, two convex portions 17 are provided in processing vessel 11. Convex portion 17, together with separation gas nozzles 123 and 124, constitutes separation region D, and is attached to the underside of top plate 112 so as to protrude toward turntable 21. Each convex portion 17 has a fan-shaped planar shape with its top cut into an arc shape, with the inner arc connected to protruding portion 18 and the outer arc arranged along the side wall of processing vessel 11.

[0019] The gas exhaust section 13 includes a first exhaust port 131 and a second exhaust port 132 (FIG. 2). The first exhaust port 131 is formed at the bottom of a first exhaust region E1 that communicates with the source gas adsorption region P1. The second exhaust port 132 is formed at the bottom of a second exhaust region E2 that communicates with the reaction gas supply region P2. The first exhaust port 131 and the second exhaust port 132 are connected to an exhaust device (not shown) via exhaust piping (not shown).

[0020] The transfer port 14 is provided in a side wall of the main body 111 (FIG. 2). Through the transfer port 14, the substrate W is transferred between the turntable 21 in the processing vessel 11 and a transfer device 14a outside the processing vessel 11. The transfer port 14 is opened and closed by a gate valve (not shown).

[0021] The heating part 15 includes a fixed shaft 151, a heater support part 152, and a heater 153 (FIG. 1). The substrate processing apparatus 1 may include a cooling part for cooling the substrate W instead of (or in addition to) the heating part 15.

[0022] Fixed shaft 151 has a cylindrical shape with its central axis at the center of processing vessel 11. Fixed shaft 151 penetrates bottom plate 114 of processing vessel 11 inside rotation shaft 23 of rotation drive device 20, which will be described later.

[0023] The rotary drive device 20 includes a rotary table 21 , a housing box 22 , a rotary shaft 23 , a revolution motor 24 , and an outer cylinder 25 .

[0024] The turntable 21 is provided in the processing vessel 11 and has a rotation center at the center of the processing vessel 11. The turntable 21 has, for example, a disk shape and is made of quartz. On the upper surface of the turntable 21, a plurality of (for example, five) mounting tables 211 are provided along the rotation direction (circumferential direction). The turntable 21 is connected to the storage box 22 via a connection part 214 (FIG. 3).

[0025] Each mounting table 211 has a disk shape slightly larger than the substrate W and is made of, for example, quartz. Each mounting table 211 is connected to a rotation motor 213 via a rotation shaft 212 and is configured to be rotatable relative to the turntable 21 (FIG. 1).

[0026] The rotation shaft 212 connects the underside of the mounting table 211 with the rotation motor 213 housed in the storage box 22, and transmits the power of the rotation motor 213 to the mounting table 211. The rotation shaft 212 is configured to be rotatable around the center of the mounting table 211. The rotation shaft 212 is provided to penetrate the ceiling 222 of the storage box 22 and the turntable 21. A seal 263 is provided near the penetration part of the ceiling 222 of the storage box 22, and maintains an airtight state inside the storage box 22. The seal 263 includes, for example, a magnetic fluid seal.

[0027] The rotation motor 213 rotates the mounting table 211 relatively to the turntable 21 via the rotation shaft 212, thereby rotating the substrate W around the center of the substrate W. It is preferable to use a servo motor, for example, as the rotation motor 213.

[0028] The connection portion 214 connects the lower surface of the turntable 21 to the upper surface of the storage box 22 (FIG. 3). A plurality of connection portions 214 are provided along the circumferential direction of the turntable 21.

[0029] The storage box 22 is provided below the turntable 21 in the processing vessel 11. The storage box 22 is connected to the turntable 21 via a connection part 214 and rotates integrally with the turntable 21. The storage box 22 may be configured to be movable up and down within the processing vessel 11 by an elevation mechanism (not shown). The storage box 22 has a main body part 221 and a ceiling part 222.

[0030] The main body 221 is formed in a concave shape in a vertical cross section, and is formed in a ring shape along the rotation direction of the turntable 21 (FIG. 1).

[0031] The ceiling portion 222 is provided on the upper surface of the main body portion 221 so as to cover the opening of the main body portion 221. As a result, the main body portion 221 and the ceiling portion 222 form a rotation container portion 223 that is isolated from the inside of the processing vessel 11.

[0032] The rotary container 223 is formed in a rectangular shape in a vertical cross section and has a ring shape along the rotation direction of the turntable 21. The rotary container 223 houses a rotation motor 213 (rotation source). A communication passage 224 that connects the rotary container 223 to the outside of the substrate processing apparatus 1 is formed in the main body 221. This allows air to be introduced into the rotary container 223 from the outside of the substrate processing apparatus 1, cooling the interior of the rotary container 223 and maintaining it at atmospheric pressure. In order to rotatably dispose the rotary container 223, the processing vessel 11 has a rotation source housing space 19 surrounded by a sidewall 113, a bottom plate 114, and a heating unit 15.

[0033] The rotating shaft 23 is fixed to the bottom of the storage box 22. The rotating shaft 23 is installed to penetrate the bottom plate 114 of the processing vessel 11. The rotating shaft 23 transmits the power of the revolution motor 24 to the rotating table 21 and the storage box 22, causing the rotating table 21 and the storage box 22 to rotate together. A seal unit 154 is installed between the outer wall of the fixed shaft 151 and the inner wall of the rotating shaft 23 of the rotation drive device 20. This allows the rotating shaft 23 to rotate relative to the fixed shaft 151 while maintaining an airtight state inside the processing vessel 11. The seal unit 154 can be, for example, a magnetic fluid seal.

[0034] An outer cylinder 25 of the rotation drive device 20 is connected to the lower surface of the center side of the bottom plate 114 of the processing vessel 11. The outer cylinder 25 supports the processing vessel 11 together with a fixed shaft 151 of the processing vessel 11. A seal unit 116 is provided between the rotation shaft 23 and the outer cylinder 25 to maintain an airtight state inside the processing vessel 11. For example, a magnetic fluid seal can be used as the seal unit 116.

[0035] A passage 231 is formed inside the rotating shaft 23. The passage 231 is connected to the communication passage 224 of the housing box 22, and functions as a fluid flow path for introducing air into the housing box 22. The passage 231 also functions as a wiring duct for introducing power lines and signal lines for driving the rotation motor 213 into the housing box 22. The passages 231 are provided in the same number as the rotation motors 213, for example.

[0036] 1, when the transfer device 14a (FIG. 2) loads and unloads the substrate W onto and from the mounting table 211, the lifter unit 30 raises and lowers multiple (three in this embodiment) lift pins 31 to receive and transfer the substrate W to and from the transfer device 14a. In the substrate processing apparatus 1, the lifter unit 30 is installed vertically below a position facing the mounting table adjacent to the transfer opening 14. The lifter unit 30 is provided in the processing vessel 11 with multiple (three) upper structure units 40, each having multiple lift pins 31, and one lower operating unit 50 that simultaneously lifts and lowers the multiple lift pins 31.

[0037] Each upper structure 40 is installed to penetrate the heater support 152 and the heater 153, and displaceably accommodates the lift pins 31. The lower operating unit 50 is attached to the lower surface of the bottom plate 114 of the processing vessel 11. The lower operating unit 50 has multiple (three) plungers 51 that displace along the vertical direction and press the lower ends 32 of the lift pins 31. That is, the lifter unit 30 has a two-stage structure that includes, as operating members, multiple lift pins 31 that come into contact with the substrate W and multiple plungers 51 that indirectly lift and lower the substrate W via the lift pins 31, separated in the vertical direction.

[0038] In addition to each plunger 51, the lower operating unit 50 also includes a case 52 and a plunger drive unit 53. Each plunger 51 is formed in the shape of a long, slender solid rod, and is moved within the rotation source accommodating space 19 by the plunger drive unit 53. As each plunger 51 rises, the lifter unit 30 comes into contact with the lift pins 31 of each upper structural unit 40, thereby pushing up the lift pins 31.

[0039] Each upper structure 40 is provided at a radially spaced position from the rotation axis 212 and along the circumferential direction of the mounting table 211. Each upper structure 40 supports a lift pin 31 vertically downward so that it cannot fall off. The mounting table 211 also has multiple (three) through-holes 211a through which each lift pin 31 can pass, corresponding to the arrangement positions of each upper structure 40 (see also FIG. 2). The lift pin 31 is a cylindrical member extending linearly, and rises when its lower end is pushed up by the rising plunger 51. As a result, the upper end of the lift pin 31 protrudes from the upper surface of the mounting table 211 through the through-hole 211a of the mounting table 211.

[0040] Returning to FIG. 1 , the control unit 90 is configured to control each component of the substrate processing apparatus 1. The control unit 90 includes a control unit 91 and a user interface 95. The control unit 91 is a computer having a processor 92, a memory 93, and an input / output interface and a communication interface (not shown). The processor 92 is a combination of one or more of a central processing unit (CPU), a graphics processing unit (GPU), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a circuit made up of multiple discrete semiconductors, etc. The memory 93 includes a main storage device made up of a semiconductor memory or the like, and an auxiliary storage device made up of a disk, semiconductor memory (flash memory), etc. In other words, in the present disclosure, the control unit 90 is an electronic circuit having a CPU, a GPU, an ASIC, an FPGA, etc., and performs various control operations described in this specification by executing instruction codes stored in the memory 93 or by being a circuit designed for a specific application.

[0041] Furthermore, the user interface 95 is connected to the input / output interface of the control main body 91. This user interface 95 is not particularly limited, but examples thereof include a touch panel, a monitor, a keyboard, and a mouse.

[0042] The substrate processing apparatus 1 configured as described above rotates (revolves) the turntable 21 while a substrate W is placed on each of the multiple mounting tables 211 of the turntable 21, and also rotates (spins) each mounting table 211. Then, while each substrate W is revolving and spinning, the substrate processing apparatus 1 supplies a processing gas from the gas introduction unit 12 into the processing chamber 11, thereby performing substrate processing on each substrate W.

[0043] [Particle generation during substrate processing] In a configuration in which each substrate W is revolved and rotated on its axis during substrate processing, each substrate W moves within the mounting table due to centrifugal force during rotation. To facilitate understanding of the present disclosure, a substrate processing apparatus 1' according to a reference example will be described below with reference to FIGS. 4(A) and 4(B). FIG. 4(A) is a plan view showing the rotational state of the turntable 21 and each mounting table 211 of the substrate processing apparatus 1' according to the reference example. FIG. 4(B) is a diagram showing the state of the substrate W on the mounting table 211 according to the reference example.

[0044] As shown in FIG. 4A, each substrate W placed on each mounting table 211 of the turntable 21 is subjected to centrifugal force as the turntable 21 rotates. Hereinafter, the centrifugal force generated as the turntable 21 rotates is also referred to as revolution centrifugal force. Each substrate W on each mounting table 211 is also subjected to centrifugal force generated as the mounting table 211 rotates. Hereinafter, the centrifugal force generated as the mounting table 211 rotates is also referred to as rotation centrifugal force. However, in the substrate processing apparatus 1′ according to the reference example, the rotation speed of each mounting table 211 is set to be significantly slower than the revolution speed of the turntable 21. For example, in the substrate processing according to the reference example, the rotation speed of the turntable 21 is set to 60 rpm, while the rotation speed of each mounting table 211 is set to 5.5 rpm.

[0045] Therefore, the substrate processing apparatus 1' according to the reference example applies forces to each substrate W during substrate processing such that the revolutionary centrifugal force is greater than the rotational centrifugal force. In this case, as shown in the left diagram of FIG. 4(B), each substrate W is subjected to the revolutionary centrifugal force directed radially outward from the turntable 21, and moves radially outward from the turntable 21 within each mounting table 211 against the frictional force. For example, the substrate W moves within the mounting table 211 and comes into contact with the inner circumferential surface surrounding the mounting table 211. Furthermore, as shown in the middle diagram of FIG. 4(B), the substrate W that has moved to the inner circumferential surface orbits within the mounting table 211 as the mounting table 211 rotates. Then, for example, as shown in the right diagram of FIG. 4(B), the substrate W is subjected to the revolutionary centrifugal force at a position closer to the rotation center of the turntable 21, and moves radially outward within the mounting table 211 and again comes into contact with the inner circumferential surface on the radially outer side. In the substrate processing apparatus 1' according to the reference example, the substrate W is repeatedly moved within the mounting table 211 in this manner, which increases the chances of the substrate W being rubbed against or colliding with each other during movement, resulting in the generation of particles.

[0046] [Configuration for particle suppression] FIG. 5(A) is a plan view showing the mounting table 211 of the substrate processing apparatus 1 according to the embodiment. FIG. 5(B) is a cross-sectional view taken along line VB-VB in FIG. 5(A). FIG. 6(A) is a plan view showing the rotational state of the turntable 21 and each mounting table 211 of the substrate processing apparatus 1 according to the embodiment. FIG. 6(B) is a diagram showing the state of the substrate W on the mounting table 211. Therefore, the substrate processing apparatus 1 according to the embodiment is configured so that each mounting table 211 is concave as shown in FIGS. 5(A) and 5(B), and so that the rotational centrifugal force is greater than the revolutional centrifugal force as shown in FIGS. 6(A) and 6(B).

[0047] Specifically, the mounting table 211 has a bottom wall 211b on which the substrate W is placed, and a side wall 211s protruding from the outer edge of the bottom wall 211b. The bottom wall 211b and the side wall 211s form a recess 211c on the inside thereof. The side wall 211s is formed in a perfect circular ring shape in a plan view. There are no particular limitations on the height of the side wall 211s, but it is preferably set to be equal to or greater than the thickness of the substrate W. The mounting table 211 is configured to rotate around the center 211o by a rotation shaft 212 connected to the center 211o. In this embodiment, the center 211o of the outer shape of the mounting table 211 (the outer peripheral surface of the side wall 211s) and the center of the recess 211c coincide with each other.

[0048] When the substrate W placed in the recess 211c of the mounting table 211 moves in the planar direction of the bottom wall 211b due to centrifugal force, it comes into contact with the side wall 211s. Figures 5(A) and 5(B) show the state in which the substrate W comes into contact with the side wall 211s. Even when centrifugal force is applied to the substrate W in contact with the side wall 211s, the side wall 211s restricts further movement of the substrate W in contact with the side wall 211s, and the side wall 211s also prevents the substrate W from separating from the mounting table 211. As a result, the center Wo of the substrate W rotates while being shifted from the center 211o of the mounting table 211. When the rotational centrifugal force is greater than the revolutionary centrifugal force, the mounting table 211 continues to rotate while the substrate W is in contact with the side wall 211s. In other words, the repeated movement of each substrate W within each mounting table 211 as shown in Figure 4(B) is eliminated.

[0049] 6(A), the substrate processing apparatus 1 uses the control unit 90 to control the rotation of the turntable 21 and the rotation of each mounting table 211 to establish the relationship of revolution centrifugal force < rotation centrifugal force. When the rotation centrifugal force is greater than the revolution centrifugal force as described above, the substrate W comes into contact with the sidewall 211s of each mounting table 211, and then rotates integrally with each mounting table 211.

[0050] That is, as shown in the left diagram of FIG. 6(B), each substrate W moves radially outward of the turntable 21 within the recess 211c of the mounting table 211 and comes into contact with the sidewall 211s. Then, the substrate W that has moved to the sidewall 211s is subjected to a rotational centrifugal force that is greater than the revolutionary centrifugal force due to the rotation of the mounting table 211. As a result, the substrate W maintains its position even when it moves in the tangential direction of the rotational direction of the turntable 21 as shown in the middle diagram of FIG. 6(B) or when it moves toward the center of the turntable 21 as shown in the right diagram of FIG. 6(B). In other words, the substrate processing apparatus 1 substantially fixes the substrate W within the mounting table 211 to prevent repeated movement due to the relationship that the revolutionary centrifugal force is less than the rotational centrifugal force. By reducing the frequency of movement of the substrate W within the mounting table 211 in this way, the substrate processing apparatus 1 can suppress particle generation.

[0051] Next, the settings of various parameters for establishing the relationship of revolution centrifugal force < rotation centrifugal force will be described with reference to Figures 7(A) and 7(B). Figure 7(A) is a table showing the relationship between the revolution rotation speed of the turntable 21 and the rotation rotation speed of the mount table 211 when the diameter φ of the mount table 211 is 302 mm. Figure 7(B) is a table showing the relationship between the revolution rotation speed of the turntable 21 and the rotation rotation speed of the mount table 211 when the diameter φ of the mount table 211 is 340 mm. The diameter φ of the mount table 211 is the distance between the inner circumferential surfaces of the side walls 211s passing through the center 211o of the mount table 211, in other words, twice the radius of the recess 211c from the center 211o to the side wall 211s.

[0052] The centrifugal force of a rotating object generated by rotation is generally expressed by the following formula (1).

[0053] F=mω 2 r …(1) Here, m is the mass of the rotating object, ω is the rotational speed during rotation, and r is the radius of rotation.

[0054] Therefore, the revolution centrifugal force F1 that the substrate W placed on each mounting table 211 receives from the turntable 21 can be expressed by the following equation (2), assuming that the revolution rotation speed is ω1 and the rotation radius from the center of rotation of the turntable 21 to the center Wo of each substrate W is r1.

[0055] F1=mω1 2 r1…(2) Here, m is the mass of the substrate W. The radius of rotation r1 can be approximated to the distance from the rotation center of the turntable 21 to the center 211o of the mounting table 211.

[0056] On the other hand, the rotational centrifugal force F2 applied to the substrate W as it moves from the mounting table 211 to the side wall 211s can be expressed by the following equation (3), where the rotational speed is ω2 and the rotation radius from the center 211o of the mounting table 211 to the center Wo of the substrate W is r2.

[0057] F2=mω2 2 r2…(3) Here, m is the mass of the substrate W.

[0058] Therefore, in order for the above-mentioned relationship of revolution centrifugal force F1 < rotation centrifugal force F2 to hold, ω1 2 r1<ω2 2Each parameter can be set so that the radius of rotation r1 is equal to r2. However, the radius of rotation r1, one of the parameters of the centrifugal force of revolution, depends on the number of mounting tables 211 installed on the turntable 21 and the size of the turntable 21, etc. In other words, it is preferable that the radius of rotation r1 is as small as possible, but if the radius of rotation r1 is small, the size of the turntable 21 is reduced and the number of mounting tables 211 installed is reduced. In this case, the number of substrates W processed in one substrate processing run is reduced. On the other hand, the radius of rotation r2, one of the parameters of the centrifugal force of rotation, is determined depending on the diameter φ of the mounting tables 211, which also affects the number of mounting tables 211 installed on the turntable 21. In other words, it is preferable that the radius of rotation r2 is as large as possible, but if the radius of rotation r2 is large, there is a possibility that adjacent mounting tables 211 in the circumferential direction will overlap, which will again reduce the number of mounting tables 211 installed. Therefore, in this case as well, the number of substrates W processed in one substrate processing run is reduced.

[0059] From the above, it is recommended that the rotation radii r1 and r2 be determined by first determining the size of the turntable 21 and the number of mounting tables 211 to be mounted on the turntable 21, and then determining the rotation radii r1 and r2. In FIG. 7A, the diameter φ of the mounting table 211 is 302 mm, and when the diameter of the substrate W is 300 mm, the rotation radius r2 is 1 mm. In FIG. 7B, the diameter φ of the mounting table 211 is 340 mm, and when the diameter of the substrate W is 300 mm, the rotation radius r2 is 20 mm. As shown in FIGS. 7A and 7B, the larger the diameter φ of the mounting table 211, the wider the range of revolutionary rotation speed and rotational rotation speed (column A) at which the particle suppression effect is greatest. In other words, even when the revolutionary rotation speed and rotational rotation speed are the same, the larger the diameter φ of the mounting table 211 (in other words, the rotation radius r2), the easier it is to establish a relationship in which the revolutionary centrifugal force is smaller than the rotational centrifugal force.

[0060] However, as described above, if the diameter φ (rotation radius r2) of the mounting base 211 is too large, there is a possibility that adjacent mounting bases 211 in the circumferential direction may overlap with each other. For example, if five mounting bases 211 are set on the turntable 21, the diameter φ of each mounting base 211 is preferably in the range of approximately 302 mm to 350 mm. Furthermore, if five mounting bases 211 are set on the turntable 21, the relationship between the rotation radius r1 of the turntable 21 and the rotation radius r2 of each mounting base 211 is preferably set to approximately r1 / 10≧r2. In this way, by setting the rotation radii r1 and r2 based on the size of the turntable 21 and the number of mounting bases 211, it is possible to appropriately design the diameter φ (rotation radius r2) of each mounting base 211 without overlapping with each other. The number of mounting bases 211 to be set is not particularly limited and may be four or less, or six or more.

[0061] Furthermore, the relationship between the revolution rotation speed ω1 and the rotation rotation speed ω2, where the revolution centrifugal force is less than the rotation centrifugal force, is simply ω1<ω2. However, if it is desired to fix the substrate W more securely, it is desirable to set the rotation centrifugal force somewhat larger than the revolution centrifugal force. Therefore, the relationship between the revolution rotation speed ω1 and the rotation rotation speed ω2 that can sufficiently obtain the particle suppression effect is preferably such that the rotation rotation speed ω2 is 2.5 times or more the revolution rotation speed ω1 (that is, 2.5×ω1≦ω2). This allows the substrate processing apparatus 1 to sufficiently increase the rotation centrifugal force.

[0062] Furthermore, in substrate processing (film formation processing), the efficiency of substrate processing improves as the revolution rotation speed and / or rotation rotation speed increases, but this tends to decrease the quality of the film formed on each substrate W. For this reason, it is preferable to select appropriate revolution rotation speed and rotation rotation speed taking into consideration the efficiency of substrate processing, the film quality of each substrate W, and the particle suppression effect as shown in Figures 7(A) and 7(B), etc.

[0063] As an example, when emphasis is placed on the efficiency of substrate processing, it is preferable to set the revolution rotation speed to 40 rpm or higher. Furthermore, it is preferable to set the rotation rotation speed to 10 times or higher than the revolution rotation speed. This allows the substrates W to be fixed to each mounting table 211 while performing substrate processing in a short time, thereby enhancing the particle suppression effect. In particular, by setting the diameter φ of the mounting table 211 to 340 mm and the rotation radius r2 to be large, while setting the revolution rotation speed to 120 rpm or higher and the rotation rotation speed to 600 rpm or higher, it becomes possible to perform substrate processing in a shorter time.

[0064] On the other hand, when the quality of substrate processing (film quality) is important, it is preferable to set the revolution speed to 20 rpm or less. As shown in Figures 7(A) and 7(B), if the revolution speed is 20 rpm or less, the particle suppression effect can be improved regardless of the rotation speed being 50 rpm or more.

[0065] [Substrate processing method] The substrate processing apparatus 1 according to the embodiment is basically configured as described above, and its operation (substrate processing method) will be described below with reference to Fig. 8. Fig. 8 is a flowchart of the substrate processing method according to the embodiment.

[0066] In the substrate processing method, the control unit 90 of the substrate processing apparatus 1 controls steps S101 to S108 shown in FIG. 8 to perform substrate processing (film formation processing) for forming a desired film on the substrate W, for example.

[0067] The control unit 90 controls the substrate processing apparatus 1 and the transport device 14a to first sequentially place the substrates W on the five mounting tables 211 of the turntable 21 (step S101). At this time, the substrate processing apparatus 1 rotates the turntable 21 so that the center Wo of the substrate W coincides with the center 211o of the mounting table 211, while the transport device 14a transports the substrate W to directly above the mounting table 211. Then, the lifter unit 30 receives the substrate W from the transport device 14a by raising the lift pins 31, and after the transport device 14a retreats, lowers the lift pins 31 to place the substrate W in the recessed portion 211c of the mounting table 211.

[0068] After the substrates W are placed on the respective mounting tables 211, the control unit 90 starts the rotation of the respective rotation motors 213 to rotate the respective mounting tables 211 on which the substrates W are placed (step S102). Note that, before substrate processing is performed, the control unit 90 sets a target rotation speed for each mounting table 211, which is a rotation speed that has a large effect of suppressing particles, either automatically or based on a user input.

[0069] Then, the control unit 90 determines whether the actual rotation speed of each mounting table 211 has reached the target rotation speed (step S103). If the rotation speed has reached the target rotation speed (step S103: YES), the process proceeds to step S104, and if the rotation speed has not reached the target rotation speed (step S103: NO), the control unit 90 repeats the monitoring of step S103.

[0070] Next, the control unit 90 starts the rotation of the revolution motor 24 to rotate the turntable 21 (step S104). The control unit 90 also sets the target rotation speed of the turntable 21 automatically or based on a user input before starting the substrate processing. As described above, the target rotation speed of the turntable 21 is also set corresponding to the revolution rotation speed that has a large particle suppression effect.

[0071] When the revolution speed of the turntable 21 increases, each substrate W in each mounting table 211 moves radially outward from the turntable 21 and comes into contact with the sidewall 211s. However, since the relationship of revolution centrifugal force < rotation centrifugal force holds, each substrate W, after once coming into contact with the sidewall 211s, maintains that position and rotates with the rotation of each mounting table 211. This prevents each substrate W from repeatedly moving within each mounting table 211, thereby suppressing the generation of particles.

[0072] Then, the control unit 90 determines whether the actual revolution rotation speed of the turntable 21 has reached the target rotation speed (step S105). If the revolution rotation speed has reached the target rotation speed (step S105: YES), the process proceeds to step S106, and if the revolution rotation speed has not reached the target rotation speed (step S105: NO), the control unit 90 repeats the monitoring of step S103.

[0073] By performing the above-described steps up to step S105, the substrate processing apparatus 1 reaches a step of simultaneously rotating the turntable 21 and the mounting tables 211. In this step, the control unit 90 supplies processing gas into the processing chamber 11 via the gas introduction unit 12 to perform substrate processing (film formation processing) on ​​each substrate W (step S106). Even during substrate processing, the turntable 21 maintains the revolution rotation speed, which is the target rotation speed, and each mounting table 211 maintains the rotation rotation speed, which is the target rotation speed. In other words, a relationship is maintained in which the rotation centrifugal force is greater than the revolution centrifugal force, so that the movement of each substrate W on each mounting table 211 can be regulated and the generation of particles can be suppressed.

[0074] During the execution of the above substrate processing, the control unit 90 determines whether or not to terminate the substrate processing (step S107). For example, the control unit 90 monitors whether or not a target period for the substrate processing set by a recipe or the like has elapsed, and determines to terminate the substrate processing when the target period has elapsed. If the substrate processing is to be terminated (step S107: YES), the control unit 90 proceeds to step S108, and if the substrate processing is not to be terminated (step S107: NO), the control unit 90 continues the substrate processing and repeats this monitoring.

[0075] Finally, the control unit 90 stops the supply of processing gas, stops the rotation of the turntable 21 and each mounting table 211, and performs termination processing such as removing each substrate W from the turntable 21, thereby ending the current substrate processing (step S108).

[0076] As described above, in the substrate processing method, the rotational centrifugal force acting on the substrate W is greater than the revolutional centrifugal force, thereby reducing the movement of the substrate W within each mounting table 211. As a result, the substrate processing method can suppress particles from being generated on the substrate W within each mounting table 211.

[0077] [Variations] The substrate processing apparatus 1 and substrate processing method according to the present disclosure are not limited to the above-described embodiment and may take various modifications. For example, in the substrate processing method of Fig. 8, the mounting tables 211 are rotated before the turntable 21 so that the centrifugal force of rotation is applied to each substrate W first. However, the substrate processing method may rotate the turntable 21 before the mounting tables 211. Alternatively, the substrate processing method may rotate the turntable 21 and the mounting tables 211 simultaneously.

[0078] 9(A) is an enlarged plan view of a mounting table 211A according to a first modified example. FIG. 9(B) is an enlarged plan view of a mounting table 211B according to a second modified example. As shown in FIG. 9(A), the mounting table 211A according to the first modified example differs from the mounting table 211 according to the embodiment in that the position of the recess 211c1 that accommodates the substrate W is shifted with respect to the overall outer shape of the mounting table 211A. Specifically, the mounting table 211A has a recess 211c1 that is circular in plan view. One side (the lower side in FIG. 9(A)) of the sidewall 211s surrounding the recess 211c1 is narrow, while the other side (the upper side in FIG. 9(A)) is wide.

[0079] The mounting table 211A configured in this manner is positioned such that the center 211o (rotation center) of the mounting table 211A and the center of the recess 211c1 (not shown) are offset in advance, and the diameter of the recess 211c can be reduced. Because the center of the recess 211c1 is offset in advance, the substrate W placed on the recess 211c1 is easily subjected to the rotational centrifugal force of the rotating mounting table 211A, and moves a short distance toward one side of the recess 211c1. The same is true when the substrate W is subjected to the revolutionary centrifugal force. Furthermore, in the substrate processing apparatus 1 having the mounting table 211A, since the relationship of revolutionary centrifugal force < rotational centrifugal force is established, the substrate W can be easily fixed to one side and continue to rotate. Therefore, an improved particle suppression effect can be expected.

[0080] As shown in FIG. 9B, the mounting table 211B according to the second modification differs from the mounting tables 211 and 211A in that the entire mounting table 211B is circular in plan view, while the recess 211c2 for accommodating the substrate W is elliptical in plan view. The mounting table 211B includes the recess 211c2, which facilitates movement of the substrate W placed in the recess 211c2 along the major axis of the ellipse. Therefore, when subjected to the centrifugal force of revolution, the substrate W can smoothly move toward one end of the major axis of the recess 211c1. Furthermore, in a substrate processing apparatus 1 including the mounting table 211B, since the relationship of revolution centrifugal force < rotation centrifugal force holds, the substrate W can be easily fixed at one end of the major axis and continue to rotate. Therefore, in this case as well, an improved particle suppression effect can be expected.

[0081] The technical ideas and effects of the present disclosure explained in the above embodiments will be described below.

[0082] A substrate processing apparatus 1 according to a first aspect of the present disclosure includes a processing vessel 11, a turntable 21 rotatably arranged inside the processing vessel 11, mounting tables 211, 211A, 211B that are rotatable integrally with the turntable 21 and are rotatable relative to the turntable 21 at a position away from the rotation center of the turntable 21, and that support a substrate W, and a control unit 90 that controls the rotation of the turntable 21 and the rotation of the mounting tables 211, 211A, 211B, and the control unit 90 controls the rotation of the turntable 21 and the rotation of the mounting tables 211, 211A, 211B so that the rotational centrifugal force generated by the rotation of the turntable 21 is greater than the revolutionary centrifugal force generated by the rotation of the turntable 21.

[0083] As described above, the substrate processing apparatus 1 can suppress particles by controlling the rotation of the turntable 21 and the rotation of the mounting tables 211, 211A, 211B so that the rotational centrifugal force is greater than the revolutional centrifugal force. That is, the movement of the substrates W placed on the mounting tables 211, 211A, 211B within the mounting tables 211, 211A, 211B is suppressed by the rotational centrifugal force associated with the rotation of the mounting tables 211, 211A, 211B. As a result, it is possible to suppress the generation of particles due to friction and collision caused by the movement of the substrates W.

[0084] Furthermore, the rotational speed of the mounting tables 211, 211A, and 211B is faster than the revolutional speed of the turntable 21. This allows the substrate processing apparatus 1 to easily establish a relationship in which the rotational centrifugal force is greater than the revolutional centrifugal force, thereby suppressing particle generation while avoiding an increase in costs required for this suppression.

[0085] Furthermore, the rotation speed is 2.5 times or more the revolution speed, which allows the substrate processing apparatus 1 to make the rotation centrifugal force greater than the revolution centrifugal force, thereby significantly reducing particles.

[0086] The revolution speed is 40 rpm or more, and the rotation speed is 10 times the revolution speed or more. This allows the substrate processing apparatus 1 to sufficiently suppress particles during substrate processing while ensuring the efficiency of substrate processing for the substrates W.

[0087] Furthermore, the rotation radius r2 from the rotation center of the mounting tables 211, 211A, 211B to the center of the substrate W is 1 / 10 or less of the rotation radius r1 from the rotation center of the turntable 21 to the rotation center of the mounting table 211. This allows the substrate processing apparatus 1 to increase the number of mounting tables 211, 211A, 211B on the turntable 21 while obtaining the centrifugal force of the rotation of the mounting tables 211, 211A, 211B.

[0088] Furthermore, the mounting tables 211, 211A, and 211B each have a recess 211c surrounded by a bottom wall 211b on which the substrate W is placed and a side wall 211s that protrudes from the outer edge of the bottom wall 211b and is contactable with the outer edge of the substrate W. As a result, after the substrate W comes into contact with the side wall 211s on the mounting tables 211, 211A, and 211B, the substrate processing apparatus 1 can press the substrate W against the side wall 211s by centrifugal force due to rotation, thereby suppressing its movement.

[0089] Furthermore, the recess 211c is formed in a circular shape in a plan view, and the center of the recess 211c is offset from the rotation center of the mounting table 211A. This allows the substrate processing apparatus 1 to dispose the center Wo of the substrate W at a position that is offset in advance from the rotation center of the mounting table 211, thereby reducing the amount of movement of the substrate W while ensuring the rotation radius, thereby further reducing particles.

[0090] The recess 211c is formed in an elliptical shape in a plan view, which allows the substrate processing apparatus 1 to easily move the substrate W in the major axis direction within the recess 211c of the mounting table 211B, thereby facilitating fixation of the substrate W within the mounting table 211B.

[0091] A second aspect of the present disclosure is a substrate processing method for a substrate processing apparatus including a processing vessel 11, a turntable 21 rotatably provided within the processing vessel 11, and mounting tables 211, 211A, 211B that are rotatable integrally with the turntable 21 and are provided at a position away from the rotation center of the turntable 21 so as to be rotatable relative to the turntable 21, wherein in a step of simultaneously rotating the turntable 21 and the mounting tables 211, the rotational centrifugal force generated by the rotation of the mounting tables 211, 211A, 211B is made larger than the revolutionary centrifugal force generated by the rotation of the turntable 21. Even in this case, the substrate processing method can suppress particles.

[0092] The substrate processing apparatus 1 and the substrate processing method according to the presently disclosed embodiments are illustrative in all respects and are not limiting. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments can be configured differently and can be combined within the scope of the appended claims. [Explanation of symbols]

[0093] 1. Substrate processing equipment 11 Processing container 21 Rotating Table 90 Control Unit 211, 211A, 211B Mounting table W substrate

Claims

1. A processing vessel; a rotary table rotatably provided inside the processing vessel; a mounting table for mounting a substrate thereon, the mounting table being rotatable integrally with the turntable and rotatable relative to the turntable at a position spaced apart from the rotation center of the turntable; a control unit for controlling the rotation of the rotary table and the rotation of the mounting table, The control unit controlling the rotation of the rotary table and the rotation of the mounting table so that the rotational centrifugal force generated by the rotation of the mounting table is greater than the revolutionary centrifugal force generated by the rotation of the rotary table; Substrate processing equipment.

2. a rotation speed of the mounting table is faster than a revolution speed of the rotary table; The substrate processing apparatus according to claim 1 .

3. The rotation speed is 2.5 times or more the revolution speed. The substrate processing apparatus according to claim 2 .

4. the revolution speed is 40 rpm or more, The rotation speed is 10 times or more the revolution speed. The substrate processing apparatus according to claim 3 .

5. a rotation radius from the rotation center of the mounting table to the center of the substrate is 1 / 10 or less of a rotation radius from the rotation center of the rotary table to the rotation center of the mounting table; The substrate processing apparatus according to claim 1 .

6. the mounting table has a bottom wall on which the substrate is placed, and a side wall that protrudes from an outer edge of the bottom wall and is capable of coming into contact with the outer edge of the substrate, and the mounting table has a recess that is surrounded by the bottom wall and the side wall. The substrate processing apparatus according to claim 1 .

7. The recess is formed in a perfect circular shape in a plan view, and the center of the recess is offset from the rotation center of the mounting table. The substrate processing apparatus according to claim 6 .

8. The recess is formed in an elliptical shape in a plan view. The substrate processing apparatus according to claim 6 .

9. A processing vessel; a rotary table rotatably provided inside the processing vessel; a mounting table on which a substrate is placed, the mounting table being rotatable integrally with the turntable and rotatable relative to the turntable at a position away from a rotation center of the turntable, the substrate processing method comprising: In the step of simultaneously rotating the rotary table and the mounting table, a rotational centrifugal force generated by the rotation of the mounting table is made larger than a revolutionary centrifugal force generated by the rotation of the rotary table. Substrate processing method.

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