Substrate processing device

Abstract

To provide a substrate processing device capable of reducing variation in thickness of a film of processing liquid formed on a substrate.SOLUTION: A coating device 100 includes a nozzle block 150 and a pressure adjustment block 160. The nozzle block 150 has a slit-shaped discharge port 15a extending in a first direction. During coating processing of a substrate W, the nozzle block 150 moves relative to the substrate W in a second direction intersecting the first direction. The pressure adjustment block 160 has a slit-shaped gas injection port 25a extending in the first direction and is connected to the nozzle block 150. The pressure adjustment block 160 supplies gas supplied from a gas supply system 180 into a follow space FS through the gas injection port 25a, and increases a pressure of the follow space FS higher than a pressure of another space. The follow space FS is a space located below the nozzle block 150 and expands in a third direction opposite to the second direction relative to the discharge port 15a.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus that forms a film of a processing liquid on the upper surface of a substrate. [Background technology]

[0002] Substrate processing apparatuses are used to perform various processes on substrates such as semiconductor substrates, substrates for FPDs (Flat Panel Displays) such as liquid crystal display devices or organic EL (Electro Luminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

[0003] As an example of a substrate processing apparatus, Patent Document 1 describes a rotary substrate processing apparatus that forms a resist film on a substrate. In this substrate processing apparatus, a resist liquid is supplied to the center of a substrate that is held in a horizontal position and rotates. The supplied resist liquid spreads toward the peripheral edge of the substrate, forming a film of the resist liquid over the entire upper surface of the substrate. The substrate with the resist liquid film formed thereon is subjected to a predetermined process such as a drying process. As a result, a resist film is formed on the upper surface of the substrate.

[0004] As described above, the method of forming a film of processing liquid (resist liquid) on the upper surface of a rotating substrate by supplying the processing liquid to the upper surface of the substrate is called spin coating. In spin coating, the processing liquid is spread over the entire upper surface of the rotating substrate using centrifugal force, so some of the processing liquid supplied to the substrate is scattered outside the substrate. Therefore, spin coating has limitations on the efficiency of processing liquid utilization.

[0005] In addition to the spin coating method described above, there is also a method called capillary coating, which uses a nozzle with a slit-shaped outlet (hereinafter referred to as a slit nozzle) to form a film of the treatment liquid on a substrate. The capillary coating method forms a gap between the slit nozzle and the substrate, and the treatment liquid fills the gap, causing capillary action to occur, which draws the treatment liquid from the slit-shaped outlet onto the substrate (see, for example, Patent Document 2).

[0006] In the capillary coating method, the processing liquid is drawn onto the substrate from the discharge port under the condition that capillary action occurs, and therefore the capillary coating method has a higher utilization efficiency of the processing liquid than the spin coating method. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Publication No. 2019-046850 [Patent Document 2] Japanese Patent Application Laid-Open No. 2017-148769 Summary of the Invention [Problem to be solved by the invention]

[0008] However, in the capillary coating method, the processing liquid drawn from the slit nozzle is directly applied to each portion of the substrate, making it difficult to control the film thickness when the positional relationship between the slit nozzle and the substrate changes significantly. For example, when the processing liquid is applied to the substrate and the slit nozzle is removed from the substrate, the processing liquid film formed on the substrate is likely to accumulate in the area where the slit nozzle is removed. Therefore, the thickness of the processing liquid film formed in the area where the slit nozzle is removed tends to be larger than the thickness of the other areas.

[0009] Therefore, the variation in thickness of a coating film formed on a substrate by capillary coating is greater than the variation in thickness of a coating film formed on a substrate by spin coating.

[0010] The slit nozzle has a storage space formed therein that stores the treatment liquid and is connected to the discharge port. To reduce variations in the thickness of the coating film, it is conceivable to adjust the pressure in the storage space and thereby adjust the amount of treatment liquid discharged from the slit nozzle. However, this type of control requires complex setup work and is difficult to achieve in practice.

[0011] An object of the present invention is to provide a substrate processing apparatus capable of reducing variations in the thickness of a film of a processing liquid formed on a substrate. [Means for solving the problem]

[0012] A substrate processing apparatus according to one aspect of the present invention includes a substrate holding unit that holds a substrate, a liquid nozzle having a slit-shaped outlet extending in a first direction parallel to the substrate held by the substrate holding unit and that ejects a processing liquid from the outlet, a relative movement unit that supports the substrate holding unit and the liquid nozzle and is configured to be able to move at least one of the substrate holding unit and the liquid nozzle, a control unit that performs relative movement control and controls the relative movement unit so that the liquid nozzle ejects processing liquid onto the substrate while moving through a space above the substrate in a second direction that is parallel to the substrate and intersects the first direction, and a pressure adjustment unit that has a slit-shaped gas injection port that extends in the first direction and that, during the relative movement control, injects gas from the gas injection port into a tracking space that extends from the outlet in a third direction opposite to the second direction on a film of processing liquid ejected onto the substrate, thereby increasing the pressure in the tracking space above the pressure in other spaces.

[0013] A substrate processing apparatus according to another aspect of the present invention includes a substrate holding unit that holds a substrate, a liquid nozzle having a slit-shaped outlet extending in a first direction parallel to the substrate held by the substrate holding unit and that ejects a processing liquid from the outlet, a relative movement unit that supports the substrate holding unit and the liquid nozzle and is configured to be able to move at least one of the substrate holding unit and the liquid nozzle, a control unit that performs relative movement control that controls the relative movement unit so that the liquid nozzle ejects processing liquid onto the substrate while moving through a space above the substrate in a second direction parallel to the substrate and intersecting the first direction, and a pressure adjustment unit that has a buffer space that receives gas supplied from a gas supply system and that, during the relative movement control, supplies gas in the buffer space to a tracking space that extends from the outlet in a third direction opposite to the second direction on a film of processing liquid ejected onto the substrate, thereby increasing the pressure in the tracking space above the pressure in other spaces. [Effects of the Invention]

[0014] According to the present invention, it is possible to reduce variations in the thickness of the film of the processing liquid formed on the substrate. [Brief explanation of the drawings]

[0015] [Figure 1] 1 is a schematic perspective view of an external appearance of a substrate processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a perspective view showing the appearance of a nozzle block and a pressure adjustment block shown in FIG. [Figure 3] 3 is a bottom view of the nozzle block and the pressure adjustment block of FIG. 2, seen from a position below them. FIG. [Figure 4] 3 is a vertical cross-sectional view of the nozzle block and the pressure adjustment block of FIG. 2 cut along an imaginary plane of FIG. 2. [Figure 5] FIG. 4 is a vertical cross-sectional view illustrating the dimensions of the lower end portions of the nozzle block and the pressure adjustment block and their neighboring portions. [Figure 6] FIG. 2 is a diagram for explaining the functions of the pressure adjustment block and the gas supply system in FIG. [Figure 7] 2 is a block diagram showing the configuration of a control system of the substrate processing apparatus of FIG. 1. FIG. [Figure 8] FIG. 10 is a vertical cross-sectional view showing a first example of a pressure adjustment block according to another embodiment. [Figure 9] 9 is a rear view of the pressure adjustment block of FIG. 8 as seen from the rear of the coating apparatus. [Figure 10] FIG. 10 is a rear view showing a second example of a pressure adjustment block according to another embodiment. [Figure 11] FIG. 10 is a vertical cross-sectional view showing a third example of a pressure adjustment block according to another embodiment. [Figure 12] FIG. 10 is a vertical cross-sectional view of a nozzle block according to another embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0016] A substrate processing apparatus according to one embodiment of the present invention will be described below with reference to the drawings. In the following description, the term "substrate" refers to a substrate for a flat panel display (FPD) used in a liquid crystal display device or an organic electroluminescence (EL) display device, a semiconductor substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, or a solar cell substrate. The substrate described below has a circular shape in plan view, excluding the portion where a notch is formed.

[0017] 1. Outline of the substrate processing equipment Fig. 1 is a schematic perspective view of the exterior of a substrate processing apparatus according to a first embodiment. As shown in Fig. 1, the substrate processing apparatus 1 according to this embodiment includes a coating apparatus 100, a control unit 110, a processing liquid supply system 170, and a gas supply system 180, and is housed in a housing (not shown). In Fig. 1 and certain subsequent figures, arrows indicating mutually orthogonal X, Y, and Z directions are used to clarify the positional relationships. The X and Y directions are orthogonal to each other in a horizontal plane, and the Z direction corresponds to the up-down direction (vertical direction).

[0018] The coating apparatus 100 is configured to enable a coating process for forming a film of a processing liquid on a substrate W, and includes two stage supports 120, a stage device 130, two nozzle supports 140, a nozzle block 150, and a pressure adjustment block 160. In this embodiment, the processing liquid used in the coating apparatus 100 is a coating liquid for a resist film (resist liquid) or a coating liquid for an anti-reflection film (anti-reflection liquid). The substrate W to be coated in the coating apparatus 100 of this example has a diameter of approximately 300 mm.

[0019] Each of the two stage supports 120 of the coating apparatus 100 has a generally rectangular parallelepiped shape extending in one direction and is provided on the bottom surface of a housing (not shown) so as to extend along the X direction. The two stage supports 120 are arranged side by side in the Y direction. A guide rail 121 extending along the longitudinal direction of the stage support 120 is provided on the upper surface of each stage support 120. In the following description, the direction from one end ta of the stage support 120 to the other end tb thereof will be referred to as the front of the coating apparatus 100, and the direction from the other end tb of the stage support 120 to the one end ta thereof will be referred to as the rear of the coating apparatus 100.

[0020] The stage device 130 is located between the two stage supports 120 in the Y direction and is supported by the two stage supports 120. The stage device 130 includes a plate member 131, an absorption chuck 132, a plurality of (three in this example) support pins 133, a pin lifting / lowering drive unit 134, and a suction drive unit 135.

[0021] The plate member 131 is formed of, for example, a rectangular flat plate-like member, and constitutes the upper surface portion of the stage device 130. A disk-shaped suction chuck 132 is provided in the center of the plate member 131 so as to protrude a predetermined distance (height) upward from the plate member 131. The suction chuck 132 has an upper surface formed so that the substrate W can be placed thereon.

[0022] A plurality of pin insertion holes (not shown) are formed in a plurality of portions of the plate member 131 that are near the suction chuck 132 and surround the suction chuck 132 in a plan view, so as to penetrate the plate member 131 in the Z direction.

[0023] The pin lifting / lowering drive unit 134 and the suction drive unit 135 are provided below the plate member 131. The multiple support pins 133 are supported by the pin lifting / lowering drive unit 134 so as to extend in the Z direction and overlap with the multiple pin insertion holes in a plan view. The pin lifting / lowering drive unit 134 moves the multiple support pins 133 in the Z direction under the control of the control unit 110. As a result, the upper ends of the multiple support pins 133 move through the multiple pin insertion holes between a pin-up position above the suction chuck 132 and a pin-down position below the plate member 131.

[0024] When the substrate W is carried into the substrate processing apparatus 1, the upper ends of the multiple support pins 133 are held in the pin up position. In this state, an unprocessed substrate W is placed on the multiple support pins 133. Thereafter, the upper ends of the multiple support pins 133 are lowered to the pin down position, whereby the substrate W is placed on the suction chuck 132. On the other hand, when the substrate W is carried out from the substrate processing apparatus 1, the upper ends of the multiple support pins 133 are raised from the pin down position to the pin up position, whereby the substrate W on the suction chuck 132 is supported on the multiple support pins 133. With the upper ends of the multiple support pins 133 in the pin up position, the processed substrate W supported on the multiple support pins 133 is received by a transport device (not shown). Furthermore, when the substrate W is subjected to a coating process in the substrate processing apparatus 1, the upper ends of the multiple support pins 133 are held in the pin down position.

[0025] A plurality of air intake holes (not shown) are formed on the upper surface of the suction chuck 132. The plurality of air intake holes are connected to exhaust equipment in the factory through a suction drive unit 135 and an air intake system (not shown). The suction drive unit 135 switches the air intake path formed between the plurality of air intake holes and the air intake system between an open state and a closed state under the control of the control unit 110. With this configuration, the suction drive unit 135 opens the air intake path when the substrate W is placed on the suction chuck 132. This allows the substrate W to be sucked and held on the suction chuck 132. Furthermore, the suction drive unit 135 closes the air intake path when the substrate W is sucked and held on the suction chuck 132. This allows the substrate W to be released from the suction chuck 132.

[0026] Two nozzle supports 140 are provided on the upper surfaces of the two stage supports 120, respectively. The two nozzle supports 140 are arranged side by side in the Y direction. Each of the two nozzle supports 140 is movable in the X direction (the front-to-rear direction of the coating apparatus 100) along a guide rail 121 of the stage support 120 on which the nozzle support 140 is provided.

[0027] The nozzle block 150 and the pressure adjustment block 160 are located between the two nozzle supports 140 in the Y direction and are supported by the two nozzle supports 140. At least one of the two nozzle supports 140 has an X-direction drive unit 141 and a Z-direction drive unit 142 built in.

[0028] The nozzle block 150 is made of metal or resin and has a generally rectangular parallelepiped shape that extends in one direction. The pressure adjustment block 160 is also made of metal or resin and has a generally rectangular parallelepiped shape that extends in one direction. The nozzle block 150 and the pressure adjustment block 160 are connected so as to be lined up in this order from the front to the rear of the coating apparatus 100.

[0029] The nozzle block 150 is connected to a pipe 171 that constitutes a part of the processing liquid supply system 170. The pressure adjustment block 160 is connected to a pipe 181 that constitutes a part of the gas supply system 180. A discharge port 15a (FIG. 3) that discharges the processing liquid onto the substrate W is formed at the lower end of the nozzle block 150. A gas ejection port 25a (FIG. 3) that adjusts the pressure of a space located behind the lower end of the nozzle block 150 (a tracking space FS (FIG. 5) described later) is formed at the lower end of the pressure adjustment block 160. The nozzle block 150 and the pressure adjustment block 160 will be described in detail later.

[0030] The X-direction driving unit 141 includes an actuator such as a motor, and moves the nozzle support 140 in the X direction on the guide rails 121 of the stage support 120. The Z-direction driving unit 142 includes an actuator such as a motor, and moves the nozzle block 150 and the pressure adjustment block 160 supported by the nozzle support 140 in the Z direction.

[0031] The processing liquid supply system 170 includes a liquid supply device 172 in addition to the above-described piping 171. The processing liquid supply system 170 further includes fluid-related devices (not shown) including a processing liquid supply source, one or more pipes, joints, valves, etc. The liquid supply device 172 is, for example, a pump, and supplies processing liquid from a processing liquid supply source (not shown) to the nozzle block 150 through the piping 171.

[0032] The gas supply system 180 includes a gas supply device 182 in addition to the above-mentioned piping 181. Furthermore, the gas supply system 180 includes fluid-related devices (not shown) including a gas supply source, one or more pipes, joints, valves, etc. The gas supply device 182 is, for example, a compressor, and supplies gas from a gas supply source (not shown) to the pressure adjustment block 160 through the piping 181 during coating processing of the substrate W.

[0033] In this embodiment, nitrogen gas is used as the gas supplied from the gas supply system 180 to the pressure adjustment block 160. Note that instead of nitrogen gas, an inert gas such as argon gas or helium gas can also be used as the gas supplied to the pressure adjustment block 160. Alternatively, air that has been purified through a filter can also be used as the gas supplied to the pressure adjustment block 160. The control unit 110 controls the operation of each unit of the substrate processing apparatus 1. Details of the control unit 110 will be described later.

[0034] In the substrate processing apparatus 1 having the above configuration, during coating processing of the substrate W, the nozzle block 150 is brought close to the upper surface of the substrate W while the substrate W is held by suction on the suction chuck 132. In this state, the nozzle block 150 moves in the X direction from rear to front in the space above the substrate W. At this time, the position in the Z direction (height position) of the nozzle block 150 is adjusted so that the processing liquid in the nozzle block 150 is drawn (discharged) from the discharge port 15a (FIG. 3) into the gap between the nozzle block 150 and the substrate W by capillary action. This method of supplying the coating liquid from the nozzle discharge port onto the substrate W by utilizing capillary action is called a capillary coating method.

[0035] 2. Details of the nozzle block 150 and pressure adjustment block 160 Fig. 2 is an external perspective view of the nozzle block 150 and the pressure adjustment block 160 of Fig. 1. Fig. 3 is a bottom view of the nozzle block 150 and the pressure adjustment block 160 of Fig. 2 as seen from a position below them. Also, Fig. 4 is a vertical cross-sectional view of the nozzle block 150 and the pressure adjustment block 160 of Fig. 2 taken along imaginary plane VS of Fig. 2.

[0036] 2, the nozzle block 150 has a front surface 13 and a rear surface 14 extending in the Y direction. The front surface 13 is a rectangular flat surface facing the front of the coating apparatus 100, and the rear surface 14 is a rectangular flat surface facing the rear of the coating apparatus 100. The nozzle block 150 also has an upper end surface 12 connecting the upper end of the front surface 13 with the upper end of the rear surface 14. The nozzle block 150 also has a substrate-facing surface 11a, a front inclined surface 11b, and a rear inclined surface 11c.

[0037] 4, the front inclined surface 11b extends rearward and diagonally downward from the lower end of the front surface 13 when viewing the nozzle block 150 in the Y direction. On the other hand, the rear inclined surface 11c extends forward and diagonally downward from the lower end of the rear surface 14 when viewing the nozzle block 150 in the Y direction. The substrate-facing surface 11a is the lower end surface of the nozzle block 150 and is parallel to the horizontal plane. A slit-shaped discharge port 15a extending in the Y direction is formed in the substrate-facing surface 11a.

[0038] As shown in FIG. 2 , the pressure adjustment block 160 has a front surface 23 and a rear surface 24 extending in the Y direction. The pressure adjustment block 160 is connected to the rear portion of the nozzle block 150. The front surface 23 of the pressure adjustment block 160 is a rectangular flat surface facing the front of the coating apparatus 100. The front surface 23 is in contact with the rear surface 14 of the nozzle block 150 when the nozzle block 150 and the pressure adjustment block 160 are connected. The rear surface 24 of the pressure adjustment block 160 is a rectangular flat surface facing the rear of the coating apparatus 100.

[0039] The pressure adjustment block 160 also has an upper end surface 22 that connects the upper end of the front surface 23 to the upper end of the rear surface 24. The pressure adjustment block 160 also has a substrate-facing surface 21 that connects the lower end of the front surface 23 to the lower end of the rear surface 24. The substrate-facing surface 21 is the lower end surface of the pressure adjustment block 160 and is parallel to the horizontal plane. As shown in FIG. 4, the substrate-facing surface 21 has a slit-shaped gas injection port 25a that extends in the Y direction.

[0040] 3, the nozzle block 150 and the pressure adjustment block 160 have the same or approximately the same length in the Y direction. Furthermore, the discharge port 15a of the nozzle block 150 and the gas ejection port 25a of the pressure adjustment block 160 also have the same or approximately the same length in the Y direction. The discharge port 15a extends parallel to the Y direction from near one end of the nozzle block 150 to near the other end. The gas ejection port 25a extends parallel to the Y direction from near one end of the pressure adjustment block 160 to near the other end. Furthermore, each of the discharge port 15a and the gas ejection port 25a has a constant width in the X direction.

[0041] As shown in Fig. 4, a discharge liquid flow path 15b and a storage section 15c are formed inside the nozzle block 150. The storage section 15c is formed so as to be able to store a certain amount of the processing liquid supplied through the piping 171 of Fig. 1. A discharge liquid flow path 15b is formed from the storage section 15c to the discharge port 15a. As a result, the internal space of the storage section 15c communicates with the space below the nozzle block 150 (the external space of the nozzle block 150) through the discharge liquid flow path 15b and the discharge port 15a.

[0042] A gas flow path 25b and a buffer section 25c are formed inside the pressure adjustment block 160. The buffer section 25c is formed so as to be able to receive a certain amount of gas supplied through the piping 181 in Fig. 1. As indicated by the dotted line in Fig. 3, the buffer section 25c extends parallel to the Y direction inside the pressure adjustment block 160 from near one end of the pressure adjustment block 160 to near the other end of the pressure adjustment block 160.

[0043] As shown in Fig. 4, a gas flow path 25b is formed from the buffer portion 25c to the gas ejection port 25a. In this embodiment, the gas flow path 25b has a constant flow path cross section from the buffer portion 25c to the gas ejection port 25a. With this configuration, the internal space of the buffer portion 25c communicates with the space below the pressure adjustment block 160 (the external space of the pressure adjustment block 160) through the gas flow path 25b and the gas ejection port 25a. As shown in Figs. 2 to 4, a gas introduction hole 29 is formed in the rear surface 24, which communicates the space within the buffer portion 25c with the space behind the pressure adjustment block 160.

[0044] 1 is connected to a portion of the rear surface 24 of the pressure adjustment block 160 where the gas introduction hole 29 is formed. As a result, when the gas supply device 182 of FIG. 1 is in operation, the gas supplied from the gas supply system 180 to the pressure adjustment block 160 is injected from the gas injection port 25a through the gas introduction hole 29, the buffer portion 25c, and the gas flow path 25b into a following space FS (FIG. 5) described later.

[0045] 3. Dimensions of each part of the nozzle block 150 and the pressure adjustment block 160 Fig. 5 is a vertical cross-sectional view for explaining the dimensions of the lower ends and the vicinity thereof of the nozzle block 150 and the pressure adjustment block 160. Like the vertical cross-sectional view of Fig. 4, the vertical cross-sectional view of Fig. 5 is a cross-sectional view of the nozzle block 150 and the pressure adjustment block 160 of Fig. 2 taken along the imaginary plane VS of Fig. 2.

[0046] Here, the width of the discharge port 15a in the X direction is referred to as the discharge width G11, and the width of the gas jet port 25a in the X direction is referred to as the jet width G12. Furthermore, the size of the gap formed between the substrate W and the substrate facing surface 11a of the nozzle block 150 during the coating process of the substrate W is referred to as the gap G01. The size of the gap formed between the substrate W and the substrate facing surface 21 of the pressure adjustment block 160 during the coating process of the substrate W is referred to as the gap G02. In Figure 5, part of the outline of the substrate W during the coating process is indicated by a dashed line.

[0047] As described above, in the substrate processing apparatus 1 according to this embodiment, the coating process of the substrate W is performed by the capillary coating method. Therefore, the discharge width G11 is determined so that the processing liquid stored in the storage portion 15c does not leak out of the discharge port 15a when the storage portion 15c is not pressurized (for example, when the storage portion 15c is maintained at atmospheric pressure). The discharge width G11 is, for example, 40 μm or more and 100 μm or less.

[0048] During the coating process on the substrate W, the gap G01 is adjusted so that a capillary force is generated that draws the treatment liquid in the reservoir 15c into the gap between the substrate facing surface 11a and the substrate W. The gap G01 for generating the capillary force can be calculated in advance depending on the type, density, viscosity, and temperature of the treatment liquid.

[0049] The pressure adjustment block 160 is connected to the rear surface 14 of the nozzle block 150 so that the height position of the substrate facing surface 21 coincides with the height position of the lower end of the front surface 23. Therefore, the gap G02 during the coating process of the substrate W is larger than the gap G01. In this embodiment, the distance D01 in the Z direction between the substrate facing surface 11 a of the nozzle block 150 and the substrate facing surface 21 of the pressure adjustment block 160 (the difference in height positions between the two substrate facing surfaces 11 a, 21) is, for example, 0.4 mm or more and 5 mm or less.

[0050] 5, during coating processing of the substrate W, a space surrounded by the rear inclined surface 11c, the substrate facing surface 21, and the upper surface of the substrate W is formed so as to extend rearward from the discharge port 15a of the nozzle block 150. In other words, during coating processing of the substrate W, a space extending rearward from the discharge port 15a of the nozzle block 150 is formed below the nozzle block 150 and the pressure adjustment block 160. This space is called a following space FS. Furthermore, during coating processing of the substrate W, a space partitioned from the following space FS by the nozzle block 150 and the processing liquid is formed in front of the discharge port 15a of the nozzle block 150. This space is called a preceding space AS.

[0051] The gas ejection port 25a of the pressure adjustment block 160 faces the tracking space FS. The distance D02 in the X direction between the discharge port 15a of the nozzle block 150 and the gas ejection port 25a of the pressure adjustment block 160 is, for example, 1500 μm or more and 10000 μm or less. Furthermore, the gas flow path 25b of the pressure adjustment block 160 is inclined, for example, within a range of 30° to 90° with respect to the horizontal plane, so as to extend diagonally forward and downward from the buffer portion 25c when viewed in the Y direction.

[0052] In the substrate processing apparatus 1 according to this embodiment, during coating processing of the substrate W, gas is injected from the gas supply system 180 into the follow-up space FS through the pressure adjustment block 160. This adjusts the pressure in the follow-up space FS to be higher than the pressure in the other spaces, such as the pressure in the preceding space AS.

[0053] 4. Functions of the pressure adjustment block 160 and the gas supply system 180 In the following description, the frontmost portion of the outer edge (outer peripheral end portion) of the substrate W that is sucked and held by the suction chuck 132 in the substrate processing apparatus 1 of Fig. 1 will be referred to as the front end portion of the substrate W. Also, the rearmost portion of the outer edge (outer peripheral end portion) of the substrate W that is sucked and held by the suction chuck 132 in the substrate processing apparatus 1 of Fig. 1 will be referred to as the rear end portion of the substrate W.

[0054] The pressure adjustment block 160 and the gas supply system 180 are provided to prevent the formation of pools of processing liquid at the front end of the substrate W and its surrounding area when the nozzle block 150 moves away from the substrate W in the final stage of the coating process.

[0055] Fig. 6 is a diagram for explaining the functions of the pressure adjustment block 160 and the gas supply system 180 in Fig. 1. In Fig. 6, changes in the state of the processing liquid in the final stage of the coating process are shown in chronological order using four vertical cross-sectional views.

[0056] Each vertical cross-sectional view in Figure 6 corresponds to a portion of a vertical cross-sectional view of the coating apparatus 100 in Figure 1 taken along a vertical plane extending in the X direction and passing through the center of the substrate W. In each vertical cross-sectional view, to make it easier to understand the changes in the state of the processing liquid, hatching indicating the cross sections of the nozzle block 150, the pressure adjustment block 160, and the substrate W is omitted, and a dot pattern is applied only to the processing liquid. In addition, the dimensions of the gap between the substrate-facing surface 11a of the nozzle block 150 and the substrate W are exaggerated.

[0057] During the coating process on the substrate W, the nozzle block 150 moves at a constant speed in the X direction from a position behind the substrate W to a position in front of the substrate W. This causes the processing liquid to be spread over the top surface of the substrate W from the rear end of the substrate W to the front end We.

[0058] 6 shows the state of the processing liquid when the nozzle block 150 is positioned behind the front end We of the substrate W, more specifically, the state of the processing liquid when the front surface 13 of the nozzle block 150 is positioned slightly behind the front end We of the substrate W. In this state, a capillary force is generated in the gap between the substrate facing surface 10 and the substrate W. As a result, the processing liquid in the storage portion 15c is drawn onto the substrate W through the discharge liquid flow path 15b and the discharge port 15a. The drawn processing liquid also fills the gap between the entire substrate facing surface 11a and the substrate W.

[0059] 1 supplies gas to the pressure adjustment block 160 during coating processing of the substrate W. In the pressure adjustment block 160, the gas supplied from the gas supply system 180 is received by the buffer section 25c through the gas introduction hole 29. As the supply of gas to the buffer section 25c continues, the gas in the buffer section 25c is injected from the gas injection port 25a through the gas flow path 25b into the tracking space FS, as shown by the thick solid arrow in the cross-sectional view in the top row of FIG.

[0060] With the processing liquid filling the space between the nozzle block 150 and the substrate W, the following space FS is separated from the preceding space AS in the X direction by at least the nozzle block 150 and the processing liquid. Therefore, the pressure in the following space FS is maintained higher than the pressure in the preceding space AS by the gas injected from the gas injection port 25a.

[0061] 6 shows the state of the processing liquid when the discharge port 15a of the nozzle block 150 is positioned slightly forward of the front end We of the substrate W. As the discharge port 15a of the nozzle block 150 moves forward of the front end We, the meniscus of the processing liquid formed between the substrate facing surface 11a and the substrate W becomes larger, and a liquid column of the processing liquid is formed between the nozzle block 150 and the substrate W.

[0062] 6 shows the state of the processing liquid when the entire substrate-facing surface 11a of the nozzle block 150 is positioned slightly forward of the front end We of the substrate W. In this case, as the substrate-facing surface 11a of the nozzle block 150 moves away from the substrate W, the liquid column between the nozzle block 150 and the substrate W becomes thinner when viewed in the Y direction. In other words, the area of ​​the cross section of the liquid column (the cross section of the liquid column perpendicular to the direction in which the liquid column extends) becomes smaller. In this state, the pressure in the follow-up space FS is maintained higher than the pressure in the preceding space AS.

[0063] 6, when the nozzle block 150 moves further forward, the liquid column between the nozzle block 150 and the substrate W is broken up by the pressure in the tracking space FS. At this time, the atmosphere in the tracking space FS flows out with great force into spaces other than the tracking space FS, passing near the front end We of the substrate W. As a result, the excess processing liquid present between the nozzle block 150 and the substrate W, i.e., most of the processing liquid that formed the liquid column, is blown off from the surface of the nozzle block 150 and the substrate W together with the gas flowing out from the tracking space FS. As a result, the formation of a pool of processing liquid, as indicated by the dotted line, at the front end We of the substrate W and its vicinity is suppressed.

[0064] 5. Control system of substrate processing apparatus 1 7 is a block diagram showing the configuration of a control system of the substrate processing apparatus 1 of FIG. 1. As described above, the substrate processing apparatus 1 includes a control unit 110. The control unit 110 includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), and a storage device. The RAM is used as a working area for the CPU. The ROM stores a system program. The storage device stores a coating processing program for performing a coating process on a substrate W.

[0065] 7, the control unit 110 includes, as functional units for controlling the operation of each unit of the substrate processing apparatus 1, a nozzle movement control unit 111, a discharge control unit 112, a stage control unit 113, a pressure control unit 114, and a condition setting unit 115. The functional units of the control unit 110 are realized by a CPU executing a coating processing program stored in a storage device on a RAM. Some or all of the functional units of the control unit 110 may be realized by hardware such as an electronic circuit.

[0066] One or more predetermined processing conditions are stored in the condition setting unit 115. In the present embodiment, the one or more processing conditions include "the moving speed of the nozzle block," "the moving direction of the nozzle block," "the gap between the nozzle block and the substrate," and "gas injection conditions."

[0067] The "movement speed of the nozzle block" is the movement speed at which the nozzle block 150 moves in the front-to-rear direction of the coating apparatus 100 relative to the substrate W during the coating process. This movement speed is set to, for example, 0.02 m / sec. The "movement direction of the nozzle block" is the direction in which the nozzle block 150 moves relative to the substrate processing apparatus 1 during the coating process, and in this embodiment, is the direction from the rear of the coating apparatus 100 to the front of the coating apparatus 100.

[0068] The "gap distance between the nozzle block and the substrate" is the distance G01 in FIG. 5 that should be adjusted during the coating process. This distance G01 is set to, for example, 70 μm. The "gas injection conditions" include the period (injection time) during which gas should be injected from the gas injection port 25 a of the pressure adjustment block 160. The period during which gas should be injected from the gas injection port 25 a may be, for example, the period during which the coating process of the substrate W is performed, or may be a part of the period during which the coating process of the substrate W is performed.

[0069] The substrate processing apparatus 1 further includes an operation unit 290. The operation unit 290 includes, for example, a keyboard and a pointing device, and is configured to be operable by a user. The user can input one or more processing conditions for the coating processing of the substrate W by operating the operation unit 290. When the processing conditions are input, the condition setting unit 115 updates the processing conditions previously stored with the input processing conditions.

[0070] The nozzle movement control unit 111 controls the X-direction driving unit 141 and the Z-direction driving unit 142 based on various processing conditions set by the condition setting unit 115 during coating processing of the substrate W. For example, the nozzle movement control unit 111 controls the Z-direction driving unit 142 so that a gap of a set interval is formed between the nozzle block 150 and the substrate W during coating processing of the substrate W. Furthermore, the nozzle movement control unit 111 controls the X-direction driving unit 141 so that the nozzle block 150 moves in a set movement direction at a set movement speed during coating processing of the substrate W.

[0071] The discharge control unit 112 controls the processing liquid supply system 170 so that the processing liquid is supplied to the nozzle block 150 during coating processing of the substrate W. The stage control unit 113 controls the pin lifting / lowering drive unit 134 and the suction drive unit 135. As a result, the pin lifting / lowering drive unit 134 moves the plurality of support pins 133 up and down, for example, when the substrate W is loaded into and unloaded from the coating apparatus 100. The suction drive unit 135 suction-holds the substrate W on the suction chuck 132. The suction drive unit 135 also releases the substrate W suction-held on the suction chuck 132. The pressure control unit 114 controls the gas supply system 180 based on the gas ejection conditions set by the condition setting unit 115.

[0072] 6.Effects In the substrate processing apparatus 1, during coating processing of the substrate W, the processing liquid is efficiently supplied from the nozzle block 150 to the upper surface of the substrate W by the capillary coating method. Therefore, wasteful consumption of the processing liquid is suppressed compared to the spin coating method.

[0073] Here, during coating processing of the substrate W, after a film of the processing liquid is formed over the entire upper surface of the substrate W, the nozzle block 150 continues to move forward of the coating apparatus 100. As a result, the nozzle block 150 gradually moves away from the substrate W. At this time, an excessive amount of processing liquid is likely to remain as a liquid puddle at the front end We of the substrate W.

[0074] Therefore, the substrate processing apparatus 1 is equipped with a pressure adjustment block 160 and a gas supply system 180. During coating processing of the substrate W, gas is supplied from the gas supply system 180 to the following space FS through the pressure adjustment block 160. As a result, the pressure in the following space FS is made higher than the pressure in other spaces, including the preceding space AS. In this case, when the liquid column of processing liquid connecting the nozzle block 150 and the substrate W is broken in the final stage of the coating processing, the atmosphere in the following space FS flows out with great force toward the preceding space AS and the space below the substrate W. As a result, excess processing liquid, together with gas flowing out from the following space FS, is blown off from the surface of the nozzle block 150 and from above the substrate W.

[0075] The pressure in the tracking space FS is adjusted by gas injected from the gas injection port 25a of the pressure adjustment block 160. Here, the gas injection port 25a is formed in the shape of a slit extending in the Y direction. Therefore, gas is injected into the tracking space FS over a wide range in the Y direction. In this case, the pressure distribution in the tracking space FS in the Y direction is less likely to vary significantly compared to when gas is injected locally into a part of the tracking space FS. Therefore, it is possible to prevent an inappropriate amount of processing liquid from being removed due to variations in the pressure distribution in the tracking space FS. Alternatively, it is possible to prevent an excessive amount of processing liquid from being removed due to variations in the pressure distribution in the tracking space FS.

[0076] Furthermore, the pressure in the tracking space FS is adjusted by supplying gas from the buffer section 25c. In the buffer section 25c, pressure fluctuations of the gas flowing through the gas supply system 180 are buffered. In this case, large fluctuations in the pressure in the tracking space FS are suppressed compared to when gas is directly supplied to the tracking space FS from the gas supply system 180. Therefore, it is possible to suppress an inappropriate amount of processing liquid from being removed due to pressure fluctuations in the tracking space FS. Alternatively, it is possible to suppress an excessive amount of processing liquid from being removed due to pressure fluctuations in the tracking space FS.

[0077] As a result, it is possible to reduce variations in the thickness of the film of the processing liquid formed on the substrate W.

[0078] 7. Other Embodiments (a) In the substrate processing apparatus 1 according to the above embodiment, the pressure adjustment block 160 has the buffer portion 25c, but the present invention is not limited to this. The pressure adjustment block 160 does not necessarily have to have the buffer portion 25c.

[0079] Fig. 8 is a vertical cross-sectional view showing a first example of a pressure adjustment block 160 according to another embodiment. Fig. 9 is a rear view of the pressure adjustment block 160 of Fig. 8 as seen from the rear of the coating apparatus 100. The vertical cross-sectional view of Fig. 8 corresponds to the vertical cross-sectional view of Fig. 4. Therefore, Fig. 8 shows a vertical cross-sectional view of the nozzle block 150 as well as a vertical cross-sectional view of the pressure adjustment block 160.

[0080] 8, the pressure adjustment block 160 of this example does not have the buffer section 25c of FIG. 4. Therefore, the internal space of the gas introduction hole 29 and the internal space of the gas flow path 25b are directly connected. Furthermore, as shown by the dotted line in FIG. 9, the gas flow path 25b of this example is formed inside the pressure adjustment block 160 so as to expand in the Y direction from the front end (downstream end) of the gas introduction hole 29 toward the substrate facing surface 21.

[0081] Even in this configuration, the gas injection port 25a is formed in a slit shape extending in the Y direction. This prevents an inappropriate amount of processing liquid from being removed due to variations in the pressure distribution in the following space FS. Alternatively, it prevents an excessive amount of processing liquid from being removed due to variations in the pressure distribution in the following space FS.

[0082] (b) In the substrate processing apparatus 1 according to the above embodiment, the pressure adjustment block 160 has the slit-shaped gas injection port 25a, but the present invention is not limited to this. The gas injection port 25a of the pressure adjustment block 160 does not have to be formed in a slit shape.

[0083] Fig. 10 is a rear view showing a second example of a pressure adjustment block 160 according to another embodiment. As shown in Fig. 10, in the pressure adjustment block 160 of this example, a plurality of gas injection ports 25a are formed so as to be aligned in the Y direction on the substrate facing surface 21. In addition, a plurality of gas flow paths 25b are formed so as to connect the plurality of gas injection ports 25a and a buffer section 25c.

[0084] Even in this configuration, a buffer section 25c is formed inside the pressure adjustment block 160. As described above, the buffer section 25c buffers pressure fluctuations of the gas flowing through the gas supply system 180. This prevents an inappropriate amount of processing liquid from being removed due to pressure fluctuations in the tracking space FS. Alternatively, it prevents an excessive amount of processing liquid from being removed due to pressure fluctuations in the tracking space FS.

[0085] (c) In the substrate processing apparatus 1 according to the above embodiment, the pressure adjustment block 160 has one gas injection port 25a, one gas flow path 25b, and one buffer section 25c, but the present invention is not limited to this. The pressure adjustment block 160 may have multiple gas injection ports 25a, multiple gas flow paths 25b, and multiple buffer sections 25c.

[0086] Fig. 11 is a vertical cross-sectional view showing a third example of a pressure adjustment block 160 according to another embodiment. The vertical cross-sectional view of Fig. 11 corresponds to the vertical cross-sectional view of Fig. 4. Therefore, Fig. 11 shows a vertical cross-sectional view of the nozzle block 150 as well as the vertical cross-sectional view of the pressure adjustment block 160.

[0087] As shown in FIG. 11 , the pressure adjustment block 160 of this example has three buffer sections 25c. Each buffer section 25c extends parallel to the Y direction from near one end of the pressure adjustment block 160 to near the other end thereof. A gas introduction hole 29 is formed so as to extend from each buffer section 25c to the rear surface 24. Furthermore, three gas injection ports 25a are formed in the substrate facing surface 21 so as to correspond to the three buffer sections 25c, respectively. The three gas injection ports 25a are aligned in the X direction on the substrate facing surface 21. A gas flow path 25b is formed so as to connect the corresponding gas injection ports 25a and buffer sections 25c.

[0088] In this configuration, a plurality of pipes 181 are connected to the rear surface 24 of the pressure adjustment block 160 at portions where the plurality of gas introduction holes 29 are formed. In this case, the gas supply system 180 (FIG. 1) can selectively supply gas to any one of the plurality of pipes 181. This makes it possible to change the manner in which gas is supplied to the tracking space FS depending on the type of coating process being performed on the substrate W, etc. As a result, it becomes possible to finely adjust the pressure in the tracking space FS, and it becomes possible to further reduce variations in the thickness of the processing liquid film formed on the substrate W.

[0089] (d) In the substrate processing apparatus 1 according to the above embodiment, the pressure adjustment block 160 is provided to adjust the pressure in the tracking space FS, but the present invention is not limited to this. Structures corresponding to the gas injection ports 25a, gas flow paths 25b, buffer portions 25c, and gas introduction holes 29 of the pressure adjustment block 160 may be incorporated into the nozzle block 150. In this case, the pressure adjustment block 160 becomes unnecessary.

[0090] Fig. 12 is a longitudinal cross-sectional view of a nozzle block 150 according to another embodiment. Inside the nozzle block 150 of Fig. 12, in addition to a discharge liquid flow path 15b and a reservoir 15c for the treatment liquid, a buffer portion 16c for receiving gas from a gas supply system 180 is formed. A gas introduction hole 19 is formed so as to extend from the buffer portion 16c to the rear surface 14. Furthermore, a gas jet port 16a is formed in the substrate-facing surface 11a so as to correspond to the buffer portion 16c. The gas jet port 16a is located behind the discharge port 15a. A gas flow path 16b is formed so as to connect the corresponding gas jet ports 16a and the buffer portion 16c.

[0091] In this configuration, a pipe 181 is connected to the rear surface 14 of the nozzle block 150 at a portion where the gas inlet hole 19 is formed. A gas supply system 180 (FIG. 1) supplies gas to the pipe 181. As a result, during coating processing of the substrate W, gas is supplied to the tracking space FS through the gas inlet hole 19, the buffer section 16c, and the gas flow path 16b. As a result, similar to the example of the above embodiment, it is possible to reduce variations in the thickness of the film of processing liquid formed on the substrate W.

[0092] (e) The coating apparatus 100 according to the above embodiment may be provided with a configuration for changing the direction of gas ejected from the gas ejection port 25a of the pressure adjustment block 160. Specifically, the coating apparatus 100 may be provided with louvers (vanes extending in the Y direction) extending in the Y direction below the gas ejection port 25a. The coating apparatus 100 may also be provided with a drive unit for adjusting the orientation of the louvers. In this case, it becomes possible to change the manner in which gas is supplied to the tracking space FS depending on the type of coating process being performed on the substrate W. As a result, it becomes possible to finely adjust the pressure in the tracking space FS, thereby making it possible to further reduce variations in the thickness of the film of processing liquid formed on the substrate W.

[0093] (f) In the coating apparatus 100 according to the above embodiment, the pressure to be adjusted in the tracking space FS may be set as a target pressure as a "gas injection condition" by the condition setting unit 115 in Fig. 7. Furthermore, the coating apparatus 100 may be provided with a pressure sensor that detects the pressure in the tracking space FS during coating processing of the substrate W. In this case, the pressure control unit 114 may perform feedback control of the gas supply system 180 so that the output of the pressure sensor is maintained at the target pressure value set as the above-mentioned "gas ejection condition." This enables fine pressure adjustment in the tracking space FS, and makes it possible to further reduce variations in the thickness of the processing liquid film formed on the substrate W.

[0094] (g) In the substrate processing apparatus 1 according to the above embodiment, the nozzle block 150 and the pressure adjustment block 160 are connected to each other, but the present invention is not limited to this. The nozzle block 150 and the pressure adjustment block 160 may be supported by two nozzle supports 140 in a state where they are separated from each other.

[0095] (h) In the substrate processing apparatus 1 according to the above embodiment, the substrate W to be subjected to the coating process has a circular shape except for the portion where the notch is formed, but the present invention is not limited to this. The substrate W to be subjected to the coating process is not limited to a circular shape, and may also have a rectangular shape.

[0096] (i) In the coating apparatus 100 according to the above embodiment, a film of processing liquid is formed on the substrate W by moving the nozzle block 150 back and forth relative to the substrate W on the fixed suction chuck 132, but the present invention is not limited to this.

[0097] The coating apparatus 100 may be configured such that the suction chuck 132 is movable in the forward and backward directions. In this case, the suction chuck 132 may move in the forward and backward directions relative to the fixed nozzle block 150, thereby forming a film of the processing liquid on the substrate W that is held by suction on the suction chuck 132. Alternatively, the nozzle block 150 may move forward (or backward) and the suction chuck 132 may move backward (or forward) to form a film of the processing liquid on the substrate W.

[0098] (j) In the substrate processing apparatus 1 according to the above embodiment, the processing liquid is supplied from the nozzle block 150 onto the substrate W by utilizing capillary action that occurs in the gap between the nozzle block 150 and the substrate W, but the present invention is not limited to this. For example, the substrate processing apparatus 1 may be configured to supply the processing liquid onto the substrate W from the outlets 15a of the nozzle block 150 without utilizing capillary action. In this case, when the processing liquid is supplied from the nozzle block 150 to the substrate W, the distance between the nozzle block 150 and the substrate W can be increased to a degree that does not cause capillary action.

[0099] As described above, when capillary action is not utilized, the supply of the processing liquid from the nozzle block 150 to the substrate W is performed by adjusting (increasing) the pressure of the processing liquid inside the nozzle block 150. In this case, it is preferable to adjust the opening area of ​​the slit-shaped discharge port 15a to match the width of the substrate W while the nozzle block 150 is moving relative to the substrate W. In this way, the portion of the slit-shaped discharge port 15a that does not face the substrate W is appropriately blocked. This prevents the processing liquid from being discharged into an area where no substrate W is present, thereby preventing unnecessary consumption of the processing liquid.

[0100] 8. Correspondence between each part of the embodiment and each element of the claims The following describes examples of correspondence between the elements of the claims and the elements of the embodiments. Various other elements having the configurations or functions described in the claims may also be used as the elements of the claims.

[0101] In the above embodiment, the substrate processing apparatus 1 is an example of a substrate processing apparatus, the suction chuck 132 and the suction drive unit 135 are examples of a substrate holding unit, the Y direction is an example of a first direction, the outlet 15a is an example of an outlet, the nozzle block 150 is an example of a liquid nozzle, the two guide rails 121, the two nozzle supports 140, the X-direction drive unit 141 and the Z-direction drive unit 142 are examples of relative moving units, the direction in the X direction from the rear to the front of the coating apparatus 100 is an example of a second direction, and the control unit 110 is an example of a control unit.

[0102] Furthermore, gas injection port 25a is an example of a gas injection port, the direction in the X direction from the front to the rear of coating device 100 is an example of a third direction, following space FS is an example of a following space, pressure adjustment block 160 and gas supply system 180 are examples of pressure adjustment units, preceding space AS is an example of a preceding space, gas supply system 180 is an example of a gas supply system, buffer unit 25c is an example of a buffer unit, and gas flow path 25b is an example of a gas flow path.

[0103] 9. Summary of the embodiment (Item 1) The substrate processing apparatus according to item 1 comprises: a substrate holder that holds a substrate; a liquid nozzle having a slit-shaped discharge port extending in a first direction parallel to the substrate held by the substrate holding unit, and discharging a processing liquid from the discharge port; a relative movement unit configured to support the substrate holding unit and the liquid nozzle, respectively, and to be capable of moving at least one of the substrate holding unit and the liquid nozzle; a control unit that performs relative movement control to control the relative movement unit so that the liquid nozzle moves in a second direction parallel to the substrate and intersecting the first direction in a space above the substrate while discharging the processing liquid onto the substrate; and a pressure adjustment unit that has a slit-shaped gas injection port extending in the first direction, and that, during the relative movement control, injects gas from the gas injection port into a tracking space that spreads from the ejection port in a third direction opposite to the second direction on a film of processing liquid ejected onto the substrate, thereby making the pressure in the tracking space higher than the pressure in other spaces.

[0104] In the substrate processing apparatus, during relative movement control, the nozzle moves in a second direction in the space above the substrate while discharging the processing liquid from the slit-shaped outlet onto the substrate. This allows the processing liquid to be efficiently supplied to the upper surface of the substrate. Therefore, wasteful consumption of the processing liquid is suppressed compared to the spin coating method.

[0105] As described above, the nozzle moving in the second direction spreads the treatment liquid over the entire upper surface of the substrate. When the nozzle outlet passes the substrate in the second direction, the nozzle moves away from the substrate, thereby breaking up the liquid column of treatment liquid connecting the nozzle and the substrate. At this time, an excess amount of treatment liquid is likely to remain as a liquid puddle on the portion of the substrate where the liquid column was formed and in the vicinity thereof.

[0106] According to the above configuration, during relative movement control, the pressure in the tracking space is made higher than the pressure in the other spaces. In this case, when the liquid column of processing liquid connecting the nozzle and the substrate is broken, the atmosphere in the tracking space flows out with great force toward the other spaces in the tracking space. As a result, excess processing liquid, together with gas flowing out of the tracking space, is blown off the surface of the nozzle and the substrate.

[0107] The pressure in the tracking space is adjusted by gas injected from a slit-shaped gas injection port. Here, the gas injection port is formed in a slit shape extending in the first direction, similar to the discharge port. Therefore, gas is injected into the tracking space over a wide range in the first direction. In this case, the pressure distribution in the tracking space in the first direction is less likely to vary significantly compared to when gas is injected locally into a portion of the tracking space. Therefore, it is possible to prevent an inappropriate amount of processing liquid from being removed due to variations in the pressure distribution in the tracking space. Alternatively, it is possible to prevent an excessive amount of processing liquid from being removed due to variations in the pressure distribution in the tracking space. As a result, it is possible to reduce variations in the thickness of the processing liquid film formed on the substrate.

[0108] (Item 2) In the substrate processing apparatus according to item 1, The pressure adjusting section may set the pressure in the follow-up space higher than the pressure in the preceding space that spreads in the second direction from the discharge port in a plan view.

[0109] In this case, when the liquid column of the processing liquid connecting the nozzle and the substrate is broken, at least a part of the atmosphere in the trailing space flows out with great force toward the leading space, thereby appropriately blowing away the excess processing liquid on the substrate outward from the substrate when the liquid column of the processing liquid connecting the nozzle and the substrate is broken.

[0110] (Item 3) In the substrate processing apparatus according to item 1 or 2, The pressure adjusting unit is a buffer space that receives gas supplied from a gas supply system; a gas flow path formed between the buffer space and the gas injection port, the gas flow path having a constant flow path cross section from the buffer space to the gas injection port; During the relative movement control, the gas in the buffer space may be supplied to the following space through the gas flow path and the gas injection port, thereby making the pressure in the following space higher than the pressure in other spaces.

[0111] The pressure in the tracking space is adjusted by supplying gas from the buffer space. The buffer space buffers pressure fluctuations of the gas flowing through the gas supply system. In this case, large fluctuations in pressure in the tracking space are suppressed compared to when gas is directly supplied to the tracking space from the gas supply system. This suppresses the inadequate removal of the processing liquid due to pressure fluctuations in the tracking space. Alternatively, it suppresses the removal of an excessive amount of processing liquid due to pressure fluctuations in the tracking space. As a result, it is possible to further reduce variations in the thickness of the processing liquid film formed on the substrate.

[0112] (Item 4) The substrate processing apparatus according to item 4 includes: a substrate holder that holds a substrate; a liquid nozzle having a slit-shaped discharge port extending in a first direction parallel to the substrate held by the substrate holding unit, and discharging a processing liquid from the discharge port; a relative movement unit configured to support the substrate holding unit and the liquid nozzle, respectively, and to be capable of moving at least one of the substrate holding unit and the liquid nozzle; a control unit that performs relative movement control to control the relative movement unit so that the liquid nozzle moves in a second direction parallel to the substrate and intersecting the first direction in a space above the substrate while discharging the processing liquid onto the substrate; The pressure adjusting unit has a buffer space that receives gas supplied from a gas supply system, and during the relative movement control, supplies gas in the buffer space to a tracking space that spreads in a third direction opposite to the second direction from the discharge port on a film of processing liquid discharged onto the substrate, thereby making the pressure in the tracking space higher than the pressure in other spaces.

[0113] In the substrate processing apparatus, during relative movement control, the nozzle moves in a second direction in the space above the substrate while discharging the processing liquid from the slit-shaped outlet onto the substrate. This allows the processing liquid to be efficiently supplied to the upper surface of the substrate. Therefore, wasteful consumption of the processing liquid is suppressed compared to the spin coating method.

[0114] As described above, the nozzle moving in the second direction spreads the treatment liquid over the entire upper surface of the substrate. When the nozzle outlet passes the substrate in the second direction, the nozzle moves away from the substrate, thereby breaking up the liquid column of treatment liquid connecting the nozzle and the substrate. At this time, an excess amount of treatment liquid is likely to remain as a liquid puddle on the portion of the substrate where the liquid column was formed and in the vicinity thereof.

[0115] According to the above configuration, during relative movement control, the pressure in the tracking space is made higher than the pressure in the other spaces. In this case, when the liquid column of processing liquid connecting the nozzle and the substrate is broken, the atmosphere in the tracking space flows out with great force toward the other spaces in the tracking space. As a result, excess processing liquid, together with gas flowing out of the tracking space, is blown off the surface of the nozzle and the substrate.

[0116] The pressure in the tracking space is adjusted by supplying gas from the buffer space. The buffer space buffers pressure fluctuations of the gas flowing through the gas supply system. In this case, large fluctuations in pressure in the tracking space are suppressed compared to when gas is directly supplied to the tracking space from the gas supply system. This suppresses the inadequate amount of processing liquid from being removed due to pressure fluctuations in the tracking space. Alternatively, it suppresses the removal of an excessive amount of processing liquid from being removed due to pressure fluctuations in the tracking space. As a result, it is possible to reduce variations in the thickness of the processing liquid film formed on the substrate.

[0117] (Item 5) In the substrate processing apparatus according to item 4, The pressure adjusting section may set the pressure in the follow-up space higher than the pressure in the preceding space that spreads in the second direction from the discharge port in a plan view.

[0118] In this case, when the liquid column of the processing liquid connecting the nozzle and the substrate is broken, at least a part of the atmosphere in the trailing space flows out with great force toward the leading space, thereby appropriately blowing away the excess processing liquid on the substrate outward from the substrate when the liquid column of the processing liquid connecting the nozzle and the substrate is broken.

[0119] (Item 6) In the substrate processing apparatus according to item 4 or 5, The pressure adjusting unit is a slit-shaped gas injection port extending in the first direction; a gas flow path formed between the buffer space and the gas injection port, the gas flow path having a constant flow path cross section from the buffer space to the gas injection port; During the relative movement control, the gas in the buffer space may be supplied to the following space through the gas flow path and the gas injection port, thereby making the pressure in the following space higher than the pressure in other spaces.

[0120] The pressure in the tracking space is adjusted by gas injected from a slit-shaped gas injection port. Here, the gas injection port is formed in a slit shape extending in the first direction, similar to the discharge port. Therefore, gas is injected into the tracking space over a wide range in the first direction. In this case, the pressure distribution in the tracking space in the first direction is less likely to vary significantly compared to when gas is injected locally into a portion of the tracking space. Therefore, it is possible to prevent an inappropriate amount of processing liquid from being removed due to variations in the pressure distribution in the tracking space. Alternatively, it is possible to prevent an excessive amount of processing liquid from being removed due to variations in the pressure distribution in the tracking space. As a result, it is possible to further reduce variations in the thickness of the processing liquid film formed on the substrate. [Explanation of symbols]

[0121] 1...substrate processing apparatus, 10...substrate facing surface, 11a, 22...substrate facing surface, 11b...front inclined surface, 11c...rear inclined surface, 12, 22...upper end surface, 13, 23...front surface, 14, 24...rear surface, 15a...discharge port, 15b...discharge liquid flow path, 15c...storage section, 16a...gas injection port, 16b...gas flow path, 16c...buffer section, 19...gas introduction hole, 25a...gas injection port, 25b...gas flow path, 25c...buffer section, 29...gas introduction hole, 100...coating apparatus, 110...control section, 111...nozzle movement control section, 112...discharge control section, 113...stage control section, 114...pressure control section, 115...condition setting section, 12 0...stage support, 121...guide rail, 130...stage device, 131...plate member, 132...suction chuck, 133...support pin, 134...pin lifting drive unit, 135...suction drive unit, 140...nozzle support, 141...X-direction drive unit, 142...Z-direction drive unit, 150...nozzle block, 160...pressure adjustment block, 170...processing liquid supply system, 171...piping, 172...liquid supply device, 180...gas supply system, 181...piping, 182...gas supply device, 290...operation unit, AS...leading space, FS...following space, VS...virtual surface, W...substrate, We...front end, ta...one end, tb...other end

Claims

1. a substrate holder that holds a substrate; a liquid nozzle having a slit-shaped discharge port extending in a first direction parallel to the substrate held by the substrate holding unit, and discharging a processing liquid from the discharge port; a relative movement unit configured to support the substrate holding unit and the liquid nozzle, respectively, and to be capable of moving at least one of the substrate holding unit and the liquid nozzle; a control unit that performs relative movement control to control the relative movement unit so that the liquid nozzle moves in a second direction parallel to the substrate and intersecting the first direction in a space above the substrate while discharging the processing liquid onto the substrate; a pressure adjusting unit having a slit-shaped gas injection port extending in the first direction, and injecting gas from the gas injection port into a tracking space that spreads from the ejection port in a third direction opposite to the second direction on a film of processing liquid ejected onto the substrate during the relative movement control, thereby making the pressure in the tracking space higher than the pressure in other spaces.

2. The substrate processing apparatus according to claim 1 , wherein the pressure adjusting unit adjusts the pressure in the follow-up space to be higher than the pressure in a preceding space that spreads in the second direction from the discharge port in a plan view.

3. The pressure adjusting unit is a buffer space that receives gas supplied from a gas supply system; a gas flow path formed between the buffer space and the gas injection port, the gas flow path having a constant flow path cross section from the buffer space to the gas injection port; 3. The substrate processing apparatus according to claim 1, wherein, during the relative movement control, the pressure in the following space is made higher than the pressure in other spaces by supplying gas in the buffer space to the following space through the gas flow path and the gas injection port.

4. a substrate holder that holds a substrate; a liquid nozzle having a slit-shaped discharge port extending in a first direction parallel to the substrate held by the substrate holding unit, and discharging a processing liquid from the discharge port; a relative movement unit configured to support the substrate holding unit and the liquid nozzle, respectively, and to be capable of moving at least one of the substrate holding unit and the liquid nozzle; a control unit that performs relative movement control to control the relative movement unit so that the liquid nozzle moves in a second direction parallel to the substrate and intersecting the first direction in a space above the substrate while discharging the processing liquid onto the substrate; a pressure adjusting unit that has a buffer space that receives gas supplied from a gas supply system, and that, during the relative movement control, supplies gas in the buffer space to a tracking space that spreads in a third direction opposite to the second direction from the discharge port on a film of processing liquid discharged onto the substrate, thereby making the pressure in the tracking space higher than the pressure in other spaces.

5. The substrate processing apparatus according to claim 4 , wherein the pressure adjusting unit makes the pressure in the follow-up space higher than the pressure in a preceding space that spreads in the second direction from the discharge port in a plan view.

6. The pressure adjusting unit is a slit-shaped gas injection port extending in the first direction; a gas flow path formed between the buffer space and the gas injection port, the gas flow path having a constant flow path cross section from the buffer space to the gas injection port; 6. The substrate processing apparatus according to claim 4, wherein, during the relative movement control, the pressure in the following space is made higher than the pressure in other spaces by supplying gas in the buffer space to the following space through the gas flow path and the gas injection port.

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