Mask, vapor deposition method and method for manufacturing device

Abstract

To provide a vapor deposition mask capable of enhancing the position accuracy of a mask layer.SOLUTION: A mask may include: a base material including a first surface 301, a second surface 302 positioned on the side opposite to the first surface and a plurality of first openings 31 penetrated from the first surface to the second surface; and a mask layer including a third surface facing the second surface and a fourth surface positioned on the side opposite to the third surface. The base material may include silicon or a silicon compound; the mask layer may include a plurality of second openings 41 overlapping with the first opening in the plane view and penetrated from the third surface to the fourth surface; the base material may include an internal area 36 positioned among the plurality of first openings in the plane view and an external area 35 spreading along the outer edge of the base material and surrounding the plurality of first openings and the internal area in the plane view; and a first surface of the external area may include at least one first projection 37.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] FIELD Embodiments of the present disclosure relate to a mask, a mask apparatus, and a method for manufacturing a mask apparatus. [Background technology]

[0002] Vapor deposition is a known method for forming precise patterns. In vapor deposition, a mask having a plurality of openings formed therein is combined with a substrate. Then, a vapor deposition material is applied to the substrate through the openings in the mask. As a result, a vapor deposition layer containing the vapor deposition material is formed on the substrate in a pattern corresponding to the pattern of the openings in the mask. Vapor deposition is used, for example, as a method for forming pixels of an organic electroluminescence (EL) display device.

[0003] For example, Patent Document 1 discloses a deposition mask including a silicon-containing substrate and a mask layer having a plurality of openings formed therein. The combination of the silicon-containing substrate and the mask layer improves the shape and position accuracy of the through-holes in the mask layer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2023 / 145951 Summary of the Invention [Problem to be solved by the invention]

[0005] When deformation such as bending occurs in the base material, the positions of the plurality of openings in the mask layer are shifted from the ideal positions as a whole. [Means for solving the problem]

[0006] A mask according to one embodiment of the present disclosure may include a substrate including a first surface, a second surface opposite the first surface, and a plurality of first openings extending from the first surface to the second surface; and a mask layer including a third surface opposite the second surface and a fourth surface opposite the third surface. The substrate may include silicon or a silicon compound. The mask layer may include a plurality of second openings overlapping the first openings in a plan view and extending from the third surface to the fourth surface. The substrate may include an inner region located between the plurality of first openings in a plan view, and an outer region extending along an outer edge of the substrate and surrounding the plurality of first openings and the inner region in a plan view. The first surface of the outer region may include at least one first protrusion. [Effects of the Invention]

[0007] According to the embodiments of the present disclosure, the positional accuracy of the mask layer can be improved. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional view illustrating an example of an organic device. [Figure 2] FIG. 1 is a diagram showing an example of a vapor deposition apparatus equipped with a mask device. [Figure 3] FIG. 2 is a plan view showing an example of a mask device when viewed from the incident surface side. [Figure 4] FIG. 2 is a plan view showing an example of a mask device when viewed from the exit surface side. [Figure 5] FIG. 4 is a cross-sectional view of the mask of FIG. 3 taken along line VV. [Figure 6] FIG. 3 is a cross-sectional view showing an example of an outer region of a base material and a first frame. [Figure 7] FIG. 2 is a cross-sectional view showing an example of an outer region of a substrate. [Figure 8] FIG. 2 is a plan view showing an example of a mask when viewed from the incident surface side. [Figure 9] FIG. 2 is a cross-sectional view illustrating an example of an inner region of a substrate and a mask layer. [Figure 10]FIG. 4 is a cross-sectional view showing an example of a second region of the mask layer. [Figure 11] 10A to 10C are cross-sectional views showing an example of a step of forming an intermediate layer. [Figure 12] 5A to 5C are cross-sectional views showing an example of a step of forming a first resist layer. [Figure 13] 10A to 10C are cross-sectional views showing an example of a step of forming a mask layer. [Figure 14] 5A to 5C are cross-sectional views showing an example of a step of forming a protective layer and a second resist layer. [Figure 15] 1A to 1C are cross-sectional views showing an example of a process for processing a substrate. [Figure 16] 10A to 10C are cross-sectional views showing an example of a step of forming a third resist layer. [Figure 17] 1A to 1C are cross-sectional views showing an example of a process for processing a substrate. [Figure 18] 10A to 10C are cross-sectional views showing an example of a step of removing a part of the intermediate layer. [Figure 19] 10A to 10C are cross-sectional views showing an example of a step of removing the third resist layer and the protective layer. [Figure 20] 10A to 10C are cross-sectional views showing an example of a step of measuring the position of the mask in the thickness direction. [Figure 21] 10A to 10C are cross-sectional views showing an example of a step of adjusting the angle of the substrate. [Figure 22] FIG. 10 is a cross-sectional view showing a step of fixing the mask to the first frame. [Figure 23] FIG. 4 is a plan view showing an example of a second frame. [Figure 24] 10A to 10C are cross-sectional views showing an example of a step of adjusting the angle of the substrate. [Figure 25] FIG. 4 is a plan view showing an example of a second frame. [Figure 26] FIG. 2 is a plan view showing an example of a mask when viewed from the incident surface side. [Figure 27] FIG. 2 is a cross-sectional view showing an example of an outer region of a substrate. [Figure 28] FIG. 3 is a cross-sectional view showing an example of an outer region of a base material and a first frame. [Figure 29] FIG. 2 is a cross-sectional view showing an example of an outer region of a substrate. [Figure 30] FIG. 2 is a cross-sectional view showing an example of an outer region of a substrate. [Figure 31] FIG. 3 is a cross-sectional view showing an example of an outer region of a base material and a first frame. [Figure 32] FIG. 2 is a cross-sectional view showing an example of an outer region of a substrate. [Figure 33] FIG. 2 is a cross-sectional view showing an example of an outer region of a substrate. [Figure 34] FIG. 2 is a cross-sectional view showing an example of an outer region of a substrate. [Figure 35] FIG. 1 is a cross-sectional view showing an example of a mask device. DETAILED DESCRIPTION OF THE INVENTION

[0009] In this specification and drawings, unless otherwise specified, terms that refer to the materials that form the basis of a certain configuration, such as "substrate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0010] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not bound by strict meanings, but are interpreted to include a range within which similar functions can be expected.

[0011] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirect contact. Furthermore, unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the up-down direction.

[0012] In this specification, when multiple upper limit candidates and multiple lower limit candidate values ​​are listed for a certain parameter, the numerical range of the parameter may be constructed by combining any one upper limit candidate with any one lower limit candidate. For example, consider a description that reads, "Parameter B is, for example, A1 or more, or may be A2 or more, or may be A3 or more. Parameter B is, for example, A4 or less, or may be A5 or less, or may be A6 or less." In this case, the numerical range of parameter B may be A1 or more and A4 or less, A1 or more and A5 or less, A1 or more and A6 or less, A2 or more and A4 or less, A2 or more and A5 or less, A2 or more and A6 or less, A3 or more and A4 or less, A3 or more and A5 or less, or A3 or more and A6 or less.

[0013] In this specification and drawings, unless otherwise specified, the state in which the face of element A is "opposed to" the face of element B includes not only the case in which the face of element A is in contact with the face of element B, but also the case in which element C is located between the faces of element A and element B. In other words, the term "opposed to" is a term that indicates the orientation of two faces.

[0014] In this specification and drawings, unless otherwise specified, the same or similar symbols are used to designate the same parts or parts having similar functions, and repeated explanations may be omitted. Furthermore, for the sake of convenience, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0015] In this specification and drawings, unless otherwise specified, one embodiment of this specification may be combined with other examples to the extent that no contradiction occurs. In addition, other examples may also be combined with each other to the extent that no contradiction occurs.

[0016] Unless otherwise specified, in the present specification and drawings, when two or more steps or processes are disclosed in a method such as a manufacturing method, other steps or processes that are not disclosed may be performed between the disclosed steps or processes. In addition, the order of the disclosed steps or processes is arbitrary within the range that does not cause a contradiction.

[0017] In one embodiment of the present specification, an example will be described in which a mask is used to form an organic layer or an electrode on a substrate when manufacturing an organic electroluminescence (EL) display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form electrodes of a device for displaying or projecting images or videos to express virtual reality (VR) or augmented reality (AR). The mask of this embodiment may also be used to form electrodes of a display device other than an organic electroluminescence (EL) display device, such as an electrode of a liquid crystal display device. The mask of this embodiment may also be used to form components of devices other than a display device, such as an electrode of a pressure sensor.

[0018] A first aspect of the present disclosure is a mask, comprising: a substrate including a first surface, a second surface opposite the first surface, and a plurality of first openings extending from the first surface to the second surface; a mask layer including a third surface facing the second surface and a fourth surface located on the opposite side of the third surface; the substrate comprises silicon or a silicon compound; the mask layer includes a plurality of second openings that overlap the first openings in a plan view and penetrate from the third surface to the fourth surface; the base material includes an inner region located between the plurality of first openings in a plan view, and an outer region extending along an outer edge of the base material and surrounding the plurality of first openings and the inner region in a plan view, The first surface of the outer region is a mask that includes at least one first protrusion.

[0019] A second aspect of the present disclosure may include the following aspect in the mask according to the first aspect described above: The first surface of the outer region may include a first inner edge and a first outer edge, and the first protrusion may be located between the first inner edge and the first outer edge.

[0020] A third aspect of the present disclosure may include the following aspect in the mask according to the first aspect described above: The first surface of the outer region may include a first inner edge and a first outer edge, and the first protrusion may be located on the first inner edge.

[0021] A fourth aspect of the present disclosure may include the following aspect in the mask according to the second or third aspect described above: An angle formed by an imaginary line tangent to the first outer edge and the first protrusion with respect to the first surface of the outer region may be 0.01° or more and 1.00° or less.

[0022] A fifth aspect of the present disclosure may include the following aspect in the mask according to the first aspect described above: The first surface of the outer region may include a first inner edge and a first outer edge, and the first protrusion may be located on the first outer edge.

[0023] A sixth aspect of the present disclosure may be the mask according to the second or fifth aspect described above, further comprising the following: An angle formed by an imaginary line tangent to the first inner edge and the first protrusion with respect to the first surface of the outer region may be 0.01° or more and 1.00° or less.

[0024] A seventh aspect of the present disclosure may be the mask according to any one of the first to sixth aspects described above, further comprising the following: The first surface of the outer region may include second protrusions, and a distance from the second protrusions to a center point of the substrate may be different from a distance from the first protrusions to the center point.

[0025] An eighth aspect of the present disclosure may include the following aspect in the mask according to the seventh aspect: The first protrusions may have a first height, and the second protrusions may have a second height smaller than the first height.

[0026] A ninth aspect of the present disclosure may be the mask according to the eighth aspect described above, further comprising the following aspect: An angle formed by an imaginary line tangent to the first protrusions and the second protrusions with respect to the first surface of the outer region may be equal to or greater than 0.01° and equal to or less than 1.00°.

[0027] A tenth aspect of the present disclosure may be the mask according to any one of the first to ninth aspects described above, further comprising the following: The first projections may extend continuously so as to surround a center point of the substrate in a plan view.

[0028] An eleventh aspect of the present disclosure may be the mask according to any one of the first to ninth aspects described above, further comprising the following aspect: The at least one first projection may include a plurality of the first projections arranged so as to surround a center point of the substrate in a plan view.

[0029] A twelfth aspect of the present disclosure is a method for manufacturing a mask device, comprising: providing a mask; a connecting step of connecting the mask to a first frame, The mask is a substrate including a first surface, a second surface opposite the first surface, and a plurality of first openings extending from the first surface to the second surface; a mask layer including a third surface facing the second surface and a fourth surface located on the opposite side of the third surface; the substrate comprises silicon or a silicon compound; the mask layer includes a plurality of second openings that overlap the first openings in a plan view and penetrate from the third surface to the fourth surface; the base material includes an inner region located between the plurality of first openings in a plan view, and an outer region extending along an outer edge of the base material and surrounding the plurality of first openings and the inner region in a plan view, the first frame includes a frame first surface and a frame second surface located opposite the frame first surface and facing the first surface of the substrate; The method for manufacturing a mask device includes an angle adjustment process in which the connection process includes pressing a portion of the second surface of the outer region of the base material toward the first frame to change the angle of the first surface of the base material relative to the second surface of the frame.

[0030] A thirteenth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask device according to the twelfth aspect described above: The connecting step may include, after the angle adjusting step, a curing step of curing an adhesive positioned between the first surface of the outer region of the base material and the second frame surface of the first frame.

[0031] A fourteenth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask device according to the twelfth or thirteenth aspect described above: The first surface of the outer region may include at least one first protrusion, and in the angle adjustment step, the portion of the second surface of the outer region that does not overlap the first protrusion in a plan view may be pressed toward the first frame with the first protrusion in contact with the second surface of the frame.

[0032] A fifteenth aspect of the present disclosure may include the following aspect in the method for manufacturing a mask device according to any one of the twelfth to fourteenth aspects described above: In the angle adjustment step, a second frame in contact with the second surface of the base may be pressed toward the first frame.

[0033] A sixteenth aspect of the present disclosure may be the method for manufacturing a mask device according to any one of the twelfth to fourteenth aspects described above, further comprising the following aspect: In the angle adjustment step, the portion of the second surface of the outer region of the base may be pressed toward the first frame by a pin inserted into a through-hole formed in a second frame that contacts the second surface of the base.

[0034] A seventeenth aspect of the present disclosure may be the method for manufacturing a mask device according to any one of the twelfth to sixteenth aspects described above, further comprising the following aspect: The connecting step may include a measuring step of measuring positions of a first reference point and a second reference point of the mask layer in a thickness direction of the mask, and the angle adjusting step may include pressing the portion of the second surface of the outer region of the base material toward the first frame so as to reduce a distance in the thickness direction between the first reference point and the second reference point.

[0035] An eighteenth aspect of the present disclosure is a mask device, comprising: With a mask, a first frame connected to the mask; The mask is a substrate including a first surface, a second surface opposite the first surface, and a plurality of first openings extending from the first surface to the second surface; a mask layer including a third surface facing the second surface and a fourth surface located on the opposite side of the third surface; the substrate comprises silicon or a silicon compound; the mask layer includes a plurality of second openings that overlap the first openings in a plan view and penetrate from the third surface to the fourth surface; the base material includes an inner region located between the plurality of first openings in a plan view, and an outer region extending along an outer edge of the base material and surrounding the plurality of first openings and the inner region in a plan view, the first frame includes a frame first surface and a frame second surface located opposite the frame first surface and facing the first surface of the substrate; The mask device includes a first surface of the outer region that includes a portion that is inclined relative to the second surface of the frame.

[0036] A nineteenth aspect of the present disclosure may be the mask device according to the eighteenth aspect described above, further comprising the following aspect: The first surface of the outer region may include at least one first protrusion in contact with the second surface of the frame.

[0037] An embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0038] An organic device 100 including an organic layer formed by using a mask will be described. The organic device 100 includes an organic layer or an electrode formed by using a mask. Figure 1 is a cross-sectional view showing an example of the organic device 100.

[0039] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along an in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located on the opposite side of the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0040] The element 115 may include a first electrode 120 , an organic layer 130 disposed on the first electrode 120 , and a second electrode 140 disposed on the organic layer 130 .

[0041] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a planar view. The insulating layer 160 may contain, for example, polyimide. The insulating layer 160 may overlap an edge of the first electrode 120. "Planar view" means viewing an object along the normal direction to the surface of a plate-like member such as the substrate 110.

[0042] The substrate 110 may be made of an insulating material. Materials that can be used for the substrate 110 include, for example, inflexible materials such as silicon, quartz glass, Pyrex (registered trademark) glass, and synthetic quartz plates, as well as flexible materials such as resin films, optical resin plates, and thin glass. The substrate 110 may have a planar shape similar to that of silicon wafers used in semiconductor manufacturing. In this case, the substrate 110 can be processed using equipment for carrying out semiconductor manufacturing processes. For example, the first electrode 120, the insulating layer 160, and the like can be formed on the substrate 110 using equipment for carrying out semiconductor manufacturing processes.

[0043] The element 115 is configured to realize some function by applying a voltage between the first electrode 120 and the second electrode 140, or by causing a current to flow between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that forms an image.

[0044] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or another conductive inorganic material. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide.

[0045] The organic layer 130 includes an organic material. When a current is applied to the organic layer 130, the organic layer 130 can perform some function. Applying a current means that a voltage is applied to the organic layer 130 or that a current flows through the organic layer 130. The organic layer 130 may be, for example, a light-emitting layer that emits light when a current is applied, or a layer whose light transmittance or refractive index changes when a current is applied. The organic layer 130 may include an organic semiconductor material.

[0046] 1, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may include a third organic layer included in a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0047] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located therebetween is driven. If the organic layer 130 is an emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0048] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0049] The second electrode 140 may include a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, and alloys thereof. As shown in FIG. 1, the second electrode 140 may extend so as to overlap two adjacent organic layers 130 in a plan view.

[0050] Next, a method for forming the organic layer 130 on the substrate 110 by vapor deposition will be described. Fig. 2 is a diagram showing a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process for depositing a vapor deposition material on a target object.

[0051] As shown in FIG. 2, the vapor deposition apparatus 10 may include therein a vapor deposition source 6, a heater 8, and a mask 20. The vapor deposition apparatus 10 may further include an exhaust means for creating a vacuum atmosphere inside the vapor deposition apparatus 10. The vapor deposition source 6 is, for example, a crucible. The vapor deposition source 6 contains a vapor deposition material 7 such as an organic material or a metal material. The heater 8 heats the vapor deposition source 6 to evaporate the vapor deposition material 7 under a vacuum atmosphere.

[0052] The mask 20 includes an incident surface 201, an exit surface 202, a plurality of first openings 31, and a plurality of second openings 41. The incident surface 201 faces the deposition source 6. The exit surface 202 is located on the opposite side of the incident surface 201. The exit surface 202 faces the first surface 111 of the substrate 110. The first opening 31 is located on the incident surface 201. The second opening 41 is located on the exit surface 202. The first opening 31 and the second opening 41 are connected in the thickness direction of the mask 20. The plurality of second openings 41 overlap one first opening 31 in a plan view. A portion of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the first openings 31 and the second openings 41 and exits from the exit surface 202. The deposition material 7 that exits from the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110. With respect to the mask 20, "planar view" means viewing the mask 20 along the normal direction of the second surface 302 of the substrate 30. With respect to the mask device described below, "planar view" means viewing the mask device along the normal direction of the second surface of the first frame.

[0053] As shown in FIG. 2 , the deposition apparatus 10 may include a magnet 5 disposed on the second surface 112 side of the substrate 110. When the mask 20 includes a magnetic material, the magnet 5 can attract the mask 20 toward the substrate 110 by magnetic force. This can reduce or eliminate the gap between the mask 20 and the substrate 110. This can suppress the occurrence of a shadow during the deposition process. In this application, the shadow refers to a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 41 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 41. The shadow occurs when the deposition material 7 adheres to the wall surface of the mask 20 or when the deposition material 7 enters the gap between the mask 20 and the substrate 110.

[0054] The mask 20 may be supported by a first frame 60. The first frame 60 may be located at the incident surface 201 of the mask 20. The first frame 60 includes a frame first surface 601 and a frame second surface 602. A portion of the frame second surface 602 faces the incident surface 201 of the mask 20. The frame first surface 601 is located on the opposite side of the frame second surface 602.

[0055] The first frame 60 has one third opening 61 formed therein, penetrating from the frame first surface 601 to the frame second surface 602. The one third opening 61 overlaps with the multiple first openings 31 in a plan view. An apparatus including the mask 20 and the first frame 60 is also referred to as a mask apparatus 15.

[0056] The first frame 60 includes an outer surface 603 and an inner surface 604. The inner surface 604 is the surface of the first frame 60 that faces the third opening 61. The outer surface 603 defines the outer edge of the first frame 60 in a plan view.

[0057] Next, the mask 20 and the mask device 15 will be described in detail. Fig. 3 is a plan view showing an example of the mask device 15 when viewed from the side of the incident surface 201. Fig. 4 is a plan view showing an example of the mask device 15 when viewed from the side of the exit surface 202. Fig. 5 is a cross-sectional view taken along line VV of the mask device 15 in Fig. 3.

[0058] As shown in FIG. 5, the mask 20 includes a substrate 30 , a mask layer 40 , and an intermediate layer 50 .

[0059] The substrate 30 includes a first surface 301, a second surface 302, a plurality of first openings 31, and a plurality of first wall surfaces 32. The first surface 301 may constitute the incident surface 201. The second surface 302 is located on the opposite side of the first surface 301. The first wall surface 32 is located between the first surface 301 and the second surface 302.

[0060] The first opening 31 penetrates the substrate 30 from the first surface 301 to the second surface 302. As shown in FIG. 3 , the substrate 30 may include a plurality of first openings 31. The plurality of first openings 31 may be aligned in a first direction D1 and a second direction D2. The second direction D2 may be perpendicular to the first direction D1. The first direction D1 and the second direction D2 are directions parallel to the second surface 302 of the substrate 30 of the mask 20 when the mask 20 is not joined to the first frame 60.

[0061] One first opening 31 may correspond to one device. For example, one first opening 31 may correspond to one screen of an organic EL display device. A mask 20 including multiple first openings 31 can simultaneously form organic layer patterns corresponding to multiple screens on the substrate 110. As shown in FIG. 3 , the first opening 31 may have a rectangular outline in a plan view.

[0062] The first wall surface 32 faces the first opening 31. In the example shown in FIG.

[0063] 3 and 5, the region of the substrate 30 other than the first openings 31 may be divided into an outer region 35 and an inner region 36. The inner region 36 is a region of the substrate 30 located between two adjacent first openings 31 in a plan view. The outer region 35 is a region of the substrate 30 located between an outer edge 303 of the substrate 30 and the first openings 31 in a plan view. As shown in FIG. 3, the inner region 36 may extend in a first direction D1 and a second direction D2.

[0064] 3 and 4, the base material 30 may include an alignment mark 39. The alignment mark 39 is formed, for example, on the second surface 302. The alignment mark 39 may also be formed on the first surface 301. The alignment mark 39 is used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 has the property of transmitting visible light, the alignment mark 39 can be seen through the substrate 110.

[0065] 3 and 4, the alignment mark 39 may have a circular outline in a plan view. Although not shown, the alignment mark 39 may have an outline other than a circle, such as a rectangle or a cross. The alignment mark 39 may be located in the outer region 35 or the inner region 36.

[0066] The shape of the alignment mark 39 in the cross-sectional view is arbitrary. For example, the alignment mark 39 may include a recess located on the first surface 301 or the second surface 302. The alignment mark 39 may include a hole penetrating from the first surface 301 to the second surface 302. The recess and hole may be formed by etching the first surface 301 or the second surface 302. The recess and hole may be formed by irradiating the first surface 301 or the second surface 302 with a laser. For example, the alignment mark 39 may include a layer located on the first surface 301 or the second surface 302. The layer is formed of a material different from that of the substrate 30. The alignment mark 39 may be formed in a layer other than the substrate 30.

[0067] The substrate 30 includes silicon or a silicon compound. The substrate 30 is produced, for example, by processing a silicon wafer. As shown in FIG. 3, the outer edge 303 of the substrate 30 may include a linear portion. The linear portion is also referred to as an orientation flat. Although not shown, the outer edge 303 may have a notch formed therein. The notch is also referred to as a notch. The orientation flat and the notch represent the crystal orientation of the silicon wafer. The substrate 30 may have a property of transmitting light used in the heating process described below. The silicon compound is, for example, glass such as quartz glass.

[0068] The maximum dimension S1 of the substrate 30 in a plan view is, for example, 100 mm or more, or may be 150 mm or more, or may be 200 mm or more. The dimension S1 is, for example, 500 mm or less, or may be 400 mm or less, or may be 300 mm or less.

[0069] The dimension S2 of the first openings 31 in the direction in which the first openings 31 are arranged is, for example, 5 mm or more, or may be 10 mm or more, or may be 20 mm or more. The dimension S2 is, for example, 100 mm or less, or may be 50 mm or less, or may be 30 mm or less.

[0070] The distance S3 between two first openings 31 in the direction in which the first openings 31 are arranged is, for example, 0.1 mm or more, or may be 0.5 mm or more, or 1.0 mm or more. The distance S3 is, for example, 20 mm or less, or may be 15 mm or less, or may be 10 mm or less.

[0071] The thickness of the substrate 30 is defined as the maximum thickness T1 of the outer region 35. Thickness T1 is, for example, 50 μm or more, or may be 100 μm or more, or may be 200 μm or more. Thickness T1 is, for example, 1000 μm or less, or may be 800 μm or less, or may be 600 μm or less.

[0072] Next, the mask layer 40 will be described. As shown in Fig. 5, the mask layer 40 includes a third surface 401, a fourth surface 402, and a plurality of second openings 41. The third surface 401 faces the second surface 302 or the first openings 31 of the substrate 30. The fourth surface 402 is located on the opposite side of the third surface 401 in the thickness direction of the substrate 30. The fourth surface 402 may constitute the exit surface 202 of the mask 20.

[0073] The second openings 41 penetrate from the third surface 401 to the fourth surface 402. One second opening 41 corresponds to one vapor deposition layer. The vapor deposition layer is, for example, the organic layer 130. A group of the regularly arranged second openings 41 corresponds to one screen of the organic EL display device. As shown in FIGS. 3 and 4 , a group of the regularly arranged second openings 41 may overlap one first opening 31 in plan view.

[0074] 4 and 5, the mask layer 40 may include, in a plan view, a plurality of first regions 43 and a plurality of second regions 44. In other words, the mask layer 40 may be partitioned, in a plan view, into a plurality of first regions 43 and a plurality of second regions 44. The first regions 43 are regions of the mask layer 40 that overlap the first openings 31 in a plan view.

[0075] The second region 44 is a region located between the multiple first regions 43 or outside the multiple first regions 43 in a planar view. The "outside" is the side away from the center point of the mask 20 in a planar view. The "inside" is the side closer to the center point of the mask 20 in a planar view.

[0076] The intermediate layer 50 will be described. The intermediate layer 50 is a layer located between the second surface 302 of the substrate 30 and the third surface 401 of the mask layer 40 in the thickness direction of the mask 20. The intermediate layer 50 is arranged at least in a position overlapping the inner region 36 of the substrate 30 in a plan view. The intermediate layer 50 may be arranged in a position overlapping the inner region 36 and the outer region 35 of the substrate 30 in a plan view. Although not shown, a portion of the intermediate layer 50 may be arranged in a position overlapping the first opening 31 of the substrate 30.

[0077] The first frame 60 will now be described. The first frame 60 is a member connected to the mask 20 so that it can be grasped when handling the mask 20, for example, when moving the mask 20. Connecting the first frame 60 to the mask 20 makes it easier to handle the mask 20.

[0078] 5 , the first frame 60 is connected to the outer region 35 of the base material 30. For example, the second frame surface 602 of the first frame 60 may be connected to the first surface 301 of the outer region 35 of the base material 30. An adhesive layer 70 may be disposed between the first surface 301 of the outer region 35 and the second frame surface 602 of the first frame 60. In other words, the first frame 60 may be connected to the base material 30 via the adhesive layer 70.

[0079] In a plan view, the first frame 60 does not overlap the first opening 31 of the base material 30. Furthermore, in a plan view, at least a portion of the first frame 60 extends to the outside of the outer edge 303 of the base material 30. This allows the first frame 60 to expand the area for gripping the mask 20 when handling it. The first frame 60 may include an area that extends circumferentially outside the outer edge 303 of the base material 30 in a plan view. The first frame 60 may include an outer surface 603 that surrounds the outer edge 303 of the base material 30 in a plan view.

[0080] FIG. 6 is a cross-sectional view showing an example of the outer region 35 of the base material 30 and the first frame 60. As shown in FIG.

[0081] The first frame 60 may include a glass material or a metal material. Examples of the glass material include quartz glass, borosilicate glass, alkali-free glass, and soda glass. Examples of the metal material include Invar and stainless steel such as SUS430 and SUS304. When the first frame 60 includes these materials, the rigidity of the first frame 60 can be made higher than the rigidity of the substrate 30. The material of the first frame 60 may be determined so that the first frame 60 has the necessary rigidity, taking into consideration the gripping strength of an operator or robot hand handling the mask device 15.

[0082] The linear thermal expansion coefficient of the first frame 60 is preferably approximately the same as the linear thermal expansion coefficient of the base material 30. This makes it possible to prevent a difference in the elongation rates of the first frame 60 and the base material 30 from occurring when the mask device 15 is heated. The absolute value of the difference between the linear thermal expansion coefficient of the first frame 60 and the linear thermal expansion coefficient of the base material 30 is, for example, 15 ppm / °C or less, or may be 10 ppm / °C or less, or may be 5.0 ppm / °C or less.

[0083] The thickness T5 of the first frame 60 is, for example, 500 μm or more, and may be 1 mm or more, or 5 mm or more. The thickness T5 is, for example, 30 mm or less, and may be 20 mm or less, or 10 mm or less.

[0084] The adhesive layer 70 fixes the first frame 60 to the base material 30. The adhesive layer 70 may include a surface in contact with the first surface 301 and a surface in contact with the frame second surface 602. Although not shown, the mask device 15 may include a layer located between the frame second surface 602 of the first frame 60 and the adhesive layer 70. Although not shown, the mask device 15 may include a layer located between the first surface 301 of the base material 30 and the adhesive layer 70.

[0085] The adhesive layer 70 may include a glass material, an inorganic material, a metal material, or a resin material. The adhesive layer 70 may be formed of glass frit, glass paste, solder paste, conductive paste, epoxy resin, polyimide, acrylic resin, or the like. To prevent outgassing from the adhesive layer 70 during the vapor deposition process in the vapor deposition apparatus 10, the adhesive layer 70 may be formed of, for example, a high-heat-resistant epoxy adhesive, "AREMCOBOND 526N," manufactured by Aremco Products, or a UV-curable adhesive, "WORLDROCK® 5910 (product number)" or "WORLDROCK® 8723K9B (product number)," manufactured by Kyoritsu Chemical Industries, Ltd. Using a highly solvent-resistant material for the adhesive layer 70 can prevent deformation of the adhesive layer 70 upon contact with a cleaning solution, which can cause the first frame 60 to unintentionally separate from the mask 20 when the mask device 15 used in the vapor deposition process is cleaned to remove the vapor deposition material. For example, the ultraviolet curing adhesive "ThreeBond (registered trademark) 3026E (product name)" manufactured by ThreeBond Co., Ltd. can be used as the material for forming the adhesive layer 70.

[0086] The thickness of the adhesive layer 70 is, for example, 0.05 μm or more, or may be 1 μm or more, or 5 μm or more, or 10 μm or more. The thickness of the adhesive layer 70 is, for example, 100 μm or less, or may be 50 μm or less, or 20 μm or less.

[0087] The substrate 30 will now be described. As shown in FIG. 6 , the first surface 301 of the outer region 35 of the substrate 30 may include a portion inclined with respect to the frame second surface 602. The portion of the first surface 301 inclined with respect to the frame second surface 602 is also referred to as an inclined surface. The inclined surface may be inclined at a constant angle with respect to the frame second surface 602. The inclined surface of the first surface 301 of the outer region 35 may have the largest occupancy rate on the first surface 301 of the outer region 35. In other words, the portion that is inclined at a constant angle with respect to the frame second surface 602 and has the largest occupancy rate on the first surface 301 of the outer region 35 may be identified as the inclined surface.

[0088] The occupancy rate of the inclined surfaces on the first surface 301 of the outer region 35 is, for example, 30% or more, or alternatively, 40% or more, or 50% or more. The occupancy rate of the inclined surfaces on the first surface 301 of the outer region 35 is, for example, 90% or less, or alternatively, 80% or less, or alternatively, 70% or less.

[0089] In Fig. 6, the symbol θ1 represents the inclination angle of the inclined surface of the first surface 301 of the outer region 35 relative to the frame second surface 602. In the example shown in Fig. 6, the outer region 35 is inclined relative to the frame second surface 602 so that the distance between the first surface 301 of the outer region 35 and the frame second surface 602 of the first frame 60 increases toward the inside. In this case, the inclination angle θ1 is also referred to as the backward tilt angle θ1. In Fig. 6, the line marked with the symbol HL is an imaginary straight line parallel to the frame second surface 602.

[0090] The rearward tilt angle θ1 of the outer region 35 is, for example, 0.01° or more, or may be 0.05° or more, 0.10° or more, or 0.20° or more. The rearward tilt angle θ1 of the outer region 35 is, for example, 1.00° or less, or may be 0.80° or less, 0.60° or less, or 0.40° or less.

[0091] In FIG. 6, the symbol ΔZ1 represents the distance in the thickness direction D3 between the portion of the outer region 35 and the portion of the inner region 36 that face each other in the first direction D1 in one first opening 31. The thickness direction D3 is a normal direction to the second surface 302 of the base material 30. The position of the outer region 35 in the thickness direction D3 is determined by the position of the second surface 302 that contacts the first wall surface 32. The position of the inner region 36 in the thickness direction D3 is determined by the position of the second surface 302 that contacts the first wall surface 32. When the outer region 35 has a rearward tilt angle θ1 as shown in FIG. 6, the inner region 36 can be positioned higher than the outer region 35. The distance ΔZ1 is also referred to as the push-up distance ΔZ1.

[0092] The push-up distance ΔZ1 of the substrate 30 is, for example, 0.1 μm or more, or may be 0.5 μm or more, 2.0 μm or more, or 10.0 μm or more. The push-up distance ΔZ1 of the substrate 30 is, for example, 50.0 μm or less, or may be 40.0 μm or less, 30.0 μm or less, or may be 20.0 μm or less.

[0093] In a conventional mask device, when bending due to its own weight occurs in the base material 30, the inner region 36 is generally located lower than the outer region 35. As a result, the positions of the second openings 41 of the mask layer 40 in the thickness direction D3 vary depending on the positions of the second openings 41 in a planar view. It is considered that the greater the amount of variation in the positions of the second openings 41 in the thickness direction D3, the more difficult it becomes to adjust the positions of the second openings 41 of the mask layer 40 relative to the substrate 110.

[0094] In this embodiment, because the outer region 35 has a backward tilt angle θ1, a portion of the inner region 36 is pushed up relative to the outer region 35 in the thickness direction D3. The backward tilt angle θ1 cancels out a portion of the fluctuation in the position of the mask layer 40 in the thickness direction D3, which is caused by bending of the outer region 35 due to its own weight. This reduces the amount of fluctuation in the positions of the plurality of second openings 41 in the thickness direction D3. The reduced amount of fluctuation makes it easier to adjust the positions of the plurality of second openings 41 in the mask layer 40 relative to the substrate 110.

[0095] The amount of variation in the positions of the second openings 41 in the thickness direction D3 may be evaluated based on the distance between the first reference point and the second reference point P2 of the mask 20 in the thickness direction D3.

[0096] 5, the second reference point P2 is the center point of the mask 20 in a plan view. The position of the second reference point P2 in the thickness direction D3 is measured on the exit surface 202.

[0097] The first reference point is located on a line passing through the center point of the mask 20 in a planar view and is a point on the outer edge of the second opening 41 that is closest to the outer edge of the mask 20. The mask 20 may include multiple first reference points. For example, as shown in FIG. 5, the first reference points of the mask 20 may include an eleventh reference point P11 and a twelfth reference point P12. The eleventh reference point P11 and the twelfth reference point P12 are each located on a line passing through the center point of the mask 20 in a planar view and extending in the first direction D1 and are points on the outer edge of the second opening 41 that are closest to the outer edge of the mask 20. As shown in FIG. 5, the positions of the eleventh reference point P11 and the twelfth reference point P12 in the thickness direction D3 are measured at the exit surface 202. Although not shown, the mask 20 may include three or more first reference points.

[0098] 7 is a cross-sectional view showing an example of the outer region 35 of the substrate 30. The first surface 301 of the outer region 35 may include at least one first protrusion 37. The first protrusion 37 is a part of the first surface 301 that protrudes toward the frame second surface 602 of the first frame 60. The first protrusion 37 has a first height H1. A user of the mask 20 can tilt the first surface 301 relative to the frame second surface 602 by using the first protrusion 37.

[0099] The first height H1 of the primary protrusions 37 is, for example, 1.0 μm or more, and may be 2.0 μm or more, 3.0 μm or more, or 5.0 μm or more. The first height H1 of the primary protrusions 37 is, for example, 500 μm or less, and may be 100 μm or less, 50 μm or less, or 10 μm or less.

[0100] The first surface 301 of the outer region 35 includes a first outer edge 3011 and a first inner edge 3012. The first outer edge 3011 is an edge located on the outer side of the edges of the first surface 301 of the outer region 35 in a plan view. The first outer edge 3011 is in contact with the outer edge 303. The first inner edge 3012 is an edge located on the inner side of the edges of the first surface 301 of the outer region 35 in a plan view. The first inner edge 3012 is in contact with the first wall surface 32. As shown in FIG. 7 , the first protrusion 37 may be located between the first outer edge 3011 and the first inner edge 3012.

[0101] The first protrusion 37 may include a flat surface 371. The flat surface 371 may extend parallel to a portion of the first surface 301 that constitutes the inclined surface when the mask 20 is connected to the first frame 60. When the first protrusion 37 includes the flat surface 371, the first height H1 is the distance between the flat surface 371 and the portion of the first surface 301 that constitutes the inclined surface when the mask 20 is connected to the first frame 60.

[0102] In FIG. 7, the symbol θ10 represents the angle that the line SL1 forms with respect to the first surface 301 of the outer region 35. The line SL1 is an imaginary line that is tangent to the first outer edge 3011 and the first protrusion 37. The rearward tilt angle θ1 described above is maximum when both the first outer edge 3011 and the first protrusion 37 are tangent to the second frame surface 602 of the first frame 60. The angle θ10 is also referred to as the maximum rearward tilt angle θ10.

[0103] The maximum rearward tilt angle θ10 is, for example, 0.01° or more, and may be 0.05° or more, 0.10° or more, or 0.20° or more. The maximum rearward tilt angle θ10 is, for example, 1.00° or less, 0.90° or less, 0.80° or less, or 0.70° or less.

[0104] 7, symbol K1 is the distance in the first direction D1 from the first outer edge 3011 to the first protrusion 37. The greater the ratio of the first height H1 to the distance K1, the greater the maximum rearward tilt angle θ10.

[0105] In FIG. 7, the symbol θ20 represents the angle that the line SL2 forms with respect to the first surface 301 of the outer region 35. The line SL2 is a virtual line that is tangent to the first inner edge 3012 and the first protrusion 37. As will be described later, the first surface 301 of the outer region 35 may be inclined with respect to the frame second surface 602 of the first frame 60 so that the distance between the first surface 301 of the outer region 35 and the frame second surface 602 of the first frame 60 narrows as the surface 301 moves inward. In this case, the inclination angle of the first surface 301 of the outer region 35 is also referred to as the forward tilt angle. The angle θ20 is also referred to as the maximum forward tilt angle θ20.

[0106] The maximum forward tilt angle θ20 is, for example, 0.01° or more, and may be 0.05° or more, 0.10° or more, or 0.20° or more. The maximum forward tilt angle θ20 is, for example, 1.00° or less, 0.90° or less, 0.80° or less, or 0.70° or less.

[0107] 7, the symbol K2 is the distance in the first direction D1 from the first inner edge 3012 to the first protrusion 37. The greater the ratio of the first height H1 to the distance K2, the greater the maximum forward tilt angle θ20.

[0108] 8 is a plan view showing an example of the mask 20 when viewed from the incident surface side. The primary protrusions 37 may extend continuously so as to surround the center point of the substrate 30 in plan view. The primary protrusions 37 may extend parallel to the outer edge 303 in plan view.

[0109] 8, the inner region 36 of the base material 30 may include, in plan view, a plurality of first bar regions 361 and a plurality of second bar regions 362. The first bar region 361 is a portion of the inner region 36 that extends in the first direction D1. The second bar region 362 is a portion of the inner region 36 that extends in the second direction D2. Each of the plurality of first openings 31 is surrounded by two first bar regions 361 and two second bar regions 362 in plan view.

[0110] FIG. 9 is a cross-sectional view showing an example of the inner region 36 of the substrate 30 and the mask layer 40. The intermediate layer 50 includes a layer that performs some function for the substrate 30 or the mask layer 40. For example, the intermediate layer 50 may include a stopper layer that stops etching during the process of processing the substrate 30 by etching. The stopper layer is resistant to the etchant that etches the substrate 30. The stopper layer may include nickel, copper, titanium, aluminum, iron, or an alloy thereof. For example, the stopper layer may include an iron alloy containing nickel. An example of an iron alloy containing nickel is permalloy. Permalloy is an iron alloy containing 35% to 80% by weight of nickel. The stopper layer may include an inorganic compound such as silicon oxide. The stopper layer can prevent the mask layer 40 from being etched during the process of processing the substrate 30.

[0111] The intermediate layer 50 may include an adhesion layer that improves adhesion between the substrate 30 and the mask layer 40. The adhesion layer may include titanium or a titanium alloy. The intermediate layer 50 may include a stopper layer and an adhesion layer.

[0112] The thickness T3 of the intermediate layer 50 is, for example, 0.01 μm or more, optionally 0.03 μm or more, or 0.05 μm or more. The thickness T3 of the intermediate layer 50 is, for example, 10 μm or less, optionally 1.0 μm or less, or optionally 0.10 μm or less.

[0113] The intermediate layer 50 may be positioned so as not to overlap the second opening 41 of the mask layer 40 in a plan view. This makes it possible to suppress the occurrence of a shadow caused by the intermediate layer 50. The intermediate layer 50 may be positioned so as not to overlap the first opening 31 of the substrate 30 in a plan view. Although not shown, the intermediate layer 50 may include a portion that overlaps the first opening 31 of the substrate 30 in a plan view.

[0114] The mask layer 40 includes a second wall surface 42 facing the second opening 41. Symbol S6 represents the distance between the second wall surface 42 of the mask layer 40 and the first wall surface 32 of the substrate 30 in the surface direction of the substrate 30. The distance S6 is, for example, 1.0 μm or more, or may be 2.0 μm or more, or may be 3.0 μm or more. The distance S6 is, for example, 10.0 μm or less, or may be 7.0 μm or less, or may be 5.0 μm or less.

[0115] 10 is a cross-sectional view showing an example of the first region 43 of the mask layer 40. The second region 44 may include a metal layer. The first region 43 may be composed of only a metal layer. The layer structure of the first region 43 may be the same as the layer structure of the second region 44.

[0116] The symbol R1 represents the dimension of the second opening 41 at the third surface 401. The symbol R2 represents the dimension of the second opening 41 at the fourth surface 402. The dimension R1 is also referred to as the first dimension. The dimension R2 is also referred to as the second dimension. The dimension of the deposition layer formed on the substrate 110 by the deposition process using the mask 20 is determined by the second dimension R2.

[0117] The first dimension R1 may be greater than the second dimension R2. In other words, the second dimension R2 may be smaller than the first dimension R1. This makes it possible to prevent a shadow from occurring near the second wall surface 42. The first dimension R1 and the second dimension R2 are determined in the direction in which the second openings 41 are aligned.

[0118] 10, the second wall surface 42 may include a tapered surface 42a that widens away from the center of the second opening 41 as it moves from the fourth surface 402 toward the third surface 401. When the second wall surface 42 includes the tapered surface 42a, the dimension R1 can be made larger than the dimension R2.

[0119] 10, symbol S8 represents the width of tapered surface 42a in the direction in which second openings 41 are arranged. Width S8 is, for example, 0.2 μm or more, or may be 0.5 μm or more, or 1.0 μm or more. Width S8 is, for example, 25 μm or less, or may be 20 μm or less, or may be 10 μm or less.

[0120] 10, the symbol φ1 represents the angle formed between the second wall surface 42 and the fourth surface 402. The angle φ1 is, for example, 50° or more, may be 55° or more, or may be 60° or more. The angle φ1 is, for example, less than 90°, and may be 85° or less, or may be 80° or less.

[0121] The thickness T2 of the mask layer 40 is smaller than the thickness T1 of the substrate 30. The thickness T2 is, for example, 25.0 μm or less, and may be 10.0 μm or less, or 5.0 μm or less. This makes it possible to suppress the occurrence of shadows. The thickness T2 is, for example, 0.5 μm or more, and may be 1.0 μm or more, or 2.0 μm or more. This makes it possible to suppress the occurrence of defects such as pinholes, deformations, etc. in the effective region 431.

[0122] The distance S5 between the two second wall surfaces 42 in the direction in which the second openings 41 are arranged is, for example, 1.0 μm or more, or may be 2.0 μm or more, or 3.0 μm or more. The distance S5 is, for example, 25.0 μm or less, or may be 10.0 μm or less, or may be 5.0 μm or less.

[0123] The metal layer of the mask layer 40 may include a magnetic material such as nickel, iron, cobalt, or alloys thereof, or a non-magnetic material such as copper, aluminum, titanium, chromium, or alloys thereof.

[0124] The mask layer 40 may include a seed layer. The seed layer is a layer that carries charge to a plating solution when a metal layer is formed by electrolytic plating. The seed layer may include a metal. Examples of the metal include nickel, copper, titanium, aluminum, and alloys thereof. The seed layer may be composed of a single layer or multiple layers.

[0125] The thickness of the seed layer is, for example, 2.0 nm or more, optionally 10.0 nm or more, or 30.0 nm or more. The thickness of the seed layer is, for example, 5.0 μm or less, optionally 1.0 μm or less, or 150 nm or less.

[0126] The thickness of each layer, the dimensions of each component, the spacing, etc. are measured by observing an image of a cross section of the mask 20 using a scanning electron microscope.

[0127] Next, a method for manufacturing the mask 20 will be described. First, a substrate 30 is prepared. A silicon wafer may be used as the substrate 30. The first surface 301 and the second surface 302 of the substrate 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first surface 301 and the second surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientation of the first surface 301 and the second surface 302 may be (100), (110), or the like.

[0128] 11, the intermediate layer 50 is formed on the second surface 302 of the substrate 30. The intermediate layer 50 may be formed on the entire second surface 302. The intermediate layer 50 may be formed by a physical film formation method such as a sputtering method, a vapor deposition method, or an ion plating method.

[0129] Next, a step of forming a first resist layer 55 on the intermediate layer 50 is performed. For example, a dry film resist may be attached to the intermediate layer 50. For example, a solution containing a resist material may be applied to the intermediate layer 50. The first resist layer 55 may include a positive resist material or a negative resist material. When the first resist layer 55 includes an inorganic compound such as silicon oxide, the first resist layer 55 may be formed by a vapor deposition method such as CVD. Next, a step of processing the first resist layer 55 is performed. FIG. 12 is a cross-sectional view showing the processed first resist layer 55. The first resist layer 55 includes a plurality of island portions 573. The above-mentioned second openings 41 of the mask 20 are formed at the positions of the island portions 573.

[0130] The method for processing the first resist layer 55 is not particularly limited. For example, if the first resist layer 55 is photosensitive, the first resist layer 55 may be processed by exposing and developing the first resist layer 55. For example, if the first resist layer 55 contains a silicon compound, the first resist layer 55 may be processed by dry etching using an etching gas. The dry etching may be reactive ion etching.

[0131] Subsequently, a step of forming a mask layer 40 is performed. The mask layer 40 is formed in the gaps 574 between the plurality of island portions 573 of the first resist layer 55. The mask layer 40 is also formed outside the plurality of island portions 573. The mask layer 40 may be formed by a plating step. In the plating step, a plating solution containing ions of the metal that constitutes the mask layer 40 is supplied to the gaps 574 of the first resist layer 55. The plating step may be an electrolytic plating step or an electroless plating step. When the electrolytic plating step is performed, a seed layer may be formed on the intermediate layer 50. Alternatively, the intermediate layer 50 may function as a seed layer.

[0132] Subsequently, a step is performed to remove the first resist layer 55. Fig. 13 is a cross-sectional view showing an example of the mask layer 40 after the first resist layer 55 has been removed.

[0133] Subsequently, a substrate processing step is performed to process the substrate 30. The substrate processing step may include a projection forming step to form the first projections 37 and an opening forming step to form the first openings 31 in the substrate 30.

[0134] In the protrusion forming step, a second resist layer 71 may be formed on a portion of the first surface 301 of the base material 30, as shown in Fig. 14. A protective layer 75 may be formed to cover the mask layer 40, as shown in Fig. 14.

[0135] The second resist layer 71 may be a photoresist. In this case, first, the second resist layer 71 is formed on the first surface 301 by coating the first surface 301 with a liquid resist material. After coating, a step of heating the second resist layer 71 may be performed. Subsequently, a photolithography process is performed in which the second resist layer 71 is exposed and developed. As a result, the second resist layer 71 is formed on a portion of the first surface 301 corresponding to the first protrusion 37.

[0136] The second resist layer 71 may be a silicon oxide film partially formed on the first surface 301. The silicon oxide film is formed, for example, by partially performing a thermal oxidation treatment on the first surface 301. The silicon oxide film may be formed on the base material 30 before the intermediate layer 50 is laminated on the base material 30.

[0137] 15, the first surface 301 of the base material 30 is etched. By etching the portions of the base material 30 that are not covered with the second resist layer 71, first protrusions 37 are formed on the first surface 301. The etching may be dry etching using an etching gas.

[0138] Subsequently, an opening forming step is carried out. In the opening forming step, a third resist layer 72 may be formed partially on the first surface 301, as shown in Fig. 16. A resist opening 721 is formed in a portion of the third resist layer 72 corresponding to the first opening 31.

[0139] The third resist layer 72 may be a photoresist or a silicon oxide film.

[0140] In the opening forming step, as shown in FIG. 17, the substrate 30 is etched from the first surface 301 side to form the first opening 31 in the substrate 30. The etching may be dry etching using an etching gas. If the intermediate layer 50 is resistant to the etchant, the etching is prevented from progressing to the mask layer 40, as shown in FIG. 17. The etching gas is, for example, SF gas.

[0141] 18, an intermediate layer removal step is performed to remove a portion of the intermediate layer 50. The intermediate layer removal step is performed by supplying an etchant for the intermediate layer 50 to the first opening 31. The intermediate layer 50 that overlaps the first opening 31 in plan view is removed. The removal of the intermediate layer 50 may be performed by dry etching using an etching gas. The dry etching may be reactive ion etching.

[0142] Next, a step of removing the third resist layer 72 and the protective layer 75 is performed, thereby obtaining the mask 20. The order of these steps is not particularly limited. Figure 19 is a cross-sectional view showing the mask 20 in a state where the third resist layer 72 and the protective layer 75 have been removed.

[0143] Subsequently, a connecting step is carried out to connect the mask 20 to the first frame 60. The connecting step includes, for example, a measuring step, an angle adjusting step, and a fixing step.

[0144] In the measurement step, the positions of the first reference points P11, P12 and the second reference point P2 in the thickness direction D3 of the mask 20 are measured. Fig. 20 is a cross-sectional view showing an example of the measurement step. In the measurement step, the mask 20 is positioned so that the first protrusions 37 of the base material 30 are in contact with the second frame surface 602 of the first frame 60. In the measurement step, the portions of the base material 30 other than the first protrusions 37 do not need to be in contact with the second frame surface 602 of the first frame 60.

[0145] In the measurement step, the positions of the first reference points P11, P12 and the second reference point P2 in the thickness direction D3 of the mask 20 may be measured using a laser displacement meter 80. The laser displacement meter 80 emits a laser beam L1 toward the fourth surface 402 of the mask layer 40 of the mask 20. The laser beam L1 may travel along a normal to the fourth surface 402 and be incident on the fourth surface 402. The laser displacement meter 80 detects light beam L2 that is reflected by the mask layer 40 and returns to the laser displacement meter 80. The laser displacement meter 80 may calculate the position in the thickness direction D3 of the portion of the fourth surface 402 on which the laser beam L1 is incident, based on the angle of the light beam L2 incident on the laser displacement meter 80.

[0146] An eleventh distance ΔZ11 and a twelfth distance ΔZ12 are calculated based on the positions of the first reference points P11, P12 and the second reference point P2 in the thickness direction D3 of the mask 20. The eleventh distance ΔZ11 is the distance in the thickness direction D3 between the eleventh reference point P11 and the second reference point P2. The twelfth distance ΔZ12 is the distance in the thickness direction D3 between the twelfth reference point P12 and the second reference point P2.

[0147] 21 , a portion of the second surface 302 in the outer region 35 of the base material 30 is pressed toward the first frame 60. For example, a portion of the second surface 302 adjacent to an eleventh reference point P11 may be pressed toward the first frame 60 with a force F11. For example, a portion of the second surface 302 adjacent to a twelfth reference point P12 may be pressed toward the first frame 60 with a force F12. The pressing changes the angle of the first surface 301 of the base material 30 with respect to the frame second surface 602.

[0148] In the angle adjustment process, with the first protrusion 37 in contact with the frame second surface 602, a portion of the second surface 302 of the outer region 35 that does not overlap the first protrusion 37 in a planar view may be pressed toward the first frame 60. As shown in Fig. 21 , when a portion of the outer region 35 positioned outward of the first protrusion 37 in a planar view is pressed, the inner region 36 is pressed up relative to the outer region 35, generating a pushing-up distance ΔZ1.

[0149] The angle of the first surface 301 of the base material 30 with respect to the frame second surface 602 is adjusted so that the distance in the thickness direction D3 between the first reference points P11, P12 and the second reference point P2 is reduced. For example, the angle adjustment process may be performed so that both the eleventh distance ΔZ11 and the twelfth distance ΔZ12 are equal to or less than a first threshold value. The first threshold value is, for example, 10.0 μm, and may also be 7.0 μm, 5.0 μm, or 3.0 μm.

[0150] 21 , in the angle adjustment step, the second frame 65 in contact with the second surface 302 of the base material 30 may be pressed toward the first frame 60. By pressing the second frame 65, a portion of the second surface 302 in the outer region 35 of the base material 30 is pressed toward the first frame 60.

[0151] 21 , in the angle adjustment step, the outer region 35 may be pressed so that the first outer edge 3011 of the first surface 301 of the base material 30 does not contact the second frame surface 602 of the first frame 60. Although not shown, in the angle adjustment step, the outer region 35 may be pressed so that the first outer edge 3011 of the first surface 301 of the base material 30 contacts the second frame surface 602 of the first frame 60. When the first outer edge 3011 of the first surface 301 of the base material 30 contacts the second frame surface 602 of the first frame 60, the backward tilt angle θ1 is equal to the maximum backward tilt angle θ10.

[0152] After the angle adjustment step, a fixing step is performed. In the fixing step, the base material 30 is fixed to the first frame 60. The base material 30 may be fixed to the first frame 60 while maintaining the angle adjusted in the angle adjustment step.

[0153] The fixing step may include a coating step and a curing step. In the coating step, an adhesive is applied between the first surface 301 of the outer region 35 of the base material 30 and the second frame surface 602 of the first frame 60. The adhesive may be, for example, photocurable.

[0154] In the curing process, the adhesive is cured. If the adhesive is photocurable, light such as ultraviolet light is irradiated onto the adhesive. The light irradiation hardens the adhesive, forming an adhesive layer 70. In this manner, a mask device 15 is obtained, which includes a substrate 30 including an outer region 35 tilted relative to the first frame 60.

[0155] 23 is a plan view showing an example of the second frame 65. The second frame 65 may be located at the exit surface 202 of the mask 20. The first frame 60 includes a frame third surface 651 and a frame fourth surface 652. A portion of the frame third surface 651 faces the exit surface 202 of the mask 20. The frame fourth surface 652 is located on the opposite side of the frame third surface 651.

[0156] The second frame 65 may be formed with one fourth opening 66 penetrating from the frame third surface 651 to the frame fourth surface 652. The one fourth opening 66 overlaps with a plurality of first openings 31 in a plan view.

[0157] After the fixing step, the second frame 65 may be separated from the mask 20. The mask apparatus 15 ready for use may not include the second frame 65.

[0158] In this embodiment, the first surface 301 of the outer region 35 of the base material 30 of the mask 20 includes an inclined surface inclined with respect to the frame second surface 602. For example, the outer region 35 has a backward tilt angle θ1. As a result, a portion of the inner region 36 is pushed up relative to the outer region 35 in the thickness direction D3. A portion of the fluctuation in the position of the mask layer 40 in the thickness direction D3 caused by the bending of the outer region 35 due to its own weight is canceled by the backward tilt angle θ1. As a result, the amount of fluctuation in the positions of the plurality of second openings 41 in the thickness direction D3 is suppressed.

[0159] A method for manufacturing a device using the mask 20 will now be described. The manufacturing method includes an alignment step and a deposition step.

[0160] In the alignment step, the position of the mask 20 relative to the substrate 110 is adjusted. The position of the mask 20 relative to the substrate 110 may be calculated based on the plurality of alignment marks 39 of the mask 20. In this embodiment, the amount of variation in the positions of the plurality of second openings 41 in the mask layer 40 in the thickness direction D3 caused by bending of the outer region 35 due to its own weight is suppressed. By suppressing the amount of variation, it is easier to adjust the positions of the plurality of second openings 41 in the mask layer 40 relative to the substrate 110 in the alignment step.

[0161] In the deposition process, the deposition material that passes through the second openings 41 in the mask layer 40 is deposited on the first surface 111 of the substrate 110, thereby forming a plurality of deposition layers on the substrate 110. The higher the positional accuracy of the second openings 41, the higher the positional accuracy of the deposition layers formed on the substrate 110.

[0162] The above-described embodiment can be modified in various ways. Below, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for corresponding parts in the above-described embodiment. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in modified examples, the description of those effects may be omitted.

[0163] 24 is a cross-sectional view showing an example of the angle adjustment step. In the angle adjustment step, a pin 68 inserted into a through-hole 67 formed in the second frame 65 may press a portion of the second surface 302 of the outer region 35 of the base material 30 toward the first frame 60. The through-hole 67 may be located outward from the first protrusion 37 in plan view. In this case, the pin 68 presses a portion of the outer region 35 located outward from the first protrusion 37 in plan view.

[0164] 25 is a plan view showing the second frame 65 of FIG. 24. The second frame 65 may include a plurality of through holes 67. The plurality of through holes 67 may be arranged so as to surround the center point of the base material 30 in a plan view. "Surviving the center point" means that the center point of the base material 30 overlaps with an imaginary polygon formed by connecting the plurality of through holes 67.

[0165] 26 is a plan view showing an example of the mask 20 when viewed from the incident surface side. The substrate 30 may include a plurality of first protrusions 37 located on the first surface 301. The plurality of first protrusions 37 may be arranged so as to surround the center point of the substrate 30 in a plan view. "Surviving the center point" means that the center point of the substrate 30 overlaps with an imaginary polygon formed by connecting the plurality of first protrusions 37.

[0166] Fig. 27 is a cross-sectional view showing an example of the outer region 35 of the base material 30. Fig. 28 is a cross-sectional view showing an example of the outer region 35 of the base material 30 and the first frame 60. The first protrusion 37 may include a curved surface 372. The curved surface 372 may be in contact with the second frame surface 602 of the first frame 60. The angle adjustment process is facilitated by the first protrusion 37 of the base material 30 including the curved surface 372.

[0167] 29 is a cross-sectional view showing an example of the outer region 35 of the base material 30. The first protrusion 37 may be located on the first inner edge 3012 of the first surface 301. In other words, the side surface of the first protrusion 37 may form part of the first wall surface 32. When the first protrusion 37 is located on the first inner edge 3012, the distance K1 becomes large.

[0168] FIG. 30 is a cross-sectional view showing an example of the outer region 35 of the substrate 30. The first surface 301 of the outer region 35 may include a first protrusion 37 and a second protrusion 38. The second protrusion 38 is located at a different position from the first protrusion 37 in the radial direction of the substrate 30. In other words, the distance from the second protrusion 38 to the center point of the substrate 30 is different from the distance from the first protrusion to the center point. The first protrusion 37 and the second protrusion 38 may be aligned in the radial direction of the substrate 30. For example, the first protrusion 37 and the second protrusion 38 may be aligned in the direction of a straight line that passes through the center point of the substrate 30 and extends in the first direction D1. Both the first protrusion 37 and the second protrusion 38 may be located between the first outer edge 3011 and the first inner edge 3012.

[0169] In the thickness direction D3, the first protrusion 37 has a first height H1, and the second protrusion 38 has a second height H2. The second height H2 may be different from the first height H1. For example, the second height H2 may be smaller than the first height H1. In the angle adjustment process described above, of the first protrusion 37 and the second protrusion 38, at least the first protrusion 37 may be in contact with the second frame surface 602 of the first frame 60.

[0170] The first protrusion 37 may be located more inward than the second protrusion 38 in a plan view. In the angle adjustment step described above, a portion of the outer region 35 may be pressed toward the first frame 60 so that the second protrusion 38 approaches the second frame surface 602 of the first frame 60. In this case, the inclined surface of the first surface 301 of the base material 30 has a rearward tilt angle θ1.

[0171] In the angle adjustment process, the outer region 35 may be pressed so that the first protrusion 37 contacts the frame second surface 602 of the first frame 60 but the second protrusion 38 does not contact the frame second surface 602. In the angle adjustment process, the outer region 35 may be pressed so that both the first protrusion 37 and the second protrusion 38 contact the frame second surface 602. When both the first protrusion 37 and the second protrusion 38 contact the frame second surface 602, the rearward tilt angle θ1 is equal to the maximum rearward tilt angle θ10. In the example shown in FIG. 30 , the maximum rearward tilt angle θ10 is the angle that the line SL3 forms with the first surface 301 of the outer region 35. The line SL1 is an imaginary line tangent to the first protrusion 37 and the second protrusion 38.

[0172] 30, symbol K3 is the distance in the first direction D1 between the first protrusion 37 and the second protrusion 38. The greater the ratio of the difference between the first height H1 and the second height H2 to the distance K3, the greater the maximum rearward tilt angle θ10.

[0173] 31 is a cross-sectional view showing an example of the outer region 35 of the base material 30 and the first frame 60. The outer region 35 may be inclined with respect to the frame second surface 602 so that the distance between the first surface 301 of the outer region 35 and the frame second surface 602 of the first frame 60 becomes narrower toward the inside. In this case, the inclination angle θ2 is also referred to as a forward tilt angle θ2.

[0174] The forward tilt angle θ2 of the outer region 35 is, for example, 0.01° or more, or may be 0.05° or more, 0.10° or more, or 0.20° or more. The forward tilt angle θ2 of the outer region 35 is, for example, 1.00° or less, or may be 0.80° or less, 0.60° or less, or 0.40° or less.

[0175] In FIG. 31 , the symbol ΔZ1 represents the distance in the thickness direction D3 between a portion of the outer region 35 and a portion of the inner region 36 that face each other in the first direction D1 in one first opening 31. The position of the outer region 35 in the thickness direction D3 is determined by the position of the second surface 302 that contacts the first wall surface 32. The position of the inner region 36 in the thickness direction D3 is determined by the position of the second surface 302 that contacts the first wall surface 32. When the outer region 35 has a forward tilt angle θ2 as shown in FIG. 31 , the inner region 36 can be positioned lower than the outer region 35. The distance ΔZ2 is also referred to as a push-down distance ΔZ2.

[0176] The pressing distance ΔZ2 of the substrate 30 is, for example, 0.1 μm or more, or may be 0.5 μm or more, 2.0 μm or more, or 10.0 μm or more. The pressing distance ΔZ2 of the substrate 30 is, for example, 50.0 μm or less, or may be 40.0 μm or less, 30.0 μm or less, or may be 20.0 μm or less.

[0177] Depending on the state of the base material 30, it may be advantageous to press the inner region 36 downward relative to the outer region 35. The configuration in which the inner region 36 is pressed downward relative to the outer region 35 may be adopted when the base material 30 has a problem different from the problem in the configuration in which the inner region 36 is pressed upward relative to the outer region 35. In the example shown in Fig. 31 , in the angle adjustment step, a portion of the outer region 35 located more inward than the first protrusion 37 in a plan view may be pressed.

[0178] 31 , in the angle adjustment process, the outer region 35 may be pressed so that the first protrusion 37 comes into contact with the frame second surface 602 of the first frame 60, but the first surface 301 other than the first protrusion 37 does not come into contact with the frame second surface 602. In the angle adjustment process, the outer region 35 may be pressed so that the first protrusion 37 and parts of the first surface 301 other than the first protrusion 37 all come into contact with the frame second surface 602.

[0179] 32 is a cross-sectional view showing an example of the outer region 35 of the base material 30. The first protrusion 37 may be located at the first outer edge 3011 of the first surface 301. In other words, the side surface of the first protrusion 37 may form part of the outer edge 303. When the first protrusion 37 is located at the first outer edge 3011, the distance K2 becomes large.

[0180] 33 is a cross-sectional view showing an example of the outer region 35 of the base material 30. The first surface 301 of the outer region 35 may include a first protrusion 37 and a second protrusion 38. The second height H2 of the second protrusion 38 may be smaller than the first height H1 of the first protrusion 37. The first protrusion 37 may be positioned outward of the second protrusion 38 in a planar view. In the angle adjustment step, a portion of the outer region 35 may be pressed toward the first frame 60 so that the second protrusion 38 approaches the second frame surface 602 of the first frame 60. In this case, the inclined surface of the first surface 301 of the base material 30 has a forward tilt angle θ2.

[0181] In the angle adjustment process, the outer region 35 may be pressed so that the first protrusion 37 contacts the frame second surface 602 of the first frame 60 but the second protrusion 38 does not contact the frame second surface 602. In the angle adjustment process, the outer region 35 may be pressed so that both the first protrusion 37 and the second protrusion 38 contact the frame second surface 602. When both the first protrusion 37 and the second protrusion 38 contact the frame second surface 602, the forward tilt angle θ2 is equal to the maximum forward tilt angle θ20. In the example shown in FIG. 33 , the maximum forward tilt angle θ20 is the angle that the line SL3 forms with the first surface 301 of the outer region 35. The line SL3 is an imaginary line tangent to the first protrusion 37 and the second protrusion 38.

[0182] 34 is a cross-sectional view showing an example of the outer region 35 of the base material 30. The second height H2 of the second protrusion 38 may be the same as the first height H1 of the first protrusion 37. In the angle adjustment step, the angle of the first surface 301 of the base material 30 with respect to the frame second surface 602 may be changed by contracting the first protrusion 37 or the second protrusion 38 in the thickness direction D3. For example, by pressing a portion of the second surface 302 toward the first frame 60, the second protrusion 38 contracts in the thickness direction D3, resulting in a backward tilt angle θ1 in the outer region 35.

[0183] Fig. 35 is a cross-sectional view showing an example of the mask device 15. As shown in Fig. 35, the thickness of the inner region 36 may be the same as the thickness of the portion of the outer region 35 where the first protrusions 37 are formed. As shown in Fig. 5 above, the thickness of the inner region 36 may be smaller than the thickness of the portion of the outer region 35 where the first protrusions 37 are formed.

[0184] It is also possible to combine the multiple components disclosed in the above-described embodiments and modifications as needed, or to delete some of the components disclosed in the above-described embodiments and modifications.

[0185] For example, the curved surface 372 of the primary projection 37 of the base material 30 shown in FIG. 27 may be adopted for the other primary projections 37.

Claims

1. A mask, a substrate including a first surface, a second surface opposite the first surface, and a plurality of first openings extending from the first surface to the second surface; a mask layer including a third surface facing the second surface and a fourth surface located on the opposite side of the third surface; the substrate comprises silicon or a silicon compound; the mask layer includes a plurality of second openings that overlap the first openings in a plan view and penetrate from the third surface to the fourth surface; the base material includes an inner region located between the plurality of first openings in a plan view, and an outer region extending along an outer edge of the base material and surrounding the plurality of first openings and the inner region in a plan view, The mask, wherein the first surface of the outer region includes at least one first protrusion.

2. the first surface of the outer region includes a first inner edge and a first outer edge; The mask of claim 1 , wherein the first protrusion is located between the first inner edge and the first outer edge.

3. the first surface of the outer region includes a first inner edge and a first outer edge; The mask of claim 1 , wherein the first protrusion is located on the first inner edge.

4. 4. The mask according to claim 2, wherein an angle formed by an imaginary line tangent to the first outer edge and the first protrusion with respect to the first surface of the outer region is equal to or greater than 0.01° and equal to or less than 1.00°.

5. the first surface of the outer region includes a first inner edge and a first outer edge; The mask of claim 1 , wherein the first protrusion is located on the first outer edge.

6. The mask according to claim 2 or 5, wherein an angle formed by an imaginary line tangent to the first inner edge and the first protrusion with respect to the first surface of the outer region is equal to or greater than 0.01° and equal to or less than 1.00°.

7. the first surface of the outer region includes a second protrusion; The mask of claim 1 , wherein a distance from the second protrusion to a center point of the substrate is different from a distance from the first protrusion to the center point.

8. the first protrusion has a first height; The mask of claim 7 , wherein the second protrusions have a second height that is less than the first height.

9. The mask according to claim 8 , wherein an angle formed by an imaginary line tangent to the first protrusion and the second protrusion and the first surface of the outer region is equal to or greater than 0.01° and equal to or less than 1.00°.

10. The mask according to claim 1 , wherein the first projections extend continuously so as to surround a center point of the substrate in a plan view.

11. The mask according to claim 1 , wherein the at least one first projection includes a plurality of the first projections arranged so as to surround a center point of the substrate in a plan view.

12. A method for manufacturing a mask device, comprising: providing a mask; a connecting step of connecting the mask to a first frame, The mask is a substrate including a first surface, a second surface opposite the first surface, and a plurality of first openings extending from the first surface to the second surface; a mask layer including a third surface facing the second surface and a fourth surface located on the opposite side of the third surface; the substrate comprises silicon or a silicon compound; the mask layer includes a plurality of second openings that overlap the first openings in a plan view and penetrate from the third surface to the fourth surface; the base material includes an inner region located between the plurality of first openings in a plan view, and an outer region extending along an outer edge of the base material and surrounding the plurality of first openings and the inner region in a plan view, the first frame includes a frame first surface and a frame second surface located opposite the frame first surface and facing the first surface of the substrate; A method for manufacturing a mask device, wherein the connection process includes an angle adjustment process of pressing a portion of the second surface of the outer region of the base material toward the first frame to change the angle of the first surface of the base material relative to the second surface of the frame.

13. The method for manufacturing a mask device according to claim 12 , wherein the connecting step includes a curing step of curing an adhesive located between the first surface of the outer region of the base material and the second frame surface of the first frame after the angle adjusting step.

14. the first surface of the outer region includes at least one first protrusion; 13. The method for manufacturing a mask device according to claim 12, wherein in the angle adjustment process, with the first protrusion in contact with the second surface of the frame, the portion of the second surface of the outer region that does not overlap with the first protrusion in a planar view is pressed toward the first frame.

15. The method for manufacturing a mask device according to claim 12 , wherein in the angle adjustment step, a second frame in contact with the second surface of the base material is pressed toward the first frame.

16. 13. The method for manufacturing a mask device according to claim 12, wherein in the angle adjustment process, a pin inserted into a through hole formed in a second frame that contacts the second surface of the base material presses the portion of the second surface of the outer region of the base material toward the first frame.

17. the connecting step includes a measuring step of measuring positions of a first reference point and a second reference point of the mask layer in a thickness direction of the mask; 17. The method for manufacturing a mask device according to claim 12, wherein in the angle adjustment process, the portion of the second surface of the outer region of the base material is pressed toward the first frame so that the distance in the thickness direction between the first reference point and the second reference point is reduced.

18. 1. A mask device, comprising: With a mask, a first frame connected to the mask; The mask is a substrate including a first surface, a second surface opposite the first surface, and a plurality of first openings extending from the first surface to the second surface; a mask layer including a third surface facing the second surface and a fourth surface located on the opposite side of the third surface; the substrate comprises silicon or a silicon compound; the mask layer includes a plurality of second openings that overlap the first openings in a plan view and penetrate from the third surface to the fourth surface; the base material includes an inner region located between the plurality of first openings in a plan view, and an outer region extending along an outer edge of the base material and surrounding the plurality of first openings and the inner region in a plan view, the first frame includes a frame first surface and a frame second surface located opposite the frame first surface and facing the first surface of the substrate; A mask device, wherein the first surface of the outer region includes a portion that is inclined relative to the frame second surface.

19. 20. The mask apparatus of claim 18, wherein the first surface of the outer region includes at least one first protrusion that contacts the frame second surface.

Images