Substrate processing apparatus and semiconductor manufacturing facility including the same

Abstract

To provide a substrate processing apparatus for minimizing occurrence of turbulent flow in an edge direction of a substrate, and to provide a semiconductor manufacturing facility including the substrate processing apparatus.SOLUTION: A substrate processing apparatus according to the invention includes: an upper module including a first supply port for providing a supercritical fluid to a substrate processing space; a lower module coupled to the upper module and including a second supply port for providing the supercritical fluid to the substrate processing space; a shielding plate disposed in the substrate processing space; a plate support part coupled to the lower module and supporting the shielding plate; and a first substrate support part coupled to the shielding plate and supporting the substrate. A fluid flow path between the lower module and the shielding plate includes a throat structure which changes a cross-sectional size of the fluid flow path.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus for performing a drying process and a semiconductor manufacturing facility including the same, and more particularly to a substrate processing apparatus for minimizing the generation of turbulence and a semiconductor manufacturing facility including the same. [Background technology]

[0002] In manufacturing semiconductors, a drying process using a supercritical fluid can be performed after a cleaning process using a chemical to prevent pattern collapse.

[0003] However, when the supercritical fluid reaches the top of the substrate, turbulent flow occurs near the edge of the substrate, and the pattern may be subjected to shear stress. This shear stress can cause pattern collapse at the edge region of the substrate. Summary of the Invention [Problem to be solved by the invention]

[0004] The present invention has been made in consideration of the above-mentioned problems with conventional substrate processing apparatuses, and an object of the present invention is to provide a substrate processing apparatus and semiconductor manufacturing equipment including the same that minimizes the generation of turbulence. [Means for solving the problem]

[0005] In order to achieve the above object, a substrate processing apparatus according to the present invention includes an upper module including a first supply port for supplying a supercritical fluid to a substrate processing space, a lower module coupled to the upper module and including a second supply port for supplying the supercritical fluid to the substrate processing space, a blocking plate disposed in the substrate processing space, a plate support coupled to the lower module and supporting the blocking plate, and a first substrate support coupled to the blocking plate and supporting a substrate, wherein a fluid flow path between the lower module and the blocking plate includes a throat structure that varies the size of its cross section.

[0006] In order to achieve the above object, the present invention provides a semiconductor manufacturing equipment including a cleaning process chamber for wet-cleaning a substrate using a chemical, and a drying process chamber for drying the substrate on which the chemical remains using a supercritical fluid, wherein the drying process chamber includes an upper module including a first supply port for supplying the supercritical fluid to a substrate processing space, a lower module coupled to the upper module including a second supply port for supplying the supercritical fluid to the substrate processing space, a blocking plate disposed in the substrate processing space, a plate support coupled to the lower module and supporting the blocking plate, and a first substrate support coupled to the blocking plate and supporting the substrate, wherein a fluid flow path between the lower module and the blocking plate includes a throat structure for varying the cross-sectional size thereof.

[0007] In order to achieve the above object, a substrate processing apparatus according to the present invention includes an upper module including a first supply port for supplying a supercritical fluid to a substrate processing space, a lower module coupled to the upper module and including a second supply port for supplying the supercritical fluid to the substrate processing space, a blocking plate disposed in the substrate processing space, a plate support coupled to the lower module and supporting the blocking plate, and a first substrate support coupled to the blocking plate and supporting a substrate, wherein a fluid transfer path between the lower module and the blocking plate includes a throat structure for varying a size of a cross section thereof, and the throat structure has a first protrusion. the first protrusion is formed on at least one of the blocking plate and the lower module, the blocking plate includes a filler body, a filler volume increasing plate stacked on the filler body, and a filler cap stacked on the filler volume increasing plate, the filler volume increasing plate and the filler cap move horizontally, the filler volume increasing plate and the filler cap are divided vertically, the divided filler caps move in a different direction from the divided filler volume increasing plates, and at least one of the first substrate support part and the plate support part moves up and down. [Effects of the Invention]

[0008] According to the substrate processing apparatus and semiconductor manufacturing equipment including the same according to the present invention, a blocking plate having a throat structure can be provided with a structural modification that can minimize turbulence when a supercritical fluid reaches the top of the substrate, and the process performance can be improved by flexibly providing a structural modification to the blocking plate according to variable circumstances such as process conditions and the structure of the process chamber. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a first exemplary top view illustrating a semiconductor manufacturing facility according to an embodiment of the present invention; [Figure 2] FIG. 2 is a second exemplary top view illustrating a semiconductor manufacturing facility according to an embodiment of the present invention. [Figure 3] 1 is a first exemplary view illustrating a process chamber according to an embodiment of the present invention. [Figure 4] FIG. 2 is a second exemplary view illustrating a process chamber according to an embodiment of the present invention. [Figure 5] FIG. 3 is a third exemplary view illustrating a process chamber according to an embodiment of the present invention. [Figure 6] FIG. 3 is a third exemplary view illustrating a process chamber according to an embodiment of the present invention. [Figure 7] 10A and 10B are exemplary diagrams illustrating the effect of the throat structure according to the embodiment of the present invention. [Figure 8] 1 is a first exemplary view illustrating a throat structure according to an embodiment of the present invention. FIG. [Figure 9] FIG. 2 is a second exemplary view illustrating a throat structure according to an embodiment of the present invention. [Figure 10] FIG. 10 is a third exemplary view illustrating a throat structure according to an embodiment of the present invention. [Figure 11] FIG. 4 is a fourth exemplary view illustrating a throat structure according to an embodiment of the present invention. [Figure 12] FIG. 5 is a fifth exemplary view illustrating a throat structure according to an embodiment of the present invention. [Figure 13] FIG. 6 is a sixth exemplary view illustrating a throat structure according to an embodiment of the present invention. [Figure 14] FIG. 7 is a seventh exemplary view illustrating a throat structure according to an embodiment of the present invention. [Figure 15] 8 is an eighth exemplary view illustrating a throat structure according to an embodiment of the present invention. FIG. [Figure 16] 1 is a first exemplary view illustrating a structure of a blocking plate according to an embodiment of the present invention. [Figure 17] 10 is a second exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. FIG. [Figure 18] 10 is a third exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. FIG. [Figure 19]10 is a fourth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. FIG. [Figure 20] 10 is a fifth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. FIG. [Figure 21] 10 is a sixth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. FIG. [Figure 22] 7 is a seventh exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. FIG. [Figure 23] 8 is an eighth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. FIG. [Figure 24] FIG. 9 is a ninth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. [Figure 25] 10 is a tenth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. FIG. [Figure 26] FIG. 11 is an eleventh exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. [Figure 27] FIG. 12 is a twelfth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. [Figure 28] FIG. 13 is a thirteenth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. [Figure 29] FIG. 14 is a fourteenth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. [Figure 30] FIG. 15 is a fifteenth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. [Figure 31] FIG. 16 is a 16th exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. [Figure 32] FIG. 17 is a seventeenth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. [Figure 33] 18 is an exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. FIG. [Figure 34] 4 is an exemplary view illustrating a second substrate supporting portion according to an embodiment of the present invention. FIG. [Figure 35] 10A and 10B are exemplary views illustrating a plate support according to an embodiment of the present invention; [Figure 36] 1 is a flowchart illustrating an example of a supercritical drying process according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0010] Next, specific examples of embodiments for carrying out the substrate processing apparatus and semiconductor manufacturing equipment including the same according to the present invention will be described with reference to the drawings.

[0011] The same reference numerals are used for the same components in the drawings, and redundant explanations relating thereto will be omitted.

[0012] As semiconductor patterns become finer, the aspect ratio of the patterns increases, making it more difficult to improve pattern collapse. The present invention provides a substrate processing apparatus that reduces pattern collapse in the edge region of a substrate, and a semiconductor manufacturing facility including the same.

[0013] FIG. 1 is a first exemplary top view illustrating a semiconductor manufacturing facility according to an embodiment of the present invention. Referring to FIG. 1, the semiconductor manufacturing facility 100 includes a load port module 110, an index module 120, a buffer module 130, a transfer module 140, a first section 150, and a second section 160. The first direction D1 and the second direction D2 form a two-dimensional plane. The first direction D1 is the X-axis direction, and the second direction D2 is the Y-axis direction. The first direction D1 is the left-right direction, and the second direction D2 is the front-rear direction. Alternatively, the first direction D1 may be the front-to-rear direction, and the second direction D2 may be the left-to-right direction. The third direction D3 forms a three-dimensional solid together with the first direction D1 and the second direction D2. The third direction D3 is a direction perpendicular to the plane formed by the first direction D1 and the second direction D2. The third direction D3 is the Z-axis direction. The third direction D3 is the up-down direction.

[0014] The semiconductor manufacturing equipment 100 is equipment that performs a photo process on a substrate. The semiconductor manufacturing facility 100 includes a chamber for performing a cleaning process and a chamber for performing a drying process. However, the present invention is not limited to this, and the semiconductor manufacturing equipment 100 may include only a chamber for performing a drying process. In addition to the two chambers, the semiconductor manufacturing facility 100 may further include a chamber for performing an etching process. Alternatively, the semiconductor manufacturing facility 100 may further include a chamber for performing a heat treatment process. In the following, an example will be described in which the semiconductor manufacturing equipment 100 includes a chamber for performing a cleaning process and a chamber for performing a drying process.

[0015] The load port module 110 is provided so that a container can be placed thereon. The container houses a plurality of substrates. For example, the substrate is a wafer, and the container is a FOUP. In the load port module 110, containers are loaded or unloaded. In the load port module 110, substrates housed in containers are loaded or unloaded. A plurality of containers are placed on the load port module 110. Multiple containers may carry the same type of item. For example, the first container, the second container, and the third container each carry wafers. However, the present invention is not limited to this, and each container may carry different types of items. For example, a first container may carry wafers, a second container may carry wafer-type sensors, and a third container may carry consumable parts such as focus rings.

[0016] The index module 120 is disposed behind the load port module 110 . The index module 120 is provided as an interface between the load port module 110 and the buffer module 130 to allow substrates to be transferred in and out. Although not shown in FIG. 1, the index module 120 may include a first transport robot that loads and unloads substrates. The first transfer robot carries in and out the substrate under atmospheric pressure. The load port module 110 and the index module 120 constitute an equipment front-end module (EFEM).

[0017] The buffer module 130 temporarily stores the substrates. The buffer module 130 stores unprocessed substrates before they are transported to the first section 150 . The buffer module 130 stores processed substrates before they are transported to the load port module 110 . The buffer module 130 is located after the index module 120 . The buffer module 130 is disposed between the index module 120 and the transfer module 140 . However, the present embodiment is not limited to this. Referring to FIG. 2, the buffer module 130 is located inside the index module 120 . The buffer module 130 is adjacent to the transfer module 140 within the index module 120 .

[0018] FIG. 2 is a second exemplary top view illustrating a semiconductor manufacturing facility according to an embodiment of the present invention. The following description will be made with reference to FIGS. The transfer module 140 is provided as an interface between the first section 150 and the second section 160 for loading and unloading substrates. The transfer module 140 is provided as an interface between the buffer module 130 and the first section 150 for loading and unloading substrates. The transfer module 140 is provided as an interface between the buffer module 130 and the second section 160 for loading and unloading substrates. The transfer module 140 is surrounded by the index module 120 , a first portion 150 , and a second portion 160 . Although not shown in FIG. 2, the transfer module 140 may include a second transport robot for loading and unloading substrates. The first and second transport robots can load and unload substrates in the same environment. The second transfer robot carries in and out the substrate under atmospheric pressure.

[0019] The first section 150 performs a cleaning process on the substrate. The first portion 150 includes a first process chamber 200 . Alternatively, the first portion 150 includes a second process chamber 300 . The first process chamber 200 and the second process chamber 300 use chemicals to clean the substrate. The first process chamber 200 and the second process chamber 300 clean the substrate in a wet manner. Although not shown in FIGS. 1 and 2, a plurality of first process chambers 200 and a plurality of second process chambers 300 may be provided. A more detailed description of the first process chamber 200 and the second process chamber 300 will be provided below.

[0020] The second section 160 performs a drying process on the substrate. The second section 160 includes a third process chamber 400 . The third process chamber 400 uses a supercritical fluid to dry the substrate. For example, the supercritical fluid can be carbon dioxide (CO2). Although not shown in FIGS. 1 and 2, a plurality of third process chambers 400 may be provided. Further details regarding the third process chamber 400 will be provided below.

[0021] The first portion 150 and the second portion 160 are disposed on either side of the transfer module 140, with the transfer module 140 interposed therebetween. In this case, the first process chamber 200 or the second process chamber 300 is provided on one side of the transfer module 140, and the third process chamber 400 is provided on the other side of the transfer module 140. However, the present invention is not limited to this, and either one of the first process chamber 200 and the second process chamber 300 and the third process chamber 400 may be provided on either side of the transfer module 140 . Alternatively, either one of the first process chamber 200 and the second process chamber 300 and the third process chamber 400 may be provided on only one side of the transfer module 140 .

[0022] Although not shown in FIGS. 1 and 2, semiconductor manufacturing facility 100 includes a control device. The control device includes a processor that executes control over each component that makes up the semiconductor manufacturing equipment 100, a network that communicates with each component via wired or wireless communication, one or more instructions related to the functions and operations for controlling each component, a processing recipe including the instructions, and a memory means for storing various data. The control device further includes a user interface including an input means for an operator to input commands to manage the semiconductor manufacturing facility 100, and an output means for visualizing and displaying the operating status of the semiconductor manufacturing facility 100. The control device is provided as a computing device for data processing and analysis, command transmission, and the like.

[0023] The instructions may be provided in the form of a computer program or application. A computer program includes one or more instructions and is stored on a computer-readable recording medium. The instructions may include code generated by a compiler, code that may be executed by an interpreter, and so on. The storage means is provided as one or more storage media selected from a flash memory, an HDD, an SSD, a card-type memory, a RAM, an SRAM, a ROM, an EEPROM, a PROM, a magnetic memory, a magnetic disk, and an optical disk.

[0024] Next, the first process chamber 200 will be described. FIG. 3 is a first exemplary view illustrating a process chamber according to an embodiment of the present invention. Referring to FIG. 3, the first process chamber 200 includes a support part 210, a recovery part 220, a lifting part 230, and an injection part 240.

[0025] The first process chamber 200 uses chemicals to clean the substrate. The first process chamber 200 rotates the substrate using a spin head and provides chemicals onto the substrate using a nozzle. The first process chamber 200 is provided as a cleaning process chamber.

[0026] A chemical is a substance in a liquid state or a substance in a gaseous state. For example, the chemical may be an organic solvent if it is a substance in a liquid state. The chemicals may be highly volatile and generate a lot of fumes, or may contain substances that are highly viscous and have a high residual property. For example, the chemical may be selected from a substance containing an IPA (Iso-Propyl Alcohol) component, a substance containing a sulfuric acid component, a substance containing an ammonia water component, a substance containing a hydrofluoric acid component, a substance containing a phosphoric acid component, and the like. For example, if the chemical is a substance containing a sulfuric acid component, it may be an SPM containing a sulfuric acid component and a hydrogen peroxide component. For example, if the chemical is a substance containing an ammonia water component, it may be APM (Ammonia-Hydrogen Peroxide Mixture), which is an SC-1 cleaning solution. For example, if the chemical is a substance containing a hydrofluoric acid component, it may be DHF (Diluted Hydrogen Fluoride).

[0027] The support 210 supports the substrate W. The support part 210 rotates the substrate W in the horizontal direction (D1, D2) when the substrate W is processed. The support portion 210 is surrounded by a collection portion 220 . The support 210 includes a spin head 211 , a rotation shaft 212 , a first driving module 213 , a support pin 214 , and a guide pin 215 . The spin head 211 rotates along the rotation direction of the rotation shaft 212 . The spin head 211 is provided in the same shape as the substrate W, but this embodiment is not necessarily limited to this. The rotary shaft 212 generates a rotational force using the power provided by the first driving module 213 . The rotation shaft 212 rotates the spin head 211 , and the substrate W also rotates together with the spin head 211 .

[0028] Support pins 214 and guide pins 215 fix the substrate W on the spin head 211 . The support pins 214 support the bottom surface of the substrate W, and the guide pins 215 support the side surfaces of the substrate W. A plurality of support pins 214 and a plurality of guide pins 215 are provided on the spin head 211 . The plurality of support pins 214 may be arranged in an annular ring shape on the spin head 211 . The support pins 214 support the substrate W so that the substrate W does not come into contact with the upper surface of the spin head 211 . The guide pins 215 are provided as chucking pins, and support the substrate W so that the substrate W does not come off the spin head 211 due to rotation.

[0029] The recovery section 220 recovers the chemicals used to process the substrate W. The chemicals recovered by the recovery unit 220 can be reused. The collection section 220 may include multiple collection tanks. For example, the collection section 220 may include three collection tanks (221, 222, 223), such as a first collection tank 221, a second collection tank 222, and a third collection tank 223. The first collection tank 221, the second collection tank 222, and the third collection tank 223 are provided as bowls. The first collection tank 221, the second collection tank 222, and the third collection tank 223 are provided in an annular ring shape. The first collection tank 221 is disposed so as to surround the second collection tank 222 , and the second collection tank 222 is disposed so as to surround the third collection tank 223 . The first recovery tank 221, the second recovery tank 222, and the third recovery tank 223 can separate and recover different types of chemicals. For example, the first collection tank 221 may collect a first chemical liquid, the second collection tank 222 may collect a second chemical liquid, and the third collection tank 223 may collect a rinse liquid. The rinse solution can be IPA or DIW (De-Ionized Water).

[0030] Each of the collection tanks (221, 222, 223) includes an inlet (224, 225, 226) through which chemicals flow and an outlet (226) through which the chemicals are discharged. The discharge ports of the respective collection tanks (221, 222, 223) are connected to collection lines (227, 228, 229). Although not shown in FIG. 3, the recovery lines (227, 228, 229) may be connected to a reclamation facility that processes the chemicals so that they can be reused.

[0031] The lifting unit 230 lifts and lowers the collection unit 220 . The lifting unit 230 adjusts the height of the recovery unit 220 before and after the substrate W is processed. The lifting unit 230 adjusts the height of the recovery unit 220 depending on the type of chemical provided on the substrate W. It is also possible to adjust the height of the spin head 211 without adjusting the height of the recovery unit 220 . In this case, the first process chamber 200 does not need to include the elevator 230. The height of the spin head 211 can be adjusted by a rotation shaft 212 and a first driving module 213 . The lifting unit 230 includes a bracket 231 , a first lifting shaft 232 , and a second driving module 233 . The bracket 231 is fixed to the outer wall of the collection section 220 . The first lifting shaft 232 is connected to the bracket 231 and the second driving module 233 . The first lifting shaft 232 moves up and down using power provided by the second driving module 233 . The first lifting shaft 232 lifts and lowers the collection unit 220 via the bracket 231 .

[0032] The spray unit 240 supplies chemicals onto the substrate W. The jetting section 240 includes a plurality of nozzles. Each nozzle supplies a different type of chemical onto the substrate W. The ejection unit 240 includes a nozzle structure 241 , a nozzle support module 242 , a second lifting shaft 243 , a third driving module 244 , and a nozzle 245 . The nozzle structure 241 is mounted on the end of the nozzle support module 242 . The nozzle structure 241 includes a nozzle 245 . The nozzles 245 may be multiple. The nozzle structure 241 moves to a process position for discharging chemicals onto the substrate W. The nozzle structure 241 is otherwise moved to a standby position. The nozzle support module 242 and the second lifting shaft 243 connect the nozzle structure 241 and the third driving module 244 . The longitudinal direction of the nozzle support module 242 is different from the longitudinal direction of the second lift shaft 243 . The nozzle support module 242 has a length extending in the horizontal direction (D1 or D2), and the second lift shaft 243 has a length extending in the vertical direction D3.

[0033] The third driving module 244 moves the second lifting shaft 243 up and down. The third drive module 244 rotates the nozzle support module 242 . The third driving module 244 moves the nozzle structure 241 to a process position or a standby position via the nozzle support module 242 and the second lifting shaft 243 . Although not shown in FIG. 3, the first process chamber 200 may further include a chemical supply. The chemical supply is connected to the injection unit 240 to supply the chemical. The chemical supply is directly coupled to the nozzle structure 241 , but can also be coupled to the nozzle structure 241 via the nozzle support module 242 .

[0034] The first process chamber 200 is provided as a single-type facility. The first process chamber 200 is capable of processing substrates W individually and sequentially processing multiple substrates. The first portion 150 includes a second process chamber 300 instead of the first process chamber 200 . Alternatively, the first portion 150 includes both the first process chamber 200 and the second process chamber 300 . The second process chamber 300 is provided as a batch type facility. The second process chamber 300 is capable of processing multiple substrates simultaneously. When the first portion 150 includes the second process chamber 300, the semiconductor manufacturing facility 100 is provided as a hybrid facility.

[0035] FIG. 4 is a second exemplary view illustrating a process chamber according to an embodiment of the present invention. Referring to FIG. 4, the second process chamber 300 includes a processing bath 310 , a processing liquid supply source 320 , a processing liquid supply line 330 , a processing liquid discharge line 340 , and a temperature control unit 350 .

[0036] In the second process chamber 300, a plurality of substrates W stored in a storage container 360 are immersed in a processing bath 310 in which a chemical C is stored to process the substrates W. The second process chamber 300 prewets the substrates W. The second process chamber 300 etches a plurality of substrates W. The second process chamber 300 rinses the substrates W. Chemical C can be a chemical liquid with strong acid or base properties. For example, chemical C can be appropriately selected from among APM, which is an SC-1 cleaning solution, HPM (Hydrochloric acid-Hydrogen Peroxide Mixture), FPM (Hydrofluoric acid-Hydrogen Peroxide Mixture), DHF, a chemical solution for removing SiN, a chemical solution containing phosphoric acid, a chemical solution containing sulfuric acid, and the like. Chemical C can be appropriately selected from IPA, DIW, ozone water, and the like.

[0037] The treatment tank 310 includes an interior space 313 in which the chemical C is stored. The internal space 313 is formed by the bottom plate 311 and the side wall 312 . The processing tank 310 has an open top surface. The processing liquid source 320 supplies the chemical C. The processing solution supply line 330 connects the processing solution source 320 to the inner space 313 of the processing tank 310 . The processing liquid supply line 330 allows the chemical C supplied by the processing liquid supply source 320 to flow into the internal space 313 of the processing tank 310 . The processing liquid discharge line 340 discharges the chemical C used in processing the substrate W to the outside.

[0038] The temperature control unit 350 controls the temperature of the chemical C in the treatment bath 310 by generating cold or hot heat. For example, the temperature adjustment unit 350 can be a heater. The temperature control units 350 are provided on the bottom plate 311 and the side wall 312 of the treatment tank 310, respectively. The temperature control unit 350 is provided inside the bottom plate 311, but can also be provided on the surface of the bottom plate 311. Similarly, the temperature control unit 350 is provided inside the side wall 312, but it can also be provided on the surface of the side wall 312. The temperature control unit 350 may be provided on only one of the bottom plate 311 and the side wall 312 of the treatment tank 310 .

[0039] Next, the third process chamber 400 will be described. The third process chamber 400 is a substrate processing apparatus that dries the substrate W using a supercritical fluid. The substrate processing apparatus described throughout this specification refers to the third process chamber 400 in which a drying process is performed on the substrate W. 5 and 6 are third exemplary views illustrating a process chamber according to an embodiment of the present invention. FIG. 5 shows the third process chamber 400 when it is closed, and FIG. 6 shows the third process chamber 400 when it is open. Referring to Figures 5 and 6, the third process chamber 400 includes a chamber housing 410, a moving section 420, a second substrate support section 430, a first substrate support section 440, supply and exhaust ports 450, a blocking plate 460, a plate support section 470, and a heating section 480.

[0040] The supercritical process includes an etching process, a cleaning process, a drying process, etc. using a supercritical fluid. The third process chamber 400 performs a drying process using a supercritical fluid. The third process chamber 400 dries the substrate W after the rinsing process. After the rinsing step, chemicals may remain on the surface of the substrate W. The supercritical fluid dissolves the chemicals remaining on the substrate W and dries the substrate W. A supercritical fluid is a substance at a temperature and pressure above its critical point that has the diffusibility, viscosity, and surface tension of a gas, and the solubility of a liquid. Supercritical fluids include carbon dioxide (CO2), water (H2O), methane (CH4), ethane (C2H6), propane (C3H8), ethylene (C2H4), propylene (C2H2), methanol (C2H3OH), ethanol (C2H5OH), sulfur hexafluoride (SF6), acetone (C3H8O), and others. For example, the third process chamber 400 may use carbon dioxide (CO2) in a supercritical state.

[0041] The chamber housing 410 defines a processing space in which the supercritical drying process is performed. The processing space includes a process region 401 and a buffer region 402 . The process area 401 is located above the substrate W. The buffer region 402 is located below the substrate W. The chamber housing 410 is made of a material that can withstand high pressures above the critical pressure. The chamber housing 410 includes an upper module 410a and a lower module 410b. The upper module 410a includes a top wall and a first side wall. The upper wall of the upper module 410 a serves as the upper wall of the chamber housing 410 . The first sidewall of the upper module 410 a is provided as part of the sidewall of the chamber housing 410 . The lower module 410b includes a lower wall and a second side wall. The lower wall of the lower module 410 b serves as the lower wall of the chamber housing 410 . The second sidewall of the lower module 410b is provided as part of the sidewall of the chamber housing 410.

[0042] The upper module 410a is fixed, and the lower module 410b moves up and down. However, the present invention is not limited to this, and the upper module 410a may be raised and lowered, and the lower module 410b may be fixed. Alternatively, both the upper module 410a and the lower module 410b can be raised and lowered. The chamber housing 410 may be open or closed. Upon separation of the upper module 410a and the lower module 410b, the chamber housing 410 is opened. In this case, the substrate W is carried into or out of the internal space of the chamber housing 410. Upon coupling of the upper module 410a and the lower module 410b, the chamber housing 410 is closed. In this case, the substrate W is processed in the internal space of the chamber housing 410 . The substrate W that is carried into the internal space of the chamber housing 410 still has the cleaning liquid remaining thereon. For example, the cleaning liquid can be IPA or DIW.

[0043] The moving unit 420 raises and lowers the upper module 410a or the lower module 410b. The moving part 420 includes a lifting cylinder 421 and a lifting rod 422 . The lifting cylinder 421 generates a driving force. The upper module 410a or the lower module 410b moves along the lift rod 422 in the vertical direction D3. The second substrate support part 430 supports the substrate W when the chamber housing 410 is opened. The second substrate support part 430 supports the substrate W when the substrate W is being loaded or unloaded. The first substrate support part 440 supports the substrate W when the chamber housing 410 is closed. The first substrate support part 440 supports the substrate W when the substrate W is processed in the internal space of the chamber housing 410 .

[0044] The second substrate support 430 includes a vertical rod 431 , a horizontal rod 432 , and a support protrusion 433 . A vertical rod 431 extends from the upper wall of the upper module 410a in a vertical direction D3. The horizontal rod 432 extends from the end of the vertical rod 431 in the horizontal direction D1. The support protrusion 433 is formed on the horizontal rod 432 . A plurality of second substrate support portions 430 are provided. The second substrate support portion 430 supports the substrate W at a position spaced apart from the upper wall of the upper module 410a. When the chamber housing 410 is closed, the first substrate support portion 440 supports the substrate W at a higher position than the second substrate support portion 430 . The second substrate support portion 430 does not support the substrate W, and only the first substrate support portion 440 supports the substrate W. When the chamber housing 410 is closed, the first substrate support portion 440 supports the substrate W at the same position as the second substrate support portion 430 . The second substrate support portion 430 and the first substrate support portion 440 can support the substrate W at the same time. A plurality of first substrate support portions 440 are provided.

[0045] Although not shown in FIGS. 5 and 6, the third process chamber 400 may further include a leveling module. The leveling module is mounted on the upper module 410a. The horizontal adjustment module adjusts the horizontal state of the upper module 410a. The horizontal adjustment module adjusts the horizontal state of the substrate W supported by the second substrate support portion 430 . However, the present invention is not limited to this, and the level adjustment module can also be installed in the lower module 410b. The horizontal adjustment module adjusts the horizontal state of the lower module 410b. The horizontal adjustment module adjusts the horizontal state of the substrate W supported by the first substrate support portion 440 .

[0046] The supply and exhaust ports 450 include a first supply port 451 , a second supply port 452 , and an exhaust port 453 . The first supply port 451 is provided in the upper module 410a. A first supply port 451 is formed through the top wall of the upper module 410a. The first supply port 451 supplies the supercritical fluid to the process region 401 . A second supply port 452 is provided in the lower module 410b. A second supply port 452 is formed through the bottom wall of the lower module 410b. The second supply port 452 supplies the supercritical fluid to the buffer region 402 . The second supply port 452 supplies the supercritical fluid first, and the first supply port 451 supplies the supercritical fluid second. When the internal temperature and pressure of the chamber housing 410 reach the critical temperature and pressure, the first supply port 451 supplies the supercritical fluid. After the supercritical fluid supplied through the first supply port 451 is liquefied, it can be prevented from dropping onto the substrate W and damaging the substrate W.

[0047] The exhaust port 453 discharges fluids used in processing the substrate W from the interior space of the chamber housing 410 to the atmosphere. The exhaust port 453 exhausts fluids used in processing the substrate W to a reclamation system. The fluids used in processing the substrate W may include chemicals. The regeneration system chemically separates the fluid from the supercritical fluid. An exhaust port 453 is provided in the lower module 410b. An exhaust port 453 is formed through the bottom wall of the lower module 410b. The exhaust port 453 is formed adjacent to the second supply port 452 .

[0048] The blocking plate 460 is provided in the interior space of the chamber housing 410 . The blocking plate 460 can prevent the supercritical fluid provided through the second supply port 452 from being directly sprayed onto the lower surface of the substrate W. The first substrate support part 440 is disposed on the blocking plate 460 . The process region 401 and the buffer region 402 are separated based on the blocking plate 460 . A blocking plate 460 is disposed on the lower wall of the lower module 410b. The blocking plate 460 is supported by a plate support 470 . The blocking plate 460 does not contact the lower wall of the lower module 410b due to the plate support 470. The blocking plate 460 is formed in a shape corresponding to the substrate W. A plurality of plate support portions 470 are provided.

[0049] The heating unit 480 heats the interior of the chamber housing 410 . The heating unit 480 maintains the supercritical fluid supplied to the internal space of the chamber housing 410 at a temperature above the critical temperature. The heating unit 480 changes the liquefied fluid back into a supercritical fluid. A plurality of heating units 480 are provided. The heating section 480 may be provided in each of the upper module 410a and the lower module 410b. However, the present invention is not limited to this, and the heating unit 480 may be provided in either the upper module 410a or the lower module 410b. For example, the heating unit 480 is provided as a heater.

[0050] When a chemical cleaning process is performed, the pattern may collapse due to the influence of surface tension that exists between liquid films. To solve this problem, a supercritical drying process is carried out. After the cleaning process is completed, the substrate W may be wet with the cleaning liquid. For example, the cleaning liquid can be IPA. In the supercritical drying process, a supercritical fluid with low surface tension is pressurized in a sealed chamber to mix IPA between patterns on the substrate W, thereby minimizing surface tension and preventing pattern collapse, thereby drying the substrate. At the beginning of the drying process, the second supply port 452 supplies the supercritical fluid. 7, the supercritical fluid SCF passes through the buffer region 402, the first space S1 below the blocking plate 460, the second space S2 below the substrate W, and so on, and reaches the fourth space S4 above the substrate W. However, since the supercritical fluid SCF moves to the second space S2 which is suddenly wider than the first space S1, turbulence occurs near the edge of the substrate W, which causes shear stress on the pattern. The shear stress caused by the turbulence causes pattern collapse at the edge region of the substrate W.

[0051] The third process chamber 400 has a throat structure applied to the transfer path of the supercritical fluid. The third process chamber 400 has a throat structure applied to the first space S1. The throat structure narrows the width of the path through which the supercritical fluid travels and then widens it again. When the throat structure is applied to the first space S1, the supercritical fluid SCF passes through the third space S3 adjacent to the inner wall of the chamber housing 410 and reaches the fourth space S4. The throat structure applied to the first space S1 can reduce the turbulence acting on the vicinity of the edge of the substrate W, and can reduce the flow velocity near the edge of the substrate W. The throat structure applied to the first space S1 can control the generation of turbulence. The throat design can minimize or eliminate turbulence. By controlling turbulence generation by the throat structure, the third process chamber 400 can improve flow distribution and shear stress near the edge of the substrate W, which is most vulnerable to pattern collapse. The third process chamber 400 can prevent pattern collapse from occurring in the edge region of the substrate W.

[0052] FIG. 7 is an exemplary view for explaining the effect of the throat structure according to the embodiment of the present invention. The throat structure includes a single protrusion. For example, the throat structure includes a first protrusion 510 . FIG. 8 is a first exemplary view illustrating a throat structure according to an embodiment of the present invention. Referring to FIG. 8, the first protrusion 510 is formed at the lower end of the blocking plate 460 . The position of the first protrusion 510 is not limited, and it may be formed at any position below the blocking plate 460 in the first space S1. However, the first protrusion 510 formed at the lower end of the blocking plate 460 is most advantageous in controlling the generation of turbulence. The first protrusion 510 is not limited to being formed on the blocking plate 460 . The first protrusion 510 may also be formed on the lower module 410b.

[0053] FIG. 9 is a second exemplary view illustrating a throat structure according to an embodiment of the present invention. Referring to FIG. 9, the first protrusion 510 is formed at a portion adjacent to the lower end of the blocking plate 460 . The first protrusion 510 is formed at a portion facing the lower end of the blocking plate 460 . The position of the first protrusion 510 is not limited, and it may be formed at any position on the inner surface of the lower module 410b within the first space S1. However, the first protrusion 510 formed at the portion facing the lower end of the blocking plate 460 is most advantageous in controlling the generation of turbulence. The first protrusion 510 has a cross section formed in a triangular shape. However, the cross section of the first protrusion 510 is not limited thereto, and may be formed in various polygonal shapes including a quadrangular shape. Alternatively, the cross section of the first protrusion 510 can be formed in a semicircular or semielliptical shape.

[0054] The throat structure includes a plurality of protrusions. For example, the throat structure includes a first protrusion 510 and a second protrusion 520 . The first protrusion 510 and the second protrusion 520 are formed on the blocking plate 460 . The first protrusions 510 and the second protrusions 520 may be closely spaced. The first protrusions 510 and the second protrusions 520 may be densely packed at any position below the blocking plate 460 within the first space S1.

[0055] FIG. 10 is a third exemplary view illustrating a throat structure according to an embodiment of the present invention. For example, referring to FIG. 10, the first protrusions 510 and the second protrusions 520 are closely spaced at the lower end of the blocking plate 460 . However, the present invention is not limited to this, and the first protrusion 510 and the second protrusion 520 may be separated. The first protrusion 510 and the second protrusion 520 may be distributed at any positions below the blocking plate 460 within the first space S1.

[0056] FIG. 11 is a fourth exemplary view illustrating a throat structure according to an embodiment of the present invention. Exemplarily, referring to FIG. 11, the first protrusion 510 is formed at the lower end of the blocking plate 460 , and the second protrusion 520 is formed at the bottom of the blocking plate 460 adjacent to the buffer region 402 . When the throat structure includes a plurality of protrusions, at least one of the protrusions is preferably formed on the lower end of the blocking plate 460 . The first protrusion 510 and the second protrusion 520 are not limited to being formed on the blocking plate 460 . The first protrusion 510 and the second protrusion 520 may also be formed on the lower module 410b. The first protrusions 510 and the second protrusions 520 may be closely spaced. Alternatively, the first protrusion 510 and the second protrusion 520 may be dispersed. Within the first space S1, the first protrusions 510 and the second protrusions 520 may be densely packed or dispersed at any position on the inner surface of the lower module 410b.

[0057] FIG. 12 is a fifth exemplary view illustrating a throat structure according to an embodiment of the present invention. For example, referring to FIG. 12, the first protrusions 510 and the second protrusions 520 are densely packed in a portion facing the lower end of the blocking plate 460 . FIG. 13 is a sixth exemplary view illustrating a throat structure according to an embodiment of the present invention. For example, referring to FIG. 13, the first protrusion 510 is formed in a portion facing the lower end of the blocking plate 460, and the second protrusion 520 is formed in a portion facing the lower part of the blocking plate 460 adjacent to the buffer region 402. When the throat structure includes a plurality of protrusions, it is preferable that at least one of the protrusions is formed on a portion facing the lower end of the blocking plate 460 . The first protrusion 510 and the second protrusion 520 do not have to be concentrated on either the blocking plate 460 or the lower module 410b. The first protrusion 510 may be formed on the blocking plate 460, and the second protrusion 520 may be formed on the lower module 410b. The first protrusion 510 may be formed at any position on the lower part of the blocking plate 460 within the first space S1, and the second protrusion 520 may be formed at any position on the inner surface of the lower module 410b within the first space S1. The first protrusion 510 and the second protrusion 520 may be formed at positions corresponding to the up-down direction D3.

[0058] FIG. 14 is a seventh exemplary view illustrating a throat structure according to an embodiment of the present invention. Exemplarily, referring to FIG. 14, the first protrusion 510 is formed at the lower end of the blocking plate 460, and the second protrusion 520 is formed at a portion of the blocking plate 460 opposite to the lower end. The first protrusion 510 and the second protrusion 520 may be formed at positions that do not correspond to the up-down direction D3.

[0059] FIG. 15 is an eighth exemplary view illustrating a throat structure according to an embodiment of the present invention. For example, referring to FIG. 15, the first protrusion 510 is formed at the lower end of the blocking plate 460, and the second protrusion 520 is formed at a portion facing the lower portion of the blocking plate 460 adjacent to the buffer region 402. Alternatively, although not shown in the figure, the first protrusion 510 may be formed on the lower part of the blocking plate 460 adjacent to the buffer region 402, and the second protrusion 520 may be formed on the part opposite the lower end of the blocking plate 460. When the throat structure includes a plurality of protrusions, at least one of the protrusions is preferably formed on the lower end of the blocking plate 460 or on a portion of the blocking plate 460 facing the lower end.

[0060] The first protrusion 510 and the second protrusion 520 are formed so that their cross sections have the same shape. However, the present invention is not limited to this, and the first protrusion 510 and the second protrusion 520 may be formed to have different cross-sectional shapes. The cross section of the first protrusion 510 and the cross section of the second protrusion 520 may be selected from the group consisting of a polygonal shape, a semicircular shape, and a semi-elliptical shape, but are not necessarily limited thereto. The third process chamber 400 can control the generation of turbulence by using a throat structure, but the present invention is not limited to this. The third process chamber 400 may also control turbulence generation using at least one component selected from the blocking plate 460, the first substrate support 440, and the plate support 470. This will be explained below.

[0061] FIG. 16 is a first exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 16, the blocking plate 460 includes a plate body 530 and a length extension 540 . Length extension 540 is coupled to the outside of plate body 530 . The plate body 530 has a circular plane, and the length extension 540 has an annular ring-shaped plane. However, the shapes of the plate body 530 and the length extension portion 540 are not limited thereto. The length of the plate body 530 is not changed, but the length of the length extension portion 540 can be changed in the outward direction (D1 and D2) from the outside of the plate body 530. The length of the length extension 540 is changed depending on the process conditions. For example, the length extension 540 can vary in length depending on process temperature, process pressure, and the like. Alternatively, the length of the length extension portion 540 can be changed depending on the type of process. The length extension 540 changes its length before the drying process begins.

[0062] The length extension 540 is formed from the same material as the plate body 530 . For example, the plate body 530 and the length extension 540 are formed from the same metal or alloy. However, the present invention is not limited to this, and the length extension portion 540 may be formed of a material different from that of the plate body 530 . For example, the plate body 530 and the length extension 540 may be formed from different metals or alloys. Alternatively, the plate body 530 may be formed of a metal and the length extension 540 may be formed of a polymer that replaces the metal. When the length extension 540 is made of metal, it may be made of SUS (Stainless Use Steel) or STS (Steel Type Stainless Steel). If the length extension 540 is made of a polymer, it may be made of PEEK (Polyetheretherketone).

[0063] The thickness T1 of the extension 540 is thinner than the thickness T2 of the plate body 530 (T1 <T2)。 However, the present embodiment is not limited to this. FIG. 17 is a second exemplary view illustrating the structure of the blocking plate according to an embodiment of the present invention. Referring to FIG. 17, the thickness T1 of the length extension portion 540 may be formed to be equal to the thickness T2 of the plate body 530 (T1=T2).

[0064] Referring again to FIG. 16, the end of the length extension 540 is located inwardly from the end of the substrate W. That is, the blocking plate 460 consisting of the plate body 530 and the length extension 540 is formed to have a width smaller than that of the substrate W. However, the present embodiment is not limited to this. FIG. 18 is a third exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 18, the end of the length extension 540 is aligned with the end of the substrate W in the third direction D3. That is, the blocking plate 460 consisting of the plate body 530 and the length extension 540 is formed to have the same width as the substrate W. The end of the length extension 540 cannot be positioned outwardly of the edge of the substrate W. That is, the blocking plate 460 consisting of the plate body 530 and the length extension 540 is formed to have a width greater than that of the substrate W. That is, when the length extension 540 is formed in this manner, turbulence generation is enhanced, thereby increasing the shear stress experienced by the edge region of the substrate W. In this embodiment, the end of the length extension 540 is aligned with the edge of the substrate W or positioned inwardly of the edge of the substrate W. The end of the length extension 540 is preferably located inward from the end of the substrate W.

[0065] Referring again to FIG. 16, length extension 540 is formed with a constant thickness. The length extension 540 may not include a beveled surface on its bottom. However, the present invention is not limited thereto, and the thickness of the length extension 540 may be gradually reduced in a direction toward the inner wall of the chamber housing 410 . The length extension 540 includes a sloped surface on its lower portion. The inclined surface of the length extension 540 is formed by a single straight line. FIG. 19 is a fourth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 19, the length extension 540 includes a first inclined surface 550a formed by a first straight line.

[0066] However, the present invention is not limited to this, and the inclined surface of the length extension portion 540 may be formed by a plurality of straight lines. For example, the inclined surface of the length extension portion 540 includes a first inclined surface 550a formed by a first straight line and a second inclined surface 550b formed by a second straight line. FIG. 20 is a fifth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 20, the inclination angle θ1 of the first inclined surface 550a is greater than the inclination angle θ2 of the second inclined surface 550b (θ1>θ2). Although not shown in the figure, the inclination angle θ1 of the first inclined surface 550a can also be smaller than the inclination angle θ2 of the second inclined surface 550b (θ1<θ2).

[0067] The inclined surface of the length extension 540 is not limited to being formed in a straight line, but may also be formed in a curved line. The sloped surface of the length extension 540 is formed by a single curve. FIG. 21 is a sixth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 21, the length extension 540 includes a third angled surface 550c formed by a first curve. The third inclined surface 550c is formed in a concave shape. Although not shown in the figure, the third inclined surface 550c can also be formed in a convex shape.

[0068] However, the present invention is not limited to this, and the inclined surface of the length extension portion 540 may be formed with a plurality of curves. For example, the inclined surfaces of the length extension portion 540 include a third inclined surface 550c formed by a first curve and a fourth inclined surface 550d formed by a second curve. The third inclined surface 550c and the fourth inclined surface 550d may be formed in the same shape. FIG. 22 is a seventh exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 22, the third inclined surface 550c and the fourth inclined surface 550d are formed in a concave shape. Although not shown in the figure, the third inclined surface 550c and the fourth inclined surface 550d can also be formed in a convex shape.

[0069] Alternatively, the third inclined surface 550c and the fourth inclined surface 550d may be formed in different shapes. FIG. 23 is an eighth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 23, the third inclined surface 550c is formed in a convex shape, and the fourth inclined surface 550d is formed in a concave shape. Although not shown in the figure, it is also possible to form the third inclined surface 550c in a concave shape and the fourth inclined surface 550d in a convex shape.

[0070] The inclined surface of the length extension 540 is not limited to being formed as either a straight line or a curved line, but may be formed as both a straight line and a curved line. FIG. 24 is a ninth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 24, the inclined surface of the length extension portion 540 includes a first inclined surface 550a formed by a first straight line and a fourth inclined surface 550d formed by a second curved line. The fourth inclined surface 550d is formed in a concave shape. Although not shown in the figure, the fourth inclined surface 550d can also be formed in a convex shape.

[0071] FIG. 25 is a tenth exemplary view illustrating the structure of the blocking plate according to an embodiment of the present invention. Referring to FIG. 25, the inclined surface of the length extension portion 540 includes a third inclined surface 550c formed by a first curve and a second inclined surface 550b formed by a second straight line. The third inclined surface 550c is formed in a concave shape. Although not shown in the figure, the third inclined surface 550c can also be formed in a convex shape.

[0072] FIG. 26 is an eleventh exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 26, the inclined surface of the length extension 540 may be formed in a stepped manner.

[0073] As mentioned above, the throat structure has been described with reference to FIGS. If the length extension 540 does not include a beveled surface, the throat structure is applied to the length extension 540. When the length extension 540 includes a beveled surface, a throat structure is applied to the plate body 530 . The blocking plate 460 is not limited to being formed in a single layer, but may be formed in multiple layers.

[0074] FIG. 27 is a twelfth exemplary view illustrating the structure of a blocking plate according to some embodiments of the present invention. For example, referring to FIG. 27, the blocking plate 460 includes a filler body 560, a filler volume increasing plate 570, and a filler cap 580. The filler body 560, the filler volume increasing plate 570, and the filler cap 580 are made of metal. For example, the filler body 560, the filler volume increasing plate 570, and the filler cap 580 are made of SUS or STS. A filler volume increasing plate 570 is stacked on the filler body 560 , and a filler cap 580 is stacked on the filler volume increasing plate 570 . The filler cap 580 is provided as a cap that covers the top of the filler body 560 . The filler volume increasing plate 570 is disposed below the filler cap 580 and is provided as a plate that substantially contributes to increasing the volume of the blocking plate 460 .

[0075] The filler volume increasing plate 570 and the filler cap 580 are formed from the same material as the filler body 560 . For example, filler body 560, filler volume increase plate 570, and filler cap 580 are formed of the same metal or alloy. However, the filler volume increasing plate 570 and the filler cap 580 may be made of a material different from that of the filler body 560 . For example, the filler volume increase plate 570 and the filler cap 580 can be formed of a different metal or alloy than the filler body 560 . Alternatively, the filler body 560 may be made of metal, and the filler volume increasing plate 570 and the filler cap 580 may be made of a polymer that replaces the metal. When the filler volume increasing plate 570 and the filler cap 580 are made of metal, they may be made of SUS or STS. If the filler volume increase plate 570 and the filler cap 580 are made of a polymer, they may be made of PEEK. The filler volume increasing plate 570 and the filler cap 580 are made of the same material, but they can also be made of different materials.

[0076] The filler body 560 is fixed on the plate support 470, but the filler volume increasing plate 570 and the filler cap 580 can move in the horizontal direction (D1 and D2). FIG. 28 is a thirteenth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 28, the filler volume increasing plate 570 and the filler cap 580 move on the filler body 560 in a direction where the inner wall of the chamber housing 410 is located. The moving distance of the filler volume increasing plate 570 and the filler cap 580 may vary depending on process conditions. For example, the moving distance of the filler volume increasing plate 570 and the filler cap 580 may vary depending on the process temperature, process pressure, and the like. Alternatively, the moving distance of the filler volume increasing plate 570 and the filler cap 580 may vary depending on the type of process. The filler volume increase plate 570 and filler cap 580 may be removed before the drying process begins.

[0077] The filler volume increase plate 570 and the filler cap 580 can move independently. The travel distance of the filler cap 580 may be the same as the travel distance of the filler volume increasing plate 570 .

[0078] However, the present invention is not limited thereto, and the moving distance of the filler cap 580 may be different from the moving distance of the filler volume increasing plate 570 . FIG. 29 is a fourteenth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 29, the moving distance DIS1 of the filler cap 580 is longer than the moving distance DIS2 of the filler volume increasing plate 570 (DIS1>DIS2).

[0079] The filler volume increasing plate 570 and the filler cap 580 can be divided into multiple pieces. The filler volume increase plate 570 and the filler cap 580 may be equally divided. The filler volume increasing plate 570 and the filler cap 580 can be divided into an even number of pieces. FIG. 30 is a fifteenth exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. For example, referring to FIG. 30, the filler volume increasing plate 570 and the filler cap 580 are each divided into four pieces. FIG. 31 is a 16th exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. For example, referring to FIG. 31, the filler volume increasing plate 570 and the filler cap 580 are each divided into six pieces. However, the present invention is not limited to this, and the filler volume increasing plate 570 and the filler cap 580 may be divided into an odd number of pieces. The filler volume increasing plates 570 and the filler caps 580 can be divided into the same number of pieces or into different numbers.

[0080] When the filler volume increasing plate 570 and the filler cap 580 are divided into a plurality of pieces, the plurality of filler volume increasing plates and the plurality of filler caps move in different directions. FIG. 32 is a seventeenth exemplary view illustrating the structure of the blocking plate according to an embodiment of the present invention. Referring to FIG. 32, when the filler volume increasing plate 570 and the filler cap 580 are each divided into four pieces, the four filler caps (581, 582, 583, 584) move to the right, downward, left, and upward directions in FIG. 32, respectively, and the four filler volume increasing plates (571, 572, 573, 574) move diagonally upward and to the right, downward and to the left, respectively, in FIG. 32.

[0081] FIG. 33 is an 18th exemplary view illustrating the structure of a blocking plate according to an embodiment of the present invention. Referring to FIG. 33, when the filler volume increasing plate 570 and the filler cap 580 are each divided into six pieces, the six filler caps (581, 582, 583, 584, 585, 586) move approximately in the 1 o'clock, 3 o'clock, 5 o'clock, 7 o'clock, 9 o'clock, and 11 o'clock directions in FIG. 33, respectively, and the six filler volume increasing plates (571, 572, 573, 574, 575, 576) move approximately in the 12 o'clock, 2 o'clock, 4 o'clock, 6 o'clock, 8 o'clock, and 10 o'clock directions in FIG. 33, respectively. However, the present invention is not limited to this, and the plurality of filler volume increasing plates and the plurality of filler caps may move in the same direction.

[0082] As described above, the throat structure was described with reference to FIGS. 8 to 15, and then the case where the blocking plate 460 is formed in a single layer was described with reference to FIGS. When the blocking plate 460 is formed in a single layer, it includes a plate body 530 and a length extension 540 . The case where the length extension portion 540 does not include an inclined surface has been described with reference to FIGS. 16 to 18, and the case where the length extension portion 540 includes an inclined surface has been described with reference to FIGS. When the blocking plate 460 is formed in multiple layers, it includes a filler body 560, a filler volume increasing plate 570, and a filler cap 580. In this case, the filler volume increasing plate 570 and the filler cap 580 are movable in the horizontal direction (D1 and D2). Filler volume increase plate 570 and filler cap 580 correspond to length extension 540 .

[0083] When the moving distance of the filler cap 580 is the same as the moving distance of the filler volume increasing plate 570, the throat structure is applied to the filler volume increasing plate 570. If the travel distance of the filler cap 580 is longer than the travel distance of the filler volume increasing plate 570, the throat structure is applied to the filler cap 580. When the moving distance of the filler cap 580 is the same as the moving distance of the filler volume increasing plate 570 , the inclined surface of the length extension 540 is applied only to the filler volume increasing plate 570 . When the travel distance of the filler cap 580 is longer than the travel distance of the filler volume increasing plate 570 , the inclined surface of the length extension 540 is applied to both the filler volume increasing plate 570 and the filler cap 580 . Alternatively, the beveled surface of the length extension 540 is applied only to the filler cap 580 . When the inclined surface of the length extension 540 is applied to both the filler volume increasing plate 570 and the filler cap 580 , the throat structure is applied to the filler body 560 . Even if the inclined surface of the length extension 540 is applied only to the filler volume increasing plate 570, the throat structure is applied to the filler body 560. It should be noted that when the inclined surface of the length extension portion 540 is applied only to the filler cap 580 , the throat structure is applied to the filler volume increasing plate 570 .

[0084] The structure of the blocking plate 460 that can control the generation of turbulence has been described above. The blocking plate 460 prevents the supercritical fluid from directly affecting the bottom of the substrate W when the supercritical fluid is supplied from below at the beginning of the process, and gradually increases the internal temperature and pressure of the chamber housing 410 through the circulation of the supercritical fluid, thereby minimizing direct and sudden effects on the substrate W. However, certain block plate 460 configurations and process chamber configurations may create turbulence, which may induce pattern collapse near the edge of the substrate W. In the present invention, the blocking plate 460 having the throat structure can provide a structural modification that can minimize turbulence when the supercritical fluid reaches the top of the substrate W. Furthermore, the blocking plate 460 can be flexibly modified in structure according to the process conditions, the structure of the process chamber, and other variables, thereby improving process performance. In the present invention, it is also possible to apply a throat structure to the chamber housing 410.

[0085] Next, the structure of the first substrate support part 440 that can control the generation of turbulence will be described. The first substrate support part 440 may be made of a polymer instead of a metal. For example, the first substrate support portion 440 is made of PEEK. The first substrate support part 440 is formed on the blocking plate 460 . The first substrate support portion 440 is formed on the filler cap 580 . The first substrate support 440 supports the substrate W on the filler cap 580 . When the filler cap 580 is divided into a plurality of parts, the first substrate support parts 440 are provided in the same number as the filler caps 580 for balancing the substrates W. The first substrate support portions 440 are provided in even numbers. Preferably, when the number of filler caps 580 is n, the number of first substrate support portions 440 is n / m. Here, m is an even natural number.

[0086] FIG. 34 is an exemplary view illustrating a second substrate support part according to an embodiment of the present invention. Referring to FIG. 34, the first substrate support part 440 can be raised and lowered. The first substrate support part 440 can be raised and lowered to different heights depending on process conditions. Alternatively, the first substrate support part 440 may be raised and lowered to different heights depending on the type of process. The first substrate support 440 can be raised and lowered to a set height before starting the drying process. The raising and lowering of the first substrate support part 440 can control the generation of turbulence.

[0087] Even when the first substrate support part 440 is raised to the maximum height, a certain distance is maintained between the inner wall of the upper module 410a and the substrate W. The distance between the inner wall of the upper module 410a and the substrate W may be less than P1. For example, P1 is selected from the range of 6 mm to 10 mm. P1 may be 6.9 mm. If the distance between the inner wall of the upper module 410a and the substrate W is equal to or greater than P1, the CO2 supercritical flow collides with the wall surface of the upper module 410a, causing turbulence. If turbulence occurs frequently on the wall surface of the upper module 410a in this way, clumps of IPA are generated in the pressurizing section, and the bonding of particles and the like increases. Furthermore, if the turbulence becomes so great that it affects the substrate W, pattern collapse occurs.

[0088] The distance between the inner wall of the upper module 410a and the substrate W may be equal to or greater than P2. For example, P2 is selected from the range of 1 mm to 5 mm. P2 may be 4.9 mm. When the distance between the inner wall of the upper module 410a and the substrate W is equal to or greater than P2, the CO2 supercritical flow moves along the inner walls of the lower module 410b and the upper module 410a to the upper side of the substrate W, and no turbulence occurs.

[0089] The height of the first substrate support portion 440 may be less than P3. For example, P3 is selected from the range of 11 mm to 15 mm. P3 may be 13.15 mm. If the height of the first substrate support portion 440 is equal to or greater than P3, significant turbulence will occur below the substrate W, making the support of the substrate W unstable. In this case, vibration occurs in the substrate W during the supercritical drying process, causing uneven distribution of the IPA in a wetting state, resulting in pattern collapse in areas where the IPA is insufficient.

[0090] Next, the structure of the plate support part 470 that can control the generation of turbulence will be described. The plate support 470 may be formed of metal. For example, the plate support 470 is made of SUS or STS. A plate support 470 is formed on the interior surface of the lower module 410b. The plate support 470 supports the blocking plate 460 on the interior surface of the lower module 410b.

[0091] FIG. 35 is an exemplary view illustrating a plate support according to an embodiment of the present invention. Referring to FIG. 35, the plate support 470 can be raised and lowered. The plate support 470 can be raised and lowered to different heights depending on process conditions. Alternatively, the plate support 470 may be raised or lowered to different heights depending on the type of process. The plate support 470 can be raised or lowered to create a set height before the drying process begins. Raising and lowering the plate support 470 can control turbulence generation.

[0092] The combined height of the first substrate support portion 440, the blocking plate 460, and the plate support portion 470 may be less than P4. For example, P4 is selected from the range of 16 mm to 20 mm. P4 can be 18.15 mm. If the combined height is equal to or greater than P4, significant turbulence occurs below the substrate W, making the support of the substrate W unstable. In this case, vibration occurs in the substrate W during the supercritical drying process, causing uneven distribution of the IPA in a wetting state, resulting in pattern collapse in areas where the IPA is insufficient.

[0093] The extension and contraction of the length extension portion 540 in the front-rear and left-right directions (D1 and D2) within the blocking plate 460, and the lifting and lowering of the first substrate support portion 440 and the plate support portion 470 in the up-down direction D3 have been described above. The extension and contraction of length extension 540 provides a first change in the migration path of the supercritical fluid. The first modification increases the volume of the blocking plate 460 . The first modification adjusts the amount of supercritical fluid used in the process chamber in response to the volume change of the blocking plate 460 . The first modification adjusts the length of the flow path through which the supercritical fluid supplied from the bottom passes.

[0094] The raising and lowering of the first substrate support 440 provides a second change in the path of travel of the supercritical fluid. The raising and lowering of the plate support 470 provides a third change in the path of travel of the supercritical fluid. The second and third modifications adjust the distance that the supercritical fluid supplied from above travels to reach the substrate W. The second and third modifications adjust the distance between the inner wall of the upper module 410a and the substrate W. The second and third modifications adjust the width of the flow path through which the supercritical fluid supplied from below passes under the substrate W. The second and third variations can adjust the magnitude and direction of the turbulence.

[0095] As mentioned above, the throat structure was described with reference to Figures 8 to 15, the structure of the blocking plate 460 was described with reference to Figures 16 to 33, the structure of the first substrate support part 440 was described with reference to Figure 34, and the structure of the plate support part 470 was described with reference to Figure 35. The throat structure, the blocking plate 460, the first substrate support part 440, and the plate support part 470 can each control the generation of turbulence. In this embodiment, the third process chamber 400 may include at least one selected from a throat structure capable of controlling turbulence generation, a blocking plate 460, a first substrate support part 440, and a plate support part 470.

[0096] Next, the supercritical drying process in the third process chamber 400 will be described. FIG. 36 is a flowchart illustrating an example of a supercritical drying process according to an embodiment of the present invention. If the substrate W contains a pattern that requires supercritical drying, the substrate is loaded into the semiconductor manufacturing equipment 100 (step S610) and then moved to the first process chamber 200, which is a wet chamber, where a wet process is performed using chemicals suitable for the process purpose (step S620).

[0097] In order to prevent the pattern from collapsing and protect the pattern, IPA is applied onto the substrate in the final step of the wet process (IPA Wetting) (step S630). Thereafter, the substrate is moved to the third process chamber 400 in a state where the IPA is applied without drying (step S640). In the third process chamber 400, the supercritical CO2 is initially supplied and pressurized through the second supply port 452 (step S650). In this case, the improved filler proposed in the present invention, that is, the blocking plate 460, provides changes in the width of the flow path below the filler, the width of the flow path below the substrate, the width of the flow path above the substrate, the volume and width of the filler, etc. Therefore, the flow and flow rate of the initially supplied supercritical CO2 can be adjusted to minimize turbulence affecting the upper part of the substrate.

[0098] When the supercritical CO2 is pressurized above a certain value, the supercritical CO2 is then supplied via the first supply port 451. At this time, the IPA applied on the substrate is replaced with supercritical CO2 by repeatedly applying pressure through the first supply port 451 and depressurizing through the exhaust port 453 (step S660). In this process, the structural changes of the improved filler proposed in the present invention are used to adjust the distance between the first supply port 451 and the substrate, the flow pattern during the supply and exhaust of supercritical CO2, etc., thereby ensuring process margins. When the pressure inside the chamber housing 410 is reduced by exhausting all of the supercritical CO2 through the exhaust port 453 (step S670), the substrate is unloaded (step S680) and the supercritical drying process is completed.

[0099] Due to the structure of the third process chamber 400, the supercritical fluid supplied from the bottom travels along the walls of the chamber and reaches the top of the substrate. In this case, turbulence generated by the supercritical fluid colliding with the side and top walls of the chamber is likely to affect the edge region of the substrate, applying shear stress to the corresponding region and potentially causing pattern collapse. The present invention provides structural modifications that can minimize turbulence by allowing for the variation of filler structure.

[0100] In the future, the bar CD of semiconductor patterns will decrease and the aspect ratio will increase, making products more difficult. Therefore, even when process conditions such as temperature, pressure, and flow rate need to be changed, it is possible to derive an optimal chamber structure by changing the filler structure according to the process conditions.

[0101] The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the technical scope of the present invention. [Explanation of symbols]

[0102] 100 Semiconductor manufacturing equipment 110 Load Port Module 120 Index Module 130 Buffer Module 140 Transfer Module 150 Part 1 160 Part 2 200, 300, 400 (1st to 3rd) process chambers 210 Support part 211 Spin Head 212 Rotation axis 213 First Drive Module 214 Support pin 215 Guide pin 220 Collection Department 221 First Collection Tank 222 Second Recovery Tank 223 Third Recovery Tank 224, 225, 226 Inlet 227, 228, 229 Collection lines 230 Lifting section 231 Bracket 232 First lifting axis 233 Second Drive Module 240 Injection part 241 Nozzle Structure 242 Nozzle Support Module 243 Second lifting axis 244 Third Drive Module 245 nozzle 310 Treatment tank 311 Bottom plate 312 Side wall 320 Processing liquid supply source 330 Processing liquid supply line 340 Treated liquid discharge line 350 Temperature control section 360 Storage Container 401 Process area 402 Buffer Space 410 Chamber Housing 410a Upper Module 410b Lower Module 420 Mobile Unit 430 Second board support part 431 Vertical Rod 432 Horizontal Rod 433 Support protrusion 440 1st board support part 450 supply and exhaust ports 451 First supply port 452 Second supply port 453 exhaust port 460 Shut-off Plate 470 Plate support 480 Heating section 510 1st protrusion 520 Second protrusion S1~S4 (1st~4th) space W substrate

Claims

1. an upper module including a first supply port for supplying a supercritical fluid to the substrate processing space; a lower module coupled to the upper module and including a second supply port for supplying the supercritical fluid to the substrate processing space; a blocking plate disposed in the substrate processing space; a plate support part coupled to the lower module and supporting the blocking plate; a first substrate support portion coupled to the blocking plate and supporting a substrate; 2. A substrate processing apparatus according to claim 1, wherein a fluid transfer path between the lower module and the blocking plate includes a throat structure that varies the size of a cross section of the fluid transfer path.

2. The substrate processing apparatus according to claim 1 , wherein the throat structure includes a first protrusion.

3. 3. The substrate processing apparatus of claim 2, wherein the first protrusion is formed on at least one of the blocking plate and the lower module.

4. The substrate processing apparatus of claim 2 , wherein the throat structure further includes a second protrusion.

5. The substrate processing apparatus of claim 4 , wherein the second protrusion is formed on at least one of the blocking plate and the lower module.

6. The substrate processing apparatus according to claim 4 , wherein the first protrusions and the second protrusions are closely spaced.

7. The substrate processing apparatus according to claim 4 , wherein the first protrusion and the second protrusion are separated from each other.

8. The blocking plate is The plate body, 2. The substrate processing apparatus of claim 1, further comprising: a length extension portion coupled to a side surface of the plate body and extending in a direction parallel to the width of the plate body.

9. The substrate processing apparatus of claim 8 , wherein the thickness of the length extension is less than or equal to the thickness of the plate body.

10. The substrate processing apparatus of claim 8 , wherein a total width of the plate body and the length extension is less than or equal to a width of the substrate.

11. The substrate processing apparatus of claim 8 , wherein the length extension portion includes an inclined surface in a direction toward the fluid transfer path.

12. 12. The substrate processing apparatus according to claim 11, wherein the inclined surface includes at least one of a flat surface and a curved surface, or is stepped.

13. The blocking plate is A filler body; a filler volume increasing plate laminated on the filler body; a filler cap laminated on the filler volume increasing plate; The substrate processing apparatus according to claim 1 , wherein the filler volume increasing plate and the filler cap move horizontally.

14. The substrate processing apparatus of claim 13 , wherein the filler volume increasing plate and the filler cap move independently.

15. 14. The substrate processing apparatus of claim 13, wherein a moving distance of the filler cap is equal to or longer than a moving distance of the filler volume increasing plate.

16. The substrate processing apparatus of claim 13 , wherein the filler volume increasing plate and the filler cap are vertically divided.

17. 17. The substrate processing apparatus of claim 16, wherein the divided filler caps and the divided filler volume increasing plates move in directions different from each other.

18. The substrate processing apparatus of claim 1 , wherein at least one of the first substrate support portion and the plate support portion is movable up and down.

19. a cleaning process chamber for wet cleaning a substrate using a chemical; a drying process chamber for drying the substrate on which the chemical remains using a supercritical fluid; The drying process chamber comprises: an upper module including a first supply port for supplying the supercritical fluid to a substrate processing space; a lower module coupled to the upper module and including a second supply port for supplying the supercritical fluid to the substrate processing space; a blocking plate disposed in the substrate processing space; a plate support part coupled to the lower module and supporting the blocking plate; a first substrate support portion coupled to the blocking plate and supporting the substrate, 10. A semiconductor manufacturing facility according to claim 9, wherein the fluid transfer path between the lower module and the blocking plate includes a throat structure that varies the size of its cross section.

20. an upper module including a first supply port for supplying a supercritical fluid to the substrate processing space; a lower module coupled to the upper module and including a second supply port for supplying the supercritical fluid to the substrate processing space; a blocking plate disposed in the substrate processing space; a plate support part coupled to the lower module and supporting the blocking plate; a first substrate support portion coupled to the blocking plate and supporting a substrate; a fluid transfer path between the lower module and the blocking plate including a throat structure that varies the cross-sectional size of the fluid transfer path; the throat structure includes a first protrusion; the first protrusion is formed on at least one of the blocking plate and the lower module; The blocking plate is A filler body; a filler volume increasing plate laminated on the filler body; a filler cap laminated on the filler volume increasing plate; The filler volume increasing plate and the filler cap move horizontally, the filler volume increasing plate and the filler cap are vertically divided; The divided filler cap has a different movement direction from the divided filler volume increasing plate.

2. The substrate processing apparatus, wherein at least one of the first substrate support portion and the plate support portion is movable up and down.

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