Shower head

Abstract

To provide a shower head that can improve the temperature uniformity of a semiconductor substrate in various kinds of processing.SOLUTION: A shower head is applicable to a semiconductor manufacturing apparatus. The shower head comprises a plurality of outlets and a plurality of heating bodies. The plurality of outlets each allow gas to pass therethrough. The plurality of heating bodies are provided in correspondence to the plurality of outlets. The plurality of heating bodies include at least a first heating body and a second heating body which are electrically independent of each other. The plurality of heating bodies can heat the gas passing through the corresponding outlets.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a showerhead. [Background technology]

[0002] BACKGROUND ART Conventionally, it is known to manufacture semiconductor devices by subjecting a semiconductor substrate to any appropriate processing (for example, a film formation process or an etching process). A semiconductor manufacturing apparatus capable of manufacturing such semiconductor devices typically includes a shower head that supplies gases appropriate for various processes to a semiconductor substrate. As such a shower head, for example, a gas shower unit for use in semiconductor manufacturing equipment has been proposed, which includes a ceramic sintered body base having a plurality of through holes and a conductive layer formed on the ceramic sintered body base (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-274103 Summary of the Invention [Problem to be solved by the invention]

[0004] In recent years, there has been an increasing demand for miniaturization of semiconductor devices. To achieve this, it is necessary to strictly control the temperature of the semiconductor substrate uniformly during various processes and to process the entire semiconductor substrate with high precision. However, in a semiconductor manufacturing apparatus equipped with the gas shower unit described in Patent Document 1, the temperature uniformity of the semiconductor substrate during various processes may be insufficient, making it difficult to process the entire semiconductor substrate with precision. A primary object of the present invention is to provide a showerhead that can improve the temperature uniformity of a semiconductor substrate during various processes. [Means for solving the problem]

[0005] [1] A showerhead according to an embodiment of the present invention is applicable to semiconductor manufacturing equipment. The showerhead includes a plurality of outlets and a plurality of heating elements. Each of the outlets allows gas to pass through. The heating elements are provided corresponding to the outlets. The heating elements include at least a first heating element and a second heating element that are electrically independent from each other. Each of the heating elements is capable of heating gas passing through a corresponding outlet. [2] The showerhead according to [1] above may include a plurality of nozzles, each of which includes the outlet and the heating element. [3] The showerhead according to [2] above may further include a support substrate, which collectively supports the plurality of nozzles. [Effects of the Invention]

[0006] According to the embodiment of the present invention, it is possible to improve the temperature uniformity of a semiconductor substrate during various processes. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic cross-sectional view of a semiconductor manufacturing apparatus including a showerhead according to one embodiment of the present invention. [Figure 2] FIG. 2 is a schematic plan view of the showerhead of FIG. [Figure 3] FIG. 3 is a schematic cross-sectional view of a nozzle included in the showerhead of FIG. [Figure 4] FIG. 4 is a cross-sectional view of the nozzle of FIG. 3 taken along line IV-IV'. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present invention will be described, but the present invention is not limited to these embodiments. In addition, in order to clarify the explanation, the width, thickness, shape, etc. of each part may be shown schematically in the drawings compared to the embodiments, but this is merely an example and does not limit the interpretation of the present invention.

[0009] A. Shower head overview FIG. 1 is a schematic cross-sectional view of a semiconductor manufacturing apparatus including a showerhead according to one embodiment of the present invention; FIG. 2 is a schematic plan view of the showerhead of FIG. As shown in FIG. 1, the showerhead 100 is applicable to a semiconductor manufacturing apparatus 101 for manufacturing semiconductor devices. The showerhead 100 includes a plurality of outlets 1a and a plurality of heating elements 11. Gas can pass through each of the plurality of outlets 1a. That is, the outlets 1a are capable of discharging gas. The plurality of heating elements 11 are provided corresponding to the plurality of outlets 1a. The plurality of heating elements 11 include first to n-th heating elements that are electrically independent from one another. n is 2 or greater, preferably 4 or greater, and more preferably 30 or greater. Each of the plurality of heating elements 11 is capable of heating gas passing through the corresponding outlet 1a. According to this configuration, the multiple heating elements include at least a first heating element and a second heating element, and because the first heating element and the second heating element are electrically independent of each other, the temperatures of the first heating element and the second heating element can be controlled separately. Therefore, the temperature of the gas passing through the outlet corresponding to each of the first heating element and the second heating element can be individually and appropriately adjusted. As a result, the temperature of the gas passing through the outlet can be arbitrarily and locally controlled so that the temperature of the semiconductor substrate is uniform throughout in various processes. This improves the temperature uniformity of the semiconductor substrate during various processes, enabling the entire semiconductor substrate to be processed with precision.

[0010] In one embodiment, the showerhead 100 includes a head body 9 having a plurality of outlets 1a. There are no particular limitations on the configuration of the head main body 9 as long as it has a plurality of ejection ports 1a. The head main body 9 is typically made of a ceramic material. The volume resistivity of ceramic materials at 500°C is, for example, 1.0×10 9 Ω·cm or more, preferably 5.0×10 9 Ω·cm or more, preferably 7.5×10 9 On the other hand, the upper limit of the volume resistivity of ceramic materials at 500°C is typically 1.0×10 10 The volume resistivity at 500°C is measured in accordance with JIS C2141-1992, for example.

[0011] Examples of ceramic materials include aluminum nitride (AlN), alumina (Al2O3), and mullite (Al6O 13 Si2), spinel (MgAl2O4), zirconia (ZrO2). The ceramic materials may be used alone or in combination. The ceramic material may contain any suitable stabilizer, such as yttrium oxide (YO) or calcium oxide (CaO). The stabilizers may be used alone or in combination.

[0012] The number of ejection ports 1a provided in the head main body 9 is set arbitrarily and appropriately. The number of ejection ports 1a is, for example, 2 or more, preferably 4 or more, and more preferably 30 or more. The discharge port 1a has any appropriate shape, and typically has a circular shape when viewed from the gas discharge direction.

[0013] The multiple ejection ports 1a are arranged arbitrarily and appropriately in the head body 9. The multiple ejection ports 1a are typically arranged at intervals from one another. As shown in Fig. 2, in one embodiment, the multiple ejection ports 1a are arranged at equal intervals from one another.

[0014] 1, the head main body 9 is provided with a plurality of heating elements 11. Each of the plurality of heating elements 11 is capable of generating heat when a voltage is applied thereto. Heat generating element 11 is typically made of a conductive material. The volume resistivity of the conductive material is smaller than that of the ceramic material. The volume resistivity of the conductive material at 500°C is, for example, 1.9 × 10 -5 Ω·cm or less, preferably 1.8×10 -5 On the other hand, the lower limit of the volume resistivity of conductive materials at 500°C is typically 1.6×10 -5 Ω·cm.

[0015] Examples of conductive materials include metal carbide compounds such as tungsten carbide (WC), metal nitride compounds such as titanium nitride (TiN), and transition metals such as molybdenum (Mo), tantalum (Ta), tungsten (W), gold (Au), platinum (Pt), rhenium (Re), and hafnium (Hf). The conductive materials may be used alone or in combination.

[0016] In one embodiment, all of the multiple heating elements 11 are electrically independent from one another. With this configuration, the temperature of the gas passing through the multiple outlets can be more precisely controlled, and the temperature uniformity of the semiconductor substrate during various processes can be further improved.

[0017] One heating element 11 may be provided for one discharge port 1a, or multiple heating elements 11 may be provided for one discharge port 1a. In the illustrated example, one heating element 11 is provided for one discharge port 1a. In other words, the shower head 100 in the illustrated example has the same number of heating elements 11 as the number of discharge ports 1a.

[0018] B. Shower head details Each component of the showerhead will be described in detail below. In one embodiment, the showerhead 100 includes a plurality of nozzles 1 and a support substrate 2 .

[0019] B-1.Nozzle Each of the plurality of nozzles 1 has a discharge port 1a and a heating element 11, and has any appropriate configuration. 3, in one embodiment, the nozzle 1 has an outer cylinder portion 12 and an inner cylinder portion 13. In this embodiment, the outer cylinder portion 12, the inner cylinder portion 13, and the support substrate 2 constitute the head main body 9 described above.

[0020] In one embodiment, the outer cylinder portion 12 has a body 121 and a flange 122 . The main body 121 typically has a cylindrical shape extending in a predetermined direction. The main body 121 has a first end and a second end in the direction in which the axis extends (hereinafter referred to as the axial direction). In the illustrated example, the first end of the main body 121 has a tapered shape that becomes smaller in diameter as it moves away from the second end. A flange 122 is connected to the second end of the main body 121.

[0021] In one embodiment, the internal space of the main body 121 includes a large diameter portion 12a and a small diameter portion 12b. The large diameter portion 12a has a larger diameter than the small diameter portion 12b. In the illustrated example, the large diameter portion 12a extends from the second end of the main body 121 to the middle of the main body 121 (the portion between the second end and the first end). The small diameter portion 12b communicates with the large diameter portion 12a and extends from the middle of the main body 121 (the portion between the second end and the first end) to the first end of the main body 121.

[0022] As described above, the flange 122 is connected to the second end of the main body 121. The flange 122 typically has an outer shape that is larger than the outer shape of the main body 121 when viewed in the axial direction of the main body 121. In one embodiment, the flange 122 has a disk shape with an outer diameter that is larger than the outer diameter of the main body 121. The center of the flange 122 may coincide with the axis of the main body 121. In the illustrated example, an opening that communicates with the large diameter portion 12a of the main body 121 is provided in the central portion of the flange 122.

[0023] Such an outer cylinder portion 12 is typically made of the above-mentioned ceramic material. The main body 121 and the flange 122 may be made of the same ceramic material, or may be made of different ceramic materials.

[0024] 4, the inner cylindrical portion 13 is configured to be inserted into the internal space of the outer cylindrical portion 12. In the illustrated example, the inner cylindrical portion 13 can be inserted into the large diameter portion 12a of the main body 121 of the outer cylindrical portion 12. The inner cylindrical portion 13 typically has a cylindrical shape extending in a predetermined direction.

[0025] 3, when the inner cylindrical portion 13 is inserted into the internal space of the outer cylindrical portion 12, the internal space of the inner cylindrical portion 13 and the small diameter portion 12b of the outer cylindrical portion 12 are in axial communication with each other. As a result, the internal space of the inner cylindrical portion 13 and the small diameter portion 12b of the outer cylindrical portion 12 form the discharge port 1a. Furthermore, when the inner cylindrical portion 13 is inserted into the internal space of the outer cylindrical portion 12, a gap may be provided between the outer peripheral surface of the inner cylindrical portion 13 and the inner peripheral surface of the large diameter portion 12a of the outer cylindrical portion 12. The arrangement, shape, and size of the gap are not particularly limited.

[0026] Such inner cylindrical portion 13 is typically made of the above-mentioned ceramic material. The inner cylindrical portion 13 and the outer cylindrical portion 12 may be made of the same ceramic material or different ceramic materials.

[0027] In one embodiment, the above-described heating element 11 is provided on the outer peripheral surface of the inner cylindrical portion 13. That is, in this embodiment, the heating element 11 is located between the outer cylindrical portion 12 and the inner cylindrical portion 13.

[0028] The shape and arrangement of the heating element 11 are not particularly limited. In the illustrated example, the heating element 11 has a thin film shape. The thickness of the heating element 11 having a thin film shape is, for example, 0.1 μm to 50 μm, and preferably 1.0 μm to 20 μm. The heating element 11 having a thin film shape is formed by any appropriate film formation means (for example, sputtering, vapor deposition, or printing). The area of ​​the outer peripheral surface of the inner cylindrical portion 13 on which the heating element 11 is disposed is, for example, 10% to 90% when the entire outer peripheral surface of the inner cylindrical portion 13 is taken as 100%.

[0029] Furthermore, wiring (not shown) is connected to the heating element 11. The wiring is routed arbitrarily and appropriately in the head body 9. The heating element 11 is configured so that a voltage is applied from the outside via the wiring (not shown).

[0030] An example of such a nozzle 1 is the electrode-embedded ceramic structure described in International Publication No. 2021 / 070763, the entire disclosure of which is incorporated herein by reference.

[0031] B-2.Support board As shown in FIG. 1, in one embodiment, a support substrate 2 supports a plurality of nozzles 1 collectively. The support substrate 2 may have any appropriate shape depending on the application of the showerhead 100. A representative shape of the support substrate 2 is a plate shape. The support substrate 2 preferably has a disk shape (see FIG. 2). The thickness of the support substrate 2 is, for example, 5 mm to 20 mm.

[0032] The support substrate 2 typically has a plurality of through holes 2a corresponding to the plurality of nozzles 1. The size of the through holes 2a is, for example, equal to or greater than the outer diameter of the main body 121 of the outer cylinder portion 12 and smaller than the outer diameter of the flange 122. In the illustrated example, the main body 121 of the outer cylinder portion 12 is inserted into the through holes 2a, and the flange 122 of the outer cylinder portion 12 is fixed to the peripheral portion of the through holes 2a in the support substrate 2.

[0033] C. Semiconductor manufacturing equipment Such a showerhead 100 is suitably applied to a semiconductor manufacturing apparatus 101. The semiconductor manufacturing apparatus 101 is typically capable of performing any appropriate process on a semiconductor substrate 7. Examples of processes that can be performed on the semiconductor substrate 7 include film formation processes such as chemical vapor deposition (CVD) and atomic layer deposition (ALD); etching processes; and ashing processes.

[0034] In one embodiment, semiconductor manufacturing apparatus 101 includes chamber 3, showerhead 100 described above, ring 4, electrostatic chuck 6, and focus ring 5.

[0035] Semiconductor manufacturing apparatus 101 is capable of performing various processes on semiconductor substrate 7 in the internal space of chamber 3. Chamber 3 typically houses shower head 100, ring 4, electrostatic chuck 6, and focus ring 5.

[0036] In one embodiment, the chamber 3 comprises an upper wall 31 , a lower wall 32 and a side wall 33 . The upper wall 31 typically has a plate shape having a thickness in the vertical direction. In the illustrated example, the upper wall 31 has a gas supply port 31a. Gases corresponding to various processes for the semiconductor substrate 7 are supplied to the gas supply port 31a. The lower wall 32 is positioned vertically apart from the upper wall 31. The lower wall 32 typically has a plate shape with a thickness in the vertical direction. In the illustrated example, the lower wall 32 has an exhaust port 32a. The exhaust port 32a can discharge exhaust gases generated in various processes. The side wall 33 is located between the upper wall 31 and the lower wall 32. The side wall 33 typically connects the peripheral end of the upper wall 31 to the peripheral end of the lower wall 32. In the illustrated example, the side wall 33 extends in the vertical direction.

[0037] In one embodiment, the showerhead 100 is supported in the chamber 3 so that the extension direction of the nozzle 1 (the axial direction of the outer cylinder 12) is substantially parallel to the vertical direction. In the illustrated example, the support substrate 2 included in the showerhead 100 is positioned vertically away from the upper wall 31. The peripheral edge of the support substrate 2 is connected to the side wall 33. The outlet port 1a included in the nozzle 1 communicates with the gas supply port 31a via the space between the support substrate 2 and the upper wall 31. Furthermore, the tip of the nozzle 1 (more specifically, the first end of the outer cylinder portion 12) is positioned with a gap in the vertical direction relative to the semiconductor substrate 7 supported by the electrostatic chuck 6.

[0038] The ring 4 is located on the opposite side of the showerhead 100 from the upper wall 31. The ring 4 is typically fixed to the lower wall 32 of the chamber 3. The ring 4 may have any suitable configuration depending on the application. The electrostatic chuck 6 is configured to support a semiconductor substrate 7. More specifically, the electrostatic chuck 6 is configured to chuck the semiconductor substrate 7 by the Johnson-Rahbek (JR) force. The electrostatic chuck 6 is typically located between the ring 4 and the showerhead 100 and is supported by the ring 4. Focus ring 5 is supported by ring 4 so as to surround electrostatic chuck 6. Focus ring 5 may have any suitable configuration depending on the application.

[0039] Although not shown, the semiconductor manufacturing apparatus 101 may include a control unit capable of controlling the heat temperature of each of the plurality of heating elements 11. The control unit is typically capable of controlling the voltage applied to the heating elements. Furthermore, semiconductor manufacturing equipment 101 may be equipped with a temperature measuring device capable of measuring the temperature of semiconductor substrate 7. The temperature measuring device can typically measure the temperature distribution of semiconductor substrate 7 and transmit the measurement results to the control unit.

[0040] In the semiconductor manufacturing apparatus 101, a film formation process and / or an etching process can be typically performed on a semiconductor substrate 7 supported by an electrostatic chuck 6. In these processes on the semiconductor substrate 7, any appropriate gas is supplied to the gas supply port 31a of the chamber 3 according to the process. As the gas passes through the multiple discharge ports 1a, the corresponding heating elements 11 adjust the temperature of the gas as desired. Since the multiple heating elements 11 include first through n-th heating elements that are electrically independent from one another, the temperature of the gas discharged from the multiple discharge ports can be adjusted locally as desired. Therefore, the temperature uniformity of the semiconductor substrate 7 can be improved during the film formation process and / or the etching process, and the entire semiconductor substrate 7 can be processed uniformly with precision. As a result, the semiconductor manufacturing apparatus 101 can smoothly manufacture semiconductor devices having fine structures. [Industrial Applicability]

[0041] The showerhead according to the embodiment of the present invention can be used in semiconductor manufacturing equipment, and can be particularly suitably used in semiconductor manufacturing equipment capable of performing etching processes and / or film deposition processes. [Explanation of symbols]

[0042] 1 nozzle 1a Discharge port 11 Heating element 2 Support substrate 100 shower heads 101 Semiconductor manufacturing equipment

Claims

1. A shower head applicable to a semiconductor manufacturing device, a plurality of outlets through which gas can pass; a plurality of heating elements provided corresponding to the plurality of ejection ports, the plurality of heating elements include at least a first heating element and a second heating element that are electrically independent from each other; The showerhead, wherein each of the plurality of heating elements is capable of heating gas passing through the corresponding outlet.

2. The showerhead of claim 1 , comprising a plurality of nozzles each including the outlet and the heating element.

3. The showerhead of claim 2 , further comprising a support substrate collectively supporting the plurality of nozzles.

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