Epoxy resin composition for semiconductor device encapsulation and semiconductor device encapsulated using the same

Abstract

To provide an epoxy resin composition for semiconductor device encapsulation that minimizes warpage, exhibits excellent adhesive strength to a redistribution layer, and has a low moisture absorption rate, thus achieving excellent reliability.SOLUTION: An epoxy resin composition for semiconductor device encapsulation comprises an epoxy resin, a curing agent, an inorganic filler, and a curing catalyst, where the epoxy resin includes an epoxy resin represented by the following formula to constitute the epoxy resin composition for semiconductor device encapsulation (where R1 to R6 are each independently hydrogen, a functional group containing a nitrogen atom, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C3 to C30 heterocycloalkyl group, a substituted or unsubstituted C7 to C30 arylalkyl group, or a substituted or unsubstituted C1 to C30 heteroalkyl group).SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present invention relates to an epoxy resin composition for sealing semiconductor devices and a semiconductor device sealed with the same. [Background technology]

[0002] As a method of sealing semiconductor devices, semiconductor chips are manufactured by dicing wafers, and then packaged in units of semiconductor chips. Alternatively, a process has been developed in which packaging is performed on undiced wafers and then diced into semiconductor chips. Generally, the former method is called Chip Scale Packaging (CSP), and the latter process is called Wafer Level Packaging (WLP).

[0003] Wafer-level packaging (WLP) offers advantages over chip-scale packaging (CSP), including a simpler process and a thinner package, reducing the required semiconductor packaging space. However, compared to chip-scale packaging (CSP), which seals individual chips, wafer-level packaging requires a larger deposition area, which can lead to significant warpage due to the difference in thermal expansion coefficients between the wafer and the encapsulant. Warpage can affect the yield of subsequent processes and wafer handling. Furthermore, liquid epoxy resins or silicone resins are currently used as encapsulants for WLP. These encapsulants have poor storage stability, making them difficult to store and unable to be re-stored after aging. Furthermore, their low filler content can reduce durability and reliability when applied to relatively thin wafer-level packaging. Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide an epoxy resin composition for encapsulating semiconductor devices, which minimizes warpage, has excellent adhesion to a re-distribution layer, and exhibits low moisture absorption, thereby achieving excellent reliability.

[0005] Another object of the present invention is to provide an epoxy resin composition for encapsulating semiconductor devices, which exhibits excellent durability even when applied to wafer level packaging and is in the form of solid particles, which is easy to store and use. [Means for solving the problem]

[0006] According to one embodiment, there is provided an epoxy resin composition for encapsulating a semiconductor device.

[0007] The epoxy resin composition for encapsulating a semiconductor device includes an epoxy resin, a curing agent, an inorganic filler, and a curing catalyst, and the epoxy resin includes an epoxy resin represented by the following Chemical Formula 1: [ka] (chemical formula 1) (In the above Chemical Formula 1, R 1 ~R 6 are each independently hydrogen, a functional group containing a nitrogen atom, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C3 to C30 heterocycloalkyl group, a substituted or unsubstituted C7 to C30 arylalkyl group, or a substituted or unsubstituted C1 to C30 heteroalkyl group).

[0008] According to another embodiment, a semiconductor device is provided.

[0009] The semiconductor element is sealed with the epoxy resin composition for sealing a semiconductor element of the present invention. [Effects of the Invention]

[0010] The present invention provides an epoxy resin composition for encapsulating semiconductor devices, which minimizes warpage, has excellent adhesion to a rewiring layer, and exhibits low moisture absorption, thereby achieving excellent reliability.

[0011] In addition, the present invention provides an epoxy resin composition for encapsulating semiconductor devices that exhibits excellent durability even when applied to wafer level packaging, and exhibits a solid particulate form that is easy to store and use. DETAILED DESCRIPTION OF THE INVENTION

[0012] In this specification, when describing a range of values, "X to Y" means X or more and Y or less.

[0013] In this specification, the term "substituted" in "substituted or unsubstituted" means that one or more hydrogen atoms of the functional group are substituted with a hydroxyl group, an amino group, a nitro group, a cyano group, an alkyl group having 1 to 20 carbon atoms, a haloalkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 30 carbon atoms, a heteroaryl group having 3 to 30 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, a heterocycloalkyl group having 3 to 10 carbon atoms, an arylalkyl group having 7 to 30 carbon atoms, or a heteroalkyl group having 1 to 30 carbon atoms.

[0014] As used herein, "hetero" can mean nitrogen, oxygen, or sulfur.

[0015] In the chemical formulas described herein, unless otherwise stated, hydrogen may be considered to be bonded in the structure of the chemical formula.

[0016] The epoxy resin composition for encapsulating a semiconductor device according to an embodiment of the present invention minimizes warpage, has excellent adhesion to a redistribution layer, and exhibits good moisture absorption, thereby achieving excellent reliability.The epoxy resin composition for encapsulating a semiconductor device according to an embodiment of the present invention exhibits excellent durability even when applied to wafer-level packaging, and may exhibit a solid particulate form that is easy to store and use.

[0017] The epoxy resin composition for encapsulating a semiconductor device includes an epoxy resin, a curing agent, an inorganic filler, and a curing catalyst, and the epoxy resin includes an epoxy resin represented by the following Chemical Formula 1. The epoxy resin represented by Chemical Formula 1 can provide the effects of the epoxy resin composition for encapsulating a semiconductor device described above.

[0018] Epoxy resin The epoxy resin includes an epoxy resin represented by the following Chemical Formula 1. The epoxy resin represented by Chemical Formula 1 minimizes the occurrence of warping, improves adhesion to the redistribution layer, and enables the production of a solid particulate, e.g., tablet-type, epoxy resin composition, thereby facilitating storage and use.

[0019] In one embodiment, when the epoxy resin of Chemical Formula 1 uses silica as an inorganic filler, the above-mentioned effects can be easily achieved.

[0020] [ka] (chemical formula 1) (In the above chemical formula 1, R 1 ~R 6 are each independently hydrogen, a functional group containing a nitrogen atom, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C3 to C30 heterocycloalkyl group, a substituted or unsubstituted C7 to C30 arylalkyl group, or a substituted or unsubstituted C1 to C30 heteroalkyl group).

[0021] In one embodiment, the nitrogen atom-containing functional group is an isocyanate group (-N=C=O), a cyano group (-CN), a nitro group (-NO), an amino group, or an amine group (-NR 7 R 8 , where R 7 and R 8may each independently be hydrogen, a substituted or unsubstituted C1 to C10 aryl group, or a substituted or unsubstituted C6 to C10 aryl group).

[0022] In one embodiment, the C6 to C30 aryl group or C6 to C30 aryloxy group is a monocyclic or heterocyclic aryl group, and may be a phenyl group, a biphenyl group, a naphthyl group, a naphthyloxy group, or an anthracenyl group.

[0023] In one embodiment, R 1 ~R 6 At least one of the groups may be a substituted or unsubstituted C6 to C30 aryl group or a functional group containing a nitrogen atom.

[0024] In one embodiment, R in Formula 1 above 1 ~R 6 may be hydrogen.

[0025] In one embodiment, R in Formula 1 above 4 and R 5 may each be hydrogen.

[0026] In one embodiment, R in Formula 1 above 1 and R 3 At least one of R may be a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, an amino group, or an amine group. 1 and R 3 At least one of may be an unsubstituted C1 to C10 alkyl group, an unsubstituted C1 to C5 alkyl group, an unsubstituted C6 to C20 aryl group, an unsubstituted C6 to C10 aryl group, or an NH2 group.

[0027] In one embodiment, R in Formula 1 above 2 and R 6At least one of R may be a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, an amino group, or an amine group. 2 and R 6 At least one of may be an unsubstituted C1 to C10 alkyl group, an unsubstituted C1 to C5 alkyl group, an unsubstituted C6 to C20 aryl group, an unsubstituted C6 to C10 aryl group, or an NH2 group.

[0028] For example, the epoxy resin of Formula 1 may include one or more of the following Formulas 1-1 to 1-4:

[0029] [ka] (Chemical formula 1-1)

[0030] [ka] (Chemical formula 1-2) [ka] (Chemical formula 1-3) [ka] (Chemical formula 1-4)

[0031] In one embodiment, Formula 1-1 and one or more of Formulas 1-2 to 1-4 may be included in a weight ratio of 1:1 to 1:10, for example, 1:2 to 1:8. Within this range, the effects of the epoxy resin composition described above may be easily achieved.

[0032] The epoxy resin of Formula 1 may be contained in an epoxy resin composition in one or more kinds, and may be contained in the epoxy resin composition in an amount of 0.1 to 17% by weight, for example, 2 to 17% by weight, particularly 2 to 10% by weight. Within this range, the heat dissipation properties of the composition may be improved, and the curing properties of the composition may not be reduced.

[0033] The epoxy resin of Chemical Formula 1 may be prepared by a method for preparing a conventional epoxy resin known to those skilled in the art, with reference to Chemical Formula 1 above.

[0034] The epoxy resin may consist solely of the epoxy resin of Chemical Formula 1. It may further contain an epoxy resin other than the epoxy resin of Chemical Formula 1 within a range that does not affect the effects of the present invention. For convenience, the epoxy resin of Chemical Formula 1 will be referred to as the first epoxy resin, and the epoxy resin other than the epoxy resin of Chemical Formula 1 will be referred to as the second epoxy resin.

[0035] The second epoxy resin has two or more epoxy groups in its molecule, and may be a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a phenol novolac type epoxy resin, a tert-butylcatechol type epoxy resin, a naphthalene type epoxy resin, a glycidylamine type epoxy resin, a cresol novolac type epoxy resin, a biphenyl type epoxy resin, a phenol aralkyl type epoxy resin, a linear aliphatic epoxy resin, an alicyclic epoxy resin, a heterocyclic epoxy resin, a spiro ring-containing epoxy resin, a cyclohexane dimethanol type epoxy resin, a trimethylol type epoxy resin, a halogenated epoxy resin, etc. The second epoxy resin may be contained alone or in a mixture of two or more types.

[0036] The epoxy resin may be contained in the epoxy resin composition in an amount of 2 to 17% by weight, for example, 2 to 10% by weight. Within this range, the curability of the composition may not be reduced.

[0037] hardener Examples of curing agents include polyfunctional phenolic resins, phenol aralkyl phenolic resins, phenol novolac phenolic resins, Xylok phenolic resins, cresol novolac phenolic resins, naphthol phenolic resins, terpene phenolic resins, dicyclopentadiene-based phenolic resins, novolac phenolic resins synthesized from bisphenol A and resol; polyhydric phenolic compounds including tris(hydroxyphenyl)methane and dihydroxybiphenyl; acid anhydrides including maleic anhydride and phthalic anhydride; and aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenyl sulfone. Preferably, the curing agent may be a Xylok phenolic resin or a phenol aralkyl phenolic resin.

[0038] The curing agent may be contained in the epoxy resin composition in an amount of 0.5 to 13% by weight. Within this range, the curability of the composition may not be reduced.

[0039] inorganic fillers The inorganic filler can improve the mechanical properties of the epoxy resin composition and can further reduce stress.

[0040] The inorganic filler may include one or more of fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, and glass fiber.

[0041] Preferably, the inorganic filler can contain fused silica, which has a low linear expansion coefficient to reduce stress. Fused silica refers to amorphous silica with a true specific gravity of 2.3 or less, and can be produced by melting crystalline silica or synthesized from various raw materials. The shape and particle size of the fused silica are not particularly limited. A fused silica mixture containing 50% to 99% by weight of spherical fused silica with an average particle size of 5 μm to 30 μm and 1% to 50% by weight of spherical fused silica with an average particle size of 0.001 μm to 1 μm is preferably included in the total inorganic filler at 40% to 100% by weight. Furthermore, the maximum particle size of the fused silica can be adjusted to 45 μm, 55 μm, 75 μm, or the like, depending on the application.

[0042] The amount of inorganic filler used varies depending on the required physical properties, such as thermal conductivity, moldability, low stress, and high-temperature strength. In an embodiment, the inorganic filler may be included in the epoxy resin composition in an amount of 50 to 95% by weight, specifically 70 to 95% by weight, and more specifically 85 to 95% by weight. Within this range, the flame retardancy, flowability, and reliability of the epoxy resin composition can be ensured.

[0043] curing catalyst The curing catalyst may be a tertiary amine compound, an organometallic compound, an organophosphorus compound, an imidazole compound, or a boron compound. Examples of tertiary amine compounds include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tri(dimethylaminomethyl)phenol, 2-2-(dimethylaminomethyl)phenol, 2,4,6-tris(diaminomethyl)phenol, and tri-2-ethylhexyl salt. Examples of organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, and nickel acetylacetonate. Examples of organophosphorus compounds include triphenylphosphine, tris-4-methoxyphosphine, triphenylphosphine triphenylborane, and triphenylphosphine-1,4-benzoquinone adduct. Examples of imidazole compounds include 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1-vinylimidazole, 2-ethyl-4-methylimidazole, and 2-heptadecylimidazole. Examples of boron compounds include triphenylphosphine tetraphenylborate, tetraphenylboron salts, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane triethylamine, and tetrafluoroborane amine. Other compounds that can be used include 1,5-diazabicyclo[4.3.0]non-5-ene (DBN), 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU), and phenol novolac resin salts.

[0044] As the curing catalyst, an adduct formed by a prior reaction with an epoxy resin or a curing agent can also be used.

[0045] The curing catalyst may be included in the epoxy resin composition in an amount of 0.01 to 5% by weight, which may ensure the fluidity of the composition without delaying the curing reaction time.

[0046] The epoxy resin composition may further include typical additives that may be included in epoxy resin compositions for encapsulating semiconductor devices. In an embodiment, the additives may include one or more of a coupling agent, a release agent, a colorant, a stress relief agent, a crosslinking enhancer, and a leveling agent.

[0047] The coupling agent improves the interfacial strength by reacting with the epoxy resin and the inorganic filler, and may be, for example, a silane coupling agent. The silane coupling agent may be any agent that reacts with the epoxy resin and the inorganic filler to improve the interfacial strength between the epoxy resin and the inorganic filler, and the type is not particularly limited. Specific examples of silane coupling agents include epoxysilane, aminosilane, ureidosilane, mercaptosilane, and alkylsilane. The coupling agents may be used alone or in combination. The coupling agent may be contained in the epoxy resin composition for encapsulating semiconductor elements in an amount of 0.01% by weight to 5% by weight, preferably 0.05% by weight to 3% by weight. Within this range, the strength of the cured product of the epoxy resin composition can be improved.

[0048] The release agent may be one or more selected from the group consisting of paraffin wax, ester wax, higher fatty acid, higher fatty acid metal salt, natural fatty acid, and natural fatty acid metal salt, and may be contained in an amount of 0.1 to 1% by weight in the epoxy resin composition.

[0049] Carbon black can be used as the colorant, and the colorant may be contained in the epoxy resin composition in an amount of 0.1 to 1% by weight.

[0050] The stress relaxation agent may be at least one selected from the group consisting of modified silicone oil, silicone elastomer, silicone powder, and silicone resin, but is not limited thereto. The stress relaxation agent may be contained in the epoxy resin composition in an amount of 0 to 2% by weight, for example, 0 to 1% by weight, particularly 0.1 to 1% by weight.

[0051] The additive may be included in the epoxy resin composition at 0.1 wt % to 5 wt %, for example, 0.1 wt % to 3 wt %.

[0052] The method for producing the epoxy resin composition is not particularly limited, but the composition may be produced by uniformly mixing the components contained in the composition using a Henschel mixer or a Loedige mixer, melt-kneading the components at 90°C to 120°C using a roll mill or a kneader, and then cooling and pulverizing the components.

[0053] The semiconductor device of the present invention is encapsulated using the epoxy resin composition for encapsulating a semiconductor device of the present invention. The method for encapsulating a semiconductor device using the epoxy resin composition of the present invention may include, but is not limited to, transfer molding, injection molding, casting molding, compression molding, etc. In one embodiment, the semiconductor device of the present invention may be encapsulated by a low-pressure transfer molding method, and in another embodiment, by compression molding. [Example]

[0054] The structure and operation of the present invention will be described in more detail below through preferred examples of the present invention, which are presented as preferred examples of the present invention and should not be construed as limiting the present invention in any way.

[0055] Production Example 1: Production of epoxy resin (a1) The compound of Formula 2-1 below was placed in 1,2-dichloroethane solvent and reacted in the presence of an excess amount of hydrogen peroxide and a small amount of molybdenum catalyst while heating at 80°C for 1 hour. After cooling the reaction mixture to room temperature, the remaining unreacted compound of Formula 2-1 was removed using a rotary evaporator (bath temperature: 50°C, pressure: 30 mbar). The resulting compound was dissolved in toluene, and the reaction mixture was heated at 80°C. The reaction mixture was filtered and the remaining solvent was removed using a rotary evaporator to produce an epoxy resin of Formula 1-1 below.

[0056] [ka] (Chemical formula 2-1)

[0057] [ka] (Chemical formula 1-1)

[0058] Production Example 2: Production of epoxy resin (a2) The compound of the following formula 1-2 was prepared in the same manner as in Preparation Example 1, except that the compound of the following formula 2-2 was used instead of the compound of the following formula 2-1 in Preparation Example 1.

[0059] [ka] (Chemical formula 2-2)

[0060] [ka] (Chemical formula 1-2)

[0061] Production Example 3: Production of epoxy resin (a3) The compound of the following formula 1-3 was prepared in the same manner as in Preparation Example 1, except that the compound of the following formula 2-3 was used instead of the compound of the following formula 2-1 in Preparation Example 1.

[0062] [ka] (Chemical formula 2-3)

[0063] [ka] (Chemical formula 1-3)

[0064] Production Example 4: Production of epoxy resin (a4) The compound of the following formula 1-4 was prepared in the same manner as in Preparation Example 1, except that the compound of the following formula 2-4 was used instead of the compound of the following formula 2-1 in Preparation Example 1.

[0065] [ka] (Chemical formula 2-4)

[0066] [ka] (Chemical formula 1-4)

[0067] The specific specifications of the components used in the following examples and comparative examples are as follows:

[0068] (A) Epoxy resin (a1) to (a4) Epoxy resins of production examples (a5) Phenol aralkyl epoxy resin (NC-3000, manufactured by Nippon Kayaku Co., Ltd.) (a6) Biphenyl-type epoxy resin (YX-4000H, manufactured by Mitsubishi Chemical Corporation) (a7) Polycyclic aromatic epoxy resin having an anthracene skeleton (YX-8800, manufactured by Mitsubishi Chemical Corporation)

[0069] (B) Hardener (b1) KPH-F3065 (Zylok type phenolic resin, manufactured by Colon Chemical Co.) (b2) MEH-7851 (phenol aralkyl type phenolic resin, manufactured by Meiwa Chemical Industry Co., Ltd.)

[0070] (C) Curing catalyst (c1) Triphenylphosphine (manufactured by Hokko Chemical Industry Co., Ltd.) (c2) 1,4-benzoquinone (Sigma-Aldrich)

[0071] (D) Inorganic filler: A 9:1 weight ratio mixture of spherical fused silica with an average particle size (D50) of 20 μm and spherical fused silica with an average particle size (D50) of 0.5 μm

[0072] (E) Coupling Agent (e1) Methyltrimethoxysilane (SZ-6070, manufactured by Dow Corning) (e2) KBM-573 (N-phenyl-3-aminopropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.)

[0073] (F) Colorant: Carbon black (MA-600B, manufactured by Mitsubishi Chemical Corporation)

[0074] Examples 1 to 5 and Comparative Examples 1 to 3 An epoxy resin composition for encapsulating semiconductor devices was prepared by uniformly mixing the components (unit: parts by weight) in Table 1 below using a Henschel mixer (Kunsung Machinery, KSM-22) at 25°C to 30°C for 30 minutes, melt-kneading the mixture in a continuous kneader at a maximum of 110°C for 30 minutes, cooling it to 10°C to 15°C, and pulverizing it. Then, 4.5 g of the epoxy resin composition was sampled, put into a tablet manufacturing facility, and pressed under a weight of 12 tons to prepare a tablet-type encapsulant with an outer diameter of 14 mm.

[0075] In Table 1 below, "-" means that the component is not included.

[0076] The prepared epoxy resin compositions for sealing semiconductor elements were evaluated for the following physical properties, and the results are shown in Table 1 below.

[0077] (1) Glass transition temperature (unit: °C) and thermal expansion coefficient (unit: ppm / °C): Test specimens were prepared by transfer molding 4.2 g of the sealing compositions prepared in the examples and comparative examples (molding temperature: 175°C, curing time: 120 seconds, transfer time: 14 seconds, transfer speed: 1.2 mm / sec, clamp pressure: 40 tons, transfer pressure: 1 ton), and the glass transition temperature and thermal expansion coefficient (α1, α2) of the test specimens were measured using a TMA (TA (United States) Q400). The thermal expansion coefficient before the glass transition temperature was defined as α1, and the thermal expansion coefficient after the glass transition temperature was defined as α2.

[0078] (2) Warpage (unit: μm): After adhesive tape was attached to a carrier wafer (200 mm x 8 inches or 300 mm x 12 inches), a single silicone chip was reconfigured on top of the carrier wafer with the adhesive tape using a pick-and-place process. After the chip was reconfigured, pre-baking was performed at 120°C. The temperature was then increased to 120°C to 170°C, and the encapsulating compositions prepared according to the Examples and Comparative Examples were applied to the carrier wafer, which was then cooled to room temperature to form a wafer-level encapsulating layer. After forming the encapsulating layer, the wafer height and cross section were measured at approximately 70,000 points using a laser using a WDM-300 from Lasertec Co., Ltd. (Korea), and the warpage at the wafer level was expressed as the average of the measured values.

[0079] The temperature of the carrier wafer was then raised to 150-200°C, separating the carrier wafer from the sealed semiconductor chip. A redistribution layer was then formed on the molded wafer by spin-coating a polybenzoazole precursor solution. The separated semiconductor chip was then placed on the redistribution layer and UV-cured. Individual semiconductor packages were then fabricated by dicing. The warpage of the individual semiconductor packages fabricated as described above was measured using a Shadow Moire system (AKRO MATRIX manufactured by IPO) in accordance with JESD22-B112.

[0080] (3) Moisture absorption rate (unit: %): Test specimens were prepared using the sealing compositions of the Examples and Comparative Examples. The test specimens were prepared by forming disc-type cured test specimens with a diameter of 5 cm and a depth of 5 mm using a 30-ton press molding machine and post-curing them in a drying oven at 175°C for 2 hours. The initial weight of the prepared test specimen was measured to the nearest 0.001 g, and the test specimen was exposed to 120°C, 2 atmospheres, and 100% relative humidity in a PCT (Pressure Cooking Tester) chamber (EHS-211MD, manufactured by ESPEC) for 24 hours. The weight after exposure was measured to the nearest 0.001 g, and the moisture absorption rate was calculated. The moisture absorption rate was expressed as an average value obtained by measuring three times.

[0081] (4) Adhesion strength (unit: kgf): A Ni metal plate measuring 35 mm x 35 mm x 2 mm in width, height, and depth was plasma-treated, and then a PBO (polybenzoxazole) liquid-type re-distribution layer (RDL) layer was spin-coated to a thickness of 15 μm to 20 μm and cured at 200°C to prepare a substrate with an RDL layer. The sealing compositions of the examples and comparative examples were molded onto the substrate under conditions of a mold temperature of 175°C, a transfer pressure of 9 MPa, a transfer speed of 1 mm / sec, and a curing time of 90 seconds to obtain cured test specimens. The cured test specimens were then placed in a 175°C oven and post-mold cured (PMC) for 4 hours. The semiconductor packages were then left at 60°C and 60% relative humidity for 120 hours, and then subjected to IR-Reflow at 260°C for 30 seconds, repeating this process three times. Under these preconditioning conditions, the semiconductor packages were evaluated for cracking using a C-SAM (Sonix scanning acoustic microscope, an instrument that detects peeling using sound waves), and the tensile strength (kgf) was measured. The area of ​​the epoxy resin composition in contact with the substrate was 1cm x 1cm, and the tensile strength was measured using a UTM (Universal Testing Machine) for three test pieces per measurement step, and the average value was calculated.

[0082] [Table 1]

[0083] As shown in Table 1, the epoxy resin compositions for semiconductor device encapsulation according to the examples minimize warpage, have excellent adhesion to the redistribution layer, and exhibit low moisture absorption, thereby achieving excellent reliability and durability when applied to wafer-level packaging. The epoxy resin compositions for semiconductor device encapsulation according to the examples have low moisture absorption, allowing them to exhibit a solid particulate form that is easy to store and use.

[0084] However, the epoxy resin composition for sealing semiconductor elements of the comparative example could not provide the effects of the examples.

[0085] Simple variations and modifications of the present invention can be easily implemented by those skilled in the art, and all such variations and modifications can be considered to be included within the scope of the present invention.

Claims

1. Epoxy resin, A hardener; an inorganic filler; a curing catalyst; The epoxy resin includes an epoxy resin represented by the following Chemical Formula 1: Epoxy resin composition for sealing semiconductor elements: 【Chemistry 1】 (Chemical formula 1) (In the above Chemical Formula 1, R １ ~R ６ are each independently hydrogen, a functional group containing a nitrogen atom, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C3 to C30 heterocycloalkyl group, a substituted or unsubstituted C7 to C30 arylalkyl group, or a substituted or unsubstituted C1 to C30 heteroalkyl group).

2. In the above Chemical Formula 1, R １ ~R ６ is hydrogen, or R １ and R ３ at least one of is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, an amino group, or an amine group; R ２ and R ６ at least one of is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, an amino group, or an amine group; R ４ and R ５ are hydrogen, The epoxy resin composition for sealing semiconductor elements according to claim 1.

3. The epoxy resin of the formula 1 includes at least one of the epoxy resins of the formulas 1-1 to 1-4. The epoxy resin composition for sealing semiconductor elements according to claim 1: 【Chemistry 2】 (Chemical formula 1-1) 【Transformation 3】 (Chemical formula 1-2) 【Chemistry 4】 (Chemical formula 1-3) 【Transformation 5】 (Chemical formula 1-4).

4. The epoxy resin of Formula 1 is contained in the epoxy resin composition in an amount of 0.1 to 17% by weight. The epoxy resin composition for sealing semiconductor elements according to claim 1.

5. The inorganic filler includes silica. The epoxy resin composition for sealing semiconductor elements according to claim 1.

6. 2% to 17% by weight of the epoxy resin, 0.5% to 13% by weight of the curing agent; 50% to 95% by weight of the inorganic filler, and The curing catalyst comprises 0.01% by weight to 5% by weight. The epoxy resin composition for sealing semiconductor elements according to claim 1.

7. A semiconductor element sealed with the epoxy resin composition for sealing semiconductor elements according to any one of claims 1 to 6.

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