Substrate Processing Equipment

Abstract

The present invention provides an apparatus for treating a substrate, the apparatus for treating a substrate including a process processing unit providing a processing space for treating the substrate, and a plasma generating unit provided on an upper portion of the process processing unit for generating plasma from a process gas, the plasma generating unit including a plasma chamber in which a discharge space is formed, a shield unit surrounding the outside of the plasma chamber, an antenna surrounding the shield unit on the outside of the shield unit and receiving high frequency power, and a connection unit electrically connecting the shield unit and the antenna.

Description

[Technical field]

[0001] The present invention relates to an apparatus for processing a substrate, and more particularly to an apparatus for processing a substrate by utilizing plasma. [Background technology]

[0002] Plasma is an ionized gas state consisting of ions, radicals, and electrons. Plasma can be generated by very high temperatures, strong electric fields, or RF electromagnetic fields. Semiconductor device manufacturing processes include ashing and etching processes that use plasma to remove thin films on substrates. Ashing and etching processes are performed when ion and radical particles contained in plasma collide with or react with films on the substrate.

[0003] In general, a shielding member is attached to a plasma source that generates plasma. The shielding member is located between an antenna and a chamber, and can minimize direct exposure of a high voltage applied to the antenna to the plasma. However, since the shielding member is provided to be grounded, the inner wall of the chamber is shielded. This reduces the discharge efficiency of the initial plasma generated inside the chamber. In addition, etching of the inner wall of the chamber shielded by the shielding member is not performed smoothly. Furthermore, by-products deposited on the inner wall of the chamber are not etched, and are difficult to remove. The by-products deposited on the inner wall of the chamber hinder the formation of uniform plasma inside the chamber, thereby acting as a factor that impairs the uniformity of substrate processing. Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a substrate processing apparatus capable of efficiently performing plasma processing on a substrate.

[0005] Another object of the present invention is to provide a substrate processing apparatus capable of improving the initial discharge efficiency of a plasma source.

[0006] Another object of the present invention is to provide a substrate processing apparatus capable of efficiently controlling the etching action inside a chamber where plasma is generated.

[0007] Another object of the present invention is to provide a substrate processing apparatus capable of minimizing deposition of by-products on the inner wall of a chamber where plasma is generated.

[0008] The problems that the present invention is intended to solve are not limited to those mentioned above, and problems not mentioned will be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the attached drawings. [Means for solving the problem]

[0009] The present invention provides an apparatus for treating a substrate, the apparatus for treating a substrate including a process processing unit providing a processing space for treating the substrate, and a plasma generating unit provided on an upper portion of the process processing unit for generating plasma from a process gas, the plasma generating unit including a plasma chamber in which a discharge space is formed, a shield unit surrounding the outside of the plasma chamber, an antenna surrounding the shield unit on the outside of the shield unit and receiving high frequency power, and a connection unit electrically connecting the shield unit and the antenna.

[0010] According to one embodiment, the shield unit includes a first shield member surrounding one side of the plasma chamber along a circumferential direction of the plasma chamber, and a second shield member surrounding another side opposite the one side of the plasma chamber in opposition to the first shield member, and the first shield member and the second shield member may be combined with each other to surround an outer side of the plasma chamber.

[0011] According to an embodiment, the first shielding member and the second shielding member may be electrically isolated from each other.

[0012] According to one embodiment, a power terminal to which high frequency power is applied is formed at an upper end of the antenna, and a ground terminal to be grounded is formed at a lower end of the antenna, and the connection unit includes a first connection member that electrically and directly connects a first fulcrum of the antenna and the first shielding member and a second connection member that electrically and directly connects a second fulcrum of the antenna and the second shielding member, and a distance from the first fulcrum to the power terminal and a distance from the second fulcrum to the power terminal may be provided differently.

[0013] According to one embodiment, the first supporting point may be located in an upper region of the antenna, and the second supporting point may be located in a middle region of the antenna.

[0014] According to an embodiment, the connection unit may be provided to be movable along a length direction of the antenna.

[0015] According to an embodiment, the connection unit may include a first connection portion in contact with the antenna and a second connection portion extending from the first connection portion in a direction toward the shield unit and in contact with the shield unit.

[0016] According to an embodiment, the first connector may be formed to surround an outer surface of the antenna and may be provided to be slidably movable along the outer surface of the antenna.

[0017] According to an embodiment, the first connecting portion may be in surface contact with the antenna, and the second connecting portion may be in point contact with the shield unit.

[0018] According to an embodiment, the first connecting portion may be in surface contact with the antenna, and the second connecting portion may be in surface contact with the shield unit.

[0019] According to an embodiment, the second connection portion may be formed to have a curvature in a direction toward the first connection portion.

[0020] According to one embodiment, the second connecting portion is provided using a material having elasticity, and an elastic member may be further provided between one fulcrum of the second connecting portion where the second connecting portion and the shield unit make point contact and another fulcrum of the antenna that matches the one fulcrum.

[0021] According to an embodiment, the vertical length of the shield unit may be provided to correspond to or be greater than the vertical length of the antenna.

[0022] The present invention also provides an apparatus for treating a substrate, the apparatus for treating a substrate may include a chamber providing a plasma generation region, an antenna disposed in contact with the chamber and having a power terminal to which high frequency power is applied and a ground terminal to which the ground terminal is grounded, a shield unit disposed between the chamber and the antenna, and a connection unit electrically connecting the shield unit and the antenna.

[0023] According to one embodiment, the antenna is arranged to surround the outside of the chamber, and the shielding unit includes a first shielding member and a second shielding member arranged to be spaced apart in a direction surrounding the chamber, and the first shielding member and the second shielding member may be electrically isolated from each other.

[0024] According to one embodiment, the connection unit includes a first connection member connecting the first shield member to a first fulcrum of the antenna and a second connection member connecting the second shield member to a second fulcrum of the antenna, and the first fulcrum and the second fulcrum may be at different distances from the power terminal.

[0025] According to an embodiment, the connection unit may be provided to be movable along a length direction of the antenna.

[0026] According to an embodiment, the connection unit may include a first connection portion in contact with the antenna and a second connection portion extending from the first connection portion in a direction toward the shield unit and in contact with the shield unit.

[0027] According to one embodiment, the first connecting portion is formed to surround an outer surface of the antenna and is in surface contact with the antenna and is provided to be able to slide along the outer surface of the antenna, and the second connecting portion is formed to have a curvature in a direction toward the first connecting portion and can be in point contact with the shield unit.

[0028] According to one embodiment, the second connecting portion is provided using a material having elasticity, and an elastic member may be further provided between one fulcrum of the second connecting portion where the second connecting portion and the shield unit make point contact and another fulcrum of the antenna that matches the one fulcrum. Effect of the Invention

[0029] According to an embodiment of the present invention, plasma processing can be efficiently performed on a substrate.

[0030] Furthermore, according to an embodiment of the present invention, the initial discharge efficiency of the plasma source can be improved.

[0031] Furthermore, according to an embodiment of the present invention, the etching action inside the chamber where the plasma is generated can be efficiently controlled.

[0032] In addition, according to an embodiment of the present invention, deposition of by-products on the inner wall of a chamber where plasma is generated can be minimized.

[0033] The effects of the present invention are not limited to the effects described above, and effects not mentioned will be clearly understood by those having ordinary skill in the art to which the present invention pertains from this specification and the accompanying drawings. [Brief description of the drawings]

[0034] [Figure 1] FIG. 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a schematic diagram showing an embodiment of a process chamber for performing a plasma processing process among the process chambers of the substrate processing apparatus of FIG. [Diagram 3] FIG. 3 is a perspective view showing a schematic configuration of the plasma generating unit according to the embodiment of FIG. [Figure 4] FIG. 4 is a perspective view that shows a schematic view of the shield unit according to the embodiment of FIG. [Diagram 5] FIG. 5 is a schematic view of a first connecting member according to an embodiment of FIG. [Figure 6] FIG. 6 is a schematic view showing the first connecting member and the first shielding member of FIG. 2 in contact with each other. [Figure 7] FIG. 7 is a diagram showing a schematic view of the plasma chamber of FIG. 2 as viewed from above. [Figure 8] FIG. 8 is a perspective view showing another embodiment of the shield unit of FIG. [Figure 9] FIG. 9 is a perspective view showing another embodiment of the shield unit of FIG. [Figure 10] FIG. 10 is a diagram showing a schematic diagram of another embodiment of the connection unit of FIG. [Figure 11] FIG. 11 is a diagram showing a schematic diagram of another embodiment of the connection unit of FIG. [Figure 12] FIG. 12 is a schematic diagram showing another embodiment of the process chamber of FIG. [Figure 13] FIG. 13 is a diagram showing a schematic view of the shield unit of FIG. 12 as viewed from above. [Figure 14] FIG. 14 is a schematic diagram showing another embodiment of the process chamber of FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0035] Hereinafter, the embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various ways, and the scope of the present invention should not be interpreted as being limited to the embodiments described below. The embodiments are provided to more completely explain the present invention to those having average knowledge in the art. Therefore, the shapes of components in the drawings are exaggerated to emphasize a clearer description.

[0036] Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS.

[0037] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1, the substrate processing apparatus 1 includes an equipment front end module (EFFM) 20 and a processing module 30. The equipment front end module 20 and the processing module 30 are arranged in one direction. Hereinafter, the direction in which the equipment front end module 20 and the processing module 30 are arranged is defined as a first direction 11. Also, a direction perpendicular to the first direction 11 is defined as a second direction 12, and a direction perpendicular to both the first direction 11 and the second direction 12 is defined as a third direction 13.

[0038] The front end module 20 has a load port 21 and a transfer frame 23. The load port 21 is disposed in front of the front end module 20 in the first direction 11. The load port 21 has a support part 22. A plurality of supports 22 may be provided. Each support part 22 may be disposed in a row in the second direction 12. Each support part 22 seats a substrate W to be provided for a process and a carrier C (e.g., a cassette, FOUP, etc.) containing a substrate W after the process is completed.

[0039] The transfer frame 23 is disposed between the load port 21 and the processing module 30. The transfer frame 23 may have an internal space. The load port 21 and a first transfer robot 25 may be disposed in the internal space of the transfer frame 23. The first transfer robot 25 may transfer the substrate (W) between the load port 21 and the processing module 30. The first transfer robot 25 may move along a transfer rail 27 provided in the second direction 12 to transfer the substrate (W) between the carrier (C) and the processing module 30.

[0040] The processing module 30 may include a load lock chamber 40 , a transfer chamber 50 , and a process chamber 60 .

[0041] The load lock chamber 40 is disposed adjacent to the transfer frame 23. For example, the load lock chamber 40 may be disposed between the transfer chamber 50 and the front end module 20. The load lock chamber 40 provides a space in which a substrate W to be provided for a process waits before being transferred to the process chamber 60, or a substrate W after a process is completed waits before being transferred to the front end module 20.

[0042] The transfer chamber 50 is disposed adjacent to the load lock chamber 40. The transfer chamber 50 may have a polygonal body when viewed from above. For example, the transfer chamber 50 may have a pentagonal body when viewed from above. The load lock chamber 40 and a plurality of process chambers 60 may be disposed around the outside of the body. A passage (not shown) through which the substrate (W) enters and exits may be formed on each side wall of the body. The passage (not shown) may connect the transfer chamber 50 to the load lock chamber 40 or the process chambers 60. Each passage (not shown) may be provided with a door (not shown) that opens and closes the passage (not shown) to seal the inside.

[0043] A second transfer robot 55 for transferring a substrate (W) between the load lock chamber 40 and the process chambers 60 is disposed in the internal space of the transfer chamber 50. The second transfer robot 55 can transfer an unprocessed substrate (W) waiting in the load lock chamber 40 to the process chamber 60. The second transfer robot 55 can transfer a substrate (W) for which a process process has been completed to the load lock chamber 40. In addition, the second transfer robot 55 can transfer a substrate (W) between the process chambers 60 to sequentially provide the substrate (W) to the plurality of process chambers 60.

[0044] 1, when the transfer chamber 50 has a pentagonal body, the load lock chambers 40 may be disposed on the side walls adjacent to the front end module 20, and the process chambers 60 may be disposed in succession on the remaining side walls. However, the shape of the transfer chamber 50 is not limited to the above example, and may be modified in various forms according to the required process module.

[0045] The process chambers 60 are arranged along the periphery of the transfer chamber 50. A plurality of process chambers 60 may be provided. A process is performed on a substrate (W) in each process chamber 60. The process chamber 60 receives the substrate (W) from the second transfer robot 55, processes the substrate (W), and provides the processed substrate (W) to the second transfer robot 55.

[0046] The process performed in each process chamber 60 may be different from each other. The process performed in the process chamber 60 may be one process in a process of producing a semiconductor device or a display panel using a substrate (W). The substrate (W) processed by the substrate processing apparatus 1 is a comprehensive concept including all substrates (W) used in the manufacture of semiconductor devices, flat panel displays (FPs), and other products on which thin films are formed with circuit patterns. For example, the substrate (W) may be a silicon wafer, a glass substrate, an organic substrate, etc.

[0047] 2 is a schematic diagram showing an embodiment of a process chamber for performing a plasma processing process among the process chambers of the substrate processing apparatus of FIG 1. Hereinafter, a process for processing a substrate (W) using plasma in the process chamber 60 will be described as an example.

[0048] 2, the process chamber 60 can perform a predetermined process on a substrate (W) using plasma. For example, the process chamber 60 can etch or ash a thin film on the substrate (W). The thin film can be various types of films such as a polysilicon film, an oxide film, and a silicon nitride film. Alternatively, the thin film can be a natural oxide film or an oxide film generated by a chemical reaction.

[0049] The process chamber 60 may include a process processing section 100 , an exhaust section 200 , a plasma generating section 300 , and a diffusion section 400 .

[0050] The processing unit 100 provides a processing space 101 in which a substrate (W) is placed and processed. A plasma generator 300 (to be described later) discharges a process gas to generate plasma, and the generated plasma is supplied to the processing space 101 of the processing unit 100. The process gas and / or reaction by-products generated during processing of the substrate (W) that remain inside the processing unit 100 are exhausted to the outside of the process chamber 60 through an exhaust unit 200 (to be described later). This allows the internal pressure of the processing unit 100 to be maintained at a set pressure.

[0051] The processing unit 100 may include a housing 110 , a support unit 120 , a baffle 130 , and an exhaust baffle 140 .

[0052] The housing 110 has a processing space therein in which the substrate (W) is processed. The outer wall of the housing 110 may be made of a conductor. In one example, the outer wall of the housing 110 may be made of a metal material including aluminum. According to one embodiment, the housing 110 may be grounded. The top of the housing 110 may be open. The open top of the housing 110 may be connected to a diffusion chamber 410, which will be described later. An opening (not shown) may be formed in a side wall of the housing 110. The opening (not shown) may be opened and closed by the same opening and closing member as a door (not shown). The substrate (W) enters and exits the inside of the housing 110 through an opening (not shown) formed in the side wall of the housing 110.

[0053] In addition, exhaust holes 112 may be formed on the bottom surface of the housing 110. The exhaust holes 112 may exhaust process gases and / or by-products flowing through the processing space 101 to the outside of the processing space 101. The exhaust holes 112 may be connected to components included in an exhaust unit 200, which will be described later.

[0054] The support unit 120 is located inside the processing space 101. The support unit 120 supports a substrate (W) in the processing space 101. The support unit 120 may include a support plate 122 and a support shaft .

[0055] The support plate 122 may fix and / or support an object. The support plate 122 may fix and / or support a substrate (W). The support plate 122 may be provided in a generally circular plate shape when viewed from above. The support plate 122 is supported by a support shaft 124. The support plate 122 may be connected to an external power source (not shown). The support plate 122 may generate static electricity by power applied from the external power source (not shown). The electrostatic force of the generated static electricity may fix the substrate (W) on the upper surface of the support plate 122. However, the present invention is not limited thereto, and the support plate 122 may fix and / or support the substrate (W) by a physical method such as mechanical clamping or a vacuum suction method.

[0056] The support shaft 124 can move an object. The support shaft 124 can move a substrate (W) in an up-down direction. For example, the support shaft 124 is coupled to the support plate 122 and can raise and lower the support plate 122 to move the substrate (W) placed on the upper surface of the support plate 122 up and down.

[0057] The baffle 130 can uniformly transfer plasma generated in the plasma generating unit 300 (described later) to the processing space 101. The baffle 130 can uniformly distribute plasma generated in the plasma generating unit 300 and flowing inside the diffusion unit 400 to the processing space 101.

[0058] The baffle 130 may be disposed between the process processor 100 and the plasma generator 300. The baffle 130 may be disposed between the support unit 120 and the diffusion unit 400. For example, the baffle 130 may be disposed on the upper part of the support plate 122.

[0059] The baffle 130 may have a plate shape. The baffle 130 may have a generally circular plate shape when viewed from above. The baffle 130 may be disposed to overlap the upper surface of the support plate 122 when viewed from above.

[0060] Baffle holes 132 are formed in the baffle 130. A plurality of baffle holes 132 may be provided. The baffle holes 132 may be provided spaced apart from each other. For example, the baffle holes 132 may be formed at regular intervals on a concentric circumference of the baffle 130 to uniformly supply plasma (or radicals). The plurality of baffle holes 132 may penetrate the baffle 130 from the upper end to the lower end. The plurality of baffle holes 132 may function as a passage through which the plasma generated in the plasma generating unit 330 flows into the processing space 101.

[0061] The surface of the baffle 130 may be made of an oxidized aluminum material. The baffle 130 may be electrically connected to an upper wall of the housing 110. Optionally, the baffle 130 may be independently grounded. When the baffle 130 is grounded, it may capture ions contained in the plasma passing through the baffle holes 132. For example, charged particles such as electrons or ions contained in the plasma may be confined in the baffle 130, and neutral particles that do not carry a charge such as radicals contained in the plasma may pass through the baffle holes 132 and be supplied to the processing space 101.

[0062] Although the baffle 130 according to the embodiment of the present invention has been described as having a disk shape having a thickness, the present invention is not limited thereto. For example, the baffle 130 may have a generally circular shape when viewed from above, but may have a shape in which the height of the upper surface of the baffle 130 increases from the edge region to the center region when viewed from the cross section. For example, the upper surface of the baffle 130 may have a shape that slopes upward from the edge region to the center region when viewed from the cross section. Thus, the plasma generated from the plasma generating unit 330 may flow to the edge region of the processing space 101 along the sloped cross section of the baffle 130.

[0063] The exhaust baffle 140 uniformly exhausts the plasma flowing in the processing space 101 from region to region. In addition, the exhaust baffle 140 can adjust the residence time of the plasma flowing in the processing space 101. The exhaust baffle 140 has a ring shape when viewed from above. The exhaust baffle 140 can be located between the inner wall of the housing 110 and the support unit 120 in the processing space 101.

[0064] The exhaust baffle 140 has a plurality of exhaust holes 142. The exhaust holes 142 are provided as through holes penetrating the upper and lower surfaces of the exhaust baffle 140. The exhaust holes 142 may be provided facing the up and down direction. The exhaust holes 142 are arranged to be spaced apart from each other along the circumferential direction of the exhaust baffle 140. Reaction by-products that pass through the exhaust baffle 140 are exhausted to the outside of the process chamber 60 through the exhaust holes 112 formed in the bottom surface of the housing 110 and the exhaust line 210, which will be described later.

[0065] The exhaust unit 200 exhausts impurities, such as process gases and / or process by-products, from the processing space 101 to the outside. The exhaust unit 200 may exhaust impurities and particles generated during processing of a substrate (W) to the outside of the process chamber 60. The exhaust unit 200 may include an exhaust line 210 and a pressure reducing member 220.

[0066] The exhaust line 210 functions as a passage through which reaction by-products remaining in the processing space 101 are exhausted to the outside of the process chamber 60. One end of the exhaust line 210 is connected to an exhaust hole 112 formed in the bottom surface of the housing 110. The other end of the exhaust line 210 is connected to a pressure reducing member 220 that provides negative pressure.

[0067] The decompression member 220 provides a negative pressure to the processing space 101. The decompression member 220 can exhaust process by-products, process gas, plasma, etc. remaining in the processing space 101 to the outside of the housing 110. In addition, the decompression member 220 can adjust the pressure in the processing space 101 so that the pressure in the processing space 101 is maintained at a preset pressure. The decompression member 220 can be a pump. However, the present invention is not limited thereto, and the decompression member 220 can be provided by modifying it in various ways using a known device that provides a negative pressure.

[0068] The plasma generating unit 300 may be located on the upper part of the process processing unit 100. Also, the plasma generating unit 300 may be located on the upper part of the diffusion unit 400 described below. The process processing unit 100, the diffusion unit 400, and the plasma generating unit 300 may be sequentially arranged from the ground along the third direction 13. The plasma generating unit 300 may be separated from the housing 110 and the diffusion unit 400. A sealing member (not shown) may be provided at a position where the plasma generating unit 300 and the diffusion unit 400 are combined.

[0069] The plasma generating part 300 may include a plasma chamber 310 , a gas supply unit 320 , and a plasma generating unit 330 .

[0070] The plasma chamber 310 has a discharge space 301 therein. The discharge space 301 functions as a space in which a process gas supplied from a gas supply unit 320 described later is excited to form plasma. The plasma chamber 310 may have a shape with an open top and bottom. In one example, the plasma chamber 310 may have a cylindrical shape with an open top and bottom. The plasma chamber 310 may be made of a ceramic material or a material containing aluminum oxide (Al2O3). The upper end of the plasma chamber 310 is sealed by a gas supply port 315. The gas supply port 315 is connected to a gas supply pipe 322 described later. The lower end of the plasma chamber 310 may be connected to the upper end of a diffusion chamber 410 described later.

[0071] The gas supply unit 320 supplies a process gas to the gas supply port 315. The gas supply unit 320 supplies a process gas to the discharge space 301 through the gas supply port 315. The process gas supplied to the discharge space 301 may be uniformly distributed in the processing space 101 through a diffusion space 401 and a baffle hole 132, which will be described later.

[0072] The gas supply unit 320 may include a gas supply pipe 322 and a gas supply source 324. One end of the gas supply pipe 322 is connected to the gas supply port 315, and the other end of the gas supply pipe 322 is connected to the gas supply source 324. The gas supply source 324 functions as a source for storing and / or supplying a process gas. The process gas stored and / or supplied by the gas supply source 324 may be a gas for plasma generation. In one example, the process gas may include difluoromethane (CH2F2), nitrogen (N2), and / or oxygen (O2). Optionally, the process gas may further include carbon tetrafluoride (CF4), fluorine, and / or hydrogen.

[0073] Figure 3 is a perspective view showing a schematic of a plasma generating unit according to an embodiment of Figure 2. Figure 4 is a perspective view showing a schematic of a shield unit according to an embodiment of Figure 2. Figure 5 is a view showing a schematic of a first connecting member according to an embodiment of Figure 2. Figure 6 is a view showing a schematic of a state in which the first connecting member and the first shield member of Figure 2 are in contact with each other. Hereinafter, a plasma generating unit according to an embodiment of the present invention will be described in detail with reference to Figures 2 to 6.

[0074] The plasma generating unit 330 excites the process gas supplied from the gas supply unit 320 to generate plasma in the discharge space 301. The plasma generating unit 330 applies high frequency power to an antenna 340 (described later) to excite the process gas supplied to the discharge space 301. The plasma generating unit 330 may include an antenna 340, a power supply module 350, a shield unit 360, and a connection unit 370. The antenna 340 and the power supply module 350 may function as a plasma source that generates plasma in the discharge space 301.

[0075] The antenna 340 may be an inductively coupled plasma (ICP) antenna. The antenna 340 may be formed of a coil wound around the shield unit 360 (described later) multiple times outside the plasma chamber 310. The coil may surround the outer surface of the shield unit 360. The coil may be wound around the outside of the plasma chamber 310 multiple times in a spiral shape. The coil may be wound around the shield unit 360 in a region corresponding to the discharge space 301. For example, the coil may have a vertical length corresponding to the length from the upper end to the lower end of the shield unit 360. For example, one end of the coil may be provided at a height corresponding to the upper region of the shield unit 360 when viewed from the front cross section of the plasma chamber 310. Also, the other end of the coil may be provided at a height corresponding to the lower region of the shield unit 360 when viewed from the front cross section of the plasma chamber 310.

[0076] The antenna 340 may be formed with a power terminal 345 and a ground terminal 346. A power source 351, which will be described later, may be connected to the power terminal 345. High frequency power supplied from the power source 351 may be applied to the antenna 340 through the power terminal 345. The ground terminal 346 may ground the antenna 340.

[0077] According to an example, the power terminal 345 may be formed at an upper end of the antenna 340. Also, the ground terminal 346 may be formed at a lower end of the antenna 340. However, without being limited thereto, the power terminal 345 and the ground terminal 346 may be formed at various positions of the antenna 340. For example, the power terminal 345 formed on the antenna 340 may be formed at a central support point of the antenna 340, and the ground terminals 346 formed on the antenna 340 may be formed at both ends of the antenna 340.

[0078] In the above example, for convenience of explanation, the coil provided in the antenna 340 is a single coil that surrounds the outside of the plasma chamber 310, and the antenna 340 is formed with a power terminal 345 and a ground terminal 346, but this is not limited to the above example.

[0079] For example, the antenna 340 according to an embodiment of the present invention may be provided with a plurality of coils. Each of the plurality of coils may be provided to surround the outside of the plasma chamber 310 in a spiral shape. For example, each of the plurality of coils may surround the upper and lower sides of the plasma chamber 310 independently. Also, each of the plurality of coils may be independently provided with a power terminal 345 and a ground terminal 346. The magnitude of high frequency power applied to each of the plurality of coils may be different. Thus, the magnitude of plasma generated in the plasma chamber 310 may be different.

[0080] The power supply module 350 may include a power supply 351, a power switch (not shown), and a matching box 352. The power supply 351 applies power to the antenna 340. The power supply 351 may apply high frequency power to the antenna 340. Power may be applied to the antenna 340 by turning on / off a power switch (not shown). The high frequency power applied to the antenna 340 generates a high frequency current. The high frequency current applied to the antenna 340 may form an induced electric field in the discharge space 301. The process gas supplied to the discharge space 301 may obtain energy required for ionization from the induced electric field and be excited into a plasma state.

[0081] The matching unit 352 can perform matching for the high frequency power applied from the power source 351 to the antenna 340. The matching unit 352 is connected to the output end of the power source 351 and can match the output impedance and input impedance of the power source 351 side.

[0082] The power supply module 350 according to an embodiment of the present invention has been described above as including a power supply 351, a power switch (not shown), and a matching device 352, but is not limited thereto. The power supply module 350 according to an embodiment of the present invention may further include a capacitor (not shown). The capacitor (not shown) may be a variable element. The capacitor (not shown) may be provided as a variable capacitor whose capacitance is changeable. Alternatively, the capacitor (not shown) may be provided as a fixed capacitor whose capacitance is fixed.

[0083] The shield unit 360 may be a Faraday shield. The shield unit 360 is disposed between the plasma chamber 310 and the antenna 340. The shield unit 360 may surround the outside of the plasma chamber 310. The shield unit 360 may surround the outer wall of the plasma chamber 310. The shield unit 360 may be generally cylindrical. Also, the shield unit 360 may have a ring shape when viewed from above. The vertical length of the shield unit 360 may correspond to the vertical length of the antenna 340. Alternatively, the vertical length of the shield unit 360 may be greater than the vertical length of the antenna 340. The shield unit 360 may have a slot formed in the vertical direction. A plurality of slots may be provided in the shield unit 360, and the plurality of slots may be disposed to be spaced apart along the circumferential direction of the shield unit 360.

[0084] The shield unit 360 may be made of a material including metal. A plurality of shield units 360 may be provided. According to an example, as shown in FIG. 3 and FIG. 4, the shield unit 360 may include a first shield member 361 and a second shield member 362. The first shield member 361 and the second shield member 362 may be electrically isolated from each other. The first shield member 361 may surround one side of the plasma chamber 310 along the circumferential direction of the plasma chamber 310. For example, the first shield member 361 may surround an outer wall of the plasma chamber 310 corresponding to the left side of an imaginary line passing through the center of the plasma chamber 310 when viewed from above.

[0085] 4, the second shield member 362 may surround one side of the plasma chamber 310 surrounded by the first shield member 361. The second shield member 362 may surround an outer wall of the plasma chamber 310 that corresponds to the right side of an imaginary line passing through the center of the plasma chamber 310 when viewed from above. The first shield member 361 and the second shield member 362 may be combined with each other to surround the outer wall of the plasma chamber 310.

[0086] The connection unit 370 electrically connects the antenna 340 and the shield unit 360. The connection unit 370 may be in physical contact with the antenna 340. Also, the connection unit 370 may be in physical contact with the shield unit 360. The connection unit 370 may be provided using a material including a metal. For example, the connection unit 370 may be provided using a material including copper, silver, aluminum, tungsten, or silver, which has high electrical conductivity. Alternatively, the connection unit 370 may be provided with a surface coated with a material having high electrical conductivity. A plurality of connection units 370 may be provided. The connection unit 370 according to an embodiment of the present invention may include a first connection member 371 and a second connection member 375.

[0087] The first connection member 371 may electrically connect a first fulcrum of the antenna 340 and the first shield member 361. The first fulcrum may be located in an upper region of the antenna 340. For example, the first fulcrum may refer to a fulcrum adjacent to the fulcrum where the power terminal 345 is formed.

[0088] The second connecting member 375 may electrically connect the second supporting point of the antenna 340 and the second shield member 362. The second supporting point may be located in a middle region of the antenna 340. For example, the second supporting point may be located at a middle supporting point of the antenna 340 where the power terminal 345 is formed. In one example, the second supporting point may be located midway between one supporting point of the antenna 340 where the power terminal 345 is formed and another supporting point of the antenna 340 where the ground terminal 346 is formed.

[0089] In this regard, the distance from the power terminal 345 to the first fulcrum and the distance from the power terminal 345 to the second fulcrum may be provided differently. The distance from the power terminal 345 to the first fulcrum may be provided smaller than the distance from the power terminal 345 to the second fulcrum. According to one example, the distance from the power terminal 345 to the first fulcrum may converge to 0, and the distance from the power terminal 345 to the second fulcrum may converge to half (L / 2) of the total length (L) of the coil provided in the antenna 340.

[0090] The first connecting member 371 and the second connecting member 375 may be provided to have a similar structure to each other, and therefore, in order to avoid duplication, the following description will focus on the first connecting member 371.

[0091] As shown in FIG. 5, the first connecting member 371 may be composed of a first connecting part 372 and a second connecting part 373. The first connecting part 372 may be provided at a portion that contacts the antenna 340. The first connecting part 372 may contact a coil provided to the antenna 340. The first connecting part 372 may be formed in a shape that surrounds the outer surface of the antenna 340. As shown in FIG. 6, the first connecting part 372 may be in surface contact with the antenna 340. Thus, the first connecting part 372 may be electrically connected to the antenna 340. The first connecting part 372 may be provided to be able to slide along the outer surface of the antenna 340. The first connecting part 372 may slide along the outer surface of the antenna 340, thereby moving along the length direction of the antenna 340.

[0092] In one example, when the coil provided in the antenna 340 has a rectangular cross section, the first connector 372 may be provided in a rectangular shape. However, without being limited thereto, when the coil provided in the antenna 340 has a circular cross section, the first connector 372 may be provided in a circular shape.

[0093] The second connecting part 373 extends from the first connecting part 372. The second connecting part 373 extends from the first connecting part 372 and may be formed to have a curvature in a direction toward the first connecting part 372. As shown in FIG. 6, the second connecting part 373 is formed to have a curvature, so that the second connecting part 373 can be in point contact with the first shielding member 361. Thus, the second connecting part 373 can be electrically connected to the first shielding member 361. The second connecting part 373 may be made of a material having elasticity. For example, the second connecting part 373 may be made of a material having a relatively larger elasticity than the first connecting part 372. Thus, the second connecting part 373 can more efficiently contact the antenna 340 and the shielding unit 360.

[0094] Hereinafter, a detailed description will be given of the mechanism of change in intensity of plasma generated in the discharge space 301 inside the plasma chamber 310 according to the fulcrum at which the connecting unit 370 is connected to the shield unit 360. For ease of explanation, hereinafter, a region of the discharge space 301 inside the plasma chamber 310 corresponding to a region where the first shield member 361 is installed is defined as region A, and a region of the discharge space 301 inside the plasma chamber 310 corresponding to a region where the second shield member 362 is installed is defined as region B.

[0095] 7 is a diagram showing a schematic view of the plasma chamber of FIG. 2 viewed from above. Referring to FIG. 7, a first shield member 361 and an antenna 340 may be electrically connected by a first connection member 371 provided at a position adjacent to a power terminal 345. A first high frequency voltage (V1) may be applied to the first shield member 361 electrically connected by the first connection member 371. In addition, a second shield member 362 and an antenna 340 may be electrically connected by a second connection member 375 provided at a midpoint between the power terminal 345 and a ground terminal 346. A second high frequency voltage (V2) may be applied to the second shield member 362 electrically connected by the second connection member 375.

[0096] The first high frequency voltage (V1) applied to the first shield member 361 is greater than the second high frequency voltage (V2) applied to the second shield member 362. For example, the first high frequency voltage (V1) may have a magnitude corresponding to the high frequency voltage applied to the power terminal 345. While the high frequency voltage applied to the power terminal 345 flows toward the ground terminal 346 along the length direction of the antenna 340, a voltage loss occurs. Since the second connecting member 375 is located at an intermediate fulcrum between the power terminal 345 and the ground terminal 346, the second high frequency voltage (V2) may have approximately half the magnitude of the high frequency voltage applied from the power terminal 345. That is, the second high frequency voltage (V2) may have half the magnitude of the first high frequency voltage (V1).

[0097] The first high frequency voltage (V1) applied to the first shield member 361 can generate a first plasma having a first magnitude in the area A of the discharge space 301. Also, the second high frequency voltage (V2) applied to the second shield member 362 can generate a second plasma having a second magnitude in the area B of the discharge space 301. Thus, the intensity of the plasma generated in the area A can be made greater than the intensity of the plasma generated in the area B.

[0098] Also, the connecting unit 370 according to an embodiment of the present invention may be provided to be slidably movable along the length direction of the antenna 340. For example, when it is desired to reduce the magnitude of the voltage applied to the first shielding member 361, the first connecting member 371 may be moved away from the power terminal 345. When it is desired to increase the magnitude of the voltage applied to the second shielding member 362, the second connecting member 375 may be moved closer to the power terminal 345. In addition, the position where the connecting unit 370 is provided may be changed in various ways to adjust the magnitude of the voltage applied to the shielding unit 360, thereby appropriately changing the strength of the electric field transmitted to the discharge space 301.

[0099] In general, when a shielding member is provided for a plasma generating member, the shielding member can shield the inside of a chamber where plasma is generated. However, since the shielding member reduces the strength of an electric field applied to the inner space of the chamber in the initial stage of plasma generation, a phenomenon that the discharge efficiency of the initial plasma decreases may occur.

[0100] According to the embodiment of the present invention, a plurality of shield units 360 are provided, and each shield unit 360 and antenna 340 can be electrically connected by independently contacting each other using a plurality of connection units 370. Accordingly, the discharge space 301 inside the plasma chamber 310 can be divided to adjust the strength of the electric field applied to each discharge space 301. In addition, the shield unit 360 can apply the high frequency power applied to the antenna 340 to improve the discharge efficiency of the initial plasma generated inside the discharge space 301. In addition, after the plasma is generated in the discharge space 301, the shield unit 360 to which the high frequency voltages of different magnitudes are applied can adjust the voltage of the sheath inside the discharge space 301. Accordingly, the magnitude of the ion energy applied to the discharge space 301 can be appropriately adjusted. As a result, the etching action occurring on the inner surface of the plasma chamber 310 and the deposition of reaction by-products deposited on the inner surface of the plasma chamber 310 can be minimized.

[0101] In the above-described embodiment of the present invention, the shield unit 360 includes the first shield member 361 and the second shield member 362, but is not limited thereto. For example, the shield unit 360 may be provided as a natural number of shield members equal to or greater than three and provided to surround the outer surface of the plasma chamber 310. Also, although the shield unit 360 is provided in a plurality of units, a single shield unit 360 may be provided to surround the outer surface of the plasma chamber 310.

[0102] 2 again, the diffusion unit 400 can diffuse the plasma generated in the plasma generating unit 300 into the processing space 101. The diffusion unit 400 can include a diffusion chamber 410. The diffusion chamber 410 has a diffusion space 401 therein. The diffusion space 401 can diffuse the plasma generated in the discharge space 301. The diffusion space 401 connects the processing space 101 and the discharge space 301 to each other, and functions as a passage for allowing the plasma generated in the discharge space 301 to flow into the processing space 101.

[0103] The diffusion chamber 410 may be generally in an inverted funnel shape. The diffusion chamber 410 may have a shape in which the diameter increases from the upper end to the lower end. The inner circumferential surface of the diffusion chamber 410 may be made of a non-conductive material. For example, the inner circumferential surface of the diffusion chamber 410 may be made of a material including quartz.

[0104] The diffusion chamber 410 is located between the housing 110 and the plasma chamber 310. An upper end of the diffusion chamber 410 may be connected to a lower end of the plasma chamber 310. A sealing member (not shown) may be provided between the upper end of the diffusion chamber 410 and the lower end of the plasma chamber 310.

[0105] The shield unit and the connection unit according to an embodiment of the present invention described below are provided similarly to the shield unit and the connection unit described with reference to Figures 2 to 7 unless otherwise described, and therefore, the following description of overlapping content will be omitted.

[0106] 8 and 9 are perspective views showing another embodiment of the shield unit of FIG. 2. Referring to FIG. 8, the shield unit 360 may surround the outer surface of the plasma chamber 310. A plurality of shield units 360 may be provided. For example, the shield unit 360 may be divided into three parts along the circumference of the plasma chamber 310. The shield unit 360 may include a first shield member 361, a second shield member 362, and a third shield member 363. The first shield member 361, the second shield member 362, and the third shield member 363 may be electrically separated from each other. Although not shown, the first shield member 361 may be electrically connected to the first connection member 371, the second shield member 362 may be electrically connected to the second shield member 362, and the third connection member 376 may be electrically connected to the second shield member 362. When the shield unit 360 is divided into three parts as shown in FIG. 8, the initial discharge efficiency of plasma in the discharge space 301 may be further improved. Also, the etching and deposition processes within the discharge space 301 can be more precisely controlled.

[0107] Referring to FIG. 9, a plurality of shield units 360 may be provided. For example, the shield unit 360 may be divided into two in the upper and lower directions of the plasma chamber 310. The shield unit 360 may include a first shield member 361 and a second shield member 362. The first shield member 361 may surround the outer surface of the plasma chamber 310 in a region corresponding to the upper region of the plasma chamber 310. The second shield member 362 may surround the outer surface of the plasma chamber 310 in a region corresponding to the lower region of the plasma chamber 310. The first shield member 361 and the second shield member 362 may be electrically separated from each other. In addition, a first connection member 371 may be electrically connected to the first shield member 361, and a second connection member 375 may be electrically connected to the second shield member 362. When the shield unit 360 is divided in the upper and lower directions as shown in FIG. 9, the initial discharge efficiency and the etching and deposition actions in the upper and lower regions of the discharge space 301 may be controlled.

[0108] Figures 10 and 11 are views showing a schematic diagram of another embodiment of the connection unit of Figure 2. Referring to Figure 10, a connection unit 370 may include a first connection member 371 and a second connection member 375. As described above, the second connection member 375 is generally provided with a similar structure to the first connection member 371, so the following description will focus on the first connection member 371.

[0109] The first connecting member 371 may further include an elastic member 374. The elastic member 374 may be made of a material having a large elasticity. For example, the elastic member 374 may be made of a spring. The elastic member 374 may be disposed between the first connecting part 372 and the second connecting part 373. According to an example, as shown in FIG. 9, one end of the elastic member 374 may be coupled to one fulcrum of the second connecting part 373 where the second connecting part 373 and the first shielding member 361 make point contact. The other end of the elastic member 374 may be coupled to another fulcrum of the first connecting part 372 that matches the one fulcrum of the second connecting part 373. The elastic member 374 is provided between the first connecting part 372 and the second connecting part 373, so that the antenna 340 and the shielding unit 360 can be efficiently connected to each other. In addition, the elastic member 374 allows the connecting unit 370 to easily slide along the length direction of the antenna 340.

[0110] 11, the second connecting portion 373 extends from the first connecting portion 372. The second connecting portion 373 generally has a length of

[0111]

number

[0112] The vertically extending portion of the second connecting portion 373 may be in surface contact with the shield unit 360. Optionally, the second connecting portion 373 may be extended from the first connecting portion 372, but generally may be in the shape of

[0113]

number

[0114] The first connecting portion 372 of the connecting unit 370 is provided to be in surface contact with the coating provided on the antenna 340, and the second connecting portion 373 is provided to be in surface contact with the shield unit 360, so that the voltage can be applied from the antenna 340 to the shield unit 360 more efficiently.

[0115] Figure 12 is a diagram illustrating another embodiment of the process chamber of Figure 1. Figure 13 is a diagram illustrating a top view of the shield unit of Figure 12. Referring to Figures 12 and 13, the process chamber 60 may include a housing 500, a window unit 520, a gas supply unit 320, and a plasma generating unit 330.

[0116] The housing 500 may have a lower space and an upper space in which the substrate (W) is processed. The housing 500 may include a lower body 510 and an upper body 530. The lower body 510 may have a space with an open top inside. The lower body 510 may be combined with a window unit 520 described below to have a lower space in which the substrate (W) is processed inside. The support unit 120 and the exhaust baffle 140 may be located in the lower space. The configuration of the support unit 120 and the exhaust baffle 140 according to an embodiment of the present invention is similar to the configuration of the support unit 120 and the exhaust baffle 140 described in FIG. 2, so a description thereof will be omitted.

[0117] The upper body 530 may have an internal space with an open lower surface. The upper body 530 may be combined with the window unit 520 to have an upper space in which the plasma generating unit 330 is disposed.

[0118] The window unit 520 may include a dielectric window. The window unit 520 may cover the open upper surface of the lower body 510. An opening may be formed in the window unit 520. The gas supply unit 320 may be disposed in the opening formed in the window unit 520. The gas supply unit 320 may be provided in a similar manner to the gas supply unit 320 described in FIG.

[0119] The plasma generating unit 330 may be located in the upper space. The antenna 340 may be provided as a planar antenna in the upper space. The antenna 340 may be formed in a spiral shape. The antenna 340 according to an embodiment of the present invention is similar to the antenna 340 described in FIG. 2 except that it is provided as a planar antenna, so a description thereof will be omitted.

[0120] The shield unit 360 may be located in the upper space. The shield unit 360 may be disposed between the antenna 340 and the window unit 520. A plurality of shield units 360 may be provided. For example, as shown in FIG. 13, the shield unit 360 may include a first shield member 361 and a second shield member 362. The first shield member 361 may be formed in an area corresponding to an area including the center of the window unit 520 when viewed from above. The second shield member 362 may be formed in an area surrounding the outside of the first shield member 361.

[0121] The first shielding member 361 and the second shielding member 362 may be electrically isolated from each other. Also, the first connecting member 371 and the second connecting member 375 may be electrically connected to the first shielding member 361 and the second shielding member 362, respectively. The mechanism for applying voltage to the first shielding member 361 and the second shielding member 362 through the first connecting member 371 and the second connecting member 375 is similar to that described above. Therefore, a detailed description thereof will be omitted to avoid duplication of content.

[0122] Fig. 14 is a diagram illustrating another embodiment of the process chamber of Fig. 13. Referring to Fig. 14, the shield unit 360 may be formed to surround one sidewall of the lower body 510. For example, the shield unit 360 may surround one sidewall of the lower body 510 corresponding to an upper region of the lower body 510. The upper region of the lower body 510 may refer to an area between the substrate (W) supported by the support unit 120 and the window unit 520. In addition, the antenna 340 may be formed to surround an outer surface of the shield unit 360 that surrounds the sidewall of the lower body 510.

[0123] The above detailed description is illustrative of the present invention. The above content shows and describes the preferred embodiment of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the inventive concept disclosed in the present specification, the scope of equivalents to the disclosed content, and / or the scope of the technology or knowledge of the art. The above-mentioned embodiment describes the best state for realizing the technical idea of ​​the present invention, and various modifications are possible as required for the specific application field and use of the present invention. Therefore, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiment. The appended claims should be construed to include other embodiments.

Claims

1. In an apparatus for processing a substrate, a process processing section for providing a processing space for processing the substrate; and The process processing unit includes a plasma generating unit that generates plasma from a process gas. The plasma generating unit is a plasma chamber in which a discharge space is formed; a shield unit surrounding the exterior of the plasma chamber; an antenna surrounding the shield unit on the outside thereof and to which high frequency power is applied; and The substrate processing apparatus further comprises a connection unit that electrically connects the shield unit and the antenna.

2. The shield unit includes: a first shield member surrounding one side of the plasma chamber along a circumferential direction of the plasma chamber; and a second shield member surrounding the plasma chamber on one side thereof and the other side thereof facing the first shield member; 2 . The substrate processing apparatus of claim 1 , wherein the first shield member and the second shield member are combined with each other to surround an outer side surface of the plasma chamber.

3. The substrate processing apparatus of claim 2 , wherein the first shield member and the second shield member are electrically isolated from each other.

4. A power terminal to which high frequency power is applied is formed at an upper end of the antenna, and a ground terminal to which ground is formed at a lower end of the antenna, The connection unit includes: a first connecting member that electrically and directly connects a first supporting point of the antenna and the first shielding member; and a second connecting member that electrically and directly connects a second supporting point of the antenna and the second shielding member; The substrate processing apparatus of claim 3 , wherein a distance from the first supporting point to the power terminal is different from a distance from the second supporting point to the power terminal.

5. the first fulcrum is located in an upper region of the antenna; The substrate processing apparatus of claim 4 , wherein the second support is located at a point in a middle region of the antenna.

6. The connection unit includes: The substrate processing apparatus according to claim 1 , wherein the antenna is provided to be movable along a longitudinal direction of the antenna.

7. The connection unit includes: A first connection portion that is in contact with the antenna; and The substrate processing apparatus of claim 6 , further comprising: a second connection portion extending from the first connection portion in a direction toward the shield unit and contacting the shield unit.

8. The first connecting portion is The substrate processing apparatus of claim 7 , wherein the antenna is provided so as to surround an outer surface of the antenna and to be slidably movable along the outer surface of the antenna.

9. The first connecting portion is in surface contact with the antenna, The substrate processing apparatus according to claim 8 , wherein the second connecting portion makes point contact with the shield unit.

10. The first connecting portion is in surface contact with the antenna, The substrate processing apparatus according to claim 8 , wherein the second connecting portion is in surface contact with the shield unit.

11. The substrate processing apparatus of claim 9 , wherein the second connecting portion is formed to have a curvature in a direction toward the first connecting portion.

12. The second connecting portion is made of a material having elasticity, The substrate processing apparatus of claim 9 , further comprising an elastic member provided between one fulcrum of the second connecting portion where the second connecting portion and the shield unit make point contact and another fulcrum of the first connecting portion that matches the one fulcrum.

13. The length of the shield unit in the vertical direction is The substrate processing apparatus of claim 1 , wherein the length of the antenna in the vertical direction corresponds to or is greater than the length of the antenna.

14. In an apparatus for processing a substrate, a chamber providing a plasma generation region; an antenna disposed in contact with the chamber, the antenna having a power terminal to which high frequency power is applied and a ground terminal to which the antenna is grounded; A shield unit disposed between the chamber and the antenna; and The substrate processing apparatus further comprises a connection unit that electrically connects the shield unit and the antenna.

15. The antenna is disposed so as to surround the outside of the chamber, The shield unit includes: a first shield member and a second shield member spaced apart from each other in a direction surrounding the chamber, The substrate processing apparatus of claim 14 , wherein the first shield member and the second shield member are electrically isolated from each other.

16. The connection unit includes: a first connecting member that connects the first shield member to a first fulcrum of the antenna; and a second connecting member that connects a second fulcrum between the second shield member and the antenna, The substrate processing apparatus of claim 15 , wherein the first and second fulcrums are different in distance from the power terminal.

17. The connection unit includes: The substrate processing apparatus according to claim 14 , wherein the antenna is provided to be movable along a longitudinal direction thereof.

18. The connection unit includes: A first connection portion that is in contact with the antenna; and The substrate processing apparatus of claim 17 , further comprising a second connection portion extending from the first connection portion in a direction toward the shield unit and contacting the shield unit.

19. The first connecting portion is a support member formed around an outer surface of the antenna and in surface contact with the antenna, the support member being provided to be slidably movable along the outer surface of the antenna; The second connecting portion is The substrate processing apparatus of claim 18 , wherein the shield unit is formed to have a curvature in a direction toward the first connecting portion and is in point contact with the shield unit.

20. The second connecting portion is made of a material having elasticity, The substrate processing apparatus of claim 19 , further comprising an elastic member provided between one fulcrum of the second connecting portion where the second connecting portion and the shield unit make point contact and another fulcrum of the first connecting portion that matches the one fulcrum.

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