Semiconductor laser with radiation inducer

Abstract

A semiconductor laser (1) is specified, in which a radiation directing element (3) arranged on a laser diode (2) comprises or consists of a material that can be provided by laser radiation (5) on the laser diode (2). Also specified is a radiation transmission element (8), more specifically a radiation exit window (8a) for the semiconductor laser (1), in which one or more optical elements (31) comprising a corresponding material are arranged on a base element (80). Furthermore, a laser housing (9) having said radiation exit window (8a) and a corresponding manufacturing method are specified.

Description

[Technical field]

[0001] The present invention relates to a semiconductor laser with a radiation directing element, more particularly an optical element or light guide, and a corresponding manufacturing method, and also to a radiation transmitting element, more particularly a radiation exit window for a laser housing with at least one optical element, and a corresponding manufacturing method. Summary of the Invention [Problem to be solved by the invention]

[0002] It is an object to specify a semiconductor laser which can be efficiently encapsulated and manufactured. It is further an object to specify a semiconductor laser with a self-adjusting radiation directing element, more particularly an optical element or light guide. It is further an object to specify a corresponding radiation transmitting element, more particularly a radiation exit window for a laser housing. These objects are achieved by an apparatus and a manufacturing method with the features of the independent claims. Further advantageous configurations correspond to the dependent claims. [Means for solving the problem]

[0003] According to one embodiment, the semiconductor laser comprises a laser diode. The laser diode has an active region for generating laser radiation and a radiation exit area where the laser radiation can be emitted from the laser diode. The semiconductor laser also comprises a radiation inducing element. The radiation inducing element is arranged at the radiation exit area on the laser diode and monolithically connected to the laser diode. The radiation inducing element comprises or consists of a material that can be provided by laser radiation on the laser diode. More preferably, the radiation inducing element is arranged at the radiation exit area directly on the laser diode (without intermediate layers) or directly on the dielectric mirror.

[0004] Thus, by manipulating the laser diode to provide the radiation inductive element, the radiation inductive element can be provided in a self-aligned manner precisely over the beam exit area.

[0005] The radiation inducing element is preferably stable to laser radiation ("radiation stable") and does not degrade or does not substantially degrade under operating conditions within the typical total operating time of the semiconductor laser.

[0006] The laser diode can in principle be any semiconductor laser diode.

[0007] Due to the especially high power densities, an effect known as the optical tweezing effect is particularly pronounced in edge-emitting semiconductor laser diodes. In this case, as a result of the high power density, organic and inorganic dirt and compounds are picked up from the surrounding air and deposited on the laser facet. Due to the high energy density in the area of ​​the laser facet, decomposition, deposition and accumulation of particles and decomposition products occur at the facet. In this case, interactions with the emitted radiation occur, which lead to further heating of the facet. As a result of the above relationship, self-reinforcement effects occur, which can eventually lead to the destruction of the laser (COD, catastrophic optical damage).

[0008] According to one embodiment, the radiation directing element is configured as a protection element to reduce the above-mentioned effects, i.e. it may be configured to allow the operation of the semiconductor laser in normal air. For this purpose, it may have a certain minimum thickness. However, it may also be a coupling element, bridging the distance between the laser and the radiation coupling element, as will be explained in more detail later.

[0009] The laser diode is therefore preferably an edge-emitting laser diode, in which case the radiation exit area is the area of ​​the laser facet, which means that the radiation directing element is arranged in the radiation exit area on the laser facet, preferably directly on the laser facet, and is monolithically connected to the laser facet.

[0010] However, as mentioned above, the diode may in principle be any desired semiconductor laser diode, more particularly a vertical cavity surface emitting laser (VCSEL) or a photonic crystal surface emitting laser (PCSEL). In the case of a VCSEL, the radiation directing element may be provided, preferably directly, on a distributed Bragg reflector through which the laser radiation emits in operation, or preferably directly on a substrate through which the laser radiation emits in operation. In the case of a PCSEL, the radiation directing element may be provided, preferably directly, on the photonic crystal of the PCSEL.

[0011] Said material may in particular be an inorganic material, which may comprise or consist of silicon, aluminium, tantalum, titanium or hafnium.

[0012] Such materials include, for example, silicon dioxide (SiO 2, Aluminum oxide Al2O3, Tantalum oxide TaO, Tantalum dioxide TaO2, Titanium dioxide Ta2O 5, Titanium dioxide TiO 2, It may be a dielectric material such as hafnium HfO2. In experiments, silicon dioxide SiO2 has given particularly good results.

[0013] The radiation directing element can be configured as a radiation coupling element, i.e. it has a radiation coupling surface that is not connected to other optical elements and through which radiation can be fed into the atmosphere.

[0014] The radiation coupling element may be configured to shape the laser radiation (hereinafter referred to as "optical element"), in particular as a refractive lens.

[0015] The lens may be configured to spread the radiation by lensing effect, allowing the semiconductor laser to operate in normal atmosphere, or the radiation coupling element may allow self-adjusting focusing of the laser beam to achieve an optimized beam profile.

[0016] Alternatively, in addition to the radiation directing element, a radiation coupling element may be provided which is monolithically connected to the radiation directing element. In this case, the radiation directing element may constitute a coupling element (i.e. a light guide) which directs the laser radiation from the laser diode to the radiation coupling element. In this embodiment, the beam combining element may also be configured to shape the laser radiation. The beam combining element may be any desired lens, more particularly a refractive lens, or a prism which changes the propagation direction of the laser radiation.

[0017] In this case, the radiation coupling element may be located after the radiation directing element along the beam path of the laser radiation that can be generated by the semiconductor laser. This means that the laser radiation generated when the laser diode is active first passes through the radiation directing element and then through the radiation coupling element. The semiconductor laser may further comprise a support on which the semiconductor laser and optionally the radiation coupling element are arranged. That is to say, the laser and optionally the radiation coupling element may be mounted on it.

[0018] According to one embodiment, the semiconductor laser comprises multiple laser diodes. Similarly, each laser diode may have multiple emission points. For example, the semiconductor laser may comprise an edge emitter or a VCSEL array with multiple laser ridges (laser bars).

[0019] If a plurality of laser diodes and / or laser diodes with a plurality of emission points are provided, then it is preferred that a plurality of the above-mentioned radiation guiding elements are also provided, and it is also preferred that the laser diodes have exactly the same number of radiation guiding elements as emission points.

[0020] The laser diode may be configured to emit light in the visible spectral range, more particularly in the blue spectral range.The above-mentioned semiconductor lasers are preferably used in automotive head-up displays or as beam sources in laser projectors.

[0021] In the method for manufacturing the semiconductor laser, step S1 provides a laser diode having an active region for generating laser radiation and a radiation exit region, and step S2 provides a radiation inducing element for the laser diode in the radiation exit region. Step S2 includes a sub-step (S ) of exposing the laser diode to the atmosphere and a precursor, e.g., a metal organyl, capable of inducing a chemical reaction by the laser radiation, and optionally a nitrogen and / or oxygen donor. 2a Step S2 also includes a step S3 of operating the laser diode to induce a chemical reaction and convert the precursor into a material that monolithically forms a radiation inducing element within a radiation exit area on the laser diode. 2b The optional addition of oxygen can prevent carbon deposition on the facets.

[0022] As mentioned above, the laser diode may be an edge-emitting laser diode. In that case, the radiation exit area is the laser facet and the radiation directing element is preferably arranged directly on the laser facet. Furthermore, the laser diode may be a VCSEL or a PCSEL. The radiation directing element is preferably radiation stable, more preferably a protective element, and preferably allows operation of the semiconductor laser in normal air.

[0023] The precursor may in particular be an inorganic precursor. Correspondingly, the substance may be an inorganic substance. The precursor may comprise or consist of silicon, aluminum, tantalum, hafnium or titanium. Correspondingly, the substance may comprise or consist of silicon, aluminum, tantalum, hafnium or titanium.

[0024] In the experiments, SiO2 gave particularly good results. Here, volatile silicon (Si x H y C z ), e.g. silane (Si x H 2x) is used as a precursor. By reacting with oxygen O2 in the air, silicon dioxide SiO2 is produced. S x H y C z + O 2 -> SiO 2 + H2O (+ stable Si x-o H y-m C z-n ) The Si here may be replaced by other metals providing the refractive index of the oxide formed is suitable.

[0025] As mentioned above, the radiation inductive element may be configured as a radiation coupling element, in which case it is suitable for forming a laser radiation, or, as mentioned above, in addition to the radiation inductive element, a radiation coupling element may be provided which is monolithically connected to the radiation inductive element.

[0026] The corresponding manufacturing method further comprises a step S of providing a radiative coupling element. 1a and a step S of positioning the radiation coupling element relative to the laser diode such that laser radiation is transmitted through the radiation coupling element during operation of the laser diode. 1b Therefore, the subsequent step S 2a In step S, both the laser diode and the radiation coupling element are exposed to the precursor and the atmosphere. 2b In this case, during operation of the laser diode, a radiation inductive element is formed on the laser diode within the radiation exit area so as to monolithically connect the laser diode to the radiation inductive element.

[0027] As mentioned above, the semiconductor laser may further comprise a support on which the semiconductor laser and optionally the radiation coupling element are arranged. As mentioned above, the semiconductor laser may have multiple laser diodes, in which case multiple radiation directing elements may occur. The laser diodes may be configured to emit light in the visible spectral range, more particularly in the blue spectral range. The above-mentioned semiconductor laser is preferably used in a head-up display of an automobile or as a beam source in a laser projector.

[0028] According to one embodiment, a radiation transmission element, more particularly a radiation exit window for a laser housing, comprises a base element, more particularly a radiation exit window base element, and one or more optical elements arranged on and monolithically connected to the base element, again the optical elements comprising or consisting of a material that can be provided on the base element by laser radiation.

[0029] The base element may in particular be a radiation exit window base element, in which case it may preferably be a planar or substantially planar sheet transparent to the laser radiation.

[0030] Similar to the semiconductor laser with radiation directing element discussed above, the optical element may be produced in a self-aligned manner on the base element by manipulating a laser diode to provide one or more optical elements.

[0031] The optical element is configured to shape the laser radiation. The element may be a refractive lens. The lens may be configured to spread the laser radiation by lensing. The material may be any of the materials mentioned above, more specifically silicon dioxide.

[0032] According to one embodiment, the optoelectronic device includes one or more semiconductor laser diodes, each having an active region for generating laser radiation and a hermetic laser housing in which the semiconductor laser diode is arranged. The radiation exit window is a part of the hermetic laser housing. The laser diodes are arranged relative to the radiation exit window such that each laser diode corresponds to one of the optical elements through which the laser radiation of the respective laser diode can be emitted in an operative state.

[0033] The laser diode may be one of the types mentioned above, for example an edge-emitting laser diode or a VCSEL array, but is preferred for use as a beam source in a head-up display or laser projector.

[0034] In a method for producing a corresponding radiation-transmitting element, more specifically a radiation exit window, first the radiation-transmitting element is subjected to step S 21 Then, step S 22 In step S , the optical element or elements are provided on a radiation-transmitting element, which is first exposed to a precursor that can be induced to react chemically with the laser radiation and to the atmosphere (step S ). 22a Laser radiation is then generated and a chemical reaction is induced by the laser radiation to convert the precursor into a material that forms an optical element monolithically on the radiation-transmitting element (step S 22b ).

[0035] In a method for manufacturing an optoelectronic device, first, at least one semiconductor laser diode having an active region for generating laser radiation is provided (step S 31 ). Also, the radiation exit window base element (step S 32 A sealed laser housing having a base element is also provided. The laser diode is then placed in the laser housing such that, in an operational state, the laser radiation of the laser diode can exit through the radiation exit window base element (step S 33). Step S 34 The placement of the optical element on the radiation exit window base element in step S 34a In step S, the radiation exit window base element is exposed to a precursor capable of being induced to react chemically with the laser radiation and to the atmosphere. 34b This is done by operating the laser diode such that a chemical reaction is induced and a precursor is converted into a material that forms at least one optical element monolithically on the radiation exit window base element.

[0036] Step S 34a In the present invention, the interior of the laser housing is preferably kept precursor-free.

[0037] In particular, the at least one laser diode may be one of the types mentioned above. The material may be a material as mentioned above, more particularly silicon dioxide, in which case the precursor may be a volatile silicone.

[0038] The invention will now be explained in more detail with reference to the accompanying schematic drawings. [Brief description of the drawings]

[0039] [Figure 1] 1 is a diagram illustrating a semiconductor laser according to a first embodiment. [Diagram 2] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor laser according to the first embodiment. [Diagram 3] FIG. 4 is a diagram showing a semiconductor laser according to a second embodiment. [Figure 4] FIG. 13 is a diagram illustrating a semiconductor laser according to a third embodiment. [Diagram 5] 5A to 5C are diagrams illustrating a method for manufacturing the semiconductor laser according to the second and third embodiments. [Figure 6] FIG. 2 shows a radiation exit window according to an embodiment. [Figure 7] 7A to 7C are diagrams illustrating a method for manufacturing the radiation exit window according to the embodiment shown in FIG. [Figure 8]FIG. 2 illustrates a sealed laser housing according to an embodiment. [Figure 9] 9A-9C illustrate a method for manufacturing a hermetically sealed laser housing according to the embodiment of FIG. 8.

[0040] FIG. 1 shows a semiconductor laser 1 according to a first embodiment. The semiconductor laser 1 comprises a semiconductor laser diode 2 arranged on a support 4. Between the support 4 and the semiconductor laser diode 2 in this embodiment, a submount (assembly element) 42 is provided, which is connected to the laser diode 2 and to the support 4 by solders 40, 41 (here solder layers). The laser diode 2 has an active area 20 which generates laser radiation 5 when a suitable voltage is applied. The laser radiation 5 leaves the laser diode 2 via a radiation exit area 22. Here, the laser diode 2 is an edge-emitting laser diode. The radiation exit area 22 is therefore the area of ​​the laser facet 21. Within the radiation exit area 22, a radiation guide element 3 is arranged on the laser facet 21. Alternatively, the laser diode 2 may be a VCSEL or a PCSEL.

[0041] The radiation inductive element 3 comprises or consists of a material that can be provided to the laser diode 2 by laser radiation 5. The radiation inductive element 3 is an element that allows the semiconductor laser 1 to operate in normal air, i.e. a protective element.

[0042] It should be noted that here the radiation inductive element 3 is formed as a refractive lens and is therefore a radiation coupling element 30 having a radiation coupling surface by which the laser radiation 5 can be transmitted into the atmosphere.

[0043] As mentioned above, the radiation inducing element 3 comprises a material which can be provided to the laser diode 2 by laser radiation 5. The corresponding method is explained in more detail below with reference to FIG.

[0044] The method begins with step S0 "START". In step S1, a laser diode 2 is provided. Then, in step S2, a radiation inducing element 3 is provided on the laser diode 2. Step S2 includes the sub-steps S 2a and S 2b Step S 2a In step S, the laser diode 2 is exposed to the atmosphere and to a precursor that can be induced to react chemically with the laser radiation 5. 2b In step S2, the laser diode is operated to induce a chemical reaction to convert the precursor into a material that monolithically forms the radiation inducing element 3 at the radiation exit area 22 on the laser diode 2. In particular, the precursor may be a silicone hydride or a volatile silicone, and the material may be silicon dioxide. The method includes steps S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14, S15, S16, S17, S18, S19, S20, S21, S22, S23, S24, S25, S26, S27, S28, S29, S30, S31, S32, S33, S34, S35, S36, S37, S38, S49, S50, S51, S52, S53, S64, S65, S76, S86, S97, S98, S109, S110, S120, S131, S142, S153, S165, S176, S187, S198, S199, S199, S199 E If any hydrocarbons are present, they are oxidized to CO2 by reaction with oxygen and are no longer available as reactants for the process.

[0045] FIG. 3 shows a semiconductor laser 1 according to a second embodiment. The configuration is substantially the same as the first embodiment shown in FIG. 1. In the semiconductor laser 1 according to the second embodiment, the radiation inducting element 3 is not a radiation coupling element 30. That is, electromagnetic radiation is not directly emitted into the air via the radiation inducting element 3. Instead, the radiation inducting element 3 is connected to a radiation exit element 6. As a light guide, it transmits the laser radiation 5 generated in the laser diode 2 to the radiation exit element 6. The radiation exit element 6 is here a prism 60 which deflects the laser radiation 5 (in this example at a right angle, i.e. about 90°). As with the semiconductor laser diode 2, this prism is arranged on the support 4 by means of solder 41.

[0046] The laser radiation 5 emerges deflected by 90° at the top side of the prism 60. This type of arrangement can in particular be used as what are called top looker laser housings, i.e. semiconductor laser housings, in which the laser radiation 5 emerges from the top surface perpendicular to the base surface of the housing. The base surface allows the housing to be placed in contact with a support, for example a printed circuit board. In this case, the semiconductor laser 1 is placed on an assembly extending parallel to the base surface and emits the laser radiation 5 parallel to the base surface (perpendicular to the surface normal of the base surface).

[0047] Furthermore, in this embodiment, the space between the prism 60 and the semiconductor laser diode 2 or the submount 42 is filled with a filler material 7 to protect, shield and mechanically stabilize the space from contaminants.

[0048] 4 shows a semiconductor laser 1 according to a third embodiment. It has a similar configuration to the second embodiment, i.e., a radiation inducing element 3 is monolithically connected to the semiconductor laser diode 2 and the radiation coupling element 6, and serves as a light guide between these elements. However, the radiation coupling element 6 is not a prism 60 but a lens 61 (here a refractive lens).

[0049] What is common to all of the above-mentioned embodiments is that the laser radiation 5 coupled into the atmosphere via one of the radiation coupling elements 30, 6 is broadened to enable the optoelectronic device to operate in normal atmosphere (e.g., terrestrial atmosphere at 300 Kelvin).

[0050] A method for manufacturing the semiconductor laser 1 according to the second and third embodiments is shown in FIG. 5. The method begins with step S0 "START". First, in step S1, a semiconductor laser diode 2 is provided. Next, in step S 1aIn FIG. 1, the radiation coupling element 6 is arranged relative to the laser diode 2 such that, during operation of the laser diode 2, the laser radiation 5 is transmitted through the radiation exit element 6. Here, both the laser diode 2 and the radiation exit element 6 are arranged on a support 4 by means of solders 40, 41 and optionally a submount 42.

[0051] Subsequently, in step S2, a radiation guide element 3 is provided on the laser diode 2 so as to monolithically connect the laser diode 2 to the radiation coupling element 6. Step S2 includes the sub-steps S 2a and S 2b Step S 2a In step S, both the laser diode 2 and the radiation exit element 6 are exposed to the precursor and to the atmosphere. The spacing between the radiation exit element 6 and the laser diode 2 is 1b A small value is selected for , which results in a step S 2b In step S, a radiation inductive element 3 is formed in the radiation exit area 22 on the laser diode 2, and the laser diode 2 is monolithically connected to the radiation inductive element 3. E It ends with "End".

[0052] Fig. 6 shows a radiation transmission element 8 configured as a radiation exit window 8a according to an embodiment. The radiation exit window 8a comprises a base element 80 configured as a radiation exit window base element 80a. The radiation exit window base element 80a may be a flat or sheet-like element, for example a glass plate, transparent to the laser radiation 5. On the radiation exit window base element 80a a number of optical elements 31 are arranged which are monolithically connected to the radiation exit window base element 80a. These elements are refractive lenses. They consist of a material which can be provided on the radiation exit window base element 80a by the laser radiation 5.

[0053] As a result, the radiation exit window 8a of FIG. 6 can be produced particularly simply by the manufacturing method shown in FIG. 7. Here, the first step S 21 The radiation exit window base element 80a is provided. Then, step S22 In step S, the optical element is provided. 22a After exposing the radiation exit window base element 80a to the precursor 5 capable of being induced to react chemically by the laser radiation and to the atmosphere in step S 22b The optical element is provided by generating laser radiation 5 at step S20 and converting the precursor into a material that forms the optical element 31 on the radiation exit window base element 80a. E It ends with "End".

[0054] In this case, preferably only one side of the radiation exit window base element 80a is exposed to the precursor, such that the optical element 31 is formed on only one side of the radiation exit window base element 80a. The element may for example be filled with a protective gas.

[0055] 8 shows an optoelectronic device 10 with a sealed laser housing 9 with the above-mentioned radiation exit window 8a. In the sealed laser housing 9, the semiconductor laser diodes 2 are arranged on the support 4. Also provided is a prism 90 arranged inside the laser housing, so that the electromagnetic radiation 5 emitted by the semiconductor laser diodes 2 is deflected by 90 degrees and exits through the radiation exit window 8a. The laser diodes 2 are arranged relative to the radiation exit window 8a such that one of the optical elements 31 corresponds to each laser diode 2, so that the laser radiation emitted by the laser diodes 2 in the operating state exits through the corresponding optical element 31.

[0056] According to an alternative embodiment, in the case of a radiation exit window 8a according to Fig. 6 and an optoelectronic device 10 according to Fig. 8, only one optical element 31 and only one semiconductor laser diode 2 may be provided. Similarly, the laser radiation 5 of the corresponding semiconductor laser diode 2 may be split into several laser beams by a beam splitter and / or the laser diode may have several exit points. In that case, the laser diode 2 may be assigned to two or more optical elements 31 through which the laser radiation 5 exits.

[0057] During manufacture of the optoelectronic device 10, in principle an optical element 31 may be provided in the corresponding radiation exit window 8a and placed on the laser housing 9 containing the laser diode 2, submount 4 and prism 90, and aligned so that the laser radiation 5 exits through the optical element 31.

[0058] However, the optoelectronic device 10 is preferably manufactured according to the method illustrated in Figure 9. The method begins with step S0 "START". 31 Next, in step S 32 In the subsequent step S, the hermetically sealed laser housing 9 is provided with a radiation exit window base element 80a. 33 In the laser housing 9, the laser diode is arranged in such a way that in the operating state, the laser radiation 5 of the laser diode 2 can exit through the radiation exit window base element.

[0059] Continued Step S 34 In step S, the optical element 31 is provided on the radiation exit window base element 80a. 34 In the sub-step S 34a and S 34b Sub-step S 34a In substep S, the radiation exit window base element 80a is exposed to a precursor that can be induced to react chemically with the laser radiation 5 and to the atmosphere. 34b Finally, the laser diode 2 is operated and a chemical reaction is induced to convert the precursor into a material that forms the optical element 31 monolithically on the radiation exit window base element 80a. E It ends with "End".

[0060] Although the above method has been described in relation to multiple laser diodes 2, it is also possible to use a single laser diode 2, in which case, depending on the number of emission points, only one optical element 31 may be generated.

[0061] The method described above can in principle be used to generate all radiation directing elements 3, and more particularly optical elements 31, which can be realized depending on the beam shape of the starting laser radiation 5.

[0062] The interior 91 of the sealed laser housing 9 is preferably kept precursor free so that no optical elements are formed therein.

[0063] In all the above-mentioned methods, the radiation exit window base element 80a or the laser diode 2 may be exposed to a precursor by means of a reaction chamber. In all the embodiments, the precursor may in particular be one of the above-mentioned precursors and the substance may be one of the above-mentioned substances.

[0064] This application claims priority from DE102022201340.9, which is incorporated by reference in its entirety into this disclosure. [Explanation of symbols]

[0065] 1. Semiconductor laser 10 Optoelectronic Devices 2. Semiconductor laser diode 20 active area 21 Laser Facet 22 Radiation exit area 3 Radiation inductive element 30 Radiation coupling element 31 Optical elements 4 Support 40 Solder 41 Solder 42 Submount 5 Laser radiation 6 Radiation coupling element 60 Prism 61 Lens 8 Radiation transmission element 8a Radiation exit window 80 Base element 80a Radiation exit window base element 9. Sealed Laser Housing 90 Prism 91 Internal

Claims

1. a semiconductor laser diode (2) having an active region (20) for generating laser radiation (5) and a radiation exit region (22), through which the laser radiation can exit the semiconductor laser diode (2); a radiation inducting element (3) arranged in the radiation exit area (22) on the laser diode (2) and monolithically connected to the laser diode (2), the radiation inducting element (3) comprising or consisting of a material that can be provided by the laser radiation (5) on the laser diode (2), the radiation inducting element (3) further comprising a radiation coupling element (6), the radiation coupling element (6) being monolithically connected to the radiation inducting element (3), Semiconductor laser (1).

2. the laser diode (2) is an edge-emitting laser diode, the radiation exit area (22) is an area of ​​a laser facet (21), and the radiation directing element (3) in the radiation exit area (22) is arranged directly on the laser facet (21) and is monolithically connected to the laser facet (21), A semiconductor laser (1) according to claim 1.

3. The radiation inducing element (3) is configured to allow operation of the semiconductor laser (1) in normal atmosphere.

3. The semiconductor laser according to claim 1.

4. the radiation coupling element (6) is located after the radiation directing element (3) along the beam path of the laser radiation (5) which may be generated by the semiconductor laser, 4. The semiconductor laser according to claim 1.

5. The material comprises silicon, aluminum, tantalum, hafnium or titanium; 5. The semiconductor laser according to claim 1.

6. Providing a semiconductor laser diode (2) having an active region (20) for generating laser radiation (5) and a radiation exit region (22), through which laser radiation can exit the semiconductor laser diode (2). １ )and, Providing a radiative coupling element (6) (S １a )and, During operation of the laser diode (2), the radiation coupling element (6) is positioned relative to the laser diode (2) such that the laser radiation (5) is transmitted through the radiation coupling element (6). １b )and, Providing a radiation guide element (3) for the laser diode (2) in the radiation exit area (22) (S ２ ), and the step (S ２ )teeth, A step (S2) of exposing both the laser diode (2) and the radiation coupling element (6) to a precursor capable of being induced into a chemical reaction by the laser radiation (5) and to the atmosphere. ２a )and, A step (S) of operating the laser diode (2) to induce a chemical reaction and convert the precursor into a material that monolithically forms the radiation directing element (3) in the radiation exit area (22) and monolithically connects the laser diode (2) to the radiation coupling element (6). ２b ) and A method for manufacturing a semiconductor laser (1).

7. The precursor and the material comprise silicon, aluminum, tantalum, hafnium or titanium; The method according to claim 6.

8. A semiconductor laser (1) according to any one of claims 1 to 4 is manufactured, The method according to claim 6 or 7.

9. one or more semiconductor laser diodes (2) each having an active region (20) for producing laser radiation; a hermetically sealed laser housing (9) having a radiation exit window (8a) and in which the semiconductor laser diode (2) is arranged, The radiation exit window is A radiation exit window base element (80a); one or more optical elements (31) arranged on and monolithically connected to said radiation exit window base element (80a), said optical element (31) comprises or consists of a material that can be provided by laser radiation on said radiation exit window base element (80a), said laser diodes (2) being arranged with respect to said radiation transmitting elements (8) such that each laser diode (2) corresponds to one or more of said optical elements (31) through which the laser radiation of each laser diode (2) can be emitted in an operative state; An optoelectronic device (10).

10. The material comprises silicon, aluminum, tantalum, hafnium or titanium; 10. An optoelectronic device according to claim 9.

11. Providing one or more semiconductor laser diodes (2) having an active region (20) for generating laser radiation (S ３１ )and, Providing (S32) a hermetically sealed laser housing (9) having a radiation exit window base element (80a); A step (S) of arranging the laser diode (2) in a laser housing (9) so that, in an operating state, the laser radiation (5) of the laser diode (2) can exit through the radiation exit window base element (80a). ３３ )and, Providing one or more optical elements (31) on said radiation exit window base element (80a) (S ３４ ), and the step (S ３４ )teeth, A step (S) of exposing said radiation exit window base element (80) to a precursor capable of being induced to react chemically with the laser radiation (5) and to the atmosphere. ３４a )and, A step (S) of operating the laser diode (2) to induce a chemical reaction and convert the precursor into a material that forms the optical element (31) monolithically on the radiation exit window base element (80a). ３４b ) and A method for manufacturing an optoelectronic device (10).

12. The precursor and the material comprise silicon, aluminum, tantalum, hafnium or titanium; The method of claim 11.

Images