Interruption system configured to control transmission of an optical signal - Patents.com

Abstract

1. An interruption system 10 configured to control the transmission of an optical signal, the system comprising solid-state optical amplifiers (AMP, AMP1, AMP2), the solid-state optical amplifiers (AMP, AMP1, AMP2) being: Input optical signals (SOE, SOE1, SOE2) control signals (SC, SC1, SC2) configured to control semiconductor optical amplifiers (AMP, AMP1, AMP2); configured to receive The blocking system 10 is characterized in that the blocking system further comprises cooling devices (12, 12-1, 12-2) configured to cool the semiconductor optical amplifiers (AMP, AMP1, AMP2) to a temperature of 10 K or more, preferably 40 K or more, and to cool the optical modulator to a temperature of 90 K or less, preferably 80 K or less.

Description

[Technical field]

[0001] The present invention relates to an interruption system configured to control the transmission of an input optical signal. [Background technology]

[0002] It is known to use different systems to block the transmission of an input signal.

[0003] EP 2242191 describes a repeater, a signal processing device and an optical transmission system applied in a passive optical network. US 10,097,281 describes an optoelectronic data link system with cryogenic cooling. US 2014 / 139909 describes an optical amplification device.

[0004] Microelectromechanical systems (MEMs), thermo-optical systems, electro-optical systems and acousto-optical systems are useful systems for transmitting relatively long data packets. However, due to their inherent limitations, these systems have the disadvantage that the switching speed between a transmitting state and a non-transmitting state is relatively slow. Therefore, these blocking systems are not suitable for input signals containing relatively short data packets.

[0005] In the context of optoelectronic amplifiers such as solid-state optical amplifiers, the blocking is controlled by a control signal. When the power of the control signal is too low, the amplifier is no longer powered and can no longer receive the input signal. When the power of the control signal is sufficient to power the semiconductor optical amplifier, the semiconductor optical amplifier can receive and amplify the input signal.

[0006] There are all-optical systems for blocking the transmission of an input signal. In the case of all-optical blocking systems, a control signal is formed by an optical signal. The control optical signal is an optical pump signal, which is used to power a semiconductor optical amplifier and to control the on or off state of the amplifier depending on the power of the pump optical signal.

[0007] The use of optical control signals allows switching between a state that allows transmission and a state that blocks the transmission of the input signal to the semiconductor optical amplifier for a time that is very short compared to the length of the input signal data packets. These blocking systems are therefore adapted to input signals that include relatively short and / or relatively long data packets.

[0008] However, at room temperature, the use of an all-optical blocking system such as a semiconductor optical amplifier is nearly impossible due to the power of the control signals required by the semiconductor optical amplifier. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] European Patent Application Publication No. 2242191 [Patent Document 2] U.S. Patent No. 10,097,281 [Patent Document 3] US Patent Application Publication No. 2014 / 139909 Summary of the Invention

[0010] There is therefore a need to be able to control the transmission of an input optical signal adapted to the length of the data packets, and more specifically to relatively short data packets, while requiring low power for the control signals.

[0011] It is an object of the present invention to provide a system that meets these needs.

[0012] For this purpose, the invention relates to a blocking system adapted to control the transmission of an optical signal, said system comprising a semiconductor optical amplifier (AMP, AMP1, AMP2), said semiconductor optical amplifier (AMP, AMP1, AMP2) being: Input optical signals (SOE, SOE1, SOE2) control signals (SC, SC1, SC2) configured to control semiconductor optical amplifiers (AMP, AMP1, AMP2); configured to receive The present invention relates to an isolation system, characterized in that the isolation system further comprises cooling devices (12, 12-1, 12-2) configured to cool the semiconductor optical amplifiers (AMP, AMP1, AMP2) to a temperature of 10 K or more, preferably 40 K or more, and to cool the optical modulator to a temperature of 90 K or less, preferably 80 K or less.

[0013] Advantageously, cooling the optical amplifier to cryogenic temperatures allows switching between transmitting and not transmitting the input optical signal to the semiconductor optical amplifier without requiring significant power from a control signal. At such temperatures, the semiconductor optical amplifier does not need to be powered. The switching energy is low and can be transmitted by a control signal, for example in the form of an optical signal.

[0014] Advantageously, the isolation system according to the invention is exposed to temperatures of 10 K or more, preferably 40 K or more, and 90 K or less, preferably 80 K or less, allowing the semiconductor optical amplifier to have an attenuation factor of more than 30 dB. The attenuation factor of the same amplifier at room temperature is of the order of 20 dB.

[0015] The attenuation rate corresponds to the variation in power in dB between the power of the optical signal at the output of the semiconductor optical amplifier in the on state and the power of the optical signal at the output of the amplifier in the off state. The on state occurs when the control signal provides the semiconductor optical amplifier with enough energy to power it. Conversely, the off state occurs when the control signal does not provide enough energy to power the semiconductor optical amplifier. Note that in the blocked state, the power is non-zero due to the presence of noise.

[0016] Advantageously, the barrier system may also include one or more of the following features, taken individually or in any technically possible combination: the control signal is an electrical signal, and / or the control signal is an optical signal; and / or the semiconductor optical amplifier is a bidirectional component configured to receive the input optical signal and the control optical signal in opposite directions; and / or the cooling device is direct, and / or - the cooling device is indirect, and / or the cooling device is active, and / or the cooling device is passive, and / or the cooling device comprises a temperature regulator, the temperature regulator being configured to maintain the semiconductor optical amplifier at a target temperature with a margin of no more than +500 mK, preferably no more than +200 mK, and no less than -500 mK, preferably no more than -200 mK; and / or the semiconductor optical amplifier forms part of a photonic integrated circuit; and / or The blocking system includes a plurality of semiconductor optical amplifiers, each of the plurality of semiconductor optical amplifiers having: Each input optical signal, a respective control signal configured to control the semiconductor optical amplifier; and / or at least two semiconductor optical amplifiers are at different temperatures; and / or the same cooling device is configured to cool at least two semiconductor optical amplifiers; and / or the cooling device comprises a device for regulating the temperature of at least two semiconductor optical amplifiers; and / or the control signal is a shared control signal for each of the optical semiconductor amplifiers; and / or - the control optical signal and the input optical signal have different polarizations; and / or the wavelength of the input optical signal differs from the wavelength of the control optical signal by at least 0.05 nm, preferably at least 0.1 nm, preferably at least 0.5 nm, preferably at least 1 nm, preferably at least 1.5 nm, even more preferably at least 5 nm; and / or the power of the optical control signal is greater than or equal to -30 dBm, preferably greater than or equal to -10 dBm, and less than or equal to +10 dBm, preferably less than or equal to +5 dBm; and / or the power of the input optical signal is at least 5 dB less than the power of the control optical signal, and / or -The cooling device is a bar made of a material having a thermal conductivity of at least 20 watts per meter Kelvin, in which the amplifier is disposed; a cold spot provided at a first position of the bar; a temperature control device including a temperature sensor provided at a second position of the bar; Equipped with.

[0017] The invention will be better understood in the light of the following description, given only by way of indication and without the intention of limiting the invention, in conjunction with the following drawings, in which: [Brief description of the drawings]

[0018] [Figure 1] 1 is a schematic diagram of an isolation system according to the present invention according to a first embodiment; FIG. [Diagram 2] FIG. 2 is a schematic diagram of an isolation system according to the present invention according to a second embodiment. [Figure 3a] FIG. 4 is a schematic diagram of an isolation system according to the present invention according to a third embodiment. [Figure 3b] FIG. 13 is a schematic diagram of an isolation system according to the present invention, according to a fourth embodiment. [Figure 4] FIG. 13 is a schematic diagram of an isolation system according to the present invention, according to a fifth embodiment. [Diagram 5] FIG. 13 is a schematic diagram of an isolation system according to the present invention according to a sixth embodiment. [Figure 6] FIG. 13 is a schematic diagram of an isolation system according to the present invention, according to a seventh embodiment. [Figure 7] FIG. 13 is a schematic diagram of an isolation system according to the present invention, according to an eighth embodiment. [Figure 8] FIG. 13 is a schematic diagram of an isolation system according to the present invention, according to a ninth embodiment. [Figure 9] FIG. 17 is a schematic diagram of an isolation system according to the present invention, according to a tenth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] FIG. 1 illustrates a blocking system 10 configured to control transmission of an input optical signal SOE, the system including semiconductor optical amplifiers (AMP, AMP1, AMP2), the semiconductor optical amplifiers (AMP, AMP1, AMP2) being: Input optical signals (SOE, SOE1, SOE2) control signals (SC, SC1, SC2) configured to control semiconductor optical amplifiers (AMP, AMP1, AMP2); and characterized in that the blocking system further comprises cooling devices (12, 12-1, 12-2) configured to cool the semiconductor optical amplifiers (AMP, AMP1, AMP2) to a temperature of 10 K or more, preferably 40 K or more, and to cool the optical modulator to a temperature of 90 K or less, preferably 80 K or less.

[0020] The control signal SC is a signal that adjusts the transmission and amplification of the input optical signal SOE by the solid-state optical amplifier AMP.

[0021] The control signal SC may be electrical or optical.

[0022] Advantageously, when the control signal SC is optical, the control signal may be remote.

[0023] Advantageously, the blocking system according to the invention is all-optical and therefore insensitive to electromagnetic interference.

[0024] Advantageously, the control signal SC may be used to provide a power supply to a semiconductor optical amplifier AMP.

[0025] It is noted that, surprisingly, the AMP semiconductor optical amplifier provides a non-zero gain when exposed to cryogenic temperatures of 10 K or more, preferably 40 K or more, and 90 K or less, preferably 80 K or less, and is provided with a low power supply of the order of a few milliamps. At this temperature, the semiconductor optical amplifier AMP is energy efficient, so that it is then possible to supply switching energy to the semiconductor optical amplifier AMP in the form of an optical signal via a control signal SC.

[0026] In this way, the beam of the laser used to provide the optical SC control signal may also be used to power the semiconductor optical amplifier AMP.

[0027] In the all-optical blocking system according to the present invention, the input optical signal SOE has a power different from that of the control signal SC. Preferably, the power of the input optical signal SOE is less than the power of the control signal SC such that the semiconductor optical amplifier AMP distinguishes the control signal SC from the input optical signal SOE.

[0028] The control signal for the semiconductor amplifier AMP is the signal having the highest power among the input optical signal SOE and the control signal SC.

[0029] The signal with the highest power between the input optical signal SOE and the control signal SC takes on the role of the control signal, even if this is not its initial function.

[0030] Therefore, preferably, the power of the input optical signal SOE is at least 5 dB lower, preferably at least 10 dB lower, than the power of the control signal SC.

[0031] In one embodiment, the power of the control signal is greater than or equal to -30 dBm, preferably greater than or equal to -10 dBm, and less than or equal to +10 dBm, preferably less than or equal to +5 dBm, where dBm is a unit of power expressed in decibels (dB) relative to a reference value of 1 milliwatt (mW).

[0032] The control signal SC may have a polarization different from the polarization of the input optical signal SOE, for example, the control signal SC may be in a transverse electric mode, respectively a transverse magnetic mode, and the input optical signal SOE may be in a transverse magnetic mode, respectively a transverse electric mode.

[0033] The AMP solid-state optical amplifier is a bidirectional optoelectronic component. The input optical signal SOE and the optical control signal SC can be provided together using a single optical fiber at one of the terminals of the semiconductor optical amplifier AMP.

[0034] In one embodiment shown in Figure 2, the optical input signal SOE and the optical control signal SC are provided to the semiconductor optical amplifier AMP in opposite directions via terminals on either side of the amplifier. The input optical signal SOE and the control signal SC are considered to be in opposite directions.

[0035] For ease of understanding of Figure 2, the control signal SC and the output optical signal SOS are shown separately to define the propagation directions of these signals. However, the control signal SC and the optical output signal SOS are counter-propagating signals on the same optical fiber.

[0036] In another embodiment, the wavelength of the control signal SC and the wavelength of the input optical signal SOE may be different, regardless of whether the control signal SC and the input optical signal SOE have different polarities or are transmitted to two opposite terminals of the semiconductor optical amplifier AMP. For example, the wavelength of the control signal SC and the wavelength of the input optical signal SOE differ by at least 0.05 nm, preferably at least 0.1 nm, preferably 0.5 nm, preferably at least 1 nm, preferably at least 1.5 nm, and even more preferably at least 5 nm.

[0037] In one embodiment, the blocking system 10 may include N semiconductor optical amplifiers, each of which has: - respective input optical signals SOE1, SOE2, ... SOEN; - respective control signals SC1, SC2, ..., SCN configured to control the semiconductor optical amplifiers AMP1, AMP2, ..., AMPN; The device is configured to receive

[0038] At least one of the N semiconductor optical amplifiers AMP1, AMP2, . . . , AMPN is configured to be cooled by a cooling device 12.

[0039] The cooling device may be the same for each of the N semiconductor optical amplifiers AMP1, AMP2, . . . , AMPN.

[0040] The cooling device may be the same for at least two of the N semiconductor optical amplifiers AMP1, AMP2, . . . , AMPN.

[0041] Each of the N semiconductor optical amplifiers AMP1, AMP2, ..., AMPN may be cooled by a respective cooling device 12-1, 12-2 (shown in Figure 3a).

[0042] Preferably, each of the semiconductor optical amplifiers AMP1, AMP2 of the blocking system 10 is cooled by a cooling device to a cryogenic temperature of 10K or more, preferably 40K or more, and 90K or less, preferably 80K or less.

[0043] For the remainder of the description, for ease of understanding, reference will be made to only two semiconductor optical amplifiers AMP1, AMP2. However, the description of the embodiment with two semiconductor optical amplifiers AMP1, AMP2 may also be applied to N semiconductor optical amplifiers AMP1, AMP2, ..., AMPN.

[0044] 3a shows a blocking device 10 including two semiconductor optical amplifiers AMP1, AMP2. For each of the two semiconductor optical amplifiers AMP1, AMP2, an input optical signal SOE1, SOE2 and a control signal SC1, SC2, respectively, are fed together to the terminals of the semiconductor optical amplifier using a single optical fiber.

[0045] Each of the two semiconductor optical amplifiers AMP1, AMP2 receives a respective input optical signal SOE1, SOE2 and a control signal SC1, SC2 to provide a respective output optical signal SOS1, SOS2.

[0046] FIG. 3b is substantially identical to FIG. 3a and shows an isolation system 10 according to the present invention, in which a first semiconductor optical amplifier AMP1 receives a first control signal SC1 in a first direction and a second semiconductor optical amplifier AMP2 receives a second control signal SC2 in a second direction opposite to the first direction.

[0047] As in Figure 2, the control signal SC2 and the output optical signal SOS2 are shown separately to define the propagation directions of these signals, however, the control signal SC2 and the output optical signal SOS2 are counter-propagating signals in the same optical fiber.

[0048] In one embodiment, the first semiconductor optical amplifier AMP1 receives a first input optical signal SOE1 in a first direction, and the second semiconductor optical amplifier AMP2 receives a second input optical signal SOE2 in a second direction opposite to the first direction. Each of the two semiconductor optical amplifiers AMP1, AMP2 is a bidirectional component.

[0049] The two semiconductor optical amplifiers AMP1, AMP2 are cooled by the same cooling device 12 or by respective cooling devices.

[0050] Advantageously, the cooling device 12 may be shared by using the same cooling device for the two semiconductor optical amplifiers AMP1, AMP2.

[0051] The two semiconductor optical amplifiers AMP1, AMP2 may be maintained at the same temperature to amplify the input optical signals SOE1, SOE2 over the same wavelength range, making it possible, for example, to simultaneously amplify two signals that belong to the same wavelength range but have different operating points.

[0052] Alternatively, the two semiconductor optical amplifiers AMP1, AMP2 may be maintained at different temperatures to amplify the input optical signals SOE1, SOE2 over different wavelength ranges. For example, the two semiconductor optical amplifiers AMP1, AMP2 may be maintained at temperatures having a difference of, for example, 5 K or more, and, for example, 10 K or more. In this way, the input signals SOE1, SOE2 may be amplified at different bandwidths.

[0053] In one embodiment shown in FIG. 4, the same control signal SC is pooled for the two semiconductor optical amplifiers AMP1, AMP2.

[0054] Advantageously, in this way switching between sending and blocking the data transmission can be ensured simultaneously in the semiconductor optical amplifiers AMP1, AMP2.

[0055] The input signal may be shared, as in the embodiment shown in Figure 4, where the control signal SC is shared. A single input signal SOE may be split in two and fed to two solid-state optical amplifiers AMP1, AMP2.

[0056] In one embodiment, the input optical signal SOE and the control signal SC are each shared for at least two amplifiers.

[0057] Advantageously, the same amplified signal may be provided simultaneously at separate locations.

[0058] In one embodiment, the input optical signal may be shared, with each semiconductor optical amplifier receiving a respective control signal.

[0059] Advantageously, in this way it can be selected, for the same input optical signal SOE, to select at least one semiconductor optical amplifier for amplifying the input optical signal.

[0060] In one embodiment, a shared input optical signal is fed to two semiconductor optical amplifiers AMP1, AMP2 maintained at two different temperatures to amplify the input optical signal SOE over two different bandwidths.

[0061] In one embodiment, at least one semiconductor optical amplifier AMP, AMP1, AMP2 is a discrete component.

[0062] Alternatively, as shown in Figure 5, a single solid-state optical amplifier AMP or multiple solid-state optical amplifiers AMP1, AMP2 may form part of an integrated circuit 22. The integrated circuit 22 is for example a photonic integrated circuit.

[0063] The cooling device 12 of the isolation system 10 is preferably a cryogenic cooling device.

[0064] The cooling device 12 may be indirect. A cooling device is considered to be indirect if the cooling means do not act directly on the AMP semiconductor optical amplifier, but for example on a thermally conductive element on which the semiconductor optical amplifier AMP is arranged. The thermally conductive element cooled by the cooling means then cools the semiconductor optical amplifier AMP by thermal conduction.

[0065] The indirect cooling device 12 may for example be formed by a thermally conductive bar cooled at one of its ends by a cooling means, the bar being adapted to receive at least one semiconductor optical amplifier AMP.

[0066] Advantageously, the indirect cooling device allows the cooling means to be shared for several AMP, AMP1 and AMP2 semiconductor optical amplifiers. The bar may for example accommodate at least two AMP, AMP1, AMP2 semiconductor optical amplifiers on a thermally conductive bar arranged at different positions.

[0067] Alternatively, the cooling device 12 can be a direct cooling device 12 configured to provide a thermal control directly at the semiconductor optical amplifier AMP.

[0068] The direct cooling device may be formed by dedicated cooling means for locally cooling one or more semiconductor optical amplifiers AMP, AMP1, AMP2.

[0069] Advantageously, there is no need to resort to electrically conductive thermal structures in which the semiconductor optical amplifiers AMP, AMP1, AMP2 are arranged.

[0070] Advantageously, the use of a direct cooling device 12 allows for better control of the temperature supplied to the at least one semiconductor optical amplifier AMP, AMP1, AMP2.

[0071] Also, as part of the direct cooling device 12, it is easier and faster to compensate for fluctuations in the semiconductor optical amplifier AMP. There is no need to wait for the conductive elements to reach a desired temperature at which the semiconductor optical amplifier AMP is located.

[0072] The cooling device 12 may be a passive cooling device.

[0073] For example, the passive cooling device can be a radiator in contact with the semiconductor optical amplifier AMP. The radiator radiates to the outside of the semiconductor optical amplifier AMP, such as a device for extracting thermal energy by radiation. The passive cooling device 12 can also be formed by a cooling circuit containing liquid nitrogen.

[0074] A passive cooling device has no energy input and advantageously reduces the energy consumption for maintaining the semiconductor optical amplifiers AMP, AMP1, AMP2 at cryogenic temperatures.

[0075] The cooling device 12 can be active. An active cooling device requires an energy input to ensure the cooling of the semiconductor optical amplifier AMP. Despite the need for an energy input, the temperature control of the optical semiconductor amplifier AMP is made faster and more reliable by controlling the cooling device by regulating its power supply.

[0076] To ensure accurate temperature control of at least one, or each, of the semiconductor optical amplifiers AMP1, AMP2, the cooling devices 12, 12-1, 12-2 may include temperature controllers 14, 14-1, 14-2 (shown in FIG. 7).

[0077] Preferably, the temperature controllers 14, 14-1, 14-2 are configured to maintain the semiconductor optical amplifiers AMP, AMP1, AMP2 at a target temperature with a margin of no more than +500 mK, preferably no more than +200 mK, and no less than -500 mK, preferably no more than -200 mK.

[0078] Advantageously, precise control of the temperature of the semiconductor optical amplifiers AMP, AMP1, AMP2 allows precise control of the wavelength range over which the semiconductor optical amplifiers amplify signals.

[0079] The temperature regulators 14, 14-1, 14-2 also make it possible to compensate for the heat provided to the semiconductor optical amplifiers AMP, AMP1, AMP2 by the control signals. The higher the power of the control signal SC, the greater the heat transferred by this signal. It is therefore important to take into account the thermal effect of the SC control signal in order to ensure that the temperature of the semiconductor optical amplifiers AMP, AMP1, AMP2 is accurately controlled.

[0080] The temperature controller 14 may be used to control the temperature of one of a number of semiconductor optical amplifiers AMP, AMP1, AMP2, as shown in FIG.

[0081] FIG. 7 shows an isolation system according to the invention, in which two semiconductor optical amplifiers AMP1, AMP2 each include a respective cooling device 12-1, 12-2 and a temperature regulator 14-1, 14-2.

[0082] Such a system, using a cooling device and respective temperature regulator, allows for better control of the temperature of each of the two semiconductor optical amplifiers AMP1, AMP2.

[0083] FIG. 8 shows an example of a cooling device 14. The cooling device a bar 16 made of a material with high thermal conductivity, on which N amplifiers are arranged (in the case of FIG. 8, two amplifiers AMP1 and AMP2 are shown); a cold spot 18 provided at a first location E1 of the bar 16; a temperature regulating device 14 comprising a temperature sensor 20 arranged at a second position E2 of the bar; may include.

[0084] Preferably, the bar 16 has a thermal conductivity of 20 watts per meter Kelvin or greater. The temperature at different positions of the bar 30 is different.

[0085] In one embodiment, the bar 16 is made of copper.

[0086] The bar may be made of a material with high thermal conductivity, and the presence of the cold spot 18 makes it possible to create a temperature gradient between a first location E1 where the cold source 18 is located and one end E2 of the bar 16.

[0087] With such temperature gradients, it is important that the semiconductor optical amplifiers AMP1, AMP2 are positioned at the desired target temperatures T1, T2.

[0088] The temperatures of the semiconductor optical amplifiers AMP1 and AMP2 arranged on the rod 16 are adjusted according to their positions on the rod 16.

[0089] The cold spot 18 corresponds to a cooling means configured to cool the bar 16 at a particular location on this bar 16, which corresponds to the first location E1.

[0090] In this manner, the amplifiers located closest to the cold spot 18 will have a cooler temperature than the amplifiers furthest from the cold spot 18 .

[0091] Preferably the cooling means used is a cryogenic cooler.

[0092] The cold spot 18 is preferably positioned at one end of the bar 16 to maximize the temperature gradient between the first and second ends of the bar 16 .

[0093] Positioning the temperature sensor 20 at the second position E2 of the bar 16 makes it possible to determine the temperature of the bar 16 at this second position E2. Since the bar is made of an electrically conductive material, from the measurements of the temperature sensor 34 it is possible to determine, at least approximately, the temperature at each point of the bar 16, and more specifically at the positions where the AMP1, AMP2 semiconductor optical amplifiers are located.

[0094] Advantageously, from the temperature measurement at said second position E2 of the rod 16, the cooling device 12 is able to determine whether the temperature of the semiconductor optical amplifiers AMP1, AMP2 corresponds to a desired target temperature.

[0095] If the temperature of at least one semiconductor optical amplifier AMP1, AMP2 differs from a desired target temperature T1, T2, the cooling device 12 controls the regulating device 14 to regulate the temperature of the cold spot 18 of the bar 16.

[0096] In another embodiment shown in Fig. 9, the cooling device independently controls the temperatures T1, T2 of the AMP1, AMP2 semiconductor optical amplifiers. If one of the semiconductor optical amplifiers AMP1, AMP2 is not at the desired target temperature, the temperature regulator 14 independently adjusts the temperature of this amplifier AMP1, AMP2.

[0097] Each of the semiconductor optical amplifiers AMP1, AMP2 is associated with a respective additional thermal source S1, S2, each of the additional thermal sources S1, S2 configured to individually regulate the temperature of one of the semiconductor optical amplifiers AMP1, AMP2.

[0098] In one embodiment, the N additional thermal sources are Peltier modules and / or resistors.

[0099] Advantageously, the Peltier modules make it possible to regulate the temperature of the semiconductor optical amplifiers AMP1, AMP2 by locally increasing or decreasing their temperature.

[0100] Advantageously, the resistors make it possible to regulate the temperature of the semiconductor optical amplifiers AMP1, AMP2 by locally increasing their temperature.

[0101] The embodiment shown in Figure 9 is similar to the configuration shown in Figure 8, but with a different temperature controller 14. The temperature controller 14 no longer regulates the temperature of the cold point 18 of the rod 16, but directly regulates the temperature of the additional heat sources S1, S2.

[0102] The embodiment shown in FIG. 9 may be without the bar 16 and the cold spot 18, and without the heat sources S1 and S2 providing cold to the semiconductor amplifiers S1, S2.

[0103] The invention has been explained above using the embodiments shown in the drawings, without limiting the general inventive concept.

[0104] Many other modifications and variations will suggest themselves to those skilled in the art after reflection on the different embodiments shown in the present application.

[0105] These embodiments are given by way of example and do not limit the scope of the invention, which is determined exclusively by the claims below.

[0106] In the claims, the word "comprising" does not exclude other elements or steps. The mere fact that different features are recited in mutually dependent claims does not indicate that a combination of these features cannot be used to advantage. Finally, any references used in the claims shall not be interpreted as limiting the scope of the invention.

Claims

1. A blocking system (10) configured to control the transmission of an optical signal, said system comprising semiconductor optical amplifiers (AMP, AMP1, AMP2), said semiconductor optical amplifiers (AMP, AMP1, AMP2) comprising: Input optical signals (SOE, SOE1, SOE2), control signals (SC, SC1, SC2) configured to control the semiconductor optical amplifiers (AMP, AMP1, AMP2); configured to receive the isolation system further comprises cooling devices (12, 12-1, 12-2) configured to cool the semiconductor optical amplifiers (AMP, AMP1, AMP2) to a temperature of 10 K or more, preferably 40 K or more, and to cool the optical modulator to a temperature of 90 K or less, preferably 80 K or less; Isolation system (10).

2. 2. An interruption system according to claim 1, characterized in that the control signals (SC, SC1, SC2) are electrical signals.

3. 2. An interruption system according to claim 1, characterized in that the control signals (SC, SC1, SC2) are electrical signals.

4. 4. The isolation system of claim 3, wherein the semiconductor optical amplifiers (AMP, AMP1, AMP2) are bidirectional components configured to receive the input optical signals (SOE, SOE1, SOE2) and the control optical signals (SC, SC1, SC2) in opposite directions.

5. 2. The isolation system according to claim 1, characterized in that the cooling device (12, 12-1, 12-2) is direct.

6. 2. The isolation system according to claim 1, characterized in that the cooling device (12, 12-1, 12-2) is indirect.

7. 2. The shutdown system according to claim 1, wherein the cooling devices (12, 12-1, 12-2) include temperature regulators (14, 14-1, 14-2), the temperature regulators being configured to maintain the semiconductor optical amplifiers (AMP, AMP1, AMP2) at target temperatures (T1, T2) with a margin of 500 mK or less, preferably 200 mK or less, and -500 mK or more, preferably -200 mK or more.

8. 2. The isolating system according to claim 1, characterized in that the semiconductor optical amplifiers (AMP, AMP1, AMP2) form part of an integrated photonic circuit (22).

9. The blocking system (10) includes a plurality of semiconductor optical amplifiers (AMP, AMP1, AMP2), each of the plurality of semiconductor optical amplifiers (AMP, AMP1, AMP2) the respective input optical signals (SOE, SOE1, SOE2), - respective control signals (SC, SC1, SC2) configured to control said semiconductor optical amplifiers (AMP, AMP1, AMP2); The shutdown system of claim 1 , configured to receive:

10. 10. The isolation system according to claim 9, characterized in that at least two semiconductor optical amplifiers (AMP, AMP1, AMP2) are at different temperatures.

11. 10. The isolation system according to claim 9, wherein said control signals (SC, SC1, SC2) are shared control signals for each of said semiconductor optical amplifiers (AMP, AMP1, AMP2).

12. 10. The isolation system according to claim 9, characterized in that the same cooling device (12, 12-1, 12-2) is configured to cool at least two semiconductor optical amplifiers (AMP, AMP1, AMP2).

13. 4. The blocking system according to claim 3, characterized in that the control optical signals (SC, SC1, SC2) and the input optical signals (SOE, SOE1, SO2) have different polarizations.

14. 4. The blocking system according to claim 3, characterized in that the wavelengths of the input optical signals (SOE, SOE1, SO2) differ from the wavelengths of the control optical signals (SC, SC1, SC2) by at least 0.05 nm, preferably at least 0.1 nm, preferably at least 0.5 nm, preferably at least 1 nm, preferably at least 1.5 nm, even more preferably at least 5 nm.

15. The blocking system according to claim 3, characterized in that the power of the optical control signals (SC, SC1, SC2) is greater than or equal to -30 dBm, preferably greater than or equal to -10 dBm, and less than or equal to +10 dBm, preferably less than or equal to +5 dBm.

16. 4. An interruption system according to claim 3, characterized in that the power of said input optical signals (SOE, SOE1, SO2) is at least 5 dB less than said power of said control optical signals (SC, SC1, SC2).

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