Optoelectronic module and method for manufacturing the same

Abstract

An optoelectronic module and a method for manufacturing the optoelectronic module are provided. An optoelectronic module (1) is disclosed, comprising a first semiconductor component (11) on a mounting side (21A) of a first carrier (21) and a second semiconductor component (12) and a third semiconductor component (13) on a mounting side (22A) of a second carrier (22). The semiconductor components (11, 12, 13) are configured to emit electromagnetic radiation of different dominant wavelengths in a common emission direction (ED). The mounting side (21A) of the first carrier (21) faces the mounting side (22A) of the second carrier (22). Further, a method for manufacturing the optoelectronic module (1) is disclosed.

Description

[Technical field]

[0001] An optoelectronic module and a method for manufacturing the optoelectronic module are disclosed. The optoelectronic module is configured to emit electromagnetic radiation. Summary of the Invention [Problem to be solved by the invention]

[0002] One of the problems to be solved is to specify an optoelectronic module which has a particularly compact design.

[0003] A further problem to be solved is to identify a method for producing an optoelectronic module which has a particularly compact design. [Means for solving the problem]

[0004] These problems are solved by the devices and methods according to the independent claims. Advantageous and further embodiments of the devices and methods are the subject of the dependent claims and will become further apparent from the following description and figures.

[0005] According to at least one embodiment, the optoelectronic module comprises a first semiconductor component on a mounting side of a first carrier and a second semiconductor component and a third semiconductor component on a mounting side of a second carrier. The mounting side of the carrier is, for example, the side on which the semiconductor components can be mounted. In particular, the mounting sides each comprise a number of solder pads for mounting the semiconductor components. The first carrier and / or the second carrier are in particular formed of a number of layers. Preferably, the carriers are mechanically self-supporting. The semiconductor components are, for example, configured as light-emitting diodes or laser diodes. In particular, the semiconductor components are designed as single-ridge lasers each having one emitter region.

[0006] According to at least one embodiment of the optoelectronic module, the semiconductor components are configured to emit electromagnetic radiation of different dominant wavelengths in a common emission direction. In particular, the semiconductor components are designed as edge emitters with one emission side each. In other words, the semiconductor components have, in particular, an output coupling facet on one side each. For example, the semiconductor components are each formed as a monolithic component.

[0007] Hereinafter, dominant wavelength refers to the wavelength at which the emission spectrum has a global intensity maximum. The first semiconductor component preferably emits electromagnetic radiation of at least a first dominant wavelength in the red spectral region. The second semiconductor component preferably emits electromagnetic radiation of at least a second dominant wavelength in the green spectral region. The third semiconductor component preferably emits electromagnetic radiation of at least a third dominant wavelength in the blue spectral region.

[0008] Preferably, the emission directions of all semiconductor elements are aligned parallel to one another, in particular the emission directions of the semiconductor components are aligned parallel to the mounting side of the carrier.

[0009] According to at least one embodiment of the optoelectronic module, the mounting side of the first carrier faces the mounting side of the second carrier, in particular, the mounting sides face each other such that the main extension surface of the first carrier is aligned parallel to the main extension surface of the second carrier.

[0010] According to at least one embodiment, the optoelectronic module comprises: a first semiconductor component on a mounting side of the first carrier; a second semiconductor component and a third semiconductor component on a mounting side of the second carrier; the semiconductor components are configured to emit electromagnetic radiation of different dominant wavelengths in a common emission direction; The mounting side of the first carrier faces the mounting side of the second carrier.

[0011] The optoelectronic module of the present disclosure is based, inter alia, on the consideration that various applications require very compact light sources. For example, compact light sources are advantageous for projecting multi-color image content onto mobile devices. Conventional light sources often occupy a large installation space and emit poorly directed electromagnetic radiation over a wide area. Therefore, large and heavy optical systems are also required, which can further increase the dimensions of the portable light source.

[0012] The disclosed optoelectronic module utilizes, inter alia, the idea of ​​arranging multiple semiconductor components on the mounting sides of different carriers and then orienting the carriers such that the mounting sides face each other. As a result, a particularly compact optoelectronic module is obtained. The emission of electromagnetic radiation can advantageously be directed to a small area. The downstream optics can therefore be made very small and compact. Such an arrangement of the semiconductor components also makes it possible to use short control lines, which facilitate high-frequency control of the semiconductor components.

[0013] According to at least one embodiment of the optoelectronic module, the frame body is arranged between the first carrier and the second carrier. In particular, the frame body is a mechanical spacer between the first carrier and the second carrier. The frame body can also protect the semiconductor component from external environmental influences.

[0014] According to at least one embodiment of the optoelectronic module, the frame body is made of an electrically insulating material and comprises a plurality of electrical connection lines. For example, the frame body is made of ceramics or a polymer. The connection lines are provided in particular for supplying the semiconductor components with an operating current. For example, the connection lines are made of metal.

[0015] According to at least one embodiment of the optoelectronic module, the connecting lines are arranged on the inside of the frame body, hereinafter the inside of the frame body being the side of the frame body facing the semiconductor component. Advantageously, the connecting lines on the inside of the frame body are particularly well protected from external environmental influences. Furthermore, the production of the connecting lines on the inside can be simplified.

[0016] According to at least one embodiment of the optoelectronic module, the connecting lines are at least partially embedded in the frame body. The embedded connecting lines are protected from external environmental influences. Contact between the connecting lines and other components can be avoided. The risk of electrical short circuits is advantageously reduced.

[0017] According to at least one embodiment of the optoelectronic module, a connection material is disposed between the frame body and the first carrier and between the frame body and the second carrier, respectively. In particular, the connection material creates a hermetic connection between the frame body and the first and second carriers. For example, the connection material is formed of a solder material, in particular a gold-tin based solder.

[0018] According to at least one embodiment of the optoelectronic module, the first carrier comprises a via leading to an upper side opposite the first semiconductor component. In particular, the via has a recess through the first carrier. The recess preferably extends completely through the first carrier. For example, the recess of the via is partially or completely filled with a conductive material. In particular, the recess is filled with a metal or a metal alloy. Advantageously, the via allows electrical contact of the first semiconductor component from the upper side of the first carrier.

[0019] According to at least one embodiment of the optoelectronic module, the top side of the first carrier is conductively connected to the first carrier via a bonding wire, which is for example made of a metal or a metal alloy, which is advantageously easy to manufacture and can for example replace a via by the first carrier.

[0020] According to at least one embodiment of the optoelectronic module, at least two bonding wires are assigned to each via. Increasing the number of bonding wires per via allows for improved high frequency operation of the electrical connection. Preferably, at least three bonding wires are assigned to each via.

[0021] According to at least one embodiment of the optoelectronic module, the semiconductor component has a plurality of emitter regions. In particular, all semiconductor components have a plurality of emitter regions. For example, the semiconductor component has at least two, preferably at least four, particularly preferably at least twelve emitter regions. In particular, each emitter region emits electromagnetic radiation having the same dominant wavelength. Each semiconductor component can be formed, for example, as a double-ridge laser with two emitter regions each. For example, the dominant wavelengths of the emitter regions of the semiconductor components differ by at least 1 nm, preferably at least 2 nm, in particular at least 5 nm. Small differences in dominant wavelengths can advantageously reduce or avoid undesirable interference effects.

[0022] In accordance with at least one embodiment of the optoelectronic module, the emitter regions of each semiconductor component are controllable independently of one another, which allows, for example, a particularly large dynamic range of the intensity of the emitted electromagnetic radiation.

[0023] According to at least one embodiment of the optoelectronic module, the emitter regions of all semiconductor components are arranged opposite one another. In particular, all emitter regions of the optoelectronic module are arranged in an ellipse with a minor axis length of at most 200 μm, preferably at most 100 μm, particularly preferably at most 60 μm, and a major axis length of at most 1000 μm, preferably at most 500 μm, particularly preferably at most 300 μm. Such a compact arrangement of the emitter regions allows the use of particularly compact downstream optical elements.

[0024] According to at least one embodiment of the optoelectronic module, the distance between the emitter regions of one semiconductor component is at most 10 μm. The small distance between the emitter regions of one semiconductor component contributes to a compact design of the optoelectronic module.

[0025] According to at least one embodiment of the optoelectronic module, the lateral distance from the second semiconductor component to the third semiconductor component is at most 30 μm, preferably at most 10 μm. By lateral distance is meant the distance between the second and third semiconductor components in a direction parallel to the mounting side of the second carrier. A small lateral distance allows for a compact design of the optoelectronic module.

[0026] According to at least one embodiment of the optoelectronic module, the first semiconductor component is located at a maximum vertical distance of 50 μm, preferably at a maximum of 30 μm, from the second and third semiconductor components. By vertical distance is meant the distance in a direction transverse to the mounting side of the second carrier, in particular perpendicular to the mounting side of the second carrier. The vertical distance is set in particular by a vertical extension of the frame body and the semiconductor components.

[0027] According to at least one embodiment of the optoelectronic module, the first carrier and / or the second carrier are made of an electrically insulating material, in particular, the first carrier and / or the second carrier are made of one of the following materials: ceramic, silicon, or glass.

[0028] According to at least one embodiment of the optoelectronic module, the second carrier comprises vias leading to a contact side opposite the mounting side. The vias of the second carrier in particular correspond to the vias of the first carrier. Via the second carrier, solder mounting of the optoelectronic module from the contact side only is possible. This allows, for example, an easier mounting of the optoelectronic module on a circuit board.

[0029] According to at least one embodiment of the optoelectronic module, an optical element is arranged downstream of the semiconductor component in the emission direction of the semiconductor component. The optical element is in particular a collimating lens or a glass plate for protecting the semiconductor component. The optical element is in particular transparent to the electromagnetic radiation generated in the optoelectronic module during operation.

[0030] According to at least one embodiment of the optoelectronic module, an encapsulation compound is arranged between the semiconductor component and the optical element. The encapsulation compound protects the semiconductor component from the influence of the external environment, for example at the emission side of the semiconductor component. Advantageously, a hermetically sealed frame body can be dispensed with. For example, the encapsulation compound is formed of a radiation-transmitting polysiloxane.

[0031] According to at least one embodiment of the optoelectronic module, a fourth semiconductor component is arranged on the first carrier. The fourth semiconductor component preferably has a plurality of fourth emitter regions. In particular, the fourth semiconductor component has the same optical properties as the second semiconductor component. Alternatively, the fourth semiconductor component may be configured to emit electromagnetic radiation in the infrared spectral range.

[0032] Additionally, a method for manufacturing an optoelectronic module is disclosed. In particular, the optoelectronic module can be manufactured by the methods described in this disclosure. That is, all features disclosed in relation to the optoelectronic module are also disclosed for the method for manufacturing the optoelectronic module and vice versa.

[0033] According to at least one embodiment of the method, a first submodule is provided having a first carrier and a first frame element. The first submodule is, for example, designed as a multilayer ceramic substrate. The first frame element is preferably made of metal.

[0034] According to at least one embodiment of the method, a first semiconductor component is mounted on the first carrier. For example, the semiconductor component is mounted on the first carrier by a soldering process. In particular, a mounting body is arranged between the semiconductor component and the first carrier. The mounting body is, for example, made of ceramics.

[0035] According to at least one embodiment of the method, a second submodule is provided, which has a second carrier, a frame body and a second frame element. The second submodule is, for example, designed as a multilayer ceramic substrate. In particular, the frame body comprises a plurality of layers. This advantageously allows for an increased longitudinal extension of the frame body. The second frame element is preferably made of metal.

[0036] According to at least one embodiment of the method, the second semiconductor component and the third semiconductor component are mounted on the second carrier, for example by a soldering process.

[0037] According to at least one embodiment of the method, the first sub-module is connected to the second sub-module. Preferably, the first and second sub-modules are connected by a soldering process. In particular, the sub-modules are connected to each other such that a hermetically sealed optoelectronic module is formed.

[0038] According to at least one embodiment of the method, the method comprises: Providing a first sub-module having a first carrier and a first frame element; Mounting a first semiconductor component on a first carrier; providing a second sub-module having a second carrier, a frame body, and a second frame element; mounting a second semiconductor component and a third semiconductor component on a second carrier; connecting a first sub-module to a second sub-module; has.

[0039] According to at least one embodiment of the method, a plurality of connecting wires are introduced into the frame body. For example, the frame body is made of ceramics or polymer. The connecting wires are provided in particular for supplying the semiconductor component with an operating current. For example, the connecting wires are made of metal. The connecting wires are preferably embedded in the frame body. The embedded connecting wires are protected from the influences of the external environment. Contact of the connecting wires with other components can be avoided. The risk of electrical short circuits is advantageously reduced.

[0040] According to at least one embodiment of the method, the first frame element is provided on the second frame element between the first sub-module and the second sub-module. In particular, the first frame element and the second frame element are in direct contact with each other. Preferably, the lateral extension and shape of the first frame element are identical to the lateral extension and shape of the second frame element. The first frame element and the second frame element can each form a closed shape.

[0041] According to at least one embodiment of the method, the first semiconductor component is mounted cathode-side and anode-side on the first carrier. In other words, the cathode and the anode of the first semiconductor component are oriented oppositely on the first carrier. The first semiconductor component is therefore preferably mounted "p-up". This means that electrical contact of the first semiconductor component can be advantageously made from a single side of the first semiconductor component. Advantageously, bonding wires can be dispensed with.

[0042] According to at least one embodiment of the method, the second semiconductor component and the third semiconductor component are mounted on the second carrier, respectively, on the cathode side. In other words, the cathode of the second semiconductor component and the cathode of the third semiconductor component are oriented facing each other on the second carrier. The second and third semiconductor components are therefore preferably mounted "p-up". In particular, the anodes of the second and third semiconductor components are arranged on the opposite side to the second carrier. The anodes of the second and third semiconductor components may, for example, each be electrically contacted by a bonding wire.

[0043] The optoelectronic modules of the present disclosure are particularly suitable for use as compact laser light sources in portable projection applications, heads-up displays, augmented displays, or virtual reality displays.

[0044] Further advantages and advantageous configurations as well as further embodiments of the optoelectronic module derive from the following exemplary embodiments shown in conjunction with the drawings, in which: [Brief description of the drawings]

[0045] [Figure 1A] 1A-1D are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a first exemplary embodiment, taken from different viewing directions. [Figure 1B] 1A-1D are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a first exemplary embodiment, taken from different viewing directions. [Figure 1C] 1A-1D are top views of an optoelectronic module of the present disclosure according to a first exemplary embodiment from different viewing directions. [Diagram 2] 2 is a schematic cross-sectional view of an optoelectronic module of the present disclosure according to a second exemplary embodiment. [Figure 3A]11A-11C are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a third exemplary embodiment, taken from different viewing directions. [Figure 3B] 11A-11C are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a third exemplary embodiment, taken from different viewing directions. [Figure 4A] 11A-11C are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a fourth exemplary embodiment, taken from different viewing directions. [Figure 4B] 11A-11C are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a fourth exemplary embodiment, taken from different viewing directions. [Figure 5A] 11A-11C are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a fifth exemplary embodiment, viewed from different viewing directions. [Figure 5B] 11A-11C are schematic cross-sectional views of an optoelectronic module of the present disclosure according to a fifth exemplary embodiment, viewed from different viewing directions. [Figure 6] FIG. 13 is a schematic cross-sectional view of an optoelectronic module of the present disclosure according to a sixth exemplary embodiment. [Figure 7A] 3A-3C are schematic plan views of a first sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure; [Figure 7B] 3A-3C are schematic cross-sectional views of a first sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 8A] 3A-3C are schematic plan views of a first sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure; [Figure 8B] 3A-3C are schematic cross-sectional views of a first sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 9A]3A-3C are schematic plan views of a first sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure; [Figure 9B] 3A-3C are schematic cross-sectional views of a first sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 10A] 3A-3C are schematic plan views of a first sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure; [Figure 10B] 3A-3C are schematic cross-sectional views of a first sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 11A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 11B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 12A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 12B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 13A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 13B]3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 14A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 14B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 15A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 15B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 16A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 16B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 17A] 3A-3C are schematic plan views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 17B] 3A-3C are schematic cross-sectional views of a second sub-module of the optoelectronic module of the present disclosure at different steps of a method for manufacturing the optoelectronic module of the present disclosure. [Figure 18A] FIG. 13 is a schematic cross-sectional view of an optoelectronic module according to a seventh embodiment of the present disclosure. [Figure 18B]FIG. 13 is a schematic cross-sectional view of an optoelectronic module according to a seventh embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0046] In the drawings, elements having the same, similar or similar function are provided with the same reference numbers. The figures and the proportions of the elements shown therein should not be considered to be in proportion. Rather, individual elements may be shown with exaggerated size in order to improve visibility and / or comprehension.

[0047] 1A shows a schematic cross-sectional view of an optoelectronic module 1 of the present disclosure according to a first exemplary embodiment. The optoelectronic module 1 has a first semiconductor component 11 on a mounting side 21A of a first carrier 21, and a second semiconductor component 12 and a third semiconductor component 13 on a mounting side 22A of a second carrier 22. The mounting sides 21A and 22A of the carriers 21 and 22 are sides on which the semiconductor components 11, 12, and 13 can be mounted, respectively. In particular, the mounting sides 21A and 22A each comprise a plurality of solder pads for mounting the semiconductor components 11, 12, and 13, respectively.

[0048] The first carrier 21 and / or the second carrier 22 are multi-layered. The first carrier 21 and the second carrier 22 are mechanically self-supporting. The first carrier 21 and the second carrier 22 are formed of an electrically insulating material. In particular, the first carrier 21 and the second carrier 22 are formed of any of the following materials: ceramic, silicon, and glass. Furthermore, the first carrier 21 comprises a connection line 30 provided for the electrical connection of the first semiconductor component 11. The connection line 30 is at least partially or preferably completely embedded in the first carrier 21.

[0049] The second carrier 22 has vias 40 leading to the contact side 22B opposite the mounting side 22A. The vias 40 extend to the contact sides 22B opposite the second semiconductor component 12 and the third semiconductor component 13. In particular, the vias 40 each comprise a recess through the second carrier 22. The recesses extend completely through the second carrier 22. For example, the recesses of the vias 40 are partially or completely filled with a conductive material. In particular, the recesses are filled with a metal or a metal alloy. Advantageously, the vias 40 allow electrical contact of the second and third semiconductor components 12, 13 from the contact side 22B of the second carrier 22.

[0050] As a result, the vias 40 of the second carrier 22 allow solder mounting of the optoelectronic module 1 from the contact side 22B. In this way, for example, mounting of the optoelectronic module 1 on a circuit board can be simplified.

[0051] The semiconductor components 11, 12, 13 are formed, for example, as light-emitting diodes or laser diodes. The semiconductor components 11, 12, 13 are configured to emit electromagnetic radiation of different dominant wavelengths in a common emission direction ED. In particular, the semiconductor components 11, 12, 13 are formed as edge-emitting light-emitting diodes having one emission side each. In other words, the semiconductor components 11, 12, 13 have, in particular, an output coupling facet 10A on one side each.

[0052] The first semiconductor component 11 emits electromagnetic radiation having at least a first dominant wavelength in the red spectral region. The second semiconductor component 12 emits electromagnetic radiation having at least a second dominant wavelength in the green spectral region. The third semiconductor component 13 emits electromagnetic radiation having at least a third dominant wavelength in the blue spectral region. The emission directions ED of all semiconductor components 11, 12, 13 are aligned parallel to one another. The emission directions ED of the semiconductor components 11, 12, 13 are aligned parallel to the mounting sides 21A, 22A of the carriers 21, 22.

[0053] The semiconductor components 11, 12, 13 each have a plurality of emitter regions 110, 120, 130. For example, the emitter regions 110, 120, 130 correspond to the ridges of the semiconductor components 11, 12, 13. The semiconductor components 11, 12, 13 each have four emitter regions 110, 120, 130. In particular, each emitter region 110, 120, 130 emits electromagnetic radiation having the same dominant wavelength. For example, the dominant wavelengths of the emitter regions 110, 120, 130 of the semiconductor components 11, 12, 13 differ from each other by at least 1 nm, preferably at least 2 nm, particularly preferably at least 5 nm. Small differences in dominant wavelengths can advantageously reduce or avoid undesirable interference effects. The emitter regions 110, 120, 130 of each semiconductor component 11, 12, 13 are controllable independently of each other. Independent control allows, for example, a particularly wide dynamic range of the intensity of the emitted electromagnetic radiation.

[0054] The emitter regions 110, 120, 130 of all semiconductor components 11, 12, 13 are arranged opposite one another. This has the advantage that the distance between the emitter regions 110, 120, 130 is as small as possible. In particular, all emitter regions 110, 120, 130 of the optoelectronic module 1 are arranged in an ellipse with a minor axis length NA of at most 60 μm and a major axis length HA of at most 300 μm. Such a compact arrangement of the emitter regions 110, 120, 130 allows the use of a particularly compact downstream optical element 50.

[0055] The frame body 23 is arranged between the first carrier 21 and the second carrier 22. The frame body 23 is a mechanical spacer between the first carrier 21 and the second carrier 22. The frame body 23 can further protect the semiconductor components 11, 12, 13 from the influences of the external environment. The frame body 23 is formed of an electrically insulating material and comprises a plurality of electrical connection lines 30. For example, the frame body 23 is formed of a ceramic or a polymer. The connection lines 30 are provided in particular for supplying the first semiconductor component 11 with an operating current. The connection lines 30 are formed of a metal. The connection lines 30 are completely embedded in the frame body 30. The embedded connection lines 30 are particularly well protected from the influences of the external environment. This advantageously avoids contact between the connection lines 30 and other components. This reduces the risk of electrical short circuits.

[0056] A connection material 70 is disposed between the frame body 23 and the first carrier 21, and between the frame body 23 and the second carrier 22. The connection material 70 provides an airtight connection between the frame body 23 and the first carrier 21, and between the frame body 23 and the second carrier 22. For example, the connection material 70 is formed of a solder material, particularly a gold-tin based solder. Furthermore, a solder material 80 is disposed between the frame body 23 and the first carrier 21, and between the frame body 23 and the second carrier 22, respectively. The solder material connects the frame body connection wire 30 that is conductive with the first frame body 21 and the second frame body 22.

[0057] The distance between the emitter regions 110, 120, 130 of the single semiconductor components 11, 12, 13 is at most 10 μm. A small distance XE between the emitter regions 110, 120, 130 of the single semiconductor components 11, 12, 13 contributes to a compact design of the optoelectronic module 1.

[0058] The lateral distance XL from the second semiconductor component 12 to the third semiconductor component 13 is at most 30 μm, preferably at most 10 μm. By lateral distance XL is meant the distance between the second semiconductor component 12 and the third semiconductor component 13 in a direction parallel to the mounting side 22A of the second carrier 22. A small lateral distance XL enables a compact design of the optoelectronic module 1.

[0059] The first semiconductor component 11 is located at a maximum of 50 μm, preferably at a maximum of 30 μm, away from the second semiconductor component 12 and the third semiconductor component 13 in the vertical direction. By vertical distance XV is meant the distance in a direction transverse to the mounting side 22A of the second carrier 22, in particular in a direction perpendicular to the mounting side 22A of the second carrier 22. The vertical distance XV is determined in particular by the vertical extension of the frame body 23 and the semiconductor components 11, 12, 13.

[0060] FIG. 1B shows a schematic cross-sectional view of the optoelectronic module 1 of the present disclosure according to a first exemplary embodiment, taken along the section line AA of FIG. 1A. In the cross-sectional view of FIG. 1B, it can be seen that an optical element 50 is arranged downstream in the emission direction ED of the semiconductor components 11, 12, 13. The optical element 50 is a glass plate for protecting the semiconductor components 11, 12, 13. The optical element 50 is not in direct contact with the semiconductor components 11, 12, 13. The optical element 50 is arranged on the first carrier 21, the second carrier 22 and the frame body 23. The optical element 50 is arranged on the carriers 21, 22 and the frame body 23, in particular by soldering. Preferably, the optical element is attached using a gold-tin based solder. The frame body 23 has a closed rear side opposite the optical element 50 for sealing the semiconductor components 11, 12, 13.

[0061] 1C shows a schematic top view of the optoelectronic module 1 of the present disclosure according to a first exemplary embodiment. In the top view, it can be seen that the frame body expands in a U-shape. Thus, the semiconductor components 11, 12, 13 are located in an enclosed space and are optimally protected from harmful environmental influences.

[0062] 2 shows a schematic cross-sectional view of an optoelectronic module 1 of the present disclosure according to a second exemplary embodiment. The second exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIGS. 1A, 1B and 1C. In contrast to the first exemplary embodiment, the optical element 50 is formed as a collimating lens. Thus, the optical element 50 can collimate the electromagnetic radiation of the semiconductor components 11, 12, 13 emitted in the emission direction ED of the semiconductor components 11, 12, 13.

[0063] FIG. 3A shows a schematic cross-sectional view of an optoelectronic module of the present disclosure according to a third exemplary embodiment. The third exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIG. 1A. In contrast to the first exemplary embodiment, the optoelectronic module 1 of the third exemplary embodiment does not comprise a connection material 70 between the frame body and the first and second carriers 21, 22. Furthermore, an encapsulation compound 60 is arranged between the output coupling facets 10A of the semiconductor components 11, 12, 13 and the optical element 50. The encapsulation compound 60 is transparent to electromagnetic radiation generated in the optoelectronic module 1 during operation. For example, the encapsulation compound 60 is formed of polysiloxane.

[0064] FIG. 3B shows a schematic cross-sectional view of the optoelectronic module 1 of the present disclosure according to a third exemplary embodiment along the section line AA of FIG. 3A. In the cross-sectional view of FIG. 3B, the encapsulation compound 60 is shown. The outcoupling facets 10A of the semiconductor components 11, 12, 13 are completely covered by the encapsulation compound 60. Thus, the semiconductor components 11, 12, 13 are already sufficiently protected from the influences of the external environment. Thus, the connection material 70 between the frame body 23 and the first and second carriers 21, 22 can be omitted. For example, it is sufficient to connect the frame body 23 to the first and second carriers 21, 22 via the solder material 80 required for the electrical connection. Furthermore, the frame body 23 may have a recess on its own side opposite the optical element 50. This ensures an increased design freedom.

[0065] 4A shows a schematic cross-sectional view of an optoelectronic module 1 of the present disclosure according to a fourth exemplary embodiment. The fourth exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIG. 1A. In contrast to the first exemplary embodiment, the first carrier 21 comprises vias 40 that replace the connecting lines 30 and the solder material 80 of the frame body 23, and a number of bonding wires 90 connect the first carrier 21 to the second carrier 22.

[0066] The via 40 extends to the opposite top side 21B of the first semiconductor component 11. In particular, the via 40 comprises a recess through the first carrier 21. The recess extends completely through the first carrier 21. For example, the recess of the via 40 is partially or completely filled with a conductive material. In particular, the recess is filled with a metal or a metal alloy. Advantageously, the via 40 allows electrical contact of the first semiconductor component 11 from the top side 21A of the first carrier 21.

[0067] The bonding wires 90 connect the vias 40 of the second carrier 22 to the vias 40 of the first carrier 21. In particular, at least two bonding wires 90 are assigned to each via 40. This can reduce the electrical resistance and improve the response behavior in high frequency control.

[0068] Therefore, the frame body 23 can be formed without the electrical connection lines 30. This advantageously simplifies the manufacture of the frame body 23. Furthermore, the solder material 80 between the frame body 23 and the first and second carriers 21, 22 can be omitted.

[0069] Fig. 4B shows a schematic cross-sectional view of an optoelectronic module 1 of the present disclosure according to a fourth exemplary embodiment, taken along a cross section through Fig. 4A. In the exemplary embodiment of Fig. 4B, each via 40 of the first carrier 21 and each via 40 of the second carrier 22 are assigned a bonding wire 90, respectively. Advantageously, more than one bonding wire 90 can also be assigned to each via 40.

[0070] FIG. 5A shows a schematic cross-sectional view of an optoelectronic module 1 of the present disclosure according to a fifth exemplary embodiment. The fifth embodiment essentially corresponds to the first exemplary embodiment shown in FIG. 1A. In contrast to the first exemplary embodiment, the optoelectronic module 1 comprises a fourth semiconductor component 14. The fourth semiconductor component 14 is arranged on the mounting side 21A of the first carrier 21 adjacent to the first semiconductor component 11. The fourth semiconductor component 14 has a plurality of fourth emitter regions 140 configured to emit electromagnetic radiation having at least a fourth dominant wavelength in a fourth spectral range. In particular, the fourth semiconductor component 14 has the same optical properties as the second semiconductor component 12. For example, the fourth semiconductor component 14 has the same dominant wavelength, the same laser threshold, the same operating current and operating voltage at the operating point, and the same transconductance as the second semiconductor component 12. Alternatively, the fourth semiconductor component 14 can be configured to emit electromagnetic radiation in the infrared spectral range.

[0071] The lateral distance XL between the first semiconductor component 11 and the fourth semiconductor component 14 is at most 30 μm, preferably at most 10 μm. Preferably, the lateral distance XL between the first semiconductor component 11 and the fourth semiconductor component 14 is the same as the lateral distance XL between the second semiconductor component 12 and the third semiconductor component 13. The distance between the emitter regions 140 of the fourth semiconductor component 14 is at most 10 μm. Alternatively, an electrical connection of the fourth semiconductor component 14 by means of a bonding wire 90 is also conceivable, as shown in the fourth exemplary embodiment.

[0072] FIG. 5B shows a schematic cross-sectional view of the optoelectronic module 1 of the present disclosure according to a fifth exemplary embodiment, taken along section line AA of FIG. 5A.

[0073] FIG. 6 shows a schematic cross-sectional view of an optoelectronic module 1 of the present disclosure according to a sixth embodiment. The sixth exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIG. 1A. In contrast to the first exemplary embodiment, the connection lines 30 are not embedded in the frame body 23 but are arranged on the inner side 23A of the frame body 23. The inner side 23A of the frame body 23 is the side of the frame body 23 facing the semiconductor components 11, 12, 13. Advantageously, the connection lines 30 on the inner side 23A of the frame body 23 are particularly well protected from external environmental influences. Furthermore, the manufacturing of the connection lines 30 on the inner side 23A can be simplified compared to embedding the connection lines 30 in the frame body 23. Preferably, the connection lines 30 are provided on the inner side 23A of the frame body 23 by sputtering.

[0074] 7A-10B show schematic cross-sectional and plan views of a first sub-module 1A of an optoelectronic module 1 of the present disclosure at different steps of a method for manufacturing an optoelectronic module 1 of the present disclosure.

[0075] 7A shows a schematic top view of a first sub-module 1A of an optoelectronic module 1 of the present disclosure. A first layer 211 of a first carrier 21 is provided having a plurality of connection lines 30. The connection lines 30 are made of metal. For example, the connection lines 30 are made of copper.

[0076] Figure 7B shows a schematic cross-section through the part according to Figure 7A along the section line AA of Figure 7A. The first carrier 21 has an upper side 21B. The connecting wires 30 are arranged on the side of the first layer 211 opposite the upper side 21B of the first carrier 21.

[0077] FIG. 8A shows a schematic top view of the first sub-module 1A of the optoelectronic module 1 of the present disclosure in a further step of the manufacturing method of the first sub-module 1A. The second layer 212 of the first carrier 21 is provided on the first layer 211 of the first carrier 21. The second layer 212 of the first carrier 21 is arranged on the opposite side of the upper side 21B of the first layer 211 of the first carrier 21. The first layer 211 and the second layer 212 together form the first carrier 21. Preferably, the first layer 211 and the second layer 212 are made of the same material. The first layer 211 and the second layer 212 of the first carrier 21 at least partially surround the connection line 30. A plurality of contact areas 500 are arranged on the mounting side 21A of the first carrier 21 opposite the upper side 21B. Furthermore, vias 40 extend through the second layer 212 of the first carrier 21.

[0078] Figure 8B shows a schematic cross-section through the part according to figure 8A along section line AA of figure 8A. In figure 8B it can be seen that the connecting wire 30 is at least partly embedded in the first carrier 21.

[0079] 9A shows a schematic top view of the first sub-module 1A of the optoelectronic module 1 of the present disclosure in a further step of the manufacturing method of the first sub-module 1A. On the mounting side 21A of the first carrier 21, a first frame element 601 and a mounting body 300 are provided. The first frame element 601 is formed of metal. The mounting body 300 is formed of ceramic. The first frame element 601 completely surrounds the mounting body 300. A contact surface 500 is arranged on the side of the mounting body 300 facing away from the first carrier 21.

[0080] FIG. 9B shows a schematic cross-section through the part according to FIG. 9A along section line AA in FIG. 9A.

[0081] 10A shows a schematic top view of the first sub-module 1A of the optoelectronic module 1 of the present disclosure in a further step of the manufacturing method of the first sub-module 1A. The first semiconductor component 11 is arranged on the side of the mounting body 300 opposite the first carrier 21. The first semiconductor component 11 has electrical contacts on a single back surface. Both the anode and the cathode of the first semiconductor component 11 contact the contact surface 500 of the mounting body 300. Thus, the first semiconductor component 11 contacts the anode side and the cathode side of the first carrier 21.

[0082] Figure 10B shows a schematic cross-section through the component according to Figure 10A along the section line AA of Figure 10A, in which it can be seen that the emission direction ED of the first semiconductor component 11 is oriented parallel to the main extension plane of the first carrier 21.

[0083] 11A to 17B show schematic cross-sectional and plan views of a second sub-module 1B of an optoelectronic module 1 of the present disclosure at different steps of a method for manufacturing an optoelectronic module 1 of the present disclosure.

[0084] 11A shows a schematic top view of the second sub-module 1B of the optoelectronic module 1 of the present disclosure. A first layer 221 of the second carrier 22 is provided. The first layer 221 of the second carrier 22 has a plurality of vias 40, which extend across a main extension surface of the first layer 221 of the second carrier 22 and penetrate the first layer 221 of the second carrier 22.

[0085] Fig. 11B shows a schematic cross-section through the part according to Fig. 11A along section line AA in Fig. 11A. A plurality of contact surfaces 500 are arranged on the contact side 22B of the second carrier 22.

[0086] 12A shows a schematic top view of the second sub-module 1 in a further step of the method for manufacturing the second sub-module 1B of the optoelectronic module 1 of the present disclosure. Opposite the contact side 22B of the first layer 221 of the second carrier 22, the second layer 222 of the second carrier 22 is arranged. A plurality of contact surfaces 500 are arranged on the mounting side 22A of the second carrier 22 opposite the contact side 22B. Preferably, the first layer 221 of the second carrier and the second layer 222 of the second carrier are formed of the same material.

[0087] 12B shows a schematic cross-section through the component according to FIG. 12A along the section line AA in FIG. 12A. In the cross-section, it is clearly recognizable that the second layer 222 of the second carrier 22 has a cavity 400. The cavity 400 can advantageously reduce or avoid shadowing of the electromagnetic radiation emitted by the semiconductor component 12, 13 during operation. The cavity starts from the contact surface 500 of the second layer 222 of the second carrier 22 and extends laterally to the end of the second layer 222 of the second carrier. Moreover, the cavity 400 passes completely through the second layer 222 of the second carrier 22.

[0088] 13A shows a schematic top view of the second sub-module 1B of the optoelectronic module 1 of the present disclosure in a further step of the method for manufacturing the second sub-module 1B. A first layer 231 of the frame body 23 is arranged on the mounting side 22A of the second carrier 22. The first layer 231 of the frame body 23 extends laterally in a U-shape. The cavity 400 is not covered by the frame body 23.

[0089] FIG. 13B shows a schematic cross-sectional view through the part according to FIG. 13A along section line AA in FIG. 13A.

[0090] 14A shows a schematic top view of the second sub-module 1B of the optoelectronic module 1 of the present disclosure in a further step of the method for manufacturing the second sub-module 1B. The second layer 232 of the frame body 23 is arranged on the side opposite the mounting side 22A of the first layer 231 of the frame body 23. The second layer part 232 of the frame body 23 extends laterally in a U-shape. Alternatively, the first layer 231 and the second layer 232 of the frame body 23 can be arranged in contiguous layers in a common method step.

[0091] FIG. 14B shows a schematic cross-sectional view through the part according to FIG. 14A along section line AA in FIG. 14A.

[0092] FIG. 15A shows a schematic top view of the second sub-module 1 in a further step of the method for manufacturing the second sub-module 1B of the optoelectronic module 1 of the present disclosure. The third layer 233 of the frame body 23 is arranged on the side opposite the mounting side 22A of the second layer 232 of the frame body 23. The third layer 233 of the frame body 23 has an opening. Around the opening, the second frame element 602 extends on the side opposite the mounting side 22A of the third layer 233 of the frame body 23. The second frame element 602 is formed of metal. The second frame element 602 has a completely closed shape. Furthermore, a plurality of contact surfaces 500 are arranged on the side opposite the mounting side 22A of the third layer 233 of the frame body 23. Preferably, the first layer 231, the second layer 232 and the third layer 233 of the frame body 23 are formed of the same material. The first, second and third layers 231, 232, 233 of the frame body 23 each have a thickness of 100 μm to 300 μm. In particular, the first and second layers 231 and 232 of the frame body 23 each have a thickness of 100 μm, and the third layer 233 of the frame body 23 particularly has a thickness of 200 μm. The frame body 23 as a whole has a thickness of at least 400 μm.

[0093] FIG. 15B shows a schematic cross-sectional view through the part according to FIG. 15A along section line AA in FIG. 15A.

[0094] 16A shows a schematic top view of the second sub-module 1B of the optoelectronic module 1 of the present disclosure in a further step of the method for manufacturing the second sub-module 1B. An optical element 50 is arranged on the side facing the cavity 400. The only opening left in the second sub-module 1B is an opening in the third layer 233 of the frame body 23.

[0095] FIG. 16B shows a schematic cross-sectional view through the part according to FIG. 16A along section line AA in FIG. 16A.

[0096] FIG. 17A shows a schematic top view of the second submodule 1 in a further step of the manufacturing method of the second submodule 1B of the optoelectronic module 1 of the present disclosure. The second semiconductor component 12 and the third semiconductor component 13 are arranged on the mounting side 22A of the second carrier 22. The second and third semiconductor components 12, 13 are mounted through openings in the third layer 233 of the frame body 23. The second and third semiconductor components 12, 13 each comprise an anode and a cathode for electrical connection. The second and third semiconductor components 12, 13 are each arranged with a cathode on the mounting side 22A of the second carrier 22. Thus, the second and third semiconductor components 12, 13 are contacted to the cathode side on the second carrier 22. The anodes of the second and third semiconductor components 12, 13 are located opposite the cathodes of the second and third semiconductor components 12, 13, respectively. The anodes of the second and third semiconductor components 12, 13, respectively, are in electrical contact with a bonding wire 90.

[0097] Figure 17B shows a schematic cross-section through the component according to Figure 17A along the section line AA of Figure 17A, in which it can be seen that the emission direction ED of the second and third semiconductor components 12, 13 is oriented parallel to the main extension plane of the second carrier 22.

[0098] 18A and 18B show schematic cross-sectional views of an optoelectronic module of the present disclosure according to a seventh exemplary embodiment. A first sub-module 1A and a second sub-module 1B are coupled to each other to form an optoelectronic module 1. The first sub-module 1A is attached at its first frame element 601 to the second frame element 602 of the second sub-module 1B. For example, the first frame element 601 is connected to the second frame element 602 by soldering. Furthermore, when the first sub-module 1A and the second sub-module 1B are connected, an electrical connection is established between the contact surface 500 of the first sub-module 1A and the contact surface 500 of the second sub-module 1B.

[0099] The first sub-module 1A is connected to the second sub-module 1B in such a way that a hermetically sealed optoelectronic module 1 is formed, in which the semiconductor components 11, 12, 13 are protected from external environmental influences. In other words, the semiconductor components 11, 12, 13 are enclosed in the optoelectronic module 1 in an air- and liquid-tight manner.

[0100] Figure 18B shows a schematic cross-section through the part according to Figure 18A along the section line AA in Figure 18A, in which it can be clearly seen that emission of electromagnetic radiation in emission direction ED takes place through optical element 50.

[0101] The present invention is not limited by the description based on the embodiment, but rather includes any novel feature and any combination of features, and in particular includes any combination of features in the claims, even if that feature or combination itself is not explicitly recited in the claims or embodiments.

[0102] This patent application claims priority from German patent applications 102022106943.5 and 102022127065.3, the disclosures of which are incorporated herein by reference. [Explanation of symbols]

[0103] 1 Optoelectronics Module 1A 1st submodule 1B Second submodule 10A output coupling facet 11 First Semiconductor Parts 110 First emitter region 12 Secondary semiconductor components 120 Second emitter region 13 Third Semiconductor Parts 130 Third emitter region 14 4th Semiconductor Parts 140 4th emitter region 21 First Career 21A Mounting side 21B Upper side 22 Second Career 22A Mounting side 22B Contact side 23 Frame body 23A inside 30 Connection Line 40 Via 50 Optical Elements 60 Sealing Compound 70 Connecting Materials 80 Soldering materials 90 Bonding Wire 211 1st layer of 1st carrier 212 2nd tier of 1st carrier 221 1st layer of 2nd carrier 222 2nd tier of 2nd carrier 231 First layer of frame body 232 Second layer of frame body 233 Third layer of frame body 300 Implementation 400 Cavity 500 contact surface 601 First frame element 602 Second frame element ED emission direction AA cutting line HA spindle NA secondary shaft XE Distance between emitter regions XL: The lateral distance between semiconductor components XV Vertical distance between semiconductor components

Claims

1. A first semiconductor component (11) is mounted on a mounting side (21A) of a first carrier (21); A second semiconductor component (12) and a third semiconductor component (13) are provided on a mounting side (22A) of the second carrier (22); The semiconductor components (11, 12, 13) are configured to emit electromagnetic radiation of different dominant wavelengths in a common emission direction (ED), The mounting side (21A) of the first carrier (21) faces the mounting side (22A) of the second carrier (22); The semiconductor component (11, 12, 13) has a plurality of emitter regions (110, 120, 130), An optoelectronic module (1), wherein the emitter regions (110, 120, 130) of each semiconductor component (11, 12, 13) are controllable independently of one another.

2. A frame body (23) is disposed between the first carrier (21) and the second carrier (22). An optoelectronic module (1) according to claim 1.

3. The frame body (23) is made of an electrically insulating material and includes a plurality of electrical connection lines (30). An optoelectronic module (1) according to claim 2.

4. The connection line (30) is disposed on the inner side (23A) of the frame body (23). An optoelectronic module (1) according to claim 3.

5. The connecting wire (30) is at least partially embedded in the frame body (23). An optoelectronic module (1) according to claim 3.

6. A connecting material (70) is disposed between the frame body (23) and the first carrier (21) and between the frame body (23) and the second carrier (22), respectively. An optoelectronic module (1) according to any one of claims 2 to 5.

7. The first carrier (21) includes a via (40) leading to an upper side (21B) opposite the first semiconductor component (11). An optoelectronic module (1) according to claim 1 or 2.

8. The upper side (21B) of the first carrier (21) is conductively connected to the first carrier (21) via a bonding wire (90). An optoelectronic module (1) according to claim 7.

9. At least two bonding wires (90) are assigned to each via (40); An optoelectronic module (1) according to claim 8.

10. the emitter regions (110, 120, 130) of all semiconductor components (11, 12, 13) are arranged opposite one another; An optoelectronic module (1) according to any one of the preceding claims.

11. The distance (XE) between the emitter regions (110, 120, 130) of one semiconductor component (11, 12, 13) is at most 10 μm; An optoelectronic module (1) according to any one of the preceding claims.

12. The lateral distance (XL) from the second semiconductor component (12) to the third semiconductor component (13) is at most 30 μm, preferably at most 10 μm; An optoelectronic module (1) according to any one of the preceding claims.

13. The first semiconductor component (11) is located at a maximum vertical distance of 50 μm, preferably at a maximum distance of 30 μm, from the second semiconductor component (12) and the third semiconductor component (13). An optoelectronic module (1) according to any one of the preceding claims.

14. the first carrier (21) and / or the second carrier (22) are formed of an electrically insulating material; An optoelectronic module (1) according to any one of the preceding claims.

15. The second carrier (22) includes a via (40) leading to a contact side (22B) opposite the mounting side (22A). An optoelectronic module (1) according to any one of the preceding claims.

16. A method for manufacturing an optoelectronic module (1), comprising the steps of: Providing a first sub-module (1A) having a first carrier (21) and a first frame element (601); Mounting a first semiconductor component (11) on the first carrier (21); providing a second sub-module (1B) having a second carrier (22), a frame body (23), and a second frame element (602); Mounting a second semiconductor component (12) and a third semiconductor component (13) on the second carrier (22); and connecting the first sub-module (1A) to the second sub-module (1B), A method for manufacturing an optoelectronic module (1).

17. A plurality of connecting wires (30) are introduced into the frame body (23); A method for producing an optoelectronic module (1) according to claim 16.

18. The first frame element (601) is provided on the second frame element (602) between the first sub-module (1A) and the second sub-module (1B), 18. A method for producing an optoelectronic module (1) according to claim 16 or 17.

19. The first semiconductor component (11) is mounted on the first carrier (21) on a cathode side and an anode side. A method for manufacturing an optoelectronic module (1) according to any one of claims 16 to 18.

20. The second semiconductor component (12) and the third semiconductor component (13) are each mounted on the cathode side of the second carrier (22). A method for manufacturing an optoelectronic module (1) according to any one of claims 16 to 19.

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