Coating the interior surfaces of complex objects with atomic layer deposition

Abstract

The method includes attaching a supply apparatus to an inlet of one or more channels of the chamber component. The channels provide one or more gas flow paths between a first side of the chamber component including the inlet of the one or more channels and a second side of the chamber component including the outlet. Further, the method includes attaching an exhaust apparatus to the outlet of the one or more channels. Further, the method includes performing multiple atomic layer deposition cycles to deposit a corrosion resistant coating on an interior surface of the one or more channels of the chamber component.

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE The present disclosure relates to methods relating to atomic layer deposition. More particularly, the present disclosure relates to systems and methods for producing corrosion resistant coatings on interior surfaces of components having complex internal structures and / or high aspect ratios by atomic layer deposition.

[0002] Products may be manufactured by performing one or more manufacturing processes using manufacturing equipment. For example, a semiconductor manufacturing equipment may be used to manufacture substrates using a semiconductor manufacturing process. In some embodiments, the conditions used for processing semiconductors may be harsh. For example, the processing may be performed at high temperatures, include plasmas, and involve corrosive gases. To avoid excessive maintenance and replacement of components, processing chamber components may be constructed to withstand the harmful effects of the target processing conditions. Overview

[0003] The following is a simplified summary of the disclosure to provide a basic understanding of some aspects of the disclosure. This summary is not an extensive overview of the disclosure. It is not intended to identify key or critical elements of the disclosure, nor to delineate the scope or claims of particular embodiments of the disclosure. Its sole purpose is to present some concepts of the disclosure in a simplified form as a prelude to the more detailed description that is presented later.

[0004] One aspect of the disclosure describes a method that includes attaching a supply device to an inlet of one or more channels of a chamber component. The channel provides one or more gas flow paths between a first side of the chamber component including the inlet of the one or more channels and a second side of the chamber component including the outlet. The method further includes attaching an exhaust device to the outlet of the one or more channels. The method further includes performing a plurality of atomic layer deposition (ALD) cycles to deposit a corrosion resistant coating on an interior surface of the one or more channels of the chamber component. Performing the ALD cycle of the plurality of ALD cycles includes delivering a first reactant from the supply device through the one or more channels and adsorbing the first reactant on the interior surface of the one or more channels. Performing the ALD cycle further includes exhausting the first reactant from the one or more channels through the exhaust device. Performing the ALD cycle further includes delivering a second reactant from the supply device through the one or more channels and reacting the second reactant with the first reactant adsorbed on the interior surface of the one or more channels. Performing the ALD cycle further includes exhausting the second reactant.

[0005] In another aspect of the disclosure, a system includes a processing chamber component. The system also includes an ALD gas supply. The supply is attached to an inlet of one or more channels of the processing chamber component. The one or more channels provide one or more fluid flow paths between a first side of the chamber component that includes the inlet of the one or more channels and a second side of the processing chamber component that includes the outlet. The system also includes an exhaust. The exhaust is coupled to the outlet of the one or more channels. The processing chamber component, the supply, and the exhaust form an ALD flow path.

[0006] In another aspect of the disclosure, a processing chamber component includes a first side including an inlet. The component includes a second side including an outlet. Further, the component includes one or more channels between the inlet and the outlet. The channels provide one or more fluid flow paths between the first side and the second side. Further, the component includes a corrosion resistant coating deposited on one or more surfaces adjacent to the channels. [Brief description of the drawings]

[0007] The present disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings. [Figure 1] 1 illustrates a cross-sectional view of a processing chamber according to some embodiments. [Diagram 2] 1 illustrates an exemplary system for coating a surface of a processing chamber component, according to some embodiments. [Figure 3A] ~ [Figure 3B] 1A-1D show diagrams of exemplary chamber components and apparatus assemblies used to coat one or more surfaces of a component, according to some embodiments. [Figure 4A] ~ [Figure 4B] 1 illustrates a deposition process by ALD techniques for depositing a coating on a surface of an article, according to some embodiments. [Diagram 5] FIG. 2 is a flow diagram of a method for depositing a coating on an interior surface of a processing chamber component according to some embodiments. Detailed Description

[0008] Described herein are techniques related to producing resistant coatings (e.g., corrosion resistant coatings, halogen resistant coatings, etc.) on surfaces of components having complex internal geometries, including, for example, components having multiple internal channels that form fluid flow paths, components having multiple internal volumes, components having a large internal surface area (e.g., cross-sectional area of ​​the internal volume at the surface of the component) compared to the area where gas can access the internal volume, etc.

[0009] A manufacturing apparatus is used to produce products such as substrates (e.g., wafers, semiconductors). The manufacturing apparatus may include a processing chamber for isolating the substrate from the environment. The properties of the processed substrate must meet target values ​​to facilitate a particular function. Manufacturing / processing parameters are selected to produce a substrate that meets the target property values. Components of the processing apparatus may be configured to produce the target parameters during processing. For example, the substrate may be exposed to corrosive gases, such as during an etching processing operation. A gas delivery system may be configured to achieve uniform conditions across the surface of the substrate. For example, the gas delivery system may include components (e.g., showerheads, etc.) that distribute gas from multiple gas outlets (e.g., hundreds of outlets in some embodiments) to create uniform conditions in the processing chamber. As a further example, the temperature of the process may be controlled. Components of the processing chamber may be configured to transfer heat effectively, for example, by selecting materials of construction with high thermal conductivity, designing components such that interfaces between objects transfer heat effectively, etc.

[0010] Some processes may use conditions that may be harmful to some components. For example, high temperatures may degrade, melt, or damage certain materials, or corrosive gases or plasmas may degrade certain materials. In some systems, components may be coated to protect them from the harmful conditions. For example, aluminum degrades rapidly in the presence of halogen-containing gases. In some systems, aluminum components may be coated with a resistant material (e.g., corrosion resistant, halogen resistant, etc.) such as alumina (Al2O3). In some systems, this allows the aluminum to retain its valuable properties and still be resistant to the harmful process conditions.

[0011] Thin protective coatings can be applied using a variety of methods. Examples include physical vapor deposition, chemical vapor deposition, atomic layer deposition, electroplating, etc. The various methods have associated drawbacks. Physical vapor deposition techniques (sputtering, pulsed laser deposition, etc.) are often limited to line-of-sight procedures or are most effective in line-of-sight procedures and may be ineffective for coating interior volumes. Chemical vapor deposition can produce non-uniform coating depths on components with various portions with different availability to reactive gases. Atomic layer deposition (ALD) techniques typically flood the chamber containing the target components to promote complete deposition of the material by diffusion. Particularly complex components, e.g., components with large interior volumes compared to the size of the channels that allow access, or large interior surface areas to be coated compared to the cross-sectional area through which gases can flow to reach the target surface, may take a very long time to coat using traditional ALD techniques. Electroplating is similarly limited by the area of ​​the component surface that can effectively pass electrical current. Components with complex geometries may distribute charge non-uniformly, resulting in uneven coating or parts of the component not being coated.

[0012] In some systems, a single component may be made by joining multiple bodies together (e.g., brazing, diffusion bonding, etc.). A protective coating may be applied to the bodies prior to joining. In some embodiments, the protective coating may result in undesirable properties in the assembled components. For example, in some embodiments, the components may be utilized for temperature control of a process (e.g., process gases). A protective layer placed between the bodies of the components may impede heat transfer through the components and impede temperature control of the process. Additionally, the joining process may impede the performance of the protective coating. For example, brazing and diffusion bonding may involve high temperature processing to create a bond between the bodies of the components. At the temperatures used to create these bonds, the protective coating may be damaged or become mobile.

[0013] The disclosed systems and methods can address one or more of these deficiencies of conventional systems. In some embodiments, a protective coating is applied to a chamber component that includes a complex internal structure, where "complex internal structure" can be understood to mean a body having an internal structure that is not easily accessible to gas by diffusion, such as a body having a high ratio of internal volume to volume through which gas flux must access the internal volume.

[0014] In some embodiments, the component to be coated may be a component of a processing chamber. In some embodiments, the component to be coated may be a component of a gas delivery system of a processing chamber. In some embodiments, the component to be coated may include multiple internal fluid flow paths, e.g., numerous channels through which processing gases flow during processing. In some embodiments, the chamber component may include hundreds of gas flow paths. Surfaces adjacent to the fluid flow paths may be coated to protect the component, e.g., from corrosive gases.

[0015] According to embodiments of the present disclosure, a pressure differential can be created to direct a flow of coating gas for an ALD process through the fluid flow channels of a chamber component. In an ALD process, a single application of a coating precursor creates a single layer that occupies the available surface locations, depositing a uniform layer on the surface of the component. The precursor gas is then replaced with a second precursor gas, which combines with the first precursor to occupy the available surface locations, creating a single layer. In this manner, layers are continually built up to create a coating of a target thickness.

[0016] In some embodiments of the disclosure, a supply and an exhaust are provided. The supply and the exhaust are coupled to opposite sides of one or more fluid flow paths through the chamber component. A pressure differential can be created by utilizing a pump system coupled to the exhaust. The supply can provide one or more gases including ALD precursors. The pressure differential can drive the ALD precursors through the chamber component, for example, creating binding or adsorption between the ALD precursors and the target surface of the chamber component faster than diffusion. In some embodiments, creating a protective coating using ALD may require multiple cycles of precursor delivery and precursor exhaust. In some embodiments, thousands of cycles may be used to create a coating. Even in systems where diffusion of the ALD precursors to all surfaces can occur relatively quickly, for example, within minutes, it may take a very long time to create a coating of a target thickness. Increasing the rate at which the ALD precursors are delivered to the target surface and exhausted from the interior volume of the component can significantly increase throughput and reduce the cost of coating the component.

[0017] Aspects of the present disclosure provide technical advantages over conventional solutions. Aspects of the present disclosure allow for the coating of interior surfaces of components having complex internal structures (e.g., interior channels of an upper electrode heating / cooling stack of a chamber such as an etch chamber) by ALD techniques. ALD allows for the production of coatings of uniform thickness. Aspects of the present disclosure allow for components fabricated from multiple bodies to be coated after assembly of the components, thereby allowing the desired properties of the components to be maintained. Aspects of the present disclosure allow for components fabricated from multiple bodies to be coated after bonding of the bodies, thereby allowing the desired properties of the coating to be maintained.

[0018] One aspect of the disclosure describes a method that includes attaching a supply device to an inlet of one or more channels of a chamber component. The channel provides one or more gas flow paths between a first side of the chamber component including the inlet and a second side of the chamber component including an outlet of the one or more channels. Further, the method includes attaching an exhaust device to the outlet of the one or more channels. Further, the method includes performing a plurality of atomic layer deposition (ALD) cycles to deposit a corrosion resistant coating on an interior surface of the one or more channels of the chamber component. Performing an ALD cycle of the plurality of ALD cycles includes delivering a first reactant from the supply device through the one or more channels and causing the first reactant to adsorb on the interior surface of the one or more channels. Further, performing the ALD cycle includes exhausting the first reactant from the one or more channels through the exhaust device. Further, performing the ALD cycle includes delivering a second reactant from the supply device through the one or more channels and causing the second reactant to react with the first reactant adsorbed on the interior surface of the one or more channels. Further, performing the ALD cycle includes exhausting the second reactant.

[0019] In another aspect of the disclosure, a system includes a processing chamber component. The system also includes an ALD gas supply. The supply is attached to an inlet of one or more channels of the processing chamber component. The one or more channels provide one or more fluid flow paths between a first side of the chamber component including the inlet and a second side of the processing chamber component including an outlet of the one or more channels. The system also includes an exhaust. The exhaust is coupled to the outlet of the one or more channels. The processing chamber component, the supply, and the exhaust form an ALD flow path.

[0020] In another aspect of the disclosure, a processing chamber component includes a first side including an inlet. The component includes a second side including an outlet. Further, the component includes one or more channels between the inlet and the outlet. The channels provide one or more fluid flow paths between the first side and the second side. Further, the component includes a corrosion resistant coating deposited on one or more surfaces adjacent to the channels.

[0021] FIG. 1 illustrates a cross-sectional view of a processing chamber 100 (e.g., a semiconductor wafer fabrication chamber, etc.) according to some embodiments. The processing chamber 100 may be one or more of an etch chamber, a deposition chamber (including atomic layer deposition, chemical vapor deposition, physical vapor deposition, plasma enhanced versions thereof, etc.), an anneal chamber, etc. For example, the processing chamber 100 may be a plasma etcher, a plasma cleaner, etc. Examples of chamber components include a substrate support 104, a chuck (e.g., electrostatic chuck, vacuum chuck, etc.), a ring (e.g., process kit ring, etc.), chamber walls, a base, a gas delivery system 106 (including, for example, a gas panel 120, a cooling plate 140, a heating plate 142, a showerhead assembly 144, a gas inlet line 146, etc.), a liner, a liner kit, a shield, a plasma screen, a flow equalizer, a chamber viewport, a chamber lid, a nozzle, etc.

[0022] In some embodiments, the processing chamber 100 includes a chamber body 108 and a showerhead assembly 144 that enclose an interior volume 110. In some chambers, portions of the gas delivery system 106 (such as the showerhead assembly 144) may be replaced with a lid and nozzle. The chamber body 108 may be formed of aluminum, stainless steel, or other suitable material. Generally, the chamber body 108 includes a sidewall 112 and a bottom 114.

[0023] An exhaust port 116 may be formed in the chamber body 108 and couple the interior volume 110 to a pumping system 118. The pumping system 118 may include one or more pumps and valves used to evacuate and regulate the pressure in the interior volume 110 of the processing chamber 100. The pumping system 118 may include one or more gauges for monitoring the pressure.

[0024] Portions of the gas supply system 106 (e.g., showerhead assembly 144, cooling plate 140, heating plate 142, etc.) may be supported on the sidewalls 112 of the chamber body 108 or on top of the chamber body. Portions of the gas supply system 106 (or the lid, in some embodiments) may be opened to allow access to the interior volume 110 of the processing chamber 100 and may be closed to seal the processing chamber 100. A gas panel 120 may be coupled to the processing chamber 100 and may provide process or cleaning gases to the interior volume 110 via other components of the gas supply system 106 (or via a lid and nozzle assembly, etc.). As shown in FIG. 1, a seal is created between the chamber body 108 and the showerhead assembly 144, although in other embodiments, the seals that form the interior volume 110 may be created between different components (e.g., between the chamber body 108 and the cooling plate 140, between the chamber body 108 and the heating plate 142, etc.). The showerhead assembly 144 can include a number of gas supply holes, for example a number of inlet holes each coupled to an outlet hole, for directing gas from the gas panel 120 to the interior volume 110 .

[0025] In some embodiments, the gas panel 120 can have multiple gas outlets coupled to gas inlet lines 146 (e.g., a heater / cooler stack including a heating plate 142 and a cooling plate 140, etc.). The heating plate 142 and the cooling plate 140 can be bonded together by a highly thermally conductive adhesive, and in embodiments, both are constructed of a highly thermally conductive material, such as aluminum or an aluminum alloy. In some embodiments, the gas supply system 106 can include branched gas flow paths, e.g., the gas flow paths can branch in the cooling plate 140, the heating plate 142, the showerhead assembly 144, etc., to form more exit ports of the processing chamber 100 than the gas inlet lines 146. In one embodiment, the gas panel 120 can supply gas to multiple inlets (e.g., two inlets, three inlets, four inlets, etc.), which branch to supply gas to the interior volume 110 through multiple feed holes (e.g., hundreds of feed holes, etc.). The gas inlet lines can be coupled to inlets of one or more components of the gas supply system 106. Each inlet can be coupled to a region of feed holes (e.g., annular pattern, radial pattern, segmented pattern, etc.), can be coupled to all of the feed holes, or can be configured to provide a different gas (e.g., process gas, carrier gas, inert gas, etc.). Examples of process gases that can be used to process substrates in the process chamber 100 include halogen-containing gases such as C2F6, SF6, SiCl4, HBr, NF3, CF4, CHF3, F2, Cl2, CCl4, BCl3, SiF4, and other gases such as O2 and N2O. Examples of carrier gases include N2, He, Ar, and other gases that are inert to the process gases (e.g., non-reactive gases).

[0026] In some embodiments, components of the gas delivery system 106 (e.g., cooling plate 140, heating plate 142, etc.) can provide temperature control of one or more process gases. In some embodiments, the efficiency of the gas temperature control (e.g., energy efficiency, time efficiency, etc.) is affected by the thermal conductivity of the components of the gas delivery system 106. In some embodiments, the materials used to construct the components of the gas delivery system 106 are selected to exhibit high thermal conductivity, for example, aluminum can be selected.

[0027] In some embodiments, the process gas may include a corrosive gas, such as a halogen-containing gas. The corrosive gas may react with the components of the gas delivery system 106. The materials used to construct the components of the gas delivery system may be selected to be resistant to the process gas (e.g., stainless steel). In some embodiments, materials that exhibit high thermal conductivity (and / or other target properties such as density, conductivity, strength, etc.) may not exhibit high resistance to process gases such as halogen-containing gases (e.g., aluminum). In some embodiments, the material integrity and thermal conductivity of one or more components of the gas delivery system 106 may be maintained by selectively depositing a corrosion-resistant material (e.g., alumina). For example, alumina may be deposited on surfaces of the cooling plate 140 and / or heating plate 142 that are adjacent to or within the fluid flow path (e.g., inner surfaces of channels, etc.) to provide a protective coating that isolates the components from corrosive and / or reactive process gases. In some embodiments, deposition of a resistant coating material (e.g., alumina) may not be performed on surface areas of the components that do not contact the process gas. For example, one or more components of the gas supply system (e.g., cooling plate 140) may be constructed of multiple bodies joined together (e.g., by brazing, diffusion bonding, etc.) The interfaces between the bodies of the components may be left free of a resistive coating to maintain the thermal conductivity of the components.

[0028] In some embodiments, surfaces of components of the gas delivery system 106 can be coated with a resistant coating using atomic layer deposition (ALD) techniques. In a typical ALD system, various reactive materials (such as coating precursors) are sequentially injected and evacuated into a chamber containing the component to be coated. In some embodiments, such an approach may not be feasible, for example, for components with complex internal structures to which a coating is applied.

[0029] As an example, in some embodiments, the cooling plate 140 may include multiple gas inlets and multiple gas outlets. In some embodiments, the gas inlets are coupled to outlets via multiple channels through the cooling plate 140, the channels forming one or more fluid flow paths. In some embodiments, for example, when the cooling plate 140 supplies gas to a showerhead of a processing chamber, the fluid flow paths through the cooling plate may include a high degree of branching, turns, etc., e.g., each inlet may branch into hundreds of outlets. In some embodiments, flooding (e.g., by diffusion or outflow) into the interior volume of the cooling plate 140 may be very slow, e.g., when the ratio of the surface area forming the possible diffusion or outflow gas flow paths into the interior volume to the volume being filled (or the length of the channel being coated) is low. For example, in systems with linear features with an aspect ratio of about 25:1 or more, conventional ALD techniques may not be suitable. ALD may fail at low aspect ratios, e.g., when the features have more complex features (e.g., tortuous flow paths). Conventional ALD techniques may not be able to accumulate sufficient concentrations of species (e.g., coating precursors) to form a coating during typical processing times (e.g., seconds to minutes). In some embodiments, ALD coating may involve repeating the flooding and evacuation process many times, e.g., thousands of times, to accumulate a coating of a target thickness. Systems and components where diffusion is slow to reach the target area may take a very long time to effectively coat. In some embodiments, a pressure differential across the fluid flow path to be coated can be utilized to increase the rate at which precursor gases, process gases, purge gases, etc. are placed in or removed from the interior volume of the chamber component compared to the rate of diffusion. Systems and methods for coating components having complex interior volumes are further described in conjunction with FIGS. 2-5.

[0030] The substrate support 104 is disposed within the interior volume 110 of the processing chamber 100 below the showerhead assembly 144. In some embodiments, the substrate support 104 includes a susceptor 122 and a shaft 124. The substrate support 104 supports the substrate 102 during processing. In some embodiments, one or more heaters 126 and reflectors 128 are also disposed within the processing chamber 100.

[0031] The substrate support 104 may include electronics that provide power and control to electrodes disposed within the substrate support 104. The substrate support 104 shown in FIG. 1 includes an electrostatic chuck assembly, although substrate supports including other components are possible and within the scope of this disclosure. The substrate support 104 may include one or more clamping electrodes (not shown). The clamping electrodes may be controlled by a chucking power supply 130. The chucking power supply 130 may include a separate output for each clamping electrode, allowing the clamping electrodes to be individually controlled. In FIG. 1, only one output of the chucking power supply 130 (and other similarly located components) is shown for clarity.

[0032] The substrate support 104 may include one or more heating elements 136 disposed within the support (e.g., the substrate support 104 may include an electrostatic chuck heater assembly). The embedded heating elements may be controlled by a heater power supply 132. The heater power supply 132 may have many of the same features as the chucking power supply 130. Additionally, the substrate support 104 may include one or more radio frequency (RF) elements controlled by an RF power generator 134. The RF power generator 134 and the RF elements may have some features in common with the chucking and heating system of the substrate support 104.

[0033] FIG. 2 illustrates an exemplary system 200 for coating surfaces of processing chamber components, according to some embodiments. The system 200 includes a gas panel 202, an outer chamber 204, and an inner chamber 206. The gas panel 202 is coupled to the inner chamber 206 and / or the outer chamber 204 via lines 208. The lines 208 can be connected to a gas manifold 210. The gas manifold 210 can include lines, valves, branches, containers, gauges, etc. configured to transport, mix, supply, monitor, etc., gases to the inner chamber 206 and / or the outer chamber 204. In some embodiments, the gas manifold 210 can be located inside the outer chamber 204, inside a portion of the outer chamber 204, outside the outer chamber 204, etc. The gas manifold 210 can be configured to supply a gas mixture to multiple outlets or supply separate gas mixtures to separate outlets. In some embodiments, the gas panel 202 can be coupled to the outer chamber 204 by lines 208 (e.g., to supply an inert gas, a purge gas). In some embodiments, gas may be supplied to the outer chamber 204 through a gas manifold 210 .

[0034] The gas manifold 210 supplies gas to the inner line 212. The inner line 212 is coupled to one or more inlets 214 of the inner chamber 206. In some embodiments, the inner chamber 206 includes the process chamber component to be coated, e.g., the inner chamber 206 internal volume is formed (in part) by the process chamber component to be coated. In some embodiments, the inner chamber 206 can include one or more devices configured to isolate the one or more chamber components to be coated and the internal volume of the inner chamber 206 (e.g., as shown in FIG. 2, the stacked cylinders and the bottom plate of the inner chamber 206 can include one or more devices configured to isolate the one or more chamber components to be coated and the internal volume of the inner chamber 206 from the internal volume of the outer chamber 204). In some embodiments, one or more seals (e.g., O-ring seals, gravity seals, etc.) are created between the components of the inner chamber 206 to separate the volume in the inner chamber 206 from the volume in the outer chamber 204.

[0035] The inner chamber 206 can be coupled to an inner chamber exhaust system 216. The inner chamber exhaust system can be coupled to an inner chamber exhaust pump system 218. The pump system 218 can include one or more pumps, valves, lines, gauges, etc. configured to exhaust gases from the inner chamber 206. Similarly, the outer chamber 204 can be coupled to an outer chamber exhaust system 220 and / or an outer chamber pump system 222. The outer chamber exhaust system 220 and / or the outer chamber pump system 222 can share features with the inner chamber exhaust system 216 and / or the inner chamber pump system 218. In some embodiments, the inner chamber and the outer chamber systems can share one or more components, such as pumps, lines, valves, containers, etc.

[0036] The system 200 can be used to coat one or more surfaces of one or more processing chamber components with a resistant coating (e.g., a halogen-resistant coating, etc.) using ALD. The system 200 can supply gas (e.g., coating precursors in a carrier gas) to the surface to be coated via a gas manifold 210, line 212, etc. The system 200 can exhaust the supply gas from a volume proximate to the surface to be coated via an inner chamber exhaust system 216. Another process gas can then be introduced into the inner chamber 206. Repeated flow of one or more process gases forms a layer on the exposed surfaces (e.g., inner surfaces, inner channels, fluid flow paths, etc.). The coating process can be repeated until a target thickness is reached. In some embodiments, a gas (e.g., an inert gas) can be supplied to the outer chamber 204 by the gas panel 202. In some embodiments, the pressure of the gas in the outer chamber 204 can be controlled to reduce the effects of an imperfect seal between the inner chamber 206 and the outer chamber 204. For example, the outer chamber 204 may be maintained at a higher pressure than the inner chamber 206 to reduce outflow of process gases (e.g., reactive gases, coating precursors, etc.) from the inner chamber 206 to the outer chamber 204. In some embodiments, the pressure of the ALD gases in the inner chamber 206 is maintained between 200 mTorr and 20 Torr, between 1 Torr and 15 Torr, about 10 Torr, etc. In some embodiments, the outer chamber 204 may be maintained at a higher pressure than the inner chamber 206, such as about ½ Torr higher, about 1 Torr higher, about 5 Torr higher, etc.

[0037] In some embodiments, the outer chamber 204 can include additional features, such as a heating element 224. The heating element 224 can be used to control the temperature, gas supply, etc. of the inner chamber 206 during the coating procedure. In some embodiments, ALD proceeds faster (e.g., faster reaction rates) at higher temperatures (e.g., about 300° C.). In some embodiments, one or more components of the system 200 (e.g., the processing chamber components to be coated) can include a material that is sensitive to heat that is transferred to the ALD coating. For example, some aluminum alloys may degrade over time at high temperatures. The heating element 224 can be used to provide a temperature (e.g., about 250° C. for aluminum) that is transferred to the material of the inner chamber 206.

[0038] 3A-3B show diagrams of exemplary chamber components and apparatus assemblies used to coat one or more surfaces of components, according to some embodiments. FIG. 3A shows a system 300A for coating the inner surfaces of a cooling plate 302 and a heating plate 304 (e.g., components of the gas delivery system 106 of FIG. 1), according to some embodiments. The system 300A includes a gas processing system 306 (e.g., gas manifold 210 of FIG. 2), a line 308, and an inlet 310 that interfaces with the line 308. In some embodiments, the inlet 310 is configured to supply process gases to the chamber component (e.g., the cooling plate 302 shown in FIG. 3, or other components such as a gas plenum, showerhead, etc.) when the chamber component is used to process a substrate. The line 308 can be configured to interface with an existing inlet 310. In some embodiments, a different configuration (plate, chamber, etc.) for supplying ALD gases to the assembly can be used.

[0039] Additionally, the system 300A includes a cooling plate 302, a heating plate 304, and a drainage plate 312 connected to an exhaust system 314. The components of the system 300A (e.g., the cooling plate 302, the heating plate 304, the drainage plate 312) can include fluid flow paths 316. Additionally, the system 300A can include one or more joints 318 (e.g., O-rings, gaskets, toric seals, etc.) that can isolate volumes within the assembly from the surrounding environment (e.g., isolating the inner chamber 206 from the outer chamber 204, as shown in FIG. 2). As shown in FIG. 3A, the two inlets 310 branch into multiple channels in the cooling plate 302, interface with channels 316 in the heating plate 304, and connect to the further branching channels 316. The channels in the heating plate 304 interface with the channels 316 in the drainage plate 312 and direct the flow of fluid to the exhaust system 314. There are many variations of this system. For example, the inlet plate can be configured to interface with the inlet of the component being coated (e.g., showerhead, etc.). Bifurcations may occur in different components or to different degrees. Although the cooling plate 302 includes inlets that are divided into a tree of channels directed to the output region, other configurations such as connected channels, channels that are interspersed rather than separated, etc. are possible and within the scope of this disclosure.

[0040] In some embodiments, the gas processing system 306 can supply the coating assembly with gases used to generate a resistant coating on one or more surfaces of one or more chamber components included in the system 300A. The exhaust system 314 can include one or more pumps that serve to exhaust a portion of the system 300A (e.g., channel 316, etc.), thereby allowing the coating gas (e.g., gas containing coating precursors, etc.) from the gas processing system 306 to flow throughout the area of ​​the system to be coated (e.g., walls of the channel 316, etc.). Systems with complex internal structures (e.g., branched internal volumes, etc.) can also be rapidly filled with coating gas in this manner (e.g., evacuating a fluid flow path and rapidly filling with coating gas, etc.). Repeated cycles of supplying gas containing one or more coating precursors and exhausting the system (e.g., channel 316, etc.) can grow a corrosion resistant coating. The number of repetitions can be selected to achieve a target coating thickness.

[0041] In some embodiments, gas flow rates, reaction rates, deposition rates, etc. in system 300A can be manipulated by controlling gas processing system 306 and / or exhaust system 314. In some embodiments, temperature control can be provided (e.g., by an external chamber, by utilizing the capabilities of a component of the deposition assembly such as cooling plate 302, by integrating temperature control into exhaust plate 312, e.g., via a heater, etc.).

[0042] 3B illustrates an alternative assembly design 300B for coating one or more surfaces of one or more chamber components, according to some embodiments. The assembly 300B includes a chamber component stack 320. The chamber component stack 320 can include any chamber component or multiple chamber components to be coated with a resistant coating (e.g., a halogen resistant coating, a corrosion resistant coating, etc.). The chamber component stack 320 can include components of a gas distribution system (e.g., a cooling plate, a heating plate, a gas plenum, a showerhead, etc.). The chamber component stack 320 can include an inlet 322 on a first side coupled to a channel 326 in the chamber component stack 320. Further, the channel 326 can be coupled to an outlet on a second side of the chamber component stack 320.

[0043] Additionally, the assembly 300B includes an exhaust device 328. In some embodiments, a portion of the exterior surface of the chamber component is provided with a resistant coating. For example, some of the exterior surfaces of the chamber components may come into contact with process gases during semiconductor processing operations, and these areas may be subject to deposition of a coating in addition to the internal channels. The exhaust device 328 illustrates one way to achieve this. The exhaust device 328 may be configured to direct the gas flow from the outlet of the chamber component stack 320 along the exterior surface of the chamber stack 320 before directing it to the exhaust system 332. The exhaust device 328 may form a seal with the chamber component stack 320 or other parts of the coating system (e.g., the inlet plate, if present, etc.), for example, via an O-ring 324. In some embodiments, only a portion of the exterior surface of the chamber component stack 320 is provided with a resistant coating. In some embodiments, a seal (e.g., the seal forming the inner chamber 206 of FIG. 2 ) can be formed along different portions of the chamber component stack 320, for example, at a location 335 on the outer surface 334 of the chamber component stack 320 (e.g., if a corrosion resistant coating is applied to the outer surface 334 below the location 335 but not deposited on the outer surface 334 above the location 335, the eductor 328 can be configured to form a seal with the chamber component stack 320 at the location 335). In some embodiments, a surface of the chamber component stack 320 adjacent to an outlet of the chamber component stack 320 (e.g., a bottom surface) may be coated and the sides may not be coated. The eductor 328 can be designed to create a seal with the chamber component stack 320 such that the bottom of the chamber component stack 320 is exposed to the ALD gas flow but the sides are not, masking can be used to isolate the sides of the chamber component stack 320 from the ALD gas flow, etc.

[0044] Additionally, in some embodiments, the assembly 300B can include one or more masks 330. For example, some of the exterior surfaces of the chamber component stack 320 may not be expected to come into contact with process gases while installed in a processing chamber. For example, the chamber component stack 320 may be installed coupled to a showerhead, and the bottom surface of the chamber component stack 320 may not come into contact with corrosive gases. The masks 330 can be used to prevent coatings from depositing on some areas of the surface of the chamber component stack 320. Masking can also be used in other areas, such as along the exterior surface 334 of the chamber component stack 320.

[0045] Assembly 300B and system 300A are described as incorporating ALD gas flow by supplying gases to the chamber components through gas flow inlets and providing a pressure differential through an exhaust system connected to the chamber component outlets. Reversing the operation, e.g., supplying gases for ALD through a process gas outlet and creating a vacuum through an exhaust system connected to a process gas inlet, is also contemplated and within the scope of this disclosure.

[0046] 4A-B show deposition processes 400A-B by an ALD technique for growing or depositing a resistant coating on a surface 205 of an article 210, according to some embodiments. Various types of ALD processes exist, and the particular type used can be selected based on several factors, such as the surface to be coated, the coating material, and the chemical interactions between the surface and the coating material. The general principle of the various ALD processes involves growing a thin film layer by repeatedly exposing the surface to be coated to pulses of gaseous chemical precursors that chemically react with the surface, one at a time, in a self-limiting manner.

[0047] FIG. 4A illustrates an article 410 having a first surface 405. The article 410 may represent various process chamber components (e.g., semiconductor process chamber components, etc.), particularly components with complex internal structures including gas distribution system components, cooling plates, heating plates, showerheads, etc. The article 410 may be constructed from metals (e.g., aluminum, stainless steel, etc.), polymers, silicon, or other suitable materials. In one embodiment, the article 410 includes numerous gas delivery components, such as cooling plates, heating plates, gas plenums, etc. In some embodiments, aluminum may be used to construct these components, producing components with high thermal conductivity. However, aluminum degrades rapidly in the presence of halogenated gases (e.g., fluorine, chlorine, etc.), resulting in reduced performance, frequent maintenance, contamination of the process gas flow, and other issues.

[0048] In the case of ALD, the adsorption of a precursor to a surface or the reaction of an adsorbed precursor with a reactant may be referred to as a "half-reaction." During the first half-reaction, the precursor is provided to a volume close to the surface 405 of the article 410 (e.g., an interior surface close to a fluid flow path) for a time sufficient for the precursor to fully adsorb to the surface. The adsorption is self-limiting because the precursor adsorbs to a limited number of available sites on the surface and forms a uniform continuous adsorbed layer on the surface. Sites on which a precursor has already been adsorbed become unavailable for further adsorption by the same precursor unless and / or until the adsorbed sites undergo a treatment that forms new available sites on a uniform continuous coating. Exemplary treatments may be plasma treatments, treatments by exposing the uniform continuous adsorbed layer to radicals, or the introduction of a different precursor that can react with the latest uniform continuous layer adsorbed on the surface.

[0049] In some embodiments, two or more precursors are injected together and adsorbed onto the surface of the article. Excess precursor is evacuated until a reactant (such as an oxygen-containing reactant) is injected to react with the adsorbate and form a solid single-phase or multi-phase layer (YAG, alumina, etc.). This new layer is ready to adsorb a precursor in the next cycle.

[0050] The article 410 can be introduced to the first precursor 460 for a first period of time until the surface 405 of the article 410 is fully adsorbed by the first precursor 460 to form the adsorbed layer 414. The article 410 is then introduced to the first reactant 465, which reacts with the adsorbed layer 414 to grow the solid layer 416 (e.g., the layer 416 can be fully grown or deposited, where the terms growing and depositing are used interchangeably herein). The first precursor 460 can be a metal precursor that can be used for high purity metal oxides. For example, the first precursor 460 can be an aluminum precursor, such as trimethylaluminum. The first reactant 465 can include oxygen, e.g., oxygen gas, water vapor, ozone, oxygen radicals, etc., when the target coating layer material is an oxide. Thus, the first precursor 460 and the first reactant 465 (also referred to as precursors) can be used to form, for example, aluminum oxide. Thus, ALD can be used to form the layer 416. Layer 416 may be a halogen-resistant coating or may be one layer of a multi-layer halogen-resistant coating.

[0051] Layer 416 can include other materials that can be deposited by ALD. For example, alternating metal oxides can be deposited by providing a gas containing a metal source and a gas containing an oxygen source. Materials that can be deposited by ALD include rare earth metal oxides, such as yttria (Y2O3), erbium oxide (Er2O3), zirconium oxide (ZrO2), and tantalum oxide (Ta2O3). Layer 416 can include multiple materials, such as aluminum oxide and one or more rare earth oxides. Multiple materials can be co-deposited or applied in alternating layers. In some embodiments, an oxide composite containing multiple metals can be deposited, for example, the deposited material can be Y. x Zr Y O Z , Y A Zr x Al Y O Z , Y x Al Y O Z , Y x Er Y O Z In some embodiments, the ALD deposited material may be YAG (YAlO 12 ), EAG(Er3Al5O 12 ), or YAM (YAlO).

[0052] In an example where layer 416 is a high purity alumina (HP-Al2O3) layer, the article 410 (e.g., a component of a gas delivery system having a complex internal structure to be coated, etc.) is introduced to a first precursor 460 (e.g., trimethylaluminum (TMA)) for a first period of time until all reactive sites on the surface 405 of the article 410 are consumed. The remaining first precursor 460 is flushed away, e.g., via exhaust system 216 of FIG. 2, and then a first reactant 465, H2O, is injected into the volume proximate to the surface 405 to begin a second half-cycle. After the H2O molecules react with the Al-containing adsorbed layer produced by the first half-reaction, the HP-Al2O3 layer 416 is formed.

[0053] Layer 416 may be uniform, continuous, and conformal. Layer 416 may be non-porous (e.g., zero porosity) or, in embodiments, near zero porosity (e.g., 0% to 0.01%). Layer 416 may be less than one atomic layer to a few atoms thick in some embodiments after one ALD deposition cycle. Some organometallic precursor molecules are large. After reacting with reactant 465, the large organic ligands are gone, leaving much smaller metal atoms. One complete ALD cycle (e.g., including introduction of precursor 460 followed by introduction of reactant 465) may result in less than one atomic layer. For example, the growth rate of an Al2O3 monolayer grown with TMA and H2O is typically about 0.9 Å / cycle to about 1.3 Å / cycle, while the Al2O3 lattice constant is A=4.7 Å and c=13 Å (for trigonal structure).

[0054] To deposit a thicker layer 417, multiple complete ALD deposition cycles can be performed. Each complete cycle (e.g., including introduction of precursor 460, flushing, introduction of reactant 465, and flushing again) adds a fraction of an atom to a few atoms in thickness. As shown, up to n complete cycles can be performed to grow layer 417, where n is an integer value greater than 1. In some embodiments, layer 417 can have a thickness of about 5 nm to about 5 μm. In some embodiments, layer 417 can have a thickness of about 100 nm to about 1 μm. In some embodiments, layer 417 can have a thickness of about 200 nm to about 800 nm. In some embodiments, layer 417 can have a thickness of about 300 nm to about 600 nm. In some embodiments, layer 417 can have a thickness of about 400 nm to about 500 nm, or any permutation, combination, or range included of the above thicknesses.

[0055] Layer 417 can provide robust halogen gas resistance and mechanical properties. Layer 417 can protect article 410 (e.g., a process chamber component, etc.) from corrosion, increase dielectric strength, and prevent cracking. Interior surfaces of high aspect ratio features, such as gas delivery systems, components with large interior volumes, components with complex internal structures, and components with a large ratio of interior surface area to surface area through which gas can pass and reach the interior surface area, can be coated using ALD techniques in an ALD system such as that shown in FIG.

[0056] In an embodiment, layer 417 may be HP-Al2O3 having a purity of about 89.99% to about 99.99%. High purity Al2O3 is significantly more resistant to halogen-containing gases than aluminum and has other advantageous properties (e.g., workability, density, thermal conductivity, etc.) for use in gas delivery systems. Additionally, alumina has good adhesion to aluminum-based components due to the common aluminum element.

[0057] FIG. 4B shows a deposition process 400B including the deposition layer 417 described with reference to FIG. 4A. Additionally, the deposition process 400B of FIG. 2B includes the deposition of an additional layer 421 to form a multi-layer resistant coating (e.g., corrosion-resistant, plasma-resistant, halogen-resistant, etc.). Thus, after the layer 417 is completed, the article 410 can be introduced to an additional one or more precursors 470 for a second duration until the layer 417 fully adsorbs the one or more additional precursors 470 and forms an adsorbed layer 418. The article 410 can then be introduced to a reactant 475 and reacted with the adsorbed layer 418 to grow a solid layer 420, also referred to as a second layer 420. The second layer 420 can be deposited multiple times (e.g., m times) to produce a second layer 421 of a target thickness, similar to the layer shown in FIG. 4A. Different thickness ratios between layers 417 and 421 may result in different properties, such as different corrosion resistance, heat resistance, mechanical strength, and resistance to damage due to thermal expansion.

[0058] 5 is a flow diagram of a method 500 for depositing a coating on an interior surface of a processing chamber component, according to some embodiments. In block 502, a supply device is attached to an inlet of one or more channels of a chamber component, such as a processing chamber component, a gas supply system component, etc. The one or more channels provide one or more fluid flow paths (e.g., gas flow paths, etc.) between a first side of the chamber component and a second side of the chamber component. The first side of the chamber component comprises an inlet, and the second side of the chamber component comprises one or more outlets of the one or more channels.

[0059] In block 504, an evacuation device is attached to the outlet of one or more channels. In some embodiments, the evacuation device can be designed to provide a flow path for the fluid to flow from the outlet towards the evacuation system, e.g., away from the second surface of the chamber component. For example, the evacuation device can include a channel corresponding to the channel of the chamber component. In some embodiments, the evacuation device can be configured to direct gas from the channel of the chamber component to at least a portion of an outer surface of the chamber component, e.g., the second surface, the third surface, etc. In some embodiments, alternatively or additionally, the supply device can be configured to supply a flow of the fluid to at least a portion of the outer surface of the chamber component.

[0060] In block 506, the supplies, exhausts, and chamber components can optionally be disposed in a vacuum chamber, such as outer chamber 204 of FIG. 4. In some embodiments, the vacuum chamber can be used to contain ALD gases (e.g., gases including ALD coating precursors). In some embodiments, the vacuum chamber can contain an inert gas. In some embodiments, the vacuum chamber can mitigate leakage of ALD gases from volumes proximate the surface to be coated (e.g., internal channels of a chamber component, inner chamber 206 of FIG. 2, etc.). In some embodiments, the vacuum chamber can contain an inert gas at a pressure somewhat higher than the ALD gases to mitigate leakage from the inner chamber to the outer chamber.

[0061] At block 508, multiple atomic layer deposition cycles are performed. The ALD cycles deposit a corrosion resistant (e.g., halogen-containing gas resistant, etc.) coating on an interior surface of one or more channels of the chamber component. In some embodiments, the corrosion resistant coating is or includes alumina. The ALD deposition of the coating can be divided into sub-operations described at blocks 510 through 516.

[0062] At block 510, a first reactant is delivered from a delivery device through one or more channels. Delivery of the first reactant causes the first reactant to adsorb onto the interior surfaces of the one or more channels. The first reactant may be a precursor of the target coating material. For example, the first reactant may be an alumina precursor. In some embodiments, the first reactant may include an oxygen source. In some embodiments, the first reactant may include an aluminum source. Coatings of materials other than aluminum may include different and / or additional reactants. For example, an erbium oxide coating may include an erbium source, a YAG coating may include an yttrium source, etc.

[0063] In block 512, the first reactant is exhausted from one or more channels. The first reactant is exhausted through an exhaust. The exhaust is configured to interface with the outlets of the channels and can, for example, remove gas from an interior volume of the chamber component. The exhaust can be configured to draw gas through a region proximate to an exterior surface of the component, such as through a second side, a third side, etc. In some embodiments, the third side is a sidewall connecting the first side and the second side. In some embodiments, the exhaust can be configured to allow contact of the ALD gas with the interior channel, contact of the ALD gas with both the interior channel and at least a portion of the second side, contact of the ALD gas with both the interior channel and at least a portion of the third side, contact of the ALD gas with at least a portion of both the second and third sides, etc. In some embodiments, a corrosion resistant coating can be applied to the walls of the channels and to an exterior surface of the chamber component, such as a portion of the second and / or third side.

[0064] In block 514, a second reactant is fed from a feeder through one or more channels, where the second reactant reacts with the first reactant adsorbed on the inner surface of the one or more channels. In some embodiments, the second reactant can also react with the first reactant adsorbed on the outer surface of the one or more channels. In block 516, the second reactant is exhausted through an exhaust. The operations of blocks 514 and 516 can share features with the operations of blocks 510 and 512.

[0065] At block 518, a corrosion-resistant coating is optionally deposited on an exterior surface of the second side of the chamber component by multiple ALD cycles. The corrosion-resistant coating is not deposited on at least a portion of an exterior surface of a third side of the chamber component. The third side is a sidewall connecting the first and second sides. As described in connection with blocks 510 and 512, the supply and / or exhaust can be configured to supply ALD gases to a target portion of the chamber component, such as an interior channel, an exterior side, or a portion thereof.

[0066] At block 520, it is determined whether the coating deposited in the ALD process of block 508 reaches a target thickness. The thickness determination may be based on measuring the thickness of the coating, tracking the number of times the cycle of block 508 has been performed, etc. If the target thickness has not been reached, the operation of block 508 may be repeated. Each operation of block 508 may be referred to as an ALD cycle. In some embodiments, the target coating thickness is between 1 nm and 5 μm. In some embodiments, a large number of ALD cycles, e.g., thousands of ALD cycles, may be performed to achieve a coating of the target thickness. Performing a large number of ALD cycles may be costly in terms of time, energy consumed (e.g., energy to maintain the ALD deposition temperature), materials consumed, etc. Diffusion of ALD gases into complex internal geometries, e.g., internal channels of components of the gas delivery system, may be very time consuming. Using a pumping system to selectively drive the flow of ALD gases in the area where the coating is to be deposited may alleviate long deposition times by directly delivering ALD gases to the surfaces to be coated and directly exhausting volumes close to those surfaces. Once the target thickness is reached, the flow of method 500 ends.

[0067] The above description is intended to be illustrative, and not limiting. Although the present disclosure has been described with reference to certain illustrative examples and embodiments, it is understood that the disclosure is not limited to the described examples and embodiments. The scope of the present disclosure should be determined with reference to the following claims, along with the full scope of equivalents to which such claims are entitled.

Claims

1. mounting a supply device to an inlet of one or more channels of a chamber component, the one or more channels providing one or more gas flow paths between a first side of the chamber component including the inlet and a second side of the chamber component including the outlet of the one or more channels; attaching an ejector to an outlet of one or more channels; performing a plurality of atomic layer deposition (ALD) cycles to deposit a corrosion resistant coating on an interior surface of one or more channels of the chamber component, the performing of the plurality of ALD cycles comprising: delivering a first reactant from a supply device through the one or more channels such that the first reactant is adsorbed onto an interior surface of the one or more channels; exhausting the first reactant from the one or more channels via an exhaust device; delivering a second reactant from a supply device through the one or more channels to react with the first reactant adsorbed on the interior surface of the one or more channels; The method includes a depositing step that includes evacuating the second reactant.

2. 10. The method of claim 1, wherein the number of ALD cycles of the multiple ALD cycles is selected such that the corrosion resistant coating has a thickness of 5 nm to 1 μm.

3. The method of claim 1 , wherein the chamber component comprises a device for delivering process gas to the process chamber.

4. The method of claim 1 , wherein the corrosion resistant coating comprises alumina.

5. 10. The method of claim 1, wherein the first reactant comprises a first of an oxygen source or an aluminum source and the second reactant comprises a second of an oxygen source or an aluminum source.

6. The method of claim 1 , further comprising the step of disposing the supply system, the exhaust system, and the chamber components in a vacuum chamber.

7. 10. The method of claim 1, wherein the chamber component comprises a first body including a first mating surface and a second body including a second mating surface, the first mating surface being mated to the second mating surface, and the corrosion resistant coating is not deposited on the first mating surface or the second mating surface.

8. 10. The method of claim 1, comprising depositing a corrosion resistant coating on an exterior surface of a second side of the chamber component via multiple ALD cycles, the corrosion resistant coating not being deposited on at least a portion of an exterior surface of a third side of the chamber component, the third side being a sidewall connecting the first side and the second side.

9. a processing chamber component; an atomic layer deposition (ALD) gas supply apparatus attached to an inlet of one or more channels of a processing chamber component, the supply apparatus providing one or more fluid flow paths between a first side of the chamber component including the inlet of the one or more channels and a second side of the processing chamber component including the outlet of the one or more channels; A system comprising an exhaust system connected to the outlet of one or more channels, the process chamber components, the supply system, and the exhaust system forming an ALD gas flow path.

10. 10. The system of claim 9, wherein the exhaust comprises one or more exhaust channels coupled to the outlet, and the ALD gas flow path does not include a volume bounded by the second side.

11. 10. The system of claim 9, further comprising a seal between the eductor and the second side, the ALD gas flow path being defined at least in part by a surface of the eductor and the second side.

12. 10. The system of claim 9, further comprising a seal between the exhaust system and the processing chamber component, wherein at least a portion of the ALD gas flow path is formed by a surface of the exhaust system and at least a portion of a third side of the processing chamber component, the third side being a sidewall connecting the first side and the second side.

13. The system of claim 9 , wherein the processing chamber component includes a device for delivering processing gas to the processing chamber.

14. The system of claim 9 , further comprising a vacuum chamber, the process chamber components, the supply device, and the exhaust device being disposed within the vacuum chamber.

15. 10. The system of claim 9, further comprising a mask disposed on at least a portion of the second side, wherein at least a portion of the ALD gas flow path is defined by the mask and the exhaust.

16. 1. A processing chamber component comprising: a first side including an entrance; a second side including an outlet; one or more channels between the inlet and the outlet, the channels providing one or more fluid flow paths between the first side and the second side; A processing chamber component comprising a corrosion resistant coating deposited on one or more surfaces adjacent to the channel.

17. The component of claim 16 , wherein the corrosion resistant coating comprises alumina.

18. The component of claim 16 , further comprising a device for delivering process gas to a process chamber.

19. a first body including a first mating surface; 17. The component of claim 16, comprising a second body including a second faying surface, the first faying surface being bonded to the second faying surface, and the corrosion resistant coating is not deposited on the first faying surface or the second faying surface.

20. 17. The component of claim 16, comprising a corrosion resistant coating disposed on at least a portion of a surface of a second side and a corrosion resistant coating disposed on at least a portion of a surface of a third side of the component, the third side being a sidewall connecting the first and second sides.

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